TW200416954A - Semi-conductor cutting method - Google Patents

Semi-conductor cutting method Download PDF

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Publication number
TW200416954A
TW200416954A TW092125000A TW92125000A TW200416954A TW 200416954 A TW200416954 A TW 200416954A TW 092125000 A TW092125000 A TW 092125000A TW 92125000 A TW92125000 A TW 92125000A TW 200416954 A TW200416954 A TW 200416954A
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Taiwan
Prior art keywords
semiconductor substrate
cutting
cut
resin layer
double
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TW092125000A
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Chinese (zh)
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TWI339876B (en
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Fumitsugu Fukuyo
Kenshi Fukumitsu
Naoki Uchiyama
Ryuji Sugiura
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Hamamatsu Photonics Kk
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Publication of TWI339876B publication Critical patent/TWI339876B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Die Bonding (AREA)

Abstract

To expand the adhesive sheet 20 which is adhered to a silicone wafer 11 after an intended cutting region 9 is formed by means of the fusion treatment region 13 that is generated within the silicone wafer 11 by means of the multi-photon absorption. The silicone water 11 can be cut into semi-conductor chips 25 with an excellent accuracy, along the intended cutting region 9. Meanwhile, the opposite cutting faces 25a, 25a of the neighbouring semi-conductors 25, 25 become apart from the intimate state, thereby a di-bond resin layer 23 is also cut along the intended cutting region 9. By way of this, the silicone wafer 11 and the di-bond resin layer 23 can be cut with excellent efficiency as compared to the case that the silicone wafer 11 and the di-bond resin layer 23, but apart from the bottom material 21, are cut with the blade.

Description

200416954 玖、發明說明： (一） 發明所屬之技術領域： 本發明係關於在半導體裝置之製造作業上等用於切斷半 導體基板之半導體基板之切斷方法。 (二） 先前技術： 以往，這種技術，在日本特開第2002- 1 5 82 7 6號公報和 特開第2 000- 1 04040號公報上記載有如下之技術。首先， 將黏著片經雙面黏結樹脂層黏貼於半導體晶圓之裏面，然 後在半導體晶圓被把持於黏著片上之狀態下用刀片切斷半 ® 導體晶圓以得出半導體晶片。又，當拾取黏著片上之半導 體晶片之際將雙面黏結樹脂與各個之半導體晶片一起自黏 著片剝離。藉此，能省掉在半導體晶片之裏面塗佈接著劑 等之作業，能將半導體晶片接著於引線框（lead frame)上。 不過，上述之技術，在用刀片切斷被把持於黏著片上之 半導體晶圓之際只有不切斷黏著片，但要確實地切斷存在 於半導體晶圓和黏著片之間之雙面黏結樹脂層。因此，這 鲁 種情形用刀片切斷半導體晶圓，須要特別慎重。 (三） 發明內容： 因此，本發明係鑑於這種情事而創作出者，其目的係提 供一種能以良好效率將半導體基板與雙面黏結樹脂層一起 切斷之半導體基板之切斷方法。 爲了達成上述目的，本發明有關之半導體基板之切斷方 法其特徵係包括下述作業：形成作業，在經雙面黏結樹脂 **6- 200416954 層而被黏貼薄片之半導體基板之內部、對合集光點、照射 雷射光，藉此’在半導體基板內部形成因多光子吸收所產 生之改質領域’藉該改質領域形成切斷預定部；及切斷作 業，在形成切斷預定部後藉伸展薄片，沿著切斷預定部切 斷半導體基板及雙面黏結樹脂層。 此半導體基板之切斷方法係在半導體基板之內部對合集 光點照射雷射光，使在半導體基板內部產生多光子吸收現 象以形成改質領域，因此，能沿著切斷半導體基板所需之 切斷預定線在半導體基板之內部能形成切斷預定部。這樣 子，在半導體基板內部形成切斷預定部後，能用較小之力 ，以切斷預定部爲起點，在半導體基板之厚度方向產生龜 裂。因此之故，伸展黏貼在半導體基板上之薄片後能沿著 切斷預定部以良好精確度切斷半導體基板。這時，被切斷 之半導體基板成對向之切斷面初期係處在密接狀態，隨著 薄片之伸展而分開，因此，也沿著切斷預定部切斷存在於 半導體基板和薄片之間之雙面黏結樹脂層。因此，相較於 保留薄片，用刀片切斷半導體基板及雙面黏結樹脂層之情 形，能以極佳之效率沿著切斷預定部切斷半導體基板及雙 面黏結樹脂層。而且，被切斷之半導體基板成對向之切斷 面因初期係相互密接在一起，故被切斷之各個之半導體基 板和被切斷之各個之雙面黏結樹脂層約呈相同之外形，能 防止雙面黏結樹脂自各半導體基板之切斷面被擠出。 另外’本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 200416954 片* β半導體基板的內部對合集光點，以集光點上之尖峰功 率密度爲lxl〇8(W/cm2)以上且脈衝寬爲1μ3以下之條件照 射S射光，藉此，在半導體基板內部形成含有熔融處理領 域t改質領域，藉含有該熔融處理領域之改質領域形成切 斷預定部，及切斷作業，在形成切斷預定部後藉伸展薄片 ί卑 '沿著切斷預定部切斷半導體基板雙面黏結樹脂層。 此半導體基板之切斷方法，在形成切斷預定部之作業上 ’係對合半導體基板之內部，以集光點上之尖峰功率密度 爲lxl〇8(W/cm2)以上且脈衝寬爲1μ3以下之條件照射雷射 鲁 光。故，半導體基板之內部藉多光子吸收而被局部加熱。 藉此加熱而在半導體基板內部形成熔融處理領域。此熔融 處理領域因係爲上述之改質領域之一例，故此半導體基板 之切斷方法，相較於保留薄片而用刀片切斷半導體基板及 雙面黏結樹脂層之情形，能以極佳之效率沿著切斷預定部 切斷半導體基板及雙面黏結樹脂層。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業··形成作業，在經雙面黏結樹脂層而黏貼薄 ® 片之半導體基板之內部，對合集光點照射雷射光，藉此， 在半導體基板內部形成改質領域，以該改質領域形成切斷 預定部；及切斷作業，在形成切斷預定部後藉伸展薄片而 沿著切斷預定部切斷半導體基板及雙面黏結樹脂層。又， 此改質領域也有爲經熔融處理後之領域之情形° 依此半導體基板之切斷方法，也與上述之半導體基板之 切斷方法相同之理由，相較於保留薄片而用刀片切斷半導 -8- 200416954 體基板及雙面黏結樹脂層之情形，能以極佳之效率沿著切 斷預定部切斷半導體基板及雙面黏結樹脂層。但是，改質 領域有藉多光子吸收而形成之情形，也有藉其它原因而形 成之情形。 另外’本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業··形成作業，在被黏貼薄片之半導體基板之 內部對合集光點照射雷射光，藉此，在半導體基板之內部 形成改質領域，並藉該改質領域形成切斷預定部；及切斷 作業’在形成該切斷預定部後藉伸展薄片而沿著切斷預定鲁 部切斷半導體基板。 依此半導體基板之切斷方法，相較於保留薄片而用刀片 切斷半導體基板之情形，能以極佳之效率沿著切斷預定部 切斷半導體基板。 另外’於上述之本發明有關之半導體基板之切斷方法上 ’切斷預定部之形成作業或可以切斷預定部爲起點使龜裂 到達半導體基板之雷射光入射側之表面，或可以切斷預定 部爲起點使龜裂到達與半導體之雷射光入射側相反之側之馨 裏面’或可以切斷預定部爲起點，使龜裂到達半導體基板 之雷射光入射側之表面和與其相反之側之裏面。 另外’本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層黏貼薄片 之半導體基板之內部對合集光點照射雷射光，藉此，在半 導體基板內部形成因多光子吸收所產生之改質領域，並以 該改質領域形成切斷預定部；切斷作業，在形成切斷預定 -9- 200416954 部之作業後’沿著切斷預定部使半導體基板產生應力，藉 此沿著切斷預定部切斷半導體基板；及切斷作業，在切斷 半導體基板後藉伸展薄片而沿著半導體基板之切斷面切斷 雙面黏結樹脂層。 此半導體基板之切斷方法也藉多光子吸收形成改質領域 ’並能藉此改質領域沿著切斷半導體基板所需之切斷預定 線在半導體基板之內部形成切斷預定部。是以，沿著切斷 預定部使半導體基板產生應力時能以良好精確度沿著切斷 預定部切斷半導體基板。又，伸展黏貼於半導體基板上之鲁 薄片時被切斷之半導體基板成對向之切斷面係從相互密接 之狀態，隨著薄片之伸展而分離，進而存在於半導體基板 和薄片之間之雙面黏結樹脂層逐沿著半導體基板之切斷面 被切斷。因此，相較於保留薄片而用刀片切斷半導體基板 及雙面黏結樹脂層之情形，能以極佳之效率沿著切斷預定 部切斷半導體基板及雙面黏結樹脂層。而且，被切斷之半 導體基板成對向之切斷面初期因係相互密接在一起，故切 斷後之各個半導體基板和切斷後之各個之雙面黏結樹脂層 ® 之外形約略相同，能防止雙面黏結樹脂自各個半導體基板 之切斷面被擠出。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 片之半導體基板之內部對合集光點，以集光點之尖峰功率 密度爲lxl08(W/cm2)以上且脈衝寬爲1μδ以下之條件照射 雷射光’藉此，在半導體基板內部形成含有熔融處理領域 -10- 200416954 之改質領域，並藉含有該熔融處理領域之改質領域形成切 斷預定部；切斷作業，在形成切斷預定部後使沿著切斷預 定部在半導體基板上產生應力，藉此，沿著切斷預定部切 斷半導體基板；及切斷作業，在切斷半導體基板後，藉伸 展薄片而沿著半導體基板之切斷面切斷雙面黏結樹脂層。 另外，本發明有關之半導體基板之切斷方法，其特徵爲 包括下述作業：形成作業，在經雙面黏結樹脂層而黏貼薄 片之半導體基板之內部對合集光點照射雷射光，藉此在半 導體基板內部形成改質領域，並以該改質領域形成切斷預 修 定部；切斷作業，在形成切斷預定部後沿著切斷預定部使 半導體基板產生應力，藉此，沿著切斷預定部切斷半導體 基板；及切斷作業，在切斷半導體基板後藉伸展薄片而沿 著半導體基板之切斷面切斷雙面黏結樹脂層。又，此改質 領域也有係爲熔融處理後之領域。 依it些半導體基板之切斷方法，也是因與上述之半導體 基板之切斷方法相同之理由，相較於保留薄片而用刀片切 斷半導體基板及雙面黏結樹脂層之情形，能以極佳之效率 鲁 沿著切斷預定部切斷半導體基板及雙面黏結樹脂層。 爲達成上述目的’本發明有關之半導體基板之切斷方法 ’其係一種沿著切斷預定線切斷表面上有形成功能元件之 半導體基板之半導體基板之切斷方法’其特徵爲包括下述 作業：形成作業，將半導體基板之裏面作爲雷射光之入射 面’在半導體基板之內部對合集光點照射雷射光藉以形成 改質領域，藉此改質領域沿著切斷預定線距雷射光入射 -11- 200416954 面既定距離內側形成切斷起點領域；裝著作業，在形成切 斷起點領域後經雙面黏結樹脂層在半導體基板之裏面裝著 能伸展之把持構件；及切斷作業，在裝著保持構件後使把 持構件伸展’藉此，沿著切斷預定線切斷半導體基板及雙 面黏結樹脂層。 此半導體基板之切斷方法係以表面形成有功能元件之半 導體基板爲加工對象物。又，將這樣之半導體基板之裏面 作爲雷射光入射面，在半導體基板之內部對合集光點並照 射雷射光，藉此，例如產生多光子吸收或與其同等之光吸鲁 收，進而沿著切斷預定線在半導體基板之內部形成因改質 領域所產生之切斷起點領域。這時，將半導體基板之裏面 作爲雷射光之入射面之理由係若將表面作爲雷射光入射面 時，則功能元件會有妨礙雷射光之入射之虞。這樣子，在 半導體基板之內部形成切斷起點領域時，則自然地或藉施 加較小之力，能以切斷起點領域爲起點使產生龜裂，此龜 裂並能到達半導體基板之表面和裏面。因此，在形成切斷 起點領域後經雙面黏結樹脂層在半導體基板之裏面裝著能鲁 伸展之把持構件，使此把持構件伸展時，沿著切斷預定線 切斷之半導體基板之切斷面則隨著把持構件之伸展從密接 之狀態分離。藉此，沿著切斷預定線切斷存在於半導體基 板和把持構件之間之雙面黏結樹脂層。於是，相較於用刀 片切斷之情形能以極佳之效率沿著切斷預定線切斷半導體 基板及雙面黏結樹脂層。而且，沿著切斷預定線被切斷之 半導體基板之切斷面最初因係相互密接在一起，故被切斷 -12- 200416954 之各個半導體基板和被切斷之各個雙面黏結樹脂層之外形 約略相同’進而防止雙面黏結樹脂自各個半導體基板之切 斷面被擠出。 這裡’所謂功能元件係意指，例如，藉晶體成長而形成 之半導體動作層、光二極體等之受光元件、雷射二極體等 之發光元件、作爲電路而形成之電路元件等。 另外’具備在形成切斷起點領域之前，硏磨半導體基板 之裏面俾使半導體基板之厚度達到既定之厚度之作業爲較 佳者。這樣子，藉事先硏磨裏面使半導體基板達到既定之 ® 厚度，從而，沿著切斷預定線，能更精確地切斷半導體基 板及雙面黏結樹脂層。另外，所謂硏磨係意指切削、硏削 、化學蝕刻等。 另外，改質領域包含熔融處理領域之情形。如加工對象 物若係爲半導體基板，則藉雷射光之照射形成熔融處理領 域之情形。此熔融處理領域因係上述之改質領域之一例， 故這種情形也能容易切斷半導體基板，能以良好效率沿著 切斷預定線切斷半導體基板及雙面黏結樹脂層。 ® 另外，上述之本發明有關之半導體基板之切斷方法，在 形成切斷起點領域之際、或可以切斷起點領域爲起點使龜 裂到達半導體基板之表面、或可以切斷起點領域爲起點使 龜裂到達半導體基板之裏面、或可以切斷起點領域爲起點 使龜裂到達半導體基板之表面和裏面。 (四）實施方式： (實施發明之最佳形態） -13- 200416954 以下將參照圖面詳細說明本發明有關之半導體基板之切 斷方法之良好實施形態。 本實施形態有關之半導體基板之切斷方法，係在半導體 基板之內部對合集光點照射雷射光，藉此，在半導體基板 內部形成藉多光子吸收所產生之改質領域，並藉此改質領 域形成切斷預定部。因此，在說明本實施形態有關之半導 體基板之切斷方法之前，將以多光子吸收爲中心說明爲了 形成切斷預定部所實施之雷射加工方法。 光子之能量hi)若小於材料之吸收帶間隙（band gap)EG時則 鲁 在光學上係呈透明。於是，被材料吸收之條件係爲hi)>E0。 但是，即便光學上係透明，若使雷射光之強度作成非常大 而成nhi)>EG之條件（n = 2、3、4、…）時材料會產生吸收。 此現象即稱爲多光子吸收。若是脈衝波之情形時雷射光之 強度係由雷射光之集光點之尖峰功率密度爲（W/cm2)決定 ，例如尖峰功率密度爲lxl08(W/cm2)以上之條件會產生多 光子吸收。尖峰功率密度係由（集光點上之雷射光之每個脈 衝之能量）+ (雷射光之束點（beam spot)斷面積X脈衝寬）求出 鲁 。另外，若是連續波之情形，雷射光之強度則是由雷射光 之集光點之電場強度（W/cm2)決定。 下面將參照第1〜6圖說明利用這樣之多光子吸收之本 實施形態有關之雷射加工原理。第1圖係雷射加工中之半 導體基板1之平面圖，第2圖係沿著第1圖所示之半導體 基板1之Π-II線之斷面圖，第3圖係雷射加工後之半導體 基板1之平面圖，第4圖係沿著第3圖所示之半導體基板 -14- 200416954 1之IV-IV線之斷面圖，第5圖係沿著第3圖所示之半導體 基扳1之V-V線之斷面圖，第6圖係切斷後之半導體基板 1之平面圖。 如第1及2圖所示，在半導體基板1之表面3上有切斷 半導體基板1所需之切斷預定線5。切斷預定線5係直線 狀延伸之假想線（也可在半導體基板1上實際畫線以作爲切 斷預定線5 )。本實施形態有關之雷射加工係以產生多光子 吸收之條件，在半導體基板1之內部對合集光點P對半導 體基板1照射雷射光以形成改質領域。另外，集光點係雷 ® 射光L集光之地點。 藉沿著切斷預定線5 (亦即沿著箭頭A之方向）相對地移 動雷射光，使集光點P沿著切斷預定線5移動。藉此如第 3 - 5圖所示，沿著切斷預定線5僅在半導體基板1之內部形 成改質領域7，以此改質領域7形成切斷預定部9。本實施 形態有關之雷射加工方法並非藉半導體基板1吸收雷射光 L使半導體基板1發熱而形成改質領域。而是使雷射光L 穿透半導體基板1，在半導體基板1內部產生多光子吸收 * ，進而形成改質領域7。於是，半導體基板1之表面3幾 乎不吸收雷射光，因此，半導體基板1之表面3不會熔融。 在切斷半導體基板1上，若要切斷之地點有起點，則半 導體基板1則自該起點產生龜裂，因此，如第6圖所示， 能以較小之力切斷半導體基板1。於是，在半導體基板1之 表面3不會產生不必要之龜裂而能切斷半導體基板1。 另外，在以切斷預定部爲起點之半導體基板之切斷，有 -15- 200416954 下述之兩種想法。一種係在切斷預定部形成後藉對半導體 基板1施加人爲之力，以切斷預定部爲起點，半導體基板 產生龜裂，進而切斷之情形。這種情形係例如半導體基板 之厚度大之情形。所謂施加人爲之力係指例如，沿著半導 體基板之切斷預定部對半導體基板施加彎曲應力，和剪斷 應力’或者對半導體基板賦與溫度差使產生熱應力。另外 一種係藉形成切斷預定部，以切斷預定部爲起點朝半導體 基板之斷面方向（厚度方向）自然地龜裂，終至切斷半導體 基板之情形。這是，例如，若半導體基板之厚度小之情形 0 則能藉1列之改質領域形成切斷預定部，若半導體基板之 厚度大則能藉在厚度方向上形成多列之改質領域而形成切 斷預定部。另外，此自然龜裂之情形也是，在切斷地點不 會在對應未形成切斷預定部之部份上搶先產生到表面止之 分裂而能僅切斷對應形成切斷預定部之部份，因此，能良 好地控制切斷。近年來，矽晶圓等之半導體基板之厚度朝 向薄化，因此這種控制性矽之切斷方法係很有效。 且說，本實施形態上藉多光子吸收而形成之改質領域， ® 下文說明之熔融處理領域。 在半導體基板內部對合集光點，以集光點上之電場強度 爲1x10 (W/cm2)以上且脈衝寬爲lps以下之條件照射雷射 光。藉此，半導體基板之內部藉多光子吸收而被局部加熱 。藉此加熱在半導體基板內部形成熔融處理領域。所謂熔 融處理領域係指短暫熔融後再固化之領域，真正爲熔融狀 態之領域，自熔融狀態再行固化之狀態之領域，也可說是 -16- 200416954 相變化之領域，晶體結構產生變化之領域。另外，所謂熔 融處理領域也能係指在卓晶體纟p構、非晶質結構、多曰曰體 結構上從某種結構變化到別的結構之領域。亦即，例如’ 從單晶體結構變化到非晶質結構之領域，自單體結構變化 到多晶體結構之領域’自單晶體結構變化到包含非晶質結 構及多晶體結構之結構之領域。半導體基板若是矽單晶體 結構之情形時熔融處理領域則係爲例如非晶質矽之結構。 電場強度之上限値係爲例如1 χ 1 0 12 ( w / c m2)。脈衝寬，例如 ，Ins 〜200ns 爲佳。 _ 本發明者係藉實驗確認在矽晶圓之內部形成熔融處理領 域。實驗條件係如下述。 (A)半導體基板：矽晶圓（厚度爲350μηι，外徑爲4英吋） (Β)雷射 光源：半導體雷射激發Nd : YAG雷射 波長：1 〇 6 4 n m 雷射光點斷面積：3.14xl(T8cm2 振動形態：Q切換脈衝 · 循環頻率：1 00kHz 脈衝寬：30ns 輸出：20μ>!/脈衝 雷射光品質：ΤΕΜ00 偏光特性：直線偏光 (C)集光用透鏡 倍率：5 0倍 -17- 200416954 N.A. ： 0.55 對雷射光波長之透射率：6 0 % (D)載置半導體基板之載置台之移動速度：100 mm 第7圖係爲表示以上述條件藉雷射加工被切斷之矽晶圓 之一部份之斷面之照片。矽晶圓1 1之內部形成熔融處理領 域1 3。另外，藉上述條件形成之熔融處理領域1 3之厚度 方向之大小係爲1 〇 〇 μιη程度。 下文將說明藉多光子吸收形成熔融處理領域1 3。第8圖 係爲示出雷射光之波長與矽基板內部之透射率之關係之曲 · 線圖。但是，去除矽基板之表面側和裏面側各個之反射成 份僅示出內部之透射率。關於矽基板之厚度t爲5 0 μηι、 ΙΟΟμηι、200μηι、500μηι、ΙΟΟΟμιη 之上述關係。 例如，關於Nd : YAG雷射之波長爲1 0 64nm，矽基板之 厚度爲5 00μιη以下之情形時從圖上可知有80%以上之雷射 光穿透矽基板之內部。第7圖所示之矽晶圓1 1之厚度因係 W 〇 μιη，故多光子吸收所產生之熔融處理領域1 3係形成在 矽晶圓之中心附近，亦即距表面1 7 5 μηι之部份。這種情形 ® 之透射率，若參考厚度爲2 ΟΟμπι之矽晶圓之情形，則是90% 以上，故被矽晶圓1 1之內部吸收之雷射光很少，幾乎全部 透射。此情事意指在矽晶圓1 1之內部並非吸收雷射光而在 矽晶圓1 1之內部形成熔融處理領域1 3 (亦即不是藉利用雷 射光之通常之加熱而形成熔融處理領域），熔融處理領域1 3 係藉多光子吸收而形成者。利用多光子吸收形成熔融處理 領域係例如，記載於日本熔接學會全國大會演講槪要第6 6 -18- 200416954 集（2000年4月），第72頁〜第73頁之「藉微微（pi c 〇)(1 Ο·12) 秒脈衝雷射所執行之矽晶圓之加工特性評估」一文上。 另外，矽晶圓係以藉熔融處理領域所形成之切斷預定部 爲起點朝斷面方向產生龜裂，藉此龜裂到達矽晶圓之表面 和裏面終至被切斷。到達矽晶圓之表面和裏面之龜裂也有 是自然成長之情形，也有是藉對矽晶圓施力而成長之情形 。另外，自切斷預定部到矽晶圓之表面和裏面自然地成長 龜裂之情形，可有從形成切斷預定部之熔融處理領域係爲 熔融狀態開始龜裂之情形，也有在形成切斷預定部之熔融 鲁 處理領域從熔融狀態再固化之際產生龜裂之情形。但是， 任一種情形，熔融處理領域皆只形成在矽晶圓內部，在切 斷後之切斷面上，如第7圖所示，熔融處理領域僅形成在 內部。在半導體基板之內部藉熔融處理領域形成切斷預定 部後則在切斷時，因爲不易產生偏離切斷預定線之不必要 之龜裂，因此容易控制切斷。 另外，考慮半導體基板之晶體結構和其劈開性等，若如 下述那樣形成切斷起點領域的話，則能以該切斷起點領域 ® 爲起點，以更小之力，且良好精確度，切斷半導體基板。 亦即，若是由矽等之鑽石結構單晶體半導體作成之基板 之情形，最好是沿著（1 1 1)面（第1劈開面）-> (1 10)面（第2 劈開面）之方向形成切斷起點領域。另外，若是由G a A s等 閃鋅礦型結構之III-V族化合物半導體作成之基板之情形 時最好係沿著（1 1 0)面之方向形成切斷起點領域。 另外，若沿著形成上述之切斷起點領域所需之方向（例如 -19- 200416954 ，沿著單晶體矽基板上之（1 1 1)面之方向），或者沿著與形成 切斷起點領域所需之方向成正交之方向在基板上形成取向 平坦時，則以該取向平坦爲基準，能容易且正確地在基板 上形成沿著形成切斷起點領域所需方向之切斷起點領域。 下面將參照第9圖說明使用於上述之雷射加工方法之雷 射加工裝置。第9圖係爲雷射加工裝置1 00之槪略構成圖。 雷射加工裝置1 00具備產生雷射光L之雷射光源1 0 1， 爲了調節雷射光L之輸出和脈衝等而控制雷射光源1 0 1之 雷射光源控制部1 02，具有反射雷射光L之功能且配置成 能將雷射光L之光軸之取向改變90°之分色鏡103，對被分 色鏡103反射之雷射光L予以集光之集光用透鏡105，載 置被經集光用透鏡1 〇 5集光後之雷射光照射之加工對象物 1之載置台107，用於將載置台107朝X軸向移動之X軸 台（stage) 109，將載置台107朝與X軸向正交之Y軸移動 之Y軸台1 1 1，用於將載置台1 0 7朝與X軸及Y軸向正交 之方向之Z軸向移動之Z軸台1 1 3，及控制此三個台1 〇 9 、1 1 1、1 1 3之移動之台控制部1 1 5。 Z軸方向因係爲與半導體基板1之表面3成正交之方向 ，故成爲入射半導體基板1之雷射光L之焦點方向。於是 ，藉將Z軸台1 1 3在Z軸方向上移動，能在半導體基板1 之內部對合雷射光L之集光點P。另外，此集光點〇在χ(γ) 軸方向之移動係藉Χ(Υ)軸台109(111)使半導體基板1在 Χ(Υ)軸方向上移動而執行。 雷射光源1 0 1係爲產生脈衝雷射光之Nd ·· YAG雷射。能 -20- 200416954 作爲雷射光源101之雷射’另外有Nd: YV〇4雷射、Nd: YLF雷射和鈦藍寶石雷射。若是形成熔融處理領域之情形 時最好使用N d ·· Y A G雷射、N d : Y V 0 4雷射、N d ·· Y L F雷 射。本實施形態，對半導體基板1之加工雖係使用脈衝雷 射光，但是只要能引起多光子吸收的話也可使用連續波雷 射光。 雷射加工裝置1 0 0另具備用於產生照明被載置於載置台 1 0 7上之半導體基板1之可視光線之觀察用光源1 1 7 ’及配 置在與分色鏡103及集光用透鏡1〇5相同光軸上之可視光 ® 用之光束分離器119。分色鏡103係配置在光束分離器119 和集光用透鏡105之間。光束分離器119具有將一半之可 視光線反射，使另外之一半透射之功能’且配置成將之可 視光線之光軸之取向改變90°。從觀察用光源117產生之可 視光線約一半被光束分離器1 1 9反射，此被反射之可視光 線穿透分色鏡1 〇 3及集光用透鏡1 0 5，而照射含有半導體 基板1之切斷預定線5等之表面3。 雷射加工裝置1 〇〇另具備光束分離器1 1 9，及配置在與 * 分色鏡103及集光用透鏡105相同之光軸上之攝影元件121 和結像透鏡1 2 3。作爲攝影元件1 2 1者有例如C C D攝影機 。照射含有切斷預定線4等之表面3之可視光線之反射光 係穿透集光用透鏡1〇5、分色鏡1〇3、光束分離器119，在 結像透鏡1 2 3上結像後被攝影元件丨2丨攝影而成爲攝影資 料。 雷射加工裝置1 〇 〇另具備輸入從攝影元件1 2 1輸出之攝 -21- 200416954 影資料之攝影資料處理部1 2 5，及控制雷射加工裝置1 〇 〇 整體之整體控制部127，及監視器129。攝影資料處理部125 係根據攝影資料，運算用於使觀察用光源1 1 7產生之可視 光之焦點對合表面3之焦點資料。接著，根據此焦點資料 ，台控制部1 1 5移動控制Ζ軸台1 1 3，藉此，使可視光之 焦點對合表面3。於是，攝影資料處理部1 2 5係作爲自動 聚焦單元而運作。另外，攝影資料處理部1 2 5係根據攝影 資料，運算表面3之擴大影像等之影像資料。此影像資料 然後被送至整體控制部1 2 7，經整體控制部執行各種處理 鲁 後送到監視器1 2 9。藉此，在監視器1 2 9上顯示擴大影像 等。 整體控制部1 2 7輸入來自台控制部1 1 5之資料，及攝影 資料處理部1 2 5之影像資料等，並根據這些資料，控制雷 射光源控制部1 02、觀察用光源1 1 7及台控制部1 1 5，藉此 ，控制整體雷射加工裝置1 0 0。於是，整體控制部1 2 7係 作爲電腦單元而運作。 下面將參照第9及1 0圖說明藉上述那樣組成之雷射加工馨 裝置1 0 0所執行之切斷預定部之形成步驟。第1 0圖係爲用 於說明雷射加工裝置1 00所執行之切斷預定部之形成步驟 之流程圖。 用未圖示之分光光度計等測定半導體基板1之光吸收特 性。根據此測定結果，選定產生對基板1係透明之波長或 者吸收少之波長之雷射光L之雷射光源1 0 1 (S 1 0 1 )。接著， 測定半導體基板1之厚度。根據厚度之測定結果及半導體 -22- 200416954 基板1之折射率，決定半導體基板1在Z軸方向之移動量 (S103)。這是爲了使雷射光L之集光點P位於半導體基板1 之內部，以位在半導體基板1之表面3之雷射光L之集光 點P爲基準而在半導體基板1之Z軸方向上之移動量。此 移動量係輸入整體控制部1 2 7。 將半導體基板1載置於雷射加工裝置100之載置台107 。又，使自觀察用光源Π 7產生可視光以照射半導體基板1 (S 1 0 5 )。含有被照明切斷預定線5之半導體基板1之表面3 被攝影元件1 2 1攝影。切斷預定線5係爲用於切斷半導體鲁 基板1所需之假想線。被攝影元件1 2 1攝影之攝影資料係 被送到攝影資料處理部1 2 5 °根據此攝影資料，攝影資料 處理部1 2 5運算觀察用光源1 1 7之可視光之焦點能位在半 導體基板1之表面3之焦點資料（S 107)。 此焦點資料係被送至台控制部1 1 5。台控制部1 1 5則根 據此焦點資料使Z軸台113在Z軸方向上移動（S1 09)。藉 此，使觀察用光源1 1 7之可視光焦點位在半導體基板1之 表面3。另外，攝影資料處理部1 2 5根據攝影資料運算含隹 有切斷預定線5之半導體基板1之表面3之擴大影像資料 。此擴大影像資料則經整體控制部1 2 7而被送至監視器1 2 9 ，藉此將切斷預定線5附近之擴大影像顯示在監視器1 2 9 整體控制部1 2 7輸入事先在步驟S 1 0 3上決定之移動量資 料，然後將此移動量資料送至台控制部1 1 5。台控制部1 1 5 則根據此移動量資料，藉Z軸台1 1 3使半導體基板朝Z軸 -23- 200416954 方向移動俾使雷射光L之集光點P之位置在半導體基板1 之內部（S 1 1 1)。 接著，自雷射光源1 01產生雷射光L，使雷射光L照射 到半導體基板1之表面3之切斷預定線5。雷射光L之集 光點P因係位在半導體基板1之內部，故熔融處理領域僅 形成在半導體基板1之內部。