200927351 九、發明說明： C發明所屬技術領域3 技術領域 本發明係有關於一種將保護膜被覆於半導體晶圓等被 5 加工物之加工面的保護膜被覆裝置及裝設有保護膜被覆裝 置的雷射加工機。 【先前技3 背景技術 Ο 正如所屬技術領域中具有通常知識者所周知，在半導 1〇體元件製造步驟中’係藉由在矽等半導體基板之表面上積 層有絕緣膜與功能膜的積層體，形成可令多數IC、LSI等元 件形成為矩陣狀的半導體晶圓。前述所形成之半導體晶圓 係藉由被稱為跡道(street)的分割預定線區劃出前述元件， 並沿著該跡道進行切斷’藉此製造各個元件。又，於藍寶 15石基板等表面上，藉由形成為格子狀之跡道區劃出多數領 域，且在該業經區劃之領域形成積層有氮化鎵系化合物半 — 導體等的光元件的光元件晶圓可沿著跡道分割成發光二極 體、雷射二極體等各個光元件，並已被廣泛利用於電器上。 沿著跡道分割該種半導體晶圓或光元件晶圓等晶圓的 20方法已有藉由沿著形成於晶圓等被加工物之跡道照射脈衝 - 雷射光線以形成雷射加工溝，並沿著該雷射加工溝藉由機 - 械切斷裝置進行割斷的方法。（例如，參照專利文獻1) 【專利文獻1】特開平10-305420號公報 比起切削加工，雷射加工可加快加工速度，並且即使 5 200927351 是由如藍寶石般的高硬度素材所構成之晶圓，亦可較輕易 地加工。然而’若沿著晶圓的跡道照射雷射光線，則熱能 會集中於照射領域上而產生碎屑’會產生該碎屑附著於元 件表面，使元件品質降低的新問題。 5 ^解決因前述碎屑所產生之問題，已有人提出—種可 使聚乙稀醇等保護膜被覆於晶圓之加工面，並透過保護膜 對晶圓照射雷射光線的雷射加工機。（例如，參照專利文獻 2) 【專利文獻2】特開2〇〇7_2〇1178號公報 10 【發明内容】 發明揭示 發明欲解決之課題 然而，卻產生了因液狀樹脂固著於對晶圓之加工面喷 出形成保護膜之液狀樹脂的噴嘴，使液狀樹脂無法噴出， 15而在晶圓之加工面未被覆有保護膜的狀態下施行雷射加工 的問題。 本發明係有鑑於前述事實而作成，其主要技術課題係 提供具有可確認保護膜是否被覆於被加工物之加工面的功 能的保護膜被覆裝置及雷射加工機。 2〇 解決課題之手段 為解決前述主要技術課題，根據本發明，提供一種保 S蒦膜被覆裝置，係對保持於保持工作台的被加工物供應液 狀樹脂，將保護膜被覆於被加工物之加工面，且該保持工 作台保持施行雷射加工的加工前之被加工物者，該保護膜 200927351 5 被覆裝置包含有： 保護膜檢測機構，係檢測保護膜是否被覆於被加工物 之加工面者； 控制機構，係根據來自前述保護膜檢測機構的檢測信 號判定保護膜是否被覆於被加工物之加工面，當判定為未 被覆保護膜時，輸出警報信號者；及 警報器，係根據來自前述控制機構的警報信號使之作 動者。 ❹ 前述保護膜檢測機構具有氣味感測器，且該氣味感測 10 器檢測樹脂液供應機構所供應之液狀樹脂所含有的氣味成 分。 又，根據本發明，提供一種雷射加工機，包含有： 夾頭工作台，係用以保持被加工物者； 雷射光線照射機構，係對保持於前述夾頭工作台的被 15 加工物照射雷射光線者；及 保護膜被覆裝置，係對保持於保持工作台的被加工物 供應液狀樹脂，將保護膜被覆於被加工物之加工面，且該 保持工作台保持施行雷射加工的加工前之被加工物者，其 特徵在於更包含有： 20 保護膜檢測機構，係檢測保護膜是否被覆於被加工物 之加工面者； 控制機構，係根據來自前述保護膜檢測機構的檢測信 號判定保護膜是否被覆於被加工物之加工面，當判定為未 被覆保護膜時，輸出警報信號者；及 7 200927351 警報器，係根據來自前述控制機構的警報信號使 動者。 發明效果 本發明之保護膜形成裝置係藉由保護膜檢測機構一 5保持於保持工作台的被加工物之加工面是否有保護犋被 覆，根據該檢測信號，當控制機構判定被加工物之加工面 未形成有保護膜時’會作動警報器，故操作員可得知被如 工物之加工面未形成有保護膜。因此，可停止運轉保‘ 形成裝置’確認被加工物之加卫面是否被覆有保護膜。故， !〇不會在被加工物之加工面未被覆有保護膜的狀態下施 射加工。 著 【令Γ相5» 式^ 實施發明之最佳態樣 以下’參照附加圖式詳細說明依本發明所構成之 15膜形祕4切射加讀㈣當實施紐。 、幾 第系肩示裝設有依本發明所構成之保護膜形成與 置的雷射加工機的立體圖。 、 +第圖所示之雷射加工機具有略長方體狀的機殼2。該 機成巧配《有作為保持被加工物之被加工物保持機構的 20夾頭工作口3，該夾頭工作台3可往作為加工進給方向的箭 號X所不之方向移動。夾頭工作台3具有吸附夾頭支偉台 31、及安裝於該吸附夾頭支撐台31上的吸附夹頭32，構: 成可藉由未圖示之吸引機構將作為被加工物之例如圓盤^ 半導體晶圓保持於該吸附夹頭32之表面的載置面上 200927351 夾頭工作台3構造成可藉由未圖示之旋轉機構而旋動。依前 述所構成之夾頭工作台3的吸附夾頭支樓台31上’配設有用 以固定後述環形框的夾钳33。 5 10 15 20 圖示實施態樣之雷射加工機具有對保持於前述夹頭工 作台3之吸附夾頭32上的被加工物照射雷射光線的雷射光 線照射機構4。雷射光線照射機構4包含有呈實質上水平配 置的圓筒狀之套管41。套管41内配設有由YAG雷射振盪器 或YV〇4雷射振盪器所構成之脈衝雷射光線振盪器或具有 重複頻率設定機構的脈衝雷射光線振盡機構。前述套管41 的前端部安裝有用以聚集由脈衝雷射光線振盪機構所振盪 之脈衝雷射光線的聚光器42。 圖示實施態樣之雷射加工機具有拍攝機構5,該拍攝機 構5係拍攝保持於前述夾頭工作台3之吸附夾頭32上的被加 工物之表面’藉由前述雷射光線照射機構4之聚光器42所照 射的雷射光線檢測應加工領域者。該拍攝機構5在圖示實施 _樣中了藉由可見光進行拍攝的-般拍攝元件(CCD) 以外，亦由對被加工物照射紅外線的紅外線照明機構、捕 捉紅由5亥紅外線照明機構照射之紅外線的光學系統、輸出 對應經由該光學系襲捉之紅外線的電性信號的拍攝元件 (紅外線CCD)等所構成，可將拍攝之影像信號送到未圖示之 控制機構。又，面_ & 圖不實施態樣之雷射加工機具有顯示經由 拍攝機構5拍攝之影像的顯示機構6。 圖:實知*態樣之雷射加工機具有可載置用以收容被加 之半導體晶圓10的盒的盒式載置部13a。盒式載置部 9 200927351 13:配設有可藉由未圖示之升降機構往上下移動的盒式工 ° 131且盒13可載置於該盒式工作台131上。半導體晶 圓购占附於安裝在環形框11上的保護帶12之表面，在隔著 保護帶I2文到環形框u支撐的狀態下，收容於前述盒^。 5另外’如第9圖所示，於半導體晶_之表面1〇a上藉由 开V成為格子狀之多數分割預定線1〇1區劃出多數領域且在 該業經區劃之領域形成有1C、LSI等元件102。依前述所構 成之半導體晶圓1〇如第n圖所示，以表面1〇a為上側，其内 面貼附於安裝在環形框^上的保護帶12。 1〇 圖示實施態樣之雷射加工機具有被加工物搬出搬入機 構14 '暫置工作台15、保護膜形成裝置7、洗淨機構8。被 加工物搬出搬入機構14係可搬出收納於前述盒13的加工前 之半導體晶圓10並且將加工後之半導體晶圓10搬入盒13 者。暫置工作台15係暫時放置藉由該被加工物搬出搬入機 15 構14搬出的加工前之半導體晶圓1〇者。本發明之保護膜形 成裝置7配設於將被搬出至暫置工:f乍台15的加工前之半導 體晶圓10搬送至夾頭工作台3的第1搬送路經，係用以將保 護膜被覆於加工前之半導體晶圓10之加工面者。洗淨機構8 配設於將保持於夾頭工作台3的加工後之半導體晶圓10搬 20 送至暫置工作台15的第2搬送路徑，係洗淨去除被覆於加工 後之半導體晶圓1〇之加工面的保護膜者。又’圖示雷射加 工機具有第1搬送機構16及第2搬送機構17。第1搬送機構16 係可將被搬出至暫置工作台15的加工前之半導體晶圓1〇搬 送至保護膜形成裝置7 ’並且將藉由洗淨機構8洗淨的加工 200927351 後之半導體晶圓搬送至暫置工作台15者。第2搬送機構17 係可將藉由保護膜形成裝置7被覆保護膜的加工前之半導 體晶圓10搬送至夾頭工作台3，並且將保持於夾頭工作台3 的加工後之半導體晶圓10搬送至洗淨機構8者。 5 ❹ 10 15 ❹ 20 接著，參照第2圖至第4圖說明前述保護膜形成裝置7。 圖示實施態樣之保護膜形成裝置7具有保持工作台機 構71、及配設成包圍該保持工作台機構71的保持工作台收 谷機構72。保持工作台機構71具有保持工作台Μ1、旋轉驅 動該保持工作台711的電動馬達712、支撐該電動馬達712使 之可往上下方向移動的支撑機構713。保持工作台具有 由多孔性材料所形成之吸附夾頭711a，該吸附夾頭7113連 通於未圖示之吸引機構。因此，保持工作台7丨丨係將被加工 物之半導體晶圓10載置於吸附夾頭711a後，藉由未圖示之 吸引機構使負壓起作用，藉此將半導體晶圓1〇保持於吸附 夾頭711a上。另外，保持工作台711配設有用以固定前述環 形框11的夾鉗714，且前述保持工作台711連結於電動馬達 712的驅動軸712a之上端。前述支撐機構713係由多數支(在 圖示實施態樣中為3支）支撐腳713a、及連結各前述支撐腳 713a且安裝於電動馬達712的多數支(在圖示實施態樣中為 3支)氣壓缸713b所構成。依前述所構成之支撐機構713會藉 由作動氣壓缸713b，將電動馬達712以及保持工作台711定 位於第3圖所示之上方位置之被加工物搬入搬出位置、及第 4圖所示之下方位置之作業位置。 前述保持工作台收容機構72具有收容容器72卜支撐該 11 200927351 收容容器721的3支（第2圖中顯示2支）支撐腳722、安裝於前 述電動馬達712之驅動轴712a的覆蓋構件723。收容容器721 如第3圖及第4圖所示，係由圓筒狀之外側壁721a、底壁 721b、及内側壁721c所構成。底壁721b之中央部設有供前 5 述電動馬達712之驅動轴712a插入的孔721d，且形成有從該 ’ 孔721d之周緣往上方突出的内側壁721c。前述覆蓋構件723 係形成為圓盤狀，且具有從其外周緣往下方突出的覆蓋部 723a。若電動馬達712以及保持工作台711定位於第4圖所示 之作業位置，則依前述所構成之覆蓋構件723的覆蓋部723& 〇 10 會定位在與構成前述收容容器721的内側壁721(；之外侧重 疊且具有間隙之處。 圖示保護臈形成裝置7具有樹脂液供應機構74,該樹脂 液供應機構74係對保持於前述保持工作台711的加工前之 被加工物之半導體晶圓10之表面（加工面）供應液狀樹脂 15者。樹脂液供應機構74具有樹脂液供應喷嘴741及電動馬達 742’該樹脂液供應喷嘴741係朝向保持於保持工作台7ΐι的 加工岫之晶圓之表面供應液狀樹脂者，而該電動馬達Μ]係 ◎ 使該樹脂供應噴嘴W擺動的可正轉反轉者，且，樹脂液供 應喷嘴741連胁連接於未目示之樹脂㈣應源。樹騎供 20應噴嘴741係由水平延伸且前端部往下方彎曲的喷嘴部 74la、及從該対部池之底端往下方延伸的支撐部鳩 所構成，且，支撐部鳩係配設成插入設置於構成前述收 容容器72i之底壁721b的未圖示之插入孔，且連接於未圖* ' 之液狀樹脂供應源。又，在供前述樹脂液供應喷嘴741之支 12 200927351 撐部741b插入的未圖示之插入孔周緣，安裝有用以密封與 支撐部74lb之間隙的密封構件（未圖示）。 5 ❹ 10 15 20 圖示保護旗形成裝置7具有保護膜檢測機構75，該保護 膜檢測機構75如第5圖所示，係檢測保持於前述保持工作台 711的加工前之被加工物之半導體晶圓10之表面（加工面）上 是否被覆有保護膜者。第5圖所示之保護膜檢測機構75具有 吸引筒751、及使該吸引筒751擺動的可正轉反轉之電動馬 達752 ’且該吸引筒751經由吸引管753連接於吸引機構 754。吸引筒751係由水平延伸且前端部往下方彎曲的吸引 部751a、及從該吸引部751a之底端往下方延伸的支撐部 751b所構成，且’支撐部751b係配設成插入設置於構成前 述收容容器721之底壁72 lb的未圖示之插入孔，且連接於前 述吸引管753。又，在供前述吸引筒751之支撐部751b插入 的未圖示之插入孔周緣，安裝有用以密封與支撐部751b之 間隙的密封構件(未圖示）^前述吸引管753配設有氣味感測 器755 ’該氣味感測器755係檢測前述樹脂液供應機構74所 供應之液狀樹脂所含有的氣味成分者。 圖示實施態樣之保護膜形成裝置7具有控制機構7 6及 警報器77 ’該控制機構76係根據來自構成前述保護骐檢測 機構75之氣味感測器755的檢測信號判定保護膜是否被覆 於加工前之被加工物之加工面，當判定為未被覆保護犋 時，輸出警報信號者，且該警報器77係根據來該控制機構 76的警報信號使之作動者。 接著，參照第6圖至第8圖說明前述洗淨機構8。 13 200927351 圖示實施態樣之洗淨機構8具有旋轉工作台機構81、及 配設成包圍該旋轉工作台機構81的洗淨水承接機構82。旋 轉工作台機構81與前述保護膜形成裝置7的保持工作台機 構71相同，具有旋轉工作台8U、旋轉驅動該旋轉工作台811 5的電動馬達812、支撐該電動馬達812使之可往上下方向移 動的支撐機構813。旋轉工作台811具有由多孔性材料所形 成之吸附夾頭811a ’該吸附夾頭81la連通於未圖示之吸引 機構。因此，旋轉工作台811係將被加工物之晶圓載置於吸 附夾頭811a後’藉由未圖示之吸引機構使負壓起作用，藉 10 此將晶圓保持於吸附失頭811 a上。另外，旋轉工作台811配 設有用以固定前述環形框11的夹鉗814,且前述旋轉工作台 811連結於電動馬達812的驅動轴812a之上端。前述支撐機 構813係由多數支(在圖示實施態樣中為3支)支撐腳813a、及 連結各前述支撐腳813a且安裝於電動馬達812的多數支(在 15 圖示實施態樣中為3支）氣壓缸813b所構成。依前述所構成 之支撐機構813會藉由作動氣壓缸813b，將電動馬達812以 及旋轉工作台811定位於第7圖所示之上方位置之被加工物 搬入搬出位置、及第8圖所示之下方位置之作業位置。 前述洗淨水承接機構82具有洗淨水承接容器821、支撐 20 洗淨水承接容器821的3支（第6圖中顯示2支)支撐腳822 '安 裝於前述電動馬達812之驅動軸812a的覆蓋構件823。洗淨 水承接容器821如第7圖及第8圖所示，係由圓筒狀之外側壁 821a、底壁821b、内側壁821c所構成。底壁821b之中央部 設有供前述電動馬達812之驅動軸812a插入的孔821d ’且形 200927351 成有從該孔821d之周緣往上方突出的内側壁821c。又，如 第6圖所示，底壁821b設有排液口 821e，且該排液口 821e連 接有排液管824。前述覆蓋構件823係形成為圓盤狀，且具 有從其外周緣往下方突出的覆蓋部823a。若電動馬達812以 5及旋轉工作台811定位於第7圖所示之作業位置，則依前述 所構成之覆蓋構件823的覆蓋部823a會定位在與構成前述 洗淨水承接容器821的内侧壁82 lc之外側重叠且具有間隙 之處。 〇 圖示洗淨機構8具有用以洗淨保持於前述旋轉工作台 10 811的加工後之被加工物之晶圓的洗淨水供應機構84。洗淨 水供應機構84具有洗淨水噴嘴841及電動馬達842，該洗淨 水喷嘴841係朝向保持於旋轉工作台811的加工後之晶圓噴 出洗淨水者，而該電動馬達842係使該洗淨水喷嘴841擺動 的可正轉反轉者，且’該洗淨水喷嘴841連接於連接於未圖 15不之洗淨水供應源。洗淨水噴嘴841係由水平延伸且前端部 往下方彎曲的噴嘴部841a、及從該噴嘴部841a之底端往下 © 方延伸的支撐部841b所構成，且，支撐部84ib係配設成插 入設置於構成前述洗淨水承接容器821之底壁821b的未圖 示之插入孔，且連接於未圖示之洗淨水供應源。另外，在 20供洗淨水喷嘴841之支樓部84lb插入的未圖示之插入孔周 ' 緣，安裝有用以密封與支撐部841b之間隙的密封構件(未圖 示）。 圖示洗淨機構8具有對保持於旋轉工作台811的洗淨後 之晶圓之表面吹氣的空氣供應機構85。空氣供應機構85具 15 200927351 有空氣喷嘴851及電動馬達(未圖示），該空氣噴嘴851係朝向 保持於旋轉工作台811的晶圓喷出空氣者，而該電動馬達係 使該空氣喷嘴851擺動的可正轉反轉者，且，該空氣喷嘴851 連接於連接於未圖示之空氣供應源。空氣喷嘴851係由水平 5延伸且前端部往下方彎曲的喷嘴部851a、及從該喷嘴部 851a之底端往下方延伸的支撐部851b所構成，且，支撑部 851b係配設成插入設置於構成前述洗淨水承接容器821之 底壁821b的未圖示之插入孔’且連接於未圖示之空氣供應 源。另外，在供空氣噴嘴851之支撐部85比插入的未圖示之 1〇插入孔周緣，安裝有用以密封與支撐部851b之間隙的密封 構件（未圖示）。 接著，參照第.1圖說明前述第丨搬送機構16以及第2搬送 機構17。 第1搬送機構16係配設在相對於暫置工作台15、保護膜 1S形成裝置7、及洗淨機構8均呈等距離之位置處。該第灌送 機構16可與-般所使用之搬送機構呈相同構造，係由吸引 保持前述環雜_簡機構161及域該簡機構161使 之可往上下方向升降且旋轉的支撐機構162所構成 。依前述 所構成之第1搬送機構16會將被搬出至暫置工作台ι5的加 20工前之半導體晶圓10(呈貼附於安裝在環形框U上的保護 帶12之表面的狀態）搬送至保護膜形成裝置7，並且將藉由 洗淨機構8洗淨的加卫後之半導體晶_(呈_於安裝在 環形框11上的保護帶12之表面的狀態）搬送至暫置工作台 200927351 5 ❹ 10 15 20 前述第2搬送機構17係配設在相對於前述夾頭工作台 3、保護膜形成裝置7、及洗淨機構8均呈等距離之位置處。 該第2搬送機構17可與前述第1搬送機構16呈大略相同之構 造，係由吸引保持前述環形框11的保持機構171及支撐該保 持機構171使之可往上下方向升降且旋轉的支撐機構172所 構成。依前述所構成之第2搬送機構π會將藉由保護膜形成 裝置7被覆保護膜的加工前之半導體晶圓1〇(呈貼附於安裝 在環形框11上的保護帶12之表面的狀態）搬送至夾頭工作 台3，並且將保持於夾頭工作台3的加工後之半導體晶圓 1〇(呈貼附於安裝在環形框"上的保護帶12之表面的狀態） 搬送至洗淨機構8。 