TWI316754B - Image sensor fabrication method and structure - Google Patents

Description

1316754 V. DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to a semiconductor element, particularly to a solid color tear film. ??? [Prior Art] The present invention is a continuation of U.S. Patent Application Serial No. 1/456,759, filed on Jan. 6, 2003. Color filters are suitable for use in color image sensors and have been described in U.S. Patent Nos. 61,71,885, 6,395,576, 6,,,,,,,,,,,,,,,,,,, The structure of a color image sensor can be typically a Charge-Coupled Device or a Complementary Metal Oxide Semiconductor (CMOS) photodiode array structure. The structure includes a photosensitive layer which is patterned under one or more layers of the color optical filter array and over an array of surface layers on which the micromirror elements are formed. In some conventional architectures, four adjacent pixels are used in the image sensor to form a color pixel. Each of the four adjacent pixels is covered by a filter of a different color, wherein The color of the filter is selected from red, blue and two green pixels, so that each monochromatic element can only expose one of the three basic colors, and the simple geometric addition and subtraction of the three colors. It can present a full-color picture. Figs. 1A and 1B show a color filter having a strip-defect. This plastic defect occurs because the thickness of one of the color resist layers is greater or less than a normal thickness.

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V. INSTRUCTIONS (2) Thickness and strip defects occur because the blue and green color resist layers are different. The sensor includes a plurality of lines (the scribe is in the array; the plurality of filter areas are formed by some lines of ί=the eyebrows are formed in the complex area, and the defect is not - the normality is a true The thickness of the green resist layer is less than 3 = value, or if the thickness of the green resist layer is greater than a normal value, the thickness of the layer is less than a normal value. Similarly, in the first β ® , this defect is due to red The thickness of the green color resist layer is different. The circle τ is the cross-section of a conventional CMOS image sensor (CIS) ι〇〇. The CMOS image sensor has a complex engraved line 丨〇9 The substrate, wherein the scribe line 109 surrounds at least one of the filter regions 〇1. The base reflector 107 may be an insulating substrate or a H-edge layer on a semiconductor substrate, such as a dioxide dioxide 〇Si〇2 The plurality of engraved lines 1〇9 form a vertical line grid on a wafer having a plurality of light-receiving areas 101. The filter sheet area 101 includes an active area 丨02 and a pin having a pad 122 therein. Pad area 108. Active area 1〇2 has a photodiode formed therein The well region of η or P+i• is, for example, a polycrystalline layer. The active region has a protective layer 4, such as a tantalum nitride layer SiN, and the protective layer 114 has a plurality of bottom metal regions 3. The protective layer 114 has a first A flat layer 1 is formed thereon, which may be a resist layer having a thickness higher than a step height of the surface of the wafer. The first flat layer 丨I, a mold on the surface of the wafer, may be planarized, for example By forming the photoresist into a viscous fluid at a given baking temperature, or by flattening the surface of the photoresist while heating by a flat casting, the first first planar layer 1

1316754 V. Inventive Note (3), the color resist layers formed with blue, green, and red are named 丨丨1 and Π3. A second flat layer 1 〇 4b is located above the filters ill and 113. A microlens layer 106 is formed over the second planar layer i〇4b. The height 119 of the second flat layer 104b is about 4 5 microns with respect to the top end of the protective layer 114. An additional height 118 of about 5 microns to 2 microns is about between the top end of the pad 122 and the top end of the protective layer 114, so the total step height is about 1 f and the top of the pad 122 is about 6 5微米。 Micron to 6. 5 microns. The signal error of the sap filter is too large, and the CM s image sensor has a θ effect, resulting in a yield loss of 15% to 20%. For example, the standard error of the color signal of the sample of the Shenxuan people is: blue 4 3. 93/0 ’ rate color is 2.84% and red is 〇. 5. Buffon L 68/, this formation of a good yield Cpk low deposition process and related micro-mirror array formation process will win the flood season 'test time yield and final cost is widely I: color please ▲ with less signal error There is a need for a r-color filter first-stage process method that can increase the yield of seven. Yunliang Yangzhi [Invention] The semiconductor substrate has too few M-filters, and the light-strip area to include: these steps provide a flat layer so that the second layer can be lowered to reduce the step height; And forming at least one layer having a height close to the height of the flat layer and a color resist layer on the flat layer.

