TW200923072A - Cleaning agent for electronic material - Google Patents

Cleaning agent for electronic material Download PDF

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Publication number
TW200923072A
TW200923072A TW097135224A TW97135224A TW200923072A TW 200923072 A TW200923072 A TW 200923072A TW 097135224 A TW097135224 A TW 097135224A TW 97135224 A TW97135224 A TW 97135224A TW 200923072 A TW200923072 A TW 200923072A
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Taiwan
Prior art keywords
cleaning
acid
substrate
salt
electronic material
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TW097135224A
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Chinese (zh)
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TWI398514B (en
Inventor
Kazumitsu Suzuki
Ayayo Sugiyama
Yoshitaka Katsukawa
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Sanyo Chemical Ind Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A cleaning agent for electronic materials, such as magneto-optical disk substrate, flat panel display substrate and mask substrate is provided, wherein the cleaning agent provides a suitable etching ability for surfaces of electronic materials such as the above-mented and prevents to damge the surfaces thereof. The dispersity of particles removed from the substrate surface is enhanced by using a surfactant in the cleaning agent so as to achieve an excellent particle removing ability. Therefore, fabricating yield is improved and high cleaning performance is achieved within a short time. The cleaning agent for electronic materials has surfactant (A), and the PH value and the redox potential of the cleaning agent under a circustace of active ingredient concentration and 25 degree satisfy the following formula (1), wherein the formula (1) represents as V ≤ -38.7xpH+550.

Description

200923072 九、發明說明: 【發明所屬之技術領域】 本發明是關於一種電子材料用清潔劑,更詳細而言, 本發明是關於一種磁光碟(magnet〇_〇pticaldisk)基板、平 面顯示器(flatpanel display)基板及光罩(ph〇t〇mask)基 板等電子材料用清潔劑。 【先前技術】 磁光碟基板、平面顯示器基板及光罩基板等電子材料 的清潔技術中,在製造步驟中殘留在基板上的微量的有機 物污潰、玻璃屑(glass cullet)以及砥粒(abrasive grain) 等雜質會對電子材料的性能或良率造成較大的影響,因此 雜質控制變得極為重要。尤其是由於作為清潔對象的雜質 越來越微粒(顆粒,particle)化,比先前更容易附著、殘 留在界面上,故而迫切要求確立高度清潔技術。 因此,為了防止由這些顆粒所造成的污染,例如於曰 本專利特開平11-43791號公報、日本專利特開 2001-276759號公報、以及日本專利特開2〇〇2_212597號公 報中,提出了使用界面活性劑來提高顆粒除去性的方法。 但是,在磁光碟用基板中的特別是鋁基板的製造步驟 中’包含:在基板表面電鍍作為非磁性層的抓^層,然後 使用氧化!呂聚料(alumina slurry )及矽酸膠(c〇u〇idal silica) 來進行研磨並進行鏡面拋光(mirror finish)的步驟;以及 之後視需要使用鑽石漿料(diamond slurry)等來使基板表 面紋理化(texturing)的步驟,由此存在如下問題:於這 200923072 些=驟中’研磨劑或研磨屑牢固地附著在基板表面,無法 在>月潔步驟中將所附著的研磨㈣研㈣充分除去。另 外’在磁光碟用基板中的特別是玻璃基板的製造步驟中, 包含以氧化鈽來進行研磨並進行鏡面拋光的步驟、以及之 後視需要使用鑽石槳料等來使基板表面紋理化的步驟,由 此,在如下問題:於這些步驟中,研磨劑或研磨屑牢固地 附著在基板表面,無法在清潔步驟中將所附著的研磨劑或 :磨屬充分除去另外,在平面顯示器基板或光草基板的 衣造步驟$ ’存在下制題:自素_ (motherglass)上 ^需要切_當大小的朗基板時所產生的玻璃碎屑(通 稱玻璃屑)、飛濺於無塵室内(cleanr〇〇m)的加工油等有 ,物污々或者在對基板表面或端面進行研磨的步驟中所 使用的研磨劑或研磨屬等會牢固地附著在基板表面,無法 在清潔步驟中充分除去。 ,,以研磨劑、研磨屑以及有機物污潰為代表的 2粒牛固地附著在基板表面,故而為了將這些顆粒充分除 去,必須對基板或研磨劑表_加_ (etehing),使顆 ^至液體中’並且儘量使分散在液體中的顆粒不會再次 =於基板表面。其中,於日本專利特開平1M37 了^方法’即,使用含有對研磨劑的吸附量大 =於5 mg/m、且數量平均分子量大於科輝 界面活性劑’並且10 vol%水溶液的表面張力小 於等於3G dyne/em的清箱組成物,來使 研磨劑微粒凝集、粗大化,從而防止微粒2 =對= 200923072BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a cleaning agent for electronic materials. More specifically, the present invention relates to a magneto-optical disk substrate and a flat panel display. A cleaning agent for electronic materials such as a substrate and a reticle (mask) substrate. [Prior Art] In the cleaning technology of electronic materials such as a magneto-optical disk substrate, a flat display substrate, and a photomask substrate, a trace amount of organic matter, glass cullet, and abrasive grain remaining on the substrate in the manufacturing process. Impurities and other factors can have a large impact on the performance or yield of electronic materials, so impurity control becomes extremely important. In particular, since the impurities to be cleaned are more and more particles, which are more likely to adhere to and remain on the interface than before, it is urgent to establish a high-cleaning technique. Therefore, in order to prevent the contamination caused by the particles, for example, in Japanese Laid-Open Patent Publication No. Hei 11-43791, Japanese Patent Laid-Open No. 2001-276759, and Japanese Patent Laid-Open Publication No. Hei No. Hei. A method of using a surfactant to improve particle removability. However, in the manufacturing step of the substrate for a magneto-optical disk, particularly the aluminum substrate, 'contains: a plating layer which is a non-magnetic layer is plated on the surface of the substrate, and then an oxidized alumina slurry and a citric acid gel are used. 〇u〇idal silica) a step of performing a mirror finish and a mirror finish; and then, using a diamond slurry or the like as needed to texturize the surface of the substrate, thereby having the following problems : In this 200923072, some of the abrasives or abrasive chips adhered firmly to the surface of the substrate, and the attached polishing (4) was not sufficiently removed in the > In addition, in the manufacturing step of the glass substrate for a magneto-optical disk, in particular, a step of performing polishing by yttrium oxide and performing mirror polishing, and a step of texturing the surface of the substrate using a diamond paddle or the like as needed, Thus, there is a problem in that the abrasive or the abrasive scrap adheres firmly to the surface of the substrate in these steps, and the attached abrasive or the abrasive is not sufficiently removed in the cleaning step, in addition, on the flat display substrate or the light grass The manufacturing process of the substrate is made in the following section: On the mother glass, it is necessary to cut the glass crumb (used as glass shavings) generated when the size of the substrate is large, and splash in the clean room (cleanr〇〇 The processing oil of m), such as the polishing agent or the polishing agent used in the step of polishing the surface or the end surface of the substrate, adheres strongly to the surface of the substrate and cannot be sufficiently removed in the cleaning step. Two kinds of cattle, represented by abrasives, grinding debris, and organic matter, adhere to the surface of the substrate. Therefore, in order to sufficiently remove these particles, it is necessary to add _ (etehing) to the substrate or the abrasive table to make the particles ^ Into the liquid 'and as far as possible, the particles dispersed in the liquid will not be again = on the surface of the substrate. Among them, in Japanese Patent Laid-Open No. 1M37, the method uses a method in which the amount of adsorption to the abrasive is large = 5 mg/m, and the number average molecular weight is greater than that of the Kehui surfactant, and the surface tension of the 10 vol% aqueous solution is less than A clearing box composition equal to 3G dyne/em to agglomerate and coarsen the abrasive particles, thereby preventing particles 2 = pair = 200923072

田J許經粗大化的粒子附著在基板表面時有可能會引起嚴 重的問題。而且,於日本專利特開平u_43791號公報中, 對上述清潔劑組成物的具體成分調配未作說明。另外,日 本專利,開2001-276759號公報中所提出的清潔劑是溶解 有氟化氬及臭氧(ozone)的清潔液,若利用該清潔劑,則 雖可期待藉由侧而將牢固地附著在基板表面的顆粒除去 的效果,但疋存在以下問題:由於清潔液中含有氟離子而 導致在廢水纽上會耗費巨大的成本,而且,由於該清潔 液的蝕刻性過強而導致在清潔時會損害基板的平坦性。 外藉由使玻璃基板以及研磨粒表面的動電位(汉乜 Potential)為負(minus)值,可防止顆粒再次附著但是 此防止效果並不充分。除此以外’日本專利特開 2002-212597號公報中所提出的清潔劑中,可藉由使用陰 離子性界面活性_使防止顆粒再次附著的效果得到某^ 程度的改善’但是由於該清潔賴乎不具有_性,故而 顆粒除去性不充分,清潔性不充分。 【發明内容】 因此’本發明之目的在於提供一種磁光碟基板、平面 顯示器基板及光罩基板等電子㈣用崎_,該清潔 可對磁光碟基板、平面顯Μ基板及光罩絲等電子材料 基板的表面賦予輕的㈣性,而不會損及該等基板表面 的平L·}·生並且該潔劑藉由使用界面活性劑而使自基板 „顆粒的分散性提高’從而實現了優異的顆粒除 去性,藉此’可提高製造咖良率,並且可實現能夠在短 200923072 時間内完成清潔的效率極高的高度清潔。 本發明者們為了解決上述課題而進行銳意研究 ’結果 f現’根據清潔劑在使用時的pH值的不同,存在較佳的 (oxidation reduction potential > ORP), 達成了本發明。 即,本發明是: (第一發明)一種電子材料用清潔劑,其含有界面活 陡劑(A)’該清賴的特徵在於,於用作清雜時的有效 成分漠度下、25°C下的pH值及氧化還原電位(v)[單位 為mV,vsSHE]滿足下述數式(j ); VS-38.7χρΗ 值 + 550 ( 1) (第二發明)一種電子材料用清潔液, 性劑U)’該清潔液的特徵在於,有效成分濃度為〇〇= ΐ量百分比),25°c下的ΡΗ值及氧化還原電位 (V) I早位為mV,VSSHE]滿足下述數式(1); ·38.7χρΗ 值 + 550 ( 1) (第三發明)一種電子材料的清潔方法,其在 潔液中對電子材料進行清潔;以及 、*上心月 (第四發明種電子龍的製造方法, 上述清潔方法來對電子材料進行清潔的步驟。八 本發明的清潔劑具有下述優點:對在製 (尤其是磁錢用朗基板錢經實施Ni_p電鑛的二 =銘基板)、平面顯示器基板、及光罩基板等^材 步驟中成為問題的微細顆粒的清紐優異,可在短時= 200923072 兩效率地進行清潔,而不會對電子材料表面造成損傷 (damage ) ° 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例’並配合所附圖式’作詳細說 明如下。 【實施方式】 一 Μ電子材料為磁光碟用玻璃基板、平面顯示器基板或 光罩基板時,本發明之第一發明的清潔劑於用作清潔液時 的,效成分濃度下、25。〇下的ΡΗ值較好的是1〜13,更好 的是1〜5或8〜13,特別好的是丨〜4或9〜13,最好的是 1 3或10〜13。當pH值在該範圍内時,清潔劑具有適度 的蝕刻性而不會損害基板的平坦性,並且容易發揮出防止 ,細,粒再次附著性優異的效果。同樣就效果的觀點而 菖電子材料為磁光碟基板用銘基板時,上述pH值較 好的是5〜13 ’更好的是6〜12,特別好的是6 5〜1;1 好的是7〜1〇。 另外,尤其是當被清潔物為後述電子材料的研削步驟 ^研^步驟中所使用的氧化鈽時,清潔液較好的是酸性, j清潔物為氧倾、賴膠賴石時,清潔液較好的是 驗性。 合本發明的清潔劑含有界面活性劑(A),並且視需要而 相同,(較好的是離子交換水或超純水,以下的水亦與此 本發明的清潔劑的有效成分濃度通常為 1 Wt0/o 〜1〇〇 200923072 =%,較好的是2%〜篇(以下’只要無特別說明則% 不wt%) ’當將本發明的清潔劑用作清潔液時,通常用 稀釋。而且,本發明的清潔劑用作清潔液時的有 效。成为濃度較好的是_%〜15%,更好的是G眺〜 10/〇。另外,當清潔劑的有效成分濃度為1%〜15。/。時,可 此濃度來用作清潔液。另外,本發明中之有效成分 是才曰除了水以外的成分。 久錄ίί7者們為了提高電子材料的清潔性而對清潔液的 各種^性值與清雜之__崎了銳意研究,結果發 菩邊月潔液的ΡΉ值及氧化還原電位會對清潔性產生較大 二二’本發明者們關於清潔液的ρΗ值及清潔液的氧化還 二立1上限值(可發揮效果的上限值)積累了各種資料 析’結果魏,提供下料舰之域的清潔劑 : 較先刖有明顯改善的清潔性效果,即,該清潔液 二:滿足下述數式⑴的氧化還原電位(V) [25。(:下 的值,單位為mV,vsSHE]。 -38.7χρΗ 值 + 550 (ι) 例如’右阳值為2時的氧化還原電位(V)小於等於The problem that the coarse particles of the field J adhere to the surface of the substrate may cause serious problems. Further, in the Japanese Patent Laid-Open Publication No. Hei 43-791791, the specific component preparation of the above detergent composition is not described. Further, the cleaning agent proposed in Japanese Patent Publication No. 2001-276759 is a cleaning liquid in which argon fluoride and ozone are dissolved, and when the cleaning agent is used, it is expected to be firmly adhered by the side. The effect of particle removal on the surface of the substrate, but there is a problem in that the cleaning liquid contains fluorine ions, which causes a huge cost on the waste water, and, because the etching liquid is too etched, it is cleaned. It will damage the flatness of the substrate. By making the dynamic potential (Han Potential) of the glass substrate and the surface of the abrasive grain a negative value, it is possible to prevent the particles from adhering again, but the prevention effect is insufficient. In addition, in the cleaning agent proposed in Japanese Laid-Open Patent Publication No. 2002-212597, the effect of preventing the particles from reattaching can be improved by using an anionic interface activity. Since it does not have a _ property, the particle removal property is inadequate, and the cleaning property is inadequate. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an electron (four) using a magneto-optical disk substrate, a flat display substrate, and a photomask substrate, which can be used for electronic materials such as a magneto-optical disk substrate, a flat display substrate, and a photomask wire. The surface of the substrate imparts light (four) properties without damaging the flat surface of the substrate and the cleaning agent is excellent in the dispersion of the particles from the substrate by using a surfactant. The particle removability, whereby the manufacturing rate can be improved, and the highly efficient high-cleaning which can be cleaned in a short time of 200923072 can be realized. The present inventors conducted intensive research to solve the above problems. The present invention has been achieved in accordance with the difference in the pH of the detergent at the time of use. The present invention is: (First Invention) A cleaning agent for electronic materials, The interface containing the active stabilizer (A)' is characterized by the pH value at the 25 ° C and the redox potential (v) when used as the active component in the presence of impurities. mV, vsSHE] satisfies the following formula (j); VS-38.7χρΗ value + 550 (1) (Second invention) A cleaning liquid for electronic materials, a agent U) 'The cleaning liquid is characterized by an active ingredient concentration For 〇〇 = percentage of )), the ΡΗ value at 25 °c and the oxidation-reduction potential (V) I are mV in the early position, VSSHE] satisfies the following formula (1); · 38.7 χρΗ value + 550 ( 1) ( A third invention relates to a method for cleaning an electronic material, which cleans an electronic material in a cleaning liquid; and, *, a method of manufacturing the electronic dragon of the fourth invention, the cleaning method for cleaning the electronic material The cleaning agent of the present invention has the following advantages: it becomes a step in the manufacturing process (in particular, the second substrate of the Ni_p electric ore), the flat display substrate, and the photomask substrate. The fine particles of the problem are excellent in cleaning, and can be efficiently cleaned in a short time = 200923072 without causing damage to the surface of the electronic material. ° The above and other objects, features and advantages of the present invention are more apparent. Easy to understand 'the following is a preferred embodiment' and The present invention will be described in detail below. [Embodiment] When the electronic material is a glass substrate for a magneto-optical disk, a flat display substrate or a photomask substrate, the cleaning agent of the first invention of the present invention is used as a cleaning liquid. The concentration of the effect component is 25. The ΡΗ value of the underarm is preferably 1 to 13, more preferably 1 to 5 or 8 to 13, particularly preferably 丨 4 or 9 to 13, and the best is When the pH is within this range, the detergent has an appropriate etching property without impairing the flatness of the substrate, and is easy to exhibit an effect of being fine and excellent in particle re-adhesion. Similarly, from the viewpoint of the effect, when the electronic material is a substrate for a magneto-optical disk substrate, the above pH value is preferably 5 to 13', more preferably 6 to 12, particularly preferably 6 5 to 1; 7~1〇. In addition, especially when the object to be cleaned is cerium oxide used in the grinding step of the electronic material described later, the cleaning liquid is preferably acidic, and the cleaning liquid is oxygen raking, lysing lye, cleaning liquid It is better to test. The cleaning agent of the present invention contains the surfactant (A) and is the same as needed (preferably ion-exchanged water or ultrapure water, the following water is also the active ingredient concentration of the cleaning agent of the present invention is usually 1 Wt0/o ~1〇〇200923072=%, preferably 2%~ articles (hereinafter '% unless otherwise specified, % not wt%) 'When the cleaning agent of the present invention is used as a cleaning liquid, it is usually diluted Moreover, the cleaning agent of the present invention is effective as a cleaning liquid. The concentration is preferably _% to 15%, more preferably G 眺 10 10 /〇. In addition, when the concentration of the active ingredient of the cleaning agent is 1 In the case of %~15%, the concentration can be used as a cleaning liquid. In addition, the active ingredient in the present invention is a component other than water. The recording liquid is used to improve the cleanliness of electronic materials. The various values of the ^ and the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And the oxidation of the cleaning solution is also equal to the upper limit of 1 (the upper limit of the effect) Tired of various data analysis 'Result Wei, providing a cleaning agent for the domain of the ship: The cleaning effect is significantly improved, that is, the cleaning liquid 2: the oxidation-reduction potential (V) satisfying the following formula (1) [25. (: value below, the unit is mV, vsSHE). -38.7χρΗ value + 550 (ι) For example, when the right positive value is 2, the redox potential (V) is less than or equal to

炎mV ’ pH值為5時的(v)小於等於356 5 mV,pH ,時的⑺小於等於163.0mV,PH值為13時的(V) ί於46fmV’則可發揮出本發明的效果。 斜幻:氧化還原電位(25 C )*滿足數式(1 ),則會顯著 =刻基板表面而損害表面的平坦性,而且顆粒除去性變 i,故而不佳。 11 200923072 就對電子材料的'翁电^ 點而言,本發明的:主度钱刻性以及對顆粒的清潔性的觀 潔劑,特別好的θ t絜”丨中,更好的是滿足數式(2)的清 V<如Λ足數式⑶的清潔劑。 =38.7_ 值+ 45〇 %38.7柳值+ 350 (3) 方法氧化奴電位(V)刊心下所述的公知 <氧化還原電位的測定方法〉 化還極(氣化銀電極)所構成的氧When the pH value of the pH is 5, (v) is 356 5 mV or less, and when pH is (7), it is 163.0 mV, and when the pH is 13, (V) is 46 fmV', the effect of the present invention can be exhibited. Inclination: The oxidation-reduction potential (25 C )* satisfies the formula (1), which significantly marks the surface of the substrate and impairs the flatness of the surface, and the particle removal property becomes i, which is not preferable. 11 200923072 As far as the 'Electric material' of the electronic material is concerned, the cleaning agent of the present invention and the cleaning property of the particles are particularly good in θ t絜", and it is better to satisfy The formula (2) is clear V < such as the cleaning agent of the formula (3). = 38.7_ value + 45〇% 38.7 willow value + 350 (3) Method Oxidation potential (V) The well-known < Method for measuring oxidation-reduction potential > Oxygen formed by remelting (vaporized silver electrode)

古π \復電極(例如,型號:PST_5421C,T0A DKK 位:)’測^25ΐ的清潔液的電位值(V1)。將電 mV,2m、參照電極(氯化銀電極)的單極電位差(199 相加’可求n潔液的氧化還原電位(mV, ί位v例如,當電位值(V1)為-1〇〇mM,氧化還原 m ,vsSHE)為-100+199 = +99 mV。 本發明的清潔劑的必要成分即界面活性劑(A)可列 舉:非離子(nonion)性界面活性劑⑷)、陰離子(心⑽) !·生界面活性劑(A-2)、陽離子(cati〇n )性界面活性劑(A_3 ) 以及兩性界面活性劑(A-4)。 用於本發明的清潔劑中的非離子性界面活性劑(Ad) 可列舉··環氧烷(alkylene oxide)加成型非離子性界面活 性劑(A-la)、以及多元醇型非離子界面活性劑(A」 等。 (A-la)可列舉:高級醇(碳數為8〜18)的環氧烷 •12· 200923072 (碳數為2〜4)(每一個活性氫的加成莫耳數為1〜30)加 成物,烧基(碳數為卜⑵苯酴的環氧⑽(每一個活 性氫的加,莫耳數為丨〜⑽)加成物,脂肪酸(碳數為8 〜18)的環氧乙⑨(每一個活性氫的加成莫耳數為】〜叫 加成物’脂肪族胺(碳數為6〜24)的環氧燒加成物(每 一個活性氫的加成莫耳數為1〜30),聚丙二醇(分子量為 200〜4000)的環氧乙烷(每一個活性氫的加成莫耳數為【 〜5〇)加成物以及聚氧乙埽(每—個活性朗加成莫耳數 為1〜30)^基(碳數為卜則,山梨糖騎單月 桂酸賴魏乙烧(加成莫耳數為H)加成物、山梨 糖醇酐單油_的環氧乙燒(加成莫耳數為1〜30)加成 物等多元(2〜8元或2〜8元以上)醇(碳數為2〜3〇)之 脂?酸(碳數為8〜24) _環氧乙絲成物(每一個活 性氫的加成莫耳數為1〜3〇)等。The ancient π \ complex electrode (for example, model: PST_5421C, T0A DKK bit:) 'measures the potential value (V1) of the cleaning liquid of 25 ΐ. The electric potential mV, 2m, and the reference electrode (silver chloride electrode) unipolar potential difference (199 is added ' can be used to determine the redox potential of the n clean solution (mV, ί bit v, for example, when the potential value (V1) is -1〇 〇mM, redox m, vsSHE) is -100+199 = +99 mV. The essential component of the detergent of the present invention, that is, the surfactant (A), may be exemplified by a nonionic surfactant (4)) and an anion. (Heart (10))! Raw surfactant (A-2), cationic (cati〇n) surfactant (A_3), and amphoteric surfactant (A-4). The nonionic surfactant (Ad) used in the detergent of the present invention may be an alkylene oxide addition nonionic surfactant (A-la), and a polyol type nonionic interface. The active agent (A), etc. (A-la) can be exemplified by higher alcohol (carbon number 8 to 18) alkylene oxide • 12· 200923072 (carbon number 2 to 4) (addition of each active hydrogen The number of ears is 1~30), the adduct, the carbon number is (the carbon number is (2) benzoquinone epoxy (10) (addition of each active hydrogen, the molar number is 丨~(10)), the fatty acid (carbon number is 8 to 18) Epoxy B 9 (additional molar number of each active hydrogen is 】 ~ called adduct 'aliphatic amine (carbon number 6 to 24) epoxy burning adduct (each active Hydrogen addition molar number is 1~30), polypropylene glycol (molecular weight 200~4000) ethylene oxide (additional molar number of each active hydrogen is [~5〇) adduct and polyoxygen Acetyl (each activity is added to the molar number of 1~30) ^ base (carbon number is Bu, sorbose riding lauric acid Lai Weiyi (additional molar number is H) adduct, Sorbitol single oil _ epoxy B (Additional molar number is 1~30) Additives and other multi-components (2~8 yuan or more than 2~8 yuan) of alcohol (carbon number is 2~3〇) of fat? Acid (carbon number is 8~24) _ Epoxy Ethylene (the molar amount of each active hydrogen is 1 to 3 〇) and the like.

