TW200931560A - Normal pressure drying device, substrate processing apparatus and substrate processing method - Google Patents

Normal pressure drying device, substrate processing apparatus and substrate processing method Download PDF

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TW200931560A
TW200931560A TW097130022A TW97130022A TW200931560A TW 200931560 A TW200931560 A TW 200931560A TW 097130022 A TW097130022 A TW 097130022A TW 97130022 A TW97130022 A TW 97130022A TW 200931560 A TW200931560 A TW 200931560A
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substrate
unit
coating
atmospheric pressure
temperature
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TW097130022A
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Chinese (zh)
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TWI376761B (en
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Fumihiko Ikeda
Hiroshi Nagata
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The substrate where the resist liquid is coated with the resist coating unit in the next of the upstream side is possessed on the roller transportation path, and enters in the housing of normal pressure drying unit (VD) by the roller transportation. The substrate that moves on the roller transportation path in the housing is put more greatly than the atmosphere of the normal temperature in the heating atmosphere of the high temperature (60 DEG C for instance). As a result, the thermal energy of the heating atmosphere enters directly into the surface of the resist coating film on the substrate.

Description

200931560 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種基板處理裝置及基板處理方法,係在被處 理基板上形成含溶劑之處理液之塗布膜,尤關於用於將塗布膜在 烘烤步驟前適度乾燥之乾燥裝置。 、 【先前技術】 Ο200931560 IX. Description of the Invention: The present invention relates to a substrate processing apparatus and a substrate processing method, which are coating films for forming a solvent-containing treatment liquid on a substrate to be processed, and more particularly to use for coating a coating film. A drying device that is moderately dry before the baking step. [Prior Art] Ο

