200933182 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種探針卡之故陣偵測方法’其主要 係利用一設置有偵測電路單元之測試晶圓’以供進行探針 卡之故障偵測。 【先前技術】 按，目前所製造量產出的晶圓或浪晶面板，為確保其 品質上的製造良率，均會利用到探針肀（Probe card)對於 ❹晶圓進行檢測，該探針卡的功能係用以作為橋接測試平台 之信號至晶圓上的指定待測元件（DUT ; Device Under Test)，透過探針卡之量測點接觸到受測之晶圓’使量測點 接觸晶圓積體電路中之相對應的輸入黠與輸出點，然後經 由探針卡傳輸測試信號至測試平台，以精確測試出晶圓的 量測點失效位置，藉以測試晶圓的積雜電路是否異常，但 由於量產測試的需求，探針卡上的探#Kneedle)必須在設 〇定之機械壓力（mechanical pressure)下進行數以萬計次的 晶片接觸及測試，在曰積月累下則會造成探針卡累積污穢 及發生故障，必須定期進行清潔、檢修及更換，但探針卡 腳位極 八、Λ— - · ·» ---200933182 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for detecting a probe card array, which mainly utilizes a test wafer provided with a detection circuit unit for performing probes. Card fault detection. [Prior Art] According to the wafers or wave crystal panels produced by the current production, in order to ensure the manufacturing yield of the quality, the probe card is used to detect the silicon wafer. The function of the pin card is used as a signal for bridging the test platform to the specified device under test (DUT; Device Under Test), and the measurement point is touched through the measuring point of the probe card to make the measuring point Contacting the corresponding input and output points in the wafer integrated circuit, and then transmitting the test signal to the test platform via the probe card to accurately test the measurement point failure position of the wafer, thereby testing the accumulated circuit of the wafer Whether it is abnormal, but due to the needs of mass production testing, the probe #Kneedle on the probe card must be tens of thousands of wafer contacts and tests under the set mechanical pressure, in the hoarding month This will cause the probe card to become dirty and malfunction. It must be cleaned, overhauled and replaced regularly, but the probe card is extremely flat. Λ— - · ·» ---
目前的探針卡在使用上至少存在有下列缺點： L探針卡由於必須定期進行清潔或維修， 腳位極 台在檢查維修期間（其檢查時間約需48 影響到後續之生產製造流程。 *邴修，以致測試枣 小時）無法運作，造 成測試工作停擺， 200933182 * 2.探針卡即使經過定期清潔或維修，亦無法完全排除 所有的故障，或明確發現其故障之位置。 3. 目前無適當的檢測方法精確判斷探針卡的高頻測試 功能是否正常，手持式的檢修裝置只能檢測探針卡10M-50M Hz之測試頻率，對於探針卡在高頻（例如1GHz以上）的測試 功能是否正常，目前難以快速有效地檢測。 4. 局頻受測元件（晶圓）之測試過程中’如有失效訊 號，並無法判斷得知是晶圓不良或探針卡不良，如誤判為 ^晶圓不良，將會造成無謂的生產損失。 5. 探針積碳現象如果未能及早發現，施予清潔處理， 可能造成探針燒毀，必須支付更大之維修成本或更換費用。 6. 探針變形或彈性疲乏等情形皆不易發現，容易造成 ；. 測試時接觸不確實之現象，影響測試之準榷性。 ' 7.探針卡本身的故障不易被發現，一旦當探針卡發生 故障時，工程師並無法確認故障探針的確實位置，只能以 q顯微鏡進行目測檢視，以推測可能的故障腳位，或是對所 有探針進行地毯式的清潔維修，然後再進行量產測試以驗 證故障是否排除，若是故障仍未排除，則需再次重覆進行 上述程序，而往往仍然會持續的發生問題。 8.即便是以高價的探針卡檢測系統進行電子信號檢 測，由於檢測系統的金屬板接觸的物理或信號條件（如材 質、壓力、信號頻率等等）和實際待測元件不同，因此檢測 結果也未必可靠，例如在探針清潔程度不夠時會造成傳輸 信號的扭曲或衰減，以至於在靜態測試（static test)或直 200933182 机：試(DC test)時成功通過，但是在交流測試(AC test) 或疋功旎性測試（functional test)時則發生失敗，探針卡 檢測系統未必能偵測出該類故障。 ，9.當上述維修程序都失效時，只剩下回送探針卡供應 商進行排序檢修，通常至少要耗費兩個工作天，對於生產 線域種停機待修會造成巨大的資源浪費。 1〇·對於探針卡之故障，目前缺乏迅速有效的測試 與方法。 〇 為了對於探針卡之品質進行檢測，則有如中華民國發 明第1222519號「探針卡之品質判斷方法」所示，其主要 係2由預先測試且獲得晶圓上的有關各晶粒的晶粒狀況分 佈資料，便可根據各種探針的不同類型在晶圓上定義且挑 選出/、有適田大小的數個取樣測試位置，供等待品質判斷 的探針卡去進行取樣測試，然後將先前獲得的晶粒狀況分 佈資料與取樣測試的結果作比對，根據比對結果而可快速 〇判斷出探針卡上的各探針是否被污染及其探針品質，然， 此種檢測探針卡之方法，於檢測程序上較為繁靖，利用反 ，檢測不同標準的晶圓，然後比對其中之檢測差異，因此 ’匕費相虽多的檢測時間，而且僅能檢測出探針卡是否有故 障，但無法得知其故障點或故障原因，而往往需要將整組 探針卡更換，根本不符成本效益，因此在棒測探針卡之品 質效果有限。 【發明内容】 爰此，有鑑於目前習知探針卡發生故障時難以檢測， 200933182 •故本發明係在提供一種探針卡之故障偵測方法，係在於： A·設L!電路單元’該㈣電路單元係對應探針卡之 每一量測點位置設有可導電之觸點，且探針卡中屬同一迴 路之量測點，其對應之觸點係彼此電性連接；B.使探針卡 之每量測點接觸上述偵測電路單元之相應觸點；c•賦予 一電氣訊號，使電氣訊號經過每一組量測點與觸點所共構 之迴路；D·藉由收集上述迴路之回饋訊號之值，經與—預 ❹設值比較，藉比較結果判斷該組相應之量測點是否故障。 上述該偵測電路單元係設置於一測試晶圓上。 上述該回饋訊號係為一電壓值或一電壓的阻抗值。 上述該預設值係為一電壓的值、一電壓的範圍值、一 電愿阻抗的值或一電壓阻抗的範圍值。 本發明具有下列之優點： 1·本發明係可避免多次往復的清潔探針之流程，只要 一次流程就可以鎖定故障探針加以檢修。 ❹ 2·不需將探針卡轉移到專用的探針卡測試系統上進行 檢測，只需要利用測試平台並配合測試晶圓之偵測電路單 元進行檢測，即可找出故障點，而能有效的減輕工作負擔。 3. 本發明當已檢測出探針卡之清潔度係為正常時/則 可以免除例行性的清潔工作而繼續使用，以減少清潔停機 的時間；若是清潔度不佳肖，則可以預先清潔，以免持續 使用造成燒針或其他更嚴重的故障。 4. 本發明可以在最少的人力及時間消耗下，找出故障 的探針及驗證探針清潔及維修的成果，以有效增加產量及 200933182 節省成本。 