L (A lb)可舉.甘油單硬脂_旨、甘油酸醋、 山梨糖醇酐單月桂酸醋、山梨糖醇酐單油酸醋等多元(2 或=Γ以上)醇(碳數為2〜3〇)的脂肪酸(碳 ,為8〜24) S日’月桂酸單乙_胺、月桂酸二 等脂肪酸烷醇醯胺等。 (^-1)中,就清潔性的觀點而言,較好的 , 1G〜W的環氧烧(碳數為2〜3) 二力:t莫耳數為2,)加成物、繼 出私衣》ΐ '舌性氯的加成莫耳數為2〜20)加 成物、以及脂肪族胺(碳數為8〜18)的環氧烧加成物(每 200923072 一個活性氫的加成莫耳數為2〜20)。 陰離子性界面活性劑(A-2)可列舉:古 子性界面活性劑(A_2a)、以及低 陰離 劑(A_2b)。 軒料面活性 高分子型陰離子性界面活_ (A句舉 選自,磺酸(鹽)基、硫酸醋(鹽)基、•醋H有 膦;(鹽)基以及竣酸(鹽)基所組成的族群d、 種土團,且重,平均分子量(以下簡稱為勤)為^⑻ 〜800,_的③分子型陰離子性界面活性劑。 子中具有至少兩“ (A-2a-l)具树酸(鹽)基的高分子型陰離子性 面活性劑:L (A lb) can be exemplified by glycerol monostearyl glycerin, glyceric acid vinegar, sorbitan monolaurin vinegar, sorbitan monooleic acid vinegar, etc. (2 or more Γ above) alcohol (carbon number is 2~3〇) fatty acids (carbon, 8~24) S-day 'lauric acid monoethylamine, lauric acid second-class fatty acid alkanolamine and the like. In (^-1), from the viewpoint of cleanability, it is preferred that 1 G to W is epoxy-fired (carbon number is 2 to 3). Two-force: t-mole number is 2,) adduct, succession私私衣》ΐ 'Additional molars of tongue chlorine 2 to 20) Additives, and aliphatic amines (carbon number 8~18) of epoxy burned adducts (per active hydrogen per 200923072) The addition of moles is 2 to 20). Examples of the anionic surfactant (A-2) include an ancient surfactant (A_2a) and a low anion (A_2b). Xuan material surface active polymer type anionic interface activity _ (A sentence selected from the group consisting of sulfonic acid (salt) base, sulfuric acid vinegar (salt) base, • vinegar H with phosphine; (salt) base and citrate (salt) base The group d, the soil group, and the heavy, average molecular weight (hereinafter referred to as diligent) are 3 (8) to 800, _ of 3 molecular anionic surfactants. There are at least two "(A-2a-l) a polymeric anionic surfactant having a sulphate (salt) group:

聚苯乙稀俩、苯乙寧苯乙利酸共聚物、聚口_(甲 基)丙烯酿基絲_2,2_二甲基乙俩}、2_(甲細稀酿基胺 基H基乙俩/苯乙料聚物、2_(甲基)丙婦酿基胺 基-2,2-二甲基乙續酸/丙烯酿胺共聚物、2_(甲基)丙雜基 胺基-2,2-二甲基乙續酸/(甲基)丙稀酸共聚物、2_(甲基)丙稀 酿基胺基-2,2_二甲基乙績酸/(甲基)丙稀酸/丙婦酿胺共聚 物、2-(甲基)丙烯醯基胺基_2,2_二甲基乙磺酸/苯乙烯/丙烯 醯胺共聚物、2·(甲基)丙烯醯基胺基-2,2-二甲基乙磺酸/苯 乙稀/(甲基)丙稀酸共聚物、萘續酸甲搭縮合物、甲基萘續 酸甲醛縮合物、二甲基萘磺酸甲醛縮合物、蒽磺酸甲醛縮 • 14· 200923072 合物、三聚氰胺續酸 縮合物等; 甲醛縮合物以及苯胺磺酸·苯酚-甲醛 界面活性劑:、有礙酸8旨(鹽)基的高分子型陰離子性 聚{(甲基)丙埽酸 乙酯/丙烯酸2-羥美7 •絲乙醋硫酸酯}、丙烯酸2-羥基 基乙醋/甲基丙‘ 2 3酸醋共聚物及甲基轉酸2-經Polystyrene, phenethyl benzoic acid copolymer, poly-(meth)acrylic ketone 2,2_dimethylbi}, 2_(fine arylamino group H Ethylene/phenyl ethane polymer, 2_(methyl)propyl bromoamino-2,2-dimethylglycolic acid/acrylamide copolymer, 2_(methyl)propanylamino-2 , 2-dimethylglycolic acid/(meth)acrylic acid copolymer, 2_(methyl)propyl arylamino-2,2-dimethylanilic acid/(meth)acrylic acid / propylene glycol amine copolymer, 2-(methyl) propylene decylamino 2,2 dimethyl ethane sulfonic acid / styrene / acrylamide copolymer, 2 · (meth) acryl decyl amine Benzene-2,2-dimethylethanesulfonic acid/styrene/(meth)acrylic acid copolymer, naphthalene acid methyl condensate, methylnaphthalene acid formaldehyde condensate, dimethylnaphthalenesulfonic acid Formaldehyde condensate, oxime sulfonic acid formaldehyde condensate • 14· 200923072 compound, melamine acid condensate, etc.; formaldehyde condensate and aniline sulfonic acid·phenol-formaldehyde surfactant: hinder the acid 8 (salt) base Molecular anionic poly {(methyl)propionate ethyl ester / acrylic acid 2-hydroxymei 7 • silk ethyl acetate sulfate}, 2-hydroxyethyl acrylate Propionic '23 vinegar copolymer and methacrylic acid 2 by rotation

丙烯酸2_輕基乙㈣的^2:醋硫酸醋共聚物、聚{(甲基) 取备^t }的硫酸酯化物、聚{(甲基)丙烯醯氧基 (甲基㈣醯氧基聚氧乙婦硫酸酷/丙婦 =:以及纖維素、甲基纖維素或乙基纖維素: (A-2a-3)具有磷酸酯(鹽)基的高分子型陰離子性 界面活性劑: 聚{(甲基)丙稀酸2-羥基乙酯磷酸酯}、丙烯酸2·羥基 乙酯/丙烯酸2-羥基乙酯磷酸酯共聚物及甲基丙烯酸孓二 基乙S曰/甲基丙稀酸2-經基乙醋填酸g旨共聚物、聚((甲義) 丙烯酸2·經基乙酯}的碟酸酯化物、聚{(甲基)丙婦酿氧基 聚氧乙烯磷酸酯}、(甲基)丙烯醯氧基聚氧乙烯磷酸酯/丙烯 酸共聚物’以及纖維素、甲基纖維素或乙基纖維素的磷酸 酯化物等; (A-2a-4)具有膦酸(鹽)基的高分子型陰離子性界 面活性劑: 聚{膦酸(甲基)丙烯醯氧基乙酯}、丙烯酸2-羥基乙酉旨/ 膦酸丙烯酿氧基乙酯共聚物及甲基丙烯酸2-羥基乙醋/麟 200923072 酸甲基丙烤酿氧基乙醋共聚物、萘膦酸甲搭縮合物、甲基 萘膦酸甲_合物、二甲基萘膦酸甲_合物、蕙膦酸曱 醛縮合物以及笨胺膦酸-苯酚-甲醛縮合物等; (A-2a-5)具有羧酸(鹽)基的高分子型陰離子性界 面活性劑: 聚(甲基)丙烯酸、(甲基)丙烯酸_順丁烯二酸共聚物、 (曱基)丙烯酸-亞甲基丁二酸共聚物、(曱基)丙烯酸_反丁烯 f 一酸共聚物、(曱基)丙烯酸/乙酸乙烯酯共聚物及曱基丙烯 1 酸2_羥基乙酯/(甲基)丙烯酸共聚物、聚{(甲基)丙烯酸2- 經基乙醋}的羧甲基化物、羧甲基纖維素、羧甲基甲基纖維 素、叛曱基乙基纖維素、苯甲酸甲搭縮合物以及苯甲酸_ 苯酚-曱醛縮合物等。 就防止顆粒再次附著性以及低泡性的觀點等而言,高 分子型陰離子性界面活性劑(A-2a)的Mw較好的是1,〇〇〇 〜800,〇〇〇,更好的是1,2〇〇〜4〇〇,〇〇〇,特別好的是1,5〇〇 〜80,000 ’最好的是2,〇〇〇〜40,000。本發明之Mw是利用 U 凝膠渗透層析法(以下,簡稱為GPC ( gel-permeationAcrylic acid 2_light base (4) ^2: vinegar sulfate vinegar copolymer, poly{(methyl) taken ^t } sulphate, poly {(meth) propylene oxime (methyl (tetra) decyloxy Polyoxyethylene acesulfate acesulfame / propylene == and cellulose, methyl cellulose or ethyl cellulose: (A-2a-3) polymeric anionic surfactant with phosphate (salt) group: poly {(Methyl)acrylic acid 2-hydroxyethyl phosphate}, 2, hydroxyethyl acrylate / 2-hydroxyethyl acrylate phosphate copolymer and dimethyl diethethyl sulfonium methacrylate 2-Diethyl acetoacetate acid-based copolymer, poly((meth)acrylic acid 2·transethyl ester} disc esterate, poly {(methyl) propyl ethoxylated polyoxyethylene phosphate} , (meth) propylene oxiranoxy polyoxyethylene phosphate / acrylic acid copolymer ' and phosphate ester of cellulose, methyl cellulose or ethyl cellulose; etc.; (A-2a-4) has phosphonic acid (salt Base polymer anionic surfactant: poly{phosphonic acid (meth) propylene methoxyethyl ester}, 2-hydroxyethyl acrylate/phosphonic acid propylene ethoxyethyl ester copolymer and methacrylic acid 2 -hydroxyl Ethyl vinegar / Lin 200923072 acid methyl propylene roasting oxyacetate copolymer, naphthylphosphonic acid methyl condensate, methyl naphthalene phosphonium methylate, dimethyl naphthalene phosphonium methylate, phosphinic acid Furfural condensate and strepidophosphonic acid-phenol-formaldehyde condensate; (A-2a-5) polymer type anionic surfactant having a carboxylic acid (salt) group: poly(meth)acrylic acid, (A) Acrylic acid-maleic acid copolymer, (mercapto)acrylic acid-methylene succinic acid copolymer, (mercapto)acrylic acid_fubutene f-acid copolymer, (mercapto)acrylic acid/vinyl acetate Ester copolymer and mercaptopropene 1-acid 2-hydroxyethyl ester/(meth)acrylic acid copolymer, poly{(meth)acrylic acid 2-ethyl ketone acetate carboxymethylate, carboxymethyl cellulose, carboxy Methylmethylcellulose, stearyl ethylcellulose, benzoic acid methyl condensate, benzoic acid _ phenol-furfural condensate, etc. In terms of preventing particle re-adhesion and low foaming, etc., The molecular weight of the molecular anionic surfactant (A-2a) is preferably 1, 〇〇〇 〜 800, 〇〇〇, more preferably 1, 2 〇〇 〜 4 〇〇, 〇〇〇, 1,5〇〇 ~80,000 is not good 'is preferably 2, 〇〇〇~40,000. Mw U of the present invention is the use of gel permeation chromatography (hereinafter abbreviated as GPC (gel-permeation

chromatography)),以聚環氧乙烷作為基準物質而於4〇°C 下測定的。具體而言,例如使用下述設備來進行測定,即, 裝置本體:HLC-8120(東曹(Tosoh)股份有限公司製造); 管柱:東曹股份有限公司製造之TSKgel a6000、G3000 PWXL ;檢測器:内置於裝置本體的示差折射檢測器;溶 離液:0.5%乙酸鈉.水/曱醇(體積比為70/30);溶離液流 量:1.0ml/min ;管柱溫度:40°C ;樣品·· 0.25%的溶離液 16 · 200923072 溶液,注入量.200以1;標準物質··東曹股份有限公司製 造的TSK標準聚環氧乙烷(TSK STANDARD POLYETHYLENE OXIDE);資料處理軟體:Gpc_8〇2〇 model Π (東曹股份有限公司製造)。 低分子型陰離子性界面活性劑(A_2b)可列舉:低分 子型磺酸系界面活性劑(A-2b-l)、低分子型硫酸酯系界面 活性劑(A-2b-2 )、低分子型脂肪酸系界面活性劑 (A-2b-3)、以及低分子型磷酸g旨系界面活性劑(A_2b_4) 等分子量(Mw或基於結構而得之計算值的分子量)小於 1,000的陰離子性界面活性劑。 陰離子性界面活性劑中的磺酸系界面活性劑(Ajbd) 可列舉:碳數為6〜24之醇的磺基丁二酸(單、二)酯(鹽)、 碳數為8〜24之α-烯烴的磺酸化物(鹽)、具有碳數為8 14之烧基的烧基苯續酸(鹽)、石油續酸醋(鹽) (petroleum suif0nate)、甲苯磺酸(鹽)、二甲苯磺酸(鹽) 以及異丙苯磺酸(鹽)等。陰離子性界面活性劑中的磺酸 系界面活性劑(A-2b-l)的具體例可列舉:二辛基磺基丁 一酸(鹽)、對曱苯磺酸(鹽)、鄰甲苯磺酸(鹽)、間二甲 笨磺酸(鹽)以及對二甲苯磺酸(鹽)等。 低分子型硫酸酯系界面活性劑(A_2b_2)可列舉:碳 數為8〜18之脂肪族醇的硫酸醋(鹽)、碳數為8〜Μ之脂 肪族醇之環氧乙烷1莫耳〜1〇莫耳加成物的硫酸酯(鹽)、 硫酸化油(鹽)、硫酸化脂肪酸酯(鹽)以及硫酸化烯烴(鹽) 等。低分子型硫酸酯系界面活性劑(A_2b_2)的具體例可 •17· 200923072 列舉:2-乙基己醇硫酸酯(鹽)、辛醇硫酸酯(鹽)、丨,;^· 癸二醇二硫酸醋(鹽)以及月桂醇(lauryl alcohol)之環 氧乙烷(5莫耳)加成物的二硫酸酯(鹽)等。 低分子型脂肪酸系界面活性劑(A-2b-3)可列舉:碳 數為8〜18的脂肪酸(鹽)、以及碳數為8〜18之脂肪族醇 的醚羧酸(鹽)等。低分子型脂肪酸系界面活性劑(A-2b-3) 的具體例可列舉:正辛酸(鹽)、2-乙基己酸(鹽)、正壬 酸(鹽)、異壬酸(鹽)、油酸(鹽)以及硬脂酸(鹽)等。 低分子型磷酸酯系界面活性劑(A-2b-4)可列舉:碳 數為8〜24之高級醇的磷酸(單、二)酯(鹽)、以及碳數 為8〜24之高級醇的環氧乙烷加成物的磷酸(單、二)酯 (鹽)等。低分子型磷酸酯系界面活性劑(A-2b-4)的具 體例可列舉:月桂醇單磷酸酯(鹽)、月桂醇之環氧乙烷(5 莫耳)加成物的磷酸單酯(鹽)、以及辛醇二磷酸酯(鹽) 等。 對(A-2)形成鹽時的對離子並無特別限定,通常為: 鹼金屬(鈉及鉀)鹽、銨鹽、一級胺(曱胺、乙胺及丁胺 等院基胺’單乙醇胺,以及胍(guanidine)等)鹽、二級 胺(二甲胺、二乙胺及二丁胺等二烷基胺以及二乙醇胺等) 鹽、三級胺{三曱胺、三乙胺及三丁胺等三烷基胺,三乙醇 胺,N-甲基二乙醇胺,以及1,8-二氮雜雙環[5.4.0]-7-十一 埽(l,8-diazabicyclo[5,4,0]-7_undecene,DBU)、1,5-二氮 雜雙環[4.3.0]-5-壬稀(l,5-diazabicyclo[4.3.0]-5-nonene ’ DBN ) 或 1,4-二氮雜雙環[2.2.2]辛烷 •18· 200923072 (l,4-diazabicyclo[2,2,2]octane,DABCO),1H-P米0坐、2- 甲基-1Η-_β坐、2-乙基-1Η-_β坐、4,5_二氯米峻、2-甲 基-4,5-二氫_1Η·咪唑、1,4,5,6·四氫嘧啶、16(4)-二氫嘧啶 等}鹽以及四級銨(四烧基銨等)鹽。這些鹽中,就對基板 的金屬污染的觀點而言’較好的是銨鹽、一級胺鹽、二級 胺鹽、三級胺鹽以及四級銨鹽,特別好的是三級胺鹽及四 級敍鹽’最好的是DBU、DBN、DABCO、N-甲基二乙醇 胺、1H-咪唑、2-甲基-1H-咪唑以及2_乙基-味唑的鹽。 ( 就防止顆粒再次附著性的觀點而言,陰離子性界面活 性劑(A-2)中較好的是高分子型陰離子性界面活性劑 (A-2a)、低分子型磺酸系界面活性劑(八-㉛-丨)、低分子 型硫酸_'界面活㈣KA_2b_2)、以及低分子型脂肪酸系 界面活性劑(AI3),更好的是(Α_2&)、(Α_21>1)以及 (A-2b-2) ’特別好的是聚丙烯酸(鹽)、聚苯乙烯磺酸 (鹽)、萘%酸福馬林縮合物的鹽、丙稀醯胺_2_甲基丙磺 酸/丙稀酸共聚物的鹽、甲基丙烯酿氧基聚氧乙烯硫酸醋/ 〇 丙烯酸共聚物的鹽、辛基苯磺酸(鹽)、對甲苯磺酸(鹽)、 間-甲苯㉖酸(鹽)以及2_乙基己醇硫酸醋(鹽)。 其中,(A-2)可單獨使用,亦可併肖兩種或兩種以上。 就顆粒的分散性的觀點而言,更好的是併用兩種或兩種以 上。 陽離子性界面活性劑(A_3)可列舉:四級錢鹽型的 界面活性劑(A-3a) {例如,烧基(碳數為卜叫三甲基 娜、-烧基(¾數為二曱基錄鳋、含氮環的四 -19- 200923072 級銨鹽、含聚(加成莫耳數為2〜15)氧乙 〜4)鏈的四級銨鹽、烷基(碳| (碳數為2 系界面活性劑(A-3b) {例如,碳數為3〜9(^以及按 級胺、碳數為3〜90的脂環式(含有含氮雜環族三 ,碳數為3〜90的含雜燒基之三級胺‘、=、 機酸鹽}等。 、饿酸鹽或有Chromatography)), measured at 4 ° C using polyethylene oxide as a reference material. Specifically, for example, the apparatus is used to perform measurement, that is, the apparatus body: HLC-8120 (manufactured by Tosoh Co., Ltd.); the column: TSKgel a6000, G3000 PWXL manufactured by Tosoh Corporation; Device: differential refractive index detector built in the device body; dissolving solution: 0.5% sodium acetate. water/sterol (volume ratio 70/30); eluent flow rate: 1.0 ml/min; column temperature: 40 ° C; Sample·· 0.25% dissolving solution 16 · 200923072 Solution, injection amount: 200 to 1; standard material · TSK standard polyethylene oxide (TSK STANDARD POLYETHYLENE OXIDE) manufactured by Tosoh Corporation; data processing software: Gpc_8 〇2〇model Π (made by Tosoh Corporation). Examples of the low molecular type anionic surfactant (A_2b) include a low molecular type sulfonic acid type surfactant (A-2b-1), a low molecular type sulfate type surfactant (A-2b-2), and a low molecular weight. Anionicity of a molecular weight (Mw or a molecular weight calculated based on the structure) such as a fatty acid-based surfactant (A-2b-3) and a low-molecular-weight phosphate g-based surfactant (A_2b_4) of less than 1,000 Surfactant. The sulfonic acid-based surfactant (Ajbd) in the anionic surfactant may, for example, be a sulfosuccinic acid (mono- and di-) ester (salt) having a carbon number of 6 to 24, and have a carbon number of 8 to 24. a sulfonate (salt) of an α-olefin, a benzoic acid (salt) having a carbon number of 8 14 , a petroleum vinegar (salt), a toluenesulfonic acid (salt), a Toluenesulfonic acid (salt) and cumenesulfonic acid (salt) and the like. Specific examples of the sulfonic acid-based surfactant (A-2b-1) in the anionic surfactant include dioctylsulfobutanoic acid (salt), p-toluenesulfonic acid (salt), and o-toluenesulfonate. Acid (salt), m-dimethyl sulfonic acid (salt), and p-xylene sulfonic acid (salt). The low molecular type sulfate ester type surfactant (A_2b_2) may, for example, be a sulfuric acid vinegar (salt) of an aliphatic alcohol having a carbon number of 8 to 18, or an ethylene oxide 1 molar of an aliphatic alcohol having a carbon number of 8 to Μ. Sulfate (salt), sulfated oil (salt), sulfated fatty acid ester (salt), and sulfated olefin (salt) of the oxime additive. Specific examples of the low molecular type sulfate ester surfactant (A_2b_2) can be used. • 17· 200923072 List: 2-ethylhexanol sulfate (salt), octanol sulfate (salt), hydrazine, ; A disulfate (salt) of an ethylene oxide (5 mol) adduct of disulfate (salt) and lauryl alcohol. The low molecular weight fatty acid type surfactant (A-2b-3) may, for example, be a fatty acid (salt) having a carbon number of 8 to 18 and an ether carboxylic acid (salt) having an aliphatic alcohol having a carbon number of 8 to 18. Specific examples of the low molecular weight fatty acid type surfactant (A-2b-3) include n-octanoic acid (salt), 2-ethylhexanoic acid (salt), n-decanoic acid (salt), and isodecanoic acid (salt). , oleic acid (salt) and stearic acid (salt). Examples of the low molecular type phosphate ester surfactant (A-2b-4) include phosphoric acid (mono- and di) esters (salts) of higher alcohols having a carbon number of 8 to 24, and higher alcohols having a carbon number of 8 to 24. Phosphate (mono- and di) esters (salts) of ethylene oxide adducts, and the like. Specific examples of the low molecular type phosphate ester surfactant (A-2b-4) include a monoester of a lauryl alcohol monophosphate (salt) and an ethylene oxide (5 mol) adduct of lauryl alcohol. (salt), and octanol diphosphate (salt) and the like. The ion to be formed when the salt is formed in (A-2) is not particularly limited, and is usually an alkali metal (sodium and potassium) salt, an ammonium salt, or a primary amine (amine amine, ethylamine, and butylamine, etc.) And guanidine (guanidine) and the like, salts, secondary amines (dialkylamines such as dimethylamine, diethylamine and dibutylamine, and diethanolamine, etc.) salts, tertiary amines {tridecylamine, triethylamine, and three Trialkylamine such as butylamine, triethanolamine, N-methyldiethanolamine, and 1,8-diazabicyclo[5.4.0]-7-unde (1,8-diazabicyclo[5,4,0 ]-7_undecene, DBU), 1,5-diazabicyclo[4.3.0]-5-oxime (l,5-diazabicyclo[4.3.0]-5-nonene ' DBN ) or 1,4-diazo Heterobicyclo[2.2.2]octane•18· 200923072 (l,4-diazabicyclo[2,2,2]octane, DABCO), 1H-P m 0 sitting, 2-methyl-1Η-_β sitting, 2- Ethyl-1Η-_β sit, 4,5-dichloromethane, 2-methyl-4,5-dihydro-1Η·imidazole, 1,4,5,6·tetrahydropyrimidine, 16(4)- a salt of dihydropyrimidine or the like and a salt of a quaternary ammonium (tetraalkylammonium or the like). Among these salts, from the viewpoint of metal contamination of the substrate, preferred are ammonium salts, primary amine salts, secondary amine salts, tertiary amine salts, and quaternary ammonium salts, and particularly preferred tertiary amine salts and The fourth-grade salt is the best of DBU, DBN, DABCO, N-methyldiethanolamine, 1H-imidazole, 2-methyl-1H-imidazole and 2-ethyl-azizol. (In view of preventing re-adhesion of particles, a polymer type anionic surfactant (A-2a) and a low molecular type sulfonic acid type surfactant are preferred among the anionic surfactant (A-2). (8-31-丨), low molecular type sulfuric acid _' interface activity (4) KA_2b_2), and low molecular weight fatty acid surfactant (AI3), more preferably (Α_2&), (Α_21>1) and (A- 2b-2) 'Specially good is polyacrylic acid (salt), polystyrenesulfonic acid (salt), salt of naphthalene % acid formalin condensate, acrylamide 2 - methyl propane sulfonic acid / acrylic acid a salt of a copolymer, a salt of a methacrylic ethoxylated polyoxyethylene sulfate/acetic acid acrylate copolymer, octylbenzenesulfonic acid (salt), p-toluenesulfonic acid (salt), m-toluene 26 acid (salt), and 2_ethylhexanol sulfate vinegar (salt). Among them, (A-2) may be used singly or in combination of two or more. From the viewpoint of the dispersibility of the particles, it is more preferable to use two or more of them in combination. The cationic surfactant (A_3) may be exemplified by a quaternary salt type surfactant (A-3a) {for example, a burnt group (the carbon number is a trimethylna, a burnt base (3⁄4 is a ruthenium) Base 鳋, nitrogen-containing ring of 4-19-200923072-grade ammonium salt, quaternary ammonium salt containing poly(additional molar number 2~15) oxygen b~4) chain, alkyl group (carbon | (carbon number) Is a 2-line surfactant (A-3b) {for example, a carbon number of 3 to 9 (^ and an amine of the order, a carbon number of 3 to 90 alicyclic (containing a nitrogen-containing heterocyclic three, a carbon number of 3) ~90 of a tertiary amine containing a miscible group, ', =, acid salt}, etc.

