200826213 九、發明說明 【發明所屬之技術領域】 本發明，係有關於除電裝置及除電方法，以及程式記 錄媒體，更詳細而言，係有關於在進行被檢查體之電性特 性檢查時，能夠除去帶電於被檢查體之靜電的影響之除電 裝置及除電方法，以及程式記錄媒體。 【先前技術】 在半導體製造之後續工程中，係有使用檢查裝置而對 被形成有複數之裝置的被檢查體（例如，晶圓）直接作檢 查的方法。此檢查裝置，係具備有：用以將被收容於卡匣 內之晶圓一枚一枚地作搬送之裝載室，和用以對從此裝載 室所接收之晶圓進行電性特性檢查之探針室。 裝載室’係具備有：將晶圓一枚一枚地作搬送之晶圓 搬送機構、和在經由晶圓搬送機構而將晶圓作搬送的期間 中，以晶圓之定向平面或是缺口爲基準而將晶圓之方向對 齊的對位機構（以下，稱爲「副夾具」）。另一方面，： 探針室，係具備有：在載置晶圓並於Χ、Υ、Ζ方向移動 的同時，在0方向進行正反旋轉之載置台（以下，稱爲「 主夾具」）、和被配置在主夾具之上方的探針卡、和進行 探針卡之探針與主夾具上之晶圓間之對位的對位機構。又 ，在探針室之頂板上，係被配置有與探針卡作電性接觸之 測試頭，經由測試頭，在測試器與探針卡之間送收訊特定 之訊號。 -4- 200826213 在進行晶圓之檢查的情況時，於載置室內，晶圓搬送 機構係將卡匣內之晶圓作搬送，並經由副夾具而進行預對 位，而後，晶圓搬送機構係將晶圓載置於探針室內之主夾 具上。在探針室中，當主夾具在X、Y、Z以及0方向移 動的期間中，係經由對位機構來進行晶圓與探針卡的探針 間之對位。而後，主夾具係朝向X、Υ方向移動，並使最 初之裝置位置於探針的正下方，而後，主夾具係在Ζ方向 上升，而使裝置與探針電性接觸，並進行裝置之檢查。在 檢查後，主夾具係下降’而主夾具係進行晶圓之分度輸送 ，而依序進行其他之裝置的檢查。在晶圓之檢查後，係經 由主夾具以及晶圓搬送機構，而將晶圓送回至卡匣內之原 先的位置，並依序進彳了剩餘之晶圓的檢查。 然而，在進行檢查時，由於主夾具之移動時等的與空 氣間之摩擦，在主夾具或晶圓上係會帶電有靜電。此現象 係難以避免，且若是置之不管，則由於靜電之影響，在檢 查中會有對裝置之配線構造造成損傷之虞。特別是，由於 裝置之細微構造化，此種現象係逐漸變爲顯著。於此，本 發明人，係在專利文獻1中，提案有主夾具之除電機構。 於此除電機構中，係在進行晶圓搬送機構與主夾具之間的 晶圓之授受的期間中，對主夾具之靜電作除去。 〔專利文獻1〕日本特開2003-218175號公報 【發明內容】 〔發明所欲解決之課題〕 -5- 200826213 然而，專利文獻1之除電機構，由於在從開始進行一 枚之晶圓的檢查起直到結束爲止之間的晶圓檢查中，係無 法從主夾具來將靜電除去，因此，在對一枚之晶圓進行檢 查的期間中，在晶圓以及主夾具上係會緩慢的累積靜電， 而隨著檢查的進行，在裝置間之檢查結果中會產生差異， 而有使檢查之信賴性降低之虞。特別是，若是如最近一般 ，裝置之配線構造成爲6 5 n m製程以下者，則由於在檢查 時之施加電流係爲極小，因此晶圓之靜電的影響係變爲顯 著，對檢查結果的影響亦變大，而會使信賴性降低，在極 端的情況時，甚至會有使裝置之配線構造損傷之虞。 本發明，係爲用以解決上述課題而進行者，其目的， 係在於提供一種：能消除靜電所造成之影響，就算是對 6 5 nm以下之超細微構造的被檢查體，亦能在提昇被檢查 體之檢查的信賴性的同時，確實地防止裝置之損傷的除電 裝置及除電方法，以及程式記錄媒體。 〔用以解決課題之手段〕 本發明之申請項1所記載之除電裝置，係爲在使被檢 查體之載置台與探針卡作相對性的移動，並使上述載置台 之上述被檢查體與上述探針卡作電性接觸，而進行上述被 檢查體之電性的特性檢查時，經由上述載置台而將上述被 檢查體之靜電除去的除電裝置，其特徵爲，具備有：將上 述載置台接地之接地用配線；和被設置於此接地用配線之 -6 - 200826213 繼電開關（relay switch);和對此繼電開關作開閉控制之 控制器。 又，本發明之申請項2所記載之除電裝置，係在申請 項1所記載之發明中，具備有以下特徵··上述載置台係具 備有成爲上述被檢查體之載置面的頂板，上述接地用配線 ’係被連接於形成在上述頂板上之第1導體膜處。 又，本發明之申請項3所記載之除電裝置，係在申請 項1又或是申請項2所記載之發明中，具備有以下特徵： 上述載置台係經由纜線而被連接於測試頭，上述接地用配 線’係被電性連接於上述纜線之中心導體。 又，本發明之申請項4所記載之除電裝置，係在申請 項2又或是申請項3所記載之發明中，具備有以下特徵： i述纜線之外部導體，係被電性連接於形成在上述頂板之 下面的第2導電膜。 又，本發明之申請項5所記載之除電裝置，係爲在申 雲靑項4所記載之發明中，具備有以下特徵：上述纜線之外 咅P導體’係經由配線而被連接於上述繼電開關之收納盒。 又’本發明之申請項5所記載之除電裝置，係爲在申 請項1〜5中之任一項所記載之發明中，具備有以下特徵 :上述繼電開關，係構成爲可手動操作。 又’本發明之申請項7所記載之除電方法，係爲在使 被檢查體之載置台與探針卡作相對性的移動，並使被載置 於上述載置台上之上述被檢查體與上述探針卡作電性接觸 ’而進行上述被檢查體之電性的特性檢查時，使用被設置 -7 - 200826213 於上述載置台之接地用配線處的繼電開關，而將上述被檢 查體之靜電除去的方法，其特徵爲，具備有··當上述被檢 查體與上述探針卡未電性接觸時，藉由關閉上述繼電開關 ’而將上述載置台接地，並將上述被檢查體之靜電除去的 第1工程；和當上述被檢查體與上述探針卡電性接觸時， 藉由開啓上述繼電開關，而解除上述載置台之接地的第2 工程。 又’本發明之申請項8所記載之除電方法，係爲在申 請項7所記載之發明中，具備有以下特徵：上述第1工程 ，係爲將上述探針卡與上述載置台作相對性移動之工程。 又’本發明之申請項9所記載之除電方法，係爲在如 申請項7所記載之發明中，具備有以下特徵：上述第1工 程’係包含有：將上述被檢查體載置於上述載置台上之工 程；和將上述被檢查體與上述探針卡作對位之工程。 又’本發明之申請項1 〇所記載之除電方法，係爲在 申請項7所記載之發明中，具備有以下特徵：上述第1工 程，係包含有將上述被檢查體從上述載置台上除去之工程 〇 又，本發明之申請項11所記載之除電方法，係爲在 申請項7所記載之發明中，具備有以下特徵··上述第2工 程，係包含有將上述載置台過傳動（overdrive )之工程。 又，本發明之申請項1 2所記載之程式記錄媒體，係 記錄有：驅動電腦，而實行在使被檢查體之載置台與探針 卡作相對性的移動，並使被載置於上述載置台上之上述被 -8- 200826213 檢查體與上述探針卡作電性接觸，而進行上述被檢查體之 電性的特性檢查時，使用被設置於上述載置台之接地用配 線處的繼電開關，而將上述被檢查體之靜電除去的方法之 程式，其特徵爲，係實行：當上述被檢查體與上述探針卡 未電性接觸時，藉由關閉上述繼電開關，而將上述載置台 接地，並將上述被檢查體之靜電除去的第1工程；和當上 述被檢查體與上述探針卡電性接觸時，藉由開啓上述繼電 開關，而解除上述載置台之接地的第2工程。 〔發明效果〕 若藉由本發明，則能夠提供一種：能消除靜電所造成 之影響，就算是對65nm以下之超細微構造的被檢查體， 亦能在提昇被檢查體之檢查的信賴性的同時，確實地防止 裝置之損傷的除電裝置及除電方法，以及程式記錄媒體。 【實施方式】 以下，根據圖1〜圖4所示之實施形態，對本發明作 說明。另外，在各圖中，圖1係爲將適用有本發明之除電 裝置的其中一種實施形態之檢查裝置的構造之其中一例作 部分之剖斷而展示的正面圖，圖2係爲展示於圖1所示之 檢查裝置的頂板之剖面圖，圖3係爲展示於圖1所示之除 電裝置的區塊圖，圖4之（a )〜（c )係分別爲展示晶圓 之除電方法的時序圖。 具備有本實施形態之除電裝置的檢查裝置i 〇，例如 -9- 200826213 ，係如圖1所示，具備有裝載室1 1以及探針室1 2，並在 控制器（未圖示）之控制下’來進行晶圓W之電性特性 檢查。 裝載室11，係如圖11所示，具備有：將複數之晶圓 W作收容之收容部（未圖示）’和將晶圓W搬入搬出至 收容部之晶圓搬送機構（未圖示），和進行晶圓W之預 對位的副夾具（未圖示）。在裝載室1 1內，當晶圓搬送 機構進行晶圓w之搬送時’係於副夾具處進行預對位， 而後在其與探針室1 2之間進行晶圓W之授受。 探針室12，係如圖1所示，具備有：載置晶圓並於 水平方向以及上下方向移動的載置台14 (以下，稱爲「主 夾具」）、和被配置在此主夾具1 4之上方的探針卡1 5、 和進行此探針卡1 5之複數的探針1 5 A與主夾具1 4上之晶 圓W間之對位的對位機構（未圖示）。在探針室1 2內， 係在經由對位機構而進行主夾具1 4上之晶圓W與探針卡 15之複數的探針15A間之對位後，使複數之探針15A與 晶圓W電性接觸，而進行晶圓w之電性檢查。在進彳了晶 圓W之電性特性檢查時，係經由被配置於探針卡1 5之上 面的測試頭T，而在測試器（未圖示）與探針卡1 5之間 送收訊特定之訊號。另外，探針卡1 5，係被固定於頭頂板 (headplate) 16 之開 口部。 主夾具14，係如圖1所示，例如具備有可將晶圓W 真空吸著之頂板14A、和使頂板14A升降之升降機構14B ，並被構成爲在經由XY平台17而在水平方向移動的同 -10- 200826213 時，使頂板1 4 A升降。頂板14 A，係如例如圖2中所模式 展示一般，爲經由陶瓷等之絕緣基板而形成，並在於其上 面形成有第1導體膜14C的同時，於其下面形成有第2導 體膜14D。第1、第2導體膜14C、14D，例如係藉由金之 薄膜而形成。 又，如圖1所示，在頂板14 A上，係經由纜線1 8而 被電性連接有作爲測定用而被使用之測試頭T。纜線1 8， 例如係如圖3所示，具備有：成爲測定電壓、測定電流之 傳送路徑的中心導體1 8 A ;和隔著絕緣材而將中心導體 1 8 A作被覆之第1外部導體（例如網狀之第1遮蔽導體） 18B ;和隔著絕緣材而將第1遮蔽導體18B作被覆之第2 外部導體（例如網狀之第2遮蔽導體）1 8C，並在經由第 1連接器1 9 A而電性連接於測試頭T的同時，經由第2連 接器1 9B而電性連接於頂板1 4A側。 而後，如圖1〜圖3所示，纜線1 8之中心導體1 8 A， 係對頂板14A之第1導體膜14C作電性連接，第1遮蔽導 體18B，係對頂板14A之第2導體膜14D作電性連接。又 ’纜線18之第2遮蔽導體18C，係如圖3所示一般而被 接地。故而，測試頭T，係被構成爲：當探針卡1 5與晶 圓W電性接觸時，經由探針卡1 5而對晶圓W送訊檢查訊 號，同時，亦經由纜線1 8之中心導體1 8 A，而對頂板 1 4 A上面之第1導體膜1 4 C送訊檢查訊號，而進行對晶圓 W之電性特性檢查。 而，本實施形態之除電裝置2 0，係如圖1、圖3所示 -11 - 200826213 一般，具備有：其兩端分別連接於纜線1 8之中心導體 1 8A和地線2 1的接地用配線22 ;和被設置於接地用配線 22之圖中的繼電開關23 ;和被設置於地線2 1與繼電開關 23之間的接地電阻24 ;和支持繼電開關23以及接地電阻 24的支持基板25 ;和對繼電開關23作開閉控制之開關控 制器26 ;和將除了開關控制器26以外之構件作收容的殼 體27，並構成爲：在實行對晶圓W之檢查時，於開關控 制器26之控制下，規則地對繼電開關23進行開閉控制， 而將帶電於頂板1 4之靜電除去。此除電裝置20，係如圖 1所示一般，經由殼體27而被裝著於頭頂板1 6之上。 