TW200832539A - Method and apparatus for etching a substrate - Google Patents
Method and apparatus for etching a substrate Download PDFInfo
- Publication number
- TW200832539A TW200832539A TW97103685A TW97103685A TW200832539A TW 200832539 A TW200832539 A TW 200832539A TW 97103685 A TW97103685 A TW 97103685A TW 97103685 A TW97103685 A TW 97103685A TW 200832539 A TW200832539 A TW 200832539A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- eddy current
- etching
- liquid
- bath
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 193
- 238000005530 etching Methods 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000006227 byproduct Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims description 78
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 150000004673 fluoride salts Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 2
- 230000035922 thirst Effects 0.000 claims 2
- 241000251468 Actinopterygii Species 0.000 claims 1
- WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 2
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 2
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical class F* 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20070009933A KR100855541B1 (ko) | 2007-01-31 | 2007-01-31 | 기판의 식각 방법 및 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200832539A true TW200832539A (en) | 2008-08-01 |
Family
ID=39674233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97103685A TW200832539A (en) | 2007-01-31 | 2008-01-31 | Method and apparatus for etching a substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2010517314A (ko) |
| KR (1) | KR100855541B1 (ko) |
| TW (1) | TW200832539A (ko) |
| WO (1) | WO2008093969A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101047465B1 (ko) * | 2009-10-09 | 2011-07-07 | 한국표준과학연구원 | 경량화가공부를 포함하는 대형광학계의 균일에칭장치 및 그 대형광학계의 균일에칭방법 |
| JP2012046770A (ja) * | 2010-08-24 | 2012-03-08 | Sumitomo Bakelite Co Ltd | 基板の処理装置および基板の処理方法 |
| DE112012006759T5 (de) * | 2012-07-31 | 2015-08-20 | Sanyo Electric Co., Ltd. | Verfahren der Herstellung einer Solarzelle |
| KR101576286B1 (ko) * | 2014-05-30 | 2015-12-10 | 서울시립대학교 산학협력단 | 실리콘 웨이퍼의 이방성 식각 방법 및 그 장치 |
| KR20220039004A (ko) * | 2020-09-21 | 2022-03-29 | 삼성전자주식회사 | 디스플레이를 포함하는 전자 장치 및 그 제조 방법 |
| CN112885712B (zh) * | 2021-01-21 | 2022-04-26 | 长鑫存储技术有限公司 | 晶圆边缘的清洗方法以及清洗装置 |
| WO2023068395A1 (ko) * | 2021-10-19 | 2023-04-27 | 이상로 | 습식식각용액조성물, 및 글래스의 습식식각방법, 및 그 습식식각방법으로 패터닝된 글래스 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59155937A (ja) * | 1983-02-25 | 1984-09-05 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH05144798A (ja) * | 1991-11-22 | 1993-06-11 | Kawasaki Steel Corp | ウエーハのエツチング方法及びエツチング装置 |
| JPH09139373A (ja) * | 1995-11-15 | 1997-05-27 | Canon Inc | エッチング装置 |
| KR20000010825U (ko) * | 1998-11-26 | 2000-06-26 | 윤종용 | 웨이퍼 세정 장치 |
| KR100712472B1 (ko) * | 2000-12-16 | 2007-04-27 | 엘지.필립스 엘시디 주식회사 | 식각장치 및 식각방법 |
| KR100516345B1 (ko) * | 2003-09-18 | 2005-09-22 | (주)울텍 | 습식 식각 장치 |
| KR20060054783A (ko) * | 2004-11-16 | 2006-05-23 | 삼성전자주식회사 | 반도체 소자 제조용 습식 식각 장치 |
-
2007
- 2007-01-31 KR KR20070009933A patent/KR100855541B1/ko not_active IP Right Cessation
-
2008
- 2008-01-28 JP JP2009548148A patent/JP2010517314A/ja active Pending
- 2008-01-28 WO PCT/KR2008/000496 patent/WO2008093969A1/en active Application Filing
- 2008-01-31 TW TW97103685A patent/TW200832539A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR100855541B1 (ko) | 2008-09-01 |
| JP2010517314A (ja) | 2010-05-20 |
| KR20080071708A (ko) | 2008-08-05 |
| WO2008093969A1 (en) | 2008-08-07 |
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