CN103023005B - Electrostatic protection circuit and battery protection circuit - Google Patents
Electrostatic protection circuit and battery protection circuit Download PDFInfo
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- CN103023005B CN103023005B CN201210502023.3A CN201210502023A CN103023005B CN 103023005 B CN103023005 B CN 103023005B CN 201210502023 A CN201210502023 A CN 201210502023A CN 103023005 B CN103023005 B CN 103023005B
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Abstract
The invention provides an electrostatic protection circuit and a battery protection circuit. The electrostatic protection circuit of an integrated circuit is characterized in that the integrated circuit is provided with a first connecting end and a second connecting end, the electrostatic protection circuit comprises an electrostatic protection device which is connected with the first connecting end and the second connecting end and comprises a buried layer, a P-well positioned above the buried layer, a N-well positioned above the buried layer and adjacent to the P-well, a first injection region formed through injection at the upper part of the P-well and a second injection region formed through injection at the upper end of the N-well, wherein the first injection region is connected with the first connecting end, and the second injection region is connected with the second connecting end. The electrostatic protection circuit has the advantage that the electrostatic protection device in the battery protection circuit is prevented from being burned up when a charger is reversely connected.
Description
[technical field]
The present invention relates to circuit design field, particularly a kind of electrostatic discharge protective circuit and battery protecting circuit thereof.
[background technology]
Fig. 1 shows a kind of structure chart of battery protection system.As shown in Figure 1, described battery protection system comprises battery battery core Bat, resistance R1, electric capacity C1, battery protecting circuit 110, resistance R2, charge power switch 130 and discharge power switch 120.Resistance R1 and electric capacity C1 is series between the positive pole B+ of battery battery core Bat and negative pole B-, charge power switch and discharge power switch series are coupled between the negative pole B-of battery battery core and the negative pole P-of battery, and the positive pole B+ of battery battery core Bat is directly and between the positive pole P+ of battery.
Described discharge power switch comprises NMOS (N-channel Metal Oxide Semiconductor) field effect transistor M N1 and parasitizes the diode D1 in its body.Described charge power switch comprises nmos fet MN2 and parasitizes the diode D2 in its body.The drain electrode of nmos pass transistor MN1 is connected with the drain electrode of nmos pass transistor MN2, and the source electrode of nmos pass transistor MN1 is connected with the negative pole B-of battery battery core, and the source electrode of nmos pass transistor MN2 is connected with the negative pole P-of battery.
Described battery protecting circuit 110 comprises three links (or being called test side) and two control ends; three links are respectively battery battery core positive pole B+ link (or claiming power end) VDD; battery battery core negative pole B-link VSS and battery cathode P-link VM, two control ends are respectively charging control end COUT and control of discharge end DOUT.Wherein link VDD is connected between resistance R1 and electric capacity C1, and link VSS is connected with the negative pole B-of battery battery core, and link VM is connected to the negative pole P-of battery by resistance R2, charging control end C
oUTbe connected with the control end of charge power switch 130, i.e. the grid of nmos pass transistor MN2, control of discharge end D
oUTbe connected with the control end of discharge power switch 120, i.e. the grid of nmos pass transistor MN1.
Described battery protecting circuit 110 can carry out charge protection and discharge prevention to battery battery core Bat.When charging normal, described battery protecting circuit 110 controls nmos pass transistor MN2 conducting, and nmos pass transistor MN1 ends, and charging current flows to nmos pass transistor MN2 from the body diode D1 of nmos pass transistor MN1.When generation of charging abnormal (such as charge overcurrent and charging overvoltage), described battery protecting circuit 110 controls nmos pass transistor MN2 to be ended, thus has cut off charging process.When carrying out regular picture, described battery protecting circuit 110 controls nmos pass transistor MN2 to be ended, and nmos pass transistor MN1 conducting, discharging current flows to nmos pass transistor MN1 from the body diode D2 of nmos pass transistor MN2.When generation of discharging abnormal (such as discharge overcurrent and electric discharge overvoltage), described battery protecting circuit 110 controls nmos pass transistor MN1 to be ended, thus has cut off discharge process.
