JP2000349107A - Manufacture of semiconductor sealing chip module and its fixing sheet - Google Patents

Manufacture of semiconductor sealing chip module and its fixing sheet

Info

Publication number
JP2000349107A
JP2000349107A JP11162070A JP16207099A JP2000349107A JP 2000349107 A JP2000349107 A JP 2000349107A JP 11162070 A JP11162070 A JP 11162070A JP 16207099 A JP16207099 A JP 16207099A JP 2000349107 A JP2000349107 A JP 2000349107A
Authority
JP
Japan
Prior art keywords
adhesive layer
semiconductor
sealing
chip module
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11162070A
Other languages
Japanese (ja)
Inventor
Kazuyuki Kiuchi
一之 木内
Toshiyuki Oshima
俊幸 大島
Shuto Murata
秋桐 村田
Yukio Arimitsu
幸生 有満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP11162070A priority Critical patent/JP2000349107A/en
Publication of JP2000349107A publication Critical patent/JP2000349107A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor sealing chip module in a stable and efficient manner by an adhesive fixing system through sealing resin surface. SOLUTION: After a semiconductor sealing chip module 2, which is formed by collectively resin sealing a plurality of chip module unit continuous bodies, has been cut into semiconductor chip module units 4 by adhesively fixing using a fixing sheet 1 with a silicon adhesive layer 12 containing thermal expansion microscopic globe through a sealing resin surface 21, an adhesive force lowering treatment is performed by expanding the thermal expansion microscopic globe by heating the adhesive layer, the semiconductor sealing chip module is recovered from the heat-treated adhesive layer in this manufacturing method, the adhesive layer, to be adhered to the sealing resin surface of the semiconductor sealing module provided at least on one side of substrate, and the semiconductor sealing module fixing sheet, consisting of silicon adhesive layer containing the thermal expansion microscopic globes, is formed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の技術分野】本発明は、複数のチップモジュール
単位の一括樹脂封止体よりそれを切断して封止チップモ
ジュールを効率よく得ることができる製造方法、及びそ
の切断時の固定シートに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing method capable of efficiently obtaining a sealed chip module by cutting a packaged resin sealed body of a plurality of chip modules, and a fixing sheet at the time of cutting.

【0002】[0002]

【発明の背景】半導体封止チップモジュールの小型化等
に伴い、それを個々に樹脂封止して形成するのでは製造
効率や歩留まりに劣ることから、複数のチップモジュー
ル単位の連続体を一括に樹脂封止した後それを個々の封
止チップモジュール単位に切断して目的のチップモジュ
ールを得る方法が検討されている。しかしモジュールを
切断する際の固定手段に従来方式の適用が困難であり、
かかる製造方法が確立されていない現状である。
BACKGROUND OF THE INVENTION With the miniaturization of semiconductor-encapsulated chip modules and the like, it is inferior in manufacturing efficiency and yield if individually formed by resin encapsulation. A method for obtaining a target chip module by resin sealing and then cutting it into individual sealed chip module units has been studied. However, it is difficult to apply the conventional method to the fixing means when cutting the module,
At present, such a manufacturing method has not been established.

【0003】すなわち、前記の封止樹脂には金型よりの
離型を目的にシリコーン系等のワックスからなる離型剤
が配合されており、従来の半導体ウエハ固定用の熱膨張
性微小球含有型粘着層を有する固定材では、封止樹脂面
を介して接着固定する方式では切断時に必要な接着固定
力が発現せず、その封止樹脂面とは反対側の基板側を介
して接着固定する方式では、基板に設けた配線パターン
やバンプやランド等の金属部品が粘着層の成分を介して
腐食や絶縁を誘発しやすい難点があるためである。
[0003] That is, the above-mentioned sealing resin is mixed with a release agent made of a silicone-based wax or the like for the purpose of releasing from a mold, and contains a conventional heat-expandable microsphere for fixing a semiconductor wafer. In the case of a fixing material having a mold adhesive layer, the method of bonding and fixing via the sealing resin surface does not exhibit the necessary adhesive fixing force at the time of cutting, and is bonded and fixed via the substrate side opposite to the sealing resin surface This is because such a method has a problem in that a metal component such as a wiring pattern, a bump, or a land provided on a substrate is likely to induce corrosion or insulation via a component of an adhesive layer.

【0004】[0004]

【発明の技術的課題】本発明は、封止樹脂面を介した接
着固定方式にて上記の製造方法を適用して半導体封止チ
ップモジュールを安定に効率よく得ることができる方法
の開発を課題とする。
SUMMARY OF THE INVENTION An object of the present invention is to develop a method for stably and efficiently obtaining a semiconductor encapsulated chip module by applying the above-mentioned manufacturing method by an adhesive fixing method via a sealing resin surface. And

【0005】[0005]

【課題の解決手段】本発明は、複数のチップモジュール
単位の連続体を一括に樹脂封止してなる半導体封止モジ
ュールをその封止樹脂面を介し、熱膨張性微小球含有の
シリコーン系粘着層を有する固定シートで接着固定して
半導体封止チップモジュール単位に切断した後、その粘
着層を加熱し含有の熱膨張性微小球を膨張させて接着力
の低減処理を施し前記の半導体封止チップモジュールを
当該加熱処理後の粘着層より回収することを特徴とする
半導体封止チップモジュールの製造方法、及び樹脂封止
した半導体封止モジュールの封止樹脂面と接着される粘
着層を基材の少なくとも片側に有してなり、その粘着層
が熱膨張性微小球を含有するシリコーン系粘着層からな
ることを特徴とする半導体封止モジュール固定シートを
提供するものである。
According to the present invention, there is provided a semiconductor sealing module comprising a plurality of chip module units continuously resin-sealed together through a sealing resin surface, and a silicone-based adhesive containing heat-expandable microspheres. After bonding and fixing with a fixing sheet having a layer and cutting into semiconductor sealing chip module units, the adhesive layer is heated to expand the contained heat-expandable microspheres, and a treatment for reducing the adhesive force is performed, and the semiconductor sealing is performed. A method for manufacturing a semiconductor-encapsulated chip module, wherein the chip module is recovered from the adhesive layer after the heat treatment, and an adhesive layer adhered to a sealing resin surface of the semiconductor-encapsulated module sealed with resin. Wherein the adhesive layer is formed of a silicone-based adhesive layer containing heat-expandable microspheres. .

