TW200946427A - Semiconductor die pickup device and pickup metho - Google Patents
Semiconductor die pickup device and pickup metho Download PDFInfo
- Publication number
- TW200946427A TW200946427A TW97136280A TW97136280A TW200946427A TW 200946427 A TW200946427 A TW 200946427A TW 97136280 A TW97136280 A TW 97136280A TW 97136280 A TW97136280 A TW 97136280A TW 200946427 A TW200946427 A TW 200946427A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor die
- cover
- suction opening
- picked
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 274
- 239000013078 crystal Substances 0.000 claims description 43
- 239000004020 conductor Substances 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 53
- 230000000694 effects Effects 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008121460A JP4198745B1 (ja) | 2008-05-07 | 2008-05-07 | 半導体ダイのピックアップ装置及びピックアップ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200946427A true TW200946427A (en) | 2009-11-16 |
| TWI353957B TWI353957B (OSRAM) | 2011-12-11 |
Family
ID=40239520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97136280A TW200946427A (en) | 2008-05-07 | 2008-09-22 | Semiconductor die pickup device and pickup metho |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4198745B1 (OSRAM) |
| KR (1) | KR20110014569A (OSRAM) |
| TW (1) | TW200946427A (OSRAM) |
| WO (1) | WO2009136450A1 (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475606B (zh) * | 2011-02-28 | 2015-03-01 | 晟碟半導體（上海）有限公司 | 非均勻真空分佈晶粒附著尖端 |
| TWI485786B (zh) * | 2012-04-16 | 2015-05-21 | Gallant Micro Machining Co Ltd | Grain Stripping Method and Device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG163493A1 (en) | 2009-01-22 | 2010-08-30 | Esec Ag | Die ejector |
| JP4397429B1 (ja) | 2009-03-05 | 2010-01-13 | 株式会社新川 | 半導体ダイのピックアップ装置及びピックアップ方法 |
| CN108962807B (zh) * | 2018-09-07 | 2024-08-30 | 先进光电器材（深圳）有限公司 | 自动抓取机构 |
| CN113109357B (zh) * | 2021-04-09 | 2021-11-23 | 徐州盛科半导体科技有限公司 | 一种可拆卸的半导体分析装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003264203A (ja) * | 2002-03-11 | 2003-09-19 | Hitachi Ltd | 半導体装置の製造方法 |
| JP4457715B2 (ja) * | 2003-04-10 | 2010-04-28 | パナソニック株式会社 | チップのピックアップ装置およびピックアップ方法 |
| JP3999744B2 (ja) * | 2004-01-05 | 2007-10-31 | 芝浦メカトロニクス株式会社 | 半導体チップのピックアップ装置 |
-
2008
- 2008-05-07 JP JP2008121460A patent/JP4198745B1/ja not_active Expired - Fee Related
- 2008-06-26 WO PCT/JP2008/061610 patent/WO2009136450A1/ja not_active Ceased
- 2008-06-26 KR KR1020107023438A patent/KR20110014569A/ko not_active Withdrawn
- 2008-09-22 TW TW97136280A patent/TW200946427A/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475606B (zh) * | 2011-02-28 | 2015-03-01 | 晟碟半導體（上海）有限公司 | 非均勻真空分佈晶粒附著尖端 |
| US9038264B2 (en) | 2011-02-28 | 2015-05-26 | Sandisk Semiconductor (Shanghai) Co., Ltd. | Non-uniform vacuum profile die attach tip |
| TWI485786B (zh) * | 2012-04-16 | 2015-05-21 | Gallant Micro Machining Co Ltd | Grain Stripping Method and Device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110014569A (ko) | 2011-02-11 |
| JP2009272430A (ja) | 2009-11-19 |
| JP4198745B1 (ja) | 2008-12-17 |
| WO2009136450A1 (ja) | 2009-11-12 |
| TWI353957B (OSRAM) | 2011-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |