KR101771154B1

KR101771154B1 - Battery protection circuit module and battery pack including the same

Info

Publication number: KR101771154B1
Application number: KR1020150117433A
Authority: KR
Inventors: 나혁휘; 황호석; 김영석; 안상훈
Original assignee: 주식회사 아이티엠반도체
Priority date: 2015-08-20
Filing date: 2015-08-20
Publication date: 2017-08-25
Also published as: KR20170022449A

Abstract

A battery protection circuit module according to one aspect of the present invention includes a first positive electrode terminal and a first negative electrode terminal electrically connected to electrode terminals of a battery bare cell, a second positive electrode terminal electrically connected to the charger or the electronic device, A first negative terminal, a second negative terminal, a drain terminal, a source terminal, a gate terminal, and a well terminal, the drain terminal being electrically connected to the first negative terminal and the source terminal being electrically connected to the second negative terminal A protection integrated circuit device for controlling charging and discharging of the battery bare cell by controlling the switching of the single field effect transistor by controlling the gate terminal and controlling the bias of the well terminal by using an internal switching device, .

Description

A battery protection circuit module, and a battery pack including the battery protection circuit module.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a battery for an electronic device, and more particularly, to a battery protection circuit module for protecting a battery cell and a battery pack including the battery protection circuit module.

Generally, batteries are used in electronic devices such as mobile phones and PDAs. Lithium-ion batteries are the most widely used batteries in portable handsets, and they have overcharging and over-currents, and when the temperature rises due to the heat generation, the performance deteriorates as well as the risk of explosion. Therefore, in order to prevent such performance deterioration, there is an increasing need to provide a battery protection circuit device that cuts off the operation of the battery.

1. Published Patent Application No. 10-2007-0044544 (Apr. 30, 2007) 2. Registration patent publication 10-0791551 (December 27, 2007)

Conventional battery protection circuit devices use two field effect transistors as switching elements to control charging and discharging, but it is difficult to reduce the performance degradation and the volume due to the increase of the operating resistance.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a battery protection circuit module and a battery pack using a single field-effect transistor for solving various problems including the above-described problems. However, these problems are exemplary and do not limit the scope of the present invention.

A battery protection circuit module according to one aspect of the present invention includes a first positive electrode terminal and a first negative electrode terminal electrically connected to electrode terminals of a battery bare cell, a second positive electrode terminal electrically connected to the charger or the electronic device, A first negative terminal, a second negative terminal, a drain terminal, a source terminal, a gate terminal, and a well terminal, the drain terminal being electrically connected to the first negative terminal and the source terminal being electrically connected to the second negative terminal A protection integrated circuit device for controlling charging and discharging of the battery bare cell by controlling the switching of the single field effect transistor by controlling the gate terminal and controlling the bias of the well terminal by using an internal switching device, . Wherein the protection integrated circuit device includes a reference terminal connected between the first negative terminal and the drain terminal, a sense terminal connected between the second negative terminal and the source terminal, and a bias terminal connected to the well terminal The bias terminal is always connected to either one of the reference terminal and the sense terminal, and the internal switch element is connected between a terminal of the sense terminal and the bias terminal, which is not normally connected to the bias terminal, Respectively.

The protection integrated circuit device may further include a diode connected between the reference terminal and the sense terminal, the bias terminal being connected to the bias terminal and the bias terminal, .

In the battery protection circuit module, the bias terminal is always connected to the reference terminal via the diode, and the internal switch element can be interposed between the bias terminal and the sensing terminal.

In the battery protection circuit module, the bias terminal is always connected to the sense terminal via the diode between the bias terminal and the sense terminal, and the internal switch element may be interposed between the bias terminal and the reference terminal .

In the battery protection circuit module, the protection integrated circuit device may further include an internal resistor connected in series with the diode between the reference terminal connected to the bias terminal and the bias terminal, and either one of the sense terminal have.

The protection integrated circuit device may sense the connection of the charger or the load when the charging or discharging is interrupted and the single field effect transistor is turned on when charging or discharging is restored.