於液晶顯示器(LCD)之製造中,若於微影步驟中在被處理基板 (玻璃基板)上塗布抗姓劑後,立即進行使抗蝕劑中之殘存溶劑蒸發 =熱處理亦即預烘’則於加祕理單元时受到來自於盘 ’於減遷環境中使基板上之抗姓劑中的殘存溶劑 η固a段,以在抗_塗布臈之表面戦硬化層(―種^ 層布畴敎_鱗麵狀,僅使表 ,觸=頂、支絲空料的熱影響而造成溶,發不均 ^有抗·膜厚出現不-致的問題,以,在麵前,^ f 之減壓乾燥法,顧烘時,不僅能抑制主體抗_^ 2斑!,,而且使顯影處理時抗蝕劑之非溶解性丨或; 厚才貝失量減_y,件到抗蝕劑解像度提高的效果。 開口 之=利=己載,具有:頂面 以可氣密密合或嵌合構成之蓋狀上U位㈡之頂面 將腔室關(使上部腔板=载置, ==入;室時’係使上部腔室利用 i至開放再者’為了將基板裝載/卸載,使μ以而將 突: 5 200931560 【發明内容】 (發明欲解決之問題) 像上述減壓乾燥裝置,為了使減壓度提高到幾近絕對直办, =需使腔室強度增大,大型化且成本非常高。而且,由於=將 土板搬出入腔室時,將上部腔室上升降下(開閉),因此丰 大型化會出現各種不方便。 奴土板 亦即’若基板尺寸如LCD用玻璃基板,一邊超過2爭 則腔室顯著大型化,僅上部腔室就要2軌上重量,需要大创 來,振ίΐΪ成起塵埃問題或對於作業員之安全問題 « /予見出來。又,輸送機器人也愈益大型化,但 =水平並輸送變得_,將職布抗_後之基板以如同= 狀態輸送,於將基板之搬出入減壓乾燥裝置之腔室 或裝載/卸麟,容紐生位置偏離或碰撞、破損等錯誤。腔至 、韻it由於在魏巾’基板係在從台座如之鎖上接受 膜會有銷轉印醜跡,此點亦。邱純上之抗敍劑 ^卜^室變得愈大,則愈難保持減壓環境均句性, ❹ 板上^區域使抗姓劑塗布膜以無斑地均勾乾燥變得困難。土 t發明’有鑑於如上述習知技術之問題而生, 一種㊉壓乾燥裝置、基板處理裝置及芙拓處 ;提供 在被處理基板上之處理液之膜,不使;於塗布 布膜之主體細綱恤將塗 度硬化層,而實現防止乾燥斑發在液膜表面形成適 (解決問題之4辑嶋塗布膜膜質。 J達成上述目的,本發明之常壓乾燥裝置 有含溶劑之處理液的被處理基板在既 乾燥處理部,於前述平流之輸送中, 1塔上干机輸送; 基板上之處理液塗布膜提供使該表層 述 能量,而使前述塗布膜乾燥。 …為車乂下層部為而溫之 6 200931560 .本發明之基板處理袭置, 二 於前述基板之輸送方向中,蘇、則述常壓乾燥裝置;塗布單元, 鄰,-面將前述基板平流輸H在前述常壓乾縣置之上游側 液;烘烤單元,在前述基板之輪二=前述基板上塗布前述處理 置之下游側鄰,將前述_面基’配置^述常壓乾燥裝 處理基板上塗布含溶劑之處理液.將f ^二驟:,布步驟’在被 輸送,並於前述平流輸送中,於,】既定輸,路上平流 之塗布膜提供將其表層部加熱為 述基板上 塗布膜乾燥。 π平乂卜層。卩為同溫之能量,使前述 於常溫:常ί下二燥形之處理液之塗布膜係 之液相擴散之速度間,由於 ❿ 。其結果,即使_壓乾燥,使 ,乾燥法時為㈣的塗布膜改魏理結果。而且,由 式,因此可達成裝置構成簡易化、小型化、低成本化等;、机 斤ΓϊΐϊΓΐ一較佳態樣,乾燥處理部’具有將輸送路上之 === 於此情形’對於在輸送路上以平流移動之 ,利用上述環境提供熱能。較佳為,具備殼體, 該喊體將加知之放射熱所及之既定區_輸送路包圍。並且, 導人σ ’將外部空氣導人;排氣部,用以將殼 體内進仃排氧;喊體内從基板上之塗布臈蒸發的溶劑與 起被送到排氣部。依此方式’殼體内為了將從基板I之塗$膜基 發的溶劑排氣’可使空氣流通’可以使對於基板上之塗布膜實^ 7 200931560 ΐίίΐ狀態’可輕祕防止由於氣减風财均造成之塗布膜 將其路上之加熱環境之溫度以机以上較佳,為 將基板上之塗布膜以良好效率乾燥,更佳為听以上。較佳為 易被基板魏之找•親移料商吸收且不 .風對於在輸上以平流義之基板上之塗布膜從上方吹 ❹ ❹ 將暖佳雜而言,乾燥處理部可具有氣體噴嘴, 送 —=„佳態樣,設有調溫部,將與平流輸送路之基板 味件調溫到既定溫度。例如,平流輸送路使用滾動 滾動輸送路之滾子調溫。於此情形,將輸送 高於常溫且低於加熱環境之溫度。 =本發明之常壓乾燥裝置、基板處理裝置及基板處理方 ”藉由上述構成及作用’麟於塗布在魏理基板上之處理液 =丄不使職壓乾燥手法,而保持塗布膜之主體部分為適度液 t半乾狀態,在液縣_錢度魏層,緖止乾燥斑發生 或有效率地實現塗布膜之膜質提升。 【實施方式】 (實施發明之最佳形態) 以下,參照附圖說明本發明之較佳實施形態。 圖1顯示就能適用本發明之常壓乾燥裝置、基板處理裴置及 基板處理方法之一構成例而言的塗布顯影處理系統。該塗布顯影 處理系統10,設於潔淨室内,例如以玻璃基板作為被處理基板, ,行LCD製造處理中微影步驟中之清潔、抗蝕劑塗布、預烘、顯 影及後烘等一連串處理。曝光處理,於鄰接該系統設置之外部曝 200931560 光裝置12實施。 該塗布顯影處理系統10,在中心 3=18於其長邊方向(X方向]兩端部配置E盒站(C/S、14及界面 20 ΪΐΪ,14 ’為系統1〇之昆盒搬入出埠,具備:®盒台座 會聂ίίί 0"方向)並排至多4個而载置可將基板G以多排 收納多數基板之匣盒C;輪送機構22,對於該台座20 ❹ ❿ 打基板G之出入。輸送機構22,具可將基板G以1 片為早位固持之輸送臂22a,可於X、γ、z、0之4軸動作 基板G與鄰接之處理站(P/S)16側進行遞送。 、 认多f=(P/S)16 ’係將各處理部依照處理流或步驟配置在水平 的糸統,邊f向(X方向)延伸且平行之逆向的一對線A、B。 邦之,於從E盒站(C/S)14侧往界面站(I/F)18側之上游 H從上游側起依序沿著帛1平流輸送路34,將搬入單 Γ224、峨理部26、第1熱處理部28、塗布處理部 30及第2熱處理部32配置成一列。 M 搬人單元⑽PASS)24從Ε盒站(C/S)14之輸送機 ί u接ΐΐί理之基板G,於既定之作#時間投人第1平流輸送 Ϊ部26 ’沿著第1平流輸送路34從上游側起依序 準77子UV照射單元(E_UV)36及擦磨清鮮元(SCR)38。第i 熱處理部28,從上酬起鱗設置軸單元(AD)4G及冷卻單元 (COL)42。塗布處理部3〇,從上關起料設置抗㈣塗元 (COT)44及常壓乾燥單元(ν〇)46。第2熱處理部32,從上游侧起 依序设置韻單元(PRB—BAKE)48及冷卻單元(C〇L)5〇。位於第 I熱處理冑32之下賴鄰的帛丨平流輸送路34的終點,設有 〇(PASS)52、。在。第1平流輸送路%上,平流輸送而來的基板〇, 從該終點之傳遞單元(I>ASS)52遞送到界面站(I/F)i8。 另一方面,於從界面站(I/F)18側往匣盒站(c/s)14侧之下游部 處理線B ’沿著第2平流輸送路64從上游侧起依序成一列配置: 200931560 顯影單元(DEV)54、後烘單元(p〇st_bake)56、冷卻單元 ¢01^58、檢查單元(ap)60及搬出單元(〇UT pASS)62。在此, 後洪單元(POST-BAKE)56及冷卻單元(c〇L)58,構成第3執處理 =66。搬出單元(OUT PASS)62,從第2平流輸送路64將處理完 之基板G逐片接取,並交給g盒站(c/s)14之輸送機構22。In the manufacture of a liquid crystal display (LCD), if the anti-surname agent is applied to the substrate to be processed (glass substrate) in the lithography step, the residual solvent in the resist is immediately evaporated = heat treatment, that is, pre-bake- When adding the secret unit, the residual solvent in the anti-surname agent on the substrate is fixed from the disk in the environment to reduce the hardened layer on the surface of the anti-coating layer (the seed layer)敎 鳞 scaly, only the surface, touch = top, the heat of the wire is caused by the heat effect, the hair is uneven, there is an anti-film thickness, the problem is not caused, in front, ^ f Under reduced pressure drying method, not only can suppress the main body anti- 2 2 spot, but also make the resist non-solvent 显影 or the thickness of the resist during processing; 厚 y, the piece to the resist The effect of the resolution is improved. The opening = the profit = the load, and the top surface is closed by the top surface of the U-shaped (2) cover which is formed by airtight adhesion or fitting (the upper cavity plate = mounting, ==in; chamber time 'use the upper chamber to use i to open again' in order to load/unload the substrate, so that μ will be protruded: 5 200931560 [Invention] (Invention Solution to the problem) Like the above-mentioned vacuum drying device, in order to increase the degree of decompression to almost absolute, it is necessary to increase the strength of the chamber, increase the size, and the cost is very high. Moreover, since the soil plate is carried out into the cavity In the room, the upper chamber is lifted up and down (opening and closing), so there is various inconveniences in the enlargement of the large size. If the substrate size is such as a glass substrate for LCD, the chamber is significantly larger than 2, and only the chamber is enlarged. The upper chamber is required to have a weight on the two rails, which requires a large amount of damage, which is a dust problem or a safety problem for the operator. / Moreover, the transport robot is also becoming larger and larger, but = level and transport becomes _ After the substrate is transported in the same state as the state, the substrate is carried out into the chamber of the vacuum drying device or loaded/unloaded, and the position of the Nikon is deviated or collided, damaged, etc. It is because the Wei-Wo's substrate is in the form of a film that is transferred from the pedestal, and there is a pin transfer ugly. This is also the point. The more the anti-study agent of Qiu Chun's anti-synthesis agent becomes bigger, the harder it is to keep it. Pressing the environment to be uniform, ^ It is difficult to coat the coated film with a spot-free drying. The invention is based on the problems of the above-mentioned prior art, a ten-pressure drying device, a substrate processing device, and a Futuo; provided on the substrate to be processed. The film of the treatment liquid is not made; the main body of the coating film is coated with a hardened layer to prevent the formation of dry spots on the surface of the liquid film (the problem is solved). In the atmospheric drying apparatus of the present invention, the substrate to be treated having the solvent-containing treatment liquid is transported in the above-mentioned flat flow in the dry processing section, and the processing liquid coating film on the substrate is provided to make the surface layer Energy, the coating film is dried. ... is the lower part of the rut, and the temperature is 6 200931560. The substrate treatment of the present invention occurs, in the direction of transport of the substrate, Su, the atmospheric drying device; coating unit , the adjacent side, the surface of the substrate is flushed with H in the upstream side of the atmospheric pressure dry county; the baking unit is coated on the downstream side of the substrate on the substrate 2 of the substrate; 'Configure the coating liquid containing the solvent on the substrate under normal pressure drying. The f ^ 2 step: the cloth step 'is transported, and in the above-mentioned advection transport, then, the coating film is formed on the road. It is provided that the surface layer portion is heated to be dried on the substrate on the substrate. π flat layer.卩 is the energy of the same temperature, so that the liquid phase diffusion speed of the coating film of the treatment liquid at the normal temperature: the normal dryness is due to ❿. As a result, even if the pressure was dried, the coating film of (4) in the drying method was changed. Further, by the formula, it is possible to achieve a simplified device configuration, miniaturization, cost reduction, etc., and in a preferred embodiment, the drying treatment portion 'has a === on the conveying path. The road moves in a flat flow and uses the above environment to provide heat. Preferably, the housing is provided with a housing that surrounds a predetermined area _ conveying path of the known radiant heat. Further, the guiding person σ' guides the outside air; the exhausting portion is used to discharge oxygen into the casing; and the solvent evaporated from the coating on the substrate is sent to the exhaust portion. In this way, in order to prevent the air from flowing through the solvent venting from the substrate of the substrate I, the coating film on the substrate can be made to prevent the gas from being reduced. It is preferable that the coating film caused by the wind and the film has a temperature higher than the temperature of the heating environment on the road, and the coating film on the substrate is dried with good efficiency, and it is better to listen to the above. Preferably, the substrate is easily absorbed by the substrate and is not absorbed by the material. The wind is blown from above on the coating film on the substrate which is flushed on the surface. ❹ For the heating, the drying portion may have a gas nozzle. , send -= „ good condition, with a temperature adjustment unit, the temperature of the substrate with the advection conveying path is adjusted to a predetermined temperature. For example, the advection conveying path uses the rolling roller to adjust the temperature of the roller. In this case, The temperature is higher than the normal temperature and lower than the temperature of the heating environment. The atmospheric pressure drying device, the substrate processing device, and the substrate processing device of the present invention are processed by the above-mentioned composition and function. The main part of the coating film is kept in a semi-dry state of a moderate liquid t, and the dry plaque is generated or the film quality of the coating film is efficiently improved in the liquid state. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 shows a coating and developing treatment system in which one of the atmospheric pressure drying apparatus, the substrate processing apparatus, and the substrate processing method of the present invention can be applied. The coating and developing treatment system 10 is provided in a clean room, for example, a glass substrate as a substrate to be processed, and a series of processes such as cleaning, resist coating, prebaking, development, and post-baking in the lithography step in the LCD manufacturing process. The exposure process is implemented in an external exposure 200931560 optical device 12 adjacent to the system. In the coating and developing treatment system 10, E-box stations (C/S, 14 and interface 20 ΪΐΪ, 14' are placed in the center of the longitudinal direction (X-direction) at the center 3 = 18, and 14' is the system 1埠, with: 盒 台 会 ί ί 至 方向 方向 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® The transport mechanism 22 has a transport arm 22a that can hold the substrate G in an early position, and can operate the substrate G on the X-axis of X, γ, z, and 0, and the adjacent processing station (P/S) 16 The side is delivered. The multi-f=(P/S)16' is a pair of lines A that are arranged in the horizontal system according to the processing flow or the step, and the side f extends in the (X direction) and is reversed in the opposite direction. , B. State, from the E box station (C / S) 14 side to the interface station (I / F) 18 side of the upstream H from the upstream side, along the 帛 1 advection transport path 34, will be moved into the single 224, The processing unit 26, the first heat treatment unit 28, the coating processing unit 30, and the second heat treatment unit 32 are arranged in a line. The M moving unit (10) PASS) 24 is connected to the conveyor of the cassette station (C/S) 14 Substrate G, in the established # Inputs for the first time advected Ϊ portion 26 'conveyance path 34 from the upstream side sequentially quasi sub UV irradiation units 77 (E_UV) 36 and rubbing freshener element (SCR) 38 along first advection. The i-th heat treatment unit 28 is provided with a shaft unit (AD) 4G and a cooling unit (COL) 42 from the upper scale. The coating treatment unit 3 is provided with an anti-(four) coating element (COT) 44 and a normal-pressure drying unit (ν〇) 46 from the top. The second heat treatment unit 32 sequentially sets the rhyme unit (PRB_BAKE) 48 and the cooling unit (C〇L) 5〇 from the upstream side. The end of the meandering flow path 34 located below the first heat treatment crucible 32 is provided with a PASS 52. in. The substrate enthalpy conveyed from the first advancing transport path % is delivered from the end point transfer unit (I > ASS) 52 to the interface station (I/F) i8. On the other hand, the downstream processing line B' from the interface station (I/F) 18 side to the cassette station (c/s) 14 side is arranged in a row from the upstream side along the second advancing conveying path 64. : 200931560 Development unit (DEV) 54, post-drying unit (p〇st_bake) 56, cooling unit ¢01^58, inspection unit (ap) 60, and carry-out unit (〇UT pASS) 62. Here, the flooding unit (POST-BAKE) 56 and the cooling unit (c〇L) 58 constitute the third processing = 66. The carry-out unit (OUT PASS) 62 picks up the processed substrate G from the second advancing transport path 64 one by one, and delivers it to the transport mechanism 22 of the g-cart station (c/s) 14.