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[Embodiment] 2 〇屮 3 ί 6 曰 6:: Please refer to US Patent Application 1 () / 456, 759. The description of the specific embodiment is related to the eve + imaginary η. Shi # is the description of the description of this case is considered to be more words, such as "lower", "above","level","level",上比^^^ „t· Λ· ·'.„l ϊ $ : These ratios i should refer to the position as described in the specification or as shown in the figure. = The better understanding of the words 'These relatives are conveniently described' - and are not required to be inserted. The device needs to be located at the -special position, where the same reference numerals represent the same. One of the main reasons why the inventor decided to cause a color signal error was the strip nm). The reason for the formation of strip defects is that the thickness of the color resist layer and the ((3)lot·resist layer are caused by unevenness in the pixels or between the pixels, especially in the blue and green color resist layers, when viewed from the active area, these The uneven color barrier will present blue and green bars: the regular area. , soil 4 does not inventors also decided that the serious front-end pattern problem is the cause of the strip defect. That is, the front end of the process flow leaves an uneven surface on the surface of the semiconductor, and the surface is used to form a color filter, and the uneven surface affects subsequent deposition of a flat layer thereon. The inventor even decided that the deeper the step height of the strip-shaped defects on the substrate, the strip molding

Page 10 1316754 V. Description of invention (5)

Defects can get worse. A second reason is the step height of the foot pad. Another reason is that the higher the coating speed of the photoresist, the higher the coating speed, the more the strip defect. However, the step height of the line is the main cause of the strip defect, and the step height of the pad is another important cause of the strip defect. Fig. 2 is a cross-sectional structural view showing a color filter element 2 〇 形成 formed by a specific embodiment. Element 200 has a substrate 207 having a plurality of scribe lines 210, wherein the scribe lines 210 surround at least one of the filter regions 201. The substrate 207 may be an insulating substrate or an insulating layer on a semiconductor substrate, such as cerium oxide, on a wafer having a plurality of illuminating sheet regions 201, and the plurality of scribe lines 2丨〇 forms a vertical line lattice. The filter region 201 includes an active region 2〇2 and a pad region 208 having a pad 222 therein. The active region 2 〇 2 has a well region of the η- or p+ type in which the photodiode is formed, for example, a polycrystalline germanium layer. The active region 202 has a protective layer 214, such as a tantalum nitride layer SiN, and the protective layer 214 has a plurality of bottom metal regions 203. The protective layer 214 has a first planar layer 2〇4& formed thereon, which may be a resist layer, thickness Higher than the step height of the wafer surface. Preferably, the first planar layer 204a is formed by a photoresist having high sensitivity and high transparency. The first planar layer 204a may be a mold on the surface of the wafer and may be planarized, for example, The photoresist surface is flattened by heating the photoresist in a raised baking temperature or by heating it with a flat casting. Above the first planar layer 204a, color resist layers formed with blue, green, and red are named 211 and 213 'where the red v resist layer is not shown in FIG. 2 because of red, green, and Blue resist layer $ column

