TW200901531A - Process for making contained layers - Google Patents
Process for making contained layers Download PDFInfo
- Publication number
- TW200901531A TW200901531A TW097118317A TW97118317A TW200901531A TW 200901531 A TW200901531 A TW 200901531A TW 097118317 A TW097118317 A TW 097118317A TW 97118317 A TW97118317 A TW 97118317A TW 200901531 A TW200901531 A TW 200901531A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- organic
- radiation
- rsa
- surface energy
- Prior art date
Links
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- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ORSDQUOMVWYHAE-UHFFFAOYSA-M cesium;prop-2-enoate Chemical compound [Cs+].[O-]C(=O)C=C ORSDQUOMVWYHAE-UHFFFAOYSA-M 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
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- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
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- 238000007646 gravure printing Methods 0.000 description 1
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- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- DOACSXJVHDTDSG-UHFFFAOYSA-N henicosan-11-one Chemical compound CCCCCCCCCCC(=O)CCCCCCCCCC DOACSXJVHDTDSG-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate Chemical compound [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 1
- CBHCDHNUZWWAPP-UHFFFAOYSA-N pecazine Chemical compound C1N(C)CCCC1CN1C2=CC=CC=C2SC2=CC=CC=C21 CBHCDHNUZWWAPP-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
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- 238000007670 refining Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000932 sedative agent Substances 0.000 description 1
- 230000001624 sedative effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- BHBIPLOIWQSVID-UHFFFAOYSA-N thiohypofluorous acid Chemical compound SF BHBIPLOIWQSVID-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93879407P | 2007-05-18 | 2007-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200901531A true TW200901531A (en) | 2009-01-01 |
Family
ID=39825546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097118317A TW200901531A (en) | 2007-05-18 | 2008-05-16 | Process for making contained layers |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080286487A1 (enExample) |
| EP (1) | EP2147129A1 (enExample) |
| JP (1) | JP5457337B2 (enExample) |
| KR (1) | KR101516447B1 (enExample) |
| CN (1) | CN101688287B (enExample) |
| TW (1) | TW200901531A (enExample) |
| WO (1) | WO2008144467A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090142556A1 (en) * | 2007-11-29 | 2009-06-04 | E. I. Du Pont De Nemours And Company | Process for forming an organic electronic device including an organic device layer |
| US8040048B2 (en) * | 2007-12-12 | 2011-10-18 | Lang Charles D | Process for forming an organic electronic device including an organic device layer |
| US8497495B2 (en) | 2009-04-03 | 2013-07-30 | E I Du Pont De Nemours And Company | Electroactive materials |
| TW201104357A (en) * | 2009-07-27 | 2011-02-01 | Du Pont | Process and materials for making contained layers and devices made with same |
| KR101621636B1 (ko) * | 2011-12-20 | 2016-05-16 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 격납된 층을 제조하기 위한 방법 및 물질, 및 이를 사용하여 제조된 소자 |
| KR20140033671A (ko) * | 2012-09-10 | 2014-03-19 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조 방법 |
| KR102019465B1 (ko) * | 2012-12-13 | 2019-09-06 | 주식회사 엘지화학 | 적층된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303238B1 (en) * | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
| KR20010085420A (ko) * | 2000-02-23 | 2001-09-07 | 기타지마 요시토시 | 전계발광소자와 그 제조방법 |
| TW472503B (en) * | 2000-04-26 | 2002-01-11 | Ritdisplay Corp | Manufacture method of photosensitive polyimide pattern definition layer for organic light-emitting diodes display |
