TW200946427A - Semiconductor die pickup device and pickup metho - Google Patents

Semiconductor die pickup device and pickup metho Download PDF

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Publication number
TW200946427A
TW200946427A TW97136280A TW97136280A TW200946427A TW 200946427 A TW200946427 A TW 200946427A TW 97136280 A TW97136280 A TW 97136280A TW 97136280 A TW97136280 A TW 97136280A TW 200946427 A TW200946427 A TW 200946427A
Authority
TW
Taiwan
Prior art keywords
semiconductor die
cover
suction opening
picked
semiconductor
Prior art date
Application number
TW97136280A
Other languages
Chinese (zh)
Other versions
TWI353957B (en
Inventor
Okito Umehara
Shinichi Sasaki
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Publication of TW200946427A publication Critical patent/TW200946427A/en
Application granted granted Critical
Publication of TWI353957B publication Critical patent/TWI353957B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor die pickup device comprises a stage (20) comprising an adhesion surface (22) which is adhered to a holding sheet (12), a suction opening provided in the adhesion surface (22), a lid which is slid along the adhesion surface (22) and which opens and closes the suction opening, and a collet (18) for adsorbing a semiconductor die (15). When the semiconductor die (15) is picked up, the leading end (23a) of the lid is allowed to be advanced from the adhesion surface (22), the holding sheet (12) and the semiconductor die (15) are pushed up, the lid is slid, the suction opening is sequentially opened, the holding sheet (12) is allowed to be sequentially suctioned by the opened suction opening, the holding sheet (12) is sequentially peeled off from the semiconductor die (15), the semiconductor die (15) is allowed to be sequentially adsorbed by the collet (18) waiting immediately above the semiconductor die (15), and the semiconductor die (15) is picked up. Thus, it is possible to easily pick up the semiconductor die, suppressing force applied to the semiconductor die when the holding sheet is peeled off.

Description

I 200946427 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體晶粒之拾取裝置之構造及拾取方 法。 【先前技術】 半v體晶粒係將6对或8对大小之晶圓切割成既定大 小，加以製造。切割時’為防止所切割之半導體晶粒散落， H *背面貼付黏貼性之保持膠帶，藉由㈣料從表面側切 斷晶圓。此時，貼付於背面之保持膠帶雖被少許切入，但 不切斷而成為保持各半導體晶粒之狀態。接著，被切斷之 各半導體晶粒係從保持膠帶逐個被拾取，然後送到晶粒焊 接等其後之步驟。 以往，作為從黏貼性之保持片拾取半導體晶粒之方 法’大多使用頂針之方法（例如參照專利文獻1之圖15)。 此係在以筒夹（ec)llet)吸引半導體晶粒之狀態，從施有向周 圍之拉伸力之保持片下侧，藉由頂針頂起半導體晶粒之中 央，藉由施加於保持片之拉伸力，從半導體晶粒剝離黏貼 性之保持片，用筒失拾取半導體晶粒之方法。 一 ^而，此藉由頂針之方法，若半導體晶粒厚度變薄， "、會有因頂起而使半導體晶粒破裂之問題，近年來，使用 於薄型半導體晶粒之拾取步驟變得困難起來。 因此，有提案不使用頂針而從黏貼性之保持片分離及 拾取半導體晶粒之方法。例如，專利文獻】中有提案在具 6 200946427 備複數㈣孔之載台之吸引孔上搭載欲拾取之半導體曰 粒，在使該半導體晶粒被吸引保持於筒失之狀態下，使： 引孔成真&，將保持片吸入各吸亏丨孔令使其變形從 體晶粒剝離與吸引孔對應部分之保持片後，使載二水平移 動或轉動’藉此從半導體晶粒剝離未剝離而殘留部分之保 持片的方法（參照專利文獻1之圖丨〜圖4)。 又，專利文獻丨h有提“載台表面設置較欲拾取 之+導體晶粒之寬度為窄之突㈣’ ^突出部周邊之載么 表面設置吸引孔，當拾取半導體晶粒時，在突出部上以: 突出部露出之方式搭載欲拾取之半導體晶纟，藉由筒夹進 行吸附保肖’用吸引孔將保持片真空吸引至下方，且從半 導體晶粒剝離從突出部分露出部分之保持片，然後，使仍 以筒夾吸附半導體晶粒之突出部相對於載台表面水平移 動’以剝離半導體晶粒其餘部分之保持片之方法（參照專利 文獻1之圖9〜圖1〇)。 專利文獻1 :曰本專利第3209736號說明書 【發明内容】 專利文獻1所揭示之方法，雖係使吸引孔形成真空， 將保持片吸入吸引孔’然後從半導體晶粒剝離保持片之方 法，但保持片從半導體晶粒剝離後，由於 面：因此將位於吸引孔上方近處之保持片加以剝離後= 、從吸弓丨孔周圍部分吸入空氣。因此，雖能藉由吸引將位 ;吸引孔上方近處之保持片加以剝離，但吸引孔周圍之部 200946427 刀：藉由吸引孔之真空吸引加以剝離，而與半導體晶粒 黏貼之狀態殘留下來（參照專利文獻i之圖i、圖2)。另— ❹ ❿ 方面，當使載台移動以進行此未剝離部分之保持片之分離 時’，殘留部分面積越少施加於半導體晶粒之力越少，能抑 =半：體晶粒之損壞。然而，若想減少吸引孔之未剝離部 刀就必須使吸引孔為符合拾取之半導體大小之大型孔。 因此’若藉由大的吸引孔一次吸引保持片，當保持片之黏 力大時有時會對半導體晶粒施加大力。尤其是由於近 年來之半導體晶粒變薄，強度變低，因此有時會因該大力 而產生破裂或變形。因&，專利文獻所揭示之方法，若使 用大的吸引孔，當吸引時，會對半導體晶粒施加大力，若 】的吸引孔’當載台移動時，會對半導體晶粒施加大 力’因此當剝離保持片時，無法抑制施加於半導體晶粒之 力，產生有時招致半導體晶粒損壞之問題。 又，揭示於專利文獻！之另一方法，使僅配置於突出 #周邊之小的吸引孔形成真$，藉此將從突出部露出之部 T之半導體晶粒之保持片加以㈣，由於藉由施加於保持 片之拉伸力進行其餘部分之半導體晶粒之保持片之剝離， 因此為確實進行保持片之剝離，必須加高突出部高度，♦ 突出部之移動方向有鄰接之半導體晶粒時由於有時心 2撞上該半導體晶粒而損壞半導體晶粒，因此突出部高 度党限制’有無法確實剝離保持片之問題。 因此’本發明之目的在於’在半導體晶粒之拾取裝置 中’當剝離保持片B夺，能抑制施加於半導體晶粒的力並容 8 200946427 易拾取半導體晶粒。 本發明之半導體晶粒之拾取裝置， 持薄板之半導體晶纟，其特徵在於，.：取貼付於保 於與貼付有保持片之半導體晶粒面之;:之=含緊貼 Bl. -I- 貼面；設於 及引開口；蓋，設於載台，以使關閉吸引開口之 側之則端能從緊貼面自由前進，、沿緊貼面滑 開口；以及用以吸附半導體晶粒之筒《。當：”及引 Ο ❹ 粒時’使蓋前端從緊貼面前進，邊頂起保持；與半= ==動而依序開啟吸引開口 ’依序-引保持片於Li 啟之及引開口，從拾取之半導體日％粒依序剝離保持片並 且將半導體g粒依序吸附至在欲拾取之半導體 近處待機之筒夾。 本發明之半導體晶粒之拾取裝置中，可為吸引開口與 拾取之半導體晶粒大致同—寬度且從載台内周側向外周側 直線狀延伸，蓋係與吸引開〇寬度大致同_冑度，具有縱 槽，設置於蓋前端接觸側之吸引開口之角部，從吸引開口 側面向吸引開口寬度方向突出，且從緊貼面向載台内^延 伸，用以吸引保持薄板。本發明之半導體晶粒之拾取裝置 中，具備滑件，安裝有於吸引開口寬度方向延伸之銷，較 佳係藉由設於載台内部之滑件驅動機構，於吸引開口之延 伸方向滑動，並且相對於緊貼面進退，蓋備有從前端往關 閉吸引開口之側外伸的臂，透過該臂能自由轉動地安裝於 滑件之銷。又，較佳係備有滑動用槽，從緊貼面凹陷蓋之 厚度’與蓋大致同一寬度，且從蓋開啟侧之吸引開口端向 9 200946427 = Γ伸’當蓋滑動時’蓋後端即蓋開啟侧端或與 頁起保持片之面反面邊與其表面接 、 較佳Γ當使蓋前端從緊貼面前進時，蓋二 從蓋則端侧向後端侧向下傾斜。 、 ’、 在本發明之半導體晶粒之拾取裝置中，較佳係 ㈣凸向關閉吸引開口側之曲面，頂起蓋前端之吸引開： 端面備有沿蓋前端曲面之曲面。 ❹ 在本發明之半導體晶粒之拾取裝置中，較佳係一拾 粒時，將拾取之半導體晶粒之一端對準關閉狀 二使蓋之寬度方向位置與半導體晶粒之寬度方 蓋滑動而依序導體晶粒之一端側向另-端側使 月動而依序開啟吸引開口，從拾取半導體晶粒之—端側 向另一端側依序吸引保持片至開啟之吸引開口，從拾取之 +導體晶粒依序剝離保持片，並a從—端側向另—端側依 半導體晶粒至在拾取之半導體晶粒之上方近處待機 本發明之半導體晶粒之拾取方法，用半導體晶粒之拾 取裝置來拾取貼付於保持片之半導體晶粒；該半導體晶粒 之拾取裝置具備：載台，含緊貼於與貼付有拾取之半導體 晶粒之保持薄板之貼付有半導體晶粒面之反面之緊貼面,· 設於緊貼面之吸引開口；蓋，設於載台，以使關閉吸引開 口之側之前端能從緊貼面自由前進，沿緊貼面滑動用以開 閉吸引開α;以及用以吸附半導體晶粒之筒夾；其特徵在 於’具有：對準步輝’將拾取之半導體晶粒之-端對準關 200946427 閉狀態之蓋前端，使蓋 κ盈·^覓度方向位置與 度方向位置—致丨、導體晶粒之寬 邊頂起伴牲H ， 步驟’使蓋前端從緊貼面前進， 起保持片與半導體晶粒 向另-端側使蓋滑勤而“ 導體晶粒-端側 丨使“動而依序開啟吸引開口， 體曰曰粒-端側向另一端 牛導 口，從拾取之*心1保持片至開啟之吸引開 ..^ +導體晶粒依序剝離保持片，並且從一端側 向另一端側依序吸附半導體晶粒至在拾取粒 上方近處待機夕铭+ 导體日日粒之 子機之涛夾，以拾取半導體晶粒。 本發明在半導體晶粒之拾取裝置中 時’能達到抑制施加於半離保持片 晶粒之效果。 +導體S曰粒之力並容易拾取半導體 【實施方式】 之較佳實施形態。在說明 ’先說明晶圓與晶圓保持 以下，參照圖式說明本發明 本發明半導體晶粒之拾取裝置前 具。 如圖1所不’晶圓11於背面貼付有黏貼性之保持片 12 ’保持片12係安裝於金屬製的環13。晶圓U係如此透 過保持片12,以安裝於金屬製的環13之狀態加以處理。接 著’如圖2所示’晶圓u係在切斷步驟，被切割鋸等從表 面側切斷而形成各半導體晶纟15。在各半導體晶粒15之 間，形成切割時所切出之切入間隙14。切入間隙14之深度 雖從半導體晶粒15到達保持片12之一部分，但保持片= 不被切斷，各半導體晶粒15係被保持片12保持。 200946427 因此，安裝有保持片12與環13之半 圖3所示安裝於a面7 〒艰日日粒15係如 戒於日日圓保持具1〇。晶圓保持具1〇目7 緣部之圓環狀播張 具備具有凸 擴張環16與將環13固定於擴張 上之環壓板17。環厭4 . 擴張環16之凸緣 壓板17係受未圖示之環壓把 擴張…凸緣進退之方向驅動。擴張環壓丨:驅動部朝向 置有半導體晶粒15 之内徑較配 度，凸緣位於擴張環1:圓：為大，擴張環16備有既定厚 :從保…離開之方向之端面側…；出之：式安裝 持片12側之外周為在 擴張環16之保 平穩拉伸保持片12面構*於擴張環16時，能 藉由未圖示之晶圓伴面構成。又’晶圓保持具10係可 之方向移動。持具水平方向驅動部沿保持…面 如圖3(b)料，貼付有半導 设定於擴張環W前成為大致平面狀態。之保持片12在 圖4係表示半導體晶粒之拾 ❹ 圖4係表示將貼付於保 之構成圖，又 導體晶粒之拾取裝置lnn +導體晶粒15設定於半 降至…二::之狀態。此狀態下，板”下 德银傅 裒挾於與擴張環16之凸緣之^ 擴張環16之接觸保持片 凸緣之間。由於 因此只要環13被頂到㈣ 凸緣面之間有段差， ^凸緣面，即代表俘拍：y ^ 上部之曲面被拉伸擴張環 ’、、片12沁擴張環 量。a屮. 上面與凸緣面之段差部八士 篁因此，在固定於擴張環差^刀之 12之中心向周圍之拉伸力作用：保持片12有從保持片 片12延長，因此貼付於伴持y。，由於此拉伸力使保持 保持片12上之各半導體晶粒15間 12 200946427 «τ 之間隙擴大。 在晶圓保持具10上安 保持具10移動之晶圓俾技 >α保持片12的面使晶圓 -水… 持具水平方向驅動部72。晶圓佯持 ，、水千方向驅動部72,例：持 輪，將晶圓保持具1G朝水平方之馬達與齒 外部之馬達等動者，亦可藉由設置於 向移動去 保持具1G沿導件於灯方 :移動者。又，在晶圓保持具1〇之上部I 200946427 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a construction and pickup method of a semiconductor die pick-up device. [Prior Art] A semi-v-body grain system is manufactured by cutting a 6-pair or 8-pair wafer into a predetermined size. In order to prevent the diced semiconductor crystal grains from being scattered during the cutting, the H* back-adhesive retention tape is used to cut the wafer from the surface side by (4). At this time, the holding tape attached to the back surface is cut in a small amount, but the state in which the respective semiconductor crystal grains are held is not cut. Next, each of the cut semiconductor dies is picked up one by one from the holding tape, and then sent to the subsequent step of grain bonding or the like. In the past, a method of picking up a semiconductor crystal grain from a tacky holding sheet has been conventionally used (for example, see Fig. 15 of Patent Document 1). In the state in which the semiconductor die is attracted by the collet (ec), from the lower side of the holding piece to which the tensile force is applied to the periphery, the center of the semiconductor die is lifted by the thimble, and is applied to the holding piece. The tensile force, the adhesive sheet is peeled off from the semiconductor crystal grains, and the semiconductor crystal grains are picked up by the cylinder. In the case of the thimble method, if the thickness of the semiconductor crystal grain is thinned, there is a problem that the semiconductor crystal grain is broken due to the jacking. In recent years, the picking step for the thin semiconductor die has become Difficult to get up. Therefore, there has been proposed a method of separating and picking up semiconductor dies from an adhesive holding sheet without using a thimble. For example, in the patent document, it is proposed to mount a semiconductor ruthenium to be picked up on a suction hole of a stage having a number of holes of four 200946427, and to hold the semiconductor die in a state where the semiconductor die is attracted and held by the cylinder, Kong Chengzhen &, the holding piece is sucked into each of the suction holes to deform the film from the body grain and the holding piece corresponding to the suction hole, and then the carrier 2 is horizontally moved or rotated 'by thereby peeling off from the semiconductor die and not peeling off A method of holding a sheet in a residual portion (refer to Fig. 4 to Fig. 4 of Patent Document 1). Moreover, the patent document 丨h mentions that "the surface of the stage is set to be smaller than the width of the conductor die to be picked up (4)" ^The periphery of the protrusion is provided with a suction hole on the surface, and when the semiconductor die is picked up, it is protruded In the upper part, the semiconductor wafer to be picked up is mounted in a manner in which the protruding portion is exposed, and the holding sheet is vacuum-sucked to the lower side by the suction hole, and the semiconductor film is peeled off from the exposed portion of the protruding portion. Then, a method of peeling the projection of the semiconductor crystal grain by the collet with respect to the surface of the stage to peel off the remaining piece of the semiconductor die (refer to FIG. 9 to FIG. 1 of Patent Document 1). Patent Document 1: Japanese Patent Publication No. 3209736. SUMMARY OF THE INVENTION The method disclosed in Patent Document 1 is a method in which a suction hole is formed into a vacuum, and a holding piece is sucked into a suction hole and then the holding piece is peeled off from the semiconductor die. After the holding piece is peeled off from the semiconductor die, due to the surface: the holding piece located near the suction hole is peeled off, and air is taken in from the periphery of the suction hole. Therefore, the holding piece near the suction hole can be peeled off by suction, but the portion around the suction hole 200946427 knife: peeled by vacuum suction of the suction hole, and the state adhered to the semiconductor die remains. (Refer to Fig. i and Fig. 2 of Patent Document i.) In the other aspect, when the stage is moved to perform separation of the unreleased portion of the holding piece, the less the residual portion area is applied to the force of the semiconductor die. The less, the lower half: the damage of the body grain. However, if you want to reduce the unpeeled part of the suction hole, you must make the suction hole a large hole that fits the size of the picked semiconductor. Therefore, if you use a large suction hole When the holding sheet is attracted once, the semiconductor crystal grains are sometimes strongly applied when the adhesive force of the holding sheet is large. In particular, since the semiconductor crystal grains are thinned in recent years and the strength is low, cracks may sometimes occur due to the force. According to the method disclosed in the patent document, if a large suction hole is used, when attracting, a strong force is applied to the semiconductor crystal grain, and if the suction hole 'is moved when the stage moves, it will be half. The bulk crystal grains are strongly applied. Therefore, when the holding sheet is peeled off, the force applied to the semiconductor crystal grains cannot be suppressed, and there is a problem that the semiconductor crystal grains are sometimes damaged. Further, another method disclosed in the patent document is to be disposed only in the method. The small attracting hole of the protrusion # is formed into a true cost, whereby the holding piece of the semiconductor die of the portion T exposed from the protruding portion is given (4), and the remaining portion of the semiconductor die is performed by the tensile force applied to the holding piece. Since the peeling of the sheet is maintained, it is necessary to increase the height of the protruding portion for the peeling of the holding sheet. ♦ When the moving direction of the protruding portion has an adjacent semiconductor crystal grain, the semiconductor crystal is damaged by the collision of the semiconductor crystal with the core 2 The granules, therefore, the height of the protrusions are limited to the fact that there is a problem that the holding sheets cannot be peeled off. Therefore, the object of the present invention is to 'in the semiconductor wafer pick-up device', when peeling the holding sheet B, it is possible to suppress application to the semiconductor crystal grains. Force and capacity 8 200946427 Easy to pick up semiconductor die. The semiconductor wafer pick-up device of the present invention, the semiconductor wafer of the thin plate, is characterized in that: the adhesive is applied to the surface of the semiconductor die which is secured and attached with the holding piece; the = is tightly attached to Bl. -I- a veneer; disposed at the opening; the cover is disposed on the stage such that the end closing the side of the suction opening is free to advance from the abutting surface, sliding the opening along the abutting surface; and for adsorbing the semiconductor die cylinder". When: “and Ο ❹ 粒 ' ' 使 使 使 使 使 使 使 使 使 使 使 使 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖The semiconductor wafers are sequentially peeled off from the picked semiconductor particles, and the semiconductor g particles are sequentially adsorbed to the collet which is in standby near the semiconductor to be picked up. In the semiconductor wafer pick-up device of the present invention, the suction opening and the opening may be The semiconductor die picked up has a substantially same width and extends linearly from the inner peripheral side to the outer peripheral side of the stage, and the cover is substantially the same as the width of the suction opening, and has a longitudinal groove, and is provided at the suction opening of the contact side of the front end of the cover. The corner portion protrudes from the side of the suction opening toward the width of the suction opening, and extends from the abutting surface toward the stage for attracting and holding the thin plate. The semiconductor wafer pick-up device of the present invention includes a slider and is attached to the suction. Preferably, the pin extending in the width direction of the opening is slid in the extending direction of the suction opening by the slider driving mechanism provided in the inside of the stage, and is advanced and retracted from the front end to the closing direction. The outwardly extending arm is rotatably mounted to the pin of the slider through the arm. Further, it is preferably provided with a sliding groove, and the thickness of the recessed cover from the abutting surface is substantially the same width as the cover, and the cover is The opening end of the opening side is 9 200946427 = Γ When the cover is sliding, the back end of the cover is the open side of the cover or the surface opposite to the surface of the sheet holding piece is connected to the surface thereof, preferably when the front end of the cover is closely attached When the surface advances, the cover 2 is inclined downward from the end side to the rear end side of the cover. In the semiconductor device pick-up device of the present invention, it is preferable that the cover (4) is convexly closed to close the curved surface of the suction opening side, and the front end of the cover is raised. The attraction is opened: the end surface is provided with a curved surface along the front surface of the cover. ❹ In the pick-up device for the semiconductor die of the present invention, it is preferable to pick up one of the semiconductor dies to be closed when the pick-up is performed. The position in the width direction and the width of the semiconductor die slide, and one end side of the sequential conductor die is laterally moved toward the other end side to sequentially open the suction opening, from the end side to the other end side of the semiconductor chip. Succeed in attracting the film to the opening Opening, sequentially picking up the holding piece from the picked + conductor die, and a from the end side to the other end side, depending on the semiconductor die to near the picked semiconductor die, standby of the semiconductor die of the present invention a method of picking up a semiconductor die attached to a holding chip by using a semiconductor die pick-up device; the semiconductor die pick-up device comprising: a carrier comprising a sticker attached to a holding sheet attached to the picked-up semiconductor die a contact surface on the opposite side of the semiconductor die face, a suction opening provided on the abutting surface; a cover disposed on the stage so that the front end of the side closing the suction opening can freely advance from the abutting surface and slide along the abutting surface a collet for opening and closing the attracting opening; and a collet for adsorbing the semiconductor die; characterized in that 'having: aligning step illuminating' aligns the end of the picked semiconductor die with the front end of the closed state of the closed state of 200946427, so that the cover The position of the κ Ying·^觅 direction and the position of the directional direction—the 宽, the wide side of the conductor dies are lifted up with the H, and the step 'the front end of the cover is advanced from the close surface, and the holding piece and the semiconductor die are turned to the other end. The side makes the cover slide “Conductor grain-end side 丨 makes “moving and sequentially opening the suction opening, body - grain-end side to the other end of the cattle guide port, from the picking of the * heart 1 holding piece to open the suction open.. ^ + conductor The crystal grains are sequentially peeled off from the holding sheet, and the semiconductor crystal grains are sequentially adsorbed from one end side to the other end side to be placed in the vicinity of the pick-up grain, and the semiconductor wafer is picked up. The present invention can achieve the effect of suppressing application to the semi-detached holding die in the semiconductor wafer pick-up apparatus. + Conductor S is the force of the grain and is easy to pick up the semiconductor. [Embodiment] A preferred embodiment. DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, a semiconductor wafer pick-up device front-end of the present invention will be described with reference to the drawings. As shown in Fig. 1, the wafer 11 is adhered to the back surface of the holding sheet 12'. The holding sheet 12 is attached to the metal ring 13. The wafer U is thus passed through the holding sheet 12 and is processed in a state of being attached to the metal ring 13. Then, as shown in Fig. 2, the wafer u is cut in the cutting step, and is cut by a dicing saw or the like from the surface side to form each of the semiconductor wafers 15. Between each of the semiconductor crystal grains 15, a cut-in gap 14 cut at the time of cutting is formed. The depth of the cut-in gap 14 is from the semiconductor die 15 to a portion of the holding sheet 12, but the holding sheet = not cut, and the semiconductor wafers 15 are held by the holding sheets 12. 200946427 Therefore, the half of the holding piece 12 and the ring 13 are attached. The mounting of the holding piece 12 and the ring 13 as shown in Fig. 3 is as follows. The annular holder of the edge of the wafer holder 1 has a convex expansion ring 16 and a ring pressure plate 17 for fixing the ring 13 to the expansion. Ring ribs 4. Flange of the expansion ring 16 The pressure plate 17 is driven by a ring pressure (not shown) to expand and extend the flange. Expansion ring pressure: the driving portion faces the inner diameter of the semiconductor die 15 with a matching degree, the flange is located at the expansion ring 1: the circle: is large, and the expansion ring 16 is provided with a predetermined thickness: the end face side in the direction away from the protection The outer circumference of the mounting piece 12 is formed by a wafer mating surface (not shown) when the expansion ring 16 is formed in a stable configuration. Further, the wafer holder 10 is movable in the direction of the system. The holding device in the horizontal direction is held along the surface of the holding surface as shown in Fig. 3(b), and the semi-conductive portion is placed in a substantially flat state before the expansion ring W. The holding piece 12 is shown in FIG. 4 as a semiconductor die. FIG. 4 shows a state in which the holding device is attached to the protective structure, and the conductor chip 15n and the conductor die 15 are set to a half-down to two:: . In this state, the plate "under the silver" is in contact with the expansion ring 16 of the flange of the expansion ring 16 to maintain the sheet flange. Therefore, as long as the ring 13 is stepped to the (four) flange surface, there is a step difference. , ^Flange face, which means captive: y ^ The upper surface is stretched and expanded ring', and the piece 12沁 expands the ring. a屮. The upper part of the flange surface is the difference between the eight 篁 篁, therefore, fixed at The stretching force of the center of the expansion ring 12 is applied to the surrounding tensile force: the holding piece 12 is extended from the holding piece 12, and thus is attached to the holding y. The tensile force causes the semiconductors on the holding piece 12 to be held. The die 15 is 12 200946427 «The gap between the τ is enlarged. The wafer holder 10 is held on the wafer holder 10 and the surface of the α holding sheet 12 is wafer-water... The horizontal direction driving portion 72 is held. Wafer holding, water-water direction driving unit 72, for example, holding a wheel, moving the wafer holder 1G to a horizontal motor and a motor outside the tooth, or by moving to the moving holder 1G along the guide on the lamp side: mover. Also, on the top of the wafer holder

