TW200937684A - White led device and method for manufacturing the same - Google Patents

Abstract

Disclosed is a white LED device comprising a container having a recessed portion, a blue LED chip mounted on the bottom of the recessed portion, an insulating liquid or sol layer filled into the recessed portion to surround the blue LED chip, and a transparent resin layer arranged on top of the container for sealing the insulating liquid or sol layer in such a manner that the transparent resin layer is continuously in contact with the surface of the insulating liquid or sol layer. In this white LED device, a phosphor is dispersed in the transparent resin layer.

Description

200937684, IX. Description of the Invention: [Technical Field] The present invention relates generally to a light-emitting device, and more particularly to a white light-emitting diode (LED) using an LED (1 ight-emi tting diode) ) device. [Prior Art] The white LEEKlight-emitting diode 'Light Emitting Diode> illuminating device is a high-efficiency light-emitting device using LEDs and is expected to be used for high-efficiency backlights, high-efficiency backlights for transmissive or projection type liquid crystal display devices. Various applications. A high-brightness blue-based LED has been put into practical use, and therefore, a white LED light-emitting device that converts blue light generated into white light by a phosphor using the high-brightness blue-based LED as described above has been proposed. [Problems to be Solved by the Invention] Patent Document 1 describes a white light which is generated by using a blue LED chip as described above to convert blue light into white light by a phosphor. LED lighting device. In the white LED light-emitting device of Patent Document 1, a blue LED chip is encapsulated in a resin layer in which a phosphor is dispersed, and blue light generated by the blue LED wafer passes through the resin layer. At the same time, the phosphor is excited and converted from blue light to white light. On the other hand, in the white LED light-emitting device of the aforementioned Patent Document 1, 2001-10159-PF; Ahddub 5 200937684, since the blue-based LED wafer is encapsulated in the resin layer, based on the shrinkage generated when the resin layer is hardened or The heat generated by the LED wafer during the operation causes stress in the bonding wire constituting the wafer or the electric wiring, and the life of the device is shortened. In particular, in the configuration of Patent Document 1, since the blue-based LEI) wafer is encapsulated in the cured resin layer, there is a problem that the thermal conductivity is poor and the temperature of the wafer is easily increased due to heat generation. On the other hand, Patent Document 2 discloses a configuration in which an LED wafer is immersed in an insulating liquid in order to suppress deterioration of the LED wafer due to thermal stress. In the configuration of Patent Document 2, the phosphor powder is dispersed in the insulating liquid, and the wavelength of light emitted from the LED wafer is converted by the phosphor. In Patent Document 2, a preferred feature is that since the LED wafer is immersed in the liquid, the heat generated in the LED wafer is rapidly exotherned during operation, and the LED is not caused by thermal stress. The wafer defect is degraded. However, in the configuration of Patent Document 2, when the device is placed, the phosphor powder tends to precipitate in the liquid. Therefore, it is necessary to stir the liquid during the light-emitting operation to disperse the phosphor powder in the liquid. Therefore, in the configuration of Patent Document 2, a stirring mechanism for liquid is provided. However, the above-described configuration is complicated, and it is not only lacking in reliability, but also has various problems such as a large scale and excessive power consumption. Patent Document 1: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Laid-Open Publication No. JP-A-2006-286999 (Patent Document No. JP-A-2006-286999)

The invention relates to a white light-emitting diode device comprising: a container having a recess; a blue-emitting diode (LED) wafer mounted at the bottom of the front phase portion; The recessed portion and the layer of the insulating liquid or sol surrounding the blue light-emitting diode wafer are formed on the outer side of the insulating liquid or the sol layer as viewed from the blue light-emitting diode wafer. A transparent resin layer having a layer of an insulating liquid or a sol and having a specific gravity smaller than that of the insulating liquid or sol, wherein a phosphor is dispersed in the transparent resin layer. The term "transparent resin layer" as used herein does not refer to organic matter, and the term "transparent resin" refers to a transparent plastic, even if the degree is different, meaning that the material of the polymer structure in which the intermolecular crosslinking reaction is carried out is transparent. . In the present invention, in the case of the above "transparent resin layer", a linaloyl resin or an epoxy resin may be used, and even a mixed resin of linaloone and epoxy may be used. However, in the present invention, the factory transparent resin layer is not limited to the specific materials. Further, the so-called "sol" to a density of about 10 6 m causes the particles to be referred to as a colloidal solution, meaning a dispersion dispersed in a liquid of 10 -9 m. For the sol shown in the above-mentioned 2001-10159-PF; Ahddub 7 200937684 - for example, a material in which the fine vermiculite particles are dispersed in the chain structure of the decane can be used. However, the present invention is not limited to this specific one. s material. According to another aspect, the present invention provides a white light emitting diode device characterized by comprising: a blue light emitting diode wafer; an insulating liquid helium or sol layer surrounding the blue light emitting diode chip; And a transparent resin layer encapsulating the layer of the insulating liquid or the sol, and a fiber for holding the phosphor between the layer of the insulating liquid or the sol or the layer of the insulating liquid or sol and the transparent resin layer . According to another aspect, the present invention provides a method for fabricating a white light emitting diode device, comprising: a step of mounting a blue light emitting diode wafer on a bottom 4 of a container having a recess; a step of electrically wiring the light-emitting diode wafer by a bonding wire; filling the blue light-emitting diode wafer and the bonding wire in the concave portion, filling the insulating liquid or the sol to form an insulating liquid or a step of forming a layer of a sol; a step of applying an uncured resin material on a layer of liquid or sol of the rim 14 to form an uncured resin layer; and the step of unclamping (4). j In this case, it is preferable that the step of filling the insulating liquid or the sol and the step of pre-coating the hardened resin material are carried out by screen printing in the above-mentioned step of filling the insulating liquid or the sol, preferably after Vacuum degassing (4) is carried out, and in the step of applying the above-mentioned resin material of the crucible, it is also preferable to provide a dideoxygenation step in a hard (invention effect). 2001-10159-PF; Ahddub 8 200937684 according to the present invention, comprising: a container having a recess; a blue light-emitting diode wafer mounted at a bottom of the recess; being filled in the recessed portion and surrounding the blue system An insulating liquid or sol layer of the light-emitting diode wafer; and a transparent resin layer provided on the upper portion of the container and continuously contacting the surface of the insulating liquid or the sol layer to encapsulate the insulating liquid or the layer of the sol In the white light-emitting diode device, by dispersing the phosphor in the transparent tree layer, the blue light emitted by the blue-emitting diode wafer is passed through the transparent resin layer. It is converted into white light by excitation of the aforementioned phosphor. At this time, according to the present invention, the phosphor is stably held in the resin layer without being dispersed in the layer of the insulating liquid or the sol, and therefore does not occur in the layer of the aforementioned insulating liquid or sol. The problem of precipitation or agglomeration of the phosphor powder. Therefore, in the present invention, it is not necessary to stir the insulating liquid or sol in which the phosphor powder is dispersed, and the feeding mechanism can be omitted, the constitution can be simplified, reliability can be improved, and power consumption can be reduced. Further, according to the present invention, the blue light-emitting diode chip is in thermal contact with the side wall surface of the container recessed portion by the layer of the insulating liquid or the sol, and therefore, the blue light is emitted. The heat generated by the diode wafer is not only radiated by heat conduction to the substrate directly under the light-emitting diode chip, but also the side wall surface is transported by heat conduction and convection in the layer of the insulating liquid or sol. The cooling efficiency of the blue light-emitting diode chip is improved, and the life is improved. Further, according to the present invention, the blue light-emitting diode wafer is in contact with the insulating liquid or the layer of the sol, but the insulating liquid or sol has 2001-10159-PF; Ahddub 9 200937684, fluidity, and does not Since the light-emitting surface of the blue-based light-emitting diode wafer has a concavo-convex structure, the concave-convex pattern constituting the uneven structure is not completely immersed in the insulating liquid or the sol to form air therebetween. The situation of the layer. When the air layer as described above is present, the light emitted by the blue light-emitting diode wafer as described above may be between the exit surface of the light-emitting diode wafer and the layer of the insulating liquid or sol present. The sharp refractive index of the interface of the bubble changes to reflect a part of the light, and the light loss such as returning to the light-emitting diode wafer is likely to occur. The blue-emitting diode chip can be formed by forming the uneven structure as described above. The light exiting efficiency is increased, and the light loss caused by the reflection at the light exit surface is reduced. In particular, the cooling efficiency of the blue light-emitting diode wafer can be greatly improved by using a fluorine-based liquid as the liquid constituting the layer of the insulating liquid or the sol. Further, the white light-emitting diode device can be mounted on the substrate by a solder reflow process by using a liquid having a heat-resistant temperature of 250 ° C or higher as a liquid constituting the layer of the insulating liquid or sol. The solder reflow step is generally performed at a temperature around 250 °C. The heat resistance as shown above does not require a long period of time, and it is sufficient to ensure that the solder reflow step is about several tens of seconds. In the case of the liquid as shown above, a liquid fluorenone can be used. The container may be a metal having high thermal conductivity such as (3) or A1, or