在兩處理線A、B之間,設有辅助輸送空間68,可將基板G =片為單位水平載置之穿梭機構7G,未圖示之驅動機構, 在處理線方向(X方向)雙向移動。 ,面站(I/F)18,具有將基板G在上述第j及第2平流輸送路Between the two processing lines A and B, an auxiliary transport space 68 is provided, and the substrate G=slice can be placed horizontally by the shuttle mechanism 7G, and the drive mechanism (not shown) moves bidirectionally in the processing line direction (X direction). . Surface station (I/F) 18 having the substrate G on the jth and second advection transport paths

Μ ^或鄰接之曝光裝置12間進行送、拿之輸送裝置72,於該 Ϊίΐΐ 72之周圍’配置著旋轉台座_74及周邊裝置%。旋 =4 ’係將基糾於水平面内旋轉之台座,用在與曝光 ) Β遞送時使長方形之基板G做方向變換。周邊裝置, 如印字曝光機(而獨或周輕光裝置_等連接於第2 十流輸送路64。 2顯示該塗布顯影處理系統巾’對於1片基板G之所有步 步錢’在g盒站(c/s)14中,輸送機構22從台座 入到虛、盒^取出1片基板G’並將該取出的基板0搬 〇n ^ ^ )於處理線A側之搬入單元(IN PASS)24(步驟 板G從搬入單元(m PASS)24移載或投入第ι平流輸送 中,葬由進八輪送路34之基板G ’最初在清潔處理部26 依庠t 射單元(Ε_υν)36及擦磨清潔單元(默)38, 清料ί理及擦磨清潔處理(步驟S2、S3)。於擦磨 :潔早tl(SCR)38,對於在平流輸送路34上水平 洗用,將ί板表面的粒子狀污垢除去,之^施以沖 中,一連_、^^刀4使基板G乾燥。擦磨清潔單元(SCR)38 送路34 G崎軸1平流輸 200931560 第1熱處理部28中,输送 ^ or a transport device 72 that is transported between the adjacent exposure devices 12, and a rotating pedestal _74 and peripheral device % are disposed around the Ϊ ΐΐ 72. The rotation = 4 ' is a pedestal that corrects the rotation in the horizontal plane, and is used to change the orientation of the rectangular substrate G when it is delivered. The peripheral device, such as a printing exposure machine (and the single or weekly light device _ etc. is connected to the second ten-pass conveying path 64. 2 shows the coating development processing system towel 'for all the steps of one substrate G' in the g box In the station (c/s) 14, the transport mechanism 22 removes one substrate G' from the pedestal into the dummy, and removes the substrate 0' from the pedestal and moves the removed substrate 0 to the transfer unit on the processing line A side (IN PASS). 24 (step board G is transferred from the loading unit (m PASS) 24 or put into the first leveling conveyance, and the substrate G' which is buried into the eight-wheel feeding path 34 is initially in the cleaning processing unit 26 depending on the unit (Ε_υν) 36 and wiping cleaning unit (default) 38, cleaning and cleaning cleaning process (steps S2, S3). After rubbing: early morning tl (SCR) 38, for horizontal washing on the advection conveying path 34, The particle-like dirt on the surface of the 板 plate is removed, and the slab is smashed, and the substrate G is dried by a _, ^^ knife 4. The scrub cleaning unit (SCR) 38 is sent to the road 34 G-axis 1 flat flow transmission 200931560 1st heat treatment In Part 28,

使用瘵氣狀HMDS之黏附處理,將被處理面疏水化(步驟S4)。該 ,附處理終了後,將基板G於冷卻單元(c〇L)42冷卻至既定基板 溫度(步驟S5)。之後,基板〇從第1平流輸送路34下來,搬入塗 布處理部30。 塗布處理部30中’基板g最初於抗蝕劑塗布單維 持平流’利用使用狹縫喷嘴之非旋轉法在基板頂面(被處理面)塗布 抗蝕劑液,之後立即在下游側鄰之常壓乾燥單元(VD)46,接受後 述常壓環境下之抗蝕劑乾燥處理(步驟S6)。 ❹、、離開塗布處理部%之基板G,從第1平流輸送路34下來, ,過第2熱處理部32。第2熱處理部32中,基板G最初於麵 =(PRE-BAKE)48接受預烘作為抗餘劑塗布後之熱處理或曝 光前之熱處理(步驟S7)。藉由該預烘,將基板G上之祕劑膜中 殘留的溶劑蒸發除去’強化抗#冑彳膜對於基板之密合性。其次, 基,G在冷卻單元(C〇L)5〇冷卻至達既定之基板溫度(步驟S8)。 之後’基板G從第1平流輪送路34之終關傳遞單元(pA %, 退回到界面站(I/F)18之輸送裝置72。 ❿ 界面站(I/F)18中’基板(3在旋轉台座74接受例如9〇麼之古The treated surface is hydrophobized by the adhesion treatment of the helium-like HMDS (step S4). After the end of the process, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (c〇L) 42 (step S5). Thereafter, the substrate 下来 is taken down from the first advancing conveying path 34, and is carried into the coating processing unit 30. In the coating treatment unit 30, 'the substrate g is initially maintained in a flat flow on the resist coating sheet'. The resist liquid is applied to the top surface (the surface to be processed) of the substrate by a non-rotation method using a slit nozzle, and is immediately adjacent to the downstream side. The pressure drying unit (VD) 46 receives a resist drying process in a normal pressure environment to be described later (step S6). The substrate G that has left the coating processing unit is removed from the first advancing conveying path 34 and passes through the second heat treatment unit 32. In the second heat treatment unit 32, the substrate G is first subjected to prebaking at the surface = (PRE-BAKE) 48 as a heat treatment after application of the anti-surplus agent or heat treatment before exposure (step S7). By this prebaking, the solvent remaining in the secret film on the substrate G is evaporated to remove the adhesion of the anti-tanning film to the substrate. Next, the base, G is cooled to a predetermined substrate temperature in the cooling unit (C〇L) 5 (step S8). Then, the substrate G is transferred from the first smoothing wheel 34 to the final transfer unit (pA %, returned to the transport unit 72 of the interface station (I/F) 18. ❿ Interface station (I/F) 18 in the 'substrate (3 Accepting, for example, 9 之 in the rotating pedestal 74

11 200931560 送期1被施以娜、沖洗、乾燥之一連串顯影處 。 態=於第2平流輸送路64,依序通過第3熱處理 jAP)6G。於第3熱處理部66中’基板G最初錢^ 後供做為顯影處理後之熱處理的後烘烤(步驟S12)。該 冷卻至既定之基板溫度(步驟叫。;=二早〇元 =ί(=:Γ綱案物_轉級麵㈣•膜厚 搬,單元(〇UT PASS)62 ’從第2平流輸送路6 有步驟處理之基板G,遞送到匣盒站(c/s)14之輸送 凡 送麟22雜㈣單元_ paSS)62°接取 之處^畢的基板G收納於任—(通常為原來蒙盒 本發明可以義於該塗布顯 ❹ 中,=抗;巧理部(44、二48)^^態11 200931560 Delivery period 1 is applied to a series of developments, such as washing, drying and drying. State = in the second advection conveying path 64, sequentially passing through the third heat treatment jAP) 6G. In the third heat treatment unit 66, the substrate G is initially used as a post-baking for the heat treatment after the development treatment (step S12). This cooling to a predetermined substrate temperature (step is called; = two early 〇 yuan = ί (=: Γ 案 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 6 The substrate G with the step processing is delivered to the cassette station (c/s) 14 and the delivery is sent to the Lin 22 (four) unit _ paSS) 62 ° where the substrate G is stored in the room - usually The present invention can be applied to the coating, =; 智理部(44, 二48)^^