C Ο 兩性界面活性劑(Α·4)可列舉:甜菜驗 兩性界面活性劑(A-4a) {例如,烷基(碳數e^ne)型 曱基甜菜驗、燒基(碳數為wo)醢胺燒基二 〜4)二甲基甜菜鹼、烷基(碳數為1〜3〇)二羥 為1 數為1〜30)甜菜驗、確基甜菜驗型等};胺基 面活性劑(A-4b) {例如,丙胺酸型[烷基(碳數 界 胺基丙酸型、絲(碳數為亞胺基二丙^ =) 甘胺酸(glycine )型[烧基(碳數為i〜3〇)胺基]、. 以及胺基磺酸鹽型兩性界面活性劑(A_4c){例如, 數為1〜30)牛磺酸型兩性界面活性劑等丨等。、元土(碳 就防止顆粒再次附著性的觀點而言,界面活 中較好的是陰離子性界面活_ (A_2)、以及併^ ) 性界面活性劑⑷)與⑷),更好的是併用⑷)與 (A-2)。就清潔性及起泡性的觀點而言,併用時的(H') 及(A-2)的含有比率ΚΑ_υ / ((2)】較好的是小於 於6,更好的是01〜5,特別好的是〇 2〜〇 8。 基於本發明之清潔劑的有效成分的重量,本發明的清 -20- 200923072 潔劑中的界面活性劑(A)的含量較好的是 1.5%〜1〇〇〇/0, 更好的是2〜9G%,制好的是3〜80%。 除了界面活性劑(A)以外,本發明的清潔劑可更含 有選自以下述螯合劑(eheiating agent) (b )、還原劑(匸) 以及鹼性成分(D)所組成的族群中的一種或一種以上的 成分。 f本發明的清潔劑含有螯合劑(B)時,就可提高電 < 子材料表面之清潔性的觀點以及可控制蝕刻性的觀點而言 1 更佳。另外’本發明的清潔劑藉由含有還原劑(C),可控 制對電子材料表面的蝕刻性,故而更好的是含有還原劑 (C)。本發明的清潔劑可藉由含有鹼性成分(〇)而進一 步提高對顆粒的清潔性。 [螯σ劑(B )可列舉·胺基多叛酸(鹽)(B-1) {例如, 乙一胺四乙酸(鹽)(ethylene diamine tetraacetic acid, EDTA )、二乙三胺五乙酸(鹽)(diethylene triamine pentaacetic acid ’ DTPA )、三乙四胺六乙酸(鹽)(triethylene (j tetraamine hexaacetic add,TTHA)、羥基乙基乙二胺三乙 酸(鹽)(hydroxyethyl ethylene diamine triacetic acid, HEDTA )、二經基乙基乙二胺四乙酸(鹽)(dihydroxy ethyl ethylene diamine tetraacetic acid,DHEDDA)、氮基三乙酸 (鹽)(nitrilotriacetic acid,ΝΤΑ)、經基乙基亞胺基二乙 酸(鹽)(hydroxyethyl imino diacetic acid,HIDA )、/3 -丙 胺酸二乙酸(鹽)、天冬胺酸二乙酸(鹽)、曱基甘胺酸二 乙酸(鹽)、亞胺基二丁二酸(鹽)、絲胺酸二乙酸(鹽)、 -21- 200923072 羥基亞胺基二丁二酸(鹽)、二羥基乙基甘胺酸(鹽)、天 冬胺酸(鹽)、麩胺酸(鹽)等}; 羥基羧酸(鹽)(B-2) {例如,羥基乙酸(鹽)、酒石 酸(鹽)、檸檬酸(鹽)、葡萄糖酸(鹽)等}; 環羧酸(鹽)(B-3) {例如,均苯四甲酸(鹽)、苯幷 多羧酸(鹽)、環戊烷四甲酸(鹽)等}; 醚羧酸(鹽)(B-4 )(例如,羥基丙二酸羧甲酯 (carboxymethyl tartronate)、丁二酸緩甲氧基酉旨、氧基二 丁二酸酯、酒石酸單丁二酸酯、酒石酸二丁二酸酯等); 其他羧酸(鹽)(B_5) {例如,順丁烯二酸衍生物、草 酸(鹽)等}; 膦酸(鹽)(B-6) {例如,甲基二膦酸(鹽)、胺基三(亞 甲基膦酸)(鹽)、1-羥基亞乙基-1,1-二膦酸(鹽)、乙二胺 四(亞甲基膦酸)(鹽)、1,6-己二胺四(亞甲基膦酸)(鹽)、 丙二胺四(亞曱基膦酸)(鹽)、二乙三胺五(亞甲基膦酸) (鹽)、三乙四胺六(亞甲基膦酸)(鹽)、三胺基三乙胺六(亞 甲基膦酸)(鹽)、反式-1,2-環己二胺四(亞曱基膦酸)(鹽)、 二醇醚二胺四(亞曱基膦酸)(鹽)、以及四乙五胺七(亞曱 基膦酸)(鹽)等}; 縮合磷酸(鹽)(B-7) {例如,偏磷酸(鹽)、三聚磷 酸(鹽)、六偏磷酸(鹽)等}等。 另外,上述酸的鹽可列舉上述陰離子性界面活性劑 (A-2)中所例示的鹽。而且,這些螯合劑(B)可使用一 種,或將兩種或兩種以上組合使用。 -22· fC Ο amphoteric surfactant (Α·4) can be enumerated: beet test amphoteric surfactant (A-4a) {for example, alkyl (carbon number e^ne) type sulfhydryl beet test, burning base (carbon number is wo Amidoxime base 2 ~ 4) dimethyl betaine, alkyl (carbon number 1 ~ 3 〇) dihydroxy is 1 number is 1 ~ 30) beet test, confirmed beet test, etc.; amine surface Active agent (A-4b) {for example, alanine type [alkyl (carbon number-bonded aminopropionic acid type, silk (carbon number is iminodipropyl^)) glycine type (glycine) type [alkyl base ( The carbon number is i~3〇)amino group], and the aminosulfonate type amphoteric surfactant (A_4c) {for example, the number is 1 to 30), such as a taurine type amphoteric surfactant. In the case of the meta-soil (the effect of carbon on the re-adhesion of the particles, the anionic interface is preferably _ (A_2), and the surfactant (4)) and (4)), and more preferably Use (4)) and (A-2). From the viewpoints of cleanability and foaming, the content ratios of (H') and (A-2) in combination are preferably 小于_υ / ((2)] is less than 6, more preferably 01 to 5 Particularly preferred is 〇2 to 〇8. The content of the surfactant (A) in the cleaning agent of the present invention is preferably 1.5% based on the weight of the active ingredient of the cleaning agent of the present invention. 1〇〇〇/0, more preferably 2 to 9G%, and is preferably 3 to 80%. In addition to the surfactant (A), the cleaning agent of the present invention may further contain a chelating agent selected from the following (eheiating) One or more components of the group consisting of (b), a reducing agent (匸), and an alkaline component (D). f When the cleaning agent of the present invention contains a chelating agent (B), the electricity is improved. The viewpoint of the cleanability of the surface of the sub-material and the viewpoint of controlling the etching property are better. Further, the cleaning agent of the present invention can control the etching property to the surface of the electronic material by containing the reducing agent (C), and thus It is preferred to contain a reducing agent (C). The cleaning agent of the present invention can further improve the clearing of the particles by containing an alkaline component (〇). [The chelating agent (B) can be exemplified by an amine polydox (salt) (B-1) {for example, ethylene diamine tetraacetic acid (EDTA), diethylene triamine pentaacetic acid (diethyl triamine pentaacetic acid ' DTPA ), triethylene (j tetraamine hexaacetic add (TTHA), hydroxyethyl ethylene diamine triacetic acid (salt) (hydroxyethyl ethylene diamine triacetic acid (salt) HEDTA), dihydroxy ethyl ethylene diamine tetraacetic acid (DHEDDA), nitrilotriacetic acid (ΝΤΑ), transethylidene diamine diacetic acid (hydroxy) imino diacetic acid (HIDA), /3 - alanine diacetic acid (salt), aspartic acid diacetic acid (salt), thioglycine diacetic acid (salt), iminodibutyl Acid (salt), serine diacetate (salt), -21- 200923072 hydroxyiminodisuccinic acid (salt), dihydroxyethylglycine (salt), aspartic acid (salt), bran Amino acid (salt), etc.; hydroxycarboxylic acid ( (B-2) {for example, glycolic acid (salt), tartaric acid (salt), citric acid (salt), gluconic acid (salt), etc.; cyclic carboxylic acid (salt) (B-3) {for example, homo benzene Tetraformic acid (salt), benzoquinone polycarboxylic acid (salt), cyclopentane tetracarboxylic acid (salt), etc.; ether carboxylic acid (salt) (B-4) (for example, carboxymethyl tartronate) ), succinic acid methoxy methoxy, oxy disuccinate, tartaric acid monosuccinate, tartaric acid disuccinate, etc.; other carboxylic acid (salt) (B_5) {for example, cisidine Oleic acid derivative, oxalic acid (salt), etc.; phosphonic acid (salt) (B-6) {for example, methyl diphosphonic acid (salt), aminotris (methylene phosphonic acid) (salt), 1 -hydroxyethylidene-1,1-diphosphonic acid (salt), ethylenediaminetetrakis (methylenephosphonic acid) (salt), 1,6-hexanediaminetetrakis (methylenephosphonic acid) (salt) , propylenediamine tetrakis(rhodecylphosphonic acid) (salt), diethylenetriamine penta (methylene phosphonic acid) (salt), triethylenetetramine hexa(methylenephosphonic acid) (salt), triamine Triethylamine hexa(methylene phosphonic acid) (salt), trans-1,2-cyclohexanediamine tetra (sub Phosphonic acid) (salt), glycol ether diamine tetrakis (decylene phosphonic acid) (salt), and tetraethylenepentamine hepta-(ylidenephosphonic acid) (salt), etc.; condensed phosphoric acid (salt) B-7) {For example, metaphosphoric acid (salt), tripolyphosphate (salt), hexametaphosphoric acid (salt), etc. Further, examples of the acid salt include the salts exemplified in the above anionic surfactant (A-2). Further, these chelating agents (B) may be used alone or in combination of two or more. -22· f

O 200923072 性能中,就基板的崎生控制以及清潔 以及這些的鹽,更好的是㈤WB_6)、(B(_7)m) 酸的鹽,特別好的是乙二胺四乙酸 ^ =,(,)—、二幾基乙基」胺四乙^ “;天冬胺酸二乙酸(鹽)'天冬胺酸(連「、 性二刻性控制以及清潔 ί二:的含量較好的是小於等於3〇%,更好Ϊ 疋〇.1/〇〜2〇%,特別好的是〇.3%〜2〇%。 好的 (⑽)、芳香族有機^劑()d歹;I舉脂肪族有機還原劑 (C-lc),可例示以下還原劑(。)以及其他有_原劑 有機:Ξ族ΐίί原劑(C-la)可列舉:碳數為1〜12的 , 厌数馬1〜3〇的脂肪族胺等。 酸:ί ::12的有機酸類可列舉:甲酸、乙酸、丁_ 酸=酸、”丁酸、順丁婦二酸、2_氧代丙酸、: -酸沒食子酸(_eacid)以及這些酸的鹽。另外,: -23 - 200923072 述(B-2)及(B-5)亦具有作為還原劑的效果。 碳數為1〜12的醛類可列舉:甲醛、乙醛、丙醛、以 及乙烯醛等。 碳數為6〜9的還原酮類可列舉:L-抗壞血酸 (L-ascorbic acid)、異抗壞血酸(isoascorbic acid)、L-抗 壞血酸硫酸酯、L·抗壞血酸磷酸酯、L-抗壞血酸2-葡糖苷 (L-ascorbic acid 2-glucoside)、L-抗壞血酸棕櫚酸酯、L-才几壞血酸四異棕櫚酸醋(L-ascorbyl tetraisopalmitate)、抗 壞血酸異棕櫚酸酯、異抗壞血酸(erythorbic acid)、異抗 壞血酸鱗酸酯、異抗壞血酸棕櫚酸酯、抗壞血酸四異棕櫚 酸酯(erythorbyltetraisopalmitate)以及這些酸的鹽等。 碳數為1〜30的脂肪族胺可列舉:碳數為丨〜6的烷基 胺、碳數為2〜6的院醇胺、碳數為2〜5的烧二胺、碳數 為4〜10的環狀胺、碳數為3〜15的脒(aw—)化合物、 ,及碳數為4〜3G的多(許2〜5)伸院基(碳 多(n=3〜6)胺等。 @脖碳ΐίΓ6!燒基胺可列舉:單絲料甲胺、乙胺、 二烷趣-甲胺,、以及碳數為2〜6的 坑基胺{一甲乙基甲胺、丙基甲胺 胺、丙基乙胺、以及二異丙胺等卜 一 碳數為2〜6的烷醇胺 三乙醇胺、二甲基胺dr醇胺、,乙醇胺、 二乙醇胺、2-胺基|曱基小丙醢土5基乙醇、N_甲基- ν,ν-工曱基_2_胺基乙醇及Ύ _(胺基乙基)乙醇胺、 每以及2-(2-胺基乙氧基)乙醇等。 -24- 200923072 碳數為2〜5的烷二胺可列舉:乙二胺、丙二胺、I)· 丙二胺、Μ-丁二胺、以及1,6-己二胺等。 ’ 碳數為4〜10的環狀胺可列舉:α底啶(piperidine)、 哌嗪(piperazine )、以及M_二氮雜雙環[2 2 (DABCO)等。 碳數為3〜15的脒化合物可列舉:18_二氮 [,十-稀⑽U),二氮雜雙環[43.〇= (DSN)等。 碳數為4〜30的多(n = 2〜5)伸烷基(碳數為2〜6) 多(n = 3〜6)胺可列舉:二乙三胺、三乙四胺、四乙五胺、 六乙七胺、亞胺基雙丙胺、雙(六亞甲基)三胺、以及五乙 六胺等。 芳香族有機還原劑(C-lb)可列舉:碳數為7〜12的 芳香族醛、碳數為6〜9的芳香族胺、以及碳數為6〜3〇 的盼化合物等。 碳數為7〜12的芳香族搭可列舉:苯甲酸 (benzaldehyde)、以及桂皮醛(cinnamaldehyde)等。 碳數為6〜9的芳香族胺可列舉··對苯二胺、以及對胺 基苯酚等。 峡數為6〜30的盼化合物可列舉一元紛(monohydric phenol)以及多紛(polyphenol)。一元齡可列舉:3·經基 汽酮(3-hydroxy flavone)、以及生育盼(t〇COpher〇l)( α _、 yS·、γ_、占_、卜或” _生育酚等)等。多酴可列舉:3,4,5_ 三羥基苯曱酸、鄰苯二酚(pyr〇catech〇l )、間苯二酚 -25· 200923072 (resorcinol )、對苯二酚(hydroquinone )、萘間二酚 (naphthoresorcinol)、鄰苯三盼(pyrogallol)以及間苯三 盼(phloroglucinol)等。 其他有機還原劑(C-lc)可列舉:磷系還原劑(例如, 三-2-缓基乙基膦等)、觸烧系錯合物(例如,硼烧_第三丁 胺錯合物、棚烧-Ν,Ν-二乙基苯胺錯合物以及棚烧_三曱胺 錯合物等)、硫醇系還原劑(例如,L-半胱胺酸(L_Cy steine ) 以及fee基乙硫醇等)、以及經胺系還原劑{例如,經胺以及. 二乙基羥胺等)等。另外,後文中作為(F3)及(F4)而 例示的糖類及糖醇亦具有作為有機還原劑的效果。 無機還原劑(C-2)可列舉:硫的含氧酸類{例如,亞 硫酸(鹽)、一亞硫酸(鹽)、二亞硫確酸(鹽)、硫代硫酸 (鹽)、二硫磺酸(鹽)、多硫磺酸(鹽)等}、磷的含氧酸 類{例如,亞磷酸(鹽)、亞磷酸氫酸(鹽)、次磷酸(鹽) 等}、其他無機還原劑(硫酸亞鐵、氯化錫、氰基硼氫化鈉 (sodium cyanoborohydride )以及领氫化納等)等。 形成這些還原劑(C)的鹽可使用與上述(A_2)中的 示例相同的鹽。 就控制清潔劑的蝕刻性以及防止清潔劑中的離子造成 基板再次污染的觀點而言,這些還原劑中較好的是 碳數為1〜12的酿類、碳數為6〜9的還原嗣類、碳數為^ 〜30的月曰肪族胺、硫醇系還原劑、硫的含氧酸類及碟的含 氧酸類,更好的是曱醛、L-抗壞血酸(鹽)、異抗壞血酸 (isoascorbic add)(鹽)、異抗壞血酸(eryth〇rbic add) -26- 200923072 (鹽)、單乙醇胺、二乙醇胺、㈣基_二己醇胺、l半脱 胺酸、胺基乙硫醇、亞硫酸(鹽)、二亞 .味小 4 / 一、 ^ \ JBU J 一 in 硫續酸(鹽)、硫代硫酸(鹽)' 亞填酸(鹽^ ^ (f以及次觀⑷,特別好的是L-抗壞血ί (壅)、 酸(Μ>二亞_酸(鹽)、亞雜(鹽)、 亞磷酸虱酸(鹽)以及次磷酸(鹽)。 對(C)形成鹽時的對離子並無特別限制 與 上述(Α-2)中的示例相同的對離子。 '、O 200923072 Performance, in terms of substrate saturation control and cleaning and these salts, it is better (5) WB_6), (B (_7) m) acid salt, particularly good is ethylenediaminetetraacetic acid ^ =, (, )-, di-andylethyl"amine tetraethyl" "; aspartic acid diacetic acid (salt) 'aspartic acid (even ", sexually controlled and cleaned ί: the content is better than less Is equal to 3〇%, better Ϊ 〇.1/〇~2〇%, particularly preferably 3%.3%~2〇%. Good ((10)), aromatic organic agent ()d歹; I lift The aliphatic organic reducing agent (C-lc) can be exemplified by the following reducing agent (.) and other organic agents: Ξ ΐ ίί (C-la) can be exemplified: carbon number is 1 to 12, 1 to 3 〇 of an aliphatic amine, etc. Acid: ί :: 12 organic acids can be mentioned: formic acid, acetic acid, butyric acid = acid, "butyric acid, cis-butanic acid, 2- oxypropionic acid,: - acid gallic acid (_eacid) and salts of these acids. In addition, -23 - 200923072 (B-2) and (B-5) also have an effect as a reducing agent. Aldehydes having a carbon number of 1 to 12 The class can be listed as: formaldehyde, acetaldehyde, propionaldehyde, vinyl aldehyde, etc. The carbon number is 6 The reducing ketone of 9 may, for example, be L-ascorbic acid, isoascorbic acid, L-ascorbyl sulfate, L-ascorbyl phosphate, L-ascorbic acid 2 (L-ascorbic acid 2) -glucoside), L-ascorbyl palmitate, L-ascorbyl tetraisopalmitate, ascorbyl isopalmitate, erythorbic acid, isoascorbate, iso Ascorbyl palmitate, erythorbyltetraisopalmitate, and salts of these acids, etc. Examples of the aliphatic amine having a carbon number of 1 to 30 include an alkylamine having a carbon number of 丨6 and a carbon number of 2~ a hospital alcohol amine, a carbon dioxide having a carbon number of 2 to 5, a cyclic amine having a carbon number of 4 to 10, a ruthenium (aw-) compound having a carbon number of 3 to 15, and a carbon number of 4 to 3 G. More (2 ~ 5) stretched base (carbon more (n = 3 ~ 6) amines, etc. @ neck carbon ΐ Γ 6! burnt amine can be cited: monofilament methylamine, ethylamine, dialkyl fun-methylamine , and pit amines with a carbon number of 2 to 6 {monomethylmethylamine, propylmethylamine, propylethylamine, and diiso) Alkylamine, such as an alkanolamine triethanolamine having a carbon number of 2 to 6, a dimethylamine, a dr-alkanolamine, an ethanolamine, a diethanolamine, a 2-amino group, a mercapto-propene bromide, a 5-ethyl alcohol, and an N-methyl group. - ν, ν-indole 2_aminoethanol and hydrazine _(aminoethyl)ethanolamine, each and 2-(2-aminoethoxy)ethanol. Further, examples of the alkyldiamine having 2 to 5 carbon atoms include ethylenediamine, propylenediamine, I)·propylenediamine, anthracene-butanediamine, and 1,6-hexanediamine. The cyclic amine having a carbon number of 4 to 10 may, for example, be a piperidine, a piperazine or a M-diazabicyclo[2 2 (DABCO). Examples of the ruthenium compound having a carbon number of 3 to 15 include 18-diaza [, deca-(10) U), diazabicyclo[43.〇 = (DSN) and the like. The carbon number is 4 to 30 (n = 2 to 5) alkyl (the carbon number is 2 to 6). The (n = 3 to 6) amines are exemplified by diethylenetriamine, triethylenetetramine, and tetraethylamine. Pentaamine, hexaethyleneheptaamine, iminodipropylamine, bis(hexamethylene)triamine, pentaethylenehexamine, and the like. The aromatic organic reducing agent (C-lb) may, for example, be an aromatic aldehyde having 7 to 12 carbon atoms, an aromatic amine having 6 to 9 carbon atoms, or a desired compound having 6 to 3 carbon atoms. Examples of the aromatic group having a carbon number of 7 to 12 include benzoic acid (benzaldehyde) and cinnamaldehyde. Examples of the aromatic amine having 6 to 9 carbon atoms include p-phenylenediamine and p-aminophenol. Examples of the compound having a gorge of 6 to 30 include monohydric phenol and polyphenol. The unitary age can be exemplified by: 3-hydroxyflavone, and t〇COpher〇l (α _, yS·, γ_, _, 卜 or _tocopherol, etc.). Many examples include: 3,4,5-trihydroxybenzoic acid, catechol (pyr〇catech〇l), resorcinol-25·200923072 (resorcinol), hydroquinone, naphthalene Diphthoresorcinol, pyrogallol, and phloroglucinol, etc. Other organic reducing agents (C-lc) include phosphorus reducing agents (for example, tris-2-hydroxyethyl) Phosphine, etc., or a calcined complex (for example, borax-tert-butylamine complex, shed-rhodium-quinone, hydrazine-diethylaniline complex, and shed-triammine complex, etc.) a thiol-based reducing agent (for example, L-Cysteine and Fee-based ethanethiol), and an amine-based reducing agent (for example, an amine and a diethylhydroxylamine), etc. The saccharides and sugar alcohols exemplified as (F3) and (F4) hereinafter have an effect as an organic reducing agent. Examples of the inorganic reducing agent (C-2) include sulfur oxyacids (for example, sub- Sulfuric acid (salt), monosulfuric acid (salt), disulfite acid (salt), thiosulfuric acid (salt), disulfuronic acid (salt), polysulfuric acid (salt), etc., phosphorus oxyacids { For example, phosphorous acid (salt), hydrogen phosphite (salt), hypophosphorous acid (salt), etc., other inorganic reducing agents (ferrous ferrous sulfate, tin chloride, sodium cyanoborohydride, and sulphate The salt forming the reducing agent (C) may be the same salt as the above-mentioned (A_2). In terms of controlling the etching property of the cleaning agent and preventing the ions in the cleaning agent from causing re-contamination of the substrate, Among these reducing agents, preferred are those having a carbon number of 1 to 12, a reducing quinone having a carbon number of 6 to 9, a hydrazine aliphatic amine having a carbon number of from 〜30, a thiol-based reducing agent, and sulfur. Oxyacids and oxoacids of discs, more preferably furfural, L-ascorbic acid (salt), isoascorbic add (salt), erythrobic acid (eryth〇rbic add) -26- 200923072 (salt), Monoethanolamine, diethanolamine, (tetra)yl-dihexanolamine, l-deaminic acid, aminoethanethiol, sub Acid (salt), Erya. Weixiao 4 / I, ^ \ JBU J - in sulfur acid (salt), thiosulfate (salt) 'sub-acid (salt ^ ^ (f and sub-view (4), especially good It is L-anti-bad blood 壅 (壅), acid (Μ), di-acid (salt), hetero (salt), phosphite (salt) and hypophosphorous acid (salt). The counter ion in the case of (C) forming a salt is not particularly limited to the same counter ion as the example in the above (Α-2). ',

ti(C)可單獨使用,亦可併料種或_以上。 虽本發明的清潔劑含有還原劑(c)時,基於清潔劑 的有效成分的重量,還原劑⑹的含量較好的是小於等 於60% :更好的是1%〜5〇%,特別好的是2%〜佩。 該範圍的含量就控制基板的蝕刻性方面而言較佳。 驗性成分⑼可縣:通式⑴所表^四級錢鹽 (]>1)、氨(D-2)、上述的脂肪族有機還原劑(c_la)中 所例不的碳數為的脂肪族胺(D-3)、無 以及14些成分的混合物。另外,碳數為丨〜⑺'的脂肪族胺 (1>3)具有作為還原劑的效果以及作為鹼性成分的效果 這雨種效果。Ti(C) can be used alone or in combination or above. When the cleaning agent of the present invention contains the reducing agent (c), the content of the reducing agent (6) is preferably 60% or less based on the weight of the active ingredient of the cleaning agent: more preferably 1% to 5% by weight, particularly preferably The 2% ~ Pei. The content of this range is preferable in terms of controlling the etching property of the substrate. The test component (9) can be counted as follows: the carbon number of the above-mentioned aliphatic organic reducing agent (c_la), which is represented by the general formula (1), the fourth-grade money salt (]>1), the ammonia (D-2), and the above-mentioned aliphatic organic reducing agent (c_la) Aliphatic amine (D-3), no, and a mixture of 14 ingredients. Further, an aliphatic amine (1>3) having a carbon number of 丨~(7)' has an effect as a reducing agent and an effect as an alkaline component.