Electrostatic defending, concerning extremely important integrated circuit, has carried out much research in industrial quarters.No matter the normal use at electronic equipment, fortune elm and stock, and all likely there is static discharge at the various integrated circuit component of production assembling.These static discharges being difficult to correct prediction and strick precaution can damage integrated circuit, produce fraction defective, even cause huge loss.The design of ESD protection circuit all can be paid special attention in current integrated circuit (IC) design with when manufacturing.ESD protection circuit is normally connected between two different pins, in parallel with internal circuit.Along with the electrostatic charge at ESD protection circuit two ends constantly accumulates; the voltage at these two ends will constantly increase; once reach the activation discharge threshold of ESD protection circuit, ESD protection circuit just starts bleed off electrostatic, thus realizes the function of protection internal circuit.Activation discharge threshold described here is puncture voltage (breakdown voltage) for most prior art.
Usually, the battery protecting circuit 110 in Fig. 1 is chip pieces, also needs to arrange electrostatic discharge protective circuit (ESD) between its each link.Especially, between power end VDD and battery cathode link VM, be also provided with electrostatic protection device as shown in Figure 2.As shown in Figure 2, described electrostatic protection device comprise n type buried layer DN, be positioned at P trap PWELL above n type buried layer DN, be positioned at be clipped in the middle above n type buried layer and by P trap PELL two N trap NWELL, to inject on the top of P trap PWELL formed N-type injection region N_implant and P type injection region P_implant, inject the N-type injection region N_implant formed on the top of N trap.N_implant is that the degree of depth is more shallow but the N-type that concentration is higher is injected, and P_implant is that the degree of depth is more shallow but the P type that concentration is higher injects.
As shown in Figure 2; the N-type injection region on P trap top is all connected with link VM with P type injection region; the N-type injection region on N trap top is connected with power end VDD; electrostatic protection device in Fig. 2 is a triode; wherein NWELL forms collector electrode; P type injection region P_implant and P trap PWELL forms base stage, and N-type injection region N_implant forms emitter-base bandgap grading.When there is electrostatic between VDD and VM, this triode is breakdown thus provide the big current path of Electro-static Driven Comb.
But as shown in Figure 3, this electrostatic protection device can form a parasitic diode ESD-Diode, it is made up of the PN junction of P trap PWELL and N trap NWELL.Because this diode belongs to Electro-static Driven Comb discharge path; so the electric current that this parasitic diode is flow through in current-limiting resistance restriction can not be increased in battery protecting circuit; if charger polarity connects instead in battery applications; battery cathode P-end can be drawn high by charger and hold higher than P+; when VM voltage is higher than VDD; having very big current and flow through this parasitic diode, cause battery protecting circuit chip to burn, burning out or operation irregularity for preventing battery protecting circuit chip.Battery protection industry generally limits P-current potential higher than the electric current flowing into battery protecting circuit chip during P+ current potential from VM end by external current-limiting resistance R2.
Like this, in application circuit, just adds additional a discrete device resistance, add system cost.Therefore be necessary to provide a kind of technical scheme of improvement to overcome the problems referred to above.
[summary of the invention]
The object of the present invention is to provide a kind of electrostatic discharge protective circuit and apply the battery protecting circuit chip of this electrostatic discharge protective circuit, the electrostatic protection device burnt during charger reversal connection in battery protecting circuit can be prevented.
In order to solve the problem, according to an aspect of the present invention, the invention provides a kind of electrostatic discharge protective circuit of integrated circuit, described integrated circuit has the first link and the second link, described electrostatic discharge protective circuit comprises the electrostatic protection device being connected to the first link and the second link, this electrostatic protection device comprises buried regions, be positioned at the P trap above buried regions, be positioned at N trap above buried regions and adjacent with P trap, inject the first injection region formed on the top of P trap and inject the second injection region formed on the top of N trap, wherein the first injection region is connected with the first link, second injection region is connected with the second link.
Further, buried regions is N-type, and the first injection region and the second injection region are N-type, described N trap is two, P trap is clipped in the middle by two N traps, and the top of each N trap is formed with the second injection region, and the N-type doping content of N-type injection region is high compared with the N-type doping content of N trap.
Further; when having electrostatic between the first link and the second link; described electrostatic protection device provides the path of the electrostatic leakage between the first link and the second link; this electrostatic protection device forms the first parasitic diode and the second parasitic diode; wherein the negative electrode of the first parasitic diode is connected with the second link; the anode of the first parasitic diode is connected with the anode of the second parasitic diode, and the negative electrode of the second parasitic diode is connected with the first link.
Further, buried regions is P type, and the first injection region and the second injection region are P type, described P trap is two, N trap is clipped in the middle by two P traps, and the top of each P trap is formed with the first injection region, and the P type doping content of P type injection region is high compared with the P type doping content of P trap.
