TW200847306A - Dimple free gold bump for drive IC - Google Patents

Dimple free gold bump for drive IC Download PDF

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Publication number
TW200847306A
TW200847306A TW096123192A TW96123192A TW200847306A TW 200847306 A TW200847306 A TW 200847306A TW 096123192 A TW096123192 A TW 096123192A TW 96123192 A TW96123192 A TW 96123192A TW 200847306 A TW200847306 A TW 200847306A
Authority
TW
Taiwan
Prior art keywords
layer
conductive
openings
conductive bump
passive layer
Prior art date
Application number
TW096123192A
Other languages
English (en)
Inventor
Heikyung Min
Original Assignee
Nat Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Semiconductor Corp filed Critical Nat Semiconductor Corp
Publication of TW200847306A publication Critical patent/TW200847306A/zh

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

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200847306 九、發明說明： 且尤其是有關使用於例如 【發明所屬之技術領域】 本發明係有關於積體電路， 驅動積體電路中之接點設計。 【先前技術】 邊如蜂巢式電話之許多手持式裝置係包含顯示器，該 顯不器回應於接收自包含於該裂置之電子裝置中之驅動積 體電路（1C)的信號以提供影像。典型地，驅動Ic係透過接 點凸塊”之陣列而電性連接至形成於玻璃顯示面板之背 面的導電性錫球，該等凸塊係形成為驅動IC肖構之一部 分且連接至驅動電路之導電性互連結構。 第 圖頌示廣泛使用於驅動1C中之導電性凸塊設計 的才K截面圖。該設計包含金（Au)凸塊100，該Au凸塊100 係形成與例如結（A1)之導電性塾1〇2電性接觸，該墊1〇2 係例如疋驅動IC之相關聯的積體電路結構的互連結 構之部分m下方被㈣1G6中之開σ將使得該Au 凸塊1〇〇與Ai墊102之間能夠電性連接，被動層ι〇6典 ，地包含形成於氧化梦層之上的氮化％層。該被動層中的 寬廣區域之開口係使得相當低之阻抗的電流能夠流動於Au 凸塊100與A1墊102之間。 然而’在該被動層1 06中之寬的開口之形成會在A1塾 1〇2的週邊的周圍導致有“階梯，，結構1〇6&。在Au凸塊 的形成期間，在被動層106中之此階梯將造成對應的階梯 100a被形成於Au凸塊10〇之週邊的周圍，因此將界定一 200847306 凹入之“凹狀”表面區域丨00b於金凸塊1 〇〇的内側部分。 如第1A圖之實例中所示地，針對被動層1〇6之J 4微米的 階梯高度及針對15微米之金凸塊高度而言，該金凸塊100 的凹狀表面100b可自包圍的週邊階梯1〇〇a凹入14微米 的深度。 上述Au凸塊的凹狀100b可能對相關聯的IC產生效 能的問題。熟習於本項技藝之該等人士將理解的是，ic將 典型地包含許多跨越IC之佈局分佈的間隔分離的Au凸 塊。在第IB目中所示之理想的情況中，所有該等多個 凸塊100將對齊以在該等多個凸力】〇〇之各個凸塊與相關 聯之顯示電路的對應導電性錫球110之間建立電性接觸。 然而，如第ic圖中所示地，可能由IC製程所產生之失準 可能會造成該f Au凸塊⑽之—些凸塊對齊，以致使凸 塊1〇〇的週邊階梯100a與對應的錫球u〇(acf，各向異性 導電膜)接觸’而例如在第1C圖中之凸@ ιΐ2的其他心 凸塊則是使得凸塊112的凹狀表面與其對應之锡球"Ο對U 齊。此可能於Au凸塊"2的凹狀表面與錫球"〇之門生 成間隙，而產纟“開路，，電路。因此，在對顯示面板：； Γ:巢3接中，只要一個該間隙發生就會造成該裝置(例 如蜂巢式電活）的完全故障。 第2A及2B圖描繪解決上述失準問題的已 方式使用形成於被動層中之小的方形加的陣列⑽Μ 圖小：” 204的陣列(第2Β圖)於導電性接點墊206 之 如弟1圖中所示之使用被動層之中的—個寬區 200847306 域之開口。㈣2C圖中所示地，因為在被動層200中之 該等開Π之各個開π的大小係相當地小（例如，3微米x” 米，而於開口之間具有最小1()微乎 做木間隔），在開口上之Au 凸塊208的形成將造成凸塊2〇 υδ之相當平坦的上方表面 208a，而仍透過該等開口而提供 义丨，、电〖生接觸於Au凸塊208 與接點墊206之間。該Au凸塊2〇 口龙2ϋ8之此平坦的上方表面 208a將解決上述失準問題。 與此方式相關連的問題在於，因為電流之流動係與導 體的橫截面面積成比例，所以由帛2c圖設計所提供之縮 減的面和會產生更咼阻抗的電流路徑於該Μ凸塊2〇8與 接點墊206之間。 ”因此’將企望的是’能夠具有可用的Au &塊設計而 解決上述之失準問題，且能維持足狗的電流流動於該Μ 凸塊與相關聯的1C之間。 【發明内容】
