TW200809406A - Light sensitive composition, light sensitive film, permanent pattern forming method and printing substrate - Google Patents
Light sensitive composition, light sensitive film, permanent pattern forming method and printing substrate Download PDFInfo
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- TW200809406A TW200809406A TW096110281A TW96110281A TW200809406A TW 200809406 A TW200809406 A TW 200809406A TW 096110281 A TW096110281 A TW 096110281A TW 96110281 A TW96110281 A TW 96110281A TW 200809406 A TW200809406 A TW 200809406A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Epoxy Resins (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Abstract
Description
200809406 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種感度良好且生保存性及處理性優異 的感光性組成物、感光性薄膜、及能夠以良好效率形成半導 體領域之高精細的永久圖案(保護膜、層間絕緣膜及耐焊圖 案等)之永久圖案形成方法、以及藉由該永久圖案形成方法 而形成永久圖案之印刷基板。 【先前技術】 向來,在形成耐焊圖案等之永久圖案之際,一直是使用 一種藉由在支撐體上塗布感光性組成物並予以乾燥而形成 的感光層之感光性薄膜。前述之永久圖案的製造方法,例如 ,可以在形成前述永久圖案的覆銅積層板等之基體上,積層 前述之感光性薄膜而形成積層體,並對於該積層體中的前述 感光層進行曝光,於該曝光後,將前述感光層予以顯像使之 形成圖案,然後再藉由進行硬化處理等來形成前述之永久圖 案。 爲了有效率地得到高精細的前述永久圖案,所以要求提 昇感度。另此,本發明人乃提案一種以達成感度之提昇做爲 目的之感光性薄膜,其係具有一種包括使用α-胺基烷基苯 酮化合物(Irgacure 907)做爲光聚合起始劑、且以噻噸酮化合 物(Kachacure DETX-S)做爲增感劑之感光層(參照專利文獻 1)。 但,因爲前述之α -胺基烷基苯酮化合物係具有胺基構 造的緣故,所以在使用熱交聯劑的情況下,即使是在室溫附 200809406 近時也會慢慢地誘發熱交聯劑之反應,因而難免會有感度的 經時安定性等之生保存安定性下降的情形。 因此,形成感光層的感光性組成物溶液直接塗布在基體 上的情況(以下,稱爲「液光阻劑型」)下,雖然是一種先行 製作分散有熱交聯劑以外的成分之分散液、及分散或溶解有 熱交聯劑之液體,然後將兩者予以混合、調製而成之所謂的 二液型,然而在混合作業後積層於基體上的狀態下,硬化反 應會慢慢地進行,以致隨著時間經過會有不能曝光、顯像的 情況,所以一直期望提昇積層體狀態的保存安定性。 又,就預先製作在支撐體上形成由前述之感光性組成物 構成的感光層之薄膜,並將它積層在印刷基板等之基體上的 情況(以下,稱爲「薄膜型」)而論,由於要求處理容易性的 緣故,所以難以採用如上述的液光阻劑型那樣的態樣。 另一方面,也已提案一種感光性組成物,其係包括不飽 和雙鍵之鹼可溶性黏合劑、肟化合物之光聚合性化合物、噻 噸酮化合物之增感劑、聚合性化合物、及含有2個以上之環 氧基的環氧化合物(參照專利文獻2及3)。 但是,即使藉由使用此等,雖然可以提高感度,然而仍 然會有感度的經時安定性等之生保存性下降的問題。 其他方面,也已提案一種將部分構造上具有雙酚骨架之 環氧化合物的環氧丙烯酸酯化合物等用於黏合劑,來做爲可 用於感光層的黏合劑之耐焊用圖案形成材料(參照專利文獻 然而’專利文獻4之材料會有低感度的問題,尤其在進 4)。 200809406 行雷射曝光的情況下會有曝光步調(takt,德語)緩慢問題。 又,對於如何使液狀耐焊劑塗布後的安定性和高感度化兩者 兼顧,亦沒有任何記載。 從而,目前的現狀是:尙未提供一種高感度且積層體之 生保存性優異的感光性組成物、感光性薄膜、使用前述之感 光性組成物之感光絨薄膜、及能夠以良好效率形成保護膜、 絕緣膜等之高精細的永久圖案之永久圖案形成方法、以及藉 由該永久圖案形成方法而形成永久圖案之印刷基板;更且期 望進一步地改良開發。 【專利文獻1】 特開2000-232264號公報 【專利文獻2】 特開2002-5 1 9732號公報 【專利文獻3】 特開2005-1 82004號公報 【專利文獻4】 國際公開第014/34147號手冊 【發明內容】 【發明所欲解決的課題】 本發明係以解決關於習用之前述諸項問題,以及達成以 下之目的做爲課題。也就是說,本發明之目的在於提供一種 高感度、且積層體之生保存性優異的感光性組成物、使用此 種感光性組成物之感光性薄膜、及能夠以良好效率形成半導 體領域之高精細的永久圖案(保護膜、層間絕緣膜及耐焊圖 案等)之永久圖案形成方法、以及藉由該永久圖案形成方法 而形成永久圖案之印刷基板。 【用以解決課題之手段】 用以解決前述課題的手段係如以下所述。亦即: 200809406 < 1 > 一種感光性組成物,其特徵在於:至少包括(A)黏合 劑、(B)聚合性化合物及(c)光聚合起始劑,其中(A) 黏合劑係爲使部分構造上具有雙酚骨架之環氧化合 物(a)和含有不飽和基的單羧酸(b)之反應物、與含有 飽和基及不飽和基中之任一者的多元酸化合物(c)起 反應而得到的黏合劑。 < 2 > 如前述< 1 >所記載之感光性組成物,其中(A)黏合 劑係爲使以下述一般式(1)及一般式(2)中之任一者所 代表之環氧化合物(a)和含有不飽和基的單羧酸(b)之 反應物、與含有飽和基及不飽和基中之任一者的多元 酸化合物(c)起反應而得到的光硬化性樹脂;[Technical Field] The present invention relates to a photosensitive composition which is excellent in sensitivity and excellent in storage stability and handleability, a photosensitive film, and a high-definition structure capable of forming a semiconductor field with good efficiency. A permanent pattern forming method of a permanent pattern (a protective film, an interlayer insulating film, a solder resist pattern, etc.), and a printed circuit board in which a permanent pattern is formed by the permanent pattern forming method. [Prior Art] Conventionally, when a permanent pattern such as a solder resist pattern is formed, a photosensitive film which is formed by applying a photosensitive composition on a support and drying it is used. In the method for producing the permanent pattern described above, for example, a photosensitive film may be laminated on a substrate such as a copper-clad laminate in which the permanent pattern is formed to form a laminate, and the photosensitive layer in the laminate may be exposed. After the exposure, the photosensitive layer is developed to form a pattern, and then the permanent pattern is formed by performing a curing treatment or the like. In order to efficiently obtain the high-precision aforementioned permanent pattern, it is required to increase the sensitivity. In