TW200935727A - High-frequency amplifier, high-frequency module, and mobile wireless apparatus using the same - Google Patents
High-frequency amplifier, high-frequency module, and mobile wireless apparatus using the sameInfo
- Publication number
- TW200935727A TW200935727A TW97147825A TW97147825A TW200935727A TW 200935727 A TW200935727 A TW 200935727A TW 97147825 A TW97147825 A TW 97147825A TW 97147825 A TW97147825 A TW 97147825A TW 200935727 A TW200935727 A TW 200935727A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- high frequency
- circuit
- terminal
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000003321 amplification Effects 0.000 claims description 21
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 230000001965 increasing effect Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007319512 | 2007-12-11 | ||
| JP2008240697A JP2009165100A (ja) | 2007-12-11 | 2008-09-19 | 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200935727A true TW200935727A (en) | 2009-08-16 |
Family
ID=40967133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97147825A TW200935727A (en) | 2007-12-11 | 2008-12-09 | High-frequency amplifier, high-frequency module, and mobile wireless apparatus using the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2009165100A (enrdf_load_stackoverflow) |
| TW (1) | TW200935727A (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013094416A1 (ja) | 2011-12-22 | 2013-06-27 | 株式会社村田製作所 | 高周波モジュール及びそれを用いた携帯端末 |
| JP6043599B2 (ja) * | 2012-11-15 | 2016-12-14 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | バイアス回路、および増幅装置 |
| US9214902B2 (en) * | 2013-08-27 | 2015-12-15 | Triquint Semiconductor, Inc. | Bias-boosting bias circuit for radio frequency power amplifier |
| US10103691B2 (en) * | 2016-01-27 | 2018-10-16 | Mediatek Inc. | Power amplifier system and associated bias circuit |
| JP2018033028A (ja) | 2016-08-25 | 2018-03-01 | 株式会社村田製作所 | 電力増幅回路 |
| CN107894804B (zh) * | 2017-12-26 | 2023-10-24 | 上海新进芯微电子有限公司 | 一种带隙基准稳压源及改善其负载响应特性的系统 |
| WO2021250870A1 (ja) * | 2020-06-11 | 2021-12-16 | 株式会社ソシオネクスト | 増幅回路、差動増幅回路、受信回路及び半導体集積回路 |
| CN114513225B (zh) * | 2022-02-23 | 2024-05-03 | 上海山景集成电路股份有限公司 | 收发复用放大电路及可重构收发通信系统 |
| CN217428086U (zh) * | 2022-06-01 | 2022-09-13 | 深圳飞骧科技股份有限公司 | 温度补偿偏置电路和功率放大器 |
| CN115903978B (zh) * | 2022-11-10 | 2025-02-07 | 陕西航空电气有限责任公司 | 一种适应宽输入电压的稳压电路 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0567139A (ja) * | 1991-09-10 | 1993-03-19 | Matsushita Electric Ind Co Ltd | 通訳装置 |
| JP2001094362A (ja) * | 1999-09-21 | 2001-04-06 | Matsushita Electric Ind Co Ltd | 送信アンプ |
| US6452456B1 (en) * | 2000-11-16 | 2002-09-17 | Texas Instruments Incorporated | Fast-setting, low power, jammer insensitive, biasing apparatus and method for single-ended circuits |
| JP2002171193A (ja) * | 2000-11-30 | 2002-06-14 | Kyocera Corp | 高周波モジュール基板 |
| US6492874B1 (en) * | 2001-07-30 | 2002-12-10 | Motorola, Inc. | Active bias circuit |
-
2008
- 2008-09-19 JP JP2008240697A patent/JP2009165100A/ja active Pending
- 2008-12-09 TW TW97147825A patent/TW200935727A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009165100A (ja) | 2009-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200935727A (en) | High-frequency amplifier, high-frequency module, and mobile wireless apparatus using the same | |
| US7061314B2 (en) | High linearity doherty communication amplifier with phase control | |
| JP3663397B2 (ja) | 高周波電力増幅器 | |
| JP3977339B2 (ja) | 高周波電力増幅回路および通信用電子部品 | |
| US7714657B2 (en) | Low noise amplifier gain controlled scheme | |
| US7715812B2 (en) | RF power amplifier | |
| US20150326326A1 (en) | RF Transmit Path Calibration via On-Chip Dummy Load | |
| JP2009165100A5 (enrdf_load_stackoverflow) | ||
| JP2006013566A (ja) | 高周波電力増幅用電子部品 | |
| WO2021161928A1 (ja) | 電力増幅回路、高周波回路及び通信装置 | |
| US11601096B2 (en) | Power amplifier module, frontend circuit, and communication device | |
| US11201595B2 (en) | Cascode power amplifier with switchable output matching network | |
| JP6182937B2 (ja) | 電力増幅器及び通信装置 | |
| KR20150136978A (ko) | 병렬 이미터 폴로어를 갖는 개선된 전력 증폭기 바이어스 회로 | |
| US20180342992A1 (en) | Power amplifier circuit | |
| JP2005516444A6 (ja) | 補償されたｒｆ増幅器デバイス | |
| JP2005516444A (ja) | 補償されたｒｆ増幅器デバイス | |
| JP7258612B2 (ja) | 高周波回路 | |
| JP2025504243A (ja) | 温度補償バイアス回路及び電力増幅器 | |
| CN107666292A (zh) | 功率放大模块 | |
| US7944306B2 (en) | Dual bias control circuit | |
| WO2021161721A1 (ja) | 電力増幅回路、高周波回路及び通信装置 | |
| CN116508259A (zh) | 射频（rf）放大器偏置电路 | |
| JP2005045440A (ja) | 電力増幅器及びこれを用いた無線通信装置 | |
| EP3909127B1 (en) | Bias circuit and power amplifier circuit |