圖示實施態樣之雷射加工機係依前述所構成，接 說明其作動。 如第1圖所示，隔著保護帶12受到環形框11支撐的加工 前之半導體晶圓1〇(接下來僅以半導體晶圓1〇稱之)係以加 工面之表面lQa為上側，收容於盒13之預定位置。藉由未圖 不之升降機構上下作動盒式卫作台131 ’藉此使收容於盒13 之預定位置的加前之半導體晶圓職位於搬出位置。接 著，作動被加工物搬出搬入機構14使之進退，將定位於搬 出位置的半導體晶15 1G搬出至暫置王作台15。被搬出至暫 置工作台15的半導體晶SUG將實施對準中心位置的中心位 置對準步驟。接著，藉由暫置工作台15對準巾心位置後的 加工則之半導體晶圓丨〇會藉由第1搬送機構16之保持機構 161吸引保持住，並藉由以支制構162為巾心的旋轉動作 17 200927351 5 10 15 20 頭川至構成保護膜形成裝置7的保持1作台爪之吸附央 a上後，被該吸附夾頭7山吸引保持住（晶圓保持步 作么7二環形框11係藉由夾鉗714固定住。此時，保持工 :1定位於第3圖所示之被加n搬出位置，且樹 :應噴嘴7仙糊及㈣麻，定位於自歸工作台 之上方隔離的待機位置。 實％將加工則之半導體晶圓1〇保持於保 :之保紅作台川上的晶圓保持步驟後，接著將保持工作 、疋位於第4圖所示之作業位置，並作動電動馬達％， 以^偉部741b為中心擺動樹脂液供應噴嘴741，將喷嘴術 之前端定位在保持於保持工作台711上的半導體晶圓狀 加工面之表面l〇a的中央領域之上方。接著，作動電動馬達 ，以300〜l〇00rpm的旋轉速度旋轉保持工作台7ιι。因 保持於保持工作台711的半導體晶圓ι〇(呈貼附於安裝 在環形框11上的保護帶12之表面的狀態)在第1〇圖中會往 箭號70所示之方向旋轉。像這樣，在半導體晶圓10旋轉的 狀態下，如第10圖所示，會從樹脂液供應噴嘴741之喷嘴部 74la在將半導趙晶圓1〇之表面i〇a(加工面）之中央領域滴下 預定量之液狀樹脂100,滴下時間為3〇秒左右。另外，液狀 樹脂100期望是例如：PVA(聚乙烯醇）、PEG(聚乙二醇）、 PEO(聚乙烯氣化物）等水溶性抗姓劑。結果，往半導體晶圓 10之表面10a(加工面）之中央領域滴下的液狀樹脂丨〇〇,會藉 由離心力流動至外周部’而被覆半導體晶圓10之表面1〇a。 該液狀樹脂隨著時間硬化，如第11圖所示，於半導體晶圓BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a protective film coating device in which a protective film is coated on a processed surface of a workpiece such as a semiconductor wafer, and a protective film coating device. Laser processing machine. [Prior Art 3] As is well known to those skilled in the art, in the semi-conductive 1 body element manufacturing step, a laminate of an insulating film and a functional film is laminated on the surface of a semiconductor substrate such as germanium. A semiconductor wafer in which elements such as an IC or an LSI are formed in a matrix is formed. The semiconductor wafer formed as described above is formed by dividing a predetermined line portion called a street and cutting it along the track to thereby manufacture the respective elements. Further, on the surface of a sapphire 15 stone substrate or the like, a plurality of fields are formed by a track region formed in a lattice shape, and light having an optical element such as a gallium nitride-based compound semiconductor or a conductor laminated thereon is formed in the field of the region. The component wafer can be divided into individual light elements such as a light emitting diode and a laser diode along the track, and has been widely used in electrical appliances. A method of dividing a wafer such as a semiconductor wafer or an optical element wafer along a track has been performed by irradiating a pulse-laser ray along a track formed on a workpiece such as a wafer to form a laser processing groove. And cutting along the laser processing groove by a mechanical cutting device. (Patent Document 1) Japanese Laid-Open Patent Publication No. Hei 10-305420 discloses that laser processing can speed up processing compared to cutting, and even 5 200927351 is a crystal composed of high-hardness materials such as sapphire. Round, it can also be processed relatively easily. However, if the laser light is irradiated along the track of the wafer, the thermal energy will concentrate on the illumination field and generate debris, which will cause a new problem that the debris adheres to the surface of the element, which degrades the quality of the component. 5 ^ Solving the problems caused by the aforementioned debris, it has been proposed that a laser processing machine that can coat a processing surface of a wafer with a protective film such as polyvinyl alcohol and irradiate the wafer with a protective film through a protective film . (For example, refer to Patent Document 2) [Patent Document 2] Japanese Laid-Open Patent Publication No. Hei 2-7-7〇1178. [Invention] The present invention discloses a problem to be solved by the invention. However, the liquid resin is fixed to the wafer. The nozzle on which the liquid resin forming the protective film is ejected from the processed surface, so that the liquid resin cannot be ejected, and the laser processing is performed in a state where the processed surface of the wafer is not covered with the protective film. The present invention has been made in view of the above-described facts, and a main technical problem thereof is to provide a protective film coating device and a laser processing machine having a function of confirming whether or not a protective film is coated on a processed surface of a workpiece. 2. Means for Solving the Problem In order to solve the above-mentioned main technical problems, according to the present invention, there is provided a S-film coating apparatus for supplying a liquid resin to a workpiece held on a holding table, and coating the protective film on the workpiece. In the processing surface, and the holding table holds the workpiece before the processing for performing the laser processing, the protective film 200927351 5 coating device includes: a protective film detecting mechanism for detecting whether the protective film is covered by the processed object The control means determines whether or not the protective film is applied to the processed surface of the workpiece based on the detection signal from the protective film detecting means, and outputs an alarm signal when it is determined that the protective film is not covered; and the alarm is based on An alarm signal from the aforementioned control mechanism causes the operator to act. The foregoing protective film detecting mechanism has an odor sensor, and the odor sensing device detects the odor component contained in the liquid resin supplied from the resin liquid supply mechanism. Moreover, according to the present invention, there is provided a laser processing machine comprising: a chuck table for holding a workpiece; a laser beam irradiation mechanism for holding a workpiece processed by the chuck table And a protective film coating device for supplying a liquid resin to a workpiece held on the holding table, covering the processing surface of the workpiece with the protective film, and maintaining the laser processing on the holding table The object to be processed before processing is further characterized by: 20 a protective film detecting mechanism for detecting whether the protective film is coated on the processed surface of the workpiece; and the control mechanism is based on the detection from the protective film detecting mechanism The signal determines whether or not the protective film is applied to the processed surface of the workpiece, and when it is determined that the protective film is not covered, the alarm signal is output; and 7 200927351 The alarm is activated based on an alarm signal from the control unit. Advantageous Effects of Invention The protective film forming apparatus of the present invention protects the processed surface of the workpiece held by the protective sheet by the protective film detecting mechanism 5, and according to the detection signal, the control mechanism determines the processing of the processed object. When the protective film is not formed on the surface, the alarm will be activated, so the operator can know that the protective film is not formed on the processed surface of the workpiece. Therefore, it is possible to stop the operation of the "forming device" and confirm whether or not the reinforcing surface of the workpiece is covered with the protective film. Therefore, 〇 does not be processed in a state where the processed surface of the workpiece is not covered with a protective film. The following is a detailed description of the invention. The following is a detailed description of the film formed in accordance with the present invention. And a series of shoulders showing a perspective view of a laser processing machine equipped with a protective film formed according to the present invention. + The laser processing machine shown in the figure has a casing 2 having a slightly rectangular parallelepiped shape. The machine is equipped with a 20-clamp working port 3 as a workpiece holding mechanism for holding a workpiece, and the chuck table 3 can be moved in the direction of the arrow X which is the machining feed direction. The chuck table 3 has a suction chuck support table 31 and an adsorption chuck 32 attached to the adsorption chuck support table 31, and is configured to be, for example, a workpiece by a suction mechanism (not shown). Disc ^ The semiconductor wafer is held on the mounting surface of the surface of the chuck 32. The chuck table 3 is configured to be rotatable by a rotating mechanism (not shown). A clamp 33 for fixing a ring frame to be described later is disposed on the suction chuck support stand 31 of the chuck table 3 configured as described above. 