CN103474967A - Highly-integrated battery protection circuit - Google Patents
Highly-integrated battery protection circuit Download PDFInfo
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- CN103474967A CN103474967A CN2012101862942A CN201210186294A CN103474967A CN 103474967 A CN103474967 A CN 103474967A CN 2012101862942 A CN2012101862942 A CN 2012101862942A CN 201210186294 A CN201210186294 A CN 201210186294A CN 103474967 A CN103474967 A CN 103474967A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Abstract
The invention relates to a battery protection circuit and particularly relates to a highly-integrated battery protection circuit having a protective switching tube capable of automatically breaking the connection between a battery and a charger when over charge, over discharge or over current occurs. The highly-integrated battery protection circuit comprises a master switching tube, a master switching tube grid control circuit, a master switching tube substrate control circuit, an alteration countermeasure circuit, a status initialization circuit and a section converting circuit, which are all integrated on a same semi-conductor substrate. The battery protection scheme provided by the invention not only decreases scheme area greatly, but also reduces chip cost, packaging cost and printed circuit board cost, the highly-integrated battery protection circuit has no yield cost, and low cost and high integration are truly realized.
Description
Technical field
The present invention relates to battery protecting circuit, relate in particular to and there is the highly integrated battery protection circuit that overcharges, automatically cuts off when overdischarge, overcurrent the protection switch pipe that battery is connected with charger.
Background technology
The secondary cells such as lithium battery owing to overcharging, the abnormality such as overdischarge, overcurrent and deleterious effects battery life sharply.Usually protect under these abnormalities the damage to battery by battery protecting apparatus.
Current battery protecting apparatus, as shown in Fig. 1 embodiment, is mainly to realize by traditional battery protection control chip 092 and the method for external discharge switch 093 and charge switch 094.This device needs 092,2 switching tube 095 of 1 battery protection controller (in order to reduce internal resistance, normally two NMOS pipes are integrated in same chip), 2 outer meeting resistances and 1 external capacitor.This device needs many peripheral components, and not only the scheme Area comparison is large, and takies more printed circuit board (PCB) (PCB), makes the PCB cost higher, adds controller and 2 switching tubes not in same chip, needs 2 packaging costs.Segmentation scheme is also arranged at present as shown in Fig. 2 embodiment, in order to reduce peripheral components quantity, reduce the scheme area, reduce total packaging cost, by the multi-chip package technology, controller chip 092 is become to a chip 096 together with 2 peripheral switching tube 095 chip packages.Although this scheme is reduced to once encapsulation by twice encapsulation, reduced to a certain extent packaging cost, but two chips come from different technique, different producers, wherein the inefficacy of any one chip will cause the inefficacy of whole product, even another chip is non-defective unit.Thereby this scheme has increased the yield cost.Although this scheme scheme area decreases, total cost might not reduce.
Summary of the invention
In view of the above problems, the object of the invention be to provide a kind of can the protection exception state under the low cost damaged of battery and the highly integrated battery protection circuit of high integration.
The technical solution adopted for the present invention to solve the technical problems is: a kind of highly integrated battery protection circuit is characterized in that: comprise a termination battery, the main switch of a termination load or charger; Extremely send the main switch grid control circuit that disconnects the main switch signal according to the charge or discharge of battery; There is the main switch substrate control circuit along with main switch state auto-switching main switch underlayer voltage; Be used for reducing the anti-change countermeasure circuit connected the damage of battery of power supply change and charger; Guarantee that highly integrated battery protection circuit enters the state initializing circuit of correct detected state when initially connecing battery; Realize according to different battery requirements the section translation circuit that the charging of 0V battery or the charging of 0V battery are forbidden.
Further: described main switch is an isolated form NMOS pipe or PMOS pipe, its substrate and Semiconductor substrate isolation.
Further: described main switch, main switch grid control circuit, main switch substrate control circuit, power supply change countermeasure circuit, state initializing circuit and section translation circuit all are arranged on same semi-conductive substrate.
Further: described main switch grid control circuit comprises reference voltage generating circuit, the testing circuit that overcharges, overdischarge testing circuit, overcurrent sensing circuit, built-in time of delay arrange circuit, short-circuit detecting circuit, charger detection circuit, level shift circuit and temperature protection circuit.It is positive voltage that described charger detection circuit has the negative voltage lifting of negative voltage terminal, realizes the voltage lifting circuit of the comparison between positive voltage.
