TW200929207A - Cleaning method of heat mode type recording material layer, bumpy product manufacturing method, light emitting device manufacturing method, and optical device manufacturing method - Google Patents

Cleaning method of heat mode type recording material layer, bumpy product manufacturing method, light emitting device manufacturing method, and optical device manufacturing method Download PDF

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Publication number
TW200929207A
TW200929207A TW097139385A TW97139385A TW200929207A TW 200929207 A TW200929207 A TW 200929207A TW 097139385 A TW097139385 A TW 097139385A TW 97139385 A TW97139385 A TW 97139385A TW 200929207 A TW200929207 A TW 200929207A
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Taiwan
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material layer
recording material
layer
light
liquid
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TW097139385A
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Chinese (zh)
Inventor
Yoshihisa Usami
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Fujifilm Corp
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Publication of TW200929207A publication Critical patent/TW200929207A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/268Post-production operations, e.g. initialising phase-change recording layers, checking for defects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Led Devices (AREA)

Abstract

A cleaning method of a heat mode type recording material layer is provided for eliminating foreign particles (D) generated when a plurality of concave portions (15) is formed by irradiating a focused light on a heat mode deformable recording material layer (12). The cleaning method is characterized by eliminating the foreign particles (D) with liquid (L) unreacted with the recording material layer (12). The cleaning method is applicable to a bumpy product manufacturing method, a light emitting device manufacturing method, and a optical device manufacturing method.

Description

200929207 九、發明說明: 【發明所屬之技術領域】 本發明是關於一種用於去除於熱模式型記錄材料層上 形成凹部時所產生的異物的熱模式型記錄材料層的清潔方 法、使用此方法的凹凸製品的製造方法、發光元件的製造 方法以及光學元件的製造方法。 【先前技術】 先刖’作為在光碟(〇pticaI disk)、用以製造光碟的母 盤、或發光面上形成有凹凸的發光元件等預定對象物上形 ,凹凸的方法,例如已知有如曰本專利特開平7 _〗6丨〇 8 〇號 公報所示的使用光阻劑(ph〇t〇resist)的方法。具體而言, 此方法是藉由進行如下倾秘母盤上形細凸、:於母°盤 阻劑·畔驟;藉由雷射光對光聞進行曝光 ,藉由顯影液去除曝光部分而形成預定的凹部 的'“步驟;藉由反應輯子則(峨 (以下,亦稱為「跳」)f子母盤進行韻刻的侧 及剝離殘留的光阻劑的剝離步驟。 但是,作為形成凹凸的方法,本 優於利用光阻劑及跪的先前技術的方法:、且體而ί二 方法是使用藉由照射經聚集的雷射匕 阻材料,來代替上述光阻劑,而進行二賊式光 方法,僅照射雷射光即可於其照射部八二士 、。根由此 需如上述先前技術的顯影步驟,可謀=成凹部’故而無 然而,於上述使用熱模式光阻材料=3時=射雷 c 200929207 射光的4刀疋藉由發生分解 或物理變化而形忐—& 汁爭軋化、飛散等化學及/ 若異物殘留於形成:熱 在其後無法良好地進行 =上的八的周圍,則存 的問題。 人 …、法形成良好的凹凸形狀 使藉另丄==!考慮不進行上蝴,而是 異物殘留於穴的周圍,則述情況下,若如上所述 的問題。 、’、子在…法形成良好的凹凸形狀 【發明内容】 =此’本發明的目的在於提供一種藉由去除於敎模式 =錄材料層上形成凹部時所產生的異形成= =二凸形,熱模式型記錄材料層的清潔方 ”凸製品的製造方法、發光元件的製造方法以及光 學元件的製造方法。 久九 f決上述課題的本购是關於—種熱模式型記錄材料 層的 >月潔方法,其是用於去除於可進行熱模式的變形的圮 錄材料層上藉由照射經聚集的光而形成多個凹部時所產生 的異物’其特徵在於利用不與記錄材料層發生反應的液 去除異物。 根據本發明’即使由於對記錄材料層照射經聚集的光 來形成凹部而產生異物,此異物亦可利用液體來去除。此 時,由於祕林記錄_層發生反應,故而凹部以外的 200929207 ===::=形成良 罩钕刻時’記錄材料層亦可良好地 功能,故而可於成為軸情的部位形成良好 另外,於本發明中,可將形成上述 上述;㈣:嫌為大於等於。场且小於等於;= ❹ Ο -於是在形成凹部後經過大於等於0.1秒再進 ^異物的去除,故而可充分冷卻形成有凹 = =_部:,。另外,藉由於形成凹部 上,故而可利用液體良好地去J物物固者於記錄材料層 备=發明中’上述液體亦可含有烴系溶劑、敦 糸洛劑以及水中的至少一種而構成。 另外,於本發明中,亦可藉由為 述記錄材料層上後,使上述記錄材芦^^至士 :上述液體將上述異物自上述=;層洗: 外側。 由此’藉由在將液體供給至記錄材料層上後,使記錄 ^枓層旋轉、’記錄材料層上的液體會因離心力而自内侧移 f外侧。並且’由於利用如此而移動的液體將異物自内 侧沖洗至外側,故而可將異物自記錄材料層上良好地去除。 另外,於本發明中,亦可使上述記錄材料層沿其表面BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a thermal mode type recording material layer for removing foreign matter generated when a concave portion is formed on a thermal mode type recording material layer, using the method A method for producing an uneven product, a method for producing a light-emitting element, and a method for producing an optical element. [Prior Art] As a method for forming a predetermined object such as a light-emitting device (such as a 〇pticaI disk), a master for manufacturing an optical disk, or a light-emitting element having irregularities formed on a light-emitting surface, for example, a method is known. The method of using a photoresist (ph〇t〇resist) shown in the publication of Japanese Patent Laid-Open No. Hei. Specifically, the method is formed by performing a thin convex shape on the master disk as follows: a mother resisting agent and a side step; exposing the light by laser light, and removing the exposed portion by the developer a step of "predetermined recess"; a step of removing the remaining photoresist by the reaction of the sub-master of the f-master (hereinafter, also referred to as "jump"). The method of concavities and convexities is superior to the prior art method using a photoresist and a crucible: and the second method is to replace the above-mentioned photoresist by irradiating the collected laser barrier material, and performing two In the thief-type light method, only the laser light can be irradiated in the illuminating part of the occupant. Therefore, the development step of the prior art as described above can be made into a concave portion. However, the above-mentioned thermal mode photoresist material is used. 3 o'clock = shooting thunder c 200929207 The 4 knives of the illuminating light are shaped by decomposition or physical changes - & chemistry and other chemicals are left in formation: if the heat does not proceed well afterwards = On the top of the eight, there is a problem. People ..., the method forms a good concave-convex shape so that it is considered to be not smashed, but the foreign matter remains around the hole, and in the case of the above, the problem is as described above. Good concave-convex shape [Summary of the Invention] = This is an object of the present invention to provide a hetero-patterned == di-convex shape formed by removing a defect formed on a 敎 mode = recording material layer, a thermal mode type recording material layer A method for producing a cleaning product, a method for producing a light-emitting device, and a method for producing an optical device. The present invention relates to a method for producing a thermal pattern-type recording material layer, which is used for The foreign matter generated when the plurality of concave portions are formed by irradiating the collected light on the recording material layer which is deformed in the thermal mode is characterized in that the foreign matter is removed by the liquid which does not react with the recording material layer. According to the present invention, even if foreign matter is generated by forming a concave portion by irradiating the recording material layer with the collected light, the foreign matter can be removed by using a liquid. At this time, since the secret forest recording_layer occurs Therefore, 200929207 ===::= other than the recessed portion, when the mask is formed, the recording material layer can function well, so that it can be formed well in the axial direction. In the present invention, the above-mentioned (4): The suspicion is greater than or equal to. The field is less than or equal to; = ❹ Ο - Then, after the concave portion is formed, the removal of the foreign matter is performed after 0.1 second or more, so that the concave portion can be sufficiently cooled to form a concave ==_ portion:, in addition, By forming a concave portion, it is possible to use a liquid to satisfactorily remove the J material in the recording material layer. In the invention, the liquid may be composed of at least one of a hydrocarbon solvent, a Dunlopal agent, and water. In the present invention, after the recording material layer is described above, the recording material may be re-coated with the liquid from the above-mentioned layer; Thus, by supplying the liquid onto the recording material layer, the recording layer is rotated, and the liquid on the recording material layer is displaced from the inside by the centrifugal force. Further, since the foreign matter is washed from the inner side to the outer side by the liquid thus moved, the foreign matter can be favorably removed from the recording material layer. In addition, in the present invention, the recording material layer may be along the surface thereof.

根據本發明,由於是利用不與記錄材料層發生反 液體來去除於賴式型記騎料層均成㈣叫所產^ 異物’故而可形成良好的凹凸形狀。 、 為讓本發明之上述和其他目的、特徵和優點能更明顯 下下文特舉較佳實施例,並配合所附圖式,作詳細說 200929207 方疋轉,並且向此記錄材料層的一部分供給上述液體,藉此 利用上述液體將上述異物自上述記錄材料層的内側沖洗至 外側。 由此’將液體供給至記錄材料層的旋轉中心附近的部 位’即可使液體遍布記錄材料層的整個面,故而可減少塗 附於記錄材料層的整個面上的液體的量。另外,藉由旋轉 而使液體移動,藉此可沖洗掉附著在記錄材料層上的異 物。因此,以上述方法對記錄材料層的整個面塗附液體時, 疋同%進行塗附步驟與沖洗異物的步驟,故而可謀求縮短 清潔時間。 —另外,於本發明中,沖洗掉上述異物後,亦可藉由繼 續疑轉上述記錄材料層而使上述記錄材料層乾燥。 由此,由於疋糟由自記錄材料層上沖洗掉異物後仍繼 續旋轉而進行賴,故而與沖洗掉異物後停止旋轉而使之 自然乾燥的方法相比,可迅速地使記錄材料層乾燥。According to the present invention, it is possible to form a good uneven shape by removing the liquid material from the recording type material layer and removing the material of the Lai type type. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the preferred embodiments of the invention. The liquid is thereby washed from the inside of the recording material layer to the outside by the liquid. Thus, the supply of the liquid to the portion near the center of rotation of the recording material layer allows the liquid to spread over the entire surface of the recording material layer, so that the amount of liquid applied to the entire surface of the recording material layer can be reduced. Further, the liquid is moved by the rotation, whereby the foreign matter adhering to the recording material layer can be washed away. Therefore, when the liquid is applied to the entire surface of the recording material layer by the above method, the coating step and the step of rinsing the foreign matter are carried out in the same manner, so that the cleaning time can be shortened. Further, in the present invention, after the foreign matter is washed away, the recording material layer may be dried by continuing to suspect the transfer of the recording material layer. As a result, since the slag is continuously rotated after the foreign matter is washed away from the recording material layer, the recording material layer can be quickly dried as compared with the method of rinsing off the foreign matter and stopping the rotation to naturally dry it.

此外,如上所述的本發明的熱模式型記錄材料層的清 财法,可祕光碟或半導财凹凸製品的製造方法、發 光几件的製造方法、或光學元件的製造方法。 X 200929207 c 【實施方式】 [第1實施形態] • 其次,一邊參照圖式一邊對本發明的發光元件的製造 . 方法加以說明。 .如圖1 (a)所示’作為本實施形態的發光元件的發光 •二極體(Li幽 Emitting Diode,LED )封裝體(package )丄,Further, the above-described method for cleaning a heat mode type recording material layer of the present invention is a method for producing a compact or semi-conductive concave-convex product, a method for producing a light-emitting member, or a method for producing an optical element. X 200929207 c [Embodiment] [First Embodiment] Next, a method of manufacturing a light-emitting element of the present invention will be described with reference to the drawings. As shown in Fig. 1 (a), as a light-emitting element of the present embodiment, a light-emitting diode (LED) package is used.

具備作為發光體的一例的LED元件1〇,及用於將此lED 參 元件10固定、配線的盒體(case) 2〇。 LED元件1〇為先前眾所周知的元件,詳細情況並未 圖示,但具有n型披覆層(claddinglayer)'p型披覆層以 及活性層等。於圖i⑷中,上側的面是向外部發出光的 . 發光面18。 盒體20上固定有LED元件10。盒體20上形成有向 LED元件1〇供給電力的配線21、22等。 如圖1 (b)所示,LED元件1〇依序具有:作為用於 發光的本體部分的發光部n、形成在發光部η的上表面 ❹ (發光面18)的記錄材料層12、及障壁(barrier)層13。 $錄材料層12是可藉由照射強絲將祕換成熱並 • 湘此熱使材料產生變形而形細部的層,即所謂熱模式 錄材料的層。上述記錄材料在絲錢於光記^碟片 等的記錄層,例如可使用:菁(cyanine)系、酞菁 (phthalocyanine)系、酿(quin〇ne)系、方酸(零aryHum) 系、莫鐺(azulenimn)系、硫醇(thi〇1)錯鹽系、部花青 (merocyanine )系等的記錄材料。 200929207 錄物,的色錄材料層12較好的是含有色素作為記 舉色3有料層12中所含有的記錄物質,可列 並不㈣於有機材料,可使用㈣層12的材料, 機材料的複合材料。其中,若機:、或無婦料與有 t)容易成膜,衮:鐘、;斗’則藉由旋塗(spin eAn LED element 1A as an example of an illuminant and a case for fixing and wiring the lED gin 10 are provided. The LED element 1 is a previously known element, and is not shown in detail, but has an n-type cladding layer 'p-type cladding layer, an active layer, and the like. In Fig. i(4), the upper surface is a light-emitting surface 18 that emits light to the outside. The LED element 10 is fixed to the casing 20. Wirings 21, 22, and the like for supplying electric power to the LED element 1A are formed in the casing 20. As shown in FIG. 1(b), the LED element 1 has, in order, a light-emitting portion n as a body portion for light emission, a recording material layer 12 formed on an upper surface ❹ (light-emitting surface 18) of the light-emitting portion η, and Barrier layer 13. The recording material layer 12 is a layer which can be changed into heat by irradiating a strong wire and which is deformed by the heat, which is a layer of a so-called thermal pattern recording material. The recording material may be, for example, a cyanine system, a phthalocyanine system, a quinone system, or a squary acid (zero ary Hum) system. Recording materials such as azulenimn, thiol (thi〇1), and merocyanine. 200929207 The color recording material layer 12 of the recorded matter preferably contains a dye as the recording material contained in the material layer 12 of the color 3, which may be listed as (4) for the organic material, and the material of the (four) layer 12 may be used. Composite material. Among them, if the machine: or no maternal and t) easy to form a film, 衮: bell,; bucket' by spin coating (spin e