Ra I + 1 — N ~ R * · 〇 Η ~Ra I + 1 — N ~ R * · 〇 Η ~

I R4 式中,R1、R2、R3及R4分別獨立表示碳數為i〜24 的嫁基或以-(R5〇)r_H表示的基團,R5表示碳數為2〜4的 -27· 200923072 伸烧基’ r表示1〜6的整數。 碳數為1〜24的烷基可列舉:甲基、乙基、丙基、丁 -基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、 十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、 十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、 二十二烷基、二十三烷基以及二十四烷基等。碳數為2〜4 的伸烷基可列舉:伸乙基、伸丙基以及伸丁基等。r較好 的是1〜3。 四級銨鹽(D-1)的具體例可列舉:四甲基氫氧化銨、 三曱基乙基氫氧化銨、四乙基氫氧化銨、三乙基甲基氫氧 化録、四丙基氫氧化銨、四丁基氫氧化銨、四戊基氫氧化 銨、四己基氩氧化銨、三曱基乙基氩氧化銨及四乙基氫氧 化銨、羥基乙基三甲基氫氧化銨、羥基乙基三乙基氫氧化 敍、二羥基乙基二曱基氫氧化銨、三羥基乙基甲基氫氧化 銨等。 無機驗(D-4)可列舉:氫氧化链、氫氧化納以及氫 ) 氧化卸等。 就清潔性的觀點而言’(D)中較好的是四級銨鹽(D-1) 以及碳數為1〜30的脂肪族胺(d-3),更好的是四曱基氫 氧化錄、三曱基乙基氫氧化銨、四乙基氫氧化銨、三乙基 甲基氫氧化銨、單乙醇胺、二乙醇胺、三乙醇胺、N_甲基 -二乙醇胺、DBU、DBN以及併用這些驗性成分。 當本發明的清潔劑含有鹼性成分(D)時,就清潔性 的觀點等而言’基於本發明的清潔劑的有效成分的重量, -28 · 200923072 2)2量較好的是小於等於鲁更好^ 特別好的是3〇/。〜25。/。。 尺好的是2%〜30%, 本發明的清潔劑較好 原劑⑻及驗性成分⑼戶^^以聲合劑⑻义 从上’更好的是併用⑻盘 、群中的一種或-種 (D)。 ”()或併用(B)、(C)及 當本發明的清潔劑含有養合 餐合劑⑻及還的含還原劑⑹時, 面活性劑(Α)的重量,螯合H圭範圍是,基於界 (〇 ^ 0,〇/〇.2〇〇/〇 , ^ι%-6〇〇/〇, 3娜’且還原劑⑻為〇.5%〜t藝為1%〜 〜膝鳩劑⑻為^^是螯合劑 ⑻、除了界面活性劑⑷、水、螯合劑 ,本發明的清潔劑之效果的範圍 ⑻、三元或三元以1含麵自以分散劑 成,添加劑(Η)所組成的族群中的一種或一種以上) f糖類及其射物(經基乙基纖維素、陽離子化纖 、,,素、羥基甲基纖維素、羥基丙基纖 _)、陽離持士;, f古亞膠(gUar 鹽( /、二仙膠(xanthan gum)、海藻酸 嶙: Γ子化賴);聚乙稀醇(―)以及 •曰{直酸(phytic aci(i)、二(聚氧乙烯)燒基醚磷酸、三 -29· 200923072 (聚^乙婦)燒基醚磷酸等}等。另外, 性界面活性劑(A_2a)亦具有 =刀于㈣離子 ^ ^ 八负作為分散劑的效果。 田發明的清潔劑含有這些分散劑 發明的清潔_有效成分的h)寺基於本In the formula I R4, R1, R2, R3 and R4 each independently represent a graft having a carbon number of i to 24 or a group represented by -(R5〇)r_H, and R5 represents a carbon number of 2 to 4 -27·200923072 The stretching base 'r represents an integer of 1 to 6. The alkyl group having a carbon number of 1 to 24 may, for example, be a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, an undecyl group or a dodecane group. , tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, icosyl, twentieth Dialkyl, behenyl, tetracosyl and the like. Examples of the alkylene group having a carbon number of 2 to 4 include an ethyl group, a propyl group and a butyl group. r is preferably 1 to 3. Specific examples of the quaternary ammonium salt (D-1) include tetramethylammonium hydroxide, tridecylethylammonium hydroxide, tetraethylammonium hydroxide, triethylmethylhydroxide, and tetrapropyl. Ammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium arsenide, tridecylethylammonium arsenide, tetraethylammonium hydroxide, hydroxyethyltrimethylammonium hydroxide, Hydroxyethyl triethyl hydride, dihydroxyethyl decyl ammonium hydroxide, trishydroxyethyl methyl ammonium hydroxide, and the like. Examples of the inorganic test (D-4) include a hydroxide chain, sodium hydroxide, and hydrogen. From the viewpoint of cleanability, preferred among the '(D) is a quaternary ammonium salt (D-1) and an aliphatic amine (d-3) having a carbon number of 1 to 30, more preferably tetradecyl hydrogen. Oxidation record, tridecylethylammonium hydroxide, tetraethylammonium hydroxide, triethylmethylammonium hydroxide, monoethanolamine, diethanolamine, triethanolamine, N-methyl-diethanolamine, DBU, DBN and combined use These test ingredients. When the cleaning agent of the present invention contains the alkaline component (D), the weight of the active ingredient of the cleaning agent based on the present invention is preferably less than or equal to the weight of the active ingredient of the cleaning agent of the present invention. Lu is better ^ Especially good is 3〇/. ~25. /. . The ruler is preferably 2% to 30%, and the cleaning agent of the present invention is preferably a good agent (8) and an inspective component (9). The sounding agent (8) is preferably used in combination with (8) disks, one of the groups or - Kind (D). "() or in combination with (B), (C) and when the cleaning agent of the present invention contains the nutrient-mixing agent (8) and the reducing agent (6), the weight of the surfactant (Α), the chelation range is Based on the boundary (〇^ 0,〇/〇.2〇〇/〇, ^ι%-6〇〇/〇, 3na' and the reducing agent (8) is 〇.5%~t art is 1%~~ knee 鸠(8) is a chelating agent (8), in addition to the surfactant (4), water, chelating agent, the range of effects (8), ternary or ternary of the cleaning agent of the present invention is formed by a dispersing agent in a surface containing 1 additive (Η) One or more of the group consisting of f saccharides and their emitters (via benzylethyl cellulose, cationized cellulose, phthalocyanine, hydroxymethylcellulose, hydroxypropylcellulose), cations; , f Gua gum (/, xanthan gum (xanthan gum), alginate: Γ子化赖); polyethylene glycol (―) and • 曰{直酸(phytic aci(i), two (polyoxyethylene) alkyl ether phosphate, three -29 · 200923072 (poly ethoxylate) alkyl ether phosphate, etc. In addition, the sexual surfactant (A_2a) also has = knife in (four) ion ^ ^ eight negative as The effect of the dispersant. h _ cleaning agent containing an active ingredient of the invention, these dispersants) based on the present Temple

的疋小於等於10% ’更好的是小於等於 好的是小於等於5%。 竹乃J 三元或三元以上的多元醇(F)可列舉以下的(f 〜(F5)等。 (F1)脂肪族多元醇(甘油、三羥甲基乙烷、三羥甲 基丙烷、季戊四醇等); (F2) (F1)的脫水縮合物(二甘油、三甘油、四甘 油、五甘油等); (F 3 )糖類,例如單糖類{戊糖(阿拉伯糖(虹北化〇 s e )、 木糖(xylose)、核糖(ribose)、木酮糖(xylulose)、核酮 糖(ribulose )等)、己糖(葡萄糖(giucose )、甘露糖 (mannose)、半乳糖(galactose)、果糖(fructose)、山梨 〇 糖(sorbose)、塔格糖(tagatose)等)、庚糖(景天庚酮糖 (sedoheptulose)等)等}、二糖類(海藻糖(trehai〇se)、 蔗糖(saccharose )、麥芽糖(maltose )、纖維雙糖 (cellobiose)、龍膽二糖(gentiobiose)、乳糖(iact〇se) 等)、以及三糖類(棉子糖(raffinose )、麥芽三糖 (maltotriose)等)等; (F4)糖醇(阿拉伯糖醇(arabitol)、核糖醇(adonitol)、 木糖醇(xylitol )、山梨糖醇(sorbitol )、甘露糖醇 -30- 200923072 imanmtoij、平礼糖醇(dulcitol)等); (F5)三苯酚(三苯酚pA等); 以及上述(F1)〜(F5)的環氧烷(碳數為2〜4)加 成物(加成莫耳數為1莫耳〜7莫耳)等。 而且,三元或三元以上的多元醇(F)可單 亦可併用兩種或兩種以上。 就防止基板受到腐蝕的效果較大的方面而言,三元 三元以上的多元醇(F)中,較好的是(f1)、(f2)、(f3) 及(F4),更好的是甘油、蔗糖及山梨糖醇。 當本發明的清潔劑含有三元或三元以上的多元醇(F) 時:基於清糊的有效成分的重量,該三元或三元以上的 多兀醇(F)的含量較好的是小於等於3〇%,更好的是小 於等於20%,特別好的是小於等於1〇%。 水溶性有機溶劑(G)可列舉於加^下在水中的溶解 度(g/l〇〇 g的%0)大於等於3、較好的是大於等於1〇 的有機溶劑。 例如可列舉··亞硬{二曱基亞硬、環丁礙(sulf〇lane)、 丁基風3-甲基環丁硬、2,4_二甲基環丁硬等厂颯(二甲基 礙一乙基砜、雙(2_羥基乙基)颯等};醯胺{N,N-二曱基 甲醯胺' N·甲基甲醯胺、N,N•二甲基乙醒胺、N,N_二甲基 丙酿胺等};内醯胺{N-甲基_2_吡咯烷酮 (N-methyl-2-pyrrolid〇ne)、N乙基_2_吨咯烷酮、N_羥基 甲基_2令各燒_等}:内酯{石_丙内酉旨(卜pr〇pi〇iact〇ne )、 丁内酯、丁内酯、τ•戊内酯、戊内酯等丨;醇丨甲 -31 - 200923072 醇、乙醇、異丙醇等};二醇及二醇醚{乙二醇、乙二醇單 甲醚、三乙二醇單曱醚、乙二醇單乙醚、二乙二醇、二乙 二醇單曱醚、二乙二醇單乙醚、二乙二醇單丁醚、二乙二 醇單己醚、丙二醇、丙二醇單甲醚、二丙二醇單甲醚、1,3-丁二醇、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇二 甲醚、三乙二醇二乙醚等};噁唑烷酮(N-甲基-2-噁唑烷 酉同(N-methyl-2-oxazolidinone)、3,5-二曱基-2-°惡唆烧酮The 疋 is less than or equal to 10% ‘Better is less than or equal to 5% or less. Examples of the ternary or trivalent or higher polyhydric alcohol (F) are the following (f ~ (F5), etc. (F1) aliphatic polyhydric alcohol (glycerol, trimethylolethane, trimethylolpropane, (f2) (F1) a dehydrated condensate (diglycerol, triglycerin, tetraglycerol, pentaglycerol, etc.); (F 3) a sugar such as a monosaccharide {pentose (arabinose (Hongbei Huayu se) ), xylose, ribose, xylulose, ribulose, etc., hexose (giucose, mannose, galactose, fructose) (fructose), sorbose, tagatose, etc., heptose (sedoheptulose, etc.), disaccharides (trehalose, saccharose) ), maltose, cellobiose, gentiobiose, lactose (iact〇se), and trisaccharides (raffinose, maltotriose, etc.) (F4) sugar alcohol (arabitol, adonitol, xylitol) , sorbitol, mannitol-30-200923072 imanmtoij, dulcitol, etc.; (F5) trisphenol (trisphenol pA, etc.); and the above (F1) to (F5) rings An oxane (carbon number: 2 to 4) adduct (additional molar number is 1 mol to 7 mol), etc. Further, the ternary or trivalent or higher polyhydric alcohol (F) may be used alone or in combination. In the case of preventing the substrate from being corroded, the ternary trivalent or higher polyol (F) is preferably (f1), (f2), (f3) and F4), more preferably glycerin, sucrose and sorbitol. When the cleaning agent of the present invention contains a ternary or trihydric polyol (F): the ternary or tribasic based on the weight of the active ingredient of the clear paste The content of the polyterpene alcohol (F) or more is preferably 3% or less, more preferably 20% or less, particularly preferably 1% by weight or less. The water-soluble organic solvent (G) is exemplified in The organic solvent in which the solubility in water (%/g of g/l〇〇g) is 3 or more, preferably 1 or more, is exemplified. 〇 碍 ( 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Base; 飒, etc.}; guanamine {N,N-dimercaptocarboxamide 'N·methylmethionamine, N,N•dimethyl ketone amine, N,N-dimethyl propylamine, etc. }; indoleamine {N-methyl-2-pyrrolid〇ne (N-methyl-2-pyrrolid〇ne), N-ethyl-2-pyrrolidone, N-hydroxymethyl-2, each burning _, etc. : lactone {石_丙内酉的(卜pr〇pi〇iact〇ne), butyrolactone, butyrolactone, τ-valerolactone, valerolactone, etc.; alcohol armor-31 - 200923072 alcohol, Ethanol, isopropanol, etc.; glycol and glycol ether {ethylene glycol, ethylene glycol monomethyl ether, triethylene glycol monoterpene ether, ethylene glycol monoethyl ether, diethylene glycol, diethylene glycol single Ether ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, propylene glycol, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, 1,3-butylene glycol, diethylene glycol Alcohol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, etc.; oxazolidinone (N-methyl-2-oxazolidine oxime (N-methyl -2-oxazolidi None), 3,5-dimercapto-2-° oxazepine

等)’腈(乙腈(acetonitrile )、丙腈、丁腈、丙稀腈、甲 ,两歸腈、苄腈(benzonitrile)等);碳酸醋(碳酸乙二酯、 石反酸内二酯等);酮(丙酮、二乙基酮、苯乙酮、甲基乙基 嚷已_、環戊酮、二丙酮醇等);環狀醚(四氫呋喃、 四氫吡喃等)等。 而且,上述水溶性有機溶劑(G)可單獨使用,亦可 用兩種或兩種以上。 面的性以及防止清潔劑中的成分殘留在電子材料表 二醇;/點等而言,上述水溶性有機溶劑(G)中較好的是 一〜醇越’更好的是乙二醇單曱趟、二乙二醇單甲_、 ㈣、二乙二醇單頂以及二乙二醇單己趟。 於清二機溶劑⑹時,基 別,更好的是小於等於鮮特 調整劑、緩衝列舉·抗氧化劍、防鱗劑、PH值 衝劑消泡劑、防腐劑以及增溶劑(hydros -32. 200923072 agent)等。 抗氧化劑可列舉:酚系抗氧化劑{2,6_二第三丁基苯 酚、2-第三丁基_4·甲氧基苯酚、2,4_二甲基_6_第三丁基苯 胺系抗氧化劑{單辛基二苯基胺、單壬基二苯基胺 =單烷基二苯基胺;4,4,-二丁基二苯基胺、4,4,-二戊基二 苯基胺等二絲二苯基胺;四丁基二苯基胺、四己基二苯 基,等纽基二苯基胺;α_萘基胺、苯基_α_萘基胺等萘 基胺等},硫系化合物{酚嗟唤(phen〇thiazine)、季戊四醇 -四(3-月桂基硫代丙酸醋)、雙(3,5_第三丁基續基节基) 硫鱗等};鱗系抗氧化劑{雙(2,4_二第三丁基苯基)季戊四醇 -亞鱗1½、亞磷酸苯基二異癸自旨、越酸二苯基二異辛 酯、亞磷酸三苯基酯}等。 這些抗氧化劑可單獨使用,亦可併用兩種或兩種以上。 防銹劑可列舉:苯幷三唑(b_iazole) 、曱苯三唑 tolyltriazole)、具有碳數為2〜1〇之烴基的苯幷三唑、苯 幷心坐(benZimidazole)、具有碳數為2〜20之烴基㈣ ,、具有碳數為2〜20之烴基的喧嗤(細〇1〇、2_疏基 苯幷嗟坐等3 I有機防鱗劑;十二烯基丁二酸半醋、十八 1基丁一酸酐、十二烯基丁二酸醯胺等燒基或稀基丁二 酉欠;山梨醇酐單油酸醋(祕如咖麵⑽)、甘油單油 酸醋、季戊四醇單油酸§|等多^醇部分醋等。 這些防錄劑可單獨使用,亦可併用兩種或兩種以上。 pH值調整劑可列舉無機酸(鹽酸、硫酸、硝酸、胺錯 酸(s— acid)以及鱗酸等)、上述所例示的無機驗(d_4') •33· 200923072 等,這些pH值調整劑可單獨使用,亦可併用兩種或兩種 以上。 緩衝劑可使用具有緩衝作用的有機酸或無機酸、及/ 或這些有機酸或無機酸的鹽。 有機酸可列舉上述脂肪族有機還原劑(c_la)中所例 示的碳數為1〜12的有機酸類等,無機酸例如可列舉二 酸、硼酸等。另外,這些酸的鹽可列舉與上述陰離子性界 面活性劑(A-2 )中的示例相同的鹽。Etc.) 'acetonitrile (acetonitrile, propionitrile, butyronitrile, acrylonitrile, methyl, nitrile, benzonitrile, etc.); carbonated vinegar (ethylene carbonate, rhegidide internal diester, etc.) Ketone (acetone, diethyl ketone, acetophenone, methyl ethyl hydrazine, cyclopentanone, diacetone alcohol, etc.); cyclic ether (tetrahydrofuran, tetrahydropyran, etc.) and the like. Further, the above water-soluble organic solvent (G) may be used singly or in combination of two or more kinds. The nature of the surface and the prevention of the components in the detergent remain in the diol of the electronic material; /, etc., in the above water-soluble organic solvent (G), it is preferred that the alcohol is more preferably Bismuth, diethylene glycol monomethyl _, (tetra), diethylene glycol monotop and diethylene glycol monohexyl oxime. In the case of Qingqingjiji solvent (6), the base is better than the fresh special regulator, buffer enumeration, anti-oxidation sword, anti-scaling agent, PH agent defoamer, preservative and solubilizer (hydros -32. 200923072 agent) and so on. Antioxidants include phenolic antioxidants {2,6-di-t-butylphenol, 2-t-butyl-4-methylphenol, 2,4-dimethyl-7-t-butylaniline Antioxidant {monooctyldiphenylamine, monodecyldiphenylamine=monoalkyldiphenylamine; 4,4,-dibutyldiphenylamine, 4,4,-dipentyl Diphenyldiphenylamine such as phenylamine; tetrabutyldiphenylamine, tetrahexyldiphenyl, etc. neoyldiphenylamine; naphthyl group such as α-naphthylamine or phenyl-α-naphthylamine Amine, etc., a sulfur-based compound {phen〇thiazine, pentaerythritol-tetrakis(3-laurylthiopropionate), bis(3,5_t-butyl sulfhydryl), sulfur scales, etc. Scale; antioxidants {bis(2,4_di-t-butylphenyl)pentaerythritol-subscale 11⁄2, phenyl diisoindole phosphite, diphenyl diisooctyl phthalate, phosphorous acid Phenyl ester} and the like. These antioxidants may be used singly or in combination of two or more. Examples of the rust preventive agent include: benzotriazole (b_iazole), toltriazole (tolyltriazole), benzotriazole having a hydrocarbon group of 2 to 1 fluorene, benzimidazole, and having a carbon number of 2 a hydrocarbyl group of -20, a hydrocarbon having a carbon number of 2 to 20, a sulfonium (fine hydrazine, a hydrazine hydrazine, a 3 I organic scale inhibitor; a dodecenyl succinic acid half vinegar, Octadecyl monohydride, dodecenyl succinate, etc., or succinyl sulphate; sorbitan monooleic acid vinegar (secret such as coffee noodle (10)), glycerol monooleate, pentaerythritol single oil Acid §| etc., such as vinegar, etc. These anti-recording agents may be used singly or in combination of two or more. The pH adjusting agent may be listed as a mineral acid (hydrochloric acid, sulfuric acid, nitric acid, amine-acid (s- Acid), scallops, etc., the inorganic test (d_4'), 33, 200923072, etc. exemplified above, these pH adjusters may be used singly or in combination of two or more. The buffer may be used as a buffer. An organic or inorganic acid, and/or a salt of these organic or inorganic acids. The organic acid may be exemplified by the above aliphatic organic reduction The organic acid having a carbon number of 1 to 12 as exemplified in the agent (c_la), and the inorganic acid may, for example, be a diacid or a boric acid. Examples of the acid salt include the above anionic surfactant (A-2). The same salt in the example.

這些緩衝劑可單獨使用,亦可併用兩種或兩種以上。 消泡劑可列舉:石夕酮(silicone )消泡劑{以二甲美石夕 酮(dimethyl silicone)、氟矽酮、聚醚矽酮等作為構成成分 的消泡劑等}等。這些消泡劑可單獨使用,亦可併用兩: 兩種以上。 5 防腐劑可列舉:三嗪(triazine)衍生物{六氫 三(2·羥基乙基)-均三嗪等}、異噻唑啉(is〇thiaz〇Une)衍 生物{1,2-笨幷異嗟《坐琳_3_嗣、2-曱基-4-異嘆峻琳_3_綱、5_ 氯-2-曱基-4-異養嗤琳-3-嗣等}、吼咬(pyridine)衍生物比 啶、2-吼唆硫醇-1-氧化物(鹽)等卜嗎琳(m〇rph〇Une) 衍生物{4-(2-硝基丁基)嗎啉、4,4-(2-乙基-2-硝基三亞甲基) 二嗎嘛等}、苯幷咪X»坐衍生物(2-(4-<»塞唾基)苯幷咪嗤等}、 其他防腐劑{聚[氧乙烯(二甲基亞胺基)伸乙基(二曱基亞胺 基)伸乙基]二氣化物、對氯-間二甲苯酚、苯氧基乙醇、苯 氧基丙醇、乙醯氧基二甲基二氧陸圜、異丙基甲基苯酚、 四氯間笨一甲腈(tetrachloroisophthalonitrile )、雙溴乙酿 34 · 200923072 等料丙炔基丁基胺基甲_、2,^ ^些防腐劑可單獨使用,亦可併用兩種或 增溶劑可列舉間苯二酶以及水揚酸(鹽 ^ 這些酸的鹽可列舉與上述陰離子性界面活性另二 的示例相同的鹽。這些增溶劑可單獨使用,亦可併用= 或兩種以上。另外’作為確酸系界面活性劑(Α 例示的曱苯項酸(鹽)、二甲苯續酸 = (鹽)亦具有作為增溶劑的效果。 及,、丙本破 虽本發明的清潔劑含有其他添加劑⑻ 劑的含量為,基於清潔劑的有效成分的重量,抗氧=加 防。_、緩_、防腐劑以及增溶劑較好的是小於 10% ’更好的是小於等於8%,特別好的是小於等於、 而且,消泡劑的添加量較好的是小於等於2%, 03 小於等於1.5〇/〇 ’特別好的是小於等於1%。另外,其於= ,❶劑的有效成分的重量,ρΗ值調整劑較好的是小ς等ς 〇%,更好的是小於等於85%,特別好的是小於等於齡。 =且’基於清潔劑的有效成分的重量,其他添加劑⑻ 的二計含量較好的是小於等於90%,更好的是小於等於 85/。’特別好的是小於等於80%。 另外’當上述螯合劑⑻〜其他添加劑⑻間的組 3同而重複時’並非使用發揮與各成分相應之添加效果 而不關心該各成分作為其他成分的效果,而是須要 亦考慮到該各成分亦可同時獲得作為其他成分的效果,根 -35 · 200923072 據使用目的來調整該各成分的使用量。 就使用時的作業性或運輸效率的觀點而言,本發明之 ,潔劑的有效成分㈣度如上所述,通常為〜刚%, 3的是Γ〜5G%。因此,本發明之清潔射的水的含量 通常小於荨於99%,較好的是50%〜98%。 除了僅由界面活性劑⑷所構成的情況,本發明的 々潔劑是將界面活性劑⑷、與選自叫㈣⑻〜皇 及水所組成的族群令的至少-種成分加以 得滿足上述數式⑴的清潔劑,較好 的疋以如下所述的方法來製造。 (1)將界面活性劑⑷、或者使界面 視需要的選自以螯合劑甘H 1 m ^ J - 成族群中之_彳(H)及水所組 物採集合而成的混合 度,斜蘇鍟、〇。釋至用作4潔液時的有效成分濃 定,確切phV;5 下的PH值及氧化還原電位進行測 疋確邊=值及氧化還原電位(v)滿足數式⑴。 螯合齊(B;氧?電位不滿足數式⑴時,添加例如 還原T及繼性成分⑷)等使氧化 及氧化還=::數=整)氧化還原電位’以使阳值 除了 欲獲得具有特定範圍的pH值的清潔液時, 了士t:作以外’亦利用以下的方法來調整阳值 的⑴或⑵的操作令的PH值低於所需PH佶 的乾圍時,添加例如驗性成分⑼、其他添加劑^ -36 - 200923072 的pH值調整劑及/或界面活性劑(A_2)等使pH值升高的 成分’以將pH值調整至所需範圍内。 斤虽上述(1)或(2)的操作中的pH值高於所需值 的範圍時,添加例如螯合劑(B)、還原劑(c)、其他添加 劑(H)中的PH值調整劑及/或緩衝劑等使pH值下降的成 分’以將pH值調整至所需範圍内。 對製造本發明的清潔劑時的混合溶解裝置並無特別限 、 定,可使用安裝有攪拌葉片的攪拌混合裴置、或安裝有螺These buffers may be used singly or in combination of two or more. Examples of the antifoaming agent include a silicone defoaming agent {an antifoaming agent such as dimethyl silicone, fluoroketone or polyether fluorenone as a constituent component, and the like}. These antifoaming agents may be used singly or in combination of two or more: two or more. 5 preservatives can be exemplified by triazine derivatives {hexahydrotris(2.hydroxyethyl)-s-triazine, etc., isothiazoline (is〇thiaz〇Une) derivatives {1,2- awkward嗟 嗟 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 坐 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Pyridine derivatives such as pyridine, 2-anthracenyl mercaptan-1-oxide (salt), etc., b〇琳(m〇rph〇Une) derivative {4-(2-nitrobutyl)morpholine, 4, 4-(2-ethyl-2-nitrotrimethylene) di?, etc.}, benzoquinone X» sitting derivative (2-(4-<»sedyl)benzoquinone, etc.), Other preservatives {poly[oxyethylene (dimethylimido)-extended ethyl (didecylimido)-extension ethyl] di-vapor, p-chloro-m-xylenol, phenoxyethanol, phenoxy Propyl butylamino group, propyl methoxy dimethyl dioxal hydrazine, isopropyl methyl phenol, tetrachloroisophthalonitrile, dibromo bromide 34 · 200923072 A, 2, ^ ^ Some preservatives may be used alone or in combination with two or solubilizing agents, such as m-benzoic acid and salicylic acid (salt salts) The anionic interfacial activity is exemplified by the same salt. These solubilizers may be used singly or in combination of two or more. In addition, 'as an acid-based surfactant (Α exemplified phthalic acid (salt), two Toluene acid = (salt) also has the effect of acting as a solubilizer. And, the present invention, although the detergent of the present invention contains other additives (8), the content of the agent is based on the weight of the active ingredient of the detergent, anti-oxidation = added _, _, _, preservative and solubilizing agent is preferably less than 10% 'better than 8%, particularly preferably less than or equal to, and, the amount of defoaming agent is preferably less than or equal to 2 %, 03 is less than or equal to 1.5 〇 / 〇 ' particularly good is less than or equal to 1%. In addition, it is at =, the weight of the active ingredient of the elixirs, the ρ Η value adjusting agent is preferably less than ς ς%, better It is 85% or less, particularly preferably less than or equal to the age. = and 'based on the weight of the active ingredient of the detergent, the other two components of the additive (8) are preferably less than or equal to 90%, more preferably less than or equal to 85. /. ' Particularly good is less than or equal to 80%. When the group 3 of the above chelating agent (8) to other additives (8) is repeated, it is not used to exert an effect corresponding to each component, and does not care about the effect of the components as other components, but also requires consideration of the components. The effect of the other components can be obtained at the same time, and the amount of each component is adjusted according to the purpose of use. The active ingredient of the detergent of the present invention (4) from the viewpoint of workability or transportation efficiency at the time of use The degree is as described above, usually ~ just %, 3 is Γ ~ 5G%. Therefore, the content of the cleaned water of the present invention is usually less than 99%, preferably 50% to 98%. In addition to the case where only the surfactant (4) is used, the cleaning agent of the present invention satisfies the above formula by the surfactant (4) and at least one component selected from the group consisting of (4) (8) to Emperor and water. The cleaning agent of (1), preferably hydrazine, is produced by the method described below. (1) Mixing the surfactant (4) or the mixture of _彳(H) and water selected from the group of the chelating agent H 1 m ^ J - as desired in the interface, obliquely Su Shi, Yan. The concentration of the active ingredient when used as a 4 clean solution is determined by the exact pH of phV; the pH value and the redox potential of 5 are determined by the positive edge = value and the redox potential (v) satisfying the formula (1). Chelating (B; when the oxygen potential does not satisfy the formula (1), adding, for example, reducing T and the relay component (4)), etc., so that the oxidation and oxidation are still =:: number = whole) redox potential 'to make the positive value besides In the case of a cleaning liquid having a specific range of pH values, when the pH of the operation command (1) or (2) is adjusted to be lower than the required pH 利用 by using the following method, for example, The component (9), other additives, the pH adjusting agent and/or the surfactant (A_2), etc., which raise the pH value, are adjusted to the desired range. When the pH value in the operation of the above (1) or (2) is higher than the desired value, a pH adjusting agent such as a chelating agent (B), a reducing agent (c), and other additives (H) is added. And/or a component such as a buffer that lowers the pH to adjust the pH to a desired range. The mixing and dissolving device for producing the cleaning agent of the present invention is not particularly limited, and a stirring mixing device equipped with a stirring blade or a screw may be used.