圖3中,抗蝕劑塗布單元(COT)44,且有.涂右w p ^ A ^座長邊方向浮 3送之基板G之顧餘祕紐座80上 空權,臟晴嘴84進行重清86’在塗布處理之 之多設有將既定氣體(例如空氣)向上方噴射 喷射孔88,藉由從該等氣體喷射孔88喷射之氣體之麗 12 200931560 力,使基板G從台座頂面上浮固定高度。 基板輸送機構82,具備:一對導軌9〇a、_ ΐ移動=構92 ’可沿著該等導軌9〇a、讎; ❹ ❹ 之喷嘴㈣嘴84 ’可以與111持該喷嘴 在上述塗布位置射嘴重可於以向升降,能 噴嘴重清部86,在上浮台座80上方之既定位置 職注給處理部98,作為塗布處理之前置準備, 84 嘴山84喷吐抗姓劑液;喷嘴浴100,防止抗韻劑喷嘴 L播t 乾燥而使雜在溶継氣之環境巾;喷嘴清ί =脱’將附著在抗_料84之抗_吐出口附近=以 在此,說明在抗蝕劑塗布單元(COT)44 ^入叹疋在上浮台座80上之前端側 固持並接取基板G。在上浮台座80上 熊。孔88噴射之氣體(空氣)的壓力’以大致水平姿勢維持上浮狀 滑動機構92 —面固持基板—面朝向常壓乾燥單元 )= 於輸送方向(X方向)移動,當基板G通過抗側喷嘴料 旌’邊触嘴Μ撼板G之頂碰液狀祕舰以帶狀 此,在基板G上從基板前端朝後端,以布設地毯之方式,、 200931560 全面形成抗蝕劑液之塗布膜RM(圖5)。如此,塗布有抗蝕劑之基 板G ’之後亦利用滑動機構92,在上浮台座80上進行上浮輸送, 若超越上浮台座80之後端,則藉著遞送用及上浮輸送 j 子105,以此狀態平流搬入到後排之常壓乾燥單元(VD)46。 塗布處理完成的基板G,如上所述,送出到常應乾燥單元 (VD)46側後,為了接取次一基板G ’滑動機構92返回上浮台座 80之則端側之搬入部。又,抗钱劑喷嘴84,若完成1次或多次之 塗布處理,則從塗布位置(抗姓劑吐出位置)往喷嘴重清部移 動,在此處進行噴嘴清潔或預備注給處理等重清或前置^備後, 返回塗布位置。 如圖3所示,在抗蝕劑塗布單元(c〇T)44於台座8〇之延長線 上(下游側),布設有構成第1平流輸送路34(圖丨)之一部分或一區 間的滚動輸送路104。該滾動輸送路刚,係將用以將基板G平流 輸,之滾子I。5於處理線A之方向(χ方向〉以固定間隔布設而成, 或穿過常壓獅單tl(VD)46,而延續卿2熱處理部32(圖 1)為止。 如圖4所示,常壓乾燥單元(VD)46中,在滾動輸送路1〇4之 亡=置-片或將多數片排列配置對於在滾動輸送路iG4上以平 ==基板G上之抗_塗布膜鹽提供本發明之乾燥用加熱 _放射加熱器,例如平板形護套加熱器獅。護套加献 二3面(底面),例如具有陶瓷包覆,利用加熱器電源⑽ t而通電並發熱,利用從該高溫表面放射 =周圍▲之二耽加熱,在滾動輸送路1〇4上形成較常溫(通常Μ 既2ΐ(較佳為6吖以上)的乾綱境似。 的^112。於該殼體112之輸送方向 方向)¾ U4 ’兼作為滚動輸送路104之出入口。又;二J 送方向番吉夕古古双體112於底壁或輸 σ )相對向的兩側壁,設有用以將殼體112 200931560 =室内排氣,之排氣口 116。各排氣口 116,通過排氣管118與排 氣泵浦或排氣風扇内建之排氣部12〇相通。以該方式,對於殼體 112内>導入外部空氣並將室内排氣,係為了將乾燥處理時從基板〇 上之抗蝕劑塗布膜RM蒸發的溶劑排出到室外,因此,對於基板 G上,抗餘劑塗布膜RM並未積極的給予風。 ❹In Fig. 3, the resist coating unit (COT) 44, and the right wp ^ A ^ block length 3 direction of the substrate G to the back of the secret bond 80 of the base, the dirty chute 84 to re-clear 86 'In the coating process, a predetermined gas (for example, air) is sprayed upward to the injection hole 88, and the gas is ejected from the gas injection holes 88, and the substrate G is floated from the top surface of the pedestal. height. The substrate transport mechanism 82 includes a pair of guide rails 9〇a, _ ΐ movement = a structure 92' along which the guide rails 9a, 雠; a nozzle ( ( nozzle (4) a nozzle 84' can hold the nozzle with the nozzle at the above coating The position of the nozzle can be lifted and lowered, and the nozzle refining unit 86 can be placed in the predetermined position above the floating pedestal 80 to the processing unit 98 to prepare for the coating process. 84 Mouth 84 sprays the anti-surname liquid; The nozzle bath 100 prevents the anti-noise agent nozzle L from being dried and makes the environmental towel mixed with the sputum gas; the nozzle clear ί = 脱 will adhere to the anti- _ _ _ _ _ _ _ _ _ _ _ _ _ _ A resist coating unit (COT) 44 is held by the sigh on the front end side of the floating pedestal 80 and picks up the substrate G. On the floating pedestal 80, bear. The pressure of the gas (air) injected by the hole 88 is maintained in a substantially horizontal posture to maintain the floating sliding mechanism 92 - the surface holding substrate - the surface is oriented toward the normal pressure drying unit) = moving in the conveying direction (X direction), when the substrate G passes the anti-side nozzle The material of the 触 边 边 边 边 边 G G G G G G G G G G G G G G G G 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 RM (Figure 5). Thus, after the substrate G' coated with the resist is also lifted and transported on the floating pedestal 80 by the sliding mechanism 92, if it passes beyond the rear end of the floating pedestal 80, the j-105 is delivered by the delivery and the floating state. The advection is carried into the atmospheric pressure drying unit (VD) 46 in the rear row. The substrate G which has been subjected to the coating treatment is sent to the side of the normal drying unit (VD) 46 as described above, and is returned to the end side of the floating pedestal 80 in order to receive the next substrate G ′ sliding mechanism 92. Further, when the anti-money agent nozzle 84 is subjected to the coating treatment one or more times, it is moved from the application position (the anti-surname discharge position) to the nozzle re-cleaning portion, where the nozzle cleaning or the preliminary injection processing is performed. After clearing or pre-setting, return to the coating position. As shown in FIG. 3, on the extension line (downstream side) of the resist coating unit (c〇T) 44 on the pedestal 8〇, a roll or a section constituting one of the first advection conveying paths 34 (Fig. The conveying path 104. The rolling conveyance path is a roller I for conveying the substrate G in a flat manner. 5 is arranged in the direction of the processing line A (χ direction) at a fixed interval, or through the atmospheric pressure lion (tl) (VD) 46, and continues the heat treatment unit 32 (Fig. 1). As shown in Fig. 4, In the atmospheric drying unit (VD) 46, in the rolling conveyance path 1〇4=set-piece or arrangement of a plurality of sheets for the anti-coating film salt on the rolling conveyance path iG4 on the flat==substrate G The heating/radiation heater for drying of the present invention, for example, a flat-shaped sheathed heater lion. The sheath is provided with two sides (bottom surface), for example, with a ceramic coating, and is energized and heated by a heater power source (10) t. The high-temperature surface radiation = heating around the ▲, forming a relatively normal temperature on the rolling conveyance path 1 〇 4 (usually 干 2 ΐ (preferably 6 吖 or more) of the dry outline like ^ 112. The direction of the transport direction of 112) 3⁄4 U4 'also serves as the entrance and exit of the rolling conveyance path 104. In addition, the two J-directions of the opposite side of the wall of the Fukji sago ancient double body 112 or the σ) are provided for Housing 112 200931560 = indoor exhaust, exhaust port 116. Each of the exhaust ports 116 communicates with the exhaust unit 12B of the exhaust pump or the exhaust fan through the exhaust pipe 118. In this manner, the inside of the casing 112 is introduced into the outside air and the inside of the casing is exhausted, so that the solvent evaporated from the resist coating film RM on the substrate during the drying process is discharged to the outside, and therefore, on the substrate G. The anti-residue coating film RM does not actively impart wind. ❹