Further; when having electrostatic between the first link and the second link; described electrostatic protection device provides the path of the electrostatic leakage between the first link and the second link; this electrostatic protection device forms the first parasitic diode and the second parasitic diode; wherein the anode of the first parasitic diode is connected with the first link; the negative electrode of the first parasitic diode is connected with the negative electrode of the second parasitic diode, and the anode of the second parasitic diode is connected with the second link.
According to a further aspect in the invention, the invention provides a kind of battery protecting circuit, it comprises the battery cathode link VM be connected with battery cathode, the battery battery core negative pole link VSS be connected with battery battery core negative pole, power end VDD, the control of discharge end be connected with the control end of discharge power switch and the charging control end be connected with the control end of charge power switch, it also comprises the electrostatic protection device as described in be connected between battery cathode link VM and power end VDD as arbitrary in claim 1-5, wherein said battery cathode link VM is the first link, described power end VDD is the second link.
Further, described battery protecting circuit also comprises control circuit and is connected on the discharge path between battery cathode link VM and battery battery core negative pole link VSS, this discharge path comprises switching device, diode and resistance R0, after entering electric discharge overcurrent protection state, described control circuit controls described switch device conductive to make the discharge path conducting between battery cathode link and battery battery core negative pole link, described control circuit determines whether to exit electric discharge overcurrent protection state according to the voltage of battery cathode link, after determining to exit electric discharge overcurrent protection state, described control circuit controls the cut-off of described switching device to make the discharge path between battery cathode link and battery battery core negative pole link end.
Further, the negative electrode of described diode connects a link of described switching device, the anode of described diode is connected with described battery cathode link, another link of described switching device is connected with described battery battery core negative pole link, and described discharge path provides milliampere rank and following electric current.
Further; under electric discharge overcurrent protection state; when the voltage of described battery cathode link is lower than predetermined voltage threshold; described control circuit is determined to exit electric discharge overcurrent protection state, and described control circuit determines whether to enter electric discharge overcurrent protection state according to the pressure reduction between battery cathode link and battery battery core negative pole link.
Further, described switching device is nmos fet, and described control circuit outputs control signals to the grid of described nmos fet.
Compared with prior art; electrostatic protection device in the present invention is formed with the contrary series diode in two positively biased directions; these two diodes ensure normal working voltage respectively; and the withstand voltage and anti-creeping ability of battery protecting circuit chip during reversal connection charger, can save in battery protecting circuit chip application circuit external to the resistance of link VM like this.
[accompanying drawing explanation]
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.Wherein:
Fig. 1 is the structural representation of battery protecting circuit system;
Fig. 2 is the structural representation of existing electrostatic protection device;
Fig. 3 is the structural representation of the parasitic diode of electrostatic protection device in Fig. 2;
Fig. 4 is the structural representation of the electrostatic protection device in one embodiment of the present of invention;
Fig. 5 is the structural representation of the parasitic diode of electrostatic protection device in Fig. 4;
Fig. 6 is the structural representation of the electrostatic protection device in an alternative embodiment of the invention;
Fig. 7 is the structural representation of the parasitic diode of electrostatic protection device in Fig. 6;
Fig. 8 is the topology example figure of the electric discharge overcurrent self-repairing circuit in the battery protecting circuit in Fig. 1.
[embodiment]
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Alleged herein " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the present invention.Different local in this manual " in one embodiment " occurred not all refers to same embodiment, neither be independent or optionally mutually exclusive with other embodiments embodiment.Unless stated otherwise, connection herein, be connected, word that the expression that connects is electrically connected all represents and is directly or indirectly electrical connected.
Fig. 4 is the structural representation of the electrostatic protection device in one embodiment of the present of invention.As shown in the figure, this electrostatic protection device comprises n type buried layer DN, be positioned at the P trap PWELL above n type buried layer DN, to be positioned at above n type buried layer and to clamp two N trap NWELL of P trap PWELL, the N-type injection region N_implant (or claiming the first injection region) formed and the N-type injection region N_implant (or claiming the second injection region) injecting formation on the top of N trap NWELL is injected on the top of P trap PWELL, N-type injection region wherein in N trap is connected with the power end VDD of the battery protecting circuit chip in Fig. 1, N-type injection region in P trap is connected with the link VM of the battery protecting circuit chip in Fig. 1.N_implant is that the degree of depth is more shallow but the N-type that concentration is higher is injected.
