JP6622610B2 - Grinding equipment - Google Patents

Grinding equipment Download PDF

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JP6622610B2
JP6622610B2 JP2016022554A JP2016022554A JP6622610B2 JP 6622610 B2 JP6622610 B2 JP 6622610B2 JP 2016022554 A JP2016022554 A JP 2016022554A JP 2016022554 A JP2016022554 A JP 2016022554A JP 6622610 B2 JP6622610 B2 JP 6622610B2
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grinding
wafer
holding
cleaning
crack
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JP2017140663A (en
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真司 吉田
真司 吉田
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Disco Corp
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Disco Corp
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Priority to JP2016022554A priority Critical patent/JP6622610B2/en
Priority to TW105143901A priority patent/TWI695424B/en
Priority to CN201710057507.4A priority patent/CN107042433B/en
Priority to KR1020170016142A priority patent/KR102513203B1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0023Other grinding machines or devices grinding machines with a plurality of working posts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0069Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0076Other grinding machines or devices grinding machines comprising two or more grinding tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • B24B37/345Feeding, loading or unloading work specially adapted to lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06Dust extraction equipment on grinding or polishing machines
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning In General (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Description

本発明は、ウエーハを研削する研削装置に関する。   The present invention relates to a grinding apparatus for grinding a wafer.

ポーラス状に形成された保持テーブルにウエーハを保持し、ウエーハの被研削面に研削砥石を接触させて押圧して当該被研削面を研削する研削装置においては、保持テーブルの保持面と研削砥石の研削面とを平行にすることにより、研削後のウエーハの厚さ精度向上を図っている。   In a grinding apparatus that holds a wafer on a holding table formed in a porous shape and presses a grinding wheel in contact with the surface to be ground of the wafer to press and grind the surface to be ground, the holding surface of the holding table and the grinding wheel By making the grinding surface parallel, the thickness accuracy of the wafer after grinding is improved.

しかし、研削により生じた研削屑が保持面に付着し、その状態でウエーハを保持して研削砥石を押圧すると、ウエーハにクラックが発生するという問題がある。そこで、研削装置では、保持テーブルの保持面を洗浄する洗浄機構を設け、1枚のウエーハの研削が終了し保持テーブルから離間したタイミングで、すなわち1枚のウエーハを研削するごとに、保持面を洗浄し、研削屑が保持面に付着した状態でウエーハの研削が行われるのを防止している。洗浄機構としては、例えばブラシやストーン(例えば、特許文献1参照)、保持面に流体を噴出する流体洗浄機構(例えば、特許文献2参照)などがある。   However, there is a problem that cracks occur in the wafer when grinding waste generated by grinding adheres to the holding surface and the wafer is held in this state and the grinding wheel is pressed. Therefore, the grinding apparatus is provided with a cleaning mechanism for cleaning the holding surface of the holding table, and the holding surface is removed at the timing when the grinding of one wafer is finished and separated from the holding table, that is, every time one wafer is ground. Washing is performed to prevent the wafer from being ground in a state where the grinding scraps adhere to the holding surface. Examples of the cleaning mechanism include a brush and a stone (for example, see Patent Document 1), a fluid cleaning mechanism for ejecting a fluid onto a holding surface (for example, see Patent Document 2), and the like.

特許第4079289号公報Japanese Patent No. 4079289 特許第5538971号公報Japanese Patent No. 5538971

しかし、保持面に流体を噴出する流体洗浄機構では、ポーラス状に形成された保持テーブルの保持面に入り込んだ研削屑を排出することが困難である。一方、ブラシやストーンによる保持面の洗浄を行うと、保持面の形状が変化するため、保持面と研削砥石の研削面との平行度の精度が低下し、ウエーハの研削後の仕上がり厚さ精度が低下するという問題がある。特に、1枚のウエーハを研削するごとに保持面を洗浄すると、保持面と研削砥石の研削面との平行度の精度が低下しやすく、また、生産性を低下させる要因にもなっている。   However, in the fluid cleaning mechanism that ejects fluid to the holding surface, it is difficult to discharge grinding waste that has entered the holding surface of the holding table formed in a porous shape. On the other hand, when the holding surface is cleaned with a brush or stone, the shape of the holding surface changes, so the accuracy of the parallelism between the holding surface and the grinding surface of the grinding wheel decreases, and the finished thickness accuracy after grinding the wafer There is a problem that decreases. In particular, if the holding surface is washed every time one wafer is ground, the accuracy of the parallelism between the holding surface and the grinding surface of the grinding wheel tends to be lowered, and this is also a factor of reducing productivity.

本発明は、このような問題にかんがみなされたもので、保持面上の研削屑を確実かつ効率よく除去するとともに、保持テーブルの保持面の形状が変化してウエーハの研削後の仕上がり厚さ精度が低下するのを防ぐことを課題とする。   The present invention has been considered in view of such problems, and it is possible to reliably and efficiently remove grinding dust on the holding surface, and to change the shape of the holding surface of the holding table to obtain a finished thickness accuracy after grinding the wafer. It is an object to prevent the decrease in the temperature.

