TW201004526A - Fabricating process for circuit board - Google Patents

Abstract

A fabricating process for circuit board is provided. In the process, first, a substrate including an insulation layer, a first conductive layer and a second conductive layer is provided, and the insulation layer is disposed between the first conductive layer and the second conductive layer. Next, a barrier layer is formed over the first conductive layer. Next, at least one blind via stretched from the second conductive layer to the first conductive layer is formed, and the blind via exposes the first conductive layer locally. Next, a conductive blind via structure is formed in the blind via. When forming the conductive blind via structure, furthermore a metal layer is formed over the barrier layer. Then, the metal layer is removed. After removing the metal layer, the barrier is removed, and the first conductive layer and the second layer are patterned.

Description

201004526 Λ-vy / λ-'-μ.^τλ,.^Οο/π IX. Description of the Invention: [Technical Field] The present invention relates to a circuit board process, and more particularly to a circuit board & process of c〇nductive biind via structure. [Prior Art] The double side circuit board of the rain and the multi-layer circuit board generally have a conductive blind hole structure, and the conductive blind hole structure is used in the two types of circuit boards. The multilayer lines are electrically connected. FIG. 1A to FIG. 1E are diagrams illustrating a conventional circuit board process. Please refer to FIG. 1A, firstly, for a copper foil substrate (c〇pper ciad Laminate, CCL) 100, which comprises a two-layer copper foil u〇a, 11〇b, and a copper foil 110a' and copper. The foil 〇b, between the resin layers 12〇. Please refer to FIG. 1B, and then, laser drimng is performed to form a blind via B1. The blind via m extends from the copper foil u〇a to the copper foil 110b' and partially exposes the copper foil ii〇b. Referring to FIG. ic, next, via filling plating is performed to form a conductive blind via structure 13 in the blind via B1, wherein the electrically blind via structure 130 is connected to the copper 〇 〇 ' ' and the copper 羯 11 Xian, between. When the hole-fill plating is performed, the two electroplated copper layers 14〇a, 14〇b are simultaneously formed. The plated steel layer 140a is formed on the copper foil 11a' and the plated copper layer 14 is formed on the copper foil 110b'. Under the influence of the shape of the blind hole B1, after the hole filling power 201004526 /^uiwi.uOC/n is plated, the plated copper layer 140a has a groove FI, and the groove pi is located above the conductive blind hole structure 130. Referring to Figure 1C and Figure IP, the electroplated copper layers 140a, 140b are then removed using an etching process. After the electroplated copper layer 14a, 14% is removed, the surfaces of the copper foils 110a', 110b' are subject to etching by the etching solution, and thus the surfaces of the steel foils 110a', 110b' become rough. Referring to FIG. 1E, the copper foil 110a and the copper foil n〇b are patterned and formed to form a copper wiring layer; [10a and a copper wiring layer 110b.曰 Since the surfaces of the copper foils 110a, 110b' become rough after the electroplated copper layers 14a, 14b are removed, the surfaces of the copper wiring layers 11a, 11b are also roughened. That is to say, the flatness of the copper circuit layers 11a, u〇b is too low, so that the copper circuit layers 11a, u〇b are difficult to be fine line, thereby causing the circuit board wiring. The density is not easy to increase. SUMMARY OF THE INVENTION The present invention provides a circuit board process for maintaining the flatness of a circuit layer of a circuit board. The present invention provides a circuit board process that includes, firstly, providing a substrate. The substrate includes an insulating layer, a first conductive layer and a second conductive layer, wherein the insulating layer is disposed between the first conductive layer and the second conductive layer. A first barrier layer is then formed on the first conductive layer. Next, at least a blind via is formed which extends from the second conductive layer to the first conductive layer, and the blind via exposes the first conductive layer locally. Next, a conductive blind via is formed. 6 201004526 — vy I MW V · 1 *.ivj〇C/ri is structured in the blind via. When forming the conductive blind via structure, the method further comprises forming a second metal layer formed on the first barrier layer and forming a second metal layer on the second conductive layer. Next, the first metal layer is removed and the second metal layer is removed. After removing the first metal layer, the first barrier layer is removed. Thereafter, the first conductive layer and the second conductive layer are patterned. In an embodiment of the invention, the first metal layer and the second metal layer and the first barrier layer are removed by etching. In an embodiment of the invention, the above described method of forming a conductive blind via structure includes fill hole plating. In one embodiment of the invention, the method of forming a blind via includes a photoresist layer on the second conductive layer, wherein the photoresist layer has an opening of the localized conductive layer. Next, it is removed in the opening (10), and j is the second conductive layer to partially expose the opening to the insulating layer. Next, the laser light is removed from the portion of the insulating layer of the opening (10), and the photoresist is removed. In the embodiment of the present invention, the material of the photoresist layer is a positive photo-former. The above-mentioned circuit board process further includes a shape-protection layer on the first barrier layer, and a formation layer _ layer on the second mine guide Mu ^^ 弟弟一保濩 layer, and forming - the first The photoresist layer is on the first protective layer, and the second layer is on the second protective layer, wherein the second layer has an opening that partially exposes the second protective layer. In the embodiment, the method for forming the blind hole engraves a portion of the second protective layer and the portion of the 201004526 ^〇/zutwr.aoc/n second conductive layer in the opening. After the opening partially exposes the insulating layer, the first photoresist layer and the second photoresist layer are removed: a second beam of the beam is removed to remove a portion of the insulating layer located within the opening. In the consistent application of this example, when the squad is removed, the first protection layer is removed. When the 】:: metal layer is removed, the second