200947542 九、發明說明： 【發明所屬之技術領域】 本發月係與晶圓切割方法有關，特 影像感測單元（CIS)晶圓之技術有關。 、刀。丨接觸式200947542 IX. INSTRUCTIONS: [Technical Fields of the Invention] This is related to the wafer cutting method and the technology of the special image sensing unit (CIS) wafer. ,Knife.丨 contact
【先前技術J 按’傳統上用於接觸式影像感測單元（CQntact 之ί片係採用鎮石刀具來進行晶圓之切割，如 切割刀12 一般係由—圓形的鑽石刀片所 的二？！片的高速旋轉而對表面已製作有電路層 的曰曰圓1加以切割，其中，為便於進行晶1Μ的切則，於 通常設有多道相互縱橫交錯的切割❹：將晶 圓1界疋出複數個晶片10。 為降低成本，業界無不力求於每片晶 ，片_，因而晶片1。間之切割道u距離要= 乍，相對應地，晶圓切割刀12的寬度亦需越來越薄；當刀 ❹片越薄，刀片的使用壽命亦隨之降低；且切割❹變窄 後，切割的產能與良率亦降低，導致每一晶片的成本反較 以前增加而不符所需。 m Μ參第—圖’為現行具有多個矩形的接觸式影像感測 早兀曰:曰片20之晶圓2，為於每片晶圓2上獲致最多晶片2〇 之數置，其相鄰晶片2G間之切割道21已甚小；#中，相鄰 晶片20之短邊201❾間距係為寬切割道211，而相鄰晶片 20之長邊202的間距係為長切割道Η〗。 «月參第二圖Α以及第三圖β，當以刀片12進行切割道 5 200947542 ^之切割時’部份寬切割道2111以及部份長切割道2121切 』時曰被刀片12切除而損失，切割後，晶片2〇之侧邊僅留 些微的邊緣，有些甚至會切割至晶片20，故經刀片12切割 該切割道21後甚常造成晶片20之不良。 近幾年由於雷射之内部切割（StealthDidng)技術係透過 雷射改變石夕的晶體結構以於晶圓内部產生應力，使所欲切 狀晶片分開，时切割道可趨近零損失之特點，切割道 IS:到甚小且具有良好之切割品質，故業界陸續導入以 雷射來進行晶圓之切割。 然卩雷射切割晶圓時，晶片需重新佈設以縮小切割 =/、相關製程之設備亦需配合調整；故此過渡期間仍 以槎井產…： 方面為提升切割品質 ^升“及良率，導人雷射切割技術亦為刻不容緩，因 此有於原晶圓上以雷射進行切割晶片之考量。 ❹ 因=為使多個晶片緊密排列時可獲取連續性之掃描 片之短邊僅留些微的邊緣。惟二：：=切除’以於晶 片之切割時，由於雷射不丄；射㈣晶圓上進行晶 ^ 呆留其完整之邊緣，應用於接觸式影像感測單纟邊 irrrgrs〇r，cis)之晶片時’因晶片之短邊有限定的 ί:ΓΓ、排列多個晶片’進而獲取高解析度之掃描 影像雷射切割原晶圓之寬切割道顯不符所需。 一種：ΐΓΑ以及第四圖Β，係為以雷射22切割之另 式，於原晶圓2上，相鄰晶片2〇之長邊2〇2的長切 6 200947542 。】道212上係以一道雷射切割，另於相鄰晶片2〇之短邊 1的寬切割道211上予以二道雷射切割，冀藉由二道雷 射之切割以移除部份寬切割道2111 ;然、，由於相鄰晶片20 之知邊201的部分寬切割道2111距離過小（僅約 •〇2mm) ’故雷射22切割後易附著於二側晶片如之短邊 201上而難以單獨分離移除。 口此如何克服當前技術之種種缺失，實為目前亟待 解決之課題。 ❹【發明内容】 之狀Ϊ發明之主要目的’在原晶圓不改變晶圓切割道距離 孫下，提供一種接觸式影像感測單元之晶圓 Ϊ分=切I:?晶片之短邊間的寬切割道一 之掃描影像3Γ彳夕個晶片緊密排列時可獲取高解析度 ❹之狀3明:二一:::觸:原晶圓不改變晶圓切割道距離 法，传二ί 觸式影像感测單元之晶圓切割方 法，係以雷射切割矩形晶片之圓刀d方 切割晶片長邊之1的長切割道，以保持 為達成卜、十、^ 增加晶片之產能及良率。 马違成上述之目的，本發明 千 測單元之晶圓切割方法，包括提供—二接觸式影像感 片之晶圓，相鄰晶片短邊之間距係；:3有複數個矩形晶 片長邊之間距係為長切割道’·其切巧之刀：道，而相鄰晶 邊等寬切割道，而以雷射切對該等長切^係以刀片切割 7 200947542 【實施方式】 =:揭；之，割方法’係可運用於各式 之切割製程中。然’因使用刀片切割晶圓：：：：_ 割道，故特別適用於晶片間之切割道具有寬切失切 之間距有特別要求之晶圓切割，如接觸J =且晶片 (Contact Image Sensor，CIS)之晶片；由於庫:'貝丨單兀 口口- + 於應用接觸式影傻咸：目丨丨 ❹ :凡時，係以多個晶片緊密排列以獲取連續性之:广 像，因此，矩形晶片之短邊的邊緣有要求 = 晶片之長邊間之距離則無特殊之要求，所以a Η ，而 緣距離不限。 曰曰片長邊的邊 係為呈矩形之接“心 ::曰曰片（實際實％時亦可切割不同形狀之晶片， 才目鄰晶片30之間係為切割道31，該等㈣j道 區 ©寬切割道311以及長切割道312，其中 ^ 刀為 為該晶片30之短邊301間的間距，、刀311係 J间此而長切割道312 # Λ兮 晶片30之長邊302間的間距；切割該晶圓3時，納； 切割道3!而使晶圓3分割為複數個晶片％，利用本 圓方法時，係以傳統之刀片12切割寬切割道;η， 並以雷㈣之㈣㈣陶th Didng)方式Μ長切割道 312，最後再施加拉力於長切割道312兩侧，即可沿切割 道31而使該晶圓30分割為複數個晶片3〇。 α 請同參閱第五Β圖，以太獻ηη &加， 圃以本發明接觸式影像感測單元之 8 200947542 日日圓切割方去切割該晶圓3時該晶片3〇之短邊則的寬 切割道311 Μ由刀片切割後，將損失晶片3〇之短邊观間 之邻：寬切割道3111 ;而該晶片3〇之長邊3〇2的長切割道 3之係以雷射方式進行切割；切割後，將多個該些晶片30 f在排列時’由於部分寬切割道3111之損失，晶片30之短 僅留些微的邊緣，故可緊密排列多個晶片30 ;另由 於以雷射22切割時可保持晶片3〇之長邊312的切割品質， 该晶片3〇之長邊312時幾乎無損失切割道311，故甚少造 成該晶片30之不良。 圓切I: 2第：圖’係為本發明接觸式影像感測單元之晶 圓刀J = L之流程圖’其步驟包括： 郝曰μ⑻提供晶圓’該晶圓係包含有複數個晶片，其相 ==切割道，且該等晶片短邊之間距係為寬:刀 〇 ^而其長邊之間距係為長切割道。 ❹ ⑼以刀片切割該等寬切割道。 ⑹以雷射切割該等長切割道。 述方中該步驟(e)亦可於步驟(b)前進行，亦即， 雷射切割該等長切割道之+ 切割道之步驟前、隹， 於以刀片切割該等寬 割一方法係為内部切 =距係為寬切割道;最後，施加長= 兩側/可使該晶圓分割為複數個晶片。 道之 口，參第七圖’係為本發明接觸式影像感測單元之晶片 200947542 =示，。完成切割後’複數個表面具電路之接觸式影 名測早το晶片3G係等間距地緊密排列於—具有控制電路 41=基板4，設置晶片30於基板4時，晶片30與晶片30間 之間距需符合一定之距離以獲取高解析度之掃描影像。 綜上所述，本發明接觸式影像感測單元之晶圓切割方 片間St刀片切割晶片間之寬切割道’以及以雷射切割晶 3切害'J道，以保持排列於基板時晶片間一定之間 距，且可提升產能及晶片之良率。 '二發明之較佳可行實· 發明說明書及圖式 内，合予陳明。