addition, the present inventors have proposed a photosensitive film for the purpose of achieving improvement in sensitivity, which comprises using an α-aminoalkylphenone compound (Irgacure 907) as a photopolymerization initiator, and A photosensitive layer using a thioxanthone compound (Kachacure DETX-S) as a sensitizer (see Patent Document 1). However, since the aforementioned α-aminoalkylphenone compound has an amine group structure, in the case of using a thermal crosslinking agent, heat is slowly induced even when the temperature is attached to the room temperature at 200809406. The reaction of the crosslinking agent will inevitably lead to a decrease in the stability of the storage, such as the stability over time of the sensitivity. Therefore, when the photosensitive composition solution forming the photosensitive layer is directly applied onto the substrate (hereinafter referred to as "liquid photoresist type"), it is a dispersion which is prepared by dispersing a component other than the thermal crosslinking agent. And a so-called two-liquid type in which a liquid of a thermal crosslinking agent is dispersed or dissolved, and then the two are mixed and prepared. However, in a state of being laminated on the substrate after the mixing operation, the hardening reaction proceeds slowly. Therefore, there is a case where exposure or development cannot be performed with time, and it has been desired to improve the preservation stability of the laminated body state. In addition, a film in which a photosensitive layer composed of the above-described photosensitive composition is formed on a support and laminated on a substrate such as a printed circuit board (hereinafter referred to as "film type") is used. Since it is required to be easy to handle, it is difficult to adopt the aspect as the above-described liquid photoresist type. On the other hand, a photosensitive composition including an alkali-soluble binder of an unsaturated double bond, a photopolymerizable compound of an anthracene compound, a sensitizer of a thioxanthone compound, a polymerizable compound, and a product 2 have also been proposed. An epoxy compound having more than one epoxy group (see Patent Documents 2 and 3). However, even if the sensitivity is improved by using these, there is still a problem that the storage stability of the sensitivity such as the stability over time is lowered. In other respects, an epoxy acrylate compound or the like having an epoxy compound partially having a bisphenol skeleton is used for a binder as a solder resist pattern forming material which can be used as a binder for a photosensitive layer (see Patent Literature However, the material of Patent Document 4 has a problem of low sensitivity, especially in 4). 200809406 In the case of laser exposure, there will be a slow exposure (takt, German) problem. Further, there is no description as to how to achieve both stability and high sensitivity after application of the liquid solder resist. Therefore, the current state of the art is that a photosensitive composition having high sensitivity and excellent storage property of a laminate, a photosensitive film, a photosensitive film using the photosensitive composition described above, and a protective film can be formed with good efficiency. A permanent pattern forming method of a high-definition permanent pattern such as a film or an insulating film, and a printed substrate in which a permanent pattern is formed by the permanent pattern forming method; further development is desired. [Patent Document 1] JP-A-2000-232264 (Patent Document 2) JP-A-2002-5 1 9732 (Patent Document 3) JP-A-2005-1 82004 (Patent Document 4) International Publication No. 014/34147 OBJECTS OF THE INVENTION [Problems to be Solved by the Invention] The present invention has been made in order to solve the above-mentioned problems of the conventional use and achieve the following objects. In other words, an object of the present invention is to provide a photosensitive composition having high