的是採用二 藉由分子設計來控佩錄量的色素巾,缺的是採用可 2處:作為記錄材料層12的較佳例,可列舉: 色素(菁色素、半花青(hemiCyanine )色素、 本乙烯(styryl)色素、氧喏(〇χ〇 多 =大環狀色素⑽色素、朗(二L=f) =:卜啉(P〇rphyrin)色素等)、偶氮色素(包括偶氮金 屬整5物色素)、亞烯丙基(allylidene)色素、錯合物色素、 香i素(coumarin)色素、唑類(az〇le)衍生物、三嗪類 (triazine)衍生物、μ胺基丁二烯(l amin〇butadiene)衍 生物、肉桂酸衍生物、喹酞酮(quinophthalone)系色素等。 其中,較好的疋藉由雷射光可一次性記錄資訊的色素 型的記錄材料層12。其原因在於··有機物的記錄材料可溶 解於;谷劑中並藉由旋塗或喷塗(SprayC〇at)而形成膜,故 而生產性優異。此色素型的記錄材料層12,較好的是含有 於記錄波長區域具有吸收性的色素。尤其是,表示光的吸 收量的消光係數(extinction coefficient) k值的上限較好的In the case of a pigmented tissue which is controlled by a molecular design to control the amount of the recording, it is not preferable to use two: as a preferred example of the recording material layer 12, a pigment (cyanine pigment, hemiCyanine pigment) is exemplified. , styryl pigment, oxonium (〇χ〇 = = macrocyclic pigment (10) pigment, lang (two L = f) =: porphyrin (P〇rphyrin) pigment, azo pigment (including azo) Metallic pigments, allylidene pigments, complex pigments, coumarin pigments, az〇le derivatives, triazine derivatives, μ amines a derivative of l amin〇butadiene, a cinnamic acid derivative, a quinophthalone-based pigment, etc. Among them, a pigment-based recording material layer capable of recording information at one time by laser light is preferred. 12. The reason is that the recording material of the organic substance is soluble in the granule and the film is formed by spin coating or spray coating (Spray C〇at), so that the productivity is excellent. It is good to have a pigment which is absorptive in the recording wavelength region. In particular, it means light. Yield extinction coefficient (extinction coefficient) of the upper limit value of k is preferably

200929207 是小於等於〗〇,承杯, λ Μ t更好的疋小於等於5,更好的是小於等於 一、疋小於等於】。其原因在於:若消光係數k過高, 錄材料層12的光的入射側到達相反側,而形成 於是的下限值較好的是大於等 D 1。甘庙π ΐ 於等於G.⑽,更好的是大於等於 姑於.右消光係數k過低,則光吸收量降低, 降低Γ x大的雷射功率(iaserpc>wer)’㊉導致加工速度 此外,記錄材料層12如上所述必須於記錄波長下具有 就上述觀點而言,可根據雷射光源的波長而適 备璉擇色素,或者改變構造。 +例如’當雷射光源的振盪波長(oscillation wavelength ) 〇 nm附近時,較為有利的是自五甲川菁(pemamethine cy嶋素、七曱川氧喏(heptamethine 〇χ〇η〇ι)色素、 五曱川氧°若(pentamethine oxonol)色素、酜菁色素、举酞 菁色素等之中進行選擇。 $ 、另外田雷射光源的振堡波長在660 nm附近時,較 為^利的是自三甲川菁(trimethine eyanine)色素、五甲 川氧°若色素、偶氮色素、偶氮金屬錯合物色素、心各甲川 (pyrromethene)錯合物色素等之中進行選擇。 、並且,當雷射光源的振盪波長在405 nm附近時,較 =利的是自f曱川菁色素、單甲川氧喏色素、零曱川部 花月色素、Si;菁色素、偶氮色素、偶氮金屬錯合物色素、 外琳色素、亞烯丙基色素、錯合物色素、香豆素色素、峻 3] 200929207 c 衍生物、三嗪衍生物、苯幷三唑衍生物、1-胺基*Τ’稀衍 生物、嗤駄酮系色素等之中進行選擇。 以下,針對當雷射光源的振盪波長在78〇 ηπι附近(近 紅外雷射波長域)時、在660 nm附近(可見光雷射波長 ❹200929207 is less than or equal to 〇 〇, cup, λ Μ t better 疋 is less than or equal to 5, more preferably less than or equal to one, 疋 less than or equal to 】. The reason for this is that if the extinction coefficient k is too high, the incident side of the light of the recording material layer 12 reaches the opposite side, and the lower limit value formed is preferably larger than the equal D 1 . Gan Temple π 于 is equal to G. (10), and more preferably is greater than or equal to. The right extinction coefficient k is too low, the light absorption is reduced, and the Γ x large laser power is reduced (iaserpc > wer) '10 results in processing speed Further, as described above, the recording material layer 12 must have a recording color at a recording wavelength, and the coloring matter can be appropriately selected depending on the wavelength of the laser light source, or the structure can be changed. + For example, 'When the oscillation wavelength of the laser source is near 〇nm, it is more advantageous from pemamethine cytosine, heptamethine 〇χ〇η〇ι pigment, five曱川氧°If (pentamethine oxonol) pigment, phthalocyanine pigment, phthalocyanine pigment, etc. are selected. When the vibration wavelength of the other field laser source is around 660 nm, it is more favorable from Sanjiachuan. Selection of trimethine eyanine pigment, pentamethine oxygen, azo dye, azo metal complex dye, and pyrromethene complex dye, etc. When the oscillation wavelength is around 405 nm, it is better from f曱chuan cyanine pigment, monomethine oxime pigment, Ziqichuan Chuanhua pigment, Si; cyanine pigment, azo pigment, azo metal complex pigment. , Linlin pigment, allyl dye, complex pigment, coumarin pigment, Jun 3] 200929207 c derivative, triazine derivative, benzotriazole derivative, 1-amino group * Τ 'dilute derivative The substance, the fluorenone dye, and the like are selected. Hereinafter, when the oscillation wavelength of the laser light source is near 78 〇 ηπι (near-infrared laser wavelength range), near 660 nm (visible laser wavelength ❹

域、尤其是紅色雷射波長域)時、在4〇5 nm附近(近紫 外雷射波長域)時’分別列舉記錄材料層12 (記錄層化合 物)的較佳化合物的例子。此處,以下化學式1、2所表示 的物(1_1〜U。)為雷射光源的振盧波長在谓咖 二ϋ的Γ合物。另外’化學式3、4所表示的化合物(W :。進而長在_啦附近時的化合 以及化學式7子=_、6職_化合物(㈣〜m]4) 405 nm附近時:的化合物為雷射光源的振盪波長在 用於記,==此外’本㈣輪定於將此等 物例 > 田射先源的縣波長在780碰附近時的記錄層化合An example of a preferred compound of the recording material layer 12 (recording layer compound) is shown in the case of a region, particularly a red laser wavelength region, in the vicinity of 4 〇 5 nm (near the ultraviolet laser wavelength region). Here, the object (1_1 to U.) represented by the following Chemical Formulas 1 and 2 is a conjugate of a laser light source having a wavelength of a laser light source. In addition, the compound represented by the chemical formulas 3 and 4 (W: and further, when it is grown in the vicinity of _la and the chemical formula 7 = _, 6 _ compound ((4) ~ m] 4) near 405 nm: the compound is a ray The oscillation wavelength of the light source is used for recording, == In addition, this (four) is set to the recording layer combination when the county wavelength of the source is > near the 780 touch.

12 200929207 [化i] (Μ)12 200929207 [化i] (Μ)

(1-5)(1-5)

<雷射光源的振盪波長在780 nm附近時的記錄層化合 物例> 13 200929207 [化2]<Record layer compound when the oscillation wavelength of the laser light source is around 780 nm> 13 200929207 [Chem. 2]

<雷射光源的振盪波長在660 nm附近時的記錄層化合 物例> 14 200929207<Record layer compound when the oscillation wavelength of the laser light source is around 660 nm> 14 200929207

[化3] (H-1)[Chemical 3] (H-1)

<雷射光源的振盪波長在660 nm附近時的記錄層化合 物例> 15 c 200929207<Record layer compound when the oscillation wavelength of the laser light source is around 660 nm> 15 c 200929207

[化4][Chemical 4]

<雷射光源的振盪波長在405 nm附近時的記錄層化合 物例><Record layer compound example when the oscillation wavelength of the laser light source is around 405 nm>

16 20092920716 200929207

[化5][Chemical 5]

<雷射光源的振盪波長在405 nm附近時的記錄層化合 物例> 17 200929207<Record layer compound when the oscillation wavelength of the laser light source is around 405 nm> 17 200929207

[化6][Chemical 6]

CsHn-t (111-13)CsHn-t (111-13)

(111-12)(111-12)

<雷射光源的振盪:波長在405 nm附近時的記錄層化合 物例> [化7]<Oscillation of a laser light source: a recording layer compound when the wavelength is around 405 nm > [Chem. 7]

另外,亦可較好地使用日本專利特開平4-74690號公 報、曰本專利特開平8-127174號公報、曰本專利特開平 11-53758號公報、日本專利特開平11-334204號公報、曰 18 200929207 本專利特開平11.334205號公報 11-334206號公報、日本專利特 曰本專利特開平 本專利特開2000-43423號公報·334207號公報、日 2000-1085Π號公報、以及日本專利π曰,專利特開 報等中所記載的色素。 、肩2卯〇_158818號公 上述色素型的記錄材料層12In addition, Japanese Patent Laid-Open No. Hei 4-74690, Japanese Patent Laid-Open No. Hei 8-127174, Japanese Patent Laid-Open No. Hei 11-53758, and Japanese Patent Laid-Open No. Hei 11-334204,曰18 200929207 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2000-43423, No. 334207, No. 2000-1085 No. The pigment described in the patent publications and the like. , shoulder 2卯〇_158818, the above-mentioned pigment type recording material layer 12

色素與黏合辦—同簡㈣當的成:將 „液塗佈於基板上而形成塗媒1備= 二此時’塗佈塗佈液的面的溫度較好的是ι〇〜 圍。更好的是下限值大於等於l5〇c, 、巳 〇C,牲!?丨丨拉AA S丄λ汾 。 尺好的疋大於等於20 二=的 等於c。另外,作為上限值,更好 於35。〇,更好的是小於等於机,特別好的是 防c。若如此被塗佈面溫度於上述範_,則可 毛生塗佈不均或塗佈故障’而使塗膜的厚度達到均勻。 此外,上述上限值以及下限值可各自任意組合。 田此處,記錄材料層12既可為單層亦可為重疊層,於重 疊層構造的情況下,可藉由進行多次塗佈步驟而形成。、 塗佈液中的色素的濃度一般為0.01〜30 mass% (質量 百分比)的範圍,較好的是0.1〜20 mass%的範圍,更好 的是0.5〜1〇 mass%的範圍,最好的是〇 5〜3 mass%的 圍。 作為塗佈液的溶劑,可列舉:乙酸丁酯、乳酸乙g旨、 乙酸溶纖劑等酯;曱基乙基酮、環己酮、曱基異丁基酮等 二氣甲烷、1,2-二氯乙烷、氯仿等氯化烴;二曱基甲 19 200929207 c 酿胺等醯胺;曱基環己院等烴;四氫B夫喃、乙鍵、二噪烧 等醚;乙醇、正丙醇、異丙醇、正丁醇、二丙酮醇等醇; 2,2,3,3-四氟丙醇等氟系溶劑;乙二醇單甲醚、乙二醇單乙 醚、丙二醇單甲鱗等二醇醚類等。 考慮到所使用的色素的溶解性,上述溶劑可單獨使 用,或者組合使用兩種或兩種以上。塗佈液中,亦可視目 ❹Pigment and Adhesive--Simplified (4) When the liquid is applied to the substrate to form the coating medium 1 = 2 at this time, the temperature of the surface of the coating liquid is preferably ι〇〜围. It is good that the lower limit is greater than or equal to l5〇c, 巳〇C, !!?丨丨拉 AA S丄λ汾. A good ruler is greater than or equal to 20 two = equal to c. In addition, as the upper limit, Better than 35. Oh, better is less than or equal to the machine, especially good anti-c. If the coated surface temperature is above the above-mentioned range, the coating may be unevenly coated or coated. Further, the upper limit value and the lower limit value may be arbitrarily combined. The recording material layer 12 may be a single layer or an overlapping layer, and in the case of an overlapping layer structure, The concentration of the pigment in the coating liquid is generally in the range of 0.01 to 30 mass% (mass%), preferably 0.1 to 20 mass%, more preferably 0.5 to 5. The range of 1 〇mass% is preferably 〇5 to 3 mass%. The solvent of the coating liquid includes butyl acetate and lactic acid. , esters such as cellosolve acetate; dihydromethane such as mercaptoethyl ketone, cyclohexanone or decyl isobutyl ketone; chlorinated hydrocarbons such as 1,2-dichloroethane and chloroform; dimercapto 19 19 200929207 c such as amines such as amines; hydrocarbons such as fluorenylcyclohexyl; tetraethers such as B-butyl, ethyl, and dioxin; alcohols such as ethanol, n-propanol, isopropanol, n-butanol, and diacetone; a fluorine-based solvent such as 2,2,3,3-tetrafluoropropanol; a glycol ether such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether or propylene glycol monomethyl scale; etc. Considering the solubility of the pigment used The above solvents may be used singly or in combination of two or more. In the coating liquid, it may also be visible.