本発明は、ポーラス板を備えウエーハを保持する保持面を有する保持テーブルと、該保持テーブルの該保持面で保持されるウエーハを砥石の研削面で研削する研削手段と、該保持面を洗浄する洗浄手段と、を備える研削装置であって、該洗浄手段は、該保持面に接触して該保持面より突出した研削屑を削り取る板状の洗浄砥石と、該洗浄砥石を該保持面に押圧する押圧手段と、該保持テーブルを該保持面の中心を軸に回転させる保持テーブル回転手段とを備え、該研削手段によって研削され該保持テーブルに保持されるウエーハの被研削面側からウエーハに発生したクラックを検出するクラック検出手段と、該クラック検出手段がウエーハに発生したクラックを検出したときに、該洗浄手段に該保持面を洗浄させ該保持面と該研削面との平行度を維持する制御部と、を備える。
この研削装置は、前記クラック検出手段が検出したクラックの位置を記憶する記憶部を備え、前記制御部は、該記憶部が記憶するクラックの位置に相当する該保持面の位置を該洗浄手段に洗浄させることが好ましい。
The present invention provides a holding table having a holding surface that includes a porous plate and holds a wafer, a grinding means for grinding a wafer held by the holding surface of the holding table with a grinding surface of a grindstone, and cleaning the holding surface A grinding device comprising: a cleaning means, wherein the cleaning means contacts the holding surface and scrapes off grinding waste protruding from the holding surface; and presses the cleaning grindstone against the holding surface. And a holding table rotating means for rotating the holding table about the center of the holding surface, and is generated on the wafer from the surface to be ground of the wafer ground by the grinding means and held on the holding table. A crack detecting means for detecting the crack, and when the crack detecting means detects a crack generated on the wafer, the cleaning surface is cleaned by the cleaning means so that the holding surface is parallel to the ground surface. And a control unit to maintain.
The grinding apparatus includes a storage unit that stores the position of the crack detected by the crack detection unit, and the control unit sets the position of the holding surface corresponding to the position of the crack stored in the storage unit to the cleaning unit. It is preferable to wash.

本発明では、洗浄砥石を保持面に接触させ押圧して研削屑を削り取る洗浄手段と、ウエーハの被研削面に生じたクラックを検出するクラック検出手段と、クラックを検出したときに洗浄手段に保持面を洗浄させる制御部とを備えるため、ウエーハの被研削面にクラックが検出されたときのみ保持面に入り込んだ研削屑を排出することができる。したがって、保持面上の研削屑を確実かつ効率よく除去することができるとともに、保持面の形状が変化してウエーハの研削後の仕上がり厚さ精度が低下するのを防ぐことができる。
また、ウエーハに発生したクラックの位置を記憶する記憶部を備え、制御部が、記憶部が記憶するクラックの位置に相当する保持面の位置を洗浄手段に洗浄させることで、保持面のうち研削屑を付着している場所のみを洗浄することができるため、洗浄効率がさらに高くなり、生産性がより向上する。
In the present invention, the cleaning means that contacts and presses the cleaning grindstone with the holding surface to scrape the grinding scraps, the crack detection means that detects cracks generated on the surface to be ground of the wafer, and the cleaning means that holds the crack when it is detected. Since the control unit for cleaning the surface is provided, grinding scraps that have entered the holding surface can be discharged only when a crack is detected on the surface to be ground of the wafer. Therefore, it is possible to reliably and efficiently remove grinding scraps on the holding surface, and it is possible to prevent the shape of the holding surface from changing and the finished thickness accuracy after grinding of the wafer from being lowered.
In addition, a storage unit that stores the position of the crack generated in the wafer is provided, and the control unit causes the cleaning unit to clean the position of the holding surface corresponding to the position of the crack stored in the storage unit, thereby grinding the holding surface. Since only the place where the debris is attached can be cleaned, the cleaning efficiency is further increased and the productivity is further improved.

研削装置の例を示す斜視図である。It is a perspective view which shows the example of a grinding device. 保持テーブル及び洗浄手段を示す断面図である。It is sectional drawing which shows a holding table and a washing | cleaning means. クラック検出手段の例を示す断面図である。It is sectional drawing which shows the example of a crack detection means. ウエーハの例を示す斜視図である。It is a perspective view which shows the example of a wafer. 保持テーブルの例を示す平面図である。It is a top view which shows the example of a holding table. ウエーハ上で検出されたクラックの位置を示す平面図である。It is a top view which shows the position of the crack detected on the wafer. 保持テーブルの保持面に研削屑が付着している状態を示す断面図である。It is sectional drawing which shows the state in which the grinding dust has adhered to the holding surface of a holding table. 洗浄手段によって研削屑を除去する状態を示す断面図である。It is sectional drawing which shows the state from which grinding waste is removed by the washing | cleaning means.

図1に示す研削装置1は、保持テーブル2に保持されたウエーハWに対して研削手段3a、3bが研削加工を施す装置である。   A grinding apparatus 1 shown in FIG. 1 is an apparatus in which grinding means 3 a and 3 b perform grinding on a wafer W held on a holding table 2.

研削装置1の前部側には、研削前のウエーハWを収容するカセット40aと研削後のウエーハWを収容するカセット40bとがそれぞれ載置されるカセット載置領域4a、4bが設けられている。   On the front side of the grinding apparatus 1, cassette placement regions 4 a and 4 b are provided on which a cassette 40 a for housing the wafer W before grinding and a cassette 40 b for housing the wafer W after grinding are respectively placed. .