粒15吸附移動之筒失… +導體曰曰 半導體晶粒15吸附至吸^ i備有吸附孔19,用以將 裝置口。又，在晶圓伴I: 附孔19係連接於真空 …藉由載台上下=°:下侧設置有… 戟 下方向驅動機構73，相對於保持片12 被驅動於上下方向（進退方 戰上下方向驅動機構73, =藉由設置於内部之馬達與齒輪，於上下方向驅動載 乂0者’亦可藉由設置於外部之馬達等之驅動源，使載台 20沿導件於上下方向移動者。 如圖5所示’載台20具備：圓筒形筐體21，其上面備 有緊貼於保持4 12之緊貼面22;設置於與筐體2i之緊貼 立面22之相反侧之基體部24，·以及驅動部^，安裝於基體 部24’用以驅動安裝於值體21内部之滑件驅動機構遍。 載台20之基體部24係安裝於未圖示之載台固定部。吸引 開口 41係設置於緊貼面22，係與圖4所示之拾取之半導體 晶粒15大致同一寬度，其長度較半導體晶粒15為長，從 載台2〇之内周側向外周侧直線狀延伸。吸引開口 41上安 裝有蓋23，其係與吸引開口 41之寬度大致同—寬度，且沿 13 200946427 吸引開口 41之延伸方向滑動以開閉吸引開口 4i。蓋23之 沿滑動方向關閉蓋吸引開口 41之侧係前端23a，蓋23開啟 侧之端係後端23c。蓋23之側面23b與吸引開口 41之侧面 41b構成滑動面。若吸引開口 41在緊貼面22與欲拾取之半 導體晶粒15大致同一寬度，則亦可構成為於内部設置段 差’於該段差部分設置與載台20連通之狹縫。 如圖6、圖7所示，蓋23之前端23a在關閉吸引開口 41時’被頂至接觸位於吸引開口 41之載台内周側之端面 ® 41a。蓋23之前端23a係凸向關閉吸引開口 41側之曲面， 推動蓋23之前端23a至接觸之吸引開口 41之端面4U備有 沿蓋23之前端23 a之曲面的曲面。曲面可為圓筒面，可為 組合複數半徑之圓筒面者，亦可為以其他形狀之曲面構成。 又，在蓋23之前端23a接觸側之吸引開口 41之兩角部 具有縱槽364，其係從吸引開口 41之侧面41b向吸引開口 41'之寬度方向突出，從緊貼面22向載台2〇之内面朝上下 方向延伸，以吸引保持片丨2。縱槽364係由連接吸引開口 41之大致270度之扇形圓筒面構成，在吸引開口 41之兩角 邰，與各縱槽364之圓筒面接觸之切線5〇〇係向蓋23成為 關閉之方向，較端面41a突出到端面41a成為圓筒面之切線 的位置為止。 如圖7(a)所示，當蓋23為關閉時’由於蓋23之前端 23a與端面41a接觸，因此在蓋23為關閉之狀態下，在蓋 幻、吸弓丨開口 41之兩角部，具有大致27〇度之扇形圓筒面 之縱槽364係連通緊貼面22與筐體21之内部。又，如圖 14 200946427 7(b)所不’备使半導體晶粒15之—#…對準吸引開口 ^ 之端面41&或纟23之前端23a時，半導體晶粒^之一部分 曰從孤23之别端23a露出，大致9〇度扇形之斜線部分係位 於縱槽364之上。 如圖8所示，蓋23在關閉吸引開口 41時，位於保持 片12側之表面係也發目上 ' ❹The granule 15 adsorbs the moving cylinder and loses it... +Conductor 曰曰 The semiconductor crystal grain 15 is adsorbed to the absorbing surface and has an adsorption hole 19 for the device port. Further, in the wafer with I: the attachment hole 19 is connected to the vacuum... by the stage up and down = °: the lower side is provided with the lower side direction drive mechanism 73, and is driven in the vertical direction with respect to the holding piece 12 (forward and backward movement) The up-and-down direction drive mechanism 73, = driving the carrier in the up-and-down direction by the motor and the gear provided inside can also be used to drive the source 20 along the guide in the up-and-down direction by a drive source such as a motor provided outside. As shown in Fig. 5, the stage 20 is provided with a cylindrical casing 21 having a snug surface 22 which is in close contact with the holder 412, and is disposed on the close surface 22 of the casing 2i. The base portion 24 and the driving portion on the opposite side are attached to the base portion 24' for driving the slider driving mechanism attached to the inside of the value body 21. The base portion 24 of the stage 20 is attached to a load (not shown). The fixing opening 41 is disposed on the abutting surface 22 and has substantially the same width as the semiconductor die 15 picked up as shown in FIG. 4, and has a length longer than that of the semiconductor die 15 from the inner circumference of the stage 2 The side extends to the outer peripheral side in a straight line. A cover 23 is attached to the suction opening 41 and is coupled to the suction opening 41. The width is substantially the same as the width, and slides along the extending direction of the 13200946427 suction opening 41 to open and close the suction opening 4i. The cover 23 closes the side front end 23a of the cover suction opening 41 in the sliding direction, and the end end rear end 23c of the opening side of the cover 23 The side surface 23b of the cover 23 and the side surface 41b of the suction opening 41 constitute a sliding surface. If the suction opening 41 has substantially the same width as the semiconductor wafer 15 to be picked up, the suction opening 41 may be configured to have a step inside. The step portion is provided with a slit that communicates with the stage 20. As shown in Figs. 6 and 7, the front end 23a of the cover 23 is 'topped to the end face of the inner peripheral side of the stage on the suction opening 41 when the suction opening 41 is closed. 41a. The front end 23a of the cover 23 is convexly curved to close the side of the suction opening 41, and the front end 23a of the push cover 23 to the end face 4U of the suction opening 41 contacting the surface is provided with a curved surface along the curved surface of the front end 23a of the cover 23. The curved surface may be The cylindrical surface may be a cylindrical surface of a combination of a plurality of radii, or may be formed by a curved surface of another shape. Further, the two corner portions of the suction opening 41 on the contact side of the front end 23a of the cover 23 have longitudinal grooves 364. From the suction opening 41 The side surface 41b protrudes in the width direction of the suction opening 41', and extends from the contact surface 22 toward the inner surface of the stage 2A in the vertical direction to suck and hold the sheet bundle 2. The vertical groove 364 is substantially 270 degrees which is connected to the suction opening 41. The sector-shaped cylindrical surface is formed so that the tangential line 5 which is in contact with the cylindrical surface of each longitudinal groove 364 at both corners of the suction opening 41 is in the direction in which the lid 23 is closed, and protrudes from the end surface 41a to the end surface 41a to become a cylinder. As shown in Fig. 7(a), when the cover 23 is closed, 'because the front end 23a of the cover 23 is in contact with the end surface 41a, the cover 23 is closed, and the cover is closed and the bow is closed. At both corners of the opening 41, a longitudinal groove 364 having a sectoral cylindrical surface of approximately 27 degrees is connected to the inside of the abutting surface 22 and the casing 21. Further, as shown in FIG. 14 200946427 7(b), when the semiconductor die 15 is aligned with the end face 41 of the attracting opening ^ or the front end 23a of the 纟 23, a part of the semiconductor die is 孤 23 The other end 23a is exposed, and the substantially 9-inch sector-shaped diagonal portion is located above the longitudinal groove 364. As shown in Fig. 8, when the cover 23 closes the suction opening 41, the surface on the side of the holding piece 12 is also revealed.

