TW200949918A - Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers - Google Patents

Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers Download PDF

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Publication number
TW200949918A
TW200949918A TW098123632A TW98123632A TW200949918A TW 200949918 A TW200949918 A TW 200949918A TW 098123632 A TW098123632 A TW 098123632A TW 98123632 A TW98123632 A TW 98123632A TW 200949918 A TW200949918 A TW 200949918A
Authority
TW
Taiwan
Prior art keywords
layer
metal layer
thickness
barrier layer
barrier
Prior art date
Application number
TW098123632A
Other languages
English (en)
Chinese (zh)
Inventor
Hui Wang
Muhammed Afnan
Pei-Haur Yih
Damon L Koehler
Chaw-Chi Yu
Original Assignee
Acm Res Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Res Inc filed Critical Acm Res Inc
Publication of TW200949918A publication Critical patent/TW200949918A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
TW098123632A 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers TW200949918A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39794102P 2002-07-22 2002-07-22
US40399602P 2002-08-17 2002-08-17

Publications (1)

Publication Number Publication Date
TW200949918A true TW200949918A (en) 2009-12-01

Family

ID=30773050

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098123632A TW200949918A (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
TW092120001D TW200409223A (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW092120001D TW200409223A (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers

Country Status (9)

Country Link
US (1) US20050245086A1 (https=)
EP (1) EP1573783A2 (https=)
JP (2) JP2006511699A (https=)
KR (1) KR101151456B1 (https=)
CN (1) CN101427351B (https=)
AU (1) AU2003256673A1 (https=)
CA (1) CA2491951A1 (https=)
TW (2) TW200949918A (https=)
WO (1) WO2004010477A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200845162A (en) * 2006-05-02 2008-11-16 Acm Res Inc Removing barrier layer using an eletro-polishing process
US7667835B2 (en) * 2006-08-28 2010-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for preventing copper peeling in ECP
US20090133908A1 (en) * 2007-11-28 2009-05-28 Goodner Michael D Interconnect structure for a microelectronic device, method of manfacturing same, and microelectronic structure containing same
WO2010020092A1 (en) * 2008-08-20 2010-02-25 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
WO2013173998A1 (en) * 2012-05-24 2013-11-28 Acm Research (Shanghai) Inc. Method and apparatus for pulse electrochemical polishing
JP6186780B2 (ja) 2013-03-18 2017-08-30 富士通株式会社 半導体装置およびその製造方法
CN104952787B (zh) * 2014-03-26 2020-03-27 盛美半导体设备(上海)股份有限公司 径向厚度自动修整方法
CN106463455B (zh) * 2014-07-08 2019-02-15 盛美半导体设备（上海）有限公司 一种形成金属互连结构的方法
JP2017536692A (ja) 2014-10-31 2017-12-07 ビーコ プリジション サーフェイス プロセシング エルエルシー ウェット・エッチング・プロセスを実行するための装置および方法
CN105300324B (zh) * 2015-09-16 2018-06-01 浙江工业大学 一种脆性材料表面在抛光前的评价方法
TWI738757B (zh) 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
US10541180B2 (en) 2017-03-03 2020-01-21 Veeco Precision Surface Processing Llc Apparatus and method for wafer thinning in advanced packaging applications
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
CN113604864A (zh) * 2021-06-29 2021-11-05 晋西工业集团有限责任公司 一种深度可控的电解剥层方法
EP4299800A1 (de) * 2022-07-01 2024-01-03 Technische Universität Bergakademie Freiberg Vorrichtung und verfahren zur plasmaelektrolytischen bearbeitung der elektrisch leitfähigen oberfläche eines werkstücks durch elektrolytstrahlen
CN120109089B (zh) * 2025-05-12 2025-07-22 合肥晶合集成电路股份有限公司 导电插塞的制备方法、半导体器件的制备方法及半导体器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447668B1 (en) * 1998-07-09 2002-09-10 Acm Research, Inc. Methods and apparatus for end-point detection
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
JP2002531702A (ja) * 1998-11-28 2002-09-24 エーシーエム リサーチ，インコーポレイティド 半導体ワークの電気めっきおよび／または電解研磨中に半導体ワークを保持して位置決めする方法および装置
US6234870B1 (en) * 1999-08-24 2001-05-22 International Business Machines Corporation Serial intelligent electro-chemical-mechanical wafer processor
US6284622B1 (en) * 1999-10-25 2001-09-04 Advanced Micro Devices, Inc. Method for filling trenches
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
EP1446514A4 (en) * 2001-11-13 2007-11-28 Acm Res Inc ELECTROPOLIER ASSEMBLY AND METHOD FOR ELECTROPOLISHING CONDUCTIVE LAYERS
US6935922B2 (en) * 2002-02-04 2005-08-30 Kla-Tencor Technologies Corp. Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing
US6861354B2 (en) * 2002-02-04 2005-03-01 Asm Nutool Inc Method and structure to reduce defects in integrated circuits and substrates

Also Published As

Publication number Publication date
CA2491951A1 (en) 2004-01-29
WO2004010477A3 (en) 2008-10-30
AU2003256673A1 (en) 2004-02-09
JP2007073974A (ja) 2007-03-22
CN101427351B (zh) 2011-12-21
AU2003256673A8 (en) 2008-11-20
US20050245086A1 (en) 2005-11-03
CN101427351A (zh) 2009-05-06
KR101151456B1 (ko) 2012-06-04
JP2006511699A (ja) 2006-04-06
EP1573783A2 (en) 2005-09-14
KR20050021553A (ko) 2005-03-07
TW200409223A (en) 2004-06-01
WO2004010477A2 (en) 2004-01-29

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