protective layer is included. When the core is removed from the first metal layer, the first photoresist layer and the second photoresist are further included in the embodiment of the second layer, except for the second barrier layer. After removing the second metal layer on the layer, in one embodiment of the invention, the upper layer c exposes the insulating layer partially. Next, a conductive layer of a thousand L is used to make a portion of the insulating layer of the opening. The beam is removed to remove the electrically blind hole structure in the embodiment of the present invention, including the method of forming a photoresist layer on the second metal layer 22, and the green layer (four) is guided by a photoresist The layer is a mask layer. Then the resist layer and the remaining second metal layer / layer. Next, the photodiode is removed, and the method of removing the photoresist layer and the remaining first layer includes polishing the photoresist layer and the remaining second metal layer. 201004526 zo /zuiwi.aoc/n In one embodiment of the invention, the second barrier layer is removed by etching. When the first metal layer is removed, the first conductive layer can be protected by the first barrier layer. Therefore, after the removal of the first metal layer, the present invention can maintain the flatness of the first conductive layer, so that the wiring layer is easily thinned, thereby increasing the line density of the wiring board. In order to make the above features and advantages of the present invention more comprehensible, the following is a detailed description of the embodiments and the accompanying drawings. FIG. 2A to FIG. The process of the circuit board process of the embodiment. Referring to FIG. 2A, regarding the circuit board process of the embodiment, first, a substrate 200 is provided, which includes an insulating layer 21, a first conductive layer 22A, and a first The second conductive layer 220b, wherein the insulating layer 210 is disposed between the first conductive layer 220a' and the second conductive layer 22b. The germanium substrate 200 may be a copper foil substrate, and thus the first conductive layer 220a, The conductive layer 22〇b may be a double copper foil, that is, the first conductive layer 22 may be made of a material such as a second conductive layer 22Gb, and the insulating layer 210 may be made of a resin. ^ Please refer to FIG. 2B. Next, a barrier layer 230' is formed on the first conductive layer 22a, and a photoresist layer 240 is formed on the second conductive layer 220b. The material of the resistive early layer 23G is different from that of the first conductive layer 2 And the second conductive layer 2 bird and the material of the barrier layer 230 may be nickel. The method of forming the barrier layer 230 may be an electric forging method. The photoresist layer has a partial exposure of 201004526 --. vrv . , Joc/n second conductive layer 220b, an open DH1 positive photoresist. The material of 240 may be as shown in FIG. 2B and FIG. 2c, and a portion of the second conductor in the opening H1 may be removed by etching to remove the bit-exposed insulating layer 210. The electric layer 22〇b is such that the opening H1 is partially Since the barrier layer 230 of the 铋 丁 二 导电 导电 导电 雇 雇 , , , 因此 因此 因此 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 230 230 230 230 230 230 230 230 230 230 230 230 - Conductive layer 2 is applied, free from being _: two: layer] 3 〇 can be: the material of the guarantee = nickel, and the second conductive when: = hurt the second conductive layer, the _ liquid can be carved Referring to FIG. 2C and FIG. 2D, a portion of the insulating layer in the opening H1 is removed by the laser beam, that is, a portion of the insulating layer 210 exposed by the opening H1 is ablated by the laser beam. Forming - a blind via 62 extending from the second conductive layer 220b to the first conductive layer 220a, and the blind via B2 partially exposing the first conductive layer 220a. See Figure 2E Then, a conductive blind via structure 250 is formed in the blind via. The conductive blind via structure 250 is connected between the first conductive layer 220a and the first conductive layer 220b, and the method for forming the conductive blind via structure 25A may include Hole-fill plating. When the conductive blind via structure 250 is formed, a first metal layer 26 is formed on the barrier layer 230, and a second metal layer 26% is formed on the second conductive layer 22b. The effect of the shape of the blind hole B2, after the 201004526 zo//utwr.aoc/n hole-filling clock is completed, the second metal layer 2_ will have a groove F2, and the groove F2 is located in the conductive blind hole structure 25〇 Above. Referring to Figures 2E and 2F, the first metal layer 26A and the second metal layer 260b are removed, wherein the first metal layer 26a and the second metal layer 260b may be removed by etching. The material of the conductive mesh structure 250, the first metal layer 26〇a and the second metal layer 260b may be applied to the first conductive layer 2 and the second conductive layer 2, (the same, the conductive blind hole structure) The material of the first metal layer 260a and the second metal layer 260b may be copper. Therefore, the material of the barrier layer 23 is different from the conductive mesh structure 250, the first metal layer 260a and the second metal layer 260b. The material of the three. § When the first metal layer 26〇a is removed in an incisive manner, the barrier layer 230 can be used as an etching stop layer and protect the first conductive layer 220a from being shielded. In addition, the etching solution used to remove the first metal layer 260a and the second metal layer 26〇b may be an experimental residual solution. J See FIG. 2F and FIG. 2G, in the removal After the metal layer 26A and the second metal layer 260b, the barrier layer 23 is removed. The barrier layer mo can also be removed by etching. When the first metal layer 260a is removed, the first conductive layer 22 〇a, protected by the barrier layer 230. Therefore, after the barrier layer 23 is removed, compared to the prior art The first conductive layer 22〇a has a relatively flat surface. In other words, the barrier layer 230 can maintain the flatness of the first conductive layer 22〇a. Please refer to FIG. 2G and FIG. 2H′, and then pattern first. The conductive layer 22〇a, 11 201004526 ^o/^utwt.aoc/n and the second conductive layer 22Gb, so that the first conductive layer 22Ga, the second conductive layer 2 is formed to form a second circuit layer island. a lithography and etching process of a conductive layer 22〇a, and a second conductive layer 22〇fc>.

