TW200943695A - Multi-linearity mode LNA having a deboost current path - Google Patents

Multi-linearity mode LNA having a deboost current path

Info

Publication number
TW200943695A
TW200943695A TW097151662A TW97151662A TW200943695A TW 200943695 A TW200943695 A TW 200943695A TW 097151662 A TW097151662 A TW 097151662A TW 97151662 A TW97151662 A TW 97151662A TW 200943695 A TW200943695 A TW 200943695A
Authority
TW
Taiwan
Prior art keywords
current path
cancel
path
deboost
current
Prior art date
Application number
TW097151662A
Other languages
English (en)
Inventor
Li-Chang Chang
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of TW200943695A publication Critical patent/TW200943695A/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3252—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using multiple parallel paths between input and output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
TW097151662A 2008-01-04 2008-12-31 Multi-linearity mode LNA having a deboost current path TW200943695A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/969,375 US7696828B2 (en) 2008-01-04 2008-01-04 Multi-linearity mode LNA having a deboost current path

Publications (1)

Publication Number Publication Date
TW200943695A true TW200943695A (en) 2009-10-16

Family

ID=40551396

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097151662A TW200943695A (en) 2008-01-04 2008-12-31 Multi-linearity mode LNA having a deboost current path

Country Status (7)

Country Link
US (1) US7696828B2 (zh)
EP (1) EP2243217A2 (zh)
JP (4) JP5237392B2 (zh)
KR (1) KR101126051B1 (zh)
CN (1) CN101939907B (zh)
TW (1) TW200943695A (zh)
WO (1) WO2009088813A2 (zh)

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US8903343B2 (en) * 2013-01-25 2014-12-02 Qualcomm Incorporated Single-input multiple-output amplifiers with independent gain control per output
US9350310B2 (en) * 2013-05-24 2016-05-24 Qualcomm Incorporated Receiver front end for carrier aggregation
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US9413296B2 (en) * 2014-04-04 2016-08-09 Qualcomm Incorporated Amplifier with enhanced linearity
US9723560B2 (en) 2014-05-22 2017-08-01 Qualcomm Incorporated Multi-stage amplifier with RC network
US9614541B2 (en) 2014-10-01 2017-04-04 The Trustees Of Columbia University In The City Of New York Wireless-transmitter circuits including power digital-to-amplitude converters
US9385901B2 (en) * 2014-11-13 2016-07-05 Qualcomm Incorporated Receiver front end architecture for intra band carrier aggregation
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US10003451B2 (en) * 2015-10-08 2018-06-19 Macom Technology Solutions Holdings, Inc. Dual-input, high power handling, power combining LNA for full duplex communications systems
US9813030B1 (en) * 2016-07-01 2017-11-07 Wais M. Ali Wideband single-ended IM3 distortion nulling
JP6623133B2 (ja) * 2016-09-05 2019-12-18 株式会社東芝 高周波半導体増幅回路
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US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
US10978583B2 (en) 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10418949B2 (en) * 2017-10-20 2019-09-17 Maxscend Microelectronics Company Limited Low noise amplifier and radio frequency amplification method using the same
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TW202245411A (zh) * 2020-12-31 2022-11-16 美商天工方案公司 不需使用開關之增益級退化電感器切換
CN113346847A (zh) * 2021-06-17 2021-09-03 西安电子科技大学重庆集成电路创新研究院 高线性度可变增益放大器
CN113556090A (zh) * 2021-07-28 2021-10-26 深圳昂瑞微电子技术有限公司 线性度优化电路以及包括其的低噪声放大器
CN116547907A (zh) * 2021-12-01 2023-08-04 华为技术有限公司 一种放大器及其控制方法、电子设备
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI625932B (zh) * 2016-03-14 2018-06-01 美國亞德諾半導體公司 寬頻放大器之有效線性化

Also Published As

Publication number Publication date
WO2009088813A2 (en) 2009-07-16
KR20100108583A (ko) 2010-10-07
JP5237392B2 (ja) 2013-07-17
JP5450774B2 (ja) 2014-03-26
KR101126051B1 (ko) 2012-03-29
US20090174481A1 (en) 2009-07-09
JP2011509048A (ja) 2011-03-17
CN101939907A (zh) 2011-01-05
WO2009088813A9 (en) 2010-05-14
WO2009088813A3 (en) 2009-09-03
JP5559290B2 (ja) 2014-07-23
EP2243217A2 (en) 2010-10-27
CN101939907B (zh) 2014-11-05
JP2013081200A (ja) 2013-05-02
JP5420747B2 (ja) 2014-02-19
JP2013081201A (ja) 2013-05-02
US7696828B2 (en) 2010-04-13
JP2013081202A (ja) 2013-05-02

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