【0006】[0006]

【発明の効果】本発明によれば、シリコーン系粘着層を
介し半導体モジュールを封止する離型剤含有の樹脂面を
切断に必要な固定力以上の接着力にて固定でき、切断後
は含有の熱膨張性微小球の加熱膨張による接着力の低減
で、切断形成した半導体封止チップモジュールを粘着層
より容易に回収することができる。
According to the present invention, the resin surface containing the release agent for sealing the semiconductor module via the silicone-based adhesive layer can be fixed with an adhesive force higher than the fixing force required for cutting. By reducing the adhesive force due to the thermal expansion of the heat-expandable microspheres, the cut and formed semiconductor encapsulation chip module can be easily collected from the adhesive layer.

【0007】前記の結果、複数のチップモジュール単位
の連続体を一括樹脂封止しそれを切断して個々の封止チ
ップモジュールを製造効率よく得ることができ、一括封
止方式による歩留まりの向上、また封止樹脂面接着固定
方式に基づき基板と粘着層との接触を回避して金属部品
の酸化や導通不良等の電気特性不良の発生防止による歩
留まりの向上を図ることができる。さらに充分な接着固
定力の発現にて封止樹脂や離型剤についても幅広く選択
することができる。
As a result, a continuous body of a plurality of chip modules can be collectively resin-sealed and cut to obtain individual sealed chip modules with high manufacturing efficiency. Further, the contact between the substrate and the adhesive layer can be avoided based on the sealing resin surface adhesive fixing method, and the yield can be improved by preventing the occurrence of electrical characteristic defects such as oxidation and conduction failure of the metal parts. Further, the sealing resin and the release agent can be widely selected by expressing sufficient adhesive fixing force.

【0008】[0008]

【発明の実施形態】本発明の製造方法は、複数のチップ
モジュール単位の連続体を一括に樹脂封止してなる半導
体封止モジュールをその封止樹脂面を介し、熱膨張性微
小球含有のシリコーン系粘着層を有する固定シートで接
着固定して半導体封止チップモジュール単位に切断した
後、その粘着層を加熱し含有の熱膨張性微小球を膨張さ
せて接着力の低減処理を施し前記の半導体封止チップモ
ジュールを当該加熱処理後の粘着層より回収して半導体
封止チップモジュールを得るものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The manufacturing method of the present invention is to provide a method of manufacturing a semiconductor module comprising a plurality of chip module units, which are packaged together with a resin. After adhesively fixing with a fixing sheet having a silicone-based adhesive layer and cutting into semiconductor encapsulation chip module units, the adhesive layer is heated to expand the contained heat-expandable microspheres and subjected to a treatment for reducing the adhesive force, and the above-mentioned treatment is performed. The semiconductor encapsulating chip module is obtained by collecting the semiconductor encapsulating chip module from the adhesive layer after the heat treatment.

【0009】前記の本発明による方法の製造工程例を図
1(a)、(b)に示した。1が固定シートで、12が
その熱膨張性微小球含有のシリコーン系粘着層、2が複
数のチップモジュール単位の連続体を一括に樹脂封止し
てなる半導体封止モジュールで、21がその封止樹脂、
3が切断線、13が加熱処理後の粘着層、4が切断形成
した半導体封止チップモジュールである。なお22は半
導体チップ、23は基板である。
FIGS. 1 (a) and 1 (b) show an example of the manufacturing process of the method according to the present invention. 1 is a fixing sheet, 12 is a silicone-based pressure-sensitive adhesive layer containing the heat-expandable microspheres, 2 is a semiconductor sealing module in which a continuous body of a plurality of chip modules is collectively resin-sealed, and 21 is a sealing module. Resin,
Reference numeral 3 denotes a cutting line, reference numeral 13 denotes a heat-treated adhesive layer, and reference numeral 4 denotes a cut-formed semiconductor sealing chip module. 22 is a semiconductor chip and 23 is a substrate.

【0010】本発明においては、図1(a)に例示の如
く半導体封止モジュール2をその封止樹脂面21を介
し、固定シート1が具備する熱膨張性微小球含有のシリ
コーン系粘着層12にて接着固定した状態でその半導体
封止モジュールを半導体封止チップモジュール単位に切
断する。
In the present invention, as shown in FIG. 1 (a), a semiconductor sealing module 2 is provided with a heat-expandable microsphere-containing silicone adhesive layer 12 provided on a fixing sheet 1 via a sealing resin surface 21 thereof. The semiconductor encapsulation module is cut into semiconductor encapsulation chip module units in a state where the semiconductor encapsulation is fixed.