A battery protection circuit module according to another aspect of the present invention includes a first positive terminal and a first negative terminal electrically connected to electrode terminals of a battery bare cell and a second positive terminal electrically connected to a charger or an electronic device, And a drain terminal, a source terminal, a gate terminal, and a well terminal, wherein the drain terminal is electrically connected to the first negative terminal, and the source terminal is electrically connected to the second negative terminal A protection integrated circuit for controlling charge and discharge of the battery bare cell by controlling the switching of the single field effect transistor by controlling the gate terminal and controlling the bias of the well terminal by using an internal switch element, Device. Wherein the protection integrated circuit device includes a reference terminal connected between the first negative terminal and the drain terminal, a sense terminal connected between the second negative terminal and the source terminal, and a bias terminal connected to the well terminal And the bias terminal is connectable to the sense terminal via the intermediate switch element.

In the battery protection circuit module, the bias terminal may be connected to the sense terminal when the internal switch element is turned on, and may be floated when the internal switch element is turned off.

According to another aspect of the present invention, there is provided a battery pack comprising: a battery bare cell; And a battery protection circuit module connected to the battery bare cell. The battery protection circuit module may include a first positive terminal and a first negative terminal electrically connected to the electrode terminals of the battery bare cell, a second positive terminal and a second negative terminal electrically connected to the charger or the electronic device, A single field effect transistor including a drain terminal, a source terminal, a gate terminal and a well terminal, the drain terminal being electrically connected to the first negative terminal, and the source terminal being electrically connected to the second negative terminal, And a protection integrated circuit device controlling the gate terminal to control the switching of the single field effect transistor and controlling the bias of the well terminal by using an internal switch element to control charge and discharge of the battery bare cell. Wherein the protection integrated circuit device includes a reference terminal connected between the first negative terminal and the drain terminal, a sense terminal connected between the second negative terminal and the source terminal, and a bias terminal connected to the well terminal The bias terminal is always connected to either one of the reference terminal and the sense terminal, and the internal switch element is connected between a terminal of the sense terminal and the bias terminal, which is not normally connected to the bias terminal, Respectively.

According to the embodiments of the present invention as described above, it is possible to provide a battery protection circuit capable of reducing the operation resistance and improving the performance and being compact. Of course, the scope of the present invention is not limited by these effects.

1 is a schematic circuit diagram showing a battery protection circuit module according to an embodiment of the present invention.
2 is a schematic circuit diagram showing a battery protection circuit module according to another embodiment of the present invention.
3 is a schematic circuit diagram showing a battery protection circuit module according to another embodiment of the present invention.
4 is a schematic perspective view illustrating a battery protection circuit module according to embodiments of the present invention.
5 is a perspective view illustrating a battery pack according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

In describing embodiments of the present invention, the same reference numerals can be used to describe the concept of a circuit from the viewpoint of a battery protection circuit, but the concept of a device or a circuit part can be described from the viewpoint of a battery protection circuit package.

In describing embodiments of the present invention, an integrated circuit (IC) may mean an electronic component in which many devices are integrated into one chip to process a specific complicated function.

1 is a schematic circuit diagram showing a battery protection circuit module according to an embodiment of the present invention.

1, a battery protection circuit module according to this embodiment includes a first positive terminal 102 and a first negative terminal 104 electrically connected to the electrode terminals of the battery bare cell Bc, And a second anode terminal 106 and a second anode terminal 108 electrically connected to the electronic device. For example, the first positive terminal 102 is an internal positive terminal B + connected to the positive terminal of the battery bare cell Bc in the battery pack and the first negative terminal 104 is connected to the positive terminal of the battery bare cell Bc. (B +) connected to the anode of the electronic device, and the second anode terminal 106 is an external cathode terminal (P +) connected to the charger of the battery pack or the anode of the electronic device and the second anode terminal Or an external negative electrode terminal (P-) connected to the negative electrode of the electronic device.

Further, although not shown in the drawings, the battery protection circuit module according to some embodiments of the present invention may further include a separate additional external connection terminal.