Can see; relative to the scheme of the electrostatic protection device of Fig. 2; Fig. 4 eliminates the P type injection region P_implant in P trap PWELL; such way, while retaining the NPN audion that electrostatic protection device needs, makes to define between power end VDD to link VM the structure that two diodes are connected back-to-back.Shown in Figure 4 and 5, P trap PWELL to N trap NWELL defines the first parasitic diode ESD_diode1 in Fig. 5, and N-type injection region N_implant to the P trap PWELL in PWELL defines second parasitic diode ESD_diode2 in Fig. 5.
In conjunction with reference to shown in figure 1 and 5, on the Electro-static Driven Comb path of power end VDD to link VM, design ESD device structure as shown in Figure 4, so both can ensure to form Electro-static Driven Comb path between power end VDD to link VM, it can be made again to form the contrary series diode in two positively biased directions, wherein the negative electrode of the first parasitic diode ESD_diode1 is connected with power end VDD, the anode of the first parasitic diode ESD_diode1 is connected with the anode of the second parasitic diode ESD_diode2, the negative electrode of the second parasitic diode ESD_diode2 is connected with link VM, two diodes ensure normal working voltage respectively, and the ability of the withstand voltage and anti-leak source of chip during reversal connection charger, can save in the application circuit as the battery protecting circuit chip in Fig. 1 external to the resistance R2 of link VM like this.
Fig. 6 is the structural representation of the electrostatic protection device in an alternative embodiment of the invention.As shown in the figure, this electrostatic protection device comprises p type buried layer DP, be positioned at the N trap NWELL above p type buried layer DP, to be positioned at above p type buried layer and to clamp two P trap PWELL of N trap NWELL, the P type injection region P_implant (or claiming the first injection region) formed and the P type injection region P_implant (or claiming the second injection region) injecting formation on the top of N trap NWELL is injected on the top of P trap PWELL, P type injection region wherein in P trap is connected with the link VM of the battery protecting circuit chip in Fig. 1, P type injection region in N trap is connected with the power end VDD of the battery protecting circuit chip in Fig. 1.P_implant is that the degree of depth is more shallow but the P type that concentration is higher injects.
Shown in composition graphs 6 and 7, N trap NWELL to P trap PWELL defines the first parasitic diode ESD_diode1 in Fig. 7, and P type injection region P_implant to the N trap NWELL in NWELL defines second parasitic diode ESD_diode2 in Fig. 7.
In conjunction with reference to shown in figure 1 and 7, on the Electro-static Driven Comb path of power end VDD to link VM, design ESD device structure as shown in Figure 6, so both can ensure to form Electro-static Driven Comb path between power end VDD to link VM, it can be made again to form the contrary series diode in two positively biased directions, wherein the anode of the first parasitic diode ESD_diode1 is connected with link VM, the negative electrode of the first parasitic diode ESD_diode1 is connected with the negative electrode of the second parasitic diode ESD_diode2, the anode of the second parasitic diode ESD_diode2 is connected with power end VDD, two diodes ensure normal working voltage respectively, and the ability of the withstand voltage and anti-leak source of chip during reversal connection charger, can save in the application circuit as the battery protecting circuit chip in Fig. 1 external to the resistance R2 of link VM like this.
Belonging to those of ordinary skill in field it is understood that the electrostatic protection device in Fig. 4 and Fig. 6 can also be used for carrying out electrostatic protection in other integrated circuits or chip, between its any two pins that can be connected to chip or link.
Except the change of electrostatic protection device, the battery protecting circuit in the present invention also has other improvement, hereafter will describe in detail.
Please refer to shown in Fig. 1, the annexation etc. of wherein each part had all described in background, no longer repeated description here.When discharging, battery protecting circuit 110 judges whether by the pressure reduction between link VM (i.e. the negative pole P-of battery) and VSS (i.e. the negative pole B-of battery battery core) overcurrent that discharges.The now voltage held higher than VSS of voltage of VM end, and pressure reduction between the two and discharging current proportion relation.If differential pressure exceedes predetermined voltage threshold, then think that discharging current exceedes predetermined current threshold, then star t-up discharge overcurrent protection function, by control of discharge end D
oUTbe pulled down to the negative pole B-current potential of battery battery core, forbid that described discharge power switch 120 discharges.When the reason of the overcurrent that discharges is eliminated, wish that described battery protecting circuit 110 can detect automatically, and automatically recover from electric discharge over-current state.