又，使X軸台109、Y軸台 1 Η沿著切斷預定線5移動俾藉沿著切斷預定線5形成之 熔融處理領域在半導體基板1之內部沿著切斷預定線5形 成切斷預定部（S 1 1 3 )。 鲁 藉上述步驟，完成雷射加工裝置1 (3 0所執行之切斷預定 部之步驟，而在半導體基板1之內部形成切斷預定部。在 半導體基板1之內部形成切斷預定部後即能較小之力使沿 著切斷預定部在半導體基板1之厚度方向上產生龜裂。 下面，將說明本實施形態有關之半導體基板1之切斷方 法。另外，這裡，係使用屬於半導體晶圓之矽晶圓1 1作爲 半導體基板。 首先，如第1 1 Α圖所示，在矽晶圓1 1之裏面1 7上黏貼® 著薄片2 0俾被覆矽晶圓1 1之裏面丨7。此黏著薄片2 〇具 有厚度爲100 μπι程度之底材21，於此底材21上設有層厚 數μηι程度之UV硬化樹脂層22。另外，在此UV硬化樹脂 層22上設有作爲雙面結合用接著劑之雙面黏結樹脂層23 。另外’在矽晶圓1 1之表面上成矩陣狀地形成有多個功能 元件。這裡，所謂功能元件係指光二極體等之受光元件、 雷射二極體等之發光元件、或者作爲電路而形成之電路元 -24- 200416954 件等。 接著，如第1 1 B圖所示，例如使用上述之雷射加工裝置 1 0 0，在矽晶圓1 1之內部對合集光點P自表面3側照射雷 射光，藉此，在矽晶圓Π之內部形成係爲改質領域之熔融 處理領域1 3，以此熔融處理領域1 3形成切斷預定部9。在 形成此切斷預定部9時雷射光係在成矩陣狀配置在矽晶圓 1 1之表面3上之多個功能元件之間移動照射，藉此在相鄰 功能元件間之正下方形成格子狀延伸之切斷預定部9。 形成切斷預定部9後，如第1 2 A圖所示，藉薄片伸展裝 馨 置30使黏著薄片20之周圍朝外側拉伸以使黏著薄片20伸 展。藉黏著薄片2 0之伸展，以切斷預定部9爲起點在厚度 方向上產生龜裂，此龜裂延伸到達矽晶圓1 1之表面3和裏 面1 7。藉此，矽晶圓1 1能依每個功能元件以良好之精確 度切斷，進而能得出各有1個功能元件之各個半導體晶片 25 ° 另外，這時，相鄰之半導體晶片2 5、2 5成對向之切斷面 2 5 a、2 5 a初期，係處於密接之狀態，但隨著黏著薄片2 〇鲁 之伸展而逐漸分離，因此，與切斷矽晶圓1 1之同時密接於 矽晶圓1 1之裏面1 7之雙面黏結樹脂層2 3也沿著切斷預定 部9而被切斷。 再者，薄片伸展裝置3 0有在形成切斷預定部9之時設在 載置矽晶圓Π之台上之情形，也有未設在台上之情形。若 是未設在台上之情形時則被載置於台上之矽晶圓1 1在形 成切斷預定部9後係藉移送措施被移動到設有薄片伸展裝 -25- 200416954 置30之其它之台上。 在黏著薄片2 0結束伸展後，如第1 2 B圖，從裏面側對黏 著薄片2 0照射紫外線，俾使U V硬化樹脂層2 2硬化。藉 此，降低UV硬化樹脂層22和雙面樹脂層23之密接力。 另外，紫外線之照射也可在開始伸展黏著薄片2 0之前進行。 接著，如第1 3 A圖所示，使用拾取裝置之吸著筒夾等依 序拾取半導體晶片2 5。這時’雙面黏結樹脂層2 3係被切 斷成與半導體晶片2 5相同之外形，另外，雙面黏結樹脂層 2 3和U V硬化樹脂層2 2之密接力因降低，故半導體晶片 鲁 2 5在被切斷之雙面黏結樹脂層2 3密接於半導體晶片2 5之 裏面之狀態下被拾取。又，如第1 3 B圖所示，將半導體晶 片2 5經密接於其裏面之雙面黏結樹脂層2 3而被載置於引 線框27之模墊上，接著藉加熱行塡料接合。 如上述，矽晶圓Π之切斷方法係以藉多光子吸收形成之 熔融處理領域1 3，沿著用於切斷矽晶圓1 1所需之切斷預 定線在矽晶圓Π之內部形成切斷預定部9。因此之故，在 伸展黏貼於矽晶圓1 1之黏著薄片2 0後即能沿著切斷預定 馨 部9以良好精確度切斷矽晶圓1 1，進而得出半導體晶片2 5 。這時，相鄰之半導體晶片25、25成對向之切斷面25a、 25a初期係處於密接狀態，隨著黏著薄片20之伸展而逐漸分 離，因此，連密接在矽晶圓Π之裏面1 7之雙面黏結樹脂 層2 3也沿著切斷預定部9被切斷。因此，相較於不切斷底 材2 1而切斷矽晶圓1 1及雙面黏結樹脂層23之情形，能以 極佳效率沿著切斷預定部9切斷矽晶圓1 1及雙面黏結樹脂 -26- 200416954 層23。 而且，相鄰之半導體晶片2 5、2 5成對向之切斷面2 5 a、 25a初期因係相互接，故切斷之各個半導體晶片25與切斷 之各個雙面黏結樹脂層2 3之外形約略相同，進而也能防止 雙面黏結樹脂自各半導體晶片2 5之切斷面2 5 a、2 5 a被擠 出。 以上之矽晶圓1 1之切斷方法，如第1 4 A圖所示，一直到 伸展黏著薄片2 0之前止之期間，在矽晶圓1 1上不會以切 斷預定部9爲起點產生龜裂，但也可，如第14B圖所示，· 在伸展黏著薄片20之前即以切斷預定部9爲起點使產生龜 裂1 5，使此龜裂1 5延伸到矽晶圓1 1之表面3和裏面1 7 。產生龜裂1 5之方法例如有用刀口等之應力施加裝置沿著 切斷預定部9抵住矽晶圓1 1之裏面丨7，沿著切斷預定部9 使矽晶圓1 1產生彎曲應力，剪斷應力之方法，對矽晶圓11 賦與溫度差，沿著切斷預定部9使矽晶圓1 1產生熱應力之 方法。 這樣子’在形成切斷預定部9後沿著切斷預定部9使矽馨 晶圓1 1產生應力，而沿著切斷預定部9切斷矽晶圓1 1時 則能得出以極佳之精確度切斷之半導體晶片2 5。又，這種 情形也是在伸展黏貼在矽晶圓1 1之黏著薄片2 0時相鄰半 導體晶片2 5、2 5成對向之切斷面2 5 a、2 5 a係自相互密接 之狀態，隨著黏著薄片2 0之伸展而分離，因此，密接於矽 晶圓1 1之裏面1 7之雙面黏結樹脂層2 3也沿著切斷面2 5 a 而被切斷。因此’藉此切斷方法，相較於不切斷底材2 1而 -27- 200416954 以刀片切斷矽晶圓11及雙面黏結樹脂層2 3之情形’也能 以極佳之效率沿著切斷預定部9切斷矽晶圓U及雙面黏結 樹脂層2 3。 另外，薄化矽晶圓1 1之厚度時，即使不沿著切斷預定部 9產生應力，也有，如第1 4 B圖所示，以切斷預定部9爲 起點之龜裂1 5延伸到達矽晶圓1 1之表面3和裏面1 7之情 形。 另外，如第1 5 A圖所示，在矽晶圓1 1之內部接近表面3 處形成藉熔融處理領域1 3所產生之切斷預定部9 ’使此龜 裂1 5延伸到表面3時則能將切斷得出之半導體晶片2 5之 表面（亦即，功能元件形成面）之切斷精確度作得極高。另 外一方面，如第1 5 B圖所示，在矽晶圓1 1內部接近裏面1 7 處形成藉熔融處理領域1 3所產生之切斷預定部9，使龜裂 1 5延伸到達裏面1 7時則藉伸展黏著薄片2 0能以良好精確 度切斷雙面黏結樹脂層2 3。 其次，將說明使用日本林得庫公司之「LE-5000(商品名）」 作爲黏著薄片20之實驗結果。第1 6A、B及1 7A、B圖示 出在矽晶圓1 1之內部形成藉熔融處理領域1 3所產生之切 斷預定部9後伸展黏著薄片2 0之際之一連串之狀態之模式 圖，第1 6 A圖係開始伸展黏著薄片2 0後瞬間之狀態，第 16B圖係黏著薄片2〇在伸展中之狀態，第17A圖係黏著薄 片2 0伸展結束後之狀態，第丨7 b圖係拾取半導體晶片2 5 時之狀態。 如第1 6 A圖所示，在黏著薄片2〇開始伸展後之瞬間，矽 -28- 200416954 晶圓11係沿著切斷預定部9被切斷，相鄰半導體晶片2 5 成對向之切斷面2 5 a、2 5 a係處於密接狀態。這時，雙面黏 結樹脂層2 3尙未被切斷。而’如第1 6 B圖所示，隨著黏著 薄片2 0之伸展，雙面黏結樹脂層2 3被撕裂那樣沿著切斷 預定部9被切斷。 這樣子，當黏著薄片20結束伸展時則，如第i 7 A圖所示 ，雙面黏結樹脂層2 3也依每個半導體晶片2 5被切斷。這 時，在相互分離之半導體晶片2 5、2 5間之黏著薄片2 0之 底材2 1上殘存一層薄的雙面黏結樹脂層2 3之一部份2 3 b φ 。另外，與半導體晶片25 —起被切斷之雙面黏結樹脂層23 之切斷面2 3 a係以半導體晶片2 5之切斷面2 5 a爲基準形成 若千凹狀。藉此，確實地防止各個半導體晶片2 5之切斷面 2 5 a擠出雙面黏結樹脂。又，如第1 7B圖所示，能使用吸 著筒夾將半導體晶片25與切斷之雙面黏結樹脂層23 —起 拾取。 另外，雙面黏結樹脂層2 3若係由非伸縮性材料作成之情 形時則，如第1 8圖所示，在相互分離之半導體晶片2 5、 · 2 5間之黏著薄片2 〇之底材2 1上不會殘留雙面黏結樹脂層 2 3。藉此，能使半導體晶片2 5之切斷面2 5 a和密接於其裏 面之雙面黏結樹脂層2 3之切斷面2 3 a約略一致。 另外，如第19A圖所示，也可將具有底材21及UV硬化 樹脂層22之黏著薄片20經該UV硬化樹脂層22而黏貼於 矽晶圓1 1之裏面1 7，在形成藉熔融處理領域所產生之切 斷預定部9後’如第1 9 B圖所示，將黏著薄片2 〇之周圍朝 -29- 200416954 外側伸展，藉此將矽晶圓Π切斷成半導體晶片2 5。這種 情形，相較於保留黏著薄片2 0以刀片切斷矽晶圓之情形， 能以極佳之效率沿著切斷預定部9切斷矽晶圓1 1。 又，使用含有底材21及UV硬化樹脂層22之黏著薄片 2 0之矽晶圓1 1之切斷方法，如參照第1 9 B圖所作之說明 ，不是只有在伸展黏著薄片20前止，在矽晶圓11上不產 生以切斷預定部9爲起點之龜裂1 5之情形，如第20 A及 20B圖所示，也有在伸展黏著薄片20(第20B圖）前，使以 切斷預定部9爲起點之龜裂1 5到達矽晶圓1 1之表面3和 鲁 裏面1 7之情形（第2 0 A圖）。另外，如第2 1 A、B圖所示， 也可在伸展黏著薄片20(第21B圖）前，使以切斷預定部9 爲起點之龜裂1 5延伸到達矽晶圓1 1之表面3 (第2 1 A圖） ’或者也可如第22A及22B圖所示，在伸展黏著薄片20 (第22B圖）前，使以切斷預定部9爲起點之龜裂15延伸到 達矽晶圓11之裏面17(第22A圖）。 下文將更具體地說明本發明有關之半導體基板之切斷方 法之良好第2實施形態。另外，第2 3〜2 7 c圖係爲沿著第籲 23圖之矽晶圓之ΧΙΙΙ·ΧΙΙΙ線之部份斷面圖。 如第2 3圖所示，在作爲加工對象物之矽晶圓（半導體基 板）1 1之之表面3上，多數之功能元件2 1 5係沿著與取向平 坦1 6平行之方向和垂直方向以矩陣狀形成圖樣。接著如下 述那樣依每個功能元件2 1 5切斷矽晶圓丨}。 首先，如2 4 A圖所示，在矽晶圓丨丨之表面3側黏貼保護 月旲U以被覆功能元件2 1 5。此保護膜丨8係爲用於保護功 -30- 200416954 能元件2 1 5外，另同時把持矽晶圓1 1。黏貼保護膜1 8後 ，如第2 4 B圖所示，硏磨矽晶圓1 1之裏面1 7俾使矽晶圓 Η達到既定之厚度。接著，另對裏面1 7施予化學浸蝕以 平滑裏面1 7。這樣子，將厚度約3 5 0 μιη之矽晶圓1 1薄化 成例如1 0 0 μιη。將矽晶圓1 1薄化後即對保護膜1 8照射紫 外線。藉此，使係爲保護膜1 8之黏著層硬化，進而容易自 矽晶圓1 1剝離保護膜1 8。 接著，使用雷射加工裝置在矽晶圓Π之內部形成切斷起 點領域。亦即，如第2 5 Α圖所示，在雷射加工裝置之載置 鲁 台1 9上，將矽晶圓1 1之裏面1 7朝上藉真空吸著固定保護 膜1 8，將切斷預定線5成格子狀地設定在相鄰之功能元件 2 1 5、2 1 5之間延伸（參照第2 3圖之兩點虛線）。又，如第 2 5 B圖所示，將裏面1 7作爲雷射光入射面在矽晶圓1 1之 內部對合集光點P，以產生上述之多光子吸收之條件照射 雷射光L，移動載置台1 9使集光點P沿著切斷預定線5相 對地移動。藉此，如第2 5 C圖所示，在矽晶圓1 1之內部沿 著切斷預定線5藉熔融處理領域1 3形成切斷起點領域9。 鲁 接著，自載置台1 9取出有黏貼保護膜1 8之矽晶圓丨1， 如第2 6 A圖所示，在矽晶圓1 1之裏面1 7上，黏貼塗有雙 面黏結樹脂之薄膜2 2 0 (例如，日本林得庫公司之「LE - 5 0 0 〇 (商品名）」）。此塗有雙面黏結樹脂之薄膜2 2 0具有厚度約 ΙΟΟμηι程度，能伸展之伸張薄膜（把持構件）221，在此伸張 薄膜2 2 1上經層厚數μ m程度之U V硬化樹脂層有具備作爲 雙面黏結用之接者劑之雙面黏結樹脂層2 2 3。亦即，使雙面 -31- 200416954 黏結樹脂層2 2 3插置在中間而將伸張薄膜22 1黏貼於矽晶 圚1 1之裏面1 7。另外，在伸張薄膜2 2 1之周緣部份上設 有薄膜伸展裝置3 0。俟黏貼塗有雙面黏結樹脂之薄膜220 後則，如第2 6 B圖所示，自矽晶圓1 1之表面3側剝離保護 膜1 8，接著，如第2 6 C圖所示，對伸張薄膜2 2 1照射紫外 線。藉此，使係爲伸張薄膜22 1之黏著層之UV硬化樹脂層 硬化，進而容易自伸張薄膜2 2 1剝離雙面黏結樹脂層2 2 3。 接著，如第27A圖所示，藉薄片伸展裝置30使伸張薄膜 2 2 1伸展而將伸張薄膜2 2 1之周緣部份朝外側拉伸。藉伸 張薄膜2 2 1之伸展，以切斷起點領域9爲起點在厚度方向 上產生龜裂，此龜裂最終到達矽晶圓1 1之表面3和裏面1 7 。藉此’能沿著切斷預定線5以良好精確度切斷矽晶圓1 ;i ，進而得出多數各具有1個功能元件2 1 5之半導體晶片2 5 。又’這時，相鄰之半導體晶片2 5、2 5成對向之切斷面2 5 a 、25a係隨著伸張薄膜221之伸展而自密接狀態逐漸分離 之故，與切斷矽晶圓Η之同時密接於矽晶圓1 1之裏面1 7 之雙面黏結樹脂層2 2 3也沿著切斷預定線5被切斷。 接著’如第27B圖所示，使用吸著筒夾將半導體晶片25 逐個拾取。這時，雙面黏結樹脂層2 2 3係被切斷成與半導 體晶片25相同之外形，另外，雙面黏結樹脂層2 2 3和伸張 薄膜221之密接力降低之故，半導體晶片25其裏面係處於 與切斷之雙面黏結樹脂層2 2 3密接之狀態下被拾取。又， 如第27C圖所示，將半導體晶片25經密接於其裏面之雙面 黏結樹脂層2 2 3而被載置於引線框2 7之模墊，接著藉加熱 -32- 200416954 而行塡料接合。 上述那樣之矽晶圓1 1之切斷方法，係以表面3上形成有 功能兀件2 1 5之砂晶圓1 1作爲加工對象物，將其裏面1 7 作爲雷射光入射面’在矽晶圓1 1之內部對合集光點p照射 雷射光。藉此，在砂晶圓Π之內部產生多光子吸收，進而 沿著切斷預定線5 ’在矽晶圓1 i之內部形成藉熔融處理領 域1 3所產生之切斷起點領域9。這時，將半導體基板之裏 面作爲雷射光之入射面之理由係若將表面作爲雷射光入射 面時則功能兀:件有妨礙到雷射光之入射之虞。這樣子，在鲁 矽晶圓11內部形成切斷起點領域9時能自然地或施加較小 之力使以切斷起點領域9爲起點產生龜裂，並能使此龜裂 延伸到達矽晶圓1 1之表面3和裏面1 7。因此，在形成切 斷起點領域9後將雙面黏結樹脂層2 2 3插置在中間而將伸 張薄膜2 2 1黏貼在矽晶圓n之裏面1 7，接著，伸展此伸 張薄膜2 2 1後沿著切斷預定線5被切斷之矽晶圓1 1之切斷 面2 5 a、2 5 a則隨著伸張薄膜2 2丨之伸展而自密接狀態逐漸 分離。藉此，存在於矽晶圓丨丨和伸張薄膜2 2丨間之雙面黏 * 結樹脂層22 3也沿著切斷預定線5而被切斷。於是，相較 於用刀片切斷之情形，能以極佳之效率，沿著切斷預定線 5切斷砂晶圓1 1及雙面黏結樹脂層22 3。 而且’沿著切斷預定線5切斷之矽晶圓丨丨之切斷面2 5 a 、2 5 a初期因係相互密接，故被切斷之各個矽晶圓n和被 切斷之各個雙面黏結樹脂層2 2 3之外形幾乎相同，因此’ 也龍防止雙面黏結樹脂自各個之矽晶圓Π之切斷面2 5 a被 -jj- 200416954 擠出。 再者’在砂晶圓1 1之內部形成切斷起點領域9之前硏磨 石夕晶圓11之裏面17俾使砂晶圓具有既定厚度。這樣子， 藉將矽晶圓π薄化成既定之厚度，能沿著切斷預定線5以 更佳之精確度切斷矽晶圓1 1及雙面黏結樹脂層2 2 3。 (產業上之利用可能性） 如上說明，依本發明有關之半導體基板之切斷方法，能 以良好效率同時切斷半導體基板和雙面黏結樹脂層。 (五）圖式簡單說明： 第1圖係本實施形態有關之雷射加工方法所執行之雷射 加工中之半導體基板之平面圖。 第2圖係沿著第1圖所示之半導體基板之π-π線之斷面 圖。 第3圖係本實施形態有關之雷射加工方法所執行之雷射 加工後之半導體基板之平面圖。 第4圖係沿著第3圖所示之半導體基板之IV-IV線之斷 面圖。 第5圖係沿著第3圖所示之半導體基板之V-V線之斷面 圖。 第6圖係藉本實施形態有關之雷射加工方法切斷之半導 體基板之平面圖。‘ 第7圖係表示藉本實施形態有關之雷射加工方法切斷之 矽晶圓之一部份之斷面之照片之圖。 第8圖係示出本實施形態有關之雷射加工方法上雷射光 -34- 200416954 波長與矽基板內部之透射率之關係之曲線圖。 第9圖係本實施形態有關之雷射加工裝置之槪略構成圖。 第1 0圖係用於說明本實施形態有關之雷射加工裝置所 執行之切斷預定部之形成步驟之流程圖。 第1 1 A及1 1 B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之模式圖，其中第1 1 A圖係示出黏著薄片黏貼矽 晶圓後之狀態，第1 1 B圖係示出在矽晶圓內部形成藉熔融 處理領域所產生之切斷預定部後之狀態之圖。 第1 2 A及1 2B圖係用於說明本實施形態有關之矽晶圓之 修 切斷方法之模式圖，其中第1 2 A圖係黏著薄片伸展後之狀 態，第1 2B圖係黏著薄片被照射紫外線之狀態。 第1 3 A及1 3 B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之模式圖，其中第1 3 A圖係被切斷之雙面黏結樹 脂層和半導體晶片同時被拾取之狀態，第1 3 B圖係半導體 晶片經雙面黏結樹脂層而接合於引線框之狀態。 第1 4 A及1 4B圖係示出本實施形態有關之矽晶圓之切斷 方法上之矽晶圓與切斷預定部之關係之模式圖，其中第鲁 1 4 A圖係示出未產生以切斷預定部爲起點之龜裂之狀態， 第1 4B圖係示出以切斷預定部爲起點之龜裂到達矽晶圓之 表面和裏面之狀態。 第1 5 A及1 5 B圖係本實施形態有關之矽晶圓之切斷方法 上之矽晶圓與切斷預定部之關係之模式圖，其中第1 5 A圖 係示出以切斷預定部爲起點之龜裂到達矽晶圓表面之狀態 ，第1 5 B圖係示出以切斷預定部爲起點之龜裂到達矽晶圓 -35- 200416954 之裏面之狀態。 第1 6 A及1 6B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之一實施例之模式圖，其中第1 6 A圖係示出黏著 薄片開始伸展後瞬間之狀態，第1 6B圖係示出黏著薄片伸 展中之狀態。 第1 7 A及1 7B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之一實施例之模式圖，其中第1 7 A圖係示出黏著 薄片伸展完成後之狀態，第1 7B圖係示出拾取半導體晶片 時之狀態。 _ 第1 8圖係用於說明本實施形態有關之矽晶圓之切斷方 法之其它實施例之模式圖。 - 第1 9 A及1 9B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之其它實施例，未產生以切斷預定部爲起點之龜 裂之情形，其中第1 9 A圖係示出藉熔融處理領域形成切斷 預定部後之狀態，第1 9B圖係示出黏著薄片伸展後之狀態。 第20 A及20B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之其它實施例以切斷預定部爲起點之龜裂到達矽 ® 晶圓之表面和裏面之情形，其中第20A圖係示出藉熔融處 理領域形成切斷預定部後之狀態，第20B圖係示出黏著薄 片伸展後之狀態。 第2 1 A及2 1 B圖係用於說明本實施形態有關之矽晶圓之 切斷方法之其它實施例以切斷預定部爲起點之龜裂到達矽 晶圓之表面之情形，其中第2 1 A圖係示出藉熔融處理領域 形成切斷預定部後之狀態，第2 1 B圖係示出黏著薄片伸展 -36- 200416954 後之狀態。 第22 A及22B圖係用於說明本實施形態有關矽晶圓之切 斷方法其它實施例以切斷預定部爲起點之龜裂到達矽晶圓 之裏面之情形，其中第22A圖係示出藉熔融處理領域形成 切斷預定部後之狀態，第22B圖係示出黏著薄片伸展後之 狀態。 第23圖係本實施形態之半導體基板之切斷方法中，作爲 加工對象物之矽晶圓之平面圖。 第24A〜24C圖係用於說明本實施形態之半導體基板之 鲁 切斷方法之模式圖，其中第24A圖係示出保護膜黏貼於矽 晶圓之狀態，第24B圖係示出矽晶圓被薄化之狀態，第24C 圖係示出保護膜被紫外線照射之狀態。 第2 5 A〜2 5 C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖，其中第2 5 A圖係示出矽晶圓及保護膜 固定於載置台上之狀態，第2 5 B圖係示出矽晶圓被雷射光 照射之狀態，第2 5 C圖係示出矽晶圓之內部形成切斷起點 領域之狀態。 鲁 第2 6 A〜2 6 C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖，其中第26A圖係示出塗佈有雙面黏結 樹脂之薄膜黏貼在矽晶圓上之狀態，第2 6 B圖係示出自矽 晶圓剝離保護膜之狀態，第26C圖係示出伸張薄膜被照射 紫外線之狀態。 第2 7 A〜2 7 C圖係用於說明本實施形態之半導體基板之 切斷方法之模式圖，其中第2 7 A圖係示出伸張薄膜伸展後 -37- 200416954 之狀態，第27B圖係示出被切斷之雙面黏結樹脂層與半導 體晶片同時被拾取之狀態，第2 7 C圖係示出半導體晶片經 雙面黏結樹脂層接合於引線框之狀態。 主要部分之代表符號說明： 1 半導體基板 3 表面 5 切斷預定線 7 改質領域 9 切斷預定部 11 砂晶圓 13 熔融處理領域 17 矽晶圓之裏面 18 保護膜 2 0 黏著薄片 2 1 底材 22 UV硬化樹脂層 23 雙面黏結樹脂層 25 半導體晶片 25a 半導體晶片之切斷面 30 薄片伸展裝置 10 0 雷射加工裝置 1 0 1 雷射光源 102 雷射光源控制部 103 分色鏡200416954 (1) Description of the invention: (1) Technical field to which the invention belongs: The present invention relates to a method for cutting a semiconductor substrate used to cut a semiconductor substrate in a semiconductor device manufacturing operation or the like. (2) Prior art: In the past, this technique has been described in Japanese Patent Application Laid-Open No. 2002- 1 5 82 76 and Japanese Patent Application Laid-Open No. 2000-1 04040. First, the adhesive sheet is adhered to the inside of the semiconductor wafer through a double-sided adhesive resin layer, and then the semiconductor wafer is cut with a blade while the semiconductor wafer is held on the adhesive sheet to obtain a semiconductor wafer. When picking up the semiconductor wafer on the adhesive sheet, the double-sided adhesive resin is peeled from the adhesive sheet together with each semiconductor wafer. With this, it is possible to dispense with the operation of applying an adhesive on the inside of the semiconductor wafer, and to attach the semiconductor wafer to a lead frame. However, in the above-mentioned technology, when the semiconductor wafer held on the adhesive sheet is cut by a blade, the adhesive sheet is not cut, but the double-sided adhesive resin existing between the semiconductor wafer and the adhesive sheet must be cut accurately. Floor. Therefore, in this case, special care must be taken to cut the semiconductor wafer with a blade. (3) Summary of the Invention: Therefore, the present invention was created in view of such a situation, and an object thereof is to provide a method for cutting a semiconductor substrate capable of cutting a semiconductor substrate together with a double-sided adhesive resin layer with good efficiency. In order to achieve the above-mentioned object, the method for cutting a semiconductor substrate according to the present invention includes the following operations: forming operation, inside the semiconductor substrate to which a sheet is pasted by double-sided adhesive resin ** 6-200416954 layer, butt collection The light spot and the laser light are irradiated, thereby forming a reformed field due to multiphoton absorption inside the semiconductor substrate to form a cut-off section by the reformed field; and a cut operation, borrowed after forming the cut-off section. The sheet is stretched, and the semiconductor substrate and the double-sided adhesive resin layer are cut along the planned cutting portion. This method for cutting a semiconductor substrate is to irradiate laser light to a collection light spot inside the semiconductor substrate, so that a multi-photon absorption phenomenon occurs inside the semiconductor substrate to form a modified field. Therefore, the cutting along the semiconductor substrate The planned break line can form a planned break portion inside the semiconductor substrate. In this way, after the planned cutting portion is formed inside the semiconductor substrate, cracks can be generated in the thickness direction of the semiconductor substrate with a small force, starting from the planned cutting portion. For this reason, the semiconductor substrate can be cut with good accuracy along the intended cutting portion after the sheet adhered to the semiconductor substrate is stretched. At this time, the cut surface of the semiconductor substrate to be cut opposite to each other is initially in a close contact state, and is separated as the sheet is stretched. Therefore, the part existing between the semiconductor substrate and the sheet is also cut along the planned cutting portion. Double-sided adhesive resin layer. Therefore, the semiconductor substrate and the double-sided adhesive resin layer can be cut along the planned cutting portion with excellent efficiency, compared with the case where the semiconductor substrate and the double-sided adhesive resin layer are cut with a blade. In addition, the cut surfaces of the pair of cut semiconductor substrates