The battery protection circuit module includes a single field effect transistor (FET) 102 connected between at least one of the first positive terminal 102 or the first negative terminal 104 and at least one of the second positive terminal 106 and the second negative terminal 108. [ And a protection integrated circuit device (P-IC) 118 for controlling the single field effect transistor 112.

For example, the single field effect transistor 112 may include a drain terminal D, a source terminal S, a gate terminal G and a well terminal Bin, 2 cathode terminal 108. In the present embodiment, For example, the drain terminal D may be electrically connected to the first negative terminal 104, and the source terminal S may be electrically connected to the second negative terminal 108. [ However, since the drain terminal D and the source terminal S are not distinguished from each other in the single field effect transistor 112, the two terminals may be mutually called.

The single field effect transistor 112 and the protection integrated circuit element 118 for controlling the single field effect transistor 112 can constitute a protection circuit unit. Such a protection circuit unit can detect over discharge, overcharge, and / or overcurrent of the battery, thereby preventing charging / discharging or operation of the battery bare cell. Specifically, the protection integrated circuit device 118 may control the single field effect transistor 112 to control overcharge and / or overdischarge of the battery bare cell BC.

The single field effect transistor 112 may be, for example, an N-type MOSFET (NMOSFET). And a pair of parasitic diodes PD1 and PD2 connected to each other in the opposite directions about a node n4 connected to the well terminal Bin. For example, the parasitic diode PD1 may be connected such that the direction of the drain electrode D from the node n4 is positive and the parasitic diode PD2 is connected so that the direction of the source electrode S from the node n4 is positive have.

The protection integrated circuit device 118 may include control logic to control a single field effect transistor 112 therein. For example, the control logic may include a reference voltage setting unit, a comparison unit for comparing the reference voltage with the charge / discharge voltage, an overcurrent detection unit, and a charge / discharge detection unit.

The charging and discharging state judgment criterion can be changed to the specification (SPEC) required by the user, and the charge / discharge state is judged by recognizing the voltage difference of each terminal of the protection integrated circuit element 118 according to the predetermined criterion. For example, the protection integrated circuit device 118 includes a reference terminal Vss, a power supply terminal Vdd, a sensing terminal V-, a charge / discharge control signal output terminal CDout, (Bout).

The protection integrated circuit element 118 may be connected to the nodes n1, n2, and n4 via at least one passive element. For example, the power supply terminal vdd is connected to the node n1 between the first positive terminal 102 and the second positive terminal 106 via the resistor R1, and the reference terminal Vss is connected to the first negative terminal (N2) between the source terminal (104) and the drain terminal (D). A capacitor C1 may be interposed between the reference terminal Vss and the power supply terminal Vdd between the node n1 and the node n2 to prevent a short circuit between the two nodes n1 and n3. The sensing terminal V- can be connected to the node n3 through the resistor R2. A capacitor C2 may be connected in parallel with the single field effect transistor 112 between the two nodes n2 and n3.

According to this configuration, the protection integrated circuit device 118 can apply the charging voltage or the discharging voltage through the power supply terminal Vdd with reference to the voltage of the reference terminal Vss, Charge / discharge and overcurrent condition can be detected. The charge and discharge control signal output terminal CDout is connected to the gate terminal G of the single field effect transistor 112 to control on-off of the single field effect transistor 112 upon charging and / .

The charging current flows from the second positive terminal 106 to the first positive terminal 102 and from the first negative terminal 104 to the second negative terminal 108 when the battery is charged. The discharging current flows from the first positive terminal 102 to the second positive terminal 106 and from the second negative terminal 108 to the first negative terminal 104 when the battery is discharged.

The protection integrated circuit device 118 outputs a low signal through the charge / discharge control signal output terminal CDout to turn off the single field effect transistor 112 when the overcurrent or overdischarge state is detected during battery discharge , And when the battery is being charged, it may operate to output a low signal through the charge / discharge control signal output terminal CDout to turn off the single field effect transistor 112 when an overcurrent or overcharge state is detected. As a result, the circuit between the first negative terminal 104 and the second negative terminal 108 is cut off, thereby overcharging, overdischarging, and / or overcurrent of the battery can be blocked.