均同理皆包含於本發明之範圍 圖式簡單說明】 圖係為S知以切割刀進行晶圓切割之示竟 IbCi ▲ ❹[Prior Art J Press 'Traditionally used for contact image sensing unit (CQntact's 片 film uses a stone cutter to cut the wafer, such as the cutter 12 is generally made up of a round diamond blade? The high-speed rotation of the sheet cuts the dome 1 on which the circuit layer has been formed. In order to facilitate the cutting of the crystal, a plurality of mutually intersecting cutting ridges are usually provided: the wafer 1 is bounded A plurality of wafers 10 are taken out. In order to reduce the cost, the industry has no difficulty in finding a wafer, and thus the distance between the wafers and the wafers is =, correspondingly, the width of the wafer cutter 12 is also required. Thinner and thinner; the thinner the blade, the longer the life of the blade; and the lower the cutting radius, the lower the productivity and yield of the cutting, resulting in a lower cost per wafer than the previous one. m Μ 第 — 图 图 为 为 为 为 为 为 为 为 为 为 为 为 为 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行 现行The scribe line 21 between adjacent wafers 2G is very small; #中, adjacent wafer The short side 201 ❾ 20 pitch is a wide scribe line 211, and the long side 202 of the adjacent wafer 20 is spaced apart by a long cut Η 〗 〖 «月 第二 second map 第三 and the third figure β, when the blade 12 Cutting Road 5 200947542 ^ When cutting "partial wide cutting lane 2111 and partial long cutting lane 2121 cutting", the crucible is cut and lost by the blade 12, after cutting, the side of the wafer 2 is only slightly edged, and some even It will cut to the wafer 20, so the wafer 20 is often cut after the cutting of the dicing street 21 by the blade 12. In recent years, the internal cutting of the laser (StealthDidng) technology changes the crystal structure of the stone to the crystal through the laser. Stress is generated inside the circle, so that the desired wafer is separated, and the cutting track can be close to zero loss. The cutting channel IS is very small and has good cutting quality. Therefore, the industry has introduced lasers for wafers. Cutting. When the laser is used to cut the wafer, the wafer needs to be re-arranged to reduce the cutting = /, and the related process equipment needs to be adjusted. Therefore, the well is still produced during the transition period: In terms of improving the cutting quality, Rate, lead laser Cutting technology is also a matter of urgency, so there is a consideration of laser cutting on the original wafer. ❹ Because the short edges of the scanning sheet that can obtain continuity when the multiple wafers are closely arranged leave only a slight edge. 2::=Resection's for the cutting of the wafer, because the laser is not flawed; the shot (four) wafer is crystallized to leave its complete edge, applied to the contact image sensing single edge irrrgrs〇r, cis) In the case of a wafer, the wide scribe line of the laser-cut original wafer is required to obtain a high-resolution scan image because the short side of the wafer has a limited ί: ΓΓ, arranging a plurality of wafers. One: ΐΓΑ and fourth Figure Β, is a laser-cutting alternative, on the original wafer 2, the long side of the adjacent wafer 2〇2〇2 long cut 6 200947542. The channel 212 is cut by a laser, and two laser cuts are performed on the wide cut track 211 of the short side 1 of the adjacent wafer 2, and the width is removed by cutting the two lasers. The scribe line 2111; however, since the distance of the partial wide scribe line 2111 of the known edge 201 of the adjacent wafer 20 is too small (only about 〇 2 mm), the laser 22 is easily attached to the two sides of the wafer such as the short side 201 after being cut. It is difficult to separate and remove separately. How to overcome the shortcomings of current technology is a problem that needs to be solved urgently. ❹ [Summary of the Invention] The main