立殼體lj2内,滾動輸送路1〇4較佳為調溫成較乾燥用加熱環 土兄HA之溫度為低的溫度。圖示之例中,例如以含冷卻裝置之滾 動調溫部122通過配管124對於殼體112内之各滾子1〇5之内部 循環,給冷卻水,以將滾子1〇5之溫度維持在設定溫度(例如3〇<t 〜40 C)。為了在滾子105之中流過冷卻水,圖示雖省略,係使滾 子105之軸製成中空在内部形成流體通路,並從滾動軸之一端將 冷卻水導入内部流體通路中,並從另一端排出。又,相較於使滾 子105之軸直接接觸基板G,較佳為,使熱傳導率小的材質例如 樹脂構成之多數圓板形輥一體安裝在滾子之軸,並使輥之外周面 接觸到基板G之背面而進行滾動輸送。 圖4中,預烘單元(pre—BAKE)48,與滾動輸送路1〇4接近 而相鄰接之滾子105與滾子105之間,在輸送方向(χ方向)配置著 1 =或排列配置多片作為加熱處理用加熱器之例如平板形護套加 熱器13G。各護套加熱器13G ’在其表面(獅)制如喊包覆, 熱器電源132通過電纜134供給之電力而通電並發熱,將 從該高溫表面放射之熱以極近距離提供給輸送路1〇4上之^'板G。 再者’於預供單元(PRE-ΒΑΚΕ)48,在沿著滾動輸送路1〇4 ’財例如由格柵_成之排氣用吸入頂板(多孔板)136。 該排軋用吸入頂板136’從滾動輸送路104之輸送面夾著既 之間隙,以水平配置,於其背部形成有緩衝冑138。該緩衝室138, ^過排氣管祕⑽,通往具排躲浦或排氣風麟之排氣部 =H送路104上從基板G上之抗姓劑塗布膜 ,条發的洛劑,與周圍空氣一起被吸入到排氣 之中,並送往排氣部142。 _ 15 200931560 又,滾動輸送路104之滾子105,雖圖示省略 固持在固銳例如框架等之軸承,並藉著齒輪機構=== 等傳動機構而連接到電動馬達等輸送驅動源。 一 k罗機構 又,不僅是上述抗蝕劑塗布單元(c〇T)44内 ^ 今單元(VD)46及預供單元(PRE—BAKE)48内之各二吊、$ 示之控制器控制。控制器以微電腦構成時,可藉t 全體之動伸貞序)統籌控制。 卿讀袭置 其次,說明在常壓乾燥單元(VD)46及 BAKE)48之作用。 另早疋(PRE — ❹ ❹ 如上所述,在上游侧鄰之抗蝕劑塗布單元(C(xr 姓劑液之基板G,在常溫及常壓下狀態,從台座8(^之 路換乘載到滾動輸送路104 ’以平流滾動輸送 (VD)46之殼體112内。 疋八吊壓乾各早兀 於殼體112内’在滾動輸送路104上以平流移 Ϊί溫(約2扣之環境遠較為高溫的溫^如_ 接入中,對於基板G上之抗_塗布膜聰表面,直 ^ HA之熱能。該熱能之直接人射,如0 5所示, 會大幅促進抗蝕劑塗布膜RM之表層部的溶劑 從級G上― 冷劑與周圍之空氣混合,而從排氣口 116送往排氣部12〇。 另一方面,隔著基板從底面亦即背側,亦有加埶^琦 熱能到達於基板G上之抗塗布膜RM。但^由=== 材^熱傳導率低,因此,即使加熱環境必1熱能入 土扳G之为面’往基板内側或往基板頂面之埶 =與基板G背面接觸之滾子1()5相較於加熱環g似“低相 虽夕不如說疋調溫在接近常溫之溫度(例如3〇。〇,因此,來自 熱亦小。藉此,如圖5所示,在抗_塗布膜· 或中間層之主體部’溶劑之液相擴散,尤其往揮發方向(上 万)之液相擴散,與搬入殼體112前之狀態亦即置於常溫環境下時 16 200931560 沒有大變化,或僅有些微增大β 盘下爲鋪^麵聰之表層部中,氣相概之速度Vu, 二I j中間層之主體部中液相擴散之速度vL之間,因為vu>Vl 狀===生對差擴大),藉此,能保持主體部之液 狀至半乾狀態,僅使表層部先乾燥硬化。其結果,於常壓之環境 下,燥法時為同質之抗嶋面處理膜。 Ο 熱兄之中而進行常壓乾燥處理,因此,可 不均造成抗·塗布膜腹之乾燥斑。 此情形,;In the vertical casing lj2, the rolling conveyance path 1〇4 is preferably a temperature which is adjusted to a temperature lower than the temperature of the drying ring. In the illustrated example, for example, the rolling temperature adjustment unit 122 including the cooling device circulates the inside of each of the rollers 1〇5 in the casing 112 through the pipe 124, and the cooling water is supplied to maintain the temperature of the roller 1〇5. Set the temperature (for example, 3 〇 < t 〜 40 C). In order to flow the cooling water through the roller 105, although the illustration is omitted, the shaft of the roller 105 is hollow to form a fluid passage therein, and the cooling water is introduced into the internal fluid passage from one end of the rolling shaft, and One end is discharged. Further, in comparison with the axis of the roller 105 being directly in contact with the substrate G, it is preferable that a plurality of disc-shaped rollers made of a material having a small thermal conductivity such as a resin are integrally attached to the shaft of the roller, and the outer peripheral surface of the roller is brought into contact. Rolling is performed on the back surface of the substrate G. In Fig. 4, a pre-bake unit (pre-BAKE) 48 is disposed adjacent to the rolling conveyance path 1〇4 and adjacent between the roller 105 and the roller 105, and arranged in the transport direction (χ direction) 1 = or arranged A plurality of sheets, for example, a flat-plate sheathed heater 13G, which is a heater for heat treatment, are disposed. Each sheathed heater 13G' is coated on its surface (lion), and the heat source 132 is energized and heated by the electric power supplied from the cable 134, and the heat radiated from the high temperature surface is supplied to the conveying path at a very close distance. 1'4 on the ^' board G. Further, in the pre-supply unit (PRE-ΒΑΚΕ) 48, the suction top plate (porous plate) 136 is exhausted along the rolling conveyance path 1〇4, for example, by the grille. The row-receiving suction top plate 136' is disposed horizontally from the conveying surface of the rolling conveyance path 104, and is disposed horizontally, and a buffer weir 138 is formed on the back side thereof. The buffer chamber 138, ^ through the exhaust pipe secret (10), to the exhaust pipe of the exhaust or exhaust air = H delivery path 104 from the substrate G on the anti-surname coating film, the strip of agent It is sucked into the exhaust gas together with the surrounding air, and sent to the exhaust portion 142. _ 15 200931560 Further, the roller 105 of the rolling conveyance path 104 is not shown to be attached to a bearing such as a frame such as a frame, and is connected to a conveyance drive source such as an electric motor by a transmission mechanism such as a gear mechanism ===. The k-role mechanism is not only the controller of each of the above-mentioned units (VD) 46 and the pre-supply unit (PRE-BAKE) 48 in the above-mentioned resist coating unit (c〇T) 44, and the control of the controller is shown. . When the controller is composed of a microcomputer, it can be controlled by the whole process of t. The second reading shows the role of the atmospheric drying unit (VD) 46 and BAKE) 48. Early 疋 (PRE — ❹ ❹ As mentioned above, the resist coating unit adjacent to the upstream side (C (xr is the substrate G of the surname liquid, at normal temperature and normal pressure, from the pedestal 8 (^ road to transfer) The load is carried to the rolling conveyance path 104' in the casing 112 of the advection rolling conveyance (VD) 46. The damper is pressed and dried in the casing 112, and is moved on the rolling conveyance path 104 by an advection. The environment is much higher than the temperature of the high temperature, such as _ access, for the anti-coating film on the substrate G, the surface of the heat, the direct heat of the HA. The direct human radiation of the heat, as shown in 0 5, will greatly promote the resist The solvent in the surface layer portion of the coating film RM is mixed from the stage G to the surrounding air, and is sent from the exhaust port 116 to the exhaust portion 12A. On the other hand, the substrate is separated from the bottom surface, that is, the back side. There is also an anti-coating film RM that is added to the substrate G. However, the thermal conductivity of the material is low. Therefore, even if the heating environment is required, the heat can be applied to the inside of the substrate.顶 of the top surface of the substrate = roller 1 () 5 in contact with the back surface of the substrate G is similar to the heating ring g. "Low phase is better than saying that the temperature is close to the normal temperature ( For example, 3〇.〇, therefore, the heat is also small. Thereby, as shown in Fig. 5, in the anti-coating film or the main portion of the intermediate layer, the liquid phase of the solvent diffuses, especially in the direction of volatilization (tens of thousands). The liquid phase is diffused, and the state before being carried into the casing 112 is placed in a normal temperature environment, and there is no major change in the 16 200931560, or only slightly increased in the surface layer of the surface of the surface. Vu, between the velocity vL of the liquid phase diffusion in the main portion of the intermediate layer of the second I j , because vu > Vl === the difference between the growth and the difference, thereby maintaining the liquid to semi-dry state of the main body portion, only The surface layer portion is first dried and hardened. As a result, in the environment of normal pressure, the drying method is a homogenous anti-kneading treatment film. Ο The internal pressure is dried in the hot brother, so that the coating film can be unevenly formed. Dry spots on the abdomen.

