TW200943663A - A semiconductor integrated circuit - Google Patents

A semiconductor integrated circuit

Info

Publication number
TW200943663A
TW200943663A TW098102880A TW98102880A TW200943663A TW 200943663 A TW200943663 A TW 200943663A TW 098102880 A TW098102880 A TW 098102880A TW 98102880 A TW98102880 A TW 98102880A TW 200943663 A TW200943663 A TW 200943663A
Authority
TW
Taiwan
Prior art keywords
semiconductor chip
integrated circuit
semiconductor integrated
electronic components
end connected
Prior art date
Application number
TW098102880A
Other languages
Chinese (zh)
Inventor
Hidenori Tanaka
Kohei Shibata
Original Assignee
Mitsumi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Publication of TW200943663A publication Critical patent/TW200943663A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/46—Accumulators structurally combined with charging apparatus
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Abstract

This invention is a semiconductor integrated circuit with a reduced number of electronic components, and a reduced production cost, and a reduced installation surface area. A single semiconductor chip is packaged, or a single semiconductor chip along with its surrounding electronic components all together is installed onto a substrate. The semiconductor integrated circuit that is molded by an insulating material has a current limiting resistor (R10) inside the aforementioned semiconductor chip having one end connected to an external terminal of the semiconductor chip and the other end connected to a diode (D1) for electrostatic protection; and a fuse (FS) inside the aforementioned semiconductor chip in parallel between the two ends of the current limiting resistor (R10).
TW098102880A 2008-02-05 2009-01-23 A semiconductor integrated circuit TW200943663A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008025286A JP5286809B2 (en) 2008-02-05 2008-02-05 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
TW200943663A true TW200943663A (en) 2009-10-16

Family

ID=40977116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098102880A TW200943663A (en) 2008-02-05 2009-01-23 A semiconductor integrated circuit

Country Status (4)

Country Link
JP (1) JP5286809B2 (en)
KR (1) KR101028784B1 (en)
CN (1) CN101504943B (en)
TW (1) TW200943663A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103023005A (en) * 2012-11-30 2013-04-03 无锡中星微电子有限公司 Electrostatic protection circuit and battery protection circuit
US9940986B2 (en) 2015-12-16 2018-04-10 Globalfoundries Inc. Electrostatic discharge protection structures for eFuses

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102397624A (en) * 2010-09-17 2012-04-04 鼎迈医疗科技(苏州)有限公司 Implantable active electronic device with overcurrent protection circuit and electric stimulation system
CN103378070B (en) * 2012-04-16 2016-04-13 富士电机株式会社 Semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2563783B2 (en) * 1986-10-22 1996-12-18 セイコーエプソン株式会社 Static electricity protection circuit
JPH09219521A (en) * 1997-03-24 1997-08-19 Seiko Epson Corp Semiconductor device
JP2001189428A (en) * 1999-10-19 2001-07-10 Citizen Watch Co Ltd Protective circuit of semiconductor integrated circuit
KR100450181B1 (en) * 2002-04-15 2004-09-24 삼성에스디아이 주식회사 A battery pack having a second protection circuit isolated spatially
JP3958269B2 (en) * 2003-09-09 2007-08-15 日本テキサス・インスツルメンツ株式会社 Demodulator and data recording apparatus having the same
JP4046106B2 (en) * 2004-06-16 2008-02-13 株式会社村田製作所 Battery pack protection circuit and battery pack
JP2006073553A (en) * 2004-08-31 2006-03-16 Nec Electronics Corp Fuse trimming circuit
JP2007088192A (en) * 2005-09-22 2007-04-05 Sanyo Electric Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103023005A (en) * 2012-11-30 2013-04-03 无锡中星微电子有限公司 Electrostatic protection circuit and battery protection circuit
CN103023005B (en) * 2012-11-30 2015-02-04 无锡中星微电子有限公司 Electrostatic protection circuit and battery protection circuit
US9940986B2 (en) 2015-12-16 2018-04-10 Globalfoundries Inc. Electrostatic discharge protection structures for eFuses

Also Published As

Publication number Publication date
KR20090086019A (en) 2009-08-10
JP5286809B2 (en) 2013-09-11
CN101504943B (en) 2012-07-04
KR101028784B1 (en) 2011-04-14
CN101504943A (en) 2009-08-12
JP2009189127A (en) 2009-08-20

Similar Documents

Publication Publication Date Title
TW200613897A (en) Photosensitive dielectric resin compositions, films formed therefrom and semiconductor and display devices encompassing such films
WO2009060607A1 (en) Circuit protective device and method for manufacturing the same
DK1956647T3 (en) Circuit arrangement with connecting device and method for making it
IN2012DN03163A (en)
EP1662564A4 (en) Semiconductor package and manufacturing method thereof
TW200727756A (en) Circuit board and electronic assembly
WO2012120032A3 (en) Assembly having a substrate, an smd component, and a lead frame part
DK1868243T3 (en) Power semiconductor module with electrically isolated connection elements
TW200735301A (en) Integrated circuit package system with die on base package
TW200605279A (en) Semiconductor device and manufacturing method thereof
IN2012DN05096A (en)
TW200943663A (en) A semiconductor integrated circuit
ATE554486T1 (en) CERAMIC CHIP ARRANGEMENT
WO2012148644A3 (en) Conductive polymer fuse
TWI373116B (en) Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire
HK1130946A1 (en) Method for manufacturing a semiconductor component and structure therefor
ATE462194T1 (en) FUSE FOR A CHIP
WO2014139666A8 (en) Electronic sub-assembly, method for the production thereof and printed circuit board having an electronic sub-assembly
MY176260A (en) Rfid transponder antenna
MY144739A (en) Epoxy resin composition for encapsulating semiconductor and semiconductor device
WO2009157689A3 (en) Light emitting device package
WO2009001554A1 (en) Circuit device
TW200637901A (en) Flame-retardant curing agent containing phosphorus and its manufacturing method
TW200737641A (en) Mounting structure providing electrical surge protection
WO2013156568A3 (en) Circuit arrangement for thermally conductive chip assembly and production method