的進而添加抗氧化劑、紫外線吸收劑、塑化劑、潤滑劑等 各種添加劑。 主作為塗佈方法,可列舉:喷霧(spray)法、旋塗法 浸潰(dip)法、輕塗(r〇11 c〇at)法、刮塗⑴地⑺如) 法、刮刀輕(doctorroll)法、刮刀(d〇ct〇rblade)法、翔 2刷(screen print)法等。此外,就生產性優異、容邊 控制膜厚方面而言,較好的是採㈣塗法。 ’ 12 f法進行形成方面而言,記錄材料層 :2 合物)較好的是於有 讀wt%且小於等於3 T合敎於林 wt%且小於等&2〇wf0/ ^更好的是溶解大於等於〇.] 溶解大於等於G5wtyH是於四氟丙醇中’較好的是 化合物之熱分解溫度。另外’記錄層 赋,更好的是大於等於 ^於150 (:且小於等於 塗佈時,塗佈液 c且小於等於40(rc。 好的Η ? 、恤度較好的是23〜5〇°C的r円® :的…。。的範圍’其中特別好的 旋塗首先f邊旋轉—邊將塗佈液噴出至基板上。 20 200929207 時’轉速較好的是20〜700 rPm,更好的是5〇〜5〇 , 更好的是100〜400 rpm。其後’乾燥時的轉速較好的s 〜H)_啊,更好的是1〇〇〇〜7_ _,更好的是疋誦 〜5000 rpm 〇 當塗佈液含有黏合劑時,作為黏合劑的例子, (gelatin),( cellulose } # ❹ ❹ 二i、乙Τ:ίη)、橡膠(gUm)等天然有機高分 ^勿貝4乙稀、聚_、聚苯乙烯、聚異丁烯等煙系樹 月曰,聚虱乙烯、聚偏二氣乙烯、聚氯乙烯_聚乙酸乙烯酯丘 聚物等乙婦糸樹脂,聚丙稀酸^旨、聚甲基 ^ 树月曰衫物轉熱硬 縮合物等合財機高分子。 12的材料時,黏合劑的使用量相對於色素 & = 倍量(質量比)的範圍内,較好的是。^ 倍篁(質量比)的範圍。 里 另外,為了提高記錄材料層12的 12中可含有各種抗褪色劑。 以獨材料層Further, various additives such as an antioxidant, an ultraviolet absorber, a plasticizer, and a lubricant are added. The main coating method may be a spray method, a spin coating method, a dip method, a light coating method, a blade coating method, a blade coating method, and a doctor blade method. Doctorroll) method, scraper (d〇ct〇rblade) method, Xiang 2 brush (screen print) method. Further, in terms of excellent productivity and thickness of the margin control film, it is preferred to adopt a (four) coating method. In terms of the formation of the '12f method, the recording material layer: 2 compound) is preferably in the read wt% and less than or equal to 3 T in the forest wt% and less than equal & 2〇wf0/^ better. The dissolution is greater than or equal to 〇.] The dissolution is greater than or equal to G5wtyH is in tetrafluoropropanol. The preferred thermal decomposition temperature of the compound. In addition, the 'recording layer assignment, more preferably greater than or equal to ^ at 150 (: and less than or equal to coating, coating liquid c and less than or equal to 40 (rc. Good Η?, good shirt is 23~5〇) °C's r円®: The range of '... particularly good spin-coating first f-side rotation--spray the coating liquid onto the substrate. 20 200929207's better speed is 20~700 rPm, more The good is 5〇~5〇, and the better is 100~400 rpm. After that, the 'dry speed is better than s~H)_ ah, better is 1〇〇〇~7_ _, better疋诵~5000 rpm When the coating liquid contains a binder, as an example of a binder, (gelatin), (cellulose } # ❹ ❹ 二i, Τ: ίη), rubber (gUm) and other natural organic high scores ^Bebei 4 Ethylene, Poly-, Polystyrene, Polyisobutylene, etc., such as sulphuric acid, polystyrene, polyvinylidene-ethylene oxide, polyvinyl chloride-polyvinyl acetate, etc. Polyacrylic acid, polymethyl ^ tree moon 曰 物 转 热 热 热 热 热 热 。 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 In the range of, preferably scope Huang ^ fold (mass ratio). In order to improve the recording material layer 12, 12 may contain various anti-fading agent. In single layer of material

作為抗褪㈣,—射使料_氧 。零nq職cher)。作為單線態氧淬 二J 公知Si::書等刊行物中的單線態氧: 號公=:== =開昭― 日·_號公報、日本專利特;^=::開 200929207 _c 曰本專利特開眧60-19587缺\ 士 60-35054號公報、日本專利二報、日本專利特開昭 專利特開昭懸⑼號公^開昭6〇_36190號公報、日本 號公報、日本專利特開日刀6〇4日本專利特開昭60_44554 W“二 4555號公報、曰本專利特η 曰口= 、曰本專利特開昭·_號公: 日本專利特開昭60-54892號 60-47069號公報、日本專利。日本專利特開昭 丄由 J符開昭63-209995號公瀚、口 ❹ ❹ t專f特開平4_25492號公報、日本專利特公平1侧0 、以及日本專利特公平6·26028號公報等各公報, = ^35G399號說明書,叹日本化學作1992年1〇 頁等中所記載的單線態氧淬滅劑。上述單線能 1滅劑,褪色劑的使用量,相對於色素的量 二 的範圍,較好的是Q 5〜45娜%的範圍,更 =疋3〜4。域的範圍’特別好的是5〜25 _s%的 以上,對記錄材料層12為色匈記錄層時的溶劑塗佈 說明,記錄材料層12亦可根據記錄物質的物性, 曰由d、雜(sputtering)、化學氣柄沈積法 vapor deposition,CVD)等成膜法而形成。 此外,色素是使用:於下述凹部ls的加玉中所使用的 :于光的波長下’具有南於其他波長的光吸收率的色素。 尤其是期待於加卫時的雷射光的波長下,光的吸收率高於 led兀件10等發光元件的發光波長下的吸收率。 此色素的吸收峰的波長並不限定在可見光的波長域 22 200929207 内,亦可於紫外域或紅外域中。 ^ =是:於構成發光元件的發光面的材料的折射率高 =下,較好的是構成凹部15的記錄材料層12以= 壁層13的折射率高。 次障 ,素於吸收波長的峰值波長(吨猶心她 波側存在折射率高的波長域,較 ❹ 元件的發光波長重合。為此,=^是使 =^與發光 小於發光元叙h 於一更好的是大於等於、2=差 ^的疋遇大於50 nm。其原因在於:若 =素另的:收;皮長域會靠近發光元件之中^ 一於=nm;f的是小於等 先兀件的光而言,會導致折射率降低。 樹毛 以雷射記錄凹部15的波長又讀 w的關係。其原因在 疋而足Λ a< λ 量合適且記錄效率t tf4,’ %色素岐吸收 較好的^ 成的凹凸形狀。另外, 季::的疋滿UW<AC的關係。其 =收色素的波長,故㈣錢發光元件 光不被色素吸收而裎ίΐ 使發光元件所發出的 就以上觀點而言,認為最好 = 的關係。 ^Aa< Aw< 23 200929207 c 此外,用以形成凹部15的雷射光的波長為可獲得 大雷射功率的波長即可,例如,當記錄材料層12中使用色 素時’較好的是 193nm、210nm、266nm、365 nm、405 nm、 488 nm、532 nm、633 nm、650 nm、680 nm、78〇 nm、83〇 nm等小於等於1000 nm的波長。As anti-fading (four), - shot material _ oxygen. Zero nq job cher). As singlet oxygen quenching, it is known that the singlet oxygen in the publications of Si:: Books and so on: No. =====Zhang Zhao-Japan·_# bulletin, Japanese patent special; ^=::Open 200929207 _c 曰本Japanese Patent No. 60-19587, No. 60-35054, Japanese Patent No. 2, Japanese Patent Special Open Patent, Special Open, No. 9 (No. 9), No. 6 No. _36190, Japanese Gazette, Japanese Patent Special Japanese Knife 6〇4 Japanese Patent Special Open 60_44554 W "No. 4555 Gazette, Sakamoto Patent Special η 曰口 =, 曰本专利特开昭·_号 公: Japanese Patent Unexamined 60-54892 60 -47069, Japanese Patent. Japanese Patent Special Opened by J-Kai Kai-zhao 63-209995, 瀚 ❹ ❹ 专 专 专 特 特 特 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 - Bulletin No. 26028, etc., = ^35G399, sighs the singlet oxygen quencher described in Japanese Chemicals, 1992, pp. 1, et al. The above-mentioned single-line energy killer, the amount of fading agent used, The range of the amount of the pigment 2 is preferably in the range of Q 5 to 45 ny%, more = 疋 3 to 4. The range of the domain is particularly good. It is 5 to 25 _s% or more, and the solvent coating is described when the recording material layer 12 is a color Hung recording layer. The recording material layer 12 may also be d, sputtering, or chemical gas handle depending on the physical properties of the recording material. The film is formed by a film formation method such as vapor deposition (CVD). In addition, the dye is used in a jade in which the concave portion ls is used: a dye having a light absorption rate from other wavelengths at a wavelength of light. In particular, it is expected that the absorption rate of light at a wavelength of laser light at the time of reinforcement is higher than that at the emission wavelength of a light-emitting element such as the LED element 10. The wavelength of the absorption peak of the pigment is not limited to the wavelength of visible light. In the region 22 200929207, it is also possible to be in the ultraviolet region or the infrared region. ^ = Yes: The refractive index of the material constituting the light-emitting surface of the light-emitting element is high = lower, preferably the recording material layer 12 constituting the concave portion 15 is = wall The refractive index of layer 13 is high. The secondary barrier is the peak wavelength of the absorption wavelength (t is conducive to the wavelength domain where the refractive index is high on the wave side, which coincides with the wavelength of the emission of the germanium element. For this reason, =^ is to make =^ and The luminescence is smaller than the illuminating element Is greater than or equal to, 2 = difference ^ is more than 50 nm. The reason is: if = the other: receive; the skin length will be close to the light-emitting element ^ one in = nm; f is less than the first element In terms of light, the refractive index is lowered. The tree hair is recorded by laser as the wavelength of the concave portion 15 and the relationship w is read. The reason is that it is sufficient and the amount of λ is appropriate and the recording efficiency is t tf4, '% pigment absorption A better shape of the concave and convex shape. In addition, the season:: is full of UW < AC relationship. It is the wavelength of the dye, so (4) the light-emitting element light is not absorbed by the pigment, and the light-emitting element is emitted. ^Aa<Aw< 23 200929207 c Further, the wavelength of the laser light for forming the concave portion 15 is a wavelength at which a large laser power can be obtained, for example, when the coloring matter is used in the recording material layer 12, it is preferably 193 nm. Wavelengths of less than or equal to 1000 nm such as 210 nm, 266 nm, 365 nm, 405 nm, 488 nm, 532 nm, 633 nm, 650 nm, 680 nm, 78 〇 nm, and 83 〇 nm.

另外,作為雷射光的種類,可為氣體雷射、固體雷射、 半導體雷射等卜種f射。其中,為了簡化光學系統,較 好的是採帛目體㈣或半導體雷射。雷射統可為連續 光二亦可為脈衝(pulse)光’較好的是採用可自由地改變 發光間隔的f射光。例如,較好的是採时導體雷射^ 無法直接對f射騎開_變(⑽。ffmGdulatk)n)時1 好的是以外部調變元件進行調變。 另外,為了提高加工速度,較好的是雷射功率較 ς 著雷射功率提高,必須提高掃描速度( w記錄㈣層12的速度;例如,下述的光碟酿= ^:lZd:ZTslT>ΒΛ,m4s( sca:) ^上FMi雷射料的上限值較好的是丨⑻w t 10W,更好的是”,最好的是! w。 =限值較好的是〇.lmW,更好的是。.5mw,二力 田耵先較好的是發射波長寬度以及同1 (coherency)優異、可收縮為波長程度的光點大小门厂Further, as the type of the laser light, it may be a gas laser, a solid laser, or a semiconductor laser. Among them, in order to simplify the optical system, it is preferable to pick the object (4) or the semiconductor laser. The laser system may be continuous light or pulse light. It is preferable to use f-light which can freely change the light-emitting interval. For example, it is better that the time-consuming conductor laser ^ cannot be directly applied to the f-shooting (change ((10).ffmGdulatk) n). In addition, in order to increase the processing speed, it is preferable that the laser power is higher than the laser power, and the scanning speed must be increased (w the speed of the (four) layer 12 is recorded; for example, the following disc brewing = ^: lZd: ZTslT> , m4s( sca:) ^ The upper limit of the FMi laser is better than 丨(8)w t 10W, better is ", the best is! w. = the better limit is 〇.lmW, more The good thing is .5mw, the second is better for the light source size of the emission wavelength width and the same (coherency), which can be shrunk to the wavelength.

的光。另外’記錄策略(recording strategy SP 地形成凹部15的光脈衝照射條件)較好的是採用=」 24 cLight. Further, the recording strategy (the light pulse irradiation condition in which the recording strategy SP forms the concave portion 15) is preferably adopted by "" 24 c

200929207 所把用的朿略。即,較好的 度或=;射光的波高值、脈衝寬度等條:用的記錄速 】5的=材梅12的厚度較好的是使之對應於下述凹部 此厚度例如可於卜⑽㈣㈣ 度的Z較好的是大於等…,更好的么:等疋於f〇 因在於:料度過薄,則所形成_部】5較淺, 二2:先學效果。另一原因在於··如下所述,當利用記 ί产二二作為_遮罩時’難以獲得韻刻效果。另外, 厚度的上限較好的是小於等於麵nm,更好 於500 nm。其原因在於:若厚度過厚,則射 率,同時難以形成深的穴,並且加工速度會^的雷射功 另外,記錄材料層12的厚度t與凹部15的直徑 =的是滿足以下關係。即,記錄材料層12的厚度t的上限 疋设為滿足t<:而的值,更好的是設為滿足 i 好!!是設為滿足t<3d的值。另外,記錄材料 曰2的厚度t的下限值較好的是設為滿足的值, 更好的是設為滿足t>d/1〇的值,更好的是設為滿足 =值。此外’如此根據與凹部15的直徑d的_來設定記 錄材料層12的厚度t的上限值以及下限值的原因盘 因相同。 ^、 小 期待凹部的直徑d的上限值小於等於刚_ nm,較 好的是小於等於1_ nm,更好的是小於等於動〇腺。 期待下限值為大於等於l〇nm,較好的是大於等於5〇碰, 25 200929207 c 更好的是大於等於100nm。 八斗錄材料層12時’將成為記錄材料的物質溶解咬 劑中而製備塗佈液後,將此塗佈_ = 光面佈(extmsiGn eGat)等塗佈法塗佈於發 先面1,8的表面,藉此可形成記錄材料層。 # ^ 12 目丨丨廿尨心地5又置。卩早壁層13若為透明的材質, =並無特舰定’較好的是聚碳_、 質 此外,=1使:Sl〇2、9ZnS、Ga0等氧化物、硫化物。 斤。月透明」,是表示可透射LED元件10所菸 出的。ί射率··大於等於_)的程度即視‘日Γ 化性^ 利用如下方式形成··將構成接著層的光硬 ?月•解於合適的溶劑中而製 度下將此塗佈佈在記騎n預疋益 ❹ iiaminate) ^ ! (TAC薄膜),自經積層的ta4 Μ之上方照射光而使塗佈膜 AC溽 =〜=:範r。3,,的範圍= 記錄材料層12以及障壁層13上週期性地 凹部15。凹部15是藉由對記錄'及成有夕個 照射經料的光,來使倾射料㈣(包括==200929207 The strategy used. That is, the preferred degree or =; the wave height value of the light, the pulse width, etc.: the recording speed used; 5 = the thickness of the material 12 is preferably such that it corresponds to the following concave portion, the thickness can be, for example, in (10) (four) (four) The degree of Z is better than equal..., is better? The equivalent of f is because the material is too thin, then the formed _ part 5 is shallow, and the second 2: the first effect. Another reason is that, as described below, it is difficult to obtain a rhyming effect when using the transcript as a _mask. Further, the upper limit of the thickness is preferably equal to or smaller than the surface nm, more preferably 500 nm. The reason for this is that if the thickness is too thick, the transmittance is difficult to form a deep hole, and the processing speed is high. The thickness t of the recording material layer 12 and the diameter of the concave portion 15 satisfy the following relationship. That is, the upper limit 厚度 of the thickness t of the recording material layer 12 is set to satisfy the value of t <:, and it is more preferable to set it to satisfy i. ! is set to satisfy the value of t<3d. Further, the lower limit of the thickness t of the recording material 曰2 is preferably set to a satisfactory value, and more preferably set to a value satisfying t > d / 1 ,, and more preferably set to satisfy the value of =. Further, the reason why the upper limit value and the lower limit value of the thickness t of the recording material layer 12 are set in accordance with the diameter d of the concave portion 15 is the same. ^, Small The upper limit of the diameter d of the concave portion is expected to be less than or equal to just _nm, preferably less than or equal to 1_nm, and more preferably less than or equal to the moving sac. The lower limit value is expected to be greater than or equal to 10 〇 nm, preferably greater than or equal to 5 〇, 25 200929207 c is preferably greater than or equal to 100 nm. When the material layer 12 is used as a material to be recorded, the coating liquid is prepared by dissolving the material in the bite, and then coating the coating surface on the hair surface 1 by applying a coating method such as extTMi Gn eGat. The surface of 8, whereby a layer of recording material can be formed. # ^ 12 I am concentrating on 5 again. If the early wall layer 13 is made of a transparent material, = there is no special ship. 'Preferably, the carbon is _, and the mass is =1. The oxides and sulfides such as S1〇2, 9ZnS, and Ga0 are used. jin. "Transparent moon" means that the transmissive LED element 10 is smoked. The degree of ί · · · 大于 大于 大于 大于 大于 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^骑 n 疋 ii ii ii ii ii ii ii ii ii ii ii ii ii TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA The range of 3, is = the recording material layer 12 and the periodically recessed portion 15 on the barrier layer 13. The concave portion 15 is made by irradiating the recorded light and illuminating the material (4) (including ==

