TW200842957A - Dicing/die bonding tape and method for manufacturing semiconductor chip - Google Patents

Abstract

This invention provides a dicing/die bonding tape which, in dicing of a semiconductor wafer followed by pick-up of a semiconductor chip together with a die bonding film, can realize easy separation and taking-out of the semiconductor chip together with the die bonding film. The dicing/die bonding tape is a dicing/die bonding tape (1) for use in a process, in which a semiconductor wafer is diced to provide a semiconductor chip which is then die bonded. The dicing/die bonding tape (1) comprises a die bonding film (3) and a nonpressure-sensitive adhesive film (4) applied onto one side of the die bonding film (3). The nonpressure-sensitive adhesive film (4) comprises a crosslinked product of an (meth)acrylic resin as a main component.

Description

200842957 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a dicing/bonding ribbon used in the manufacture of a semiconductor wafer, and more particularly, the present invention relates to bonding to a semiconductor wafer. And a dicing/bonding ribbon used in dicing and die bonding, and a method of manufacturing a semiconductor wafer using the dicing/bonding ribbon. ^ [Prior Art] From the prior art, in order to cut a semiconductor wafer from a semiconductor wafer, mount a semiconductor wafer on a substrate, or the like, a dicing/dotted ribbon is used. As an example of the above-mentioned dicing/adhesive tape, the following Patent Document 1 discloses a dicing/bonding ribbon in which a radiation-curable adhesive layer is laminated on one surface of a film-like adhesive layer. The film adhesive layer contains a thermoplastic resin and an epoxy resin. The film adhesive layer corresponds to a die film. χ, the radiation-curable adhesive layer is a radiation-hardened dicing film. When a semiconductor wafer is manufactured by using the dicing/adhesive tape disclosed in Patent Document 1, first, the semiconductor wafer is bonded to the opposite side of the surface of the die-bonded film having the dicing film. Then, along with the die-cut film, the semiconductor crystal is cut. After the dicing is performed, the radiation-hardened dicing film is irradiated with radiation to harden the dicing film. After the crystal film is hardened, its adhesion will decrease. Then, the die-bonded film 'attached to the semiconductor wafer' was peeled off and taken out'. Further, the semiconductor wafer is mounted on the substrate via the die-bonding film. However, in the case of dicing, in order to perform dicing, the die film must be firmly bonded to the dicing film. In contrast to the case where the semi-conductive gastric wafer is picked up after the dicing, the adhesive film with the semiconductor wafer must be peeled off from the dicing film as appropriate 128480.doc 200842957. For this reason, Patent Document 1 uses a radiation-hardening type dicing film which has a high adhesive force before irradiation with radiation and which is hardened after irradiation of radiation to lower the adhesive force. On the other hand, a dicing/bonding ribbon having a dicing film which is not a radiation-hardened dicing film is also known. For example, Patent Document 2 listed below discloses a dicing/bonding ribbon having a base film (II) laminated on a single layer of a film-like adhesive layer. The film-like adhesive layer is composed of a resin composition containing a thermoplastic resin such as polyimide or acrylic polymer and a thermosetting resin. The film adhesive layer corresponds to a die film. As the dicing film, a polypropylene film, a polyethylene film or a polyethylene terephthalate film is used. The base film (II) corresponds to a dicing film. In Patent Document 2, after the dicing is performed, the surface on which the dicing film is attached to the die film is subjected to a release treatment so that the die attach film with the semiconductor wafer can be appropriately peeled off from the dicing film. Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-292821 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei. No. 2006-165074. SUMMARY OF THE INVENTION In the dicing/adhesive tape disclosed in Patent Document 1, irradiation is used. After radiation, a radiation-hardened dicing film which hardens to reduce the adhesion. However, in the case of using a radiation hardening type dicing film, after the dicing is performed, it is necessary to irradiate the dicing film with radiation to harden the dicing film and lower the adhesion. Therefore, it is necessary to perform an operation of irradiating radiation. Further, even if the crystal film is irradiated with radiation, the adhesion of the dicing film may not be sufficiently lowered. If the adhesion of the dicing film is not sufficiently reduced, the peeling of the film containing the semiconductor wafer from the dicing film tends to exert excessive force on the semiconductor wafer. Therefore, there is a flaw in destroying the semiconductor wafer. On the other hand, in the dicing/adhesive tape disclosed in Patent Document 2, in order to improve the peeling property, the dicing film is subjected to a release treatment. Therefore, it is not necessary to irradiate radiation when picking up a semiconductor wafer. However, in the production of the dicing/adhesive tape, it is necessary to perform a mold release treatment of applying a release agent on the surface of the diced film or forming irregularities on the surface of the die film. Further, when a release agent is applied to the surface of the diced film, the release agent tends to adhere to the die film. In this case, the picked semiconductor wafer may not be accurately mounted on the substrate. On the other hand, when irregularities are formed on the surface of the dicing film, there is a case where the morphological film is not filled with the dicing film, and when the dicing is performed, the viscous film is peeled off from the dicing film. Case. Further, in Patent Document 2, a polypropylene film, a polyethylene film, or a polyethylene terephthalate film is used as the dicing film. Therefore, it is easy to generate dicing chips when picking up a semiconductor wafer. If cutting chips are generated, there is a case where the semiconductor wafer cannot be accurately picked up. Further, the cutting chips adhere to the die film or the semiconductor wafer ±, and the picked semiconductor wafer cannot be mounted on the substrate with high precision and in the correct direction. / The purpose of the invention is to provide a dicing/adhesive tape for cutting a semiconductor wafer and picking up a semiconductor wafer together with an adhesive film without the need to perform illumination work, but together with the present state of the art. The die bond film is easily peeled off, and the semiconductor wafer is taken out; and a method of manufacturing the semiconductor wafer using the dicing/bonding crystal 128480.doc 200842957 is used. According to the present invention, a dicing/bonding ribbon can be provided, which is characterized in that: ^ is used to cut a semiconductor wafer, a semiconductor wafer is obtained, and the bonding semiconductor is bonded by a user who has a film and a paste. The non-adhesive film on the surface of the above-mentioned mucto film is a non-adhesive film containing a (meth)acrylic tree-crosslinked crosslinked body as a main component. Further, for example, a dicing film may be attached to the surface of the non-adhesive film on the side opposite to the surface on which the die-bonded film is attached, and then diced. Alternatively, the above (4) film itself may be cut into a crystal film. As described above, the squeegee/adhesive tape of the present invention refers to a tape used for dicing and die-bonding, and has the above-mentioned viscous film and non-adhesive film as essential structures, and may additionally have: knives ^ Μ does not have / the polycrystalline ribbon does not have a dicing film 犄 'can be used in the dicing, the additional preparation of the dicing film. The dicing film can be attached to the surface of the non-adhesive film which is attached to the side opposite to the surface on which the morphological film is attached, and is cut. In this case, although the dicing/adhesive tape does not have a dicing film, since the dicing film also uses a dicing film, it is still a dicing/bonding band. From a particular aspect of the dicing/polycrystalline ribbon of the present invention, the elongation of the non-adhesive film at the point of failure is in the range of 5 to 1%. In this case: when cutting with a (four) blade, it is not easy to produce cutting chips. In another specific aspect of the dicing/mulet zone of the present invention, the surface energy of the surface of the non-adhesive film to which the above-mentioned die film is attached is set to be n/wei. In this case, the die film can be more easily peeled off from the non-adhesive film. The adhesiveness at the interface between the adhesive film and the non-adhesive film is low, so that when the peeling is performed, a part of the defect of the crystal film can be suppressed and separated as a film, so that the film is attached to the film 128480.doc 200842957 The condition on the adhesive film. In still another specific aspect of the dicing/adhesive tape of the present invention, the release treatment is not performed on the surface of the non-adhesive film to which the above-mentioned die-bonding film is attached. The (mercapto)acrylic resin crosslinked body preferably contains a (meth) acrylate polymer having a carbon atom of 1 to 18 carbon atoms. The acid value of the (mercapto)acrylic acid polymer is preferably 2 or less. Further, the (meth) acrylate polymer ' is more preferably a (mercapto) acrylate polymer obtained by polymerizing at least one of butyl acrylate and ethyl acrylate. In another specific aspect of the dicing/mulet zone of the present invention, the above-mentioned die-bonding film comprises a thermosetting resin composition. In still another specific aspect of the dicing/polycrystalline ribbon of the present invention, the storage modulus of the above-mentioned viscous film at 25 ° C before thermal curing is in the range of 1 〇 6 〜 1 〇 9 。. The above-mentioned die-bonding film is preferably an epoxy resin, a polymer containing a functional group reactive with an epoxy group, and a thermosetting agent. More preferably, the die bond film contains the above polymer having a functional group reactive with an epoxy group in a ratio of from 1 〇 to 100 parts by weight based on 100 parts by weight of the epoxy resin. In another specific state of the dicing/adhesive ribbon, a dicing film is attached to the surface of the non-adhesive film opposite to the surface to which the above-mentioned viscous film is attached. The method for fabricating a semiconductor wafer of the present invention includes the steps of: preparing a dicing/dot ribbon and a semiconductor wafer of the present invention in a T step; bonding the semiconductor wafer to the dicing/adhesive strip and the above The adhesive film is attached with the surface of the opposite surface of the above-mentioned 128480.doc -10- 200842957 non-adhesive film; the semiconductor wafer bonded with the dicing/bonding ribbon is cut along with the above-mentioned adhesive film, and is divided into Each of the semiconductor wafers; and after dicing, the above-mentioned die-bonding film to which the semiconductor wafer is bonded is peeled off from the non-adhesive film, and the semiconductor wafer and the die-bonding film are taken out. —,丨~杯心々仏7, dried and diced

