TW201001676A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW201001676A
TW201001676A TW098103877A TW98103877A TW201001676A TW 201001676 A TW201001676 A TW 201001676A TW 098103877 A TW098103877 A TW 098103877A TW 98103877 A TW98103877 A TW 98103877A TW 201001676 A TW201001676 A TW 201001676A
Authority
TW
Taiwan
Prior art keywords
region
channel region
conductivity type
channel
semiconductor device
Prior art date
Application number
TW098103877A
Other languages
English (en)
Chinese (zh)
Inventor
Keisuke Uemura
Jun Osanai
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Publication of TW201001676A publication Critical patent/TW201001676A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW098103877A 2008-02-07 2009-02-06 Semiconductor device TW201001676A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008027246A JP2009188223A (ja) 2008-02-07 2008-02-07 半導体装置

Publications (1)

Publication Number Publication Date
TW201001676A true TW201001676A (en) 2010-01-01

Family

ID=40938172

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103877A TW201001676A (en) 2008-02-07 2009-02-06 Semiconductor device

Country Status (5)

Country Link
US (1) US20090200613A1 (OSRAM)
JP (1) JP2009188223A (OSRAM)
KR (1) KR20090086329A (OSRAM)
CN (1) CN101504946A (OSRAM)
TW (1) TW201001676A (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064854A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
FR2993983A1 (fr) * 2012-07-30 2014-01-31 St Microelectronics Rousset Procede de compensation d'effets de contraintes mecaniques dans un microcircuit
KR101972077B1 (ko) 2012-09-28 2019-08-19 삼성디스플레이 주식회사 유기 발광 표시 장치
US9293730B2 (en) 2013-10-15 2016-03-22 Samsung Display Co., Ltd. Flexible organic light emitting diode display and manufacturing method thereof
CN206774547U (zh) 2017-05-11 2017-12-19 合肥鑫晟光电科技有限公司 薄膜晶体管结构、电路结构、显示基板及显示装置
JP7092692B2 (ja) * 2019-01-22 2022-06-28 エイブリック株式会社 応力補償制御回路及び半導体センサ装置
US10957799B2 (en) 2019-02-27 2021-03-23 International Business Machines Corporation Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
US10903369B2 (en) 2019-02-27 2021-01-26 International Business Machines Corporation Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
JP7297479B2 (ja) * 2019-03-15 2023-06-26 エイブリック株式会社 半導体装置
JP2020177393A (ja) * 2019-04-17 2020-10-29 エイブリック株式会社 定電流回路及び半導体装置
US12513943B2 (en) * 2022-10-27 2025-12-30 Advanced Micro Devices, Inc. Apparatuses and systems for offset cross field-effect transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53675B2 (OSRAM) * 1972-03-16 1978-01-11
EP0466463A1 (en) * 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
US6140687A (en) * 1996-11-28 2000-10-31 Matsushita Electric Industrial Co., Ltd. High frequency ring gate MOSFET
US6601224B1 (en) * 1999-08-30 2003-07-29 Intel Corporation Layout to minimize gate orientation related skew effects
JP2001177357A (ja) * 1999-12-17 2001-06-29 Matsushita Electric Works Ltd 差動アンプ
US6794718B2 (en) * 2002-12-19 2004-09-21 International Business Machines Corporation High mobility crystalline planes in double-gate CMOS technology
JP2005197622A (ja) * 2004-01-09 2005-07-21 Sharp Corp 半導体集積回路設計装置、半導体集積回路設計方法、半導体集積回路の電流値相対ばらつき特性評価方法、半導体集積回路の抵抗値相対ばらつき特性評価方法、半導体集積回路の製造方法、制御プログラムおよび可読記録媒体
JP4984316B2 (ja) * 2005-08-18 2012-07-25 セイコーエプソン株式会社 半導体装置、電気光学装置及び電子機器
JP4602908B2 (ja) * 2006-01-10 2010-12-22 シャープ株式会社 半導体装置
JP5157289B2 (ja) * 2007-07-11 2013-03-06 ミツミ電機株式会社 Ｍｏｓトランジスタ及びこれを用いたｍｏｓトランジスタ回路

Also Published As

Publication number Publication date
JP2009188223A (ja) 2009-08-20
KR20090086329A (ko) 2009-08-12
US20090200613A1 (en) 2009-08-13
CN101504946A (zh) 2009-08-12

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