CN101504943A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
- Publication number
- CN101504943A CN101504943A CNA200910005434XA CN200910005434A CN101504943A CN 101504943 A CN101504943 A CN 101504943A CN A200910005434X A CNA200910005434X A CN A200910005434XA CN 200910005434 A CN200910005434 A CN 200910005434A CN 101504943 A CN101504943 A CN 101504943A
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- CN
- China
- Prior art keywords
- terminal
- semiconductor chip
- circuit
- integrated circuit
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/46—Accumulators structurally combined with charging apparatus
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
The inventive objective lies in providing a semiconductor integrated circuit capable of lessening the number of electronic components and lowering manufacturing cost and installation area of the entire device. The semiconductor integrated circuit, which accommodates a semiconductor chip in package individually or mounts the semiconductor chip on a substrate along with the electronic components interconnected around, and which uses an insulating material for injection molding, is provided with: a current-limiting resistor (R10) one end of which is connected an external terminal of the semiconductor chip while the other end of which is connected with a electrostatic protection diode (D1) and which is arranged within the semiconductor chip; and fuses (FS) which are interconnected in parallel between two ends of the current-limiting resistor (R10) and are arranged within the semiconductor chip.
Description
Technical field
The present invention relates to semiconductor integrated circuit, relate to semiconductor chip is housed in separately in the encapsulation, perhaps semiconductor chip together is installed on the substrate with the electronic unit that is connected around, and use insulating material to carry out the semiconductor integrated circuit of injection molding.
Background technology
In recent years, as secondary cell lithium ion battery is installed in the portable equipments such as digital camera.Because lithium ion battery is overcharging resisting electricity and overdischarge not, so overcharge and the mode of the battery pack of the protective circuit of overdischarge is used to possess.
Fig. 4 has represented to use the circuit structure diagram of an example of the battery pack of existing protective circuit.In the figure, the positive pole of lithium ion battery 10, negative pole are connected with outside terminal B+, the B-of battery pack respectively.Between terminal B+, B-, be connected with the series circuit of resistance R 1 and capacitor C1.Terminal B+ is connected with the outside terminal P+ of battery pack, and terminal B-is connected with the outside terminal P-of battery pack via the n channel MOS that is used to cut off electric current (burning film semiconductor) FET (field effect transistor) FET transistor M1, M2.
In addition, terminals P+, be connected with capacitor C2 between the P-, between terminal B-, P-, be connected with capacitor C3.Terminals P+, connect load or charger between the P-.
The drain electrode of transistor M1, M2 is linked together, and the source electrode of transistor M1 is connected with the negative pole of lithium ion battery 10 via terminal B-, the source electrode of transistor M2 and terminals P-be connected.Transistor M1, M2 grid separately is connected with terminal 11d, the 11e of protective circuit 11.
Protective circuit 11 is the semiconductor integrated circuit that are housed in separately in the encapsulation, is built-in with the testing circuit that overcharges, overdischarge testing circuit, overcurrent sensing circuit.In addition; protective circuit 11 provides power vd D via resistance R 1 to terminal 11a by the positive pole of lithium ion battery 10; and provide power supply VSS to carry out work from the negative pole of lithium ion battery 10 to terminal 11b, overcurrent detects with terminal 11c via resistance R 2 and terminals P-be connected.
In addition, for be limited in terminals P+, between the P-, during with the polarity charger of having done instead incorrect link, perhaps the electric current when having connected voltage and surpass the charger of rated voltage of protective circuit 11 is provided with resistance R 2.
Protective circuit 11 when common charging or discharge the time make terminal 11d, 11e be all high level to make transistor M1, M2 conducting.In addition, when detecting overdischarge or overcurrent by overdischarge testing circuit or overcurrent sensing circuit, make terminal 11d be output as low level and cut off transistor M1, make 11e be output as low level when overcharging to cut off transistor M2 detecting by the testing circuit that overcharges.
In addition, in patent documentation 1, put down in writing a kind of battery pack that has with the PTC thermistor of the switch element thermal coupling of cutting off the current path when discharging and recharging.
