TW200931566A - Protection film covering apparatus - Google Patents

Protection film covering apparatus Download PDF

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Publication number
TW200931566A
TW200931566A TW097140327A TW97140327A TW200931566A TW 200931566 A TW200931566 A TW 200931566A TW 097140327 A TW097140327 A TW 097140327A TW 97140327 A TW97140327 A TW 97140327A TW 200931566 A TW200931566 A TW 200931566A
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TW
Taiwan
Prior art keywords
wafer
protective film
light
protection film
processing
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Application number
TW097140327A
Other languages
Chinese (zh)
Inventor
Takehiko Higaki
Original Assignee
Disco Corp
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Publication of TW200931566A publication Critical patent/TW200931566A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

The subject of the present invention is to avoid performing a laser process under the condition of the process surface of a wafer being not covered by a protection film. The solution of the present invention uses liquid resin having the composition capable of absorbing ultraviolet light to form the protection film of the process surface of the wafer. Through using a light irradiation mechanism to irradiate the light within the ultraviolet range and using a detection mechanism to detect whether its reflection light exists or not, the process surface of the wafer without protection film is thereby announced when the reflection light is detected. Therefore, when a part of or the whole process surface of the wafer lacks covering film protection, some or all irradiated ultraviolet light is thereby not absorbed by the protection film and consequently detected. Accordingly, it is able to verify the condition of the process surface that is not covered by a protection film. Furthermore, through announcing the verified result, the way to deal with the result such as checking the covering mechanism or covering the process surface with the protection film again is executed.

Description

200931566 六、發明說明: I:發明所属技術領織3 發明領域 本發明係有關一種於照射有雷射光線之晶圓的加工面 5 被覆保護膜之保護膜被覆裝置。 【:先前技術3 發明背景 〇 依分割預定線而區分IC、LSI等多數元件所形成的晶 圓’係藉由切割裝置、雷射加工裝置而分割為各個元件, 10 並利用於行動電話、電腦等的電子機器。藉由雷射加工裝 置而將晶圓分割為各個元件時,因雷射光線之照射所產生 - 的碎屑會四散而附著於晶圓的加工面,有導致元件之品質 下降的問題。 針對此問題,係提出有一種藉由於晶圓的加工面被覆 ^ 液狀樹脂而形成保護膜’以不讓碎屑附著於晶圓的加工面 〇 之保護膜被覆裝置(譬如參考專利文獻1)。 【專利文獻1】日本專利公開公報特開2007 — 201178號 【發明内容3 發明概要 20 發明欲解決之課題 惟’如專利文獻1所示之保護膜被覆裝置中,液狀樹脂 會固著於用以將液狀樹脂被覆於晶圓的加工面上之液狀樹 脂噴射嘴的噴射口,而妨礙到液狀樹脂之喷射。其結果, 保護膜之被覆變得不完全,會在保護膜未被覆於整個晶圓 3 200931566 的加工面之狀態而進行雷射加工,作為碎屑對策並不夠理 想0 本發明係有鑑於上述情事而創作完成者,目的在於提 供一種保護膜被覆裝置,其係<避免在保護膜未被覆於晶 5圓的加工面之狀態下進行雷射加工者。 用以欲解決課題之手段 為解決前述課題並達成目的’本發明之保護膜被覆裝 置係於對晶圓的加工面照射雷射光線而施行雷射加工前, 將保護膜被覆於晶圓的加工面,真包含有:保持台,係保 10持晶圓者;被覆機構,係將含有玎吸收預定波長之光的成 分之液狀樹脂作為前述保護膜,被覆於保持在該保持台之 晶圓的加工面;光照射機構,係將預定的波長區域之光照 射於晶圓的加工面;檢測機構,係檢測有無預定波長之反 射光’而該預定波長之反射光係源自以該光照射機構照明 15的晶圓之加工面者;及通知機構,係於藉由該檢測機構而 檢測出前述反射光時’通知未被覆前述保護膜之主旨。 又’本發明之保護膜被覆裝置係於前述發明中,前述 預定的波長區域係紫外線光之波長區域或紅外線光之波長 區域。 2〇 發明效果 由於本發明之保護膜被覆裝置,係對於以含有可吸收 預定波長之錢成分之液狀樹脂⑽成保_之晶圓的加 工面,照射預域長區域之光並檢測有無其反㈣,而檢 測出反射光時通知保護膜未加以被覆之主旨故若晶圓的 200931566 加工面上存有未被覆保護膜之區域或部分時,保護膜係不 會被預定波長區域之反射光吸收而加以檢測出,藉此可確 認保護膜未被覆於加工面之狀態,並可藉由通知該結果而 採取被覆機構之檢查、重新被覆保護膜等之對策,可發揮 5 ❹ 10 15 ❹ 20 避免於晶圓的加工面未被覆保護膜之狀態下進行雷射加工 之功效。 L實施方式j 用以實施發明之最佳形態 以下,參照圖式說明用以實施本發明之較佳態樣的保 護膜被覆裝置。 ^ 第1圖係顯示—體地組裝有本實施形態之保護膜被覆 裝置的雷射加卫裝置之外觀立顧。本實施形態之雷射加 工裝置1係包含有略長方體狀之裝置殼體2。裝置殼體2包含 有夾具σ3,該夾具台3係可自由移動地配設於加工搬送方 =之Χ抽方向’且保持晶圓者。夾具台3係藉由未圖式之 疋轉機構而構成為可加以旋動。X,雷射加工裝置1包含 射光線照射機構4,係將脈衝雷射光線加以聚光並照 射至保持於夹且▲ _ ,、03上之晶圓10 ;攝像機構5,係以CCD等 攝像π件來拍攝_於夾具台3上之晶 圓10的表面,拍攝 且檢測藉由自雷私t ^ 二*、 射先線照射機構4所射出之脈衝雷射光線 而應進行加工. 域,及顯示機構6,係顯示藉由攝像機構 所:影像、其他的各種資訊等。 而雷射加工裝置丨係包含載置有可收容晶圓ι〇之匣 體13的匣體載置邮u ^ i#i3a。匣體台13b係藉由未圖示之升降機 5 200931566 構而可上下移動地配設於匣體載置部133,於該匣體台13b 上載置有匣體13。晶圓10係貼附於安裝在環狀框體u之黏 著帶12的表面,且於經由黏著帶12而支撐在環狀框體11之 狀態收容於匣體13。雖未特別圖式,晶圓1〇係藉由多數格 5子狀地形成於表面之界道而區分為多數區域,且於該加以 區分之區域形成有1C、LSI等的元件。如此構成的晶圓10如 第1圖所示,係以表面為上側而背面貼附於安裝在環狀框體 11之黏著帶12上。 又’雷射加工裝置1包含有:晶圓搬出搬入機構14,係 10 搬出收納於匣體13之加工前的晶圓1〇,並將加工後的晶圓 10搬入匣體13 ;暫置台15,係暫時放置以晶圓搬出搬入機 構14加以搬出之加工前的晶圓1〇 ;保護膜被覆裝置7,係配 設於將搬出至暫置台15之加工前的晶圓1〇搬送至夾具台3 之第1搬送路徑,並將保護膜被覆於加工前的晶圓10之加工 15 面;及洗淨機構8,係配設於將保持在夾具台3之加工後的 晶圓10搬送至暫置台15的第2搬送路徑,並洗淨除去被覆於 加工後之晶圓10的加工面上之保護膜。此處,第1搬送路徑 與第2搬送路徑係以各自不同的搬送路徑加以設定。 又,雷射加工裝置1包含有:第1搬送機構16,係將搬 20 出至暫置台15之加工前的晶圓10搬送至保護膜被覆裝置 7,並將以洗淨機構8而加以洗淨之加工後的晶圓10搬送至 暫置台15 ;及第2搬送機構17,係將藉由保護膜被覆裝置7 而被覆有保護膜之加工前的晶圓10搬送至夾具台3,並將保 持於夾具台3之加工後的晶圓10搬送至洗淨機構8。 200931566 此處,第1搬送機構16係配置在相對於暫置台i5、保護 膜被覆裝置7及洗淨機構8為等距離之位置。該第版送機構 16可與-般所使用的搬送機構為相同構成,由具有可㈣ 保持環狀框體11兩端之搬送塊的保持機構16a,以及可讓保 5持機構16a於上下方向升降且可旋轉地加以支持之支撐機 構16b所組成。如此構成之第丨搬送機構“,係可將搬出至 暫置台15之加工前的晶圓10(貼附於安裝在環狀框體丨丨之 Ο ㈣帶12的表面上之狀態)搬送至保護膜被覆裝置7,並將 藉由洗淨機構8而加以洗淨之加工後的晶_(貼附於安裝 10在環狀框體11之黏著帶㈣表面上之狀態)_至暫置台 15 〇 ' X,第2搬送機構17係配置於可在夾具台3、保護膜被 t裝置7及洗淨機構8之間搬送晶圓1()之位置,且由具有可 吸附保持環狀框體11兩端之搬送塊的保持機構17&,以及可 15讓保持機構17a於上下方向升降且可旋轉地加以支持之支 © 撐機構171)所組成。如此構成之第2搬送機構17,係可將藉 由保護膜被覆裝置7而被覆有保護膜之加工前的晶圓1〇(貼 附於女裝在環狀框體11之黏著帶12的表面上之狀態)搬送 至夾具台3 ’並藉由支揮機構17b的旋轉動作而將保持於夾 2〇具台3之加工後的晶圓10(貼附於安裝在環狀框體11之黏著 帶12的表面上之狀態)搬送至洗淨機構8。洗淨機構8包含有 吸附保持加工後的晶圓1〇並使其旋轉之旋轉台、洗淨用的 洗淨水噴嘴、乾燥用的空氣喷嘴等。 其次’參照第2圖至第5圖說明本實施形態之保護膜被 7 200931566 覆裝置7。第2圖係保護膜被覆裳置之 顯示保持台定位於搬體圖,第3圖係 縱剖正面圖’第4圖係顯示保持 置的概略 被覆裝置之概略縱剖正面圖,第5圖係顯乍=之保護膜 5之構成例的概略圖。 ’ 〃保3蔓膜檢查機構 保護膜被覆裝置7包含 A地拢71品I 待D機構71,及包圍該保捭 口機構71而加以配設之保 “寺 包含有伴持Μ” τ 〇收谷機構72。保持台積購71 W有保持Q7U、可旋轉驅動該保持台71 712、及可讓該電動馬達 电動馬達 10 15 _ 於上下方向移動地加以支持之 支撐機構713。保持台叉得之 ㈣般7n „ U包3有由纽性㈣卿成之吸 附夾盤料M7Ua_未㈣之謂機構連 通’且藉由吸附機構之負壓而吸附保持載置於吸附夾盤 711a上之晶® H)。又,於保持台711係配設有用以固定環狀 框體η之夾件714。電動馬達712係於其驅動軸7i2a之上端 與保持台711連結。支揮機構713係由多數根,譬如三根之 支撐腳713a,以及分別連結該等支撐腳7Ua並安裝於電動 馬達712之多數根,譬如三根的氣筒71孙所組成,藉由讓氣 713b作動,可讓電動馬達712及保持台711定位於第3圖所 不之上方位置的搬入搬出位置,以及第4圖所示之下方位置 的作業位置。 又’保持台收谷機構72包含有收容容器721 '支持該收 容容器712之三根支撐腳722、及安裝於電動馬達712之驅動 轴712a的覆蓋構件723。收容容器721係如第3圖及第4圖所 示,由圓筒狀的外側壁721a、底壁721b及内側壁721c組成。 20 200931566 5 Ο 10 15 ❹ 20 於底壁721b之中央部設有電動馬達712之驅動軸712&可插 通之穴721d,且形成有由該穴721d之周緣向上方突出之内 側壁721c。覆蓋構件723係形成為圓筒狀,且包含有由其外 周緣向下方突出之覆蓋部723a。如此形成之覆蓋構件723, 當電動馬達712及保持台711定位於第4圖所示之作業位置 時,覆蓋部723a係定位成與構成收容容器721之内側壁72卜 的外側具有間隙。 又,保護膜被覆裝置7包含有被覆機構74,該被覆機構 74係用以對保持在保持台711之加工前的晶圓1〇之加工 面,供給液狀樹脂而形成保護膜者。被覆機構74包含有: 樹脂液供給喷嘴741,係對於保持在保持台711之加工前的 晶圓10之加工面供給液狀樹脂;及可正轉逆轉之電動馬達 742,係可讓該樹脂液供給喷嘴741搖動者,且樹脂液供給 喷嘴741係連接於未圖示之樹脂液供給源。樹脂液供給嘴嘴 741係由水平延伸且前端部向下方彎曲的噴嘴部741&,及由 該喷嘴部741a之基端向下方延伸之支撐部741b所組成,支 撐部741b係插通設置於構成收容容器721之底壁72沁且未 圖示之插通穴而加以配設,並連接於未圖示之液狀樹脂供 給源。