5 10 15 20 The laser processing machine of the illustrated embodiment has a laser beam irradiation mechanism 4 that irradiates the workpiece to be held on the chuck 32 of the chuck table 3 with laser light. The laser beam illumination mechanism 4 includes a cylindrical sleeve 41 that is disposed substantially horizontally. A pulsed laser ray oscillator composed of a YAG laser oscillator or a YV 〇 4 laser oscillator or a pulsed laser ray oscillating mechanism having a repetition frequency setting mechanism is disposed in the sleeve 41. The front end portion of the sleeve 41 is provided with a concentrator 42 for collecting pulsed laser light oscillated by the pulsed laser ray oscillating mechanism. The laser processing machine of the illustrated embodiment has a photographing mechanism 5 that photographs the surface of the workpiece held on the chuck 32 of the chuck table 3 by the aforementioned laser beam irradiation mechanism. The detection of laser light irradiated by the concentrator 42 of 4 should be processed in the field. In addition to the general imaging element (CCD) that is imaged by visible light, the imaging unit 5 is also irradiated with an infrared ray illumination mechanism that irradiates the workpiece with infrared rays, and the capture red is illuminated by the 5 ray infrared illumination mechanism. The optical system of the infrared ray is configured to output an imaging element (infrared CCD) corresponding to an electrical signal of infrared rays captured by the optical system, and the captured video signal can be sent to a control unit (not shown). Further, the laser processing machine of the embodiment of the present invention has a display mechanism 6 for displaying an image captured by the imaging unit 5. Fig.: A laser processing machine of a known type has a cassette mounting portion 13a on which a cartridge for accommodating the semiconductor wafer 10 to be mounted is placed. Cartridge Mounting Unit 9 200927351 13: A cassette type 131 that can be moved up and down by a lifting mechanism (not shown) is disposed, and the cartridge 13 can be placed on the cassette table 131. The semiconductor wafer is attached to the surface of the protective tape 12 attached to the ring frame 11, and is housed in the casing 2 while being supported by the ring frame u via the protective tape I2. 5, as shown in Fig. 9, a plurality of fields are defined on the surface 1〇a of the semiconductor crystal by a plurality of division lines 1〇1 which are lattice-shaped, and 1C is formed in the area of the division. Element 102 such as LSI. The semiconductor wafer 1 constructed as described above has the surface 1〇a as the upper side as shown in the nth figure, and the inner surface thereof is attached to the protective tape 12 mounted on the ring frame. The laser processing machine of the embodiment shown in the drawings has a workpiece loading/unloading mechanism 14' temporary table 15, a protective film forming device 7, and a cleaning mechanism 8. The workpiece carry-in/out mechanism 14 can carry out the semiconductor wafer 10 stored before the processing of the cartridge 13 and carry the processed semiconductor wafer 10 into the cartridge 13. The temporary stage 15 temporarily places the semiconductor wafer before processing which is carried out by the workpiece loading/unloading machine 15 . The protective film forming apparatus 7 of the present invention is disposed in a first transport path for transporting the semiconductor wafer 10 before being processed to the chucking station 15 to the chuck table 3, and is used for protection. The film is coated on the surface of the semiconductor wafer 10 before processing. The cleaning mechanism 8 is disposed on the second transport path for transporting the processed semiconductor wafer 10 held by the chuck table 3 to the temporary stage 15, and is washed and removed to cover the processed semiconductor wafer. 1〇The protective film of the processing surface. Further, the illustrated laser processing machine includes a first conveying mechanism 16 and a second conveying mechanism 17. The first transport mechanism 16 is a semiconductor crystal which can transport the semiconductor wafer 1 before processing which has been carried out to the temporary stage 15 to the protective film forming apparatus 7' and clean the processing by the cleaning mechanism 8 200927351. The round is transported to the temporary workbench 15. The second transfer mechanism 17 transports the semiconductor wafer 10 before processing to which the protective film is coated by the protective film forming device 7 to the chuck table 3, and holds the processed semiconductor wafer held on the chuck table 3 10 Transfer to the cleaning mechanism 8. 5 ❹ 10 15 ❹ 20 Next, the protective film forming apparatus 7 will be described with reference to Figs. 2 to 4 . The protective film forming apparatus 7 of the illustrated embodiment has a holding table mechanism 71 and a holding table receiving mechanism 72 disposed to surround the holding table mechanism 71. The holding table mechanism 71 has an electric motor 712 that holds the table 1 and rotationally drives the holding table 711, and a support mechanism 713 that supports the electric motor 712 so as to be movable in the vertical direction. The holding table has an adsorption chuck 711a formed of a porous material, and the adsorption chuck 7113 is connected to a suction mechanism (not shown). Therefore, after the semiconductor wafer 10 holding the workpiece 7 is placed on the chuck 711a, the negative pressure is applied by a suction mechanism (not shown), thereby holding the semiconductor wafer 1 On the adsorption chuck 711a. Further, the holding table 711 is provided with a clamp 714 for fixing the ring frame 11, and the holding table 711 is coupled to the upper end of the drive shaft 712a of the electric motor 712. The support mechanism 713 is composed of a plurality of support members (three in the illustrated embodiment) support leg 713a, and a plurality of support rods 713a and attached to the electric motor 712 (in the illustrated embodiment, 3) A pneumatic cylinder 713b is formed. The support mechanism 713 configured as described above is configured to move the electric motor 712 and the holding table 711 to the workpiece loading/unloading position at the upper position shown in FIG. 3 by the operating pneumatic cylinder 713b, and the fourth embodiment shown in FIG. The working position in the lower position. The holding table housing mechanism 72 has a housing container 72 that supports three (two in the second drawing) supporting legs 722 and a cover member 723 attached