200924113 九、發明說明 (一） 發明所屬之技術領域： 本發明係關於在半導體裝置之製造作業上等用於切斷半 導體基板之半導體基板之切斷方法。 (二） 先前技術： 以往，這種技術，在日本特開第2002 - 1 5 8276號公報和 特開第2000- 1 04040號公報上記載有如下之技術。首先， 將黏著片將雙面黏結樹脂層黏貼於半導體晶圓之裏面，然 後在半導體晶圓被把持於黏著片上之狀態下用刀片切斷半 導體晶圓以得出半導體晶片。又，當拾取黏著片上之半導 體晶片之際將雙面黏結樹脂與各個之半導體晶片一起自黏 著片剝離。藉此，能省掉在半導體晶片之裏面塗佈接著劑 等之作業，能將半導體晶片接著於引線框（lead frame)上。 不過，上述之技術，在用刀片切斷被把持於黏著片上之 半導體晶圓之際只有不切斷黏著片，但要確實地切斷存在 於半導體晶圓和黏著片之間之雙面黏結樹脂層。因此，這 種情形用刀片切斷半導體晶圓，須要特別慎重。 (三） 發明內容： 因此，本發明係鑑於這種情事而創作出者，其目的係提 供一種能以良好效率將半導體基板與雙面黏結樹脂層一起 切斷之半導體基板之切斷方法。 爲了達成上述目的，本發明有關之半導體基板之切斷方 法其特徵係包括下述作業：形成作業，在經雙面黏結樹脂 層而被黏貼薄片之半導體基板之內部、對合集光點、照射 -5- 200924113 雷射光，藉此，在半導體基板內部形成因多光子吸收所產 生之改質領域，藉該改質領域形成切斷預定部；及切斷作 業，在形成切斷預定部後藉伸展薄片，沿著切斷預定部切 斷半導體基板及雙面黏結樹脂層。 此半導體基板之切斷方法係在半導體基板之內部對合集 光點照射雷射光，使在半導體基板內部產生多光子吸收現 象以形成改質領域，因此，能沿著切斷半導體基板所需之 切斷預定部在半導體基板之內部能形成切斷預定部。這樣 子，在半導體基板內部形成切斷預定部後，能用較小之力 ，以切斷預定部爲起點，在半導體基板之厚度方向產生龜 裂。因此之故，伸展黏貼在半導體基板上之薄片後能沿著 切斷預定部以良好精確度切斷半導體基板。這時，被切斷 之半導體基板成對向之切斷面初期係處在密接狀態，隨著 薄片之伸展而分開，因此，也沿著切斷預定部切斷存在於 半導體基板和薄片之間之雙面黏結樹脂層。因此，相較於 保留薄片，用刀片切斷半導體基板及雙面黏結樹脂層之情 形，能以極佳之效率沿著切斷預定部切斷半導體基板及雙 面黏結樹脂層。而且，被切斷之半導體基板成對向之切斷 面因初期係相互密接在一起，故被切斷之各個之半導體基 板和被切斷之各個之雙面黏結樹脂層約呈相同之外形，能 防止雙面黏結樹脂自各半導體基板之切斷面被擠出。 另外’本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 片之半導體基板的內部對合集光點，以集光點上之尖峰功 -6 - 200924113 率密度爲lxl08(W/cm2)以上且脈衝寬爲lps以下之條件照 射雷射光，藉此，在半導體基板內部形成含有熔融處理領 域之改質領域，藉含有該熔融處理領域之改質領域形成切 斷預定部，及切斷作業，在形成切斷預定部後藉伸展薄片 俾沿著切斷預定部切斷半導體基板雙面黏結樹脂層。 此半導體基板之切斷方法，在形成切斷預定部之作業上 ，係對合半導體基板之內部，以集光點上之尖峰功率密度 爲lxl08(W/cm2)以上且脈衝寬爲1μ5以下之條件照射雷射 光。故，半導體基板之內部藉多光子吸收而被局部加熱。 藉此加熱而在半導體基板內部形成熔融處理領域。此熔融 處理領域因係爲上述之改質領域之一例，故此半導體基板 之切斷方法，相較於保留薄片而用刀片切斷半導體基板及 雙面黏結樹脂層之情形，能以極佳之效率沿著切斷預定部 切斷半導體基板及雙面黏結樹脂層。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 片之半導體基板之內部，對合集光點照射雷射光，藉此， 在半導體基板內部形成改質領域，以該改質領域形成切斷 預定部；及切斷作業，在形成切斷預定部後藉伸展薄片而 沿著切斷預定部切斷半導體基板及雙面黏結樹脂層。又， 此改質領域也有爲經熔處理後之領域之情形。 依此半導體基板之切斷方法，也與上述之半導體基板之 切斷方法相同之理由，相較於保留薄片而用刀片切斷半導 體基板及雙面黏結樹脂層之情形，能以極佳之效率沿著切 -7- 200924113 斷預定部切斷半導體基板及雙面黏結樹脂層。但是，改質 領域有藉多光子吸收而形成之情形，也有藉其它原因而形 成之情形。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在被黏貼薄片之半導體基板之 內部對合集光點照射雷射光，藉此，在半導體基板之內部 形成改質領域，並藉該改質領域形成切斷預定部；及切斷 作業，在形成該切斷預定部後藉伸展薄片而沿著切斷預定 部切斷半導體基板。 依此半導體基板之切斷方法，相較於保留薄片而用刀片 切斷半導體基板之情形，能以極佳之效率沿著切斷預定部 切斷半導體基板。 另外，於上述之本發明有關之半導體基板之切斷方法上 ，切斷預定部之形成作業或可以切斷預定部爲起點使龜裂 到達半導體基板之雷射光入射側之表面，或可以切斷預定 部爲起點使龜裂到達與半導體之雷射光入射側相反之側之 裏面，或可以切斷預定部爲起點，使龜裂到達半導體基板 之雷射光入射側之表面和與其相反之側之裏面。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層黏貼薄片 之半導體基板之內部對合集光點照射雷射光，藉此，在半 導體基板內部形成因多光子吸收所產生之改質領域，並以 該改質領域形成切斷預定部；切斷作業，在形成切斷預定 部之作業後，沿著切斷預定部使半導體基板產生應力，藉 -8 - 200924113 此沿著切斷預定部切斷半導體基板；及切斷作業，在切斷 半導體基板後藉伸展薄片而沿著半導體基板之切斷面切斷 雙面黏結樹脂層。 此半導體基板之切斷方法也藉多光子吸收形成改質領域 ’並能藉此改質領域沿著切斷半導體基板所需之切斷預定 線在半導體基板之內部形成切斷預定部。是以，沿著切斷 預定部使半導體基板產生應力時能以良好精確度沿著切斷 預定部切斷半導體基板。又，伸展黏貼於半導體基板上之 薄片時被切斷之半導體基板成對向之切斷面係從相互密接 之狀態，隨著薄片之伸展而分離，進而存在於半導體基板 和薄片之間之雙面黏結樹脂層逐沿著半導體基板之切斷面 被切斷。因此，相較於保留薄片而用刀片切斷半導體基板 及雙面黏結樹脂層之情形，能以極佳之效率沿著切斷預定 部切斷半導體基板及雙面黏結樹脂層。而且，被切斷之半 導體基板成對向之切斷面初期因係相互密接在一起，故切 斷後之各個半導體基板和切斷後之各個之雙面黏結樹脂層 之外形約略相同，能防止雙面黏結樹脂自各個半導體基板 之切斷面被擠出。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 片之半導體基板之內部對合集光點，以集光點之尖峰功率 密度爲lxl〇8(W/cm2)以上且脈衝寬爲1μ8以下之條件照射 雷射光，藉此，在半導體基板內部形成含有熔融處理領域 之改質領域，並藉含有該熔融處理領域之改質領域形成切 -9- 200924113 斷預定部；切斷作業，在形成切斷預定部後使沿著切斷預 定部在半導體基板上產生應力，藉此，沿著切斷預定部切 斷半導體基板；及切斷作業，在切斷半導體基板後，藉伸 展薄片而沿著半導體基板之切斷面切斷雙面黏結樹脂層。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 片之半導體基板之內部對合集光點照射雷射光，藉此在半 導體基板內部形成改質領域，並以該改質領域形成切斷預 定部；切斷作業，在形成切斷預定部後沿著切斷預定部使 半導體基板產生應力，藉此，沿著切斷預定部切斷半導體 基板；及切斷作業，在切斷半導體基板後藉伸展薄片而沿 著半導體基板之切斷面切斷雙面黏結樹脂層。又，此改質 領域也有係爲熔融處理後之領域。 依這些半導體基板之切斷方法，也是因與上述之半導體 基板之切斷方法相同之理由，相較於保留薄片而用刀片切 斷半導體基板及雙面黏結樹脂層之情形，能以極佳之效率 沿著切斷預定部切斷半導體基板及雙面黏結樹脂層。 爲達成上述目的，本發明有關之半導體基板之切斷方法 ’其係一種沿著切斷預定線切斷表面上有形成功能元件之 半導體基板之半導體基板之切斷方法，其特徵爲包括下述 作業：形成作業，將半導體基板之裏面作爲雷射光之入射 面’在半導體基板之內部對合集光點照射雷射光藉以形成 改質領域’藉此改質領域沿著切斷預定線距雷射光入射面 既定距離內側形成切斷起點領域；裝著作業，在形成切斷 -10- 200924113 起點領域後經雙面黏結樹脂層在半導體基板之裏面裝著能 伸展之把持構件；及切斷作業，在裝著保持構件後使把持 構件伸展，藉此，沿著切斷預定線切斷半導體基板及雙面 黏結樹脂層。 此半導體基板之切斷方法係以表面形成有功能元件之半 導體基板爲加工對象物。又，將這樣之半導體基板之裏面 作爲雷射光入射面，在半導體基板之內部對合集光點並照 射雷射光，藉此，例如產生多光子吸收或與其同等之光吸 收，進而沿著切斷預定線在半導體基板之內部形成因改質 領域所產生之切斷起點領域。這時，將半導體基板之裏面 作爲雷射光之入射面之理由係若將表面作爲雷射光入射面 時，則功能元件會有妨礙雷射光之入射之虞。這樣子，在 半導體基板之內部形成切斷起點領域時，則自然地或藉施 加較小之力，能以切斷起點領域爲起點使產生龜裂，此龜 裂並能到達半導體基板之表面和裏面。因此，在形成切斷 起點領域後經雙面黏結樹脂層在半導體基板之裏面裝著能 伸展之把持構件，使此把持構件伸展時，沿著切斷預定線 切斷之半導體基板之切斷面則隨著把持構件之伸展從密接 之狀態分離。藉此，沿著切斷預定線切斷存在於半導體基 板和把持構件之間之雙面黏結樹脂層。於是，相較於用刀 片切斷之情形能以極佳之效率沿著切斷預定線切斷半導體 基板及雙面黏結樹脂層。而且，沿著切斷預定線被切斷之 半導體基板之切斷面最初因係相互密接在一起，故被切斷 之各個半導體基板和被切斷之各個雙面黏結樹脂層之外形 -11 - 200924113 約略相同，進而防止雙面黏結樹脂自各個半導體基 斷面被擠出。 這裡，所謂功能元件係意指，例如，藉晶體成長 之半導體動作層、光二極體等之受光元件、雷射二 之發光元件、作爲電路而形成之電路元件等。 另外，具備在形成切斷起點領域之前，硏磨半導 之裏面俾使半導體基板之厚度達到既定之厚度之作 佳者。這樣子，藉事先硏磨裏面使半導體基板達到 厚度，從而，沿著切斷預定線，能更精確地切斷半 板及雙面黏結樹脂層。另外，所謂硏磨係意指切削 、化學蝕刻等。 另外，改質領域包含熔融處理領域之情形。如加 物若係爲半導體基板，則藉雷射光之照射形成熔融 域之情形。此熔融處理領域因係上述之改質領域之 故這種情形也能容易切斷半導體基板，能以良好效 切斷預定線切斷半導體基板及雙面黏結樹脂層。 另外，上述之本發明有關之半導體基板之切斷方 形成切斷預定領域之際、或可以切斷起點領域爲起 裂到達半導體基板之表面、或可以切斷起點領域爲 龜裂到達半導體基板之裏面、或可以切斷起點領域 使龜裂到達半導體基板之表面和裏面。 (四）實施方式·· (實施發明之最佳形態） 以下將參照圖面詳細說明本發明有關之半導體基 板之切 而形成 極體等 體基板 業爲較 既定之 導體基 、硏削 工對象 處理領 一例， 率沿著 法，在 點使龜 起點使 爲起點 板之切 -12- 200924113 斷方法之良好實施形態。 本實施形態有關之半導體基板之切斷方法，係在半導體 基板之內部對合集光點照射雷射光，藉此，在半導體基板 內部形成藉多光子吸收所產生之改質領域，並藉此改質領 域形成切斷預定部。因此，在說明本實施形態有關之半導 體基板之切斷方法之前，將以多光子吸收爲中心說明爲了 形成切斷預定部所實施之雷射加工方法。 光子之能量h υ若小於材料之吸收帶間隙（band gap)Ec 時則在光學上係呈透明。於是，被材料吸收之條件係爲 h υ >E(3。但是，gp便光學上係透明，若使雷射光之強度作 成非常大而成nh υ >EG之條件（n = 2、3、4、…）時材料會 產生吸收。此現象即稱爲多光子吸收。若是脈衝波之情形 時雷射光之強度係由雷射光之集光點之尖峰功率密度爲 (W/cm2)決定，例如尖峰功率密度爲1 X 1 08(W/cm2)以上之 條件會產生多光子吸收。尖峰功率密度係由（集光點上之 雷射光之每個脈衝之能量）+ (雷射光之束點（beam spot)斷 面積X脈衝寬）求出。另外，若是連續波之情形，雷射光之 強度則是由雷射光之集光點之電場強度（W/cm2)決定。 下面將參照第1〜6圖說明利用這樣之多光子吸收之本 實施形態有關之雷射加工原理。第1圖係雷射加工中之半 導體基板1之平面圖，第2圖係沿著第1圖所示之半導體 基板1之II-II線之斷面圖，第3圖係雷射加工後之半導 體基板1之平面圖，第4圖係沿著第3圖所示之半導體基 板1之IV -1V線之斷面圖，第5圖係沿著第3圖所示之半 200924113 導體基板1之v-v線之斷面圖’第6圖係切斷 基板1之平面圖。 如第1及2圖所示，在半導體基板1之表面 半導體基板1所需之切斷預定線5°切斷預定 狀延伸之假想線（也可在半導體基板1上實際 切斷預定線5)。本實施形態有關之雷射加工係 子吸收之條件，在半導體基板1之內部對合集 導體基板1照射雷射光以形成改質領域。另外 雷射光L集光之地點。 藉沿著切斷預定線5 (亦即沿著箭頭A之方 動雷射光，使集光點P沿著切斷預定線5移動 3-5圖所示，沿著切斷預定線5僅在半導體基 形成改質領域7，以此改質領域7形成切斷預 實施形態有關之雷射加工方法並非藉半導體基 射光L使半導體基板1發熱而形成改質領域。 光L穿透半導體基板1，在半導體基板1內部 吸收，進而形成改質領域7。於日，半導體基: 3幾乎不吸收雷射光，因此，半導體基板1之 熔融。 在切斷半導體基板1上，若要切斷之地點有 導體基板1則自該起點產生龜裂，因此，如第 能以較小之力切斷半導體基板1。於是，在半 之表面3不會產生不必要之龜裂而能切斷半導 另外’在以切斷預定部爲起點之半導體基板 :後之半導體 3上有切斷 線5係直線 畫線以作爲 以產生多光 光點P對半 ，集光點係 向）相對地移 。藉此如第 板1之內部 :定部9。本 板1吸收雷 而是使雷射 產生多光子 板1之表面 表面3不會 起點，則半 6圖所示， 導體基板1 體基板1。 之切斷，有 -14- 200924113 下述之兩點想法。一種係在切斷預定部形成後藉對半導體 基板1施加人爲之力，以切斷預定部爲起點，半導體基板 產生龜裂’進而切斷之情形。這種情形係例如半導體基板 之厚度大之情形。所謂施加人爲之力係指例如，沿著半導 體基板之切斷預定部對半導體基板施加彎曲應力，和剪斷 應力’或者對半導體基板賦與溫度差使產生熱應力。另外 一種係藉形成切斷預定部，以切斷預定部爲起點朝半導體 基板之斷面方向（厚度方向）自然地龜裂，終至切斷半導體 基板之情形。這是，例如，若半導體基板之厚度小之情形 則能藉1列之改質領域形成切斷預定部，若半導體基板之 厚度大則能藉在厚度方向上形成多列之改質領域而形成切 斷預定部。另外，此自然龜裂之情形也是，在切斷地點不 會在對應未形成切斷預定部之部份上搶先產生到表面止之 分裂而能僅切斷對應形成切斷預定部之部份，因此，能良 好地控制切斷。近年來，矽晶圓等之半導體基板之厚度朝 向薄化，因此這種控制性矽之切斷方法係很有效。 且說，本實施形態上藉多光子吸收而形成之改質領域， 下文說明之熔融處理領域。 1半導體基板內部對合集光點，以集光點上之電場強度 爲lxl08(w/cm2)以上且脈衝寬爲1μ5以下之條件照射雷射 光。藉此，半導體基板之內部藉多光子吸收而被局部加熱 。藉此加熱在半導體基板內部形成熔融處理領域。所謂熔 融處理領域係指短暫熔融後再固化之領域，真正爲熔融狀 態之領域，自熔融狀態再行固化之狀態之領域，也可說是 -15- 200924113 相變化之領域，晶體結構產生變化之領域。另外，所謂熔 融處理領域也能係指在單晶體結構、非晶質結構、多晶體 結構上從某種結構變化到別的結構之領域。亦即，例如， 從單晶體結構變化到非晶質結構之領域，自單體結構變化 到多晶體結構之領域，自單晶體結構變化到包含非晶質結 構及多晶體結構之結構之領域。半導體基板若是矽單晶體 結構之情形時熔融處理領域則係爲例如非晶質矽之結構。 電場強度之上限値係爲例如lxl08(w/cm2)。脈衝寬，例如 ，Ins〜200ns 爲佳。 本發明者係藉實驗確認在矽晶圓之內部形成熔融處理領 域。實驗條件係如下述。 (A)半導體基板：矽晶圓（厚度爲3 50μιη，外徑爲4英吋） (Β)雷射 光源：半導體雷射激發Nd : YAG雷射 波長:1 0 6 4nm 雷射光點斷面積：3.14xl(T8cm2 振動形態：Q切換脈衝 振動頻率：100kHz 脈衝寬：3 0 n s 輸出：20μ<1/脈衝 雷射光品質：ΤΕΜ〇〇 偏光特性：直線偏光 (C)集光用透鏡 倍率：5 0倍 -16- 200924113 N.A. ： 0.55 對雷射光波長之透射率·_ 6 0 % (D)載置半導體基板之載置台之移動速度：l〇〇mm 第7圖係爲表示以上述條件藉雷射加工被切斷之矽晶圓 之一部份之斷面之照片。矽晶圓1 1之內部形成熔融處理 領域1 3。另外，藉上述條件形成之熔融處理領域1 3之厚 度方向之大小係爲100μηι程度。 下文將說明藉多光子吸收形成熔融處理領域1 3。第8圖 係爲示出雷射光之波長與矽基板內部之透射率之關係之曲 線圖。但是，去除矽基板之表面側和裏面側各個之反射成 份僅示出內部之透射率。關於矽基板之厚度t爲50 μιη、 100 μηι、200 μιη、500 μηι、1000 μηι 之上述關係。 例如，關於Nd : YAG雷射之波長爲1 064nm，矽基板之 厚度爲5 00μιη以下之情形時從圖上可知有80%以上之雷射 光穿透矽基板之內部。第7圖所示之矽晶圓11之厚度因 係3 5 0 μ m，故多光子吸收所產生之熔融處理領域1 3係形 成在矽晶圓之中心附近，亦即距表面1 7 5 μιη之部份。這種 情形之透射率，若參考厚度爲200μηι之矽晶圓之情形，則 是90%以上’故被矽晶圓U之內部吸收之雷射光很少， 幾乎全部透射。此情事意指在矽晶圓1 1之內部並非吸收 雷射光而在矽晶圓1 1之內部形成熔融處理領域1 3 (亦即不 是藉利用雷射光之通常之加熱而形成熔融處理領域），熔 融處理領域1 3係藉多光子吸收而形成者。利用多光子吸 收形成熔融處理領域係例如，記載於日本熔接學會全國大 -17- 200924113 會演講槪要第66集（2000年4月），第72頁〜第73頁 「藉微微（？4〇)(10"12)秒脈衝雷射所執行之矽晶圓之加 特性評估」一文上。 另外，矽晶圓係以藉熔融處理領域所形成之切斷預定 爲起點朝斷面方向產生龜裂，藉此龜裂到達矽晶圓之表 和裏面終至被切斷。到達矽晶圓之表面和裏面之龜裂也 是自然成長之情形，也有是藉對矽晶圓施力而成長之情 。另外，自切斷預定部到矽晶圓之表面和裏面自然地成 龜裂之情形，可有從形成切斷預定部之熔融處理領域係 熔融狀態開始龜裂之情形，也有在形成切斷預定部之熔 處理領域從熔融狀態再固化之際產生龜裂之情形。但是 任一種情形，熔融處理領域皆只形成在矽晶圓內部，在 斷後之切斷面上，如第7圖所示，熔融處理領域僅形成 內部。在半導體基板之內部藉熔融處理領域形成切斷預 部後則在切斷時，因爲不易產生偏離切斷預定線之不必 之龜裂，因此容易控制切斷。 另外，考慮半導體基板之晶體結構和其劈開性等，若 下述那樣形成切斷起點領域的話，則能以該切斷起點領 爲起點，以更小之力，且良好精確度，切斷半導體基板 亦即，若是由矽等之鑽石結構單晶體半導體作成之基 之情形，最好是沿著（111)面（第1劈開面）—（110)面（第 劈開面）之方向形成切斷起點領域。另外，若是由GaAs 閃鋅礦型結構之πι-ν族化合物半導體作成之基板之情 時最好係沿著（1 1 0)面之方向形成切斷起點領域。 之 工 部 面 有 形 長 爲 融 切 在 定 要 如 域 0 板 2 等 形 -18- 200924113 另外，若沿著形成上述之切斷起點領域所需之方向（例 如，沿著單晶體矽基板上之（11 1)面之方向），或者沿著與 形成切斷起點領域所需之方向成正交之方向在基板上形成 取向平坦時，則以該取向平坦爲基準’能容易且正確地在 基板上形成沿著形成切斷起點領域所需方向之切斷起點領 域。 下面將參照第9圖說明使用於上述之雷射加工方法之雷 射加工裝置。第9圖係爲雷射加工裝置1 〇 〇之槪略構成圖 〇 雷射加工裝置100具備產生雷射光L之雷射光源101’ 爲了調節雷射光L之輸出和脈衝等而控制雷射光源1 ο 1之 雷射光源控制部1 〇2，月有反射雷射光L之功能且配置成 能將雷射光L之光軸之取向改變90°之分色鏡103，對被 分色鏡103反射之雷射光L予以集光之集光用透鏡105， 載置被經集光用透鏡1 〇 5集光後之雷射光照射之加工對象 物1之載置台107，用於將載置台1〇7朝X軸向移動之X 軸台（stag e)109，將載置台107朝與X軸向正交之Y軸移 動之Y軸台111，用於將載置台朝與X軸及Y軸向正 交之方向之Z軸向移動之Z軸台113，及控制此三個台 1 〇 9、1 1 1、1 1 3之移動之台控制部1 1 5。 2：軸方向因係爲與半導體基板1之表面3成正交之方向 ，故成爲入射半導體基板〗之雷射光L之焦點方向。於是 ，藉將Z軸台113在Z軸方向上移動，能在半導體基板1 之內部對合雷射光L之集光點P。另外，此集光點0在 -19- 200924113 Χ(Υ)軸方向之移動係藉Χ(Υ)軸台109(111)使半導體基板1 在Χ(Υ)軸方向上移動而執行。 雷射光源101係爲產生脈衝雷射光之Nd: YAG雷射。 能作爲雷射光源101之雷射，另外有Nd : YV04雷射、Nd :YLF雷射和鈦藍寶石雷射。若是形成熔融處理領域之情 形時最好使用Nd : YAG雷射、Nd : YV04雷射、Nd : YLF 雷射。本實施形態，對半導體基板1之加工雖係使用脈衝 雷射光，但是只要能引起多光子吸收的話也可使用連續波 雷射光。 雷射加工裝置100另具備用於產生照明被載置於載置台 107上之半導體基板1之可視光線之觀察用光源1 17，及 配置在與分色鏡1 〇3及集光用透鏡1 05相同光軸上之可視 光用之光束分離器119。分色鏡103係配置在光束分離器 119和集光用透鏡105之間。光束分離器119具有將一半 之可視光線反射，使另外之一半透射之功能，且配置成將 之可視光線之光軸之取向改變90°。從觀察用光源11 7產 生之可視光線約一半被光束分離器反射，此被反射之 可視光線穿透分色鏡1 03及集光用透鏡1 〇5 ’而照射含有 半導體基板1之切斷預定線5等之表面3。 雷射加工裝置100另具備光束分離器H9’及配置在與 分色鏡103及集光用透鏡105相同之光軸上之攝影元件 1 2 1和結像透鏡1 2 3。作爲攝影元件1 2 1者有例如c C D攝 影機。照射含有切斷預疋線4 _之表面3之可視光線之反 射光係穿透集光用透鏡105、分色鏡103 '光束分離器Π9 -20- 200924113 ’在結像透鏡1 2 3上結像後被攝影元件1 2 1攝影而成爲攝 影資料。 雷射加工裝置100另具備輸入從攝影元件121輸出之攝 影資料之攝影資料處理部1 25，及控制雷射加工裝置1 〇〇 整體之整體控制部1 27 ’及監視器1 29。攝影資料處理部 1 2 5係根據攝影資料，運算用於使觀察用光源〗丨7產生之 可視光之焦點對合表面3之焦點資料。接著，根據此焦點 資料，台控制部1 1 5移動控制Z軸台1 1 3，藉此，使可視 光之焦點對合表面3。於是，攝影資料處理部丨25係作爲 自動聚焦單元而運作。另外，攝影資料處理部1 2 5係根據 攝影資料’運算表面3之擴大影像等之影像資料。此影像 資料然後被送至整體控制部1 2 7，經整體控制部執行各種 處理後送到監視器1 2 9。藉此，在監視器1 2 9上顯示擴大 影像等。 整體控制部1 2 7輸入來自台控制部1 1 5之資料，及攝影 資料處理部1 2 5之影像料等，並根據這些資料，控制雷射 光源控制部1 02、觀察用光源1 1 7及台控制部1 1 5，藉此 ，控制整體雷射加工裝置1 00。於是，整體控制部1 27係 作爲電腦單元而運作。 下面將參照第9及1 〇圖說明藉上述那樣組成之雷射加 工裝置100所執行之切斷預定部之形成步驟。第10圖係 爲用於說明雷射加工裝置1 0 0所執行之切斷預定部之形成 步驟之流程圖。 用未圖示之分光光度計等測定半導體基板1之光吸收特 -21 - 200924113 性。根據此測定結果，選定產生對基板1係透明之波長或 者吸收少之波長之雷射光L之雷射光源101(S101)。接著 ，測定半導體基板1之厚度。根據厚度之測定結果及半導 體基板1之折射率，決定半導體基板1在Z軸方向之移動 量（S 103)。這是爲了使雷射光L之集光點P位於半導體基 板1之內部，以位在半導體基板1之表面3之雷射光L之 集光點P爲基準而在半導體基板1之Z軸方向上之移動量 。此移動量係輸入整體控制部1 2 7。 將半導體基板1載置於雷射加工裝置100之載置台107 。又，使自觀察用光源1 1 7產生可視光以照射半導體基板 1(S1 05)。含有被照明切斷預定部5之半導體基板1之表 面3被攝影元件1 2 1攝影。切斷預定部5係爲用於切斷半 導體基板1所需之假想線。被攝影元件1 2 1攝影之攝影資 料係被送到攝影資料處理部1 2 5。根據此攝影資料，攝影 資料處理部1 2 5運算觀察用光源丨〗7之可視光之焦點能位 在半導體基板1之表面3之焦點資料（S 107)。 此焦點資料被送至台控制部1 1 5。台控制部1 1 5則根據 此焦點資料使Z軸台113在Z軸方向上移動（S109)。藉此 ’使觀察用光源1 1 7之可視光焦點位在半導體基板1之表 面3。另外’攝影資料處理部丨2 5根據攝影資料運算含有 切斷預定線5之半導體基板丨之表面3之擴大影像資料。 此擴大影像資料則經整體控制部1 2 7而被送至監視器1 2 9 ，藉此將切斷預定線5附近之擴大影像顯示在監視器丨2 9 上。 -22 - 200924113 整體控制部127輸入事先在步驟S103上決定之移動量 資料，然後將此移動量資料送至台控制部1 1 5。台控制部 1 1 5則根據此移動量資料，藉Z軸台1 1 3使半導體基板朝 Z軸方向移動俾使雷射光L之集光點P之位置在半導體基 板1之內部（S1 1 1)。 接著，自雷射光源1 01產生雷射光L，使雷射光L照射 到半導體基板1之表面3之切斷預定線5。雷射光L之集 光點P因係位在半導體基板1之內部，故熔融處理領域僅 形成在半導體基板1之內部。又，使X軸台109、Y軸台 1 1 1沿著切斷預定線5移俾藉沿著切斷預定線5形成之熔 融處理領域在半導體基板1之內部著切斷預定線5形成切 斷預定部（S113)。 藉上述步驟，完成雷射加工裝置100所執行之切斷預定 部之步驟，而在半導體基板1之內部形成切斷預定部。在 半導體基板1之內部形成切斷預定部後即能較小之力使沿 著切斷預定部在半導體基板1之厚度方向上產生龜裂。 下面，將說明本實施形態有關之半導體基板1之切斷方 法。另外，這裡，係使用屬於半導體晶圓之矽晶圓11作 爲半導體基板。 首先，如第11A圖所示，在矽晶圓11之裏面17上黏貼 著薄片20俾被覆矽晶圓1 1之裏面17。