In addition, the protection integrated circuit device 118 applies a voltage to the well terminal (Bin) of the single field effect transistor 112 through the bias terminal (Bout) in addition to the charge / discharge control signal output terminal (CDout) It is possible to control the electric field states of the PDs PD1 and PD2.

The resistor R1 and the capacitor C1 serve to stabilize the fluctuation of the supply power source of the protection integrated circuit element 118. [ When the resistance value of the resistor R1 is increased, the detection voltage becomes higher due to the current penetrated into the protection integrated circuit element 118 at the time of voltage detection. Therefore, the resistance value of the resistor R1 is set to a predetermined value, Can be set. Also, for stable operation, the capacitance value of the capacitor C1 may be appropriately adjusted, and may have an appropriate value of, for example, 0.01 mu F or more.

The resistor R1 and the resistor R2 become a current limiting resistor when the high voltage charger or charger that exceeds the absolute maximum rating of the protection integrated circuit element 118 is connected upside down. The sum of the resistance value in the resistor R1 and the resistance value in the resistor R2 may be set to be larger than 1 K? Since the resistor R1 and the resistor R2 may cause power consumption. If the resistance value of the resistor R2 is too large, a return may not occur after the overcharge cutoff, so that the resistance value of the resistor R2 may be set to a value of 10K or less.

The capacitor C1 does not significantly affect the characteristics of the battery protection circuit product, but is added for user's request or stability. The capacitor C1 is for stabilizing the system by improving the resistance to voltage fluctuation and external noise.

Alternatively, although not shown in the drawing, a structure in which a resistor and a varistor are connected in parallel may be added for ESD (Electrostatic Discharge) and surge protection. The varistor device has a low resistance when overvoltage is generated. When the overvoltage is generated, the resistance is lowered to minimize circuit damage due to overvoltage. The number or arrangement of the passive elements in the above-described protective circuit unit can be appropriately modified in accordance with the additional function.

According to the above-described battery protection circuit module, by using a single field effect transistor 112 rather than a conventional dual field effect transistor, the resistance can be lowered to increase the overall operation speed, and additionally, volume reduction can be expected.

Since the above-described protection circuit unit can be implemented as a semiconductor chip, it is possible to fabricate the protection circuit unit in a minute or nanometer scale by using a silicon process technology. For example, both the protection integrated circuit device 118 and the single field effect transistor 112 can be fabricated as semiconductor chips as well as passive components such as resistors R1 and R2, capacitors C1 and C2, Can also be manufactured in chip form. Such a chip structure can be easily mounted on a substrate using surface mounting technology (SMT).

2 and 3 are schematic circuit diagrams showing a battery protection circuit module according to another embodiment of the present invention. The battery protection circuit module of these embodiments is a more specific example of the inside of the protection integrated circuit element 118 in the battery protection circuit module of FIG. 1, and thus redundant description is omitted in the embodiments.

2 and 3, the protection integrated circuit device 118 controls the switching of the single field effect transistor 112 by controlling the gate terminal G and controls the switching of the single field effect transistor 112 by using the internal switch elements SW1 and SW2, It is possible to control the charging and discharging of the battery bare cell Bc by controlling the bias of the battery bare cell Bin.

In the protection integrated circuit element 118, the bias terminal Bout is always connected to either the reference terminal Vss or the sensing terminal V-, and the internal switch elements SW1 and SW2 are connected to the reference terminal Vss And a terminal between the sensing terminal V- and the bias terminal Bout which is not always connected to the bias terminal Bout. Further, the protection integrated circuit element 118 is provided between the reference terminal Vss and the sensing terminal V- connected to the bias terminal Bout and the bias terminal Bout, And a diode (ID1, ID2) connected in a forward direction.