to the driving shaft 712a of the electric motor 712. The storage container 721 is composed of a cylindrical outer side wall 721a, a bottom wall 721b, and an inner side wall 721c as shown in Figs. 3 and 4 . A hole 721d into which the drive shaft 712a of the electric motor 712 is inserted is provided in the center portion of the bottom wall 721b, and an inner side wall 721c that protrudes upward from the periphery of the hole 721d is formed. The covering member 723 is formed in a disk shape and has a covering portion 723a that protrudes downward from the outer peripheral edge thereof. When the electric motor 712 and the holding table 711 are positioned at the working position shown in FIG. 4, the covering portion 723 & 〇 10 of the covering member 723 configured as described above is positioned at the inner side wall 721 constituting the housing container 721 ( The outer side overlaps and has a gap. The protective sputum forming device 7 has a resin liquid supply mechanism 74 that is a pair of semiconductor wafers that are held before the processing of the holding table 711. The surface (processing surface) of 10 is supplied with a liquid resin 15. The resin liquid supply mechanism 74 has a resin liquid supply nozzle 741 and an electric motor 742' which is oriented toward the wafer held by the holding table 7 The liquid resin is supplied to the surface, and the electric motor 系 is a forward-reversible inverting person that swings the resin supply nozzle W, and the resin liquid supply nozzle 741 is connected to the resin (four) which is not shown. The tree riding nozzle 741 is composed of a nozzle portion 74la that extends horizontally and has a front end portion bent downward, and a support portion that extends downward from a bottom end of the crotch pool, and The enthalpy is inserted into an insertion hole (not shown) provided in the bottom wall 721b of the storage container 72i, and is connected to a liquid resin supply source not shown in Fig. 4. Further, the resin liquid supply nozzle 741 is supplied. A support member (not shown) for sealing the gap with the support portion 74lb is attached to the periphery of the insertion hole (not shown) into which the support portion 741b is inserted. 5 ❹ 10 15 20 The protection flag forming device 7 is protected. The film detecting mechanism 75, as shown in Fig. 5, detects whether or not the surface (processing surface) of the semiconductor wafer 10 held by the workpiece before the processing of the holding table 711 is covered with protection. The protective film detecting mechanism 75 shown in Fig. 5 has a suction cylinder 751 and an electric motor 752' that can rotate forward and reverse the swing cylinder 751, and the suction cylinder 751 is connected to the suction mechanism via the suction pipe 753. 754. The suction cylinder 751 is composed of a suction portion 751a that extends horizontally and has a front end portion bent downward, and a support portion 751b that extends downward from a bottom end of the suction portion 751a, and the support portion 751b is configured to be inserted and set. An insertion hole (not shown) constituting the bottom wall 72 lb of the storage container 721 is connected to the suction tube 753. Further, it is mounted on the periphery of an insertion hole (not shown) into which the support portion 751b of the suction tube 751 is inserted. There is a sealing member (not shown) for sealing the gap with the support portion 751b. The suction tube 753 is provided with an odor sensor 755. The odor sensor 755 detects the liquid supply supplied by the resin liquid supply mechanism 74. The odor component contained in the resin. The protective film forming device 7 of the embodiment has a control mechanism 76 and an alarm 77. The control mechanism 76 is based on the odor sensor 755 from the protective flaw detecting mechanism 75. The detection signal determines whether or not the protective film is covered on the processed surface of the workpiece before processing, and when it is determined that the protective film is not covered, the alarm signal is output, and the alarm 77 is activated based on the alarm signal from the control unit 76. By. Next, the above-described cleaning mechanism 8 will be described with reference to Figs. 6 to 8 . 13 200927351 The cleaning mechanism 8 of the illustrated embodiment has a rotary table mechanism 81 and a washing water receiving mechanism 82 disposed to surround the rotary table mechanism 81. Similarly to the holding table mechanism 71 of the protective film forming device 7, the rotary table mechanism 81 has a rotary table 8U, an electric motor 812 that rotationally drives the rotary table 811 5, and supports the electric motor 812 so as to be movable up and down. Moving support mechanism 813. The rotary table 811 has an adsorption chuck 811a' formed of a porous material. The adsorption chuck 81la communicates with a suction mechanism (not shown). Therefore, the rotary table 811 holds the wafer of the workpiece on the adsorption chuck 811a, and the negative pressure acts by the suction mechanism (not shown), thereby holding the wafer on the adsorption head 811a. . Further, the rotary table 811 is provided with a clamp 814 for fixing the ring frame 11, and the rotary table 811 is coupled to the upper end of the drive shaft 812a of the electric motor 812. The support mechanism 813 is a support leg 813a supported by a plurality of supports (three in the illustrated embodiment) and a plurality of support members 813a that are coupled to the support legs 813a and mounted on the electric motor 812 (in the illustrated embodiment of Fig. 15 3) air cylinder 813b. The support mechanism 813 configured as described above is configured to move the electric motor 812 and the rotary table 811 to the workpiece loading/unloading position at the upper position shown in FIG. 7 by the operating pneumatic cylinder 813b, and the loading and unloading position shown in FIG. The working position in the lower position. The washing water receiving mechanism 82 has the washing water receiving container 821 and the support 20 washing water receiving container 821 (three in the sixth drawing) supporting legs 822' attached to the driving shaft 812a of the electric motor 812. Covering member 823. As shown in Figs. 7 and 8, the washing water receiving container 821 is composed of a cylindrical outer side wall 821a, a bottom wall 821b, and an inner side wall 821c. The center portion of the bottom wall 821b is provided with a hole 821d' into which the drive shaft 812a of the electric motor 812 is inserted, and the shape 200927351 is formed with an inner side wall 821c which protrudes upward from the periphery of the hole 821d. Further, as shown in Fig. 6, the bottom wall 821b is provided with a liquid discharge port 821e, and the liquid discharge port 821e is connected to the liquid discharge pipe 824. The covering member 823 is formed in a disk shape and has a covering portion 823a that protrudes downward from the outer peripheral edge thereof. When the electric motor 812 is positioned at the working position shown in FIG. 7 by the rotary table 811, the cover portion 823a of the cover member 823 configured as described above is positioned on the inner side wall of the washing water receiving container 821. 