are closely adhered to each other at the initial stage, so the cut semiconductor substrates and the cut double-sided adhesive resin layers are approximately the same shape. It is possible to prevent the double-sided adhesive resin from being extruded from the cut surface of each semiconductor substrate. In addition, the method for cutting a semiconductor substrate according to the present invention includes the following operations: forming operation, bonding a thin layer of 200416954 pieces on a double-sided adhesive resin layer, and aligning the light collecting points inside the β semiconductor substrate to collect light The peak power density at the point is 1 × 10 8 (W / cm2) or more and the pulse width is 1 μ3 or less. The S-ray is irradiated to form a reformed area containing a melt processing area inside the semiconductor substrate. In the field of modification, a planned cutting section is formed, and a cutting operation is performed. After the planned cutting section is formed, a stretched sheet is used to cut the double-sided adhesive resin layer of the semiconductor substrate along the planned cutting section. In this method of cutting a semiconductor substrate, in the operation of forming a planned cutting section, the inside of the semiconductor substrate is mated, and the peak power density at the light-collecting point is 1 × 10 (W / cm2) or more and the pulse width is 1 μ3. The following conditions irradiate the laser light. Therefore, the inside of the semiconductor substrate is locally heated by multiphoton absorption. By this heating, a melt processing region is formed inside the semiconductor substrate. This melt processing field is an example of the above-mentioned modification field. Therefore, compared with the case where the semiconductor substrate and the double-sided adhesive resin layer are cut with a blade, the method for cutting a semiconductor substrate can achieve excellent efficiency. The semiconductor substrate and the double-sided adhesive resin layer are cut along the planned cutting portion. In addition, the method for cutting a semiconductor substrate according to the present invention is characterized in that it includes the following operations: a forming operation for irradiating a laser beam to a collection light spot inside a semiconductor substrate that is bonded with a thin sheet through a double-sided adhesive resin layer Thereby, a reformed area is formed inside the semiconductor substrate, and a planned cutting section is formed with the modified field; and a cutting operation, after forming the planned cutting section, the semiconductor substrate is cut along the planned cutting section by stretching the sheet. And double-sided adhesive resin layer. Also, this modified field may be a field after being melt-processed. According to this method of cutting the semiconductor substrate, the reason is the same as that of the above-mentioned method of cutting the semiconductor substrate, and it is cut by a blade rather than retaining the sheet. In the case of the semiconductor substrate-8-200416954, the semiconductor substrate and the double-sided adhesive resin layer can be cut along the planned cutting portion with excellent efficiency. However, the reformed field may be formed by multi-photon absorption or formed by other reasons. In addition, the method for cutting a semiconductor substrate according to the present invention includes the following operations: a forming operation, irradiating laser light to a collection light spot inside a semiconductor substrate to which a sheet is pasted, and thereby, Forming a modified field, and forming a planned cutting section by the modified field; and a cutting operation, after forming the planned cutting section, stretching the sheet to cut the semiconductor substrate along the planned cutting section. According to this method for cutting a semiconductor substrate, the semiconductor substrate can be cut along the planned cutting portion with excellent efficiency, compared with the case where the semiconductor substrate is cut with a blade while retaining the sheet. In addition, "in the above-mentioned method for cutting a semiconductor substrate according to the present invention", the formation of a cut-off portion may be performed or the cut-off portion may be used as a starting point to cause cracks to reach the surface of the laser light incident side of the semiconductor substrate, or may be cut. The predetermined part is the starting point to make the crack reach the inside of the side opposite to the laser light incident side of the semiconductor ', or the predetermined part can be cut to start the crack to reach the surface of the laser light incident side of the semiconductor substrate and the side opposite to it. inside. In addition, the method for cutting a semiconductor substrate according to the present invention is characterized in that it includes the following operations: a forming operation, irradiating laser light to a collection light spot on the inside of the semiconductor substrate pasted with a sheet through a double-sided adhesive resin layer, whereby A reformed area due to multiphoton absorption is formed inside the semiconductor substrate, and a cut-off section is formed using the reformed field; the cut-off operation is performed along the cut-off operation after forming the cut-off section-9-200416954. Stress the semiconductor substrate, thereby cutting the semiconductor substrate along the planned cutting portion; and cutting operation, after cutting the semiconductor substrate, by stretching the sheet, the double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate . This method for cutting a semiconductor substrate also forms a modified field by multi-photon absorption, and the modified field can be used to form a planned cut portion along the cut line required to cut the semiconductor substrate. Therefore, when stress is applied to the semiconductor substrate along the planned cutting portion, the semiconductor substrate can be cut along the planned cutting portion with good accuracy. In addition, the pair of cut surfaces of the semiconductor substrate that was cut when the Lu sheet that was adhered to the semiconductor substrate was stretched and adhered to each other were separated from each other as the sheet was stretched, and then existed between the semiconductor substrate and the sheet. The double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate one by one. Therefore, as compared with the case where the semiconductor substrate and the double-sided adhesive resin layer are cut by a blade while retaining the sheet, the semiconductor substrate and the double-sided adhesive resin layer can be cut along the predetermined cutting portion with excellent efficiency. In addition, since the cut surfaces of the semiconductor substrates that are cut in pairs are closely adhered to each other at the beginning, the shape of each semiconductor substrate after cutting and the double-sided adhesive resin layer ® after cutting are approximately the same, which can prevent double The surface-bonding resin is extruded from the cut surface of each semiconductor substrate. In addition, the method for cutting a semiconductor substrate according to the present invention is characterized in that it includes the following operations: forming operation, aligning the light collecting points in the inside of the semiconductor substrate pasting the sheet through the double-sided adhesive resin layer, and using the peaks of the light collecting points Laser light is irradiated under the conditions of a power density of lxl08 (W / cm2) or more and a pulse width of 1 μδ or less. 'As a result, a reformed field containing a melt processing field -10- 200416954 is formed inside the semiconductor substrate, and the melt processing field is included. In the modified area, a planned cutting section is formed; in the cutting operation, after the planned cutting section is formed, a stress is generated on the semiconductor substrate along the planned cutting section, thereby cutting the semiconductor substrate along the planned cutting section; and In the cutting operation, after cutting the semiconductor substrate, the double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate by stretching the sheet. In addition, the method for cutting a semiconductor substrate according to the present invention is characterized in that it includes the following operations: forming operation, irradiating laser light to a collection light spot on the inside of the semiconductor substrate pasting a sheet through a double-sided adhesive resin layer, thereby A modified region is formed inside the semiconductor substrate, and a cutting pre-fixing portion is formed in the modified region. In the cutting operation, after the planned cutting portion is formed, the semiconductor substrate is stressed along the planned cutting portion. The planned cutting section cuts the semiconductor substrate; and the cutting operation, after cutting the semiconductor substrate, stretches the sheet to cut the double-sided adhesive resin layer along the cut surface of the semiconductor substrate. In addition, this modified field is also a field after melt processing. According to the cutting method of some semiconductor substrates, it is also the same reason as the above-mentioned cutting method of the semiconductor substrate. Compared with the case of cutting the semiconductor substrate and the double-sided adhesive resin layer with a blade, it is excellent. The efficiency is to cut the semiconductor substrate and the double-sided adhesive resin layer along the planned cutting portion. In order to achieve the above-mentioned object, the "cutting method for a semiconductor substrate according to the present invention" is a cutting method for cutting a semiconductor substrate having a semiconductor substrate having a functional element formed on a surface along a predetermined cutting line, and is characterized by including the following Operation: forming operation, using the inside of the semiconductor substrate as the incident surface of the laser light 'to irradiate the laser beam with the collected light points inside the semiconductor substrate to form a modified field, whereby the modified field is incident along the cut-off line distance -11- 200416954 A cutting starting area is formed on the inner side of a predetermined distance from the surface; in the writing industry, after the cutting starting area is formed, a stretchable holding member is mounted inside the semiconductor substrate through a double-sided adhesive resin layer; and the cutting operation is performed in After the holding member is attached, the holding member is stretched to thereby cut the semiconductor substrate and the double-sided adhesive resin layer along a predetermined cutting line. In this method for cutting a semiconductor substrate, a semiconductor substrate having functional elements formed on the surface is used as a processing object. In addition, by using the inside of such a semiconductor substrate as a laser light incident surface, the light spots are collected and irradiated with laser light inside the semiconductor substrate, thereby generating, for example, multi-photon absorption or light absorption equivalent thereto, and further cutting along The planned break line forms a cut-off starting area in the semiconductor substrate due to the modified area. In this case, the reason for using the inside of the semiconductor substrate as the incident surface of the laser light is that if the surface is used as the incident surface of the laser light, the functional element may prevent the incident of the laser light. In this way, when a cutting starting area is formed inside the semiconductor substrate, naturally or by applying a small force, a crack can be generated starting from the cutting starting area, and this crack can reach the surface of the semiconductor substrate and inside. Therefore, after forming the cutting starting area, the semiconductor substrate is equipped with a stretchable holding member through a double-sided adhesive resin layer. When the holding member is stretched, the semiconductor substrate is cut along a predetermined cutting line. The surface is separated from the close contact state with the extension of the holding member. Thereby, the double-sided adhesive resin layer existing between the semiconductor substrate and the holding member is cut along a predetermined cutting line. As a result, the semiconductor substrate and the double-sided adhesive resin layer can be cut along the planned cutting line with excellent efficiency compared to the case of cutting with a blade. In addition, the cut surfaces of the semiconductor substrates cut along the planned cutting line are initially tightly adhered to each other, so each of the semiconductor substrates and each double-sided adhesive resin layer that was cut was cut -12-200416954. The shape is approximately the same, thereby preventing the double-sided adhesive resin from being extruded from the cut surface of each semiconductor substrate. Here, the "functional element" means, for example, a semiconductor operating layer formed by crystal growth, a light receiving element such as a photodiode, a light emitting element such as a laser diode, and a