此黏著薄片20具 有厚度爲100 μπι程度之底材21，於此底材21上設有層 厚數μπι程度之UV硬化樹脂層22。另外，在此UV硬化 樹脂層22上設有作爲雙面結合用接著劑之雙面黏結樹脂 -23- 200924113 層23°另外’在矽晶圓u之表面上成矩陣狀地形成有多 個功能元件。這裡，所謂功能元件係指光二極體等之受光 元件’雷射二極體等之發光元件、或者作爲電路而形成之 電路元件等。 接著’如第1 1 B圖所示，例如使用上述之雷射加工裝置 1 00 ’在矽晶圓1 1之內部對合集光點P自表面3側照射雷 射光’藉此’在矽晶圓1 1之內部形成係爲改質領域之熔 融處理領域1 3，以此熔融處理領域丨3形成切斷預定部9 。在形成此切斷預定部9時雷射光係在成矩陣狀配置在矽 晶圓1 1之表面3上之多個功能元件之間移動照射，藉此 在相鄰功能元件間之正下方形成格子狀延伸之切斷預定部 9 ° 形成切斷預定部9後，如第12 A圖所示，藉薄片伸展裝 置30使黏著薄片20之周圍朝外側拉伸以使黏著薄片20 伸展。藉黏著薄片20之伸展，以切斷預定部9爲起點在 厚度方向上產生龜裂’此龜裂延伸到達矽晶圓11之表面3 和裏面1 7。藉此，矽晶圓1 1能依每個功能元件以良好之 精確度切斷，進而能得出各有1個功能元件之各個半導體 晶片25。 另外，這時，相鄰之半導體晶片25、25成對向之切斷 面25a、25a初期，係處於密接之狀態’但隨著黏著薄片 20之伸展而逐漸分離’因此’與切斷砂晶圓11之同時密 接於砂晶圓1 1之裏面1 7之雙面黏結樹脂層2 3也沿著切 斷預定部9而被切斷。 -24- 200924113 再者’薄片伸展裝置30有在形成切斷預定部9之 在載置矽晶圓1 1之台上之情形，也有未設在台上之 。若是未設在台上之情形時則被載置於台上之矽晶U 在形成切斷預定部9後係藉移送措施被移動到設有薄 展裝置30之其它之台上。 在黏著薄片2 0結束伸展後，如第12B圖，從裏面 黏著薄片2 0照射紫外線，俾使U V硬化樹脂層2 2硬 藉此，降低UV硬化樹脂層2 2和雙面樹脂層2 3之密 。另外，紫外線之照射也可在開始伸展黏著薄片2 0 進行。 接著，如第1 3 A圖所示，使用拾取裝置之吸著筒夾 序拾取半導體晶片25。這時，雙面黏結樹脂層23係 斷成與半導體晶片2 5相同之外形，另外，雙面黏結 層23和UV硬化樹脂層22之密接力因降低，故半導 片25在被切斷之雙面黏結樹脂層23密接於半導體晶J 之裏面之狀態下被拾取。又，如第1 3 B圖所示，將半 晶片2 5經密接於其裏面之雙面黏結樹脂層2 3而被載 引線框27之模墊上，接著藉加熱行塡料接合。 如上述，矽晶圓1 1之切斷方法係以藉多光子吸收 之熔融處理領域13 ’沿著用於切斷矽晶圓11所需之 預定線在矽晶圓1 1內部形成切斷預定部9。因此之故 伸展黏貼於矽晶圓11之黏著薄片2 0後即能沿著切斷 部9以良好精確度切斷矽晶圓11’進而得出半導體 25。這時，相鄰之半導體晶片25、25成對向之切斷面 時設 情形 II 1 1 片伸 側對 化。 接力 之前 等依 被切 樹脂 體晶 ^ 25 導體 置於 形成 切斷 ，在 預定 晶片 25a -25- 200924113 、25a初期係處於密接狀態，隨著黏著薄片2〇之伸展而逐 漸分離’因此，連密接在矽晶圓1 1之裏面〗7之雙面黏結 樹脂層2 3也沿著切斷預定部9被切斷。因此，相較於不 切斷底材21而切斷矽晶圓1 1及雙面黏結樹脂層2 3之情 形’能以極佳效率沿著切斷預定部9切斷矽晶圓1 1及雙 面黏結樹脂層23。 而且，相鄰之半導體晶片25、25成對向之切斷面25a、 25a初期因係相互接，故切斷之各個半導體晶片25與切斷 之各個雙面黏結樹脂層2 3之外形約略相同，進而也能防 止雙面黏結樹脂自各半導體晶片25之切斷面25a、25a被 擠出。 以上之矽晶圓1 1之切斷方法，如第1 4 A圖所示，一直 到伸展黏著薄片2 0之前止之期間，在矽晶圓1 1上不會以 切斷預定部9爲起點產生龜裂，但也可，如第MB圖所示 ，在伸展黏著薄片20之前即以切斷預定部9爲起點使產 生龜裂1 5，使此龜裂1 5延伸到矽晶圓1 1之表面3和裏面 17。產生龜裂15之方法例如有用刀口等之應力施加裝置 沿著切斷預定部9抵住矽晶圓1 1之裏面1 7，沿著切斷預 定部9使矽晶圓1 1產生彎曲應力，剪斷應力之方法，對 矽晶圓11賦與溫度差，沿著切斷預定部9使矽晶圓1 1產 生熱應力之方法。 這樣子，在形成切斷預定部9後沿著切斷預定部9使矽 晶圓11產生應力，而沿著切斷預定部9切斷矽晶圓11時 則能得出以極佳之精確度切斷之半導體晶片25。又’這種 -26- 200924113 情形是在伸展黏貼在矽晶圓i丨之黏著薄片2〇時相鄰半導 體晶片25、25成對向之切斷面2Sa、25a係自相互密接狀 態’隨著黏著薄片2 0之伸展而分離，因此，密接於矽晶 圓1 1之裏面17之雙面黏結樹脂層23也沿著切斷面25a 而被切斷。因此’藉此切斷方法，相較於不切斷底材21 而以刀片切斷矽晶圓Π及雙面黏結樹脂層2 3之情形’也 能以極佳之效率沿著切斷預定部9切斷矽晶圓1 1及雙面 黏結樹脂層2 3。 另外’薄化矽晶圓11之厚度時，即使不沿著切斷預定 部9產生應力，也有，如第圖所示，以切斷預定部9 爲起點之龜裂1 5延伸到達矽晶圓1 1之表面3和裏面1 7 之情形。 另外’如第1 5 A圖所示，在矽晶圓1 1之內部接近表面 3處形成藉熔融處理領域13所產生之切斷預定部9，使此 龜裂1 5延伸到表面3時則能將切斷得出之半導體晶片2 5 之表面（亦即，功能元件形成面）之切斷精確度作得極高。 另外一方面，如第1 5 B圖所示，在矽晶圓1 1內部接近裏 面1 7處形成藉熔融處理領域1 3所產生之切斷預定部9， 使龜裂1 5延伸到達裏面1 7時則藉伸展黏著薄片2 0能以 良好精確度切斷雙面黏結樹脂層23。 其次，將說明使用日本林得庫公司之「LE-5 000 (商品名 )」作爲黏著薄片20之實驗結果。第16A、B及丨7A、B 圖示出在矽晶圓1 1之內部形成藉熔融處理領域1 3所產生 之切斷預定部9後伸展黏著薄片20之際之一連串之狀態 -27- 200924113 之模式圖，第1 6A圖係開始伸展黏著薄片20後瞬間之狀 態，第1 6B圖係黏著薄片20在伸展中之狀態，第1 7A圖 係黏著薄片20伸展結束後之狀態，第1 7B圖係拾取半導 體晶片2 5時之狀態。 如第1 6A圖所示，在黏著薄片20開始伸展後之瞬間， 矽晶圓Π係沿著切斷預定部9被切斷，相鄰半導體晶片 25成對向之切斷面25a、25a係處於密接狀態。這時，雙 面黏結樹脂層2 3尙未被切斷。而，如第16 B圖所示，隨 著黏著薄片2〇之伸展，雙面黏結樹脂層23被撕裂那樣沿 著切斷預定部9被切斷。 這樣子，當黏著薄片2 0結束伸展時則，如第17 A圖所 示，雙面黏結樹脂層23也依每個半導體晶片25被切斷。 這時，在相互分離之半導體晶片25、25間之黏著薄片20 之底材21上殘存一層薄的雙面黏結樹脂層23之一部份 23b。另外，與半導體晶片25 —起被切斷之雙面黏結樹脂 層23之切斷面23a係以半導體晶片25之切斷面25a爲基 準形成若干凹狀。藉此’確實地防止各個半導體晶片25 之切斷面25a擠出雙面黏結樹脂。又，如第17B圖所示， 能使用吸著筒夾將半導體晶片25與切斷之雙面黏結樹脂 層2 3 —起拾取。 另外’雙面黏結樹脂層2 3若係由非伸縮性材料作成之 情形時則，如第1 8圖所示’在相互分離之半導體晶片2 5 、25間之黏著薄片20之底材21上不會殘留雙面黏結樹脂 層2 3。藉此，能使半導體晶片2 5之切斷面2 5 a和密接於 -28- 200924113 其裏面之雙面黏結樹脂層23之切斷面23 a切略一致。 另外，如第19A圖所示，也可將具有底材21及UV硬 化樹脂層22之黏著薄片20經該UV硬化樹脂層22而黏 貼矽晶圓1 1之裏面1 7，在形成藉熔融處理領域所產生之 切斷預定部9後，如第19B圖所示，將黏著薄片20之周 圍朝外側伸展，藉此將矽晶圓1 1切斷成半導體晶片2 5。 這種情形，相較於保留黏著薄片20以刀片切斷矽晶圓之 情形，能以極佳之效率沿著切斷預定部9切斷矽晶圓1 1。 又’使用含有底材21及UV硬化樹脂層22之黏著薄片 2 〇之矽晶圓1 1之切斷方法，如參照第1 9 B圖所作之說明 ’不是只有在伸展黏著薄片20前止，在矽晶圓11上不產 生以切斷預定部9爲起點之龜裂15之情形，如第20A及 20B圖所示，也有在伸展黏著薄片20(第20B圖）前，使以 切斷預定部9爲起點之龜裂15到達矽晶圓π之表面3和 裏面17之情形（第20A圖）。另外，如第21A、B圖所示， 也可在伸展黏著薄片20(第2 1B圖）前，使以切斷預定部9 爲起點之龜裂15延伸到達矽晶圓u之表面3(第21A圖） ，或者也可如第WA及22B圖所示，在伸展黏著薄片20( 第22B圖）前，使以切斷預定部9爲起點之龜裂1 5延伸到 達矽晶圓11之裏面17(第22A圖）。 下文將更具體地說明本發明有關之半導體基板之切斷方 法之良好第2實施形態。另外，第2 3〜2 7 c圖係爲沿著第 23圖之砂晶圓之ΧΙΙΙ-Χΐπ線之部份斷面圖。 如第2 3圖所示，在作爲加工對象物之矽晶圓（半導體基 -29- 200924113 板）1 1之之表面3上，多數之功能元件2 1 5係沿著與取向 平坦1 6平行之方向和垂直方向以矩陣狀形成圖樣。接著 如下述那樣依每個功能元件2 1 5切斷矽晶圓1 1。 首先，如24A圖所示，在矽晶圓1 1之表面3側黏貼保 護膜1 8以被覆功能元件2 1 5。此保護膜1 8係爲用於保護 功能元件2 1 5外，另同時把持矽晶圓1 1。黏貼保護膜1 8 後，如第24B圖所示，硏磨矽晶圓1 1之裏面1 7俾使矽晶 圓1 1達到既定之厚度。接著，另對裏面1 7施予化學浸蝕 以平滑裏面1 7。這樣子，將厚度約3 5 0 μηι之矽晶圓1 1 薄化成例如1 0 0 μηα。將矽晶圓1 1薄化後即對保護膜1 8 照射紫外線。藉此，使係爲保護膜1 8之黏著層硬化，進 而容易自矽晶圓1 1剝離保護膜1 8。 接著，使用雷射加工裝置在矽晶圓1 1之內部形成切斷 起點領域。亦即，如第2 5 Α圖所示，在雷射加工裝置之載 置台19上，將矽晶圓11之裏面17朝上藉真空吸著固定 保護膜1 8，將切斷預定線5成格子狀地設定在相鄰之功能 元件2 1 5、2 1 5之間延伸（參照第2 3圖之兩點虛線）。又， 如第25B圖所示，將裏面17作爲雷射光入射面在矽晶圓 1 1之內部對合集光點P ’以產生上述之多光子吸收之條件 照射雷射光L ’移動載置台1 9使集光點P沿著切斷預定 線5相對地移動。藉此，如第2 5 C圖所示，在矽晶圓1 1 之內部沿著切斷預定線5藉熔融處理領域1 3形成切斷起 點領域9。 接著’自載置台19取出有黏貼保護膜18之矽晶圓11， -30- 200924113 如第26A圖所示，在矽晶圓11之裏面17上，黏貼塗有雙 面黏結樹脂之薄膜220(例如，日本林得庫公司之「LE-5〇〇〇(商品名）」）。此塗有雙面黏結樹脂之薄膜220具有厚 度約100 μηι程度，能伸展之伸張薄膜（把持構件）221，在 此伸張薄膜221上經層厚數μπι程度之UV硬化樹脂層有 具備作爲雙面黏結用之接著劑之雙面黏結樹脂層223。亦 即’使雙面黏結樹脂層223插置在中間而將伸張薄膜221 黏貼於矽晶圓11之裏面17。另外，在伸張薄膜221之周 緣部份上設有薄膜伸展裝置3 0。俟黏貼塗有雙面黏結樹脂 之薄膜220後則，如第26Β圖所示，自矽晶圓1 1之表面 3側剝離保護膜1 8，著，如第2 6 C圖所示，對伸張薄膜 22 1照射紫外線。藉此，使係爲伸張薄膜22 !之黏著層之 UV硬化樹脂層硬化，進而容易自伸張薄膜221剝離雙面 黏結樹脂層2 2 3。 接著，如第27Α圖所示，藉薄片伸展裝置30使伸張薄 膜2 2 1伸展而將伸張薄膜2 2 1之周緣部份朝外側拉伸。藉 伸張薄膜22 1之伸展，以切斷起點領域9爲起點在厚度方 向上產生龜裂’此龜裂最終到達砂晶圓11之表面3和裏 面1 7。藉此，能沿著切斷預定線5以良好精確度切斷矽晶 圓11’進而得出多數各具有1個功能元件215之半導體晶 片25。又，這時，相鄰之半導體晶片25、25成對向之切 斷面25a、25a係隨著伸張薄膜221之伸展而自密接狀態 逐漸分離之故’與切斷砂晶圓1 1之同時密接於砂晶圓1 1 之裏面1 7之雙面黏結樹脂層223也沿著切斷預定線5被 -31 - 200924113 切斷。 接著，如第27B圖所示，使用吸著筒夾將半導體晶片 25逐個拾取。這時，雙面黏結樹脂層223係被切斷成與半 導體晶片25相同之外形，另外，雙面黏結樹脂層223和 伸張薄膜221之密接力降低之故，半導體晶片25其裏面 係處於與切斷之雙面黏結樹脂層223密接之狀態下被拾取 。又，如第27C圖所示，將半導體晶片25經密接於其裏 面之雙面黏結樹脂層223而被載置於引線框27之模墊， 接著藉加熱而行塡料接合。 上述那樣之矽晶圓1 1之切斷方法，係以表面3上形成 有功能元件2 1 5之矽晶圓Π作爲加工對象物，將其裏面 1 7作爲雷射光入射面，在矽晶圓1 1之內部對合集光點p 照射雷射光。藉此，在矽晶圓1 1之內部產生多光子吸收 ，進而沿著切斷預定線5 ’在矽晶圓1 1之內部形成藉熔融 處理領域13所產生之斷起點領域9。這時，將半導體基板 之裏面作爲雷射光之入射面之理由係若將表面作爲雷射光 入射面時則功能元件有妨礙到雷射光之入射之虞。這樣子 ’在矽晶圓Π內部形成切斷起點領域9時能自然地或施 加較小之力使以切斷起點領域9爲起點產生龜裂，並能使 此龜裂延伸到達矽晶圓1 1之表面3和裏面1 7。因此，在 形成切斷起點領域9後將雙面黏結樹脂層2 2 3插置在中間 而將伸張薄膜221黏貼在砂晶圓11之裏面17，接著，伸 展此伸張薄膜2 2 1後沿著切斷預定線5被切斷之矽晶圓1 1 之切斷面25a、25a則隨著伸張薄膜221之伸展而自密接 -32- 200924113 狀態逐漸分離。藉此，存在於矽晶圓1 1和伸張薄膜22 1 間之雙面黏結樹脂層223也沿著切斷預定線5而被切斷。 於是，相較於用刀片切斷之情形，能以極佳之效率，沿著 切斷預定線5切斷矽晶圓1 1及雙面黏結樹脂層223。 而且，沿著切斷預定線5切斷之矽晶圓1 1之切斷面25a 、25 a初期因係相互密接，故被切斷之各個矽晶圓1 1和被 切斷之各個雙面黏結樹脂層223之外形幾乎相同，因此， 也能防止雙面黏結樹脂自各個之矽晶圓11之切斷面25a 被擠出。 再者，在矽晶圓1 1之內部形成切斷起點領域9之前硏 磨矽晶圓1 1之裏面1 7俾矽晶圓具有既定厚度。這樣子， 藉將矽晶圓1 1薄化成既定之厚度，能沿著切斷預定線5 以更佳之精確度切斷矽晶圓1 1及雙面黏結樹脂層223。 (產業上之利用可能性） 如上說明，依本發明有關之半導體基板之切斷方法，能 以良好效率同時切斷半導體基板和雙面黏結樹脂層。 (五）圖式簡單說明： 第1圖係本實施形態有關之雷射加工方法所執行之雷射 加工中之半導體基板之平面圖。 第2圖係沿著第1圖所示之半導體基板之Π-Π線之斷 面圖。 第3圖係本實施形態有關之雷射加工方法所執行之雷射 加工後之半導體基板之平面圖。 第4圖係沿著第3圖所示之半導體基板之1V_IV線之斷 -33- 200924113 面圖。 第5圖係著第3圖所示之半導體基板之V-V線之斷面圖 〇 第6圖係藉本實施形態有關之雷射加工方法切斷之半導 體基板之平面圖。 第7圖係表示藉本實施形態有關之雷射加工方法切斷之 矽晶圓之一部份之斷面之照片之圖。 第8圖係示出本實施形態有關之雷射加工方法上雷射光 波長與矽基板內部之透射率之關係之曲線圖。 第9圖係本實施形態有關之雷射加工裝置之槪略構成圖 〇 第1 0圖係用於說明本實施形態有關之雷射加工裝置所 執行之切斷預定部之形成步驟之流程圖。 第1 1 A及1 1 B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之模式圖，其中第11A圖係示出黏著薄片黏貼矽 晶圓後之狀態，第π B圖係示出在矽晶圓內部形成藉熔融 處理領域所產生之切斷預定部後之狀態之圖。 第12A及12B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之模式圖，其中第12A圖係黏著薄片伸展後之狀 態，第1 2B圖係黏著薄片被照射紫外線之狀態。 第1 3 A及1 3 B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之模式圖，其中第13A圖係被切斷之雙面黏結樹 脂層和半導體晶片同時拾取之狀態，第1 3B圖係半導體晶 片經雙面黏結樹脂層而接合於引線框之狀態。 -34- 200924113 第14A及14B圖係示出本實施形態有關之矽晶圓之切斷 方法上之矽晶圓與切斷預定部之關係之模式圖’其中第 14A圖係示出未產生以切斷預定部爲起點之龜裂之狀態’ 第14B圖係示出以切斷預定部爲起點之龜裂到達矽晶圓之 表面和裏面之狀態。 第1 5 A及1 5 B圖係本實施形態有關之矽晶圓之切斷方法 上之矽晶圓與切斷預定部之關係之模式圖，其中第15A圖 係示出以切斷預定部爲起點之龜裂到達矽晶圓表面之狀態 ，第1 5 B圖係示出以切斷預定部爲起點之龜裂到達矽晶圓 之裏面之狀態。 第1 6A及1 6B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之一實施例之模式圖，其中第16A圖係示出黏著 薄片開始伸展後瞬間之狀態，第1 6B圖係示出黏著薄片伸 展中之狀態。 第1 7A及1 7B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之一實施例之模式圖，其中第17A圖係示出黏著 薄片伸展完成後之狀態，第1 7B圖係示出拾取半導體晶片 時之狀態。 第1 8圖係用於說明本實施形態有關之矽晶圓之切斷方 法之其它實施例之模式圖。 第1 9A及1 9B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之其它實施例，未產生以切斷預定部爲起點之龜 裂之情形，其中第1 9 A圖係示出藉熔融處理領域形成切斷 預定部後之狀態，第1 9B圖係示出黏著薄片伸展後之狀態 -35- 200924113 第20A及20B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之其它實施例以切斷預定部爲起點之龜裂到達矽 晶圓之表面和裏面之情形，其中第20A圖係示出藉熔融處 理領域形成切斷預定部後之狀態，第20B圖係示出黏著薄 片伸展後之狀態。 第21A及21B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之其它實施例以切斷預定部爲起點之龜裂到達矽 晶圓之表面之情形，其中第2 1 A圖係示出藉熔融處理領域 形成切斷預定部後之狀態，第21B圖係示出黏著薄片伸展 後之狀態。 第22 A及22B圖係用於說明本實施形態有關矽晶圓之切 斷方法其它實施例以切斷預定部爲起點之龜裂到達矽晶圓 之裏面之情形，其中第22A圖係示出藉熔融處理領域形成 切斷預定部後之狀態，第22B圖係示出黏著薄片伸展後之 狀態。 第23圖係本實施形態之半導體基板之切斷方法中，作 爲加工對象物之矽晶圓之平面圖。 第24A〜24C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖’其中第24A圖係示出保護膜黏貼於矽 晶圓之狀態，第2 4 B圖係示出矽晶圓被薄化之狀態，第 2 4 C圖係示出保護膜被紫外線照射之狀態。 第25A〜25C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖，其中第25A圖係示出矽晶圓及保護膜 -36- 200924113 固定於載置台上之狀態，第25B圖係示出矽晶圓被雷射光 照射之狀態，第25C圖係示出矽晶圓之內部形成切斷起點 領域之狀態。 第26A~26C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖，其中第26A圖係示出塗佈有雙面黏結 樹脂之薄膜黏貼在矽晶圓上之狀態，第26B圖係示出自矽 晶圓剝離保護膜之狀態，第26C圖係示出伸張薄膜被照射 紫外線之狀態。 第27A-27C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖，其中第27C圖係示出伸張薄膜伸展後 之狀態，第27B圖係示出被切斷之雙面黏結樹脂層與半導 體晶片同時被拾取之狀態，第27C圖係示出半導體晶片經 雙面黏結樹脂層接合於引線框之狀態。 主要部分之代表符號說明： 1 半 導 體 基 板 3 表 面 5 切 斷 預 定 線 7 改 質 領 域 9 切 斷 預 定 部 11 矽 晶 圓 13 熔 融 處 理 領 域 17 矽 晶 圓 之 裏 面 18 保 護 膜 20 黏 著 薄 片 -37- 200924113 2 1 底材 22 UV硬化樹脂層 23 雙面黏結樹脂層 25 半導體晶片 25a 半導體晶片之切斷面 30 薄片伸展裝置 100 雷射加工裝置 10 1 雷射光源 102 雷射光源控制部 103 分色鏡 105 集光用透鏡 107 載置台 109 X軸台 111 γ軸台 113 Z軸台 115 台控制部 119 光束分離器 121 攝影元件 12 3 結像透鏡 125 攝影資料處理部 127 整體控制部 129 監視器 215 功能元件 -38-。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 (2) Prior Art: In the prior art, the following technique is described in Japanese Laid-Open Patent Publication No. 2002-158878, and Japanese Patent Laid-Open No. 2000-104040. First, the adhesive sheet is adhered to the inside of the semiconductor wafer by the adhesive sheet, and then the semiconductor wafer is cut by a blade in a state where the semiconductor wafer is held on the adhesive sheet to obtain a semiconductor wafer. Further, when the semiconductor wafer on the adhesive sheet is picked up, the double-sided adhesive resin is peeled off from the adhesive sheet together with the respective semiconductor wafers. Thereby, the operation of applying an adhesive or the like to the inside of the semiconductor wafer can be omitted, and the semiconductor wafer can be attached to the lead frame. However, in the above technique, when the semiconductor wafer held on the adhesive sheet is cut by the blade, the adhesive sheet is not cut, but the double-sided adhesive resin existing between the semiconductor wafer and the adhesive sheet is surely cut. Floor. Therefore, in this case, cutting the semiconductor wafer with a blade requires special care. (3) SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of such circumstances, and an object thereof is to provide a method of cutting a semiconductor substrate which can cut a semiconductor substrate together with a double-sided adhesive resin layer with good efficiency. In order to achieve the above object, a method for cutting a semiconductor substrate according to the present invention includes the following operations: forming a work, stacking a light spot on a semiconductor substrate adhered to a sheet via a double-sided adhesive resin layer, and irradiating - 5-200924113 Laser light, whereby a modified field due to multiphoton absorption is formed inside the semiconductor substrate, and the cutting target portion is formed by the modified field; and the cutting operation is performed, and the cutting predetermined portion is stretched The sheet cuts the semiconductor substrate and the double-sided adhesive resin layer along the predetermined cutting portion. In the method of cutting a semiconductor substrate, the laser beam is irradiated to the collecting spot inside the semiconductor substrate, and a multiphoton absorption phenomenon is generated inside the semiconductor substrate to form a modified region. Therefore, the cutting can be