5. 本發明係可以精確判斷探針卡的高頻測試功能是否 正常，以避免有高頻信號衰減狀況發生。 6. 本發明更可以早期發現探針之積碳，及時施予清潔 處理，以避免探針燒毀。 7·本發明更具有早期預防之功效，可以杜絕因探針卡 故障而停擺，需要再送回探針卡供應商進行排序檢修，所 造成的時間及金錢上之浪費。 ®【實施方式】 首先’請參閲第一圖及第二圖所示，本發明之實施例， 其主要係包括有下列步驟： A.主要係預先製作一測試晶圓（1)，置放於測試平台（2) 上’而測試平台（2)上則裝置有探針卡（21)，該測試晶圓〇) 係應用原始產品晶圓上待測元件的晶粒面積（die size)、 接觸點（contact pad)配置、腳位配置（pin allocation)及 〇設定接觸壓力等參數而重新設計出，可供作為探針卡（21) 的專用測試晶圓（1)，又該測試晶圓（1)内則設置有一偵測 電路單元’該偵測電路單元係可對應探針卡（21)上的之每 一探針之量測點（22)位置〔如第三圖所示〕，於每一晶粒（n) 之周緣設有可導電之觸點（12)，而探針卡（21)中屬於同一 迴路之量測點（22) ’其所對應之觸點（12)係彼此相互以金 屬線（13)作電性連接，且每一組相連接之觸點係至少 有二個以上，並且不一定位置相鄰，其相距之距離愈遠愈 佳’可以避免受到干擾影響測試結果。 200933182 B.然後使探針卡（21)之每一量測點（22)，可以接觸上 述測試晶圓（1)内偵測電路單元相應之觸點（12)。 C·測試平台（2)賦予一電氣訊號’使電氣訊號經過每一 組量測點（22)與觸點（12)所共構之迴路，即係利用探針卡 (21)之輸入信號原封不動轉出到指定的觸點（丨2)，再藉由 探針卡（21)回送信號至測試平台（2)，經由測試平台（2)進 行電性量測及故障腳位認定，以測試該迴路係為斷路、開 ❹路、電壓值或阻抗值是否偏高，其輸入信號在送入測試晶 圓（1)後經過一段可預測的延遲時間之後會出現在預定的 觸點（12)，當測試平台（2)在比對輸出入信號的差異之後， 即可立即將認定之故障腳位訊息顯示於操控電腦的螢幕， 並紀錄於測試報告；而上述測試係可為電壓輸入（power supply)，只要測試晶圓（1)内部接線在直流時滿足低阻抗 的條件即可，對於信號輸入（in{)ut signal)，測試晶圓（1) 内部接線在探針卡（21)的額定工作頻率内須滿足線性及低 ❹阻抗的條件即可。 D.藉由收集上述迴路之回饋訊號之值，該回饋訊號係 可為電壓值或一電壓的阻抗值，經與一預設值比較，該 預設值係可為一電壓的值、一電壓的範圍值、一電麼阻抗 的值或-電虔阻抗的範圍值，經比對及分析輸出及輸入信 號的f異，藉比較結果判斷該組相應之量測點（22)是否故 障得以辨認出故障的—對探針（含輸人及輸出）。 另本發明上述實施例中所做之測試項目，茲舉例說明如 200933182 · « ι·斷路測試，如第三圖所示，係可於探針卡（21)之迴 路其中一量測點（22)對於測試晶圓（1)相對應之觸點（12) 輸入電氣訊號〔例如5伏特電壓訊號〕，正常時，則會由該 坦路中另一觸點（12)輸出電氣訊號〔應為4. 9伏特電壓訊 號〕至相對應之量測點（22);如果該探針卡（21)之量測點 (22)腳位變形或折斷而發生異常時，如第四圖所示，則會 沒有輸出電氣訊號〔係為〇伏特電壓訊號〕，故可判定該探 ❹針卡（21)之迴路係為斷路故障。 _ 2.知·路測試，如第五圖所示，當探針卡（21)中二個不 同的迴路相鄰時，其中一迴路中之量測點（22)對於測試晶 圓（1)相對應之觸點（12)輸入電氣訊號〔例如5伏特電壓訊 號j，當正常時，另_迴路中之觸點（12A)則應該沒有輸出 電氣訊號〔應為〇伏特電壓訊號〕至相對應之量測點（22A)， 如果該二個不同迴路中之量測點（22)及（22A)因堆積灰塵 等異物而導通時，如第六圖所示，則會經由另一迴路中之 〇觸點（12A)輸出電氣訊號〔應為4· 9伏特電壓訊號〕至相對 應之量測點（22A)，故可判定該探針卡（21)中之二個不同迴 路係為短路故障。 【圖式簡單說明】 第一圖係為本發明測試晶圓之示意圖。 第二圖係為本發明測試設備之示意圖。 第二圖係為本發明探針卡單一迴路之故障測試示章 圖。 第四圖係為本發明探針卡單一迴路發生斷路故障之示 200933182 意圖。 第五圖係為本發明探針卡中二個不同迴路之示意圖。 第六圖係為本發明探針卡中二個不同迴路發生短路之 示意圖。 【主要元件符號說明】 (1) 測試晶圓 (11) 晶粒 (12) 觸點 (12A) 觸點 (13) 金屬線 (2) 測試平台 (21) 探針卡 (22) 量測點 (22A) 量測點 12At present, the probe card has at least the following disadvantages in use: The L probe card must be cleaned or repaired regularly, and the pin platform is inspected and repaired (the inspection time is about 48 affected by the subsequent manufacturing process. * Repairs, so that the test date is not working, causing the test work to stop, 200933182 * 2. Even if the probe card is regularly cleaned or repaired, it cannot completely eliminate all faults or clearly locate the fault. 3. At present, there is no proper detection method to accurately judge whether the high-frequency test function of the probe card is normal. The hand-held inspection device can only detect the test frequency of the probe card 10M-50M Hz, and the probe card is at high frequency (for example, 1GHz). Whether the above test function is normal or not is currently difficult to detect quickly and efficiently. 4. During the test of the local frequency component (wafer), if there is a failure signal, it is impossible to judge whether the wafer is defective or the probe card is defective. If the wafer is misjudged, it will cause unnecessary production. loss. 5. If the probe carbon deposit is not detected early, the cleaning process may cause the probe to burn out, and you must pay a larger repair cost or replacement cost. 6. The deformation of the probe or the fatigue is not easy to find, and it is easy to cause. The phenomenon of inaccurate contact during testing affects the accuracy of the test. ' 7. The fault of the probe card itself is not easy to be found. Once the probe card fails, the engineer cannot confirm the exact position of the faulty probe. Only the q microscope can be used for visual inspection to estimate the possible fault position. Or all the probes are carpeted for cleaning and maintenance, and then mass production test to verify whether the fault is eliminated. If the fault is still not eliminated, the above procedure will be repeated again, and the problem will continue to occur. 