sensitivity and excellent storage stability of a laminate, a photosensitive film using the photosensitive composition, and a semiconductor field capable of forming a semiconductor with good efficiency. A permanent pattern forming method of a fine permanent pattern (a protective film, an interlayer insulating film, a solder resist pattern, etc.), and a printed substrate in which a permanent pattern is formed by the permanent pattern forming method. [Means for Solving the Problem] The means for solving the above problems are as follows. That is: 200809406 < 1 > A photosensitive composition comprising at least (A) a binder, (B) a polymerizable compound, and (c) a photopolymerization initiator, wherein (A) a binder system a reaction product of an epoxy compound (a) having a bisphenol skeleton and a monocarboxylic acid (b) having an unsaturated group, and a polybasic acid compound containing any one of a saturated group and an unsaturated group ( c) A binder obtained by the reaction. The photosensitive composition of the above-mentioned <1>, wherein the (A) binder is represented by any one of the following general formula (1) and general formula (2). Photocurability obtained by reacting an epoxy compound (a) with a reaction product of an unsaturated group-containing monocarboxylic acid (b) and a polybasic acid compound (c) containing either a saturated group or an unsaturated group Resin
〇——CH2—CH-CH〇—d〇——CH2—CH-CH〇—d
oxOx
一般式(1) 但’在前述之一般式(1)中,x係代表氫原子及縮水 甘油基中之任一者;R係代表亞甲基及異亞丙基中之 任一者;η係代表1以上之整數;General formula (1) but in the above general formula (1), x represents any of a hydrogen atom and a glycidyl group; and R represents any of a methylene group and an isopropylidene group; Represents an integer greater than 1;
一般式(2) 但’在前述之一般式(2)中,R1係代表氫原子及甲基 200809406 中之任一者;R2及R 3係代表伸院基;m及η係代表 m + n爲2〜50的正整數;ρ係代表正整數。 < 3>如前述< 1 >至< 2 >中任一項所記載之感光性組成 物,其感度爲0.1〜20 mJ/cm2。 < 4> 如前述< 1 >至< 3 >中任一項所記載之感光性組成 物,其係進一步包括(D)熱交聯劑。 < 5 > 如前述< 1 >至< 4 >中任一項所記載之感光性組成 物,其中肟衍生物係具有下述一般式(3)及下述一般 式(4)中之任一種所代表的部分構造;In the above general formula (2), R1 represents any one of a hydrogen atom and a methyl group 200809406; R2 and R 3 represent a stretching base; m and η represent m + n It is a positive integer of 2 to 50; the ρ system represents a positive integer. The photosensitive composition according to any one of the above-mentioned items, wherein the photosensitive composition has a sensitivity of 0.1 to 20 mJ/cm 2 . The photosensitive composition according to any one of the above-mentioned <1> to (3), further comprising (D) a thermal crosslinking agent. The photosensitive composition according to any one of the above-mentioned <1>, wherein the anthracene derivative has the following general formula (3) and the following general formula (4) Part of the structure represented by any one of them;
Ar-(c(Y1)=N-〇-Y2)m -般式(3)Ar-(c(Y1)=N-〇-Y2)m - general formula (3)
Ar-(〇〇-C(Y1)=N-〇-Y2) 一 般式⑷ 但,在前述之一般式(3)及(4)中,Ar係代表芳香族基 及雜環基中之任一種;Y1係代表氫原子及一價的取 代基中之任一種;Y2係代表脂肪族基、芳香族基、 雜環基、COY3、C02Y3及CONY4Y5中之任一種;Y3 、丫4及Y5係代表脂肪族基、芳香族基及雜環基中之 任一種;m係代表1以上之整數。 < 6>如前述< 4 >至< 5 >中任一項所記載之感光性組成 物’其中(D)熱交聯劑的交聯基和(A)黏合劑的酸性基 之比例爲交聯基/酸性基=〇 . 3〜3.0。 < 7 >如前述< 1 >至< 6 >中任一項所記載之感光性組成 物’其中(B)聚合性化合物係包括從(甲基)丙烯酸基的 -10- 200809406 單體所選擇的至少1種。 < 8 > 如前述< 4 >至< 7 >中任一項所記載之感光性組成 物,其中(D)熱交聯劑係從環氧化合物、氧雜環丁烷 化合物、聚異氰酸酯化合物、使聚異氰酸酯化合物與 嵌段劑起反應而得到的化合物、及三聚氰胺衍生物中 所選取的至少1種。 < 9 > 如前述< 1 >至< 8 >中任一項所記載之感光性組成 物,其係更進一步地含有(E)彈性體。 < 1 〇 >如前述< 1 >至< 9 >中任一項所記載之感光性組成 物,其係更進一步地含有(F)苯氧樹脂。 < 1 1 >如前述< 1 >至< 1 0 >中任一項所記載之感光性組 成物,其係更進一步地含有(G)增感劑。 < 12>如前述< 1 1 >所記載之感光性組成物,其中(G)增感 劑係包括雜縮環系化合物。 < 1 3 >如前述< 1 2 >所記載之感光性組成物,其中雜縮環 系化合物係噻噸酮化合物。 <14> 一種感光性薄膜,其特徵在於:由至少具有支撐體 、和在該支撐體上之由如前述<1>至<13>中任一 項記載之感光性組成物所構成的感光層而成° <15>如前述<14>所記載之感光性薄膜’其中感光層之 厚度爲1〜1〇〇微米。 < 1 6 >如前述< 1 4 >到< 1 5 >中任一項所記載之感光性薄 膜,其中支撐體係含有合成樹脂且爲透明的。 < 1 7 >如前述< 1 4 >到< 1 6 >中任一項所記載之感光性薄 -11- 200809406 膜,其中支撐體係長尺狀。 < 1 8 >如前述< 1 4 >到< 1 7 >中任一項所記載 膜,其係長尺狀,並捲成圓筒狀。 < 1 9 >如前述< 1 4 >到< 1 8 >中任一項所記載 膜’其係由在感光層上具有保護薄膜而; <20> —種感光性積層體,其特徵爲:在基體 前述< 1 >到< 1 3 >中任一項記載之感 所構成的感光層。 <21>如前述<20>所記載之感光性積層體, 係藉由如目丨j述〈1 4 >到< 1 9 >中任一*項 性薄膜而形成。 < 22 > —種圖案形成裝置,其特徵在於:至少 光的光照射機構、與調變來自該光照射 對於前述< 20 >到< 2 1 >中任一項所記 積層體中的感光層進行曝光之光調變機 22>所記載的圖案形成裝置中,前述之 係向前述之光調變機構照光。前述光調 來自前述光照射機構的受光予以調變。 調變機構所調變的光係對著前述感光層 。例如,然後進行前述感光層之顯像時 精細的圖案。 < 23>如前述< 22>所記載之圖案形成裝置, 步地由具有基於光調變機構形成的圖案 控制信號之圖案信號生成機構所構成, 之感光性薄 之感光性薄 衫成。 上具有由如 光性組成物 其中感光層 記載之感光 具有可照射 機構之光並 載之感光性 構。在該< 光照射機構 變機構係將 經由前述光 而使之曝光 ,可形成高 其係更進一 資訊而生成 並隨著該圖 -12- 200809406 案信號生成機構所產生的控制信號來調變從光照射 機構所照射的光。在該< 23 >所記載之圖案形成裝 置中,係藉由使得前述之光調變機構具有前述之圖 案信號生成機構,而得以隨著該由圖案信號生成機 構所產生的控制信號來調變從前述光照射機構所照 射的光。 <24>如前述<22>至<23>中任一項所記載之圖案形成 裝置,其中光調變機構係由具有η個圖素部所構成 ’並能夠隨著所形成的圖案資訊來控制在該η個圖 素部中之連續配置的小於η個之任意的前述圖素部 。在該<24>所記載之圖案形成裝置中,係藉由隨 著圖案資訊來控制前述光調變機構中的η個圖素部 中連續配置的小於η個之任意的圖素部,而得以高 速地調變從前述之光照射機構所照射的光。 <25>如前述<22>至<24>中任一項所記載之圖案形成 裝置,其中光調變機構係爲空間光調變元件。 < 26 >如前述< 25 >所記載之圖案形成裝置,其中空間光 調變元件係爲數位微鏡片裝置(DMD)。 <27>如前述<24>至<26>中任一項所記載之圖案形成 裝置,其中圖素部係微鏡片。 <28>如前述<22>至<27>中任一項所記載之圖案形成 裝置,其中光照射機構係可以合倂2條以上之光來 進行照射。在該< 28 >所記載之圖案形成裝置中, 其係藉由可以合倂2條以上之光來進行照射的前述 200809406 之光照射機構,而得以焦點深度深的曝光之光來進 行曝光。結果,使得前述之感光層的曝光乃可以極 高精細度地進行。例如,然後進行前述感光層之顯 像時,就可形成極高精細的圖案。 <29>如前述<22>至<28>中任一項所記載之圖案形成 裝置,其中光照射機構係具有複數個雷射、多模光 纖、及將從該複數個雷射所分別照射的雷射光予以 聚光而使之與前述多模光纖維相結合之集合光學系 統。在該<29>所記載之圖案形成裝置中,前述之 光照射機構係藉由以前述的集合光系統而將從前述 之複數個雷射所個別照射的雷射光予以集光,並且 可以結合到前述之多模光纖維上,而得以焦點深度 深的曝光之光來進行曝光。結果,使得前述之感光 層的曝光乃可以極高精細度地進行。例如,然後進 行前述感光層之顯像時,就可形成極高精細的圖案 〇 < 3 0 > —種永久圖案形成方法,其特徵在於:包括對於如 前述<20>至<21>中任一項所記載之感光性積層 體中的感光層進行曝光。 <31>如前述<30>所記載之永久圖案形成方法,其中曝 光係使用350〜415奈米波長之雷射光。 < 32 >如前述< 30 >到< 3 1 >中任一項所記載之永久圖案 形成方法,其中曝光係基於形成的圖案資訊來進行 使形成影像圖樣。 ,的406 ^ 33 \ ^ 如前述< 30 >到< 32 >中任一項所記載之永 形成方法,其中曝光係使用曝光頭,其係配 射機構、及具有接受來自前述光照射機構的 以射出之η個(但,η爲2以上之自然數)的2 排列之圖素部、能夠因應圖案資訊而控制前 素部的光調變機構之曝光頭,且係經配置以 述圖素部的列方向與該曝光頭的描掃方向形 之設定傾斜角度0, 對於前述之曝光頭,藉著使用圖素部指定機 可供使用的前述圖素部之中指定使用於Ν < 但,Ν爲2以上之自然數)的前述圖素部; 對於前述之曝光頭,藉著圖素部控制機構, 得僅有經前述使用圖素部指定機構所指定的 素部參與曝光之方式來進行控制前述圖素部 使前述曝光頭相對於掃描方向移動而對於前 層進行曝光。於該< 33 >所記載之永久圖案 法中,對於前述之曝光頭,係藉著使用圖素 機構,由可供使用的前述圖素部之中指定使 次曝光(但,Ν爲2以上之自然數)的前述圖素 驟;並藉著圖素部控制機構,依照使得僅有 使用圖素部指定機構所指定的前述圖素部參 之方式來控制前述圖素部。藉由使前述曝光 於掃描方向移動而對於前述感光層進行曝光 以將因前述曝光頭之安裝位置及安裝角度的 久圖案 備光照 光並予 次元狀 述之圖 使得前 成預定 構,由 欠曝光( 依照使 前述圖 :及 述感光 形成方 部指定 用於Ν 部之步 經前述 與曝光 頭相對 ,乃可 偏差而 -15- 200809406 引起形成於前述感光層之被曝光面上的前述圖案之 解像度的變異及濃度不均一現象予以均一化。結果 ,前述感光層之曝光乃得以高精細地進行。例如, 然後藉由進行前述感光層之顯像而形成高精細的圖 案。 <34>如前述<33>所記載之永久圖案形成方法,其中曝 光係可藉由複數個曝光頭來進行,使用圖素部指定 手段係從藉由複數個前述曝光頭所形成的被曝光面 上之重複曝光範菌的頭間連繫區域之參與曝光的圖 素部中,指定在前述頭間連繫區域中的用以實現N 次曝光所使用之前述圖素部。於該< 34 >所記載之 永久圖案形成方法中,曝光係藉由複數個曝光頭來 進行,使用圖素部指定手段係從藉由複數個前述曝 光頭所形成的被曝光面上之重複曝光範圍的頭間連 繫區域之參與曝光的圖素部中,指定在前述頭間連 繫區域中的用以實現N次曝光所使用之前述圖素部 ,藉以將因前述曝光頭之安裝位置及安裝角度的偏 差而引起形成於前述感光層之被曝光面上的前述圖 案之解像度的變異及濃度不均一現象予以均一化。 結果,前述感光層之曝光乃得以高精細地進行,例 如,然後再藉由進行前述感光層之顯像而形成高精 細的圖案。 <35>如前述<34>所記載之永久圖案形成方法,其中曝 光係可藉由複數個曝光頭來進行,使用圖素部指定 -16- 200809406 手段係從藉由複數個前述曝光頭所形成的被曝光面 上之重複曝光範圍的頭間連繋區域以外之參與曝光 的圖素部中,指定在前述頭間連繫區域以外之區域 中的用以實現N次曝光所使用之前述圖素部。於該 < 35 >所記載之永久圖案形成方法中,曝光係可藉 由複數個曝光頭來進行,使用圖素部指定手段係從 藉由複數個前述曝光頭所形成的被曝光面上之重複 曝光範圍的頭間連繫區域以外之參與曝光的圖素部 中,指定在前述頭間連繫區域以外之區域中的用以 實現N次曝光所使用之前述圖素部,乃可以將因前 述曝光頭之安裝位置及安裝角度的偏差而引起形成 於前述感光層之被曝光面上的前述圖案之解像度的 變異及濃度不均一現象予以均一化。結果,前述感 光層之曝光乃得以高精細地進行,例如,然後再藉 由進行前述感光層之顯像而形成高精細的圖案。 < 36>如前述< 33 >到< 35 >中任一項所記載之永久圖案 形成方法,其中設定傾斜角度0係經設定成具有符 合0 2 0 ideal的關係,而前述之0 ideal,相對於N 次曝光之次數N、圖素部之列方向的個數s、前述圖 素部之列方向之間隔P、及於曝光頭呈傾斜狀態下沿 著垂直於該曝光頭描掃方向的方向上之圖素部的列 方向之間距5而言,係符合下式:s psine idealg N 5 〇 < 37 >如前述< 33 >到< 36 >中任一項所記載之永久圖案 -17· 200809406 形成方法,其中N次曝光之N係爲3以上之自然數 。於該< 3 7 >所記載之永久圖案形成方法中,係藉 由使N次曝光之N成爲3以上之自然數,來進行多 重繪圖。結果,由於補正的效果,乃可以將因前述 曝光頭之安裝位置及安裝角度的偏差而引起形成於 前述感光層之被曝光面上的前述圖案之解像度的變 異及濃度不均一現象,予以更精密地均一化。 < 38 >如前述< 33 >到< 37 >中任一項所記載之永久圖案 形成方法,其中的使用圖素部指定機構係具備: 光點位置檢出機構,其係用以檢測出經由圖素部而 生成、當做構成被曝光面上的曝光範圍之圖素單位 的在被曝光面上之光點位置的機構;以及 圖素部選擇機構,其係基於前述光點位置檢出機構 所檢測出的結果,來選擇用以實現N次曝光所使用 的圖素部之機構。 <39>如前述<33>到<38>中任一項所記載之永久圖案 形成方法,其中使用圖素部指定機構係以行爲單位 來指定用以實現N次曝光上所使用的使用圖素部。 < 40>如前述< 38>到< 39>中任一項所記載之永久圖案 形成方法,其中光點位置檢出機構,係基於所檢出 的至少2個光點位置,來界定在使曝光頭呈傾斜狀 態下’被曝光面上光點之列方向、與前述曝光頭的 掃描方向所形成的實質傾斜角度0,,且圖素部選擇 機構係依照得以達成吸收前述之實質傾斜角度0, -1 8 - 200809406 與設定傾斜角度0間之誤差的方式來選擇使用圖素 部。 ♦ <41>如前述<40>所記載之永久圖案形成方法,其中實 質傾斜角度Θ ’係爲在使曝光頭呈傾斜之狀態下,被 曝光面上光點之列方向、與前述曝光頭的掃描方向 所形成的複數個實質傾斜角度之平均値、中央値、 最大値及最小値中之任一者。 <42>如前述<38>到<41>中任一項所記載之永久圖案 形成方法,其中圖素部選擇機構係基於實質傾斜角 度0 ’來導出滿足t tan 0,=N (惟,N係代表N次曝 光之次數N)的關係之接近t之自然數Τ’並選擇於 配列有m行(惟,m係代表2以上之自然數)的圖素 部中之第1行到第T行的前述圖素部以做爲使用圖 素部。 <43>如前述<38>到<42>中任一項所記載之永久圖案 形成方法,其中圖素部選擇機構係基於實質傾斜角 度0 ’來導出滿足t t a η 0 ’ = N (惟,N係代表N次曝 光之次數Ν)的關係之接近t之自然數Τ ’將於配列 有m行(惟,m係代表2以上之自然數)的圖素部中 之第(T+1)行到第m行的前述圖素部界定爲不使用 圖素部,並選擇該不使用圖素部以外的前述圖素部 以做爲使用圖素部。 <44>如前述<38>到<43>中任一項所記載之永久圖案 形成方法,其中圖素部選擇機構係在至少包括藉由 -19- 200809406 複數個圖素部列所形成的被曝光面上之重複曝光範 圍的區域中之 (1 ) 依照使得對於理想的N次曝光之曝光過多區域 、及曝光不足區域的面積總和成爲最小的方式來 選擇使用圖素部之機構, (2) 依照使得對於理想的N次曝光之曝光過多區域 的圖素單位數等於曝光不足區域的圖素單位數 之方式來選擇使用圖素部之機構, (3) 依照使得對於理想的N次曝光之曝光過多區域 的面積成爲最小、且不產生曝光不足區域的方式 來選擇使用圖素部之機構,及 (4) 依照使得對於理想的N次曝光之曝光不足區域 的面積成爲最小、且不產生曝光過多區域的方式 來選擇使用圖素部之機構 中之任一者。 <45>如前述<38>到<44>中任一項所記載之永久圖案 形成方法,其中圖素部選擇機構係在藉由複數個圖 素部列所形成的被曝光面上之重複曝光範圍的頭間 連繫區域中之 (1 ) 依照使得對於理想的N次曝光之曝光過多區域 、及曝光不足區域的面積總和成爲最小的方式 ,從關於前述頭間連繫區域之曝光的圖素部來 界定不使用圖素部,並選擇該不使用圖素部以 外的前述圖素部來做爲使用圖素部之機構, -20- 200809406 (2) 依照使得對於理想的N次曝光之曝光過多區域 的圖素單位數等於曝光不足區域的圖素單位數 之方式,從關於前述頭間連繫區域之曝光的圖 素部來界定不使用圖素部,並選擇該不使用圖 素部以外的前述圖素部來做爲使用圖素部之機 構, (3) 依照使得對於理想的N次曝光之曝光過多區域 的面積成爲最小、且不產生曝光不足區域的方 式,從關於前述頭間連繫區域之曝光的圖素部 來界定不使用圖素部,並選擇該不使用圖素部 以外的前述圖素部來做爲使用圖素部之機構, 及 (4) 依照使得對於理想的N次曝光之曝光不足區域 的面積成爲最小、且不產生曝光過多區域的方 式,從關於前述頭間連繫區域之曝光的圖素部 來界定不使用圖素部,並選擇該不使用圖素部 以外的前述圖素部來做爲使用圖素部之機構 中之任一者。 < 46 >如前述< 45 >所記載之永久圖案形成方法,其中不 使圖素部係以行爲單位加以界定。 < 47 >如前述< 38 >到< 46 >中任一項所記載之永久圖案 形成方法,其爲了指定使用圖素部指定機構中的使 用圖素部,乃於可供使用的前述圖素部之中,相對 於N次曝光之N,只使用構成每(N-1)列的圖素部列 -21 - 200809406 之前述圖素部來進行參照曝光。於該< 4 7 >所記載 之永久圖案形成方法中’爲了指定使用圖素部指定 機構中的使用圖素部,乃於可供使用的前述圖素部 之中,相對於N次曝光之N,只使用構成每(N -1 )列 的圖素部列之前述圖素部來進行參照曝光’而可以 得到略呈1次繪圖之單純的圖素部列。結果,即可 容易地指定前述頭間連繫區域中的前述圖素部。 <48>如前述<38>到<47>中任一項所記載之永久圖案 形成方法,其爲了指定使用圖素部指定機構中的使 用圖素部,乃於可供使用的前述圖素部之中,相對 於N次曝光之N,只使用構成每1 /N行的圖素部行 之前述圖素部來進行參照曝光。於該< 48 >所記載 之永久圖案形成方法中,爲了指定使用圖素部指定 機構中的使用圖素部,乃於可供使用的前述圖素部 之中,相對於N次曝光之N,只使用構成每1 /N行 的圖素部行之前述圖素部來進行參照曝光,而可以 得到略呈1次繪圖之單純的圖素部列。結果,即可 容易地指定前述頭間連繋區域中的前述圖素部。 < 49>如前述< 33 >到< 48 >中任一項所記載之永久圖案 形成方法,其中使用圖素部指定機構係具有做爲光 點位置檢出機構之狹縫和光檢出器、以及做爲圖素 部選擇機構的連接於前述光檢出器之演算裝置。 < 50>如前述< 33 >到< 49 >中任一項所記載之永久圖案 形成方法,其中N次曝光之N係3以上7以下之自 -22 - 200809406 然數。 <51>如前述<33>到<50>中任一項所記載之永久圖案 形成方法,其中光調變機構係更進一步具有基於所 形成的圖案資訊而生成控制信號之圖案信號生成機 構所構成,並隨著該圖案信號生成機構所產生的控 制信號來調變從光照射機構所照射的光。在該< 5 1 >所記載之永久圖案形成方法中,藉由使光調變機 構具有前述之圖案信號生成機構,以使隨著該圖案 信號生成機構所產生的控制信號來調變從前述之光 照射機構所照射的光。 <52>如前述<51>所記載之永久圖案形成方法,其中光 調變機構係爲空間光調變元件。 <53>如前述<52>所記載之永久圖案形成方法,其中空 間光調變元件係爲數位微鏡片裝置(DMD)。 <54>如前述<33>到<53>中任一項所記載之永久圖案 形成方法,其中圖素部係微鏡片。 <55>如前述<33>到<54>中任一項所記載之永久圖案 形成方法,其係具有以使表示圖案資訊之圖案的預 定部分之尺寸、與可以藉由所指定的使用圖素部予 以實現的對應部之尺寸一致的方式,來變換前述之 圖案資訊的變換機構。 <56>如前述<33>到<55>中任一項所記載之永久圖案 形成方法’其中光照射機構係可以合倂2條以上之 光來進行照射。於該< 56 >所記載之永久圖案形成 -23- 200809406 方法中,由於可以光照射機構係可以合倂2條以上 之光來進行照射,因而可以曝光焦點深度深的曝光 光來進行曝光。結果,前述感光性薄膜之曝光乃得 以極高精細地進行,在它之後再藉由進行前述感光 層之顯像而形成極高精細的圖案。 < 57>如前述< 33>到< 56>中任一項所記載之永久圖案 形成方法,其中光照射機構係具有複數個雷射、多 模光纖、及將從該複數個雷射所分別照射的雷射光 予以集光而使之與前述的多模光纖相結合之集合光 學系統。於該< 57 >所記載之永久圖案形成方法中 ’係可以藉由前述光照射機構,將由前述之複數個 雷射所分別照射的雷射光予以聚光,而使之與前述 的多模光纖相結合之集合光學系統,因而可以曝光 焦點深度深的曝光光來進行曝光。結果,前述感光 性薄膜之曝光乃得以極高精細地進行,然後,再藉 由進行前述感光層之顯像而形成極高精細的圖案。 < 58>如前述< 30 >到< 57 >中任一項所記載之永久圖案 形成方法,其係在進行曝光之後,再對於感光層進 行顯像處理。於該< 58 >所記載之永久圖案形成方 法中,其係在進行前述的曝光之後,再對於前述的 感光層進行顯像處理,就可以形成高精細的圖案。 < 59 >如前述< 58 >所記載之永久圖案形成方法,其係在 進行顯像之後,再進行永久圖案之形成。 <60> —種永久圖案,其特徵在於:藉由如前述<3〇>到 -24- 200809406 < 5 9 >中任一項所記載之永久圖案形成方法所形成 。於該<60>所記載之永久圖案,由於其係藉由前 述之圖案形成方法所形成者,因而具有優異的耐藥 品性、表面硬度、耐熱性等,且可有效地使用於高 精細的半導體、構件之多層配線基板及堆疊配線基 板等之高密度實裝上。 <61>如前述<60>所記載之永久圖案,其係保護膜、層 間絕緣膜、及耐焊圖案中之至少任一種。該< 6 1 > 所記載之永久圖案,由於其係形成保護膜、層間絕 緣膜、及耐焊圖案中之至少任一種,因而可藉由該 膜所具有的絕緣性、耐熱性等來保護配線以避免來 自外部的衝擊以及彎曲等。 < 62 > —種印刷基板,其特徵在於:係藉由如前述< 30 > 到< 59 >中任一項所記載之永久圖案形成方法而形 成永久圖案。 【發明效果】 當藉由利用本發明時,即可以解決習用之問題,並可以 提供一種以耐焊等之永久圖案形成做爲目的,即使是前述薄 膜形式,其感度也是良好的,而且生保存性及處理性優異的 感光性組成物、感光性薄膜、及能夠以良好效率形成半導體 領域之高精細的永久圖案(保護膜、層間絕緣膜及耐焊圖案 等)之永久圖案形成方法、以及藉由該永久圖案形成方法而 形成永久圖案之印刷基板。 【實施方式】 -25- 200809406 【用以實施發明之最佳形態】 (感光性組成物) 本發明之感光性組成物係至少包括(A)黏合劑、(B)聚合 性化合物、(C)光聚合起始劑,視情況需要地含有(D)熱交 聯劑、(E)彈性體、(F)苯氧樹脂、(G)增感劑、(H)其他的 成分。 前述感光性組成物之感度,在將使用該進行感光性組成 物而形成的感光層予以曝光顯像之情況下,在前述曝光時所 使用的不會改變在該曝光及顯像後之感光層中曝光部分的 厚度之光的最小能量係爲0.1〜200 mJ/cm2,更宜是0.2〜 100 mJ/cm2,特別理想是 0_5 〜50 mJ/cm2。 當最小能量係小於0.1 mJ/cm2時,則在處理步驟中就 會產生泛白,而當超過200 mJ/cm2時,則曝光所需要的時 間就會變長、處理速度就會變慢。 本文中所指的「於前述曝光時所使用的不會改變在該曝 光及顯像後的該感光層之曝光部分的厚度之光的最小能量」 (以下,也有單純地稱爲「光之最小能量」)係爲所謂之顯像 感度,例如,可以由顯示在前述之感光層曝光時之於前述曝 光中所使用的光能量(曝光量)、和藉由接著前述曝光之前述 顯像處理所產生的前述之硬化層厚度間的關係曲線(感度曲 線)而求得。 