performed along the semiconductor substrate. The predetermined portion can be cut into a predetermined portion inside the semiconductor substrate. In this manner, after the predetermined portion to be cut is formed in the inside of the semiconductor substrate, cracks can be generated in the thickness direction of the semiconductor substrate with a small force starting from the predetermined portion to be cut. Therefore, after stretching the sheet adhered to the semiconductor substrate, the semiconductor substrate can be cut with good precision along the predetermined portion to be cut. At this time, the cut semiconductor wafer is initially in a close contact with the cut surface, and is separated as the sheet is stretched. Therefore, it is cut between the semiconductor substrate and the sheet along the predetermined cutting portion. Double-sided adhesive resin layer. Therefore, the semiconductor substrate and the double-sided adhesive resin layer are cut by the blade in comparison with the remaining sheet, and the semiconductor substrate and the double-sided adhesive resin layer can be cut along the predetermined cutting portion with excellent efficiency. Further, since the cut surfaces of the cut semiconductor substrates are in close contact with each other in the initial stage, the cut semiconductor substrates and the double-sided adhesive resin layers which are cut are approximately the same shape. It is possible to prevent the double-sided adhesive resin from being extruded from the cut surface of each semiconductor substrate. Further, the method for cutting a semiconductor substrate according to the present invention includes the following operation: forming a work, and collecting a light spot on a semiconductor substrate to which a thin film is adhered by a double-sided adhesive resin layer, at a light collecting point尖峰功-6 - 200924113 The laser beam is irradiated under the condition that the density of the density is lxl08 (W/cm2) or more and the pulse width is lps or less, thereby forming a modified field in the field of the melt processing in the semiconductor substrate, and the melting treatment is included. In the modified area of the field, the cutting-predetermined portion and the cutting operation are formed, and after the cutting-predetermined portion is formed, the semiconductor substrate double-sidedly-bonded resin layer is cut along the cutting-predetermined portion by the stretched sheet. In the method of cutting the semiconductor substrate, the inside of the semiconductor substrate is formed so that the peak power density at the light collecting point is lxl08 (W/cm2) or more and the pulse width is 1 μ5 or less. Conditionally illuminate the laser light. Therefore, the inside of the semiconductor substrate is locally heated by multiphoton absorption. Thereby, the field of the molten processing is formed inside the semiconductor substrate by heating. Since the field of the melt processing is an example of the above-described field of reforming, the method for cutting a semiconductor substrate can be excellent in efficiency in that the semiconductor substrate and the double-sided adhesive resin layer are cut by a blade as compared with the remaining sheet. The semiconductor substrate and the double-sided adhesive resin layer are cut along the predetermined cutting portion. Further, a method of cutting a semiconductor substrate according to the present invention includes the following operation: forming a laser light irradiated to a collection spot on a semiconductor substrate adhered to a sheet via a double-sided adhesive resin layer; Forming a modified region in the semiconductor substrate, forming a predetermined portion to be cut in the modified region, and cutting the semiconductor substrate and cutting both sides along the cutting portion by stretching the sheet after forming the predetermined portion Bond the resin layer. Moreover, this field of reformation also has a situation in the field after the fusion process. According to the method for cutting a semiconductor substrate, the semiconductor substrate and the double-sided adhesive resin layer are cut by a blade as compared with the method of cutting the semiconductor substrate described above, which is excellent in efficiency. The semiconductor substrate and the double-sided adhesive resin layer were cut along the cut-off predetermined portion along the cut line -7-200924113. However, the field of reformation has been formed by the absorption of many photons, and there are cases of other reasons. Further, a method of cutting a semiconductor substrate according to the present invention includes the following operation: forming a process of irradiating laser light onto a collection spot in a semiconductor substrate to which a sheet is pasted, thereby forming a inside of the semiconductor substrate In the field of reforming, the cutting target portion is formed by the modified region, and the cutting operation is performed, and after the cutting predetermined portion is formed, the semiconductor substrate is cut along the cutting predetermined portion by stretching the sheet. According to the method of cutting a semiconductor substrate, the semiconductor substrate can be cut along the predetermined cutting portion with excellent efficiency compared to the case where the semiconductor substrate is cut by a blade as compared with the remaining sheet. Further, in the method for cutting a semiconductor substrate according to the above aspect of the invention, the cutting portion is formed, or the predetermined portion can be cut as a starting point, and the crack reaches the surface of the laser light incident side of the semiconductor substrate, or can be cut off. The predetermined portion is a starting point for causing the crack to reach the inside of the side opposite to the incident side of the laser light incident on the semiconductor, or the predetermined portion may be cut as a starting point so that the crack reaches the surface of the incident surface of the laser light of the semiconductor substrate and the side opposite thereto . Further, a method of cutting a semiconductor substrate according to the present invention includes the following operation: forming a laser light irradiated to a collection spot in a semiconductor substrate adhered to a sheet via a double-sided adhesive resin layer, thereby In the semiconductor substrate, a modified region due to multiphoton absorption is formed, and a predetermined cutting portion is formed in the modified region. The cutting operation is performed, and after the operation of forming the predetermined cutting portion, the semiconductor substrate is cut along the predetermined cutting portion. Stress is generated, by -8 - 200924113, the semiconductor substrate is cut along the cutting-predetermined portion; and the cutting operation is performed, and after cutting the semiconductor substrate, the double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate by stretching the sheet . This method of cutting a semiconductor substrate also forms a modified region by multiphoton absorption, and can thereby form a predetermined portion to be cut inside the semiconductor substrate along the cutting line required for cutting the semiconductor substrate. Therefore, when the semiconductor substrate is subjected to stress along the cutting planned portion, the semiconductor substrate can be cut along the predetermined cutting portion with good precision. Further, when the semiconductor substrate which is cut and adhered to the semiconductor substrate is cut, the cut surfaces are opposed to each other, and are separated from each other as the sheet is stretched, and further exist between the semiconductor substrate and the sheet. The surface-bonded resin layer is cut along the cut surface of the semiconductor substrate. Therefore, in the case where the semiconductor substrate and the double-sided adhesive resin layer are cut by the blade as compared with the remaining sheet, the semiconductor substrate and the double-sided adhesive resin layer can be cut along the predetermined cutting portion with excellent efficiency. Further, since the cut semiconductor wafers are initially opposed to each other, the cut surfaces are closely adhered to each other. Therefore, the respective semiconductor substrates after cutting and the double-sided adhesive resin layers after cutting are approximately the same in shape, thereby preventing double-sidedness. The binder resin is extruded from the cut surface of each of the semiconductor substrates. Further, a method of cutting a semiconductor substrate according to the present invention includes the following operation: forming a work, and collecting a light spot on a semiconductor substrate adhered to a thin film by a double-sided adhesive resin layer to a peak of a light collecting point Laser light is irradiated under the condition that the power density is lxl 〇 8 (W/cm 2 ) or more and the pulse width is 1 μ 8 or less, thereby forming a modified field in the field of molten processing in the semiconductor substrate, and incorporating the field of the melt processing In the field of the cutting, the predetermined portion is cut, and the cutting operation is performed, and after the predetermined portion is cut, stress is generated on the semiconductor substrate along the predetermined cutting portion, whereby the semiconductor substrate is cut along the predetermined cutting portion. And the cutting operation, after the semiconductor substrate is cut, the double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate by stretching the sheet. Moreover, the method for cutting a semiconductor substrate according to the present invention includes the following operation: forming a work, and irradiating the collected light spot with the laser light inside the semiconductor substrate adhered to the sheet via the double-sided adhesive resin layer, thereby A modified region is formed inside the semiconductor substrate, and the predetermined portion is cut in the modified region; and the cutting operation is performed, and the semiconductor substrate is stressed along the predetermined cutting portion after the predetermined portion is formed, thereby cutting off The predetermined portion cuts the semiconductor substrate; and the cutting operation, and after cutting the semiconductor substrate, the stretched sheet is stretched to cut the double-sided adhesive resin layer along the cut surface of the semiconductor substrate. Moreover, this field of upgrading is also in the field of melting treatment. According to the method of cutting the semiconductor substrate, the semiconductor substrate and the double-sided adhesive resin layer are cut by a blade as compared with the method of cutting the semiconductor substrate described above. The efficiency cuts the semiconductor substrate and the double-sided adhesive resin layer along the predetermined cutting portion. In order to achieve the above object, a method of cutting a semiconductor substrate according to the present invention is a method of cutting a semiconductor substrate having a semiconductor substrate on which a functional element is formed along a line to be cut, and is characterized in that it includes the following Work: forming an operation, using the inside of the semiconductor substrate as the incident surface of the laser light to illuminate the collected light spot inside the semiconductor substrate to form a modified field, thereby changing the field of laser light incident along a predetermined line distance The