TW200923586A - Coating method - Google Patents

Coating method Download PDF

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Publication number
TW200923586A
TW200923586A TW97130426A TW97130426A TW200923586A TW 200923586 A TW200923586 A TW 200923586A TW 97130426 A TW97130426 A TW 97130426A TW 97130426 A TW97130426 A TW 97130426A TW 200923586 A TW200923586 A TW 200923586A
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TW
Taiwan
Prior art keywords
wafer
adhesion layer
jig
main body
thin plate
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Application number
TW97130426A
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Chinese (zh)
Inventor
Takeshi Segawa
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Lintec Corp
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Publication of TW200923586A publication Critical patent/TW200923586A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A wafer is protected against damage at the time of forming a predetermined film, by dripping coating agent on the surface of the wafer which is ground extremely thinly through a back grind step and then by smoothing the surface. A wafer W is carried under such a state as a fixing tool (1) is fixed tightly to one side of the wafer and then it is held by a coating device. The fixing tool consists of a planar tool main body (2), and an adhesion layer (3) provided on one side of the tool main body in order to tightly holding a semiconductor wafer removably. The tool main body is provided, on one side thereof, with a plurality of protrusions (4) for supporting the adhesion layer and, at the outer periphery on one side thereof, with a sidewall (5) having a height equal to that of the supporting protrusion. The adhesion layer is bonded to the end face of the sidewall and a section space (6) surrounded by the sidewall is defined between the adhesion layer and the tool main body, a vent (7) communicating with the section space is formed in the tool main body, and the adhesion layer is deformed by sucking air in the section space through the vent.

Description

200923586 九、發明說明 【發明所屬之技術領域】 本發明是關於用以在薄板狀之工件表面均勻地塗佈阻 劑等之液狀塗佈劑的塗佈方法,特別是關於用以均勻地塗 佈液狀塗佈劑’而即使是將薄板狀之工件硏磨爲極薄的半 導體晶圓亦不會破損之塗佈方法。 【先前技術】 爲了在半導體晶圓(以下稱爲「晶圓」)表面形成預 定之佈線圖案,舉例來說,已使用光微影技術。已知在該 光微影技術,爲了在晶圓表面均勻地塗佈光阻,舉例來說 ,使用旋轉式塗佈裝置(旋轉塗佈機)。 旋轉塗佈機是在保持爲水平之晶圓表面滴落阻劑之後 ,藉由使該晶圓以預定之旋轉速度旋轉加以平滑化,在晶 圓表面均勻地形成阻劑膜之物。在該旋轉塗佈機設有真空 吸附來固定晶圓之平視圓形的支承體(旋轉頭),而利用 該旋轉頭可將晶圓保持水平(例如,專利文獻1 )。 在此,利用上述光微影技術的佈線圖案之形成,一般 是在硏磨晶圓的背面(電路面和相對側之面)之背硏磨製 程之前進行。另一方面,伴隨著近年之半導體裝置的高積 體化、微小化之要求,而產生了在晶圓的背面亦形成電路 的情況。在這種情況,變成在上述背硏磨製程後,於晶圓 表面塗佈光阻。 [專利文獻1]特開平8-31715號公報 -5- 200923586 【發明內容】 [發明所欲解決之問題] 然而’經過背硏磨製程而被硏磨爲極薄之晶圓 受到些微衝擊也會損壞掉。因此,在將硏磨後的晶 至旋轉塗佈機期間、將晶圓真空吸附於旋轉頭時、 除吸附而從旋轉頭卸下晶圓之時,會有晶圓損壞之 ’在專利文獻1所記載之塗佈裝置的情況,由於旋 吸附孔被設定在比起晶圓直徑更靠近中心的位置, 的外周部不被支承,而極薄之晶圓變成產生翹曲的 因此,由於旋轉頭之旋轉,未被支承之晶圓外周部 心力而破損。 所以,本發明鑑於以上之點,以提供可將塗佈 地塗佈在晶圓表面,而不會使晶圓破損的塗佈方法 題。 [用以解決問題之手段] 爲了解決上述問題,本發明是包含將液狀塗佈 在薄板狀之工件的製程和使前述被滴落之液狀塗佈 化的製程之塗佈方法,其特徵爲:前述薄板狀之工 由固定治具將被液狀滴落的相對面側緊貼固定;前 治具是由板狀的治具本體、和設於該治具本體之單 貼保持而自由裝卸薄板狀之工件的緊貼層所構成’ 具本體在單面具有支承前述緊貼層的複數個支承突 ,即使 圓搬運 或是解 虞。又 轉頭的 故晶圓 狀態。 