2, the bias terminal Bout is always connected to the reference terminal Vss via the diode ID1, and the internal switch element SW1 is connected between the bias terminal Bout and the sensing terminal V- Can be intervened. More specifically, the bias terminal Bout is connected to the node n5 between the reference terminal Vss and the sensing terminal V-, and between the node n5 and the reference terminal Vss, in addition to the diode ID1, The internal resistance R31 may be further added. The internal switch element SW1 may be interposed between the node n5 and the sensing terminal V-. The diode ID1 may be connected therebetween such that the direction of the reference terminal Vss from the node n5 is the reverse direction.

During normal charging, the internal switch element SW1 is turned off, and the single field effect transistor 112 is turned on to provide a charging current < RTI ID = 0.0 > Can flow. When the internal switch element SW1 is turned off, the bias terminal Bout outputs the voltage of the reference terminal Vss.

However, the internal switch element SW1 may be turned on and the single field effect transistor 112 may be turned off at the time of overcharge detection or at the time of charge overcurrent detection. Thus, when the internal switch element SW1 is turned on, the bias terminal Bout may be connected to the sensing terminal V-, and the voltage of the sensing terminal V- may be applied to the well terminal Bin. Accordingly, the parasitic diode PD2, which is in the forward direction in charging, is disabled and the parasitic diode PD1 in the reverse direction has a constant internal pressure, so that the charging current in the direction of the source S from the drain D can be cut off. As a result, the charging current can be cut off in the entire circuit.

When charging is restored, the change in the set potential of the power supply terminal Vdd, the sense terminal V- and / or the reference terminal Vss is sensed to recognize the charger removal or the load connection so that the single field effect transistor 112 is turned on , And the internal switch element SW1 can be turned off.

During a steady-state discharge, the internal switch element SW1 is turned off, and the single field effect transistor 112 is turned on to provide a discharge current Can flow.

However, when overdischarge detection or discharge overcurrent detection at the time of discharge is detected, the internal switch element SW1 may be turned off and the single field effect transistor 112 may also be turned off. When the internal switch element SW1 is turned off, the bias terminal Bout is kept connected to the reference terminal Vss and the voltage of the reference terminal Vss can be applied to the well terminal Bin. Accordingly, the parasitic diode PD1, which is in the forward direction at the time of discharging, is disabled, while the parasitic diode PD2, which is in the reverse direction, generates the internal pressure, and the discharge current in the direction of the drain S from the source S can be blocked. As a result, the discharge current can be cut off in the entire circuit.

When the discharge is restored, the change in the set potential of the power supply terminal (Vdd), the sense terminal (V-) and / or the reference terminal (Vss) is sensed to recognize the charger connection or the load removal, And the internal switch element SW1 can maintain the turn-off state.

In the case of the above charge / discharge control, the magnitude of the internal resistance R31 is relatively increased, and the current between the reference terminal Vss and the bias terminal Bout or between the reference terminal Vss and the sensing terminal V- is negligible . For example, the internal resistance R31 may have a value in the range of about 10-20 k [Omega], so that the current through the protection integrated circuit element 118 between the reference terminal Vss and the sensing terminal V- Can be negligibly small only to a leakage current level of several tens to several hundreds of microamperes or less. For example, during overcharge detection, charge overcurrent detection, overdischarge detection, or discharge overcurrent detection, both the current through the single integrated field effect transistor 112 as well as the current through the protection integrated circuit element 118 can be blocked.

3, the bias terminal Bout is always connected to the sensing terminal V- via the diode ID2 between the sensing terminal V- and the internal switching element SW2 is connected to the bias terminal Bout- And the reference terminal Vss. More specifically, the bias terminal Bout is connected to the node n5 between the reference terminal Vss and the sensing terminal V-, and the diode ID2 is connected between the node n5 and the sensing terminal V-. And the internal resistance R32 may be interposed. For example, the internal switch element SW2 may be interposed between the node n5 and the reference terminal Vss. The diode ID2 may be connected between the node n5 and the sensing terminal V- so that the direction of the sensing terminal V- is opposite.