In the step of performing the dicing and taking out the semiconductor wafer, the semiconductor wafer is taken out without changing the peeling force between the viscous film and the non-adhesive film. In the present specification, the term "not changing the peeling force" means not performing a step of hardening any one of the layers of the dicing/adhesive tape by light irradiation or heating, thereby lowering the adhesive force, thereby changing the peeling force, or The step of changing the peeling force by either of the layers shrinking, or the step of changing the peeling force by the step of foaming any layer to change the peeling force, or the like. [Effect of the Invention] In the dicing/adhesive ribbon of the present invention, a non-adhesive film is attached to the adhesive film, and a (meth) propylene glycol-based resin crosslinked body is used as a main: a knife The adhesive film is peeled off from the non-adhesive film. Therefore, after the crystallization, the semi-conducting 仃 is removed along with the fused crystal. When the body is "the semiconductor wafer is not easy: from L: after dicing", even if the operation is not performed by light irradiation, it is easy to peel off from the non-adhesive film, and take out the attached half (four) ^" and in the present invention Even if it is not non-adhesive: it can easily peel away from the non-adhesive film. Therefore, it is also possible to apply a release agent on the surface of the diced film or to form a large amount of irregularities. In I28480.doc 200842957, since the release agent is not applied on the surface of the diced film, it is not on the viscous film. A release agent is attached. X, since the concave or convex shape is not formed on the surface of the diced film, the adhesion between the adhesive film and the non-adhesive film is not easily lowered. Therefore, the crystal cutting can be performed stably. In the method for fabricating a semiconductor wafer of the present invention, after the semiconductor wafer to which the dicing/adhesive tape of the present invention is bonded is cut and divided into individual semiconductor wafers, the semiconductor wafer is peeled off from the non-adhesive film. Since the mutex film is partially damaged, it is separated as a diaphragm, so that the film is less likely to adhere to the non-adhesive film. Therefore, since the obtained semiconductor wafer is bonded to the a film having a defect or not, the adhesion can be more accurately performed. [Embodiment] The present invention will be described with reference to the drawings and the specific embodiments of the present invention. In Figs. 1(a) and 1(b), the partially cut-away front cross-sectional view and the partially missing plan are not the dicing/adhesive strips of one embodiment of the present invention. As shown in Figs. i(a) and (b), the dicing/adhesive tape 1 has an elongated release film 2. On the upper surface 2a of the release film 2, an adhesive film 3, a non-adhesive film 4, and a cut film 5 are sequentially laminated. The surface 3a of the release film 2 to which the release film 2 is attached is bonded to the surface of the semiconductor wafer. ^ A a film 3 of the a non-adhesive film 4 and a dicing film 5 having a circular planar shape. The diameter of the dicing film 5 is larger than that of the viscous film 3 and the non-adhesive film 4. Further, the diameter of the adhesive film 3 is set to be the same as that of the non-adhesive film 4. However, the diameters of the two can also be different. 128480.doc 12 200842957 The dicing film 5 has a substrate 5a and an adhesive 5b applied to one side of the substrate 5a. The dicing film 5 is attached from the side of the adhesive 5b to the surface on the opposite side to the surface 4a of the non-adhesive film 4 to which the die film 3 is attached. The dicing film 5 is indirectly attached to the viscous film 3 via the non-adhesive film 4. The diameter of the dicing film 5 is larger than that of the viscous film 3 and the non-adhesive film 4. Therefore, as shown in FIG. 1(b), the dicing film 5 has a shape extending beyond the outer edges of the viscous film 3 and the non-adhesive film 4. The extension 5c. One surface of the extending portion 5c is attached to the upper surface of the release film 2 by the adhesive 5b. That is, the crystal film 5 is attached to the upper surface 2a of the release film 2 in the outer region of the outer edge of the die-bonding film 3 and the non-adhesive film 4. The dicing film 5 has a larger diameter than the viscous film 3 and the non-adhesive film 4 for bonding the dicing ring to the adhesive 5b located at the extending portion 5c when the semiconductor wafer is bonded to the surface 3a of the viscous film 3. on. As shown in Fig. 1(b), a plurality of laminated bodies including the die-bonding film 3, the non-adhesive film 4, and the diced film 5 are disposed at equal intervals along the longitudinal direction of the elongated release film 2. Further, in the side surface region of the dicing film 5, it is not necessary to provide the protective sheet 67. However, the protective sheet 6, γ is provided on the upper surface 2& of the release film 2. The protective film ό 7 is shaped like a shackle, and the dicing/adhesive tape 1 is applied to the die film 3, the non-adhesive film 4, and the dicing film 5 by curling into a roll shape, for example, protection The presence of the sheets 6, 7 is alleviated. Further, the thickness or shape of the release film 2 is not particularly limited. For example, a square-shaped release film can be used. In this case, only one laminated body including a die-bonding film, a non-adhesive film, and a dicing film may be disposed on the film. Further, the above laminated body may not be the same as the release film, and may be curled as described above. 128480.doc • 13· 200842957 The thickness or shape of the non-adhesive film and the diced film are in the form of a roll. Further, the die bond film is not particularly limited. The sub-grain/adhesive ribbon 1 is used to remove the semiconductor wafer with the adhesive film 3, and the peeling force of the non-adhesive film 3 and the non-adhesive film 4 is smaller than that of the non-adhesive film 4 and the dicing film 5 force. In this case, the adhesive film 3 can be easily peeled off from the non-adhesive film: the interface between the two. Therefore, it is easier to peel off and take out the semiconductor wafer from the non-film 4, together with the semiconductor wafer of the die film 3.

When the non-adhesive film 4 is peeled off from the adhesive film 3 and the semiconductor wafer is taken out, the peel strength of the film 3 and the non-adhesive film 4 is preferably 15 N/m or less, and more preferably 8 N/m or less. More preferably, it is 6 N/m or less. If the peel strength is too large, it may be difficult to peel the die film 3 from the non-adhesive film 4. A preferred lower limit of the peel strength is N/m. If the peel strength is too small, the semiconductor wafer is likely to generate a flying sheet when the crystal is cut. (Non-adhesive film) The non-adhesive film 4 is provided for peeling off the die-bonding film 3 from the non-adhesive film 4 in order to form an interface between the die-bonding film 3 and the non-adhesive film 4. The non-adhesive film 4 has non-adhesive properties. Further, in the present specification, the "non-adhesive film" includes not only a film having no adhesive surface but also a film which does not stick when touched with a finger. Specifically, the term "non-adhesive" in the "non-adhesive film" means that the non-adhesive film is attached to a stainless steel plate, and the non-adhesive film is peeled off at a peeling speed of 30 G mm/min. The case of g/25 mm or less. In the present embodiment, the non-adhesive film 4 contains a (meth) propyl 128480.doc • 14- 200842957 olefinic resin crosslinked body as a main component. In the dicing/adhesive tape disclosed in Patent Document 1, the dicing film is composed of a ray-curable adhesive, and the adhesion of the dicing film before irradiation is irradiated. Therefore, the self-cut film peeling of the die film must sufficiently reduce the adhesion of the film. Therefore, it is necessary to perform an unnecessary operation of irradiating the crystal film with radiation. Further, there is a case where the adhesion is not sufficiently lowered after the radiation is irradiated.

On the other hand, in the dicing/adhesive tape 1 of the present embodiment, since the non-adhesive film contains the (meth)acrylic resin crosslinked body as a main component, the die film 3 can be easily peeled off from the non-adhesive film 4 . Further, after the dicing is performed, when the semiconductor wafer is taken out together with the adhesive 3, the semiconductor wafer is not easily broken. When the surface is formed with irregularities, the crystal film peels off from the dicing film when the material is diced. In the dicing/adhesive tape disclosed in the above Patent Document 2, in order to improve the releasability, the surface of the die-cut film to which the die-bonded film is attached is subjected to demolding, which must be performed on the dicing film. A release agent is applied to the surface, or a release treatment for forming irregularities is applied. When the release agent is applied to the dicing film, there is a case where the release agent adheres to the morphological film. Further, in the case of the dicing film, in Patent Document 2, a polypropylene film, a polyethylene film, or a polyethylene terephthalate film is used as the dicing film. In the case of using the above film, cutting chips are easily generated when the crystal is cut. On the other hand, in the dicing/adhesive tape entanglement of the present embodiment, the adhesive film 3 can be easily peeled off from the non-adhesive film 4 without performing the release treatment on the non-adhesive film 4. Therefore, it is also possible to perform the release of the mold on the surface of the diced film 5 128480.doc 15 200842957 ^ or the extra work of forming the unevenness. Since the release agent is also applied to the surface of the diced film 5, the release agent does not adhere to the die film 3. Further, since the unevenness is not formed on the surface of the non-adhesive film 4, the cutting can be performed. Further, in the dicing/adhesive tape j of the present embodiment, it is difficult to generate cutting chips when the cutting date is performed. The main component of the upper 2 adhesive film 4 is a (meth)acrylic resin crosslinked body. Yushi X [Month I 4 ' non-adhesive film 4 contains 5 % by weight or more of a (meth)acrylic acid tree: a crosslinked body. The non-adhesive film 4 containing the above-mentioned (meth)acrylic resin crosslinked body as a main component is softer than the polyolefin film, and has, for example, a low storage elastic modulus. Further, by using the above-mentioned (meth)acrylic resin, it is possible to prevent fusion of the interface between the non-adhesive film 4 and the die-bonding film 3, and it is possible to prevent the occurrence of defects when t is taken. Further, by reducing the elongation at break of the non-adhesive film 4, when the cutting blade is subjected to dicing, the cutting swarf will be excellent in discharge, and the cutting of the whisker 2 can be suppressed. When the (meth)acrylic resin crosslinked body: the main component and the non-adhesive film 4 are used, the peeling property after cutting can be improved. Further, by selecting the (meth) fluorene crosslinked body as a main component, the polarity of the non-adhesive film 4 can be lowered, or the elastic modulus can be lowered, or the elongation at break can be easily controlled. Further, in the present invention, "(meth)acrylic acid" means "methacrylic acid or acrylic acid". The material constituting the non-adhesive film 4 is not particularly limited, and may be light hard or may be a thermosetting resin. In the case of using the above photocurable sapphire or thermosetting resin, the filament (4) 4 can be formed by hardening the light hard 128480.doc -16 - 200842957. For the non-fourth 臈4 formed, it is preferred that the resins have been hardened. In the case where the hardening of the resin is not completed, for example, when the crystal is cut by laser light, the 彳 is caused by the laser light to be non-toxic: the film 4 is fused and adhered to the ruthenium film 3. Further, in the case of manufacturing a semiconductor wafer, it is preferable to pick up the peeling force of the non-adhesive film 4 after the dicing. In this case, it is preferred that the non-adhesive film 4 is not cured by light irradiation or the like, and therefore it is preferable to use the non-adhesive film 4 formed using the photocurable wax or the thermosetting resin. It is these hardening resins that have hardened. As the material constituting the non-adhesive film 4, in addition to the (meth)acrylic resin crosslinked body, an epoxy resin, an amino phthalic acid ethyl ester resin, a polyoxyn oxy resin, or a polyimide resin may be used. Other synthetic resins. The (meth)acrylic resin crosslinked body is not particularly limited, and a (meth)acrylate polymer is preferred. When the main component of the non-adhesive film 4 is a (meth) acrylate polymer, the dicing film 3 is peeled off from the non-adhesive film 4, and the viscous film 3 is less likely to be defective. Further, the machinability at the time of cutting or the peeling property after dicing can be further improved. Further, in the case of using a (meth) acrylate polymer, the storage elastic modulus and the elongation at break can be easily controlled. The (meth) acrylate polymer is not particularly limited, and a (meth) acrylate polymer having an alkyl group having 1 to 18 carbon atoms is preferred. When a (meth) acrylate polymer having an alkyl group having 1 to 18 carbon atoms is used, the polarity can be sufficiently lowered, and the surface energy of the non-adhesive film 4 can be lowered, and the peeling property can be further improved. If the carbon number of the alkyl group exceeds 18, there is a solution concentration of 128480.doc -17- 200842957. The carbon number of the alkyl group becomes difficult, and it is difficult to produce the non-adhesive film 4, which is more preferable, and the polarity can be further lowered.