會因離 劑均勻 爲其課 劑滴落 劑平滑 件是藉 述固定 面且緊 前述治 起,並 -6- 200923586 且在單面的外周部具有和前述支承突起同等高度的側壁, 在該側壁的端面黏著有前述緊貼層,在前述緊貼層和前述 治具本體之間劃分出由前述側壁所包圍的區劃空間,在前 述治具本體形成有連通至前述區劃空間的通氣孔,利用經 由該通氣孔來吸引前述區劃空間內的空氣,使用前述緊貼 層所變形之物。 又,在前述之塗佈方法,其特徵爲··前述薄板狀之工 件是被施以硏磨加工的半導體晶圓。 [發明之效果] 根據本發明,在依舊將固定治具緊貼固定於薄板狀之 工件的狀態下搬運至塗佈裝置,經由固定治具來保持薄板 狀之工件。然後’在該狀態下滴落液狀塗佈劑,進行其平 滑化。因此’不只將薄板狀之工件搬運至塗佈裝置期間, 例如在從對旋轉塗佈機之旋轉頭的真空吸附至其卸下之期 間’可防止薄板狀之工件破損,且將塗佈劑均勻地塗佈在 薄板狀之工件表面。 另一方面,在將薄板狀之工件從上述固定治具卸下時 ’一旦利用通氣孔之真空吸引而經由通氣孔來吸引區劃空 間內的空氣,緊貼層便會在支承突起間凹陷變形,而薄板 狀之工件對緊貼層的接觸面積減少。因此,不需對薄板狀 之工件過度施力,便可使其自固定治具脫離。 【貫施方式】 200923586 以下將以被硏磨爲極薄之晶圓W作爲薄板狀的工件 之例來加以說明。參照圖1、圖2,1顯示固定晶圓w的 固定治具。該固定治具1是由板狀的治具本體2和設於治 具本體2之單面的緊貼層3所構成。 治具本體2被形成爲直徑比晶圓W稍大的圓盤狀。 治具本體2的材料只要機械強度優異即可,並未特別加以 限定’例如可舉出鋁合金、鎂合金、不銹鋼等之金屬材料 、聚醯胺、聚碳酸酯、聚丙烯、壓克力、聚氯乙烯等之樹 脂成形材料、玻璃等之無機材料、玻璃纖維強化環氧樹脂 等之有機無機複合材料等。 在治具本體2的單面,以0.2〜2.0 mm程度之間距形 成有複數個0.〇5〜0.5 mm程度之高度且直徑爲〇.〇5〜1.0 mm程度之圓柱狀的支承突起4。另外,在治具本體2的 單面之外周部,形成有和支承突起4同等高度的圓筒狀之 側壁5。再者,亦可將支承突起4形成爲圓柱狀以外的形 狀’例如,圓錐梯形。另一方面,較佳先將治具本體2的 另一面平滑加工爲具有預定之表面粗度。 緊貼層3是由20〜200 μιη之厚度的膜所形成,且該 膜是由可撓性、柔軟性、耐熱性、彈性、黏著性等優異的 胺甲酸乙酯系 '壓克力系、氟系、聚矽氧系等之彈性體所 構成。然後’在治具本體2之側壁5的端面,以黏著劑、 熱封劑等黏著有緊貼層3的外周部。藉此,在緊貼層3和 治具本體2之間劃分出由側壁5所包圍的區劃空間6。又 ,緊貼層3緊靠於各支承突起4的平坦之端面而被支承。 200923586 又,在治具本體2形成有至少一個通氣孔7,該通氣孔7 朝治具本體2的厚度方向貫通治具本體2而連通至區劃空 間6。 在如上述將晶圓W緊貼固定於固定治具1的狀態下 ,利用如圖3所示之塗佈裝置的旋轉塗佈機1 〇,在晶圓 W表面形成預定之薄膜。旋轉塗佈機10具有周知之構造 ,其具備:水平保持固定治具1而自由旋轉的旋轉頭n、 以及將阻劑等之液狀的塗佈劑滴落於旋轉頭1 1上之晶圓 W的噴嘴1 2。 在旋轉頭1 1的平視圓形之載置部形成有吸附孔1 1 a, 該吸附孔Π a與貫通於旋轉頭內的通氣路1丨b連通,藉由 未圖示之真空泵V所造成的真空吸引,真空吸附固定治具 1的背面來加以固定。 接著說明本發明的塗佈方法之動作。首先,使上述固 定治具1緊貼於晶圓W的電路面側,令在硏磨加工之後 變爲極薄之晶圓W成爲被支承固定而可安全地處理之狀 態。此時,亦可使保護電路面之保護用黏著片介於晶圓W 和固定治具1之間。接著,將由固定治具1所支承固定的 晶圓W搭載於周知之硏磨裝置(未圖示)的加工台。然 後’利用硏磨裝置之粗硏磨手段,進行晶圓W背面(電 路面和相對側之面)之粗硏磨,而硏磨成預定之厚度。之 後’利用精硏磨手段,將晶圓W背面精硏磨、洗淨。另 外,視需要而在晶圓W的硏磨面進行利用濕拋光等之應 力釋放處理。 -9- 200923586 接下來,在使被硏磨爲極薄之晶圓W緊貼於固定治 具1的狀態下,以例如具有周知之構造的搬運手臂搬運至 上述塗佈裝置10,且載置於旋轉頭11的載置面。一旦載 置固定治具1,便使真空泵V作動而藉由通氣路lib的真 空吸引,將固定治具1,進而將晶圓W水平保持於旋轉頭 1 1。然後,經由噴嘴12滴落預定之塗佈劑,接著,藉由 使附設於旋轉頭11的馬達(未圖示)以預定之旋轉速度 旋轉,來使塗佈劑平滑化。 塗佈有液狀塗佈劑之晶圓W是依需求而由紫外線照 射裝置等之塗佈劑固化手段(未圖示)所轉印,而使液狀 塗佈劑固化。晶圓W由於是由固定治具1所支承固定, 故不會發生鬆弛或翹曲。因此,只要藉由保持晶圓W的 水平面,即可將所塗佈之液狀塗佈劑被搬運到塗佈劑固化 手段爲止期間的流動變形抑制至最小。 如此,在本實施形態,在依舊將固定治具1緊貼固定 於被硏磨爲極薄之晶圓W的狀態下搬運至塗佈裝置10, 經由固定治具1來水平保持晶圓W,所以不只將硏磨後之 晶圓W搬運至塗佈裝置1 0期間,在安裝於旋轉頭1 1及 其卸下之際,可防止晶圓W破損。 另一方面,在從上述固定治具1卸下晶圓W時,一 旦利用未圖示之真空泵所造成的通氣孔lla之真空吸引, 經由通氣孔1 1 a來吸引區劃空間6內的空氣,緊貼層3便 會在支承突起4間凹陷變形’而晶圓W對緊貼層3的接 觸面積減少。因此’不需對晶圓過度施力,便可使其自固 -10- 200923586 定治具脫離。 另外,在本實施形態,雖然是說明了在將晶圓W固 定於固定治具1的狀態下,硏磨其背面且搬運至塗佈裝置 的情況,但並不限於此,亦可在硏磨了晶圓W的背面之 後,使固定治具1緊貼固定於晶圓W的另一面,再搬運 至塗佈裝置10。又,雖然以旋轉塗佈機爲例來作爲塗佈裝 置,但不限於此,而亦可採用刀式塗佈機、壓鑄塗佈機( die coater )、網版塗佈機等之其他的塗佈裝置。 此外,雖然以光阻爲例來作爲液狀塗佈劑,但不限於 此,而亦可爲液狀黏著劑 '保護膜用塗料或液狀密封劑。 又,雖然以晶圓爲例來作爲薄板狀之工件,但不限於此, 而亦可使用由玻璃、陶瓷或金屬塑膠等各種材料所構成的 薄板狀物。 【圖式簡單說明】 圖1是本發明之實施形態的固定治具之模型剖面圖。 圖2是上述固定治具之治具本體的平面圖。 圖3是本發明的實施形態之進行對晶圓塗佈塗佈劑白勺 塗佈裝置之模型剖面圖。 