Thermally conductive resins such as Al2〇3, such as Tao Jing, and even PET resin. The resin layer may be composed of a first layer not containing a phosphor and a phosphor containing a surface of the insulating liquid or sol layer 2001-10l59-pF; Ahddub 10 200937684 The second layer is composed. In the present invention, the insulating liquid or the sol is provided not only in the blue light-emitting diode wafer but also in the bonding wire provided as the electric wiring, so that the bonding wire is not stressed. , the life of the white light emitting diode device can be further extended.

Further, according to the present invention, the blue light-emitting diode wafer is borrowed from the blue light-emitting diode wafer by a step of mounting a blue-based light-emitting diode wafer on the bottom of the container having the concave portion by the white light-emitting diode device. a step of performing electrical oxygen wiring by a bonding wire; a step of filling an insulating liquid or a sol to form a layer of an insulating germanium liquid or a sol by impregnating the blue light-emitting diode chip and the bonding wire in the concave portion a step of applying an uncured encapsulating resin material to the layer of the insulating liquid or the sol, a step of performing vacuum degassing, and a manufacturing method comprising the step of hardening the encapsulating resin material. Therefore, when the uncured encapsulating resin material is dropped on the layer of the insulating liquid or the sol, the uncured encapsulating resin material is inferior in specific gravity of the insulating liquid or the rubber, and the uncured encapsulating resin material Since the specific gravity is smaller than the insulating liquid or the sol, the resin material of the insulating liquid or the sol is hardened, that is, the surface of the layer is expanded in a layer form, and only the Encapsulation obtain the desired white light emitting diode apparatus. The step of filling the insulating liquid or sol with the temple and the step of applying the uncured resin material as described above are preferably performed by a screen printing method. Further, in carrying out the aforementioned step of filling the insulating liquid or sol, it is preferred to carry out the vacuum degassing step afterwards and when carrying out the step of coating the above-mentioned unhardened 2001-10159-PF; Ahddub 11 200937684' resin material. It is also preferred to carry out the vacuum degassing step afterwards. Further, according to the present invention, by providing the phosphor in a state in which the fibers of the insulating liquid or the sol are held, the blue light emitted from the blue light-emitting diode wafer does not occur due to the foregoing. In the case where the fibers are refracted or scattered, the white light converted by the aforementioned phosphor can be efficiently taken out. [Embodiment] ® (First Embodiment) Fig. 1 shows the present invention! The configuration of the white LED light-emitting device 10 of the embodiment. Referring to Fig. 1, the white LED light-emitting device 1 is mounted on the wiring substrate 1 on which the wiring patterns 2 and 3 are carried via solder bumps 2A and 3A, and includes a mounting substrate u. A container 13 made of a base metal such as Cu or tantalum is formed in the mounting substrate u together with the mounting substrate 11 as a recess 13A, and a blue LED wafer 12 mounted on the mounting substrate 11 at the bottom of the recess 13A. . When the concave portion 13A is viewed from a direction perpendicular to the mounting substrate u, the - side has a square shape of, for example, 7 to 8 mm, and has a depth of, for example, 5 mm. The mounting substrate 11 is made of a thermal conductive ceramic such as A1N or AhG3, and has wiring patterns 1U and 11β supported thereon, and the blue wafer 12 is provided with a lower electrode (not shown) and the wiring pattern. The method of electrically and thermally connecting is surface-mounted on the mounting substrate, and further, 2001-l 159-PF; Ahddub 12 200937684, an upper electrode (not shown) is connected to the wiring by a bonding wire 12A. Pattern 11B. In the present invention, in the case of the blue-based LEJ) wafer 12, all the LED chips of the element of the so-called blue LED of ultraviolet to blue light having a wavelength of 350 to 480 nm can be used, and the configuration is not limited to this configuration.

Light direction, wafer shape. In the following description, the blue LED chip 2 is described as a case where an LED chip mainly emitting blue light and perpendicular to the mounting substrate 13 is used, but as shown in FIG. In the vertical light-emitting (10) wafer, an external light or a blue light is also emitted toward the side or the lower side. Further, in the present invention, an LED chip with an end surface light-emitting layer may be used instead of the vertically-emitting LED chip 1 2 as needed. For example, in the case of the blue LED chip 12, for example, a product such as SL_v_B4〇AC sold by SEMILEDS can be used. The wiring pattern 11A is formed on the lower surface of the mounting substrate 11. The lower conductor pattern uc is electrically connected to the wiring pattern 2 on the wiring board 1 via the solder bump 2A via the solder bump 2A. Similarly, the mounting substrate 11 is provided. The lower surface is formed with a conductor pattern 11D electrically and thermally connected to the wiring pattern UB, and the upper electrode of the blue LED chip is connected to the solder bump 3A via the bonding wire 12A and the solder bump 3A. The wiring pattern 3 is connected to the bottom portion of the concave portion 13A so as to impregnate the blue UD wafer 1 2 and the bonding wire 2A, and to introduce a heat-resistant insulating liquid such as silicone oil. An insulating liquid layer 14 composed of an fluorenone oil having a thickness of, for example, about 1 to 3 ounces is formed. The fluorenone oil is preferably a heat-resistant temperature having a temperature of 2001-10i59-pF; Ahddub 13 200937684 250C or more. When using an anthrone oil having a heat resistance temperature of 250 ° C or more as shown above, it is possible to use 25 〇c>c or so.