又,於樹脂液供給喷嘴741之支撐部74比插通之未圖 示的插通穴之周緣’安裝有密封其與支撐部74115之間的未 圖示之密封構件。 此處’用以於晶圓10之加工面形成保護膜之液狀樹 脂,譬如宜為 PVA(Poly Vinyl Alcohol)、PEG(p〇lyEthylene200931566 VI. Description of the Invention: I: Technical Field of the Invention 3 Field of the Invention The present invention relates to a protective film coating device for coating a protective film on a processed surface 5 of a wafer irradiated with laser light. [Prior Art 3] The wafer formed by distinguishing a plurality of components such as ICs and LSIs according to a predetermined dividing line is divided into individual components by a cutting device or a laser processing device, and is used for a mobile phone or a computer. Electronic machines, etc. When the wafer is divided into individual elements by the laser processing apparatus, the debris generated by the irradiation of the laser light is scattered and adhered to the processed surface of the wafer, which causes a problem that the quality of the element is lowered. In response to this problem, there has been proposed a protective film coating device in which a protective film is formed by coating a liquid resin on a processed surface of a wafer so as not to allow debris to adhere to the processed surface of the wafer (for example, refer to Patent Document 1). . [Patent Document 1] Japanese Laid-Open Patent Publication No. 2007-201178 [Invention Summary] SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION In the protective film coating device disclosed in Patent Document 1, the liquid resin is fixed. The liquid resin is applied to the ejection opening of the liquid resin ejection nozzle on the processing surface of the wafer to prevent the ejection of the liquid resin. As a result, the coating of the protective film is incomplete, and laser processing is performed in a state where the protective film is not applied to the processed surface of the entire wafer 3 200931566, and it is not preferable as a countermeasure against debris. The present invention is based on the above-mentioned circumstances. The author of the creation is to provide a protective film coating device which is capable of performing laser processing in a state where the protective film is not covered on the processed surface of the crystal 5 circle. The means for solving the problem is to solve the above problems and achieve the object. The protective film coating device of the present invention is a process in which a protective film is coated on a wafer before laser processing is performed on the processed surface of the wafer by performing laser processing. The surface includes: a holding station that protects the wafer holder; and a coating mechanism that coats the wafer held in the holding stage with a liquid resin containing a component that absorbs light of a predetermined wavelength as a protective film. The processing surface is a light irradiation mechanism that irradiates light of a predetermined wavelength region to a processed surface of the wafer; and the detecting mechanism detects whether or not there is reflected light of a predetermined wavelength, and the reflected light of the predetermined wavelength is derived from the light. The processing surface of the wafer of the mechanism illumination 15 and the notification means are notified of the fact that the protective film is not covered when the reflected light is detected by the detecting means. Further, in the protective film coating apparatus of the present invention, the predetermined wavelength region is a wavelength region of ultraviolet light or a wavelength region of infrared light. Advantageous Effects of Invention The protective film coating device of the present invention irradiates a processed surface of a wafer containing a liquid resin (10) capable of absorbing a predetermined wavelength, and irradiates light of a pre-domain length region to detect presence or absence thereof. (4), when the reflected light is detected, the protective film is not covered. If the area or portion of the film on the 200931566 processed surface is not covered with the protective film, the protective film is not reflected by the predetermined wavelength region. By absorbing and detecting, it is possible to confirm that the protective film is not covered on the processed surface, and it is possible to take measures such as inspection of the covering mechanism and re-coating of the protective film by notifying the result, and it is possible to exhibit 5 ❹ 10 15 ❹ 20 Avoid the effect of laser processing in the state where the processed surface of the wafer is not covered with a protective film. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a protective film coating apparatus for carrying out a preferred embodiment of the present invention will be described with reference to the drawings. ^ Fig. 1 shows the appearance of a laser-assisted device in which the protective film coating device of the present embodiment is integrally assembled. The laser processing apparatus 1 of the present embodiment includes a device casing 2 having a substantially rectangular parallelepiped shape. The apparatus casing 2 includes a jig σ3, and the jig table 3 is movably disposed in the processing direction of the processing conveyer = and the wafer holder is held. The jig table 3 is configured to be rotatable by a twist mechanism of the drawing type. X. The laser processing apparatus 1 includes a light beam irradiation mechanism 4 for collecting the pulsed laser light and irradiating it to the wafer 10 held on the clip and ▲ _ , 03; the image pickup mechanism 5 is CCD or the like π pieces are taken to the surface of the wafer 10 on the jig table 3, and the pulsed laser light emitted by the Rayon t^2* and the first line illumination mechanism 4 is photographed and detected. And the display unit 6 displays images, other various information, and the like by the imaging means. Further, the laser processing apparatus includes a cartridge mounting post u ^ i #i3a on which the cartridge 13 for accommodating the wafer is placed. The body 13b is disposed on the body mounting portion 133 so as to be movable up and down by an elevator 5 200931566 (not shown), and the body 13 is