【0011】前記の固定シート、すなわち半導体封止モ
ジュール固定シートとしては、図1(a)に例示の如く
半導体封止モジュール2の封止樹脂面21と接着され
る、熱膨張性微小球含有のシリコーン系粘着層12を基
材11の少なくとも片側に有するものが用いられる。
As the fixing sheet, that is, the fixing sheet for the semiconductor sealing module, as shown in FIG. 1A, the sheet containing the heat-expandable microspheres adhered to the sealing resin surface 21 of the semiconductor sealing module 2. One having the silicone-based adhesive layer 12 on at least one side of the substrate 11 is used.

【0012】前記のシリコーン系粘着層は、加熱により
含有の熱膨張性微小球を膨張させて接着力の低減処理を
施すことにより、図1(b)に例示の如く凹凸変形した
粘着層13となり、その凹凸変形を介し切断形成した半
導体封止チップモジュール4に対する接着力を低減する
ものである。従って半導体封止モジュールを封止チップ
モジュール単位に切断した後の任意な時にそれと接着す
る固定シートの粘着層を加熱処理して、形成した半導体
封止チップモジュール4を固定シートより簡単に分離回
収することを可能とするものである。
The above-mentioned silicone-based pressure-sensitive adhesive layer is formed into a pressure-sensitive adhesive layer 13 which is unevenly deformed as shown in FIG. The adhesive force to the semiconductor sealing chip module 4 cut and formed through the unevenness is reduced. Therefore, the adhesive layer of the fixing sheet adhered to the semiconductor sealing module at any time after cutting the semiconductor sealing module into sealing chip module units is heat-treated, and the formed semiconductor sealing chip module 4 is easily separated and collected from the fixing sheet. It is possible to do that.

【0013】シリコーン系粘着層は、例えばシリコーン
系粘着剤と熱膨張性微小球の混合層などとして形成する
ことができる。シリコーン系粘着剤としては、例えばジ
メチルシロキサン、あるいはそのメチル基の一部をフェ
ニル基で置換したものなどを主体とする付加反応型や過
酸化物硬化型などの適宜なものを用いることができ、特
に限定はない。従って例えばSD4560やSD457
0(商品名、東レ・ダウコーニングシリコーン社製)な
どの公知のシリコーン系粘着剤のいずれも用いうる。
The silicone adhesive layer can be formed, for example, as a mixed layer of a silicone adhesive and heat-expandable microspheres. As the silicone-based pressure-sensitive adhesive, for example, an appropriate one such as dimethylsiloxane, or an addition-reaction type or a peroxide-curable type mainly containing, for example, a compound in which a part of the methyl group is substituted with a phenyl group can be used. There is no particular limitation. Therefore, for example, SD4560 and SD457
0 (trade name, manufactured by Dow Corning Toray Silicone Co., Ltd.) can be used.

【0014】加熱による上記した凹凸変形性、ひいては
接着力の低減性などの点より好ましく用いうるシリコー
ン系粘着剤は、含有の熱膨張性微小球の加熱処理温度近
傍で1500%以下、就中1000%以下、特に10〜
800%の歪み(変形)を示す粘着層を形成しうるもの
である。
The silicone-based pressure-sensitive adhesive that can be preferably used from the viewpoint of the above-mentioned unevenness deformability by heating and, consequently, the reduction of adhesive strength is 1500% or less, especially 1000%, near the heat treatment temperature of the contained heat-expandable microspheres. % Or less, especially 10 to 10%
It can form an adhesive layer showing 800% strain (deformation).

【0015】一方、粘着層に配合する熱膨張性微小球と
しては、例えばイソブタンやプロパン、ペンタンの如く
容易にガス化して熱膨張性を示す適宜な物質をコアセル
ベーション法や界面重合法等の適宜な方式にて殻形成物
質、例えば塩化ビニリデン−アクリロニトリル共重合体
やポリビニルアルコール、ポリビニルブチラールやポリ
メチルメタクリレート、ポリアクリロニトリルやポリ塩
化ビニリデン、ポリスルホンの如き熱溶融性物質や熱膨
張で破壊する物質などからなる殻の内部に内包させたマ
イクロカプセルなどがあげられる。かかる熱膨張性微小
球には、例えばマイクロスフェア(商品名、松本油脂製
薬社製)などの市販物もある。
On the other hand, as the heat-expandable microspheres to be blended in the adhesive layer, for example, a suitable substance which easily gasifies and exhibits a heat-expandability, such as isobutane, propane or pentane, is subjected to a coacervation method or an interfacial polymerization method. Shell-forming substances in a suitable manner, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, heat-fusible substances such as polysulfone, and substances that break down by thermal expansion. And microcapsules contained inside a shell made of. Such thermally expandable microspheres also include commercially available products such as microspheres (trade name, manufactured by Matsumoto Yushi Seiyaku Co., Ltd.).

【0016】熱膨張性微小球(マイクロカプセル)の使
用により加熱による接着力の低減を安定に行うことがで
きる。マイクロカプセル化されていない発泡剤等では、
良好な剥離性を安定して達成することができない。加熱
による接着力低減の操作性、就中その接着力低減の安定
した達成性などの点よりは、破裂するまでの体積膨張が
5倍以上、就中7倍以上、特に10倍以上の熱膨張性微
小球が好ましく用いられる。
By using the heat-expandable microspheres (microcapsules), the adhesive force can be stably reduced by heating. For foaming agents that are not microencapsulated,
Good releasability cannot be stably achieved. From the viewpoint of the operability of reducing the adhesive force by heating, and particularly the stable achievement of the reduction of the adhesive force, the thermal expansion of the volume expansion before rupture is 5 times or more, especially 7 times or more, especially 10 times or more. Sexual microspheres are preferably used.