[patent documentation 1] spy opens the 2006-32015 communique
Summary of the invention
So, existing protective circuit 11 is because added resistance R 2 outside, so exist electronic unit quantity to increase, the manufacturing cost of whole device raises, in addition, and the problem that erection space increases.
The present invention proposes in view of above problem, and its purpose is to provide a kind of quantity that can reduce electronic unit, and can reduce the semiconductor integrated circuit of the manufacturing cost and the erection space of whole device.
In one embodiment of the present invention, be housed in semiconductor chip in the encapsulation separately, perhaps together be installed in substrate on the electronic unit that is connected around semiconductor chip, and use insulating material to carry out in the semiconductor integrated circuit of injection molding, have: an end is connected with the outside terminal of described semiconductor chip, on the other end, connect electrostatic protection diode (D1), and be set at the electric current brownout resistance (R10) in the described semiconductor chip; And between the two ends of described electric current brownout resistance (R10), be connected in parallel, be arranged on fuse (FS) in the described semiconductor chip.
It is desirable to, under situation about described semiconductor chip being housed in individually in the encapsulation, do not cut off described fuse (FS), on described outside terminal, connect electric current restriction external resistor (R2).
It is desirable to, semiconductor chip together is being installed on the substrate with the electronic unit that is connected around, and use insulating material to carry out under the situation of injection molding, cut off described fuse (FS), on described outside terminal, do not connect electric current restriction external resistor.
In addition, the reference marks in the above-mentioned bracket is added for easy to understand, only is that an example is not limited to illustrated mode.
According to the present invention, can reduce the quantity of electronic unit, can reduce the manufacturing cost and the erection space of whole device.
Description of drawings
Fig. 1 is to use the circuit structure diagram of first execution mode of the battery pack of semiconductor integrated circuit of the present invention.
Fig. 2 is to use the circuit structure diagram of variation of first execution mode of the battery pack of semiconductor integrated circuit of the present invention.
Fig. 3 is to use the circuit structure diagram of an execution mode of the charge protector of semiconductor integrated circuit of the present invention.
Fig. 4 is to use the circuit structure diagram of an example of the battery pack of existing protective circuit.
Symbol description
10,20,31～34 lithium ion batteries; 21A, 21B protective circuit; 35 charge protectors; C1～C17 capacitor; R1～R21 resistance; M1～M12 transistor
Embodiment
Below with reference to the accompanying drawings embodiments of the present invention are described.
(encapsulation type)
Fig. 1 represents to use the circuit structure diagram of first execution mode of the battery pack of semiconductor integrated circuit of the present invention.In the figure, for the additional identical symbol of the part identical with Fig. 4.
In Fig. 1, the positive pole of lithium ion battery 20, negative pole are connected with outside terminal B+, the B-of battery pack respectively.Between terminal B+, B-, be connected with the series circuit of resistance R 1 and capacitor C1.Terminal B+ is connected with the outside terminal P+ of battery pack, and terminal B-is connected with the outside terminal P-of battery pack via transistor M1, the M2 as the n channel mosfet that are used to cut off electric current.Transistor M1, M2 grid separately is connected with terminal 21d, the 21e of protective circuit 21A.
In addition, terminals P+, be connected with capacitor C2 between the P-, between terminal B-, P-, be connected with capacitor C3.Terminals P+, connect load or charger between the P-.
The drain electrode of transistor M1, M2 links together, and the source electrode of transistor M1 is connected with the negative pole of lithium ion battery 20 via terminal B-, the source electrode of transistor M2 and terminals P-be connected.
Protective circuit 21A is housed in the interior semiconductor integrated circuit of encapsulation separately with semiconductor chip, is built-in with the testing circuit that overcharges, overdischarge testing circuit, overcurrent sensing circuit, and is provided with resistance R 10, fuse FS and diode D1.