The solder bump of the temperature "and the reflow of 3A", the aforementioned white LED light-emitting device 10 is appropriately mounted on the wiring board 。. However, the reflow step is performed only for a time of 20 to 30 seconds. Therefore, even if it is a lower heat-resistant insulating liquid, it is used if it is resistant to the heat treatment. ❹ For the above-mentioned fluorenone oil, dimethyl hydrazine sold by, for example, Shin-Etsu Chemical Co., Ltd. can be used. Ketone oil, nonylphenyl fluorenone oil, etc. In addition, it is also possible to replace the aforementioned fluorenone oil, and to use a sol (s〇i) (colloid solution), for example, a particle size ranging from several nanometers to several tens The slag of the rice-grade stone is a sol that is sold by Shin-Etsu Chemical Co., Ltd. as a trade name 0PT0SEAL (translated name) in a key structure in which the spectroscopy is dispersed to 1G.W to the right (four) degree. In the white LED light-emitting device 1 of the first embodiment, in the front phase portion (10), on the front (four) edge (four) layer 14, a transparent resin composed of an epoxy resin and dispersing the glare is formed. The thickness of the transparent resin layer 15 is in the phase m, the notch portion formed on the side wall surface of the container 13 is referred to as a state. However, the formation of the above-described cutting and (5) is not essential and may be omitted. The "transparent resin layer" is not a pan. : In general, even if the degree is different, it means that the material of the horse molecular structure of the coupling reaction is made transparent, especially in the field of visible light 2〇〇l'10159-PF; Ahddub 14 200937684 The rate is 95% or more. μ ^ _ In the present invention, "transparent 7" 5 ' can be used as described (4) resin or epoxy resin, but = (4) mixed with epoxy wax. For the mixed resin of (4) and the oxygen as shown above, it is possible to use, for example, those sold by Shin-Etsu Chemical Co., Ltd. However, in the present invention, the transparent resin layer is not limited to such specific materials. In the above-mentioned resin layer 15, the purple-to-blue sound well which is emitted from the blue-type LED chip ❹ 12 is excited by the early release of the tooth, and the white light YAG (yarnite yttrium aiuminum) is released. The powder of the garnet or the salt-based phosphor material having a diameter of about 15 " m is dispersed at a density of, for example, about 2% by weight. The violet light emitted from the blue-based LED chip 12 has a wavelength of 35 〇 to 480 nm. When the blue light is passed through the aforementioned resin layer 15, it is converted into white light. In the white LED light-emitting device of Fig. 1, the blue LED chip 12 and the bonding wire 12A are immersed in the insulating liquid layer 14 such as kerone oil, so that the blue LED wafer 12 is driven to generate heat. At the same time, stress is not applied to the blue-based LED wafer 12 or the bonding wire 12A by the insulating liquid layer 14, and deterioration of the LED wafer 2 or deterioration of the bonding wire 12A is avoided. Further, in the white LED light-emitting device i of the first embodiment, since the insulating liquid layer 14 is a liquid, when the blue LED chip 12 is driven to generate heat, the insulating liquid layer is formed. In the middle of the 14th, heat transfer due to convection is generated, and the generated heat is efficiently delivered to the side wall portion of the container 13. It is conveyed to the aforementioned container 13 2001-10159-PF as shown above; Ahddub 15 200937684 • The heat system of the wall portion is partially radiated into the atmosphere... the portion is transported to the mounting substrate i along the aforementioned 'jj σ卩Further, the bump 2A having a function as a heat spreader can escape to the wiring substrate, and the side wall portion described above can be formed of a ceramic such as a12〇3 or a1N having high thermal conductivity. In the present embodiment, the side wall portion of the container 13 is made of a metal having high thermal conductivity such as Cu or A1, and the mounting substrate 11 is also made of a ceramic having high thermal conductivity such as A1N, and the blue LED chip is used. The heat generated by 12 quickly escapes to the wiring substrate. Further, the bottom of the container 13 may be formed of a material for a metal or ceramic or semiconductor package substrate. At this time, in the present embodiment, since the phosphor which converts the violet to blue light generated by the blue LED wafer 12 into white light is held in the cured resin layer 15, it is not required to be patented. The mechanism for stirring the liquid shown in Document 2 or the power source for use thereof, etc., does not cause excessive power consumption. In the above embodiment, it is premised on the mounting of the white LED light-emitting device 1A by the reflow of the solder bumps 2A, 3A. Therefore, it is preferable to use heat resistance in the insulating liquid layer 14 described above. The fluorenone oil, but the white LED illuminating device 1 使用 can be used in the case where the heat treatment as described above is not applied, and a fluorine-based inert liquid which is more excellent in heat resistance but has better thermal conductivity, for example, Sumitomo 3M can be used. The goods sold are F1uori nert and so on. The composition of Fig. 1 is replaced with the same size and with the use of an fluorenone resin in place of the former 2001-10159-PF; Ahddub 16 200937684, the composition of the insulating liquid layer 14 is compared, when driven with 12W of introduced electric power continuity' In the present invention, the temperature (joining temperature) of the blue LED wafer 12 is lowered by 2. 5 ° C or more.

Next, the manufacturing steps of the white LED light-emitting device 10 of the first drawing will be described with reference to Figs. 2A to 2F. However, in the second to fourth embodiments, the same components are denoted by the same reference numerals, and the description thereof will be omitted. + Referring to FIG. 2A, the blue LED chip 12 is surface-mounted on the recess 13A of the mounting substrate 11 by the container 13, and by the bonding wire 12A, the LFD, ... a is not the LLDb chip 12 The upper electrode (not shown) is connected to the wiring pattern 11B on the mounting substrate 11. In the step of FIG. 2B, in the concave portion UA, the oil is dropped from the nozzle, and then the vacuum degassing step is performed in the step of FIG. 2C, thereby forming the blue LED wafer 12 and The insulating liquid layer 14 of the bonding wire in. However, the vacuum degassing step of the second f m _ Descarte diagram may be omitted depending on the type of the insulating liquid. Next, in the step of the 2D drawing, in the aforementioned recess m, the uncured hard-filled I resin or the auxiliary tongs blended with the previously described phosphor powder is dropped from the nozzle 310 on the insulating liquid layer 14 described above. The uncured resin layer was formed to form an uncured resin layer 15 m. Since the uncured resin layer 15m is lighter in specific gravity than the insulating liquid layer 14 therebelow, the uncured resin layer 14 is diffused on the insulating liquid layer 14 to form the uncured resin layer 15m. Among them, the use of an uncured county resin in place of the aforementioned uncured stone ketone resin is also the same. 2001-10159-PF; Ahddub 17 200937684