26 200929207 =變九)而形成的。期待於發光面 地形成凹部15。 知妁靶圍内密集 此外,形成凹部15的原理如下。 ㈣Ϊ對記錄材料層12 (記錄層化合物)照射可被材斜吸 、;長(被材料吸收的波長)的雷射光,則命 舍 記錄材料層12所吸收,此經吸收的光轉換雜田 照射部分的溫度上升。藉此,記騎料们2會的 液化、氣化、昇華、分解等化學及/或物理變引 起上述變化的材料會移動及/或消失,藉此形成凹部15。 此外’卩早壁層為非常薄的層,故而會隨著記錄材料層 2、的移動及/或消失而—同移動及/或消失。並且,當形成 上述凹部15 _,產生化學及/或物理變化的記錄材料層12 的一部分會成為異物而殘留在凹部15的周圍。 '此外,作為凹部丨5的形成方法,例如可應用一次寫入 光碟(Write- Once Optical Disk )或可錄式光碟等中公知的 訊坑的形成方法。具體而言,例如可應用公知的動態最佳 功率控制(Running Optimum P〇wer Control,R〇pC )技術 (例如,日本專利第3096239號公報):檢測出根據訊坑大 小而變化的雷射的反射光的強度,對雷射的輸出功率進行 修正,以使此反射光的強度達到固定,而形成均勻的訊坑。 另外,如上所述的記錄材料層12 (記錄層化合物)的 氣化、昇華或分解,較好的是其變化的比率較大且急遽。 具體而言,記錄層化合物於氣化、昇華或分解時利用示差 熱天秤(TG-DTA )所測定的重量減少率較好的是大於等 27 200929207 於5%,更好的是大於等於1〇0/, 另外,記錄層化合物於氣化、^好的是大於等於20%。 秤(TG-DTA)所测定的重量2或分解時利用示差熱天 °〇的重量減少率)較好的是紐率(溫度每升高1 大於等於0.2H抑更好的是 另外,軟化、液化、顏务θ寻於〇.4/o/c。 ❹ ❹ 理變化的轉移溫度的上^、分解等化學及/或物 好的是小料於_t,更特肩C,更 轉移溫度的下限值較好的是大的雷射功率。另外, 等於loot,更好的是大於^於50°c ’更好的是大於 移溫度過低,顯;;t=:GG。其在於:若轉 小’故而無法形成清晰的穴邊緣雜零d㈣ 並將:^上二:::部15亦可採用形成點(―)狀, ^此篇顺格子狀的凹部。另外, 細長的溝槽狀,並間_2 ‘ 槽狀。、 而,雖名略圖示,但亦可形成連續的溝 LED鄰tH15彼此的間距(_p為作為發光體的 LED兀件H)所發出的光的中心波長λ c的_〜刚倍。26 200929207 = changed nine) and formed. It is expected that the concave portion 15 is formed on the light emitting surface. It is known that the inside of the target is dense. Further, the principle of forming the concave portion 15 is as follows. (4) Ϊ illuminating the recording material layer 12 (recording layer compound) by the material, and the long (the wavelength absorbed by the material) laser light is absorbed by the recording material layer 12, and the absorbed light is converted into the field irradiation. Part of the temperature rises. Thereby, the chemical and/or physical changes such as liquefaction, vaporization, sublimation, and decomposition of the rider 2 are moved and/or disappeared, thereby forming the concave portion 15. In addition, the early wall layer is a very thin layer, so it moves and/or disappears as the recording material layer 2 moves and/or disappears. Further, when the concave portion 15_ is formed, a part of the recording material layer 12 which undergoes chemical and/or physical changes becomes foreign matter and remains around the concave portion 15. In addition, as a method of forming the recessed portion 5, for example, a method of forming a known pit of a Write-Own Optical Disk or a recordable optical disc can be applied. Specifically, for example, a well-known Running Optimum P〇wer Control (R〇pC) technique (for example, Japanese Patent No. 3096239) can be applied: detecting a laser that changes according to the size of the pit The intensity of the reflected light is corrected to the output power of the laser so that the intensity of the reflected light is fixed to form a uniform pit. Further, it is preferable that the gasification, sublimation or decomposition of the recording material layer 12 (recording layer compound) as described above is large and imminent. Specifically, the weight reduction rate measured by the differential thermal balance (TG-DTA) at the time of gasification, sublimation or decomposition of the recording layer compound is preferably greater than or equal to 27, 200929207 to 5%, more preferably 1 or more. In addition, the recording layer compound is preferably 20% or more in gasification. The weight 2 measured by the scale (TG-DTA) or the weight reduction rate by the differential heat degree 分解 is preferably the ratio (the temperature is increased by 1 or more than 0.2H, and more preferably, it is softened, Liquefaction and crystallization are found in 〇.4/o/c. ❹ 变化 变化 变化 变化 变化 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The lower limit value is preferably a large laser power. In addition, it is equal to the loot, and more preferably greater than ^50 °c 'better than the shift temperature is too low, showing; t=: GG. : If it turns small, it is impossible to form a clear hole edge miscellaneous d (4) and will: ^上二:::部15 can also be used to form a point (-), ^ this piece is a lattice-like recess. In addition, the elongated groove a groove shape, and a _2 ' groove shape. However, although the name is abbreviated, it is also possible to form a continuous groove LED adjacent to the distance tH15 (_p is the LED element H of the illuminant). The center wavelength λ c is _~ just doubled.

凹』15口的間距p較好的是中心波長的〇.仍〜加 «,更好的是0.1〜5倍,最好的是〇.2 間距p的下限值較好的是中心波長 吾、H 以上,更好的是咖倍或_倍以上,更好的是(η倍; 28 200929207 c 0.1倍以上 ^υ·2倍或0.2倍以上。另外__ 的上限值較好的疋中心波長❸ 卜間距Ρ 更好的是20倍或20倍以下, 次1〇〇倍以下, 最好的是2倍或2倍以下。 ’疋倍或5倍以下, 凹部15的直徑或溝槽的寬度 〜25倍,較好的是〇 〇25〜1〇倍 =λ c的〇.〇〇5 最好的是0.25〜2倍。 、疋〇.〇5〜2.5倍, ❹ φ 此外,此處所謂之直# 於一半深度處的寬度,g卩所度’是指凹部15 凹部15的直徑或溝槽的寬度可於 定’期待根制距P的大小來 * 適當設 觀上隨著遠離發光面18 i正,以使折射率於宏 ί,凹部15的直徑或溝槽的寬度亦較大;I 大 ;,凹部15的直彳球_的寬㈣如、。^1點而 直徑或溝槽的寬錄好的相距p的2分之, 小,例如為間距P的2〇〜 工右的大 的是40〜6G%。 更好岐3G〜7〇%,更好 ==5的深度較好的是中心波長心的_〜2〇件, 更好 =疋M5〜H)倍,更好的是Q1〜 。 =。期待深度的上限值小於等於2〇〇〇〇 二0是2 小於等於lOOOOnm,更妊& 3 平又于的疋 限值大於料1 ,較^ 11於麵⑽。期待下 大於等於1Gnm。 的疋大於秘5訓,更好的是 參照圖4⑷〜圖4(〇對如上述構成的LED封裳 29 200929207 體1的製造方法進行說明。 、止、如圖4 (a)所示,首先,準備以先前公知的方法所製 以的LED το件1〇的本體即發光部u。此處,對於所準備 的發光,1卜期待使用並非對應於1個LED元件1〇的大 \而疋對應於多個LED元件10的大小的發光部(可形 成夕個LED元件1〇的晶圓(wafer))。於此情況下’如下 Ο 所f於晶圓(發光部11)上形成凹凸並加以清潔後,分別 t斷對應於多個LED元件1G的多個發光部n ’藉此可獲 得多個LED元件1〇。 ,並且,在準備發光部11後,如圖4 (b)所示,依序 形成記錄材料層12及障壁層13。 形成凹部15,形成凹部15的裝置可使用與先前 f斤周知的光碟驅動器同樣的構成。上述光碟驅動 上本專利特開··48號公報The pitch p of the concave 15 is preferably the center wavelength 〇. Still ~ plus «, more preferably 0.1 to 5 times, the best is 〇. 2 The lower limit of the pitch p is preferably the center wavelength More than H, more preferably 365 times or more, more preferably (η times; 28 200929207 c 0.1 times or more ^ υ · 2 times or 0.2 times or more. In addition, the upper limit of __ is better 疋The center wavelength ❸ spacing Ρ is preferably 20 times or less, less than 1 time, and most preferably 2 times or less. '疋 times or less than 5 times, the diameter or groove of the recess 15 The width is ~25 times, preferably 〇〇25~1〇 times=λ c 〇.〇〇5 The best is 0.25~2 times. 疋〇.〇5~2.5 times, ❹ φ In addition, this The width of the so-called straight line at half the depth, the degree of g卩 means that the diameter of the recess 15 of the recess 15 or the width of the groove can be set to the size of the expected root distance P. The light emitting surface 18 i is positive so that the refractive index is macro, the diameter of the concave portion 15 or the width of the groove is also large; I is large; and the width (four) of the straight ball _ of the concave portion 15 is, for example, a diameter of 1 point or The width of the groove is recorded by the distance p 2 points, small, for example, the distance P is 2〇~ The right one is 40~6G%. Better 岐3G~7〇%, better ==5 The depth is better than the center wavelength _~2〇, better = 疋M5~H) times, better is Q1~. =. The upper limit of the expected depth is less than or equal to 2 〇〇〇〇 2 is 2 is less than or equal to 1000 nm, and the limit of 妊 amp amp amp 大于 大于 大于 大于 大于 大于 大于 大于 大于 大于 大于 大于 大于 限值 限值 限值 限值 限值 限值 限值 限值 限值 限值 限值 限值 限值 限值Expected to be greater than or equal to 1Gnm. The 疋 is larger than the secret 5 training, and it is better to refer to FIG. 4(4) to FIG. 4 (〇 〇 LED LED 2009 2009 2009 29 2009 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 29 In the light-emitting unit u which is a main body of the LED τ 件 制 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 a light-emitting portion corresponding to the size of the plurality of LED elements 10 (a wafer in which one LED element 1 can be formed). In this case, a bump is formed on the wafer (light-emitting portion 11) as follows After cleaning, a plurality of light-emitting portions n' corresponding to the plurality of LED elements 1G are respectively turned off, whereby a plurality of LED elements 1' are obtained, and after the light-emitting portion 11 is prepared, as shown in FIG. 4(b) The recording material layer 12 and the barrier layer 13 are sequentially formed. The recess 15 is formed, and the apparatus for forming the recess 15 can be configured in the same manner as the conventional optical disc drive. The above-mentioned optical disc drive is disclosed in Japanese Patent Laid-Open Publication No. 48

St相同的形狀,或貼附於空白的心 :真至先碟驅動器、。並且,根據記錄材料層12的 ^於使其變形的輸出功率對記錄材料層12 朵’二 ,,以此照射的圖案符合圖2(a)或圖2(b =槽的圖案的方式’對雷射光源輪入 ]: J即可。此外’如圖3㈤所示,以預定的週期 、射光的占空比(dutyrati〇)(發光時間w週期"妒、 :是低於實際形成的凹部15的占空比(雷射光的掃二2 的凹部15的長度d/間距P;參照圖3 (a))。此^,ς 30 圖3St the same shape, or attached to a blank heart: true to the first disc drive. And, according to the output power of the recording material layer 12 to deform the recording material layer 12, the pattern illuminated thereby conforms to FIG. 2(a) or FIG. 2 (b=the pattern of the groove pattern' The laser light source is turned in]: J. In addition, as shown in Fig. 3 (5), the duty cycle (dutyrati〇) at a predetermined period (lighting time w period "妒, : is lower than the actual formed recess The duty ratio of 15 (the length d/pitch P of the concave portion 15 of the laser light 2; see Fig. 3 (a)). This ^, ς 30 Fig. 3