周圍設有倒角部分23e，當蓋23關閉吸引開口 Μ時，在緊 貼面22與蓋23之間形成小的v字形槽。又，如先前所說 明’吸引開口 41之寬度與蓋23之寬度與半導體晶粒。之 寬度均大致相同’吸引開口 41之各側面偽與蓋U之各 側面23b係以能滑動之方式接觸。 如圖5所不，載台2〇備有滑動用槽22a，從緊貼面22 凹陷蓋23之厚度，與蓋23 λ致同一寬度且從蓋23開啟側 之吸引開α 41之端向載台2〇之外周側延伸，當蓋23滑動 時’蓋23之後端23c或與蓋23之保持片側相反之側之面接 觸其表面滑動。 如圖4所示，本實施形態之半導體晶粒之拾取裝置 100，其滑件驅動機構3⑽係設置於載台Μ内部，該滑件 驅動機構300係使安裝有能自由轉動之蓋23之滑件332典 動。滑件驅動機構300具備：第丄連桿〇ink)326，被安裝= 載台20之基體部24之驅動部25於相對於緊貼面η之進 退方向驅動；活塞(pist〇n)370,能自由滑動地安裝於載台 2〇之筐體21，相對於緊貼面進退；止動部（st〇pper)32ia: 設置於筐體21之内部’卡合於活塞37〇之凸緣37ι，用以 15 200946427 制舌塞370相對於緊貼面22之進退方向之動作；彈菁 將第1連# 326與活塞370連接於相對於緊貼面22 進退^方向，導軌331，安裝於活塞370，與緊貼面22大 行朝吸引開π 41之延伸方向延伸；滑件332，能自 滑動地安裝於導軌331 ;以及第2連桿329，藉由銷328 =自由轉動地安裝於活塞37()，用以連接滑件332與第丄連 杯326’在活塞37〇抵接止動部32ι&後將第^連桿似 相對於緊貼面22之進退方向之動作轉換為導軌如沿滑件 332之方向的動作。在滑件332上安襄有於吸引開口 “之 寬度方向延伸之圓筒狀銷33〇,於销33〇有設於從蓋23之 前端…往關閉吸引開口 41之側外伸之臂2 3 f之倒u字形 之缺口能自由轉動地卡合。又’筐體21係連接於真空裝置 71 ’構成為能使内部形成真空。 第2連才干329係藉由設於一端之銷327插入第^連尸 3=之卡合槽326a及設於另一端之卡合槽咖挾入滑: φ 銷33Ga來連接滑件332與第1連桿326。在驅動部 25之内部安裝有用以使滑件驅動機構3⑻動作之 3心在馬達381之旋轉轴安裝有凸輪383，其係與設置於 第1連桿326之軸326b前端之滾輪326c接觸。 如上述，由於滑件驅動機構3〇〇係將朝緊貼面Μ 、3向動作之第i連桿326之動作藉由L字形之第2連桿似 轉換為使滑件332朝緊貼面22平行移動之方向的動作 此能作成小型的構成，能將其機構容納於圓筒 内部。 “驵"之 16 200946427 如圖4所示，半導辦曰. CPU等之電腦之控 晶粒之拾取裴置100備有内部含 71、筒夾…圓:二:::r動部25,裝置 向驅動機構73,驅動邱' °動部72、載台上下方 ❹ ❹ 保持具水平方向驅動二25、真空裝置71、筒夾18及晶圓 照從控制部70所輪72、載台上下方向‘驅動機構73係依 點鏈線係表示連接二^令進仃驅動。此外’圖4中，1 筒夹及晶圓保持工具水^向與:部25、真空裝置7卜 動機構73之訊號線。 冑72、載台上下方向驅 -彳=持=〜圖、12說明利用半導體晶粒之拾取裝置 1圖8斛 〇取半導體晶粒15之動作。關於參昭圖 1〜圖8所說明之部分附加同樣符號，省略說明。參“、、圖 ^ ^ 1 Vr tf 7 °^2 3 ^ ^ ^ ^ ^ τ 吸引開口、 立15之對準步驟。由於蓋23位於關閉 41之端面4之位置’因此蓋23之前端…為與吸引開口 於滑動用槽22 ，蓋23之後端23〇之下面係搭載 槽22a之表面’藉由滑動用槽仏來支撑。又，蓋 4所-面日與緊貼面22係大致同-面。控制部7G係藉由圖 不之晶圓保持具水平方向驅動部72使晶圓保持具⑺於 向曰移動到載台20之待機位置上方為止。接著，控制 ^ 在阳圓保持具10移動到載台20之待機位置上方之既 1 f後’暫時停止晶®保持具1 〇之水平方向之移動，藉 载σ上下方向驅動機構73使載台2〇上升到戴台之緊 點面22與蓋23之表面緊貼於保持片12之下面為止。載台 17 200946427 20之緊貼面22與蓋23 $ I ei· 士人y 兴蛊23之表面緊貼於保持片】2之 控制部I就停止載台20之上升。接著，控制部 麦 由晶圓保持具水平方向驅動部72使拾取之半導體晶粒5 15a對準闕閉狀態之蓋23之前端…，使蓋 度方向位置與半導體晶粒15之寬度方向位置一致，調整半 導體晶粒15之侧面與蓋23 惻面23b —致。由於蓋23之 寬度與欲拾取之半導體晶粒15大致同—寬度，因此，若使 ❹ ”千等體曰曰粒15之侧面一致，就能進行半導體 晶粒之各侧面與蓋23之各侧面咖之對準。此時，保 持片12係受到晶圓保持具1〇之擴張環16之拉伸力。 圖9_載台20之緊貼面22與蓋23之表面的俯視 圖，係用1點鏈線表示搭载於其上之保持片12盥半導體晶 粒15以瞭解其位置關係的圖，目9⑻係為區別大致同一寬 度之半導體晶粒15與蓋23而將蓋23圖示為較半導體晶粒 15猶大。@ 10(b)、圖u(b)、從圖17(b)到圖19⑻均同樣。 ❹ 如圖9(b)所示，只要蓋23與半導體晶粒15之位置一致， 半導體晶粒15之大致9G度之扇形斜線部分就會位於縱槽 364 上。 當載台2G朝保持片12之下面前進，緊貼及半導體晶 粒15之對準結束後，控制部7〇就結束對準步驟。接著， 控制部70將筒夾18移動至欲拾取之半導體晶粒15之上方 近處’與半導體晶粒15保持隔少許間隙之高度。控制部7〇 在筒失18之移動結束後’藉由真空裝置71開始從吸附孔 19吸引空氣，使筒夾18為吸附半導體晶粒15之待機狀態。 18 200946427 如圖10〜圖13所示，控制部70開始保持片制離步驟 控制部70藉由真空裝置71使載台2〇之笸截噼。 心匡遐21之内部 ❹ ❹ 成真空。只要使筐體之内部壓力形成真空，則圖丄形 所示之與筐體21之内部連通之縱槽364亦成真空，將1()沙） 片12吸附於緊貼面22。此時，雖保持片12被真办向保持 引住，但在此狀態下’保持片12仍未從半導體晶：二 離。又，在設置於圖8所示之蓋23之表面之倒角部分^ 與吸引開口 41間之V字形槽，有空氣從载台2〇之外e 向成為真空之縱槽364流動。雖此v字形槽之壓力係較2 氣壓為低的壓力，但以此負壓不能剝離保持片12。” 乂 如圖"（a)所示，只要滑件驅動機構3〇〇之驅動部乃 之馬達381依照控制部70之指令轉動，安裝於馬達38ι之 軸之凸輪383就會轉動。凸㉟383係橢圓形，凸輪面係與 安裝於第1連桿326之軸326b之前端之滾輪326c接觸，只 要朝圖10之箭頭方向轉動，凸輪383之凸輪面就會朝緊^ 面22之方向頂起滚輪326c。藉由此動作使轴32讣上升， 第1連桿326整體向緊貼面22上升。只要第j連桿326整 體上升，藉由彈簧373連接於緊貼面22側之活塞37〇就會 被第1連桿326頂起，使活塞37〇整體向緊貼面22上升。 只要活塞370整體向緊貼面22上升，安裝於緊貼面^側 之導軌331亦與活塞370 一起向緊貼面22上昇。只要導軌 3 3 1上升，女褒為沿導軌3 3〗之上面滑動之滑件3 3 2亦向緊 貼面22上昇。接著，透過臂23f能自由轉動地卡合於滑件 332之蓋23之前端23a係隨著滑件332上升而從緊貼面22 19 200946427 向上方前進》 只要蓋23之前端23a從緊貼面22向上方前進，蓋23 之前端23a就會頂起保持片I〗與半導體晶粒 1 A J ^ 一 端 15a。於是，由於前端23a從保持片12承受向下的力，因在 蓋23以銷330為中心朝順時針方向旋轉。由於蓋23之^ 端23c係靠滑動用槽22a之表面來支撐，且後端2孔之保持 片12側之面與緊貼面22大致為同一面，因此蓋23頂起保 持片12之表面係從蓋23之前端23a側向後端2氕侧向俩 © 斜。 貝 隨著蓋23之前端23a之上升，蓋23把欲拾取之半導體A chamfered portion 23e is provided around, and when the cover 23 closes the suction opening ,, a small v-shaped groove is formed between the abutting surface 22 and the cover 23. Further, as previously described, the width of the opening 41 and the width of the cover 23 and the semiconductor die are shown. The widths are substantially the same. The side faces of the suction opening 41 are slidably contacted with the side faces 23b of the cover U. As shown in Fig. 5, the stage 2 is provided with a sliding groove 22a, and the thickness of the cover 23 from the abutting surface 22 is the same width as the cover 23, and is extended from the end of the opening 41 of the opening side of the cover 23. The outer side of the table 2 is extended, and when the cover 23 is slid, the rear end 23c of the cover 23 or the side opposite to the side of the holding piece of the cover 23 is in contact with the surface. As shown in Fig. 4, in the semiconductor die pick-up device 100 of the present embodiment, the slider driving mechanism 3 (10) is disposed inside the stage, and the slider driving mechanism 300 is provided with the slider 23 which is freely rotatable. Pieces 332 spurs. The slider driving mechanism 300 includes a second link 〇ink 326, and is mounted = the driving portion 25 of the base portion 24 of the stage 20 is driven in the advancing and retracting direction with respect to the abutting surface η; the piston (pist〇n) 370, The housing 21 that can be slidably attached to the stage 2 is advanced and retracted relative to the abutting surface; the stopper (32): is disposed inside the housing 21 and is engaged with the flange 37 of the piston 37〇 The action of the 15 200946427 tongue plug 370 with respect to the advancing and retracting direction 22; the elastic cyanine connects the first joint # 326 and the piston 370 to the direction of the advancing and retracting surface 22, and the guide rail 331 is mounted on the piston 370, the large surface of the abutting surface 22 extends toward the extending direction of the attraction opening π 41; the slider 332 is slidably attached to the guide rail 331; and the second link 329 is rotatably mounted to the piston by the pin 328 37(), for connecting the slider 332 and the second coupling cup 326', after the piston 37A abuts the stopping portion 32 ι & the action of the second connecting rod relative to the advancing and retracting direction of the pressing surface 22 is converted into a guide rail such as The action in the direction of the slider 332. The slider 332 is provided with a cylindrical pin 33 延伸 extending in the width direction of the suction opening, and the pin 33 is provided on the side of the cover 23 from the front end of the cover 23 to the side closing the suction opening 41. The inverted u-shaped notch can be freely rotatably engaged. Further, the casing 21 is connected to the vacuum device 71' so as to form a vacuum inside. The second connector 329 is inserted into the pin 327 provided at one end. The corpse 3=the engagement groove 326a and the engagement groove provided at the other end are slidably: φ pin 33Ga to connect the slider 332 and the first link 326. The inside of the drive unit 25 is installed to make the slider The center of the driving mechanism 3 (8) is mounted with a cam 383 on the rotating shaft of the motor 381, which is in contact with the roller 326c provided at the tip end of the shaft 326b of the first link 326. As described above, since the slider driving mechanism 3 will be The movement of the i-th link 326 in the three-direction operation and the action of the third link 326 in the three-direction operation can be converted into a direction in which the slider 332 is moved in parallel to the contact surface 22, thereby making it possible to form a small-sized structure. It can accommodate its mechanism inside the cylinder. "驵 quot " 16 200946427 As shown in Figure 4, the semi-guided 曰. The CPU of the CPU and the like control chip picking device 100 is provided with an internal 71, a collet... a circle: two::: r moving portion 25, the device is driven to the drive mechanism 73, drives the Qiu '° moving portion 72, and the loading platform ❹ ❹ 保持 水平 水平 水平 水平 、 、 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空仃 drive. Further, in Fig. 4, the 1 collet and the wafer holding tool water are directed to the signal line of the portion 25 and the vacuum device 7 to the mechanism 73.胄72, the upper and lower direction of the stage drive - 彳 = holding = ~ Figure, 12 illustrates the operation of picking up the semiconductor die 15 using the semiconductor die 1 FIG. The same components are attached to the same portions as those described in the first to eighth embodiments, and the description thereof is omitted. Refer to ",, Fig. ^ ^ 1 Vr tf 7 °^2 3 ^ ^ ^ ^ ^ τ to attract the opening and the alignment step of the vertical 15. Since the cover 23 is located at the end face 4 of the closing 41', the front end of the cover 23 is The surface of the underlying mounting groove 22a that is opened to the sliding groove 22 and the rear end 23 of the lid 23 is supported by the sliding groove. Further, the surface of the cover 4 is substantially the same as the surface 22 The control unit 7G controls the wafer holder (7) to move above the standby position of the stage 20 by the wafer holder horizontal direction driving unit 72. Next, the control unit 10 is mounted on the dome holder 10. Moving to the position above the standby position of the stage 20, after 1 f, 'temporarily stops the movement of the crystal holder 1 in the horizontal direction, and the σ vertical direction driving mechanism 73 causes the stage 2 to rise to the tight point of the stage. 22 and the surface of the cover 23 is in close contact with the lower surface of the holding piece 12. The surface of the mounting table 17 200946427 20 and the cover 23 $ I ei· 士人 y Xing 蛊 23 surface is closely attached to the holding piece 】 2 control The portion I stops the rise of the stage 20. Next, the control unit is driven by the wafer holder horizontal direction driving unit 72 to pick up the semiconductor The die 5 15a is aligned with the front end of the cover 23 in the closed state, so that the position in the cover direction coincides with the position in the width direction of the semiconductor die 15, and the side of the semiconductor die 15 is adjusted to coincide with the cover 23 face 23b. The width of 23 is substantially the same as the width of the semiconductor die 15 to be picked up. Therefore, if the sides of the ”" 千" body 15 15 are aligned, the sides of the semiconductor die and the sides of the cover 23 can be made. alignment. At this time, the holding piece 12 is subjected to the tensile force of the expanded ring 16 of the wafer holder. Fig. 9 is a plan view showing the surface of the adhering surface 22 of the stage 20 and the surface of the cover 23, showing the position of the holding piece 12 of the semiconductor wafer 15 mounted thereon by a one-dot chain line, and Fig. 9(8) The cover 23 is illustrated as being larger than the semiconductor die 15 in order to distinguish the semiconductor die 15 and the cover 23 of substantially the same width. @10(b), Figure u(b), and Figure 17(b) to Figure 19(8) are the same. As shown in FIG. 9(b), as long as the cover 23 coincides with the position of the semiconductor die 15, the sector-shaped oblique portion of the semiconductor die 15 of approximately 9G degrees is located on the vertical groove 364. When the stage 2G advances toward the lower side of the holding piece 12, and the alignment of the semiconductor wafer 15 is completed, the control portion 7 ends the alignment step. Next, the control unit 70 moves the collet 18 to a height near the semiconductor die 15 to be picked up, which is spaced apart from the semiconductor die 15 by a slight gap. The control unit 7 吸引 starts to suck air from the adsorption hole 19 by the vacuum device 71 after the movement of the cylinder loss 18 is completed, so that the collet 18 is in a standby state in which the semiconductor die 15 is adsorbed. 18 200946427 As shown in Figs. 10 to 13, the control unit 70 starts to hold the sheet separation step control unit 70 to cut the stage 2 by the vacuum unit 71. Inside the heart 匡遐 21 ❹ ❹ into a vacuum. When the internal pressure of the casing is vacuumed, the longitudinal groove 364 which communicates with the inside of the casing 21 as shown in the figure is also vacuumed, and the 1 () sand piece 12 is adsorbed to the abutting surface 22. At this time, although the holding piece 12 is held by the holding, in this state, the holding piece 12 is still not separated from the semiconductor crystal. Further, in the V-shaped groove provided between the chamfered portion of the surface of the lid 23 shown in Fig. 8 and the suction opening 41, air flows from the outside of the stage 2 to the longitudinal groove 364 which becomes a vacuum. Although the pressure of the V-shaped groove is lower than the pressure of 2 atmospheres, the holding piece 12 cannot be peeled off by this negative pressure. As shown in Fig. 3(a), as long as the motor 381 of the drive unit of the slider drive mechanism 3 is rotated in accordance with the command of the control unit 70, the cam 383 attached to the shaft of the motor 381 is rotated. It is an elliptical shape, and the cam surface is in contact with the roller 326c attached to the front end of the shaft 326b of the first link 326. As long as it is rotated in the direction of the arrow of Fig. 10, the cam surface of the cam 383 is pushed up toward the tight surface 22. The roller 326c raises the shaft 32 by this operation, and the first link 326 as a whole rises toward the abutting surface 22. As long as the j-th link 326 as a whole rises, the piston 37 is connected to the piston 37 on the side of the abutting surface 22 by the spring 373. When the first link 326 is lifted up, the entire piston 37 is raised toward the contact surface 22. As long as the piston 370 as a whole rises toward the abutment surface 22, the guide rail 331 attached to the side of the contact surface is also moved together with the piston 370. The abutting surface 22 is raised. As long as the guide rail 3 3 1 is raised, the female scorpion is also slid along the upper surface of the guide rail 3 3 and also rises toward the abutting surface 22. Then, the transmission arm 23f is rotatably engaged with The front end 23a of the cover 23 of the slider 332 is raised from the abutment surface 22 19 200946427 as the slider 332 rises. As long as the front end 23a of the cover 23 advances upward from the abutting surface 22, the front end 23a of the cover 23 lifts up the holding piece I and the semiconductor die 1 AJ ^ one end 15a. Thus, since the front end 23a is from the holding piece 12 The downward force is applied, and the cover 23 is rotated clockwise around the pin 330. The end 23c of the cover 23 is supported by the surface of the sliding groove 22a, and the rear end 2 hole is held on the side of the holding piece 12 The surface is substantially flush with the abutting surface 22, so that the surface of the lid 23 that lifts the holding piece 12 is inclined from the front end 23a side to the rear end 2 side of the lid 23. The shell rises with the front end 23a of the lid 23, Cover 23 the semiconductor to be picked up