【主要元件符號說明】 1 :固定治具 2 :治具本體 3 :緊貼層 -11 - 200923586 4 :支承突起 5 :側壁 6 :區劃空間 7 :通氣孔 8 :吸附孔 1 〇 :塗佈裝置(旋轉塗佈機) 1 1 :旋轉頭 1 2 :噴嘴 W :晶圓 -12-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating method for uniformly coating a liquid coating agent such as a resist on a surface of a thin plate-shaped workpiece, and more particularly to uniformly coating The liquid coating agent' is a coating method that does not break even if a thin plate-shaped workpiece is honed into an extremely thin semiconductor wafer. [Prior Art] In order to form a predetermined wiring pattern on the surface of a semiconductor wafer (hereinafter referred to as "wafer"), for example, photolithography has been used. In the photolithography technique, in order to uniformly apply a photoresist on the surface of a wafer, for example, a spin coater (rotary coater) is used. The spin coater smoothes the wafer by rotating it at a predetermined rotational speed after the wafer surface is dripped at a predetermined level, thereby uniformly forming a resist film on the surface of the wafer. In the spin coater, a dome-shaped support (rotary head) for fixing a wafer by vacuum suction is provided, and the wafer can be held horizontal by the rotary head (for example, Patent Document 1). Here, the formation of the wiring pattern by the above-described photolithography technique is generally performed before the back honing process of honing the back surface (the surface of the circuit surface and the opposite side) of the wafer. On the other hand, with the demand for high integration and miniaturization of semiconductor devices in recent years, circuits have been formed on the back surface of wafers. In this case, the photoresist is applied to the surface of the wafer after the above-described backgrinding process. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 8-31715-5-200923586 [Disclosure] [Problems to be Solved by the Invention] However, a wafer that has been honed to a very thin thickness by a back-grinding process may be slightly impacted. Damaged. Therefore, when the wafer is vacuum-adsorbed to the rotary head during the honing of the crystal to the spin coater, the wafer is damaged when the wafer is unloaded from the rotary head except for adsorption. [Patent Document 1] In the case of the coating apparatus described above, since the spin-adsorption hole is set at a position closer to the center than the wafer diameter, the outer peripheral portion is not supported, and the extremely thin wafer becomes warped. The rotation of the unsupported wafer is damaged by the peripheral force of the peripheral portion. Therefore, the present invention has been made in view of the above points to provide a coating method which can apply a coating on a wafer surface without damaging the wafer. [Means for Solving the Problems] In order to solve the above problems, the present invention is a coating method including a process of applying a liquid to a workpiece in a thin plate shape and a process of coating the liquid to be dripped, and the characteristics thereof are characterized. Therefore, the above-mentioned thin plate-shaped work is closely fixed to the opposite side of the liquid to be dripped by the fixed jig; the front jig is freely held by the plate-shaped jig body and the single sticker provided on the jig body. The close-fitting layer of the workpiece in which the sheet-like workpiece is attached