$11页1316754 V. Description of the invention (6) 'However, a person familiar with the art should understand that when viewed from above, these resist layers are arranged in groups, four of which are green resistive elements. They will be arranged in a diamond shape, instead of the red resistive element, which is a blue resist. The layer elements will be arranged in the center of each diamond shape. Another area pattern (not shown) of this same component can appear to have only a green resist layer and a red resist layer element. A second planar layer 204b is located on the filters 211 and 213. A microlens layer 206 is formed over the second planar layer 2〇4b. The characterization line 20 0 has an initial step height η which is related to the integrated circuit (IC) technology form. For example, the 'one-inch 6-micron CMOS image sensor has a step height Η of 3.33 micrometers, and a 0.35 micron CMOS image sensor has a step height η of 0.45 micrometers, a 〇2 5 micron C Μ 0 S image sensing has a ratio of 4. 5 5 microns deep drawn line step height Η 'Other integrated circuit (1C) technology will form a different step height Η from the above. In a specific embodiment, the step of depositing the first planar layer 2 〇 4 a may be adjusted to at least include partially filling the engraved line 2 使用 with a resist material to reduce the southness of the engraved line 210 to H 2 , Wherein the distance between the surface of the resist layer and the surface of the substrate after partially filling the engraved line 21〇, by using the resist material to at least partially fill the engraved line 21 〇, the uneven appearance can be reduced The geper elimination can form a flat subsequent color resist layer 2U and 213. * 〆 In Fig. 2, the resist layer 2 1 2 is formed only in the engraved line 2丨〇 to partially fill the engraved line. In some embodiments, the at least partially filled resist layer is completely filled to the top of the resist layer and below the surface of the substrate. Also, $1316754, the invention description (7) leaves a positive step height. In the rest of the full fill, this section will be further described in the thousands of scribe lines 21 0 is completed - Figure 3 is shown for deposition in Figure 2: In some embodiments, for a light of 1 2 Cover plan. 21 〇 part is light-transmitting' and after the non-engraving * & α ° mask is exposed to the engraved line, the resist layer is opaque to the engraved line. The soluble brain blade remains insoluble in the portion of the non-characterization line, i.e., hardens, and in some embodiments, the reticle is; The portion of the squall line causes the positive photoresist condition to become reversed, that is, in the non-characterization line portion, such a reticle for a τ 'allows the resist layer to remain only in the score is transparent, while the line portion β s ' The non-characterization line portion remains soluble and is removed. The resist layer of germanium and light is in the line of characterization. In some embodiments, a chemical, 'six, and a soluble resistive layer of the portion 210 of the line is applied. And 'gluten solution and remove the non-etching plasma etching process, using the plasma field to add to the fan's method, using the 210 layer of the resist layer to chemically dissolve the resistance H = non-characterization line 21〇. The additional resistance layer 212 is left on the engraved line. Figure 4 shows another embodiment of the color filter 300 in which the resist layer η? is completely filled in the scribe line and continues to be filled on the substrate to about A flat layer 204a is of equal height. In Fig. 4, the resist layer 412 is deposited over the entire substrate except at the nearest neighboring pad 222. This results in a better "canned' and is believed to enhance the average thickness of the color resist layers 21 1 and 21 3 . Figure 5 shows the step of performing a photoresist deposition step to deposit a resist layer in Figure 4.

1316754

A plan view of the reticle 400 used. If a negative photoresist is used, the mask 4j0 is opaque except for the square area 3〇2, and the rest of the area is light transmissive. This opaque area covers the pad area 2〇8 and the surrounding pad. 222. The cover is opaque in the area 302. As a result, when the substrate is exposed through the mask 4, except for the resist layer located in the square area 3〇2, the remaining portions of the resist layer are exposed after the exposure process. The barrier layer outside the square area 3〇2 becomes insoluble, and the soluble barrier layer located in the square area 3〇2 is removed 'for example using the chemical solvent or plasma dry etching method as described above' The resist layer 4 1 2 will be retained in the line of characterization. In the second embodiment, the pattern of the reticle is the opposite. In this case, the Luzheng photoresist is used, so only the pad area is exposed, and the resist layer of the exposed portion becomes achievable/dissolvable, and is located at the pin. The resist layer portion outside the pad area includes a resist layer located in the engraved line to maintain a state in which it is not dissolved. The material of the resist layers 21 2 and 412 may include any energy sensitive material which may be formed on a substrate and form a pattern in the process of the integrated circuit. The resist material 212 may include energy including a plurality of materials. An energy-sensitive polymer, for a negative photoresist, can change from solubility to insolubility after light, but for a positive photoresist, it is never dissolved after exposure. Sex turns into solubility. The barrier material is often tailored to a particular exposure source. In some embodiments, the 248nnj # barrier material is for deep ultraviolet (DUV) at 248 nm, while the 193 nm barrier material is for 193 nm. Deep ultraviolet light, which is only an example of 'other resist layers, including uv, DUV, X-ray and E-ray resist layers can also be used in the present invention.

Page 14 1316754 V. INSTRUCTIONS (9) "One~ ------ mu 丄 Use a process ′ for example, a remnant process to planarize the resist layer 212 or 412. In some embodiments, application to the resist 212 or 412 and etch back the resist layer 212 or 412 to repeat the planarization of the resist layer multiple times until an intended planarization result is achieved, and the step height in = Can be reduced to an intended size. Line in some embodiments, the reticle as shown in Figure 3 is reused one or more times to deposit a photoresist layer in the engraved line, and then use a reticle as shown in Figure 5 A resist layer is deposited on the surface of the substrate 207. After deposition of the resist layer 412, a photoresist layer can be deposited on the active region 2〇2 of the filter region using a standard planarization mask (not shown) to form a planar layer 204a. At least one color resist layer 21 1 and 21 3 is formed on the substrate. The substrate includes at least one filter region in which the hardened (insoluble) barrier material is left in the engraved line and then formed. A second planar layer 204b' and a micromirror layer 206 are formed. Once the resist layer 41 2 is deposited in the engraved line 21 0 , the resist layer can be permanently stored in the trace line, and the resist layer present in the trace line does not hinder the subsequent process operation and does not hinder the performance of the component. . The resist layer 412 can be selectively removed when needed.