【0017】熱膨張性微小球の使用量は、粘着層の膨張
倍率や接着力の低減性などにより適宜に決定してよい。
一般には、シリコーン系ポリマー100重量部あたり、
1〜150重量部、就中10〜130重量部、特に25
〜100重量部の熱膨張性微小球が用いられる。なお用
いる熱膨張性微小球の平均粒径は、100μm以下、就
中80μm以下、特に1〜50μmが一般的であるが、こ
れに限定されない。
The amount of the heat-expandable microspheres may be appropriately determined depending on factors such as the expansion ratio of the pressure-sensitive adhesive layer and the ability to reduce the adhesive strength.
Generally, per 100 parts by weight of the silicone polymer,
1 to 150 parts by weight, preferably 10 to 130 parts by weight, especially 25
100100 parts by weight of thermally expandable microspheres are used. The average particle diameter of the heat-expandable microspheres used is generally 100 μm or less, particularly 80 μm or less, and particularly 1 to 50 μm, but is not limited thereto.

【0018】シリコーン系粘着層を支持する基材として
は、例えばプラスチックフィルムや紙、布や不織布、ゴ
ムシートや発泡シート、金属箔やそれらのラミネート体
等の適宜な薄葉体を用いうる。就中、粘着層の加熱処理
温度で溶融しない耐熱性に優れるものが加熱後の取扱性
などの点より好ましい。また基材は、延伸処理等により
伸び率などの変形性を制御したものなどであってもよ
い。
As the substrate for supporting the silicone-based pressure-sensitive adhesive layer, for example, an appropriate thin leaf such as a plastic film, paper, cloth or nonwoven fabric, a rubber sheet, a foamed sheet, a metal foil, or a laminate thereof can be used. Among them, those having excellent heat resistance that do not melt at the heat treatment temperature of the adhesive layer are preferable from the viewpoint of handling properties after heating. Further, the substrate may be one in which deformability such as elongation is controlled by a stretching treatment or the like.

【0019】基材の厚さは、強度や柔軟性などに応じて
適宜に決定でき、一般には500μm以下、就中1〜3
00μm、特に5〜250μmとされるが、これに限定さ
れない。
The thickness of the substrate can be appropriately determined according to the strength, flexibility and the like, and is generally 500 μm or less, and especially 1 to 3 μm.
The thickness is set to 00 μm, particularly 5 to 250 μm, but is not limited thereto.

【0020】基材へのシリコーン系粘着層の付設は、例
えば熱膨張性微小球を配合したシリコーン系粘着剤の液
を流延方式や塗工方式等の適宜な展開方式で基材上に付
設する方式、あるいはそれに準じセパレータ上に粘着層
を形成してそれを基材上に移着する方式などの適宜な方
式にて行うことができる。
The silicone-based pressure-sensitive adhesive layer is attached to the substrate by, for example, applying a liquid of a silicone-based pressure-sensitive adhesive containing heat-expandable microspheres to the substrate by an appropriate development method such as a casting method or a coating method. Or an appropriate method such as a method of forming an adhesive layer on a separator and transferring it to a substrate in accordance with the method.

【0021】粘着層の形成に際しては、接着力の調節等
の適宜な目的で必要に応じ、例えば熱膨張性微小球の加
熱膨張を許容するポリマー類やワックス類、アクリル系
やゴム系等の他種粘着剤などの適宜なものを配合するこ
ともできる。
In forming the pressure-sensitive adhesive layer, if necessary, for appropriate purposes such as adjustment of adhesive strength, for example, polymers and waxes that allow heat expansion of the heat-expandable microspheres, acrylic and rubber-based materials, etc. An appropriate material such as a seed pressure-sensitive adhesive can also be blended.

【0022】シリコーン系粘着層の厚さは、接着力やそ
の加熱低減性などにより適宜に決定しうる。一般には、
厚さが薄過ぎると加熱による凹凸変形不足で接着力の低
減が不充分となりやすく、厚過ぎると加熱時に凝集破壊
が生じて封止チップモジュールに糊残りが生じやすいこ
となどより5〜500μm、就中10〜400μm、特に
20〜300μmの厚さとされる。
[0022] The thickness of the silicone-based pressure-sensitive adhesive layer can be appropriately determined depending on the adhesive strength and the heat reducing property. Generally,
If the thickness is too thin, the adhesive force is likely to be insufficiently reduced due to insufficient uneven deformation due to heating, and if the thickness is too thick, cohesive failure occurs during heating and adhesive residue is likely to occur on the sealing chip module. It has a thickness of 10 to 400 μm, especially 20 to 300 μm.

【0023】本発明による半導体封止モジュール固定シ
ートは、半導体封止モジュールを接着固定するための、
熱膨張性微小球を含有するシリコーン系粘着層を基材の
少なくとも片側に有するものであるが、その形態は適宜
に決定することができる。ちなみにその例としては、基
材の片面又は両面に熱膨張性微小球含有のシリコーン系
粘着層を有する形態、基材の片面に熱膨張性微小球含有
のシリコーン系粘着層を有し、他面に熱膨張性微小球を
含有しないシリコーン系を含む各種の粘着剤からなる粘
着層を有する形態などがあげられる。
The semiconductor-encapsulated module fixing sheet according to the present invention is used for bonding and fixing the semiconductor-encapsulated module.
Although the silicone-based pressure-sensitive adhesive layer containing the heat-expandable microspheres is provided on at least one side of the substrate, the form can be appropriately determined. Incidentally, examples thereof include a form having a silicone-based pressure-sensitive adhesive layer containing heat-expandable microspheres on one or both surfaces of a substrate, and a silicone-based pressure-sensitive adhesive layer containing heat-expandable microspheres on one side of a substrate, and the other surface. And a form having a pressure-sensitive adhesive layer made of various pressure-sensitive adhesives containing a silicone-based material containing no heat-expandable microspheres.