劑塗布膜RM造成不希望&_之虞r;f^A 度例如為贼以下),則溶劑^抗細 η Ι]Γ熱環境似之乾燥作用效果降低。 上之,产,㈣rf =内之滾子1G5調溫在f溫附近或常溫以 m 送路104上以平流移動之狀態,從殼體 燥處理。之後4以==燥單娜6之乾 單元_-_)48之加= 轉魏1L次排腦 -輸;f1G4以紐G,若歓藤單元_ 受放射熱。由於該急速13G使_面接 動輸送並移動之期間升;到既度在輸送路104上滾 —起M到贼用吸人頂板⑶ 於該實施職巾,麵之加_科,即較贿自於護套 17 200931560 加熱器130之熱影響而使得抗蚀劑塗布膜驅之主體部 但因為前步驟常壓乾燥處理形成之表層的硬化層抑^了 2了的傾向,因此在該步驟不容易於抗侧塗布膜職發生乾 單元(PRE—BAKE)48結束預烘處理之基板g,以此狀 滾ΐ輪送路104上進行滾動輸送之平流移動,送往下游侧鄰 之冷部單元(COL)50(圖1)〇 _ ❹ ❹ 如上所述,該實施形態之平流式抗蝕劑處理部(44、46、48), 塗,抗㈣烘烤之—連串處理步_在同 本化"IL進仃。猎此,能達成裝置構成之大幅簡化、小型化及低成 讀申乾燥單元㈣46中’可以對於基板G上之抗餘劑塗布膜 |用¥壓下乾燥處理施加與減壓乾燥同等之抗姓劑表面^ t因此Γ欠步驟之預烘時,不僅抑制主體抗_之流動而減低 ,综斑之發生,尚於顯影處理減少抗_之非溶雜或The coating film RM causes an undesirable & _ 虞 r; f ^ A degree is, for example, thief or less), then the solvent ^ 细 Ι Ι Γ Γ Γ Γ Γ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 On the top, production, (4) rf = roller 1G5 temperature adjustment in the vicinity of f temperature or normal temperature on the m send path 104 in a state of advection movement, from the shell drying treatment. After 4 = = = dry single Na 6 dry unit _-_) 48 plus = turn Wei 1L times the brain - lose; f1G4 to New G, if the vine unit _ received radiant heat. Because the rapid 13G causes the _ surface to be transported and moved during the period of the lift; to the degree of rolling on the transport path 104 - to the thief with the suction top plate (3) in the implementation of the service, the face of the _ section, that is, bribe In the sheath 17 200931560, the heat of the heater 130 causes the resist to coat the main portion of the film, but the hardened layer of the surface layer formed by the normal pressure drying treatment in the previous step has a tendency to be suppressed, so that it is not easy in this step. The substrate g which is subjected to the pre-baking treatment by the anti-side coating film generating unit (PRE-BAKE) 48 is subjected to the advection movement of the rolling conveyance path 104 and sent to the cold-side unit adjacent to the downstream side ( COL) 50 (Fig. 1) 〇 _ ❹ ❹ As described above, the flat flow resist processing unit (44, 46, 48) of this embodiment, coating, anti-(four) baking - a series of processing steps _ in the same "IL into the 仃. In this case, the device structure can be greatly simplified, miniaturized, and low-definition drying unit (4) 46 can be used for the anti-residue coating film on the substrate G. Therefore, when the surface of the agent is pre-baked in the step of depressing, not only the flow of the main body is suppressed, but also the occurrence of the spot is caused by the development treatment to reduce the anti-disinfection or

里,能提升抗蝕劑解像度。又,不需要輸送機器人,不會發生美 板以_对彎曲祕裝載/卸綱發纽置偏離或碰撞、破J Ϊ誤ϋ者’可以不使用支持銷,因此,在常壓乾燥單元(VDH6 内不θ有基板G上之抗蝕劑發生轉印痕跡之虞。此外, 之尺寸,可以在基板各部進行均勻的乾燥處理,因^關 在品質面亦能輕易地因應基板之大型化。 ^,於抗姓劑塗布單元(COT)44在基板G上塗布抗侧液 立即地,在抗姓劑塗布膜RM内開始以自然乾燥進行溶 擴散及氣補散’在常溫、常壓下該等讎會断(持續) 減壓乾燥法中,由於將基板搬入減壓乾燥裝置費時,因此2 乾燥處理開始前,抗侧塗布膜賴過度,有減低減觀燥效 之虞。相對於此,該實施形態中,由於基板從抗蝕劑塗 (COT)44輸送到常壓乾燥單元(ν〇)46能以平流順利地在短時^ 仃,因此,不會延遲利用常壓乾燥單元(VD)46之乾燥處理開始時 200931560 點’能穩定確實地保證塗布膜改質之效果。該點亦能有利地因應 基板之大型化。 以上,已對於本發明之較佳實施形態説明,但是本發明不限 於上述實施形態,可在其技術思想範圍内進行各種變形。 例如,在常壓乾燥單元(VD)46中’於滾動輸送路1〇4上形成 加熱環境HA之機構’不限於上述實施形態之加熱器構造,可採 用任意之加熱器構造。 ❹In it, the resist resolution can be improved. Moreover, there is no need to transport the robot, and there is no need for the US plate to deviate or collide with the bending load/unloading, and the J can be prevented from using the support pin. Therefore, in the atmospheric drying unit (VDH6) The inside of the substrate θ has a transfer mark on the resist on the substrate G. Further, the size can be uniformly dried in each part of the substrate, and the substrate can be easily enlarged in accordance with the quality surface. Applying the anti-side liquid on the substrate G in the anti-surname application coating unit (COT) 44, immediately starting the dissolution and diffusion of the natural drying in the anti-surname coating film RM' at normal temperature and normal pressure.雠 雠 ( (continued) In the vacuum drying method, since it takes time to carry the substrate into the vacuum drying apparatus, the anti-side coating film is excessively applied before the start of the drying process, and the drying effect is reduced. In the embodiment, since the substrate is transported from the resist coating (COT) 44 to the atmospheric pressure drying unit (ν〇) 46, the flat flow can be smoothly performed in a short period of time, and therefore, the atmospheric pressure drying unit (VD) is not delayed. 46 drying treatment starts at 200931560 points 'can be stable and sure The effect of modifying the coating film is ensured. This point can also be advantageously adapted to the size of the substrate. The above has been described in terms of preferred embodiments of the present invention, but the present invention is not limited to the above embodiment, and can be carried out within the scope of the technical idea thereof. For example, the mechanism for forming the heating environment HA on the rolling conveyance path 1〇4 in the atmospheric pressure drying unit (VD) 46 is not limited to the heater structure of the above embodiment, and any heater structure may be employed.