In one experiment, a 35 μm CMOS image sensor was formed. Before the deposition of the resist layer 41 2 , the step height of the line was plotted to be 4.55 μm, and the photomask deposition as shown in Fig. 5 was used. After the first resist layer, the step height, that is, the distance from the top of the resist layer to the top of the substrate is reduced to 2. 6 microns, which is reduced by about 43%. After depositing the second resist layer with the same mask, the step height is reduced to 〇. 6 μm. This represents a step height reduction of about 8, and this experiment shows the yield ‘ Cpk

Page 15 1316754 V. Description of invention (ίο) The calculation is greatly enhanced. Table 1 provides the results of the non-average color. In Table 1, the '001' mask is a conventional mask for forming a flat layer 204a on the active area 2〇2, as shown in Figure 5. Photomask. Therefore, the line labeled ."1X001A reticle" is shown as a conventional process, with the mean and standard deviation being the signal error of the color filter. L a P • Color P IX 001 Α Female t hood β 1X001B light army parallel use 001 A light army p 2X 001B reticle using 00 1 A present parallel army β average β birch quasi ^ average ρ 檫 standard deviation ρ average p The green cover P blue P contains .49%·, 3.93%., -Ci. ο δ .1 1.16%, 0.93%, 0.84%, 4.38%, 0.53%, 1.96, . Green P 6.45%., 】.δ 4 % .1 0.12., X, X, X, h4.13%.. ύ.45%. 2.5, Red P i, 6 S % , ι 0.43., X, Γ χ. Γ X-, 4.34%, Γ〇.51%, Γ 2.07, in Table 1, the process indicated by the line of "1X001B reticle using οοΐΑ光罩", where the ooiB reticle as shown in Figure 5 is active After forming a flat layer 204a on the region 2〇2, a resist layer is deposited on the patterned line to partially fill the inscribed line. The process is as follows: <2X0 01B reticle is used in parallel with the process shown in the 〇〇1 a reticle", wherein the 〇〇1B reticle as shown in Fig. 5 forms a flat layer 2 on the active region 202. After 〇4a, it is used to deposit two layers of resist layer in the engraved line to partially fill the inscribed line. As shown in the table, a Cpk value of 0.5 is about 85%, and a Cpk value of 1.9 is close to 1%. Therefore, before the color resist layers 211 and 213 are formed, a relatively flat surface can be formed by partially or completely filling the engraved layer with a resist layer to enhance the subsequent formation of the color filter and the average of the photo sheet. Although two layers of resistive layers are used for deposition using an example, the depth of the lines can be traced and any number of resist layer deposits can be used.

Page 16! 316754 --___ V. DESCRIPTION OF THE INVENTION (11) FIG. 9 is a cross-sectional view showing another embodiment in which the step height of the pad 222 is lowered, and the line is drawn. The step height is also reduced, and the method of cis is shown in Figure 6_9. Referring to FIG. 6, the process CIS begins to form an insulating layer on the substrate 207 to begin to deposit and dope a semiconductor (eg, polysilicon) layer 205, then deposit a bottom of a protective layer 214, and deposit a top metal layer 203 and The pad 222 is made of copper/shoe. The top of the protective layer 2 14 is then deposited while the protective layer 214 is left to expose the pads 222. The step height 2丨8 between the top end of the pad 222 and the top end of the protective layer 2 14 is about 微米5 μm to 2 μm, as emphasized above, when the first flat layer 2〇4a and the second flat layer 204b are joined. If there is no measure to reduce the height of this step, the step height will increase to between 6 microns and 6.5 microns. As shown in FIG. 6, an additional step includes depositing a post-protection pin portion (post_passivati〇n pad p〇rti〇n) 224 on top of the pad 222 for forming a pad structure, including The foot pad 222 and the rear protection pin portion 2 24 have a height higher than the foot pad and the step height is smaller than the foot pad. The material forming the rear protective pin portion 224 is the same as the material of the pin 222, and can be formed using, for example, a sputtering process, a lithography process, or a photoresist etch process. 5微米至6微米。 The thickness of the post-protection pin portion 2 24 and the height of the step to be reduced or removed is about 1. 5 microns to 6 microns. ”

