TW200943695A - Multi-linearity mode LNA having a deboost current path - Google Patents

Multi-linearity mode LNA having a deboost current path

Info

Publication number
TW200943695A
TW200943695A TW097151662A TW97151662A TW200943695A TW 200943695 A TW200943695 A TW 200943695A TW 097151662 A TW097151662 A TW 097151662A TW 97151662 A TW97151662 A TW 97151662A TW 200943695 A TW200943695 A TW 200943695A
Authority
TW
Taiwan
Prior art keywords
current path
cancel
path
deboost
current
Prior art date
Application number
TW097151662A
Other languages
English (en)
Inventor
Li-Chang Chang
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of TW200943695A publication Critical patent/TW200943695A/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3252—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using multiple parallel paths between input and output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
TW097151662A 2008-01-04 2008-12-31 Multi-linearity mode LNA having a deboost current path TW200943695A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/969,375 US7696828B2 (en) 2008-01-04 2008-01-04 Multi-linearity mode LNA having a deboost current path

Publications (1)

Publication Number Publication Date
TW200943695A true TW200943695A (en) 2009-10-16

Family

ID=40551396

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097151662A TW200943695A (en) 2008-01-04 2008-12-31 Multi-linearity mode LNA having a deboost current path

Country Status (7)

Country Link
US (1) US7696828B2 (zh)
EP (1) EP2243217A2 (zh)
JP (4) JP5237392B2 (zh)
KR (1) KR101126051B1 (zh)
CN (1) CN101939907B (zh)
TW (1) TW200943695A (zh)
WO (1) WO2009088813A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI625932B (zh) * 2016-03-14 2018-06-01 美國亞德諾半導體公司 寬頻放大器之有效線性化

