TW200937611A - Optoelectronic component and production method for an optoelectronic component - Google Patents

Optoelectronic component and production method for an optoelectronic component Download PDF

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Publication number
TW200937611A
TW200937611A TW097149361A TW97149361A TW200937611A TW 200937611 A TW200937611 A TW 200937611A TW 097149361 A TW097149361 A TW 097149361A TW 97149361 A TW97149361 A TW 97149361A TW 200937611 A TW200937611 A TW 200937611A
Authority
TW
Taiwan
Prior art keywords
protective layer
region
elements
electromagnetic radiation
optically active
Prior art date
Application number
TW097149361A
Other languages
English (en)
Chinese (zh)
Inventor
Bert Braune
Matthias Rebhan
Norbert Stath
Walter Wegleiter
Karl Weidner
Hans Wulkesch
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200937611A publication Critical patent/TW200937611A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Luminescent Compositions (AREA)
TW097149361A 2007-12-21 2008-12-18 Optoelectronic component and production method for an optoelectronic component TW200937611A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007062045 2007-12-21
DE102008019902A DE102008019902A1 (de) 2007-12-21 2008-04-21 Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement

Publications (1)

Publication Number Publication Date
TW200937611A true TW200937611A (en) 2009-09-01

Family

ID=40690073

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097149361A TW200937611A (en) 2007-12-21 2008-12-18 Optoelectronic component and production method for an optoelectronic component

Country Status (8)

Country Link
US (1) US8513682B2 (https=)
EP (1) EP2223337B1 (https=)
JP (1) JP5372009B2 (https=)
KR (1) KR101523408B1 (https=)
CN (1) CN101904005B (https=)
DE (1) DE102008019902A1 (https=)
TW (1) TW200937611A (https=)
WO (1) WO2009079985A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008045653B4 (de) * 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102009009483A1 (de) * 2009-02-19 2010-08-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beleuchtungseinrichtung und Beleuchtungseinrichtung
DE102009042205A1 (de) * 2009-09-18 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
DE102009058796A1 (de) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
DE102010046790A1 (de) * 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102010055265A1 (de) * 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102012101160A1 (de) * 2012-02-14 2013-08-14 Osram Opto Semiconductors Gmbh Lichtquellenmodul
DE102012102301B4 (de) * 2012-03-19 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Scheinwerfer mit einem solchen Halbleiterchip
DE102012215524A1 (de) 2012-08-31 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
AT14563U1 (de) * 2014-03-31 2016-01-15 At&S Austria Technologie & Systemtechnik Ag Verfahren zur Herstellung einer Leiterplatte mit zumindest einer optoelektronischen Komponente
US10388684B2 (en) 2016-10-04 2019-08-20 Semiconductor Components Industries, Llc Image sensor packages formed using temporary protection layers and related methods
CN110301076B (zh) * 2017-02-21 2021-06-08 亮锐控股有限公司 包括多个vcsel的光源阵列
WO2019170214A1 (en) * 2018-03-05 2019-09-12 Osram Opto Semiconductors Gmbh Light-emitting device and method for producing a plurality of light-emitting devices
JP6846017B2 (ja) * 2018-06-08 2021-03-24 日亜化学工業株式会社 発光装置およびその製造方法
DE102019121881A1 (de) * 2019-08-14 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Family Cites Families (21)

* Cited by examiner, † Cited by third party
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JPS5577876U (https=) * 1978-11-24 1980-05-29
JPS60253286A (ja) * 1984-05-29 1985-12-13 Rohm Co Ltd メサエツチング分離型モノリシツク表示発光ダイオ−ド
JPS62199073A (ja) * 1986-02-27 1987-09-02 Yokogawa Medical Syst Ltd 発光ダイオ−ドアレイ
JPS6471187A (en) * 1987-09-11 1989-03-16 Stanley Electric Co Ltd Light emitting diode array
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
DE59814431D1 (de) 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
JPH11238915A (ja) * 1998-02-19 1999-08-31 Stanley Electric Co Ltd 発光ダイオードアレイ
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US7547921B2 (en) * 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
KR20040029385A (ko) * 2001-08-01 2004-04-06 남 영 김 화상표시장치
JP3724725B2 (ja) * 2001-11-01 2005-12-07 ソニー株式会社 表示装置の製造方法
JP2003209280A (ja) 2002-01-11 2003-07-25 Hitachi Cable Ltd 発光ダイオードアレイ
DE10339985B4 (de) * 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
DE102004021233A1 (de) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP4667803B2 (ja) 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
DE102004050371A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US20060082297A1 (en) * 2004-10-19 2006-04-20 Eastman Kodak Company Method of preparing a lens-less LED
DE102005041099A1 (de) * 2005-08-30 2007-03-29 Osram Opto Semiconductors Gmbh LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik
DE102006015115A1 (de) 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Elektronisches Modul und Verfahren zum Herstellen eines elektronischen Moduls
DE102007011123A1 (de) 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul

Also Published As

Publication number Publication date
JP2011507198A (ja) 2011-03-03
DE102008019902A1 (de) 2009-06-25
EP2223337A2 (de) 2010-09-01
KR20100114042A (ko) 2010-10-22
WO2009079985A2 (de) 2009-07-02
US20100301355A1 (en) 2010-12-02
CN101904005A (zh) 2010-12-01
EP2223337B1 (de) 2018-08-29
US8513682B2 (en) 2013-08-20
CN101904005B (zh) 2013-11-27
JP5372009B2 (ja) 2013-12-18
KR101523408B1 (ko) 2015-05-27
WO2009079985A3 (de) 2009-10-15

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