前述之硬化層之厚度係隨著前述之曝光量之增加而增 加,然後與前述之曝光前的前述感光層厚度約略相同、且約 略成爲定値。前述顯像感度係爲藉由讀取前述之硬化層厚度 -26- 200809406 約略成爲定値時之曝光量所求得之値。 本文中,前述之硬化層的厚度與前述曝光前之前述感光 層的厚度間之差爲±1微米以內時,可以視爲前述硬化層的 厚度不因曝光顯像而變化。 前述之硬化層的厚度與前述曝光前之前述感光層的厚 度之測定方法,並沒有特別地限定,可以視目的需要而適當 地選擇,舉例來說,例如可以是使用膜厚度測定裝置、表面 粗糙度測定機(例如,撒夫克姆1400D(東京精密公司製))等 進行測定之方法。 前述感光層的厚度並沒有特別地限定,係可以按照目的 需要而適當地選擇,例如,較宜爲1〜100微米,更宜是2 〜50微米,特佳是4〜30微米。 <黏合劑> 於本發明中所使用的黏合劑,係爲一種使部分構造上具 有雙酚骨架之環氧化合物(a)和含有不飽和基的單羧酸(b)之 反應物、與含有飽和基及不飽和基中之任一者的多元酸化合 物(c)起反應而得到的化合物。 一(a)環氧化合物一 前述之部分構造上具有雙酚骨架之環氧化合物(a),較 宜是以下述一般式(1)及一般式(2)中之任一者所代表之化合 物。Ar-(〇〇-C(Y1)=N-〇-Y2) General Formula (4) However, in the above general formulas (3) and (4), the Ar system represents any of an aromatic group and a heterocyclic group. Y1 represents any one of a hydrogen atom and a monovalent substituent; Y2 represents any of an aliphatic group, an aromatic group, a heterocyclic group, COY3, C02Y3, and CONY4Y5; Y3, 丫4, and Y5 represent Any of an aliphatic group, an aromatic group and a heterocyclic group; m represents an integer of 1 or more. The photosensitive composition described in any one of the above-mentioned <4>, wherein (D) the crosslinking group of the thermal crosslinking agent and (A) the acidic group of the binder The ratio is crosslinkable / acidic base = 〇. 3~3.0. The photosensitive composition described in any one of the above-mentioned, wherein the (B) polymerizable compound includes -10- from the (meth)acrylic group. 200809406 At least one of the monomers selected. The photosensitive composition according to any one of the above-mentioned, wherein the (D) thermal crosslinking agent is an epoxy compound or an oxetane compound. At least one selected from the group consisting of a polyisocyanate compound, a compound obtained by reacting a polyisocyanate compound with a block agent, and a melamine derivative. The photosensitive composition according to any one of the above-mentioned <1> to (8), further comprising (E) an elastomer. The photosensitive composition according to any one of the above-mentioned items, wherein the photosensitive composition according to any one of the above-mentioned items, further comprising (F) a phenoxy resin. The photosensitive composition according to any one of the above-mentioned items, wherein the photosensitive composition according to any one of the above-mentioned items, further comprising (G) a sensitizer. The photosensitive composition according to the above-mentioned <1>, wherein the (G) sensitizer includes a heterocyclic ring compound. The photosensitive composition according to the above <1>, wherein the heterocyclic ring compound is a thioxanthone compound. <14> A photosensitive film comprising at least a support and a photosensitive composition according to any one of the above <1> to <13> The photosensitive layer of the photosensitive film described in the above <14> wherein the photosensitive layer has a thickness of 1 to 1 μm. The photosensitive film according to any one of the above-mentioned, wherein the support system contains a synthetic resin and is transparent. The film of the photosensitive thin -11-200809406 according to any one of the above-mentioned items, wherein the support system has a long shape. The film according to any one of the above-mentioned items, which has a long shape and is wound into a cylindrical shape. The film described in any one of the above-mentioned <1>, which has a protective film on the photosensitive layer; <20> The body is characterized in that it is a photosensitive layer composed of the feeling described in any one of the above <1> to <1>><21> The photosensitive laminate described in the above <20> is formed by any one of the films of <14> to <19>. < 22 > A pattern forming apparatus characterized in that at least the light irradiation means of the light and the modulation from the light irradiation are recorded in any one of the above <20 > to < 2 1 > In the pattern forming apparatus described in the optical modulator 22 for exposing the