曰B 粒15與保持片12往上頂起。另一方面，位於成為真空 之縱槽364上之半導體晶粒15之兩角部分之保持片^被 吸引固定於緊貼面22。因此藉由蓋23之上升，貼付於欲拾 取之半導體晶粒15之保持片12向緊貼面22被拉向斜下， 藉由此傾斜向下之拉伸力，從位於縱槽364上之半導體晶 粒15之兩角部分開始剝離保持片12，位於縱槽364上之大 致90度之扇形部分之保持片12脫離。接著，隨著蓋23之 前端23a之上升’較蓋23之前端23a露出於緊貼面22之半 導體晶粒15之大致三角形狀部分之保持#12向緊貼面Μ 被拉向斜下，從半導體晶粒15之寬度方向之兩侧向寬度方 向之中心逐漸剝離。 又，依照控制部70之指令，進一步使滑件驅動機構綱 之馬達381轉動，只要藉由與馬達381同時轉動之凸輪 383,進一步使第i連桿326與活塞37〇向緊貼面μ之方 20 200946427 向上升’突出於活塞370外面之凸緣37 設置於筐體21之止動部切…《371之知面就會撞到 動P 321a。於疋，活塞370因止動邱3 而無法相對於緊貼面22_前進 °P321a 之腎目上而”七其 本目孟23之刖端23a 之緊貼面22之前進係在既定位置停止 到既定位置為止，就會 端23a上升 剝離線53。 會一…之曲面形成保持片^之 如圖u所示，由於蓋23隨著蓋23之前端 ❹ ❹ 而㈣，因此蓋23之前端23a較半導體晶粒15之一二 賴向蓋23之滑動方&狡紅 半導體晶粒15之—端Γ稍=離線53係形成於較 鈿5a稍靠蓋23之滑動方向之位置。 所示，半導體晶粒15之保持片12已脱離之部 刀_由保持片12來消除向緊貼面22之吸引力。又，在 從保持片12已脱離之-端…到剝離㈣為止之部分 導體晶粒15與保持片12間引Μ氣，此部分之半導體晶 粒15之保持片12側之面壓力成為大氣壓。另一方面半 導體晶粒15之筒夾18側之面係藉由朝蓋23之前端23a之 亡方之前進而接近筒夾18之吸附面’藉此壓力降低。因此， 半導體aa粒15之保持片12側之面之壓力較筒炎18侧之壓 力為鬲’從保持片12剝離之半導體晶粒15之部分被筒夾 18吸附。由於半導體晶粒15之保持片12側與筒夾18側之 壓力差不太大、及有保持片12所造成之下拉力，因此位於 從半導體晶粒15之剝離線53至蓋23之後端23c侧且保持 片12仍未剝離之部分在半導體晶粒15與筒夾18間殘留若 干間隙，仍未被筒夾18吸附。因此，半導體晶粒15在被 21 200946427 筒夾18錢之部分與未被筒夾18錢之部分間，產 小之弯曲變形。 ❹ ❹ 如圖H)⑷所示，只要蓋23之前端…從緊貼面Μ朝 上方前進，頂起保持片12之侧之表面傾斜，較剝離線53 位於蓋23之後端23c側之蓋23之表面與保持片12之 會產生間隙，較剝離線53位於蓋23之後端23C侧之蓋Μ 之表面壓力就會大致成為大氣壓。又，由於蓋23之倒 分仏之表面壓力成為與蓋23之表面壓力同樣的大氣壓， 因此除了鄰接於前端23a之部分外，倒角部分…之保 12未從半導體晶粒15剝離。因此，剝離線53係如圖1〇(b) 所示’沿蓋23之前端23a，從半導體晶粒15之寬度方向之 側面到側面之延長線，剝離線53未延長到 23b之部分。 < 训曲 如圖^所示，由於蓋23之厚度較離前端^之緊貼 面22之既定前進高度為 吸引…之各一接觸二之又各側面州 23c之下面心 接觸之狀態，又，蓋23之後端 …係與滑動用槽A之表面接觸。且，在縱槽3“ 之上覆蓋有從半導體晶粒15 - 幾丰、、5右* 和雕及俅将片12»因此，由於 斜沒有…筐體21之外部向筐體 此簠體21之内部保持真空。 之内U，因 又’由於滑件驅動機構300之彈f 面22頂起蓋J具有以從緊貼 因此即使蓋23tr23a之程度幾乎不^程度之強度， 為止，活塞370: 禮緊貼面22頂起到既定前進高度 Μ與第1連桿326間之距離亦幾乎不變化。 22 Φ ❹ 200946427 因此，藉由第I. 連# 326之上升使蓋23僅從緊貼面22 * 出而未滑動。 犬 々圖12(a)所示，只要依照控制部7〇之指令進一步说 件驅動機構300之凸輪383轉動，使第1連桿326向緊貼 面22頂起，無法向緊貼面22移動之活塞谓與第 326間之彈簧373就會藉由馬達韻與凸輪383，於相對: 緊貼面22進退之方向開始壓縮。只要彈簧373受壓縮，活 j 370就不對緊貼面22前進，僅第！連桿咖對緊貼面u 刖進因此，活塞370之銷328未對緊貼面22上升，僅位 於第1連才于326之卡合槽326a内之第2連桿329之銷⑵ 朝緊貼面22之方向上升。於是，第2連桿329以銷328為 中心開始轉動。藉由此轉動動作，第2連桿329之另一端 之卡口槽329a向載台2〇之外周側移動，透過臂23f而能自 由轉動地卡合在固定有位於卡合槽32如内之銷33〇&之滑件 332與滑件332之銷33G之蓋23向載台20之外周侧開始滑 動。 如圖_所示，只要蓋23滑動，蓋23之前m沈 會從吸引開口 41之端面41a離開，吸引開口 41開啟，形成 與欲拾取之半導體晶粒15大致同_寬度之開口開啟部^。 由於載台20之筐體21之内部藉由真空裝置7ι形成真办狀 態，因此開口開啟部42將保持片12吸引至其中。接；， 隨著蓋23之滑動，保持片12被吸入開口開啟部42中而從 半導體晶粒15剝離。由於半導體晶粒15與保持片12門之 剝離線53為沿蓋23之㈣…之曲線形狀，因此從緊二面 23 200946427 ❹The 曰B grain 15 and the holding piece 12 are lifted up. On the other hand, the holding sheets of the two corner portions of the semiconductor die 15 on the longitudinal grooves 364 which become the vacuum are attracted and fixed to the adhering surface 22. Therefore, by the rise of the cover 23, the holding piece 12 attached to the semiconductor die 15 to be picked up is pulled downward obliquely to the abutting surface 22, whereby the downward tensile force is applied from the longitudinal groove 364. The two corner portions of the semiconductor die 15 begin to peel off the holding piece 12, and the holding piece 12 of the substantially 90-degree sector portion located on the vertical groove 364 is detached. Then, as the front end 23a of the cover 23 rises, the holding portion #12 of the substantially triangular shaped portion of the semiconductor die 15 exposed from the front end 23a of the cover 23 to the contact surface 22 is pulled downward obliquely from the close surface Both sides of the semiconductor crystal grain 15 in the width direction are gradually peeled off toward the center in the width direction. Further, in accordance with an instruction from the control unit 70, the slider driving mechanism motor 381 is further rotated, and the i-th link 326 and the piston 37 are further urged toward the close surface by the cam 383 which is rotated simultaneously with the motor 381. Fang 20 200946427 The flange 37 which protrudes to protrude from the outside of the piston 370 is disposed at the stopper of the casing 21, and the face of the 371 hits the moving P 321a. Yu Yu, the piston 370 can not move relative to the close-fitting surface 22_ on the kidney of the P321a due to the stop of the Qiu 3, and the end of the close-fitting surface 22 of the end 23a of the head of the 23rd is stopped at the predetermined position. At the predetermined position, the end 23a rises the peeling line 53. The curved surface of the first surface is formed as shown in Fig.u, since the cover 23 is ❹ 随着 with the front end of the cover 23, the front end 23a of the cover 23 is One of the semiconductor crystal grains 15 is adjacent to the sliding side of the cover 23 and the end of the magenta semiconductor die 15 is slightly off-line 53 is formed at a position slightly closer to the sliding direction of the cover 23 than the crucible 5a. The blade of the die 15 has been detached from the blade _ by the retaining blade 12 to eliminate the attraction force toward the abutment surface 22. Further, a portion of the conductor from the end of the retaining blade 12 has been detached to the peeling (four) A helium gas is introduced between the crystal grains 15 and the holding piece 12, and the surface pressure of the semiconductor wafer 15 on the side of the holding piece 12 becomes atmospheric pressure. On the other hand, the surface of the collet 18 on the side of the semiconductor die 15 is directed toward the cover 23. The pressure of the suction surface of the collet 18 is further lowered before the dead end of the front end 23a. Therefore, the semiconductor aa The pressure on the side of the holding sheet 12 on the side of the sheet 12 is lower than the pressure on the side of the tube 18, and the portion of the semiconductor die 15 peeled off from the holding sheet 12 is adsorbed by the collet 18. Since the holding sheet 12 side and the tube of the semiconductor die 15 The pressure difference on the side of the clip 18 is not too large, and there is a pulling force caused by the holding piece 12, so that the portion from the peeling line 53 of the semiconductor die 15 to the rear end 23c side of the cover 23 and the holding piece 12 is still not peeled off is in the semiconductor. There is a certain gap between the die 15 and the collet 18, and it is still not adsorbed by the collet 18. Therefore, the semiconductor die 15 is small between the portion of the 18 200946427 collet and the portion of the collet that is not 18 Bending deformation. ❹ ❹ As shown in Fig. H) (4), as long as the front end of the cover 23 is advanced from the close surface Μ, the surface on the side of the holding piece 12 is inclined, and the peeling line 53 is located on the side of the rear end 23c of the cover 23. A gap is formed between the surface of the cover 23 and the holding piece 12, and the surface pressure of the cover 位于 on the side of the rear end 23C of the cover line 23 is substantially atmospheric pressure. Further, the surface pressure of the inverted cover of the cover 23 becomes The same atmospheric pressure as the surface pressure of the cover 23, thus except for the abutment Outside the portion of the front end 23a, the chamfered portion 12 is not peeled off from the semiconductor die 15. Therefore, the peeling line 53 is as shown in Fig. 1(b)' along the front end 23a of the cover 23, from the semiconductor die 15 The extension line from the side to the side in the width direction, the peeling line 53 is not extended to the portion of 23b. <The training is shown in Fig. 2, since the thickness of the cover 23 is smaller than the predetermined advancement height of the close surface 22 of the front end The state of contact with the lower side of each of the side states 23c is attracted, and the rear end of the cover 23 is in contact with the surface of the sliding groove A. Further, the longitudinal groove 3" is covered with the semiconductor die 15 - abundance, 5 right *, and the engraving and the crucible 12". Therefore, since the outer portion of the housing 21 is inclined to the housing 21 The inside of the vacuum is maintained. U, because of the fact that the piston J of the slider driving mechanism 300 is raised from the surface of the cover member J so as to be close to the degree of the cover 23tr23a, the piston 370 is: The distance between the top of the ritual surface 22 and the predetermined forward height 几乎 and the distance between the first link 326 is hardly changed. 22 Φ ❹ 200946427 Therefore, the cover 23 is only brought into close contact by the rise of the first I. 22 * The dog is not slipped. As shown in Fig. 12 (a), the cam 383 of the member drive mechanism 300 is further rotated in accordance with the command from the control unit 7 to cause the first link 326 to be lifted toward the abutment surface 22, The piston that cannot move to the contact surface 22 and the spring 373 of the 326th portion will start to compress by the motor rhyme and the cam 383 in the opposite direction of the adjoining surface 22. As long as the spring 373 is compressed, the live 370 The advancing surface 22 is not advanced, only the first! link coffee is pushed against the close surface u. Therefore, the pin 328 of the piston 370 is not attached. The surface 22 is raised, and only the pin (2) of the second link 329 located in the engaging groove 326a of the first joint 326 rises in the direction of the abutting surface 22. Thus, the second link 329 starts to rotate around the pin 328. By this rotation operation, the bayonet groove 329a of the other end of the second link 329 is moved to the outer peripheral side of the stage 2, and is rotatably engaged by the arm 23f so as to be fixed inside the engaging groove 32. The slider 33 of the pin 33〇& and the cover 23 of the pin 33G of the slider 332 start to slide toward the outer peripheral side of the stage 20. As shown in Fig. _, as long as the cover 23 slides, the cover 23 is lifted from the suction opening. The end face 41a of the 41 is separated, and the suction opening 41 is opened to form an opening opening portion which is substantially the same as the width of the semiconductor die 15 to be picked up. Since the inside of the casing 21 of the stage 20 is formed by the vacuum device 7ι, Therefore, the opening opening portion 42 attracts the holding piece 12 thereto. As the cover 23 slides, the holding piece 12 is sucked into the opening opening portion 42 to be peeled off from the semiconductor die 15. Due to the semiconductor die 15 and the holding piece 12 The peeling line 53 of the door is a curved shape along the (four) of the cover 23, so the two sides of the cover 23 20094 6427 ❹