The uncured resin layer 15 m which has not been dropped as described above is immersed in the notched portion 13B formed on the side wall surface of the metal container 13 to form the above-mentioned fastening portion 15A. For example, when a specific gravity of 1. is used as the transparent resin layer, the transparent resin layer is used in any case where the OPOTOSEL is used and the trade name Fluorinert sold by Sumitomo 3M is used as the insulating liquid layer 14. The specific gravity of the specific gravity of the above-mentioned insulating liquid layer 14 is 〇 〇 〇 〇 AL AL AL 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The specific gravity of the transparent resin layer 15 and the specific gravity of the uncured resin layer 15m are not substantially different. Further, when the recess 13 3A is filled with the uncured resin layer 15 m, the vacuum degassing step is performed in the step of FIG. 2E, in the insulating liquid layer 14, the insulating liquid layer 14 and the blue layer Ε1 The interface between the wafer 12, the interface between the insulating liquid layer 14 and the uncured resin layer, and the bubble in the uncured resin layer 15m are removed. Further, in the step of Fig. 2F, the structure obtained in the step of Fig. 2E is heat-treated at, for example, 15 Gt, and the uncured resin layer is cured to be changed into the resin layer j 5 by 15 m. Further, by attaching the structure of Fig. 2F to the wiring board i, the apparatus including the white LED light-emitting device 10 described in Fig. 1 is obtained. As described above, the specific gravity of the transparent resin layer 15 and the specific gravity of the unhardened resin layer 15m are not substantially different. The above is the resin layer 15', but the resin layer i 5 is a resin. For the case of an anthrone resin, it is also possible to use other 2001-10159-PF such as an epoxy resin; Ahddub 18 200937684 ' In the present invention, the white LED light-emitting device can contain the phosphor of the above-mentioned A as described above. The resin layer is formed by dropping on the insulating liquid layer 14 in an uncured state and hardening it, thereby simplifying the manufacturing steps of the white LED light-emitting device, in particular, the resin layer 15m which is dropped in an uncured state as shown above. The notch portion 13B formed on the wall surface of the container 13 is filled, and the resin layer 15 formed by the hardening of the resin layer 15m as described above covers the insulating liquid layer 14 even without special subsequent treatment or fastening treatment. On the other hand, it is fixed that the liquid leakage of the insulating liquid layer 14 does not occur. Further, in the present invention, the phosphor-containing transparent resin layer 15 may be disposed above the LED wafer i 2 separately from the LED chip 12, but the phosphor and the aforementioned LED wafer 12 are as shown above. In the separated arrangement, the light emitted by the phosphor is returned to the LED wafer cassette 2, and the amount of light emitted by the white LED light-emitting device can be increased without being absorbed. For example, in the white LED light-emitting device of the present embodiment, when the LED chip 12 is driven with an input power of 〇1·2W, the transparent resin layer 15 is separated from the LED wafer 2 by the phosphor. When the transparent resin layer 15 is directly in contact with the LED chip 12, it is confirmed that the amount of light emitted by the white LED light-emitting device is larger than that of the phosphor and the LED chip 2 10% ° (Second Embodiment) Fig. 3 is a view showing in detail the light-emitting surface of the blue-based LED chip 12 in the white light-emitting device 20 according to the second embodiment of the present invention, and the above-mentioned 矽2001-10159-PF; Ahddub 19 200937684,: The state of the interface of the oil layer 14. In the drawings, the same reference numerals are given to the parts corresponding to the parts described above, and the description is omitted. Referring to Fig. 3, a groove portion 12G formed of a concave-convex pattern having a depth of about 5 to 1 〇//iD is formed on the light exit surface of the blue LED chip 12 at a pitch of 2 to reduce the light on the LED chip. The light loss on the exit surface additionally increases the light emission area. When the groove portion G2G as described above is to be filled with the resin layer, bubbles are easily trapped at the interface between the base resin layer and the groove portion, and therefore, the emitted light is scattered and the light loss is increased due to the trapped bubbles. . On the other hand, in the present embodiment, the concave-convex pattern constituting the groove portion G2G is in contact with the insulating liquid layer 14, and the insulating liquid layer 14 is grounded (fluxed) to the uneven pattern, and does not occur. A case where bubbles are trapped at the interface between the concave-convex pattern and the insulating liquid layer 14. That is, according to the present embodiment, the light loss of the blue light emitted from the blue LED wafer can be reduced. Other features of the present embodiment are the same as those of the previous embodiment, and thus the description thereof is omitted. (Third Embodiment) Fig. 4A shows the configuration of a white LED light-emitting device 30 according to a third embodiment of the present invention. In the drawings, the same reference numerals are given to the parts corresponding to the parts described above, and the description is omitted. Referring to Fig. 4A, in the present embodiment, another resin layer 16 which disperses another phosphor is formed on the resin layer 15 in which the phosphor is dispersed. The resin layer 16 is formed in the fastening portion 16A. In the middle, the buckle is formed in the corresponding notch portion of the container 13 formed by 2 〇〇 〇 〇 159-PF; Ahddub 20 200937684. Here, the opposing portion is not necessarily formed, and may be omitted. And the front ruthenium resin layer 16 is formed on the resin layer forming tree in the same manner as in the 2Cth to the first lipid layer 15

The purple to the Xue color light emitted by the wafer 12 is transmitted by the blue LED 糸 巴 巴 系 系 系 通过 通过 通过 通过 通过 通过 Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί Ί + + Ί + + Ί + + + + + + + + + + + + +

G or yellow body. The b system is a red or green or yellow firefly. In this configuration, the blue LED chip 12 emits an ultraviolet light LED chip. In the same manner as the white LED light-emitting device described above, the cooling 'lifting of the LED chip/LED wafer 12 includes the bonding of the bonding wires 12A; the life of the light body. Further, since the precursor is formed in the cured resin layer 15, a mechanism for dispersing the phosphor in the liquid when the phosphor is operated in the white LED light-emitting device is not required, and the force is also reduced. In the present embodiment, when the wafer that emits ultraviolet light is used as the edge: m糸LED wafer 12, the resin layer is replaced by a three-layer structure: tree...6, and in each resin The layer disperses green, red, and blue. In the configuration of FIG. 4A, the resin layer 15 and the resin layer 16 are scattered with different colors of the working body, but in the present embodiment, the dispersion is 2001-l. 〇159-PF;Ahddub 21 200937684 The resin layer of phosphors with different colors is not two types of horses, but also layers