Based on the above, when the first metal layer 26A is removed, the barrier layer 2 can protect the first conductive layer 2 and maintain the first conductive layer 22 (^ flatness. Therefore, compared to the prior art For example, the first circuit layer 22 can be easily thinned, and the line density of the circuit board can be improved. Fig. 3A to Fig. 3H are diagrams showing the process of the circuit board process according to another embodiment of the present invention. Regarding the circuit board process of the present embodiment, first, the substrate 200 is provided. Thereafter, the barrier layer 230 is formed on the first conductive layer 22 of the substrate 200. For example, referring to FIG. 3, then, a first protective layer is formed. 31〇a is formed on the barrier layer 230' and a second protective layer 310b is formed on the second conductive layer 22. The first protective layer 310a and the second protective layer 310b may be made of the first conductive layer. 220a' and the second conductive layer 220b are the same, and the material of both the first protective layer 310a and the second protective layer 310b may be copper. Further, the method of forming the first protective layer 310a and the second protective layer 310b may be Electroplating method. Referring to FIG. 3C, a first photoresist layer 34 is formed. And on the first protective layer 310a, and forming a second photoresist layer 340b on the second protective layer 310b. The second photoresist layer 340b has an opening H2 partially exposing the second protective layer 310b, and the first The material of the photoresist layer 340a and the second photoresist layer 34〇b may be a negative photoresist. 12 201004526 ^o/zuiwi.aoc/n Please refer to FIG. 3C and FIG. 3D, and then, the etching is removed at the opening H2. A portion of the second protective layer 31% and a portion of the second conductive layer 22b partially expose the opening H2 to the insulating layer 210. Since the material of the second protective layer 2 310' may be the same as the second conductive layer 22〇b Therefore, the method of moving the second portion; the second protective layer 310b and the portion of the second conductive layer 22〇b may be performed in the same etching process.