and detached has a plurality of support protrusions on one side having the above-mentioned adhesion layer, even if it is handled or untwisted. The state of the wafer is turned. Even if the agent is evenly distributed, the drip agent smoothing member is a fixed surface and is tightly pressed, and -6-200923586 and has a side wall of the same height as the aforementioned supporting protrusion at the outer peripheral portion of the single side, on the side wall The end surface is adhered to the abutting layer, and a partition space surrounded by the side wall is defined between the abutting layer and the jig body, and a vent hole that communicates with the partition space is formed in the jig body, and The vent hole attracts the air in the zoning space, and the object deformed by the abutting layer is used. Further, in the above coating method, the sheet-shaped workpiece is a semiconductor wafer subjected to honing processing. [Effect of the Invention] According to the present invention, the fixing jig is conveyed to the coating device while being firmly attached to the workpiece in the form of a thin plate, and the workpiece of the thin plate shape is held by the fixing jig. Then, the liquid coating agent was dropped in this state, and the smoothing was carried out. Therefore, it is possible to prevent the sheet-like workpiece from being damaged and to spread the coating agent, not only during the conveyance of the thin-plate-shaped workpiece to the coating device, for example, during the suction from the vacuum of the rotary head of the spin coater. The ground is applied to the surface of a thin plate-like workpiece. On the other hand, when the thin plate-shaped workpiece is detached from the fixed jig, 'once the vacuum is sucked by the vent hole and the air in the zoning space is sucked through the vent hole, the close layer is sag and deformed between the support protrusions. The contact area of the thin plate-shaped workpiece to the adhesion layer is reduced. Therefore, it is possible to detach the self-fixing jig without excessively applying force to the thin plate-shaped workpiece. [Complex Application Method] 200923586 Hereinafter, an example in which a wafer W which is honed to be extremely thin is used as a thin plate-shaped workpiece will be described. Referring to Figures 1, 2 and 1, a fixed jig for fixing the wafer w is shown. This fixing jig 1 is composed of a plate-shaped jig body 2 and a close-fitting layer 3 provided on one side of the jig body 2. The jig body 2 is formed in a disk shape having a diameter slightly larger than the wafer W. The material of the jig body 2 is not particularly limited as long as it has excellent mechanical strength. For example, metal materials such as aluminum alloy, magnesium alloy, and stainless steel, polyamine, polycarbonate, polypropylene, acrylic, and the like may be mentioned. A resin molding material such as polyvinyl chloride, an inorganic material such as glass, or an organic-inorganic composite material such as a glass fiber reinforced epoxy resin. On one