surface of the cutting surface is formed at the inside of the predetermined distance; in the field of forming, after the cutting-off field is formed, the double-sided adhesive resin layer is provided with a holding member capable of stretching in the semiconductor substrate; and the cutting operation is performed. After the holding member is attached, the holding member is stretched, whereby the semiconductor substrate and the double-sided adhesive resin layer are cut along the line to cut. In the method of cutting a semiconductor substrate, a semiconductor substrate having functional elements formed on its surface is used as an object to be processed. Further, the inside of the semiconductor substrate is used as a laser light incident surface, and the light spot is collected and irradiated with the laser light inside the semiconductor substrate, whereby, for example, multiphoton absorption or equivalent light absorption is generated, and further, the cutting schedule is performed. The line forms a starting point of cutting in the interior of the semiconductor substrate due to the field of modification. In this case, when the inside of the semiconductor substrate is used as the incident surface of the laser light, if the surface is used as the incident surface of the laser light, the functional element may hinder the incidence of the laser light. In this way, when the cutting starting point region is formed inside the semiconductor substrate, cracks can be generated from the starting point of the cutting starting point naturally or by applying a small force, and the crack can reach the surface of the semiconductor substrate and inside. Therefore, after the cutting starting point region is formed, the stretchable holding member is placed on the inside of the semiconductor substrate via the double-sided adhesive resin layer, and when the holding member is stretched, the cut surface of the semiconductor substrate cut along the line to cut is cut. Then, the extension of the holding member is separated from the state of the close contact. Thereby, the double-sided adhesive resin layer existing between the semiconductor substrate and the holding member is cut along the line to cut. Thus, the semiconductor substrate and the double-sided adhesive resin layer can be cut along the line to cut with excellent efficiency as compared with the case of cutting with a blade. Further, since the cut surfaces of the semiconductor substrates which are cut along the line to be cut are initially adhered to each other, the respective semiconductor substrates which are cut and the respective double-sided adhesive resin layers which are cut are formed outside the shape -11 - 200924113 is about the same, which prevents the double-sided adhesive resin from being extruded from the various semiconductor base sections. Here, the functional element means, for example, a semiconductor operating layer grown by a crystal, a light receiving element such as a photodiode, a light emitting element of a laser light, a circuit element formed as a circuit, or the like. Further, it is preferable to honing the inside of the semiconductor to make the thickness of the semiconductor substrate a predetermined thickness before forming the cutting start point region. In this way, by honing the inside of the semiconductor substrate to a predetermined thickness, the half-plate and the double-sided adhesive resin layer can be cut more accurately along the line to be cut. Further, the term "honing" means cutting, chemical etching, or the like. In addition, the field of upgrading includes the field of melt processing. If the additive is a semiconductor substrate, the molten region is formed by irradiation of laser light. In the field of the above-mentioned modification, the semiconductor substrate can be easily cut, and the semiconductor substrate and the double-sided adhesive resin layer can be cut by cutting the predetermined line with good efficiency. Further, when the cutting of the semiconductor substrate according to the present invention is formed in a predetermined cutting area, the starting point region may be cut to reach the surface of the semiconductor substrate, or the starting point region may be cut to reach the semiconductor substrate. Inside, or you can cut off the starting area to make the crack reach the surface and inside of the semiconductor substrate. (4) Embodiments (Best Mode for Carrying Out the Invention) Hereinafter, a semiconductor substrate according to the present invention will be described in detail with reference to the drawings, and a body substrate such as a pole body is formed to be a predetermined conductor base and a smasher object processing. For example, the rate is along the law, and the starting point of the turtle is used as the starting point for the cut-off method of the -12-200924113 method. In the method for cutting a semiconductor substrate according to the present embodiment, the laser beam is irradiated to the collected light spot inside the semiconductor substrate, whereby a modified field generated by multiphoton absorption is formed inside the semiconductor substrate, and the quality is improved. The field forms a cut-off portion. Therefore, before describing the method of cutting a semiconductor substrate according to the present embodiment, a laser processing method for forming a predetermined cutting portion will be described centering on multiphoton absorption. The photon energy h υ is optically transparent if it is smaller than the material's band gap Ec. Therefore, the condition to be absorbed by the material is h υ > E (3. However, gp is optically transparent, and if the intensity of the laser light is made very large, the condition of nh υ > EG (n = 2, 3) (4, ...), the material will absorb. This phenomenon is called multiphoton absorption. In the case of pulse wave, the intensity of the laser light is determined by the peak power density of the spot light of the laser light (W/cm2). For example, conditions with a peak power density above 1 X 1 08 (W/cm2) will result in multiphoton absorption. The peak power density is (the energy of each pulse of the laser light at the collection point) + (the beam spot of the laser light) (beam spot) The area of the X-pulse width is obtained. In addition, in the case of a continuous wave, the intensity of the laser light is determined by the electric field intensity (W/cm2) of the spot light of the laser light. 6 is a view showing a laser processing principle according to the present embodiment using such multiphoton absorption. Fig. 1 is a plan view of a semiconductor substrate 1 in laser processing, and Fig. 2 is a semiconductor substrate 1 shown in Fig. 1. Section II-II line diagram, Fig. 3 is a semiconductor substrate 1 after laser processing The plan view, Fig. 4 is a cross-sectional view taken along line IV - 1V of the semiconductor substrate 1 shown in Fig. 3, and Fig. 5 is taken along the line vv of the conductor substrate 1 of the half 200924113 shown in Fig. 3. Fig. 6 is a plan view of the cut substrate 1. As shown in Figs. 1 and 2, an imaginary line extending in a predetermined shape is cut at a predetermined line 5 ° required for the semiconductor substrate 1 on the surface of the semiconductor substrate 1 ( The predetermined line 5) may be actually cut on the semiconductor substrate 1. The conditions of the laser processing system in the present embodiment are such that the collecting conductor substrate 1 is irradiated with laser light inside the semiconductor substrate 1 to form a modified field. The location where the laser beam L collects light. By moving the laser beam along the cutting line 5 (that is, moving the laser beam along the arrow A), the collecting point P moves along the line 5 to be cut as shown in the figure 3-5. The cutting planned line 5 forms the modified field 7 only in the semiconductor base, and the laser processing method in which the modified field 7 forms the cutting pre-implementation method does not cause the semiconductor substrate 1 to generate heat by the semiconductor base light L to form a modified field. The light L penetrates the semiconductor substrate 1 and is absorbed inside the semiconductor substrate 1, and further In the field of reformation 7. In the Japanese, the semiconductor base: 3 hardly absorbs the laser light, and therefore, the semiconductor substrate 1 is melted. On the cut semiconductor substrate 1, if the conductor substrate 1 is to be cut, the source substrate 1 is generated from the starting point. Cracking, therefore, the semiconductor substrate 1 can be cut with a small force as in the first place. Therefore, the surface of the half 3 does not cause unnecessary cracks and the semiconductor can be cut off. The semiconductor substrate: the rear semiconductor 3 has a cutting line 5 which is a straight line drawn as a half of the multi-light spot P, and the light collecting point is relatively moved. Thereby, the inside of the first plate 1 is determined Part 9. The plate 1 absorbs the lightning but causes the surface 3 of the surface of the multi-photon board 1 to be laser-free, and the conductor substrate 1 is the substrate 1 as shown in FIG. The cut off, there are two ideas below -14- 200924113. In the case where the predetermined portion is formed, an artificial force is applied to the semiconductor substrate 1, and the predetermined portion is cut as a starting point, and the semiconductor substrate is cracked and cut. This is the case, for example, when the thickness of the semiconductor substrate is large. The application of artificial force means, for example, that a bending stress is applied to the semiconductor substrate along the predetermined cutting portion of the semiconductor substrate, and the shear stress is applied or a temperature difference is applied to the semiconductor substrate to cause thermal stress. In the case where the cutting-predetermined portion is formed, the cutting-predetermined portion is used as a starting point to naturally crack in the cross-sectional direction (thickness direction) of the semiconductor substrate, and the semiconductor substrate is cut. For example, if the thickness of the semiconductor substrate is small, the predetermined portion can be formed by the modified region of one column, and if the thickness of the semiconductor substrate is large, the modified region can be formed by forming a plurality of columns in the thickness direction. The predetermined portion is cut. In addition, in the case of the natural cracking, the portion to be cut off is not preliminarily generated on the portion corresponding to the portion where the cutting portion is not formed, and only the portion corresponding to the predetermined portion to be cut can be cut off. Therefore, the cutting can be well controlled. In recent years, the thickness of a semiconductor substrate such as a germanium wafer has been thinned, so that this method of controlling the cutting method is effective. Further, in the present embodiment, the field of modification formed by multiphoton absorption is described in the field of melt processing described below. (1) The inside of the semiconductor substrate is irradiated with the laser beam at a spot intensity of lxl08 (w/cm2) or more and a pulse width of 1 or less. Thereby, the inside of the semiconductor substrate is locally heated by multiphoton absorption. Thereby heating forms a field of molten processing inside the semiconductor substrate. The field of melt processing refers to the field of remelting after a short melt, and the field of the molten state is the state of re-solidification from the molten state. It can also be said that the field of phase change is -15-200924113, and the crystal structure changes. field. Further, the field of the melt processing can also refer to the field of changing from a certain structure to another structure in a single crystal structure, an amorphous structure, or a polycrystalline structure. That is, for example, from the single crystal structure to the amorphous structure, from the single crystal structure to the polycrystalline structure, from the single crystal structure to the structure including the amorphous structure and the polycrystalline structure. In the case where the semiconductor substrate is in the form of a single crystal structure, the field of the molten processing is, for example, a structure of amorphous germanium. The upper limit of the electric field strength is, for example, lxl08 (w/cm2). The pulse width is, for example, preferably Ins to 200 ns. The inventors confirmed by experiment that a molten processing field was formed inside the germanium wafer. The experimental conditions are as follows. (A) Semiconductor substrate: germanium wafer (thickness 3 50 μm, outer diameter 4 inches) (Β) laser light source: semiconductor laser excitation Nd: YAG laser wavelength: 1 0 6 4 nm laser spot area: 3.14xl (T8cm2 vibration form: Q switching pulse vibration frequency: 100kHz Pulse width: 3 0 ns Output: 20μ <1/pulse Laser light quality: 偏 Polarization characteristics: linear polarized light (C) Light collecting lens Magnification: 50 times -16- 200924113 N. A. : 0. 