カセット載置領域4a、4bの近傍には、カセット40a、40bに対するウエーハWの搬出入を行う搬出入手段5が配設されている。搬出入手段5によってカセット40aから搬出されたウエーハWは、位置合わせテーブル50に載置され、ここでウエーハWの中心が一定の位置に位置合わせされる。位置合わせテーブル50には回転手段51を備えており、位置合わせテーブル50に載置されたウエーハWを回転させることができる。また、位置合わせテーブル50の側方には、結晶方位を示すマークとしてウエーハWの周縁部に形成されたノッチNを検知する検知部52を備えている。検知部52は、例えば、カメラ、透過型センサまたは反射型センサである。   A loading / unloading means 5 for loading / unloading the wafer W to / from the cassettes 40a, 40b is disposed in the vicinity of the cassette placement areas 4a, 4b. The wafer W carried out from the cassette 40a by the carry-in / out means 5 is placed on the alignment table 50, where the center of the wafer W is aligned at a fixed position. The alignment table 50 is provided with a rotating means 51, and the wafer W placed on the alignment table 50 can be rotated. In addition, a side of the alignment table 50 is provided with a detection unit 52 that detects a notch N formed at the peripheral edge of the wafer W as a mark indicating a crystal orientation. The detection unit 52 is, for example, a camera, a transmissive sensor, or a reflective sensor.

位置合わせテーブル50の近傍には第一の搬送手段6aが配設されており、位置合わせテーブル50において位置合わせされたウエーハWは、第一の搬送手段6aによって3つの保持テーブル2のいずれかに搬送される。3つの保持テーブル2は、それぞれが自転可能であるとともに、ターンテーブル20の回転に伴って公転する。   A first transport unit 6a is disposed in the vicinity of the alignment table 50, and the wafer W aligned in the alignment table 50 is placed on one of the three holding tables 2 by the first transport unit 6a. Be transported. Each of the three holding tables 2 can rotate and revolves as the turntable 20 rotates.

ターンテーブル20の回転に伴う保持テーブル2の公転移動経路の上方には、研削手段3a、3bが配設されている。研削手段3a、3bは、研削砥石34の種類を除き同様に構成されるため、共通の符号を付して説明する。研削手段3a、3bは、鉛直方向の軸心を有する回転軸30の下端にホイールマウント31を介して研削ホイール32が装着され、回転軸30の上端に連結されたモータ33によって回転軸30が回転駆動されることにより研削ホイール32が回転する構成となっており、研削ホイール32の下部には研削砥石34が固着されている。研削砥石34の下面は、ウエーハWを研削する研削面となっている。研削手段3aを構成する研削砥石34は、例えば粗研削砥石であり、研削手段3bを構成する研削砥石34は、例えば仕上げ研削砥石である。   Grinding means 3a and 3b are disposed above the revolution movement path of the holding table 2 as the turntable 20 rotates. Since the grinding means 3a and 3b are configured similarly except for the type of the grinding wheel 34, they will be described with common reference numerals. In the grinding means 3a and 3b, a grinding wheel 32 is attached to a lower end of a rotating shaft 30 having a vertical axis through a wheel mount 31, and the rotating shaft 30 is rotated by a motor 33 connected to the upper end of the rotating shaft 30. When driven, the grinding wheel 32 rotates. A grinding wheel 34 is fixed to the lower part of the grinding wheel 32. The lower surface of the grinding wheel 34 is a grinding surface for grinding the wafer W. The grinding wheel 34 that constitutes the grinding means 3a is, for example, a rough grinding wheel, and the grinding wheel 34 that constitutes the grinding means 3b is, for example, a finish grinding wheel.

研削手段3a、3bは、鉛直方向にのびるガイドレール35に摺接する昇降板36に固定されており、モータ37によって駆動されて昇降板36が昇降するのにともない、研削手段3a、3bも昇降する構成となっている。   The grinding means 3a and 3b are fixed to an elevating plate 36 that is in sliding contact with a guide rail 35 extending in the vertical direction. As the elevating plate 36 is raised and lowered by being driven by a motor 37, the grinding means 3a and 3b are also raised and lowered. It has a configuration.

カセット載置領域4bに隣接する位置には、ウエーハWを洗浄するウエーハ洗浄手段7が配設されている。ウエーハ洗浄手段7は、ウエーハWを保持して回転するスピンナーテーブル70を備えている。また、ウエーハ洗浄手段7の近傍には、研削後のウエーハWを保持テーブル2からウエーハ洗浄手段7に搬送する第二の搬送手段6bが配設されている。   Wafer cleaning means 7 for cleaning the wafer W is disposed at a position adjacent to the cassette mounting area 4b. The wafer cleaning means 7 includes a spinner table 70 that holds and rotates the wafer W. Further, in the vicinity of the wafer cleaning means 7, a second transport means 6 b for transporting the ground wafer W from the holding table 2 to the wafer cleaning means 7 is disposed.

保持テーブル2の移動経路の上方には、保持テーブル2の保持面2aを洗浄する洗浄手段8が配設されている。この洗浄手段8は、図2に示すように、鉛直方向の軸心を有する回転軸80と、回転軸80を回転可能に支持するハウジング81と、回転軸80の下端に配設された洗浄砥石82と、ハウジング81を昇降させる昇降手段83と、保持テーブル2を保持面2aの中心を軸に回転させる保持テーブル回転手段84とを備えている。   Cleaning means 8 for cleaning the holding surface 2 a of the holding table 2 is disposed above the movement path of the holding table 2. As shown in FIG. 2, the cleaning means 8 includes a rotary shaft 80 having a vertical axis, a housing 81 that rotatably supports the rotary shaft 80, and a cleaning grindstone disposed at the lower end of the rotary shaft 80. 82, lifting / lowering means 83 for moving the housing 81 up and down, and holding table rotating means 84 for rotating the holding table 2 around the center of the holding surface 2a.