22 ’以蓋23之寬度方向之中央隆起成山形之稜線，在沿緊 貼面22之面内，蓋23之各側面23b側為較中央部分向滑 動方向傾斜的線。因此，半導體晶粒15之各侧面側之保: 片12係較半導體晶粒15之寬度方向之中央部分之保持片 12先脫離。如上述，由於剝離線53在沿緊貼面以之面内， 相對於半導體晶粒15之各端l5a、i5b或相對於滑動方向傾 斜’因此可緩和被筒夾18吸附之部分與未被筒夾Η吸附 之部分間之微小弯曲變形而產生之應力，有效抑 晶粒15之損傷。 隨著蓋23之滑動，開口開啟部42肖載台2〇之外周侧 變大，剝離線53亦依序朝載台2G之外周側平行移動。保 持片12沿剝離線53從半導體晶粒15之一端…向另一端 15b依序脫離，依序被開口開啟部42吸引。 如圖13所示，只要蓋23滑動而使剝離線53從半導體 晶粒之一端15a向另-端…移動，與參照_ u所說明 者同樣，线進人保持片U已脫離之-端15a到剝離線53 為止部分之半導體晶粒15與保持片12間，此部分之半導 體晶粒15之保持片12側之面之壓力成為大氣壓。另一方 面，半導體晶粒之筒夾18側之面因接近筒夾18之吸附面 而C力低，因此從保持# 12已脫離之一端…到制離線 之跟月J為止之半導體晶粒15之部分被筒夹18吸附。接 著隨者藉由蓋23之滑動使剝離線53從半導體晶粒15之 ήίϊό 1 5 a 向另 ^— λφ ι^ι 端5b移動，半導體晶粒15從一端l5a向 另一端15b依序被筒失18吸附。 24 200946427 ，如圖12(a)所示，只要蓋23滑動，蓋23之後端23c就 曰從載口 2〇之外周突出。接著，蓋23之與頂起保持片12 之表面相反側之下面與滑動用槽22a之表面接觸並滑動。因 此+由於能抑制空氣從蓋23下面進入筐體21内部，因此 使蓋23滑動期間’能良好保持筐體21内部之真空，能右 :丈將保持片12真空吸引至吸引開口 41中。又，由於只要 蓋 β動，蓋23之後端23c就會從密接面22往下方逐漸22' is a mountain-shaped ridgeline which is raised in the width direction of the cover 23, and the side of each side surface 23b of the cover 23 is a line which is inclined toward the sliding direction from the center portion in the surface along the abutting surface 22. Therefore, the spacers 12 of the semiconductor crystal grains 15 are separated from the holding sheets 12 at the central portion in the width direction of the semiconductor crystal grains 15 first. As described above, since the peeling line 53 is inclined in the plane along the abutting surface with respect to the respective ends l5a, i5b of the semiconductor die 15 or with respect to the sliding direction, the portion adsorbed by the collet 18 and the uncontained tube can be alleviated. The stress generated by the slight bending deformation between the portions of the adsorption is effective to suppress the damage of the crystal grains 15. As the cover 23 slides, the outer opening side of the opening opening portion 42 of the oscillating table 2 is increased, and the peeling line 53 is sequentially moved in parallel toward the outer peripheral side of the stage 2G. The holding sheet 12 is sequentially separated from one end of the semiconductor die 15 to the other end 15b along the peeling line 53, and is sequentially attracted by the opening opening portion 42. As shown in Fig. 13, as long as the cover 23 slides and the peeling wire 53 is moved from the one end 15a of the semiconductor die to the other end, as in the case of the reference _ u, the wire enters the end portion 15a from which the sheet U has been detached. The pressure between the semiconductor die 15 and the holding sheet 12 at a portion of the stripping line 53 is constant, and the pressure of the surface of the semiconductor wafer 15 on the holding sheet 12 side becomes atmospheric pressure. On the other hand, since the surface of the collet 18 on the side of the collet 18 of the semiconductor die is close to the adsorption surface of the collet 18, the C-force is low, so that the semiconductor die 15 from the one end of the holding #12 is removed to the follow-up moon J. Part of it is adsorbed by the collet 18. Then, by the sliding of the cover 23, the stripping wire 53 is moved from the 半导体 ϊό 1 5 a of the semiconductor die 15 to the other end λ φ ι 5 5b, and the semiconductor die 15 is sequentially passed from the one end l5a to the other end 15b. Loss of 18 adsorption. 24 200946427, as shown in Fig. 12(a), as long as the cover 23 slides, the rear end 23c of the cover 23 protrudes from the outer periphery of the load port 2〇. Next, the lower surface of the cover 23 opposite to the surface on which the holding piece 12 is lifted is brought into contact with the surface of the sliding groove 22a and slid. Therefore, since the air can be prevented from entering the inside of the casing 21 from the lower surface of the lid 23, the vacuum inside the casing 21 can be well maintained during the sliding of the lid 23, and the holding sheet 12 can be vacuum-sucked into the suction opening 41. Further, since the cover 23 is moved, the rear end 23c of the cover 23 gradually descends from the close contact surface 22 downward.