繼電開關23，係如圖3所示，具備有：線圈23A、和 在線圏23A內沿著軸心而配置之開關23B、和收容線圈 23A之箱體23C，並根據從開關控制器26而來之訊號而動 作。又，線圈23係經由配線23D，而被電性連接於控制 器纜線28。控制器纜線28係經由I/O瑋28A，而被電性 連接於開關控制器26。又，開關23B之其中一端，係被 電性連接於接地用配線2 1，當基於從開關控制器26而來 之訊號而使線圈23A被施力時，纜線18之中心導體18A 與地線2 1係電性連接，而當線圈23 A之施力解除時，中 心導體1 8 A與地線間之電性連接係被解除。纜線1 8之第 1遮蔽導體18B，由於係經由配線22A而被延長至開關 23B之近旁，並與箱體23C電性連接，因此，藉由將開關 23B與箱體23C設爲略成等電位，能夠對從接地用配線22 或是開關23B而來之漏洩電流或是電性的雜訊作抑制。進 -12- 200826213 而，纜線1 8之第1遮蔽導體1 8B，由於係與頂板14下面 之第2導體膜1 8D電性連接，因此在第2導體膜14D，亦 可施加與第1導體膜14C略爲相同之電壓。藉由此’能夠 抑制從第1導體膜1 4C而來之漏洩電流，而提昇裝置之測 定精確度。 開關控制器26，係作爲由電腦而成之控制器的一部 份而被構成。開關控制器26，係經由記錄有用以實行本發 明之除電方法的程式之記錄媒體，而被儲存在控制器中。 又，在除電裝置20之殻體27中，係被裝著有按鍵開 關29，藉由作業員對按鍵開關29進行押壓操作，而對繼 電開關23施力，並成爲能夠進行除電。此按鍵開關29， 係如圖3所示一般，經由二極體29A而被電性連接於線圈 23A之配線23D。按鍵開關29，在進行晶圓W之檢查時 係並不作使用，而成爲在例如維修時來作使用。 接下來，一面參考圖4之（a)〜（c)，一面針對使 用有除電裝置20之本發明的除電方法之其中一種實施形 態作說明。本發明之除電方法，其程式係如上述一般，經 由記錄媒體，而在控制器中作爲開關控制器2 6來儲存。 在進行晶圓W之檢查的情況時，於載置室Π內，晶 圓搬送機構係將晶圓W從收容部搬出，並在副夾具處進 行預對位，而後，將晶圓W載置（l〇ad )於在探針室12 內待機之主夾具1 4上。在晶圓W從收容部而被載置於主 夾具14之頂板14 A上爲止的期間中，係如圖4 ( a )所示 一般，啓動開關控制器2 6，而對繼電開關2 3施力。藉由 -13- 200826213 對繼電開關23之施力，開關23B係關閉，頂板14A之第 1導體膜14C係經由纜線18之中心導體18A以及接地用 配線22而被接地。藉由此，將帶電於晶圓 W以及頂板 14A上之靜電，經由頂板14A而除去。 若是晶圓搬送機構將晶圓W載置於頂板1 4 A上，則 在將晶圓W真空吸著於頂板1 4 A上之後，主夾具1 4係在 水平方向移動。於此期間中，主夾具1 4係與對位機構協 同動作，而進行晶圓W與探針卡1 5的探針1 5 A之間之對 位。於此期間中，靜電雖會帶電於晶圓W以及頂板1 4 A 之上，但是，由於頂板1 4 A係被接地，因此在直到晶圓W 與探針15A相接觸爲止的期間中，晶圓W以及頂板14A 之靜電係經由頂板1 4 A而被除去，故而，於晶圓W上係 並不會帶電靜電。在晶圓W之對位後，晶圓W內之最初 的裝置係位置於探針1 5 A的正下方，在此位置下，驅動主 夾具1 4之升降機構1 4B，而使晶圓W上升，並使裝置與 探針1 5 A相接觸。與此接觸同時地，開關控制器26係動 作，而消除對繼電開關23之施力，而使開關23B開啓， 解除頂板1 4 A之接地，而中斷對晶圓W以及頂板1 4 A之 除電。 在裝置與探針15A之接觸後，經由主夾具14之升降 機構14B，而將晶圓 W過傳動（overdrive)，使晶圓 W 與探針1 5 A電性接觸，並從測試器來經由測試頭T而對探 針卡1 5送訊檢查用訊號，同時，從測試頭T來經由纜線 18之中心導體18A而亦對頂板14A之上面的第1導體膜 -14 - 200826213 1 4C施加作爲檢查用訊號的電壓，以進行裝置之電性特性 檢查。 此時，在頂板14A之下面的第2導體膜14D，係亦被 施加有與第1導體膜14C略爲相同之電壓。藉由此，能夠 抑制從第1導體膜1 4C而來之漏洩電流，而提昇裝置之測 定精確度。又，頂板14之下面的第2導體膜14D，由於 係經由纜線1 8之第1遮蔽導體18B以及配線22A，而與 箱體23 C電性連接，因此，能夠將被設置於接地用配線 22處之開關23B與箱體23C設爲略成等電位，而能夠對 從接地配線22或是開關23B而來之漏洩電流或是電性的 雜訊作抑制。 若是結束了對最初之裝置的檢查，則頂板1 4 A係經由 升降機構14B而下降，並解除裝置與探針15A之接觸。與 此下降動作同時地，根據從開關控制器26而來之指令訊 號，繼電開關23係動作，將開關23B關閉，而將頂板14 之第1導體膜14 C接地，並如圖4 ( b )所示一般，將在 檢查中而帶電於晶圓W以及頂板1 4 A之靜電，經由頂板 14A而除去。而後，主夾具14係在X方向又或是γ方向 移動，而將晶圓W作分度輸送，在下一個裝置到達了探 針15A之正下方後，頂板14A係經由升降機構14B而上 升，並使裝置與探針1 5 A電性接觸。將從頂板丨4 A之下 降動作起直到接觸動作爲止的期間中，帶電於晶圓W以 及頂板14A上之靜電，經由頂板14A而除去。與裝置和 探針1 5 A之接觸同時地，根據從開關控制器26而來之指 -15- 200826213 令，繼電開關23係動作，而使開關23B開啓，並中斷從 頂板1 4 A所進行之除電。在此狀態下，從測試頭T經由探 針1 5 A而送訊檢查用訊號，並反覆進行上述之裝置的電性 特性檢查。 若是晶圓W內之最後的裝置之檢查結束，則頂板1 4 A 係下降。與此下降動作同時地，根據從開關控制器26而 來之指令訊號，而關閉繼電開關23之開關23B，而進行 對晶圓W以及頂板14 A之除電（參考圖4 ( c ))。而後 ，爲了接收完成檢查之晶圓W，主夾具1 4係移動至裝載 室1 1側，在裝載室1 1內待機之晶圓搬送機構，係將主夾 具1 4上之晶圓W卸載。在將晶圓W卸載後，晶圓搬送機 構係將完成檢查之晶圓 W送回至收容部，而後，將下一 個晶圓W從收容部搬出。進而，晶圓搬送機構係將藉由 副夾具而進行了預對位之晶圓W，轉交至在探針室1 2內 待機之主夾具1 4。在將晶圓W載置於主夾具1 4上之後， 反覆進行上述之動作，而進行晶圓W之檢查，同時，當 晶圓W與探針1 5 A爲非接觸時，進行晶圓W以及頂板 14A之除電。另外，亦可使用具備有上下2個之臂的晶圓 搬送機構，並在藉由其中一方之臂而從收容部中將晶圓W 搬出，並進行預對位，而使完成檢查之晶圓W待機，當 完成檢查之晶圓 W到達了晶圓搬送機構的時間點時，藉 由另外一方之臂來將晶圓W卸載，而後，再藉由其中一 方之臂來進行裝載亦可。 如上述所示，除了晶圓W與探針1 5 A相接觸的時間 -16- 200826213 以外，由於係將晶圓w以及頂板14 A之靜電， 1 4 A而除去，因此，靜電帶電於晶圓W上之機會 ，而從最初之裝置起直到最後之裝置爲止，能夠 爲相同之少量的電荷量，因此，從檢查之最初起 爲止，裝置間之檢查結果係不會有偏差，而能夠 性高之檢查。又，由於在晶圓W上之電荷量係 此在檢查中不會有使裝置損傷之虞。 如以上所說明一般，若是藉由本實施形態， 置20，係具備有將主夾具1 4接地之接地用配線 設置於此接地用配線22之繼電開關23 ;和對此 23進行開閉控制之開關控制器26，且能夠實行 W與探針1 5 A並未電性接觸時，藉由將繼電開圈 ，而使主夾具1 4之頂板1 4 A接地，並除去晶圓 板1 4 A之靜電的工程；和當晶圓W與探針1 5 A 時，藉由將繼電開關23開啓，而解除頂板1 4A 工程，因此，在晶圓W之檢查中，於晶圓W係 積蓄有靜電，就算是在6 5 nm製程以下之超細微 圓W，亦能在提昇檢查之信賴性的同時，確實地 之配線構造的損傷。 又，若藉由本實施形態，則主夾具14 A係 1 8而被連接於測試頭T，接地用配線22，係被 於纜線1 8之中心導體1 8 A，因此，可以將纜線 導體1 8 A作爲除電裝置20之接地用配線而利用£ 進而，若藉由本實施形態，則纜線1 8之第 經由頂板 係爲極少 維持在略 直到最後 進行信賴 爲少’因 則除電裝 22 ;和被 繼電開關 =當晶圓 S 2 3關閉 W以及頂 電性接觸 之接地的 幾乎不會 構造的晶 防止裝置 經由纜線 電性連接 1 8之中心 ) 1遮蔽導 -17- 200826213 體18B，由於係經由配線22A而被電性連接於繼電開關23 之收容箱體23C，因此，藉由將開關23B與箱體23C設爲 略成等電位，能夠對從接地用配線22或是開關23B而來 之漏洩電流或是電性的雜訊作抑制。又’纜線1 8之第1 遮蔽導體18B，由於係與頂板14A下面之第2導體膜14D 電性連接，因此在第2導體膜14D，亦可施加與第1導體 膜1 4C略爲相同之電壓，藉由此，能夠抑制從第1導體膜 1 4C而來之漏洩電流，而提昇裝置之測定精確度。又，繼 電開關23，由於係連接於按鍵開關29，而被構成爲可手 動操作，因此，當在檢查時發生有靜電所致之異常的情況 等時，係可藉由對按鍵開關2 9之操作，而緊急避難性的 將晶圓W之靜電除去。 另外，在上述實施形態中，雖係針對相對於探針卡而 使主夾具（載置台）移動之檢查裝置作了說明，但是，亦 可爲相對於載置台而使探針卡移動之檢查裝置。又，在上 述實施形態中，雖係針對適用於對晶圓W作檢查之檢查 裝置中的除電裝置作了說明，但是，本發明，係亦可適用 於晶圓以外之檢查裝置。 〔產業上之利用可能性〕 本發明’係可合適地利用於半導體製造領域之檢查裝 置中。 【圖式簡單說明】 -18- 200826213 〔圖1〕將適用有本發明之除電裝置的其中一種實施 形態之檢查裝置的構造之其中一例作部分截斷而展示的正 面圖。 〔圖2〕展示圖1所示之檢查裝置的頂板之剖面圖。 〔圖3〕展示圖1所示之除電裝置的區塊圖。 〔圖4〕 （ a )〜（c )係分別爲展示晶圓之除電方法 的時序圖。 