82 lc has overlapping outer sides and has gaps. The illustrated cleaning mechanism 8 has a washing water supply mechanism 84 for washing the wafer of the processed workpiece held by the rotary table 10 811. The washing water supply mechanism 84 includes a washing water nozzle 841 that ejects the washing water toward the processed wafer held by the rotary table 811, and an electric motor 842 that makes the electric motor 842 The washing water nozzle 841 is swung forward and reversed, and the washing water nozzle 841 is connected to a washing water supply source not connected to FIG. The washing water nozzle 841 is composed of a nozzle portion 841a that extends horizontally and has a front end portion bent downward, and a support portion 841b that extends downward from the bottom end of the nozzle portion 841a, and the support portion 84ib is configured An insertion hole (not shown) provided in the bottom wall 821b of the above-described washing water receiving container 821 is inserted and connected to a washing water supply source (not shown). Further, a sealing member (not shown) for sealing the gap with the support portion 841b is attached to the peripheral edge of the insertion hole (not shown) into which the branch portion 84lb of the washing water nozzle 841 is inserted. The illustrated cleaning mechanism 8 has an air supply mechanism 85 that blows the surface of the wafer that has been cleaned on the rotary table 811. The air supply mechanism 85 has 15 200927351 having an air nozzle 851 and an electric motor (not shown) that discharges air toward the wafer held by the rotary table 811, and the electric motor makes the air nozzle 851 The swinging can be reversed and reversed, and the air nozzle 851 is connected to an air supply source (not shown). The air nozzle 851 is constituted by a nozzle portion 851a that extends from the horizontal surface 5 and has a front end portion bent downward, and a support portion 851b that extends downward from a bottom end of the nozzle portion 851a, and the support portion 851b is disposed to be inserted and disposed. An insertion hole (not shown) constituting the bottom wall 821b of the washing water receiving container 821 is connected to an air supply source (not shown). Further, a sealing member (not shown) for sealing the gap with the support portion 851b is attached to the support portion 85 of the air supply nozzle 851 over the peripheral edge of the insertion hole (not shown). Next, the second transport mechanism 16 and the second transport mechanism 17 will be described with reference to Fig. 1 . The first conveying mechanism 16 is disposed at a position equidistant from the temporary table 15, the protective film 1S forming device 7, and the cleaning mechanism 8. The first infusion mechanism 16 can have the same structure as the conventionally used conveying mechanism, and is supported by the supporting mechanism 162 that sucks and holds the ring-shaped mechanism 161 and the mechanism 161 so as to be movable up and down and rotated. Composition. In the first transfer mechanism 16 configured as described above, the semiconductor wafer 10 before being loaded onto the temporary stage ι5 is attached to the surface of the protective tape 12 attached to the ring frame U. The film is transported to the protective film forming device 7, and the cured semiconductor crystals (in a state of being on the surface of the protective tape 12 attached to the ring frame 11) washed by the cleaning mechanism 8 are transported to the temporary work. Taiwan 200927351 5 ❹ 10 15 20 The second conveying mechanism 17 is disposed at a position equidistant from the chuck table 3, the protective film forming device 7, and the cleaning mechanism 8. The second transport mechanism 17 can have substantially the same structure as the first transport mechanism 16, and is a support mechanism that sucks and holds the ring frame 11 and a support mechanism that supports the retaining mechanism 171 so as to be movable up and down and rotated. 172 constitutes. In the second transfer mechanism π configured as described above, the semiconductor wafer 1 before processing of the protective film by the protective film forming device 7 is attached (attached to the surface of the protective tape 12 attached to the ring frame 11). Transfer to the chuck table 3, and transport the processed semiconductor wafer 1 〇 (in a state of being attached to the surface of the protective tape 12 mounted on the ring frame) held by the chuck table 3 to Washing mechanism 8. The laser processing machine of the illustrated embodiment is constructed as described above, and its operation is explained. As shown in Fig. 1, the semiconductor wafer 1 before processing (hereinafter referred to as only the semiconductor wafer 1) supported by the ring frame 11 via the protective tape 12 is placed on the upper surface of the processed surface lQa, and is accommodated. At the predetermined position of the box 13. The advancement of the semiconductor wafer 131 at a predetermined position of the cartridge 13 is performed by the elevating mechanism (not shown). Then, the workpiece is carried out by the loading and unloading mechanism 14 to advance and retreat, and the semiconductor crystal 15 1G positioned at the unloading position is carried out to the temporary king table 15 . The semiconductor crystal SUG that is carried out to the temporary stage 15 will perform a center position alignment step of the alignment center position. Then, the semiconductor wafer cassette processed by the temporary table 15 after being aligned with the center of the core is sucked and held by the holding mechanism 161 of the first conveying mechanism 16, and is made into a towel by the support structure 162. Spinning action of the heart 17 200927351 5 10 15 20 After the holding of the protective film forming device 7 and the holding of the protective film forming device 7 as the holding claw a, it is attracted by the suction chuck 7 (wafer holding step 7) The second ring frame 11 is fixed by the clamp 714. At this time, the maintenance work: 1 is positioned at the n-loaded position shown in Fig. 3, and the tree: the nozzle 7 is paste and (4) hemp, positioned at the self-return Standby position isolated above the workbench. Actually, the semiconductor wafer of the processing is kept at the warranty: after the wafer holding step on the Taiwanese government, the job will remain in operation, and the operation shown in Fig. 4 will be maintained. Positioning and actuating the electric motor %, oscillating the resin liquid supply nozzle 741 around the center portion 741b, and positioning the front end of the nozzle at the center of the surface l〇a of the semiconductor wafer-like processing surface held on the holding table 711 Above the field. Then, actuate the electric motor to 300~ l 00 rpm rotation speed rotation holding table 7 ι. The semiconductor wafer ι (maintained in the state of being attached to the surface of the protective tape 12 mounted on the ring frame 11) held in the holding table 711 is in the first drawing. In the state in which the semiconductor wafer 10 is rotated, as shown in Fig. 10, the semiconductor wafer 10 is sprayed from the nozzle portion 74la of the resin liquid supply nozzle 741. A predetermined amount of the liquid resin 100 is dropped on the center of the surface i〇a (machined surface), and the dropping time is about 3 sec. Further, the liquid resin 100 is desirably, for example, PVA (polyvinyl alcohol) or PEG (poly eu A water-soluble anti-surname agent such as diol) or PEO (polyethylene vapor). As a result, the liquid resin enthalpy dropped into the central region of the surface 10a (machined surface) of the semiconductor wafer 10 flows by centrifugal force to The outer peripheral portion is covered with the surface 1〇a of the semiconductor wafer 10. The liquid resin is hardened with time, as shown in Fig. 11, on the semiconductor wafer