placed on the body table 13b. The wafer 10 is attached to the surface of the adhesive tape 12 attached to the annular frame u, and is housed in the body 13 in a state of being supported by the annular frame 11 via the adhesive tape 12. The wafer 1 is divided into a plurality of regions by a boundary formed on the surface by a plurality of sub-like shapes, and elements such as 1C and LSI are formed in the divided regions. As shown in Fig. 1, the wafer 10 thus constituted is attached to the adhesive tape 12 attached to the annular frame 11 with the front surface as the upper side and the back surface. Further, the laser processing apparatus 1 includes a wafer loading/unloading mechanism 14 that carries out the wafer 1 before processing which is stored in the body 13, and carries the processed wafer 10 into the body 13; the temporary stage 15 The wafer 1 before processing which is carried out by the wafer loading/unloading mechanism 14 is temporarily placed, and the protective film coating device 7 is disposed on the wafer 1 before processing which is carried out to the temporary stage 15 and transported to the jig table. The first transfer path of 3 is applied to the processing 15 of the wafer 10 before processing; and the cleaning mechanism 8 is disposed to transport the wafer 10 after being processed by the jig table 3 to the temporary transfer path The second transport path of the stage 15 is placed, and the protective film coated on the processed surface of the processed wafer 10 is removed. Here, the first transport path and the second transport path are set by different transport paths. Further, the laser processing apparatus 1 includes a first transport mechanism 16 that transports the wafer 10 before processing to the temporary stage 15 to the protective film coating device 7, and washes it by the cleaning mechanism 8. The wafer 10 after the processing is transferred to the temporary stage 15; and the second transfer mechanism 17 transports the wafer 10 before the processing with the protective film by the protective film coating device 7 to the jig table 3, and The wafer 10 that has been processed by the jig table 3 is transferred to the cleaning mechanism 8. 200931566 Here, the first conveying mechanism 16 is disposed at a position equidistant from the temporary table i5, the protective film covering device 7, and the cleaning mechanism 8. The first plate feeding mechanism 16 can be configured in the same manner as the conveying mechanism used in general, and has a holding mechanism 16a that can (4) hold the conveying block at both ends of the ring-shaped frame 11, and can hold the holding mechanism 16a in the up and down direction. A support mechanism 16b that is lifted and rotatably supported. The ninth transport mechanism configured as described above can transport the wafer 10 before being processed to the temporary stage 15 (attached to the surface of the rim (4) tape 12 attached to the annular frame 至) to be protected. The film coating device 7 and the processed crystal _ (attached to the surface of the mounting tape 10 on the surface of the adhesive tape (four) of the annular frame 11) by the cleaning mechanism 8 _ to the temporary stage 15 〇 'X, the second transport mechanism 17 is disposed at a position where the wafer 1 can be transported between the jig table 3 and the protective film by the t device 7 and the cleaning mechanism 8, and has an annular frame 11 that can be adsorbed and held. The holding mechanism 17& of the conveying block at both ends and the branching mechanism 171) which can lift and support the holding mechanism 17a in the vertical direction and rotatably support the second conveying mechanism 17 configured as described above The wafer 1 before the processing of the protective film by the protective film coating device 7 (attached to the surface of the wearer's surface of the adhesive tape 12 of the annular frame 11) is transported to the jig table 3' and borrowed The wafer 10 that has been processed by the holder 2 of the clip 2 is rotated by the rotation of the support mechanism 17b (attached to the security) The state is transported to the cleaning mechanism 8 in the state of the surface of the adhesive tape 12 of the annular frame 11. The cleaning mechanism 8 includes a rotary table for sucking and holding the wafer 1 after being processed, and for cleaning. The washing water nozzle, the air nozzle for drying, etc. Next, the protective film of the present embodiment will be described with reference to Figs. 2 to 5, and the cover film 7 will be described. Fig. 2 is a display and holding table for the protective film coating. FIG. 4 is a schematic longitudinal cross-sectional front view showing a holding device, and FIG. 5 is a schematic view showing a configuration example of the protective film 5 in the fifth embodiment. ' 〃 保 3 蔓 检查 检查 保护 保护 保护 保护 保护 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓 蔓The valley mechanism 72. The holding unit 71 71 has a support mechanism 713 for holding the Q7U, rotatably driving the holding table 71 712, and supporting the electric motor electric motor 10 15 _ in the vertical direction. (4) 7n „ U package 3 has a new (4) Qingcheng adsorption chuck material M7Ua_(4) means that the mechanism is connected to and maintains the crystal® H) placed on the adsorption chuck 711a by the negative pressure of the adsorption mechanism. Further, a clip 714 for fixing the annular frame η is disposed on the holding base 711. The electric motor 712 is coupled to the holding stage 711 at the upper end of the drive shaft 7i2a. The support mechanism 713 is composed of a plurality of roots, for example, three support legs 713a, and a plurality of bases, such as three air cylinders 71, which are respectively connected to the support legs 7Ua and are attached to the electric motor 712, and the air 713b is actuated. The electric motor 712 and the holding table 711 can be positioned at the loading/unloading position at the upper position not shown in Fig. 3 and the working position at the lower position shown in Fig. 4 . Further, the holding stage receiving mechanism 72 includes a storage container 721', three supporting legs 722 for supporting the receiving container 712, and a covering member 723 attached to the driving shaft 712a of the electric motor 712. The storage container 721 is composed of a cylindrical outer side wall 721a, a bottom wall 721b, and an inner side wall 721c as shown in Figs. 3 and 4 . 