❹ 200929207 l) it * _ 定的速度移動不為圓狀的雷射光藉由於發光時間r内以預 為雷射光的占2有利於形成橢31狀的凹部15。此外,作 時的凹部15工比,例如,於將凹部15的間距P設為100 比照射雷射^度d為5G的情況下,以低於50%的占空 的上限值外’於此情況下,#射光的占空比 是小於35% t於寫,更好的是小於慨,更好的 的是大於# w卜下限雜㈣是大於等於1%,更好 10% 另 二匕,可正確地形成規定間距的凹部15。 技術、二碟驅動器相同的聚焦(f, 11上右散法gmatlcmethod)等,則即使於發光部 行聚^伏她曲’亦可容祕於發光面18的表面上進 動器的(G所示’自發絲18_用光碟._ 碟片上“卩^統3G聚集雷射光並進行照射。以與在光記爾 光Μ ί貝訊相_方式,—邊使發光部11旋轉一邊傾 統30沿半徑方向移動,藉此可於發光 面上形成凹部15。 伯 开>成凹部15時的加工條件如下所述。 光學系統30的數值孔徑(numerical ^較好的是大於等於。,,更好的是大於等於Qe)5NAJ子 於=大於等於〇.6。另外,數值孔徑NA的上限較好的是小 1寺於2,更好的是小於等於},更好的是小於等於〇 9。 /、原因在於:若數值孔徑NA過小,則無法進行微細加工. 31 200929207 若數值孔徑過大,則記錄時的角度的邊際(咖响)減 光學系統30的波長例如為4〇5±3〇 nm、532±邓、 650±30nm、7_0nm。其原因在於:此等是容易=大 輸出功率的波長。此外,由於波長 = 工,故而較好。 踢j進仃微細加 ❹ ,样統3〇的輸出功率的下限為大於等於0切, 於等於_’更好的是大於等於5擔,更好 小於等於_ mw,較的輸出功率的上限為 1 乂好的疋小於等於500 mW,更好的 疋小於專於200 mW。其原因在 、 功率過高,二=二 速的 更好的是大於等於5 m/s,更好^的疋大於等於1 m/s, 的上限為小於等於500 m/s,較好於2〇 ^。線逮 更好的是小於等於1()()_,^^、於#於2()()她, 原因在於:若線速過高,_以^;^於等於5Gm/s。其 低,則加工以‘向加工精度;若線速過 _ 無法形成良好的形狀。 如可使用Pult 的具㈣光學加卫機的一例,例 業股份⑽___。 15後,進行圖5:己,材料層12以及障壁層13上形成凹部 於圖5⑷中,為了便㈣解,^的清潔步驟。此外, 、解而放大圖示凹部15。 32 200929207 清潔首先是-邊旋轉一邊將清潔液喷出至基板上。此 時,轉速較好的是20〜700 rpm,更好的是5〇〜 ^好的是⑽〜杨pm。其後,使之乾_ p 是500〜誦0释,更好的是画〜__,更 2000〜5000 rpm。 勺疋 ❹ 清潔液的喷出量較好的是〇.lml〜5〇〇mi。更好 =00 m卜更好的是5〜5G㈤。較好的是於 ^ 清潔液。更好的是1秒〜秒,更好的t 霧」外’亦可考慮浸潰清潔、嘴 霧/月潔n料’但較好的是旋轉清潔。 、 2所述形成凹部15後,將LED元件10自光學加工 2 ,設置(Set)於圖5 (a)所示的旋塗用裝置40 上。接者,驅動此裝詈4〇祐τ υ 光面1W 使70件1G沿其表面(發 軸RA侧的部位!^於:元件10中的裝置40的凝轉 及障壁層===、_〜 反應的液體L。藉此,如圖5 (b)、圖5 因離、、yT ’滴加至LED树1G的發光面18上的液體L 旋轉軸_(參照圖5⑷)向外側移t 異物D體[而將附著於記錄材料層12等上的 水中=2,期待採用含有煙系溶劑、氟系溶劑以及 採用辛/ 的液體。此外,烴系溶劑的-例,例如可 几octane)、壬烷(n〇nane);氟系溶劑的—例, 33 200929207 例如可採用氫氟醚(hydrofluoroether ) ( 3Μ公司製造)。作 為混合溶劑的一例,例如可採用溶劑石油腦(s〇lvent naphtha)、EM CLEAN (註冊商標,日本能源公司製造)、 NS CLEAN ( 5主冊商標,曰本能源公司製造)、Hc系列(東 梭公司製造)。此外,溶劑可單獨使用,亦可混合使用。 Ο ❹ 溶劑的溥點期待自預定的範圍内適當選擇。此範圍較 好的是將下限值設為3(rt,更好的是設為5〇ΐ,最好的是 設,。藉由如此設定下限值,可防止清潔液瞬_ 。:”,更=:青=絲。另外,範圍的上限值較好的是300 更好的疋〇〇C,最好的是150。〇藉由如此 值,可使溶劑於清潔後迅速蒸發而提高生產效率Γ 另外,利用液體L進行清潔時 12的微細形狀’較好的是採用烴系溶劑作材,f 好的是採用辛烷、壬烷。 剞忭马液體L·。尤其 另外,作為旋塗用裝置 MS-A100 (Mikasa公司製造)。 例例如可採用 此外,期待形成凹部15後❹ 200929207 l) It * _ The fixed speed of the laser light that is not circular is due to the fact that the pre-exposed laser light in the illuminating time r is advantageous for forming the ellipse 31-shaped recess 15 . Further, in the case of the concave portion 15 at the time of the operation, for example, when the pitch P of the concave portion 15 is set to 100, the irradiation depth d is 5 G, and the upper limit value of the duty is less than 50%. In this case, the duty ratio of #射光 is less than 35% t is written, better is less than the gene, and more preferably is greater than #w, the lower limit (four) is greater than or equal to 1%, better 10%. The concave portion 15 having a predetermined pitch can be formed correctly. The same focus of the technology, the two-disc drive (f, 11 on the right-hand gmatlcmethod), etc., even if the light-emitting part is converge on the surface of the light-emitting surface 18, the actuator can be secreted on the surface of the light-emitting surface 18 (G Show 'Self-hair 18_ with a disc. _ On the disc, 卩^ 3G gathers the laser light and illuminates it. In the way of illuminating the light-emitting part 11 30 is moved in the radial direction, whereby the concave portion 15 can be formed on the light-emitting surface. The processing conditions when forming the concave portion 15 are as follows. The numerical aperture of the optical system 30 is preferably greater than or equal to. More preferably, it is greater than or equal to Qe) 5NAJ is at = greater than or equal to 〇. 6. In addition, the upper limit of the numerical aperture NA is preferably small 1 temple at 2, more preferably less than or equal to}, and more preferably less than or equal to 〇 9. The reason is that if the numerical aperture NA is too small, microfabrication cannot be performed. 31 200929207 If the numerical aperture is too large, the margin of the angle at the time of recording (coffee) minus the optical system 30 is, for example, 4〇5±3. 〇nm, 532±Deng, 650±30nm, 7_0nm. The reason is: this is easy = large The wavelength of the output power. In addition, because the wavelength = work, it is better. Kick j into the micro-twist, the lower limit of the output power of the sample system is greater than or equal to 0, equal to _' is better than 5 The load is better than _ mw, the upper limit of the output power is 1 乂, the 疋 is less than or equal to 500 mW, and the better 疋 is less than 200 mW. The reason is that the power is too high, and the second = second speed is more Good is greater than or equal to 5 m / s, better ^ 疋 greater than or equal to 1 m / s, the upper limit is less than or equal to 500 m / s, preferably better than 2 〇 ^. Line catch better is less than or equal to 1 () ()_, ^^, ##2()() her, the reason is: if the line speed is too high, _ is ^; ^ is equal to 5Gm / s. If it is low, the processing is 'to the machining accuracy; if the line Speed _ can not form a good shape. If you can use Pult's (four) optical edging machine, an example of the shares (10) ___. 15 after that, Figure 5: has been formed on the material layer 12 and the barrier layer 13 in Figure 5 (4) In order to solve the problem of (4), the cleaning step of the ^. In addition, the solution is enlarged to show the recess 15. 32 200929207 Cleaning is first - the side is rotated while spraying the cleaning liquid To the substrate, at this time, the rotation speed is preferably 20 to 700 rpm, more preferably 5 〇 ~ ^ good is (10) ~ Yang pm. Thereafter, make it dry _ p is 500 ~ 诵 0 release, better It is drawn ~__, more 2000~5000 rpm. Spoon 疋❹ The amount of cleaning liquid is better than l.lml~5〇〇mi. Better = 00 m Bu is better 5~5G (five). It is in ^ cleaning liquid. Better is 1 second ~ second, better t fog "outside" can also consider dipping clean, mouth mist / month clean n material 'but better spin cleaning. After the recess 15 is formed as described above, the LED element 10 is optically processed 2 and placed on the spin coating apparatus 40 shown in Fig. 5(a). Pick up, drive this device 4〇佑τ υ smooth surface 1W so that 70 pieces of 1G along its surface (the part of the hair shaft RA side! ^: the condensing of the device 40 in the component 10 and the barrier layer ===, _ ~ Reaction liquid L. Thereby, as shown in Fig. 5 (b), Fig. 5, yT' is added to the liquid L rotation axis _ (see Fig. 5 (4)) on the light-emitting surface 18 of the LED tree 1G, and is shifted outward. The foreign matter D body [and the water adhering to the recording material layer 12 or the like = 2 is expected to be a liquid containing a tobacco solvent, a fluorine solvent, and a octane. Further, an example of a hydrocarbon solvent may be, for example, an octane) , decane (n〇nane); a fluorine-based solvent - for example, 33 200929207 For example, hydrofluoroether (manufactured by 3 Μ) can be used. As an example of the mixed solvent, for example, solvent petroleum brain (s〇lvent naphtha), EM CLEAN (registered trademark, manufactured by Nippon Energy Co., Ltd.), NS CLEAN (5 main book trademark, manufactured by Sakamoto Energy Co., Ltd.), Hc series (east) may be used. Made by Shuttle Company). Further, the solvents may be used singly or in combination. Ο 溥 The solvent is expected to be properly selected within the predetermined range. In this range, it is preferable to set the lower limit value to 3 (rt, more preferably to 5 〇ΐ, and it is preferable to set it. By setting the lower limit value in this way, it is possible to prevent the cleaning liquid from being instantaneous. , more =: blue = silk. In addition, the upper limit of the range is preferably 300, more preferably 疋〇〇C, and most preferably 150. By such a value, the solvent can be quickly evaporated after cleaning to improve Production efficiency Γ In addition, the fine shape of 12 when cleaning with liquid L is preferably a hydrocarbon-based solvent, and f is preferably octane or decane. Hummer liquid L·. Coating device MS-A100 (manufactured by Mikasa Co., Ltd.) For example, it is possible to use, in addition, after forming the concave portion 15

之間的時間大於等於0.1秒且小於汗等二二異物D 的是大於等於】秒,更好的!的時間的下限值較好 於等於】。。秒。藉由於10秒,最好的是大 的記錄材料層12等充分冷 (可使形成有凹部15 ::料:】2等滴加液體L而 :制f由對高溫的記 另外’自形_部15至開始去除異變形。 之間的時間的上 34 200929207 c =值?;的是小於等於24小時,更好的是小於等於1小 抑制^ 1Q分鐘°藉由如此設定上限值’可 間放置所造成的異物d固著於記錄材料層12 而可利用液體L良好地去除異物D。 e ❹ 另外,液體L的滴加量期待為〇5〜2〇 cc,較好的是 由如此奴下限值,可將異物D確實地以液體 間冲洗掉’ U由設定上限值’可縮短異物去除後的乾燥時 日且=上所,由液體L沖洗掉異物D後,於預定 、曰1内繼、,旋轉’藉此完全吹去殘留於LED元件1〇上 液體L,而使LED元件10迅速乾燥。 其後,雖未圖示,但藉由於盒體2〇上固定咖元件 10,並進行必要的配線,可製造LED封裝體】。 如此形成的LED封裝體卜藉由形成在發光面 =政細凹凸形狀’而於發光面18的近傍使折射率於宏觀上 ^漸變化’可抑細發光面18所發出的光於發光面㈣ 内面反射。藉此提高LED封裝體]的發光效率。 、 而大藉由塗佈等 =器等相同的構成而迅速、廉價知= 用公知的聚焦技術,則即使原材料不平整,亦 造凹部15。上述步驟與先前的例如必f &早地衣 :劑的方法、或塗佈材料並利用烘烤(baki:g)、3用: 烤、赚复雜步驟的方法等相比,極為簡單。附= 35 200929207 簡易地於發光元件的發光面上形成微細的凹凸形狀,而提 高發光效率。 另外’由於利用液體L去除附著在記錄材料層12等 上的異物D,故而可形成良好的凹凸形狀(凹部〗5)。 將液體L滴加至LED元件1〇的旋轉軸RA側的部位, 即可使液體L遍布LED元件1〇的整個面,故而可減少所 塗附的液體的量。另外,由於藉由旋轉使液體1移動,藉 此同時進行液體L對LED元件10整個面的塗附、及附^ 於記錄材料層12等的異物D的去除,故而可謀求縮短 潔時間。 由於自δ己錄材料層12荨沖洗掉異物d後,繼續進行 旋轉,、藉此進行乾燥,故而與沖洗掉異物後停止旋轉而使 ,自然乾燥的方法相比,可較快地使記錄材料層12等乾 燥。另外,於本實施形態中,由於塗附方法是採用旋塗方 法’故而自塗附至乾燥可利用同一裝置4〇進行,因此可謀 求簡化設備。 另外’於清潔記錄材料層12等之時,是將LED元件 10自光學加工機轉移至另一旋塗用装置4〇上,故而可同 時進行凹部的形成步驟與清潔步驟,從而可提高處理能力 (產畺)。另外,藉由如此將LED元件1〇自光學加工機轉 移到另一旋塗用裝置4 0上,可防止於清潔步驟時清潔液飛 月欠至光學加工機的透鏡面上。 [第2實施形態] 其次’參照圖6對本發明的第2實施形態的光學元件 36 200929207 的製造方法進行說明。 光學元件1GA是光的透射性高的構件,从 著於發光元件的發光面而進行使用。例如,可第^ 實施形態中所例示的LED封裝體】的笋主弟 鸯光管的表面等之上而進行制。^面18的表面或 〇 如圖6所示,光學元件·於透明支持體—之上 二有與第!實施形態相同的記錄材料層η U,進而形成有凹部15。 屬 對發光元件所發出的光具有充分的透射性 (例如透射率大於等於8G%左右)即可,例如使 酯等樹脂、或玻璃材料。 人 ^ 當形成凹部15時,補去括縣11Δi $ !實施形態相同的方式調整輸出功率,二】使: = ==’藉此可形成,。此二 照a讀1Α側(記錄材料層12之相反側) 時,、合瘀i田如此自記錄材料層12之相反侧照射雷射光 、9 Is揮如下效果:不會使藉盘♦ 錄材料層12喷出的材料喷出物污染雷田射光源。α記 潔方法,去後,以與第1的實施形態相同的凊 云除附者於記錄材料層12等上的異物D。 1的^!匕而構成的光學元件ι〇Α,藉由貼附於led封裝體 ====或$光管的表面等上,可提高此等發 [第3實施形態]The time between 0.1 and 2 seconds is less than or equal to the second and second foreign matter D of Khan is greater than or equal to sec., and the lower limit of the time of better! is better than or equal to. . second. By 10 seconds, it is preferable that the large recording material layer 12 or the like is sufficiently cold (it is possible to form the recessed portion 15 and the material: 2), etc., and the liquid L is added: the f is made of a high temperature, and the other is self-shaped. Part 15 to the beginning of the removal of the different deformation. The time between the upper 34 200929207 c = value?; is less than or equal to 24 hours, more preferably less than or equal to 1 small suppression ^ 1Q minutes ° by setting the upper limit ' The foreign matter d caused by the interposition is fixed to the recording material layer 12, and the foreign matter D can be well removed by the liquid L. e ❹ In addition, the amount of the liquid L to be dropped is expected to be 〇5 to 2 cc, preferably The lower limit of the slave can be used to flush the foreign matter D between the liquids. The U can be shortened by the set upper limit value. The inside of the crucible 1 is rotated, thereby completely blowing off the liquid L remaining on the LED element 1 to rapidly dry the LED element 10. Thereafter, although not shown, the coffee element is fixed by the casing 2 10, and carry out the necessary wiring, can manufacture LED package]. The LED package thus formed is formed by The glossy surface = the political concavo-convex shape 'the near-twisting of the light-emitting surface 18 causes the refractive index to be macroscopically graded'. The light emitted by the fine-emitting light-emitting surface 18 is reflected on the inner surface of the light-emitting surface (4), thereby improving the LED package] The luminous efficiency is greatly and inexpensively obtained by the same configuration such as coating, etc., using a well-known focusing technique, and the concave portion 15 is formed even if the material is not flat. The above steps are the same as the previous ones. Early lichens: the method of the agent, or the coating material is extremely simple compared to the method of baking (baki:g), 3: baking, making complicated steps, etc. Attachment = 35 200929207 Simple lighting of the light-emitting element A fine uneven shape is formed on the surface to improve the light-emitting efficiency. Further, since the foreign matter D adhering to the recording material layer 12 or the like is removed by the liquid L, a favorable uneven shape (recessed portion 5) can be formed. By the portion on the side of the rotation axis RA of the LED element 1A, the liquid L can be spread over the entire surface of the LED element 1〇, so that the amount of the applied liquid can be reduced. Further, since the liquid 1 is moved by the rotation, At the same time, the liquid L is L The entire surface of the ED element 10 is coated, and the foreign matter D attached to the recording material layer 12 or the like is removed, so that the cleaning time can be shortened. Since the foreign matter d is washed away from the δ recording material layer 12, the rotation is continued. By drying, the recording material layer 12 and the like can be dried relatively quickly, and the coating method is employed in comparison with the natural drying method. The spin coating method 'supplied from the application to the drying can be carried out by the same apparatus, so that the apparatus can be simplified. In addition, when the recording material layer 12 or the like is cleaned, the LED element 10 is transferred from the optical processing machine to another rotation. Since the coating device 4 is attached, the forming step and the cleaning step of the concave portion can be simultaneously performed, and the processing ability (calving) can be improved. Further, by thus transferring the LED element 1 from the optical processing machine to the other spin coating device 40, it is possible to prevent the cleaning liquid from escaping to the lens surface of the optical processing machine during the cleaning step. [Second Embodiment] Next, a method of manufacturing an optical element 36 200929207 according to a second embodiment of the present invention will be described with reference to Fig. 6 . The optical element 1GA is a member having high light transmittance and is used from the light-emitting surface of the light-emitting element. For example, it can be manufactured on the surface of a light-emitting tube of a bamboo shooter, which is exemplified in the above-described embodiment. ^ Surface of surface 18 or 〇 As shown in Figure 6, the optical component is on the transparent support - above and there are two! The recording material layer η U having the same embodiment is formed, and the concave portion 15 is further formed. It is sufficient that the light emitted from the light-emitting element has sufficient transmittance (for example, a transmittance of about 8 G% or more), for example, a resin such as an ester or a glass material. Person ^ When the concave portion 15 is formed, the output power is adjusted in the same manner as the embodiment of the county 11 Δi $ !, and the following can be formed by ====. When the two photos are read on the side of the first side (the opposite side of the recording material layer 12), the same side of the recording material layer 12 is irradiated with the laser light, and 9 Is is swung the following effect: the borrowing material is not recorded. The material ejected from layer 12 contaminates the Rayfield source. After the α-cleaning method, the foreign matter D on the recording material layer 12 or the like is removed by the same cloud as the first embodiment. The optical component ι consisting of 1 can be improved by attaching it to the LED package ==== or the surface of the light pipe, etc. [3rd Embodiment]