55 Transmittance of laser light wavelength _ 60% (D) Movement speed of the mounting table on which the semiconductor substrate is placed: L〇〇mm Fig. 7 is a photograph showing a section of a portion of the wafer which was cut by laser processing under the above-described conditions. The inside of the wafer 1 1 forms a molten processing field 13 . In addition, The thickness direction of the molten processed field 13 formed by the above conditions is about 100 μm. The formation of the melt processing field 13 by multiphoton absorption will be explained below. Fig. 8 is a graph showing the relationship between the wavelength of the laser light and the transmittance inside the germanium substrate. but, The reflection components of the surface side and the back side of the ruthenium substrate are removed to show only the internal transmittance. The thickness t of the tantalum substrate is 50 μm, 100 μηι, 200 μιη, 500 μηι, The above relationship of 1000 μηι. E.g, About Nd: The wavelength of the YAG laser is 1 064 nm. When the thickness of the ruthenium substrate is 500 Å or less, it can be seen from the figure that 80% or more of the laser light penetrates the inside of the ruthenium substrate. The thickness of the germanium wafer 11 shown in Fig. 7 is 305 μm. Therefore, the field of molten processing produced by multiphoton absorption is formed near the center of the germanium wafer. That is, the part of the surface is 175 μm. Transmittance in this case, If you refer to the case of a wafer with a thickness of 200μηι, It is more than 90%, so there is very little laser light absorbed by the inside of the wafer U. Almost all transmission. This case means that the inside of the crucible wafer 1 1 does not absorb the laser light and forms a molten processing field 13 inside the crucible wafer 11 (i.e., does not form a molten processing field by the usual heating using laser light), The field of fusion processing is formed by multiphoton absorption. The use of multiphoton absorption to form a field of melt processing is, for example, Recorded in the National Fusion Society of Japan -17- 200924113, the main speech of the 66th episode (April 2000), Page 72 ~ Page 73 "By pico (? 4〇)(10" 12) The evaluation of the characteristics of the wafers performed by the second pulse laser. In addition, The crucible wafer is cracked in the cross-section direction starting from the cutting schedule formed by the molten processing field. The crack reaches the surface of the wafer and the inside is cut off. The cracks on the surface and inside of the wafer are also naturally growing. There are also cases of growing up by applying force on the wafer. In addition, From the cutting of the predetermined portion to the surface of the silicon wafer and the inside of the wafer, which is naturally cracked, There may be a case where cracking starts from a molten state in which the molten processing region forming the predetermined portion is formed, There is also a case where cracks are generated when resolidified from a molten state in the field of melting treatment in which the predetermined portion is formed. But in either case, The field of melt processing is only formed inside the germanium wafer. On the cut surface after the break, As shown in Figure 7, The field of melt processing only forms the interior. When the cutting pre-section is formed in the inside of the semiconductor substrate by the field of the molten processing, when the cutting is performed, Because it is not easy to produce cracks that are not necessary to deviate from the cut line, Therefore, it is easy to control the cutting. In addition, Considering the crystal structure of the semiconductor substrate and its cleavability, etc. If the area of the starting point of cutting is formed as follows, You can start with the cut-off starting point. With less force, And good precision, Cutting the semiconductor substrate, that is, In the case of a diamond-structured single crystal semiconductor such as 矽, Preferably, the cutting starting point region is formed along the direction of the (111) plane (the first split surface) and the (110) plane (the first split surface). In addition, In the case of a substrate made of a π-type π-type compound semiconductor of a GaAs sphalerite structure, it is preferable to form a cutting start region in the direction of the (1 1 0) plane. The face of the work section has a shape length that is melted in a certain shape, such as the field 0 plate 2, etc. -18- 200924113 In addition, If it is along the direction required to form the above-described cutting start point field (for example, Along the direction of the (11 1) plane on the single crystal germanium substrate, Or when the orientation is flat on the substrate in a direction orthogonal to the direction required to form the cutting start region, Then, based on the flatness of the orientation, the cutting starting point region along the direction required to form the cutting starting point region can be easily and accurately formed on the substrate. Next, a laser processing apparatus used in the above-described laser processing method will be described with reference to Fig. 9. 9 is a schematic diagram of a laser processing apparatus 1 . The laser processing apparatus 100 includes a laser light source 101 ′ that generates laser light L. The laser light source 1 is controlled to adjust the output and pulse of the laser light L. ο 1 laser light source control unit 1 〇 2, There is a dichroic mirror 103 that reflects the function of the laser light L and is configured to change the orientation of the optical axis of the laser light L by 90°. The light collecting lens 105 that collects the laser light L reflected by the dichroic mirror 103, The mounting table 107 of the processing object 1 irradiated with the laser light collected by the collecting lens 1 〇 5 is placed. An X-axis stage (stag e) 109 for moving the stage 1〇7 in the X-axis direction, The Y-axis table 111 that moves the mounting table 107 toward the Y-axis orthogonal to the X-axis, a Z-axis stage 113 for moving the mounting table in the Z-axis direction in a direction orthogonal to the X-axis and the Y-axis, And control these three stations 1 〇 9, 1 1 1, 1 1 3 mobile station control unit 1 1 5 . 2: The axial direction is a direction orthogonal to the surface 3 of the semiconductor substrate 1, Therefore, it becomes the focus direction of the laser light L incident on the semiconductor substrate. So, By moving the Z-axis stage 113 in the Z-axis direction, The light collecting point P of the laser light L can be aligned inside the semiconductor substrate 1. In addition, The movement of the concentrating point 0 in the -19-200924113 Χ (Υ) axis direction is performed by moving the semiconductor substrate 1 in the Χ (axis) axis direction by the 轴 (轴) axis stage 109 (111). The laser source 101 is a Nd that generates pulsed laser light: YAG laser. Can be used as a laser for the laser source 101, There is also Nd: YV04 laser, Nd : YLF laser and titanium sapphire laser. It is best to use Nd if it is a form of fusion processing: YAG laser, Nd : YV04 laser, Nd : YLF laser. In this embodiment, Although the processing of the semiconductor substrate 1 is performed by using pulsed laser light, However, continuous wave laser light can be used as long as it can cause multiphoton absorption. The laser processing apparatus 100 further includes an observation light source 1 17 for generating visible light of the semiconductor substrate 1 on which the illumination is placed on the mounting table 107. And a beam splitter 119 for visible light on the same optical axis as the dichroic mirror 1 〇 3 and the concentrating lens 156. The dichroic mirror 103 is disposed between the beam splitter 119 and the light collecting lens 105. The beam splitter 119 has half of the visible light reflected. One of the other functions of transmissive, And configured to change the orientation of the optical axis of the visible light by 90°. About half of the visible light generated from the observation light source 11 7 is reflected by the beam splitter. The reflected visible light passes through the dichroic mirror 103 and the collecting lens 1 〇 5 ', and illuminates the surface 3 including the planned cutting line 5 or the like of the semiconductor substrate 1. The laser processing apparatus 100 further includes a beam splitter H9' and an imaging element 1 2 1 and an image lens 1 2 3 disposed on the same optical axis as the dichroic mirror 103 and the light collecting lens 105. As the photographing element 1 2 1 there is, for example, a c C D camera. Irradiating the reflected light that includes the visible light that cuts off the surface 3 of the pre-twist line 4 _ penetrates the light-collecting lens 105, The dichroic mirror 103 'beam splitter Π9 -20- 200924113' is imaged by the imaging element 1 2 1 after being imaged on the junction lens 1 2 3 to become a photographic material. The laser processing apparatus 100 further includes a photographic data processing unit 125 for inputting the image data output from the photographic element 121. And controlling the laser processing apparatus 1 整体 the overall overall control unit 1 27 ’ and the monitor 1 29 . Photographic Data Processing Department 1 2 5 Based on photographic materials, The calculation is used to make the focus of the visible light generated by the observation light source 丨7 coincide with the focus data of the surface 3. then, Based on this focus, The table control unit 1 1 5 moves and controls the Z-axis table 1 1 3, With this, Align the focus of the visible light with the surface 3. then, The photographic data processing unit 丨25 operates as an autofocus unit. In addition, The photographic data processing unit 1 2 5 calculates image data such as an enlarged image of the surface 3 based on the photographic data. This image data is then sent to the overall control unit 1 2 7, After the various processes are executed by the overall control unit, they are sent to the