洗浄砥石82は、例えば、レジンボンド砥石、樹脂材又はセラミックス材を板状に形成したものである。昇降手段83は、ハウジング81に摺接するレール830と、例えばハウジング81の内部に設けられるリニアモータ等とを備え、ハウジング81を昇降させることができる。保持テーブル回転手段84は、モータ840と、エンコーダ841と、モータ840によって駆動されて回転する軸842と、軸842の先端に形成されたプーリ843と、プーリ843に巻回されたベルト844と、ベルト844が巻回された従動プーリ845とを備えている。   The cleaning grindstone 82 is formed, for example, from a resin bond grindstone, a resin material, or a ceramic material in a plate shape. The elevating means 83 includes a rail 830 that is in sliding contact with the housing 81 and, for example, a linear motor provided inside the housing 81, and can elevate and lower the housing 81. The holding table rotating means 84 includes a motor 840, an encoder 841, a shaft 842 driven and rotated by the motor 840, a pulley 843 formed at the tip of the shaft 842, a belt 844 wound around the pulley 843, And a driven pulley 845 around which a belt 844 is wound.

それぞれの保持テーブル2は、ポーラス板21と、ポーラス板21を支持する枠体22と、枠体22が取り付けられるベース23を備えている。枠体22及びベース23には、ポーラス板21に連通する吸引路24が形成されている。この吸引路24は、吸引源25に連通している。枠体22は、従動プーリ845に連結されており、モータ840がベルト844を介して従動プーリ845を回転させることにより保持テーブル2を回転させることができる。   Each holding table 2 includes a porous plate 21, a frame body 22 that supports the porous plate 21, and a base 23 to which the frame body 22 is attached. A suction path 24 that communicates with the porous plate 21 is formed in the frame body 22 and the base 23. The suction path 24 communicates with the suction source 25. The frame 22 is connected to a driven pulley 845, and the holding table 2 can be rotated by the motor 840 rotating the driven pulley 845 via the belt 844.

ハウジング81の側部には、クラック検出手段90が配設されている。クラック検出手段90は、例えば図3に示すように、鉛直方向の光軸を有するカメラ900と、カメラ900の周囲に位置しウエーハWを照らすリング照明901とを備えている。リング照明901は、鉛直方向に移動可能となっている。なお、リング照明に代えて、カメラ900の光軸に沿って光を落とし、その光の反射光でレンズが像を結ぶ落射照明を用いてもよい。また、クラック検出手段90として、例えば、レーザやLEDを用いた光量センサを用いてもよい。   On the side of the housing 81, crack detecting means 90 is disposed. For example, as shown in FIG. 3, the crack detection means 90 includes a camera 900 having a vertical optical axis and a ring illumination 901 that is positioned around the camera 900 and illuminates the wafer W. The ring illumination 901 is movable in the vertical direction. Instead of ring illumination, epi-illumination may be used in which light is dropped along the optical axis of the camera 900 and the lens connects an image with the reflected light of the light. Moreover, as the crack detection means 90, you may use the light quantity sensor using a laser or LED, for example.

クラック検出手段90のカメラ900は、図2に示した制御部91に接続されており、クラック検出手段90が取得した画像情報が制御部91に転送される。また、制御部91には記憶部92が接続されており、必要に応じて画像情報を記憶部92に記憶させることができる。制御部91は、研削装置1の各部位の位置及び動きをX−Y−Z座標により管理しており、各部位を所望の位置に移動させることができる。   The camera 900 of the crack detection unit 90 is connected to the control unit 91 shown in FIG. 2, and image information acquired by the crack detection unit 90 is transferred to the control unit 91. In addition, a storage unit 92 is connected to the control unit 91, and image information can be stored in the storage unit 92 as necessary. The control unit 91 manages the position and movement of each part of the grinding apparatus 1 using XYZ coordinates, and can move each part to a desired position.

図1に示すように、ターンテーブル20を跨ぐようにしてガイドレール85が配設されており、昇降手段83は、例えば内部にリニアモータ等を備え、ガイドレール85に沿って水平移動可能となっている。したがって、洗浄砥石82は、水平方向及び鉛直方向に移動可能である。昇降手段83は、洗浄砥石82を保持面2aに押圧する押圧手段として機能する。   As shown in FIG. 1, a guide rail 85 is disposed so as to straddle the turntable 20, and the elevating means 83 includes, for example, a linear motor or the like, and can move horizontally along the guide rail 85. ing. Therefore, the cleaning grindstone 82 is movable in the horizontal direction and the vertical direction. The lifting / lowering means 83 functions as a pressing means for pressing the cleaning grindstone 82 against the holding surface 2a.