【0024】前記した基材の両面に粘着層を有するタイ
プは、半導体封止モジュールと接着しない側の粘着層を
介して固定シートを支持台等に接着する方式などで用い
られる。また粘着層は、中間層を介して基材に設けるこ
ともでき、さらに基材と粘着層又は中間層を容易に剥離
できる分離タイプや基材と粘着層又は中間層が強接着し
た固着タイプのものとして形成することもできる。
The above-mentioned type having an adhesive layer on both sides of a substrate is used in a method in which a fixing sheet is adhered to a support base or the like via an adhesive layer on a side which does not adhere to the semiconductor sealing module. The adhesive layer can also be provided on the substrate via an intermediate layer, furthermore, a separation type in which the substrate and the adhesive layer or the intermediate layer can be easily peeled or a fixed type in which the substrate and the adhesive layer or the intermediate layer are strongly bonded. It can also be formed as one.

【0025】前記した分離タイプの固定シートは、基材
に例えばセパレータなどを用いて形成することができ
る。そのセパレータは、例えば上記基材をシリコーン系
や長鎖アルキル系、フッ素系や硫化モリブデン等の適宜
な剥離剤で表面処理したもの、あるいはポリテトラフル
オロエチレンやポリクロロトリフルオロエチレン、ポリ
フッ化ビニルやポリフッ化ビニリデン、テトラフルオロ
エチレン・ヘキサフルオロプロピレン共重合体やクロロ
トリフルオロエチレン・フッ化ビニリデン共重合体の如
きフッ素系ポリマーからなる低接着性基材、ポリエチレ
ンやポリプロピレンの如き無極性ポリマーからなる低接
着性基材などとして得ることができる。
The above-mentioned separation type fixing sheet can be formed by using, for example, a separator as a base material. The separator is, for example, one obtained by subjecting the base material to a surface treatment with an appropriate release agent such as a silicone-based or long-chain alkyl-based, fluorine-based or molybdenum sulfide, or polytetrafluoroethylene, polychlorotrifluoroethylene, or polyvinyl fluoride. Low-adhesion base material composed of a fluorine-based polymer such as polyvinylidene fluoride, tetrafluoroethylene-hexafluoropropylene copolymer or chlorotrifluoroethylene-vinylidene fluoride copolymer, and low adhesion material composed of a nonpolar polymer such as polyethylene or polypropylene. It can be obtained as an adhesive substrate or the like.

【0026】一方、固着タイプの固定シートは、例えば
粘着層との密着力に優れる基材などを用いて形成するこ
とができる。その基材は、例えばポリエステルの如き高
極性のポリマーからなる強接着性のフィルムを用いる方
式、クロム酸処理やオゾン暴露、火炎暴露や高圧電撃暴
露、イオン化放射線処理等の化学的又は物理的な方式に
よる表面酸化処理などの適宜な処理を基材に施す方式な
どにより得ることができる。また基材と粘着層との密着
力の向上には、基材に下塗り層を設ける方式なども有効
である。
On the other hand, the fixing type fixing sheet can be formed using, for example, a base material having excellent adhesion to the adhesive layer. The base material is, for example, a method using a strongly adhesive film made of a polymer having high polarity such as polyester, a chemical or physical method such as a chromic acid treatment, an ozone exposure, a flame exposure, a high piezoelectric shock exposure, and an ionizing radiation treatment. A suitable treatment such as a surface oxidation treatment is performed on the base material. For improving the adhesion between the substrate and the adhesive layer, a method of providing an undercoat layer on the substrate is also effective.

【0027】なお上記した基材と粘着層の間に必要に応
じて設ける中間層としては、上記した剥離性の付与を目
的とした剥離剤のコート層や、密着力の向上を目的とし
た下塗り層の如く適宜な目的を有するものであってよ
い。中間層は、基材と粘着層の間に1層又は2層以上を
設けることができる。
The intermediate layer optionally provided between the substrate and the pressure-sensitive adhesive layer may be, for example, a coating layer of a release agent for imparting the above-mentioned releasability, or an undercoat for improving the adhesion. It may have an appropriate purpose like a layer. One or more intermediate layers can be provided between the substrate and the adhesive layer.

【0028】ちなみに前記した剥離コート層や下塗り層
以外の中間層の例としては、良好な変形性の付与を目的
とした層や半導体封止モジュールとの接着面積の増大を
目的とした層、接着力の向上を目的とした層や半導体封
止モジュールの表面形状に良好に追従させることを目的
とした層、加熱による接着力低減の処理性の向上を目的
とした層や加熱後の剥離性の向上を目的とした層などが
あげられる
Incidentally, examples of the intermediate layer other than the above-mentioned release coat layer and undercoat layer include a layer for the purpose of imparting good deformability, a layer for the purpose of increasing the adhesion area with the semiconductor sealing module, and an adhesive layer. A layer intended to improve the force, a layer intended to favorably conform to the surface shape of the semiconductor encapsulation module, a layer intended to improve the processability of reducing the adhesive force by heating, and a peeling property after heating. Layers for the purpose of improvement

【0029】前記において変形性の付与や加熱後の剥離
性の向上などの点よりは、図2に例示した如くゴム状有
機弾性層14を中間層として設ける方式が有効である。
かかるゴム状有機弾性層は、固定シートを半導体封止モ
ジュールに接着する際に表面の粘着層が半導体封止モジ
ュールの表面形状に良好に追従して大きい接着面積を提
供する働き、加熱時における粘着層の膨張の制御性を高
める働き、加熱により粘着層を面方向よりも厚さ方向に
優位に膨張させ、厚さの均一性に優れる膨張層を形成す
る働きなどをするものである。
From the viewpoint of imparting deformability and improving peelability after heating, it is effective to provide the rubber-like organic elastic layer 14 as an intermediate layer as illustrated in FIG.
Such a rubber-like organic elastic layer functions as an adhesive layer on the surface, which adheres well to the surface shape of the semiconductor encapsulation module to provide a large adhesive area when the fixing sheet is adhered to the semiconductor encapsulation module, and provides a large adhesive area during heating. It functions to enhance the controllability of the expansion of the layer, to expand the pressure-sensitive adhesive layer more predominantly in the thickness direction than in the plane direction by heating, and to form an expansion layer having excellent thickness uniformity.

