TW200933653A - Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials - Google Patents

Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials

Info

Publication number
TW200933653A
TW200933653A TW97140248A TW97140248A TW200933653A TW 200933653 A TW200933653 A TW 200933653A TW 97140248 A TW97140248 A TW 97140248A TW 97140248 A TW97140248 A TW 97140248A TW 200933653 A TW200933653 A TW 200933653A
Authority
TW
Taiwan
Prior art keywords
composition
glass
thick film
silver
conductor
Prior art date
Application number
TW97140248A
Other languages
English (en)
Chinese (zh)
Inventor
Alan Frederick Carroll
Kenneth Warren Hang
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200933653A publication Critical patent/TW200933653A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
  • Electrodes Of Semiconductors (AREA)
TW97140248A 2007-10-18 2008-10-20 Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials TW200933653A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98094407P 2007-10-18 2007-10-18

Publications (1)

Publication Number Publication Date
TW200933653A true TW200933653A (en) 2009-08-01

Family

ID=40280849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97140248A TW200933653A (en) 2007-10-18 2008-10-20 Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials

Country Status (7)

Country Link
US (1) US8226856B2 (enExample)
EP (1) EP2203921A1 (enExample)
JP (1) JP2011501866A (enExample)
KR (1) KR101207693B1 (enExample)
CN (1) CN101821816A (enExample)
TW (1) TW200933653A (enExample)
WO (1) WO2009052460A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461496B (zh) * 2010-07-30 2014-11-21 Lg Innotek Co Ltd 太陽能電池及用於其之背電極的漿料組合物

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102251281B (zh) * 2006-03-01 2013-01-16 三菱瓦斯化学株式会社 采用液相生长法的ZnO单晶的制造方法
EP2193527A1 (en) * 2007-10-18 2010-06-09 E. I. du Pont de Nemours and Company Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
WO2009052266A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
JP5493468B2 (ja) * 2009-05-26 2014-05-14 三菱マテリアル株式会社 スーパーストレート型薄膜太陽電池用の導電性反射膜及びその製造方法
JP5493469B2 (ja) * 2009-05-26 2014-05-14 三菱マテリアル株式会社 スーパーストレート型薄膜太陽電池用の複合膜及びその製造方法
KR101139459B1 (ko) 2009-08-27 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법
WO2012054244A1 (en) 2010-10-19 2012-04-26 Air Products And Chemicals, Inc. A conductive composition and conductive feature formed at low temperatures
WO2012054245A1 (en) * 2010-10-19 2012-04-26 Air Products And Chemicals, Inc. A conductive composition and method for making conductive features on thin film pv cells
CN102157219B (zh) * 2011-01-12 2012-06-27 西安银泰新能源材料科技有限公司 晶体硅太阳能电池正面电极银浆及其制备方法
JP2012209148A (ja) * 2011-03-30 2012-10-25 Sony Corp 導電性粒子、導電性ペースト、及び、回路基板
KR20140090607A (ko) * 2011-09-29 2014-07-17 가부시키가이샤 노리타케 캄파니 리미티드 태양 전지용 무연 도전성 페이스트 조성물
CN102751000B (zh) * 2012-06-16 2015-05-06 合肥圣达电子科技实业公司 一种压电陶瓷用无铅无镉电极银浆料及其制备方法
US10069021B2 (en) * 2012-10-12 2018-09-04 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes with salts with an anion consisting of halogen and oxygen in solar cell applications
US10158032B2 (en) * 2012-10-12 2018-12-18 Heraeus Deutschland GmbH & Co. KG Solar cells produced from high Ohmic wafers and halogen containing paste
US20160204303A1 (en) * 2013-08-21 2016-07-14 Gtat Corporation Using an active solder to couple a metallic article to a photovoltaic cell
CN103951263A (zh) * 2014-04-22 2014-07-30 江苏太阳新材料科技有限公司 一种太阳能电池正面银电极用玻璃粉及其制备方法
US10636540B2 (en) 2015-03-27 2020-04-28 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising an oxide additive
US10056508B2 (en) * 2015-03-27 2018-08-21 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising a metal compound
GB201507148D0 (en) * 2015-04-27 2015-06-10 Johnson Matthey Plc Conductive paste, electrode and solar cell
KR101859017B1 (ko) 2015-12-02 2018-05-17 삼성에스디아이 주식회사 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지
JP6947119B2 (ja) * 2018-05-14 2021-10-13 トヨタ自動車株式会社 正極活物質およびフッ化物イオン電池
CN114334214B (zh) * 2021-12-31 2024-08-13 深圳先进电子材料国际创新研究院 一种导电银浆及其制备方法和应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4625848B1 (enExample) 1966-04-15 1971-07-26
JP2001118425A (ja) * 1999-10-21 2001-04-27 Murata Mfg Co Ltd 導電性ペースト
US7435361B2 (en) 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US7556748B2 (en) 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
JP4807063B2 (ja) 2005-12-20 2011-11-02 ソニー株式会社 復号装置、制御方法、およびプログラム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461496B (zh) * 2010-07-30 2014-11-21 Lg Innotek Co Ltd 太陽能電池及用於其之背電極的漿料組合物

Also Published As

Publication number Publication date
US8226856B2 (en) 2012-07-24
EP2203921A1 (en) 2010-07-07
US20090107544A1 (en) 2009-04-30
WO2009052460A1 (en) 2009-04-23
KR101207693B1 (ko) 2012-12-03
KR20100080613A (ko) 2010-07-09
JP2011501866A (ja) 2011-01-13
CN101821816A (zh) 2010-09-01

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