During normal charging, both the internal switch element SW2 and the single field effect transistor 112 are turned on, allowing the charge current to flow through the channel of the single field effect transistor 112. [ When the internal switch element SW2 is turned on, the voltage of the reference terminal Vss may be output to the bias terminal Bout.

However, the internal switch element SW2 may be turned off and the single field effect transistor 112 may be turned off at the time of overcharge detection or at the time of charging overcurrent detection. When the internal switch element SW12 is turned off, the bias terminal Bout is connected to the sensing terminal V-, and the voltage of the sensing terminal V- may be applied to the well terminal Bin. The parasitic diode PD2 which is in the forward direction at the time is disabled and the charging current can be shut off as the parasitic diode PD1 which is in the reverse direction has a constant withstand voltage so that the charging current can be blocked in the whole circuit. The single field effect transistor 112 and the internal switch element SW2 can both be turned on at the time of charge return.

During the steady-state discharge, both the internal switch element SW2 and the single field-effect transistor 112 are turned on and a discharge current can flow through the channel of the single field-effect transistor 112.

However, during overdischarge detection or discharge overcurrent detection during discharge, the internal switch element SW2 may be turned on and the single field effect transistor 112 may be turned off. When the internal switch element SW2 is turned on, the bias terminal Bout is kept connected to the reference terminal Vss and the voltage of the reference terminal Vss can be applied to the well terminal Bin. Accordingly, the parasitic diode PD1 which is in the forward direction at the time of discharging is disabled and the parasitic diode PD2 which is in the reverse direction generates the internal pressure, thereby blocking the discharging current in the direction of the drain D from the source S. Accordingly, The discharge current can be cut off in the entire circuit.

When the discharge is restored, the change of the set potential of the power supply terminal Vdd, the sense terminal V- and / or the reference terminal Vss is sensed to recognize the charger connection or the load removal, The switch SW2 can be turned on.

In the case of the above charge / discharge control, the magnitude of the internal resistance R32 is relatively increased to neglect the current between the reference terminal Vss and the bias terminal Bout or between the reference terminal Vss and the sensing terminal V- . For example, the internal resistance R32 may have a value in the range of about 10-20 k [Omega], so that the current through the protection integrated circuit element 118 between the reference terminal Vss and the sensing terminal V- Can be negligibly small only to a leakage current level of several tens to several hundreds of microamperes or less. For example, during overcharge detection, charge overcurrent detection, overdischarge detection, or discharge overcurrent detection, both the current through the single integrated field effect transistor 112 as well as the current through the protection integrated circuit element 118 can be blocked.

According to the above-described embodiments, on / off of the single field effect transistor 112 is controlled and the bias voltage output through the bias terminal Bout through the internal switch elements SW1 and SW2 is controlled, The charge and discharge of the battery cell Bc can be controlled by the effect transistor 112. [

In addition, since the bias terminal Bout is always connected to either the reference terminal Vss or the sense terminal V-, the bias voltage can be controlled by only one internal switch element SW1 or SW2, thereby simplifying the switch structure . In addition, by using the resistors R31 and R32 and the diodes ID1 and ID2, it is possible to detect the charger or the load connection while discharging the current flow into the protection integrated circuit element 118 at the leakage current level during charge / It becomes possible to return.

Further, in some embodiments, the circuit may be simplified by switching the voltage utilizing a conventional inverter circuit without having a separate transistor inside the protection integrated circuit element 118.

4 is a schematic circuit diagram showing a battery protection circuit module according to another embodiment of the present invention. The battery protection circuit module according to the present embodiment is a modified example of the battery protection circuit module shown in FIG. 2, and a duplicate description will be omitted.

4, the reference terminal Vss is opened between the node n5 and the bias terminal Bout is connected to the sensing terminal V- via the node n5 via the internal switch element SW1. . That is, the structure of FIG. 4 may correspond to a structure in which the diode ID1 and the resistor R31 are omitted in FIG.

During normal charging, the internal switch element SW1 is turned off, and the single field effect transistor 112 is turned on to provide a charging current < RTI ID = 0.0 > Can flow. When the internal switch element SW1 is turned off, the bias terminal Bout can be floating.