【0030】前記の働き性などの点より好ましいゴム状
有機弾性層は、ASTM D−2240のD型ショアー
によるD型硬度に基づいて50以下、就中45以下、特
に40以下の天然ゴムや合成ゴム、又はゴム弾性を有す
る合成樹脂や各種の粘着剤などにより形成したものであ
る。厚さは通例、前記働きなどの点より500μm以
下、就中3〜300μm、特に5〜150μmとされる
が、これに限定されない。
The rubbery organic elastic layer, which is more preferable in view of the above-mentioned workability and the like, is preferably a natural rubber or synthetic rubber having a hardness of 50 or less, especially 45 or less, particularly 40 or less based on the D-type hardness measured by a D-type Shore of ASTM D-2240. It is formed of rubber, a synthetic resin having rubber elasticity, various adhesives, or the like. The thickness is generally 500 μm or less, especially 3 to 300 μm, and particularly 5 to 150 μm in view of the above-mentioned functions, but is not limited thereto.

【0031】前記の合成ゴム又は合成樹脂としては、例
えばシリコーン系やニトリル系、ジエン系やアクリル系
などの合成ゴム、ポリオレフィン系やポリエステル系の
如き熱可塑性エラストマー、エチレン−酢酸ビニル共重
合体やポリウレタン、ポリブタジエンや軟質ポリ塩化ビ
ニルの如きゴム弾性を有する合成樹脂があげられる。な
お加熱による接着力の低減に重点をおく場合には、常態
ではゴム弾性を示さず加熱処理時にゴム弾性を示すもの
も用いうる。
Examples of the synthetic rubber or synthetic resin include synthetic rubbers such as silicone-based, nitrile-based, diene-based and acrylic-based, thermoplastic elastomers such as polyolefin-based and polyester-based, ethylene-vinyl acetate copolymer, and polyurethane. And synthetic resins having rubber elasticity, such as polybutadiene and soft polyvinyl chloride. When emphasis is placed on the reduction of adhesive force by heating, a material that does not exhibit rubber elasticity under normal conditions but exhibits rubber elasticity during heat treatment may be used.

【0032】ゴム状有機弾性層の形成は、例えば前記形
成材の溶液を基材上に塗布する方式や、前記形成材から
なるフィルム等を基材と接着する方式などの適宜な方式
にて行うことができる。従って別個に形成したゴム状有
機弾性層や粘着層を順次積層する方式などによっても固
定シートを形成することができる。なおゴム状有機弾性
層は、前記の形成材を主成分とする粘着性物質で形成さ
れていてもよく、またかかる成分を主体とする発泡フィ
ルム等で形成されていてもよい。
The rubbery organic elastic layer is formed by an appropriate method such as a method of applying a solution of the forming material on a base material or a method of bonding a film made of the forming material to a base material. be able to. Therefore, the fixing sheet can also be formed by a method of sequentially laminating a separately formed rubbery organic elastic layer and an adhesive layer. The rubbery organic elastic layer may be formed of an adhesive substance containing the above-mentioned forming material as a main component, or may be formed of a foamed film or the like mainly containing such a component.

【0033】本発明による固定シートは、上記したよう
に半導体封止モジュールを接着固定してチップ単位に切
断するためのものである。なお固定シートを実用に供す
るまでは、その露出粘着層に対して図2に例示の如くセ
パレータ15等を仮着して、汚染による接着力の低下な
どを防止することが好ましい。
The fixing sheet according to the present invention is for bonding and fixing the semiconductor encapsulation module and cutting it into chips as described above. Until the fixing sheet is put to practical use, it is preferable to temporarily attach the separator 15 or the like to the exposed adhesive layer as illustrated in FIG. 2 to prevent a decrease in adhesion due to contamination and the like.

【0034】前記接着対象の半導体封止モジュールは、
図1(a)に例示の如く複数のチップモジュール単位の
連続体を一括に樹脂封止してなるもの2であるが、その
使用目的や封止樹脂などについては特に限定はない。ま
たその半導体封止モジュールのチップモジュール単位へ
の切断には、回転刃等の適宜な切断手段を用いることが
できる。
The semiconductor sealing module to be bonded is
As shown in FIG. 1 (a), the continuum of a plurality of chip modules is collectively resin-sealed 2, but there is no particular limitation on the purpose of use or the sealing resin. In addition, an appropriate cutting means such as a rotary blade can be used for cutting the semiconductor encapsulation module into chip module units.