purpose of the invention is to provide a contact image sensing unit wafer division=cutting I:? between the short sides of the wafer, without changing the wafer scribe line distance from the original wafer. Scanning image of wide scribe line 3 Γ彳 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 个 : : : : : : : : : : : : : : : : : : : : : : : The wafer cutting method of the image sensing unit is to cut the long cutting track of the long side of the wafer by the round knife d of the laser cutting rectangular wafer to maintain the throughput and yield of the wafer. For the purpose of the above, the wafer cutting method of the thousand measuring unit of the present invention comprises: providing a wafer of two-contact image sensing sheets, a distance between short sides of adjacent wafers; 3 having a plurality of rectangular wafers with long sides The spacing is a long cutting path'·the chopping knife: the road, and the adjacent crystal edge is equal to the width of the cutting channel, and the laser cutting is the same length cutting system to cut the blade 7 200947542 [Embodiment] =: The cutting method can be applied to various cutting processes. However, due to the use of a blade to cut wafers::::_ kerf, it is especially suitable for wafer dicing between wafers with special requirements for wide-cut miscut, such as contact J = and wafer (Contact Image Sensor , CIS) wafer; due to the library: 'Beibei single mouth mouth - + in the application of contact shadow silly: see: Whenever, a plurality of wafers are closely arranged to obtain continuity: wide image, Therefore, the edge of the short side of the rectangular wafer has a requirement = the distance between the long sides of the wafer is not particularly required, so a Η and the edge distance is not limited. The side of the long side of the cymbal is a rectangular connection. "Heart: 曰曰 片 (In actual case, the wafers of different shapes can also be cut, and the wafers 30 are cut between the adjacent wafers 30, and the (four) j-channel area The wide scribe line 311 and the long scribe line 312, wherein the knives are the spacing between the short sides 301 of the wafer 30, and the knives 311 are between the J and the long dies 312 # Λ兮 between the long sides 302 of the wafer 30 Spacing; when the wafer 3 is cut, the wafer 3 is cut into a plurality of wafers %, and when the method is used, the conventional cutting blade 12 is used to cut the wide cutting track; η, and Ray (4) (4) (4) Tao's method of cutting the long scribe line 312, and finally applying a pulling force to both sides of the long scribe line 312, the wafer 30 can be divided into a plurality of wafers 3 along the scribe line 31. α Please refer to the same Β , , , , , , , η η η η η η η η 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 After the blade is cut, the short side of the wafer 3 Å will be lost: the wide scribe line 3111; and the long side of the wafer 3 3 3 The long cutting track 3 of the crucible 2 is cut by laser; after cutting, a plurality of the wafers 30 f are arranged, and the short length of the wafer 30 is only slightly left due to the loss of the partial wide cutting path 3111. Therefore, the plurality of wafers 30 can be closely arranged. Moreover, since the cutting quality of the long side 312 of the wafer 3 is maintained when the laser 22 is cut, the long side 312 of the wafer 3 has almost no loss of the cutting lane 311, so it is rarely caused. The wafer 30 is defective. Circular cut I: 2: Figure ' is a flow