Three or more resin layers are laminated. For example, as shown in FIG. 4B, a plurality of resin layers 15a in which phosphors of the same color are dispersed may be imaginary (four) into the resin layer 15' or, as shown in FIG. 4C, a plurality of phosphor precursors in which different colors are dispersed may be used. The resin layers 16a to 16d constitute a resin layer. As described above, the resin layer 15 or 16 is formed of a plurality of resin layers in which phosphors of different colors are laminated, even in the blue LED crystal. 12 has a deviation of the emission wavelength or the luminance of the light, and can also suppress the color deviation of the white light caused by the deviation, thereby improving the yield of the white LED light-emitting device. In the 4B to 4C drawings, the same component symbols are attached to the parts previously described. (Fourth Embodiment) Fig. 5 is a view showing the configuration of a white LED light-emitting device 40 according to a fourth embodiment of the present invention. In the fifth embodiment, the parts corresponding to those described above are denoted by the same reference numerals, and the description thereof will be omitted. Referring to Fig. 5, the white LED light-emitting device 40 of the present embodiment is a modification of the white LED light-emitting device 10 previously described in Fig. 1, and is interposed between the resin layer 15 and the insulating liquid layer 14. A transparent resin layer 17 containing a phosphor. In other words, the transparent resin layer 17 is held by a notch portion (not shown) formed in the side wall portion of the container 13 by the same engaging portion 17A' as the engaging portion 15A. However, the aforementioned engaging portion 17 a and the corresponding notched portion are not essential and may be omitted. Also in this configuration, similarly to the above-described white LED light-emitting device 10, 2001-10159-PF; Ahddub 22 200937684' promotes cooling of the blue-based LED wafer 12, and improves the life of the LED wafer 12 including the bonding wires 12A. Further, since the phosphor is held in the cured resin layer 15, a mechanism for dispersing the phosphor in the liquid when the phosphor is operated in the white LED light-emitting device is not required, so that the configuration is simplified and the power consumption is also reduced. Further, in the configuration of the present embodiment, the cured sheet is used as the resin layer 15, the uncured resin is used as the transparent resin layer, and the cured sheet is placed on the uncured transparent resin. On the layer 17, 'the uncured resin layer 17 is hardened in this state, whereby excellent adhesion between the resin layer 17 and the resin layer 15 can be achieved. Further, a plurality of resin sheets containing phosphors of different colors at different concentrations are prepared, and a sheet which is most suitable for the light-emitting wavelength and the light-emitting luminance of the blue-based LED wafer is selected and combined with a blue-based LED wafer. Thereby, even if the light-emitting wavelength or the light-emitting luminance of the blue LED chip 12 is deviated, the color deviation of the white light due to the variation can be suppressed, and the yield of the white LED @ light-emitting device 10 can be improved. (First Modification) Here, as shown in Fig. 6, in the white LED light-emitting device 10 having the configuration of Fig. 1, the wiring patterns 11A and lic on the mounting substrate 11 are formed so as to continuously cover the mounting substrate n. The conductor film on the front surface and the back surface, whereby heat generated in the blue LED chip 12 is more efficiently escaped from the mounting substrate 11 to the wiring substrate 1 via the solder bump 2A (second deformation) Example) 2001-l〇i59-PF; Ahddub 23 200937684, Fig. 7 shows another modification of the white LED light-emitting device ι of the above-mentioned Fig. 1. Referring to Fig. 7', in the present embodiment, the bottom of the container 13 is continuously formed by the metal constituting the side wall portion of the container 13, and the blue LED chip 12 is directly attached to the bottom portion. In the configuration of Fig. 7, 'the bottom portion of the bottom portion is provided with a substrate 11S corresponding to the mounting substrate 11, and the blue portion [the upper electrode of the ED wafer 12 is connected to the substrate 11S via the bonding wire i 2A) The wiring patterns 11B are connected to each other, and the wiring patterns 11D provided on the bottom surface of the substrate 丨ls are connected to the patterns 3 on the wiring substrate 1 via the solder bumps 3A. (Third Modification) Fig. 8 shows another modification of the white LED light-emitting device 1 of the first drawing. Referring to Fig. 8, in the present embodiment, in the bottom portion 10 of the container 13, the blue LED chip 12 is surrounded by an insulator 121 such as polyimide which is formed by screen printing, and the insulator is surrounded. In place of the bonding wire 12A, a conductor pattern 12B formed by screen printing is formed as a wiring pattern. With this configuration, the wire bonding process is not required, and the manufacturing cost of the white LED light-emitting device can be further reduced. Further, with this configuration, the heat release efficiency of the heat generated by the blue-based LED wafer 12 is improved by using an insulating liquid or a sol. Further, the front bead conductor pattern 12B is formed by screen printing, whereby the wiring of the aforementioned conductor pattern 12B can be widened, and 2001-l〇159-PF; Ahddub 24 200937684. and the aforementioned blue is driven via the Au wire. In comparison with the case of the LED chip 12, the blue LED chip 丨2 can be driven with a large current. (Fifth Embodiment) Fig. 9 is a view showing the configuration of a white LED light-emitting device 10B according to a fifth embodiment of the present invention. Referring to Fig. 9, the white & LED light-emitting device 〇β is mounted on the wiring substrate 1 on which the wiring patterns 2 and 3 are carried via the solder bumps 22A and 23A, and includes: a mounting substrate 31; The substrate 31 is formed with a container 33 made of a metal such as Cu or A1 as a recess 33A along with the mounting substrate 31, and a blue LED chip 32 mounted on the mounting substrate 31 at the bottom of the recess 33A. . The recess 33A has a square shape having a side of, for example, 7 to 8 mm when viewed from a direction perpendicular to the mounting substrate 31, and has a depth of 2 to 5 mm. The mounting substrate 31 is made of a thermally conductive ceramics Q such as A1N or AIzO3, and has wiring patterns 31A and 31B supported thereon. The blue LEd wafer 32 is electrically connected to the mounting substrate 31. A lower electrode (not shown) is mounted on the surface of the wiring pattern 31A, and an upper electrode (not shown) is connected to the wiring pattern 31B by a bonding wire 32A. The blue LED chip emits violet-to-blue light having a wavelength of 350 to 48 〇 nm toward a direction substantially perpendicular to the surface of the mounting substrate 31. A conductor pattern 31C connected to the wiring pattern 31A is formed on the lower surface of the mounting substrate 31, and a lower portion of the blue LED wafer is electrically charged 2001-10159-PF; Ahddub 25 200937684 • the pole is transmitted through the solder bump 22A, The wiring pattern 2 on the wiring board 1 is electrically and thermally connected. Similarly, a conductor pattern 31D electrically and thermally connected to the wiring pattern 31β is formed on the lower surface of the mounting substrate 31, and an upper electrode of the blue LED wafer is transmitted through the bonding wire 32A and the solder bump 23A. It is connected to the aforementioned wiring pattern 3. For the blue LED chip 32, a product such as SL-V-B40AC sold by SEMILEds can be used. A heat-resistant insulating liquid such as an oxime oil is introduced into the bottom of the concave portion 33A so as to be immersed in the blue LED chip 32 and the bonding wire 32A, and the thickness is, for example, about 〇.丨 to about 3 mm. An insulating liquid layer 34 composed of an oxime oil. The fluorenone oil is preferably a heat-resistant temperature of 25 (rc or more). When the heat-resistant temperature of 250 ° C or higher is used as described above, the solder can be used at a temperature of about 1.25 (TC). The reflowing of the bumps 22A and 23A causes the white LED illuminating device to be applied to the wiring substrate 。. However, the reflowing step is performed only for a period of 20 to 30 seconds. Therefore, even if it is a lower heat-resistant insulating liquid, it can be used if it is resistant to the heat treatment. For the above-mentioned fluorenone oil, dimethyl hydrazine sold by, for example, Shin-Etsu Chemical Co., Ltd. can be used. Ketone oil, methyl phenyl fluorenone oil, etc. This may also be substituted for the above-mentioned oleic acid oil, and a sol sold by, for example, Shin-Etsu Chemical Co., Ltd. as a trade name of 0PT0SEAL (translated name) may be used. In the white lED light-emitting device 1B of the configuration of Fig. 9, in the recess 4 33A, 'on the insulating liquid layer %, for example, composed of fibers such as glass 2001-l 159-PF; Ahddub 26 200937684 fiber and Keep the phosphor (4) (4) #% is the above The transparent resin layer (10) composed of ': enamel resin or epoxy resin is formed on the fiber member 36 by a thickness of about ～. The transparent resin layer 35 has a fastening portion 35 on the side surface. And the corresponding notched portion 33 is formed on the side wall surface of the above-described cavity-receiving device 33 (refer to the second drawing). The extension is 兮, +, 4 a is the fastening portion 35A and the cutout portion 33B. Formation is not necessary and may be omitted.