一或者二取代在滾動輸送路1〇4上形成加熱環境ha,如圖6所 示,可沿著滾動輸送路1〇4在其上方設置紅外線加熱器144,利用 ^外線加糾144朝著滚輸送路1G4上之基板G照射既定波 長’亦即容易由抗賴塗布膜腿吸收且不易被基板〇吸收波長 ,紅外線或遠紅外線。於該情形,可以設置反射板146,用以將放 1=車f紅外線加熱器144更為上方之紅外線反賴滾動輸送路 乾燥;擴ϋΐ,主體部之液狀至半乾狀態,僅使表層部先 Γ果,能於常壓之環境下,與使用減壓乾燥法之情 丄:成;·裒與送請之 劑塗布膜RM在實質上無風狀態二。姓 易風壓 路上之魏加熱对^熱枝與上着郷紅平流輸送 置1 L ,亦可採用:沿著滾動輸送賴4林上方配 ί二r上嘴),細_嘴從上方朝 基板G給予乾_之㈣⑽如空氣、氣氣 19 200931560 .St 乾制㈣之溫度奴成魅加熱溫度(例如 50C以上),為暖風。理所當然,利用風於 : 強弱容易在抗钱劑塗布膜RM之表面發生乾由於^ 重地管理風速或風壓均勻性。該氣體吹送方式,當⑭可以鱼j 述紅外線加熱方式或平流輸送路上之環境加熱方式併” 又,圖示雖省略,亦可在常壓乾燥單元(VD)46内 (PRE-BAKE)48内中,將滾動輸送路1G4 = 座。在常壓乾燥單元⑽46設置上浮台座時2 丁 上尸樣之加熱環境HA。概情形,較佳為將上ί © 頂面調溫為較加熱環境HA適度低之溫度。 ^發明之雜乾驗’―般適用在正型抗侧,但亦可靡用 在負型抗蝕劑,亦可用在彩色抗蝕劑或有機抗蝕劑等。 〜 本發明之中,被處理基板不限於LCD賊璃基板,也可 平=不器用基板,或半導體晶圓、CD基板、光罩、印刷基板 處理液亦不限於減舰,可為例如和絶緣 材料、配線材料等的處理液。 【圖式簡單說明】 圖1顯示可應用本發明之塗布顯影處理系統之構成俯視圖。 圖2顯示上述塗布顯影處理系統中,處理步驟之流程圖。 圖3顯示實施形態中,抗蝕劑處理部之全體構成俯視圖。 圖4顯示實施形態中,常壓乾燥單元及預烘單元之構成侧面 5 〇 圖5顯示實施形態中,常壓乾燥法作用之示意概略剖面圖。 圖6顯示實施形態之一變形例之常壓乾燥單元構成示意側面 【主要元件符號說明】 A'B線 20 200931560 AD黏附單元 ‘ AP 檢查單元 C 匣盒 COL冷卻單元 COT抗蝕劑塗布單元 DEV顯影單元 EE 周邊曝光裝置 E-UV準分子UV照射單元 G 基板 HA加熱環境 Ό I/F界面站 IN PASS 搬入單元 OUT PASS搬出單元 PASS 傳遞單元 POST-BAKE後烘單元 PRE-BAKE 預烘單元 R/S旋轉台座 RM塗布膜 SCR擦磨清潔單元 〇 TITLER 印字曝光機 VD 常壓乾燥單元 10 塗布顯影處理系統 12 曝光裝置 14 匣盒站(C/S) 16 處理站(P/S) 18 界面站(I/F) 20 匣盒台座 22 輸送機構 22a 輸送臂 21 200931560 24 搬入單元(IN MSS) 26 清潔處理部 28 第1熱處理部 30 塗布處理部 32 第2熱處理部 34 第1平流輸送路 36 準分子UV照射單元(E-UV) 38 擦磨清潔單元(SCR) 40 黏附單元(AD)One or two substitutions form a heating environment ha on the rolling conveyance path 1〇4, and as shown in FIG. 6, an infrared heater 144 may be disposed above the rolling conveyance path 1〇4, and the correction is performed by using the external line plus correction 144. The substrate G on the transport path 1G4 is irradiated with a predetermined wavelength 'i. That is, it is easily absorbed by the anti-coating film leg and is not easily absorbed by the substrate 波长 wavelength, infrared rays or far infrared rays. In this case, a reflector 146 may be provided for drying the infrared light above the 1=car f infrared heater 144 against the rolling conveyance path; expanding, the liquid to semi-dry state of the main body portion, only the surface layer The first fruit can be used in a normal pressure environment, and the use of decompression drying method: ;; 裒 and the agent coating film RM in a substantially windless state II. The surname of Yi Feng pressure on the road is heated to ^ hot branch and on the blush on the flat flow transport 1 L, can also be used: along the rolling transport Lai 4 above the forest with ί二r upper mouth), fine _ mouth from the top towards the substrate G gives dry _ (four) (10) such as air, gas 19 200931560 .St dry (four) temperature slave temperature heating temperature (for example, 50C or more), for warm air. Of course, the use of the wind: strong and weak is easy to dry on the surface of the anti-money agent coating film RM due to the management of wind speed or wind pressure uniformity. In the gas blowing method, the infrared heating method or the ambient heating method on the advection conveying path can be described as "14", and the illustration may be omitted in the normal pressure drying unit (VD) 46 (PRE-BAKE) 48. In the middle, the rolling conveyor 1G4 = seat. When the floating pedestal is installed in the atmospheric drying unit (10) 46, the heating environment HA of the corpse is taken. In general, it is preferable to adjust the temperature of the upper surface to a moderate temperature of the heating environment HA. Low temperature. ^Inventive miscellaneous test 'Generally applicable to positive side anti-side, but can also be used in negative resist, can also be used in color resist or organic resist, etc. ~ The present invention The substrate to be processed is not limited to the LCD thief substrate, and may be a flat substrate, or a semiconductor wafer, a CD substrate, a photomask, or a printed substrate processing liquid, and is not limited to a reduced ship, and may be, for example, an insulating material or a wiring material. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a configuration of a coating and developing treatment system to which the present invention can be applied. Fig. 2 is a flow chart showing a processing procedure in the above coating and developing treatment system. Fig. 3 shows an embodiment of the present invention. Corrosion treatment department Fig. 4 shows a schematic side view of the normal pressure drying unit and the pre-drying unit in the embodiment. Fig. 5 is a schematic cross-sectional view showing the action of the atmospheric pressure drying method in the embodiment. Fig. 6 shows a modification of the embodiment. Example of the atmospheric drying unit constitutes a schematic side [Main component symbol description] A'B line 20 200931560 AD adhesion unit 'AP inspection unit C 匣 box COL cooling unit COT resist coating unit DEV development unit EE Peripheral exposure unit E-UV Excimer UV irradiation unit G Substrate HA heating environment Ό I/F interface station IN PASS Loading unit OUT PASS carrying out unit PASS Transfer unit POST-BAKE post-drying unit PRE-BAKE Pre-drying unit R/S rotating pedestal RM coating film SCR grinding Cleaning unit 〇TITLER Printing exposure machine VD Normal pressure drying unit 10 Coating development processing system 12 Exposure unit 14 匣 box station (C/S) 16 Processing station (P/S) 18 Interface station (I/F) 20 台 box pedestal 22 Transport mechanism 22a Transport arm 21 200931560 24 Carry-in unit (IN MSS) 26 Cleaning processing unit 28 First heat treatment unit 30 Coating processing unit 32 Second heat treatment unit 34 First advection transport path 36 Excimer UV Irradiation Unit (E-UV) 38 Abrasive Cleaning Unit (SCR) 40 Adhesion Unit (AD)

42 冷卻單元(COL) 44 抗蝕劑塗布單元(COT) 46 常壓乾燥單元(VD) 48 預烘單元(PRE—BAKE) 50 冷卻單元(COL) 52 傳遞單元(PASS) 54 顯影單元(DEV) 56 後烘單元(POST —BAKE) 58 冷卻單元(COL) 60 檢查單元(AP) 62 搬出單元(OUT—PASS) 64 第2平流輸送路 66 第3熱處理部 68 辅助輸送空間 70 穿梭機構 72 輸送裝置 74 旋轉台座(R/S) 76 周邊裝置 80 上浮台座 82 基板輸送機構 22 200931560 84 抗蝕劑喷嘴 86 喷嘴重清部 88 氣體噴射孔 90A 、90B 導軌 92 滑動機構 94 噴嘴支持構件 96 支柱構件 98 預備注給處理部 100 喷嘴浴 102噴嘴清潔機構 ^ 104滾動輸送路 105 滾子 106護套加熱器 108加熱器電源 110 電纜 112殼體 114 空氣導入口 116排氣口 118排氣管 Ο 120排氣部 122 滚動調溫部 124 配管 130護套加熱器 132加熱器電源 134 電纜 136排氣用吸入頂板(多孔板) 138該缓衝室 140排氣管或排氣路 142排氣部 23 200931560 144紅外線加熱器 146反射板42 Cooling unit (COL) 44 Resin coating unit (COT) 46 Atmospheric drying unit (VD) 48 Pre-bake unit (PRE-BAKE) 50 Cooling unit (COL) 52 Transfer unit (PASS) 54 Development unit (DEV) 56 Post-drying unit (POST-BAKE) 58 Cooling unit (COL) 60 Inspection unit (AP) 62 Carry-out unit (OUT-PASS) 64 Second advection conveying path 66 Third heat-treating unit 68 Auxiliary conveying space 70 Shuttle mechanism 72 Conveying device 74 Rotating pedestal (R/S) 76 Peripheral device 80 Floating pedestal 82 Substrate conveying mechanism 22 200931560 84 Resist nozzle 86 Nozzle refining part 88 Gas injection hole 90A, 90B Guide 92 Sliding mechanism 94 Nozzle support member 96 Pillar member 98 Preparation Injection processing unit 100 Nozzle bath 102 Nozzle cleaning mechanism ^ 104 Rolling conveyance path 105 Roller 106 Sheath heater 108 Heater power supply 110 Cable 112 Housing 114 Air introduction port 116 Exhaust port 118 Exhaust pipe Ο 120 Exhaust portion 122 rolling temperature control unit 124 piping 130 sheath heater 132 heater power supply 134 cable 136 exhaust suction top plate (multiwell plate) 138 the buffer chamber 140 exhaust pipe or exhaust passage 142 exhaust portion 23 200931560 144 infrared Heat reflecting plate 146