photosensitive layer in the body, the light modulation mechanism is irradiated to the light modulation mechanism. The aforementioned light modulation is modulated by the light received by the light irradiation means. The light system modulated by the modulation mechanism faces the photosensitive layer. For example, a fine pattern at the time of development of the aforementioned photosensitive layer is then performed. <23> The pattern forming apparatus according to the above <22>, which is composed of a pattern signal generating means having a pattern control signal formed by a light modulation mechanism, and having a photosensitive thin photosensitive film. The photosensitive structure is composed of, for example, a photosensitive composition, wherein the photosensitive layer described in the photosensitive layer is light-loaded by an illuminable mechanism. The <light-illuminating mechanism changing mechanism is exposed by the light, and can be generated by generating higher information, and is modulated by the control signal generated by the signal generating means of FIG. 12-200809406. Light irradiated from a light irradiation mechanism. In the pattern forming apparatus described in the above [23], the light modulation mechanism described above is provided with the pattern signal generating means described above, and is adjusted in accordance with the control signal generated by the pattern signal generating means. The light irradiated from the light irradiation means is changed. The pattern forming apparatus according to any one of the above-mentioned <22>, wherein the light modulation mechanism is formed by having n pixel portions and capable of forming a pattern along with the pattern Information is used to control any of the aforementioned pixel portions that are less than n in a continuous arrangement among the n pixel portions. In the pattern forming apparatus according to the above <24>, by controlling the pattern elements to control any of the n pixel elements that are continuously arranged in the n pixel elements in the light modulation mechanism, The light irradiated from the light irradiation mechanism described above can be modulated at a high speed. The pattern forming device according to any one of the above-mentioned <22>, wherein the light modulation mechanism is a spatial light modulation element. The pattern forming device according to the above <25>, wherein the spatial light modulation element is a digital microlens device (DMD). The pattern forming device according to any one of the above-mentioned <24>, wherein the pixel portion is a microlens. The pattern forming apparatus according to any one of the above-mentioned items, wherein the light-irradiating means can illuminate by combining two or more lights. In the pattern forming apparatus described in <28>, the light irradiation mechanism of the 200809406, which can illuminate by combining two or more lights, is exposed to light having a deep exposure depth. . As a result, the exposure of the aforementioned photosensitive layer can be performed with extremely high definition. For example, when the above-mentioned photosensitive layer is imaged, an extremely fine pattern can be formed. The pattern forming apparatus according to any one of the above-mentioned <22>, wherein the light-irradiating mechanism has a plurality of lasers, a multimode optical fiber, and a plurality of lasers from the plurality of lasers The collective optical system in which the separately irradiated laser light is condensed to be combined with the aforementioned multimode optical fiber. In the pattern forming apparatus according to the above aspect, the light-emitting means is configured to collect laser light that is individually irradiated from the plurality of laser beams by the collective light system described above, and can combine the light beams. The above-mentioned multimode optical fiber is exposed to light having a deep exposure depth. As a result, the exposure of the aforementioned photosensitive layer can be