移動因此使i 23滑動時，i 23之後端23c不會撞到鄰接 之半導體晶粒15，且不因蓋23之滑動而使鄰接之半導體晶 粒15損傷，因此即使周圍有鄰接之半導體晶粒15時亦： 容易拾取半導體晶粒15。 又雖開口開啟部42被已被剝離之保持片丨2覆蓋， ㈣於將保持片12吸引至開口開啟部42中，且蓋23之前 端23a持續向保持片12未剝離之部分滑動，因此開口開啟 部42吸引保持片12不會停止，可將保持片整體 體晶粒15之—端i5a *另 ^ ^ +導 糕15a向另一端15b依序吸引至開口開啟部 42並逐漸剝離，以免產生未剝離部分。 〇 只要貼付於半導體晶粒15之保持4 12全脫離，半導 體晶粒15就會全面被筒夾18吸附，藉由筒夾Μ進行拾取。 拾取半導體晶粒15後，只要滑件驅動機構3〇〇之凸 383依照控制部7〇之指令進一步轉動，此次藉由凸輪如 之轉動，使第1連桿326之軸326b下降，隨之，蓋门之 前端23a朝向吸引開口 41之端面41a之方向滑動，只要^ 端23a與端面41a接觸’蓋23就會關閉吸引開口 4卜於是& 25 200946427 彈簧373之壓縮力被開放。接著，只要凸輪383進一步轉 動而使軸326b下降，活塞370及第1連桿326、第2連桿 329就會一起下降，蓋23之前端23a下降到與緊貼面22之 表面大致同一位置為止，返回初始位置。 如以上所述，本實施形態係在使蓋23之前端23a從緊 貼面22朝上方前進之狀態使蓋23滑動，依序吸引保持片 12至與出現於半導體晶粒15下方近處之半導體晶粒15大 ❹ 致同一寬度之吸引開口 41之開口開啟部42中，藉此依序 進打保持片12之剝離，並且將半導體晶粒15依序吸附至 在半導體晶粒15之上方近處待機之筒夾18，因此，當保持 片 匐離時，旎達到抑制施加於半導體晶粒1 5之力並容 易拾取半導體晶粒15之效果。又，本實施形態中，在使縱 ，64:成真空之狀態下，使蓋23之前端。&從緊貼面a 2上方前進而頂起半導體晶粒15’藉由保持片12所產生之 ❹ °下拉伸力，用以剥離欲拾取之半導體晶粒15之一端15 之兩角之保牲Η ， 瑪15a 滑動，將佯持Η 成剝離之開端，然後，使蓋23 將保持片12吸引至開口開啟部 到剝離保持片12之效果。 U此此更合易達 15^向實Γ㈣中，由於使蓋23從半導體晶粒15之-端 D另—端側l5b滑動，依序將保 開啟部42以治， 俯符片12吸引至開口 進仃保持片12之剝離，因并 42被吸引$ p弓 P使開口開啟部 被及引至開口開啟部42中之保持片 向未剝離保拉Η , η 覆蓋蓋23亦能 寺片12之部分持續滑動，因 U整體依序叨u s 此此達到將保持片 吸弓I至開口開啟部42逐漸刻離’且容易進行保 26 200946427 持片12全部剝離之效果。又，由於蓋23之後端23c或蓋 23之下面係接觸滑動用槽22a之表面而滑動，因此由於能 有效抑制空氣從筐體21之外部向筐體21之内部侵入，且 良好維持筐體21内部之真空，因此能達到有效將保持片12 吸引至開口開啟部42中進行剝離之效果。 ❹ ❿ 本實施形態中’由於蓋23之前端23a是曲面，剝離線 53在沿緊貼面22之面内，相對於半導體晶粒15之各端 15a、l5b或相對於滑動方向傾斜，因此能緩和因被筒夾18 吸附之部分與未被筒夹18吸附之部分間之微小彎曲變形所 產生之應力，及有效抑制半導體晶粒15之損傷。 本實施形態中，由於從緊貼面22向上方前進者係蓋23 之前端23a附近之一部分，蓋23之後端23c未從緊貼面22 向上方前進，因此由於當使蓋23滑動時，蓋23之後端23c :會撞到鄰接之半導體晶粒15’不會因蓋23之滑動而使鄰 接之半導體晶粒15損傷，因此能達到即使周圍有鄰接之半 導體晶粒15時亦容易拾取半導體晶粒15之效果。 又，本實施形態中’由於載台20係藉由載台 驅動機構73相對於保持片12 下方向 仇 ^ A 退方向僅進行上下動 作，而未具備對水平方向(沿保持片 下動 構’因此無對水平方向之機構 向)之移動機 沿保持片12之方向之位i 、Μ灿）等，相對於 〜饥置之穩定性良好。 之半導體晶粒15與蓋23之沿保持 由於拾取 藉由晶圓保持具水平方向驅動面方向之對準係 對準時，載台20之水平方 行，因此水平方向 水千方向位置穩定’能達到減低載台2。 27 200946427 之蓋23與貼付於保持片12之半導體晶粒15之對準時產生 位置偏差之效果。 參照圖14〜圖18說明本發明之其他實施形態。與參照 圖1〜圖13所說明之實施形態同樣之部分附加同樣的符號並 省略說明。 如圖14所示，本實施形態之半導體晶粒之拾取裝置1〇〇 之載台20與先前參照圖5所說明之實施形態同樣具備：吸 引開口 41，設置於緊貼面Μ，與圖4所示之所拾取之半導 6 體晶粒15大致同-寬度’其長度較半導體晶粒15為長， 從載台20之内周側向外周側直線狀延伸；以及蓋23，與吸 引開口 41之寬度大致同一寬度，且沿吸引開口 4ι之延伸 方向滑動以開閉吸引開口 41。蓋23沿滑動方向用以關閉吸 引開口 41侧係前端23a，蓋23開啟側端係後端23c。蓋u 之側面23b與吸引開口 41之側面41b構成滑動面。 如圖15、16所示，蓋23係長方形，蓋23之前端23& 係平面，當蓋23關閉時，前端23a接觸之吸引開口 41 P面41a亦為平面。 又，在蓋23之前端23a接觸側之吸引開口 41之兩角部 "又有縱槽364，其係從吸引開口 41之側面41b向吸引開口 41之寬度方向突出，從緊貼面22向載台2〇之内面朝上下 向L伸，以吸引保持片12。縱槽364係由與吸引開口 41 •連接之大致1 8〇度之扇形圓筒面構成。 如圖16(a)所示’當蓋23關閉時，由於蓋23之前端2^ 與端面4la接觸，因此在蓋23關閉之狀態下，於蓋23、吸& 28 200946427 引開口 41之兩角部，具有大致 ⑹係連通緊貼面2…體21>度之扇形圓靖面之縱槽 两以與筐體21之内部。又，如圖 當把半導體晶粒15之—端15a對準 或蓋23之前端23a時 开 之面41a 之上。 千导體日日粒15位於蓋23之前端23a 其次’邊參照圖17〜圖19邊 ❹ 導體晶粒之拾取裝置1〇〇從伴^\月利用本實施形態之半 之動作。關於參，昭圖】圖13所 拾取半導體晶粒15 省略說明。 彳” m附加同樣符號並 如圖1 7(a)所示，和击丨部7 蓋…半導體晶粒：之= 所示之晶圓保持具水平方向 :寬二二3:準關閉狀態之蓋23之前端W… =方向位置與半導體晶粒15之寬度方 -調整以使半導體晶粒15之側面與蓋 進 由於蓋23之寬度與欲拾取之 。 声，m 平導體日日粒15大致同一寬 又因此只要將一側面23b對準 能推 > 史播對準丰導體晶粒15之侧面，就 丁：導體晶粒15之各側面與蓋23之各側面 丰。如圖17(b)所示，只要蓋23 耵 ^ , 0 與+導體晶粒15之位置— 丰導體晶粒15就會位於蓋23之上。 =朝載台2。之保持片12之下面前進緊 體晶粒1 5之對準έ士走，地止,A 守 扭— U控制部7G就結束對準步驟。接著， 控制部70將筒夾18移動至 Μ接者 折淹, 紙t取之+導體晶粒15之上方 近處，保持與半導體晶粒15隔少許間隙之高度。只要筒爽 29 200946427 18之移動結束，控制部7〇 处 附孔19吸弓丨空蒸，㈣+會藉由真工裝置71開始從吸 機狀態。 恿、+導體曰曰粒15之吸附待 如圖P〜圖19所示，控制部7〇 控制部7。藉由真空裝S7 片_步驟。 成真空。只要筐體20 h 之内部形 干之謹體21 部壓力形成真空，與圖剛所 不之d體21之内部連通之 ❹ 導體晶粒b之部分之保持片12吸：^為=2,2將鄰接半 3〇〇 要盖23之剛端23a從緊貼面22向上方前 進^ 23之前端23a就會頂起保持片η與半導體晶粒η 之-鳊15a’ t 23之頂起保持片12之表面係從蓋u之前 端23a側向後端23c侧向下傾斜。 著蓋23之前端23a之上升，蓋23將欲拾取之半導體 晶粒15與保持片12往上頂起。另一方面’如® 18(b)所示， 在位於成為真空之縱槽364之上之保持片12係被吸引固定 於緊貼面22。因此，藉由蓋23之上升，貼付於欲拾取之半 導體晶粒15之保持片12係向緊貼面22被拉向斜下，藉由 此向斜下之拉伸力，使縱槽364附近之半導體晶粒15兩角 部分之保持片12少許剝離。接著，如圖^所示，由於隨 著蓋23之前端23&之上升蓋23會轉動，因此蓋23之前端 23a較半導體晶粒15之一端15a稍向蓋23之滑動方向移 動’使此部分之保持片12從半導體晶粒15脫離，在較半 導體晶粒15之一端15a稍靠近蓋23之滑動方向之位置形成 200946427 剝離線53。接著，半導體晶粒15之一端15a舆至剝離線53 跟則為止部分之半導體晶粒1 5係被筒夾1 8吸附。 ❹ ❹ 如圖19(b)所示，只要蓋23滑動’蓋23之前端23&就 會從吸引開口 41之端面41 a離開，吸引開口 4丨開啟，形成 與欲拾取之半導體晶粒15大致同一寬度之開口開啟部42， 開口開啟部42係吸引保持片12於其中。接著，隨著蓋23 之滑動，保持片12被吸入開口開啟部42中，從半導體晶 粒15被剝離。隨著蓋23之滑動，開口開啟部42向載台20 之外周側變大，剝離線53亦依序朝載台20之外周侧平行 移動。保持片丨2係沿剝離線53從半導體晶粒15之一端15& 向另-端15b依序脫離’依序被開口開啟部42吸引。 只要貼付於半導體晶粒15之保持片12全部脫離，半 粒15就會全面被筒夾18吸附，被筒夹18拾取。 :實施形態係藉由以平面構成蓋23之前端…與吸引 開口之簡便構成，與先 同樣，能達到當保持片12剝錐_ “ 乃之貫施形態 b之力且容易拾取半導體晶粒S’抑制施加於半導體晶粒 取之半導體晶粒15之-端15之效果。又藉由剝離欲拾 之開端，然後，使蓋23滑動之保持片12以形成剝離 離，因此料❹並逐漸制 而，能達到良好維持奮體21内部之真二剝離之效果。進 吸引至開口開啟部42中並制離之效果 保持片12 31 200946427 (附記1) 申請專利範圍第3項所記載之半導體晶粒之拾取裝 置’其特徵係滑動驅動機構具備·· 驅動部，安裝於與載台之緊貼面相反側之基體部，將 設置於，台:部之第1連桿朝相料緊貼面進退方向驅動； 活，叹置於載台内部，相對於緊貼面進退； ❹ ❹ 止動部’設置於載台内部’用以限制活塞相對於緊貼 面之進退方向之動作； τ π系貼 彈^將第1連捍與活塞連接於相對於緊貼面進退之 '’只要活塞抵接於止動部，就會被壓縮； 導軌，安裝於活塞，盥緊When the movement causes the i 23 to slide, the rear end 23c of the i 23 does not hit the adjacent semiconductor die 15 and the adjacent semiconductor die 15 is not damaged by the sliding of the cover 23, so that even if there are adjacent semiconductor grains around At 15 o'clock: The semiconductor die 15 is easily picked up. Further, although the opening opening portion 42 is covered by the peeling holding piece 2, (4) the holding piece 12 is attracted to the opening opening portion 42, and the front end 23a of the cover 23 continues to slide toward the portion where the holding piece 12 is not peeled off, so the opening The opening portion 42 attracts the holding piece 12 without stopping, and the end piece i5a of the holding piece main body die 15 can be sequentially sucked to the opening end portion 42 to the other end 15b and gradually peeled off, so as to avoid generation. Unpeeled part.半 As long as the retention of the semiconductor die 15 is fully removed, the semiconductor die 15 is fully absorbed by the collet 18 and picked up by the collet. After picking up the semiconductor die 15, as long as the slider 383 of the slider driving mechanism 3 is further rotated according to the command of the control unit 7〇, the cam 326b of the first link 326 is lowered by the rotation of the cam. The front end 23a of the door is slid toward the end surface 41a of the suction opening 41, and as long as the end 23a contacts the end surface 41a, the cover 23 closes the suction opening 4, and then the compression force of the spring 373 is opened. Next, as long as the cam 383 is further rotated to lower the shaft 326b, the piston 370, the first link 326, and the second link 329 are lowered together, and the front end 23a of the cover 23 is lowered to substantially the same position as the surface of the abutting surface 22. , return to the initial position. As described above, in the present embodiment, the cover 23 is slid in a state where the front end 23a of the cover 23 is advanced upward from the adhering surface 22, and the holding piece 12 is sequentially attracted to the semiconductor which is present near the lower side of the semiconductor die 15. The crystal grains 15 are formed in the opening opening portion 42 of the suction opening 41 of the same width, thereby sequentially peeling off the holding sheet 12, and sequentially adsorbing the semiconductor crystal grains 15 to the vicinity of the semiconductor crystal grains 15. The collet 18 is in standby, and therefore, when the holding piece is separated, the crucible achieves the effect of suppressing the force applied to the semiconductor die 15 and easily picking up the semiconductor die 15. Further, in the present embodiment, the front end of the lid 23 is made in a state where the vertical direction is 64: a vacuum is applied. & advancing from the abutting surface a 2 to lift the semiconductor die 15' by stretching the tensile force generated by the sheet 12 to peel off the two corners of one end 15 of the semiconductor die 15 to be picked up The saddle roller 15a slides to hold the crucible opening, and then the cover 23 is caused to attract the retaining piece 12 to the opening opening portion to the peeling holding piece 12. In this case, the cover 23 is slid from the other end side l5b of the semiconductor die 15 and the opening portion 42 is sequentially treated to prevent the opening portion 12 from being attracted. The opening of the opening retaining piece 12 is peeled off, and the opening 42 is attracted to the opening opening portion and the holding piece leading to the opening opening portion 42 is not peeled off, and the η cover cover 23 can also be used for the temple 12 The part continues to slide, because the U as a whole is sequentially 此us, thereby achieving the effect of keeping the sheet suction I to the opening opening portion 42 gradually slid away, and it is easy to carry out the detachment of the sheet 12 200946427. Further, since the rear end 23c of the lid 23 or the lower surface of the lid 23 is slid by contacting the surface of the sliding groove 22a, it is possible to effectively suppress the intrusion of air from the outside of the casing 21 into the interior of the casing 21, and the casing 21 is well maintained. The internal vacuum can thereby achieve the effect of effectively attracting the holding piece 12 into the opening opening portion 42 for peeling. ❿ ❿ In the present embodiment, since the front end 23a of the cover 23 is a curved surface, the peeling line 53 is inclined with respect to the respective ends 15a, 15b of the semiconductor die 15 or with respect to the sliding direction in the plane along the abutting surface 22, thereby enabling The stress generated by the slight bending deformation between the portion adsorbed by the collet 18 and the portion not adsorbed by the collet 18 is moderated, and the damage of the semiconductor crystal grain 15 is effectively suppressed. In the present embodiment, since the portion of the vicinity of the front end 23a of the cover 23 is advanced upward from the abutment surface 22, the rear end 23c of the cover 23 does not advance upward from the abutment surface 22, so that when the cover 23 is slid, the cover 23 rear end 23c: the semiconductor die 15' that will collide with the adjacent semiconductor die 15' will not damage the adjacent semiconductor die 15 due to the sliding of the cover 23, so that it is easy to pick up the semiconductor crystal even if there are adjacent semiconductor crystal grains 15 around. The effect of the grain 15. Further, in the present embodiment, the stage 20 is only vertically moved by the stage driving mechanism 73 with respect to the lower direction of the holding piece 12, and is not provided with the horizontal direction (below the holding piece). Therefore, there is no position in the horizontal direction of the moving machine in the direction of the holding piece 12, i, and so on, and the stability is good with respect to the hunger. When the edge of the semiconductor die 15 and the cover 23 is aligned by the alignment of the driving direction of the wafer holder in the horizontal direction, the horizontal direction of the stage 20 is stabilized. Reduce the stage 2. 27 The effect of the positional deviation of the cover 23 of 200946427 and the alignment of the semiconductor die 15 attached to the holding piece 12. Another embodiment of the present invention will be described with reference to Figs. 14 to 18 . The same portions as those of the embodiment described with reference to Fig. 1 through Fig. 13 are denoted by the same reference numerals, and their description is omitted. As shown in FIG. 14, the stage 20 of the semiconductor die pick-up device 1 of the present embodiment includes a suction opening 41 and is provided on the close surface, similarly to the embodiment described above with reference to FIG. The illustrated semi-conductive 6-body die 15 is substantially the same width-width as the semiconductor die 15 and extends linearly from the inner peripheral side to the outer peripheral side of the stage 20; and the cover 23 and the suction opening The width of 41 is substantially the same width, and slides in the extending direction of the suction opening 4 to open and close the suction opening 41. The cover 23 is used to close the suction opening 41 side front end 23a in the sliding direction, and the cover 23 opens the side end rear end 23c. The side surface 23b of the cover u and the side surface 41b of the suction opening 41 constitute a sliding surface. As shown in Figs. 15 and 16, the cover 23 is rectangular, and the front end 23& of the cover 23 is flat. When the cover 23 is closed, the suction opening 41 P surface 41a which the front end 23a contacts is also flat. Further, the two corner portions of the suction opening 41 on the contact side of the front end 23a of the cover 23 have a longitudinal groove 364 which protrudes from the side surface 41b of the suction opening 41 in the width direction of the suction opening 41, from the abutting surface 22 The inner surface of the stage 2 is extended upward and downward to attract the holding piece 12. The longitudinal groove 364 is constituted by a sector-shaped cylindrical surface of approximately 18 degrees connected to the suction opening 41. As shown in Fig. 16 (a), when the cover 23 is closed, since the front end 2^ of the cover 23 is in contact with the end surface 4la, in the state where the cover 23 is closed, the cover 23, the suction & 28 200946427, the opening 41 The corner portion has a longitudinal groove 2 of a fan-shaped circular surface of a substantially (6)-connecting abutting surface 2...body 21> and the inside of the casing 21. Further, as shown in the figure, when the end 15a of the semiconductor die 15 is aligned or the face 23a of the front end 23a of the cover 23 is opened. The one-time conductor day 15 is located at the front end 23a of the cover 23, and the pick-up device 1 of the conductor die is referred to as the side of the second embodiment. Regarding the reference, the semiconductor wafer 15 picked up in Fig. 13 is omitted.彳" m is attached with the same symbol and as shown in Figure 17 (a), and the smashing portion 7 cover ... semiconductor die: = the wafer holder shown horizontally: width two two three: the state of the quasi-closed state 23 front end W... = direction position and width of the semiconductor die 15 - adjusted so that the side and cover of the semiconductor die 15 are picked up by the width of the cover 23. The sound, m flat conductor day 15 is substantially the same Therefore, as long as one side 23b is aligned with the side of the conductive conductor die 15, the sides of the conductor die 15 and the sides of the cover 23 are abundance, as shown in Fig. 17(b). As shown, as long as the cover 23 耵 ^ , 0 and the position of the + conductor die 15 - the conductor die 15 will be located above the cover 23. = Advance to the underside of the holder 12 5 Alignment with the gentleman, stop, A lock - U control portion 7G ends the alignment step. Then, the control portion 70 moves the collet 18 to the splicer, and the paper t takes the + conductor dies Near the top of the 15, the height of the gap between the semiconductor die 15 and the semiconductor die 15 is kept. As long as the movement of the cylinder 29 is completed, the control section 7 is attached to the hole 19 Air steaming, (4)+ will start from the suction machine state by the ergonomic device 71. The adsorption of the 曰曰 and + conductor 曰曰 particles 15 will be as shown in Fig. P to Fig. 19, and the control unit 7 〇 the control unit 7. By vacuum mounting S7 Sheet _ step. Vacuuming. As long as the inside of the housing 20h is dry, the pressure of the body 21 is vacuumed, and the inside of the body of the d body 21 is connected to the inside of the body. :^ is =2,2 adjoining the rigid end 23a of the half cover 31 from the abutting surface 22 upwards ^ 23 the front end 23a will lift the holding piece η and the semiconductor die η - 鳊 15a' The surface of the holding piece 12 of the t 23 is inclined downward from the side of the front end 23a toward the rear end 23c of the cover u. The rising of the front end 23a of the cover 23 causes the cover 23 to feed the semiconductor die 15 and the holding piece 12 to be picked up. On the other hand, as shown in Fig. 18(b), the holding piece 12 above the longitudinal groove 364 which is a vacuum is attracted and fixed to the abutting surface 22. Therefore, by the rise of the cover 23, The holding piece 12 attached to the semiconductor die 15 to be picked up is pulled downward toward the abutting surface 22, whereby the tensile force is obliquely downward, so that the half of the longitudinal groove 364 is The holding piece 12 at both corners of the conductor die 15 is slightly peeled off. Then, as shown in FIG. 2, since the cover 23 is rotated as the front end 23& of the cover 23 is rotated, the front end 23a of the cover 23 is smaller than the semiconductor die 15 The one end 15a is slightly moved in the sliding direction of the cover 23 to disengage the holding piece 12 of this portion from the semiconductor die 15, and a 200946427 peeling line 53 is formed at a position slightly closer to the sliding direction of the cover 23 than the one end 15a of the semiconductor die 15. Next, the semiconductor die 15 at one end 15a of the semiconductor die 15 to the stripping line 53 is adsorbed by the collet 18. ❹ ❹ As shown in Fig. 19(b), as long as the cover 23 slides, the front end 23& of the cover 23 is separated from the end face 41a of the suction opening 41, and the suction opening 4 is opened to form a substantially similar to the semiconductor die 15 to be picked up. The opening opening portion 42 of the same width, the opening opening portion 42 attracts the holding piece 12 therein. Then, as the cover 23 slides, the holding piece 12 is sucked into the opening opening portion 42, and is peeled off from the semiconductor crystal grain 15. As the cover 23 slides, the opening opening portion 42 becomes larger toward the outer peripheral side of the stage 20, and the peeling line 53 also moves in parallel toward the outer peripheral side of the stage 20. The holding sheet 2 is sequentially attracted by the opening opening portion 42 from the one end 15& of the semiconductor crystal grain 15 to the other end 15b along the peeling line 53. As long as the holding piece 12 attached to the semiconductor die 15 is completely detached, the half piece 15 is completely absorbed by the collet 18 and picked up by the collet 18. The embodiment is formed by flattening the front end of the cover 23 and the suction opening, and the same as before, it is possible to achieve the force of the sheet 12 when the sheet 12 is peeled off and the semiconductor wafer S is easily picked up. 'Suppressing the effect applied to the terminal 15 of the semiconductor die 15 taken from the semiconductor die. Further, by peeling off the open end, the cover 23 is slid to hold the sheet 12 to form a peel-off, so that the material is gradually formed. However, it is possible to achieve the effect of maintaining the true two peeling inside the body 21. The effect of holding the film into the opening opening portion 42 and removing it is maintained. 12 31 200946427 (Supplementary Note 1) The semiconductor crystal described in claim 3 The pick-up device for a grain is characterized in that the sliding drive mechanism includes a driving portion that is attached to a base portion on the opposite side of the contact surface of the stage, and is disposed on the first link of the table: Drive in the advance and retreat direction; live, sigh inside the stage, advance and retreat relative to the close surface; ❹ ❹ Stopper 'set inside the stage' to limit the movement of the piston relative to the adjoining surface; τ π Sticker ^ will be the first link The piston is connected to the '' with respect to the adjoining surface as long as the piston abuts against the stop, it is compressed; the guide rail is mounted on the piston, tightening