【主要元件符號說明】 1 〇 :檢查裝置 14 :主夾具（載置台） 14A :頂板 14C :第1導體膜 14D :第2導體膜 1 5 :探針卡 1 5 A :探針 1 8 :纜線 20 :除電裝置 22 :接地用配線 23 :繼電開關 23 :箱體 26 :開關控制器 W :晶圓 -19-200826213 IX. The present invention relates to a static elimination device and a static elimination method, and a program recording medium, and more particularly to a method for performing electrical property inspection of an object to be inspected. A static elimination device and a static elimination method that remove the influence of static electricity charged on the object to be inspected, and a program recording medium. [Prior Art] In the subsequent work of semiconductor manufacturing, there is a method of directly inspecting a test object (e.g., a wafer) on which a plurality of devices are formed using an inspection device. The inspection apparatus includes a loading chamber for transporting the wafers accommodated in the cassettes one by one, and a method for performing electrical property inspection on the wafers received from the loading chamber. Needle room. The loading chamber is provided with a wafer transfer mechanism that transports the wafers one by one, and a wafer in which the wafers are transported by the wafer transfer mechanism. A registration mechanism that aligns the directions of the wafers (hereinafter referred to as "sub-clamps"). On the other hand, the probe chamber is provided with a mounting table that rotates in the direction of Χ, Υ, and 载 in the direction of the Χ, Υ, and ,, and rotates in the zero direction (hereinafter referred to as "main jig") And a probe card disposed above the main jig and a registration mechanism for aligning the probe between the probe card and the wafer on the main jig. Moreover, on the top plate of the probe chamber, a test head electrically connected to the probe card is disposed, and a specific signal is transmitted between the tester and the probe card via the test head. -4- 200826213 In the case of wafer inspection, in the mounting chamber, the wafer transfer mechanism transports the wafer in the cassette and performs pre-alignment via the sub-clamp, and then the wafer transfer mechanism The wafer is placed on the main fixture in the probe chamber. In the probe chamber, during the movement of the main jig in the X, Y, Z, and 0 directions, the alignment between the wafer and the probe of the probe card is performed via the alignment mechanism. Then, the main fixture moves in the X and Υ directions, and the initial device is positioned directly below the probe, and then the main fixture rises in the Ζ direction, and the device is in electrical contact with the probe, and the device is inspected. . After the inspection, the main fixture is lowered and the main fixture performs the indexing of the wafer, and the other devices are inspected in sequence. After the inspection of the wafer, the wafer is returned to the original position in the cassette by the main fixture and the wafer transfer mechanism, and the inspection of the remaining wafers is sequentially performed. However, when the inspection is performed, static electricity is charged on the main jig or the wafer due to friction with the air during the movement of the main jig. This phenomenon is difficult to avoid, and if it is left alone, it may cause damage to the wiring structure of the device due to the influence of static electricity. In particular, this phenomenon has gradually become significant due to the fine structure of the device. Here, the inventors of the present invention proposed a power removal mechanism of a main jig in Patent Document 1. In this static elimination mechanism, the static electricity of the main jig is removed during the transfer of the wafer between the wafer transfer mechanism and the main jig. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-218175 [Claim of the Invention] [Problems to be Solved by the Invention] -5-200826213 However, the static elimination mechanism of Patent Document 1 is inspected from the beginning of one wafer. In the wafer inspection from the beginning to the end, it is impossible to remove static electricity from the main jig. Therefore, during the inspection of one wafer, static electricity is slowly accumulated on the wafer and the main jig. As the inspection progresses, there is a difference in the inspection results between the devices, and there is a fear that the reliability of the inspection is lowered. In particular, if the wiring structure of the device is less than or equal to the 65 nm process as in the recent past, since the applied current during the inspection is extremely small, the influence of static electricity on the wafer is remarkable, and the influence on the inspection result is also significant. When the size is increased, the reliability is lowered, and in an extreme case, there is a possibility that the wiring structure of the device is damaged. The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide an object capable of eliminating the influence of static electricity, and even for an ultra-fine structure of an object having a thickness of 65 nm or less, it can be improved. A static elimination device and a static elimination method for reliably preventing damage to the device, and a program recording medium, while ensuring the reliability of the inspection of the object to be inspected. [Means for Solving the Problems] The static eliminator according to the first aspect of the present invention is configured such that the mounting table of the test object moves relative to the probe card, and the object to be