【0035】さらに熱膨張性微小球含有のシリコーン系
粘着層に封止樹脂面を介して接着固定した半導体封止モ
ジュールを切断する際の固定シートの固定方式について
も、裏面の粘着層を介した支持台固定方式や減圧吸引固
定方式などの適宜な方式を適用することができる。基材
裏面の粘着層にも熱膨張性微小球含有のものを用いてベ
ルトコンベア等を介し所定間隔で切断処理に供しつつ、
後続の加熱処理で裏面側の粘着層もベルトコンベア等よ
り容易に分離できる方式なども採ることができる。
Further, the fixing method of the fixing sheet when cutting the semiconductor sealing module bonded and fixed to the silicone-based pressure-sensitive adhesive layer containing the heat-expandable microspheres via the sealing resin surface is also performed through the pressure-sensitive adhesive layer on the back surface. An appropriate system such as a support base fixing system or a reduced-pressure suction fixing system can be applied. The adhesive layer on the back of the substrate is also used for cutting at predetermined intervals through a belt conveyor or the like using a material containing heat-expandable microspheres,
A method in which the adhesive layer on the back surface side can be easily separated from the belt conveyor or the like by the subsequent heat treatment may be employed.

【0036】一方、図1(b)に例示の如く前記により
切断形成された半導体封止チップモジュール4の回収
は、粘着層に含有させた熱膨張性微小球を加熱処理によ
り膨張させて粘着層13の接着力を低減させた状態で行
う。その加熱処理は、例えばホットプレートや熱風乾燥
機、近赤外線ランプなどの適宜な加熱手段を介して行う
ことができる。
On the other hand, as shown in FIG. 1B, the semiconductor sealing chip module 4 cut and formed as described above is collected by expanding the heat-expandable microspheres contained in the adhesive layer by heat treatment. 13 is performed in a state where the adhesive force is reduced. The heat treatment can be performed, for example, via a suitable heating means such as a hot plate, a hot air drier, or a near-infrared lamp.

【0037】加熱処理の条件は、半導体封止モジュール
の表面状態や熱膨張性微粒子の種類等による接着面積の
減少性、基材や半導体封止モジュールの耐熱性、熱容量
や加熱手段などの条件により適宜に決定することができ
る。一般には100〜250℃の温度による1〜90秒
間(ホットプレート等)又は5〜60分間(熱風乾燥機
等)の加熱条件とされる。かかる加熱処理にて通例、熱
膨張性微粒子が膨張又は/及び発泡してシリコーン系粘
着層が凹凸変形して接着力が低下ないし喪失する。なお
加熱処理は、切断処理後の適宜な段階で行うことができ
る。
The conditions for the heat treatment depend on the conditions such as the surface condition of the semiconductor sealing module, the decrease in the bonding area due to the type of the heat-expandable fine particles, the heat resistance of the base material and the semiconductor sealing module, the heat capacity and the heating means. It can be determined appropriately. Generally, the heating condition is a temperature of 100 to 250 ° C. for 1 to 90 seconds (hot plate or the like) or 5 to 60 minutes (hot air dryer or the like). Usually, the heat-expandable fine particles expand or / and foam due to the heat treatment, and the silicone-based pressure-sensitive adhesive layer is unevenly deformed, so that the adhesive strength is reduced or lost. Note that the heat treatment can be performed at an appropriate stage after the cutting treatment.

【0038】[0038]

【実施例】実施例1 架橋剤を配合したシリコーン系粘着剤(SD4560)
100部(固形分、重量部、以下同じ)に熱膨張性微小
球(マイクロスフェアF−50D)30部を配合し、そ
れを厚さ50μmのポリエステルフィルムの片面に塗布
し乾燥させて厚さ35μmの粘着層を形成して、固定シ
ートを得た。
EXAMPLES Example 1 Silicone pressure-sensitive adhesive containing a crosslinking agent (SD4560)
100 parts (solid content, parts by weight, hereinafter the same) are mixed with 30 parts of heat-expandable microspheres (Microsphere F-50D), applied to one side of a 50 μm-thick polyester film, dried and dried to a thickness of 35 μm To form a fixing sheet.

【0039】比較例 シリコーン系粘着層に代えてアクリル系粘着層を設けた
ほかは実施例1に準じて固定シートを得た。アクリル系
粘着層は、アクリル酸エチル70部、アクリル酸2−エ
チルヘキシル30部及びメタクリル酸メチル5部からな
るアクリル系共重合体100部を含むトルエン溶液にロ
ジンフェノール系樹脂10部とポリウレタン系架橋剤
1.5部を配合したものからなる。
Comparative Example A fixing sheet was obtained in the same manner as in Example 1 except that an acrylic adhesive layer was provided instead of the silicone adhesive layer. The acrylic pressure-sensitive adhesive layer is prepared by adding 10 parts of a rosin phenol resin and a polyurethane crosslinking agent to a toluene solution containing 100 parts of an acrylic copolymer composed of 70 parts of ethyl acrylate, 30 parts of 2-ethylhexyl acrylate, and 5 parts of methyl methacrylate. It consists of 1.5 parts.

【0040】評価試験 接着力 実施例、比較例で得た幅20mmの固定シートをエポキシ
系封止樹脂からなる板に接着しJIS Z 0237に
準拠して、加熱前と130℃の熱風乾燥器中で10分間
加熱処理した後における180度ピール接着力(剥離速
度300mm/分、23℃)を調べた。その結果を次表に
示した。
Evaluation Test Adhesive Strength The fixing sheet having a width of 20 mm obtained in each of Examples and Comparative Examples was adhered to a plate made of an epoxy-based sealing resin, and before heating and in a hot-air dryer at 130 ° C. in accordance with JIS Z 0237. 180 ° peel adhesion (peeling speed 300 mm / min, 23 ° C.) after heat treatment for 10 minutes. The results are shown in the following table.