20 200931566 5 Ο 10 15 ❹ 20 The drive shaft 712 & the insertable hole 721d of the electric motor 712 is provided at the center of the bottom wall 721b, and the inner side wall 721c which protrudes upward from the periphery of the hole 721d is formed. The covering member 723 is formed in a cylindrical shape and includes a covering portion 723a that protrudes downward from the outer periphery thereof. In the covering member 723 thus formed, when the electric motor 712 and the holding table 711 are positioned at the working position shown in Fig. 4, the covering portion 723a is positioned to have a gap with the outer side of the inner side wall 72 constituting the housing container 721. Further, the protective film covering device 7 includes a covering mechanism 74 for supplying a liquid resin to the processing surface of the wafer 1 before the processing of the holding table 711 to form a protective film. The coating mechanism 74 includes a resin liquid supply nozzle 741 that supplies a liquid resin to a processing surface of the wafer 10 held before processing of the holding stage 711, and an electric motor 742 that can be reversely rotated to allow the resin liquid to be supplied The supply nozzle 741 is shaken, and the resin liquid supply nozzle 741 is connected to a resin liquid supply source (not shown). The resin liquid supply nozzle 741 is composed of a nozzle portion 741 & which extends horizontally and has a front end portion bent downward, and a support portion 741b extending downward from a base end of the nozzle portion 741 a. The support portion 741 b is inserted and disposed in the configuration. The bottom wall 72 of the storage container 721 is disposed so as not to be inserted into the hole, and is connected to a liquid resin supply source (not shown). Further, a sealing member (not shown) sealed between the support portion 74 of the resin liquid supply nozzle 741 and the periphery of the insertion hole (not shown) is attached to the support portion 7415. Here, the liquid resin used to form a protective film on the processed surface of the wafer 10, for example, PVA (Poly Vinyl Alcohol), PEG (p〇lyEthylene)

Glycol)、PEO(P〇ly Ethylene Oxide)等的水溶性抗蝕劑。特 9 200931566 別是本實施形態中,雷射光線照射機構4所使用的雷射光線 係300nm〜400nm之紫外線光區域的波長光,為提高此種雷 射光線之加工性,係可使用含有以預定波長之光而吸收紫 外線光之成分的液狀樹脂來作為液狀樹脂。 5 又’本實施形態之保護膜被覆裝置7係包含有保護膜檢 查機構75。該保護膜檢查機構75係如第5圖所示,由光照射 機構76、檢測機構77及通知機構78組成。光照射機構%係 用以對於保持在夾盤台711之晶圓10的加工面,照射預定波 長區域之紫外線光區域300nm〜400nm.的光者,且嬖如由發 10 光波長355nm之紫外線光LED761、用以讓來自該紫外線光 LED761之照明光自上方垂直落下射照明之半鏡762、及讓 落射照明光之光軸周圍進行斜光照明之紫外線光環型光 763所組成。 檢測機構77係用以檢測有無來自以光照射機構76加以 15照明之晶圓1〇的加工面之預定波長,譬如紫外線光區域之 反射光者’且由照相機772,及依照相機772所拍攝之影像 資料而檢測有無紫外線光區域之反射光的控制部773所組 成,前述照相機772係使用經半鏡762、濾鏡771而依次拍攝 以光照明機構76加以照明之晶圓1〇之加工面的紫外線CCD 20等者。控制部773包含有:記憶體774,係暫時記憶照相機 772於保護膜形成前所拍攝到的影像資料;演算部775,係 對於照相機772在保護膜形成後所拍攝之影像資料,與保護 膜形成前所拍攝並記憶於記憶體774之影像資料進行演算 處理;及判斷部776 ’係對於演算部775之演算結果,使用 10 200931566 預定的閾值來判斷是否檢測出紫外線光區域之反射光。 又’控制部77 3係控制拍攝晶圓1 〇之加工面時的光照射機構 76之動作。 此處,光照射機構76及照相機772係作為保護膜檢查機 5 構751而單元化,且藉由未圖示之移動機構而可於夾盤台 711之上空自由進退地加以設置。A water-soluble resist such as Glycol) or PEO (P〇ly Ethylene Oxide). In particular, in the present embodiment, the laser light used in the laser beam irradiation mechanism 4 is a wavelength light of an ultraviolet light region of 300 nm to 400 nm, and is used to improve the processability of the laser light. A liquid resin that absorbs light of a predetermined wavelength and absorbs components of ultraviolet light is used as a liquid resin. Further, the protective film covering device 7 of the present embodiment includes a protective film inspection mechanism 75. The protective film inspection mechanism 75 is composed of a light irradiation mechanism 76, a detection mechanism 77, and a notification mechanism 78 as shown in Fig. 5. The light irradiation means % is used to illuminate the ultraviolet light region of the predetermined wavelength region from 300 nm to 400 nm for the processing surface of the wafer 10 held on the chuck table 711, and for example, ultraviolet light having a wavelength of 355 nm. The LED 761 is composed of a half mirror 762 for illuminating the illumination light from the ultraviolet light LED 761 vertically from above, and ultraviolet light ring type light 763 for obliquely illuminating the optical axis of the epi-illumination light. The detecting mechanism 77 is configured to detect the presence or absence of a predetermined wavelength from the processing surface of the wafer 1 that is illuminated by the light irradiation mechanism 76, such as the reflected light of the ultraviolet light region, and is photographed by the camera 772 and by the camera 772. The image data is composed of a control unit 773 that detects the presence or absence of reflected light in the ultraviolet light region, and the camera 772 sequentially captures the processed surface of the wafer 1 illuminated by the light illumination unit 76 via the half mirror 762 and the filter 771. UV CCD 20 and so on. The control unit 773 includes a memory 774 for temporarily storing the image data captured by the camera 772 before the formation of the protective film, and a calculation unit 775 for forming the image data of the camera 772 after the protective film is formed, and the protective film. The image data captured and memorized in the memory 774 is subjected to calculation processing; and the determination unit 776' determines whether or not the reflected light of the ultraviolet light region is detected using the threshold value of 10 200931566 for the calculation result of the calculation unit 775. Further, the control unit 77 3 controls the operation of the light irradiation unit 76 when the processing surface of the wafer 1 is imaged. Here, the light irradiation means 76 and the camera 772 are unitized as the protective film inspection machine 5, and are provided to be movable forward and backward on the chuck table 711 by a moving mechanism (not shown).