However, the internal switch element SW1 may be turned on and the single field effect transistor 112 may be turned off at the time of overcharge detection or at the time of charge overcurrent detection. Thus, when the internal switch element SW1 is turned on, the bias terminal Bout may be connected to the sensing terminal V-, and the voltage of the sensing terminal V- may be applied to the well terminal Bin. Accordingly, the parasitic diode PD2, which becomes the forward direction in charging, is disabled, and the charging current can be cut off as the parasitic diode PD1, which is in the reverse direction, has a constant internal pressure. As a result, the charging current can be cut off in the entire circuit.

However, when overdischarge detection or discharge overcurrent detection at the time of discharge is detected, the internal switch element SW1 may be turned off and the single field effect transistor 112 may also be turned off. When the internal switch element SW1 is turned off, the bias terminal Bout can be floated. In this case, by designing the single field-effect transistor 112 to have a withstand voltage, the discharge current through the parasitic diodes PD1 and PD2 can be cut off without connecting the voltage of the reference terminal Vss to the bias terminal Bout . As a result, the discharge current can be cut off in the entire circuit.

5 is a perspective view schematically showing a battery protection circuit module according to an embodiment of the present invention.

Referring to FIG. 5, the above-described battery protection circuit module may be mounted on the substrate 50 and implemented in a packaging form. For example, the substrate 50 may comprise a printed circuit board or a leadframe. The protection circuit unit constituting the battery protection circuit module can be sealed in one package by using the molding material 55. [

In a modified example of this embodiment, the protection circuit units described above may be mounted on the substrate 50 in the form of a chip scale package (CSP), respectively, to reduce their volume.

In another variation of this embodiment, the field effect transistor 114, the second field effect transistor 112 and the protection integrated circuit element 118 may be a stacked package structure or a package on package (POP) Structure.

6 is a schematic exploded perspective view illustrating a battery pack according to an embodiment of the present invention.

Referring to FIG. 6, the battery protection circuit module 300 is inserted between a top surface of a battery bare cell built in the battery can 400 and the upper case 500 to form a battery pack 600. The upper case 500 is formed with a through hole 550 in a portion corresponding to the external connection terminals P + and P- so that the external connection terminals P + and P- can be exposed by plastic and / or metal.

The battery bare cell includes an electrode assembly and a cap assembly. The electrode assembly includes a positive electrode plate formed by applying a positive electrode active material to a positive electrode collector, a negative electrode plate formed by applying a negative electrode active material to a negative electrode collector, and a negative electrode plate interposed between the positive electrode plate and the negative electrode plate, As shown in Fig. A positive electrode tab attached to the positive electrode plate and a negative electrode tab attached to the negative electrode plate are drawn out from the electrode assembly.

The cap assembly includes an anode terminal 410, a gasket 420, a cap plate 430, and the like. The cap plate 430 may serve as a positive electrode terminal. The cathode terminal 410 may be referred to as a cathode cell or an electrode cell. The gasket 420 may be formed of an insulating material to insulate the cathode terminal 410 from the cap plate 430. Therefore, the electrode terminal of the battery bare cell may include the negative terminal 410 and the cap plate 430.

The electrode terminal of the battery bare cell includes a plate 430 of a first polarity (e.g., an anode) and an electrode cell 410 of a second polarity (e.g., cathode) disposed centrally within the plate 430 The first internal connection terminal lead B + is connected to the plate 430 of the first polarity (for example, an anode) to be electrically connected, and the second internal connection terminal lead B- is electrically connected to the second And can be electrically connected to the electrode cell 410 of the polarity (for example, the cathode). In some embodiments, the length of the leadframe 50 is greater than the length from one end of the plate 430 of the first polarity (e.g., an anode) to the electrode cell 410 of the second polarity (e. G., The cathode) (L / 2).

According to some embodiments, the battery protection circuit package module 300 is mounted using only one side region of the upper portion with respect to the electrode cell 410 of the second polarity (for example, the cathode), so that the battery can be miniaturized or increased in capacity Can be implemented. For example, it is possible to contribute to miniaturization of an application product having such a battery by further forming a cell on the other side of the electrode cell 410 to increase the capacity of the battery or disposing a chip or the like having another additional function.