Is 旋型葉片的攪拌混合裝置等。 就防止金屬污染的觀點而言,基於清潔劑的有效成分 的重量,本發明之清潔劑中的Na、K、Ca、Fe、Cu、A卜Is a mixing and mixing device for the spiral blade. From the viewpoint of preventing metal contamination, based on the weight of the active ingredient of the detergent, Na, K, Ca, Fe, Cu, A in the detergent of the present invention

Pb、Ni及Zn原子的各金屬含量較好的是小於等於2〇 PPm ’更好的是小於等於1〇 ppm,特別好的是小於等於5 ppm ° 這些金屬原子的含量的測定方法可利用公知的方法, 例如原子吸光法(atomic absorption method )、感應麵合電 漿光譜分析法(inductively-coupled plasma spectrometry, ICP光譜分析法)以及ICP重量分析法。 本發明之第二發明即電子材料用清潔液是視需要用水 將上述清潔劑加以稀釋而用於清潔步驟的清潔液,其特徵 在於.有效成分濃度為0.01 wt%〜15 wt%,且25°C下的 PH值及氧化還原電位(V)[單位為mV,vsSHE]滿足下述 數式(1)。 V$-38.7xpH 值+ 550 ( 1) -37- 200923072 本發明的清潔液中的成分以及氧化還原電位的測定方 法等如上所述。 本發明的電子材料用清潔液尤其適合用作磁光碟基 板、平面顯示器基板及光罩基板等的清潔液,並且如上所 述,針對各電子材料,本發明的電子材料用清潔液存在較 佳的pH值範圍。 现&gt;月漯劑對電子材料的潤濕性的觀點而言,本發明的 清潔劑的表面張力(坑)較好的是小於等於65mN/m, 更好的是小於#於5G mN/m,制好的是小於等於4〇 π^Ν/πι。本發明之表面張力可依據仍〇362:觸的 法·對應於ISO 304來測定。 =防止齡再:細著㈣祕職 液的導電率㈤㈣較好的是〇·2〜 是青潔5 〜5·〇,特別好的是L0〜3.5。 X㈣疋0.5 本發明之第三發明即電子材料 〜 ^中對電子材料進行清潔的清潔方法 二板(尤其是經實施Ni-P電鍍的鋁基 美 板、及光罩基板等的清潔方法 =面不器基 舉:油分(冷卻劑(⑽lam)=對象物(污潰)可列 皮脂等)、塑化劑(鄰苯二f ^人體的巧潰(指紋、 機物以及無機顆粒[研磨劑( §曰等)、有機顆粒等有 錦及鑽石等)及研㈣(料氧化铭、氧化 較好的是,在磁^基板Hi㈣纽極為優異,故而 好的是磁光碟用玻璃基板、 •38. 200923072 以及經實施Νι-Ρ電鍍的磁光碟用鋁基板)、平面顯示器基 板及光罩基板的製造步驟中,進行旨在除去研磨劑、研磨 屑及研削屑等顆粒的清潔步驟,更具體而言,較好的是將 本發明的清潔方法用作研削步驟後的清潔步驟、研磨步驟 後的清潔步驟及/或紋理化步驟後的清潔步驟中的清潔方 法。 另外,為了防止空氣中漂浮的污潰(顆粒及有機物污 項等)牛ϋ地附著於基板表面,可在上述清潔步驟的前後 將該基板浸潰於本發明的清潔液中。 當上述研磨步驟是使用氧化紹、石夕酸膠、氧化鈽或鑽 石中的任-種來作為研磨劑的研磨步驟時,特別容易發揮 出本發明之清潔方法的效果。 本發明的清潔方法巾崎潔方式,可辟選自以超廣 ^潔、魏清潔(sh_deaning)、健清 —rung)、毛刷清潔(bmshcleaning)、浸 潜 式,;Γ _射的至少—種清潔方 於任-種方式下均容易發揮出本發明之清潔方法的效 就清潔性的觀點而言,傕用太 H雜温度(t)較好妓mi 〇c,特別好的是2(rc〜6(rc。 子材二卜接潔方法而加以清潔的電 是1。〜1S。姑(較好的疋小於等於20。,更好的 疋&quot;5,特别好的是2。〜1〇。。若接觸角在該範=的 -39· 200923072 則在藉由濺鍍(sputtering)而形成磁性膜等時,可形成均 勻的膜,就磁特性方面而言較佳。另外,接觸角可使用例 如全自動接觸角儀[協和界面科學股份有限公司製造, PD-W]來測定。 就電子材料的表面平坦性的觀點而言,以本發明的清 潔方法加以清潔後的電子材料表面的表面粗糙度(Ra)較 好的是小於等於0.5 nm,更好的是o.ooi nm〜〇 3 nm,特 別好的是0.05 nm〜0.25 nm。 f、' '另外’表面粗糙度(Ra)可使用SII Nano Technology 公司製造的E-sweep ’於下述條件下進行測定。 測疋模式· DFM (間歇接觸模式,tapping mode) 掃描區域:10 #mxl0 /zm 掃描線數:256條(在Y方向上掃描) 修正:有Χ,γ方向上的平坦修正 本發明之第四發明即電子材料的製造方法包含以上述 清潔方法來對電子材料進行清潔的步驟,特別適合用作磁 光碟基板、平面顯示器基板及光罩基板的製造方法。 [實施例] 以下,藉由實施例來更詳細地說明本發明,但是本發 明並不限定於此。而且,只要無特別限定,則以下的份表 示重量份。以上述方法的測定條件,利用GPC來測定聚合 物的分子量。另外,實施例及比較例中所使用的超純水的 電阻率值大於等於18 ΜΩ。 [製造例1] 200923072 鋼制拌裝置及溫度控制裝置的容積為1升的不鏽 鋼衣间壓蚤(autoclave)中,投入月桂醇份(ι ι莫耳 份以及四曱基氫氧化錢(以下,簡稱為TMAH)的25% 水冷液10份(0 027莫耳份),於1〇〇。〇、小於等於*砂a 的^咸壓條件下脫水3G分鐘。然後_邊將反應溫度控制為 C,一邊以3小時滴加環氧乙烷(以下,簡稱為E〇) ^伤(9.8莫耳份),之後,於1〇(Γ(:下進行3小時熟化, 獲得粗^物。將該粗產物於小於等於2.6 kPa的減麼條件 下150C下保持2小時,分解並除去所殘留的TMAH, 獲得非離子性界面活性劑即月桂醇的9莫耳EO加成物 (A-1-1) 630 份。 [製造例2] 附有攪拌裝置及溫度控制裝置的容積為丨升的不鏽 鋼製高壓爸中’投入月桂胺185份(1.0莫耳份)、以及25% 的TMAH水溶液3.6份(〇.〇1莫耳份),於1〇〇。〇、小於等 於4 kPa的減壓條件下脫水3〇分鐘。然後一邊將反應溫度 ,制為HKTC,一邊以3小時滴加264份的EO (6.0莫耳 份),之後,於l〇〇t:下進行3小時熟化,獲得粗產物。將 該粗產物於小於等於2.6kPa的減壓條件下、15〇。(:下保持 2小時,分解並除去所殘留的TMAH,獲得非離子性界面 活性劑即月桂胺的6莫耳E〇加成物(冬^) 445份。 [製造例3] 於附有搜拌裝置及溫度控制裝置的容積為1升的不鏽 鋼製馬壓爸中’投入枯基苯紛(cumylphenol) 212份(1.0 -41 200923072 莫耳份)、以及25%的TMAH水溶液2.9份(0.008莫耳份), 於100°C '小於等於4 kPa的減壓條件下脫水30分鐘。然 後一邊將反應溫度控制為1001,一邊以3小時滴加 份(8.0莫耳份)的E〇,之後,於1〇〇。〇下進行3小時熟 化,獲得粗產物。將該粗產物於小於等於2 6 j^Pa的減壓 條件下、150 C下保持2小時,分解並除去所殘留的 TMAH’獲得非離子性界面活性劑即枯基苯酚的8莫耳EO 加成物(A-1-3) 560份。 ^ 1 [製造例4] 於可進行溫度調整及攪拌的反應容器中,加入異丙醇 300份及超純水1〇〇份,進行氮氣置換後升溫至75力。然 後於攪拌下,將丙烯酸的75%水溶液407份、以及二甲基 -2,2'-偶氮二異丁酸酯的15%異丙醇溶液%份以3 5小時分 別同時滴加至反應容器中。滴加結束後,於75。〇下攪拌5 小時,然後斷續地向系統内加入超純水,以使系統内不固 化’餾去水與異丙醇的混合物,直至檢測不出異丙醇為止。 Ό 用DBU (約450份)來中和所獲得的聚丙烯酸水溶液,直 至PH值成為7為止,再用超純水來調整濃度,藉此,獲 得陰離子性界面活性劑即聚丙烯酸DBu鹽(a-2- 1)的40% 水溶液。另外,聚丙烯酸DBU鹽(A-2-1)的Mw為10,000。 [製造例5] 於可進行溫度調整及回流的附有攪拌裝置的反應容器 中投入二氯乙烯1〇〇份,於攪拌下進行氮氣置換,然後升 溫至90。(:為止,使二氯乙烯回流。接著將苯乙烯12〇份、 -42- 200923072 以及預先於二氯6埽2G份中溶解有2,2,·偶1二異丁腈l·7 份的起始劑溶液以6小時分別同時滴加於反應容器内,滴 加:结束後再聚合!小時。聚合後,於氮氣密封下冷卻至 2〇C ’然後一邊將溫度控制為20。(:,-邊以1〇小時滴加 無水硫酸105份,滴加結束後,再進行3小時颯化(sulfone) 反應。反應之後,館去溶劑而進行固化,然後加入超純水 345份加以溶解,獲得聚苯乙稀續酸水溶液。接著用25% 的™AH水/谷液(約400份)來中和所獲得的聚苯乙婦續 酸水/合液,直至pH值成為7為止,再用超純水來調整濃 度,藉此,獲得陰離子性界面活性劑即聚苯乙烯磺酸 TMAH鹽(A_2_2)的4〇%水溶液。另外,聚苯乙稀續酸 TMAH 鹽(A-2-2)的 Mw 為 40,〇〇〇,颯化率為 97〇/〇。 [製造例6] 於附有攪拌裝置的反應容器中加入萘磺酸21份及超 純水10份,於8(rc下以3小時滴加37%甲醛8份。滴加 結束後,升溫至l〇5°c反應25小時,然後冷卻至室溫(約 υ 饥)’接著一邊於水浴中調整為抑一邊徐徐添^ DBU,以將pH值調整為6.5 (使用約15份dbu)。加入 超純水而將固形分調整為桃,獲得陰離子性界面活性劑 即萘磺酸福馬林縮合物的DBU鹽(Α-2·3 )的4〇%水溶液。 另外’萘磺酸福馬林縮合物的DBU鹽(α-2-3)的MwA 5,000 〇 ^ [製造例7] 除了使用由丙烯醢胺-2-曱基丙磺酸227份、丙燦酸% -43- 200923072 份及超純水131份所形成的70%單體水溶液436份,來代 替丙烯酸的75%水溶液407份以外,與製造例4同樣地在 聚合後館去水與異丙醇的混合物,直至檢測不出異丙醇為 止,獲得丙烯醯胺-2-甲基丙磺酸/丙烯酸共聚物水溶液。然 後一邊將所獲得的丙烯醯胺_2_曱基丙磺酸/丙烯酸共聚物 水溶液調整為25°C,一邊徐徐添加DBU,以將pH值調整 為6.5 (使用約280份DBU)’再用超純水來調整濃度,藉 此,獲得陰離子性界面活性劑即丙烯醯胺-2-甲基丙磺酸/ 丙烯酸共聚物DBU鹽(A-2-4)的40%水溶液。另外,上 述共聚物DBU鹽(A-2-4)的Mw為8,000。 [製造例8] 除了使用由曱基丙烯醯氧基聚氧乙烯硫酸酯鈉鹽的 50%水溶液[三洋化成股份有限公司製造,ELEMINOL RS-30]320份以及丙烯酸145份所形成的65%單體水溶液 465份’來代替丙烯酸的75%水溶液407份以外,與製造 例4同樣地在聚合後餾去水與異丙醇的混合物,直至檢測 〇 不出異丙醇為止,獲得甲基丙烯醯氧基聚氧乙烯硫酸酯鈉 鹽/丙烯酸共聚物水溶液。然後用超純水來稀釋所獲得的共 聚物水溶液,以使固形分濃度成為10〇/〇之後,使用陽離子 交換樹脂「Amberlite IR-120B」(Organo股份有限公司製 造)來除去溶液中的鈉離子,直至溶液中的鈉離子小於等 於1 ppm為止。另外,鈉含量是使用ICP光譜分析裝置 (VARIAN公司製造,Varian 730-ES)來測定的。然後一 邊將所獲得的甲基丙烯醯氧基聚氧乙烯琉酸S旨/丙埽酸共 200923072 聚物調整為25°C ’ 一邊用25%的TMAH水溶液(約600 份)來中和該甲基丙稀醯氧基聚氧乙烯硫酸酯/丙烯酸共聚 物,直至pH值成為7為止,再用超純水來調整濃度,藉 此,獲得陰離子性界面活性劑即曱基丙烯醯氧基聚氧乙烯 硫酸酯/丙烯酸酸共聚物TMAH鹽(A-2-5)的10%水溶液。 另外’上述共聚物TMAH鹽(A-2-5)的Mw為9,000。 [製造例9] 將辛基苯磺酸136份及超純水245份加入至1 L的燒 杯(beaker)中,使辛基苯磺酸溶解直至溶液變得均勻。 然後用DBN (約65份)來中和所獲得的辛基苯磺酸水溶 液,直至pH值成為7為止,再用超純水來調整濃度,藉 此,獲付陰離子性界面活性劑即辛基苯續酸鹽 (A-2-6)的40%水溶液。 [製造例10] 將2-乙基己酸144份及超純水3〇〇份加入至丨L的燒 杯中’使2·乙基己酸溶解直至溶液㈣均自。然後用二乙 醇胺(約105份)來中和所獲得的2-乙基己酸水溶液,直 至pH值成為7為止,再用超純水來調整漢度,藉此,獲 得陰離子性界面活性劑即2_乙基.二乙_ _ 的40%水溶液。 [製造例11] 1附,攪拌裝置及溫度控制裝置的玻璃製反應裝置 缺^又基己醇256份,於擾拌下冷卻至叱為止, 然後一邊將系㈣溫度保持為代,—邊以3小時滴加氯 •45· 200923072 續酸229份,獲得硫酸醋。然後用48%氫氧化卸水溶液(約 230份)進行中和,直至PH值成為7為止,再用超純水調 整濃度,藉此,獲得陰離子性界面活性劑的2-乙基己醇硫 酸酯卸鹽(A-2-8)的40%水溶液。 [實施例1〜實施例56]、[比較例丨〜比較例8] 於1 L的燒杯中、室温(約2〇。〇下,將表i〜表8 所記載的各成分以表1〜表8所記载的調配份數而均勻攪 拌、混合’製作實施例1〜實施例56及比較例1〜比較例 8的清潔劑’將實施例1〜實施例26及比較例1〜比較例5 的清潔劑直接以此濃度(稀釋倍率為1)作為清潔液來加 以評價,將實施例27〜實施例56及比較例6〜比較例8 的清潔劑用超純水稀釋至10倍而作為清潔液,根據以下的 評價方法來進行評價。結果示於表1〜表8中。 另外’表中所記載的超純水以外的各成分的調配份數 是進行有效成分換算所得的值。另外,表中所記載的超純 水的量包含製造例1〜製造例η中所得的界面活性劑及 ΤΜΑΗ水溶液中的超純水。 另外,表1〜表8中的螯合劑(β)、還原劑(c)、鹼 性成分(D)以及水溶性有機溶劑(G)的簡稱如下。 EDTA:乙二胺四乙酸 HEDP: 1-經基亞乙基-1,1·二膦酸 ΗΜΡ :六偏磷酸鈉 ΑΑ :抗壞血酸 Cys : L-半胱胺酸 -46 - 200923072 次鱗酸一納:次填酸單納鹽 MDeA : N-甲基二乙醇胺 TMAH :四曱基氫氧化銨 DEA :二乙醇胺 DBU: 1,8-二氮雜雙環[5.4,〇]_7·十一烯 DEG-B :二乙二醇單丁醚 〜使用pH值測量儀(堀場製作所公司製造’ M_l2)來 測定所獲得的清潔液在25°C下的pH值。以上述方法測定 氧化還原電位及表面張力。並且,藉由以下的方法來評價 清潔性一1〜清潔性—6、表面平坦性—丨〜表面平坦性」 3、蝕刻性一 1〜蝕刻性—3、接觸角〜接觸角〜3以及 分散性。 &lt;清潔性評價~1&gt; 使用作為研磨劑的市售矽酸膠漿料(粒徑約為3 〇 ) 以及研磨布,對3.5英吋的經實施Ni_P電鍍的磁光碟用基 板進行研磨之後,用超純水沖洗表面,並用氮氣吹拂表面, 藉此製作污染基板。將以上所製備的各清潔液取1&gt;〇⑻份 置於1 L的玻璃製燒杯中,然後將所製備的污染基板浸潰 於該清潔液中,於超聲波清潔機(200 kHz)内、3CTC下清 潔5分鐘。清潔後取出基板’用超純水充分沖洗,然後用 氮氣吹拂基板以使基板乾燥,依據下述評價基準,使用微 分干涉顯微鏡(differential interference microscope )(Nikon 公司製造’ 0PTIPH0T_2,倍率為400倍)來評價基板表 面的清潔性。另外’為了防止受到空氣污染,本評價是在 • 47· 200923072 美國聯邦標準 潔淨度(class )為 l,〇00 ( FED_STD_2()9D, 1988)的無塵室内實施的。 ◎:可幾乎完全除去。 〇:可大致清潔。 △ 殘留有少許粒子 X:幾乎無法清潔 &lt;清潔性評價一2&gt; 除了使用市售的氧化鋁漿料(粒徑約為 作為研磨劑以外,與清潔性評價—丨同樣地進行 &lt;清潔性評價一3&gt; ”只° 使用作為研磨劑的市售氧化鈽漿料(粒徑約為工⑻ nm)以及研磨布’來對2 5射的磁光碟用麵基板進行 研磨,之後用超純水沖洗表面,並用氮氣吹拂表面,藉此 製作污染基板,除此以外,與清潔性評價—丨同樣地進行 评價。 &lt;清潔性評價一4&gt; 除了使用市售的石夕酸膠漿料(粒徑約為3〇 nm)來作 為研磨劑以外,與清潔性評價—3同樣地進行評價。 &lt;清潔性評價一5&gt; 於市售的玻璃基板(Coming公司製造,玻璃板# 1737 ’ 1〇 cmxi〇 cm)上,散布將玻璃板切斷(斷裂)時的 坡填粉 5 mg’於 1〇5。(:的加熱板(hotplate)(PMC Industries 公司製造’數位加熱板系列730)上加熱1小時,使用由 此所得的基板作為污染基板,除此以外,與清潔性評價—i •48- 200923072 同樣地進行評價。 &lt;清潔性評價一5&gt; 於70°C的加熱板(PMC Industries公司製造,數位加 熱板系列730)上,以1分鐘將作為樣品污染物質的正三 十酸(東京化成工業公司製造)10 mg熔著於市售的玻璃 基板(Corning公司製造,玻璃板# 1737,10 cmxlO cm) 上’藉此製備污染基板。然後取清潔液100 g置於200 ml f 的玻璃製燒杯中,將所製備的污染基板浸潰於清潔液中, 於超聲波清潔機(200 kHz)内、3(TC下清潔5分鐘。清潔 後取出基板,用超純水充分沖洗,然後用氮氣吹拂基板以 使基板乾燥,依據與上述清潔性評價—1相同的評價基 準’使用微分干涉顯微鏡(Nikon公司製造,OPTIPHOT —2’倍率為400倍)來評價基板表面的清潔性。另外,為 了防止受到空氣污染,本評價是在潔淨度為1,〇〇〇 (FED-STD-209D,美國聯邦標準,1988)的無塵室内實 '施的。 () &lt;表面平坦性一 1&gt;The content of each of the Pb, Ni, and Zn atoms is preferably 2 〇 PPm or less, more preferably 1 〇 ppm or less, and particularly preferably 5 ppm or less. The method for measuring the content of these metal atoms can be known. Methods such as atomic absorption method, inductively-coupled plasma spectrometry (ICP spectrometry), and ICP gravimetric analysis. A cleaning liquid for an electronic material according to a second aspect of the present invention is a cleaning liquid which is used for a cleaning step by diluting the above-mentioned cleaning agent with water as needed, and has an active ingredient concentration of 0.01 wt% to 15 wt% and 25°. The pH value under C and the oxidation-reduction potential (V) [unit: mV, vsSHE] satisfy the following formula (1). V$-38.7xpH value + 550 (1) -37- 200923072 The components of the cleaning liquid of the present invention and the method for measuring the oxidation-reduction potential are as described above. The cleaning liquid for electronic materials of the present invention is particularly suitable for use as a cleaning liquid for a magneto-optical disk substrate, a flat display substrate, a photomask substrate, etc., and as described above, the cleaning liquid for electronic materials of the present invention is preferably used for each electronic material. pH range. The surface tension (pit) of the cleaning agent of the present invention is preferably 65 mN/m or less, more preferably less than #5 m mN/m, from the viewpoint of the wettability of the electronic material. The system is less than or equal to 4〇π^Ν/πι. The surface tension of the present invention can be determined in accordance with the method of still 〇362: touch, corresponding to ISO 304. = Prevention of age again: Fine (four) Secrets The conductivity of the liquid (five) (four) is better 〇 · 2 ~ is Qing Jie 5 ~ 5 · 〇, particularly good is L0 ~ 3.5. X (four) 疋 0.5 The third invention of the present invention is a cleaning method for cleaning an electronic material in an electronic material ~ ^ (in particular, a method for cleaning an aluminum-based slab subjected to Ni-P plating, a reticle substrate, etc.) No basis: oil (coolant ((10) lam) = object (stained) can be listed as sebum, etc.), plasticizer (o-phenylene hydride) (human fingerprints (fingerprints, organic matter and inorganic particles [abrasives ( §曰, etc.), organic particles, etc., and diamonds, etc.) and research (4) (Material oxidation, better oxidation, is excellent in the magnetic substrate Hi (four) button, so it is good for the glass substrate for magneto-optical disk, • 38. In the manufacturing steps of 200923072 and an aluminum substrate for magneto-optical disks subjected to Νι-Ρ plating, a flat display substrate, and a photomask substrate, a cleaning step for removing particles such as abrasives, polishing chips, and grinding chips is performed, and more specifically, Preferably, the cleaning method of the present invention is used as a cleaning step after the grinding step, a cleaning step after the grinding step, and/or a cleaning method in the cleaning step after the texturing step. In addition, in order to prevent floating in the air (grain and organic matter, etc.) the burdock is attached to the surface of the substrate, and the substrate can be immersed in the cleaning liquid of the present invention before and after the above cleaning step. When the above grinding step is to use oxidized sulphate, sulphuric acid, When any of cerium oxide or diamond is used as a polishing step of the abrasive, the effect of the cleaning method of the present invention is particularly easily exhibited. The cleaning method of the present invention can be selected from the group consisting of ultra-wide cleaning, Wei cleaning (sh_deaning), Jianqing-rung), brush cleaning (bmshcleaning), immersion diving, Γ _ _ shooting at least a kind of cleaning method in any mode can easily play the effectiveness of the cleaning method of the present invention From the standpoint of cleanliness, it is better to use too H (t) temperature 妓mi 〇c, and particularly good is 2 (rc~6 (rc.) The material that is cleaned by the sub-material cleaning method is 1 ~1S. (Good 疋 is less than or equal to 20., better 疋 &quot; 5, especially good is 2. ~ 1 〇. If the contact angle is in the range = -39. 200923072 is by When a magnetic film or the like is formed by sputtering, a uniform film can be formed, in terms of magnetic properties In addition, the contact angle can be measured using, for example, a fully automatic contact angle meter (manufactured by Kyowa Interface Science Co., Ltd., PD-W). From the viewpoint of surface flatness of the electronic material, the cleaning of the present invention The surface roughness (Ra) of the surface of the electronic material to be cleaned is preferably 0.5 nm or less, more preferably o.ooi nm to 〇3 nm, particularly preferably 0.05 nm to 0.25 nm. The 'other' surface roughness (Ra) can be measured using E-sweep ' manufactured by SII Nano Technology Co., Ltd. under the following conditions. Measurement mode · DFM (intermittent contact mode, tapping mode) Scanning area: 10 #mxl0 /zm Number of scanning lines: 256 (scanning in the Y direction) Correction: Χ, flat correction in the γ direction, the fourth of the present invention The invention relates to a method for producing an electronic material comprising the step of cleaning an electronic material by the above cleaning method, and is particularly suitable for use as a method of manufacturing a magneto-optical disc substrate, a flat display substrate, and a photomask substrate. [Examples] Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited thereto. Further, the following parts are not particularly limited as long as they are not particularly limited. The molecular weight of the polymer was measured by GPC under the measurement conditions of the above method. Further, the ultrapure water used in the examples and the comparative examples had a specific resistance value of 18 Μ Ω or more. [Manufacturing Example 1] 200923072 In a stainless steel garment press (autoclave) having a volume of 1 liter in a steel mixing device and a temperature control device, a lauryl alcohol portion (i-mole and tetradecyl hydroxide) (hereinafter, For example, TMAH) 25% water-cooled liquid 10 parts (0 027 moles), dehydrated for 3G minutes under the salt pressure conditions of 〇, less than or equal to * sand a. Then _ while controlling the reaction temperature to C Ethylene oxide (hereinafter, abbreviated as E〇) was wound dropwise (9.8 moles) in 3 hours, and then, it was aged at 1 Torr (3 hours) to obtain a crude product. The crude product was kept at 150 C for 2 hours under the condition of a reduction of 2.6 kPa or less, and the residual TMAH was decomposed and removed to obtain a 9-mole EO adduct of a nonionic surfactant, that is, lauryl alcohol (A-1-1). 630 parts. [Manufacturing example 2] A stainless steel high-pressure dad with a stirring device and a temperature control device with a volume of 3,000 parts (1.0 moles) of laurylamine and 3.6 parts of a 25% aqueous TMAH solution. 〇.〇1 moles), dehydrated for 3 minutes at a pressure of 1 〇〇, less than or equal to 4 kPa. Then one The reaction temperature was adjusted to HKTC, and 264 parts of EO (6.0 moles) was added dropwise over 3 hours, followed by aging for 3 hours under l〇〇t: to obtain a crude product. The crude product was less than or equal to Under the reduced pressure of 2.6 kPa, 15 Torr. (: Hold for 2 hours, decompose and remove the remaining TMAH, and obtain a 6-mole E 〇 adduct of non-ionic surfactant, namely laurylamine (Winter ^) 445 [Manufacturing Example 3] In a stainless steel horse pressure dad with a volume of 1 liter with a mixing device and a temperature control device, 212 parts of cumylphenol (1.0 - 41 200923072 moles), And 25% of TMAH aqueous solution (0.008 mol parts), dehydrated under reduced pressure of 100 ° C '4 kPa or less for 30 minutes. Then, while controlling the reaction temperature to 1001, add 3 parts by weight ( 8.0 moles of E 〇, then, at 1 〇〇. The aging was carried out for 3 hours to obtain a crude product. The crude product was kept at a pressure of less than or equal to 2 6 j^Pa at 150 C. In hours, decompose and remove the remaining TMAH' to obtain a nonionic surfactant, ie, cumylphenol. Moer EO adduct (A-1-3) 560 parts. ^ 1 [Production Example 4] 300 parts of isopropanol and 1 part of ultrapure water were added to a reaction vessel which was temperature-adjustable and stirred. After nitrogen substitution, the temperature was raised to 75. Then, 407 parts of a 75% aqueous solution of acrylic acid and a 15% isopropyl alcohol solution of dimethyl-2,2'-azobisisobutyrate were added with stirring. 3 5 hours were simultaneously added dropwise to the reaction vessel. After the end of the addition, at 75. The mixture was stirred for 5 hours, and then ultrapure water was intermittently added to the system so that the mixture of water and isopropanol was not solidified in the system until no isopropyl alcohol was detected.中 DBU (about 450 parts) is used to neutralize the obtained aqueous solution of polyacrylic acid until the pH becomes 7, and the concentration is adjusted with ultrapure water, thereby obtaining an anionic surfactant, that is, polyacrylic acid DBu salt (a -2- 1) 40% aqueous solution. Further, the Mw of the polyacrylic acid DBU salt (A-2-1) was 10,000. [Production Example 5] 1 part of dichloroethylene was placed in a reaction vessel equipped with a stirring device capable of temperature adjustment and reflux, and nitrogen substitution was carried out under stirring, and then the temperature was raised to 90. (:, refluxing of dichloroethylene. Then, 12 parts of styrene, -42-200923072, and 2,2,·1,1,1,isobutyronitrile, and 7 parts of pre-dissolved in 6埽2G of dichlorochloride. The initiator solution was added dropwise to the reaction vessel at the same time for 6 hours, and the addition was carried out: after the completion of the polymerization, the polymerization was carried out for an hour. After the polymerization, the mixture was cooled to 2 〇C' under a nitrogen atmosphere and then the temperature was controlled to 20. (:, - 105 parts of anhydrous sulfuric acid was added dropwise over 1 hour, and after completion of the dropwise addition, a sulfone reaction was further carried out for 3 hours. After the reaction, the solvent was removed by solidification, and then 345 parts of ultrapure water was added thereto to dissolve. Polystyrene aqueous acid solution. Then neutralize the obtained polystyrene water/liquid mixture with 25% TMAH water/glutle solution (about 400 parts) until the pH becomes 7, and then use Ultrapure water is used to adjust the concentration, thereby obtaining an anionic surfactant, a 4% aqueous solution of polystyrenesulfonic acid TMAH salt (A_2_2). In addition, polystyrene TMAH salt (A-2-2) The Mw was 40, and the oximation ratio was 97 〇/〇. [Production Example 6] Naphthalene sulfonate was added to a reaction vessel equipped with a stirring device. 21 parts and 10 parts of ultrapure water, add 8 parts of 37% formaldehyde at 8 rc for 3 hours. After the end of the addition, heat up to l〇5 °c for 25 hours, then cool to room temperature (about hunger )' Then adjust the pH to 6.5 (using about 15 parts of dbu) while adjusting in a water bath to adjust the pH to 6.5 (using about 15 parts of dbu). Add the ultra-pure water to adjust the solid content to peach, and obtain an anionic surfactant. A 4% by weight aqueous solution of DBU salt (Α-2·3) of a naphthalenesulfonic acid famarin condensate. Further, MwA 5,000 〇 of the DBU salt (α-2-3) of the naphthalenesulfonic acid famarin condensate [Production Example 7] In addition to 436 parts of a 70% aqueous monomer solution formed from 227 parts of acrylamide-mercaptopropanesulfonic acid, glyceryl acid-43-200923072 parts and 131 parts of ultrapure water, instead of acrylic acid 75 In the same manner as in Production Example 4, a mixture of water and isopropyl alcohol was removed in the same manner as in Production Example 4 until isopropyl alcohol was not detected, and acrylamide-2-methylpropanesulfonic acid/acrylic acid copolymer was obtained. Aqueous solution. Then, while the obtained aqueous solution of acrylamide 2 - mercaptopropanesulfonic acid / acrylic acid copolymer was adjusted to 25 ° C, DBU was slowly added. The pH was adjusted to 6.5 (using about 280 parts of DBU) and the concentration was adjusted with ultrapure water, thereby obtaining an anionic surfactant, acrylamide-2-methylpropanesulfonic acid/acrylic acid copolymer DBU. In addition, the Mw of the above-mentioned copolymer DBU salt (A-2-4) was 8,000. [Production Example 8] In addition to the use of mercapto propylene oxypolyoxyethylene sulfate 50% aqueous solution of ester sodium salt [manufactured by Sanyo Chemical Co., Ltd., ELEMINOL RS-30] 320 parts and 465 parts of 65% monomer aqueous solution formed by 145 parts of acrylic acid to replace 407 parts of 75% aqueous solution of acrylic acid, and manufacture In the same manner as in Example 4, a mixture of water and isopropyl alcohol was distilled off after the polymerization until no isopropyl alcohol was detected, and an aqueous solution of methacryloxy oxyoxyethylene sulfate sodium salt/acrylic acid copolymer was obtained. Then, the obtained copolymer aqueous solution was diluted with ultrapure water so that the solid content concentration became 10 〇/〇, and the sodium ion in the solution was removed using a cation exchange resin "Amberlite IR-120B" (manufactured by Organo Co., Ltd.). Until the sodium ion in the solution is less than or equal to 1 ppm. Further, the sodium content was measured using an ICP spectrometer (manufactured by VARIAN Co., Ltd., Varian 730-ES). Then, the obtained methacryloxy ethoxylated polyoxyethylene decanoic acid/propionic acid total 200923072 polymer was adjusted to 25 ° C ' while neutralizing the A with 25% TMAH aqueous solution (about 600 parts). Acrylic oxy-polyoxyethylene sulfate/acrylic acid copolymer until the pH is 7, and then the ultra-pure water is used to adjust the concentration, thereby obtaining an anionic surfactant A 10% aqueous solution of ethylene sulfate/acrylic acid copolymer TMAH salt (A-2-5). Further, the Mw of the above copolymer TMAH salt (A-2-5) was 9,000. [Production Example 9] 136 parts of octylbenzenesulfonic acid and 245 parts of ultrapure water were placed in a 1 L beaker, and octylbenzenesulfonic acid was dissolved until the solution became uniform. Then, DBN (about 65 parts) was used to neutralize the obtained aqueous solution of octylbenzenesulfonic acid until the pH became 7, and the concentration was adjusted with ultrapure water, thereby obtaining an anionic surfactant, namely, octyl group. A 40% aqueous solution of a benzoic acid salt (A-2-6). [Production Example 10] 144 parts of 2-ethylhexanoic acid and 3 parts of ultrapure water were placed in a beaker of 丨L. [2: Ethylhexanoic acid was dissolved until the solution (4) was self-contained. Then, diethanolamine (about 105 parts) is used to neutralize the obtained aqueous solution of 2-ethylhexanoic acid until the pH becomes 7, and then ultra-pure water is used to adjust the degree of Han, thereby obtaining an anionic surfactant. A 40% aqueous solution of 2_ethyl.diethyl__. [Production Example 11] 1 attached, the glass reactor of the stirring device and the temperature control device is 256 parts of hexylhexanol, and is cooled to enthalpy under the scramble, and then the temperature of the system (4) is maintained as a generation. 3 hours of dropwise addition of chlorine • 45 · 200923072 Continued 229 parts of acid to obtain sulfuric acid vinegar. Then, it was neutralized with a 48% aqueous solution of hydrogen hydroxide (about 230 parts) until the pH became 7, and then the concentration was adjusted with ultrapure water, thereby obtaining 2-ethylhexanol sulfate of an anionic surfactant. The 40% aqueous solution of the salt (A-2-8) was removed. [Example 1 to Example 56], [Comparative Example 比较 to Comparative Example 8] In each of 1 L of the beaker, at room temperature (about 2 Torr., the components described in Tables i to 8 are shown in Table 1 to The amount of the preparation described in Table 8 was uniformly stirred and mixed, and the cleaning agents of Example 1 to Example 56 and Comparative Example 1 to Comparative Example 8 were prepared. Examples 1 to 26 and Comparative Examples 1 to 1 were compared. The detergent of 5 was directly evaluated as a cleaning liquid at this concentration (dilution ratio of 1), and the cleaning agents of Examples 27 to 56 and Comparative Examples 6 to 8 were diluted to 10 times with ultrapure water. The cleaning liquid was evaluated according to the following evaluation methods. The results are shown in Tables 1 to 8. In addition, the number of the components other than the ultrapure water described in the table is the value obtained by converting the active ingredient. The amount of the ultrapure water described in the table includes the surfactant obtained in Production Examples 1 to η and the ultrapure water in the hydrazine aqueous solution. Further, the chelating agents (β) in Tables 1 to 8 are reduced. The abbreviations of the agent (c), the alkaline component (D), and the water-soluble organic solvent (G) are as follows. EDTA: B Amine tetraacetic acid HEDP: 1-Phenylethylidene-1,1.bisphosphonate: Sodium hexametaphosphate: Ascorbic acid Cys: L-cysteine-46 - 200923072 Sub-sodium sulphate: Sub-acid Single-salt salt MDeA: N-methyldiethanolamine TMAH: tetradecyl ammonium hydroxide DEA: diethanolamine DBU: 1,8-diazabicyclo[5.4, 〇]_7·undecene DEG-B: diethylene Alcohol monobutyl ether - The pH value of the obtained cleaning liquid at 25 ° C was measured using a pH meter (manufactured by Horiba, Ltd. 'M_l2). The oxidation-reduction potential and surface tension were measured by the above method, and by the following Method to evaluate cleanliness - 1 - cleanliness - 6, surface flatness - 丨 ~ surface flatness" 3. Etchability - 1 ~ etchability - 3, contact angle ~ contact angle ~ 3 and dispersibility. Evaluation~1&gt; Using a commercially available decanoic acid paste (having a particle size of about 3 Å) as a polishing agent and a polishing cloth, a 3.5-inch substrate for magneto-optical disk subjected to Ni_P plating was polished, and then ultrapure. Rinse the surface with water and blow the surface with nitrogen to make a contaminated substrate. The cleaning liquid prepared above 1&gt;(8) parts were placed in a 1 L glass beaker, and then the prepared contaminated substrate was immersed in the cleaning liquid, and cleaned in an ultrasonic cleaner (200 kHz) at 3 CTC for 5 minutes. 'Ultra-pure water was thoroughly rinsed, and then the substrate was blown with nitrogen to dry the substrate. The surface of the substrate was evaluated using a differential interference microscope (manufactured by Nikon Corporation, '0PTIPH0T_2, magnification 400 times) according to the following evaluation criteria. Cleanliness. In addition, in order to prevent air pollution, this evaluation was carried out in a clean room with a US federal standard cleanliness (class) of 〇00 (FED_STD_2()9D, 1988). ◎: It can be almost completely removed. 〇: It can be roughly cleaned. △ a small amount of particles remained X: almost impossible to clean &lt;cleanness evaluation 1&gt; In addition to the use of a commercially available alumina slurry (having a particle size of approximately the same as the polishing agent, it was carried out in the same manner as the cleaning evaluation - 清洁; Evaluation No. 3 "Only using a commercially available cerium oxide slurry (particle size of approximately (8) nm) and a polishing cloth as an abrasive to polish a 25-sided magneto-optical disk surface substrate, followed by ultrapure water The surface was washed and the surface was washed with nitrogen to prepare a contaminated substrate, and the evaluation was performed in the same manner as the cleanliness evaluation. <Cleanability Evaluation No. 4> In addition to using a commercially available rock acid paste ( The particle size was about 3 〇 nm), and the evaluation was performed in the same manner as the cleaning property evaluation 3 except for the polishing agent. <Cleanability Evaluation No. 5> Commercially available glass substrate (manufactured by Coming, glass plate #1737 ' 1 〇cmxi〇cm), spread the slope of the glass plate when the glass plate is cut (broken) 5 mg' at 1〇5. (: hotplate (PMC Industries' 'Digital heating plate series 730') Heat for 1 hour, use the resulting In addition, the substrate was evaluated in the same manner as the cleanliness evaluation - i 48-200923072. <Cleanability Evaluation No. 5> A hot plate at 70 ° C (manufactured by PMC Industries, Inc., digital heating plate series 730) On the other hand, 10 mg of n-tric acid (manufactured by Tokyo Chemical Industry Co., Ltd.), which is a sample pollutant, was melted on a commercially available glass substrate (manufactured by Corning, glass plate #1737, 10 cmx10 cm). This prepared the contaminated substrate. Then 100 g of the cleaning solution was placed in a 200 ml f glass beaker, and the prepared contaminated substrate was immersed in the cleaning solution, and cleaned in an ultrasonic cleaner (200 kHz) at 3 (TC). 5 minutes. After cleaning, the substrate was taken out, thoroughly rinsed with ultrapure water, and then the substrate was blown with nitrogen to dry the substrate, and the differential interference microscope (manufactured by Nikon Corporation, OPTIPHOT-2) was used according to the same evaluation criteria as the above-mentioned cleanliness evaluation-1. 'The magnification is 400 times' to evaluate the cleanliness of the substrate surface. In addition, in order to prevent air pollution, the evaluation is at a cleanliness of 1, 〇〇〇 (FED-STD-209D, US United Standards, 1988) in a clean room real 'Shi () &lt;. Flatness of a surface 1 &gt;