Connect the end of electric current brownout resistance R10 on the overcurrent of protective circuit 21A detects with terminal 21c, the other end of resistance R 10 is connected with above-mentioned overcurrent sensing circuit.In addition, with the resistance R 10 fuse FS that is connected in parallel, on resistance R 10 and the other end that overcurrent sensing circuit is connected, connect the negative electrode of electrostatic protection, the plus earth of diode D1 with diode D1.When fuse FS is not cut off, pass through fuse FS between the two ends of resistance R 10 by short circuit.
In addition; electrostatic protection is connected negative electrode with diode D1 with terminal 21c in the prior art; but because in protective circuit 21A built-in electric current brownout resistance R10; so on the other end opposite, connect the negative electrode of electrostatic protection with diode D1 with an end that is connected with terminal 21c of resistance R 10; when fuse FS was not cut off, the negative electrode of diode D1 was connected with terminal 21c via fuse FS.
In addition; protective circuit 21A provides power vd D via resistance R 1 to terminal 21a by the positive pole of lithium ion battery 20; and the negative pole by lithium ion battery 20 provides power supply VSS to move to terminal 21b, and overcurrent detects with terminal 21c via the electric current restriction with external resistor R2 (R2=R10) and terminals P-be connected.
In addition; for terminals P+, during the charger of polarity having been done between the P-instead incorrect link; electric current restriction when perhaps having connected voltage and surpassing the charger of rated voltage of protective circuit 21A; perhaps because built-in resistance R 10 is because fuse FS and by short circuit among the protective circuit 21A, and be provided with resistance R 2.
Protective circuit 21A when common charging or discharge the time make that terminal 21d, 21e are public to make transistor M1, M2 conducting for high level.In addition, when detecting overdischarge or overcurrent by overdischarge testing circuit or overcurrent sensing circuit, make terminal 21d be output as low level and cut off transistor M1, make 21e be output as low level when overcharging to cut off transistor M2 detecting by the testing circuit that overcharges.
(COB type)
Fig. 2 represents to use the circuit structure diagram of variation of first execution mode of the battery pack of semiconductor integrated circuit of the present invention.In the figure, for the additional identical symbol of the part identical with Fig. 1.
In Fig. 2, the positive pole of lithium ion battery 20, negative pole are connected with outside terminal B+, the B-of battery pack respectively.Between terminal B+, B-, be connected with the series circuit of resistance R 1 and capacitor C1.Terminal B+ is connected with the outside terminal P+ of battery pack, and terminal B-is connected with the outside terminal P-of battery pack via transistor M1, the M2 as the n channel mosfet that are used to cut off electric current.
In addition, terminals P+, be connected with capacitor C2 between the P-, between terminal B-, P-, be connected with capacitor C3.Terminals P+, connect load or charger between the P-.
The drain electrode of transistor M1, M2 links together, and the source electrode of transistor M1 is connected with the negative pole of lithium ion battery 20 via terminal B-, the source electrode of transistor M2 and terminals P-be connected.Transistor M1, M2 grid separately is connected with terminal 21d, the 21e of protective circuit 21B.
Connect the end of electric current brownout resistance R10 on the overcurrent of protective circuit 21B detects with terminal 21c, the other end of resistance R 10 is connected with above-mentioned overcurrent sensing circuit.In addition, the fuse FS that is connected in parallel with resistance R 10 is cut off, and connects the negative electrode of electrostatic protection with diode D1 on resistance R 10 and the other end that overcurrent sensing circuit is connected, the plus earth of diode D1.
In addition, protective circuit 21B provides power vd D via resistance R 1 to terminal 21a by the positive pole of lithium ion battery 20, and provides power supply VSS to move by the negative pole of lithium ion battery 20 to terminal 21b, overcurrent detect with terminal 21c directly with terminals P-be connected.
The semiconductor chip of protective circuit 21B is the exposed state of not encapsulation; it together is installed on the substrate with the resistance R 1 as electronic unit that is connected at periphery, capacitor C1, C2, C3, transistor M1, M2, carries out injection molding by insulating material and makes COB (Chip On Board) type circuit.