inspected on the mounting table When the electrical property of the test object is in electrical contact with the probe card, the static electricity removing device that removes the static electricity of the test object through the mounting table is characterized in that: The grounding wiring for the grounding of the mounting table; and the relay switch that is provided for the grounding wiring -6 - 200826213; and the controller for controlling the opening and closing of the relay switch. According to the invention of the first aspect of the invention, the device according to the first aspect of the invention includes the following feature: the mounting table includes a top plate that serves as a mounting surface of the object to be inspected, The grounding wiring ' is connected to the first conductor film formed on the top plate. In addition, the power supply device according to the invention of claim 1 or 2, wherein the mounting table is connected to the test head via a cable, The grounding wiring ' is electrically connected to the center conductor of the cable. In addition, in the invention described in claim 2 or the invention of claim 3, the power-removing device according to the invention has the following features: The outer conductor of the cable is electrically connected to A second conductive film formed on the lower surface of the top plate. According to the invention of the invention of the present invention, in the power supply device of the present invention, the 咅P-conductor is connected to the above-mentioned cable via the wiring. The storage box of the relay switch. In the invention according to any one of claims 1 to 5, the power-removal device according to any one of claims 1 to 5 is characterized in that the relay switch is configured to be manually operable. Further, the method of removing electricity according to the seventh aspect of the present invention is to move the mounting table of the test object and the probe card in a relative manner, and to mount the object to be inspected on the mounting table. When the probe card is electrically contacted to perform the electrical property inspection of the object to be inspected, the test object is placed using a relay switch provided at the grounding wiring of the mounting table at -7 - 200826213. The method of removing static electricity is characterized in that, when the object to be inspected is not in electrical contact with the probe card, the mounting table is grounded by closing the relay switch ', and the above-mentioned inspection is performed. The first work of removing the static electricity of the body; and the second process of releasing the ground of the mounting table by opening the relay switch when the test object is in electrical contact with the probe. In the invention according to the seventh aspect of the invention, the first aspect of the invention is characterized in that the probe card is opposite to the mounting table. Mobile engineering. In the invention according to the seventh aspect of the invention, the first aspect of the invention includes the method of placing the object to be inspected on the The work on the stage; and the work of aligning the object to be inspected with the probe card. In the invention according to the seventh aspect of the invention, the first aspect of the invention includes the method of removing the object to be inspected from the mounting table. In addition, the power supply method according to the application of the invention of the seventh aspect of the invention includes the following features: the second project includes the above-described mounting stage (overdrive) works. Further, in the program recording medium described in claim 12 of the present invention, the drive computer is mounted, and the mounting table of the object to be inspected is moved relative to the probe card, and is placed on the above-mentioned The above-mentioned -8-200826213 test body on the mounting table is electrically contacted with the probe card, and when the electrical property of the test object is inspected, the grounding wiring provided on the mounting table is used. A method of removing a static electricity of the object to be inspected by an electric switch, wherein the method is such that when the object to be inspected is not in electrical contact with the probe card, the relay switch is turned off When the mounting table is grounded and the static electricity of the object to be inspected is removed, and when the object to be inspected is in electrical contact with the probe card, the grounding of the mounting table is cancelled by opening the relay switch. The second project. [Effect of the Invention] According to the present invention, it is possible to eliminate the influence of static electricity, and it is possible to improve the reliability of inspection of an object to be inspected even when the object to be