Claims (1)

200931560 十、申請專利範圍: 1.一種常壓乾燥裝置,包含: 平流輸送部,將塗布有含溶劑之處理液的被處理基 輸送路上進行平流輸送; 炊於既疋 乾燥處理部,於該平流輸送巾,在常壓環境τ,_ 上之處理液之塗布膜提供使其表層部加熱為較下層部更 量’使該塗布膜乾燥。 内/皿之月b 〇 ❹ 划目i如㈣專利範圍f 1項之常壓乾燥裝置,其中,該乾焊處理 部具有用⑽該輸送路上之環境加熱的加熱器。 —處理 3如如申請專利範圍第2項之常壓乾燥裝置,其中,具 該加熱裔之放射熱所及之既定區間之該輸送路的殼體。 4·如巾請專利範圍第3項之f壓乾燥裝置,其中, t氣用以將外部空氣導入至該殼體内;及排氣部,用以將^ 5.如申料利範圍第4項之常麗乾燥裝置,其中,在該 内,對於該基板上之塗布膜形成實質上無風狀態。 以成 φ 專利範圍第2至5項中任一項之常壓乾燥襄置,盆 中,由弋熱器所加熱之該輸送路上之環境溫度為Wc , 度為=娜6㈣觀繼,針,該環境之溫 中,細第1至5射任—狀倾絲裝置,盆 紅外線加熱器將容易被 板吸收之奴讀布朗錢且不易被該基 中,專利範圍第l至5項中任一項之常壓乾燥裝置,其 上以嘴’該氣體噴嘴對於在該輪送路 絲上之塗雜,從上方吹送暖風。 申,月專利範圍第!至5項中任一項之常壓乾 盆 ’八调溫部’該調溫部將與該輸送路之該基板接觸^接近^ 25 200931560 零件調整為既定溫度。 u.如申請專利範圍第10項之常壓乾焊梦 路調整之邮,缺常溫純㈣城^置^巾,將該輸送 以如申請專利範圍第項中任! 向以固《隔树滾路該軸輪送耗在絲之輸送方 13. —種基板處理裝置,包含· 至5項中任—項之常壓乾燥裝置; ❹ ❹ 游侧鄰布輸送方向配置在該常壓乾縣置之上 基輸送方向配置在該常壓乾燥裝置之下 游側鄰,將該基板-面以平流輸送—面進行加熱。 14. 一種基板處理方法,包含以下步驟· ίΐίϊ 塗布含有溶劑之處理液; 輸4 3壓輸送路上平流輸送,並於該平流 部加熱為較下層部更為高_量,时該塗^^^、表層 驟中範項之基板處理方法,其中、,該乾燥步 驟中,該輸达路上之裱境實質上維持無風狀態。 16. 如^請專利範圍第14或15項之基板處理方法,豆中,該 乾燥步驟中,將該輸送路上之環境以加熱器加埶。 17. 如申請專纖圍第16項之基板處理方法、 路上之環境之溫度在4G°〇X_L。 18. 如申請專利翻第17項之基板處理方法 路上之環狀錢在60。(:社。 〃 τ β狀 19. 如申請專利範圍第14 $ 15項之基板處理方法,其中,將 雜送路之^該基板接觸或紐之部分,調溫為 於該環境溫度之溫度。 Φ1 U 20. 如申請專利範圍第14或15項之基板處理方法,其中,該 26 200931560 塗布步驟巾’-面賴基板在與雜祕料之 進打平流輸送,一面利用長形處理液喷 ]輪送路上 液,而在該基板上形成該處理液之基板噴吐該處理 21.如申請專利範圍第14 且 有烘烤步驟,係在該紐牛 項之基域理方法’其中,具 基板-面在與該;該基板之密合性,而將該 加熱。 、 I側輪送路上平流輪送一面進行 ❹ 十一、圖式 ❹ 27200931560 X. Patent application scope: 1. An atmospheric pressure drying device comprising: an advection conveying unit for advancing the treated substrate coated with a solvent-containing treatment liquid; and arranging the drying treatment unit for the advection In the transporting towel, the coating film of the treatment liquid in the normal pressure environment τ, _ is supplied so that the surface layer portion is heated to a larger amount than the lower layer portion to dry the coating film. (4) The atmospheric drying apparatus of the patent range f1, wherein the dry welding processing portion has a heater heated by (10) the environment on the conveying path. - Process 3 The atmospheric pressure drying apparatus according to the second aspect of the patent application, wherein the housing of the conveying path of the heating zone of the heating element is in a predetermined section. 4. For the towel, please refer to the f-pressure drying device of the third item of the patent scope, wherein the t gas is used to introduce outside air into the casing; and the exhaust portion is used for the purpose of In the case of the Changli drying apparatus, the coating film on the substrate is substantially free of wind. The atmospheric pressure drying device of any one of the second to fifth aspects of the φ patent range, in the basin, the ambient temperature of the conveying road heated by the heat exchanger is Wc, the degree is = Na 6 (four) observation, needle, In the warmth of the environment, the fine first to fifth shot-like tilting device, the basin infrared heater will be easily absorbed by the board to read the Brown money and is not easy to be used in the base, any of the patent scopes 1 to 5 The atmospheric pressure drying device of the present invention is characterized in that the gas nozzle blows the warm air from above with respect to the coating on the wire of the wheel. Shen, the monthly patent range! The atmospheric pressure drying basin of any one of the five items, the eight temperature regulating portion, is in contact with the substrate of the conveying path, and the parts are adjusted to a predetermined temperature. u. For the postal adjustment of the atmospheric pressure dry welding dream road of the 10th item of the patent application, the normal temperature is pure (four) city ^ set the towel, the delivery is as in the scope of the patent application scope! The shaft wheel is fed by the wire conveying device. 13. The substrate processing device includes an atmospheric pressure drying device of any one of the five items; ❹ ❹ the side conveyor direction of the side is disposed in the atmospheric pressure county The upper base conveying direction is disposed adjacent to the downstream side of the atmospheric pressure drying device, and the substrate-surface is heated by the advection conveying surface. 14. A substrate processing method comprising the steps of: coating a treatment liquid containing a solvent; advancing the transport on a transport line of 4 3 pressure, and heating at the advection portion to a higher level than the lower layer portion, when the coating is ^^^ The method for processing a substrate in a surface layer, wherein, in the drying step, the dilemma on the transport path substantially maintains a windless state. 16. In the case of the substrate processing method of the invention of claim 14 or 15, in the drying step, the environment on the conveying path is heated by a heater. 17. For the substrate processing method of the 16th item of the special fiber, the temperature of the environment on the road is 4G°〇X_L. 18. If you apply for a patent, turn the substrate processing method on item 17. The ring money on the road is 60. (: 社. τ θ β shape 19. The substrate processing method of claim 14th, wherein the substrate is contacted or the portion of the substrate is tempered to a temperature at the ambient temperature. Φ1 U 20. The substrate processing method according to claim 14 or 15, wherein the 26 200931560 coating step towel--surface substrate is transported in parallel with the secret material, and the long-shaped treatment liquid is sprayed on the side] The substrate is sprayed on the substrate, and the substrate on which the treatment liquid is formed is ejected. The treatment is as described in claim 14 and has a baking step, which is in the base method of the New Zealand item, in which the substrate is provided. The surface is in contact with the substrate; the heating is performed on the I-side wheel, and the I-round is sent to the side of the wheel.
TW097130022A 2007-09-19 2008-08-07 Normal pressure drying device, substrate processing apparatus and substrate processing method TWI376761B (en)

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