Φ 又’通知機構78係用以於藉由檢測機構77之判斷部776 而檢測出反射光時,通知晶圓1〇之加工面未被覆有保護膜 之主旨者,本實施形態之情況,係可利用顯示機構6來顯示 10未被覆有保護膜之主旨。 15 20 其次,說明雷射加工裝置i之動作。首先,經保護帶12 而支撐於環狀框體U之加X前的晶_,係將加工面作為 上侧且收容難體13之敎位置,並藉由未㈣之升降機 :來讓E體台13b上下移動而定位在搬出位置。其次晶圓 ==14進退作動而將定位在搬出位置之晶圓賺 -對位。業已經進行中心、對位的晶 ::0係藉由第1搬送機構16之保持機構―以吸附保 持並藉由將支擇機構16b作為中 ’、 護膜被覆裝置7之保持台711上且力σ、、疋動動作而搬送至保 框體11係藉由夾件714加以固定。附保持。又’環狀 :圖所示之搬人搬出位置’樹脂供给 及第3圖所示,定位在距保持台川 序、第2圖 置。 之上方—距離的待機位 如第3圖所示,在 在如上述之保護膜形成前的狀態中 11 200931566 控制部773進行控制之下,讓㈣膜檢查機構751由待機位 置而在保持台7U上進出。且以低速讓保護膜檢查機構π 移動而拍攝且掃猫譬如晶圓1〇的整個加工面,並一邊藉由 光照射機構76以紫外線光區域的波長光照射晶圓1〇的加工 5面,一邊以照相機772跨整個區域而依次拍攝晶圓10之加工 面。此時,晶圓10之加工面因未形成有保護膜,以照相機 772依次拍攝的影像係成為反射光影像,基本上係成為明 亮的影像。以照相機772依次拍攝的影像資料係暫時儲存於 記憶體774。 10 進行如上述之攝像後,讓保護膜檢查機構751退回至保 持台711之上方,並讓保持台711定位在第4圖所示之作業位 置,且讓電動馬達742作動,以支撐部741b為中心而搖動樹 脂液供給噴嘴741,使喷嘴部741a之前端定位在保持於保持 台711上之晶圓1〇之加工面的中央區域之上方。其次,讓電 15動馬達712作動,以300rpm〜lOOOrpm之旋轉速度讓保持台 711旋轉。於此狀態’由喷嘴部74ia將預定量的液狀樹脂以 30秒間程度滴下至晶圓1 〇的加工面之中央區域。其結果, 滴下至晶圓10之加工面上的液狀樹脂,因離心力而流動至 外周部,被覆晶圓10之加工面。此液狀樹脂係隨著時間經 2〇 過而硬化,作為保護膜l〇a而形成於晶圓10的加工面上。 又’ l〇b係晶圓10之加工面侧之圖案面。該保護膜1〇&之厚 度係依所滴下之液狀樹脂之量而加以決定,可為l/zm〜1() M m程度。 以被覆機構74進行的保護膜被覆程序結束時,保持台 12 200931566 711再次定位於第3圖所示之搬入搬出位置,且在藉由控制 部773進行控制下,讓保護膜檢查機構751由待機位置在保 持台711上進出,執行保護膜檢查程序。即,以低速移動保 護膜檢查機構751而拍攝且掃瞄譬如晶圓1〇的整個加工 5 面,並一邊藉由光照射機構76以紫外線光區域的波長光照 明晶圓10的整個加工面’ 一邊讓照相機772跨整個區域而一Φ Further, the notification mechanism 78 is configured to notify the processing surface of the wafer 1 that the processed surface is not covered with the protective film when the reflected light is detected by the determining unit 776 of the detecting unit 77. The display mechanism 6 can be used to display the tenth that the protective film is not covered. 15 20 Next, the operation of the laser processing apparatus i will be described. First, the crystal _ before the X is added to the annular frame U via the protective tape 12, the processing surface is taken as the upper side and the position of the difficult body 13 is accommodated, and the E body is replaced by the lift of the (4) The table 13b moves up and down and is positioned at the carry-out position. Next, the wafer ==14 advances and retreats and will position the wafer in the unloading position to earn - alignment. The center-aligned crystal: 0 is held by the holding mechanism of the first conveying mechanism 16 and held by the holding mechanism 16b as the middle ', the holding plate 711 of the film covering device 7 and The force σ and the swaying motion are transferred to the frame 11 and fixed by the clip 714. Attached to keep. Further, the ring shape is shown in the figure: the resin supply and the resin supply shown in Fig. 3 are positioned at the distance from the holding stage and the second picture. The standby position of the distance-distance is as shown in Fig. 3, and under the control of the control unit 773 under the control of the protective film as described above, the (4) film inspection mechanism 751 is held by the standby position at the holding stage 7U. Go in and out. And the protective film inspection mechanism π is moved at a low speed to capture and sweep the entire processing surface of the wafer, such as the wafer, and the light irradiation mechanism 76 irradiates the processing surface 5 of the wafer 1 with the wavelength light of the ultraviolet light region. The processed surface of the wafer 10 is sequentially photographed while the camera 772 is spanning the entire area. At this time, since the processed surface of the wafer 10 is not formed with a protective film, the image sequentially photographed by the camera 772 becomes a reflected light image, and basically becomes a bright image. The image data sequentially taken by the camera 772 is temporarily stored in the memory 774. 10 After performing the imaging as described above, the protective film inspection mechanism 751 is retracted above the holding table 711, and the holding table 711 is positioned at the working position shown in FIG. 4, and the electric motor 742 is actuated to support the portion 741b. The resin liquid supply nozzle 741 is shaken at the center, and the front end of the nozzle portion 741a is positioned above the central region of the processing surface of the wafer 1 held on the holding table 711. Next, the electric motor 712 is actuated to rotate the holding stage 711 at a rotation speed of 300 rpm to 1000 rpm. In this state, a predetermined amount of the liquid resin is dropped by the nozzle portion 74ia to the central region of the processed surface of the wafer 1 in about 30 seconds. As a result, the liquid resin dropped onto the processing surface of the wafer 10 flows to the outer peripheral portion by the centrifugal force, and covers the processed surface of the wafer 10. This liquid resin is cured over time and is formed on the processed surface of the wafer 10 as a protective film 10a. Further, l〇b is a pattern surface on the processing surface side of the wafer 10. The thickness of the protective film 1 〇 & is determined depending on the amount of the liquid resin dropped, and may be about 1/zm to 1 (m). When the protective film covering process by the covering mechanism 74 is completed, the holding table 12 200931566 711 is again positioned at the loading/unloading position shown in FIG. 3, and under the control of the control unit 773, the protective film inspection mechanism 751 is placed on standby. The position is moved in and out on the holding table 711, and a protective film inspection program is executed. That is, the protective film inspection mechanism 751 is moved at a low speed to capture and scan the entire processing surface of the wafer 1 ,, and the entire processing surface of the wafer 10 is illuminated by the light irradiation mechanism 76 with the wavelength light of the ultraviolet light region. While letting the camera 772 span the entire area