inspected is ultra-fine structure of 65 nm or less. A static elimination device and a static elimination method that reliably prevent damage to the device, and a program recording medium. [Embodiment] Hereinafter, the present invention will be described based on the embodiments shown in Figs. 1 to 4 . In the drawings, Fig. 1 is a front view showing an example of a structure of an inspection apparatus to which one embodiment of the static elimination device of the present invention is applied, and Fig. 2 is a view showing the same. 1 is a cross-sectional view of the top plate of the inspection apparatus shown in FIG. 1, FIG. 3 is a block diagram of the static elimination device shown in FIG. 1, and (a) to (c) of FIG. 4 are respectively showing a method of removing electricity from the wafer. Timing diagram. An inspection apparatus i 具备 having the static eliminator according to the present embodiment, for example, -9-200826213, as shown in FIG. 1, includes a loading chamber 1 1 and a probe chamber 1 2, and is provided by a controller (not shown). Under control, the electrical characteristics of the wafer W are checked. As shown in FIG. 11, the loading chamber 11 includes a accommodating portion (not shown) for accommodating a plurality of wafers W, and a wafer transfer mechanism for carrying the wafer W into and out of the accommodating portion (not shown). And a sub-clamp (not shown) for pre-alignment of the wafer W. In the loading chamber 1 1 , when the wafer transfer mechanism transfers the wafer w, the sub-clamp is pre-aligned, and then the wafer W is transferred between the probe chamber and the probe chamber 12. As shown in FIG. 1, the probe chamber 12 includes a mounting table 14 (hereinafter referred to as a "main jig") that moves a wafer in a horizontal direction and a vertical direction, and is disposed in the main jig 1 A probe card 15 at the top of the 4, and a registration mechanism (not shown) for aligning the probe 15A with the plurality of probe cards 15 and the wafer W on the master jig 14. In the probe chamber 12, after the alignment between the wafer W on the master jig 14 and the probe 15A of the probe card 15 via the alignment mechanism, the plurality of probes 15A and the crystal are made. The wire W is electrically contacted, and the electrical inspection of the wafer w is performed. When the electrical property inspection of the wafer W is performed, it is sent between the tester (not shown) and the probe card 15 via the test head T disposed on the probe card 15 above. The specific signal. Further, the probe card 15 is fixed to the opening of the head plate 16. As shown in FIG. 1, the main jig 14 includes, for example, a top plate 14A that can vacuum the wafer W and an elevating mechanism 14B that lifts and lowers the top plate 14A, and is configured to move in the horizontal direction via the XY stage 17. The same as -10- 200826213, make the top plate 1 4 A lift. The top plate 14A is formed by an insulating substrate such as ceramics, as shown in Fig. 2, and has a first conductor film 14C formed thereon and a second conductor film 14D formed on the lower surface thereof. The first and second conductor films 14C and 14D are formed, for example, of a gold film. Further, as shown in Fig. 1, a test head T used for measurement is electrically connected to the top plate 14A via a cable 18. As shown in FIG. 3, for example, the cable 18 is provided with a center conductor 18A which is a measurement voltage and a measurement path for measuring current, and a first external layer which covers the center conductor 18A via an insulating material. a conductor (for example, a mesh-shaped first shield conductor) 18B; and a second outer conductor (for example, a mesh-shaped second shield conductor) 1 8C that covers the first shield conductor 18B via an insulating material, and passes through the first The connector 19A is electrically connected to the test head T, and is electrically connected to the top plate 14A side via the second connector 19B. Then, as shown in FIG. 1 to FIG. 3, the center conductor 18 A of the cable 18 is electrically connected to the first conductor film 14C of the top plate 14A, and the first shielding conductor 18B is the second of the top plate 14A. The conductor film 14D is electrically connected. Further, the second shielding conductor 18C of the cable 18 is generally grounded as shown in Fig. 3 . Therefore, the test head T is configured to send a check signal to the wafer W via the probe card 15 when the probe card 15 is in electrical contact with the wafer W, and also via the cable 18 The center conductor 18 A is sent to the first conductor film 14 C on the top plate 14 A to inspect the signal, and the electrical characteristics of the wafer W are inspected. In addition, the static eliminating device 20 of the present embodiment is generally connected to the center conductor 18A and the ground