circuit element formed as a circuit. In addition, it is preferable to have a work of honing the inside of the semiconductor substrate so that the thickness of the semiconductor substrate reaches a predetermined thickness before forming the cutting starting area. In this way, by honing the inside of the semiconductor substrate to a predetermined thickness, the semiconductor substrate and the double-sided adhesive resin layer can be cut more accurately along the predetermined cutting line. In addition, honing means cutting, honing, chemical etching, and the like. In addition, the modified field includes the case of the melt processing field. If the object to be processed is a semiconductor substrate, the melting process area is formed by the irradiation of laser light. Since this melt processing field is an example of the above-mentioned modified field, the semiconductor substrate can also be easily cut in this case, and the semiconductor substrate and the double-sided adhesive resin layer can be cut along a predetermined cutting line with good efficiency. ® In addition, in the method for cutting a semiconductor substrate according to the present invention, when a cutting starting area is formed, the cutting starting area can be used as a starting point to cause a crack to reach the surface of the semiconductor substrate, or the cutting starting area can be used as a starting point. The crack can reach the inside of the semiconductor substrate, or the crack can reach the surface and the inside of the semiconductor substrate by cutting the starting area. (4) Embodiments: (Best Mode for Implementing the Invention) -13- 200416954 Hereinafter, a good embodiment of a method for cutting a semiconductor substrate according to the present invention will be described in detail with reference to the drawings. The method for cutting a semiconductor substrate according to this embodiment is to irradiate laser light to a collection light spot inside the semiconductor substrate, thereby forming a modified area generated by multi-photon absorption inside the semiconductor substrate, and thereby improving the quality. The area forms a planned cutting section. Therefore, before describing the method for cutting a semiconductor substrate according to this embodiment, a laser processing method performed to form a planned cutting section will be described focusing on multiphoton absorption. If the energy of photon hi) is less than the band gap EG of the material, it is optically transparent. Therefore, the conditions for being absorbed by the material are hi) > E0. However, even if it is optically transparent, if the intensity of the laser light is made very large (nhi) > EG conditions (n = 2, 3, 4, ...), the material will absorb. This phenomenon is called multiphoton absorption. In the case of a pulse wave, the intensity of the laser light is determined by the peak power density of the laser light collection point (W / cm2). For example, the condition that the peak power density is 1x108 (W / cm2) or more will cause multi-photon absorption. The peak power density is determined by (energy of each pulse of laser light at the collection point) + (beam spot cross-sectional area X pulse width). In the case of a continuous wave, the intensity of the laser light is determined by the electric field intensity (W / cm2) of the light collecting point of the laser light. The principle of laser processing according to this embodiment using such a multi-photon absorption will be described below with reference to Figs. Fig. 1 is a plan view of the semiconductor substrate 1 during laser processing, and Fig. 2 is a cross-sectional view taken along the line II-II of the semiconductor substrate 1 shown in Fig. 1. Fig. 3 is a semiconductor substrate after laser processing. Plane view of substrate 1, FIG. 4 is a cross-sectional view taken along line IV-IV of the semiconductor substrate -14-200416954 1 shown in FIG. 3, and FIG. 5 is a view taken along semiconductor substrate 1 shown in FIG. A sectional view of the VV line, FIG. 6 is a plan view of the semiconductor substrate 1 after cutting. As shown in Figs. 1 and 2, on the surface 3 of the semiconductor substrate 1, there are provided predetermined cut lines 5 necessary for cutting the semiconductor substrate 1. The planned cutting line 5 is an imaginary line extending in a straight line (a line may be actually drawn on the semiconductor substrate 1 as the planned cutting line 5). The laser processing according to this embodiment is based on the condition that multiphoton absorption is generated, and the semiconductor substrate 1 is irradiated with laser light at the collection light spot P inside the semiconductor substrate 1 to form a modified field. In addition, the light collection point is the place where the light beam is collected by Mine ®. By moving the laser light relatively along the planned cutting line 5 (i.e., in the direction of arrow A), the light collecting point P is moved along the planned cutting line 5. Thereby, as shown in Figs. 3 to 5, along the cut-to-cut line 5, a modified region 7 is formed only inside the semiconductor substrate 1, so that the modified region 7 forms a cut-to-cut portion 9. The laser processing method according to this embodiment does not form a modified field by absorbing the laser light L from the semiconductor substrate 1 to heat the semiconductor substrate 1. Instead, the laser light L is transmitted through the semiconductor substrate 1, and multi-photon absorption * is generated inside the semiconductor substrate 1, thereby forming a modified field 7. Accordingly, the surface 3 of the semiconductor substrate 1 hardly absorbs laser light, and therefore, the surface 3 of the semiconductor substrate 1 does not melt. When the semiconductor substrate 1 has a starting point at the point where the semiconductor substrate 1 is to be cut, the semiconductor substrate 1 is cracked from the starting point. Therefore, as shown in FIG. 6, the semiconductor substrate 1 can be cut with a small force. Therefore, the semiconductor substrate 1 can be cut without causing unnecessary cracks on the surface 3 of the semiconductor substrate 1. In addition, when cutting a semiconductor substrate starting from a planned cutting section, there are two ideas described below. One is a situation in which a semiconductor substrate 1 is cracked by artificial force applied to the semiconductor substrate 1 after the planned cut portion is formed, and the semiconductor substrate 1 is cut. This case is, for example, a case where the thickness of the semiconductor substrate is large. The application of artificial force means, for example, applying a bending stress to the semiconductor substrate along a cut portion of the semiconductor substrate, a shear stress, or applying a temperature difference to the semiconductor substrate to generate a thermal stress. The other is a case where the planned cutting section is formed, and the planned cutting section is used as a starting point to naturally crack in the cross-sectional direction (thickness direction) of the semiconductor substrate, and finally the semiconductor substrate is cut. This is, for example, if the thickness of the semiconductor substrate is small, the cut-off portion can be formed by the reformed field in one row, and if the thickness of the semiconductor substrate is large, the reformed field can be formed in multiple rows in the thickness direction. A planned cutting section is formed. In addition, in the case of this natural cracking, at the cutting place, the portion corresponding to the surface where the planned cutting portion is not formed will not be preliminarily split, and only the portion corresponding to the planned cutting portion can be cut. Therefore, cutting can be well controlled. In recent years, the thickness of semiconductor substrates such as silicon wafers has become thinner. Therefore, this method of controlling silicon cutting is effective. In addition, the modified area formed by multiphoton absorption in this embodiment is the melt processing area described below. The collected light spots are aligned inside the semiconductor substrate, and the laser light is irradiated under conditions such that the electric field intensity at the collected points is 1x10 (W / cm2) or more and the pulse width is lps or less. Thereby, the inside of the semiconductor substrate is locally heated by multiphoton absorption. Thereby, a melting process area is formed inside the semiconductor substrate. The so-called melting treatment field refers to the field that is solidified after a short melting, the field that is truly molten, and the field that is re-solidified from the molten state. It can also be said to be the field of phase change with -16-200416954. field. In addition, the so-called melt processing field can also refer to a field in which the structure of a p-crystal, an amorphous structure, or a bulk structure is changed from one structure to another. That is, for example, "the field of changing from a single crystal structure to an amorphous structure, the field of changing from a monomer structure to a polycrystalline structure", the field of changing from a single crystal structure to a structure including an amorphous structure and a polycrystalline structure. When the semiconductor substrate has a silicon single crystal structure, the melt processing field is, for example, a structure of amorphous silicon. The upper limit of the electric field strength is, for example, 1 x 1 0 12 (w / c m2). Pulse width, for example, Ins ~ 200ns is preferred. _ The inventors have confirmed through experiments that a melt processing area is formed inside the silicon wafer. The experimental conditions are as follows. (A) Semiconductor substrate: Silicon wafer (thickness: 350μηι, outer diameter: 4 inches) (B) Laser light source: Semiconductor laser excitation Nd: YAG laser wavelength: 1.06 4 nm Laser light spot area: 3. 14xl (T8cm2 Vibration form: Q-switching pulse · Cyclic frequency: 100kHz Pulse width: 30ns Output: 20μ >! / Pulse laser light quality: TEM00 Polarization characteristics: Linearly polarized light (C) Lens for collecting light: 5 0-17 -200416954 N. A.  : 0. 55 Transmittance to laser light wavelength: 60% (D) Movement speed of the mounting table on which the semiconductor substrate is placed: 100 mm Figure 7 is a photograph showing a cross section of a part of a silicon wafer cut by laser processing under the above conditions. The silicon wafer 11 has a melt processing area 13 formed inside it. In addition, The size in the thickness direction of the melt-processed area 13 formed under the above conditions is about 100 μm.  The following will describe the formation of melt processing fields by multiphoton absorption. Fig. 8 is a graph showing the relationship between the wavelength of laser light and the transmittance inside the silicon substrate. but, The reflection components on the front and back sides of the silicon substrate are removed, and only the internal transmittance is shown. The thickness t of the silicon substrate is 50 μm,  ΙΟΟμηι, 200μηι, 500μηι, The above relationship is 100 μm.  E.g, About Nd:  The wavelength of YAG laser is 1064nm, When the thickness of the silicon substrate is less than 500 μm, it can be seen from the figure that more than 80% of laser light penetrates the inside of the silicon substrate. The thickness of the silicon wafer 11 shown in FIG. 7 is W 〇 μιη, Therefore, the melt processing area 1 3 generated by multi-photon absorption is formed near the center of the silicon wafer. That is, a portion of 175 μm from the surface. In this case ® transmittance, If you refer to a silicon wafer with a thickness of 2 μm, It's over 90%, Therefore, the laser light absorbed by the silicon wafer 1 1 is very small. Almost all transmission. This situation means that instead of absorbing laser light inside the silicon wafer 1 1, a melt processing area 13 is formed inside the silicon wafer 11 (that is, the melt processing area is not formed by using ordinary heating of laser light), The melt processing field 1 3 is formed by multiphoton absorption. Forming a melting process using multiphoton absorption Recorded in the lecture of the National Assembly of the Japan Welding Society, Chapter 6 6 -18- 200416954 (April 2000), On pages 72 to 73 of the article "Evaluation of Processing Characteristics of Silicon Wafers Performed by Pico (pi c 〇) (1 0 · 12) Second Pulse Laser".  In addition, The silicon wafer is cracked in the direction of the cross section starting from the planned cutting section formed by the melt processing field. This cracking reaches the surface and inside of the silicon wafer and is eventually cut off. The cracks that reach the surface and the inside of the silicon wafer also grow naturally. There are also cases of growth by exerting force on silicon wafers. In addition, From the time when the predetermined portion is cut to the surface and inside of the silicon wafer, the crack grows naturally. There may be a case where cracking is started from a molten state in which the melt-processing area forming the planned cut-off portion is formed. In some cases, cracks may occur when the melt processing area where the cut-off portion is formed is re-solidified from the molten state. but,  In either case, The melt processing area is formed only inside the silicon wafer. On the cut surface after cutting, As shown in Figure 7, The melt processing area is formed only inside. After forming the planned cutting section in the semiconductor substrate by the melt processing area, when cutting, Because it is not easy to produce unnecessary cracks that deviate from the cut-off line, Therefore, it is easy to control the cut.  