言本I月提供一種用於例如驅動IC之積體電路結構 的導電性凸塊結構。該凸塊結構包含形成》1C之各個導 14接點墊（例如，鋁）之上的諸如氧化矽/氮化矽堆疊之被 動層。複數個開口穿過被動層而形成於各個墊之上，以暴 七专 ?之上方表面的區域。該等開口在縱向尺寸上係比橫 °寸更大。針對各個墊，較佳地，包含金（Au)之導電性 $塊係形成於被動層之上，而延伸穿過被動層中之該等開 /、u亥塾之所暴露的上方表面區域電性接觸。 栝據本發明，在該被動層中之該等開口係足夠大，而 7 200847306 提供使得足夠電流能夠流過各個鋁接點墊與其相關聯的金 凸塊之間的總橫截面面積，而又足夠小以助於具有相當平 坦之上方表面區域的金凸塊之製造，藉以消除與“凹狀” 凸塊相關聯之失準問題。 當考慮到其中陳述使用本發明觀念之描繪性實施例的 本發明咩細說明及附圖時，將更完整地明瞭及理解本發明 之各式各樣觀點的特性及優點。
【實施方式】 本發明提供一種使用於積體電路結構中之導電性凸塊 結構。該凸塊結構可消除先前所遭遇之與附接lc至另一 導電性結構相關聯的失準問題，1同時允許充分的電流流 :該凸塊結構。例如，们C可為使用來驅動諸如蜂巢式 電話之手持式裝置的顯示器之類型的驅動IC。其他的導電 性結構可為例如手持式裝置之顯示面板電子裝置。孰習於 本項技藝之料人士將理解的是，本發明之觀念並未受限 於此特定之產品應用。 很像本發明之導電性凸土舍么士 守私沒凸塊結構包含形成於1C結構之各 個導電性接點墊之上的被動 J饭勁層歿數個開口延伸貫穿該被 勤層而暴露接點墊之上方矣而从r t 面的區域。如下文所更詳細描 A地’開口在縱向方向上 比在松向方向上更大。針對各個 接點墊，導電性凸塊係形成於 ^ ^ 、皮動層之上，而延伸穿過被 勁曰中之该專開口，且與接點 電性接觸。 之所暴路的上方表面區域 如上所述 本發明之主要觀點 係形成於導電性凸塊與 8 200847306 下方接點墊間之被動層中之開口的幾何形狀。第3 A、3B 及3C圖顯示被動層300中之該等開口的代表性實施例。 第3A圖顯示以三列而每列兩個矩形開口 3〇2所設置之矩 形開口的陣列。第3B圖顯示具有各個矩形開口 3〇4形成 為實質地延伸下方接點墊之全長的三個矩形開口 3〇4之序 列。第3C圖顯示以每列三個橢圓形開口 3〇6之三列所設 置的橢圓形開π 306之陣列。在第3A、把及3c圖中所示 之α κ %例+ ’ 4等口具有比橫向尺寸y更大的縱向尺 寸X。 上述地在金結構中之電流流動係與被動層中之開 口的面積成比例。例如，針對80微米（μη1)χ31微米（㈣的 接砧墊第1Α圖之接點墊開口為522平方微米，但具有 上述之凹狀問題。針對相同的墊大小而言，第2B圖之方 式使用六個3微米km)直徑之圓形來提供42·4平方微米的 、、么、動g開口。根據本發明之技術，針對相同的接點塾大 小而言，被動層開口的總面積可直至348平方微米。 第3D圖顯不根據本發明之導電性凸塊結構的橫截面， 在此h況中係沿著第3B圖中之線3D 一 所取的橫截面。 …弟3 D圖之結構包含形成於例如用於手持式裝置 之顯不器的驅動1C之相關聯積體電路結構310的導電性 接J墊308上之被動層3〇〇。較佳地，該導電性接點墊係 由鋁或鋁合金所形成，雖然熟習於本項技藝之該等人士將 ”、疋了使用其他的導電性材料。較佳地，被動層3 0 0 /成於‘私性接點墊3〇8之上的氧化矽層，及形成於 200847306 該乳化石夕層之上的氮化石夕層。上述該等開口係形成於被動 層300之中，以暴露導電性接點墊_之表面區域魏。 熟習於本項技藝之該等人士將理解的是，料開口可使用 習知1C處理技術而姓刻貫穿該被動層。如上述，該等開 口具有比橫向尺寸更大的縱向尺寸。較佳是金(Au)之導電 性凸塊係形成（由熟習於本項技藝之該等人士所熟知的習知 技術）於被動層300之上，而延伸穿過被動層300中之該等 開口 ’且與接點墊308之所暴露的表面區域3〇^電性接觸。 雖Γ,心係用於凸力312之較佳材料，但熟習於本項技藝 之該等人士將理解的是，亦可使用其他材料於此目的。 總括地，本發明提供一種導電性凸塊結構，可解決由 下方被動層階梯所造成t “凹狀”問題，而維持該凸塊與 ic接點墊間之所需的接觸面積。 將瞭解的疋，上述本發明之特定實施例 提供，且對熟習於本項技蓺之兮算人+而一 而 又5亥4人士而吕，其他的修正
例可產生而不會背離如附錄申請專利範圍及其等效範圍所 表不之本發明的範疇和精神。 【圖式簡單說明】 第1Α圖係部分橫截面圖，其描繪已知之金(心)凸塊 結構； 第圖係部分橫截面圖，其描繪第1A圖中所示類型 之Au凸塊陣列與相關聯之導電性結構的對應錫球陣列之 間理想的對齊； 弟ic圖係部分橫截面圖，其描繪第ia圖中所示類型 10 200847306 之Αιι凸塊陣列與相關聯之導電性結構的對應錫球陣列之 間的失準； 第2A圖係俯視圖，其描緣對使用形成於被動層中之 方形的陣列之Au凸塊形成的已知方式； 第2B圖係俯視圖，其描繪對使用形成於被動層中之 圓形的陣列之Au凸塊形成的方式； 第2C圖係部分橫截面圖，其描繪由第2A或2b圖之 方式所產生之Au凸塊結構； 第3A圖係俯視圖，其描繪使用矩形開口陣列於被動 層中而製造根據本發明之Au凸塊結構的方法； 第3B圖係俯視圖，其描繪使 斤列之全長度開口 於被動層中而製造根據本發明之Au凸塊結構的方法· 第3C圖係俯視圖，其描繪使用橢圓形開口陣列於被 動層中而製造根據本發明之Au凸塊結構的方法.、 第3D圖係部分的橫截面圖，其描 ⑽制、皮ΛΑ A 很據本發明觀點 所衣k的Au凸塊結構。 【主要元件符號說明】 3〇〇 被動層 308 導電性接點墊 308a 所暴露之表面區域 31〇 積體電路結構 312 導電性凸塊 100,208 金（Au)凸塊 102 導電性接點墊 200847306 104 積體電路結構 106,200 被動層 100a 階梯 100b 凹狀表面 110 錫球 112 凸塊 208a 平坦的上方表面 206 接點墊 202 方形 204 圓形 12