In the present invention; as shown in Figure 8; described battery protecting circuit 110 comprises control circuit and is arranged at the discharge path between link VM and link VSS, and described discharge path comprises the resistance R0, diode D0 and the switching device MN0 that are connected to successively between link VM and link VSS.Described control circuit judges whether according to the pressure reduction between link VM (i.e. the negative pole P-of battery) and VSS (i.e. the negative pole B-of battery battery core) overcurrent that discharges; when electric discharge overcurrent being detected; forbid that discharge power switch 120 discharges; so just enter electric discharge overcurrent protection state; meanwhile; it also controls described switching device MN0 conducting, makes the discharge path conducting between link VM and link VSS like this.
When discharging overcurrent protection, the load between the both positive and negative polarity P+/P-of battery can negative pole P-voltage high to the current potential close to positive pole P+, and the voltage of such VM end can higher than the voltage of VSS end.And in the present invention; be provided with the path between link VM and VSS of a conducting under electric discharge over-current state; like this under discharge prevention state; link VSS provides a pull-down current to link VM; once the reason of electric discharge overcurrent is eliminated; such as short circuit is eliminated, and the voltage of link VM will be dragged down.Therefore, described control circuit determines whether to exit electric discharge overcurrent protection state according to the voltage of link VM in the present invention.If when under electric discharge over-current state, the voltage of link VM is lower than predetermined voltage threshold, described control circuit then determines to exit electric discharge overcurrent protection state, controls described discharge power switch 120 and recovers regular picture, otherwise continues to keep electric discharge overcurrent protection state.After described control circuit 210 determines to exit electric discharge overcurrent protection state, control described switching device MN0 and end, make the discharge path between link VM and link VSS end like this, and prevent electric leakage.
In order to reduce power consumption, under electric discharge overcurrent protection state, the pull-down current flowing to link VSS from link VM is very little, is the electric current of milliampere and following rank, can be regulated the size of described pull-down current in the present invention by the size arranging resistance R0.
The negative electrode of described diode D0 connects a link of described switching device MN0, and described anode is connected with link VM, and another link of described switching device MN0 is connected with link VSS.
In one embodiment, as shown in Figure 2, described switching device MN0 is nmos fet, and its grid connects described control circuit, and described control circuit exports conducting and the cut-off that control signal S1 controls described switching device MN0.When entering electric discharge overcurrent protection state, control switch device MN0 conducting, when exiting electric discharge over-current state, control switch device MN0 ends.Diode D0 is used for allowing link VM unidirectional by electric current to link VSS, stops VSS to leak electricity to VM, and utilizes the reverse voltage endurance capability of diode D0 at VM voltage lower than most pressure drops of bearing VM to VSS during VSS.Resistance R0 also can be positioned between MN0 and diode D0, can also be positioned between MN0 and VSS.
In the present invention, " connection ", " being connected ", " company ", " connecing " etc. represent the word be electrically connected, and if no special instructions, then represent direct or indirect electric connection.
It is pointed out that the scope be familiar with person skilled in art and any change that the specific embodiment of the present invention is done all do not departed to claims of the present invention.Correspondingly, the scope of claim of the present invention is also not limited only to previous embodiment.
Claims (10)
1. the electrostatic discharge protective circuit of an integrated circuit; described integrated circuit has the first link and the second link; it is characterized in that; described electrostatic discharge protective circuit comprises the electrostatic protection device being connected to the first link and the second link; this electrostatic protection device comprises buried regions, be positioned at P trap above buried regions, be positioned at N trap above buried regions and adjacent with P trap, inject the first injection region of being formed on the top of P trap and inject the second injection region formed on the top of N trap
Wherein the first injection region is connected with the first link, and the second injection region is connected with the second link,
This electrostatic protection device forms the first parasitic diode and the second parasitic diode,
Wherein the negative electrode of the first parasitic diode is connected with the second link, and the anode of the first parasitic diode is connected with the anode of the second parasitic diode, and the negative electrode of the second parasitic diode is connected with the first link; Or the anode of the first parasitic diode is connected with the first link, the negative electrode of the first parasitic diode is connected with the negative electrode of the second parasitic diode, and the anode of the second parasitic diode is connected with the second link.