次拍攝晶圓10的加工面。此時,於攝像區域中若形成有保 護膜10a,紫外線光區域的照射光係以保護膜i〇a加以吸收 而未反射,故成為暗的圖像,相較於此,於攝像區域中若 10未形成有保護膜l〇a,紫外線光區域之照射光係未被吸收而 於晶圓10的加工面反射(有反射光),成為與膜形成前相同的 明亮之影像。又,保護膜被覆前與被覆後之晶圓1〇的影像, 係以環狀框體11之基準位置專為起點而進行拍攝來處理。 15 20 以照相機772依次拍攝的影像資料,係與儲存於記情體 774之影像資料-同取人至演算部775,取得兩影像^之 差分。此處,如上述’相肢形成有保護獅a之攝像區域 的影像資料係較暗的影像’未形成有保護膜咖之攝像區域 的影像資料係基於反射光而成為較亮的影像因此 ' 與保護膜被覆前的加工面之較亮的影像之差分時—取侍 形成保護膜⑽之部分,係會出現差分較小的刀部分,H 斷部776對於藉由演算部775而進行差分·.寅算所 , ' 果,係應㈣設的就閾值,若差分_值大,判ζ = 整個晶圓10的加卫面而正常地形成有保護義a在: 差分為閾值以下之部分時,判斷為於加工面上疒 在有 13 200931566 覆保護骐l〇a之部分。 以判斷部776判斷為保護膜1〇a未完全地被覆時,控制 #773係將該主旨通知給通知機構%並通報操作者 。作為此 情況之辦策,譬如亦可藉由保護膜被覆裝置7再次對該晶圓 5 1〇執行保護膜被覆程序而重新形成保護膜10a,之後再次檢 查保護膜l〇a是否正常形成。此時,即便重新形成保護膜1〇a 而保濩膜10a之形成仍不完全時,亦可進行液狀樹脂是否固 著於保護膜被覆裝置7之樹脂液供給喷嘴741等的檢查、修 補作業。該檢查、修補作業係可依來自判斷部776之最原始 ◎ 1〇的輸出而進行。進而,亦可取下保護膜10a之形成不完全的 曰曰圓10並續行後續的處理。無論何者,在未於晶圓1〇的整 個加工面形成保護膜10a的狀態,都不會施行後述的雷射加 JL 〇 上述之保護膜檢查程序中,藉由判斷部776而判斷為保 15護膜1〇3正常地形成於整個晶圓ίο之加工面時,解除保持於 保持台711之晶圓10的吸收保持。且晶圓1〇係藉由第2搬送 機構17之保持機構17a而加以吸附保持,且藉由將支撐機構 ⑬ 17b作為中心的旋動動作而搬送至夾具台3上,並加以吸附 保持。保持有晶圓10之夾具台3係定位在攝像機構5之正下 20 方。 因此’藉由攝像機構5及未圖示的控制機構來執行圖案 匹配等之影像處理’並進行雷射光線照射位置之對準 & 述圖案氐配係用以進行於晶圓1〇形成在預定方向之界道, 與沿界道而照射雷射光線之雷射光線照射機構4之對位。 14 200931566 又’對於與形成在晶圓10之上述的界道正交之方向的界 道,亦同樣地進行雷射光線照射位置之對準。 5 10 15 ❹ 20 如上述’若進行雷射光線照射位置之對準,係將夾具 台3移動至照射雷射光線之雷射光線照射機構4所位在的雷 射光線照射區域,並讓預定的界道位在雷射光線照射機構4 的正下方。且一面由雷射光線照射機構4照射脈衝雷射光 線,一面於X方向以預定的加工運送速度來移動夾具台3, 即晶圓10。又,若界道之另一端到達雷射光線照射機構4的 正下方位置,即停止脈衝雷射光線之照射並停止夾具台3, 即晶圓10的移動。藉由進行如上述之雷射光線照射程序, 於晶圓10的界道形成雷射加工溝。此時,即使因雷射光線 之照射而產生殘屑,該殘屑係以保護膜l〇a而予以阻隔,不 會附著於元件及焊墊等。對整個晶圓1〇之界道進行此種雷 射光線照射程序。 沿晶圓10的所有界道進行前述之雷射光線照射程序 後’讓保持有晶圓10之夾具台3回到一開始吸附保持晶圓1〇 之位置’並於此處解除晶圓1〇之吸附保持。且藉由第2搬送 機構Π之保持機構17a而吸附保持具有晶圓1〇之框體^的 左右兩端,並藉由以支撐機構17b為中心的旋動動作而將晶 圓10搬送至洗淨機構8。又,以洗淨機構8而邊旋轉晶圓 邊由洗淨噴嘴供給洗淨水,藉此洗去被覆於晶圓1〇之表面 的水溶性保護膜。此時’於雷射加工時所產生的殘屑亦一 同去除。 洗淨結束,藉由來自空氣喷嘴的空氣供給而乾燥晶圓 15 200931566 ίο ’並藉由第1搬送機構16而將洗淨機構8内之晶圓職出 至暫置台15。搬出至暫置台15之加工後的晶圓1G,係糾 - 晶圓搬出搬入機構14而收納於匣體13之預定位置。 又,將加工結束之晶圓1〇搬送至洗淨機構S,且於進行 5洗淨程序及乾燥程序之期間讓晶圓搬出搬入機構作動, 而把次-將進行加工之加工前的晶圓1〇由£體13搬出至暫 置台15,並藉由第1搬送機構16而將搬出至暫置台μ之晶圓 10搬送至保護膜被覆裝置7。又,對於搬送至保護膜被覆裝 置7之次一將進行加工的晶圓1〇,同樣地進行上述之保護膜 0 10被覆程序。如此,業已進行保護膜被覆程序之晶圓1〇,係 藉由第2搬送機構17而搬送至夾具台3上,執行上述之雷射 光線照射程序。且,業已進行雷射光線照射程序之晶圓丨〇, 係藉由第2搬送機構17而搬送至洗淨機構8,執行上述之洗 淨程序與乾燥程序。 15 如此,依本實施形態之保護膜被覆裝置7,係對於以含 有可吸收紫外線光區域的波長光之成分的液狀樹脂而形成 保護膜10a之晶圓10的加工面,照射紫外線光之波長區域的 光並檢測有無該反射光,當檢測出反射光時,發出未被覆 有保護膜l〇a之主旨,因此當晶圓10之加工面上存有未形成 20 保護膜l〇a之區域或部分時,紫外線光之波長區域的反射光 係未被保護膜10a吸收而加以檢測出,藉此可確認於加工面 未被覆保護膜l〇a之狀態,並可藉由通知該結果,而採取被 覆機構74之檢查、保護膜l〇a之重新被覆等的對策,可避免 在晶圓10的加工面未被覆有保護膜l〇a之狀態下進行雷射 16 200931566 加工。 5 ❹ 10 15 Ο 20 本發明並不限於上述之實施形態’在不脫離本發明旨 趣之範圍内係可進行各種變形。本實施形態係使用照相機 772來拍攝晶圓1〇的加工面(保護膜i〇a),並依該影像資料而 檢測有無反射光,但並不限於照相機772此種攝像機構。嬖 如第6圖所示,亦可取代照相機772而使用紫外線光感測器 777 ’且於保護膜形成程序結束後,該紫外線光感測器777 係可檢測由未形成有保護膜l〇a之加工面所反射之紫外線 光成分之光,當該紫外線光感測器777檢測出預定光量以上 之紫外線光成分時,判斷部778係以有反射光而判斷為保護 膜10a之被覆不完全。 又’本實施形態中,係讓晶圓10之加工面在保護膜檢 查機構751側移動並進行攝像且掃瞄,但亦可讓保護膜檢查 機構751以低速而於晶圓10的半徑方向移動,並藉由電動馬 達712讓晶圓10低速旋轉,藉此而相對性地掃瞄且拍攝整個 晶圓10之加工面。 又,本實施形態中,雷射加工所用之雷射光的波長區 域係設定紫外線光區域之情形,並以形成含有可吸收紫外 線光之波長區域之光的成分之保護膜l〇a為例來進行說 明,然而若雷射加工所用之雷射光的波長區域係譬如 lOOOnm〜3000nm程度的紅外線光區域的情形,亦玎形成含 有可吸收紅外線光之波長區域之光的成分之保護膳l〇a。此 時,光照射機構76係可將照射於晶圓1〇之照射光的波長區 域作為紅外線光區域,並可取代照相機772或紫外線光感測 17 200931566 器777’使用於紅外線光之波長區域具感度之照相機或感測 个貝卿 -'、呢乃U熒轉方式而塗佈形成保 護膜他讀錢構74之例,但並鱗料求紐膜之被覆 5 10 方式’亦可為其他方式。譬如村讓由錄樹驗噴射喷 嘴所組成的喷射頭,於保持在保持台之晶圓的上空橫切式 地移動,將液狀樹脂喷射於晶圓的加工面上而形成保護膜。 又,本實施形態中倾明—體地組裝於雷射加工裝置1 ϋ««裝置7之例’但保護膜被覆裝置單獨地設置時 亦可同樣地適用。 【圖式簡岑软*明】 第1圖係顯示-體地組農有本發明實施形態之保護膜 被覆裝置的雷射加王t置之外觀立體圖。 第2圖係保護膜被覆裝置之分解立體圖。 第3圖係顯不保持台定位在搬入搬出位置之保護膜被 覆裝置的概略縱剖正面圖。 第4圖係顯示保持台定位在作業位置之保護膜被覆裝 置的概略縱剖正面圖。 第5圖係顯示保護膜檢查機構之構成例的概略圖。 第6圖係顯示保護膜檢查機構之變形例的概略圖。 【主要元件符號說明】 L··雷射加工裝置 2...裝置殼體 3…夾具台 4··.雷射光線照射機構 5.. .攝像機構 6.. .顯示機構 20 200931566The processed surface of the wafer 10 is taken. At this time, when the protective film 10a is formed in the imaging region, the irradiation light of the ultraviolet light region is absorbed by the protective film i〇a and is not reflected, so that it becomes a dark image, and if it is in the imaging region, 10 The protective film 10a is not formed, and the irradiation light of the ultraviolet light region is not absorbed and is reflected on the processed surface of the wafer 10 (reflected light), and becomes the same bright image as before the film formation. Further, before the protective film is coated, the image of the wafer 1 after the coating is processed by taking the reference position of the annular frame 11 as a starting point. 15 20 The image data sequentially captured by the camera 772 is obtained from the image data stored in the character 772 - the same person to the calculation unit 775, and the difference between the two images is obtained. Here, as described above, the image data of the imaging area in which the lion a is formed is a dark image. The image data of the imaging area where the protective film is not formed is a brighter image based on the reflected light. When the difference between the brighter image of the processed surface before the protective film is covered, the portion where the protective film (10) is formed is formed, and the portion having a small difference is formed, and the H-cut portion 776 is differentiated by the calculating portion 775.寅 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , It is judged that there is a part on the processing surface that has 13 200931566 protection 骐l〇a. When the judging unit 776 judges that the protective film 1a is not completely covered, the control #773 notifies the notification unit % of the fact and notifies the operator. In this case, for example, the protective film coating process can be performed again by the protective film coating device 7 to re-form the protective film 10a, and then it is checked again whether or not the protective film 10a is formed normally. In this case, even if the protective film 1a is newly formed and the formation of the film 10a is not completed, the liquid resin can be fixed to the resin liquid supply nozzle 741 of the protective film coating device 7, and the inspection and repair work can be performed. . This inspection and repair operation can be performed in accordance with the output of the most original ◎ 1 来自 from the determination unit 776. Further, the dome 10 which is incompletely formed of the protective film 10a may be removed and the subsequent processing may be continued. In any case, in the state in which the protective film 10a is not formed on the entire processed surface of the wafer, the laser and JL described later are not subjected to the above-described protective film inspection program, and the determination unit 776 determines that the protection is 15 When the protective film 1〇3 is normally formed on the processing surface of the entire wafer, the absorption and holding of the wafer 10 held by the holding stage 711 is released. Further, the wafer 1 is sucked and held by the holding mechanism 17a of the second transfer mechanism 17, and is conveyed to the jig table 3 by the rotation operation of the support mechanism 13 17b as a center, and is sucked and held. The jig table 3 holding the wafer 10 is positioned directly below the image pickup mechanism 5. Therefore, 'image processing such as pattern matching is performed by the imaging unit 5 and a control unit (not shown), and the alignment of the laser beam irradiation position is performed and the pattern is formed on the wafer 1 The boundary of the predetermined direction is aligned with the laser beam illumination mechanism 4 that illuminates the laser beam along the boundary. 