Further: described main switch substrate control circuit has minimum voltage decision circuitry, abnormality decision circuitry, substrate switching switch circuit and level shift circuit.
Again further: described change countermeasure circuit has the filter circuit that is connected to described highly integrated battery protection circuit external voltage input source and described highly integrated battery protection circuit internal supply voltage end, also has the charger reverse-connection protection circuit that is connected to negative voltage terminal and described highly integrated battery protection circuit negative internal voltage test side.
Again further: described state initializing circuit has allows described highly integrated battery protection circuit enter the electrify restoration circuit of normal operating state when highly integrated battery protection circuit initially powers on.
Again further: described section translation circuit has can be by 0 volt of cell voltage comparison circuit of fusible safe silk programming.
Further: it is positive voltage that described charger detection circuit has the negative voltage lifting of negative voltage terminal, realizes the voltage lifting circuit of the comparison between positive voltage.
The present invention relates to highly integrated battery protection circuit; relate in particular to and there is the highly integrated battery protection circuit that overcharges, automatically cuts off when overdischarge, overcurrent the protection switch pipe that battery is connected with charger; also will overcharge switch and overdischarge switch of this circuit is reduced to a main switch and is integrated on same semi-conductive substrate with other circuit of realizing battery protection, is applied to the battery protection scheme and only needs a peripheral components.As shown in Figure 3, control circuit 099, main switch 103, resistance R 1 and R2 are integrated in same chip 100.
Fig. 3 example of the present invention can be expanded as shown in figure tetra-embodiment, has: main switch 103, main switch grid control circuit 101, main switch substrate control circuit 102, change countermeasure circuit 098.Main switch grid control circuit 101 detects the abnormality of batteries, sends signal and disconnects described main switch 103, simultaneously by the automatically switch substrate biasing of described main switch 103 of main switch substrate control circuit 102.Such main switch 103 can replace original charge switch 094 and discharge switch 093, and this main switch is placed in same semi-conductive substrate with grid control circuit and the substrate control circuit of controlling this switching tube.
In addition, the invention is characterized in the damage had when change countermeasure circuit 098 reduces the power supply change and charger is counter connects battery.
According to the present invention on same semi-conductive substrate integrated described main switch 103, main switch grid control circuit 101, main switch substrate control circuit 102, change countermeasure circuit 098, only need to connect 1 electric capacity in periphery and can form the battery protection scheme.Because the present invention is kept to a main switch 103 by original two switching tubes 095, and described main switch 103 all is integrated on same substrate with other circuit, the chip area that chip area adds two switching tubes than the controller chip in traditional scheme dwindles greatly, finally can be encapsulated in a minimum encapsulation SOT23-5 even less.Moreover, due to the integrated peripheral components R1 made in traditional scheme of main switch, R2 also can be integrated in chip, and therefore final peripheral components has only needed a device of C1.Greatly reduced the final scheme area.On cost, both because dwindling, reduced chip area chip cost, because dwindling, package area reduced again packaging cost, and the integrated final scheme area reducing that makes of peripheral components, thereby reduced the printed circuit board (PCB) cost, it is last because main switch and other circuit all are integrated on same semi-conductive substrate, come from same manufacturing process, not there will be and resemble in the described scheme of Fig. 2 two chip packages from different manufacturing process together, because wherein any one chip bad causes the yield cost that whole scheme lost efficacy, realized real low-cost high integration.
The other additional function: power supply change countermeasure circuit can reduce power supply change and the anti-damage connected battery of charger; The state initializing circuit well guarantees that described battery protection enters correct detected state when initially connecing battery.
The accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is that conventional batteries protective device one is implemented the square frame pie graph
Fig. 2 is another enforcement square frame pie graph of conventional batteries protective device
Fig. 3 is the square frame pie graph of battery protecting apparatus one embodiment of the present invention
Fig. 4 is the square frame pie graph (control circuit of outstanding main switch) of battery protecting apparatus one embodiment of the present invention
Fig. 5 is the detailed square frame pie graph of battery protecting apparatus internal implementation example of the present invention
Fig. 6 is that section translation circuit of the present invention is implemented the square frame pie graph
Fig. 7 is that charging detecting circuit of the present invention is implemented the square frame pie graph
Fig. 8 is the profile (main switch is the N-type pipe of isolation) that battery protecting apparatus of the present invention is integrated in same P type semiconductor substrate
Fig. 9 is the profile (main switch is P type pipe) that battery protecting apparatus of the present invention is integrated in same P type semiconductor substrate
In figure: 090 battery 091 load or the traditional battery protection ic of charger 092
093 discharge switch 094 charge switch
095 charge switch and being collectively referred to as together with discharge switch is combined into
096 multi-chip package technology by battery protection ic controller and charge and discharge switch package in a chip
098 change countermeasure circuit
099 control circuit
100 highly integrated battery protection circuit 101 main switch grid control circuits
102 main switch substrate control circuit
111 reference voltage generating circuit 112 delay circuit 113 short-circuit detecting circuits
114 overcharge testing circuit 115 logical circuits 116 puts testing circuit excessively
117 excess temperature detection circuit 118 overcurrent sensing circuit 119 level shift circuits
120 charging detecting circuit 121 abnormal state detection circuit
122 minimum voltage testing circuit 123 substrate diverter switch 124 level shift circuits
125 charger reverse-connection protection circuit 126 filter circuit 127 initializing circuits
128 section translation circuit 129 fusible safe silk 130 comparators
211P type Semiconductor substrate
225 isolation channels
235 degree of depth N-type traps
The N-type substrate trap of 241 pipes of the PMOS for control circuit
The P type substrate trap of 242 pipes of the NMOS for control circuit
The P type substrate trap of 243N type main switch
The N-type substrate trap of 244P type main switch
251P type light doping section
252N type light doping section
The N-type light doping section of the source of 253N type main switch/drain electrode
The P type light doping section of the source of 254P type main switch/drain electrode
261P type heavily doped region
262N type heavily doped region
270 grids
271 grid curb wall structures
275 gate insulators
The M1M2 transistor
Embodiment
Fig. 4 is the simplification square frame pie graph of an embodiment of the present invention.
In this enforcement, implement the detection of the abnormalities such as the overcharging of batteries, overdischarge, overcurrent by main switch grid control circuit 101 and send the disconnection of main switch 103 or the control of conducting.Realize the correct bias of the substrate of main switch 103 by substrate control circuit 102.
Battery in Fig. 4 is the secondary cell such as lithium ion normally, and positive electrode is connected with the terminal T1 that the positive voltage terminal is described highly integrated battery protection circuit 100, and negative electrode is connected with negative voltage terminal T4 by main switch 103.Change countermeasure circuit absorbs the cell voltage change.Load or charger positive electrode meet T1 in addition, and negative electrode meets T4.The grid of main switch 103 connects main switch grid control circuit 101, and substrate connects main switch substrate control circuit 102.
Fig. 5 is the detailed square frame pie graph of a battery protection internal implementation example of the present invention
Highly integrated battery protection circuit 100 has main switch grid control circuit 101, main switch substrate control circuit 102, and main switch 103 and change countermeasure circuit 098 form.Wherein main switch grid control circuit 101 has reference voltage generating circuit 111, delay circuit 112, short-circuit detecting circuit 113, overcharges testing circuit 114, logical circuit 115, crosses and put testing circuit 116, excess temperature detection circuit 117, overcurrent sensing circuit 118, level shift circuit 119, charging detecting circuit 120, initializing circuit 127, section translation circuit 128 and form; Substrate control circuit 102 has abnormal state detection circuit 121, minimum voltage testing circuit 122, substrate diverter switch 123, level shift circuit 124 formations; Change countermeasure circuit 098 has charger reverse-connection protection circuit 125, filter circuit 126 forms.
Charging detecting circuit 120 is connected in negative voltage terminal T4, once the T4 terminal voltage than default voltage hour, is judged excessive charger, connects.Over-current detection circuit 118, short-circuit detecting circuit 112 and charger detection circuit 120 are connected in charger reverse-connection protection circuit 125, to such an extent as to the abnormal voltage of negative terminal can not cause opposite end sub-connection terminal circuit to cause damage in the time of the charger reversal connection.