As the (meth)acrylic acid-based polymer, a (meth)acrylic acid alkyl ester monomer having an alkyl group having 1 to 18 carbon atoms is preferably used as a main monomer, and the monomer and the functional group are contained. The (meth)acrylic acid vinegar polymer obtained by copolymerization of a monomer and, if necessary, other modifying monomers which are copolymerized with each other according to a usual method. In this case, the carbon number of the alkyl group of the (meth)acrylic acid alkyl ester monomer is more preferably 2 or more, particularly preferably 6 or more. The weight average molecular weight of the above (meth) acrylate polymer is preferably in the range of 200,000 to 2,000,000. If it is less than 20,000, a large number of appearance defects may occur during coating and molding. If it exceeds 20,000, the polymer solution may be too thick to be taken out during production. The monomer for modification is not particularly limited, and it is preferably not a monomer having a carboxyl group. When a monomer having a carboxyl group is used, there is a case where the polarity of the non-adhesive film 4 is increased and the pickup property is adversely affected. Examples of the monomer which can be used as the monomer for the above-mentioned modification include butadiene having a double bond, stupid ethylene, isoprene, or acrylonitrile. The (meth)acrylic acid alkyl ester monomer is not particularly limited, and a preferred oxime is esterified with (mercapto)acrylic acid by a grade having a carbon number of 1 to 18 or a secondary alcohol. The alkyl (meth) acrylate monomer obtained by the reaction. Specific examples of the (mercapto)acrylic acid alkyl ester monomer include methyl (meth)acrylate, ethyl (meth)acrylate, propyl acrylate (meth)acrylate, and isopropyl (meth)acrylate. (fluorenyl) n-butyl acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl 128480.doc -18- 200842957 =, or (methyl )Acrylic Laurel _ and so on. Among them, it is especially good that the stone of the courtyard is reversed? 4 or more alkyl (meth)acrylate monomers. The alkyl (meth) acrylate monomer may be used singly or in combination of two or more.

If the (meth) acrylate polymer which is the main component of the non-adhesive film 4, the acid value is preferably 2 or less. When the acid value is 2 or less, the surface energy can be reduced, and the peeling property can be further improved. The method of adjusting the acid value to 2 or less is not particularly limited, and it is preferred that the monomer having a carboxyl group is not used as the monomer for the modification or that no ester is produced during the reaction. The method of adjusting the reaction by means of hydrolysis. Further, in the present specification, the acid value means the number of milligrams of potassium hydroxide required to neutralize the free acid contained in the 丨g (meth) acrylate polymer. The non-adhesive film 4 preferably contains, in addition to the (meth)acrylic resin crosslinked body as the main component, a double bond group having a reactive group with a propylene group, and the weight average molecular weight is 500~. A concentrating polymer having a glass transition temperature of Tg & 25 cm or less in the range of 50,000. When the polymer is used, the peeling property of the die film 3 to the non-adhesive film 4 can be further improved. Further, the elongation at break of the non-adhesive film 4 can be easily designed in the range of 5 to 100%. When the weight average molecular weight of the above-mentioned polymerized polymer is less than 500, the effect by the polymerization of the polymerizable polymer may not be sufficiently obtained. If it exceeds 50,000, the peeling property of the adhesive film 3 to the non-adhesive film 4 may be lowered. Case. The above-mentioned polymer is not particularly limited, and it is preferred to contain a skeleton having a softness of 128480.doc -19-200842957, such as a polyether skeleton, a polyester skeleton, a butadiene skeleton, and a polyurethane urethane skeleton. , Shixi vinegar skeleton, or dicyclopentadiene skeleton. It is said to have a soft skeleton, 咅% μ, +, and the Tg of the above-mentioned nutrient of the woody day is 25t or less. Further, as the above oligomer, it is preferable to use an acrylic oligomer having a polyether skeleton or a polyester skeleton. A propylene oxime oligosaccharide which is a rabbit and has a polyether skeleton or a polyester skeleton, and may be exemplified by a polyglycol propylene diacetate vinegar or a polyacrylic acid urethane oligoacrylate. Polymer. Examples of the commercially available product include M-225 (manufactured by Toagosei Co., Ltd.), .π(9) (manufactured by Kokusai Industrial Co., Ltd.), and the like. The double bond group which can react with the propylene group of the above oligomer is not limited, and examples thereof include a propyl group, a methacryl group, an ethylene group or an allyl group. Of these, 'preferably, it is a propylene group. The above oligomer preferably contains two or more double bond groups reactive with a propylene group. Further, a double bond group which is reactive with the above propylene group may be present at two terminals of the molecule or may be present in a molecular bond. Among them, it is preferred that only two double-bonded groups which are reactive with the above propylene group are present at both ends of the molecule, and it is preferable that only two propylene groups are present at both ends of the molecule. Further, a double bond group which is reactive with the above propylene group is present at both ends of the knives and in the molecular chain. Examples of the scale bone include a polypropylene oxide skeleton or a polyethylene oxide skeleton. As the acrylonitrile small article having the above-mentioned poly-crosslinking skeleton and having an acryl group only at both ends of the molecule, polyacrylonitrile-acrylic acid vinegar or poly-128480.doc -20-200842957 can be cited. As a commercial product, it can be listed as M-220 manufactured by Nakamura Chemical Industry Co., Ltd. (above, all from East Asian ester urethane acrylate oligomers: UA340P, UA4200 (above, both)

Made); ARONIX M-1600, AR〇] manufactured by sjIX Synthetic Company).