In addition, Considering the crystal structure of the semiconductor substrate and its cleavability, etc., If a cut-off starting area is formed as follows, You can start with this cut-off area ® With less force, And good accuracy, Cut the semiconductor substrate.  that is, In the case of a substrate made of a single crystal semiconductor with a diamond structure such as silicon, Preferably along the (1 1 1) plane (the first split plane)->  The direction of the (1 10) plane (second split plane) forms the cutting start area. In addition, In the case of a substrate made of a III-V compound semiconductor of a sphalerite-type structure such as GaAs, it is preferable to form a cutting starting region along the direction of the (110) plane.  In addition, If you follow the direction required to form the above-mentioned cut-off starting area (for example, -19- 200416954, Along the (1 1 1) plane on the single crystal silicon substrate), Or when the orientation is flat on the substrate in a direction orthogonal to the direction required to form the cutting start area, Based on the flatness of the orientation, It is possible to easily and accurately form a cutting start region in a direction required to form the cutting start region on the substrate.  A laser processing apparatus used in the above-mentioned laser processing method will be described with reference to FIG. FIG. 9 is a schematic configuration diagram of the laser processing apparatus 100.  The laser processing apparatus 100 includes a laser light source 1 0 1 that generates laser light L,  The laser light source control unit 102 that controls the laser light source 1 0 1 in order to adjust the output and pulse of the laser light L, etc. A dichroic mirror 103 having a function of reflecting the laser light L and configured to change the orientation of the optical axis of the laser light L by 90 °, A light collection lens 105 for collecting the laser light L reflected by the dichroic mirror 103, A mounting table 107 on which the processing object 1 is irradiated with laser light collected by the light collecting lens 105 is collected. An X-axis stage 109 for moving the mounting stage 107 in the X-axis direction, The Y-axis table 1 1 1 which moves the mounting table 107 toward the Y-axis orthogonal to the X-axis, Z-axis stage 1 1 3 for moving the mounting stage 1 7 in the Z-axis direction orthogonal to the X-axis and Y-axis, And control these three stations 109, 1 1 1. 1 1 3 of the moving table control section 1 1 5.  Since the Z-axis direction is a direction orthogonal to the surface 3 of the semiconductor substrate 1, Therefore, it becomes the focus direction of the laser light L incident on the semiconductor substrate 1. So, By moving the Z-axis stage 1 1 3 in the Z-axis direction, The light collection point P of the laser light L can be aligned inside the semiconductor substrate 1. In addition, The movement of this focusing point 0 in the direction of the χ (γ) axis is performed by moving the semiconductor substrate 1 in the X (Y) axis direction by the X (Y) axis stage 109 (111).  The laser light source 101 is a Nd ·· YAG laser that generates pulsed laser light. Can -20- 200416954 as the laser source of the laser light source 101 'additionally has Nd:  YV〇4 laser, Nd:  YLF laser and titanium sapphire laser. In the case of forming a melt processing field, it is best to use N d · Y A G laser, N d:  Y V 0 4 laser, N d ·· Y L F Laser. This embodiment, Although the processing of the semiconductor substrate 1 uses pulsed laser light, However, as long as it can cause multiphoton absorption, continuous wave laser light can also be used.  The laser processing device 1 0 0 is additionally provided with an observation light source 1 1 7 for generating visible light for illuminating the visible light of the semiconductor substrate 1 placed on the mounting table 1 7 7 and a dichroic mirror 103 and a light collecting device. Beam splitter 119 for visible light® on the same optical axis of lens 105. The dichroic mirror 103 is disposed between the beam splitter 119 and the light collecting lens 105. The beam splitter 119 has the ability to reflect half of the visible light, The function of making another semi-transmission 'is configured to change the orientation of the optical axis of the visible light by 90 °. About half of the visible light from the observation light source 117 is reflected by the beam splitter 1 1 9. The reflected visible light passes through the dichroic mirror 103 and the lens for collecting light 105. On the other hand, the surface 3 containing the planned cut lines 5 and the like of the semiconductor substrate 1 is irradiated.  The laser processing apparatus 1 has a beam splitter 1 19, And a photographing element 121 and a junction lens 1 2 3 arranged on the same optical axis as the dichroic mirror 103 and the light collecting lens 105. Examples of the imaging element 1 2 1 include a C C D camera. The reflected light that irradiates visible light including the surface 3 that cuts the planned line 4 and the like is transmitted through the light collection lens 105, Dichroic mirror 103, Beam splitter 119, After the image is formed on the image-forming lens 1 2 3, it is photographed by the imaging element 丨 2 丨 and becomes photographic data.  Laser processing device 1 〇 〇 In addition, it has a photo data processing unit 1 2 5 that inputs the photo output from the photo element 1 2 1 -21- 200416954, And an overall control unit 127 that controls the entire laser processing apparatus 001, And monitor 129. The photographic data processing unit 125 is based on photographic data. The calculation is used to align the focal point of the visible light generated by the observation light source 1 1 7 with the focal point data of the surface 3. then, Based on this focal point, The stage control unit 1 1 5 moves and controls the Z axis stage 1 1 3, With this, Align the focal point of visible light with surface 3. then, The photo data processing unit 1 2 5 functions as an auto-focus unit. In addition, The photographic data processing department 1 2 5 is based on photographic data. Image data such as an enlarged image of the computing surface 3. This image data is then sent to the overall control department 1 2 7 Various processes are executed by the overall control unit and sent to the monitor 1 2 9. With this, An enlarged image is displayed on the monitor 1 2 9.  The overall control unit 1 2 7 inputs data from the station control unit 1 1 5 And the image data of the photographic data processing department 1 2 5 etc. And based on this information, Laser light source control unit 1 02, Observation light source 1 1 7 and table control unit 1 1 5 With this, Controls the overall laser processing device 100. then, The overall control unit 1 2 7 operates as a computer unit.  The steps for forming the cut-off section performed by the laser processing apparatus 100 configured as described above will be described below with reference to FIGS. 9 and 10. Fig. 10 is a flowchart for explaining the steps of forming the cut-off scheduled part executed by the laser processing apparatus 100.  The light absorption characteristics of the semiconductor substrate 1 were measured with a spectrophotometer or the like (not shown). Based on this measurement result, A laser light source 1 0 1 (S 1 0 1) is selected that generates laser light L having a wavelength that is transparent to the substrate 1 or a wavelength that has little absorption. then,  The thickness of the semiconductor substrate 1 was measured. Based on the measurement results of the thickness and the refractive index of the semiconductor -22- 200416954 substrate 1, The amount of movement of the semiconductor substrate 1 in the Z-axis direction is determined (S103). This is to make the light collecting point P of the laser light L be located inside the semiconductor substrate 1, The amount of movement in the Z-axis direction of the semiconductor substrate 1 based on the light collection point P of the laser light L located on the surface 3 of the semiconductor substrate 1 as a reference. This amount of movement is input to the overall control unit 1 2 7.  The semiconductor substrate 1 is placed on a mounting table 107 of a laser processing apparatus 100. also, The self-observation light source UI 7 generates visible light to irradiate the semiconductor substrate 1 (S 1 0 5). The surface 3 of the semiconductor substrate 1 including the planned cut-off line 5 is imaged by the imaging element 1 2 1. The planned cutting line 5 is an imaginary line required for cutting the semiconductor substrate 1. The photographic data of the photographed element 1 2 1 is sent to the photographic data processing department 1 2 5 ° Based on this photographic data, The photographic data processing unit 1 2 5 calculates the focal energy of the visible light of the observation light source 1 1 7 at the focal data of the surface 3 of the semiconductor substrate 1 (S 107).  This focus data is sent to the stage control section 1 1 5. The stage control unit 1 15 moves the Z-axis stage 113 in the Z-axis direction based on the focus data (S1 09). By this, The visible light of the observation light source 1 1 7 is focused on the surface 3 of the semiconductor substrate 1. In addition, The photographic data processing unit 1 2 5 calculates, based on the photographic data, the enlarged image data of the surface 3 of the semiconductor substrate 1 including the planned cutting line 5. This enlarged image data is sent to the monitor 1 2 9 through the overall control unit 1 2 7. In this way, the enlarged image in the vicinity of the cut-off line 5 is displayed on the monitor 1 2 9 and the overall control unit 1 2 7 inputs the movement amount data determined in advance in step S 103. This movement amount data is then sent to the stage control section 1 1 5. The station control unit 1 1 5 is based on this movement data, By the Z-axis stage 1 1 3, the semiconductor substrate is moved in the direction of the Z-axis -23-200416954 so that the position of the light collecting point P of the laser light L is inside the semiconductor substrate 1 (S 1 1 1).  then, The laser light L is generated from the laser light source 1 01, The laser light L is irradiated onto a predetermined cut line 5 of the surface 3 of the semiconductor substrate 1. The collection point of the laser light L is because the light point P is located inside the semiconductor substrate 1, Therefore, the melt processing area is formed only inside the semiconductor substrate 1. also, Make the X-axis stage 109, The Y-axis stage 1 俾 moves along the planned cutting line 5 俾 The molten processing area formed along the planned cutting line 5 forms a planned cutting section (S 1 1 3) along the planned cutting line 5 inside the semiconductor substrate 1. ).  Lu borrowing the above steps, Completing the steps of cutting off the scheduled part performed by the laser processing device 1 (30, In addition, a planned cutting section is formed inside the semiconductor substrate 1. After the planned cutting portion is formed inside the semiconductor substrate 1, a small force can cause cracks in the thickness direction of the semiconductor substrate 1 along the planned cutting portion.  below, A method for cutting the semiconductor substrate 1 according to this embodiment will be described. In addition, Here, A silicon wafer 11 which is a semiconductor wafer is used as a semiconductor substrate.  First of all, As shown in Figure 1 1 Α, The silicon wafer 1 1 is attached to the inner surface 1 7 of the silicon wafer 11 and the sheet 2 0 is coated on the inner surface of the silicon wafer 1 1 丨 7. This adhesive sheet 20 has a substrate 21 having a thickness of about 100 μm, On this substrate 21, a UV-curable resin layer 22 having a layer thickness of several µm is provided. In addition, A double-sided adhesive resin layer 23 is provided on the UV-curable resin layer 22 as an adhesive for double-sided bonding. In addition, a plurality of functional elements are formed in a matrix on the surface of the silicon wafer 11. Here, The so-called functional element refers to a light-receiving element such as a photodiode,  Light emitting elements such as laser diodes, Or circuit elements formed as circuits -24- 200416954 and so on.  then, As shown in Figure 1 1 B, For example, using the laser processing device 1 0 0 described above, The collection spot P is irradiated with laser light from the surface 3 side within the silicon wafer 1 1. With this, Formed inside the silicon wafer Π is a melt processing field in the reforming field 1 3, In this melt-processed area 13, a planned cutting section 9 is formed. The laser light is moved and irradiated between a plurality of functional elements arranged in a matrix on the surface 3 of the silicon wafer 11 when the planned cutting section 9 is formed. Thereby, a predetermined cut-out portion 9 extending in a grid shape is formed directly below the adjacent functional elements.  