The control signal that abnormal state detection circuit 121 is accepted logical circuit 115 exports level shift circuit 124 to, level shift circuit 124 also receives the 122 signal outputs of minimum voltage testing circuit, then exports the substrate that substrate diverter switch 123 is controlled main switch 103.
Fig. 6 is that section translation circuit of the present invention is implemented the square frame pie graph.
The disconnected fuse that holds that is connected in the negative input end of battery negative terminal and comparator 130 charges and forbids for controlling the 0V battery.Comparator 130 sends logic control circuit 115 by detection signal.
Fig. 7 is that charging detecting circuit of the present invention is implemented the square frame pie graph.
Charging detecting circuit is real relatively to be detected for negative voltage.The T4 connecting terminals is connected to the drain electrode of M1, and the source electrode of M2 is connected in cell voltage, and the source electrode of the M1 negative terminal of delivering to comparator 130 that is connected with the drain electrode of M2 is compared with earth potential.When larger charger connects, negative voltage terminal T4 voltage is well below earth potential, thus M1 and M2 be composed in series the lifting that voltage lifting circuit has been realized negative voltage.When the T4 terminal voltage detects voltage lower than default charger, comparator is judged charger and is connected.
Fig. 8 is the profile that battery protecting apparatus of the present invention is integrated in same semi-conductive substrate.Take P type semiconductor substrate 211 as example, and in Fig. 8, the NMOS on the left side and PMOS are for designing all control circuits of the present invention, and the isolation nmos switch on the right is effective designs main switch of the present invention.Realize the surface isolation by isolation channel 225 between each device in figure, the method that forms isolation channel 225 is many, does not describe one by one here.In Fig. 8, NMOS and PMOS derive from the CMOS technique the most extensively adopted in the semiconductor technology processing procedure.Wherein NMOS and PMOS are by grid, source electrode, four port semiconductor device that drain electrode and substrate form.As shown in Figure 8, the grid 270 of NMOS and PMOS is generally to be formed by the polysilicon adulterated, and one deck gate insulator 275 (being generally silicon dioxide) is arranged between grid and source/drain electrode.Usually also can form a grid curb wall structure 271 in the grid forming process.NMOS and PMOS are symmetrical semiconductor device, and its source electrode and drain electrode can be exchanged.The source of NMOS/drain electrode is comprised of N-type heavily doped region 262 and N-type light doping section 252, and the source of PMOS/drain electrode is comprised of P type heavily doped region 261 and P type light doping section 251.The substrate of NMOS is comprised of P type substrate trap 242 and the P type heavily doped region 261 (figure does not mark) that injects this P type substrate trap, and the substrate of PMOS is comprised of N-type substrate trap 241 and the N-type heavily doped region 262 (figure does not mark) that injects this N-type substrate trap.Control circuit of the present invention, except being comprised of NMOS and PMOS, also may be used NPN pipe or PNP pipe, because general CMOS technique all contains parasitic PNP pipe or NPN pipe, in this figure, does not mark especially.Main switch shown in Fig. 8 is an isolated form nmos switch pipe, is also by grid, source electrode, four port semiconductor device that drain electrode and substrate form.In order to simplify technique, the grid 270 of this main switch is formed by same semiconductor technology with the NMOS for control circuit is the same with PMOS.This main switch is with being built in the maximum difference of the NMOS for control circuit on same semi-conductive substrate, and its P type substrate trap 243 is by degree of depth N-type trap 235 and 211 isolation of P type semiconductor substrate.The substrate of main switch can, by its substrate control circuit tangential different node under different situations, realize being replaced by a switching tube function of two switching tubes like this.The source electrode of this main switch and drain electrode are also symmetrical.In order to simplify technique, the source of main switch/drain electrode can equally with the NMOS for control circuit also be comprised of identical N-type heavily doped region 262 and N-type light doping section 252.But in battery protecting apparatus application or storage process, the both positive and negative polarity reversal connection of two batteries often occurs, the voltage difference between main switch drain electrode and source electrode will reach the twice cell voltage in this case.In order to guarantee that main switch can be closed in this case, except the main switch grid control circuit need provide the signal of cutting out grid, also require the reverse breakdown voltage of main switch to be more than or equal to the twice cell voltage.The NMOS puncture voltage provided when selected basic process is during lower than 2 times of cell voltages, for the NMOS of main switch, with NMOS for control circuit, compare need to be higher reverse breakdown voltage.In order the most simply to realize this point, the P type substrate trap 243 of adjustable main switching tube and the N-type light doping section 253 of source/drain electrode, make it different with the N-type light doping section 252 of P type substrate trap 242 for control circuit NMOS pipe and source/drain electrode.According in different basic processes and different application situation, needing to improve how many puncture voltages, can regulate P type substrate trap 243 and N-type light doping section 253 simultaneously or only regulate the two one of reach the purpose that promotes puncture voltage.If while both needing to regulate simultaneously, last required technique will increase two procedures, if only need regulate both one of, finally only need to increase a procedure.When the NMOS puncture voltage provided when selected basic process is more than or equal to 2 times of cell voltages, the P type substrate trap 243 of main switch is identical with the P type substrate trap 242 of NMOS pipe for control circuit, the source of main switch/drain electrode N-type light doping section 253 is identical with control circuit NMOS pipe source/drain electrode N-type light doping section 252, like this just without increasing any operation.