line 2 of the cable 18, as shown in Figs. 1 and 3, as shown in Figs. 1 and 3, respectively. The grounding wiring 22; and the relay switch 23 provided in the diagram of the grounding wiring 22; and the grounding resistor 24 disposed between the grounding line 21 and the relay switch 23; and the supporting relay switch 23 and the grounding a support substrate 25 of the resistor 24; a switch controller 26 for controlling the opening and closing of the relay switch 23; and a housing 27 for accommodating components other than the switch controller 26, and configured to perform the wafer W At the time of inspection, under the control of the switch controller 26, the relay switch 23 is regularly opened and closed, and the static electricity charged to the top plate 14 is removed. The static eliminating device 20 is mounted on the head top plate 16 via the casing 27 as shown in Fig. 1 . As shown in FIG. 3, the relay switch 23 includes a coil 23A, a switch 23B disposed along the axial center in the line 圏 23A, and a case 23C accommodating the coil 23A, and according to the slave switch controller 26 Acting with the signal. Further, the coil 23 is electrically connected to the controller cable 28 via the wiring 23D. Controller cable 28 is electrically coupled to switch controller 26 via I/O port 28A. Further, one end of the switch 23B is electrically connected to the ground wiring 2, and when the coil 23A is biased based on the signal from the switch controller 26, the center conductor 18A of the cable 18 and the ground line The 2 1 is electrically connected, and when the biasing force of the coil 23 A is released, the electrical connection between the center conductor 18 A and the ground is released. The first shielding conductor 18B of the cable 18 is extended to the vicinity of the switch 23B via the wiring 22A, and is electrically connected to the casing 23C. Therefore, the switch 23B and the casing 23C are slightly set. The potential can suppress leakage current or electrical noise from the ground wiring 22 or the switch 23B. -12-200826213, the first shielding conductor 18B of the cable 18 is electrically connected to the second conductor film 18D on the lower surface of the top plate 14, so that the second conductor film 14D can be applied to the first conductor film 14D. The conductor film 14C has a slightly the same voltage. Thereby, the leakage current from the first conductor film 14C can be suppressed, and the measurement accuracy of the device can be improved. The switch controller 26 is constructed as a part of a controller made of a computer. The switch controller 26 is stored in the controller via a recording medium recording a program for carrying out the power-removing method of the present invention. Further, in the casing 27 of the static eliminator 20, the push switch 29 is mounted, and the operator presses the push switch 29 to apply force to the relay switch 23, thereby enabling the static elimination. The push switch 29 is electrically connected to the wiring 23D of the coil 23A via the diode 29A as shown in Fig. 3 . The push button switch 29 is not used when the wafer W is inspected, and is used for, for example, maintenance. Next, a description will be given of one of the embodiments of the static elimination method of the present invention using the static eliminating device 20, with reference to (a) to (c) of Fig. 4 . In the static elimination method of the present invention, the program is stored as a switch controller 26 in the controller via the recording medium as described above. In the case of performing the inspection of the wafer W, in the mounting chamber, the wafer transfer mechanism carries the wafer W out of the accommodating portion, performs pre-alignment at the sub-clamp, and then mounts the wafer W. (l〇ad) is placed on the main jig 1 4 that is in standby in the probe chamber 12. During the period in which the wafer W is placed on the top plate 14 A of the main jig 14 from the accommodating portion, as shown in FIG. 4( a ), the switch controller 2 6 is activated, and the relay switch 2 3 is activated. Force. By the biasing of the relay switch 23 by -13-200826213, the switch 23B is closed, and the first conductor film 14C of the top plate 14A is grounded via the center conductor 18A of the cable 18 and the grounding wiring 22. Thereby, the static electricity charged on the wafer W and the top plate 14A is removed via the top plate 14A. When the wafer transfer mechanism mounts the wafer W on the top plate 14A, the main jig 14 is moved in the horizontal direction after the wafer W is vacuum-absorbed on the top plate 14A. During this period, the main jig 14 operates in conjunction with the alignment mechanism to perform alignment between the wafer W and the probe 15 A of the probe card 15. During this period, the static electricity is charged on the wafer W and the top plate 14A. However, since the top