Further, as the acrylic acid-polymerizable polymer, a 3 to 1 oxime-functional urethane hydroxyacetate oligomer can be preferably used. If the amino group f acid s is an acrylic acid oligomer of 3 to H) functional group, the skeleton will have appropriate flexibility. If the aminoglycolic acid acetoacetic acid oligomer is less than trifunctional, (4) the softness is too low, the viscous membrane is cut by 3%, and the grain is liable to produce whisker-like cutting chips. If it exceeds the hydrazine function, the softness is too high. 'There is a case where the die film 3 is contaminated when the die film 3 is cut. The above 3- to 10-functional urethane acrylate polymer may be an acrylic acid sulfonate or a acrylic acid oligomer having a polyglycidyl alcohol main chain. As a commercially available product of the above 3- to 10-functional urethane acrylate polymer, 1;-21>1>8,1;-sister, 11_嶋, 1;_1 view, 11-8_ 321>, 1;· 324A > U-108A ^ U-200AX . UA-4400 . UA-2235PE ^ UA-160TM, UA_6100 (above, all manufactured by Shin-Nakamura Chemical Industry Co., Ltd.); UN-7_, UN-7700 , UN_333, UN_1255 (above, all manufactured by Root Industrial Co., Ltd.). The amount of the oligomer to be added is not particularly limited, and in order to obtain the effect of blending the oligomer, it is preferred to blend 1 part by weight or more with respect to 100 parts by weight of the (meth)acrylate polymer. A preferred upper limit is 5 parts by weight. If the amount of the above-mentioned polymer is too large, the raw material may not be dissolved, and the film 4 may not be produced. In the case where a polymer having a propenyl group at both terminals is used, the amount of the oligomer 128480.doc -21 - 200842957 is preferably 1 part by weight based on 1 part by weight of the (meth) acrylate polymer. It is preferably 100 parts by weight, more preferably 1 to 5 parts by weight. In the case of a polyfunctional urethane acrylate polymer, the amount of the polymer is preferably 1 part by weight based on 1 part by weight of the (meth) acrylate polymer. More preferably, it is 1 to 30 parts by weight. When a non-adhesive film 4 is formed using a photocurable resin or a thermosetting resin, it is necessary to use a photoreaction initiator or a thermal reaction initiator in advance by light irradiation or The photoreaction initiator is not particularly limited, and for example, a photoradical generator or a photocation generator can be used. Examples of the thermal reaction initiator include a thermal radical generator. The photo-radical generating agent is not particularly limited, and examples thereof include Irgacure 184, Irgacure 2959, hgaeUre 907 > Irgacure 819 ^ Irgacure 651 ^ Irgacure 369 ^ Irgacure 379 (above, all by Cibafin (Ciba Speciahy chemia (4) company); benzoin methyl ether; benzoin ethyl ether; benzoin isopropyl ether; 1 ^ (^): | 11 butyl? 0 (8 8 8? 1 & 卩 & 11 company made), etc. As the photocation generating agent, an anthracene salt such as an aromatic diazonium salt, an aromatic salt or an aromatic sulfonium salt; an iron-propadiene complex, a titanocene complex 19, and an aryl sulfoxide aluminum can be used. An organic metal complex such as a complex compound. Examples of the thermal radical generating agent include cumene hydroperoxide, emulsified diisopropyl benzoate, a secondary oxidized secondary group, and a lauryl peroxide. Benzoyl peroxide, tertiary butyl peroxy isopropyl carbonate, peroxy-2-ethylhexyl^8480^00 -22 - 200842957 Acid tertiary: vinegar, peroxy-2-ethylhexanoic acid, tertiary pentyl vinegar, etc. Organic peroxide; 2,2-azobis(isobutyronitrile), 〗 〖, _ azobis' Λ (hexonitrile), 2,2,-azo (2,4-di, yl)戍 guess), dimethyl 2, 2, _ azo bis = nitrogen compound, etc. ^ 文 axis) and other non-adhesive film 4 preferably further contains a filler material, which can further improve machinability. Suppressing the adhesion of cutting chips to the 2 crystal film 3 or the semiconductor wafer. The average particle size of the above-mentioned filling pure in the station s is preferably Gi~ig_, preferably ~5 Μ"1. If the average particle size is too large, it exists In the case where the surface of the adhesive film 4 is uneven, if it is too small, the filler is not particularly limited as long as it does not sufficiently improve the machinability. The amount of the oxide oxide or the oxygen filler may be used in comparison with 1 〇. The total amount of the material of the non-adhesive film 4, which is the weight of the filler, is preferably 'Ο'. If the amount of the weight filler is too large, the non-adhesive film 4 may be broken when it is expanded. If the amount is too small, the machinability cannot be sufficiently improved. Further, the non-adhesive film 4 may further contain an ultraviolet absorber. If it contains ultraviolet (4), it can carry (4) (4) to the adhesive film 3. The method for producing the non-adhesive film 4 is not particularly limited, and examples thereof include applying a material constituting the non-adhesive film 4 to a release film, and performing light irradiation and/or heating to form a non-adhesive film on the release film. After the film 4 is adhered, the release film is peeled off. The thickness of the non-adhesive film 4 is not particularly limited, and is preferably 30 to 100 μm. 128480.doc -23- 200842957 If the thickness is less than 30 μm, there is a case where sufficient expansion property cannot be obtained. If the thickness exceeds 00 μm, there is a case where it is difficult to obtain a uniform thickness. If the thickness is not uniform, there is a case where it is impossible to cut the two rows when manufacturing the semiconductor wafer. The non-adhesive film 4 is attached with the surface energy of the surface 4a of the adhesive film 3, preferably 4 〇 N/m or less. If the non-adhesive film 4 has non-adhesive properties and the surface energy of the surface is 40 N/m or less, the adhesion crystals can be more easily peeled off from the non-adhesive film 4. Further, at the time of peeling, one part of the adhesive film is partially broken, and as a 臈 = knife, the film is less likely to adhere to the non-adhesive film 4. Therefore, the defect of the crystal film 3 is less likely to occur, so that the crystal can be more accurately performed. The surface energy of the surface of the non-adhesive film 4 is more preferably in the dry circumference of 3 〇 to 35 I. If the surface energy is too high, there is a case where the peeling failure 2 occurs at the time of picking up. If it is too low, there is a surface of the flying sheet due to the water pressure at the time of the crystal cutting. For example, a wettable agent can be used, and according to the MS The measurement was performed at π%. The storage elastic modulus of the non-adhesive crucible 4 at 23t is preferably within 1 〇〇 of 〇〇G MPa. If the elastic modulus of the material is less than 1 MPa, the case where you are Χ±± decreases. If it exceeds 1000 MPa, the pickup property may be lowered. Better is 1〇~1〇〇〇Mpa. Under H. The elongation of the film 4 at the breaking point, i.e., the elongation at break, is preferably /; 5 / a lower limit of 10%. If the elongation at break is 53⁄4 or more', the swelling property of the semiconductor wafer will be further improved. The upper limit of the non-adhesive film is further improved. 1 〇〇%. If the elongation at break of 128480.doc * 24 - 200842957 exceeds 100%, the occurrence of whisker cutting chips cannot be sufficiently suppressed at the time of crystal cutting. The upper limit of the elongation at break of the non-adhesive film 4 is preferably 60%. The (meth) acrylate polymer is preferably a (meth) acrylate polymer obtained by crosslinking a component containing at least one of butyl acrylate and ethyl acrylate, because the · The (meth) acrylate polymer has a low glass transition temperature and is excellent in flexibility. In this case, the adhesion and machinability of the non-adhesive film 4 to the die film 3 can be improved.

(Mold film) "The above-mentioned die film 3 can be cut together with a semiconductor wafer during dicing. The die film 3 can be removed after being diced, together with a semiconductor wafer, for bonding a semiconductor wafer. The adhesive film 3' can be formed, for example, by using a curable resin composition containing a curable resin, etc. The curable composition before curing is very flexible, and thus is easily deformed by an external force. However, after obtaining a semiconductor wafer, The semiconductor wafer is firmly bonded to a substrate such as a substrate by applying energy to heat or light to the die 3. The curable resin is not particularly limited, and examples thereof include thermoplastic resin and thermosetting property. Resin, photocurable resin, etc. The thermoplastic resin is not particularly limited to a (meth)acrylic acid vinegar resin, a polyester resin, a polyvinyl alcohol tree pond, or a polyacrylic acid B. Two or more types are used alone. For example, the JJ 1 is not particularly limited as the above-mentioned thermosetting resin, and the epoxy resin or the polyamino phthalate resin is not particularly limited. The thermosetting resin may be used alone or in combination of two or more. The photocurable resin is not particularly limited, and examples thereof include an epoxy resin containing a photocationic catalyst such as a photosensitive sulfonium salt, or An acrylic resin having a photosensitive vinyl group, etc. These photocurable resins may be used singly or in combination of two or more. As the curable resin, epoxy resin is particularly preferably used.