8. Even if the electronic signal detection is performed by the high-priced probe card detection system, the detection result is different because the physical or signal conditions (such as material, pressure, signal frequency, etc.) of the metal plate of the detection system are different from the actual components to be tested. It may not be reliable. For example, when the probe is not clean enough, it will cause distortion or attenuation of the transmission signal, so that it can pass successfully in static test or straight test, but in AC test (AC) Test) or failure in the functional test, the probe card detection system may not be able to detect such faults. 9. When the above maintenance procedures are invalid, only the return probe card supplier is sorted and overhauled, usually it takes at least two working days, which will cause huge waste of resources for the production line domain to be repaired. 1〇·For the failure of the probe card, there is currently no rapid and effective test and method. 〇In order to detect the quality of the probe card, it is shown in the Republic of China Invention No. 1222519 "Quality Judging Method for Probe Card", which is mainly based on pre-testing and obtaining crystals on the wafer for each crystal grain. The particle condition distribution data can be defined on the wafer according to different types of probes, and several sampling test positions of the size of the field can be selected for the probe card waiting for the quality judgment to be sampled and tested, and then The previously obtained grain condition distribution data is compared with the results of the sampling test, and according to the comparison result, it is possible to quickly determine whether the probes on the probe card are contaminated and the quality of the probe, however, such detection The method of the needle card is more versatile in the detection procedure, and the wafers of different standards are detected by the reverse, and then the detection difference is compared, so that the detection time of the 匕 phase is relatively large, and only the probe card can be detected. Whether there is a fault, but it is impossible to know the fault point or the cause of the fault, and it is often necessary to replace the entire set of probe cards, which is not cost-effective at all, so the quality effect of the stick probe card is . SUMMARY OF THE INVENTION Accordingly, in view of the fact that the conventional probe card is difficult to detect when it is faulty, the present invention provides a method for detecting a fault of a probe card, which is: A·Set L! circuit unit' The (4) circuit unit is provided with a conductive contact point corresponding to each measuring point position of the probe card, and the probe card belongs to the measuring point of the same circuit, and the corresponding contact points are electrically connected to each other; B. Passing each measuring point of the probe card to the corresponding contact of the detecting circuit unit; c• assigning an electrical signal to make the electrical signal pass through a loop formed by each set of measuring points and contacts; The value of the feedback signal of the above loop is collected, and compared with the pre-set value, the comparison result is used to judge whether the corresponding measuring point of the group is faulty. The detecting circuit unit is disposed on a test wafer. The feedback signal is a voltage value or a voltage