monitor 1 29 . With this, An enlarged image or the like is displayed on the monitor 1 29 . The overall control unit 1 2 7 inputs the data from the station control unit 1 1 5 , And the photographic data processing unit 1 2 5 image material, etc. And based on these materials, Control laser light source control unit 102, Observation light source 1 17 and stage control unit 1 1 5, Take this Control the overall laser processing unit 100. then, The overall control unit 1 27 operates as a computer unit. Next, the steps of forming the cutting predetermined portion executed by the laser processing apparatus 100 composed as described above will be described with reference to Figs. 9 and 1 . Fig. 10 is a flow chart for explaining the steps of forming the cutting predetermined portion executed by the laser processing apparatus 100. The light absorption characteristic of the semiconductor substrate 1 is measured by a spectrophotometer or the like (not shown). According to the results of this measurement, The laser light source 101 which generates the laser light L which is transparent to the substrate 1 or has a low absorption wavelength is selected (S101). Then, The thickness of the semiconductor substrate 1 was measured. According to the measurement result of the thickness and the refractive index of the semiconductor substrate 1, The amount of movement of the semiconductor substrate 1 in the Z-axis direction is determined (S103). This is to make the spot P of the laser light L located inside the semiconductor substrate 1, The amount of movement in the Z-axis direction of the semiconductor substrate 1 with reference to the light-collecting point P of the laser light L positioned on the surface 3 of the semiconductor substrate 1. This movement amount is input to the overall control unit 1 27 . The semiconductor substrate 1 is placed on the mounting table 107 of the laser processing apparatus 100. also, The visible light is supplied from the observation light source 1 17 to illuminate the semiconductor substrate 1 (S1 05). The surface 3 of the semiconductor substrate 1 including the illumination cut-off portion 5 is photographed by the image pickup element 121. The cutting planned portion 5 is an imaginary line required for cutting the semiconductor substrate 1. The photographic material photographed by the photographic element 1 21 is sent to the photographic material processing unit 1 255. According to this photographic material, The photographic data processing unit 1 2 5 calculates the focus energy of the visible light of the observation light source 7 7 on the surface 3 of the semiconductor substrate 1 (S 107). This focus data is sent to the station control unit 1 15 . The stage control unit 1 1 5 moves the Z-axis stage 113 in the Z-axis direction based on the focus data (S109). Thereby, the visible light focus of the observation light source 1 17 is placed on the surface 3 of the semiconductor substrate 1. Further, the photographic data processing unit 丨25 calculates the enlarged image data of the surface 3 of the semiconductor substrate 含有 including the cut line 5 based on the photographic data. The enlarged image data is sent to the monitor 1 2 9 via the overall control unit 1 2 7 . Thereby, the enlarged image near the cut-off line 5 is displayed on the monitor 丨29. -22 - 200924113 The overall control unit 127 inputs the movement amount data determined in advance in step S103, This movement amount data is then sent to the station control unit 1 15 . The station control unit 1 1 5 is based on the movement amount data, The semiconductor substrate is moved in the Z-axis direction by the Z-axis stage 1 1 3 so that the position of the light-collecting spot P of the laser light L is inside the semiconductor substrate 1 (S1 1 1). then, Laser light L is generated from the laser source 01, The laser light L is irradiated onto the cutting planned line 5 of the surface 3 of the semiconductor substrate 1. The collection of the laser light L is caused by the position of the light spot P inside the semiconductor substrate 1, Therefore, the field of the molten processing is formed only inside the semiconductor substrate 1. also, Make the X-axis table 109, The Y-axis stage 1 1 1 is moved along the line to cut 5 by the cutting process line formed along the line to cut 5, and the planned cutting line 5 is formed inside the semiconductor substrate 1 to form a predetermined cutting portion (S113). By the above steps, Completing the steps of cutting the predetermined portion of the laser processing apparatus 100, On the other hand, a predetermined cutting portion is formed inside the semiconductor substrate 1. When a predetermined portion to be cut is formed in the inside of the semiconductor substrate 1, a small force can be generated to cause cracks in the thickness direction of the semiconductor substrate 1 along the predetermined portion to be cut. below, A method of cutting the semiconductor substrate 1 according to the present embodiment will be described. In addition, Here, A germanium wafer 11 belonging to a semiconductor wafer is used as a semiconductor substrate. First of all, As shown in Figure 11A, A sheet 20 is adhered to the inner portion 17 of the wafer 11 to cover the inside 17 of the wafer 11. The adhesive sheet 20 has a substrate 21 having a thickness of 100 μm. The substrate 21 is provided with a UV-curable resin layer 22 having a thickness of about μm. In addition, On the UV-curable resin layer 22, a double-sided adhesive resin as an adhesive for double-sided bonding is provided. -23- 200924113 Layer 23° Further, a plurality of functional elements are formed in a matrix on the surface of the tantalum wafer u. Here, The functional element is a light-emitting element such as a light-receiving element such as a photodiode, or a light-emitting element such as a laser diode. Or a circuit component or the like formed as a circuit. Then as shown in Figure 1 1 B, For example, by using the above-described laser processing apparatus 100', the laser light is irradiated from the surface 3 side to the collection spot P in the inside of the silicon wafer 1 1 , thereby forming a modified region in the interior of the germanium wafer 1 1 . Melt processing field 13 Thereby, the cutting process portion 9 is formed by the melt processing field 丨3. When the cutting planned portion 9 is formed, the laser light is moved and irradiated between a plurality of functional elements arranged in a matrix on the surface 3 of the 晶圆 wafer 1 1 . Thereby, a predetermined portion to be cut extending in a lattice shape is formed directly under the adjacent functional elements. 9° After the cutting planned portion 9 is formed, As shown in Figure 12A, The sheet stretching device 30 is used to stretch the periphery of the adhesive sheet 20 toward the outside to stretch the adhesive sheet 20. By stretching the sheet 20, A crack is generated in the thickness direction from the cutting planned portion 9 as the starting point reaches the surface 3 and the inner surface 17 of the silicon wafer 11. With this, 矽 Wafer 1 1 can be cut with good precision for each functional component. Further, each of the semiconductor wafers 25 each having one functional element can be obtained. In addition, At this time, Adjacent semiconductor wafer 25, 25 pairs cut off face 25a, In the early 25a, It is in a state of close contact, but gradually separates as the adhesive sheet 20 is stretched. Therefore, it is also adhered to the inner side of the sand wafer 1 1 while the sand wafer 11 is cut. The cutting predetermined portion 9 is cut and cut. -24- 200924113 Further, the sheet stretching device 30 has a state in which the cutting target portion 9 is placed on the stage on which the wafer 1 1 is placed, There are also no ones on the stage. In the case where it is not placed on the stage, the twin crystal U placed on the stage is moved to the other stage on which the thinning device 30 is provided by the transfer means after the cutting planned portion 9 is formed. After the adhesive sheet 20 ends stretching, As shown in Figure 12B, From the inside, the adhesive sheet 20 is irradiated with ultraviolet rays. 俾 making the U V hardened resin layer 2 2 hard, The density of the UV-curable resin layer 2 2 and the double-sided resin layer 2 3 is lowered. In addition, The irradiation of ultraviolet rays can also be carried out at the beginning of stretching the adhesive sheet 20. then, As shown in Figure 1 3 A, The semiconductor wafer 25 is picked up using the absorbing cylinder of the pickup device. At this time, The double-sided adhesive resin layer 23 is broken into the same shape as the semiconductor wafer 25. In addition, The adhesion between the double-sided adhesive layer 23 and the UV-curable resin layer 22 is lowered. Therefore, the half-lead sheet 25 is picked up while the cut double-sided adhesive resin layer 23 is in close contact with the inside of the semiconductor crystal J. also, As shown in Figure 1 3 B, The half wafer 25 is placed on the die pad of the lead frame 27 via the double-sided adhesive resin layer 2 3 which is closely adhered thereto. The material is then joined by heating. As above, The cutting method of the wafer 1 is to form the cutting planned portion 9 inside the crucible wafer 1 1 along the predetermined processing line for cutting the crucible wafer 11 by the molten processing region 13' by multiphoton absorption. Therefore, after the adhesive sheet 20 of the enamel wafer 11 is stretched and adhered, the ruthenium wafer 11' can be cut along the cut portion 9 with good precision to obtain the semiconductor 25. At this time, Adjacent semiconductor wafer 25, When 25 pairs of opposite sides are cut, the situation is set II 1 1 The sheet is stretched sideways. Before the relay is pressed , the resin crystal body is placed and the conductor is placed and cut off . On the scheduled wafer 25a -25- 200924113, The initial stage of 25a is in close contact. As the adhesive sheet 2 stretches, it gradually separates. Therefore, The double-sided adhesive resin layer 2 3 which is in close contact with the inside of the crucible wafer 1 1 is also cut along the cutting predetermined portion 9. therefore, When the tantalum wafer 11 and the double-sided adhesive resin layer 23 are cut without cutting the substrate 21, the tantalum wafer 1 1 and both sides can be cut along the cutting predetermined portion 9 with excellent efficiency. The resin layer 23 is bonded. and, Adjacent semiconductor wafer 25, 25% of the cut surface 25a, At the beginning of 25a, they were connected to each other. Therefore, each of the cut semiconductor wafers 25 has a shape similar to that of the cut double-sided adhesive resin layer 2, Further, it is also possible to prevent the double-sided adhesive resin from being cut from the cut surface 25a of each of the semiconductor wafers 25, 25a was squeezed out. The above method of cutting the wafer 1 1 , As shown in Figure 14A, Until the stretch of the adhesive sheet 20, Cracks are not generated on the crucible wafer 1 1 from the cutting planned portion 9 as a starting point. But yes, As shown in the MB image, Before the adhesive sheet 20 is stretched, the cutting portion 9 is used as a starting point to cause cracking 15 5 . This crack 15 is extended to the surface 3 and the inside of the wafer 1 1 . The method of generating the crack 15 is, for example, a stress applying device such as a knife edge, which is pressed against the inside of the silicon wafer 1 1 along the cutting predetermined portion 9. The 矽 wafer 11 is subjected to bending stress along the cutting predetermined portion 9, Method of shearing stress, Applying a temperature difference to the germanium wafer 11, A method of causing thermal stress to the crucible wafer 1 1 along the cutting planned portion 9. like this, After the cutting planned portion 9 is formed, stress is generated on the 晶圆 wafer 11 along the cutting predetermined portion 9. When the silicon wafer 11 is cut along the cutting planned portion 9, the semiconductor wafer 25 cut with excellent precision can be obtained. Further, in the case of -26-200924113, the adjacent semiconductor wafer 25 is stretched while being adhered to the adhesive sheet 2 of the wafer. 