It is a hot-melt adhesive resin such as poly (meth) acrylate resin which is mainly composed of methyl methacrylate or butyl acrylate. The ruthenium film 3 is more preferably a thermosetting resin composition. Further, the adhesive film 3 is preferably a high molecular polymer containing an epoxy resin, a functional group reactive with an epoxy group, and a thermal curing agent. In this case, the bonding reliability between the semiconductor wafer bonded to the bonding film 3 and the substrate or between the plurality of semiconductor wafers can be further improved. Further, the epoxy resin generally means a lower molecular weight polymer (prepolymer) having two or more epoxy groups in the i molecule and having a molecular weight of about 3 Å: _G, and an epoxy resin therewith. A thermosetting resin produced by a ring opening reaction of a group. The adhesive film 3-phase epoxy resin (10) parts by weight, preferably in the ratio of ι 〇 to (10): parts, has a polymer having a functional group reactive with an epoxy group. The amount of the above polymer is more preferably Η. If the amount of the polymer is too large, the fluidity is insufficient, and “the adhesion between the ruthenium and the wafer is poor, or the whisker is increased during the dicing. The situation is caused by the fact that there are too few bismuth knives, which are present in the 3% of the smear/adhesive day, which may cause poor appearance. 128480.doc •26- 200842957 As the above ring, there are polycyclic hydrocarbon bones: :;: It is not particularly limited, and it is preferably an epoxy tree having a skeleton in the main chain = resin. The mechanical strength or stagnation resistance of the polycyclic hydrocarbon in the primary bond is used. Tinan moisture resistance. ... Note that the sub-epoxy resin in the main bond is the right 炙 _ ^ The olefinic hydrocarbon skeleton, and the pile is not limited, for example, it can be listed in the emperor. Dicyclopentadiene dioxide, phenolic phenolic aldehydes in the olefinic skeleton, raw, wood - /, one% 戍 以 ... ... 漆 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ; shrinking is not a dicyclopentadiene type epoxy resin), 细 尺 甘油 甘油 、, 2-glycidol 芡 μ- Di-sweet, di-n-butyl, diglycidyl-naphthalene, from ketone, 1,6-diglycidylnaphthalene naphthalene, 27-starting ^1, '----------- Naphthalene, triglycidyl tetraglycidyl extract, etc. and eight 'A5,6·" Tsai-type epoxy tree; epoxy resin (hereinafter, revealed as glycerol oxygen =: tetraphenyl-phenyl-epoxy wax , four (shrinking two: two phantom ethyl or epoxide-cyclohexylmethyl-methyl% hexanthene g|f. Its towel, preferably dinuclear pentylene type epoxy Resin or naphthalene type epoxy resin. The side of the main chain with polycyclic hydrocarbon skeletons can be used alone. ^U can be used in two or more. 'The above dicyclopentadiene type epoxy resin and naphthalene% The oxygen resin may be used singly or in combination. The main chain is preferably a lower limit of the weight average molecular weight of the above epoxy resin having a polycyclic smoky skeleton of 500 Å. If the molecular weight of one sentence is less than 500', the mechanical strength, heat resistance, and/or wetness of the cured product after hardening may not be sufficiently improved. If the weight average is 128480.doc -27 - 200842957 = The cured product is too rigid and becomes weak. The polymer having a functional group reactive with the above-mentioned ring gas group is not particularly limited. For example, 如J. · A polymer having an amine group or an amino carboxylic acid ethyl amide group: a mercaptoamine group, a hydroxyl group, a carboxyl group, or an epoxy group, etc. Among them, a high molecular weight polymer having a % oxy group is used. In the case of a polymer of an oxy group, the flexibility of the cured product can be improved: and an epoxy resin having an epoxy group having a right-handed sound & The high molecular weight polymer has a % of the shape of the polymer, and the hardened material can improve the mechanical strength, heat resistance, and resistance by the choice of g μ on the polycyclic hydrocarbon skeleton in the main chain. It is wet, and it can be improved by the high molecular weight polymer of the above-mentioned bad oxygen. The molecular weight of the polymer having the above epoxy group may be a weight: a molecular weight of from 10,000 to 2,000,000. The polymer having the epoxy group is not particularly limited as long as it is a polymer having an epoxy group in the terminal group and/or the side chain (lateral position), and examples thereof include a group having an epoxy group. Dilute acid rubber, butadiene rubber with epoxy-I-milk emulsion, bisphenol-type high molecular weight epoxy resin, this dairy-based resin with epoxy depleted/3 fluorene base, epoxy group A propionic acid resin, a urethane resin having an epoxy group, or a polyester resin having an epoxy group. In the first place, in the case of the mechanical strength or heat resistance of the hardened material, it is preferred that the early wilderness uses an epoxy-based acrylic tree. The guar polymer of the ancient octagonal arsenic having such an epoxy group may be used singly or in combination of two or more. The thermosetting agent is not particularly limited, and examples thereof include a tricarbone 128480.doc -28-200842957 a tetrahydrohydrophthalic acid field-like heat-hardening type acid anhydride-based hardener, a benzene-based hardener, and an amine system. A latent curing agent such as a curing agent or dicyanodiamine or a cationic catalyst type curing agent. These heat curing agents may be used singly or in combination of two or more. Among the above-mentioned thermosetting agents, a latent curing agent such as a heat-curing type curing agent which is liquid at normal temperature or a polyfunctional amount and a small amount of an equivalent amount of cyanoguanamine is preferably used. By using such a hardener, the softness of the adhesive film before curing can be improved at room temperature, and the workability can be improved. Representative examples of the heat-curing type hardener which is liquid at normal temperature include, for example, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylic acid anhydride, or An acid anhydride-based curing agent such as trialkyltetrahydrophthalic anhydride. Among them, in terms of hydrophobization, it is preferred to use methylalic acid anhydride or trialkyltetrahydrophthalic anhydride. These acid anhydride-based hardeners may be used singly or in combination of two or more. In the above thermosetting resin composition, the above-mentioned thermosetting agent and curing accelerator may be used in combination in order to adjust the curing rate or the physical properties of the cured product. The hardening accelerator is not particularly limited, and examples thereof include an imidazole-based curing accelerator and a tertiary amine-based curing accelerator. Among them, an imidazole-based hardening accelerator is preferred in terms of a reaction system for adjusting the curing rate or the physical properties of the cured product. These hardening accelerators may be used singly or in combination of two or more. The imidazole-based hardening accelerator is not particularly limited, and examples thereof include 1-cyanoethyl-2-phenylimidazole at the 1-position of imidazole with a cyanoethyl group, or 128480.doc -29-200842957 The trade name "2MA〇K_pw" (manufactured by Shikoku Chemical Industry Co., Ltd.) of polycyanic acid is used to protect alkaline. These imidazole-based hardening accelerators may be used singly or in combination of two or more kinds. When the phthalic anhydride-based curing agent is used together with, for example, an imidazole-based hardening accelerator, it is preferred to set the amount of the acid anhydride-based curing agent to the equivalent of the % oxygen group. In theory, the required equivalent is below. When the amount of the acid anhydride-based curing agent is excessively increased to a required amount or more, it is guided by moisture: ionic grains are easily eluted from the cured product of the thermosetting resin composition. For example, in the case of using hot water, the hardened material is extracted from the hardened material, and the pH of the extract is lowered to about 4 to 5, which causes a large amount of gas ions extracted from the epoxy tree to be eluted. In the case where an amine-based curing agent is used in combination with a curing accelerator such as an imidazole-based curing accelerator, it is preferred that the amount of the amine-based curing agent added is theoretically based on the epoxy group. Less than the required equivalent. When the amount of the amine-based hardener added is more than necessary, the chlorine ions are likely to be eluted from the cured product of the thermosetting resin composition due to moisture. For example, when the eluted component is extracted from the hardened hardened material by using hot water, the pH of the extract liquid is high and becomes alkaline, and the chlorine ions extracted from the epoxy resin are largely eluted. The method of forming the above-mentioned thermosetting resin composition into a film shape to obtain the die-bonding film 3 is not particularly limited, and a die coater coater, a lip coater (up c〇ater), and a comma can be used. A coater (c〇mma eoater), or a gravure coater (Gravure coater). Among them, a gravure coater is preferred because the thickness of the die bond film is as high as 128480.doc -30-200842957, so that even if there is foreign matter mixed, it is difficult to form streak spots. The storage elastic modulus of the adhesive film 3 at 25t: before hardening, β is in the range of 1〇6~1〇9h. If the storage elastic modulus of the crystal film 3 is too low, the shape retention performance is degraded, and the film is damaged when picked up. If it is too large, the film 3 cannot be sufficiently adhered to the non-sticky layer. On the film 4, the dicing/adhesive tape 1 could not be produced. (Cut crystal film) Second! = 5 is used to attach to the cutting ring. Further, the dicing crucible 5 is used for the expansion property after the dicing, or for improving the pick-up property of the semiconductor wafer with the acicular film 3. The above-mentioned diced film 5 has an adhesive 讣 which is formed by coating an adhesive on a substrate & The dicing film ΐ ΐ has a dicing film 5, and it is not necessary to have the dicing film 5. The base material 5a is not particularly limited, and is a polyester film such as a acid vinegar film, a polytetraethylene film, a polyethylene film 2: a film I methyl glutamate film, a polyethylene acetate film, and the like. Polycrystalline flue film, plastic film such as polyvinyl chloride film or polyimide film. Among them, it is preferred to use k-thin: a film because of its excellent expandability and low environmental burden. The adhesive 5b is not particularly limited, and examples thereof include a acrylic acid-based adhesive, a synthetic resin-based adhesive, and a rubber-based adhesive. Among them, a pressure sensitive acrylic adhesive is preferred. In the case of an acrylic adhesive, the adhesion to the non-adhesive film 4 and the peelability from the self-cutting ring can be improved, and the cost can be reduced. Further, the adhesive 5b is preferably constructed by attaching, for example, a cutting ring. As the material constituting the above-mentioned substrate 5a, polyolefin or polygas 128480.doc -31 - 200842957 is particularly preferable as the adhesive 5b, and a propionate-based adhesive T 糸 adhesive is preferable. By using these better materials ', a moderate expansion property can be obtained when the semiconductor wafer is picked up. (release film) = release film 2 is used to protect the die-bonded film 3 to which the semiconductor wafer is attached. & The 〇-cut/adhesive tape 1 is provided with the release film 2, but it is not necessary to have a die. Membrane 2. Γ Γ 作为 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 脱 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 脱 聚 聚 聚 聚Polymethylpentene oxime, polyvinyl acetate vinegar film and other polyglycols, and plastic film such as vinyl film or polyimide film, etc. Among them, a polyethylene terephthalate film or the like = a resin film is preferred because it is in terms of smoothness, thickness precision, etc.; the above-mentioned release enamel may be composed of one layer of the above film, or may be laminated as described above. It is composed of two or more laminated films. In the case where the release film is a laminate film in which a plurality of films are laminated, two or more different films may be laminated. In Fig. 2, the tangential/adhesive zone is partially deficient in the front section. Further, the above-mentioned release film 2, the adhesive film 3 and the non-adhesive film 4 are sequentially laminated in the dicing/adhesive tape u shown in Fig. 2 . That is, the dicing/adhesive tape u is not the same as the dicing film 5; In the same manner, it is not necessary to provide the dicing film 5. In the dicing/mulet zone 1, the non-adhesive film 4 can also be used as a dicing die. 128480.doc -32- 200842957 In Fig. 3, a dicing/adhesive strip of another embodiment of the present invention is shown in a partially missing front cross-sectional view. The dicing/adhesive strip 15 shown in Fig. 3 is constructed in the same manner as the dicing/adhesive strip W except that the non-adhesive crucible is not (4). In the dicing/adhesive strip 15, the release film 2, the viscous film 3, the non-adhesive (4), and the diced film 5 are sequentially laminated. The non-adhesive film 16 has non-adhesive properties. That is, the first layer 17 and the second layer are non-adhesive. Further, the non-adhesive film 16 will have a (meth)acrylic resin crosslinked body as a main component. The non-adhesive film 16 is attached with the surface 16a of the die-bonding film 3, i.e., the surface energy of the surface of the first layer of enamel attached to the surface of the crystal film, preferably 4 〇 N/m or less. In the case of the knot, at the time of picking up, the part of the die film is defective and is separated as a film, == is attached to the non-adhesive film 16, and can be easily removed from the point, the M ^ film 3 c X' does not cause a defect on the adhesive film 3, and the adhesion can be accurately performed. = The non-adhesive film of the crystal/adhesive tape 15 has a two-layer structure in which two layers are laminated, so that the first and second layers 17 and a can have different At, and #°° column can be The first layer 17 has a function of improving the peeling property of the film 16 of the adhesive bonding function, and the non-adhesive film 16 has a two-layer structure, which can be easily used as a dicing/ The best physical properties of the sticky layer. (Method of Manufacturing Semiconductor Wafer) A method of manufacturing a semiconductor wafer using the above-described dicing is described below with reference to Figs. 4 to 10 . 128480.doc •33- 200842957 First, the semiconductor wafer 21 of the above-described dicing/bonding layer is prepared. The α τ is not the above-mentioned half-body wafer 21 and the right circular μ 〃 has a 千-shaped shape. Although not shown in the respective three regions of the semiconductor wafer 21, they are divided into matrix semiconductors by the vias (8) to form circuits for forming the respective semiconductor wafers. 2 body day 囫 21 series to achieve a certain thickness, the inside 2