14 200931566 Further, the alignment of the laser beam irradiation position is performed in the same manner as the boundary formed in the direction orthogonal to the above-described boundary of the wafer 10. 5 10 15 ❹ 20 As described above, if the alignment of the laser beam irradiation position is performed, the jig table 3 is moved to the laser beam irradiation area where the laser beam irradiation mechanism 4 for irradiating the laser beam is located, and the reservation is made. The boundary is located directly below the laser beam irradiation mechanism 4. While the laser beam is irradiated by the laser beam irradiation means 4, the jig table 3, i.e., the wafer 10, is moved at a predetermined processing conveyance speed in the X direction. Further, if the other end of the boundary track reaches the position directly below the laser beam irradiation means 4, the irradiation of the pulsed laser beam is stopped and the jig table 3, that is, the movement of the wafer 10 is stopped. A laser processing groove is formed in the boundary of the wafer 10 by performing the laser light irradiation program as described above. At this time, even if debris is generated by the irradiation of the laser light, the residue is blocked by the protective film 10a, and does not adhere to the element, the pad, or the like. This laser beam illumination procedure is performed on the entire wafer boundary. After performing the aforementioned laser beam irradiation process along all the boundaries of the wafer 10, 'let the fixture table 3 holding the wafer 10 return to the position where the wafer 1 is initially held and held, and the wafer 1 is released therefrom. The adsorption is maintained. The left and right ends of the frame body 1 having the wafer 1 are suction-held by the holding mechanism 17a of the second transfer mechanism, and the wafer 10 is transferred to the washing by the rotation operation centering on the support mechanism 17b. Net agency 8. Further, the washing means 8 is supplied with the washing water by the washing nozzle while rotating the wafer, thereby washing away the water-soluble protective film coated on the surface of the wafer. At this time, the debris generated during laser processing is also removed together. After the cleaning is completed, the wafer 15 is dried by the air supply from the air nozzle, and the wafer in the cleaning mechanism 8 is discharged to the temporary stage 15 by the first transfer mechanism 16. The processed wafer 1G that has been carried out to the temporary stage 15 is stored in the predetermined position of the body 13 by the wafer loading/unloading mechanism 14. In addition, the wafer that has been processed is transferred to the cleaning mechanism S, and the wafer is carried out by the wafer loading and unloading mechanism during the cleaning process and the drying process, and the wafer before processing is processed. The sheet 13 is carried out to the temporary stage 15 by the body 13, and the wafer 10 carried out to the temporary stage μ is transferred to the protective film covering device 7 by the first transfer mechanism 16. Further, the above-described protective film 0 10 coating process is performed in the same manner on the wafer 1 to be processed which is transported to the next time the protective film covering device 7 is processed. In this manner, the wafer 1 which has been subjected to the protective film coating process is transported to the jig table 3 by the second transfer mechanism 17, and the above-described laser beam irradiation program is executed. Further, the wafer defect which has been subjected to the laser beam irradiation process is transferred to the cleaning mechanism 8 by the second transfer mechanism 17, and the above-described cleaning process and drying process are executed. In the protective film coating device 7 of the present embodiment, the processing surface of the wafer 10 on which the protective film 10a is formed by the liquid resin containing the component of the wavelength light which can absorb the ultraviolet light region is irradiated with the wavelength of the ultraviolet light. The light in the area is detected by the presence or absence of the reflected light. When the reflected light is detected, the protective film l〇a is not coated. Therefore, when the processed surface of the wafer 10 is present, the area where the protective film 10a is not formed is present. In some cases, the reflected light in the wavelength region of the ultraviolet light is not detected by the protective film 10a, and it is confirmed that the processed surface is not covered with the protective film 10a, and the result can be notified by By taking measures such as inspection by the covering mechanism 74 and re-coating of the protective film 10a, it is possible to prevent the processing of the laser 16 200931566 from being performed in a state where the processed surface of the wafer 10 is not covered with the protective film 10a. 5 ❹ 10 15 Ο 20 The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. In the present embodiment, the processing surface (protective film i〇a) of the wafer 1 is imaged by the camera 772, and the presence or absence of reflected light is detected based on the image data. However, the present invention is not limited to the image pickup mechanism of the camera 772. As shown in FIG. 6, the ultraviolet light sensor 777' may be used instead of the camera 772, and after the protective film forming process is finished, the ultraviolet light sensor 777 can detect that the protective film is not formed. When the ultraviolet light sensor 777 detects the ultraviolet light component of the predetermined light amount or more, the determination unit 778 determines that the coating of the protective film 10a is incomplete by the reflected light. In the present embodiment, the processed surface of the wafer 10 is moved by the protective film inspection mechanism 751 side and imaged and scanned. However, the protective film inspection mechanism 751 can be moved in the radial direction of the wafer 10 at a low speed. The wafer 10 is rotated at a low speed by the