18 200927351 10之表面10a形成保護膜110(保護膜被覆步驟）。該保護膜 110之厚度係取決於從前述樹脂液供應喷嘴741滴下的液狀 樹脂100的量，可為1〜ΙΟμιη左右。 藉由前述保護膜被覆步驟將保護膜110被覆於半導體 5 晶圓10之加工面之表面l〇a後，接著實施檢測保護膜11〇是 否被覆於半導體晶圓10之表面10a的保護膜檢測步驟。即， 保護膜檢測機構75之控制機構76會如第5圖所示，作動電動 馬達752，以支撐部751b為中心擺動吸引筒751，將吸引部 © 751a定位在保持於保持工作台711上的半導體元件1〇之上 10 方。然後，作動電動馬達712，以lOOrpm的旋轉速度旋轉保 持工作台711，並且作動保護膜檢測機構75之吸引機構 754,經由吸引管753以及吸引筒751吸引保持於保持工作台 711上的半導體元件1〇之上方的空氣。此時，在保護膜被覆 步驟中’若前述半導體晶圓10之表面l〇a上形成有保護膜 15 110 ’則可透過吸引筒751同時吸引PVA(聚乙烯醇）等液狀樹 脂100所含有之醋酸等氣味成分。若透過吸引筒751所吸引 ® 之空氣内含有醋酸等氣味成分，則可藉由配設於吸引管753 的氣味感測器755檢測出來。然後，藉由氣味檢測器755檢 測出的醋酸等氣味成分的濃度為預定值以上時，控制機構 20 76會判定半導體晶圓10之表面l〇a上形成有保護膜110。另 - 一方面’藉由氣味檢測器755檢測出的醋酸等氣味成分的濃 . 度低於預定值時，控制機構76會判定半導體晶圓10之表面 10a上未形成有保護膜110。然後，控制機構76判定半導體 晶圓10之表面10a上未形成有保護膜110時，會對警報器77 19 200927351 輸出警報信號。結果，警報器77會作動，操作員可得知半 導體晶圓10之表面l〇a上未形成有保護膜11〇。因此，操作 員可停止運轉雷射加工機’確認半導體晶圓1G之表面伽上 是否被覆有保護膜110。然後，若操作貝確認半導體晶圓川 5之表面IGa上未被覆有保護膜11G，則可檢查保護膜形成裝 置7的樹脂液供射嘴74巧，確認液狀樹脂是否固著於樹 脂液供應喷嘴741等之故障處後進行修補。因此，不會在半 導體晶圓1G之表面IGa上未被覆有保護膜m的狀態下施行 後述雷射加工。 1〇 在前述保護膜檢測步驟中，判定為半導體晶圓10之表 面l〇a上被覆有保護膜110時，會將保持工作台711定位於第 3圖所示之被加工物搬入搬出位置，並且解除保持於保持工 作台711的半導體晶圓10的吸弓j保持。然後，保持工作台π 上的半導體晶圓10會接由第2搬送機構17之保持機構m吸 15引保持住’並藉由以支擇機構172為中心的旋轉動作被搬送 至夾頭工作台3之吸附爽頭3 2上後，被該吸附夾頭3 2吸引保 持住。如此一來，吸引保持半導體晶圓1〇的夾頭工作台3會 藉由未圖示之移動機構定位在配設於雷射光線照射機構4 的拍攝機構5之正下方。 ：〇 若夾頭工作台3定位於拍攝機構5之正下方，則會藉由： 拍攝機構5以及未圖示之控制機構實行用以進行往預定方 向形成於半導體晶圓10的跡道101與沿著跡道101照射雷射 光線的雷射光線照射機構4之聚光器4 2之對位的圖案匹配 等影像處理’以達成雷射光線照射位置的調整。又，亦可 20 200927351 5 ❹ 10 15 ❹ 20 針對形成於半導體晶圓10的相對於前述預定方向往直角延 伸的跡道101同樣地達成雷射光線照射位置的調整。此時， 半導體晶圓10的形成有跡道101之表面1〇£1雖形成有保護膜 110，但是當保護膜110並非透明時，可用紅外線拍攝，從 表面進行調整。 如前述所示地檢測出保持於夾頭工作台3上的半導體 晶圓10所形成之跡道101，並進行雷射光線照射位置的調整 後，接著如第12(a)圖所示，將夹頭工作台3移動至照射雷射 光線的雷射光線照射機構4之聚光器42所在位置的雷射光 線照射領域，並將預定之跡道1 〇 1定位於聚光器42之正下 方。此時，半導體晶圓丨〇如第12(a)圖所示，係定位於使跡 道101之一端（第12(a)圖中為左端）位於聚光器42之正下方 之處。接著，從雷射光線照射機構4之聚光器42照射脈衝雷 射光線並且使夾頭工作台3以預定之加工進給速度往第 12(a)圖中箭號XI所示之方向移動（雷射光照射步驟）。然 後，如第12(b)圖所示，若跡道1〇1之另一端（第12(a)圖中為 右端)抵達聚光器42的正下方位置，則停止照射脈衝雷射光 線，並且停止移動夾頭工作台3，暨，半導體晶圓1〇。該雷 射光線照射步驟中’係將脈衝雷射光線的聚光點p對準跡道 101的表面附近。 藉由實施前述雷射光線照射步驟，半導體晶圓10的跡 道101可如第13圖所示般形成雷射加工溝丨20。此時，如第 13圖所示’即使因照射雷射光線而產生碎屑130,該碎屑丨3〇 亦可被保護膜11〇隔絕，而不會附著於元件1〇2以及接合墊 21 200927351 等。然後，對半導體晶圓10的所有跡道1〇1實施前述雷射光 線照射步驟。 另外’可依例如下述加工條件進行前述雷射光線照射 步驟。 · 5雷射光線之光源：YV04雷射或YAG雷射 波長 ：355nm 重複頻率 ：20kHz18 The surface 10a of 200927351 10 forms a protective film 110 (protective film covering step). The thickness of the protective film 110 depends on the amount of the liquid resin 100 dropped from the resin liquid supply nozzle 741, and may be about 1 to ΙΟμηη. After the protective film 110 is applied to the surface 10a of the processed surface of the semiconductor 5 wafer 10 by the protective film coating step, a protective film detecting step of detecting whether the protective film 11 is coated on the surface 10a of the semiconductor wafer 10 is performed. . That is, the control mechanism 76 of the protective film detecting means 75 activates the electric motor 752 as shown in Fig. 5, swings the suction cylinder 751 around the support portion 751b, and positions the suction portion 751a on the holding table 711. The semiconductor element 1 is 10 degrees above. Then, the electric motor 712 is actuated to rotate the holding table 711 at a rotational speed of 100 rpm, and the suction mechanism 754 of the protective film detecting mechanism 75 is actuated to attract the semiconductor element 1 held on the holding table 711 via the suction pipe 753 and the suction cylinder 751. The air above the raft. At this time, in the protective film coating step, if the protective film 15 110 ' is formed on the surface 10a of the semiconductor wafer 10, the liquid resin 100 such as PVA (polyvinyl alcohol) can be sucked through the suction cylinder 751. Odor components such as acetic acid. If the odor component such as acetic acid is contained in the air sucked into the suction cylinder 751, it can be detected by the scent sensor 755 disposed in the suction pipe 753. When the concentration of the odor component such as acetic acid detected by the odor detector 755 is equal to or greater than a predetermined value, the control unit 306 determines that the protective film 110 is formed on the surface 10a of the semiconductor wafer 10. On the other hand, when the concentration of the odor component such as acetic acid detected by the odor detector 755 is lower than a predetermined value, the control unit 76 determines that the protective film 110 is not formed on the surface 10a of the semiconductor wafer 10. Then, when the control unit 76 determines that the protective film 110 is not formed on the surface 10a of the semiconductor wafer 10, an alarm signal is output to the alarm 77 19 200927351. As a result, the alarm 77 is actuated, and the operator can know that the protective film 11 is not formed on the surface 10a of the semiconductor wafer 10. Therefore, the operator can stop the operation of the laser processing machine to confirm whether or not the surface of the semiconductor wafer 1G is covered with the protective film 110. Then, when the surface IGA of the semiconductor wafer 5 is not covered with the protective film 11G, the resin liquid supply nozzle 74 of the protective film forming apparatus 7 can be inspected to confirm whether or not the liquid resin is fixed to the resin liquid supply. Repair is performed after the failure of the nozzle 741 or the like. Therefore, the laser processing described later is not performed in a state where the protective film m is not covered on the surface IGa of the semiconductor wafer 1G. In the protective film detecting step, when it is determined that the surface 10a of the semiconductor wafer 10 is covered with the protective film 110, the holding table 711 is positioned at the workpiece loading/unloading position shown in FIG. Further, the suction j held by the semiconductor wafer 10 held by the holding table 711 is released. Then, the semiconductor wafer 10 on the holding stage π is sucked and held by the holding mechanism m of the second transfer mechanism 17 and is transferred to the chuck table by the rotation operation centered on the branching mechanism 172. After the adsorption head 3 of 3 is sucked, it is attracted by the adsorption chuck 32. As a result, the chuck table 3 that sucks and holds the semiconductor wafer 1 is positioned directly under the photographing mechanism 5 disposed in the laser beam irradiation unit 4 by a moving mechanism (not shown). : If the chuck table 3 is positioned directly below the photographing mechanism 5, the photographing mechanism 5 and a control mechanism (not shown) perform the track 101 for forming the semiconductor wafer 10 in a predetermined direction. The pattern processing such as pattern matching of the concentrator 4 2 of the laser beam irradiation mechanism 4 that irradiates the laser beam along the track 101 is adjusted to achieve the adjustment of the laser beam irradiation position. Further, 20 200927351 5 ❹ 10 15 ❹ 20 The adjustment of the laser beam irradiation position is similarly performed for the track 101 formed on the semiconductor wafer 10 at a right angle with respect to the predetermined direction. At this time, although the protective film 110 is formed on the surface 1 of the semiconductor wafer 10 on which the track 101 is formed, when the protective film 110 is not transparent, it can be photographed by infrared rays and adjusted from the surface. As described above, the track 101 formed by the semiconductor wafer 10 held on the chuck table 3 is detected, and the position of the laser beam irradiation position is adjusted, and then, as shown in FIG. 12(a), The chuck table 3 is moved to the field of laser light irradiation at the position of the concentrator 42 of the laser beam irradiation mechanism 4 that irradiates the laser light, and