Referring to Figures 3D and 3E, the first photoresist layer 34 is removed and the second photoresist layer 34B is removed. When the material of the first photoresist layer is 0 negative photoresist and the material of the barrier layer 230 is nickel, removing the first photoresist layer, 34, the stripper used may cause damage to the nickel. . However, since the first protective layer 31a is formed on the barrier layer 230, and the stripping liquid does not cause damage to the first protective layer 31A, when the first photoresist layer is removed, the first protection is performed. The layer 31A can protect the barrier layer 230 from the barrier layer 23 from the peeling liquid. The laser beam is used externally to remove a portion of the insulating layer 210 located within the opening H2 to form a blind hole B3. The blind via B3 extends from the second conductive layer 22 rib to the first conductive layer 22A, and the blind via B3 partially exposes the first conductive sound 220a'. Referring to FIG. 3F, a conductive blind via structure 35 is formed in the blind via 1 'where the conductive blind via structure 350 is connected between the first conductive layer 22 and the second conductive layer 220b. The forming of the conductive blind via structure 35 包括 includes fill-hole plating. When the conductive blind via structure 350 is formed, a first metal layer 36A is formed on the first protective layer 31A, and two second metal layers 360b are formed on the second protective layer 310b. A 201004526 zo/zutwi.aoc/n Referring to FIG. 3F and FIG. 3G, then, the first metal layer 36A, the second metal layer 360b, the first protective layer 310a, and the second protective layer 31A are removed, wherein The first metal layer 360a, the second metal layer 360b, the first protective layer 31A, and the first layer 31 Ob may be removed by a surname. The material of the first metal layer 360a and the second metal layer 360b may be the same as that of the first protective layer 310a and the second protective layer 310b, and thus the second metal layer 360a, the second metal layer 360b, and the first protective layer 31〇 a and second insurance

The protective layer 310b can be removed by using the same etching solution, and the etching solution can be an inferior engraving solution. The material of the barrier layer 230 is different from that of the first metal layer and the second metal layer 36Gb. Therefore, the barrier layer (10) can be used as an etching stop layer and protect the first etching agent. The liquid is eroded.