25% of the cut surface 2Sa, 25a is in a state of close contact with each other' as the adhesive sheet 20 is stretched apart, therefore, The double-sided adhesive resin layer 23 which is in close contact with the inner side 17 of the twin circle 1 is also cut along the cut surface 25a. Therefore, by this cutting method, The wafer Π and the double-sided adhesive resin layer 2 are cut by the blade without cutting the substrate 21, and the wafer 1 can be cut along the cutting portion 9 with excellent efficiency. And a double-sided adhesive resin layer 2 3 . In addition, when the thickness of the wafer 11 is thinned, Even if stress is not generated along the cutting portion 9, Also, As shown in the figure, The crack 15 extending from the predetermined portion 9 is extended to reach the surface 3 and the inner surface 1 of the wafer 1 1 . In addition, as shown in Figure 15A, A cutting portion 9 generated by the molten processing region 13 is formed at the inner near surface 3 of the crucible wafer 11 When the crack 15 is extended to the surface 3, the surface of the semiconductor wafer 25 which is cut can be cut off (i.e., The cutting accuracy of the functional element forming surface is extremely high. on the other hand, As shown in Figure 15B, A cutting portion 9 generated by the molten processing field 13 is formed near the inner surface of the crucible wafer 1 1 at a distance of 17 When the crack 15 is extended to the inside of the inside, the double-sided adhesive resin layer 23 can be cut with good precision by stretching the adhesive sheet 20. Secondly, The result of the experiment using "LE-5 000 (trade name)" of Lindeku Company of Japan as the adhesive sheet 20 will be described. 16A, B and 丨7A, B is a schematic view showing a state in which a series of states -27-200924113 are formed by stretching the adhesive sheet 20 after the cutting planned portion 9 generated by the molten processing region 13 is formed inside the crucible wafer 11. The first 16A figure begins to stretch the state immediately after the adhesive sheet 20 is stretched, Figure 16B shows the state in which the adhesive sheet 20 is stretched. The first 7A is a state after the end of the adhesive sheet 20 is stretched, The 1st 7B is a state in which the semiconductor wafer 25 is picked up. As shown in Figure 16A, At the moment when the adhesive sheet 20 begins to stretch, The crucible is cut along the cutting predetermined portion 9, The adjacent semiconductor wafer 25 is opposite to the cut surface 25a, The 25a system is in close contact. At this time, The double-sided adhesive resin layer 2 3尙 was not cut. and, As shown in Figure 16B, With the stretch of the adhesive sheet 2, The double-sided adhesive resin layer 23 is cut along the cutting predetermined portion 9 as it is torn. like this, When the adhesive sheet 20 ends stretching, As shown in Figure 17A, The double-sided adhesive resin layer 23 is also cut by each semiconductor wafer 25. At this time, On the semiconductor wafer 25 separated from each other, A portion 23b of a thin double-sided adhesive resin layer 23 remains on the substrate 21 of the 25 adhesive sheets 20. In addition, The cut surface 23a of the double-sided adhesive resin layer 23 which is cut together with the semiconductor wafer 25 is formed in a plurality of concave shapes on the basis of the cut surface 25a of the semiconductor wafer 25. Thereby, the cut surface 25a of each of the semiconductor wafers 25 is surely prevented from being extruded from the double-sided adhesive resin. also, As shown in Figure 17B, The semiconductor wafer 25 can be picked up together with the cut double-sided adhesive resin layer 2 3 using a suction collet. Further, when the double-sided adhesive resin layer 2 3 is made of a non-stretchable material, As shown in Fig. 18, the semiconductor wafers 25 separated from each other, The double-sided adhesive resin layer 2 3 does not remain on the substrate 21 of the adhesive sheet 20 of the 25 sheets. With this, The cut surface 25a of the semiconductor wafer 25 and the cut surface 23a of the double-sided adhesive resin layer 23 which are in close contact with the inside of the -28-200924113 can be made to be identical. In addition, As shown in Figure 19A, The adhesive sheet 20 having the substrate 21 and the UV-hardened resin layer 22 may be adhered to the inside of the wafer 1 1 via the UV-curable resin layer 22 After forming the cutting predetermined portion 9 produced by the field of molten processing, As shown in Figure 19B, The periphery of the adhesive sheet 20 is extended to the outside. Thereby, the germanium wafer 11 is cut into semiconductor wafers 25. In this case, Compared to the case where the adhesive sheet 20 is left to cut the wafer by the blade, The silicon wafer 11 can be cut along the cutting planned portion 9 with excellent efficiency. Further, the method of cutting the wafer 1 1 using the adhesive sheet 2 of the substrate 21 and the UV-curable resin layer 22 is used. As explained with reference to Figure 1 9 B, 'not only before stretching the adhesive sheet 20, In the case where the crack 15 starting from the predetermined portion 9 is not formed on the crucible wafer 11, As shown in Figures 20A and 20B, Also before stretching the adhesive sheet 20 (Fig. 20B), The crack 15 starting from the cutting planned portion 9 reaches the surface 3 and the inner surface 17 of the wafer π (Fig. 20A). In addition, As in 21A, Picture B, It is also possible to stretch the adhesive sheet 20 (Fig. 2B). The crack 15 starting from the cutting planned portion 9 is extended to reach the surface 3 of the silicon wafer u (Fig. 21A). Or as shown in Figures WA and 22B, Before stretching the adhesive sheet 20 (Fig. 22B), The crack 15 starting from the cutting planned portion 9 is extended to the inside 17 of the wafer 11 (Fig. 22A). Hereinafter, a second preferred embodiment of the method for cutting a semiconductor substrate according to the present invention will be described more specifically. In addition, The 2nd to 3rd 7th views are partial cross-sectional views of the ΧΙΙΙ-Χΐπ line along the sand wafer of Fig. 23. As shown in Figure 2, On the surface 3 of the wafer (semiconductor base -29-200924113 board) 1 1 as the object to be processed, Most of the functional elements 2 1 5 are patterned in a matrix along a direction parallel to the orientation flat 16 and a vertical direction. Next, the germanium wafer 1 1 is cut by each functional element 2 15 as described below. First of all, As shown in Figure 24A, The protective film 18 is adhered to the surface 3 side of the tantalum wafer 1 to cover the functional element 2 15 . This protective film 18 is used to protect the functional element 2 1 5 , At the same time, the wafer 1 is held. After pasting the protective film 18, As shown in Figure 24B, The inside of the wafer 1 1 is honed to make the twin 1 1 reach a predetermined thickness. then, Another chemical etch is applied to the inside of the 7 to smooth the inside of the 7 7 . like this, The wafer 1 1 having a thickness of about 305 μm is thinned to, for example, 1 0 0 μηα. After the silicon wafer 11 is thinned, the protective film 18 is irradiated with ultraviolet rays. With this, Hardening the adhesive layer of the protective film 18 Further, it is easy to peel off the protective film 18 from the wafer 1 1 . then, A cutting starting point region is formed inside the crucible wafer 1 1 using a laser processing apparatus. that is, As shown in Figure 25, On the mounting table 19 of the laser processing apparatus, The inner surface 17 of the silicon wafer 11 is lifted upward by a vacuum to secure the protective film 18. The cutting planned line 5 is set in a lattice shape to the adjacent functional elements 2 1 5 , Extend between 2 1 5 (refer to the dotted line at 2 o'clock in Figure 2). also, As shown in Figure 25B, The inside 17 is used as a laser light incident surface to illuminate the laser beam L' under the condition that the above-mentioned multiphoton absorption is generated in the inside of the germanium wafer 1 1 to cause the light collecting point to move. The predetermined line 5 moves relatively. With this, As shown in Figure 2 5 C, The cut-off starting point area 9 is formed by the molten processing area 13 along the line to cut 5 inside the crucible wafer 1 1 . Then, the germanium wafer 11 having the adhesive protective film 18 is taken out from the mounting table 19, -30- 200924113 As shown in Figure 26A, On the inside 17 of the wafer 11, Adhesive film 220 coated with a double-sided adhesive resin (for example, "LE-5〇〇〇 (trade name)") of Lindeku Company of Japan. The film 220 coated with the double-sided adhesive resin has a thickness of about 100 μηι, Stretchable film (holding member) 221, The UV-curable resin layer having a thickness of about μm on the stretched film 221 has a double-sided adhesive resin layer 223 as an adhesive for double-sided bonding. That is, the double-sided adhesive resin layer 223 is interposed and the stretched film 221 is adhered to the inner surface 17 of the tantalum wafer 11. In addition, A film stretching device 30 is provided on a peripheral portion of the stretched film 221 . After the film 220 coated with the double-sided adhesive resin is applied, As shown in Figure 26, Self-tapping wafer 1 1 surface 3 side peeling protective film 18 , As shown in Figure 2 6 C, The stretch film 22 1 is irradiated with ultraviolet rays. With this, Make the system stretch film 22! The UV-hardened resin layer of the adhesive layer is hardened, Further, the self-stretching film 221 is easily peeled off the double-sided adhesive resin layer 2 2 3 . then, As shown in Figure 27, The stretch film 2 2 1 is stretched by the sheet stretching device 30 to stretch the peripheral portion of the stretch film 2 2 1 toward the outside. By stretching the stretched film 22 1 , Cracks are generated in the thickness direction starting from the cutting start point field 9'. This crack finally reaches the surface 3 and the inner surface 17 of the sand wafer 11. With this, The twin crystal 11' can be cut with good precision along the line to cut 5 to obtain a plurality of semiconductor wafers 25 each having one functional element 215. also, At this time, Adjacent semiconductor wafer 25, 25 pairs of cuts, section 25a, The 25a is gradually separated from the adhered state as the stretched film 221 is stretched, and the double-sided adhesive resin layer 223 which is in close contact with the inside of the sand wafer 1 1 while cutting the sand wafer 1 1 is also cut along the cut surface. The broken line 5 is cut off by -31 - 200924113. then, As shown in Figure 27B, The semiconductor wafers 25 are picked up one by one using a suction collet. At this time, The double-sided adhesive resin layer 223 is cut into the same shape as the semiconductor wafer 25, In addition, The adhesion between the double-sided adhesive resin layer 223 and the stretch film 221 is lowered, The