plate 14A is grounded, the crystal is in a period until the wafer W is in contact with the probe 15A. The static electricity of the circle W and the top plate 14A is removed via the top plate 14A, so that no static electricity is charged on the wafer W. After the wafer W is aligned, the first device in the wafer W is positioned directly below the probe 15 A. At this position, the lift mechanism 1 4B of the master jig 14 is driven to make the wafer W Raise and bring the device into contact with the probe 15 A. Simultaneously with this contact, the switch controller 26 operates to eliminate the force applied to the relay switch 23, and the switch 23B is turned on, the ground of the top plate 14A is released, and the wafer W and the top plate 14A are interrupted. In addition to electricity. After the device is in contact with the probe 15A, the wafer W is overdrived via the elevating mechanism 14B of the main jig 14 to electrically contact the wafer W with the probe 15 A and from the tester. The test head T is sent to the probe card 15 for the inspection signal, and is also applied from the test head T to the first conductor film 14 - 200826213 1 4C on the top plate 14A via the center conductor 18A of the cable 18 As the voltage of the inspection signal, the electrical characteristics of the device are checked. At this time, the second conductor film 14D on the lower surface of the top plate 14A is also applied with a voltage which is slightly the same as that of the first conductor film 14C. Thereby, the leakage current from the first conductor film 14C can be suppressed, and the measurement accuracy of the lifting device can be improved. Further, since the second conductor film 14D on the lower surface of the top plate 14 is electrically connected to the casing 23 C via the first shielding conductor 18B and the wiring 22A of the cable 18, it can be provided in the grounding wiring. The switch 23B at 22 and the case 23C are set to be substantially equipotential, and it is possible to suppress leakage current or electrical noise from the ground wiring 22 or the switch 23B. If the inspection of the first device is completed, the top plate 14A is lowered by the elevating mechanism 14B, and the contact between the device and the probe 15A is released. Simultaneously with this falling operation, according to the command signal from the switch controller 26, the relay switch 23 is actuated to close the switch 23B, and the first conductor film 14 C of the top plate 14 is grounded, as shown in Fig. 4 (b). In general, the static electricity charged to the wafer W and the top plate 14A during inspection is removed via the top plate 14A. Then, the main jig 14 moves in the X direction or the γ direction, and the wafer W is indexed and transported. After the next device reaches the probe 15A, the top plate 14A rises through the lifting mechanism 14B, and The device is in electrical contact with the probe 15 5 A. The static electricity charged on the wafer W and the top plate 14A is removed from the top plate 14A during the period from the lower movement of the top plate 4A to the contact operation. Simultaneously with the contact of the device and the probe 15 A, the relay switch 23 is actuated according to the finger -15-200826213 from the switch controller 26, and the switch 23B is opened and interrupted from the top plate 1 4 A The power is removed. In this state, the inspection signal is sent from the test head T via the probe 15 A, and the electrical characteristic inspection of the above device is repeated. If the inspection of the last device in the wafer W is completed, the top plate 14A is lowered. Simultaneously with this falling operation, the switch 23B of the relay switch 23 is turned off in accordance with the command signal from the switch controller 26, and the wafer W and the top plate 14A are neutralized (refer to Fig. 4 (c)). Then, in order to receive the wafer W that has been inspected, the main jig 14 is moved to the side of the loading chamber 1 1 , and the wafer transfer mechanism that is in standby in the loading chamber 11 unloads the wafer W on the main jig 1 4 . After the wafer W is unloaded, the wafer transfer mechanism returns the wafer W to be inspected to the accommodating portion, and then the next wafer W is carried out from the accommodating portion. Further, the wafer transfer mechanism transfers the wafer W that has been pre-aligned by the sub-clamp to the main jig 14 that is waiting in the probe chamber 1 2 . After the wafer W is placed on the main jig 14 , the above operation is repeated to perform the inspection of the wafer W, and at the same time, when the wafer W is not in contact with the probe 15 A, the wafer W is performed. And the power removal of the top plate 14A. Further, a wafer transfer mechanism including two arms of the upper and lower sides may be used, and the wafer W may be carried out from