chart of the wafer cutter J = L of the contact image sensing unit of the present invention'. The steps include: Hao Hao μ (8) provides the wafer 'the wafer The system comprises a plurality of wafers whose phases == scribe lines, and the distance between the short sides of the wafers is wide: the knives are long and the distance between the long sides is a long scribe line. ❹ (9) cutting the equal width cutting with a blade (6) Cutting the lengthened cutting track by laser. In step (e), the step (e) may also be performed before the step (b), that is, before the step of laser cutting the + cutting channel of the long cutting track,隹, the method of cutting the equal width by a blade is an internal cutting = the distance is a wide cutting path; finally, applying = Both sides / can divide the wafer into a plurality of wafers. The mouth of the channel, refer to the seventh figure ' is the wafer of the contact image sensing unit of the present invention 200947542 = shown, after the completion of the cutting 'plural surface circuit The contact type film name measurement το wafer 3G is closely arranged at equal intervals - with the control circuit 41 = the substrate 4, when the wafer 30 is placed on the substrate 4, the distance between the wafer 30 and the wafer 30 needs to meet a certain distance to obtain a high The scanned image of the resolution. In summary, the wide-cut scriber between the wafer-cut slabs of the contact-type image sensing unit of the present invention cuts the wafer between the wafers and the laser cutting 3 Maintain a certain distance between the wafers when arranged on the substrate, and increase the productivity and yield of the wafer. In the description and drawings of the invention, the invention is better and more feasible. All of the same are included in the scope of the present invention. The drawing is a simple description. The figure is S. The cutting of the wafer is performed by the cutting blade. IbCi ▲ ❹
第二圖 第三圖A 第三圖B 第四圖A 第四圖B 第五圖A 第五圖B 圖 係為晶圓切割道之局部放大圖。 為以刀片切割晶圓之切割道示意圖。 係為第三圖A切割後之示意圖。 ::以雷射切割晶圓之切割道示意圖。 ^為第四圖A切割後之示意圖。 發明以刀片切割晶圓之寬切割道 係2切割晶圓之長切割道之示意圖。 ·、、、弟五圖A切割後之示意圖。 200947542 第六圖 第七圖 係本發明接觸式影像感測單元之晶圓切割 方法之流程圖。 係本毛明接觸式景彡像感測單元之晶圓切割 方法之晶片使用示意圖。 【主要元件符號說明】 1 晶圓 10 曰 μ 曰曰月 11 切割道 12 晶圓切割刀 2 晶 圓 20、 30 晶片 201 、301 短邊 202 、302 長邊 21、 31 切割道 211 、311 寬切割道 2111 、3111 部分寬切割道 212 、312 長切割道 2121 部分長切割道 4 基板 41 控制電路 a~c 步驟Second Figure Third Figure A Third Figure B Fourth Figure A Fourth Figure B Fifth Figure A Figure 5 Figure B is a partial enlarged view of the wafer scribe line. A schematic diagram of a cutting path for cutting a wafer with a blade. It is a schematic diagram after cutting in the third figure A. :: Schematic diagram of the cutting path for laser cutting wafers. ^ is a schematic diagram after cutting in the fourth figure A. The invention discloses a schematic diagram of a long scribe line for cutting a wafer by cutting a wide scribe line of a wafer. ·,,,,,,,,,,,,,,,, 200947542 Fig. 7 is a flow chart of a wafer cutting method of the contact image sensing unit of the present invention. A schematic diagram of wafer use for a wafer dicing method of a Benming contact illuminating sensor. [Major component symbol description] 1 Wafer 10 曰μ 曰曰月11 Cutting street 12 Wafer cutting blade 2 Wafer 20, 30 Wafer 201, 301 Short side 202, 302 Long side 21, 31 Cutting path 211, 311 Wide cutting Road 2111, 3111 Partial wide cutting path 212, 312 Long cutting line 2121 Partial long cutting path 4 Substrate 41 Control circuit a~c Step