KR101207693B1 - 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: 플럭스 재료 - Google Patents

반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: 플럭스 재료 Download PDF

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KR101207693B1
KR101207693B1 KR1020107010785A KR20107010785A KR101207693B1 KR 101207693 B1 KR101207693 B1 KR 101207693B1 KR 1020107010785 A KR1020107010785 A KR 1020107010785A KR 20107010785 A KR20107010785 A KR 20107010785A KR 101207693 B1 KR101207693 B1 KR 101207693B1
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composition
thick film
glass
silver
insulating film
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KR20100080613A (ko
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알란 프레데릭 캐롤
케네쓰 워런 행
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이 아이 듀폰 디 네모아 앤드 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Glass Compositions (AREA)
KR1020107010785A 2007-10-18 2008-10-20 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: 플럭스 재료 Expired - Fee Related KR101207693B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98094407P 2007-10-18 2007-10-18
US60/980,944 2007-10-18

Publications (2)

Publication Number Publication Date
KR20100080613A KR20100080613A (ko) 2010-07-09
KR101207693B1 true KR101207693B1 (ko) 2012-12-03

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KR1020107010785A Expired - Fee Related KR101207693B1 (ko) 2007-10-18 2008-10-20 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: 플럭스 재료

Country Status (7)

Country Link
US (1) US8226856B2 (enExample)
EP (1) EP2203921A1 (enExample)
JP (1) JP2011501866A (enExample)
KR (1) KR101207693B1 (enExample)
CN (1) CN101821816A (enExample)
TW (1) TW200933653A (enExample)
WO (1) WO2009052460A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1997941B1 (en) * 2006-03-01 2014-12-17 Mitsubishi Gas Chemical Company, Inc. PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
KR20100080614A (ko) * 2007-10-18 2010-07-09 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정： Ｍｇ-함유 첨가제
WO2009052271A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
JP5493468B2 (ja) * 2009-05-26 2014-05-14 三菱マテリアル株式会社 スーパーストレート型薄膜太陽電池用の導電性反射膜及びその製造方法
JP5493469B2 (ja) * 2009-05-26 2014-05-14 三菱マテリアル株式会社 スーパーストレート型薄膜太陽電池用の複合膜及びその製造方法
KR101139459B1 (ko) * 2009-08-27 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법
KR101181190B1 (ko) * 2010-07-30 2012-09-18 엘지이노텍 주식회사 태양 전지 및 이의 후면 전극용 페이스트 조성물
WO2012054244A1 (en) 2010-10-19 2012-04-26 Air Products And Chemicals, Inc. A conductive composition and conductive feature formed at low temperatures
US9530925B2 (en) 2010-10-19 2016-12-27 Air Products And Chemicals, Inc. Conductive composition and method for making conductive features on thin film PV cells
CN102157219B (zh) * 2011-01-12 2012-06-27 西安银泰新能源材料科技有限公司 晶体硅太阳能电池正面电极银浆及其制备方法
JP2012209148A (ja) * 2011-03-30 2012-10-25 Sony Corp 導電性粒子、導電性ペースト、及び、回路基板
US20140239238A1 (en) * 2011-09-29 2014-08-28 Noritake Co., Limited Lead-free conductive paste composition for solar cells
CN102751000B (zh) * 2012-06-16 2015-05-06 合肥圣达电子科技实业公司 一种压电陶瓷用无铅无镉电极银浆料及其制备方法
US10158032B2 (en) * 2012-10-12 2018-12-18 Heraeus Deutschland GmbH & Co. KG Solar cells produced from high Ohmic wafers and halogen containing paste
US10069021B2 (en) * 2012-10-12 2018-09-04 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes with salts with an anion consisting of halogen and oxygen in solar cell applications
US20160204303A1 (en) * 2013-08-21 2016-07-14 Gtat Corporation Using an active solder to couple a metallic article to a photovoltaic cell
CN103951263A (zh) * 2014-04-22 2014-07-30 江苏太阳新材料科技有限公司 一种太阳能电池正面银电极用玻璃粉及其制备方法
CN107408418A (zh) 2015-03-27 2017-11-28 贺利氏德国有限责任两合公司 包含氧化物添加剂的导电浆料
US10056508B2 (en) * 2015-03-27 2018-08-21 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising a metal compound
GB201507148D0 (en) * 2015-04-27 2015-06-10 Johnson Matthey Plc Conductive paste, electrode and solar cell
KR101859017B1 (ko) 2015-12-02 2018-05-17 삼성에스디아이 주식회사 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지
JP6947119B2 (ja) * 2018-05-14 2021-10-13 トヨタ自動車株式会社 正極活物質およびフッ化物イオン電池
CN114334214B (zh) * 2021-12-31 2024-08-13 深圳先进电子材料国际创新研究院 一种导电银浆及其制备方法和应用

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
JPS4625848B1 (enExample) 1966-04-15 1971-07-26
JP2001118425A (ja) * 1999-10-21 2001-04-27 Murata Mfg Co Ltd 導電性ペースト
US7556748B2 (en) 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7435361B2 (en) 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
JP4807063B2 (ja) 2005-12-20 2011-11-02 ソニー株式会社 復号装置、制御方法、およびプログラム

Also Published As

Publication number Publication date
EP2203921A1 (en) 2010-07-07
WO2009052460A1 (en) 2009-04-23
JP2011501866A (ja) 2011-01-13
KR20100080613A (ko) 2010-07-09
US8226856B2 (en) 2012-07-24
TW200933653A (en) 2009-08-01
US20090107544A1 (en) 2009-04-30
CN101821816A (zh) 2010-09-01

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