Ji£ ^ ”緊貼面大致平行，於吸引開口 I伸之方向延伸，安裝能自由活動之滑件，·以及 第2連桿’能自由轉動地安奘 盥篦]、金栌 ㈣地女裝於活塞，用以連接滑件 ”第1連;f于，只要活塞抿接 對於緊貼面之進退方向之就會將第1連桿相 作。 向之動作轉換為滑件沿導執方向之動 (附記2) 申請專利範圍f 8項所記載之 ♦，盆姓外·+>Λ· 體日日粒之拾取方 ^ .半導體晶粒之拾取裝置 方向驅動機構，用以使載台朝相二置具備.載台上下 動.mu 對於料片進退方向移 ， 日日圓保持具水平方向驅動部，使固定贴杆古k 之半導體晶粒之保持片之曰圓“吏固疋貼付有拾取 對準步㈣」 保持片面移動； 貼面盥蓋頂Mh 万Μ動機構，使載台之緊 起保持片的面緊貼於保持片，藉由晶圓保持具 32 200946427 水平方向驅動部進行拾取之半導體 準。 晶粒之水平方向 之對 【圖式簡單說明】 圖1係表示貼付於保持片之晶圓的說明圖。 圖2係表示貼付於保持片之半導體晶粒的說明圖。 圖3係表示晶圓保持具之構成的說明圖。 冑4係表示本發明實施形態之半導體晶粒之拾取裝 © 之構成的說明圖。 圖5係表示本發明實施形態之半導體晶粒之拾取裝置 之載台的立體圖。 圖6係表示本發明實施形態之半導體晶粒之拾取裝置 之載台之吸引開口開啟狀態的俯視圖。 圖7係表示本發明實施形態之半導體晶粒之拾取裝置 之載台之吸引開口關閉狀態與經對準之半導體晶粒之位置 關係的俯視圖。 圖8係表示本發明實施形態之半導體晶粒之拾取裝置 之載台寬度方向之截面圖。 圖9係表示本發明實施形態之半導體晶粒之拾取裝置 之滑件驅動機構開始動作前之狀態的說明圖。 圖10係表示本發明實施形態之半導體晶粒之拾取裝置 之蓋前端從緊貼面前進之狀態的說明圖。 圖11係表示本發明實施形態之半導體晶粒之拾取裝置 之蓋前端從緊貼面前進之狀態的蓋與半導體晶粒與保持片 33 200946427 與筒夾的說明圖。 圖12係表示本發明實施形態之半導體晶粒之拾取裝置 之蓋滑動狀態的說明圖。 圖13係表示本發明實施形態之半導體晶粒之拾取裝置 之蓋滑動狀態的蓋與半導體晶粒與保持片與筒夾的說明 圖。 圖14係表不本發明其他實施形態之半導體晶粒之拾取 裝置之載台的立體圖。 圖1 5係表不本發明其他實施形態之半導體晶粒之拾取 裝置之載台之吸引開口開啟狀態的俯視圖。 圖16係表示本發明其他實施形態之半導體晶粒之拾取 裝置之载台之吸引開口關閉狀態與半導體晶粒之位置關係 的俯視圖。 圖17係表示本發明其他實施形態之半導體晶粒之拾取 裝置之滑件驅動機構開始動作前之狀態的說明圖。 ❹ 圖1 8係表示本發明其他實施形態之半導體晶粒之拾取 裝置之蓋前端從緊貼面前進之狀態的說明圖。 圖1 9係表示本發明其他實施形態之半導體晶粒之拾取 裝置之蓋滑動狀態的說明圖。 晶圓保持具 晶圓 保持片 【主要元件符號說明 10 11 34 12 200946427Ji£ ^ "The close-fitting surface is substantially parallel, extending in the direction in which the suction opening I extends, and the sliding member that can move freely is installed, and the second link 'is freely rotatably mounted", and the golden 栌(四) The piston is used to connect the slider "the first link; f", as long as the piston is connected to the adjoining surface in the advancing and retracting direction, the first link is made. The action is converted into the action of the slider in the direction of the guide (attachment 2). ♦ The scope of the application of patent scope f 8 ♦, the surname of the pot +································· The pick-up device direction driving mechanism is configured to make the stage facing the phase two. The stage moves up and down. Mu moves in the direction of the advance and retreat of the material, and the sun circle maintains the horizontal driving part, so that the semiconductor chip of the fixed rod is fixed. Keep the film round and round, and then keep the one-sided movement. Wafer holder 32 200946427 The horizontal drive unit picks up the semiconductor. Alignment of the horizontal direction of the crystal grains [Simplified description of the drawings] Fig. 1 is an explanatory view showing a wafer attached to a holding sheet. Fig. 2 is an explanatory view showing a semiconductor die attached to a holding sheet. Fig. 3 is an explanatory view showing the configuration of a wafer holder.胄4 is an explanatory view showing a configuration of a semiconductor wafer pick-up device © in the embodiment of the present invention. Fig. 5 is a perspective view showing a stage of a semiconductor die pick-up device according to an embodiment of the present invention. Fig. 6 is a plan view showing a state in which the suction opening of the stage of the semiconductor die pick-up device according to the embodiment of the present invention is opened. Fig. 7 is a plan view showing the positional relationship between the closed state of the suction opening of the stage of the semiconductor wafer pick-up apparatus according to the embodiment of the present invention and the aligned semiconductor crystal grains. Fig. 8 is a cross-sectional view showing the stage width direction of the semiconductor wafer pick-up device according to the embodiment of the present invention. Fig. 9 is an explanatory view showing a state before the slider drive mechanism of the semiconductor die pick-up device according to the embodiment of the present invention starts operating. Fig. 10 is an explanatory view showing a state in which the tip end of the lid of the semiconductor wafer pick-up device of the embodiment of the present invention advances from the adhering surface. Fig. 11 is an explanatory view showing a cover, a semiconductor die and a holding piece 33 200946427 and a collet in a state in which the tip end of the lid of the semiconductor die pick-up device of the embodiment of the present invention advances from the contact surface. Fig. 12 is an explanatory view showing a state in which the cover of the semiconductor die pick-up device according to the embodiment of the present invention is slid. Fig. 13 is a view showing a cover, a semiconductor die, a holding piece, and a collet in a state in which the cover of the semiconductor die pick-up device according to the embodiment of the present invention is in a sliding state. Fig. 14 is a perspective view showing a stage of a semiconductor wafer pick-up apparatus according to another embodiment of the present invention. Fig. 15 is a plan view showing a state in which the suction opening of the stage of the semiconductor die pick-up device according to another embodiment of the present invention is opened. Fig. 16 is a plan view showing the positional relationship between the closed state of the suction opening of the stage of the semiconductor wafer pick-up apparatus according to another embodiment of the present invention and the semiconductor crystal grain. Fig. 17 is an explanatory view showing a state before the slider driving mechanism of the semiconductor die pick-up device according to the other embodiment of the present invention starts operating. Fig. 8 is an explanatory view showing a state in which the tip end of the lid of the semiconductor wafer pick-up device of the other embodiment of the present invention advances from the adhering surface. Fig. 19 is an explanatory view showing a state in which the cover of the semiconductor die pick-up device according to another embodiment of the present invention is slid. Wafer holder wafer holding sheet [Main component symbol description 10 11 34 12 200946427

13 環 14 切入間隙 15 半導體晶粒 15a 一端 15b 另一端 16 擴張環 17 環壓板 18 筒爽 19 吸附孔 20 載台 21 筐體 22 緊貼面 22a 滑動用槽 23 蓋 23a 前端 23b 側面 23c 後端 23e 倒角部分 23f 臂 24 基體部 25 驅動部 41 吸引開口 41a 端面 41b 側面 35 200946427 42 開口開啟部 53 剝離線13 Ring 14 Cut-in gap 15 Semiconductor die 15a One end 15b The other end 16 Expansion ring 17 Ring pressure plate 18 Tube cooling 19 Adsorption hole 20 Stage 21 Housing 22 Close surface 22a Sliding groove 23 Cover 23a Front end 23b Side 23c Rear end 23e Chamfered portion 23f Arm 24 Base portion 25 Driving portion 41 Suction opening 41a End surface 41b Side surface 35 200946427 42 Opening opening portion 53 Stripping line