After the planned cut-off portion 9 is formed, As shown in Figure 1 2 A, The sheet stretching device 30 is used to stretch the periphery of the adhesive sheet 20 to the outside so that the adhesive sheet 20 is stretched. By the extension of the adhesive sheet 20, A crack is generated in the thickness direction starting from the planned cutting portion 9. This crack extends to the surface 3 and the inside 17 of the silicon wafer 11. With this, The silicon wafer 11 can be cut with good accuracy according to each functional element. Furthermore, each semiconductor wafer with one functional element can be obtained at 25 °. At this time, Adjacent semiconductor wafers 2 5. 2 5 Cross sections facing in pairs 2 5 a, 2 5 a Early, Is in a tight state, But with the extension of the adhesive sheet 20 Lu gradually separated, therefore, At the same time as the silicon wafer 11 is cut, the double-sided adhesive resin layers 23, which are in close contact with the inner surface 17 of the silicon wafer 11 are also cut along the cut-off portion 9.  Furthermore, The sheet stretching device 30 may be placed on a stage on which a silicon wafer Π is placed when the planned cutting section 9 is formed. There are also cases where it is not on the stage. If it is not installed on the stage, the silicon wafer 11 placed on the stage 1 1 is moved to a sheet extension device 25- 200416954 30 after being formed by a cutting measure 9 On the stage.  After the adhesive sheet 20 has finished stretching, As shown in Figure 1 2 B, The adhesive sheet 20 is irradiated with ultraviolet rays from the inner side, 俾 The UV curing resin layer 2 2 is cured. By this, The adhesion between the UV-curable resin layer 22 and the double-sided resin layer 23 is reduced.  In addition, Ultraviolet irradiation may be performed before the adhesive sheet 20 starts to be stretched.  then, As shown in Figure 1 3 A, The semiconductor wafer 25 is sequentially picked up using a chuck or the like of a pickup device. At this time, the 'double-sided adhesive resin layer 23 is cut into the same shape as the semiconductor wafer 25, In addition, The adhesion between the double-sided adhesive resin layer 2 3 and the U V hardened resin layer 2 2 is reduced, Therefore, the semiconductor wafer Lu 25 is picked up in a state where the cut double-sided adhesive resin layer 23 is in close contact with the semiconductor wafer 25. also, As shown in Figure 1 3 B, The semiconductor wafer 25 is placed on the die pad of the lead frame 27 through the double-sided adhesive resin layer 23 which is closely adhered to the inside. Then the material is joined by heating.  As above, The cutting method of silicon wafers is a fusion processing field formed by multiphoton absorption. A planned cutting portion 9 is formed inside the silicon wafer Π along a predetermined cutting line required for cutting the silicon wafer 11. For this reason, After the adhesive sheet 20 adhered to the silicon wafer 11 is stretched, the silicon wafer 11 can be cut with good accuracy along the predetermined cutting section 9, Further, a semiconductor wafer 25 is obtained. At this time, Adjacent semiconductor wafers 25, 25 pairs of cut surfaces 25a,  Initially 25a is in a tight state, As the adhesive sheet 20 is extended and gradually separated, therefore, The double-sided adhesive resin layers 23, which are closely adhered to the inner surface 17 of the silicon wafer Π, are also cut along the cut-off portion 9. therefore, Compared with the case where the silicon wafer 11 and the double-sided adhesive resin layer 23 are cut without cutting the substrate 21, The silicon wafer 11 and the double-sided adhesive resin -26- 200416954 layer 23 can be cut along the cut-off section 9 with excellent efficiency.  and, Adjacent semiconductor wafers 2 5. 2 5 Cross-sections facing each other 2 5 a,  At the beginning of 25a, they are connected to each other. Therefore, the shapes of the cut semiconductor wafers 25 and the cut double-sided adhesive resin layers 23 are approximately the same. Furthermore, it is possible to prevent the double-sided adhesive resin from cutting the surface 2 5 a of each semiconductor wafer 25. 2 5 a is squeezed out.  Cutting method of the above silicon wafer 1 1 As shown in Figure 1 4 A, Until the stretch of the adhesive sheet 20, Cracks do not occur on the silicon wafer 11 starting from the intended cutting section 9, But it works, As shown in Figure 14B, · Before the adhesive sheet 20 is stretched, cracks 1 and 5 are generated starting from the cut-off portion 9. This crack 15 extends to the surface 3 and the inside 17 of the silicon wafer 11. The method for generating the cracks 15 is, for example, using a stress application device such as a knife edge, etc. along the planned cutting portion 9 to abut against the inside of the silicon wafer 11 1 Bending stress is applied to the silicon wafer 1 1 along the planned cutting portion 9, Method of shear stress, A temperature difference is given to the silicon wafer 11, A method for thermally stressing the silicon wafer 11 along the planned cutting section 9.  In this way, after the planned cutting portion 9 is formed, stress is generated on the silicon wafer 11 along the planned cutting portion 9, On the other hand, when the silicon wafer 11 is cut along the predetermined cutting section 9, the semiconductor wafer 25 can be cut with excellent accuracy. also, In this case, the adjacent semiconductor wafer 25 is also stretched when the adhesive sheet 20 attached to the silicon wafer 11 is stretched. 2 5 Cross-sections facing each other 2 5 a, 2 5 a is in a state of close contact with each other, As the adhesive sheet 20 is stretched and separated, therefore, The double-sided adhesive resin layer 23, which is in close contact with the inner surface 1 7 of the silicon wafer 1 1, is also cut along the cutting surface 2 5 a. So ’by this cut-off method, Compared to the case where the substrate 2 1 is not cut and -27- 200416954 is used to cut the silicon wafer 11 and the double-sided adhesive resin layer 2 3 by a blade, it can also be cut along the planned cutting portion 9 with excellent efficiency. 2. Silicon wafer U and double-sided adhesive resin layer 2 3.  In addition, When the thickness of the silicon wafer 11 is reduced, Even if no stress is generated along the planned cutting section 9, There are, As shown in Figure 1 4 B, The crack 15 starting from the cut-off portion 9 is extended to the surface 3 and the inside 17 of the silicon wafer 11.  In addition, As shown in Figure 1 5 A, In the silicon wafer 1 1 near the surface 3, a planned cut-out portion 9 generated by the melt processing area 1 3 is formed. When the crack 15 extends to the surface 3, the semiconductor wafer 2 obtained by cutting can be cut. Surface of 5 (ie, The cutting accuracy of the functional element forming surface is extremely high. on the other hand, As shown in Figure 1 5B, In the silicon wafer 1 1, a cut-off portion 9 formed by melting the processing area 1 3 is formed near the inside 17. When the crack 15 is extended to the inside 17, the double-sided adhesive resin layer 23 can be cut with good accuracy by stretching the adhesive sheet 20.  Secondly, The results of experiments using "LE-5000 (trade name)" of Japan Lindoku Corporation as the adhesive sheet 20 will be described. Section 16A, B and 17A, B shows a schematic diagram of a state where a series of states is formed in the silicon wafer 1 1 when the cut-off portion 9 generated by the melt processing area 13 is stretched and the adhesive sheet 20 is stretched. Picture 16 A shows the state immediately after starting to stretch the adhesive sheet 20. Figure 16B shows the state of the adhesive sheet 20 in the stretched state. Figure 17A shows the state of the adhesive sheet 20 after stretching. Figure 7b shows the state when the semiconductor wafer 2 5 is picked up.  As shown in Figure 16 A, Immediately after the adhesive sheet 20 began to stretch, Silicon -28- 200416954 Wafer 11 is cut along the planned cutting section 9, Adjacent semiconductor wafers 2 5 have a cross section 2 5 a, 2 5 a is in tight contact. At this time, The double-sided adhesive resin layer 23 was not cut. And as shown in Figure 16B, With the extension of the adhesive sheet 20, The double-sided adhesive resin layer 23 is cut along the planned cutting portion 9 as it is torn.  in this way, When the adhesive sheet 20 finishes stretching, As shown in Figure i 7 A, The double-sided adhesive resin layer 23 is also cut for each semiconductor wafer 25. At this time, In separated semiconductor wafers 2 5, A thin layer of a double-sided adhesive resin layer 2 3 2 2 3 b φ remains on the substrate 2 1 of the 2 to 5 adhesive sheets 20. In addition, The cut surface 2 3 a of the double-sided adhesive resin layer 23 that has been cut off from the semiconductor wafer 25 is formed in a highly concave shape based on the cut surface 2 5 a of the semiconductor wafer 25. With this, Exactly preventing the double-sided adhesive resin from being extruded from the cut surface 2 5 a of each semiconductor wafer 25. also, As shown in Figure 17B, The semiconductor wafer 25 and the cut double-sided adhesive resin layer 23 can be picked up together using a suction collet.  In addition, If the double-sided adhesive resin layer 2 3 is made of a non-stretchable material, As shown in Figure 18, In separated semiconductor wafers 2 5,  · The double-sided adhesive resin layer 2 3 does not remain on the substrate 2 1 of the adhesive sheet 20 between 2 and 5. With this, The cut surface 25a of the semiconductor wafer 25 and the cut surface 2a of the double-sided adhesive resin layer 23, which is in close contact with it, can be made approximately the same.  In addition, As shown in Figure 19A, The adhesive sheet 20 having the substrate 21 and the UV-curable resin layer 22 may also be adhered to the inner surface 1 7 of the silicon wafer 11 through the UV-curable resin layer 22. After forming the cut-off portion 9 generated by the melt processing field, as shown in FIG. 19B, Extend the area around the adhesive sheet 〇 towards the outside of -29- 200416954, Thereby, the silicon wafer Π is cut into semiconductor wafers 25. This situation, Compared with the case where the adhesive wafer 20 is retained and the silicon wafer is cut by a blade,  The silicon wafer 11 can be cut along the cut-off section 9 with excellent efficiency.  also, Cutting method of silicon wafer 1 1 using adhesive sheet 20 containing substrate 21 and UV-curable resin layer 22, As explained with reference to Figure 19B, Not just before stretching the adhesive sheet 20, No crack 15 is generated on the silicon wafer 11 starting from the cut-off portion 9. As shown in Figures 20 A and 20B, Also before stretching the adhesive sheet 20 (Fig. 20B), It is assumed that the crack 15 starting from the cut-off portion 9 reaches the front surface 3 and the back surface 17 of the silicon wafer 11 (Fig. 20A). In addition, Such as 2 1 A, As shown in Figure B,  Alternatively, before stretching the adhesive sheet 20 (Fig. 21B), The crack 15 starting from the cut-off portion 9 is extended to the surface 3 of the silicon wafer 11 (Fig. 2A), or as shown in Figs. 22A and 22B Before stretching the adhesive sheet 20 (Fig. 22B), The crack 15 starting from the planned cutting portion 9 is extended to the inside 17 of the silicon wafer 11 (Fig. 22A).  Hereinafter, a preferred second embodiment of the method for cutting a semiconductor substrate according to the present invention will be described more specifically. In addition, Figures 2 3 to 2 7 c are partial cross-sectional views taken along line XIII, XIXII of the silicon wafer shown in Figure 23.  As shown in Figures 2 and 3, On the surface 3 of the silicon wafer (semiconductor substrate) 1 1 which is the object of processing, Most of the functional elements 2 1 5 are patterned in a matrix form along a direction parallel to the orientation flat 16 and a vertical direction. Then, the silicon wafer is cut for each functional element 2 1 5 as described below.  First of all, As shown in Figure 2 4 A, Adhesive protection is provided on the 3 sides of the silicon wafer 丨 to cover the functional elements 2 1 5. This protective film 丨 8 is used to protect the function -30- 200416954 energy element 2 1 5 At the same time, hold the silicon wafer 1 1 at the same time. After sticking the protective film for 18, As shown in Figure 2 4 B, Honing the silicon wafer 11 inside the silicon wafer 11 allows the silicon wafer 矽 to reach a predetermined thickness. then, The inside 17 was chemically etched to smooth the inside 17. in this way, The silicon wafer 11 having a thickness of about 350 μm is thinned to, for example, 100 μm. After the silicon wafer 11 is thinned, the protective film 18 is irradiated with ultraviolet rays. With this, Hardening the adhesive layer of the protective film 18, Furthermore, it is easy to peel off the protective film 18 from the silicon wafer 11.  