【0041】 [0041]

【0042】複数のチップモジュール単位の連続体を一
括にエポキシ系樹脂で封止してなる半導体封止モジュー
ルをその封止樹脂面を介し、実施例1又は比較例で得た
固定シートの粘着層に接着固定し、その固定シートを減
圧吸引下に固定して回転刃によりチップモジュール単位
に切断した後、その粘着層を前記に準じ加熱処理して半
導体封止チップモジュールを回収する方法を適用したと
ころ、比較例では接着力不足で半導体封止モジュールを
切断に必要な接着固定力で保持できず、切断不能で半導
体封止チップモジュールを得ることができなかった。
The adhesive layer of the fixing sheet obtained in Example 1 or Comparative Example was obtained by interposing a semiconductor encapsulation module obtained by encapsulating a continuum of a plurality of chip module units at once with an epoxy resin through the encapsulation resin surface. After fixing and fixing the fixing sheet under reduced pressure suction and cutting it into chip module units by a rotary blade, a method of recovering the semiconductor sealing chip module by heating the adhesive layer according to the above was applied. However, in the comparative example, the semiconductor encapsulating module could not be held with the adhesive fixing force required for cutting due to insufficient adhesive force, and the semiconductor encapsulating chip module could not be obtained because it could not be cut.

【0043】一方、実施例1の固定シートでは半導体封
止モジュールを接着固定して回転刃による切断処理を良
好に達成でき、加熱処理後の粘着層より切断形成した半
導体封止チップモジュールを容易に回収することができ
た。また得られた半導体封止チップモジュールに糊残り
は認められなかった。
On the other hand, in the fixing sheet of Example 1, the semiconductor encapsulating module can be adhered and fixed, and the cutting process by the rotary blade can be achieved satisfactorily, and the semiconductor encapsulating chip module cut and formed from the adhesive layer after the heat treatment can be easily obtained. It could be recovered. No adhesive residue was observed in the obtained semiconductor sealing chip module.

【図面の簡単な説明】[Brief description of the drawings]

【図1】製造工程例の説明断面図FIG. 1 is an explanatory sectional view of a manufacturing process example.

【図2】他の固定シート例の断面図FIG. 2 is a cross-sectional view of another example of a fixing sheet.

【符号の説明】[Explanation of symbols]

1:固定シート 11:基材 12:シリコーン系粘着
層 13:加熱処理後の粘着層 14:ゴム状有機弾性層 2:半導体封止モジュール 21:封止樹脂 22:半導体チップ 23:基板 4:半導体封止チップモジュール
1: fixing sheet 11: base material 12: silicone-based adhesive layer 13: adhesive layer after heat treatment 14: rubber-like organic elastic layer 2: semiconductor sealing module 21: sealing resin 22: semiconductor chip 23: substrate 4: semiconductor Sealed chip module

フロントページの続き (72)発明者 村田 秋桐 大阪府茨木市下穂積1丁目1番2号日東電 工株式会社内 (72)発明者 有満 幸生 大阪府茨木市下穂積1丁目1番2号日東電 工株式会社内 Fターム(参考) 5F061 AA01 BA03 CA21 CB13 Continuation of the front page (72) Inventor Muraki Akiri 1-1-2 Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation (72) Inventor Yukio Arimitsu 1-1-1-2 Shimohozumi, Ibaraki-shi, Osaka F-term in Nitto Denko Corporation (reference) 5F061 AA01 BA03 CA21 CB13

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 複数のチップモジュール単位の連続体を
一括に樹脂封止してなる半導体封止モジュールをその封
止樹脂面を介し、熱膨張性微小球含有のシリコーン系粘
着層を有する固定シートで接着固定して半導体封止チッ
プモジュール単位に切断した後、その粘着層を加熱し含
有の熱膨張性微小球を膨張させて接着力の低減処理を施
し前記の半導体封止チップモジュールを当該加熱処理後
の粘着層より回収することを特徴とする半導体封止チッ
プモジュールの製造方法。
1. A fixing sheet having a heat-expandable microsphere-containing silicone-based pressure-sensitive adhesive layer through a sealing resin surface of a semiconductor sealing module obtained by collectively resin-sealing a continuum of a plurality of chip module units. After being cut in units of the semiconductor encapsulation chip module by adhesive bonding, the adhesive layer is heated to expand the contained heat-expandable microspheres to reduce the adhesive force, and the semiconductor encapsulation chip module is heated. A method for manufacturing a semiconductor-encapsulated chip module, comprising recovering from a treated adhesive layer.
【請求項2】 樹脂封止した半導体封止モジュールの封
止樹脂面と接着される粘着層を基材の少なくとも片側に
有してなり、その粘着層が熱膨張性微小球を含有するシ
リコーン系粘着層からなることを特徴とする半導体封止
モジュール固定シート。
2. A silicone resin comprising a pressure-sensitive adhesive layer adhered to a sealing resin surface of a resin-sealed semiconductor sealing module on at least one side of a substrate, wherein the pressure-sensitive adhesive layer contains heat-expandable microspheres. A semiconductor sealing module fixing sheet, comprising an adhesive layer.
【請求項3】 請求項2において、基材と粘着層の間に
ゴム状有機弾性層を有する半導体封止モジュール固定シ
ート。
3. The semiconductor-encapsulated module fixing sheet according to claim 2, having a rubber-like organic elastic layer between the substrate and the adhesive layer.
JP11162070A 1999-06-09 1999-06-09 Manufacture of semiconductor sealing chip module and its fixing sheet Pending JP2000349107A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11162070A JP2000349107A (en) 1999-06-09 1999-06-09 Manufacture of semiconductor sealing chip module and its fixing sheet

Publications (1)

Publication Number Publication Date
JP2000349107A true JP2000349107A (en) 2000-12-15

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Country Link
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