70 71 72 73 100 300 321a 326 326a ' 329a 326b 控制部 真空裝置 晶圓保持具水平方向驅動部 載台上下方向驅動機構 半導體晶粒之拾取裝置 滑件驅動機構 止動部 第1連桿 卡合槽 軸 326c 滚輪 327 、 328 、 330 、 330a70 71 72 73 100 300 321a 326 326a ' 329a 326b Control unit Vacuum device Wafer holder Horizontal direction drive unit Stage up and down direction drive mechanism Semiconductor die pick-up device Slider drive mechanism Stopper 1st link engagement groove Shaft 326c rollers 327, 328, 330, 330a

329 33 1 332 364 銷 第2連桿 導軌 滑件 縱槽 370 活塞 371 373 381 383 500 凸緣 彈簧 馬達 凸輪 切線 36329 33 1 332 364 pin 2nd link rail slide longitudinal groove 370 piston 371 373 381 383 500 flange spring motor cam tangent 36

Claims (1)

於保持片 付有保持Keep the film 200946427 十、申請專利範面： .一種半導體晶粒之拾取裝置，用以拾取貼付 之半導體晶粒，其特徵在於，具備： 載台，包含緊貼面，該緊貼面係緊貼於與貼 片之半導體晶粒的面相反側的面； 吸引開口，設於緊貼面； 蓋，設於載台，以使關閉吸引開口之侧之前端能從緊 貼面自由前進，沿緊貼面滑動以開閉吸引開口丨以及 、 筒夾’用以吸附半導體晶粒； 當拾取半導體晶粒時，使蓋前端從緊貼面前進，一邊 頂起保持片與半導體晶粒邊使蓋滑動’依序開啟吸引開 口，將保持片依序吸引至開啟之吸引開口，然後從拾取之 半導體晶粒依序剝離保持片，並且將半導體晶粒依序吸附 至在拾取之半導體晶粒之上方近處待機之筒夹。 2.如申請專利範圍第1項之半導體晶粒之拾取裝置，其 吸引開口係與拾取之半導體晶粒大致同一寬度，從載台之 内周侧向外周側直線狀延伸，蓋係與吸引開口之寬度大致 同一寬度’具有縱槽，設於蓋前端接觸之側之吸引開口之 角部’從吸引開口之侧面向吸引開口之寬度方向突出且 從緊貼面向載台内部延伸以吸引保持片。 3·如申請專利範圍第1項之半導體晶粒之拾取裝置，其 具備滑件’安裝有朝吸引開口之寬度方向延伸的銷，藉由 設於載台内部之滑件驅動機構，於吸引開口之延伸方向滑 動’並且相對於緊貼面進退； 37 200946427 蓋備有從前端往關閉吸引開口之侧外伸的臂，透過該 臂能自由轉動地安裝於滑件的銷。 4.如申請專利範圍第2項之半導體晶粒之拾取裝置，其 具備滑件’安裝有朝吸引開口之寬度方向延伸的銷，藉由 設於載台内部之滑件驅動機構’於吸引開口之延伸方向滑 動’並且相對於緊貼面進退； 蓋備有從前端往關閉吸引開口之側外伸的臂，透過該 臂能自由轉動地安裝於滑件的銷。 & 5.如申請專利範圍第3項之半導體晶粒之拾取裝置，其 備有滑動用槽，從緊貼面凹陷蓋之厚度，與蓋大致同一寬 度且從蓋開啟侧之吸引開口端向載台外周侧延伸，當蓋滑 動時，蓋後端即蓋開啟侧端或與蓋頂起保持片之面相反側 的面係邊接觸其表面邊進行滑動。 6.如申請專利範圍第4項之半導體晶粒之拾取裝置，其 備有滑動用# ’從緊貼面凹陷蓋之厚纟，與蓋大致同一寬 度且從蓋開啟側之吸引開口端向載台外周側延伸，當蓋滑 動時，蓋後端即蓋開啟側端或與蓋頂起保持片之面相反側 的面係邊接觸其表面邊進行滑動。 7_如申請專利範圍第5項之半導體晶粒之拾取裝置，其 中丄當使蓋前端從緊貼面前進時，蓋頂起保持片之面係從 蓋前端侧向後端側向下傾斜。 8·如申請專利範圍第6項之半導體晶粒之拾取裝置，其 二當使蓋前端從緊貼面前進時，蓋頂起保持片之面係從 蓋前端侧向後端側向下傾斜。 38 200946427 9 ·如申請專利範圍第丨〜8項中任一項之半導體晶粒之 拾取裝置’其中’蓋前端係凸向關閉吸引開口侧之曲面； 頂起蓋前端之吸引開口端面具有沿蓋前端曲面之曲 面。 10·如申請專利範圍第卜8項中任一項之半導體晶粒之 拾取裝置其中，當拾取半導體晶粒時，將拾取之半導體 晶粒之一端對準關閉狀態之蓋前端，使蓋之寬度方向位置200946427 X. Patent application: A semiconductor die pick-up device for picking up and attaching a semiconductor die, characterized in that it has: a carrier comprising a close-fitting surface, the close-fitting surface being closely attached to the sticker a surface opposite to the surface of the semiconductor die; a suction opening provided on the abutting surface; and a cover disposed on the stage so that the front end of the side closing the suction opening can freely advance from the abutting surface and slide along the abutting surface Opening and closing the opening 丨 and the collet 'to adsorb the semiconductor die; when picking up the semiconductor die, the front end of the cover is advanced from the close surface, and the cover is slid with the semiconductor die while the cover is slid. The opening is attracted, the holding piece is sequentially attracted to the opening suction opening, and then the holding piece is sequentially peeled off from the picked semiconductor die, and the semiconductor die is sequentially adsorbed to the cylinder which is in the vicinity of the picked semiconductor die. folder. 2. The semiconductor die pick-up device of claim 1, wherein the suction opening is substantially the same width as the picked semiconductor die, and extends linearly from the inner peripheral side to the outer peripheral side of the stage, the cover and the suction opening. The width is substantially the same width 'having a longitudinal groove, and the corner portion of the suction opening provided on the side where the tip end contacts the tip protrudes from the side surface of the suction opening toward the width direction of the suction opening and extends from the abutting surface toward the inside of the stage to attract the holding piece. 3. The pick-up device for a semiconductor die according to claim 1, comprising: a slider having a pin extending in a width direction of the suction opening, and a slider driving mechanism provided inside the stage at the suction opening The extension direction slides 'and advances and retreats relative to the abutment surface; 37 200946427 The cover is provided with an arm extending outward from the front end to the side close to the suction opening, and the pin that is rotatably attached to the slider through the arm. 4. The semiconductor die pick-up device according to claim 2, wherein the slider is provided with a slider that is attached with a pin extending in a width direction of the suction opening, and the slider driving mechanism disposed inside the carrier is at the suction opening The extending direction slides 'and advances and retreats relative to the abutting surface; the cover is provided with an arm extending outward from the front end to the side close to the suction opening, and the pin that is rotatably attached to the slider through the arm. 5. The semiconductor die pick-up device of claim 3, which is provided with a sliding groove, the thickness of the recessed cover from the abutting surface, substantially the same width as the cover, and the suction opening end from the cover open side The outer peripheral side of the stage extends. When the cover slides, the rear end of the cover, that is, the cover open side end or the surface opposite to the side of the cover top holding piece slides to contact the surface thereof to slide. 6. The pick-up device for a semiconductor die according to claim 4, which is provided with a thick 纟 for sliding the cover from the close-fitting surface, substantially the same width as the cover, and is loaded from the suction opening end of the cover open side. The outer peripheral side of the table extends. When the cover slides, the rear end of the cover, that is, the cover open side end or the surface opposite to the side of the cover top holding piece slides to contact the surface thereof to slide. 7_ The pick-up device for a semiconductor die according to claim 5, wherein when the front end of the cover is advanced from the abutting surface, the surface of the cover from the top of the holding piece is inclined downward from the front end side to the rear end side of the cover. 8. The pick-up device for a semiconductor die according to claim 6, wherein when the front end of the cover is advanced from the abutting surface, the surface of the cap from the top of the holding piece is inclined downward from the front end side toward the rear end side. 38 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The surface of the front surface. The semiconductor chip pick-up device according to any one of the preceding claims, wherein, when the semiconductor die is picked up, one end of the picked semiconductor die is aligned with the front end of the closed state to make the width of the cover Direction position ❹ 與半導體阳粒之寬度方向位置一致，從拾取之半導體晶粒 之一端向另一端侧滑動蓋，依序開啟吸引開口，從拾取半 導體晶粒之-端侧向另—端侧，將保持片依序吸引至開啟 之吸引開Π ’從拾取之半導體晶粒依序剝離保持片，並且 從一端側向另—端侧依序吸附半導體晶粒至在拾取之半導 體晶粒之上方近處待機之筒夾。 η·如申請專利範圍第9項之半導體晶粒之拾取裝置， 其中，當拾取半導體晶粒時，將拾取之半導趙晶粒之一端 對準關閉狀態之蓋前端，使蓋 ^ ^便盍之寬度方向位置與半導體晶 粒之寬度方向位置一致 致從拾取之半導體晶粒之一端向另 一端側滑動蓋，依序開啟明以„ 碼门另 1 1 口，從拾取半導體晶粒之 端側向另一端側，蔣/姓 π，序吸引至開啟之吸㈣ 〇 I導體晶粒依序剝離保持片，並且從一端側 上二：序吸附半導體晶粒至在拾取之半導體晶= 上方近處待機之筒夾。 12'種半導體晶粒之拾取方法 裝置來拾取貼付於保持片之半導體 ，用 晶粒 半導體晶粒之拾取 ，·該半導體晶粒之 39 200946427 拾取裝置具備：載台，包含緊貼面，該緊貼面係緊貼於與 貼付有拾取之半導體晶粒之保持片之貼付有半導體晶粒的 面相反側的面’·設於緊貼面之吸引開口，1，設於載a， 以使關閉吸引開口之侧之前端能從緊贴面自由前進，产緊 貼面滑動以開閉吸引開σ，·以及用以吸附半導體晶粒之筒 夾；其特徵在於，具有： # ^準步冑將拾取之半導體晶粒之__端對準關閉狀態❹ In the width direction of the semiconductor positive particles, the cover is slid from one end of the picked semiconductor die to the other end, and the suction opening is sequentially opened, and the holding piece is picked up from the end side of the semiconductor die to the other end side. Succeeding in order to open the attraction opening Π 'From the picked semiconductor die, the holding piece is sequentially peeled off, and the semiconductor die is sequentially adsorbed from the one end side to the other end side to the vicinity of the picked semiconductor die. Collet. The semiconductor wafer pick-up device of claim 9, wherein when the semiconductor die is picked up, one end of the picked semiconductor semiconductor die is aligned with the front end of the closed state, so that the cover is pressed. The position in the width direction coincides with the position in the width direction of the semiconductor die, so that the cover is slid from one end of the semiconductor die to the other end side, and the opening is opened one by one, and the end side of the semiconductor die is picked up. To the other end side, Jiang/surname π, the order attracts to the open suction (4) 〇I conductor grain sequentially peels off the holding piece, and from the one end side two: sequentially adsorbs the semiconductor grain to the vicinity of the semiconductor crystal in the pickup Standby collet. 12's semiconductor die picking method device picks up the semiconductor attached to the holding chip, picks up the die with the die, and the semiconductor die 39 200946427 picking device has: a carrier, tight a veneer that is in close contact with a surface opposite to a surface on which a semiconductor die to which a semiconductor die to be picked up is attached, to which a semiconductor die is attached. , 1, is set on the a, so that the front end of the side closeing the suction opening can freely advance from the close surface, the sliding surface of the production surface is opened to close the suction opening σ, and the collet for adsorbing the semiconductor die; Having, #: 准步胄 aligns the __ end of the picked semiconductor die with the off state 之盍別端’使蓋之寬度方向位置與半導趙晶粒之寬度方向 位置一致；以及 "拾取步驟，使蓋前端從緊貼面前進，一邊頂起保持片 與半導體晶粒…邊從拾取之半導體晶粒之—端侧向另一 端側使蓋滑動’依序開啟吸引開°，從拾取之半導體晶粒 之一端側向另—端側，將保持片依序吸弓丨至開啟之吸引開 口’從拾取之半導體晶粒依序剝離保持片，並且從一端側 向另端側依序吸引半導體晶粒至在拾取之半導體晶粒之 上方近處待機之筒夾，以拾取半導體晶粒。 十一、明式： 如次頁 40At the end of the screen, the position of the width direction of the cover is aligned with the width direction of the semi-conductive Zhao die; and the "pickup step" advances the front end of the cover from the abutting surface while lifting the holding piece and the semiconductor die from the side The semiconductor die is picked up from the end side to the other end side to slide the cover to sequentially open the suction opening °, and from the end side of the picked semiconductor die to the other end side, the holding piece is sequentially sucked to the opening. The attracting opening 'seats the holding piece sequentially from the picked semiconductor die, and sequentially attracts the semiconductor die from the one end side to the other end side to the collet which is in the vicinity of the picked semiconductor die to pick up the semiconductor die . XI. Ming style: as the next page 40
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TWI475606B (en) * 2011-02-28 2015-03-01 Sandisk Semiconductor Shanghai Co Ltd Non-uniform vacuum profile die attach tip
TWI485786B (en) * 2012-04-16 2015-05-21 Gallant Micro Machining Co Ltd Grain Stripping Method and Device

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JP4397429B1 (en) 2009-03-05 2010-01-13 株式会社新川 Semiconductor die pickup apparatus and pickup method
CN108962807A (en) * 2018-09-07 2018-12-07 先进光电器材（深圳）有限公司 Automatic catching mechanism
CN113109357B (en) * 2021-04-09 2021-11-23 徐州盛科半导体科技有限公司 Detachable semiconductor analysis device

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JP4457715B2 (en) * 2003-04-10 2010-04-28 パナソニック株式会社 Chip pickup device and pickup method
JP3999744B2 (en) * 2004-01-05 2007-10-31 芝浦メカトロニクス株式会社 Semiconductor chip pickup device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475606B (en) * 2011-02-28 2015-03-01 Sandisk Semiconductor Shanghai Co Ltd Non-uniform vacuum profile die attach tip
US9038264B2 (en) 2011-02-28 2015-05-26 Sandisk Semiconductor (Shanghai) Co., Ltd. Non-uniform vacuum profile die attach tip
TWI485786B (en) * 2012-04-16 2015-05-21 Gallant Micro Machining Co Ltd Grain Stripping Method and Device

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