the predetermined track 1 〇1 is positioned directly below the concentrator 42. . At this time, the semiconductor wafer, as shown in Fig. 12(a), is positioned such that one end of the track 101 (the left end in Fig. 12(a)) is located directly below the concentrator 42. Next, the pulsed laser beam is irradiated from the concentrator 42 of the laser beam irradiation mechanism 4 and the chuck table 3 is moved in the direction indicated by the arrow XI in the 12th (a) drawing at a predetermined machining feed speed ( Laser light irradiation step). Then, as shown in Fig. 12(b), if the other end of the track 1〇1 (the right end in the 12th (a)th view) reaches the position directly below the concentrator 42, the irradiation of the pulsed laser light is stopped. And stop moving the chuck table 3, cum, semiconductor wafer 1 〇. In the laser light irradiation step, the spot p of the pulsed laser light is aligned near the surface of the track 101. By performing the aforementioned laser light irradiation step, the track 101 of the semiconductor wafer 10 can be formed into a laser processing groove 20 as shown in Fig. 13. At this time, as shown in Fig. 13, even if the debris 130 is generated by the irradiation of the laser light, the chip 丨3〇 can be isolated by the protective film 11 without adhering to the element 1〇2 and the bonding pad 21 200927351 and so on. Then, the aforementioned laser light irradiation step is performed on all the tracks 1〇1 of the semiconductor wafer 10. Further, the above-described laser light irradiation step can be carried out according to, for example, the following processing conditions. · 5 laser light source: YV04 laser or YAG laser Wavelength: 355nm Repeat frequency: 20kHz
輸出 ：3W 聚光點徑 ：q 10 加工進給速度 ：100mm/秒 沿著半導體晶圓10的所有跡道實施前述雷射光線照射 步驟後，保持有半導體晶圓10的炎頭工作台3會回到一開始 的吸引保持半導體晶圓10的位黑，並在此解除半導體晶圓 10的吸引保持。然後’半導體晶圓10會藉由第2搬送機構17 15之保持機構171吸引保持住，並藉由以支撐機構172為中心 的旋轉動作被搬送至構成洗淨機構8的旋轉工作台811之吸、 附夾頭811a上後’被該吸附夾頭81la吸引保持住。此時， 0 此時，洗淨水喷嘴841以及空氣喷嘴851會如第6圖及第7圖 所示’定位於自旋轉工作台811之上方隔離的待機位置。 20 將加工後之半導體晶圓10保持於洗淨機構8之旋轉工 作台811上後，接著實行洗淨步驟。即，將旋轉工作台811 定位於第8圖所示之作業位置，並且驅動洗淨水供應機構86 的電動馬達842，將洗淨水供應喷嘴841之喷嘴部841a的喷 出口定位在保持於旋轉工作台811上的半導體晶圓1〇之中 22 200927351 心部上方。然後，以例如300〜500rpm的旋轉速度旋轉旋轉 工作台811，並且從喷嘴部841a的喷出口噴出由純水與空氣 所構成之洗淨水。即，喷嘴部841a係由所謂的二流體噴嘴 所構成’可供應0.2Mpa左右的純水’並且可供應〇 3〜〇.5Mpa ' 5 左右的空氣，藉氣壓喷出純水來洗淨半導體晶圓1〇之加工 面之表面10a。此時，驅動電動馬達842，使從洗淨水供應 喷嘴841之噴嘴部841a的喷出口噴出的洗淨水在自喷至保 持於旋轉工作台811上的半導體晶圓10之中心的位置到外 〇 周部的位置的所需角度範圍下擺動。結果，由於被覆於半 10 導體晶圓1〇之表面1 〇a上的保護膜110如前述所示般係藉由 水溶性樹脂所形成，故可輕易洗去保護膜11〇，並且亦可除 去雷射加工時所產生的碎屑130。 前述洗淨步驟結束後，接著實行乾燥步驟。即，將洗 淨水供應喷嘴841定位於待機位置’並且將構成空氣供應機 15 構85之空氣噴嘴851的喷嘴部851a之喷出口定位在保持於 旋轉工作台811上的半導體晶圓10之中心部上方。然後，以 Ο 例如2〇〇〇〜3000rpm的旋轉速度旋轉旋轉工作台811，並且從 喷嘴部851a的喷出口喷出空氣15秒左右。此時，使從空氣 喷嘴851之喷嘴部851a的喷出口喷出的空氣在自喷至保持 2〇 於旋轉工作台811上的半導體晶圓10之中心的位置到外周 - 部的位置的所需角度範圍下擺動。結果，可乾燥半導體晶 圓10的表面。 如前述所示般結束加工後之半導體晶圓10的洗淨及乾 燥後’停止旋轉旋轉工作台811，並且將空氣供應機構85之 23 200927351 空氣喷嘴851定位於待機位置。然後，將旋轉工作台811定 位於第7圖所示之被加工物搬入搬出位置，並且解除保持於 旋轉工作台811上的半導體晶圓10的吸引保持。接著，藉由 第1搬送機構16將將旋轉工作台811上的加工後之半導體晶 5圓10搬出至暫置工作台15。被搬出至暫置工作台15的加工 後之半導體晶圓1〇會藉由被加工物搬出搬入機構丨4收納於 盒13之預定位置。 另外，將實施前述雷射光線照射步驟後的半導體晶圓 10搬送至洗淨機構8進行洗淨步驟及乾燥步驟的期間，作動 0 10被加工物搬出搬入機構14，將接下來要加工的加工前之半 導體晶圓10從盒13搬出至暫置工作台15後，藉由第i搬送機 構16將被搬出至暫置工作台15的半導體晶圓1〇搬送至保護 膜形成裝置7。然後，針對被搬送至保護膜形成裝置7的接 下來要加工的半導體晶圓10實施前述保護膜被覆步驟。如 15此一來，實施保護膜被覆步驟後的半導體晶圓10會藉由第2 搬送機構Π從保護臈形成裝置7被搬送至夾頭工作台3，實 施前述雷射光線照射步驟。然後，實施雷射光線照射步驟 〇 後的半導體晶圓10會藉由第2搬送機構17被搬送至洗淨機 構8，實施前述洗淨步驟及乾燥步驟。 20 以上’根據圖示實施態樣說明了本發明，但本發明不 僅受限於實施態樣’可在本發明的主旨範圍下進行各種變 更。例如，别述實施態樣中舉例指出，保護膜檢測機構 係藉由可檢測樹脂液供應機構74所供應之液狀樹脂内所含 ' 有的氣味成分的氣味相^ 7 5 5檢測倾膜丨丨G是否被覆於 24 200927351 晶圓Η)之表面1()a，但亦可藉由例如，可檢測液狀樹脂内所 含有的揮發性有機化合物的檢測器檢測保護膜削是否被 覆於晶圓10之表面1 〇a。 【圖式簡單說明】 5 ❹ 10 15 罄 20 第1圖係依本發明所構成之雷射加卫機的立體圖。 第2圖係顯示切除部分裝設於第1圖所示之雷射加工裝 置的保護臈形成裝置的立體圖。 第3圖係顯不將第2圖所示之保護膜形成裝置的保持工 作台定位於被加工物搬入搬出位置之狀態的說明圖。 第4圖係顯示將第2圖所示之保護膜形成裝置的保持工 作台定位於作業位置之狀態的說明圖。 第5圖係裝設於第2圖所示之保護膜形成裝置的保護膜 檢測機構的構造方塊圖。 第6圖係顯示切除部分裝設於第1圖所示之雷射加工機 的洗淨機構的立體圖。 第7圖係顯示將第6圖所示之洗淨機構的旋轉作業台定 位於被加工物搬入搬出位置之狀態的說明圖。 第8圖係顯示將第6圖所示之洗淨機構的旋轉作業台定 位於作業位置之狀態的說明圖。 第9圖係作為藉由第1圖所示之雷射加工機加工之被加 工物的半導體晶圓的立體圖。 第川圖係顯示藉由第1圖所示之雷射加工機實施之保 護膜被覆步驟的說明圖。 第U圖係作為藉由保護膜形成步驟被覆保護膜之被加 25 200927351 工物的半導體晶圓的主要部分放大截面圖。 第12(a)、（b)圖係顯示藉由第1圖所示之雷射加工機進 行之雷射光線照射步驟的說明圖。 第13圖係作為藉由第12圖所示之雷射光線照射步驟進 5 行雷射加工之被加工物的半導體晶圓的主要部分放大截面 圖。 L 主要元件符號說明】 2 機殼 31 吸附夾頭支撐台 3 夾頭工作台 32 吸附失頭 4 雷射光線照射機構 33 爽钳 5 拍攝機構 41 套管 6 顯示機構 42 聚光器 7 保護膜形成裝置 70 箭號 8 洗淨機構 71 保持工作台機構 10 半導體晶圓 72 保持工作台收容機構 10a 表面 74 樹脂液供應機構 11 環形框 75 保護膜檢測機構 12 保護帶 76 控制機構 13 盒 77 警報器 13a 盒式載置部 81 旋轉工作台 14 被加工物搬出搬入機構 82 洗淨水承接機構 15 暫置工作台 84 洗淨水供應機構 16 第1搬送機構 85 空氣供應機構 17 第2搬送機構 100 液狀樹脂 200927351Output: 3W concentrating spot diameter: q 10 Processing feed speed: 100 mm/sec After performing the aforementioned laser light irradiation step along all the tracks of the semiconductor wafer 10, the squeezing head table 3 holding the semiconductor wafer 10 will Returning to the beginning of the attraction, the bit black of the semiconductor wafer 10 is held, and the attraction holding of the semiconductor wafer 10 is released here. Then, the semiconductor wafer 10 is sucked and held by the holding mechanism 171 of the second transfer mechanism 17 15 and transported to the rotary table 811 constituting the cleaning mechanism 8 by the rotation operation centered on the support mechanism 172. After the chuck 811a is attached, it is sucked and held by the chuck 13la. At this time, at this time, the washing water nozzle 841 and the air nozzle 851 are positioned at the standby position separated from above the rotary table 811 as shown in Figs. 6 and 7. 20 After the processed semiconductor wafer 10 is held on the rotary table 811 of the cleaning mechanism 8, a cleaning step is performed. That is, the rotary table 811 is positioned at the work position shown in Fig. 8, and the electric motor 842 of the washing water supply mechanism 86 is driven to position the discharge port of the nozzle portion 841a of the washing water supply nozzle 841 to be held at the rotation. The semiconductor wafer 1 on the stage 811 is above the 22 200927351 core. Then, the rotary table 811 is rotated at a rotation speed of, for example, 300 to 500 rpm, and the washing water composed of pure water and air is discharged from the discharge port of the nozzle portion 841a. In other words, the nozzle portion 841a is composed of a so-called two-fluid nozzle, which can supply about 0.2 MPa of pure water and can supply air of about 3 to M5 Mpa '5, and the pure water is sprayed by the air pressure to wash the semiconductor crystal. The surface 10a of the machined surface of the circle 1 inch. At this time, the electric motor 842 is driven to discharge the washing water discharged from the discharge port of the nozzle portion 841a of the washing water supply nozzle 841 to the center of the semiconductor wafer 10 held by the rotary table 811. Swing under the desired angular range of the position of the circumference. As a result, since the protective film 110 coated on the surface 1a of the half-conductor wafer 1 is formed of a water-soluble resin as described above, the protective film 11 can be easily washed away and can be removed. Debris 130 generated during laser processing. After the completion of the washing step, a drying step is then carried out. That is, the washing water supply nozzle 841 is positioned at the standby position 'and the discharge port of the nozzle portion 851a constituting the air nozzle 851 of the air supply device 15 is positioned at the center of the semiconductor wafer 10 held on the rotary table 811. Above the department. Then, the rotary table 811 is rotated at a rotation speed of, for example, 2 〇〇〇 to 3000 rpm, and air is ejected from the discharge port of the nozzle portion 851a for about 15 seconds. At this time, it is necessary