以上のように構成される研削装置1を用いて、図1に示したウエーハWの裏面Wbを研削する場合は、ウエーハWの表面Waに保護テープTが貼着され、ウエーハWがカセット40aに収容される。そして、搬出入手段5によってウエーハをカセット40aから搬出し、位置合わせテーブル50に載置する。位置合わせテーブル50においてウエーハWの中心位置が一定の位置に位置合わせされた後、ウエーハWは、第一の搬送手段6aによって保持テーブル2に搬送される。このとき、第一の搬送手段6aは、保持テーブル2の中心とウエーハWの中心とが合致するように、ウエーハWを保持テーブル2に搬送する。   When grinding the back surface Wb of the wafer W shown in FIG. 1 using the grinding apparatus 1 configured as described above, the protective tape T is adhered to the front surface Wa of the wafer W, and the wafer W is attached to the cassette 40a. Be contained. Then, the wafer is unloaded from the cassette 40 a by the loading / unloading means 5 and placed on the alignment table 50. After the center position of the wafer W is aligned at a fixed position on the alignment table 50, the wafer W is transported to the holding table 2 by the first transport means 6a. At this time, the first transport means 6a transports the wafer W to the holding table 2 so that the center of the holding table 2 and the center of the wafer W coincide.

図4に示すように、ウエーハWの周縁部には、結晶方位を示すマークとしてノッチNが形成されており、図5に示すように、保持テーブル2には、ウエーハWが載置されたときにノッチNと位置合わせするためのノッチ合わせ部26が形成されている。ノッチ合わせ部26は、ポーラス板21の外周部を覆うバリア27に形成されている。また、枠体22には、枠体22を図2に示したベース23に固定するためのネジが挿通されるねじ穴28が複数形成されている。保持テーブル2においては、ウエーハWのノッチNと保持テーブル2のノッチ合わせ部26とを位置合わせし、保護テープT側が保持面2aに載置されて保持され、裏面Wbが上方に露出した状態となる。なお、回転手段51がウエーハWを回転させ検知部52がノッチNを検知した位置でウエーハWの回転を止め、第一の搬送手段6aが、その位置に位置するウエーハを保持して保持テーブル2に搬送すると、保持テーブル2のノッチ合わせ部26にノッチNを一致させ搬送することができる。つまり、第一の搬送手段6aがウエーハを保持したときのウエーハWのノッチNの位置は、位置合わせテーブル50からウエーハWを保持し搬出する時に決められていて、保持テーブル2を回転させ第一の搬送手段6aが保持したウエーハWのノッチNの位置と保持テーブル2のノッチ合わせ部26とが一致するように位置あわせをする。
なお、位置合わせテーブル50から第一の搬送手段6aがウエーハを保持し搬出するときのウエーハWの位置は、検知部52がノッチNを検知した位置としたが、検知部52がノッチNを検知して所定角度回転させた位置でもよい。
As shown in FIG. 4, a notch N is formed as a mark indicating the crystal orientation at the peripheral edge of the wafer W. When the wafer W is placed on the holding table 2 as shown in FIG. A notch alignment portion 26 for aligning with the notch N is formed. The notch alignment portion 26 is formed in a barrier 27 that covers the outer peripheral portion of the porous plate 21. The frame body 22 is formed with a plurality of screw holes 28 through which screws for fixing the frame body 22 to the base 23 shown in FIG. 2 are inserted. In the holding table 2, the notch N of the wafer W and the notch alignment portion 26 of the holding table 2 are aligned, the protective tape T side is placed and held on the holding surface 2a, and the back surface Wb is exposed upward. Become. The rotating means 51 rotates the wafer W and stops the rotation of the wafer W at the position where the detection unit 52 detects the notch N, and the first transport means 6a holds the wafer located at that position and holds the holding table 2. , The notch N can be made to coincide with the notch aligning portion 26 of the holding table 2 and conveyed. That is, the position of the notch N of the wafer W when the first transport means 6a holds the wafer is determined when the wafer W is held and carried out from the alignment table 50, and the holding table 2 is rotated to rotate the first. Alignment is performed so that the position of the notch N of the wafer W held by the transport means 6a coincides with the notch alignment portion 26 of the holding table 2.
The position of the wafer W when the first conveying means 6a holds and unloads the wafer from the alignment table 50 is the position where the detection unit 52 has detected the notch N. However, the detection unit 52 has detected the notch N. Then, it may be a position rotated by a predetermined angle.

次に、ターンテーブル20の反時計回りの回転によってウエーハWが研削手段3aの直下に位置付けられる。そして、保持テーブル2aが回転すると共に、研削ホイール32の回転に伴い研削砥石34が回転しながら研削手段3aが下降し、回転する研削砥石34がウエーハWの裏面Wbに接触して研削がなされる。ここでは例えば粗研削が行われる。   Next, the wafer W is positioned directly below the grinding means 3 a by the counterclockwise rotation of the turntable 20. As the holding table 2a rotates, the grinding means 3a descends while the grinding wheel 34 rotates as the grinding wheel 32 rotates, and the rotating grinding wheel 34 contacts the back surface Wb of the wafer W for grinding. . Here, for example, rough grinding is performed.

粗研削が終了した後は、ターンテーブル20の回転によりウエーハWが研削手段3bの直下に位置付けられる。そして、保持テーブル2が反時計回りに回転すると共に、研削ホイール32の回転に伴い研削砥石34が回転しながら研削手段3bが下降し、回転する研削砥石34がウエーハWの裏面Wbに接触して研削がなされる。ここでは例えば仕上げ研削が行われる。   After the rough grinding is finished, the wafer W is positioned directly below the grinding means 3b by the rotation of the turntable 20. Then, the holding table 2 rotates counterclockwise, and the grinding means 3b descends while the grinding wheel 34 rotates as the grinding wheel 32 rotates, and the rotating grinding wheel 34 contacts the back surface Wb of the wafer W. Grinding is done. Here, for example, finish grinding is performed.