side of the jig body 2, a cylindrical support projection 4 having a height of about 0.5 to 0.5 mm and a diameter of about 〇5 to 1.0 mm is formed at a distance of about 0.2 to 2.0 mm. Further, a cylindrical side wall 5 having the same height as the support projection 4 is formed on the outer peripheral portion of the single-sided surface of the jig body 2. Further, the support protrusion 4 may be formed in a shape other than a columnar shape, for example, a conical trapezoid. On the other hand, it is preferable to smoothly process the other surface of the jig body 2 to have a predetermined surface roughness. The adhesion layer 3 is formed of a film having a thickness of 20 to 200 μm, and the film is an urethane-based acrylic structure excellent in flexibility, flexibility, heat resistance, elasticity, adhesion, and the like. It is composed of an elastomer such as fluorine or polyoxynitrene. Then, the outer peripheral portion of the adhesion layer 3 is adhered to the end surface of the side wall 5 of the jig body 2 with an adhesive, a heat sealant or the like. Thereby, the compartment space 6 surrounded by the side wall 5 is defined between the adhesion layer 3 and the jig body 2. Further, the abutting layer 3 is supported against the flat end surface of each of the support projections 4. Further, in the jig body 2, at least one vent hole 7 is formed, and the vent hole 7 penetrates the jig body 2 in the thickness direction of the jig body 2 to communicate with the partition space 6. In the state in which the wafer W is closely attached to the fixed jig 1 as described above, a predetermined film is formed on the surface of the wafer W by the spin coater 1 of the coating device shown in Fig. 3. The spin coater 10 has a well-known structure including a rotary head n that is free to rotate while holding the fixture 1 horizontally, and a wafer in which a liquid coating agent such as a resist is dropped on the rotary head 1 1 Nozzle 1 of W. An adsorption hole 1 1 a is formed in the head-on circular mounting portion of the rotary head 1 1 , and the adsorption hole Π a communicates with the air passage 1 丨 b penetrating through the rotary head, and is provided by a vacuum pump V (not shown). The vacuum suction is caused, and the back surface of the jig 1 is vacuum-adsorbed to fix it. Next, the operation of the coating method of the present invention will be described. First, the fixed jig 1 is brought into close contact with the circuit surface side of the wafer W, so that the wafer W which is extremely thin after the honing process is supported and fixed, and can be handled safely. At this time, the protective adhesive sheet for the protective circuit surface may be interposed between the wafer W and the fixed jig 1. Next, the wafer W supported and fixed by the fixed jig 1 is mounted on a processing table of a known honing device (not shown). Then, the rough honing of the back surface of the wafer W (the surface of the electric road surface and the opposite side) is performed by the rough honing means of the honing