Referring to FIG. 3G and FIG. 3H, the barrier layer 230 is removed. The barrier layer 230 can also be removed by etching. Next, the first conductive layer 22a is patterned, and the second conductive layer is passed, :r/^t22Ga' to form the first wiring layer 22Ga, and the second conductive layer to form the second wiring layer. The method of patterning the second conductive layer 220b of the disk can be applied to the V-electrode. When the first layer of the metal layer is removed, the layer 2 layer is applied, which is relatively flat. Conductive to be easily thinned, and the circuit board & 'di brother's circuit layer can be improved, the degree can also be improved: freshly know the moon again - the circuit board process of the embodiment 14 201004526 δό /zutwi.uoc/n process Referring to FIG. 4A, regarding the circuit board process of the embodiment, the substrate 200 is first provided. Then, on the first conductive layer 22 of the substrate 2, a first barrier layer 430a is formed thereon, and on the substrate 2 Forming a second barrier layer 43〇b on the second conductive layer, wherein the second barrier layer 43% has an opening H3 exposing the second conductive layer 220b', and the opening H3 can be surfaced: lithography and engraving process Forming, the first barrier layer 4 and the second barrier layer (four) b: the material of the material is different from the first conductive layer 22A, and the second conductive layer 220b, and the first barrier 430a and The material of the second barrier layer 43 〇 b may be nickel. Further, the method for forming the barrier layer 430 a and the second barrier layer 43 〇 b Referring to FIG. 4A and FIG. 4B 'then', a portion of the second conductive layer 22b located in the opening H3 is removed by etching, so that the opening H3 partially smashes the insulating layer 210. The material of the barrier layer 43〇b is different from the second &= layer 220b, so that the second barrier layer 43〇b can serve as a mask for removing a portion of the second second layer 220b'. 4B and FIG. 4C, then, the laser beam is used to remove a portion of the insulating layer 21 in the opening H3, that is, through the laser beam, the portion of the insulating layer 210 exposed by the opening Η3 is burned. The blind vias 64 extend from the second conductive layer 220b' to the first conductive layer 220a, and the blind vias partially expose the first conductive layer 220a. Referring to FIG. 4D, a conductive blind via structure 45 is formed. In the blind via B4, the conductive blind via structure 450 is connected between the first conductive layer 22〇= and the second conductive layer 220b, and forms a conductive blind via structure 45〇. 15 201004526 功/zurwi.uoc/ n method: including hole filling plating. When the conductive blind hole structure 45 is formed, the = metal layer 46Ga is formed. The barrier layer 4 is applied, and a second metal layer 460b is formed on the second barrier layer 43A. # After forming the conductive blind via structure 45, a photoresist layer 44 can be formed on the second metal. The layer is 46%. The photoresist layer is located in the conductive blind hole junction ^ 450

The square layer and the photoresist layer 44 partially cover the second metal layer, as shown in Fig. 4D.

Referring to FIG. 4D and FIG. 4E, next, the photoresist layer 44 is used as a mask to remove a portion of the second metal | 46% to form the remaining second metal layer 460b' and partially expose the second barrier. The surface of the layer 43 ribs is illusory. When a portion of the second metal layer 46Gb is removed, the first gold 46〇a is simultaneously removed to completely expose the surface of the first barrier layer 43A. In addition, the first metal layer 46A and the second metal layer b may be removed in a cost-effective manner. The material of the structure 45G'-metal layer and the second metal layer: 60b can be applied to the first conductive layer 2 and the second conductive layer, and the conductive blind hole structure 450 and the metal layer 4 are And the second metal 曰 46 = the material of both can be copper. Therefore, the material of the first barrier layer 懦 and the first barrier layer 43% is different from that of the conductive blind via structure 450, the first metal layer 460a, and the second metal layer 46〇b. When the first metal layer strip and the second second layer 460b are removed in a residual manner, the first barrier layer a and the second barrier layer 22 can secretly terminate the layer and protect the first conductive layer 220a, and the second conductive layer 22Gb' are protected from being invaded by the liquid medicine. The etching solution used for the layer 460a and the second metal layer 46% of the private metal layer 46 can be alkaline 16 201004526 / ---------- 〇〇 / π money engraving. Referring to FIG. 4A and FIG. 4F, the photoresist layer 44 is removed to remove the remaining L^ layer paste. The method of removing the photoresist layer 44G and the remaining second metal layer 46A may be to polish the photoresist layer __ remaining second metal layer 460, so after removing the remaining second metal layer 46〇', conductive The end face 452 of the blind hole structure 450 is substantially aligned with the surface of the second barrier layer 4 bird. ,