The thickness ' of the semiconductor wafer 21' is preferably 30 Å or more. If the thickness of the semiconductor wafer is less than 30 μm, cracking may occur during polishing or during operation, causing damage. Further, in the case of the following dicing, the semiconductor wafer 21 can be cut into a matrix. The semiconductor wafer 21 to be wounded is loaded on the stage 22 in an inverted state as shown in Fig. 5 tf'. #, The semiconductor wafer 21 is carried on the stage in such a manner that the surface 2u of the semiconductor crystal is in contact with the stage 22. On the stage 22, a ring-shaped cutting ring 23 is provided from the outer peripheral side surface 2ic of the semiconductor wafer 21 at a fixed interval. The height of the dicing ring 23 is set to be equal to the total thickness of the semiconductor wafer 21, the die-bonding film 3, and the non-adhesive film 4, or slightly smaller than the total thickness. Next, as shown in Fig. 6, the semiconductor wafer 21 is bonded to the surface 3a of the dicing/mud ribbon. The dicing film 5 has an extension portion 9 which extends beyond the outer edges of the viscous film 3 and the non-adhesive film 4 to the outside. As shown in Fig. 6, the release film 2 of the dicing/adhesive tape 1 is peeled off on one side, and the adhesive 5b of the exposed portion 5c of the exposed dicing film 5 is attached to the dicing ring 23. Further, the adhesive film 3 exposed from 128480.doc -34 - 200842957 is bonded to the inside 21b of the semiconductor wafer 21. In Fig. 7, a state in which the semiconductor wafer 21 is bonded to the die film 3 is shown in a front sectional view. The adhesive film 3 is bonded to the secant inner surface 21b of the semiconductor wafer 21. The extension portion 5c of the dicing film 5 is supported by the dicing ring 23 so as not to apply excess force to the semiconductor wafer 21.

Next, as shown in the front cross-sectional view of Fig. 8, the semiconductor wafer 21 to which the die-bonding film 3 is bonded is taken out from the stage 22 and turned over. At this time, the cutting ring 23 can be taken out in a state of being attached to the dicing film 5. The semiconductor wafer 21 taken out is carried on the other stage so that the surface of the semiconductor wafer 21 is etched and bonded to the semiconductor wafer 2, and the semiconductor wafer 2 is divided. The wafer 21 side is diced as indicated by an arrow χ in Fig. 8 .目千¥体 As shown in Fig. 9, after dicing, it is completely cut. For example, the dicing film 3: square can also be inserted into the non-adhesive :: + position. In Fig. 9, the cutting blade is inserted deeper than the interface of the adhesive film 4, and the cut-in portion is formed: "曰..., not again, in Fig. 9, when cutting by two stages (stage cutting) Preventing the growth of the conductors of the Japanese yen 21 && 4 cutting and cutting. If the cutting is performed, the cutting of the cutting 8 can also be performed by -: cutting the semiconductor wafer 21 by the undercut: The cutting method at the cutting stage is not particularly limited, for example, a cuttable single cutting method; two in sequence, using two blades for cutting 128480.doc -35- 200842957 and using the surface of the cut semiconductor wafer The oblique cutting method of the v-shaped blade or the like. In the case of I, since the semiconductor wafer is not easily broken during cutting, the stage cutting method can be preferably used. Further, the above-described cutting can also use laser light without using a cutting blade. 'The semiconductor wafer can also be cut by irradiation of laser light. In this case, the slit 1J can be penetrated through the semiconductor wafer 21 and the die film 3, and the laser light can penetrate the die film 3, and Reaching non-adhesive film 4. Even if the dicing is performed by the irradiation of the above-mentioned laser light, the non-adhesive film 4 is not easily dissolved on the viscous film 3. The cleavage/bonding crystal of the radiation-hardened dicing film attached to the viscous film In the case where the laser is carried out by the laser light (4), there is a case where the crystal film is melted and adhered to the crystal film. The semiconductor wafer cannot be taken out due to & In the adhesive tape, the non-adhesive film 4 does not have an adhesive force due to light irradiation, and contains a (meth)acrylic resin crosslinked body as a main component. Therefore, even if laser light is irradiated, it is less likely to be dissolved. After the semiconductor wafer 21 is diced and divided into individual semiconductor wafers, the non-adhesive film 4 and the dicing film 5 are stretched to expand the interval between the divided semiconductor wafers. Since the dicing/adhesive tape has a cut Since the crystal film 5 is excellent in expandability, the non-adhesive film 4 and the diced film 5 can be easily stretched. After the non-adhesive film 4 and the diced film 5 are stretched, the semiconductor wafer is bonded to the semiconductor wafer. The non-adhesive film 4 peels off the adhesive film 3, and can be taken out as shown in the figure 〇 The semiconductor wafer 31. Further, as a method of peeling and bonding the film 3 of the semiconductor wafer from the non-adhesive film 4, a method of dicing the film 3 can be exemplified by a plurality of top 4W, and a V-body wafer 21 Inside the 21b side, use method...conductor wafer 21 = or: the method of jacking up with a multi-stage needle or vacuum peeling using the ultrasonic (four) surface side; since it can further prevent the half-turn, ^ ^ The destruction of the Japanese film 31 is therefore preferable. It is preferable that the joint surface of the Japanese yen 21 and the bonding film 3 is substantially in the direction of the father, and the bonding is sticky. In the state of the crystal film 3, the semiconductor wafer 31 is peeled off from the non-station film 4. In the day of the cut/adhesive tape 1, the peeling property of the Weitiantan & viscous day film 3 and the non-adhesive film 4 was obtained.