Ο Fig. 10 shows the fiber member 36 in detail. Referring to Fig. 10, the fiber member 36 is made of a nonwoven fabric composed of a fiber 36F such as glass fiber, and is excited by the violet to blue light emitted from the blue M LED chip 32 between the fiber coffee and the fiber 36f. The white light YAG (Ji Ming Shi Quanshi, yttrium 31 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The non-woven fabric of the phosphor powder 36P is easily formed by dispersing a fiber material such as glass fiber with the carcass powder 36p dispersed in the solvent. The fiber member 36 is formed by the non-woven fabric as shown above. Or, if necessary, a plurality of laminated layers are formed. By providing the fiber member containing the phosphor powder 36P as described above, the blue-to-blue light system having a wavelength of 350 to 48 〇 nm emitted from the blue-based UD wafer is used. When passing through the fiber member 36, it is converted into white light. In the white LED light-emitting device 10B of Fig. 9, the refractive index of the fiber 36F is approximately the same as that of a glass or a silicate glass fiber such as boric acid glass. 1. 5 Therefore, in the case of the aforementioned insulating liquid layer 34, by using 2〇〇l'l〇159-PF; Ahddub 27 200937684 • using a liquid having an equivalent refractive index such as an oxime oil, the fiber can be substantially completely removed by the foregoing The effect of the refraction or scattering of the light obtained by 36F. Thereby, in the white LED light-emitting device 10B of Fig. 9, high light transmittance can be achieved. Further, when glass fiber or the like is used as the aforementioned fiber 36F Since the heat resistance temperature of the fiber 36F is about 50 (rc), even if the white LED light-emitting device 1?β is attached to the wiring board 1 by solder reflow, it is not affected. In the white LED light-emitting device, the blue system [the rib wafer 3 2 and the bonding wire 3 2 A are immersed in the insulating liquid layer 34 such as the olean oil, so that even the blue LED chip 32 is In the case where heat is generated by driving, stress is not applied to the blue LED chip 32 or the bonding wire 32A by the insulating liquid layer 34, and deterioration of the ED wafer 32 or deterioration of the bonding wire 32A can be avoided. White LED lighting package constructed in Figure 9 In the case of 1 〇β, since the insulating liquid layer 34 is a liquid, when the blue-based LED U wafer 32 is driven to generate heat, heat transfer due to convection occurs in the insulating liquid layer 34. The generated heat is efficiently delivered to the side wall portion of the container 33. A part of the heat that is transported to the side wall portion of the container 33 as described above is radiated to the atmosphere, and a part is transported to the side wall portion to the side wall portion. The mounting substrate 31 is further escaped to the wiring substrate 1 via the bump 22A having a function as a heat spreader. The side wall portion may be formed of a ceramic such as Al2〇3 or A1N having high thermal conductivity. In the present embodiment, the side wall portion of the container 33 is made of a metal having high thermal conductivity such as Cu or A1 2001-10159-PF; Ahddub 28 200937684, and the mounting substrate 31 is also thermally conductive such as Al2〇3 or A1N. The high-temperature ceramic is configured such that the heat generated by the blue-based LED chip 32 quickly escapes to the wiring substrate 1. Further, the bottom of the former device 33 may be formed of a material for a metal or ceramic or semiconductor package substrate. At this time, in the present embodiment, since the phosphor that converts the purple-to-basket light generated by the blue-based LED chip 32 into white light is held in the fiber member 36, it is not required to be as in Patent Document 2. The mechanism for agitating the liquid or the power source for use thereof, etc., is shown without excessive power consumption. In the above embodiment, the mounting of the white LED light-emitting device ι is caused by the reflow of the solder bumps 2A, 3A. Therefore, it is preferable to use heat resistance in the insulating liquid layer 34. The fluorenone oil, but the 疋 white LED illuminating device 1 can be used in the case where the heat treatment as described above is not applied, and a fluorine-based inert liquid which is more excellent in heat resistance but has better thermal conductivity φ can be used, for example, by Sumitomo. Product name sold by 3M

Fluor inert or the like. In this configuration, the blue LED chip 32 is directly mounted on the metal member constituting the bottom surface of the container 33, thereby promoting the escape of heat generated in the wafer 32. Next, the manufacturing steps of the white LED light-emitting device 10B of the above-described Fig. 9 will be described with reference to Figs. 11A to 11F. Here, in the first to the first IF diagrams, the same components are denoted by the same reference numerals, and the description thereof will be omitted. 2001-10159-PF; Ahddub 29 200937684 * Referring to FIG. 1U, the blue LED chip 32 is surface-mounted on the recess 33A of the mounting substrate 31 by the container 33, and the LED chip is formed by the bonding wire 32A. An upper electrode (not shown) of 32 is connected to the wiring pattern 313 on the mounting substrate 31. Next, in the step of Fig. 11B, the oxime oil is dropped from the nozzle 211 in the concave portion 33A to form an insulating liquid layer 24 covering the blue LED chip 32 and the bonding wire 32A. Next, in the step of FIG. 11C: in the concave portion 33A, the fibrous member 36 for holding the phosphor powder described above is placed on the insulating liquid layer 34, and the insulating member is impregnated into the fibrous member 36. The liquid layer 34 is vacuum degassed in the step of Fig. 11D. Among them, depending on the type of the insulating liquid constituting the insulating liquid layer 34, the vacuum degassing step of Fig. 11D may be omitted. Next, in the step of Fig. 11E, the uncured fluorenone resin or epoxy resin is dropped from the nozzle 311 to form an uncured resin layer 35m. Since the unhardened resin layer is lighter in specific gravity than the insulating liquid layer 34 below it, the insulating resin layer 34 is diffused on the fiber member 36 in the dripped state to form the uncured resin. Layer 35m. Among them, the use of an uncured epoxy resin instead of the aforementioned uncured fluorenone resin is also the same. The uncured resin layer 35m dropped as described above is immersed in the notch portion 33B formed on the side wall surface of the metal container 13, and the above-described fastening portion 35A is formed. In the step of Fig. 11D, since the uncured resin layer 35m has high viscosity, the fiber member u is not impregnated into the uncured resin layer 35n. 2001-10159-pF; Ahddub 30 200937684 Further, when the concave portion 33A is filled with the uncured resin layer 35m, a vacuum degassing step is performed in the step of FIG. 11F, and the insulating liquid layer is formed in the insulating liquid layer 34. The interface between the 34-blue LED wafer 32, the interface between the insulating liquid layer 34 and the uncured resin layer 35m, and the air bubbles in the uncured resin layer 35m are removed. Further, in the step of Fig. 11G, the structure obtained in the step of the above-mentioned first step is heat-treated, for example, at 150 ° C, whereby the uncured resin layer 35m is hardened to be changed into the resin layer 35. Further, the structure of Fig. 11G is mounted on the wiring board 1 described above, whereby the apparatus including the white led light-emitting device 1 〇 B described in Fig. 9 is obtained. In the above, the case where the resin layer 35 is a linaloyl resin is described, but other resin such as an epoxy resin may be used for the resin layer 35. In the present invention, the resin layer not containing the phosphor described above is dripped on the insulating liquid layer 34 in an uncured state to be hardened, whereby a white LED light-emitting device 1B can be formed. Simplify the manufacturing steps of the white LED illuminator. Especially in the unhardened state as shown above

In the notch portion 3B formed on the wall surface of the container 33, the resin layer formed by curing the resin layer Mm as described above is not subjected to special subsequent treatment or seizing treatment, that is, covering The liquid-repellent layer 34 is fixed to prevent the liquid leakage of the insulating liquid layer 34 from occurring. The fiber member 36 is not impregnated with the insulating liquid layer 34 and contains 2〇〇1'1〇59-PF; Ahddub 31 200937684^The light portion of the control standard sample with air is taken out and the conversion efficiency is higher than that of the father. In the LED light-emitting device of the embodiment of the present invention, the conversion efficiency of the above-mentioned light is 2-5 times higher than that of the above-mentioned light. "Efficiency" refers to the efficiency at which the output of the blue LED chip 32 is taken out from the white led area as a self-contained money.