then, A laser processing device is used to form a cut-off area inside the silicon wafer. that is, As shown in Figure 2 5 Α, On the platform 19 of the laser processing device, Hold the silicon wafer 1 1 with the inside 1 7 facing upwards and fix the protective film 1 8 by vacuum suction. Set the planned cutting line 5 to the adjacent functional elements in a grid pattern 2 1 5. Extend between 2 1 5 (refer to the two dotted lines in Figure 23). also, As shown in Figure 2 5B, The inside 1 7 is used as the laser light incident surface to assemble the light collection point P inside the silicon wafer 1 1. Irradiate the laser light L under the conditions that generate the above-mentioned multiphoton absorption The moving stage 19 moves the light collection point P relatively along the cut-off line 5. With this, As shown in Figure 2 5 C, A cut-off starting area 9 is formed in the silicon wafer 11 along the planned cutting line 5 by the melt processing area 13.  Lu then, Take out the silicon wafer with adhesive protection film 18 from the mounting table 19,  As shown in Figure 2 6 A, On silicon wafer 1 1 inside 1 7 Paste a film coated with double-sided adhesive resin 2 2 0 (for example, "LE-5000 (brand name)" of Japan's Lindoku Corporation. The film 2 2 0 coated with a double-sided adhesive resin has a thickness of about 100 μηι, Stretchable stretch film (grip member) 221, The stretched film 2 2 1 has a double-sided adhesive resin layer 2 2 3 having a layer thickness of several μm and a UV curing resin layer provided with a double-sided adhesive agent. that is, The double-sided-31-200416954 adhesive resin layer 2 2 3 is inserted in the middle and the stretched film 22 1 is adhered to the inside of the silicon crystal 1 1 1 17. In addition, A film stretching device 30 is provided on a peripheral portion of the stretched film 2 21. 俟 After sticking the film 220 coated with double-sided adhesive resin, As shown in Figure 2 6 B, Remove the protective film 1 8 from the 3 sides of the silicon wafer 1 1 then, As shown in Figure 2 6 C, The stretched film 2 2 1 was irradiated with ultraviolet rays. With this, Curing the UV-curable resin layer which is the adhesive layer of the stretched film 22 1, Furthermore, it is easy to peel the double-sided adhesive resin layer 2 2 3 from the stretched film 2 2 1.  then, As shown in Figure 27A, The sheet stretcher 30 stretches the stretched film 2 2 1 and stretches the peripheral edge portion of the stretched film 2 2 1 to the outside. By stretching the film 2 2 1 A crack is generated in the thickness direction with the starting point region 9 being cut off. This crack finally reaches the surface 3 and the inside 17 of the silicon wafer 11. By this', the silicon wafer 1 can be cut along the predetermined cutting line 5 with good accuracy; i, Furthermore, many semiconductor wafers 2 5 each having one functional element 2 1 5 are obtained. Again ’, Adjacent semiconductor wafers 2 5. 2 5 Cross-sections facing each other 2 5 a 、 25a is gradually separated from the tight state with the stretching of the stretched film 221, At the same time as the silicon wafer 切断 is cut, the double-sided adhesive resin layers 2 2 3 which are in close contact with the inner surface 1 7 of the silicon wafer 11 are also cut along the planned cutting line 5.  Then ’as shown in FIG. 27B, The semiconductor wafer 25 is picked up one by one using a suction collet. At this time, The double-sided adhesive resin layer 2 2 3 is cut into the same outer shape as the semiconductor wafer 25, In addition, Because the adhesion between the double-sided adhesive resin layer 2 2 3 and the stretched film 221 is reduced, The semiconductor wafer 25 is picked up in a state in which the semiconductor wafer 25 is in close contact with the cut double-sided adhesive resin layer 2 2 3. also,  As shown in Figure 27C, The semiconductor wafer 25 is placed on a die pad of a lead frame 27 through a double-sided adhesive resin layer 2 2 3 adhered to the semiconductor wafer 25, Then the material is joined by heating -32- 200416954.  The cutting method of the silicon wafer 11 described above, A sand wafer 11 having a functional element 2 1 5 formed on the surface 3 is used as a processing object. The inside 17 is used as the laser light incident surface 'to irradiate the laser beam at the collection light spot p inside the silicon wafer 1 1. With this, Multi-photon absorption is generated inside the sand wafer Π, Further, along the planned cutting line 5 ', a cut-off starting region 9 generated by the fusion processing region 13 is formed inside the silicon wafer 1 i. At this time, The reason for using the inside surface of a semiconductor substrate as the incident surface of laser light is that it is functional if the surface is used as the incident surface of laser light: It may interfere with the incidence of laser light. in this way, When the cut-off starting area 9 is formed inside the silicon wafer 11, the crack can be generated naturally or with a small force to start from the cut-off starting area 9. And this crack can be extended to the surface 3 and the inside 17 of the silicon wafer 1 1. therefore, After the cut-off point area 9 is formed, the double-sided adhesive resin layer 2 2 3 is inserted in the middle and the stretched film 2 2 1 is stuck on the silicon wafer n 1 7. then, After stretching the stretched film 2 2 1, the cut surface 2 5 of the silicon wafer 1 1 cut along the planned cutting line 5 a, 2 5 a gradually separates from the self-adhesive state as the stretched film 2 2 丨 stretches. With this, The double-sided adhesion existing between the silicon wafer 丨 and the stretched film 2 2 丨 * The junction resin layer 22 3 is also cut along the planned cutting line 5. then, Compared to the case of cutting with a blade, With excellent efficiency, The sand wafer 11 and the double-sided adhesive resin layer 22 3 are cut along the planned cutting line 5.  Moreover, the cut surface 2 5 a of the silicon wafer 丨 cut along the planned cutting line 5 丨 At the beginning of 2 5 a, they are closely connected to each other. Therefore, the shapes of the cut silicon wafers n and the cut double-sided adhesive resin layers 2 2 3 are almost the same. Therefore, Yelong prevents the double-sided adhesive resin from being extruded from the cut surface 25 a of each silicon wafer Π by -jj- 200416954.  Furthermore, the inside of the wafer 11 is honed before the cutting starting area 9 is formed inside the sand wafer 11 so that the sand wafer has a predetermined thickness. in this way,  By thinning the silicon wafer π to a predetermined thickness, The silicon wafer 1 1 and the double-sided adhesive resin layer 2 2 3 can be cut along the cut-off line 5 with better accuracy.  (Industrial possibilities) As explained above, A method for cutting a semiconductor substrate according to the present invention, The semiconductor substrate and the double-sided adhesive resin layer can be cut at the same time with good efficiency.  (V) Simple illustration of the schema:  FIG. 1 is a plan view of a semiconductor substrate during laser processing performed by the laser processing method according to this embodiment.  Fig. 2 is a sectional view taken along the line π-π of the semiconductor substrate shown in Fig. 1.  Fig. 3 is a plan view of a semiconductor substrate after laser processing performed by the laser processing method according to this embodiment.  Fig. 4 is a sectional view taken along line IV-IV of the semiconductor substrate shown in Fig. 3.  Fig. 5 is a sectional view taken along the line V-V of the semiconductor substrate shown in Fig. 3.  Fig. 6 is a plan view of a semiconductor substrate cut by a laser processing method according to this embodiment. ‘FIG. 7 is a photograph showing a cross-section of a part of a silicon wafer cut by a laser processing method according to this embodiment.  Fig. 8 is a graph showing the relationship between the wavelength of laser light -34- 200416954 on the laser processing method according to this embodiment and the transmittance inside the silicon substrate.  FIG. 9 is a schematic configuration diagram of a laser processing apparatus according to this embodiment.  Fig. 10 is a flowchart for explaining the steps of forming the planned cutting section performed by the laser processing apparatus according to this embodiment.  Figures 1 1 A and 1 1 B are schematic diagrams for explaining the cutting method of the silicon wafer related to this embodiment. Figure 1 1 A shows the state of the adhesive wafer after the silicon wafer is pasted. FIG. 11B is a view showing a state after a predetermined cut-off portion is generated in a silicon wafer by a fusion processing field.  Figures 12A and 12B are schematic diagrams for explaining the method of repairing and cutting silicon wafers related to this embodiment. Figure 1 2 A shows the state of the adhesive sheet after stretching. Fig. 12B shows a state in which the adhesive sheet is irradiated with ultraviolet rays.  Figures 1 3 A and 1 3 B are schematic diagrams for explaining the cutting method of the silicon wafer related to this embodiment. Figure 1 3 A shows the state where the double-sided adhesive resin layer and the semiconductor wafer that have been cut off are picked up at the same time. Fig. 1B shows a state where the semiconductor wafer is bonded to the lead frame through a double-sided adhesive resin layer.  Figures 14A and 14B are schematic diagrams showing the relationship between the silicon wafer and the planned cutting section in the method for cutting a silicon wafer according to this embodiment. Among them, Dilu 1 4 A shows the state where no cracks have occurred starting from cutting off the planned part.  Fig. 14B shows a state where cracks starting from the cut-out portion have reached the surface and the inside of the silicon wafer.  Figures 15 A and 15 B are schematic diagrams of the relationship between the silicon wafer on the silicon wafer cutting method and the planned cutting section in this embodiment. Among them, Figure 15A shows the state where the cracks starting from the cut-off portion reach the surface of the silicon wafer. Fig. 15B shows the state where the crack starting from the cut-out portion has reached the inside of the silicon wafer -35- 200416954.  Figures 16A and 16B are schematic diagrams for explaining an embodiment of a method for cutting a silicon wafer according to this embodiment. Figure 16A shows the state immediately after the adhesive sheet starts to stretch. Fig. 16B shows a state where the adhesive sheet is being stretched.  Figures 17A and 17B are schematic diagrams for explaining an embodiment of a method for cutting a silicon wafer according to this embodiment. Figure 17 A shows the state of the adhesive sheet after stretching. Fig. 17B shows a state when a semiconductor wafer is picked up.  _ Figure 18 is a schematic diagram illustrating another embodiment of the method for cutting a silicon wafer according to this embodiment.  -Figures 19A and 19B are other examples for explaining the cutting method of the silicon wafer related to this embodiment. There is no crack that starts with cutting off the planned part, Figure 19A shows the state after the planned cutting section is formed by the melt processing area. Figure 19B shows the state after the adhesive sheet is stretched.  Figures 20A and 20B are used to explain other embodiments of the cutting method of the silicon wafer related to this embodiment, and the situation where a crack starting from the cutting predetermined portion reaches the surface and the inside of the silicon ® wafer, FIG. 20A shows the state after the planned cut-off portion is formed by the melting processing area. Fig. 20B shows the state after the adhesive sheet is stretched.  Figures 2 1 A and 2 1 B are used to explain the other embodiments of the cutting method of the silicon wafer related to this embodiment, and the situation in which a crack starting from the cutting predetermined portion reaches the surface of the silicon wafer, Figure 2A shows the state after the planned cutting section is formed by the melt processing area. Figure 2 1 B shows the state after the adhesive sheet is stretched -36- 200416954.  22A and 22B are diagrams for explaining a method for cutting a silicon wafer according to this embodiment. In other embodiments, a crack that reaches a predetermined portion as a starting point reaches a silicon wafer. Figure 22A shows the state after the cut-off portion is formed by the melt processing area. Fig. 22B shows the state after the adhesive sheet is stretched.  FIG. 23 shows a method for cutting a semiconductor substrate according to this embodiment. A plan view of a silicon wafer as a processing object.  Figures 24A to 24C are schematic diagrams for explaining the method for cutting the semiconductor substrate in this embodiment. Figure 24A shows the state where the protective film is adhered to the silicon wafer. FIG. 24B shows a state where the silicon wafer is thinned. Fig. 24C shows a state where the protective film is irradiated with ultraviolet rays.  Figures 2 5 A to 2 5 C are schematic diagrams for explaining the cutting method of the semiconductor substrate in this embodiment. Figure 2 5 A shows the state where the silicon wafer and the protective film are fixed on the mounting table. Figure 2 5B shows the state of the silicon wafer illuminated by laser light. Fig. 2C shows the state where the starting point of the cut is formed inside the silicon wafer.  Figures 2 6 A to 2 6 C are schematic diagrams for explaining the method for cutting the semiconductor substrate in this embodiment. Figure 26A shows a state where a thin film coated with a double-sided adhesive resin is stuck on a silicon wafer. Figure 2 6B shows the state where the protective film is peeled from the silicon wafer. Fig. 26C shows a state where the stretched film is irradiated with ultraviolet rays.  Figures 2 7 A to 2 7 C are schematic diagrams for explaining the cutting method of the semiconductor substrate in this embodiment. Figure 2 7 A shows the state of the stretched film after stretching -37- 200416954, FIG. 27B shows a state in which the cut double-sided adhesive resin layer and the semiconductor wafer are picked up at the same time. Fig. 27C shows a state in which the semiconductor wafer is bonded to the lead frame via a double-sided adhesive resin layer.  Description of the main symbols:  1 Semiconductor substrate 3 Surface 5 Cut-off line 7 Modification area 9 Cut-off portion 11 Sand wafer 13 Melt processing area 17 Inside of silicon wafer 18 Protective film 2 0 Adhesive sheet 2 1 Substrate 22 UV-curable resin layer 23 Double-sided adhesive resin layer 25 Semiconductor wafer 25a Cut surface of semiconductor wafer 30 Sheet stretching device 10 0 Laser processing device 1 0 1 Laser light source 102 Laser light source control unit 103 Dichroic mirror