このようにしてウエーハの研削を行うと、保持テーブル2の保持面2aとウエーハWに貼着された保護テープTとの間に研削屑が入り込み、その研削屑が保持面2aに付着することがある。その付着屑が保持面2a上に残ったままの状態で、ウエーハWの裏面Wbが研削されると、ウエーハWにクラックが発生するという問題がある。   When the wafer is ground in this way, grinding waste may enter between the holding surface 2a of the holding table 2 and the protective tape T attached to the wafer W, and the grinding waste may adhere to the holding surface 2a. is there. When the back surface Wb of the wafer W is ground in a state where the attached scrap remains on the holding surface 2a, there is a problem that the wafer W is cracked.

そこで、仕上げ研削終了後は、ターンテーブル20の反時計回りの回転によって、保持テーブル2に保持された研削後のウエーハWをクラック検出手段90の下方に移動させる。そして、クラック検出手段90によってウエーハWの被研削面である裏面Wbの全面を撮像し、取得した画像を制御部91に転送する。制御部91では、画像を構成する画素情報によって、ウエーハWにクラックが発生しているか否かを検査する。   Therefore, after finishing grinding, the ground wafer W held on the holding table 2 is moved below the crack detecting means 90 by the counterclockwise rotation of the turntable 20. Then, the entire surface of the back surface Wb that is the surface to be ground of the wafer W is imaged by the crack detection means 90, and the acquired image is transferred to the control unit 91. The control unit 91 inspects whether or not a crack has occurred in the wafer W based on pixel information constituting the image.

制御部91がクラックを検出しなかった場合は、第二の搬送装置6bがウエーハWを保持し、ウエーハ洗浄手段7のスピンナーテーブル70に搬送する。そして、スピンナーテーブル70の回転とともに高圧水がウエーハWに対して噴射されて洗浄が行われ、さらにスピンナーテーブル70の回転とともに高圧エアーがウエーハWに対して噴射されて乾燥が行われる。そしてその後、搬出入手段5によって、洗浄及び乾燥が行われたウエーハWがカセット40bに搬送され収容される。   If the controller 91 does not detect a crack, the second transfer device 6b holds the wafer W and transfers it to the spinner table 70 of the wafer cleaning means 7. Then, high-pressure water is jetted onto the wafer W along with the rotation of the spinner table 70 to perform cleaning, and further, high-pressure air is jetted onto the wafer W along with the rotation of the spinner table 70 to perform drying. After that, the wafer W that has been cleaned and dried by the loading / unloading means 5 is transported and accommodated in the cassette 40b.

一方、制御部91がクラックCを検出した場合は、クラックCの位置を、ウエーハWの中心WO及びノッチNとの位置関係により特定する。具体的処理は、以下のとおりである。   On the other hand, when the control unit 91 detects the crack C, the position of the crack C is specified by the positional relationship with the center WO and the notch N of the wafer W. The specific process is as follows.

画像中における図6に示すウエーハWの中心座標WOを求める場合は、保持テーブル2を回転させながら、ウエーハWの周縁の3箇所を撮像してそれぞれについての画像を取得する。そして、それぞれの画像において、画素値があるしきい値以上変化した部分をエッジとして認識する画像処理を行うことによって、3点のX−Y座標を求める。   When obtaining the center coordinates WO of the wafer W shown in FIG. 6 in the image, while rotating the holding table 2, three positions on the periphery of the wafer W are imaged and images for each are acquired. Then, in each image, image processing for recognizing a portion where the pixel value has changed by a certain threshold value or more as an edge is performed to obtain three XY coordinates.

ウエーハWの中心WOの座標を(XO,YO)とし、ウエーハWの周縁の3点の座標をそれぞれ(x1,y1)、(x2,y2)、(x3,y3)とすると、中心WOの座標(XO,YO)は、制御手段91によって以下の式(1)により求められる。   If the coordinates of the center WO of the wafer W are (XO, YO) and the coordinates of the three points on the periphery of the wafer W are (x1, y1), (x2, y2) and (x3, y3), respectively, the coordinates of the center WO (XO, YO) is obtained by the following formula (1) by the control means 91.

Figure 0006622610
Figure 0006622610

図6の例では、ノッチNの座標(XN,YN)は、例えば、ウエーハWを円形と仮定した場合の円弧と、中心WOとノッチNとを結ぶ線の延長線との交点としている。また、以下の式(2)により、ウエーハWの半径Rを求め、中心WOからノッチNの方向に向けて半径Rだけ変位した位置をノッチNの座標とすることもできる。   In the example of FIG. 6, the coordinates (XN, YN) of the notch N are, for example, the intersection of an arc when the wafer W is assumed to be circular and an extension of a line connecting the center WO and the notch N. Further, the radius R of the wafer W can be obtained by the following equation (2), and the position displaced by the radius R from the center WO in the direction of the notch N can be used as the coordinates of the notch N.