將各清潔液取10 ml置於20 ml的玻璃製容器中,並 將溫度調整為30°C,然後,放入將經實施Μ-P電鍍的磁 光碟用铭基板切割成2 cmx2 cm的大小所得的基板,於30 °C下浸潰20分鐘,以此來進行清潔。清潔後,使用小鑷子 (pincette)取出基板,用超純水充分沖洗而除去清潔液, 之後,於室溫下(25。〇)用氮氣吹拂基板以使基板乾燥。 然後使用原子力顯微鏡(atomic force microscope )( SII • 49· 200923072 份有限公㈣造,來測定經 乾燥的;基板表面的表面粗糙度(Ra),評價表面平坦性。 另外,試驗前基板的表面粗糙度(Ra)為〇 25 nm。 &lt;表面平坦性一2&gt; m10 ml of each cleaning solution was placed in a 20 ml glass container, and the temperature was adjusted to 30 ° C. Then, the magneto-optical disc plated with Μ-P plating was cut into a size of 2 cm x 2 cm. The obtained substrate was immersed at 30 ° C for 20 minutes to be cleaned. After cleaning, the substrate was taken out using a pincette, and the cleaning liquid was sufficiently washed with ultrapure water, and then the substrate was blown with nitrogen at room temperature (25 ° C) to dry the substrate. Then, using an atomic force microscope (SII • 49·200923072 parts), the surface roughness (Ra) of the surface of the substrate was measured to evaluate the surface flatness. In addition, the surface roughness of the substrate before the test was evaluated. Degree (Ra) is 〇25 nm. &lt;surface flatness-2&gt; m

將各清潔液取10 ml置於20 ml的破璃匍六哭由. 將溫度調整為3GX:,然後,放人將磁光_玻=板切割 成lcmxlcm的大小所得的基板,於3(rc下浸潰2〇分鐘, 以此來進行清潔。清潔後,使用小鑷子取出基板,用超純 水充分沖洗而除去清潔液,之後,於室溫下(25。匸)用氮 氣吹拂基板以使基板乾燥。然後使用原子力顯微鏡(SHTake 10 ml of each cleaning solution and place it in 20 ml of broken glass. 6. Adjust the temperature to 3GX:, and then put the magneto-glass=plate into a size of lcmxlcm, at 3 (rc) After the dipping for 2 minutes, clean it. After cleaning, use a small tweezers to remove the substrate, rinse thoroughly with ultrapure water to remove the cleaning solution, and then blow the substrate with nitrogen at room temperature (25 ° C). The substrate is dried. Then use an atomic force microscope (SH

Nano Technology股份有限公司製造,e—Sweep)來測定 經乾燦的基板表面的表面粗链度(Ra)’評價表面平坦性。 另外,試驗前基板的表面粗糙度(Ra)為0.20 nm。 &lt;表面平坦性一3&gt; 將各清潔液取10 ml置於20 ml的玻璃製容器中,並 將溫度調整為30°C,然後放入將市售的玻璃基板(Corning 公司製造,玻璃板# 1737,10 cmxlO cm)切割成lcmxl cm 的大小所得的基板,於30°C下浸潰20分鐘,以此來進行 清潔。清潔後,使用小鑷子取出基板,用超純水充分沖洗 而除去清潔液,之後,於室溫下(25°C )用氮氣吹拂基板 以使基板乾燥。然後使用原子力顯微鏡(SII Nano Technology股份有限公司製造,E —Sweep)來測定經乾燥 的基板表面的表面粗糙度(Ra),評價表面平坦性。另外, 試驗前基板的表面粗糙度(Ra)為〇.50nm。 -50- 200923072 &lt;飿刻性一1 &gt; 將各清潔液取100份置於1 L的聚丙烯製容器中,於 該谷器中放入一片3.5英吋的經實施Ni-P電鍍的磁光碟用 鋁基板,在容器上部覆蓋聚偏二氯乙烯製膜而將容器密 封,以使水分不蒸發,然後於溫度調整為23t的室内^置 12小時。靜置後,採集各清潔液,使用ICP光譜分析裳置 (VARIAN公司製造,varian 730-ES )來測定清潔液中的 Ni含量。而且,亦預先以相同的方式對試驗前的各清潔液 ' 進行了见含量測定,求出其中的差,藉此求得試驗中所溶 出的Ni含量(ppm)。該溶出的Ni含量越多,則蝕刻性越 局。 &lt;姓刻性一 2 &gt; 將各清潔液取100份置於1 L的聚丙稀製容器中,於 該容器中放入一片2.5英吋的磁光碟用玻璃基板,在容器 上部覆蓋聚偏二氯乙烯製膜而將容器密封,以使水分不蒸 發,然後於溫度調整為23°C的室内靜置12小時。靜置後, 〇 採集各清潔液,使用ICP光譜分析裝置(y^RIAN公司製 造,Varian 730 —ES)來測定清潔液中的Si含量。而且, 亦預先以相同的方式對試驗前的各清潔液進行了 Si含量 測定,求出其中的差,藉此求得試驗中所溶出的Si含量 (ppb)。該溶出的Si含量越多,則钱刻性越高。 &lt;餘刻性一3 &gt; 將各清潔液取10份置於50 ml的聚丙烯製容器中,並 將溫度調整為50°C,之後放入將市售的玻璃基板(Coming -51- 200923072 a 1 衣玻璃板# 1737,l〇 cmxi〇 cm)切割成 2 cmx2 cm 的大小所得的基板’於5(rc下浸潰、靜置24小時之後, 採集/月潔液’使用ICP光譜分析裝置(VARIAN公司製造, Vanan 730 —ES)來測定清潔液中的別含量。而且,亦預 先以相同的方式對試驗前的清潔液進行了 §1含量測定,求 出其中的差’藉此求得試驗中所溶出的Si含量(ppb)。該 溶出的Si含量越多,則_性越高。The surface roughness was evaluated by measuring the surface roughness (Ra) of the surface of the dried substrate by the Nano Technology Co., Ltd., e-Sweep. Further, the surface roughness (Ra) of the substrate before the test was 0.20 nm. &lt;Surface flatness-1&gt; 10 ml of each cleaning liquid was placed in a 20 ml glass container, and the temperature was adjusted to 30 ° C, and then placed in a commercially available glass substrate (manufactured by Corning, glass plate) #1737, 10 cmxlO cm) The substrate obtained by cutting into a size of lcmxl cm was immersed at 30 ° C for 20 minutes to clean. After the cleaning, the substrate was taken out using a small tweezers, and the cleaning liquid was sufficiently washed with ultrapure water, and then the substrate was blown with nitrogen at room temperature (25 ° C) to dry the substrate. Then, the surface roughness (Ra) of the surface of the dried substrate was measured using an atomic force microscope (manufactured by SII Nano Technology Co., Ltd., E-Sweep), and the surface flatness was evaluated. Further, the surface roughness (Ra) of the substrate before the test was 〇.50 nm. -50- 200923072 &lt;etching property 1&gt; 100 parts of each cleaning solution was placed in a 1 L polypropylene container, and a 3.5-inch piece of Ni-P plating was placed in the barn. The aluminum substrate for a magneto-optical disk was covered with a polyvinylidene chloride film on the upper portion of the container to seal the container so that the water did not evaporate, and then placed in a room where the temperature was adjusted to 23 t for 12 hours. After standing, each of the cleaning liquids was collected, and the content of Ni in the cleaning liquid was measured by ICP spectroscopic analysis (varian 730-ES, manufactured by VARIAN Co., Ltd.). Further, the contents of each of the cleaning liquids before the test were measured in the same manner in advance, and the difference therebetween was determined to determine the Ni content (ppm) eluted in the test. The more the Ni content of the elution, the more the etching property is. &lt;Name of the first one &gt; 100 parts of each cleaning solution was placed in a 1 L polypropylene container, and a 2.5-inch glass substrate for magneto-optical discs was placed in the container, and the upper part of the container was covered with a mixture. The container was sealed with dichloroethylene to seal the container so that the water did not evaporate, and then allowed to stand in a room where the temperature was adjusted to 23 ° C for 12 hours. After standing, 各 each cleaning liquid was collected, and the Si content in the cleaning liquid was measured using an ICP spectrometer (manufactured by y^RIAN, Varian 730-ES). Further, the Si content of each of the cleaning liquids before the test was measured in the same manner in advance, and the difference therebetween was determined to determine the Si content (ppb) eluted in the test. The more the Si content is eluted, the higher the money is. &lt;Residuality 3 &gt; 10 parts of each cleaning liquid was placed in a 50 ml polypropylene container, and the temperature was adjusted to 50 ° C, and then placed on a commercially available glass substrate (Coming -51- 200923072 a 1 衣玻璃板# 1737, l〇cmxi〇cm) The substrate obtained by cutting into a size of 2 cmx2 cm 'after immersion in rc, standing for 24 hours, collecting/month cleaning solution' using ICP spectroscopy The device (manufactured by VARIAN Co., Ltd., Vanan 730-ES) was used to determine the content of the cleaning liquid. Moreover, the §1 content of the cleaning liquid before the test was measured in the same manner in advance, and the difference was determined. The Si content (ppb) dissolved in the test was obtained. The more the dissolved Si content, the higher the _ property.