& two. Therefore, even if it is not possible to reduce the peeling force by light irradiation or the like, the semiconductor wafer can be taken out together with the adhesive film. In other words, in the crystal cutting, the crystal ribbon 1 does not need to be reduced in peeling force by, for example, light irradiation. "Qin Cheng non-adhesive film. Non-adhesive film, preferably, does not reduce the peeling force by light irradiation or the like. In the non-adhesive film, it is possible to reduce the manufacturing efficiency of the semiconductor wafer by reducing the peeling operation by light irradiation or the like without lowering the h4 of the 'li-dissipating force by light irradiation or the like. The term "light irradiation" does not include exposure to natural light, but refers to a situation in which ultraviolet rays or the like are intentionally irradiated. Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to the examples. In the example 丨~^ and the dicing/adhesive tape of the comparative example 丨3, the following adhesive film AD, non-adhesive film L1 to L1 〇, and dicing films DC1 to DC4 are prepared. " (1) Adhesive Crystal film formation 128480.doc •37- 200842957 (Met film A) Formulated with 15 parts by weight of G-2050M (manufactured by Nippon Oil & Fat Co., Ltd., containing epoxy group: fcff acid group molecular polymer, weight average molecular weight Mw 20 million), 80 parts by weight of EXA_720〇hh (big book) Manufactured by Ink Co., Ltd., dicyclopentadiene type epoxy resin), 5 parts by weight of HP-4032D (manufactured by Dainippon Ink Co., Ltd., naphthalene type epoxy resin), 35 parts by weight of ΥΗ-3〇9 (Japanese epoxy resin) The company produced 'an acid anhydride hardener', 8 parts by weight of 2MA〇K_PW (manufactured by Shikoku Chemical Co., Ltd., imidazole), and 2 parts by weight of s320 (manufactured by Chisso Co., Ltd., amino decane) to obtain a mixture. The mixture was added to methyl ethyl ketone (MEK) as a solvent in a manner of 60% solid content, and stirred to obtain a coating liquid. It was coated on a release film at 110 ° C. The oven was heated and dried for 3 minutes, and a 40 μm thick film of the adhesive film A was formed on the release film. (Met film B) 100 parts by weight of G-2050M (manufactured by Nippon Oil Co., Ltd., epoxy group containing epoxy group) High molecular weight polymer, weight average molecular weight Mw is 200,000), 80 parts by weight of ΕΧΑ7200ΗΗ (manufactured by Dainippon Ink Co., Ltd., dipentadiene type epoxy resin), 5 parts by weight of HP-4032D (Daily Ink Company) Manufactured, naphthalene type epoxy resin), 35 parts by weight of γΗ-3〇9 ( An epoxy resin company, an acid anhydride hardener), 8 parts by weight of 2ΜΑ0Κ_pw (manufactured by Shikoku Chemical Co., Ltd., imidazole), and 2 parts by weight of 832〇 (manufactured by Chisso Corporation, amino decane) to obtain a mixture. Then, a mucium film is formed in the same manner as the adhesive film 8. (Met film C) 128480.doc -38- 200842957 7 parts by weight of G-2050M (manufactured by Nippon Oil & Fat Co., Ltd., containing epoxy group C) Dilute acid polymer, weight average molecular weight Mw is 200,000), 88 parts by weight of EXA-7200HH (manufactured by Dainippon Ink Co., Ltd., dicyclopentadiene type epoxy resin), and 5 parts by weight of HP-4032D ( Dainippon Ink Co., Ltd. manufactures 'naphthalene type epoxy resin', 35 parts by weight of γΗ_3〇9 (manufactured by Nippon Epoxy Resin Co., Ltd., anhydride-based hardener), and 8 parts by weight of 2-ΜΑΟΚ-PW (manufactured by Shikoku Chemical Co., Ltd., imidazole) 2 parts by weight of S320 (manufactured by Chisso Corporation) was obtained to obtain a mixture. Then, the die film C is formed in the same manner as the die film A. (Met film D) DF402 manufactured by Hitachi Chemical Co., Ltd. (2) Formation of non-adhesive film First, the following acrylic polymer was synthesized. (Polymer 1) 95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of acrylic acid per ethyl acetate, and 0.2 parts by weight of Irgacure 651 as a photoradical generator (Aba-Jia-Ciba-Ciba- A Geithy company, 50% ethyl acetate solution, and 0.01 part by weight of dodecyl mercaptan were dissolved in ethyl acetate to obtain a solution. The solution was irradiated with ultraviolet rays to carry out polymerization to obtain an ethyl acetate solution of the polymer. Further, 3 to 5 parts by weight of isocyanate 2-methacryloxyethyl ester (manufactured by Showa Denko, Karenz MOI) is reacted with 100 parts by weight of the solid component of the solution to obtain (methyl) An acrylic copolymer (polymer 1) of an acrylic resin crosslinked body. The average molecular weight of the polymer 1 was 700,000 and the acid value was 86.86 (mgK〇H/g). 128480.doc -39- 200842957 (Polymer 2) 94 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of acrylic acid 2_ by weight, 1 part by weight of acrylic acid, 〇·2 parts by weight A photoradical generator 1rgaCUre 651 (manufactured by Ciba-Cargill Corporation, 5% by weight of an acetic acid ester solution), and 0.01 part by weight of dodecanol were dissolved in ethyl acetate to obtain a solution. The solution was irradiated with ultraviolet rays to carry out polymerization to obtain an ethyl acetate solution of the polymer. Furthermore, 3.5 parts by weight of isocyanate 2-methacryloxyethyl ester (manufactured by Showa Denko Co., Ltd., Karenz M〇I) was reacted with respect to 100 parts by weight of the solid component of the solution to obtain Acrylic copolymer (polymer 2) of (meth)acrylic resin crosslinked body. Polymer 2 has a weight average molecular weight of 760,000 and an acid value of 6.73 (mgKOH/g) 〇 (Polymer 3) 97-injury 2-ethylhexyl acrylate and 3 parts by weight of acrylic acid 0.2 parts by weight of Irgacure 651 as a photoradical generator (manufactured by Ciba Jiaji Co., Ltd., 5% by weight of ethyl acetate solution), and 〇〇1 weight of dodecafuryl alcohol 'dissolved in acetic acid B In the ester, a solution is obtained. The solution was irradiated with ultraviolet rays to carry out polymerization to obtain an ethyl acetate solution of the polymer. Further, 1.8 parts by weight of 2-methylpropenyloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., Karenz MOI) was reacted with 100 parts by weight of the solid component of the solution to obtain (methyl group). An acrylic copolymer (polymer 3) of an acrylic resin crosslinked body. The polymer 3 had an average weight molecular weight of 890,000 and an acid value of 0.1 mg KOH/g. (Polymer 4) 128480.doc -40- 200842957,;; hexyl acrylate, 1 part by weight of acrylic acid 2-base vinegar, 0.2 parts by weight of irgacure as a photoradical generator Manufactured by Ba-Jiakey Co., Ltd., 5% by weight of ethyl acetate solution, and 〇〇ι weight = injured dodecanol, dissolved in ethyl acetate to obtain a solution. The six, '',,, and the outer line are polymerized to obtain an ethyl acetate solution of the polymer and further 'with respect to 100 parts by weight of the solid component of the solution, causing 0.9% of the isocyanate 2_A The acryloyloxyethyl ester (manufactured by Showa Denko Co., Ltd., Karenz MOI) was reacted thereto to obtain an acrylic copolymer (polymer 4) which is a (meth)acrylic resin crosslinked body. The weight of the polymer 4 was an average of 730,000 knives and an acid value of 〇34 (mgK〇H/g). (Polymer 5) 95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of acrylic acid 2 to 2 parts by weight of hydrazine, and 2 parts by weight of a photoradical generator. Fat (3) generation 651 (manufactured by KBA-Jacker Co., Ltd., 50% ethyl acetate solution), and 0.01 parts by weight of dodecanol were dissolved in ethyl acetate to obtain a solution. The solution was irradiated with ultraviolet rays to carry out polymerization to obtain an ethyl acetate solution of the polymer. Furthermore, 7 parts by weight of 2-methylpropenyloxyethyl isocyanate (manufactured by Showa Denko, Karenz MOI) was reacted with 1 part by weight of the solid content of the solution, and obtained as ( A copolymer of acrylic acid (polymer 5) of a methylated acrylic resin crosslinked body. The polymer 5 had a weight average molecular weight of 920,000 and an acid value of 1 〇〇 (mgK 〇 H / g). (Non-adhesive films L1 to L7) The polymer of any of the obtained polymers 1 to 5, U-324A (manufactured by Shin-Nakamura Chemical Co., Ltd., ethyl urethane 128480.doc) was blended at a ratio shown in Table 1 below. -41- 200842957 Acrylic oligomer), Irgacure 65 1 (manufactured by Ciba-Jacky) as a photo-radical generator, and SE4050 (manufactured by Admatechs, cerium oxide filler) as a filler It was dissolved in ethyl acetate to obtain a solution. This solution was coated on a release PET (polyethylene terephthalate) film using an applicator. Further, it was dried by heating in an oven of 11 (TC) for 3 minutes to form a film having a thickness of 50 μm. Under a high pressure mercury lamp, the film was irradiated with ultraviolet rays of 365 nm at 1000 mJ. Thus, a crosslinked non-adhesive film L1 was obtained. L7. (non-adhesive film L9)

Polycarbonate film GF-8 (non-adhesive film L10) manufactured by Tamapoly

Polyethylene terephthalate film PET 5011 (3) diced film (cut film DC1) PE tape #631 8-B manufactured by Lintec Co., Ltd. A PE tape containing a rubber-based adhesive layer is formed on one side of the substrate, the thickness of the substrate is 60 μm, and the thickness of the adhesive layer is 10 μm (cut film DC2)

Adwill D650: manufactured by Lintec, a UV-curable dicing tape (cut film DC3) formed on one side of an olefin substrate with an adhesive layer containing an acrylic resin paste.

Elegrip UHP-0805MC: manufactured by Denki Chemical Co., Ltd., UV 128480.doc -42- 200842957 hardened dicing tape formed on one side of an olefin substrate with an adhesive layer containing an acrylic resin paste. The thickness of the substrate layer is 80 μηι, the thickness of the adhesive layer is 5 μηη (cut film DC4) The above-mentioned diced film DC2 (Adwill D650) is photohardened to form a non-adhesive dicing film (Example 1)

On the surface of the film A on the release film, a non-adhesive film L1 was laminated at 6{rc. Next, the non-adhesive film u and the surface i attached to the surface of the die-bonding film a are opposite to each other, and the dicing film DC1 is attached from the agent side. “匕 制作 制作 制作 制作 制作 有 有 有 依 依 依 依 依 依 / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / Or a dicing film, which was replaced with a film shown by the following phantom, and a dicing/t crystal ribbon was produced in the same manner as in Example 1. Further, when affixed, the dicing layer had an adhesive layer. In the case, the dicing film is attached to the non-adhesive film from the side of the adhesive. (Comparative Example 1) On the surface of the smear film A on the release film, the dicing film is sunken. Hardened 'self-adhesive side stickers _

The divalent film DC4 was used as a non-adhesive film and a diced film. A cleavage/adhesive ribbon with a release film/adhesive film and a dicing film (corresponding to a non-adhesive film) is produced. (Comparative Examples 2 to 3) A dicing/adhesive tape was produced in the same manner as in Example 1 except that the non-adhesive film was replaced with the non-adhesive enamel shown in the following, 128480.doc-43-200842957. (Evaluation of dicing/adhesive zone) (1) Storage modulus of the film before storage at 25 ° C. The film of the film before it is hardened by heating, cutting thickness Q 5 mm, width 5 mm And the length of 3 cm, and get the evaluation sample. For the obtained evaluation sample, the storage elastic modulus at 25 ° C was measured under the conditions of 10 Hz • and distortion of 0.1% using dva_200 manufactured by the company. (2) Peel strength of the adhesive film and non-adhesive film • Laminated non-adhesive film at 60 ° C on one side of the die film. Next, on the opposite side of the surface of the adhesive film to which the non-adhesive film is attached, a stainless steel plate is attached, and the adhesive film is bonded to the stainless steel plate to obtain the evaluation sample d, so as to be non-adhesive. The state of the evaluation sample is fixed by peeling at the interface between the film and the die film, at a peeling speed of 300 mm/min, along the interface with respect to the interface between the die film and the non-adhesive film, in the direction of 18 ,, the self-adhesive film Peel off the non-adhesive film. Using the AGS-100D manufactured by Shimadzu Corporation, the force required for peeling at this time was measured by the width of 25 贿, and the average value of the obtained values was taken as the peeling strength. (3) Elongation at break of non-adhesive film 'Using a tensile tester to grasp IS (manufactured by Shima Toki), stretching a non-adhesive film at a thickness of 匪·5 mm×width 5 mmx Length 7 (10)) 'Elongation at break is taken as elongation at break. (4) Surface energy of non-adhesive film The surface energy of the non-adhesive enamel attached to the surface of the morphological film was measured according to the claw K6798 using a wet reagent (manufactured by Nacalai Tes Co., Ltd.). 128480.doc -44- 200842957 (5) Evaluation of the release of the die-cut film of the dicing/adhesive tape when manufacturing the semiconductor wafer, and laminating the exposed film at a temperature of 60 ° C for 8 inches in diameter, An evaluation sample was prepared on one side of the wafer with a thickness of 80 μm. The evaluation sample was cut into a wafer size of 1 〇 mm X 10 mm at a transport speed of 50 mm/sec using a dicing apparatus DFD651 (manufactured by DISCO Corporation). After the dicing, the bonded semiconductor bestein D_02 (manufactured by Canon Machinery Co., Ltd.) was used to continuously pick up the divided semiconductor under the conditions of a chuck size of 8 mm square, a push-up speed of 5 mm/sec, and an expansion of 4 mm. Wafer. As described above, the machinability at the time of cutting and the possibility of picking up were evaluated. Further, after picking up, a total of 2 G sides were formed for every four sides of the five semiconductor wafers picked up, and whether or not the die film was partially defective was observed. Counts the number of edges that do not have a defect along the edge that is greater than 50 cm. Further, the machinability was evaluated according to the following evaluation criteria. [Evaluation criteria for the generation of cutting chips in the shape of a whisker when cutting] 〇: The whisker is almost invisible when cutting. Or, even if there is a whisker, it has no effect on the pick. , A There is a case where whisker chips are generated. X • Shabby cutting chips are visible on a plurality of wafers. The results are shown in Table 1 below. [Evaluation criteria for flying chips during cutting] Ο : No flying pieces are produced. △: A part of the wafer produces a flying piece. 128480.doc -45- 200842957 χ: The flying piece is obvious (a large number of wafers produce flying blades when cutting). [Table 1]