2. electrostatic discharge protective circuit according to claim 1; it is characterized in that; buried regions is N-type; first injection region and the second injection region are N-type; described N trap is two; P trap is clipped in the middle by two N traps, and the top of each N trap is formed with the second injection region, and the N-type doping content of N-type injection region is high compared with the N-type doping content of N trap.
3. electrostatic discharge protective circuit according to claim 2, is characterized in that, when having electrostatic between the first link and the second link, described electrostatic protection device provides the path of the electrostatic leakage between the first link and the second link.
4. electrostatic discharge protective circuit according to claim 1, is characterized in that, buried regions is P type, and the first injection region and the second injection region are P type, and described P trap is two, and N trap is clipped in the middle by two P traps,
The top of each P trap is formed with the first injection region, and the P type doping content of P type injection region is high compared with the P type doping content of P trap.
5. electrostatic discharge protective circuit according to claim 4, is characterized in that, when having electrostatic between the first link and the second link, described electrostatic protection device provides the path of the electrostatic leakage between the first link and the second link.
6. a battery protecting circuit; it charging control end comprising the battery cathode link VM be connected with battery cathode, battery battery core negative pole link VSS, the power end VDD be connected with battery battery core negative pole, the control of discharge end be connected with the control end of discharge power switch and be connected with the control end of charge power switch
It is characterized in that, it also comprises the electrostatic protection device as described in be connected between battery cathode link VM and power end VDD as arbitrary in claim 1-5, and wherein said battery cathode link VM is the first link, and described power end VDD is the second link.
7. battery protecting circuit according to claim 6; it is characterized in that; it also comprises control circuit and is connected on the discharge path between battery cathode link VM and battery battery core negative pole link VSS, this discharge path comprises switching device, diode and resistance R0
After entering electric discharge overcurrent protection state, described control circuit controls described switch device conductive to make the discharge path conducting between battery cathode link and battery battery core negative pole link,
Described control circuit determines whether to exit electric discharge overcurrent protection state according to the voltage of battery cathode link; after determining to exit electric discharge overcurrent protection state, described control circuit controls the cut-off of described switching device to make the discharge path between battery cathode link and battery battery core negative pole link end.
8. battery protecting circuit according to claim 7; it is characterized in that; the negative electrode of described diode connects a link of described switching device; the anode of described diode is connected with described battery cathode link; another link of described switching device is connected with described battery battery core negative pole link, and described discharge path provides milliampere rank and following electric current.
9. battery protecting circuit according to claim 7; it is characterized in that; under electric discharge overcurrent protection state; when the voltage of described battery cathode link is lower than predetermined voltage threshold; described control circuit is determined to exit electric discharge overcurrent protection state, and described control circuit determines whether to enter electric discharge overcurrent protection state according to the pressure reduction between battery cathode link and battery battery core negative pole link.
10. battery protecting circuit according to claim 7, is characterized in that, described switching device is nmos fet, and described control circuit outputs control signals to the grid of described nmos fet.
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| CN201210502023.3A CN103023005B (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit |
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| CN201210502023.3A CN103023005B (en) | 2012-11-30 | 2012-11-30 | Electrostatic protection circuit and battery protection circuit |
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| CN103023005B true CN103023005B (en) | 2015-02-04 |
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| CN106849290A (en) * | 2017-04-19 | 2017-06-13 | 成都市智合微电子有限公司 | A kind of battery protecting circuit and lithium battery circuit |
| CN110048478B (en) * | 2019-04-22 | 2024-05-17 | 上海芯荃微电子科技有限公司 | Emergency power supply driving circuit with reverse connection protection |
| CN112532219A (en) * | 2020-11-27 | 2021-03-19 | 广州极飞科技有限公司 | Bidirectional current control method and circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200943663A (en) * | 2008-02-05 | 2009-10-16 | Mitsumi Electric Co Ltd | A semiconductor integrated circuit |
| CN203205856U (en) * | 2012-11-30 | 2013-09-18 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit thereof |
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| KR20100079083A (en) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | Device of protecting semiconductor device from the electro static discharge, and method for manufactruing the device |
| JP5603277B2 (en) * | 2011-03-29 | 2014-10-08 | セイコーインスツル株式会社 | ESD protection circuit for semiconductor integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200943663A (en) * | 2008-02-05 | 2009-10-16 | Mitsumi Electric Co Ltd | A semiconductor integrated circuit |
| CN203205856U (en) * | 2012-11-30 | 2013-09-18 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit thereof |
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