When Semiconductor substrate is the P type, due to the N-type substrate trap 241 of PMOS pipe with semi-conductive P type substrate 211 isolation, therefore also available PMOS pipe as main switch, as shown in Figure 9.The PMOS puncture voltage provided when selected basic process is during lower than 2 times of cell voltages, for the PMOS of main switch, with PMOS for control circuit, compare need to be higher reverse breakdown voltage.In order the most simply to realize this point, can regulate the N-type substrate trap 244 of P type main switch and the P type light doping section 254 of source/drain electrode, make it different with the P type light doping section 251 of N-type substrate trap 241 for control circuit PMOS pipe and source/drain electrode.According in different basic processes and different application situation, needing to improve how many puncture voltages, can regulate N-type substrate trap 244 and its P type light doping section 254 of P type main switch simultaneously or only need regulate the two one of reach the purpose that promotes puncture voltage.If while both needing to regulate simultaneously, last required technique will increase two procedures, if only need regulate both one of, finally only need to increase a procedure.When the PMOS puncture voltage provided when selected basic process is more than or equal to 2 times of cell voltages, the N-type substrate trap 244 of P type main switch is identical with the N-type substrate trap 241 of PMOS pipe for control circuit, the source of P type main switch/drain electrode P type light doping section 254 is identical with control circuit PMOS pipe source/drain electrode P type light doping section 251, like this just without increasing any operation.Than NMOS internal resistance many greatly (being generally 2 to 2.5 times), with the PMOS pipe, as main switch, than the NMOS pipe with isolation, take larger chip area due to the PMOS internal resistance, cost also can correspondingly increase.
When Semiconductor substrate is N-type, can, by Fig. 8 and similar isolated form NMOS pipe and the isolated form PMOS pipe made of Fig. 9, at this, not tire out and state one by one yet.
Claims (10)
1. a highly integrated battery protection circuit, is characterized in that: comprise a termination battery, the main switch of a termination load or charger; Extremely send the main switch grid control circuit that disconnects the main switch signal according to the charge or discharge of battery; There is the main switch substrate control circuit along with main switch state auto-switching main switch underlayer voltage; Be used for reducing the anti-change countermeasure circuit connected the damage of battery of power supply change and charger; Guarantee that highly integrated battery protection circuit enters the state initializing circuit of correct detected state when initially connecing battery; Realize according to different battery requirements the section translation circuit that the charging of 0V battery or the charging of 0V battery are forbidden.
2. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch is an isolated form NMOS pipe, and its substrate is isolated with whole semiconductor chip substrate.
3. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch is an isolated form PMOS pipe, and its substrate is isolated with whole Semiconductor substrate.
4. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch, main switch grid control circuit, main switch substrate control circuit, power supply change countermeasure circuit, state initializing circuit and section translation circuit all are arranged on same semi-conductive substrate.
5. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch grid control circuit comprises reference voltage generating circuit, the testing circuit that overcharges, overdischarge testing circuit, overcurrent sensing circuit, built-in time of delay arrange circuit, short-circuit detecting circuit, charger detection circuit, level shift circuit and temperature protection circuit.