Referring to FIG. 4F and FIG. 4G, then, the first barrier layer 43A & and the second barrier layer 43Gb are removed. The first barrier layer 43Ga and the second barrier layer side may also be removed by means of a money engraving. When the first metal layer 46A and the second metal layer rib are removed, the first conductive layer 220a' is protected by the first barrier layer 430a, and the second conductive layer 220b is forked to the first barrier layer 430b. protection. After the first barrier layer 430a and the second barrier layer 430b are removed, the surface of the first conductive layer 220a' and the second conductive layer 22b may become relatively flat compared to the prior art. In other words, the flatness of the first conductive layer 220a' and the second conductive layer 220b is maintained by the protection of the first barrier layer 430a and the second barrier layer 430b. Referring to FIG. 4G and FIG. 4H, after the first barrier layer 43A and the second barrier layer 430b are removed, the end surface 452 of the conductive via structure 450 protrudes from the surface of the conductive layer 220b'. Therefore, the partially conductive blind via structure 45A can be removed to loosen the end surface of the conductive blind via structure 450 substantially in line with the surface of the second conductive layer 220b' (as shown in FIG. 4H), and the removal portion The method of the conductive blind via structure 450 may be to polish the conductive blind via structure 45〇17 201004526 /^.uiwi.uoc/n, please refer to FIG. 4H and FIG. 41, and then to the second conductive layer 220b, so as to make the first guide The second conductive layer 220a' layer 220a, the second conductive layer 220b, forming the 22nd"' forming the first line patterned first conductive layer 22a, and the second line: the circuit layer 220b. In addition, use lithography and rice engraving process. The method of cladding 22〇b can be based on the above, when removing the first metal layer % C, the first conductive layer 220a, and the second conductive screen & and the second metal layer 460b 430a and the second barrier The double layer of layer 430b. The first conductive layer 220a is the same as the second conductive surface of the conventional conductive layer 220a. Thus, the first circuit layer 220b' is relatively flat to be easily thinned, and the line of the circuit board = the second circuit layer 220b can be described above, and the degree of removal of the first metal layer can also be improved. The barrier layer can protect at least one conductive layer of the substrate, the second conductive layer), to prevent the conductive layer from being invaded by the first conductive layer or the first layer and the second metal layer, 'When the first-gold or second picture is removed into a circuit layer (the first line layer of the gamma increases the line density of the circuit board. This makes the circuit layer easily thinned, with the spirit and the collar of the present invention ==== =, in the 不 ί 发明 发明 发明 发明 当 当 当 当 当 : : : : : : : : : 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 2A to 2H are views showing a flow of a circuit board process according to an embodiment of the present invention. Figs. 3A to 3H are flowcharts showing a circuit board process according to another embodiment of the present invention. Figs. 4A to 41 are diagrams showing still another embodiment of the present invention. Process of circuit board process of the embodiment. [Description of main component symbols] 100: copper foil substrate 110a, 110b: copper wiring layer 110a', 110b': copper foil 120: resin layer 130, 250, 350, 450: conductive blind hole Structure 140a, 140b: electroplated copper layer 200: substrate 210: insulating layer 220a: first wiring layer 220a : a first conductive layer 220b: a second wiring layer 220b': a second conductive layer 230: a barrier layer 240, 340, 440: a photoresist layer 19] oc / n 201004526 260a, 360a, 460a: a first metal layer 260b, 360b, 460b: second metal layer 310a: first protective layer 310b: second protective layer 340a: first photoresist layer 340b: second photoresist layer 430a: first barrier layer 430b: second barrier layer 432b: Surface 452, 452': end face 460': remaining second metal layer

