TW200849455A - Apparatus and method for processing substrate - Google Patents

Apparatus and method for processing substrate Download PDF

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Publication number
TW200849455A
TW200849455A TW097100472A TW97100472A TW200849455A TW 200849455 A TW200849455 A TW 200849455A TW 097100472 A TW097100472 A TW 097100472A TW 97100472 A TW97100472 A TW 97100472A TW 200849455 A TW200849455 A TW 200849455A
Authority
TW
Taiwan
Prior art keywords
conductive layer
substrate
film
substrate processing
gas
Prior art date
Application number
TW097100472A
Other languages
English (en)
Chinese (zh)
Other versions
TWI353649B (enExample
Inventor
Takuya Sugawara
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200849455A publication Critical patent/TW200849455A/zh
Application granted granted Critical
Publication of TWI353649B publication Critical patent/TWI353649B/zh

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Classifications

    • H10P72/0436—
    • H10P14/40—
    • H10P72/0402—
    • H10P95/90—

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW097100472A 2007-01-17 2008-01-04 Apparatus and method for processing substrate TW200849455A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
TW200849455A true TW200849455A (en) 2008-12-16
TWI353649B TWI353649B (enExample) 2011-12-01

Family

ID=39704110

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097100472A TW200849455A (en) 2007-01-17 2008-01-04 Apparatus and method for processing substrate

Country Status (4)

Country Link
JP (1) JP4361568B2 (enExample)
KR (1) KR100967923B1 (enExample)
CN (1) CN101226877B (enExample)
TW (1) TW200849455A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988667B1 (ko) 2009-01-23 2010-10-18 장석호 발전 효율과 회전력 향상이 이루어진 발전장치
KR101113013B1 (ko) * 2010-02-23 2012-03-21 테오스 가부시키가이샤 Ｃｖｄ 처리 방법 및 그 방법을 사용하는 ｃｖｄ 장치
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN107217240A (zh) * 2017-07-11 2017-09-29 江苏星特亮科技有限公司 一种石墨烯薄膜的制备方法
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP4433858B2 (ja) * 2004-03-31 2010-03-17 パナソニック電工株式会社 電子源装置

Also Published As

Publication number Publication date
CN101226877A (zh) 2008-07-23
KR20080067965A (ko) 2008-07-22
JP4361568B2 (ja) 2009-11-11
CN101226877B (zh) 2010-12-01
KR100967923B1 (ko) 2010-07-06
TWI353649B (enExample) 2011-12-01
JP2008177289A (ja) 2008-07-31

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