In the embodiment of the ninth embodiment, the position of the fiber member 36 is not limited to the interface between the insulating liquid layer 34 and the resin layer 35, and may be formed in the insulating liquid layer 34. internal. Further, a sol layer may be used as the insulating liquid layer %. (Embodiment 6) Figs. 12A to 12D are views showing a manufacturing procedure of a white LED light-emitting device 60 according to a sixth embodiment of the present invention. Referring to Fig. 12A, in the first embodiment, the dome member 4 is formed by the fiber member 26 holding the phosphor in the same manner as the fiber member 26 of the ninth embodiment, and then shown in Fig. 12B. 'The uncured resin layer 42m is adhered to the aforementioned dome-shaped member 41. The uncured resin layer 42m has a large viscosity as in the previous embodiment, and the dome-shaped member 41 does not impregnate the uncured resin layer 4 even if the uncured resin layer 42m is held as described above. 2 m situation. Next, in the step of Fig. 12C, the structure of Fig. 12B is such that the blue LED wafer 44 is mounted on the surface-mounted mounting substrate 43 and heated to harden the uncured resin layer 42. . In the first 2C, it is understood that the blue LED chip 44 is mounted on the above-mentioned mounting 2001-l〇i59-PF; Ahddub 32 200937684 substrate 4 3; yf QA, A on the upper electrode by bonding The wire 45 is connected to the other electrode 43A on the mounting substrate 43 4d. Further, electrodes 43C and 43D which are electrically connected to the electrodes 43A and the electrodes are formed on the lower surface of the mounting substrate 43. In the structure of Fig. 12C, the space I communicates with the space inside the dome-shaped member 41, and openings 42a and 42B are formed. Then, the structure of the first embodiment is immersed in the insulating liquid 46 similar to the insulating liquid crucible 24, and the internal space of the dome-shaped member 41 is vacuum-exhausted from the opening 42B. The insulating liquid 46 is guided to the above (4) by the opening 42A, and the space is filled with the liquid 46. In this state, the white LED light-emitting device 40 shown in Fig. 12E is obtained by encapsulating the openings 42A and 42β. (Seventh Embodiment) Next, a manufacturing procedure of a white LED light-emitting device according to a seventh embodiment of the present invention will be described with reference to Figs. 13A to 13F. In the drawings, the same reference numerals are given to the portions described in the drawings, and the description thereof is omitted. Referring to FIG. 13A', the blue-based lED wafer 12 is surface-mounted by the recess 13A formed by the container 13 on the mounting substrate I!, and the upper electrode of the LED wafer 12 is bonded by the bonding wire 12A (not shown). The display is connected to the wiring pattern 11B on the mounting substrate 11. Next, in the step of Fig. 13B, the gas is immersed in the concave portion 13A from the nozzle 210 to form an insulation covering the blue LED wafer 12 and the bonding wires 2001'l〇i59-PF; Ahddub 33 200937684. 12A. Liquid layer 14. Wherein, in the step of the above FIG. 13B, the formation of the insulating liquid layer 14 or the sol layer may be replaced, as shown in the modification of FIG. 14 by using a screen printing mask 41 0M and scraping. The screen printing of the squeegee 411M is formed by moving the squeegee 411M in the direction of the arrow. Next, after performing the degassing step in the step of FIG. 13C, in the step of FIG. 13D, 'on the concave portion 13A, the insulating liquid layer 14 is formed by using the screen printing mask 41 0 and the squeegee 411. In the screen printing, the squeegee 411 is moved in the direction of the arrow, thereby filling the uncured fluorenone resin or epoxy resin 15M previously blended with the phosphor powder to form an uncured resin layer 15m. . The squeegee 411 and the screen printing mask 410 may be the same as the squeegee 411 and the screen printing mask 41 0 used in the step of Fig. 14. Since the uncured resin layer 1 5 is lighter than the insulating liquid layer 14 below it, the uncured state is spread over the insulating liquid layer 14 to form the uncured resin layer. The same is true for the hardened epoxy resin to replace the aforementioned uncured fluorenone resin. The uncured resin layer 15n1 dropped as described above is immersed in the notch portion i 3 形成 formed on the side wall surface of the metal container 13, and the above-described fastening portion 15A is formed, wherein the vacuum degassing step of the aforementioned 13C is It is omitted depending on the type of insulating liquid or sol used. Further, when the recessed portion 13A is filled with the uncured resin layer 15m, a vacuum degassing step is performed in the step of FIG. 13E, in the insulating liquid layer 14, the insulating liquid layer Μ and the blue-based LED wafer 1 The interface of 2, the boundary of the insulating liquid layer 14 and the uncured resin layer 15m, 200l-i〇i59-PF; Ahddub 34 200937684., and the bubbles in the uncured resin layer 15m are removed. Further, in the step of Fig. 13F, the structure obtained in the step of the above Fig. 3E is heat-treated at 150 ° C, for example, whereby the unhardened resin layer 15 m is hardened and changed into the resin layer 15. Further, the structure of the first 3F diagram is mounted on the wiring board ,, whereby the apparatus including the white LED light-emitting device 10 previously described in Fig. 1 is obtained. The present invention has been described with reference to the preferred embodiments. However, the present invention is not limited to the specific embodiment, and various modifications and changes can be made within the scope of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a configuration of a white LED light-emitting device according to a first embodiment of the present invention. Figure 2A shows the first figure (1). Figure 2B shows the figure (2). Figure 2C shows the figure (3). 2D is a manufacturing step of the white LED light-emitting device of the first embodiment of the present invention. FIG. 2 is a manufacturing step of the white LED light-emitting device. The manufacturing steps of the white LED light-emitting device are as follows: 2001-10159-PF; Ahddub 35 200937684 . Figure (4). Fig. 2E is a view showing the manufacturing steps of the white LED light-emitting device of Fig. 1 (part 5). Fig. 2F shows the white of Fig. 1 [manufacturing step of the ED illuminating device (6). Fig. 3 is a partial view showing the configuration of a white [ED light-emitting device] according to a second embodiment of the present invention. Fig. 4A is a view showing the configuration of a white [ED light-emitting device" according to a third embodiment of the present invention. Fig. 4B is a view showing the configuration of a white LED light-emitting device according to a modification of the third embodiment. Fig. 4C is a view showing the configuration of a white LED light-emitting device according to another modification of the third embodiment. Fig. 5 is a view showing the configuration of a white LED light-emitting device according to a fourth embodiment of the present invention. 〇 Fig. 6 is a view showing a modification of the white LED light-emitting device of Fig. 1. Fig. 7 is a view showing another modification of the white LED light-emitting device of Fig. 1. Fig. 8 is a view showing another modification of the white & LED light-emitting device of Fig. 1. Fig. 9 is a view showing the configuration of a white LED light-emitting device according to a fifth embodiment of the present invention. Fig. 1 is an enlarged view showing a white LED of a fifth embodiment of the present invention, 2001-10159-PF; Ahddub 36 200937684, a partial view of an optical device. Fig. 1U is a diagram showing the manufacturing steps of the white LED light-emitting device of Fig. 9 (1). Fig. 11B is a view showing the manufacturing steps (Fig. 2) of the white LED light-emitting device of Fig. 9. The UC diagram shows a manufacturing step (Fig. 3) of the white LED light-emitting device of Fig. 9.