inside of the semiconductor wafer 25 is picked up in a state in which it is in close contact with the cut double-sided adhesive resin layer 223. also, As shown in Figure 27C, The semiconductor wafer 25 is placed on the die pad of the lead frame 27 by being adhered to the double-sided adhesive resin layer 223 inside. Then, the material is joined by heating. The method of cutting the wafer 1 1 as described above, The wafer wafer 形成 having the functional element 2 1 5 formed on the surface 3 is used as a processing object. Use 1 7 inside as the incident surface of the laser light. The collected light spot p is irradiated with laser light inside the germanium wafer 11. With this, Multiphoton absorption inside the germanium wafer 1 1 Further, the breakage starting area 9 generated by the molten processing field 13 is formed inside the crucible wafer 1 1 along the line to cut 5'. At this time, The reason why the inside of the semiconductor substrate is used as the incident surface of the laser light is that when the surface is used as the incident surface of the laser light, the functional element hinders the entrance of the laser light. In this way, when the cutting start point field 9 is formed inside the crucible wafer, it is possible to naturally or apply a small force to cause cracking from the starting point field 9 as a starting point. The crack can be extended to reach the surface 3 and the inside of the wafer 1 1 . therefore, After the cutting start point field 9 is formed, the double-sided adhesive resin layer 2 2 3 is interposed therebetween, and the stretch film 221 is adhered to the inside 17 of the sand wafer 11, then, After the stretched film 2 2 1 is stretched, the cut surface 25a of the wafer 1 1 cut along the line to cut 5 is cut, 25a is gradually separated from the state of the self-tightening -32-200924113 as the stretched film 221 is stretched. With this, The double-sided adhesive resin layer 223 existing between the crucible wafer 11 and the stretched film 22 1 is also cut along the line to cut 5 . then, Compared to the case of cutting with a blade, Can be excellent, The tantalum wafer 11 and the double-sided adhesive resin layer 223 are cut along the line to cut 5 . and, The cut surface 25a of the wafer 1 1 cut along the line to cut 5, In the early stage of 25 a, they were closely connected to each other. Therefore, each of the cut wafers 1 1 and the cut double-sided adhesive resin layer 223 are almost identical in shape. therefore, It is also possible to prevent the double-sided bonding resin from being extruded from the cut surface 25a of each of the wafers 11. Furthermore, Before the cutting starting point field 9 is formed inside the crucible wafer 1 1 , the inside of the wafer 1 1 has a predetermined thickness. like this, By thinning the wafer 1 1 into a predetermined thickness, The tantalum wafer 11 and the double-sided adhesive resin layer 223 can be cut along the line to cut 5 with better precision. (industrial use possibility) As explained above, A method of cutting a semiconductor substrate according to the present invention, The semiconductor substrate and the double-sided adhesive resin layer can be simultaneously cut at a good efficiency. (5) Simple description of the schema: Fig. 1 is a plan view showing a semiconductor substrate in laser processing performed by the laser processing method according to the embodiment. Fig. 2 is a cross-sectional view of the Π-Π line of the semiconductor substrate shown in Fig. 1. Fig. 3 is a plan view showing a semiconductor substrate after laser processing performed by the laser processing method according to the embodiment. Fig. 4 is a sectional view taken along the line 1V_IV of the semiconductor substrate shown in Fig. 3 - 33 - 200924113. Fig. 5 is a cross-sectional view taken along the line V-V of the semiconductor substrate shown in Fig. 3. Fig. 6 is a plan view of the semiconductor substrate cut by the laser processing method according to the embodiment. Fig. 7 is a view showing a photograph of a section of a portion of the wafer which is cut by the laser processing method according to the embodiment. Fig. 8 is a graph showing the relationship between the wavelength of the laser light and the transmittance of the inside of the ruthenium substrate in the laser processing method according to the embodiment. Fig. 9 is a schematic view showing a configuration of a laser processing apparatus according to the present embodiment. Fig. 10 is a flowchart for explaining a procedure of forming a cutting predetermined portion executed by the laser processing apparatus according to the embodiment. The 1st 1A and 1 1B drawings are schematic diagrams for explaining the method of cutting the tantalum wafer according to the embodiment. Figure 11A shows the state after the adhesive sheet is attached to the wafer. Fig. πB is a view showing a state in which a predetermined portion to be cut by the field of molten processing is formed inside the germanium wafer. 12A and 12B are schematic views for explaining a method of cutting a silicon wafer according to the embodiment. Figure 12A shows the state after the adhesive sheet is stretched. The 1st 2B is a state in which the adhesive sheet is irradiated with ultraviolet rays. Figs. 1 3 A and 1 3 B are diagrams for explaining a method of cutting a silicon wafer according to the present embodiment. The 13A is a state in which the cut double-sided adhesive resin layer and the semiconductor wafer are simultaneously picked up. The first 3B pattern is a state in which the semiconductor wafer is bonded to the lead frame via a double-sided adhesive resin layer. -34- 200924113 FIGS. 14A and 14B are schematic diagrams showing the relationship between the wafer and the predetermined portion to be cut in the method of cutting the wafer according to the embodiment. FIG. 14A shows that the pattern is not generated. The state in which the cutting portion is the starting point of the crack is shown in Fig. 14B. The state in which the crack originating from the cutting predetermined portion reaches the surface and the inside of the crucible wafer is shown. Figs. 1 5 A and 1 5 B are schematic diagrams showing the relationship between the wafer and the cutting planned portion in the method of cutting the wafer according to the embodiment. Wherein the 15A is a state in which the crack originating from the cutting predetermined portion reaches the surface of the silicon wafer, Fig. 15B shows a state in which the crack originating from the cutting predetermined portion reaches the inside of the wafer. Figs. 1A and 6B are diagrams for explaining an embodiment of a method of cutting a silicon wafer according to the present embodiment. Fig. 16A shows the state immediately after the adhesive sheet starts to stretch, Fig. 16B shows the state in which the adhesive sheet is stretched. 1A and 7B are schematic diagrams for explaining an embodiment of a method of cutting a silicon wafer according to the present embodiment. Figure 17A shows the state after the adhesive sheet has been stretched. Fig. 17B shows the state when the semiconductor wafer is picked up. Fig. 18 is a schematic view for explaining another embodiment of the cutting method of the tantalum wafer according to the embodiment. Figs. 19A and 19B are diagrams for explaining another embodiment of the method for cutting a tantalum wafer according to the embodiment. There is no occurrence of a crack in which the predetermined portion is cut as a starting point, The 1st 9th figure shows the state after the predetermined portion is cut by the molten processing field. Fig. 19B is a view showing a state in which the adhesive sheet is stretched - 35 - 200924113. Figs. 20A and 20B are diagrams for explaining another embodiment of the method for cutting the wafer according to the embodiment, starting from the cutting of the predetermined portion. The crack reaches the surface and inside of the wafer, Wherein the figure 20A shows the state after the cutting of the predetermined portion is formed by the field of the molten processing, Fig. 20B shows the state after the adhesive sheet is stretched. 21A and 21B are views for explaining another embodiment of the method for cutting a tantalum wafer according to the present embodiment, in which the crack originating from the predetermined portion is reached and the surface of the wafer is reached. The second 1 A diagram shows the state after the predetermined portion is cut by the field of the molten processing. Fig. 21B shows the state after the adhesive sheet is stretched. Figs. 22A and 22B are views for explaining another embodiment of the method for cutting a tantalum wafer according to the embodiment, in which the crack originating from the predetermined portion is cut into the inside of the wafer. Wherein the 22A is a state in which the predetermined portion is cut by the molten processing field, Fig. 22B shows the state after the adhesive sheet is stretched. Fig. 23 is a view showing a method of cutting a semiconductor substrate of the embodiment; A plan view of the wafer as the object to be processed. Figs. 24A to 24C are views for explaining a method of cutting a semiconductor substrate of the present embodiment. Fig. 24A is a view showing a state in which a protective film is adhered to a germanium wafer. The 2nd 4th B diagram shows the state in which the germanium wafer is thinned, The 24 C chart shows a state in which the protective film is irradiated with ultraviolet rays. 25A to 25C are schematic views for explaining a method of cutting a semiconductor substrate of the embodiment. Figure 25A shows the state in which the germanium wafer and the protective film -36- 200924113 are fixed on the mounting table. Figure 25B shows the state in which the germanium wafer is irradiated with laser light. Fig. 25C shows the state in which the inside of the crucible wafer forms the area of the cutting start point. Figs. 26A to 26C are views for explaining a cutting method of the semiconductor substrate of the embodiment. Fig. 26A shows a state in which a film coated with a double-sided adhesive resin is adhered to a germanium wafer, Figure 26B shows the state of peeling off the protective film from the wafer. Fig. 26C is a view showing a state in which the stretched film is irradiated with ultraviolet rays. 27A-27C is a schematic view for explaining a method of cutting a semiconductor substrate of the embodiment. Wherein the 27C is a state in which the stretched film is stretched, Fig. 27B is a view showing a state in which the cut double-sided adhesive resin layer and the semiconductor wafer are simultaneously picked up, Fig. 27C shows a state in which the semiconductor wafer is bonded to the lead frame via the double-sided adhesive resin layer. The main part of the symbol description: 1 Semiconductor substrate 3 Surface 5 Cutting planned line 7 Modification field 9 Cutting planned portion 11 矽 Wafer 13 Melting processing field 17 矽 Inside of wafer 18 Protective film 20 Adhesive sheet - 37- 200924113 2 1 Substrate 22 UV hardening Resin layer 23 double-sided adhesive resin layer 25 semiconductor wafer 25a cut surface of semiconductor wafer 30 sheet stretching apparatus 100 laser processing apparatus 10 1 laser light source 102 laser light source control section 103 dichroic mirror 105 light collecting lens 107 mounting table 109 X-axis stage 111 γ-axis stage 113 Z-axis stage 115 stage control unit 119 Beam splitter 121 Photographic element 12 3 Image lens 125 Photographic data processing unit 127 Overall control unit 129 Monitor 215 Function element-38-