Figure 0006622610
Figure 0006622610

このようにして、ウエーハの中心WOの座標(XO,YO)と、ノッチNの座標(XN,YN)とが求まると、これらとクラックCとの間にある画素数により、クラックCの位置を、ウエーハWの中心WOからのX軸方向の変位XC及びノッチNからのY軸方向の変位YCとして求めることができる。こうして求めたクラックCの位置情報は、記憶部92に記憶される。   Thus, when the coordinates (XO, YO) of the wafer center WO and the coordinates (XN, YN) of the notch N are obtained, the position of the crack C is determined by the number of pixels between these and the crack C. The displacement XC in the X-axis direction from the center WO of the wafer W and the displacement YC in the Y-axis direction from the notch N can be obtained. The position information of the crack C thus obtained is stored in the storage unit 92.

クラックCは、保持面2aにおいて保持されていた位置で形成されたものとみなすことができる。すなわち、例えば図7に示すように、保持面2aの上に研削屑100が付着している場合は、保持されたウエーハWに対して研削砥石34による押圧力が加えられることにより、ウエーハWのうち研削屑100の上方に位置する部分でクラックCが生じたと考えられる。したがって、制御部91が認識する保持テーブル2の回転中心からX軸方向にXCだけ離間するとともに図5に示したノッチ合わせ部26からY方向にYCだけ離間した位置に、研削屑が付着しているとみなすことができる。   The crack C can be regarded as being formed at the position held on the holding surface 2a. That is, for example, as shown in FIG. 7, when the grinding waste 100 is attached on the holding surface 2 a, the pressing force of the grinding wheel 34 is applied to the held wafer W, so that the wafer W Of these, it is considered that the crack C occurred in the portion located above the grinding scrap 100. Accordingly, the grinding dust adheres to the position separated by XC in the X-axis direction from the rotation center of the holding table 2 recognized by the control unit 91 and at a position separated by YC in the Y direction from the notch alignment unit 26 shown in FIG. Can be considered.

そこで、制御部91による制御によって昇降手段83がガイドレール85に沿って水平移動し、研削屑が付着している位置の上方に洗浄砥石82を位置付ける。そして、図8に示すように、保持テーブル回転手段84が保持テーブル2を回転させるとともに、洗浄砥石82を回転させながら昇降手段83が洗浄砥石82を下降させ、保持面2aに洗浄砥石82を押圧する。そうすると、保持面2aから上方に突出した研削屑が削り取られ、保持面2aが、研削砥石34の研削面(下面)と平行になる。   Then, the raising / lowering means 83 moves horizontally along the guide rail 85 by control by the control part 91, and positions the washing grindstone 82 above the position where the grinding | polishing waste has adhered. Then, as shown in FIG. 8, the holding table rotating means 84 rotates the holding table 2, and the elevating means 83 lowers the cleaning grindstone 82 while rotating the cleaning grindstone 82, and presses the cleaning grindstone 82 against the holding surface 2a. To do. Then, the grinding waste protruding upward from the holding surface 2a is scraped off, and the holding surface 2a becomes parallel to the grinding surface (lower surface) of the grinding wheel 34.

このようにして、制御部91は、記憶部92が記憶するクラックの位置に相当する保持面2aの位置を洗浄手段8に洗浄させる。保持面2aの全面を洗浄する必要がないため、効率的である。また、必要最低限の洗浄のみで済むため、保持面2aと研削砥石34の研削面との平行度を維持し、保持面2aの形状が変化してウエーハWの研削後の仕上がり厚さ精度が低下するのを防ぐことができる。   In this manner, the control unit 91 causes the cleaning unit 8 to clean the position of the holding surface 2a corresponding to the position of the crack stored in the storage unit 92. This is efficient because it is not necessary to clean the entire holding surface 2a. Further, since only the minimum necessary cleaning is required, the parallelism between the holding surface 2a and the grinding surface of the grinding wheel 34 is maintained, the shape of the holding surface 2a is changed, and the finished thickness accuracy of the wafer W after grinding is improved. It can be prevented from lowering.

なお、本実施形態の洗浄砥石82は、保持面2aの半径程度の直径を有する大きさに形成しているが、上記のように保持面2a上における研削屑100の付着位置を特定して研削屑を除去する場合は、洗浄砥石82よりも小さい洗浄砥石を用いてもよい。   In addition, although the cleaning grindstone 82 of this embodiment is formed in the magnitude | size which has a diameter about the radius of the holding surface 2a, it specifies the adhesion position of the grinding waste 100 on the holding surface 2a as mentioned above, and grinds. When removing debris, a cleaning grindstone smaller than the cleaning grindstone 82 may be used.

また、本実施形態の保持テーブル2がノッチ合わせ部26を備え、ノッチ合わせ部26とウエーハWに形成されているノッチNとの位置を合わせることで、クラックCとノッチNとの位置関係に基づき保持面2a上における研削屑100の位置を特定することとしたが、ウエーハにノッチが形成されておらず、オリエンテーションフラットが形成されている場合は、保持テーブルにオリエンテーションフラット合わせ部を設け、ウエーハに形成されているオリエンテーションフラットと保持テーブルにオリエンテーションフラット合わせ部とを合わせることにより、クラックとオリエンテーションフラットとの位置関係に基づき、保持面2a上における研削屑の位置を特定することができる。   Further, the holding table 2 of the present embodiment includes a notch aligning portion 26, and by aligning the positions of the notch aligning portion 26 and the notch N formed on the wafer W, based on the positional relationship between the crack C and the notch N. Although the position of the grinding waste 100 on the holding surface 2a is specified, when the wafer is not notched and the orientation flat is formed, the holding table is provided with an orientation flat alignment portion, By aligning the orientation flat alignment portion with the orientation flat formed and the holding table, the position of the grinding waste on the holding surface 2a can be specified based on the positional relationship between the crack and the orientation flat.