Fig. 7 is a view showing the structure of Fig. 6 after depositing the first flat layer 2? 4a. Preferably, the first flat layer 20 4a is highly sensitive and highly penetrating. In some embodiments, the material of the first planar layer 2, such as a photoresist, is filled with the scribe line 210 as described above, and reference is made to Figure 412 of Figure 4. Preferred B 1316754

Until the cutting step (dicing only the rear protection pin portion 2 2 4 5, the invention description (12) ground] the material 41 2 will remain in the scribe line), it is exposed in the specific embodiment shown in FIG. Preferably, the rear protective pin portion 224 is (accurately) or toward the top end of the flat layer 204a, causing the rear protective pin portion 224:: between the layers 204a to approach the step height. Some yield enhancements; ^: The protective pin portion 224 is reached after two small heights, forming a reduced but non-defective 'degree of 'but' to bring the height of the rear protective pin portion 224 closer to the top of the first layer 204a Can make yields more. In Fig. 7, the height of the guard leg portion 224 is slightly higher than that of the first flat layer 2, and finally has a flat appearance. The structure shown in Fig. 7 is lowered in the colored light. The strip type defect between the resist layers 211 and 213 has a large contribution; in other specific embodiments (not shown in the figure), a protection pin portion 224 is provided and located on the active area 202. The first flat surface 2 has a step height closer to the crucible relative to the pin portion 224, and the flat layer material 412 is not filled in the drawn line 210. Although such a specific embodiment is relative to The structure previously shown in Figure 1C provides a rate of improvement, however, a better yield enhancement can be obtained by filling the flat layer material 41 2 as shown in Figure 7 in the line 210. Figure 8 shows The steps of forming the color filter layers 21 and 213 and the second planar layer 2〇. The material forming the second planar layer 2〇4b is the same as the material of the first planar layer 2〇4, and the second planar layer 204b The color resist layers a 211 and 213 are completely covered. In a preferred embodiment, the second flat layer 2 is also covered. Cover the engraved ’ line so that only the rear protection pin portion 224 is exposed, the final clock

Page 18 1316754 V. DESCRIPTION OF THE INVENTION (13) As shown in Fig. 8, it has a flat top surface which is of great help to the strip defects in the mirror 206. The step between the second flat layer _ top and the rear protective pin portion 224 is higher than the sum of the μ • 8 and the height 119 'the height 119 ' as shown in the first κ: second The height of the flat layer 104b between the top of the flat layer 104b and the foot pad 122, the height of the horse plus (1 · 5 μm to 2 μm), j: the force door she again, the spoon is 4, 5 microns 6.5 microns, as shown . The gates, after summing up to about 6 microns, are shown in Figure 9 after forming the micromirrors 206. Reflowing the micromirror material with a heat. After the brother's application =1. The present invention is shown in a cross-section of a photosensitive coupling element formed according to another embodiment. The present invention has been disclosed in a preferred embodiment as described above, and the present invention is not limited to the invention. Within the scope of this patent, the scope of the patent application is subject to the definition of the patent application. Stay thin

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BRIEF DESCRIPTION OF THE DRAWINGS In order to make the present invention understand, the following detailed description is made as follows: J and other objects, features, and advantages will be more obvious and preferred embodiments, and in conjunction with the drawings, The strip type defect active 1A and 1B shows a plan view of the complex color filter area; the =ic diagram shows the cross section of a conventional image sensor. The active area of the active area is shown in Fig. 2 FIG. 4 is a plan view of a photomask on a substrate; FIG. 4 is an image sensor active region formed by using different masks in a process. FIG. 5 is a plan view showing a photomask used for depositing a photoresist on a color image sensor in FIG. 4; and FIG. 6 to FIG. 9 are diagrams showing a color image sensor. Another embodiment: and FIG. 10 is a schematic view showing the formation of a photosensitive coupling element according to another embodiment. [Simplified Description of Component Symbols] 100 CMOS Image Sensors (CIS) 101 and 201 Filter Regions 102 and 202 Active Regions 103 and 203 Bottom Metal Regions 10 4a and 204a First Flat Layers 104b and 204b Second Flat Layer 106 and 206 microlens layers

Page 20 1316754 Schematic description 107 and 207 substrates 108 and 208 pinch regions 109 and 210 scribe lines 111, 113, 211 and 213 color resist layers 114 and 214 protective layers 118, 119, 218 and 220 height 122 and 222 pad top 200 and 300 color filter elements 224 rear protection pin parts (P〇st-passivati〇n pad portion 212 and 412 resist layer 302 square area 40 0 mask