&lt;接觸角測定—1 &gt; 對在上述清潔性試驗Η中經評價的基板,立即使用 王自動接觸角儀[協和界面科學股份有限公司製造,pD一 W]來測定該基板相對於水的接觸角(25t、1秒後)。 &lt;接觸角測定一2&gt; 對在上述清潔性試驗—3中經評價的基板,立即使用 ,自動接觸角儀[協和界㈣學股份有限公司製造 ,PD- W]來測賴基板相對於水的接觸角(25t:、1秒後)。 &lt;接觸角測定一3 &gt; 對在上述清潔輯驗—5巾經評價的絲,立即使用 2動,角儀[協和界面科學股份有限公司製造,PD — 測定該基板相對於水的接觸角(25°C、1秒後)。 &lt;分散性評價&gt; 办哭ί u液取3G份置於5G ml的玻璃製容器中,於該 姐r4”添加上述清潔性評價—4中所使用的市售石夕酸膠漿 僅約為3〇nm)0.3份,使用磁攪拌器(magnetic stirrer) 分鐘。靜置5分鐘之後,使用動態光散射式粒徑分 -52- 200923072 布測定裝置[堀場製作所股份有限公司製造,LB —550V]測 定粒徑(中值粒徑)。粒徑越小則分散性越優異。&lt;Contact angle measurement - 1 &gt; For the substrate evaluated in the above cleaning test, the substrate was immediately measured using a Wang automatic contact angle meter [manufactured by Kyowa Interface Science Co., Ltd., pD-W] to measure the substrate relative to water. Contact angle (25t, 1 second later). &lt;Contact angle measurement-2&gt; The substrate evaluated in the above-mentioned cleaning test-3 was used immediately, and an automatic contact angle meter [manufactured by Xiehejiesi Co., Ltd., PD-W] was used to measure the substrate relative to water. Contact angle (25t:, after 1 second). &lt;Contact angle measurement 1 &gt; For the wire evaluated in the above-mentioned cleaning test - 5 towels, 2 movements were used immediately, and the angle meter [manufactured by Kyowa Interface Science Co., Ltd., PD - measured the contact angle of the substrate with respect to water] (25 ° C, after 1 second). &lt;Dispersibility evaluation&gt; The 3G parts of the crying liquid were placed in a glass container of 5 G ml, and the commercially available rock acid paste used in the above-mentioned cleaning evaluation-4 was added only to the sister r4". 0.3 parts of 3 〇 nm), using a magnetic stirrer for a minute. After standing for 5 minutes, using a dynamic light scattering type particle size-52-200923072 cloth measuring device [manufactured by Horiba, Ltd., LB - 550V The particle size (median diameter) is measured. The smaller the particle diameter, the more excellent the dispersibility.

L -53- 200923072[表1] 實施例 非離子性界面活性劑 (A-1) (A-1-2) (A-1-3) (A-2-1) (A-2-2) (A-2-3) 0.4 0.2 0.2 0.4 0.7 0.5 0.5 0.5 陰離子性界面活性劑 (A-2) (A-2-4) (A-2-5) (A-2-6) (A-2-7) (A-2-8) 對甲笨磺酸 0.2 0.2 0.2 0.2 調配量{份)L -53- 200923072 [Table 1] Example Nonionic Surfactant (A-1) (A-1-2) (A-1-3) (A-2-1) (A-2-2) (A-2-3) 0.4 0.2 0.2 0.4 0.7 0.5 0.5 0.5 Anionic surfactant (A-2) (A-2-4) (A-2-5) (A-2-6) (A-2 -7) (A-2-8) 0.2% 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2

EDTA 0.2 0.2 0.2 螯合劑¢)EDTA 0.2 0.2 0.2 Chelating Agent ¢)

HEDP 0.2 0.2 0.2 0.2 0.2 0.2 0.05 0.05 0.05HEDP 0.2 0.2 0.2 0.2 0.2 0.2 0.05 0.05

Cys 甲醛 0.05 0.05 0.05 0.05 還原劑(C) 亞硫酸 二亞硫磺酸 亞磷酸氫酸 次填酸一销 0.05 0.05 0.05Cys formaldehyde 0.05 0.05 0.05 0.05 reducing agent (C) sulfurous acid disulfinous acid hydrogen phosphite hydrogen peroxide one charge 0.05 0.05

MDEA 0.2 0.2 鹼性成分(D)MDEA 0.2 0.2 alkaline component (D)

DEA 0.3 0.2DEA 0.3 0.2

DBU 0.3 水溶性有機溶劑(G) 水 稀釋倍率 pH值_ 及式(1)&amp;右4部 氧化還原電位(mV)DBU 0.3 Water-soluble organic solvent (G) Water Dilution ratio pH value _ and formula (1) &amp; right 4 oxidation-reduction potential (mV)

DEG-B 超純水 98.2 98.1 97.5 98.1 98.5 98.9 98.1 97.9 98.6 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 231 116 229 277 125 272 評 價 結 果 表面張力(mN/m) 清潔性一 1 清潔性一 2 表面平坦性一 1 [表面粗链度Ra(nm)] 蚀刻性一 1 [Ni含量(ppm)] 接觸角一 1〇 分散性(nm) 27 ◎ ◎ 0.25 11.3 8.1 46 26 ◎ ◎ 0.25 11.8 7.3 48 25 25 34 30 30 30 32 65 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 0.26 0.28 0.25 0.27 0.26 0.26 0.28 0.25 12.0 14.0 12.1 14.5 13.6 13.0 14.2 12.2 6.5 6.8 8.5 9.0 9.1 8.6 9.2 7.5 47 48 46 33 32 34 36 43 -54- 200923072 [表2] 實施例 調配量(份) 評償結果 11 12 13 14 15 16 17 18 19 20 非離子性界面活性劑 (A-1) (A-1-1) 0.2 0.2 0.2 0.2 - 0.2 0.2 0.2 0.2 0.2 (A-1-2) - - - - 0.2 - - - - - (A-1-3) 陰離子性界面活性劑 (A-2) (A-2-1) 1 - - 1 (A-2-2) - - - - - - 睡 - - - (A-2^3) - 1 - - 1 1 1 - 1 1 (A-2-4) - - 1 (A-2-5) - - - - - - - - - - (A-2-6) (A-2-7) (A-2-8) 墨 - - - - 0.2 - - - - 對甲苯磺酸 0,2 1 0.2 0.2 螯合劑(B) EDTA - 0.2 - - 0.2 - - - - - HEDP - - - 0.2 - 0.2 0.2 0.2 0.2 0.2 HMP 0.2 - 還原劑(C) AA 0.05 - - - 0.05 - - - - - Cys - 0.05 - 0.05 - - - - 0.05 - 甲醛 0.05 亞硫酸 - 二亞硫確酸 亞磷酸氫酸 次磷酸一鈉 - 0.05 - - 0.05 0.05 0.05 - - MDEA 鹼性成分(D) TMAH - 0.2 - - 0.6 - - - - - DEA - - 0.01 - 0.25 0.4 0.3 0.4 0.4 DBU 0.08 - - 0.3 - - - 1 - - 水溶性有機溶劑(G) DEG-B 水 超純水 98.5 98.3 98.7 98.2 98.0 98.1 98.0 97.3 98.0 98.0 稀釋倍率 1 1 1 1 1 1 1 1 1 1 pH值 8.5 8.5 8.5 5.0 13.0 6.5 6.5 6.5 6.5 6.5 數式(1)的右邊部分的值 221 221 221 357 47 298 298 298 298 298 氧化還原電位(mV) 162 43 213 171 5 280 278 273 128 223 表面張力(mN/m) 30 30 30 30 34 24 30 31 30 31 清潔性一1 ◎ ◎ ◎ ◎ 〇 ◎ ◎ ◎ ◎ ◎ 清潔性一2 ◎ ◎ ◎ 〇 〇 ◎ ◎ ◎ ◎ ◎ 表面平坦性一 1 [表面輕核:度Ra(nm)] 0.25 0.26 0.25 0.32 0.25 0.25 0.25 0.29 0.24 0.25 姓刻性一l[Ni含量(ppm)] 11.9 13.8 12.4 15.0 9.8 14.0 14.2 12.8 14.1 14.0 接觸角一 1(°) 8.7 8.7 8.9 8.5 10.5 8.7 8.6 9.2 6.8 8.0 分散性(nm) 46 48 47 47 46 34 33 55 33 34 -55- 200923072 [表3]DEG-B ultrapure water 98.2 98.1 97.5 98.1 98.5 98.9 98.1 97.9 98.6 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 231 116 229 277 125 272 Evaluation results Surface tension (mN/m) Cleanliness 1 Cleanability 1 Surface flat Properties-1 [Surface Thickness Ra(nm)] Etchability-1 [Ni content (ppm)] Contact angle - 1 〇 Dispersibility (nm) 27 ◎ ◎ 0.25 11.3 8.1 46 26 ◎ ◎ 0.25 11.8 7.3 48 25 25 34 30 30 30 32 65 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 0.26 0.28 0.25 0.27 0.26 0.26 0.28 0.25 12.0 14.0 12.1 14.5 13.6 13.0 14.2 12.2 6.5 6.8 8.5 9.0 9.1 8.6 9.2 7.5 47 48 46 33 32 34 36 43 -54- 200923072 [Table 2] Example formulation amount (parts) Evaluation result 11 12 13 14 15 16 17 18 19 20 Nonionic surfactant (A-1) (A-1-1) 0.2 0.2 0.2 0.2 - 0.2 0.2 0.2 0.2 0.2 (A-1-2) - - - - 0.2 - - - - - (A-1-3) Anionic surfactant (A-2) (A-2-1 ) 1 - - 1 (A-2-2) - - - - - - Sleep - - - (A-2^3) - 1 - - 1 1 1 - 1 1 (A-2-4) - - 1 ( A-2-5) - - - - - - - - - - (A-2-6) (A-2-7) (A-2-8) Ink - - - - 0.2 - - - - p-Toluenesulfonic acid 0,2 1 0.2 0.2 Chelating agent (B) EDTA - 0.2 - - 0.2 - - - - - HEDP - - - 0.2 - 0.2 0.2 0.2 0.2 0.2 HMP 0.2 - reducing agent (C) AA 0.05 - - - 0.05 - - - - - Cys - 0.05 - 0.05 - - - - 0.05 - Formaldehyde 0.05 Sulfuric acid - Disulfide acid hydrogen phosphite hypophosphorous acid Monosodium - 0.05 - - 0.05 0.05 - - MDEA Alkaline Component (D) TMAH - 0.2 - - 0.6 - - - - - DEA - - 0.01 - 0.25 0.4 0.3 0.4 0.4 DBU 0.08 - - 0.3 - - - 1 - - Water-soluble organic solvent (G) DEG-B water ultrapure water 98.5 98.3 98.7 98.2 98.0 98.1 98.0 97.3 98.0 98.0 Dilution ratio 1 1 1 1 1 1 1 1 1 1 pH 8.5 8.5 8.5 5.0 13.0 6.5 6.5 6.5 6.5 6.5 Number Value of the right part of (1) 221 221 221 357 47 298 298 298 298 298 Oxidation reduction potential (mV) 162 43 213 171 5 280 278 273 128 223 Surface tension (mN/m) 30 30 30 30 34 24 30 31 30 31 Cleanability 1 ◎ ◎ ◎ ◎ 〇 ◎ ◎ ◎ ◎ ◎ Cleanability 2 ◎ ◎ ◎ 〇〇 ◎ ◎ ◎ ◎ ◎ Surface flatness-1 [Surface light core: degree Ra (nm)] 0.25 0.26 0.25 0.32 0.25 0.25 0.25 0.29 0.24 0.25 Last name l [Ni content (ppm)] 11.9 13.8 12.4 15.0 9.8 14.0 14.2 12.8 14.1 14.0 Contact angle -1 (°) 8.7 8.7 8.9 8.5 10.5 8.7 8.6 9.2 6.8 8.0 Dispersibility (nm) 46 48 47 47 46 34 33 55 33 34 -55- 200923072 [Table 3]

實施例 21 22 23 24 25 26 調 配 量 非離子性界面活性劑(A-1) (A-M) 0.2 0.2 0.2 0.2 0.2 0.2 (A-1-2) - - - - - - (A-1-3) - - - - - - 陰離子性界面活性劑(A-2) (A-2-1) - - - - - - (A-2-2) - - - - - - (A-2-3) 1 1 1 1 1 1 (A-2-4) - - - - - - (A-2-5) - - - - - (A-2-6) - - - - (A-2-7) - - - - - - (A-2-8) - - - - - - 對甲苯磺酸 0.2 0.2 0.2 0.2 0.2 0.2 螯合劑(B) EDTA - - - - - - HEDP 0.2 0.2 0.2 0.2 0.2 0.2 HMP - - _ - - 0.2 還原劑(C) AA - - - - - - Cys - - - - 0.05 0.05 甲醛 - - - - - - 亞疏酸 0.05 麵 - - - - 二亞硫磺酸 - 0.05 - - - 亞磷酸氫酸 - - 0.05 - - - 次磷酸一鈉 MDEA - - - 0.05 - - 鹼性成分(D) TMAH - - - - - DEA 0.45 0.45 0.45 0.45 0.4 0.4 DBU - - - - - 水溶性有機溶劑(G) DEG-B - - - - 0.5 - 水 超純水 97.9 97.9 97.9 97.9 97.5 97.8 稀釋倍率 1 1 1 1 1 1 評 價 結 果 pH值 6.5 6.5 6.5 6.5 6.5 6.0 數式(1)的右邊部分的值 298 298 298 298 298 318 氧化還原電位(mV) 270 268 278 284 123 134 表面張力(mN/m) 30 30 30 29 26 32 清潔性一1 ◎ ◎ ◎ ◎ ◎ ◎ 清潔性一2 ◎ ◎ ◎ ◎ ◎ ◎ 表面平坦性-1 [表面粗链度Ra(nm)] 0.25 0.25 0.25 0.26 0.24 0.25 姓刻性-1 [Ni含量(ppm)] 13.8 13.9 14.0 13.3 13.6 15.6 接觸角-l〇 7.8 7.9 8.4 8.8 6.3 6.1 分散性(nm) 33 33 34 33 30 34 -56- 200923072 [表4]Example 21 22 23 24 25 26 Formulation amount of nonionic surfactant (A-1) (AM) 0.2 0.2 0.2 0.2 0.2 0.2 (A-1-2) - - - - - - (A-1-3) - - - - - - Anionic surfactant (A-2) (A-2-1) - - - - - - (A-2-2) - - - - - - (A-2-3) 1 1 1 1 1 1 (A-2-4) - - - - - - (A-2-5) - - - - - (A-2-6) - - - - (A-2-7) - - - - - - (A-2-8) - - - - - - p-toluenesulfonic acid 0.2 0.2 0.2 0.2 0.2 0.2 Chelating agent (B) EDTA - - - - - - HEDP 0.2 0.2 0.2 0.2 0.2 0.2 HMP - - _ - - 0.2 Reducing agent (C) AA - - - - - - Cys - - - - 0.05 0.05 Formaldehyde - - - - - - - Acidic acid 0.05 Noodles - - - - Disulfuric acid - 0.05 - - - Hydrogen phosphite Acid - - 0.05 - - - Monosodium hypophosphite MDEA - - - 0.05 - - Alkaline component (D) TMAH - - - - - DEA 0.45 0.45 0.45 0.45 0.4 0.4 DBU - - - - - Water-soluble organic solvent (G) DEG-B - - - - 0.5 - Water ultrapure water 97.9 97.9 97.9 97.9 97.5 97.8 Dilution ratio 1 1 1 1 1 1 Evaluation result pH 6.5 6.5 6.5 6.5 6.5 6.0 Value of the right part of the formula (1) 298 298 298 298 298 318 Oxidation reduction potential (mV) 2 70 268 278 284 123 134 Surface tension (mN/m) 30 30 30 29 26 32 Cleanability-1 ◎ ◎ ◎ ◎ ◎ ◎ Cleanability 2 ◎ ◎ ◎ ◎ ◎ ◎ Surface flatness-1 [Surface thick chain Ra (nm)] 0.25 0.25 0.25 0.26 0.24 0.25 Last name -1 [Ni content (ppm)] 13.8 13.9 14.0 13.3 13.6 15.6 Contact angle - l〇7.8 7.9 8.4 8.8 6.3 6.1 Dispersibility (nm) 33 33 34 33 30 34 -56- 200923072 [Table 4]

比較例 1 2 3 4 5 調 配 量 § 非離子性界面活性劑(A-1) (A-1-1) 0.2 - 0.2 0.2 0.2 (A-1-2) - 0.2 - - - (A-1-3) - - - - 陰離子性界面活性劑(A-2) (A-2-1) 1 - 1 - 1 (A-2-2) - - - - - (A-2-3) - 1 - 1 - (A-2-4) - - - - - (A-2-5) - - - - - (A-2-6) - - - - - (A-2-7) - - - - (A-2-8) - - - - 對甲苯績酸 - - - - - 螯合劑(B) EDTA - - 0.2 - - HEDP 0.2 0.2 - - - HMP - - - 0.2 0.2 還原劑(C) AA - - - - - Cys - - - - 甲醛 - - - - - 亞硫酸 - - - - - 二亞硫績酸 - - - - - 亞磷酸氫酸 - - - - - 次填酸一納 - - - - - MDEA - - - - - 鹼性成分(D) TMAH 0.2 - 0.2 - - DEA - - - - DBU - 2.0 - - - 水溶性有機溶劑(G) DEG-B - - - - - 水 超純水 98.4 96.6 98.4 98.6 98.6 稀釋倍率 1 1 1 1 1 評 價 結 果 pH值 4.0 13.5 6.5 6.5 8.5 數式(1)的右邊部分的值 395 28 298 298 221 氧化還原電位(mV ) 441 74 350 344 267 表面張力(mN/m) 30 28 30 30 32 清潔性—1 Δ △ Δ Δ 〇 清潔性-2 X △ X X Δ 表面平坦性-1 [表面粗糙度Ra(nm)] 0.42 0.26 0.32 0.35 0.31 蝕刻性-l[Ni含量(ppm)] 20.5 9.4 15.5 16.3 15.1 接觸角—1〇 20.1 19.5 20.3 20.5 22.0 分散性(nm) 576 1012 489 815 460 -57- 200923072 [表5]Comparative Example 1 2 3 4 5 Formulation amount § Nonionic surfactant (A-1) (A-1-1) 0.2 - 0.2 0.2 0.2 (A-1-2) - 0.2 - - - (A-1- 3) - - - - Anionic surfactant (A-2) (A-2-1) 1 - 1 - 1 (A-2-2) - - - - - (A-2-3) - 1 - 1 - (A-2-4) - - - - - (A-2-5) - - - - - (A-2-6) - - - - - (A-2-7) - - - - ( A-2-8) - - - - p-toluene acid - - - - - chelating agent (B) EDTA - - 0.2 - - HEDP 0.2 0.2 - - - HMP - - - 0.2 0.2 reducing agent (C) AA - - - - - Cys - - - - Formaldehyde - - - - - Sulfite - - - - - Disulfide acid - - - - - Hydrogen phosphite - - - - - Sub-sodium acid - - - - - - MDEA - - - - - Alkaline Ingredients (D) TMAH 0.2 - 0.2 - - DEA - - - - DBU - 2.0 - - - Water Soluble Organic Solvent (G) DEG-B - - - - - Water Ultrapure Water 98.4 96.6 98.4 98.6 98.6 Dilution ratio 1 1 1 1 1 Evaluation result pH 4.0 13.5 6.5 6.5 8.5 Value of the right part of equation (1) 395 28 298 298 221 Oxidation reduction potential (mV) 441 74 350 344 267 Surface tension (mN/ m) 30 28 30 30 32 Cleanability - 1 Δ △ Δ Δ 〇 Cleanability - 2 X △ XX Δ Surface flatness-1 [Surface roughness Ra (nm)] 0.42 0.26 0.32 0.35 0.31 Etchability - l [Ni content (ppm)] 20.5 9.4 15.5 16.3 15.1 Contact angle - 1 〇 20.1 19.5 20.3 20.5 22.0 Dispersibility (nm) 576 1012 489 815 460 -57- 200923072 [Table 5]