さらに、保持テーブルにノッチ合わせ部もオリエンテーションフラット合わせ部も備えていない場合は、ウエーハの中心からクラックまでの距離を制御部91が求め、保持テーブル2の中心から求めた距離だけ離間した位置に洗浄砥石を接触させて保持テーブル2を1回転させることにより、クラックに対応する位置にある研削屑を除去することができる。   Further, when the holding table has neither a notch alignment portion nor an orientation flat alignment portion, the control unit 91 obtains the distance from the center of the wafer to the crack, and is washed at a position separated from the center of the holding table 2 by the obtained distance. By making the grindstone contact and rotating the holding table 2 once, grinding debris at a position corresponding to the crack can be removed.

1:洗浄装置
2:保持テーブル 2a:保持面 20:ターンテーブル 21:ポーラス板
22:枠体 23:ベース 24:吸引路 25:吸引源 26:ノッチ合わせ部
27:バリア 28:ねじ穴
3a、3b:研削手段
30:回転軸 31:ホイールマウント 32:研削ホイール 33:モータ
34:研削砥石 35:ガイドレール 36:昇降板 37:モータ
4a、4b:カセット載置領域 40a、4b:カセット
5:搬出入手段 50:位置合わせテーブル
6a:第一の搬送手段 6b:第二の搬送手段
7:ウエーハ洗浄手段 70:スピンナーテーブル
8:洗浄手段
80:回転軸 81:ハウジング 82:洗浄砥石
83:昇降手段(押圧手段) 830:レール
84:保持テーブル回転手段
840:モータ 841:エンコーダ 842:軸 843:プーリ 844:ベルト
845:従動プーリ
85:ガイドレール
90:クラック検出手段 900:カメラ 901:リング照明
91:制御部 92:記憶部
W:ウエーハ Wa:表面 Wb:裏面 WO:中心 N:ノッチ C:クラック
T:保護テープ
100:研削屑
1: Cleaning device 2: Holding table 2a: Holding surface 20: Turntable 21: Porous plate 22: Frame body 23: Base 24: Suction path 25: Suction source 26: Notch alignment part 27: Barrier 28: Screw holes 3a, 3b : Grinding means 30: rotating shaft 31: wheel mount 32: grinding wheel 33: motor 34: grinding wheel 35: guide rail 36: lifting plate 37: motor 4a, 4b: cassette mounting area 40a, 4b: cassette 5: loading / unloading Means 50: Positioning table 6a: First transport means 6b: Second transport means 7: Wafer cleaning means 70: Spinner table 8: Cleaning means 80: Rotating shaft 81: Housing 82: Cleaning grindstone 83: Lifting means (pressing) Means) 830: Rail 84: Holding table rotating means 840: Motor 841: Encoder 842: Shaft 843: Push 844: Belt 845: Driven pulley 85: Guide rail 90: Crack detection means 900: Camera 901: Ring illumination 91: Control unit 92: Storage unit W: Wafer Wa: Front side Wb: Back side WO: Center N: Notch C: Crack T: protective tape 100: grinding scrap

Claims (2)

ポーラス板を備えウエーハを保持する保持面を有する保持テーブルと、該保持テーブルの該保持面で保持されるウエーハを砥石の研削面で研削する研削手段と、該保持面を洗浄する洗浄手段と、を備える研削装置であって、
該洗浄手段は、該保持面に接触して該保持面より突出した研削屑を削り取る板状の洗浄砥石と、該洗浄砥石を該保持面に押圧する押圧手段と、該保持テーブルを該保持面の中心を軸に回転させる保持テーブル回転手段とを備え、
該研削手段によって研削され該保持テーブルに保持されるウエーハの被研削面側からウエーハに発生したクラックを検出するクラック検出手段と、
該クラック検出手段がウエーハに発生したクラックを検出したときに、該洗浄手段に該保持面を洗浄させ該保持面と該研削面との平行度を維持する制御部と、
を備える研削装置。
A holding table comprising a porous plate and holding a wafer; a grinding means for grinding the wafer held by the holding surface of the holding table with a grinding surface of a grindstone; and a cleaning means for cleaning the holding surface; A grinding apparatus comprising:
The cleaning means includes a plate-shaped cleaning grindstone that contacts the holding surface and scrapes off grinding waste protruding from the holding surface, a pressing means that presses the cleaning grindstone against the holding surface, and the holding table that holds the holding table. Holding table rotating means for rotating about the center of the shaft,
Crack detecting means for detecting cracks generated in the wafer from the ground surface side of the wafer ground by the grinding means and held on the holding table;
A controller that cleans the holding surface by the cleaning means when the crack detecting means detects a crack generated in the wafer, and maintains parallelism between the holding surface and the grinding surface;
A grinding apparatus comprising:
前記クラック検出手段が検出したクラックの位置を記憶する記憶部を備え、前記制御部は、該記憶部が記憶するクラックの位置に相当する該保持面の位置を該洗浄手段に洗浄させる請求項1記載の研削装置。   2. A storage unit that stores a position of the crack detected by the crack detection unit, and the control unit causes the cleaning unit to clean the position of the holding surface corresponding to the position of the crack stored by the storage unit. The grinding apparatus as described.
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