While the present invention has been described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

112: single field effect transistor
118: Protection Integrated Circuit Device

Claims

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A first positive terminal and a first negative terminal electrically connected to the electrode terminals of the battery bare cell;
A second positive electrode terminal and a second negative electrode terminal electrically connected to the charger or the electronic device;
A single field effect transistor including a drain terminal, a source terminal, a gate terminal and a well terminal, the drain terminal being electrically connected to the first negative terminal, and the source terminal being electrically connected to the second negative terminal; And
And a protection integrated circuit element for controlling the switching of the single field effect transistor by controlling the gate terminal and controlling the bias of the well terminal by using an internal switch element to control charging and discharging of the battery bare cell,
Wherein the protection integrated circuit device includes a reference terminal connected between the first negative terminal and the drain terminal, a sense terminal connected between the second negative terminal and the source terminal, and a bias terminal connected to the well terminal The bias terminal is always connected to either one of the reference terminal and the sense terminal, and the internal switch element is connected between the reference terminal and a terminal of the sense terminal, which is not normally connected to the bias terminal, Respectively,
Wherein the protection integrated circuit device includes a diode connected between any one of the reference terminal and the sense terminal connected to the bias terminal and the bias terminal so that the bias terminal direction is forward.

3. The method of claim 2,
Wherein the bias terminal is always connected to the reference terminal via the diode, and the internal switch element is interposed between the bias terminal and the sense terminal.

The method of claim 3,
And the internal switch element is turned on when an overcharge is detected.

3. The method of claim 2,
The bias terminal is always connected to the sense terminal via the diode between the bias terminal and the sense terminal, and the internal switch element is interposed between the bias terminal and the reference terminal.

6. The method of claim 5,
Wherein the internal switch element is turned off at the time of overdischarge detection.

3. The method of claim 2,
Wherein the protection integrated circuit device is connected in series with the diode between either the reference terminal and the sensing terminal connected to the bias terminal and the bias terminal to divide the current flow between the reference terminal and the sensing terminal into a leakage current The internal resistance of the battery protection circuit module.

The battery protection circuit module according to claim 7, wherein the protection integrated circuit device detects the connection of a charger or a load when charging or discharging is interrupted, and then turns on the single field effect transistor.

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Battery bare cell; And
And a battery protection circuit module connected to the battery bare cell,
The battery protection circuit module includes:
A first positive electrode terminal and a first negative electrode terminal electrically connected to the electrode terminals of the battery bare cell;
A second positive electrode terminal and a second negative electrode terminal electrically connected to the charger or the electronic device;
A single field effect transistor including a drain terminal, a source terminal, a gate terminal and a well terminal, the drain terminal being electrically connected to the first negative terminal, and the source terminal being electrically connected to the second negative terminal; And
And a protection integrated circuit element for controlling the switching of the single field effect transistor by controlling the gate terminal and controlling the bias of the well terminal by using an internal switch element to control charging and discharging of the battery bare cell,
Wherein the protection integrated circuit device includes a reference terminal connected between the first negative terminal and the drain terminal, a sense terminal connected between the second negative terminal and the source terminal, and a bias terminal connected to the well terminal The bias terminal is always connected to either one of the reference terminal and the sense terminal, and the internal switch element is connected between a terminal of the sense terminal and the bias terminal, which is not normally connected to the bias terminal, Respectively,
Wherein the protection integrated circuit device includes a diode connected between the reference terminal and the sensing terminal, the diode being connected to the bias terminal and the bias terminal such that the direction of the bias terminal is a forward direction.

13. The method of claim 12,
Wherein the internal switch element is turned on when overcharge or overdischarge is detected.

14. The method of claim 13,
Wherein the protection integrated circuit device detects the connection of the charger or the load when the charging or discharging is interrupted and the single field effect transistor is turned on when the charging or discharging is restored.