device, and honed to a predetermined thickness. After that, the back surface of the wafer W is finely ground and washed by means of fine honing. Further, a stress release treatment using wet polishing or the like is performed on the honing surface of the wafer W as needed. -9-200923586 Next, in a state in which the wafer W that has been honed to be extremely thin is adhered to the fixed jig 1, it is transported to the coating device 10 by, for example, a transport arm having a well-known structure, and placed thereon. On the mounting surface of the rotary head 11. Once the fixture 1 is placed, the vacuum pump V is actuated and the vacuum is sucked by the air passage lib, and the jig 1 is fixed, and the wafer W is horizontally held by the rotary head 1 1 . Then, a predetermined coating agent is dropped through the nozzle 12, and then the coating agent is smoothed by rotating a motor (not shown) attached to the rotary head 11 at a predetermined rotational speed. The wafer W coated with the liquid coating agent is transferred by a coating agent curing means (not shown) such as an ultraviolet irradiation device as required, and the liquid coating agent is cured. Since the wafer W is supported and fixed by the fixed jig 1, no slack or warpage occurs. Therefore, by maintaining the horizontal plane of the wafer W, the flow deformation during the conveyance of the applied liquid coating agent to the coating agent curing means can be minimized. In the present embodiment, the fixing jig 1 is conveyed to the coating device 10 while being fixed to the wafer W that is honed to be extremely thin, and the wafer W is horizontally held by the fixing jig 1 . Therefore, not only when the honed wafer W is transported to the coating apparatus 10, but also when the rotary head 1 is attached and detached, the wafer W can be prevented from being damaged. On the other hand, when the wafer W is detached from the fixed jig 1 , the air in the zoning space 6 is sucked through the vent hole 1 1 a by the vacuum suction of the vent hole 11 a by the vacuum pump (not shown). The adhesion layer 3 is concavely deformed between the support protrusions 4, and the contact area of the wafer W to the adhesion layer 3 is reduced. Therefore, it is possible to self-solidify without excessive force on the wafer. -10-200923586 The fixture is detached. Further, in the present embodiment, the case where the wafer W is fixed to the fixed jig 1 and the back surface thereof is honed and conveyed to the coating device has been described. However, the present invention is not limited thereto, and may be honed. After the back surface of the wafer W, the fixing jig 1 is adhered and fixed to the other surface of the wafer W, and then transported to the coating device 10. Further, although the spin coater is exemplified as the coating device, it is not limited thereto, and other coatings such as a knife coater, a die coater, and a screen coater may be used. Cloth device. Further, although the photoresist is exemplified as the liquid coating agent, it is not limited