Claims (1)

  1. 200847306 十、申請專利範固： .-種導電性凸塊結構，其係形成為一積 之部分，該積體電路紝—勹 、包路、、告構 ㈣冤路結構包含至少一導電性 凸塊結構係包含： & 違¥電性 一被動層，其係形成於該導電性墊之一上方 該被動層包含複數個貫穿其而形成的開 ：：上， 性塾之該上方表面的區域，料開口之各個開=導電 向=及垂直於該縱向尺寸之—橫向尺寸，該縱 比β玄検向尺寸更大；以及 、係 一導電性凸塊，其係形成於該被動層之— U 丄*乃衣面之 二，電性凸塊延伸穿過該被動層中之該等開口，且鱼 α亥接點墊之所暴露的上方表面區域電性接觸。 、、♦ 2·如申請專利範圍帛1項之導電性凸塊結構，其中該 黾性凸塊包含金（Au)。 3·如申請專利範圍第j 被動層包含一氧化矽層及一 於该接點墊之該上方表面之 該氧化矽層之上。 項之導電性凸塊結構，其中該 氮化矽層，該氧化矽層係形成 上，以及該氮化矽層係形成於 4·如申請專利範圍第1項之導電性凸塊結構，其中該 接點墊包含鋁（A1)。 5·如申請專利範圍第1項之導電性凸塊結構，其中該 等開口係矩形。 6.如申請專利範圍第1項之導電性凸塊結構，其中該 等開口係橢圓形。 13 200847306 7.-種形成用於-積體電路結構之導電性凸塊結構的 方法，該積體電路結構包含至少一導電性墊，該方法包含： 形成-被動層於該導電性塾之一上方表面之上，該被 動層包含複數個貫穿其而形成的開口，以暴露該導電性塾 之a亥上方表面的區域，該莖问门―々/ 邊寺開口之各個開口具有一縱向尺 寸及垂直於該縱向尺寸之一樯， 知、向尺寸，該縱向尺寸係比該 橫向尺寸更大；以及 形成-導電性凸塊於該被動層之—上方表面之上，使 得該導電性凸塊延伸穿過該被動層中之該等開口，且與該 接點墊之所暴露的上方表面區域電性接觸。 8·如申請專利範圍第7項之t i # 包含金（Au)。 貞之方法’其中該導電性凸塊 9·如申請專利範圍第7 之步驟包含： 方法，其中形成該被動層 形成一氧化矽層於該接點塾之該上方表面之上； 形成一氮化矽層於該氧化矽層之上；以及 ， 幵> 成穿過該氮化石夕層及該氧 ln , ^ 〆氧化矽層的該等開口。 •如申請專利範圍第7項之方 I呂（A1)。 〆 中呑亥接點墊包含 π ·如申請專利範圍第7 形。 万去，其中該等開口係矩 12.如申請專利範圍第7 圓形。 万法’其中該等開口係橢 14
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