-38- 200416954 1 05 集光用透鏡 1 07 載置台 109 X軸台 111 Y軸台 113 Z軸台 115 台控制部 119 光束分離器 12 1 攝影元件 123 結像透鏡 125 攝影資料處理部 127 整體控制部 129 監視器 2 15 功能元件-38- 200416954 1 05 Lens for collecting light 1 07 Mounting stage 109 X-axis stage 111 Y-axis stage 113 Z-axis stage 115 Stage control unit 119 Beam splitter 12 1 Photographic element 123 Image-forming lens 125 Photographic data processing unit 127 Overall control 129 monitors 2 15 functional elements

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Claims (1)

200416954 拾、申請專利範圍·· !. 一種半導體基板之切斷方法，其特徵爲包括下述作業： 在經藉由雙面黏結樹脂層而被黏貼薄片之半導體基板 之內部對合集光點照射雷射光，藉此在前述半導體基板 之內部形成因多光子吸收所產生之改質領域，藉該改質 領域形成切斷預定部；及 在形成前述切斷預定部後，藉由使前述薄片伸展，沿 著前述切斷預定部切斷前述半導體基板及前述雙面黏結 樹脂層。 0 2 · —種半導體基板之切斷方法，其特徵爲包括下述作業： 在經藉由雙面黏結樹脂層而被黏貼薄片之半導體基板 之內部對合集光點，以集光點之尖峰功率密度爲1 X 1 〇8 (W/cm2)以上且脈衝寬爲1μ3以下之條件照射雷射光，藉 此，在前述半導體基板內部形成含有熔融處理領域之改 質領域，藉含有該熔融處理領域之改質領域形成切斷預 定部；及 在形成前述切斷預定部後，藉由使前述薄片伸展，沿 春 著前述切斷預定部切斷前述半導體基板及前述雙面黏結 樹脂層。 3 · —種半導體基板之切斷方法，其特徵爲包括下述作業： 在經藉由雙面黏結樹脂層而被黏貼薄片之半導體基板 內部對合集光點照射雷射光，在前述半導體基板之內部 形成改質領域’藉該改質領域形成切斷預定部；及 在形成則述切斷預定邰後，藉由使前述薄片伸展，沿 -40- 200416954 著前述切斷預定部切斷前述半導體基板及前述雙面黏結 樹脂層。 4 . 一種半導體基板之切斷方法，其特徵爲包括下述作業： 在被黏貼薄片之半導體基板之內部對合集光點照射雷 射光，在前述半導體基板內部形成改質領域，藉該改質 領域形成切斷預定部；及 在形成前述切斷預定部後，藉由使前述薄片伸展，沿 著切斷預定部切斷前述半導體基板。 5 ·如申請專利範圍第3項或第4項之半導體基板之切斷方 鲁 法，其中前述改質領域係熔融處理後之領域。 6 ·如申請專利範圍第1〜4項中任一項之半導體基板之切 斷方法，其中在前述切斷預定部之形成作業，係以前述 切斷預定部爲起點，使龜裂延伸到達半導體基板之雷射 光入射側之表面。 7 ·如申請專利範圍第1〜4項中任一項之半導體基板之切 斷方法，其中在前述切斷預定部之形成作業，係以前述 切斷預定部爲起點，使龜裂延伸到達與前述半導體基板鲁 之雷射光入射側之表面相反之側之裏面。 8 ·如申請專利範圍第1〜4項中任一項之半導體基板之切 斷方法，其中在前述之切斷預定部之形成作業，係以前 述切斷預定部爲起點，使龜裂延伸到達半導體基板之雷 射光入射側之表面和其之相反側之裏面。 9 · 一種半導體基板之切斷方法，其特徵爲包括下述作業： 在經藉由雙面黏結樹脂層而被黏著薄片之半導體基板 -41- 200416954 內部對合集光點照射雷射光，藉此在前述半導體基板內 部形成藉多光子吸收所產生之改質領域，藉該改質領域 形成切斷預定部； 在形成前述切斷預定部後，藉由沿著前述切斷預定部 使前述半導體基板產生應力，沿著前述切斷預定部切斷 前述半導體基板；及 在切斷前述半導體基板後，藉由使前述薄片伸展，沿 著前述半導體基板之切斷面切斷前述雙面黏結樹脂層。 1 〇. —種半導體基板之切斷方法，其特徵爲包括下述作業： 鲁 在經藉由雙面黏結樹脂層而被黏貼薄片之半導體基板 內部，對合集光點，以集光點上之尖峰功率密度爲1 X 1 〇8 (W/cm2)以脈衝寬爲1μ5以下之條件照射雷射光，藉此， 在前述半導體基板內部形成含有溶融處理領域之改質領 域，藉含有該熔融處理領域之改質領域形成切斷預定部； 在形成前述切斷預定部後，藉由沿著前述切斷預定部 ，使前述半導體基板產生應力，沿著前述切斷預定部切 斷前述半導體基板；及 _ 在切斷削述半導體基板後，藉由使前述薄片伸展，沿 著前述半導體基板之切斷面切斷前述雙面黏結樹脂層。 1 1 . 一種半導體基板之切斷方法，其特徵爲包括下述作業： 在經藉由雙面黏結樹脂層而被黏貼薄片之半導體基板 內部對合集光點照射雷射光，在前述半導體基板內部形 成改質領域，藉該改質領域形成切斷預定部； 在形成前述切斷預定部後，藉由使沿著前述切斷預定 -42- 200416954 部在半導體基板上產生應力，沿著前述切斷預定部切斷 前述半導體基板；及 在切斷目u述半導體基板後’藉由使即述薄片伸展，沿 著前述半導體基板之切斷面切斷前述雙面黏結樹脂層。 1 2 .如申請專利範圍第1 1項之半導體基板之切斷方法，其中 前述改質領域係爲經熔融處理後之領域。 1 3 · —種半導體基板之切斷方法，其係一種沿著切斷預定線 切斷表面上形成有功能元件之半導體基板之切斷方法， 其特徵爲包括下述作業： φ 將則述半導體基板之裏面作爲雷射光入射面，在前述 半導體基板之內部對合集光點照射雷射光，藉以形成改 質領域，藉此改質領域，沿著前述切斷預定線在距前述 雷射光入射面既定距離之內側形成切斷起點領域； 在形成前述切斷起點領域後，藉由雙面黏結樹脂層將 能伸展之把持構件裝著於前述半導體基板之裏面；及 在裝著前述把持構件後，使前述把持構件伸展，沿著 前述切斷預定線切斷前述半導體基板及前述雙面黏結樹 鲁 脂層。 1 4 ·如申請專利範圍第1 3項之半導體基板之切斷方法，其中 具備有在形成前述切斷起點領域前，硏磨前述半導體基 板之裏面俾使前述半導體基板達到既定之厚度之作業。 1 5 ·如申請專利範圍第1 3項或第1 4項之半導體基板之切斷 方法，其中前述改質領域係含有熔融處理領域。 1 6 .如申請專利範圍第1 3〜1 5項中任一項之半導體基板之 -43- 200416954 切斷方法，其中在形成前述切斷起點領域之際， 述切斷起點領域爲起點，使龜裂延伸到達前述半 板之表面。 1 7 .如申請專利範圍第1 3〜1 5項中任一項之半導體 切斷方法，其中在形成前述切斷起點領域之際， 述切斷起點領域爲起點，使龜裂延伸到達前述半 板之裏面。 1 8 .如申請專利範圍第1 3〜1 5項中任一項之半導體 切斷方法，其中在形成前述切斷起點領域之際， 述切斷起點領域爲起點，使龜裂延伸到達前述半 板之表面和裏面。 係以前 導體基 基板之 係以前 導體基 基板之 係以前 導體基 -44-200416954 Patent application scope ... A method for cutting a semiconductor substrate is characterized in that it includes the following operations: illuminating a collection light spot on the inside of a semiconductor substrate that has been pasted with a thin sheet through a double-sided adhesive resin layer Radiate light, thereby forming a reformed area due to multiphoton absorption inside the semiconductor substrate, and forming a planned cutting section by the modified field; and after forming the planned cutting section, by stretching the sheet, The semiconductor substrate and the double-sided adhesive resin layer are cut along the predetermined cutting section. 0 2 · A method for cutting a semiconductor substrate, which is characterized in that it includes the following operations: Integrating light-gathering points on the inside of a semiconductor substrate that is pasted by a double-sided adhesive resin layer, and using the peak power of the light-gathering points Laser light is irradiated under the conditions of a density of 1 X 1 〇8 (W / cm2) and a pulse width of 1 μ3 or less, thereby forming a reformed field containing a melt processing field inside the semiconductor substrate. The modified area is formed with a planned cutting section; and after forming the planned cutting section, the sheet is stretched to cut the semiconductor substrate and the double-sided adhesive resin layer along the planned cutting section along the spring. 3. A method for cutting a semiconductor substrate, which includes the following operations: irradiating laser beams to a collection light spot inside a semiconductor substrate to which a sheet is pasted by a double-sided adhesive resin layer, and inside the semiconductor substrate Forming a reformed area 'forms a planned cutting section by the modified field; and after forming the planned cutting section, the sheet is stretched to cut the semiconductor substrate along the planned cutting section along -40-200416954. And the aforementioned double-sided adhesive resin layer. 4. A method for cutting a semiconductor substrate, comprising the following operations: irradiating a laser beam with a light collection spot on the inside of the semiconductor substrate to which the sheet is pasted, forming a reformed field inside the semiconductor substrate, and using the reformed field Forming a planned cutting section; and cutting the semiconductor substrate along the planned cutting section by stretching the sheet after forming the planned cutting section. 5 · If the method of cutting a semiconductor substrate according to item 3 or 4 of the scope of patent application, the aforementioned modification field is the field after the melting process. 6. The method for cutting a semiconductor substrate according to any one of claims 1 to 4, wherein the forming operation of the planned cutting section is based on the planned cutting section as a starting point, so that the crack extends to the semiconductor. The surface of the laser light incident side of the substrate. 7. The method for cutting a semiconductor substrate according to any one of claims 1 to 4 in the scope of patent application, wherein the forming operation of the planned cutting section is based on the planned cutting section as a starting point, so that the crack extends to reach The semiconductor substrate Lu Zhi is on the opposite side to the surface on which the laser light is incident. 8 · The method for cutting a semiconductor substrate according to any one of claims 1 to 4 in the patent application scope, wherein the forming operation of the aforementioned planned cutting section is based on the aforementioned planned cutting section as a starting point so that the crack extends to reach The surface of the laser light incident side of the semiconductor substrate and the inside of the opposite side thereof. 9 · A method for cutting a semiconductor substrate, comprising the following operations: irradiating laser light to a collection light spot inside a semiconductor substrate-41- 200416954 which is adhered to a sheet by a double-sided adhesive resin layer, and thereby A modified area generated by multi-photon absorption is formed inside the semiconductor substrate, and the planned cutting section is formed by the modified field; after the planned cutting section is formed, the semiconductor substrate is generated along the planned cutting section. Stress, cutting the semiconductor substrate along the planned cutting section; and cutting the semiconductor substrate, and then stretching the sheet to cut the double-sided adhesive resin layer along the cut surface of the semiconductor substrate. 1 〇. A method for cutting a semiconductor substrate, which is characterized in that it includes the following operations: Lu Zaijing aligns the light collection points on the inside of the semiconductor substrate to which the sheet is pasted by double-sided bonding of the resin layer. The peak power density is 1 X 10 (W / cm2), and laser light is irradiated under the condition that the pulse width is 1 μ5 or less, thereby forming a reformed field containing a melt processing field inside the semiconductor substrate, and including the melt processing field. The modified area is formed with a planned cutting section; after forming the planned cutting section, stress is applied to the semiconductor substrate along the planned cutting section, and the semiconductor substrate is cut along the planned cutting section; and _ After cutting the semiconductor substrate, the double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate by stretching the sheet. 1 1. A method for cutting a semiconductor substrate, comprising the following operations: irradiating a laser beam with a light collection spot on a semiconductor substrate to which a sheet is pasted by a double-sided adhesive resin layer, and forming the semiconductor substrate inside the semiconductor substrate; In the reforming field, the planned cutting section is formed by the reformed field; after forming the planned cutting section, a stress is generated on the semiconductor substrate along the planned cutting section -42-200416954, and the cutting is performed along the cutting section. The predetermined section cuts the semiconductor substrate; and after cutting the semiconductor substrate, the double-sided adhesive resin layer is cut along the cut surface of the semiconductor substrate by stretching the sheet. 1 2. The method for cutting a semiconductor substrate according to item 11 of the scope of patent application, wherein the aforementioned modified field is a field after being melt-processed. 1 3-A method for cutting a semiconductor substrate, which is a method for cutting a semiconductor substrate having a functional element formed on a surface along a predetermined cutting line, which is characterized by the following operations: φ will describe the semiconductor The inside of the substrate is used as a laser light incident surface, and laser light is irradiated to the collection light spot inside the semiconductor substrate to form a modified field. The modified field is thus determined along the predetermined cutting line at a predetermined distance from the laser light incident surface. Inside the distance, a cutting starting area is formed; after forming the cutting starting area, a stretchable holding member is mounted inside the semiconductor substrate through a double-sided adhesive resin layer; and after the holding member is mounted, The holding member is extended, and the semiconductor substrate and the double-sided adhesive resin layer are cut along the predetermined cutting line. 14 · The method for cutting a semiconductor substrate according to item 13 of the scope of patent application, which includes the operation of honing the inside of the semiconductor substrate to form the semiconductor substrate to a predetermined thickness before forming the cutting starting area. 1 5 · If the method for cutting a semiconductor substrate according to item 13 or item 14 of the scope of patent application, the aforementioned modification field includes a melting process field. 16. The cutting method of -43-200416954 for a semiconductor substrate according to any one of claims 1 to 15 in the scope of application for a patent, wherein the cutting starting area is used as a starting point when the cutting starting area is formed. The crack extends to the surface of the aforementioned half plate. 17. The semiconductor cutting method according to any one of claims 13 to 15 in the scope of application for a patent, wherein when the starting point area for cutting is formed, the starting point area for cutting is used as a starting point so that the crack extends to the aforementioned half. Inside the board. 18. The semiconductor cutting method according to any one of claims 13 to 15 in the scope of the patent application, wherein when the starting point area for cutting is formed, the starting point area for cutting is used as a starting point so that the crack extends to the aforementioned half. The surface and inside of the board. Former Conductor-based Substrate Formerly Conductor-based Substrate Formerly Conductor-44-
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