When fuse FS is cut off; electrostatic protection is separated with terminal 21c with diode D1; so can't carry out electrostatic protection based on the terminal 21c of diode D1; but together be installed in the COB type circuit that has carried out injection molding on the substrate then with capacitor C1, C2, C3, transistor M1, M2; because can't see terminal 21c from the outside; so can produce static hardly at terminal 21c, in addition, terminal 21c be carried out electrostatic protection by transistor M2.
So, when making semiconductor integrated circuit be the COB type, electric current restriction external resistor R2 can be eliminated, the manufacturing cost and the erection space of whole device can be reduced by the quantity that reduces electronic unit by cutting off fuse FS.
(charge protector)
Fig. 3 represents to use the circuit structure diagram of an execution mode of the charge protector of semiconductor integrated circuit of the present invention.In the figure; the lithium ion battery 31,32,33,34 that is recharged a side is connected in series; the positive pole of lithium ion battery 31; transistor M11, M12 via the p channel mosfet are connected with the outside terminal P+ of charge protector 35, and the negative pole of lithium ion battery 34 is connected with the outside terminal P-of charge protector.
In addition; the positive pole of lithium ion battery 31 is connected with the terminal 35a of charge protector 35; the positive pole of lithium ion battery 32 is connected with the terminal 35b of charge protector 35 via resistance R 11; the positive pole of lithium ion battery 33 is connected with the terminal 35c of charge protector 35 via resistance R 12, and the positive pole of lithium ion battery 34 is connected with the terminal 35d of charge protector 35 via resistance R 13.Between terminal 35a, 35b, connect capacitor C11, between terminal 35b, 35c, connect capacitor C12, between terminal 35c, 35d, connect capacitor C13, between terminal 35d, outside terminal P-, connect capacitor C14.
The drain electrode of transistor M11, M12 links together, and the source electrode of transistor M11 is connected with the positive pole of lithium ion battery 31, the source electrode of transistor M12 and terminals P+be connected.Transistor M11, M12 grid separately is connected with terminal 35e, the 35f of charge protector 35.
Connect the end of electric current brownout resistance R20 on the overcurrent of charge protector 35 detects with terminal 35g, the other end of resistance R 20 is connected with above-mentioned overcurrent sensing circuit.In addition, the fuse F11 that is connected in parallel with resistance R 20 is cut off, and connects the negative electrode of electrostatic protection with diode D11 on resistance R 20 and the other end that overcurrent sensing circuit is connected, the plus earth of diode D11.In addition, terminal 35g is connected with the outside terminal P-of charge protector.
In addition; the terminal 35h of charge protector 35 is connected with the outside terminal CTL of charge protector; terminal 35i is connected with the outside terminal VREG of charge protector; terminal 35j is connected with the outside terminal P-of charge protector via resistance R 15; between terminal 35i, 35j, connect capacitor C16, between terminal VREG, P-, connect capacitor C17.
The semiconductor integrated circuit chip of charge protector 35 is exposed states of not encapsulation; it together is installed on the substrate with the resistance R 11～R15 as electronic unit that is connected at periphery, capacitor C11～C17, transistor M11, M12, carries out injection molding by insulating material and makes COB (Chip OnBoard) type circuit.
Relative therewith, when semiconductor chip being housed in individually the semiconductor integrated circuit in the encapsulation, do not cut off fuse F11, the resistance R 21 (R21=R20) that between terminal 35g, P+, connects shown in dotted line at charge protector 35.
In this embodiment, when making semiconductor integrated circuit be the COB type, electric current restriction external resistor R21 can be eliminated, the manufacturing cost and the erection space of whole device can be reduced by the quantity that reduces electronic unit by cutting off fuse FS.
Claims (3)
1. semiconductor integrated circuit, it is housed in semiconductor chip separately in the encapsulation, perhaps together is installed in semiconductor chip and the electronic unit that is connected around on the substrate and uses insulating material to carry out injection molding, it is characterized in that,
Have: an end is connected with the outside terminal of described semiconductor chip, on the other end, connects the electrostatic protection diode, and be set at the electric current brownout resistance in the described semiconductor chip; And
Between the two ends of described electric current brownout resistance, be connected in parallel, be arranged on the fuse in the described semiconductor chip.