thereto, and may be a liquid adhesive agent or a liquid sealant. Further, the wafer is exemplified as a thin plate-shaped workpiece. However, the present invention is not limited thereto, and a thin plate member made of various materials such as glass, ceramic, or metal plastic may be used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a model of a fixing jig according to an embodiment of the present invention. Fig. 2 is a plan view showing the body of the jig of the above fixed jig. Fig. 3 is a schematic cross-sectional view showing a coating apparatus for applying a coating agent to a wafer according to an embodiment of the present invention. [Description of main component symbols] 1 : Fixing fixture 2 : Fixture body 3 : Adhesive layer - 11 - 200923586 4 : Supporting projection 5 : Side wall 6 : Space for partition 7 : Vent hole 8 : Adsorption hole 1 〇: Coating device (Rotary coater) 1 1 : Rotary head 1 2 : Nozzle W: Wafer-12-

Claims (1)

200923586 十、申請專利範園 1. 一種塗佈方法,是包含將液狀塗佈劑滴落在薄板狀 之工件的製程和使前述被滴落之液狀塗佈劑平滑化的製程 之塗佈方法,其特徵爲: 前述薄板狀之工件是藉由固定治具將被液狀滴落的相 對面側緊貼固定; 做爲目U述固疋治具’是由板狀的治具本體、和設於該 治具本體之單面且緊貼保持而自由裝卸薄板狀之工件的緊 貼層所構成,前述治具本體在單面具有支承前述緊貼層的 複數個支承突起’並且在單面的外周部具有和前述支承突 起同等高度的側壁’在該側壁的端面黏著有前述緊貼層, 在前述緊貼層和前述治具本體之間劃分出由前述側壁所包 圍的區劃空間’在前述治具本體形成有連通至前述區劃空 間的通氣孔,利用經由該通氣孔來吸引前述區劃空間內的 空氣,使用前述緊貼層所變形之物。 2 .如申請專利範圍第1項所記載之塗佈方法,其中, 前述薄板狀之工件是被施以硏磨加工的半導體晶圓。 -13-200923586 X. Patent application 1. A coating method comprising a process of dropping a liquid coating agent onto a thin plate-shaped workpiece and a process of smoothing the dripped liquid coating agent. The method is characterized in that: the thin plate-shaped workpiece is closely attached to the opposite side of the liquid to be dripped by the fixing jig; And a fastening layer provided on a single surface of the fixture body and attached to the workpiece to freely load and unload a thin plate-shaped workpiece, the fixture body having a plurality of support protrusions supporting the abutting layer on one side and The outer peripheral portion of the surface has a side wall having the same height as the support protrusion, and the abutting layer is adhered to the end surface of the side wall, and a zoning space surrounded by the side wall is defined between the abutting layer and the jig body. The jig body is formed with a vent hole that communicates with the zoning space, and the air in the zoning space is sucked through the vent hole, and the object deformed by the abutting layer is used. The coating method according to the first aspect of the invention, wherein the sheet-shaped workpiece is a honed semiconductor wafer. -13-
TW97130426A 2007-08-09 2008-08-08 Coating method TW200923586A (en)

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JP2010239026A (en) * 2009-03-31 2010-10-21 Tokyo Electron Ltd Substrate holding member and liquid treatment apparatus
KR101534357B1 (en) 2009-03-31 2015-07-06 도쿄엘렉트론가부시키가이샤 Substrate support device and substrate support method
JP5757649B2 (en) * 2011-02-14 2015-07-29 信越ポリマー株式会社 Holding jig

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