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Claims (1)

1316754 VI. Scope of Application - ' 1. A method of forming a color filter on a semiconductor substrate, wherein the substrate has at least one filter region having a plurality of pads, a first flat-tank layer formed on On the substrate, and at least one color resist layer is formed on the first-level layer of the at least one filter region, the method at least comprising: (a) depositing a metal layer on the pads to reduce the a step height; and (b) forming a second planar layer such that the deposited metal layer has a height close to the height of the planar layer. 2. If you apply for a patent range! The method of item wherein step (a) comprises causing # to deposit a metal layer by sputtering. The method of claim 1, wherein the deposited metal layer has a height slightly larger than the flat layer. 4. The method of claim ii, further comprising forming a second planar layer over the color resist layer, the second planar layer having a height slightly greater than the deposited metal layer. 5. A method of forming a color filter on a semiconductor substrate, wherein the substrate has a plurality of scribe lines for forming at least one filter region having a plurality of pads. a pad, at least one color resist layer formed in the at least one filter region on the substrate, the method comprising: Page 22 1316754 (a) depositing a metal layer on the pads to reduce the step height therein. The resist material partially fills the engraved line to reduce the step of drawing the line; and the middle portion forms at least one color resistance The method of claim 5, wherein the resistive layer material is maintained in the method of claim 5, wherein at least one of the group consisting of the deposited metal layer and the edge resist material has a === layer approaching The same height, wherein the flat layer is located on the substrate and the color resist layer 7. The method of claim 6, wherein forming the flat layer and partially filling the line using the resist material is performed in the same step, and The single-tank layer is formed of a barrier material. The method of claim 5, further comprising maintaining the barrier material in the scribe lines after the step (1?) until the cutting process. 9. The method of claim 5, wherein the step (b) & comprises: forming a layer of a barrier material on the substrate; using a mask structure to expose the layer of the barrier material so as not to dissolve The barrier material is retained in the engraved line to reduce the step height: Page 23 1316754 VI. Scope of Application The material of the barrier layer outside the line is removed. A method of manufacturing a semiconductor substrate, the method comprising: at least: _(a) providing a substrate having at least one filter region having a plurality of pads; (b) depositing a metal layer thereon The pad pads are used to reduce the step height therein; (b) forming a flat layer such that the deposited metal layer has a height close to the height of the flat layer; (c) forming at least one color resist layer over the planar layer. 11. The method of claim 10, wherein the step (b) comprises depositing a metal layer using a sputtering method. 1 2. The method of claim 10, wherein the deposited metal layer has a height that is slightly greater than a flat layer. 1 3. The method of claim 10, further comprising forming a second planar layer over the color resist layer, the second planar layer having a height slightly greater than the deposited metal layer. 1 4. The method of claim 10, wherein the substrate has a plurality of engraved lines arranged around the at least one filter region, the method further comprising at least partially filling the material using the planar layer. Some lines are drawn. Page 24 1316754 VI. Application for Patent Scope 15. The method of claim 1, wherein the scribe lines are at least partially filled in step (c). The method of claim 10, wherein the substrate has a plurality of scribe lines arranged around the at least one filter region, the method further comprising using a resist material to at least partially fill the characterizations line. 1 7. The method described in claim 16 of the patent application is further included in step (d) The barrier material is then held in the scribe lines until the color grading sheet is cut. < 18. A color filter structure, the structure comprising: at least one substrate having at least one filter region, wherein the filter region has a plurality of conductor pad structures; a flat layer is on the substrate, The pad structure has a height close to the height of the flat layer; and at least one color resist layer is formed over the flat layer in the at least one filter region. The color filter structure of claim 18, wherein: the substrate has a plurality of patterned lines arranged to form the at least one filter region 'a resistive layer material to be used to at least partially fill the Some lines are drawn to bury these 1316754 VI. Scope of Patent Application The step height of the line is drawn, and at least one of the groups formed by the pad structure and the barrier material has a height that is close to the height of the flat layer. The color filter structure of claim 19, wherein the flat layer is formed of a barrier material. 2 1. The color filter structure of claim 19, wherein the pad structure has a height slightly larger than the flat layer. 2. The color filter structure of claim 18, further comprising a second planar layer above the color resist layer, the second planar layer having a slightly larger pad structure The height. Page 26