6. highly integrated battery protection circuit according to claim 1, it is characterized in that: described main switch substrate control circuit has minimum voltage decision circuitry, abnormality decision circuitry, substrate switching switch circuit and level shift circuit.
7. highly integrated battery protection circuit according to claim 1; it is characterized in that: described change countermeasure circuit has the filter circuit that is connected to described highly integrated battery protection circuit external voltage input source and described highly integrated battery protection circuit internal supply voltage end, also has the charger reverse-connection protection circuit that is connected to negative voltage terminal and described highly integrated battery protection circuit negative internal voltage test side.
8. highly integrated battery protection circuit according to claim 1, it is characterized in that: described state initializing circuit has allows described highly integrated battery protection circuit enter the electrify restoration circuit of normal operating state when highly integrated battery protection circuit initially powers on.
9. highly integrated battery protection circuit according to claim 1 is characterized in that: described section translation circuit has can be by 0 volt of cell voltage comparison circuit of fusible safe silk programming.
10. highly integrated battery protection circuit according to claim 5, it is characterized in that: it is positive voltage that described charger detection circuit has the negative voltage lifting of negative voltage terminal, realizes the voltage lifting circuit of the comparison between positive voltage.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682355A (en) * | 2015-02-13 | 2015-06-03 | 深圳市富满电子集团股份有限公司 | Lithium battery protective circuit |
| CN106711957A (en) * | 2015-07-27 | 2017-05-24 | 长城汽车股份有限公司 | Lithium battery monomer protection circuit, vehicle-mounted power supply and automobile |
| CN107039951A (en) * | 2017-03-17 | 2017-08-11 | 南京中感微电子有限公司 | Battery protecting circuit and lithium battery |
| CN107466432A (en) * | 2015-04-13 | 2017-12-12 | Itm半导体有限公司 | Battery protecting circuit encapsulates and included the battery pack of battery protecting circuit encapsulation |
| CN107681637A (en) * | 2016-08-01 | 2018-02-09 | 上海晶准电子科技有限公司 | Battery protection integrated circuit |
| CN109391010A (en) * | 2018-11-30 | 2019-02-26 | 深圳源创智能照明有限公司 | A kind of lithium battery high temperature automatic protection plate |
| CN109449891A (en) * | 2018-11-06 | 2019-03-08 | 苏州赛芯电子科技有限公司 | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability |
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| CN109802663A (en) * | 2019-01-09 | 2019-05-24 | 帝奥微电子有限公司 | Analog switch with negative voltage processing capacity and constant conduction impedance |
| CN110021981A (en) * | 2019-04-30 | 2019-07-16 | 维沃移动通信有限公司 | Charger and terminal |
| CN110289442A (en) * | 2019-07-10 | 2019-09-27 | 深圳先进储能材料国家工程研究中心有限公司 | Large capacity secondary cell |
| CN110445099A (en) * | 2019-08-06 | 2019-11-12 | 苏州赛芯电子科技有限公司 | A kind of semiconductor structure and its manufacturing process of integrated battery protection circuit |
| WO2020025271A1 (en) | 2018-07-31 | 2020-02-06 | Robert Bosch Gmbh | Switching device, electrical energy storage system, device and/or vehicle and method for connecting a voltage source to a load resistance by means of a switching device |
| CN112260370A (en) * | 2020-12-18 | 2021-01-22 | 苏州赛芯电子科技股份有限公司 | Battery protection circuit board |
| CN114362734A (en) * | 2022-03-18 | 2022-04-15 | 成都市易冲半导体有限公司 | Substrate voltage dynamic selection method and circuit of ultra-low negative voltage resistant power signal switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104682355A (en) * | 2015-02-13 | 2015-06-03 | 深圳市富满电子集团股份有限公司 | Lithium battery protective circuit |
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| CN106711957B (en) * | 2015-07-27 | 2019-02-19 | 长城汽车股份有限公司 | A kind of protection circuit, vehicle power supply and the automobile of lithium battery monomer |
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| CN107039951A (en) * | 2017-03-17 | 2017-08-11 | 南京中感微电子有限公司 | Battery protecting circuit and lithium battery |
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Application publication date: 20131225 |