2. semiconductor integrated circuit according to claim 1 is characterized in that,
Under situation about described semiconductor chip being housed in individually in the encapsulation, do not cut off described fuse, on described outside terminal, connect electric current restriction external resistor.
3. semiconductor integrated circuit according to claim 1 is characterized in that,
Described semiconductor chip and the electronic unit that is connected around together are being installed on the substrate, are using insulating material to carry out cutting off described fuse under the situation of injection molding, on described outside terminal, do not connecting electric current restriction external resistor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008025286A JP5286809B2 (en) | 2008-02-05 | 2008-02-05 | Semiconductor integrated circuit |
| JP2008025286 | 2008-02-05 | ||
| JP2008-025286 | 2008-02-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101504943A true CN101504943A (en) | 2009-08-12 |
| CN101504943B CN101504943B (en) | 2012-07-04 |
Family
ID=40977116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910005434XA Active CN101504943B (en) | 2008-02-05 | 2009-01-20 | Semiconductor integrated circuit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5286809B2 (en) |
| KR (1) | KR101028784B1 (en) |
| CN (1) | CN101504943B (en) |
| TW (1) | TW200943663A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102397624A (en) * | 2010-09-17 | 2012-04-04 | 鼎迈医疗科技(苏州)有限公司 | Implantable active electronic device with overcurrent protection circuit and electric stimulation system |
| CN103378070A (en) * | 2012-04-16 | 2013-10-30 | 富士电机株式会社 | Semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103023005B (en) * | 2012-11-30 | 2015-02-04 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit |
| US9940986B2 (en) | 2015-12-16 | 2018-04-10 | Globalfoundries Inc. | Electrostatic discharge protection structures for eFuses |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2563783B2 (en) * | 1986-10-22 | 1996-12-18 | セイコーエプソン株式会社 | Static electricity protection circuit |
| JPH09219521A (en) * | 1997-03-24 | 1997-08-19 | Seiko Epson Corp | Semiconductor device |
| JP2001189428A (en) * | 1999-10-19 | 2001-07-10 | Citizen Watch Co Ltd | Protective circuit of semiconductor integrated circuit |
| KR100450181B1 (en) * | 2002-04-15 | 2004-09-24 | 삼성에스디아이 주식회사 | A battery pack having a second protection circuit isolated spatially |
| JP3958269B2 (en) * | 2003-09-09 | 2007-08-15 | 日本テキサス・インスツルメンツ株式会社 | Demodulator and data recording apparatus having the same |
| JP4046106B2 (en) * | 2004-06-16 | 2008-02-13 | 株式会社村田製作所 | Battery pack protection circuit and battery pack |
| JP2006073553A (en) * | 2004-08-31 | 2006-03-16 | Nec Electronics Corp | Fuse trimming circuit |
| JP2007088192A (en) * | 2005-09-22 | 2007-04-05 | Sanyo Electric Co Ltd | Semiconductor device |
-
2008
- 2008-02-05 JP JP2008025286A patent/JP5286809B2/en active Active
- 2008-10-29 KR KR1020080106281A patent/KR101028784B1/en active IP Right Grant
-
2009
- 2009-01-20 CN CN200910005434XA patent/CN101504943B/en active Active
- 2009-01-23 TW TW098102880A patent/TW200943663A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102397624A (en) * | 2010-09-17 | 2012-04-04 | 鼎迈医疗科技(苏州)有限公司 | Implantable active electronic device with overcurrent protection circuit and electric stimulation system |
| CN103378070A (en) * | 2012-04-16 | 2013-10-30 | 富士电机株式会社 | Semiconductor device |
| CN103378070B (en) * | 2012-04-16 | 2016-04-13 | 富士电机株式会社 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200943663A (en) | 2009-10-16 |
| KR101028784B1 (en) | 2011-04-14 |
| JP2009189127A (en) | 2009-08-20 |
| CN101504943B (en) | 2012-07-04 |
| KR20090086019A (en) | 2009-08-10 |
| JP5286809B2 (en) | 2013-09-11 |
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