實施例 27 28 29 30 31 32 33 34 35 36 調 配 * 非離子性界面活性 劑(A-1) (A-1-1) 0.2 0.1 - • 0.1 0.1 0.01 (Α-1·2) 0.2 - 0.05 • • _ (Α·1·3) • . • 0.5 • • • 陰離子性界面活性 刺(A-2) (Α-2-1) 0.1 - 0.5 • 0.1 _ (Α·2·2) 0.1 (Α·2·3) • 0.1 0.1 . 0.05 (Α-2-4) - - 0.1 - • 0.1 • (Α-2.5) . 0.1 . • _ (Α-2^6) - - - 0.1 0.1 0.1 • (Α·2·7) . . 0.1 • (Α·2·8) 間二甲苯磺酸 螯合劑(B) 檸樣酸 0.1 0.1 • 0,1 _ HEDP - - 0.1 0.1 • • HMP - 0.2 0.2 0.2 0.2 還原劑(C) AA 0.5 0.5 垂 • 0.5 . 0.5 Cys 0.5 - 0.5 0.5 _ 甲醛 _ 亞硫酸 二亞硫磺酸 _ 亞磷酸氫酸 _ 次碟酸·一納 - - - 0.5 - 0.5 0.5 • MDEA 鹼性成分(D) DBU 氩氧化納 水溶性有機溶劑(G) DEG-B 其他添加劑(H) [pH值調整射] 胺磺酸 1.0 - 7.0 3.5 - 0.8 • 0.5 磷酸 - - • 1.5 - 0.4 _ 1.5 水 超純水 98.1 99.1 99.2 922 97.4 95.1 98.7 98.4 97.6 98.7 稀釋倍率 10 10 10 10 10 10 10 10 10 10 評 價 結 果 pH值 2.0 4.5 3.0 1.5 2.0 1.8 2.5 2.2 2.0 2.3 數式⑴的右邊部分的值 473 376 434 492 473 480 453 465 473 461 氧化還原電位(mV) 395 214 360 444 323 294 412 388 428 392 表面張力(mN/m) 40 35 45 52 42 34 38 32 33 60 清潔性一3 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 清潔性_4 ◎ ◎ ◎ 〇 ◎ 〇 ◎ ◎ ◎ ◎ 清潔性一 5 ◎ ◎ ◎ 〇 ◎ ◎ ◎ ◎ ◎ ◎ 清潔性_6 ◎ ◎ ◎ 〇 ◎ ◎ ◎ ◎ ◎ ◎ 表面平坦性~2【表面粗故度Ra(mn)] 0.21 0.20 0.20 0.22 0.23 0.21 0.22 0.20 0.21 0.20 表面平坦性一3[表面粗糙度Ra(nm)l 0.79 0.75 0.77 0.76 0.77 0.79 0.82 0.83 0.83 0.86 蝕刻性_2[Si含量(ppb)l 1400 1050 1100 1600 1350 1550 1150 1200 1400 1200 蝕刻性一3[Si含量(ppb)l 720 580 600 760 710 730 630 690 720 670 接觸角一 2〇 5.1 6.4 6.0 5.5 4.8 6.2 5.7 5.6 5.5 6.0 接觸角一3(.) 8.0 7.8 7.6 8.5 8.0 8.3 7.9 7.7 8.1 7.9 分散性(nm) 46 46 48 47 46 47 48 48 48 51 -58 - 200923072 [表6] 實施例 調S量(份) 評償結果 37 38 39 40 41 42 43 44 45 46 非離子性界面活性 劑(A-1) (A-1-1) - 0.1 0.1 0.1 - - 0.01 0.1 0.1 0.1 (A-1-2) - - - - - - - - - . (A 小 3) - - - - - - - - . 陰離子性界面活性 劑(A-2) (A-2-1) - 0.1 0.1 0.1 0.1 0.1 - 0.1 0.1 (A-2-2) - - - - - - - . - • (A-2-3) - - - - - - - • (A-2-4) 0.1 (A-2-5) - - - - - - - - - . (A-2-6) - - - - - - - - - (A-2-7) - - - - - 圓 - - - . (A-2-8) - 0.3 0.3 0.3 - 0.05 間二甲苯磺酸 - - - - 0.3 0.3 - . 0.3 0.1 螯合劑(B) 檸檬酸 0.1 . HEDP - 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 HMP • 還原劑(C) AA 0.5 • Cys - • 0.5 甲醛 _ . 亞硫酸 - • *—亞碗確酸 亞磷酸氫酸 次磷酸一鈉 MDEA - 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 • 鹼性成分(D) DBU - - 0.1 0.10 - 0.4 0.10 - - 0.2 氫氧化鈉 - 0.35 - - 0.7 - - 0.35 0.55 . 水溶性有機溶劑(G) DEG-B 其他添加劑(H) [pH值調整剤] 胺磺酸 0.5 磷酸 - 0.4 水 超純水 98.8 98.6 98.8 98.8 98.3 98.6 99.2^ 98.9 98.5 98.5 稀釋倍率 10 10 10 10 10 10 10 10 10 10 pH值 2.3 12.5 10.0 8.5 12.5 10.0 8.0 12.5 12.5 2.5 數式(1)的右邊部分的值 461 66 163 221 66 163 240 66 66 453 氧化還原電位(mV) 390 40 106 161 39 97 158 54 58 270 表面張力(mN/m) 65 32 33 35 48 49 58 38 35 39 清潔性一3 ◎ 〇 〇 ◎ 〇 〇 ◎ 〇 〇 ◎ 清潔性一4 ◎ ◎ ◎ ◎ ◎ ◎ 〇 ◎ ◎ ◎ 清潔性一 5 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 清潔性一6 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 表面平坦性一 2[表面粗輪度Ra(nm)] 0.21 0.25 0.24 0.22 0.24 0.23 0.22 0.27 0.29 0.20 表面平坦性一3[表面粗棱度Ra(nm)] 0.84 0.64 0.60 0.53 0.61 0.56 0.77 0.67 0.78 0.60 蝕刻性_2[Si含量(ppb)] 1200 1550 1450 1300 1500 1450 1200 1550 1550 1200 蝕刻性一3[Si含量(ppb)] 660 800 760 700 780 750 680 680 620 640 接觸角一2〇 6.2 6.1 6.3 6.8 6.1 6.4 7.2 6.9 7.1 4.7 接觸角一3〇 7.7 6.8 7.2 7.8 6.7 7.3 7.8 8.7 8.9 6.5 分散性(nm) 46 34 33 35 34 34 60 55 58 32 -59- 200923072 [表7] 調配量(份) /1¾ 實施例 評價結果 47 48 49 50 51 52 53 54 55 56 非離子性界面活性 劑(A-1) (A-1-1) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (A-1-2) - (A-1-3) - - - - - - - - - . 陰離子性界面活性 劑(A-2) (A-2-1) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (A-2-2) - - - - - - - - - - (A-2-3) - - - - - - - - • (A-2-4) (A-2-5) - - - - - - - - - (A-2-6) - - - - - - - - . (A-2-7) - - - - - - - - • (A-2-8) 間二甲笨績酸 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 螯合劑(B) 檸檬酸 - • HEDP 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 HMP 0.1 0.1 還原劑(C) AA - • Cys - - - - - 0.5 0.5 0.5 0.5 甲醛 0.5 • 亞硫酸 0.5 - - 二亞硫磺酸 - 0.5 - - - - - _ . 亞磷酸氫酸 - - - 0.5 - - - • . 次磷酸一鈉 - - - - 0,5 - • MDEA - - - - - 0.5 - - - - 驗性成分(D) DBU 0.2 0.7 0.7 0.7 0.7 0.2 0.2 - 0.2 . 氫氧化納 0.45 • 0.45 水溶性有機溶劑(G) DEG-B 0.5 0.5 - - 其他添加劑(H) [pH值調整劑] 胺磺酸 • 磷酸 0.4 0.4 0.4 0.4 0.4 0.4 0.4 - 0.4 • 水 超純水 98.5 98.0 98.0 98.0 98.0 98.5 98.0 98.2 98.4 98.6 稀釋倍率 10 10 10 10 10 10 10 10 10 10 pH值 2.5 2.5 2.5 2.5 2.5 2.5 2.5 12.5 2.5 12.0 數式(1)的右邊部分的值 453 453 453 453 453 453 453 66 453 86 氧化還原電位(mV) 396 409 410 403 401 427 266 35 274 43 表面張力(niN/m) 38 37 38 37 36 38 30 28 36 34 清潔性一3 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 〇 ◎ 〇 清潔性_4 ◎ ◎ ◎ ◎ ◎ 〇 ◎ ◎ ◎ ◎ 清潔性一 5 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 清潔性6 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ 表面平坦性一 2[表面粗糙度Ra(nm)] 0.20 0.21 0.21 0.22 0.22 0.22 0.19 0.20 0.20 0.21 表面平坦性一3[表面粗糖度Ra(nm)] 0.64 0.68 0.68 0.67 0:67 0.70 0.55 0.53 0.58 0.55 蝕刻性一2[Si含量(ppb)] 1250 1250 1250 1250 1250 1100 1200 1500 1500 1650 蝕刻性一3[Si含量(ppb)] 650 640 640 650 640 640 620 630 680 660 接觸角一2〇 5.8 6.4 6.5 6.5 6.6 6.7 4.5 6.8 4.3 6.9 接觸角一 6.8 7.0 6.9 7.0 7.1 7.4 6.0 6.1 6.4 6.2 分散性(mn) 31 32 33 33 32 34 30 30 36 35 -60- 200923072 [表8] i 調配量(份) 評價結果 比較例 6 7 8 非離子性界面活性劑(A-1) (A-1-1) 0.2 0.2 0.1 (A-1-2) - - (A-1-3) - . • 陰離子性界面活性劑(A-2) (A-2-1) 0.1 • 0.1 (A-2-2) - . (A-2-3) - 0.1 . (A-2-4) - . (A-2-5) • (A-2-6) - - (A-2-7) - - - (A-2-8) - 03 間二甲苯磺酸 - • 螯合劑(B) 檸檬酸 0.1 - HEDP - 0.1 HMP 0.2 • 還原劑(C) AA - . Cys • - 甲醛 - - 亞硫酸 • -—亞硫確酸 - . 亞磷酸氫酸 - 次磷酸一鈉 - . - MDEA 隱 • 鹼性成分(D) DBU - 氫氧化鈉 - . 0.45 水溶性有機溶劑(G) DEG-B - . - 其他添加劑(H) [pH值調整劑] 胺磺酸 - 1.0 • 磷酸 墨 - 水 超純水 99.6 98.5 99.0 稀釋倍率 10 10 10 pH值 5.5 2.0 12.3 數式(1)的右邊部分的值 337 473 74 氧化還原電位(mV) 394 565 167 表面張力(mN/m) 40 40 42 清潔性一3 Δ 〇 X 清潔性_4 〇 X 〇 清潔性一5 △ X Δ 清潔性_6 X X 〇 表面平坦性一2[表面粗糙度Ra(mn)] 0.20 0.28 0.34 表面平坦性一 3 [表面粗楼度Ra(ran)] 1.12 1.34 1.05 蝕刻性_2[Si含量(ppb)] 500 800 300 蝕刻性一3[Si含量(ppb)] 350 650 550 接觸角一·2〇 10.2 8.5 15.6 接觸角一3〇 18.6 13.2 9.4 分散性(nm) 422 1007 576 •61- 200923072 久錄其μ〜表 果可知,本㈣的清_對附著於 各種基板表面之顆粒的除去性極其優異。μ,由侧性 试驗結果可知,本發_清制具有適度的_性,且幾 乎不會使清潔後的基板表面的平坦性產生變化因此在清 f時無須擔d使基板表㈣得祕,即便是料固地附 著於基板表_顆粒亦㈣有效。另外亦可知,由於本發 明的清潔财降低水姉於清潔後之純表面的接觸角, 故而亦可發揮出能夠實現極其清潔之基板表面等效果。 由於本發明的清潔劑的顆粒清潔性優異,故而可較好 地用作下述電子材料用清潔劑:磁光碟基板(基礎基板 (substrate board )、磁光碟及磁頭(magnetic head )等)、 平面顯示器基板(液晶面板用基板、彩色濾光片基板(c〇1〇r filter board )、陣列基板(aiTay board )、電漿顯示器(plasma )用基板及有機電致發光(electroluminescence,EL) 顯示器用基板等)、光罩基板、梦晶圓(silic〇n wafer )、光 學透鏡(optical lens)、印刷電路板(printed circuit board)、 光通# 用镜線(cable)、發光二極體(light-emitting diode, LED)、太電池用基板及晶體振盡器(CIyStai 〇sciuat〇r ) 等。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明’任何熟習此技藝者,在不脫離本發明之精神 和範圍内’當可作些許之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 • 62 - 200923072 【圖式簡單說明】 無 【主要元件符號說明】 無Example 27 28 29 30 31 32 33 34 35 36 Preparation * Nonionic surfactant (A-1) (A-1-1) 0.2 0.1 - • 0.1 0.1 0.01 (Α-1·2) 0.2 - 0.05 • • _ (Α·1·3) • . • 0.5 • • • Anionic interface active thorn (A-2) (Α-2-1) 0.1 - 0.5 • 0.1 _ (Α·2·2) 0.1 (Α· 2·3) • 0.1 0.1 . 0.05 (Α-2-4) - - 0.1 - • 0.1 • (Α-2.5) . 0.1 . • _ (Α-2^6) - - - 0.1 0.1 0.1 • (Α· 2·7) . . 0.1 • (Α·2·8) m-xylene sulfonate chelating agent (B) citric acid 0.1 0.1 • 0,1 _ HEDP - - 0.1 0.1 • • HMP - 0.2 0.2 0.2 0.2 reducing agent (C) AA 0.5 0.5 垂 • 0.5 . 0.5 Cys 0.5 - 0.5 0.5 _ Formaldehyde _ sulfite disulfite _ phosphorous acid _ sub-disc acid · one nano - - - 0.5 - 0.5 0.5 • MDEA alkaline component ( D) DBU Argon Oxide Nano-Water Soluble Organic Solvent (G) DEG-B Other Additives (H) [pH Adjusting Shot] Amine Sulfonic Acid 1.0 - 7.0 3.5 - 0.8 • 0.5 Phosphoric acid - - • 1.5 - 0.4 _ 1.5 Water ultrapure water 98.1 99.1 99.2 922 97.4 95.1 98.7 98.4 97.6 98.7 Dilution ratio 10 10 10 10 10 10 10 10 10 10 Evaluation result pH 2.0 4.5 3.0 1.5 2.0 1.8 2.5 2.2 2.0 2.3 Value of the right part of equation (1) 473 376 434 492 473 480 453 465 473 461 Oxidation reduction potential (mV) 395 214 360 444 323 294 412 388 428 392 Surface tension (mN/m) 40 35 45 52 42 34 38 32 33 60 Cleanliness 3 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Cleanliness ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Surface flatness ~ 2 [surface roughness Ra (mn)] 0.21 0.20 0.20 0.22 0.23 0.21 0.22 0.20 0.21 0.20 Surface flatness - 3 [surface roughness Ra (nm) l 0.79 0.75 0.77 0.76 0.77 0.79 0.82 0.83 0.83 0.86 Etchability_2 [Si content (ppb) l 1400 1050 1100 1600 1350 1550 1150 1200 1400 1200 Etchability-3 [Si content (ppb) l 720 580 600 760 710 730 630 690 720 670 Contact angle - 2 〇 5.1 6.4 6.0 5. 5 4.8 6.2 5.7 5.6 5.5 6.0 Contact angle -3 (.) 8.0 7.8 7.6 8.5 8.0 8.3 7.9 7.7 8.1 7.9 Dispersibility (nm) 46 46 48 47 46 47 48 48 48 51 -58 - 200923072 [Table 6] Example adjustment S amount (parts) Evaluation result 37 38 39 40 41 42 43 44 45 46 Nonionic surfactant (A-1) (A-1-1) - 0.1 0.1 0.1 - - 0.01 0.1 0.1 0.1 (A-1 -2 - - - - - - - - - - . (A small 3) - - - - - - - - . Anionic surfactant (A-2) (A-2-1) - 0.1 0.1 0.1 0.1 0.1 - 0.1 0.1 (A-2-2) - - - - - - - . - • (A-2-3) - - - - - - - • (A-2-4) 0.1 (A-2-5) - (-) - (-) - 0.3 0.3 0.3 - 0.05 m-xylenesulfonic acid - - - - 0.3 0.3 - . 0.3 0.1 Chelating agent (B) Citric acid 0.1 . HEDP - 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 HMP • Reducing agent (C) AA 0.5 • Cys - • 0.5 formaldehyde _ . sulphite - • * - yabine acid monophosphite hypophosphite MDEA - 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 • Alkaline component (D) DBU - - 0.1 0.10 - 0.4 0.10 - - 0.2 Sodium hydroxide - 0.35 - - 0.7 - - 0.35 0.55 . Water-soluble organic solvent (G) DEG-B Other additives (H) [pH value Adjust 剤] Amine sulfonic acid 0.5 phosphoric acid - 0.4 Water ultrapure water 98.8 98.6 98.8 98.8 98.3 98.6 99.2^ 98.9 98.5 98.5 Dilution ratio 10 10 10 10 10 10 10 10 10 10 pH 2.3 12.5 10.0 8.5 12.5 10.0 8.0 12.5 12.5 2.5 Value of the right part of equation (1) 461 66 163 221 66 163 240 66 66 453 Oxidation reduction potential (mV) 390 40 106 161 39 97 158 54 58 270 Surface tension (mN/m) 65 32 33 35 48 49 58 38 35 39 Cleanliness - 3 ◎ 〇〇 ◎ 〇〇 ◎ 〇〇 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Cleanliness -6 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Surface flatness 1-2 [surface roughness Ra (nm)] 0.21 0.25 0.24 0.22 0.24 0.23 0.22 0.27 0.29 0.20 Surface flatness - 3 [surface roughness Ra(nm)] 0.84 0.64 0.60 0.53 0.61 0.56 0.77 0.67 0.78 0.60 Etchability _2 [Si Quantity (ppb)] 1200 1550 1450 1300 1500 1450 1200 1550 1550 1200 Etchability-3 [Si content (ppb)] 660 800 760 700 780 750 680 680 620 640 Contact angle - 2 〇 6.2 6.1 6.3 6.8 6.1 6.4 7.2 6.9 7.1 4.7 Contact angle - 3 〇 7.7 6.8 7.2 7.8 6.7 7.3 7.8 8.7 8.9 6.5 Dispersibility (nm) 46 34 33 35 34 34 60 55 58 32 -59- 200923072 [Table 7] Formulation amount (parts) /13⁄4 Example evaluation results 47 48 49 50 51 52 53 54 55 56 Nonionic surfactant (A-1) (A-1-1) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (A-1-2) - (A-1 -3 - - - - - - - - - . Anionic surfactant (A-2) (A-2-1) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (A-2-2) - - - - - - - - - - (A-2-3) - - - - - - - - (A-2-4) (A-2-5) - - - - - - - - - (A-2 -6) - - - - - - - - . (A-2-7) - - - - - - - - - (A-2-8) dimethyl methacrylate 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Chelating agent (B) Citric acid - • HEDP 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 HMP 0.1 0.1 Reducing agent (C) AA - • Cys - - - - - 0.5 0.5 0.5 0.5 Formaldehyde 0.5 • Sulfite 0.5 - - Disulfite - 0.5 - - - - - _ . Hydrogen phosphite - - - 0.5 - - - • . Monosodium hypophosphite - - - - 0,5 - • MDEA - - - - - 0.5 - - - - Test composition (D) DBU 0.2 0.7 0.7 0.7 0.7 0.2 0.2 - 0.2 . Hydroxide sodium 0.45 • 0.45 Water-soluble organic solvent (G) DEG-B 0.5 0.5 - - Others Additive (H) [pH adjuster] Amine sulfonic acid • Phosphoric acid 0.4 0.4 0.4 0.4 0.4 0.4 0.4 - 0.4 • Water ultrapure water 98.5 98.0 98.0 98.0 98.0 98.5 98.0 98.2 98.4 98.6 Dilution ratio 10 10 10 10 10 10 10 10 10 10 10 pH 2.5 2.5 2.5 2.5 2.5 2.5 2.5 12.5 2.5 12.0 The value of the right part of equation (1) 453 453 453 453 453 453 453 66 453 86 Oxidation reduction potential (mV) 396 409 410 403 401 427 266 35 274 43 Surface Tension (niN/m) 38 37 38 37 36 38 30 28 36 34 Cleanability - 3 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 〇 〇 〇 Cleanliness _4 ◎ ◎ ◎ ◎ ◎ 〇 ◎ ◎ ◎ ◎ Cleanliness 5 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Cleanliness 6 ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Surface flatness - 2 [surface roughness Ra (nm)] 0.20 0.21 0.21 0.22 0.22 0.22 0.19 0.20 0.20 0.21 Surface flatness - 3 [surface roughness Bri (Rain) Ra(nm)] 0.64 0.68 0.68 0.67 0:67 0.70 0.55 0.53 0.58 0.55 Etchability-2 [Si content (ppb)] 1250 1250 1250 1250 1250 1100 1200 1500 1500 1650 Etchability 3 [Si content (ppb)] 650 640 640 650 640 640 620 630 680 660 Contact angle 1 〇 5.8 6.4 6.5 6.5 6.6 6.7 4.5 6.8 4.3 6.9 Contact angle 6.8 7.0 6.9 7.0 7.1 7.4 6.0 6.1 6.4 6.2 Dispersibility (mn) 31 32 33 33 32 34 30 30 36 35 -60- 200923072 [Table 8] i (Part) Evaluation result Comparative Example 6 7 8 Nonionic surfactant (A-1) (A-1-1) 0.2 0.2 0.1 (A-1-2) - - (A-1-3) - . Anionic surfactant (A-2) (A-2-1) 0.1 • 0.1 (A-2-2) - . (A-2-3) - 0.1 . (A-2-4) - . (A -2-5) • (A-2-6) - - (A-2-7) - - - (A-2-8) - 03 m-xylenesulfonic acid - • Chelating agent (B) Citric acid 0.1 - HEDP - 0.1 HMP 0.2 • Reducing agent (C) AA - . Cys • - Formaldehyde - - Sulfite - - Sulfite - Hydrogen phosphite - monosodium hypophosphite - . - MDEA cryptic • Basic component (D) DBU - Sodium hydroxide - . 0.45 Water-soluble organic solvent (G) DEG-B - . - Other additives (H) [pH value Conditioner] Amine sulfonic acid - 1.0 • Phosphoric acid ink - Water ultrapure water 99.6 98.5 99.0 Dilution ratio 10 10 10 pH 5.5 2.0 12.3 The value of the right part of the equation (1) 337 473 74 Oxidation reduction potential (mV) 394 565 167 Surface tension (mN/m) 40 40 42 Cleanability - 3 Δ 〇 X Cleanability _4 〇 X 〇 Cleanability - 5 △ X Δ Cleanability _6 XX 〇 Surface flatness - 2 [Surface roughness Ra (mn )] 0.20 0.28 0.34 Surface flatness - 3 [surface roughness Ra (ran)] 1.12 1.34 1.05 Etchability _2 [Si content (ppb)] 500 800 300 Etchability - 3 [Si content (ppb)] 350 650 550 Contact angle ·2〇10.2 8.5 15.6 Contact angle 〇3〇18.6 13.2 9.4 Dispersibility (nm) 422 1007 576 •61- 200923072 Recording the μ~ the results of the long-term recording, the cleaning of this (4) is attached to the surface of various substrates. The repellency of the particles is extremely excellent. μ, from the results of the lateral test, it can be seen that the present invention has a moderate degree of smear, and hardly changes the flatness of the surface of the substrate after cleaning, so that it is not necessary to make the substrate table (4) secret when clearing f Even if it is firmly attached to the substrate table _ particles (4) is effective. Further, it is also known that since the cleaning property of the present invention lowers the contact angle of the water on the pure surface after cleaning, it is also possible to exhibit an effect of achieving an extremely clean substrate surface. Since the cleaning agent of the present invention is excellent in particle cleanability, it can be preferably used as a cleaning agent for electronic materials: a magneto-optical substrate (substrate board, magneto-optical disk, magnetic head, etc.), plane Display substrate (liquid crystal panel substrate, color filter substrate (c〇1〇r filter board), array substrate (aiTay board), plasma display (plasma) substrate, and organic electroluminescence (EL) display Substrate, etc., reticle substrate, silic 〇n wafer, optical lens, printed circuit board, luminaire #cable, light emitting diode -emitting diode, LED), substrate for battery, and crystal oscillator (CIyStai 〇sciuat〇r). While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. • 62 - 200923072 [Simple description of the diagram] None [Key component symbol description] None

Claims (1)

200923072 十、申請專利範圍·· 1·一種電子材料用清潔劑,其含有界面活性劑(A), 該清潔劑的特徵在於:於用作清潔液時的有效成分濃度 下、25°C下的PH值及氧化還原電位(V)滿足下述數式 〇),其中氧化還原電位(V)的單位為mv,vsSHE : VS-38.7χρΗ 值 + 550 ( 1)。 2. 如申請專利範圍第1項所述之電子材料用清潔劑, 其中該清潔劑於用作清潔液時的有效成分濃度下、25&lt;^下 的pH值為1〜13 ’上述電子材料為磁光碟用玻璃基板、平 面顯示器基板或光罩基板。 3. 如申請專利範圍第!項所述之電子材料用清潔劑, 其中該清潔劑於用作清潔液時的有效成分濃度下、25。〇下 的pH值為5〜13,上述電子材料為磁光碟用銘基板。 4. 如申請專利範圍第i項至第3項中任_項所述之電 子材料用清糊,翻作清絲_有效成分濃度為0.01 wt%〜15 wt%。 5. 如申請專利範圍第4項所述之電子材湘清潔劑, 其中上述界面活性劑(A)為陰離子性界面活性劑(Α·2) 或者陰離子性界面活_ (Α_2)與轉子性界面活性齊 (Α-1)的混合物。 6. 如申請專利範_ 2項或 清潔劑’更含有選自以螯合_)、還; 成分(D)所組成的族群中的-種或-種以上。 7. 如申請專利範圍第6項所述之電子材料用清潔劑, 200923072 其中上述螯合劑(B)是選自 ==·6)、縮合魏(二及縮糾以 之鹽所組成的族群中的-種或-種以上螯合劑。 ) ,之電子材料用清潔劑, 數為Η的還原二:巧為1〜12的_、碳 、爭拓mu 頰反數為1〜30的脂肪族胺、硫醇系 種tit碟的含氧酸_^ 子材㈣清紐,其含有界面活性劑(A), 特徵在於··有效成分濃度為0.01 wt%〜l5 ^1〇) ^ v&lt;r〜,r电位C V)的早位為mV,vsSHE : = -38.7χρΗ 值+ 550 “)。 液,㈣9項所述之電子材料用清潔 璃基板平= 二述板電子材料為磁光碟- 其二:述之電子材料用清潔液, 板。 為5〜13 ’上述電子㈣為磁光碟用紹基 第制村方法,其是在如申請專利範圍 清潔。 項中任一項所述之清潔液中對電子材料進行 申請專利範圍第12項所述之電子材料 J以研削步驟後的清潔步驟、研磨步驟後的清=步 -65 - 200923072 驟或紋理化步驟後的清潔步驟巾的任—清料驟來對磁光 碟基板平面顯示器基板或光罩基板進行清潔。 14.如申凊專利範圍第13項所述之電子材料的清潔方 法,其中上述研磨步驟是使用氧化鋁、矽酸膠、氧化鈽或 鑽石中的任一種作為研磨劑的研磨步驟及/或紋理化步驟。 、I5.如申請專利範圍第12項所述之電子材料的清潔方 法’其中使料自以超聲波清潔、喷淋清潔、喷霧清潔、 毛刷清潔、浸漬清潔、浸潰錢清歧刻錢潔所組成 的族群中的至少一種清潔方式來進行清潔。 16. 如申請專利範圍第12項所述之電子材料的清潔方 法其中水相對於清潔後之基板的接觸角在25°C下小於算 於20。。 牙 17. —種電子材料的製造方法,其包含以如申請專利範 圍第12項所述之清潔方法來清潔電子材料的步驟。 -66 - 200923072 七、 指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: 無 八、 本案若有化學式時,請揭示最能顯示發明特徵 的化學式: 無200923072 X. Patent Application Scope 1. A cleaning agent for electronic materials, which contains a surfactant (A), which is characterized by an active ingredient concentration at 25 ° C when used as a cleaning liquid. The pH value and the oxidation-reduction potential (V) satisfy the following formula 〇), in which the unit of the oxidation-reduction potential (V) is mv, and vsSHE: VS-38.7 χρΗ value + 550 (1). 2. The cleaning agent for electronic materials according to claim 1, wherein the cleaning agent has a pH of 1 to 13 at a concentration of an active ingredient when used as a cleaning liquid, and the electronic material is A glass substrate for a magneto-optical disk, a flat display substrate, or a photomask substrate. 3. If you apply for a patent scope! The cleaning agent for an electronic material according to the item, wherein the cleaning agent is used as an active ingredient concentration when used as a cleaning liquid, 25. The pH of the underarm is 5 to 13, and the above electronic material is a substrate for magneto-optical discs. 4. If the electronic material described in any of items _ to 3 of the patent application range is used as a clear paste, it is turned into a clear wire _ the active ingredient concentration is 0.01 wt% to 15 wt%. 5. The electronic material cleaning agent according to claim 4, wherein the surfactant (A) is an anionic surfactant (Α·2) or an anionic interface _(Α_2) and a rotor interface A mixture of active Qi (Α-1). 6. The application of the patent _ 2 or the detergent ‘ further contains a species selected from the group consisting of chelating _) and further; component (D). 7. The cleaning agent for electronic materials according to item 6 of the patent application, 200923072 wherein the above chelating agent (B) is selected from the group consisting of ==·6), condensed Wei (two and the salt - or more than one kind of chelating agent.), the cleaning agent for electronic materials, the number of bismuth reduction two: skillfully 1~12 _, carbon, contiguous mu, buccal inverse number of 1 to 30 aliphatic amine The oxyacid of the thiol-based tit dish _^ sub-material (4), which contains a surfactant (A), characterized in that the concentration of the active ingredient is 0.01 wt%~l5 ^1〇) ^ v&lt;r~ , r potential CV) early position is mV, vsSHE: = -38.7χρΗ value + 550 ") liquid, (d) 9 items of the electronic material with the clean glass substrate flat = two said board electronic material is a magneto-optical disc - second: The cleaning liquid for the electronic material, the plate is 5~13' The above-mentioned electronic (4) is a method for the magneto-disc using the Shaoji Di Village, which is cleaned in the cleaning liquid as described in any one of the items. The electronic material is subjected to the cleaning step after the grinding step and the cleaning step after the grinding step in the electronic material J described in claim 12 -65 - 200923072 The cleaning step of the cleaning step after the step of the texturing process is to clean the magneto-optical substrate flat display substrate or the reticle substrate. 14. The electronic material as described in claim 13 The cleaning method, wherein the grinding step is a grinding step and/or a texturing step using an alumina, a phthalic acid gel, a cerium oxide or a diamond as an abrasive. I. As described in claim 12 The cleaning method of the electronic material, wherein the material is subjected to at least one cleaning method of a group consisting of ultrasonic cleaning, spray cleaning, spray cleaning, brush cleaning, immersion cleaning, and dip-cleaning. 16. The cleaning method of the electronic material according to claim 12, wherein the contact angle of the water with respect to the cleaned substrate is less than 20 at 25 ° C. The tooth 17 - manufacture of an electronic material A method comprising the steps of cleaning an electronic material by a cleaning method as described in claim 12. -66 - 200923072 VII. Designation of representative drawings: (1) Designation of the case Table Pictured: None (b) of FIG element symbols representative of this briefly described: No eight, when the case if the formula, please reveal the best features of the invention show a chemical formula: None
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