| US6670645B2 (en) * | 2000-06-30 | 2003-12-30 | E. I. Du Pont De Nemours And Company | Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds |
| EP1374641B1 (en) * | 2001-03-02 | 2017-12-27 | The Trustees Of Princeton University | Double doped-layer, phosphorescent organic light emitting devices |
| JP2003058077A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| JP2003123967A (ja) * | 2001-10-10 | 2003-04-25 | Matsushita Electric Ind Co Ltd | 発光素子の製造方法 |
| JP4231645B2 (ja) * | 2001-12-12 | 2009-03-04 | 大日本印刷株式会社 | パターン形成体の製造方法 |
| JP2004047176A (ja) * | 2002-07-09 | 2004-02-12 | Sharp Corp | 有機エレクトロルミネッセンス素子 |
| KR100858802B1 (ko) * | 2002-07-31 | 2008-09-17 | 삼성에스디아이 주식회사 | 전자 발광 소자의 제조방법 |
| JP4165692B2 (ja) * | 2002-08-05 | 2008-10-15 | 大日本印刷株式会社 | エレクトロルミネッセント素子の製造方法 |
| US7098060B2 (en) * | 2002-09-06 | 2006-08-29 | E.I. Du Pont De Nemours And Company | Methods for producing full-color organic electroluminescent devices |
| CN1681869B (zh) * | 2002-09-24 | 2010-05-26 | E.I.内穆尔杜邦公司 | 用于电子器件用聚合物酸胶体制成的可水分散的聚苯胺 |
| WO2004029128A2 (en) * | 2002-09-24 | 2004-04-08 | E.I. Du Pont De Nemours And Company | Water dispersible polythiophenes made with polymeric acid colloids |
| US6982179B2 (en) * | 2002-11-15 | 2006-01-03 | University Display Corporation | Structure and method of fabricating organic devices |
| JP2004355949A (ja) * | 2003-05-29 | 2004-12-16 | Tdk Corp | 有機ｅｌ表示体の製造方法および有機ｅｌ製造装置 |
| CN1574214A (zh) * | 2003-06-03 | 2005-02-02 | 国际商业机器公司 | 用于制造电子器件的基于熔化的图案化工艺 |
| JPWO2006070713A1 (ja) * | 2004-12-28 | 2008-06-12 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
| US20080309221A1 (en) * | 2004-12-30 | 2008-12-18 | E.I. Du Pont De Nemours And Company | Containment Structure For an Electronic Device |
| JP2008527693A (ja) * | 2004-12-30 | 2008-07-24 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 閉じ込め構造および方法 |
| WO2006117914A1 (ja) * | 2005-04-27 | 2006-11-09 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子の製造方法 |
| US20060275547A1 (en) * | 2005-06-01 | 2006-12-07 | Lee Chung J | Vapor Phase Deposition System and Method |
| US20070020395A1 (en) * | 2005-06-27 | 2007-01-25 | Lang Charles D | Process for making an electronic device |
| US8124172B2 (en) * | 2006-03-02 | 2012-02-28 | E.I. Du Pont De Nemours And Company | Process for making contained layers and devices made with same |
| WO2007145978A1 (en) * | 2006-06-05 | 2007-12-21 | E. I. Du Pont De Nemours And Company | Process for making contained layers and devices made with same |
| KR20100094475A (ko) * | 2007-10-26 | 2010-08-26 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자 |
| US20090130296A1 (en) * | 2007-11-15 | 2009-05-21 | Universal Display Corporation | Fabrication of Organic Electronic Devices by Ink-Jet Printing at Low Temperatures |
| KR20110014653A (ko) * | 2008-05-19 | 2011-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전자 소자에서 증기 코팅 장치 및 방법 |
-
2008
- 2008-05-15 US US12/121,234 patent/US20080286487A1/en not_active Abandoned
- 2008-05-16 JP JP2010509465A patent/JP5457337B2/ja not_active Expired - Fee Related
- 2008-05-16 EP EP08755637A patent/EP2147129A1/en not_active Withdrawn
- 2008-05-16 KR KR1020097026307A patent/KR101516447B1/ko not_active Expired - Fee Related
- 2008-05-16 CN CN200880016194.7A patent/CN101688287B/zh not_active Expired - Fee Related
- 2008-05-16 WO PCT/US2008/063825 patent/WO2008144467A1/en not_active Ceased
- 2008-05-16 TW TW097118317A patent/TW200901531A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100018570A (ko) | 2010-02-17 |
| US20080286487A1 (en) | 2008-11-20 |
| EP2147129A1 (en) | 2010-01-27 |
| JP2010528427A (ja) | 2010-08-19 |
| CN101688287A (zh) | 2010-03-31 |
| JP5457337B2 (ja) | 2014-04-02 |
| KR101516447B1 (ko) | 2015-05-04 |
| WO2008144467A1 (en) | 2008-11-27 |
| CN101688287B (zh) | 2015-03-18 |
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