Bl, B2, B3, B4: blind sub-L FI, F2: groove m, H2, H3: opening

20

Claims (1)

Auc/n 201004526 X. Patent application scope: 1. A circuit board process comprising: providing a substrate comprising an insulating layer, a first conductive layer and a second conductive layer, wherein the insulating layer is disposed in the first Between the conductive layer and the second conductive layer; forming a first barrier layer on the first conductive layer; forming at least one blind via extending from the second conductive layer to the first conductive layer The blind hole partially exposes the first conductive layer; I forming a conductive blind via structure in the blind via, and when forming the conductive blind via structure, further comprising forming a first metal layer formed on the first barrier layer And forming a second metal layer on the second conductive layer; removing the first metal layer; removing the second metal layer; removing the first barrier after removing the first metal layer a layer; and patterning the first conductive layer and the second conductive layer. 2. The circuit board process of claim 1, wherein the first metal layer, the second metal layer, and the first barrier layer are removed via a worming method. 3. The circuit board process of claim 1, wherein the method of forming the conductive blind via structure comprises hole filling plating. 4. The circuit board process of claim 1, wherein the method of forming the blind via comprises: forming a photoresist layer on the second conductive layer, wherein the photoresist layer has a partial exposure to the second Opening of the conductive layer; 21 201004526 ^oc/n removing a portion of the layer in the opening by etching to expose the opening to the insulating layer; DX - ^ is removed by using a laser beam a portion of the insulating layer within the opening; to remove the photoresist layer. 5. As shown in the fourth paragraph of the patent application, the material of the line 5 is a positive photoresist. With </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Forming a first photoresist layer on the second protective layer; and forming a second photoresist layer on the second protective layer, wherein the first, and the layer has a partial exposure to the second protective layer The opening. The method of forming the blind hole according to the method of claim 2, wherein the method for forming the blind hole comprises: &quot;, removing the portion located in the opening by etching, the second and the 11th portion a second conductive layer, wherein the opening is partially exposed to the insulating layer, after the opening is partially exposed to the insulating layer, the 笫2' and the second photoresist layer are removed; and the transport layer is removed by using a laser beam The portion of the opening is the circuit board process described in item 6 of the patent scope, t = the metal layer of the brother, and further includes removing the first protective layer, when the second layer is removed from the metal layer, Further includes removing the second protective layer. Θ夕承谤 9. The circuit board process as claimed in claim 6, wherein 22 u〇c/n 201004526 the first photoresist layer and the second photoresist layer are made of a negative photoresist. The circuit board process described in the first embodiment of the invention is further described in which the second circuit layer is formed on the second conductive layer, and the second resist layer has a partial exposure to the second layer. An opening of the conductive layer; the second metal layer is formed on the second barrier layer when the conductive blind via structure is formed; and the second barrier layer is removed after removing the far second metal layer . 11. The method of forming the blind via in the circuit of claim 10, wherein the method further comprises: removing a portion of the layer in the opening by etching to expose the opening to the insulating layer; And the method of removing the portion located in the opening σ by using the laser beam. The method for removing the second metal layer in the line according to the first aspect of the patent application includes: Smuggling, forming a photoresist layer on the second metal layer, above the y electric blind via structure in the basin and the portion of the photoresist layer is "the U-th photoresist layer is a mask, the removed portion The second, removing the photoresist layer and the remaining second metal layer. (3), and Π. as described in claim 12, ^ ^ more than the photoresist layer and the remaining second $ = , the first resist layer and the remaining second metal layer. The grinding of the * patent application scope described in the first item is removed by a rotten manner. The board process, 23