impedance value. The preset value is a value of a voltage, a range of a voltage, a value of a wish impedance, or a range of a voltage impedance. The invention has the following advantages: 1. The invention can avoid the process of cleaning the probe for multiple reciprocations, and the fault probe can be locked for maintenance in one process. ❹ 2· It is not necessary to transfer the probe card to the dedicated probe card test system for testing. It only needs to use the test platform and the detection circuit unit of the test wafer to detect, and the fault point can be found, which can be effective. Reduce the workload. 3. The invention can detect that the cleanness of the probe card is normal/the utility model can be saved without the routine cleaning work, so as to reduce the time of cleaning and shutdown; if the cleaning degree is not good, the cleaning can be pre-cleaned. In order to avoid continuous use, causing burnt needles or other more serious faults. 4. The present invention can find faulty probes and verify probe cleaning and repair results with minimal manpower and time consumption, so as to effectively increase production and save costs in 200933182. 5. The invention can accurately determine whether the high frequency test function of the probe card is normal to avoid the occurrence of high frequency signal attenuation. 6. The invention can detect the carbon deposit of the probe at an early stage and timely apply a cleaning treatment to avoid the probe burning. 7. The invention has the effect of early prevention, can prevent the lock from being stopped due to the failure of the probe card, and needs to be sent back to the probe card supplier for sorting and maintenance, which causes time and money waste. ® [Embodiment] First, please refer to the first figure and the second figure. The embodiment of the present invention mainly includes the following steps: A. Mainly preparing a test wafer (1) in advance, placing On the test platform (2), and on the test platform (2), there is a probe card (21), which is a die size of the device to be tested on the original product wafer, Redesigned by parameters such as contact pad configuration, pin allocation, and set contact pressure, which can be used as a dedicated test wafer (1) for the probe card (21), and the test wafer (1) a detection circuit unit is provided. The detection circuit unit can correspond to the position of the measurement point (22) of each probe on the probe card (21) (as shown in the third figure). Conductive contacts (12) are provided on the periphery of each die (n), and the measuring points (22) belonging to the same circuit in the probe card (21) are corresponding to the contacts (12) Electrically connected to each other by a metal wire (13), and each set of connected contacts has at least two or more, and is not necessarily located O, apart from its good afar the 'avoid interference affect the test results. 200933182 B. Then, each measurement point (22) of the probe card (21) can contact the corresponding contact (12) of the detection circuit unit in the test wafer (1). C. The test platform (2) gives an electrical signal 'to make the electrical signal through the circuit of each set of measuring points (22) and the contact (12), that is, the input signal of the probe card (21) is used as it is. Move to the specified contact (丨2), and then send the signal back to the test platform (2) through the probe card (21), and conduct electrical measurement and fault pin identification via the test platform (2). Test whether the loop is open circuit, open circuit, voltage value or impedance value is high, and its input signal will appear at the predetermined contact after a predictable delay