37 200929207 a其次,參照圖7⑷〜圖7 (〇對本發明的第3實施 形態的發光元件的製造方法進行說明。 第3實施形態的LED元件1〇的製造方法中,首先, 藉由經過與第i實施形態相同的步驟(參照圖4 (a) ❹ 4 (C)以及圖5 (a)至圖5 (e)),而如圖7 (a)所示, 於記錄材料層12以及障壁層13上形成凹部15,並利用液 體L對記錄材料層12等進行清潔 15的記錄材料層12以及障㈣ 藉此如圖7⑻所示,於發弁^為遮罩進仃_, 的穴料。並且,如圖Γ)戶形成對應於凹部15 去除記錄材料層二刪液等 的發光面18露出。 3 ’猎此使形成凹凸形狀 乾式=’二乍輕刻’可採用濕式飯刻(-⑽ng)或 乾式韻刻(dry etching)等各種蝕 ^ 蝕刻氣體的前進性較古且可、隹—X 、,較好的是採用 外,作為記錄材料及的圖案化的跳。另 用乾―或料的絲方法,可採 層12的材料的層的材料為玻璃、記錄材料 的材科為色素、障壁層13的材 y叶 ::用使用SF6作為_氣體的Rm 作為剝離液的渴式uu^ υ捋如用使用乙醇 若為於LED元;fln除方法。此處,包含發光面的層, 水之類的液體等外部=7與空氣之類的氣體、 衣兄之間形成界面的層,則可為任音 38 200929207 _ ο 的層。 ❹ 以上’根據第3實施形態的製造方法,是於LED元件 10的表面(發光面18)自身形成凹凸,故而無需注意Led 元件10與記錄材料層12的折射率差,可簡單地設計凹凸 形狀。此外’於本實施形態中,於預先形成於LED元件 10的表面上的記錄材料層12上,藉由聚焦技術等形成多 個凹部15 ,藉此可密著於LED元件1〇的表面上並正確地 设置遮罩。因此,於本實施形態中,不會產生如先前所述 由於LED元件1〇的表面翹曲而無法密著遮罩的問題,可 簡單地形成凹凸形狀。 以上對本發明的實施形態進行了說明,但本發明並不 限定於上述實施形態,可適當變更而實施。 例如,於上述實施形態中,雖作為發光元件的例子而 揭不LED元件,但發光元件並不限於LED元件,若為電 漿顯示元件(plasma display element)、雷射、表面傳導電 子發射顯示器(Surface-conduction Electron-emitter37. In the following, a method of manufacturing a light-emitting device according to a third embodiment of the present invention will be described with reference to FIGS. 7(4) to 7 (a method of manufacturing the LED element 1A of the third embodiment) i the same steps as in the embodiment (refer to Fig. 4 (a) ❹ 4 (C) and Figs. 5 (a) to 5 (e)), and as shown in Fig. 7 (a), on the recording material layer 12 and the barrier layer The recording material layer 12 and the barrier (4) for forming the concave portion 15 on the recording material layer 12 and the like 15 by the liquid L are formed as shown in Fig. 7 (8), and are used as a mask for the mask. Further, as shown in the figure, the light-emitting surface 18 corresponding to the concave portion 15 to remove the recording material layer and the second liquid is exposed. 3 'Hunting to make the shape of the concave and convex shape dry = 'two 乍 lightly' can be used in wet rice carving (-(10)ng) or dry etching (dry etching) and other etching gases are more advanced and can be - X, preferably, is used as a recording material and a patterned jump. Further, in the dry- or material-filament method, the material of the layer of the material of the collectable layer 12 is glass, the material of the recording material is the pigment, and the material of the barrier layer 13 is: y: using Rm using SF6 as the gas Liquid thirsty uu^ For example, if using ethanol as LED element; fln removal method. Here, a layer including a light-emitting surface, a liquid such as water, or the like, and a layer which forms an interface with a gas such as air or a brother may be a layer of any sound 38 200929207 _ ο . In the manufacturing method according to the third embodiment, since the unevenness is formed on the surface (light-emitting surface 18) of the LED element 10, it is not necessary to pay attention to the difference in refractive index between the Led element 10 and the recording material layer 12, and the uneven shape can be easily designed. . Further, in the present embodiment, a plurality of concave portions 15 are formed on the recording material layer 12 formed on the surface of the LED element 10 in advance by a focusing technique or the like, thereby being adhered to the surface of the LED element 1〇 and Set the mask correctly. Therefore, in the present embodiment, there is no problem that the surface of the LED element 1 is warped and the mask cannot be closely covered as described above, and the uneven shape can be easily formed. Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and can be implemented as appropriate. For example, in the above embodiment, the LED element is not disclosed as an example of the light-emitting element, but the light-emitting element is not limited to the LED element, and is a plasma display element, a laser, or a surface conduction electron-emitting display ( Surface-conduction Electron-emitter