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936214B2 (en) * 2008-03-28 2011-05-03 Medtronic, Inc. Third order derivative distortion cancellation for ultra low power applications
US7936220B2 (en) * 2008-12-12 2011-05-03 Qualcomm, Incorporated Techniques for improving amplifier linearity
US7911269B2 (en) * 2009-01-19 2011-03-22 Qualcomm Incorporated Ultra low noise high linearity LNA for multi-mode transceiver
US8175568B2 (en) * 2009-03-24 2012-05-08 Qualcomm Incorporated Method of improving battery life
US7978011B1 (en) * 2009-04-09 2011-07-12 Zoran Corporation Systems and methods for mitigating distortion in single-ended amplifiers
US7948294B2 (en) * 2009-05-29 2011-05-24 Mediatek Inc. Mixer with high linearity
US8102213B2 (en) * 2009-07-23 2012-01-24 Qualcomm, Incorporated Multi-mode low noise amplifier with transformer source degeneration
US8242847B1 (en) 2009-08-05 2012-08-14 Marvell International Ltd. Method and apparatus for improving amplifier linearity
US8310312B2 (en) * 2009-08-11 2012-11-13 Qualcomm, Incorporated Amplifiers with improved linearity and noise performance
US9431975B2 (en) 2011-04-04 2016-08-30 The Trustees Of Columbia University In The City Of New York Circuits for providing class-E power amplifiers
DE102011002238A1 (de) * 2011-04-21 2012-10-25 Rheinisch-Westfälische Technische Hochschule Aachen Lineare Verstärkeranordnung für hochfrequente Signale
US8963613B2 (en) * 2011-08-11 2015-02-24 Qualcomm Incorporated Canceling third order non-linearity in current mirror-based circuits
US8400224B1 (en) * 2011-10-28 2013-03-19 Broadcom Corporation Programmable low noise amplifier and methods for use therewith
US8373503B1 (en) * 2011-12-12 2013-02-12 Linear Technology Corporation Third order intermodulation cancellation for RF transconductors
KR101387975B1 (ko) 2012-12-21 2014-04-24 연세대학교 산학협력단 저잡음 증폭기
US8903343B2 (en) * 2013-01-25 2014-12-02 Qualcomm Incorporated Single-input multiple-output amplifiers with independent gain control per output
US9350310B2 (en) 2013-05-24 2016-05-24 Qualcomm Incorporated Receiver front end for carrier aggregation
US9276532B2 (en) * 2013-08-28 2016-03-01 Analog Devices, Inc. High speed amplifier
US9271239B2 (en) * 2014-02-14 2016-02-23 Qualcomm Incorporated Current-efficient low noise amplifier (LNA)
US10063197B2 (en) 2014-03-05 2018-08-28 The Trustees Of Columbia University In The City Of New York Circuits for power-combined power amplifier arrays
US9413296B2 (en) 2014-04-04 2016-08-09 Qualcomm Incorporated Amplifier with enhanced linearity
US9723560B2 (en) 2014-05-22 2017-08-01 Qualcomm Incorporated Multi-stage amplifier with RC network
US9614541B2 (en) 2014-10-01 2017-04-04 The Trustees Of Columbia University In The City Of New York Wireless-transmitter circuits including power digital-to-amplitude converters
US9385901B2 (en) * 2014-11-13 2016-07-05 Qualcomm Incorporated Receiver front end architecture for intra band carrier aggregation
CN104579196B (zh) * 2015-01-28 2018-06-05 中国科学院微电子研究所 一种射频信号放大器
EP3254374B1 (en) * 2015-02-04 2019-01-16 Telefonaktiebolaget LM Ericsson (publ) High bandwidth amplifier
US10003451B2 (en) * 2015-10-08 2018-06-19 Macom Technology Solutions Holdings, Inc. Dual-input, high power handling, power combining LNA for full duplex communications systems
US9813030B1 (en) * 2016-07-01 2017-11-07 Wais M. Ali Wideband single-ended IM3 distortion nulling
JP6623133B2 (ja) * 2016-09-05 2019-12-18 株式会社東芝 高周波半導体増幅回路
TWI835693B (zh) * 2016-09-26 2024-03-11 美商天工方案公司 用於射頻應用之主輔場效電晶體組態
EP3346608B1 (en) 2017-01-09 2021-05-26 Nxp B.V. Rf amplifier
GB201701391D0 (en) * 2017-01-27 2017-03-15 Nordic Semiconductor Asa Radio receivers
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
US10978583B2 (en) * 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10418949B2 (en) * 2017-10-20 2019-09-17 Maxscend Microelectronics Company Limited Low noise amplifier and radio frequency amplification method using the same
WO2019221175A1 (ja) * 2018-05-17 2019-11-21 株式会社村田製作所 増幅回路
JP2020005177A (ja) 2018-06-29 2020-01-09 株式会社東芝 高周波増幅回路
US10541654B1 (en) * 2018-07-09 2020-01-21 Qualcomm Incorporated Amplification with post-distortion compensation
CN109474242A (zh) * 2018-09-26 2019-03-15 安徽矽芯微电子科技有限公司 一种毫米波低噪声放大器电路
KR102463983B1 (ko) * 2018-12-26 2022-11-07 삼성전자 주식회사 누설 전류를 차단하기 위한 증폭기 및 상기 증폭기를 포함하는 전자 장치
JP2020129721A (ja) 2019-02-07 2020-08-27 株式会社東芝 高周波増幅回路
CN110149096A (zh) * 2019-06-18 2019-08-20 杭州中科微电子有限公司 一种高线性度的低噪声放大器
US20220255519A1 (en) * 2020-12-31 2022-08-11 Skyworks Solutions, Inc. Gain stage degeneration inductor switching without the use of switches
CN113346847A (zh) * 2021-06-17 2021-09-03 西安电子科技大学重庆集成电路创新研究院 高线性度可变增益放大器
CN113556090A (zh) * 2021-07-28 2021-10-26 深圳昂瑞微电子技术有限公司 线性度优化电路以及包括其的低噪声放大器
CN116547907A (zh) * 2021-12-01 2023-08-04 华为技术有限公司 一种放大器及其控制方法、电子设备
US20230318556A1 (en) * 2022-03-31 2023-10-05 Mediatek Inc. Variable gain low noise amplifier and method for controlling gain of variable gain low noise amplifier
CN114710138B (zh) * 2022-06-08 2022-09-20 成都嘉纳海威科技有限责任公司 一种多通道放大衰减移相串口控制多功能芯片
US20230412135A1 (en) * 2022-06-17 2023-12-21 Apple Inc. Variable gain amplifier with subthreshold biasing
US20240072651A1 (en) * 2022-08-25 2024-02-29 Apple Inc. Power supply noise reduction by current cancellation circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791521A (en) * 1987-04-07 1988-12-13 Western Digital Corporation Method and apparatus for reducing transient noise by premagnetization of parasitic inductance
US6803824B2 (en) * 2001-12-18 2004-10-12 Anadigics, Inc. Dynamic matching in cascode circuits
JP2003283263A (ja) * 2002-03-26 2003-10-03 Sharp Corp 高周波増幅回路
JP3959371B2 (ja) * 2002-05-31 2007-08-15 株式会社東芝 可変インダクタ
US6781467B2 (en) 2003-01-24 2004-08-24 Qualcomm Incorporated High linearity low noise amplifier
US7853235B2 (en) 2004-02-11 2010-12-14 Qualcomm, Incorporated Field effect transistor amplifier with linearization
US7356317B2 (en) * 2004-07-14 2008-04-08 Silicon Storage Technology, Inc. Adaptive-biased mixer
KR100680302B1 (ko) 2004-12-20 2007-02-07 인티그런트 테크놀로지즈(주) 선형성 및 주파수대역이 향상된 멀티플 게이티드트랜지스터를 이용한 증폭회로.
JP2006295738A (ja) * 2005-04-13 2006-10-26 Matsushita Electric Ind Co Ltd 増幅器、及びそれを搭載する受信回路
KR100614928B1 (ko) * 2005-08-17 2006-08-25 삼성전기주식회사 선형화를 위한 미분 중첩회로
KR100813096B1 (ko) * 2005-08-17 2008-03-17 인티그런트 테크놀로지즈(주) 선형성이 향상된 증폭회로
US7788608B2 (en) * 2006-10-07 2010-08-31 Active-Semi, Inc. Microbump function assignment in a buck converter
JPWO2008102788A1 (ja) * 2007-02-20 2010-05-27 財団法人名古屋産業科学研究所 プログラマブル低雑音増幅装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI625932B (zh) * 2016-03-14 2018-06-01 美國亞德諾半導體公司 寬頻放大器之有效線性化

Also Published As

Publication number Publication date
JP2013081201A (ja) 2013-05-02
WO2009088813A2 (en) 2009-07-16
JP2013081200A (ja) 2013-05-02
WO2009088813A3 (en) 2009-09-03
US20090174481A1 (en) 2009-07-09
JP2011509048A (ja) 2011-03-17
CN101939907A (zh) 2011-01-05
KR20100108583A (ko) 2010-10-07
CN101939907B (zh) 2014-11-05
JP5237392B2 (ja) 2013-07-17
KR101126051B1 (ko) 2012-03-29
WO2009088813A9 (en) 2010-05-14
EP2243217A2 (en) 2010-10-27
JP5420747B2 (ja) 2014-02-19
JP2013081202A (ja) 2013-05-02
US7696828B2 (en) 2010-04-13
JP5559290B2 (ja) 2014-07-23
JP5450774B2 (ja) 2014-03-26

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