❹ The UD diagram shows a manufacturing step (Fig. 4) of the white LED light-emitting device of Fig. 9. The UE map shows a manufacturing step (Fig. 5) of the white LED light-emitting device of Fig. 9. The UF diagram shows a manufacturing step (Fig. 6) of the white LED light-emitting device of Fig. 9. The UG diagram shows a manufacturing step (Fig. 7) of the white LED light-emitting device of Fig. 9. Fig. 12A is a diagram (1) of a white LED light-emitting device according to a sixth embodiment of the present invention. Figure 12B shows the system + 士义义. η shows a configuration diagram (2) of the white LED light-emitting device of the sixth embodiment of the present invention. Fig. 12C is a view showing the configuration of a white LED light-emitting device according to a sixth embodiment of the present invention (part 3). Fig. 12D is a view showing the configuration (4) of the white LED light-emitting device of the sixth embodiment of the present invention. Fig. 12E is a view showing a white LED illumination according to a sixth embodiment of the present invention 2001-10159-PF; Ahddub 37 200937684 * A configuration diagram of the device (part 5). Fig. 13A is a view showing a configuration (1) of a white LED light-emitting device according to a seventh embodiment of the present invention. Fig. 13B is a view showing a configuration (2) of a white LED light-emitting device according to a seventh embodiment of the present invention. Fig. 13C is a view showing the configuration of a white LED light-emitting device according to a seventh embodiment of the present invention (part 3). Fig. 13D is a view showing a configuration (4) of a white LED light-emitting device according to a seventh embodiment of the present invention. Fig. 13E is a view showing the configuration of a white LED light-emitting device according to a seventh embodiment of the present invention (part 5). Fig. 13F is a view showing the configuration of a white LED light-emitting device according to a seventh embodiment of the present invention (the sixth embodiment). Fig. 14 is a view showing a modification of the embodiment of Fig. 7. ❿ [Main component symbol description] 1~ wiring substrate; 2, 3~ wiring pattern; 11, 11S, 31, 43~ mounting substrate; 12A, 32A, 45~ bonding wire; 12B~ conductor pattern; 12G~ groove; 121~ Insulator; 13, 33~ container; 13A, 33A~ recess; 13B, 33B~ notch; 14, 34~ insulating liquid layer; 15M~unhardened resin; 17~ resin layer not containing phosphor; Other resin layer; 26, 36, 4 fiber member; 36F~ fiber; 2001-10159-PF; Ahddub 38 200937684 • 36P~ phosphor powder, 41~ dome-shaped member; 43A, 43B, 43C, 43D~ electrode ; 42A, 42BH mouth; 21 0, 310, 211, 311 ~ nozzle; 46 ~ insulating liquid; 410, 41 0M ~ screen printing mask; 411, 411M ~ scraper; 12, 32, 44 ~ blue LED chip; 15A, 16A, 17A, 35A~ fastening portion; 15m, 35m, 42m~ uncured resin layer; 2A, 3A, 22A, 23A~ solder bump; ® 15, 15a to 15d, 16a to 16d, 35, 42 ~ resin layer; 10, 10B, 20, 30, 40, 60 ~ white LED light-emitting device; 11A, 11B, 11C, 111), 31 eight, 316, 310 311) ~Wiring pattern Ο 2001-10159-PF; Ahddub 39

Claims (1)

200937684 X. Patent application scope: A white light-emitting diode device is characterized in that it comprises: a valley device having a concave portion; a blue light-emitting diode (led) wafer mounted on the bottom of the concave portion; Or a sol just described as a blue light-emitting diode crystal; and a transparent resin layer, which is formed on the outer side of the insulating liquid or sol layer, and encapsulates the insulating liquid or The layer of the sol has a specific gravity smaller than that of the insulating liquid or the sol, and a phosphor is dispersed in the transparent resin layer. 2. The white light-emitting diode package η according to claim i, wherein the blue light-emitting diode chip has a name concave-convex pattern on a surface in contact with the insulating liquid or the layer of the sol, and the insulating layer The layer of the liquid or the gum is in close contact with the aforementioned concave and convex pattern. 3 · If the application of the patent scope is set to 1 in a white light-emitting diode package, the layer of the insulating liquid or the sol is composed of a lanthanide liquid. 4. Wherein, the white light-emitting diodes of a, +, and the <<>> are formed of phase oil. The layer of the liquid is composed of phase oil. The first light-emitting liquid or layer of the layer of the transparent resin layer-based packaging sol is layered, and the layers of the plurality of layers are: The plural "knife" on the 1st floor has the different phosphors of the 2001-l〇159-PF; Ahddub 4〇200937684 light color. 6. If the patent application scope is 丨番甘士a, +, a / The white light-emitting diode is mounted, and the polar body wafer is impregnated in the layer of the insulating liquid or sol, by A, Shou, and Xia оо 6 > The bonding wires in the layer of the liquid or the sol are electrically connected. 7 · The white light emitting diode device described in the patent application, wherein the blue light emitting diode wafer is dipped In the layer of the insulating liquid or sol, in the layer of the needle, the +, the insulating liquid or the sol, by using the screen printing method, the electric pattern is used for electrical properties. It is connected, and it is around the blue light-emitting diode crystal H piece of the moonlight Screen printing forms a pattern of 5's of imine. 8. A white light-emitting diode body is characterized by: it consists of: blue-based first-pole wafer. Insulating liquid or sol is a layer of 'surrounding the blue light-emitting diode wafer; and a transparent resin layer, encapsulating the layer of the insulating liquid or sol, in the layer of the insulating liquid or sol, or the layer of the insulating liquid or sol and the transparent tree Between the M + i and the 曰 layer, there is a fiber which retains the phosphor. 9. The white light-emitting diode device according to claim 8 of the patent scope, wherein the transparent resin layer has an insulation property as described above. A small specific gravity of a liquid or a sol. 10. A method for producing a white light-emitting diode split, comprising: a blue light-emitting diode wafer 2001-10159- mounted on the bottom of each of the eight concaves. a step of PF; Ahddub 41 200937684; a step of electrically wiring the blue light-emitting diode chip by a bonding wire; and filling the blue light-emitting diode wafer and the bonding wire in the concave portion a step of forming an insulating liquid or a layer of an insulating liquid or a sol; applying an uncured resin material to the layer of the insulating liquid or sol to form an uncured resin layer; and forming the uncured resin layer The method of manufacturing a white light-emitting diode device according to claim 10, wherein the step of filling the insulating liquid or the sol and the step of applying the uncured resin material are Executed by screen printing. 2001-10159-PF; Ahddub 42