to eject the air ejected from the discharge port of the nozzle portion 851a of the air nozzle 851 from the position where it is ejected to the center of the semiconductor wafer 10 held on the rotary table 811 to the position of the outer periphery. Swing under the angle range. As a result, the surface of the semiconductor wafer 10 can be dried. After the processing and drying of the semiconductor wafer 10 after the processing is completed as described above, the rotary rotary table 811 is stopped, and the air supply mechanism 85 23 200927351 air nozzle 851 is positioned at the standby position. Then, the rotary table 811 is positioned at the workpiece loading/unloading position shown in Fig. 7, and the suction holding of the semiconductor wafer 10 held on the rotary table 811 is released. Then, the processed semiconductor wafer 5 on the rotary table 811 is carried out to the temporary stage 15 by the first transfer mechanism 16. The processed semiconductor wafer 1 that has been carried out to the temporary stage 15 is stored in a predetermined position of the cassette 13 by the workpiece carry-in/out mechanism 丨4. In addition, the semiconductor wafer 10 after the laser light irradiation step is transferred to the cleaning mechanism 8 to perform the cleaning step and the drying step, and the workpiece loading/unloading mechanism 14 is operated by the workpiece 10, and the processing to be processed next is performed. After the semiconductor wafer 10 is carried out from the cassette 13 to the temporary stage 15, the semiconductor wafer 1 carried out to the temporary stage 15 is transported to the protective film forming apparatus 7 by the i-th transfer mechanism 16. Then, the protective film coating step is performed on the semiconductor wafer 10 to be processed which is transferred to the protective film forming device 7. As described above, the semiconductor wafer 10 subjected to the protective film coating step is transferred from the protective cymbal forming device 7 to the chuck table 3 by the second transfer mechanism ,, and the laser light irradiation step is performed. Then, the semiconductor wafer 10 subjected to the laser beam irradiation step is transferred to the cleaning mechanism 8 by the second transfer mechanism 17, and the cleaning step and the drying step are performed. 20 The present invention has been described in terms of the embodiments shown in the drawings, but the invention is not limited to the embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, in the embodiment, the protective film detecting mechanism detects the pour bleed by the odor phase of the odor component contained in the liquid resin supplied from the detectable resin liquid supply mechanism 74.丨G is overlaid on surface 1()a of 24 200927351 wafer Η), but it can also detect whether the protective film is coated on the wafer by, for example, a detector that can detect volatile organic compounds contained in the liquid resin. The surface of 10 is 1 〇a. BRIEF DESCRIPTION OF THE DRAWINGS 5 ❹ 10 15 罄 20 Fig. 1 is a perspective view of a laser eddy machine constructed in accordance with the present invention. Fig. 2 is a perspective view showing the protective cymbal forming apparatus of the laser processing apparatus shown in Fig. 1 in which the cut-away portion is attached. Fig. 3 is an explanatory view showing a state in which the holding table of the protective film forming apparatus shown in Fig. 2 is positioned at the position where the workpiece is carried in and out. Fig. 4 is an explanatory view showing a state in which the holding table of the protective film forming apparatus shown in Fig. 2 is positioned at the working position. Fig. 5 is a block diagram showing the structure of a protective film detecting mechanism of the protective film forming apparatus shown in Fig. 2. Fig. 6 is a perspective view showing the cleaning mechanism of the laser processing machine shown in Fig. 1 in which the cut-away portion is attached. Fig. 7 is an explanatory view showing a state in which the rotary table of the cleaning mechanism shown in Fig. 6 is placed at the workpiece loading/unloading position. Fig. 8 is an explanatory view showing a state in which the rotary table of the washing mechanism shown in Fig. 6 is positioned at the work position. Fig. 9 is a perspective view of a semiconductor wafer as a workpiece processed by the laser processing machine shown in Fig. 1. The Higashi diagram shows an explanatory view of the protective film covering step by the laser processing machine shown in Fig. 1. Fig. U is an enlarged cross-sectional view showing a main part of a semiconductor wafer to which a protective film is applied by a protective film forming step. Fig. 12 (a) and (b) are explanatory views showing the steps of irradiating the laser light by the laser processing machine shown in Fig. 1. Fig. 13 is an enlarged cross-sectional view showing the main part of a semiconductor wafer as a workpiece processed by laser processing by the laser beam irradiation step shown in Fig. 12. L Main component symbol description] 2 Case 31 Adsorption chuck support table 3 Chuck table 32 Adsorption loss head 4 Laser beam irradiation mechanism 33 Squeezing pliers 5 Shooting mechanism 41 Sleeve 6 Display mechanism 42 Condenser 7 Protective film formation Device 70 Arrow 8 Washing mechanism 71 Holding table mechanism 10 Semiconductor wafer 72 Holding table housing mechanism 10a Surface 74 Resin liquid supply mechanism 11 Ring frame 75 Protective film detecting mechanism 12 Protective tape 76 Control mechanism 13 Box 77 Alarm 13a Cartridge mounting unit 81 Rotary table 14 Workpiece carry-in/out mechanism 82 Washing water receiving mechanism 15 Temporary workbench 84 Washing water supply mechanism 16 First transport mechanism 85 Air supply mechanism 17 Second transport mechanism 100 Liquid Resin 200927351
101 跡道 723 覆蓋構件 102 元件 723a 覆蓋部 110 保護膜 741 樹脂'液供應喷嘴 120 雷射加工溝 741a 喷嘴部 130 碎屑 741b 支撐部 131 盒式工作台 742 電動馬達 161 保持機構 751 吸引筒 162 支纖構 751a 吸引部 171 保持機構 751b 支撐部 172 支擇機構 752 電動馬達 711 保持工作台 753 吸引管 711a 吸附炎頭 754 吸引機構 712 電動馬達 755 氣味感測器 712a 驅動軸 811 旋轉工作台 713 支撐機構 811a 吸附爽頭 713a 支撐腳 812 電動馬達 713b 氣壓缸 812a 驅動軸 714 爽钳 813 支撐機構 721 收容容器 813a 支撑腳 721a 外側壁 813b 氣壓缸 721b 底壁 814 夾钳 721c 内側壁 821 洗淨水承接容器 721d 821a 外側壁 722 支擇腳 821b 底壁 27 200927351 821c 内側壁 821d 孔 821e 排液口 822 支樓腳 823 覆蓋構件 823a 覆蓋部 824 排液管 841 洗淨水喷嘴 841a 喷嘴部 841b 支撐部 842 電動馬達 851 空氣喷嘴 851a 喷嘴部 851b 支撐部 P 聚光點 XI 箭號101 track 723 covering member 102 element 723a covering portion 110 protective film 741 resin 'liquid supply nozzle 120 laser processing groove 741a nozzle portion 130 debris 741b support portion 131 cassette table 742 electric motor 161 holding mechanism 751 suction tube 162 Fibrid 751a suction portion 171 holding mechanism 751b support portion 172 selection mechanism 752 electric motor 711 holding table 753 suction tube 711a adsorption head 754 suction mechanism 712 electric motor 755 odor sensor 712a drive shaft 811 rotary table 713 support mechanism 811a adsorption head 713a support foot 812 electric motor 713b pneumatic cylinder 812a drive shaft 714 cool clamp 813 support mechanism 721 storage container 813a support foot 721a outer side wall 813b pneumatic cylinder 721b bottom wall 814 clamp 721c inner side wall 821 washing water receiving container 721d 821a outer side wall 722 support foot 821b bottom wall 27 200927351 821c inner side wall 821d hole 821e drain port 822 branch foot 823 cover member 823a cover portion 824 drain pipe 841 wash water nozzle 841a nozzle portion 841b support portion 842 electric motor 851 Air nozzle 851a nozzle Supporting portion 851b converging point P arrow XI