time after being sent to the test wafer (1). ), when the test platform (2) compares the difference between the input and output signals, the identified fault pin message can be immediately displayed on the screen of the control computer and recorded in the test report; and the above test system can be a voltage input ( Power supply), as long as the internal wiring of the test wafer (1) meets the low impedance condition at DC, for the signal input (in{) ut signal), the test wafer (1) is internally wired to the probe card (21) Linear and low impedance conditions must be met within the rated operating frequency Can. D. By collecting the value of the feedback signal of the loop, the feedback signal can be a voltage value or a voltage impedance value, and compared with a preset value, the preset value can be a voltage value, a voltage The range value, the value of the impedance or the range of the electric impedance, after comparing and analyzing the output and the difference of the input signal, the comparison result determines whether the corresponding measurement point (22) of the group is faulty. Faulty - on the probe (including input and output). In addition, the test items made in the above embodiments of the present invention are exemplified as 200933182 · « ι·break test, as shown in the third figure, which is a measuring point of the loop of the probe card (21) (22 ) input an electrical signal (for example, a 5 volt signal) to the corresponding contact (12) of the test wafer (1). When normal, the electrical signal will be output from the other contact (12) of the transistor (should be 4. 9 volt voltage signal to the corresponding measuring point (22); if the measuring point (22) of the probe card (21) is deformed or broken and an abnormality occurs, as shown in the fourth figure, There is no output electrical signal (which is a volt-voltage signal), so it can be determined that the loop of the probe card (21) is an open circuit fault. _ 2. Know the road test, as shown in the fifth figure, when two different circuits in the probe card (21) are adjacent, the measuring point (22) in one of the loops is for the test wafer (1) The corresponding contact (12) inputs an electrical signal (for example, a 5 volt voltage signal j. When normal, the contact (12A) in the other _ loop should have no electrical signal output (should be a volt volt signal) to the corresponding The measuring point (22A), if the measuring points (22) and (22A) in the two different circuits are turned on due to accumulation of foreign matter such as dust, as shown in the sixth figure, it will pass through the other circuit. The 〇 contact (12A) outputs an electrical signal [should be a 4.9 volt signal] to the corresponding measuring point (22A), so it can be determined that two different circuits in the probe card (21) are short-circuit faults. . BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic view of a test wafer of the present invention. The second figure is a schematic diagram of the test equipment of the present invention. The second figure is a fault test chart of the single loop of the probe card of the present invention. The fourth figure is the indication of the open circuit failure of the single loop of the probe card of the present invention. 200933182 Intent. The fifth figure is a schematic diagram of two different circuits in the probe card of the present invention. The sixth figure is a schematic diagram of a short circuit in two different circuits in the probe card of the present invention. [Main component symbol description] (1) Test wafer (11) Die (12) Contact (12A) Contact (13) Metal wire (2) Test platform (21) Probe card (22) Measuring point ( 22A) Measurement point 12