electric motor 712, thereby relatively scanning and photographing the entire processing surface of the wafer 10. Further, in the present embodiment, the wavelength region of the laser light used for the laser processing is set in the ultraviolet light region, and the protective film 10a having a component containing light in a wavelength region capable of absorbing ultraviolet light is taken as an example. Note that, however, if the wavelength region of the laser light used for the laser processing is in the range of, for example, an infrared light region of about 100 nm to 3000 nm, a protective meal containing a component that absorbs light in the wavelength region of the infrared light is formed. At this time, the light irradiation mechanism 76 can use the wavelength region of the illumination light irradiated on the wafer 1 as the infrared light region, and can be used in the wavelength region of the infrared light instead of the camera 772 or the ultraviolet light sensing 17 200931566 777' Sensing camera or sensing a Beiqing-', it is a U-fluorescent method and coating to form a protective film. He read the structure of the money structure 74, but the scales of the film to cover the 5 10 way' can also be other ways . For example, the spray head composed of the spray nozzle is moved transversely to the wafer held by the holding table, and the liquid resin is sprayed onto the processed surface of the wafer to form a protective film. Further, in the present embodiment, the laser processing apparatus 1 ϋ ««example of the apparatus 7 is assembled in a body-wise manner, but the protective film coating apparatus can be similarly applied. [Fig. 1] The first figure is a perspective view showing the appearance of a laser and a coating of a protective film coating device according to an embodiment of the present invention. Fig. 2 is an exploded perspective view of the protective film covering device. Fig. 3 is a schematic longitudinal cross-sectional front view showing a protective film covering device in which the holding table is not positioned at the loading/unloading position. Fig. 4 is a schematic longitudinal cross-sectional front view showing a protective film covering device in which a holding table is positioned at a working position. Fig. 5 is a schematic view showing a configuration example of a protective film inspection mechanism. Fig. 6 is a schematic view showing a modification of the protective film inspection mechanism. [Description of main component symbols] L··Laser processing device 2...Device housing 3...Jig table 4··.Laser light irradiation mechanism 5...Camera mechanism 6.. Display mechanism 20 200931566

7.. .保護膜被覆裝置 8.. .洗淨機構 10.. .晶圓 10a...保護膜 10b...圖案面 11.. .框體 12·.·黏著帶(保護帶) 13.. .匣體 13a...匣體載置部 13b...匣體台 14.. .晶圓搬出搬入機構 15.. .暫置台 16.. .第1搬送機構 16a...保持機構 16b...支撐機構 17.. .第2搬送機構 17a...保持機構 17b...支撐機構 71.. .保持台機構 72.. .保持台收容機構 74.. .被覆機構 75.. .保護膜檢查機構 76.. .光照射機構 77.. .檢測機構 78.. .通知機構 711.. .保持台 711a...吸附夾盤 712.. .電動馬達 712a...驅動軸 713.. .支撐機構 713a...支撐腳 713b...氣筒 714…夾件 721.. .收容容器 721a...外側壁 721b...底壁 721c...内側壁 721d··.穴 722.. .支撐腳 723.. .覆蓋構件 723a...覆蓋部 741.. .樹脂(液)供給喷嘴 741a...喷嘴部 741b...支撐部 742.. .電動馬達 751.. .保護膜檢查機構7.. Protective film coating device 8.. Cleaning mechanism 10.. Wafer 10a... Protective film 10b... Pattern surface 11.. Frame 12·.·Adhesive tape (protective tape) 13 . . . body 13a... body mounting portion 13b... body table 14: wafer loading and unloading mechanism 15.. temporary table 16: first conveying mechanism 16a... holding mechanism 16b...support mechanism 17.. 2nd transport mechanism 17a...holding mechanism 17b...support mechanism 71.. holding station mechanism 72.. holding station storage mechanism 74.. covering mechanism 75.. Protective film inspection mechanism 76.. Light irradiation mechanism 77.. Detection mechanism 78.. Notification mechanism 711.. Holding table 711a... Adsorption chuck 712.. Electric motor 712a... Drive shaft 713 .. support mechanism 713a... support foot 713b... air cylinder 714... clip 721.. storage container 721a... outer side wall 721b... bottom wall 721c... inner side wall 721d · ·. .. support foot 723.. cover member 723a... cover portion 741.. resin (liquid) supply nozzle 741a... nozzle portion 741b... support portion 742.. electric motor 751.. protection Membrane inspection mechanism

761.. .紫外線光LED 762.. .半鏡 19 200931566 763...紫外線光環型光 775...演算部 771...濾鏡 776...判斷部 772...照相機 777...紫外線光感測器 773.. .控制部 774.. .記憶體 778...判斷部 ❹ 20761.. . ultraviolet light LED 762.. half mirror 19 200931566 763... ultraviolet ring type light 775... calculation unit 771... filter 776... judgment unit 772... camera 777... Ultraviolet light sensor 773.. Control unit 774.. Memory 778... Judgment section ❹ 20

Claims (1)

之 曰曰曰曰 200931566 七、申請專利範圍: 1. -種保護膜被覆I置,係於對晶圓的加卫面 線而施行雷射加工前,⑽射光 且包含有: 工面, 保持台,係保持晶圓者; 被覆機構,係將含有可吸收預定波長之光的、 液狀樹脂作為前述保護膜,被覆於保持在該保持^ 圓的加工面; 、口之 光照射機構,係將預定的波長區域之光照射於晶圓 的加工面; 檢測機構,係檢測有無預定波長之反射光,而該預 定波長之反射光係源自以該光照射機構照明的晶圓之 加工面者;及 通知機構’係於藉由該檢測機構而檢測出前述反射 光時,通知未被覆前述保護膜之主旨。 2.如申請專利範圍第1項之保護膜被覆裝置,其中前述預 定之波長區域係紫外線光之波長區域或紅外線光之波 長區域。 21200931566 VII. Patent application scope: 1. - The protective film is covered by I, before the laser processing is performed on the wafer's reinforced surface line. (10) The light is emitted and includes: the work surface, the holding table, and the wafer holder. The coating mechanism includes a liquid resin containing light capable of absorbing a predetermined wavelength as the protective film, and is coated on the processing surface held by the holding circle; and a light irradiation mechanism for the port is a light having a predetermined wavelength region Irradiating the processing surface of the wafer; detecting means for detecting the presence or absence of reflected light of a predetermined wavelength, wherein the reflected light of the predetermined wavelength is derived from the processing surface of the wafer illuminated by the light irradiation mechanism; and the notification mechanism is attached to When the reflected light is detected by the detecting means, it is notified that the protective film is not covered. 2. The protective film coating device of claim 1, wherein the predetermined wavelength region is a wavelength region of ultraviolet light or a wavelength region of infrared light. twenty one
TW097140327A 2007-12-27 2008-10-21 Protection film covering apparatus TW200931566A (en)

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