Display,SED )元件、螢光管、電致發光 (Electr〇luminescence,EL)元件等發光器具則可為任 意者。 、另外,於上述各實施形態中,雖將本發明的凹部形成 方法應用於發光元件或光學元件的製造枝巾,但本發明 並不限定於此,於㈣製品的料方法中亦可應用本發 二即圖8(a)以及圖8⑻所示,於由無機物構成 的基板(基體)Η上形成穴部來作為資訊,於此基板 39 200929207 51的穴部16侧設置保護層52,藉此製造作為凹凸製品的 一例的光學讀取用資訊記錄媒體(光碟5〇),於此方法中 . 亦可應用本發明。具體而言,藉由與圖4 (a)至圖4 (c) ·· 所示的方法相同的方法,於基板51上形成記錄材料層^ 以及障壁層13,針對此記錄材料層12等一邊調整輸出功 * 率一邊照射經聚集的光而形成凹部15。接著,藉由與圖5 . 至圖5 (c)所示的方法相同的方法,利用液體清潔 ❹ 附著於基板51上的異物。其後,藉由與圖7 (a)至圖7 (C)所示的方法相同的方法,將記錄材料層12等作為遮 罩丄於基板51上形成對應於凹部15的穴部16。根據以上 内谷,可於基板51上良好地形成穴部16。 ' 此外,作為基板51的材料,較好的是含有&、入1 材料’例如較好的是Si或Si〇2、八叫等。另外,作為保 護層52的材料,可單獨使用或組合使用Si02等益機氧化 等ί機氮化物之類的_材料,或 © =輯料。其中,就光碟%的長壽命化的觀 〇 •點而&較好的是保護層52亦由無機系的材料所形成。 - 、、另外,作為凹凸製品,並不限於光碟50,例如,亦可 . 平板顯示器⑽PaneldiSplay)(有機a、液 (表面傳導電子發射顯示器)、電路基板、 半導體及其封裝體、中介層(in—e〇、 :'土反、f洁存媒體(storagemedia)、生物晶片(bi。 寻。 η 此外,作為用以批量生產上述形成有高密度的微細凹 200929207 =Λ 前正研究奈娜卩 技*。此處庙所謂奈米壓印技術,是指 (臟嶋le)應用使用模具的壓製工 ===在被加工材料上進行成型的= 案,與使用電子㈣圖 的=形編用❹ 阻材料的方法。 4厂,、、候%尤 面』施形態中’是於發光元件或光學元件的發光 與發光面或表面之間介由其他材料而設置: /外’ 包含半導體的LED元件的表面 或透鏡時,此等保護層或透鏡的表面(與 ΐ層〜絲,心可於鱗表面設置記錄材 若可實施形態中,形成凹部15時是使用雷射光,但 光。Λ ’、、、’轉的;Μ、,财可錢用雷射光之類的單色 時間S射最小加工形狀,而期待藉由照射微小 另外=1、雷射光的點餘,以使其滿足上述關係。 點」)時,ιΤΓ/15大於最小加工形狀(以下稱為「雷射 ’” 4由連接雷射點而形成凹部15即可。此處,若 200929207 對熱模式型記錄材料層12昭射蛩 =溫度達到轉移溫度的部分產生變化 度最強’並向外側而逐漸減弱,故= 穴(雷射喊直則、於騎光的點錢的微細的 可且’當使微細的穴連接而形成凹部15時, It ί的形狀精度。並且,若為光子模式— Φ ❹ ==形:穴(雷射點)較大,其= 模式型材料。 較好岐如本發明般使用熱 於上述實施形態中,是於記錄材料層12之上形成障壁 θ ’但本㈣並*限砂此,亦可如目9(^)1圖9(c) =無障壁層13。尤其是如第3實施形‘ (b)所福形祕_記騎料層12 較好的是無障㈣13。 於上述第3實施形態中,是於咖 ^穴部16 ’但本發明並不限^於此,亦可於 ^^ 態的光學元件10A的表面(支持體UA 實施形 材料層12等作為蝕刻遮罩來形成穴部。、、)上將記錄 態中,是於形成穴部16的面(發光面18或基的形 上,直接以記錄材料層12等作為蝕刻遮罩 ϋ表面) 明並不限定於此。例如’在藉由蝕刻氣體容二 料層12等的情況下,如圖1G⑷所示,亦可將可藉己^ 42 ❹ Ο 200929207 記錄材料層】2等幾乎無影響的侧氣體進行餘刻的遮罩 層〗7,设置於發光面18與記錄材料層】2之間。此外,圖 :〇⑷至圖ίο⑷表示於發光面形成穴部】6的形 態’但於基板51的表面上形成穴部16的情況亦可同樣地 設置遮罩層17。 由此,首先以與第1實施形態相同之方式,利用雷射 光於記錄材料層12以及障壁層13上形成凹部15,並且利 用液體L來清潔記錄材料層12等(參照圖ι〇⑷)。其次, =10 (b)所不,利用第I韻刻氣體來侧遮罩口, ,此= 罩層17上形成對應於凹部15的貫通孔Μ。此 S及:S 氣體?選擇可不會除去記錄材料層12 手土 s 6、種類的氣體,故而記錄材料層12以及障 壁層13成為遮罩而使遮罩層口被蝕刻。 其後’如圖10 (e)所示’利用筮 尸 包含發光面18的層,夢此於挤朵而f 刻乳體來钱刻 15的穴邱16 發先面18上形成對應於凹部 的八4 16。此時’記錄材制12以 蝕刻氣體_而立㈣失,遮罩層 日3被苐2 ㈣良好地終並且,其後;如= 以預定的剝離液等去除遮罩層17 不+曰由 發光面18露出。 而使形成為凹凸形狀的 例:ΓΓ包=)至圖10⑷所, ^如4含發料n的發以18 = 貝(saPPhlre)、記錄材料層12的材料 才枓為i 13的材料為無機層時,可採用東京應化工業股:有 43 ❹ 參 200929207 ^nsi的雙層⑼切來作為遮罩層π,採 dV,氣體,採用ch作為第2姓刻氣體。 ㈣ΓίΪ 形態中,是藉由旋塗於記錄材料層12 =;!:清潔用液體l,但本發明並不限定於此,例 二;=塗、模塗、浸塗等任意方法。此外,藉由以 ===記錄材料層12等的表面塗附液體後,與上述 Γ等i 1 口,謂由使工件(wwk)(具有記錄材料層 i n 旋轉而使液體移動,而沖洗掉表面的異 於浸塗中,亦可在將工件浸潰於液體的過程中, 耩由於液中活動工件,而沖洗掉表面的異物。 上中’是藉由旋轉工件而使工件的表 二用、英二t明並不限定於此,例如亦可藉由自然乾燥 或利用送風機來送風等而使之乾燥。 於上述各實施形態中,是在光學加工機之外另外設置 進打液體L的塗附、乾燥的t置,但本發明並不限定於此, 亦可於光學加工機的旋轉台上進行液體的塗附、乾燥。其 中’為了防止於光學加工機的加工頭(光出射面)上附著 液體’而期待如上述各實施形態般於光學加工機之外另外 設置進行塗附、乾燥的裝置。 實施例 其次’就確認本發明的效果的一實施例加以說明。 作為實施例’於圓盤狀的基板(支持體)上形成1〇〇· 厚的色素層(記錄材料層),於此基板的半徑25 mm〜4〇 mm的範圍内,以直徑方向上為0.〗的間距、圓周方向Display, SED) Light-emitting devices such as components, fluorescent tubes, and electroluminescence (EL) elements can be used. Further, in the above embodiments, the concave portion forming method of the present invention is applied to the production of a light-emitting element or an optical element. However, the present invention is not limited thereto, and the present invention may be applied to the material method of the product. As shown in Fig. 8 (a) and Fig. 8 (8), a hole portion is formed on a substrate (base) made of an inorganic material as information, and a protective layer 52 is provided on the side of the hole portion 16 of the substrate 39 200929207 51. The present invention can also be applied to an optical recording information recording medium (disc 5) which is an example of an uneven product. Specifically, the recording material layer and the barrier layer 13 are formed on the substrate 51 by the same method as the method shown in FIGS. 4(a) to 4(c), for the recording material layer 12 and the like. The output power* is adjusted to illuminate the concentrated light to form the concave portion 15. Next, the foreign matter adhering to the substrate 51 is cleaned by the liquid by the same method as the method shown in Fig. 5 to Fig. 5(c). Thereafter, the recording material layer 12 or the like is formed as a mask on the substrate 51 by the same method as that shown in Figs. 7(a) to 7(C) to form the hole portion 16 corresponding to the concave portion 15. According to the above inner valley, the hole portion 16 can be favorably formed on the substrate 51. Further, as the material of the substrate 51, it is preferable to contain & 1 material, for example, Si or Si 〇 2, octagonal or the like is preferable. Further, as the material of the protective layer 52, a material such as a zirconia such as a zirconia such as a zirconia such as a zirconia or a material such as a nitriding material may be used alone or in combination. Among them, in view of the long life of the optical disk, it is preferable that the protective layer 52 is also formed of an inorganic material. In addition, as the embossed product, it is not limited to the optical disc 50, for example, a flat panel display (10) PaneldiSplay) (organic a, liquid (surface conduction electron emission display), circuit substrate, semiconductor and its package, interposer (in —e〇, : '土反,f storage media (storagemedia), biochip (bi. 寻. η In addition, as a mass production of the above-mentioned high-density micro-concave 200929207 =Λ *. The so-called nanoimprint technology in the temple refers to the use of molds for the use of molds === molding on the material to be processed, and the use of electronic (four) diagrams for the shape of the mold. The method of resisting materials. 4 factory,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In the case of a surface or a lens, the surface of such a protective layer or lens (in the case where the recording layer is provided on the surface of the scale on the surface of the protective layer or the wire, the laser beam is used when the concave portion 15 is formed, but the light is used. , 'turned Μ , , , , , , , , , , 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷/15 is larger than the minimum processing shape (hereinafter referred to as "laser"". 4 It is sufficient to form the concave portion 15 by connecting the laser spot. Here, if 200929207 is used for the thermal mode type recording material layer 12, the temperature reaches the transfer temperature. Part of the change is the strongest' and gradually weakens to the outside, so = hole (the laser shouts straight, the fineness of the money for riding the light 'When the fine holes are connected to form the concave portion 15, the shape of the It ί Accuracy, and if it is a photon mode - Φ ❹ == shape: the hole (laser point) is large, it is a mode type material. Preferably, as in the present invention, the heat is used in the above embodiment, and is in the recording material layer. The barrier θ ' is formed on the top of 12, but this (4) and * is limited to sand. It can also be as shown in Fig. 9(^)1Fig. 9(c) = no barrier layer 13. In particular, as in the third embodiment, (b) It is preferable that the riding layer 12 is free from obstacles (four) 13. In the third embodiment described above, it is in the coffee pot portion 16 ' The present invention is not limited thereto, and may be formed on the surface of the optical element 10A in the state (the support body UA is formed as the etching mask to form the hole portion, etc.). The surface on which the cavity portion 16 is formed (the surface of the light-emitting surface 18 or the base, and the recording material layer 12 or the like is directly used as the etching mask surface) is not limited thereto. For example, 'the gas layer 2 is etched by the etching gas. In the case of the same, as shown in FIG. 1G (4), the mask layer 7 which can be left by the side gas having almost no influence such as the recording material layer 2, 200929207 can be disposed on the light-emitting surface 18 and Record material layer between 2]. Further, in the drawings, 〇(4) to ίο(4) indicate that the hole portion 6 is formed on the light-emitting surface. However, the mask layer 17 may be similarly formed in the case where the hole portion 16 is formed on the surface of the substrate 51. Thus, in the same manner as in the first embodiment, the concave portion 15 is formed on the recording material layer 12 and the barrier layer 13 by laser light, and the recording material layer 12 or the like is cleaned by the liquid L (see Fig. (4)). Next, =10 (b) does not use the first rhyme gas to cover the side of the mask, and this = the through hole 对应 corresponding to the recess 15 is formed in the cover layer 17. This S and: S gas? It is selected that the recording material layer 12 and the barrier layer 13 are masked so that the mask layer opening is etched without removing the gas of the recording material layer 12. Thereafter, as shown in Fig. 10(e), the layer of the light-emitting surface 18 is used by the corpse, and the dream is formed by the embossing of the breast. Eight 4 16 At this time, the recording material 12 is etched by the etching gas, and the mask layer 3 is 良好2 (4) well ended, and thereafter; if = the mask layer 17 is removed by a predetermined stripping liquid or the like. Face 18 is exposed. For example, the shape of the concavo-convex shape is as follows: ΓΓ包 =) to Fig. 10 (4), ^, for example, the material containing the material n is 18 = saPPhlre, and the material of the recording material layer 12 is the material of the i 13 is inorganic. For the layer, the Tokyo Chemical Industry Co., Ltd. can be used: the double layer (9) of 43 ❹ 2009 200929207 ^nsi is used as the mask layer π, dV, gas, and ch is used as the second gas. (4) The 形态ίΪ form is spin-coated on the recording material layer 12 =;!: the cleaning liquid l, but the present invention is not limited thereto, and the second embodiment; = coating, die coating, dip coating, or the like. Further, after the liquid is applied by the surface of the recording material layer 12 or the like with ===, the surface of the above-mentioned crucible, i.e., the workpiece (wwk) (having the recording material layer in rotating to move the liquid, is washed away). The surface is different from dip coating, and during the process of immersing the workpiece in the liquid, the foreign matter on the surface is washed away due to the moving workpiece in the liquid. The upper part is used to rotate the workpiece to make the surface of the workpiece The present invention is not limited thereto, and may be dried, for example, by natural drying or by blowing air through a blower. In each of the above embodiments, a coating of the liquid L is additionally provided in addition to the optical processing machine. The attached and dried t are placed, but the present invention is not limited thereto, and the liquid can be applied and dried on the rotary table of the optical processing machine. In order to prevent the processing head (light exit surface) of the optical processing machine In the above-described embodiments, an apparatus for coating and drying is additionally provided in addition to the optical processing machine. Embodiments Next, an embodiment in which the effects of the present invention are confirmed will be described. A 1 μ· thick pigment layer (recording material layer) is formed on a disk-shaped substrate (support), and the substrate has a radius of 25 mm to 4 mm and a diameter of 0. Circumferential direction

44 S 200929207 上為1 /zm的間距形成凹部。另外,於形成凹部後,清潔 色素層的表面,藉由乾式餘刻於基板上形成凹凸。 各層的詳細内容如下。 •基板 材質 石夕(silicon ) 厚度 0.5 mm 外徑 101.6 mm (4英忖)44 S 200929207 has a recess formed at a pitch of 1 / zm. Further, after the concave portion is formed, the surface of the pigment layer is cleaned, and irregularities are formed on the substrate by dry etching. The details of each layer are as follows. • Substrate material Si Xi (silicon) thickness 0.5 mm outer diameter 101.6 mm (4 inches)

内徑 15 mm •色素層(記錄材料層) 將2 g下述化學式的色素材料溶解於100 ml的TFP(四 氟丙醇)溶劑中,進行旋塗。於旋塗時,將塗佈開始轉速 設為500 rpm,將塗佈結束轉速設為1000 rpm,將塗佈液 滴塗(dispense)於基板的内周部,將轉速逐漸提高至2200 rpm。此外,色素材料的折射率η為1.986,消光係數k為 0.0418。 [化8]Inner diameter 15 mm • Pigment layer (recording material layer) 2 g of a pigment material of the following chemical formula was dissolved in 100 ml of TFP (tetrafluoropropanol) solvent and spin-coated. At the time of spin coating, the coating start rotation speed was set to 500 rpm, the coating end rotation speed was set to 1000 rpm, and the coating liquid was dispensed onto the inner peripheral portion of the substrate, and the rotation speed was gradually increased to 2,200 rpm. Further, the refractive index η of the pigment material was 1.986, and the extinction coefficient k was 0.0418. [化8]

45 200929207 針對上述光記錄媒體的色素層側的面,利用設置有球 面像差修正板的Pulstec工業股份有限公司製造的 DDU1000 (波長為405 nm,數值孔徑NA為〇 65 )來記錄 微細的凹部。 凹部的形成條件如下。 雷射輸出功率 2 m从45 200929207 The DDU1000 (wavelength: 405 nm, numerical aperture NA: 〇 65) manufactured by Pulstec Industrial Co., Ltd. equipped with a spherical aberration correction plate was used to record the fine concave portion on the surface of the above-mentioned optical recording medium. The formation conditions of the recess are as follows. Laser output power 2 m from

線 4 5 m/s 5 MHz的矩形波 記錄信號 於形成凹部後,將上述的裝置的主轴的旋轉速度設為 3〇〇释,形成凹部2分鐘後,於基板的半徑2〇麵的附 ^滴加辛垸。詳細而言,以3秒鐘僅將3 ee的辛烧滴加至 土板上。並且,辛烷滴加結束後,將主軸的旋轉速度提高 至1000 rpm’並使基板旋轉20秒鐘後,進一步提高至 rpm,使基板旋轉2〇秒鐘,藉此使基板乾燥。 、接著,於使基板乾燥後,以色素層作為遮罩,藉由乾 式蝕刻(Rffi)於基板上形成凹凸,利用剝離液去除 層。此外,乾式钱刻的條件如下。 、 餘刻氣體 剝離液 SF6 + CHF3 (1 : 1) 乙醇 利用SEM (掃描型電子顯纖)觀察以上述方式製作 ,基板的表©另外,比較例是不進行上述清潔步驟,而 二上述同樣_成色切,於色素層上形成凹部,以色素 :作為遮罩進彳T乾式爛而製作基板,並湘SEM觀察 其矣τδΐ。 y、 46 200929207 c 具結果證實:於訾始么 的範圍内,大致均勻地形成直〜4。咖 另外確認:於比較例中,致為0.3⑽的穴。 内存在未來出、:基板的半徑25〜40mm的範圍 板,八、刀。根據以上内容確認:藉由清潔美 板’可於基板切成良好的恥形狀。 ^基 限定=發揭露如上’然其並非用以 ❹ ,視後附之申;本發明之保護 【圖式簡單說明】 的放=⑷是咖封裂體的圖,圖1⑻是圖1⑷ 其他是俯視觀察發光面的―_,®2⑴為 圖3、(a)是說明凹部的直徑與間距的關係的圖;圖3 )是說明雷射光的發糾岐週朗關係的圖。 的圖圖4(a)〜圖4(e)是表示咖封裝體的製造步驟 圖5 (a)〜圖5 (c)是表示清潔步驟的圖。 圖6是表示第2實施形態的光學元件的製造方法的圖。 件的i造步驟的=(〇疋表不苐3貫施形態的LED元 圖8U)是表示藉由包括本發明的清潔方法的製造方 法所製造的料的立體s。圖8 (b)是圖8 (a)的光碟的 47 200929207 剖面圖。 圖9 (a)〜圖9 (c)是表示自第1實施形態的製造步 _ 驟中去除形成障壁層的步驟的圖。 .圖10 (a)〜圖10 (d)是表示將第3實施形態的LED 元件的製造步驟加以部分變更之形態的圖。 ' 【主要元件符號說明】 1 : LED封裝體 ' 10 : LED 元件 ® 10A:光學元件 ' 11 :發光部 11A :支持體 . 12 :記錄材料層 13 :障壁層 15 :凹部 16 :穴部 17 :遮罩層 ⑩ 17a :貫通孔 . 18 :發光面 ' 20 :盒體 ; 21、22 :配線 30 :光學系統 40 :旋塗用裝置 50 :光碟 51 :基板 48 200929207 52 :保護層 d :記錄材料層12的厚度 D 異物 L :液體After the rectangular wave recording signal of the line 4 5 m/s 5 MHz is formed into the concave portion, the rotation speed of the main shaft of the above device is set to 3, and the concave portion is formed for 2 minutes, and then the radius of the substrate is 2 附. Add xinxin. In detail, only 3 ee of the sensation was added to the soil plate in 3 seconds. Further, after the completion of the octane dropwise addition, the rotation speed of the main shaft was increased to 1000 rpm' and the substrate was rotated for 20 seconds, and then further increased to rpm, and the substrate was rotated for 2 seconds to dry the substrate. Then, after the substrate was dried, the pigment layer was used as a mask, and irregularities were formed on the substrate by dry etching (Rffi), and the layer was removed by a stripping solution. In addition, the conditions for dry money engraving are as follows. The residual gas stripping solution SF6 + CHF3 (1:1) Ethanol was produced by the above-described method by SEM (scanning electron fiber-optic) observation, and the surface of the substrate was used. In addition, in the comparative example, the above-mentioned cleaning step was not performed, and the same as above. The color was cut, a concave portion was formed on the pigment layer, and a pigment was used as a mask to form a substrate, and the SEM was observed by SEM. y, 46 200929207 c The result is confirmed: in the range of the beginning of the ,, the formation of the straight ~ 4 is substantially uniform. It was confirmed that in the comparative example, it was 0.3 (10). Memory in the future, the radius of the substrate is 25~40mm. Plate, eight, knife. It was confirmed from the above that the substrate can be cut into a good shave shape by the cleaning of the board. ^基定=发揭露如如' However, it is not used for ❹, depending on the application; the protection of the present invention [Simple description of the diagram] == (4) is the diagram of the coffee seal, Figure 1 (8) is Figure 1 (4) The "-", "2" (1) in plan view of the light-emitting surface is shown in Fig. 3, (a) is a view illustrating the relationship between the diameter of the concave portion and the pitch, and Fig. 3) is a view for explaining the relationship between the light-emitting and the correction of the laser light. 4(a) to 4(e) are diagrams showing the steps of manufacturing the coffee package. Fig. 5(a) to Fig. 5(c) are diagrams showing the cleaning step. Fig. 6 is a view showing a method of manufacturing an optical element according to a second embodiment; The LED element of Fig. 8U is a three-dimensional s of a material produced by the manufacturing method including the cleaning method of the present invention. Figure 8 (b) is a cross-sectional view of the optical disk of Figure 8 (a) 47 200929207. Fig. 9 (a) to Fig. 9 (c) are views showing a step of removing the barrier layer formed in the manufacturing step of the first embodiment. (a) to (d) of FIG. 10 are views showing a state in which the manufacturing steps of the LED element of the third embodiment are partially changed. ' [Main component symbol description] 1 : LED package '10 : LED element ® 10A: Optical element ' 11 : Light-emitting portion 11A : Support. 12 : Recording material layer 13 : Barrier layer 15 : Concave portion 16 : Hole portion 17 : Mask layer 10 17a : through hole. 18 : light emitting surface ' 20 : box body 21 , 22 : wiring 30 : optical system 40 : spin coating device 50 : optical disk 51 : substrate 48 200929207 52 : protective layer d : recording material Layer 12 thickness D foreign body L: liquid