the accommodating portion by one of the arms, and the wafer may be pre-aligned to complete the wafer to be inspected. W Standby, when the wafer W that has been inspected reaches the time of the wafer transfer mechanism, the wafer W is unloaded by the other arm, and then loaded by one of the arms. As described above, except for the time when the wafer W is in contact with the probe 15 A - 16 - 200826213, since the static electricity of the wafer w and the top plate 14 A is removed by 1 4 A, the electrostatic charging is performed on the crystal. The opportunity on the circle W can be the same amount of charge from the initial device to the last device. Therefore, the inspection results between devices are not biased from the beginning of the inspection, and the ability is not High inspection. Moreover, since the amount of charge on the wafer W is such that there is no damage to the device during inspection. As described above, in the present embodiment, the relay switch 23 having the grounding wire for grounding the main jig 14 is provided to the grounding wiring 22, and the switch for opening and closing the 23 is provided. The controller 26, and capable of performing a non-electrical contact with the probe 15 A, grounds the top plate 1 4 A of the main jig 14 by opening the relay, and removes the wafer plate 1 4 A The work of static electricity; and when the wafer W and the probe 15 A, the top plate 14A project is released by turning on the relay switch 23, so that the wafer W is accumulated during the inspection of the wafer W. Static electricity, even in the ultra-fine micro-circle W below the 6 5 nm process, can also improve the reliability of the inspection, and the damage of the wiring structure. Further, according to the present embodiment, the main jig 14A is connected to the test head T and the ground wiring 22 is connected to the center conductor 18A of the cable 18. Therefore, the cable conductor can be used. 1 8 A is used as the grounding wiring for the static elimination device 20, and further, according to the present embodiment, the cable through the top plate is rarely maintained until the last time, and the reliability is small. And the relay switch = the crystal prevention device that is almost unstructured when the wafer S 2 3 is turned off and the ground of the top electrical contact is electrically connected via the cable. 1 Shielding -17- 200826213 Body 18B Since the connection case 23C is electrically connected to the relay switch 23 via the wiring 22A, the switch 23B and the case 23C are set to be substantially equipotential, and the grounding wiring 22 or the switch can be used. The leakage current or electrical noise from 23B is suppressed. Further, since the first shield conductor 18B of the cable 18 is electrically connected to the second conductor film 14D on the lower surface of the top plate 14A, the second conductor film 14D may be applied in the same manner as the first conductor film 14C. The voltage can thereby suppress the leakage current from the first conductor film 14C and improve the measurement accuracy of the device. Further, since the relay switch 23 is connected to the push switch 29 and is configured to be manually operable, when an abnormality due to static electricity occurs during the inspection, etc., the push button switch can be used. The operation is to remove the static electricity of the wafer W by emergency evacuation. Further, in the above-described embodiment, the inspection device for moving the main jig (mounting table) with respect to the probe card has been described. However, the inspection device may be configured to move the probe card with respect to the mounting table. . Further, in the above embodiment, the static eliminator used in the inspection apparatus for inspecting the wafer W has been described. However, the present invention is also applicable to an inspection apparatus other than the wafer. [Industrial Applicability] The present invention can be suitably used in an inspection apparatus in the field of semiconductor manufacturing. [Brief Description of the Drawings] -18-200826213 [Fig. 1] A front view showing an example of a structure of an inspection apparatus to which one embodiment of the static eliminating device of the present invention is applied is partially cut off. Fig. 2 is a cross-sectional view showing the top plate of the inspection apparatus shown in Fig. 1. FIG. 3 is a block diagram showing the static elimination device shown in FIG. 1. [Fig. 4] (a) to (c) are timing charts for demonstrating the method of removing the wafer. [Description of main component symbols] 1 〇: Inspection device 14: Main jig (mounting table) 14A: Top plate 14C: First conductor film 14D: Second conductor film 1 5: Probe card 1 5 A: Probe 1 8 : Cable Line 20: Static Elimination Device 22: Grounding Wiring 23: Relay Switch 23: Case 26: Switching Controller W: Wafer-19-