128480.doc 46- 200842957 Comparative Example 3 〇< UQ jn <N Ο rn 1 XX 1 1 Comparative Example 2 3 < UD CN: 沄00 1 <<3 98/100 15/20 Comparative Example 1 DC4 < DC4 jn ο ο νο 〇〇§ 1 43⁄4 2 ο Η 1 I t 1 (N — 1 QQ 1500 <N ο <Ν ro 〇80/80 20/20 Example 12 2 Ο 1 1 1 1 ( N 1 UQ yn o ο <Ν m 〇〇35/100 10/20 Example 11 Ο ^-1 t V 1 1 CN 1 CQ U 〇 inch OO «Ν ο (Ν ΓΟ 〇<1 85/85 20 /20 Example 9 I 1 1 1 ο ψ^4 1 < U 〇jn OO €Ν inch ΟΊ /100/100 20/20 Example 8 » 1 1 Ο 1 <N a 1 < UQ jn VsO m S νη ΓΟ 〇〇 55/100 10/20 Example 7 2 I 1 ο 1 1 < N — 1 < Q 00 mm rr) 〇〇 100/100 20/20 Example 6 3 1 ο f—Η 1 1 1 CN — 1 < UQ οο - 〇〇 85/100 〇 04 〇〇 Example 5 2 ο 1 1 1 1 S — § < U Ο tn inch rsi ON rn 〇〇100/100 20/20 2 ο I 1 Cao 1 (N - 〇 < UQ JO OO t〇rn 〇〇 100/100 20/20 Example 3 ο 1 1 k 1 — 1 < 1 — DC3 j jn fN rn ο (N rn 〇〇100/100 20/20 Embodiment 2 2 ο 1 1 1 1 <N one side < | DC2 I jn <N ro ο (N rn 〇〇100/100 20/20 embodiment 1 2 ο tf 1 1 <N a 1 < jn (N ro ο rsj m 〇〇100/100 20/20 I non-adhesive film type ^ Co money = bond polymer 2 (Mw 76 million acid value 6.73 ) Polymer 3 (Mw 890,000 acid value 0.58) Polymer 4 (Mw73 million acid value 0.34) Polymer 5 (Mw 92 million acid value LOO) U-324A VO ο SE4050 Mut film type Crystal film type Mu Clay film Storage modulus before hardening (25 ° C) (MPa) Peel force of non-adhesive film (N / m) Elongation of non-adhesive film (%) Surface energy of non-adhesive film (N / m ) Production of whisker-like cutting chips during cutting Evaluation of flying blade evaluation during cutting Can pick up the number of pick-ups/pickup 趟1 m ^ ··1 _ *碡 碡 480 128480.doc -47- 200842957 [Simple diagram] BRIEF DESCRIPTION OF THE DRAWINGS Figures 1 a) and (b) show a partially missing front cross-sectional view and a partially missing plan view of a diced/adhesive tape according to an embodiment of the present invention. Fig. 2 is a partially broken front sectional view showing a dicing/adhesive tape according to another embodiment of the present invention. Fig. 3 is a partially broken front sectional view showing a dicing/adhesive tape according to another embodiment of the present invention.

Fig. 4 is a plan view showing a semiconductor wafer used in the manufacture of a semiconductor wafer. Fig. 5 is a view for explaining a method of manufacturing a semiconductor wafer using a dicing/adhesive tape according to an embodiment of the present invention, and is a front cross-sectional view showing a state in which a semiconductor wafer is placed on a stage. Fig. 6 is a view for explaining a method of manufacturing a semiconductor wafer using a dicing/adhesive tape according to an embodiment of the present invention, and is a front cross-sectional view showing a state in which a semiconductor wafer is bonded to an adhesive layer. Figure 7 is a view for explaining a method of manufacturing a semiconductor wafer using a dicing/adhesive tape according to an embodiment of the present invention, and showing a sinuous front cross-sectional view of a plurality of semiconductor wafers bonded to an adhesive layer. . Figure 8 is a view for explaining a method of manufacturing a semiconductor wafer using the sunday/adhesive tape of the embodiment of the present invention, and showing that the adhesive layer attached to the semiconductor wafer is flipped over and carried on another load. The positive side of the state on the stage. Figure 9 is a view for explaining a method of manufacturing a semiconductor device using the dicing/adhesive tape of the present invention, and is not bonded to the layer of I28480.doc -48- 200842957 The semiconductor wafer is diced and partially divided into front side sections of the state of each semiconductor wafer. Figure 349 is a front cross-sectional view showing a semiconductor wafer manufactured using a diced/adhesive tape according to an embodiment of the present invention. [Main component symbol description]

1 dicing tape/adhesive tape 2 release film 2a upper 3 viscous film 3a surface 4 non-adhesive film 4a, 4b surface 5 dicing film 5a substrate 5b adhesive 5c extension 6 > 7 protective sheet 11 dicing /Adhesive tape 15 dicing/adhesive tape 16 Non-adhesive film 16a, 16b Surface 17 First layer 18 Second layer 21 Semiconductor wafer 128480.doc -49- 200842957 21a 21b 21c 22 23 " 24 ^ 31 41 Surface Long face peripheral side stage cutting ring stage semiconductor wafer cutting part

128480.doc -50-

Claims (1)

200842957 X. Patent application scope: The seed dicing/adhesive tape is characterized in that it is used for cutting semiconductor wafers, receiving semiconductor wafers, and users of bonding semiconductor wafers, which have an adhesive film and paste. A non-adhesive film attached to one surface of the above-mentioned die-bonding film, wherein the non-adhesive film contains a (meth)acrylic resin crosslinked body as a main component. 2. The cleavage/adhesive ribbon of claim 1, wherein the non-adhesive film has an elongation at a breaking point in the range of 5 to 1%. 3. The cleavage/adhesive tape of claim 1 or 2, wherein the surface of the non-adhesive film to which the surface of the die film is attached is 4 〇 N/m or less. 4. The cleavage/adhesive tape according to any one of items 1 to 3, wherein the non-adhesive film is attached to the surface of the above-mentioned die film without being subjected to mold release treatment. 5. The cleavage/polycrystalline ribbon according to any one of items 1 to 4, wherein the (meth)acrylic resin crosslinked body comprises (meth) propyl having an alkyl group having a carbon number of 丨~i 8 Dilute acid g polymer. 6. The cleavage/bonding ribbon of claim 5, wherein the (meth) acrylate polymer has an acid value of 2 or less. 7. The cleavage/polycrystalline ribbon of claim 5 or 6, wherein the (mercapto) acrylate polymer is a (meth) acrylate obtained by polymerizing at least one of butyl acrylate and ethyl acrylate. polymer. The cleavage/adhesive tape according to any one of claims 1 to 7, wherein the above-mentioned die film comprises a thermosetting resin composition. 9. The cleavage/adhesive ribbon of claim 8, wherein the storage modulus of the above-mentioned viscous film at 23 ° C before thermal hardening is in the range of from 10 ί 6 to ί ο Pa. 1 〇. = a cleavage/polycrystalline ribbon of claim 8 or 9, wherein the above-mentioned viscous film contains an epoxy resin and a polymer heat-curing agent having a functional group reactive with an epoxy group. Ii ^ ^ 项 M M M M / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / Things. 12. If the cleavage/adhesive zone of any of the above-mentioned non-I-films is on the opposite side to the surface to which the above-mentioned viscous film is attached, a dicing film is attached . 13. A method of fabricating a semiconductor wafer, comprising the steps of: preparing a dicing/bonding ribbon and a semiconductor wafer according to any one of items 1 to 12; bonding the semiconductor wafer to a dicing/ a surface of the adhesive layer opposite to the surface of the above-mentioned non-adhesive film to which the above-mentioned non-adhesive film is attached, and a semiconductor wafer bonded with a dicing/adhesive tape is cut along with the above-mentioned adhesive film, and is divided into individual a semiconductor wafer; and after the dicing, the semiconductor wafer is bonded to the above-mentioned non-adhesive film, and the semiconductor wafer is taken out together with the die-bonding film. The method of manufacturing a semiconductor wafer according to claim 13, wherein in the step of removing the semiconductor wafer after the dicing, the semiconductor wafer is taken out without changing the peeling force between the die film and the non-adhesive film. 128480.doc