P :凹部15的間距 T :週期 RA :旋轉轴 r:發光時間P : the pitch of the recess 15 T : period RA : rotation axis r: lighting time

4949

Claims (1)

200929207 十、申請專利範圍: h種熱模式型記錄材料層的清潔方法,其是用於去 模式的變形的記錄材料層上藉由照射經聚集 : 成夕個凹部時所產生的異物,其特徵在於:利用 不〃 5己錄材料層發生反應的液體去除異物。 的申利範圍第1項所述的熱模式型記錄材料層 .形成上述凹部後至開始去除上述異物 ❹ 的時間5又為大於等於0.1秒且小於等於72小時。 的产窄乾圍第1項所述的熱模式型記錄材料層 ^ ’ a中上述液體含有煙系溶劑、氣系溶劑以及 水τ的至少一種。 的、專^範圍第1項所述的熱模式型記錄材料層 方法’其中將上述液體供給至上述記錄材料層上 ί上材料層沿其表面旋轉,藉此利用上述液體 特上迷異物自上述記錄材料層的内側沖洗至外侧。 5·如申明專利範圍第4項所述的熱 ❹ 騎潔方法,其中於沖㈣卜ί材科層 獅齡姑ΐ中洗掉述異物後,繼續上述記錄材 / /層的%轉,藉此使上述記錄材料層乾燥。 如巾請專利範圍第1項所述的熱模式型記錄材料層 將:二其中使上述記錄材料層沿其表面旋轉,並且 液此記錄㈣層的"部分’藉此利用上述 液體將上賴物自上述記錄㈣層的_沖洗至外側。 的、、4=請t?謂第6項所述的熱模式型記錄材料層 /办方法、中於沖洗掉上述異物後,_上述記錄材 50200929207 X. Patent application scope: The cleaning method of the h type thermal pattern type recording material layer, which is used for the deformation of the recording material layer on the de-mode, by the illumination, the foreign matter generated when the concave portion is formed, and the characteristics thereof It is to remove foreign matter by using a liquid that does not react with the material layer. The heat mode type recording material layer according to the first aspect of the invention, wherein the time 5 after the formation of the concave portion and the start of the removal of the foreign matter ❹ is 0.1 second or more and 72 hours or less. In the heat mode type recording material layer ^' a according to the first aspect of the invention, the liquid contains at least one of a flue solvent, a gas solvent, and water τ. The heat mode type recording material layer method according to the item 1, wherein the liquid is supplied onto the recording material layer, and the material layer is rotated along the surface thereof, thereby utilizing the liquid special fascia from the above The inside of the recording material layer is rinsed to the outside. 5. In the enthusiasm for riding and cleaning according to item 4 of the patent scope, in which the foreign matter is washed out in the lion (a) ί 材 科 狮 龄 龄 , , , , , , , , This causes the above recording material layer to be dried. The thermal pattern type recording material layer described in the first paragraph of the patent scope will be: wherein the recording material layer is rotated along its surface, and the liquid portion of the (four) layer is recorded by using the above liquid. The material is rinsed from the _ layer of the above recording (four) to the outside. , 4= please t? The thermal mode type recording material layer/method described in item 6, after rinsing off the foreign matter, _ the above-mentioned recording material 50 ❹ 200929207 料層的旋轉’藉此使上述記㈣料層乾燥。 8· —種凹凸製品的製造方 ’、 有凹凸的凹凸製品的製造方法,1H表面上具 於上述基體的表面上形成可括如下步驟: 材料層的步驟; 進仃_式的變形的記錄 凹部=記錄材料層上藉由照射經聚集的光而形成多個 藉由如申請專利範圍第1項至 3式型記錄材料層的清潔方法來去除上==的 以異物去除了的記_料層作為鮮來進行蝴,夢 =於上述基體的表面上形成對應於上述凹部的穴部的^ 元件9的元Γ製造方法,其是具有發光體的發光 兀件的k方法’其特徵在於包括如下步驟: 步驟於發光面上形射騎熱模式㈣形的雜材料層的 凹部=記=料層上藉由照射經聚集的光而形成多個 轉ΐΠϋ範圍第1項至第7項中任_項所述的 …、式i屺錄材料層的清潔方法來去除上述異物的步驟。 〗〇.如t料觀m第9項㈣的發光树的製造方 、、,\其中以異物去除了的記騎料層作為料來進行蚀 亥1,藉此於上述發光面形成對應於上述凹部的穴部。 51 200929207 η*一種光學元件的製造方半,苴s 件的發光面以福古卜十恭丄 /、疋藉由安裝於發光元 製造方法,其特:在:括=光效率的先學元件的 上,料所發出的光可透射的切體的表面 ‘:進仃熱模式的變形的記錄材料層的步騾; 凹部的步=料層上藉由照射經聚集的光來形成多個 敎如申明專利辜巳圍第1項至第7項中任一項所述的 ',、、記錄材料層的清潔方法來去除上述異物的步驟。 •如申π專利圍第n項所述的光學元件的製造方 til二上述記錄材料層作為遮罩來進行蚀刻,藉此於 上逑支持體的表面上形成對應於上述凹部的六部。 Φ 52❹ 200929207 Rotation of the layer ' thereby drying the layer (4) above. 8. A method for producing a embossed product, a method for producing a concave-convex product having irregularities, wherein the surface of the substrate having a 1H surface is formed by the following steps: a step of material layer; a recording concave portion of a deformation of the 仃 type On the recording material layer, a plurality of cleaning layers separated by the foreign matter are removed by irradiating the collected light to form a plurality of cleaning methods by the layer of the recording material of the first to third types of the patent application. As a fresh method, a dream manufacturing method of forming a component 9 corresponding to a hole portion of the above-mentioned concave portion on the surface of the above-mentioned substrate, which is a k-method of a light-emitting element having an illuminant, is characterized by including the following Step: Step on the light-emitting surface to form a concave portion of the heat-generating mode (four)-shaped impurity material layer = record on the material layer by irradiating the collected light to form a plurality of transition ranges from item 1 to item 7 The method of cleaning the layer of the material described in the item to remove the foreign matter. 〇 如 如 如 如 如 如 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 发光 发光 发光 发光 发光The cavity of the recess. 51 200929207 η* The manufacturing half of an optical component, the light-emitting surface of the 苴 件 以 以 福 福 福 福 福 福 疋 疋 疋 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装 安装The surface of the cut surface of the light that is transmitted by the material is: the step of the deformed recording material layer in the heat mode; the step of the recess = the layer is formed by irradiating the collected light to form a plurality of flaws The method of cleaning the recording material layer to remove the foreign matter as described in any one of the items 1 to 7 of the invention. The manufacturing of the optical element described in item n of the patent application, the second recording material layer is etched as a mask, thereby forming six portions corresponding to the concave portion on the surface of the upper support. Φ 52
TW097139385A 2007-10-15 2008-10-14 Cleaning method of heat mode type recording material layer, bumpy product manufacturing method, light emitting device manufacturing method, and optical device manufacturing method TW200929207A (en)

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Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
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Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE350399C (en) 1919-09-19 1922-03-20 Qu Bernd Ziemert Projection screen
JPS6027592B2 (en) * 1977-10-26 1985-06-29 キヤノン株式会社 Heat mode recording method
JPS58175693A (en) 1982-04-08 1983-10-14 Ricoh Co Ltd High density optical information recording medium
JPS5955795A (en) 1982-09-27 1984-03-30 Tdk Corp Optical recording medium
JPS5981194A (en) 1982-11-01 1984-05-10 Tdk Corp Optical information medium
JPS5984356A (en) * 1982-11-05 1984-05-16 Ricoh Co Ltd Manufacture of optical disk master
JPS6018387A (en) 1983-07-11 1985-01-30 Tdk Corp Optical recording medium
JPS6019587A (en) 1983-07-13 1985-01-31 Tdk Corp Optical recording medium
JPS6019586A (en) 1983-07-13 1985-01-31 Tdk Corp Optical recording medium
JPS6035054A (en) 1983-08-05 1985-02-22 Tdk Corp Optical recording medium
JPS6036190A (en) 1983-08-09 1985-02-25 Tdk Corp Optical recording medium
JPS6036191A (en) 1983-08-09 1985-02-25 Tdk Corp Optical recording medium
JPS6044554A (en) 1983-08-20 1985-03-09 Tdk Corp Light recording medium
JPS6044555A (en) 1983-08-20 1985-03-09 Tdk Corp Light recording medium
JPS6044389A (en) 1983-08-23 1985-03-09 Tdk Corp Optical recording medium
JPS6044390A (en) 1983-08-23 1985-03-09 Tdk Corp Optical recording medium
JPS6047069A (en) 1983-08-24 1985-03-14 Tdk Corp Optical recording medium
JPS6054892A (en) 1983-09-05 1985-03-29 Tdk Corp Optical recording medium
JPH0626028B2 (en) 1984-02-06 1994-04-06 株式会社リコー Optical information recording medium
JPS63121146A (en) * 1986-11-11 1988-05-25 Canon Inc Manufacture of optical recording medium
JPS63209995A (en) 1987-02-27 1988-08-31 Fuji Photo Film Co Ltd Optical data recording medium
US4990388A (en) * 1988-07-30 1991-02-05 Taiyo Yuden Co., Ltd. Optical information recording medium
JPH0827974B2 (en) * 1988-08-26 1996-03-21 太陽誘電株式会社 Optical information recording medium and optical information recording method thereof
JP3009909B2 (en) 1990-05-21 2000-02-14 ティーディーケイ株式会社 Optical recording medium
JPH0474690A (en) 1990-07-17 1992-03-10 Ricoh Co Ltd Optical information recording medium
JP3448661B2 (en) 1993-12-08 2003-09-22 株式会社ニコン Synthetic quartz type for optical disk and optical disk
JP3451752B2 (en) 1994-10-31 2003-09-29 ソニー株式会社 Optical recording medium
JP3096239B2 (en) 1996-04-01 2000-10-10 太陽誘電株式会社 Optical disc running OPC method and optical disc recording / reproducing apparatus
JPH1083577A (en) * 1996-09-06 1998-03-31 Fuji Photo Film Co Ltd Production of optical information recording medium
JP3264843B2 (en) * 1996-11-22 2002-03-11 松下電器産業株式会社 Mastering manufacturing method and manufacturing equipment
JPH1153758A (en) 1997-07-30 1999-02-26 Mitsubishi Chem Corp Recording and reproducing method
JP3438587B2 (en) 1998-05-27 2003-08-18 三菱化学株式会社 Optical recording medium
JP3646563B2 (en) 1998-05-27 2005-05-11 三菱化学株式会社 Optical recording medium
JPH11334206A (en) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp Optical recording medium
JPH11334204A (en) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp Optical recording medium
JP3633279B2 (en) 1998-05-27 2005-03-30 三菱化学株式会社 Optical recording medium
JP2000108513A (en) 1998-10-05 2000-04-18 Mitsui Chemicals Inc Photorecording medium
JP2000158818A (en) 1998-12-01 2000-06-13 Mitsui Chemicals Inc Optical recording medium
JP2002015474A (en) * 2000-06-27 2002-01-18 Hitachi Ltd Method for manufacturing master disk of optical disk and optical disk substrate
JP2002124504A (en) * 2000-10-17 2002-04-26 Dainippon Screen Mfg Co Ltd Substrate cleaner and substrate cleaning method
JP3787515B2 (en) * 2001-10-11 2006-06-21 キヤノン株式会社 Stamper for optical disk substrate and manufacturing method thereof
JP3956756B2 (en) 2001-10-31 2007-08-08 ヤマハ株式会社 Optical disk recording device
JP2004139662A (en) * 2002-10-17 2004-05-13 Matsushita Electric Ind Co Ltd Master disk recording method, master disk, and optical information recording medium
JP4136834B2 (en) * 2003-07-16 2008-08-20 富士フイルム株式会社 Optical information recording medium
JP2005196819A (en) * 2003-12-26 2005-07-21 Ricoh Co Ltd Optical information recording medium and its manufacturing method
US7803648B2 (en) * 2005-03-09 2010-09-28 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
JP2006323927A (en) * 2005-05-18 2006-11-30 Ricoh Co Ltd Manufacturing method of master disk and stamper for manufacturing optical information recording medium
JP5232369B2 (en) * 2006-02-03 2013-07-10 日立化成株式会社 Manufacturing method of package substrate for mounting optical semiconductor element and manufacturing method of optical semiconductor device using the same

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