performed with extremely high definition. For example, when the development of the photosensitive layer is performed, a very high-definition pattern 〇 <30> is formed as a permanent pattern forming method, which is characterized by including for <20> to <21> The photosensitive layer in the photosensitive laminate described in any one of the sheets is exposed. <31> The permanent pattern forming method according to the above <30>, wherein the exposure system uses laser light having a wavelength of 350 to 415 nm. The permanent pattern forming method according to any one of the above-mentioned, wherein the exposure is based on the formed pattern information to form an image pattern. The method of permanent formation as described in any one of the above-mentioned <30>, wherein the exposure system uses an exposure head, the attachment mechanism, and has received light from the foregoing a two-array pixel portion of the irradiation mechanism that emits n (however, η is a natural number of 2 or more), and an exposure head that can control the light modulation mechanism of the precursor portion in response to the pattern information, and is configured to The column direction of the pixel portion and the scanning direction of the exposure head are set to an inclination angle of 0, and the exposure head is used for the exposure head by using the pixel unit specified by the pixel specifying device. < However, the above-mentioned pixel portion of 自然 is a natural number of 2 or more; for the above-mentioned exposure head, by the pixel control mechanism, only the prime part specified by the above-mentioned using the pixel specifying unit is involved in the exposure. In the manner of controlling the pixel portion, the exposure head is moved relative to the scanning direction to expose the front layer. In the permanent pattern method described in <33>, in the above-described exposure head, by using a pixel mechanism, a secondary exposure is specified among the available pixel portions (however, Ν is 2) The above-mentioned pixel number is controlled by the pixel control unit, and the pixel unit is controlled in such a manner that only the pixel portion specified by the pixel specifying unit is used. Exposing the photosensitive layer by moving the exposure in the scanning direction to prepare a light pattern for the long-term pattern of the mounting position and the mounting angle of the exposure head, and to make the front view a predetermined structure, by underexposure (The resolution of the aforementioned pattern formed on the exposed surface of the photosensitive layer is caused by the above-mentioned figure and the step of designating the photosensitive forming portion for the crotch portion to be opposed to the exposure head as described above. -15-200809406 The variation of the variation and the concentration unevenness are uniformized. As a result, the exposure of the photosensitive layer is performed with high precision. For example, a high-definition pattern is formed by performing development of the photosensitive layer. <34> As described above <33> The permanent pattern forming method described in which the exposure system can be performed by a plurality of exposure heads, and the pixel portion specifying means is used for repeated exposure from the exposed surface formed by the plurality of exposure heads. In the pixel part of the exposure area of the head of the genus, the N-exposure is specified in the aforementioned inter-header connection area. In the permanent pattern forming method described in <34>, the exposure is performed by a plurality of exposure heads, and the pixel specifying means is used from a plurality of the exposure heads. In the pixel portion participating in the exposure of the inter-head contact region of the repeatedly exposed exposure surface on the exposed surface, the pixel portion used in the inter-head contact region for realizing N exposure is designated, thereby The phenomenon of variation in resolution and density unevenness of the pattern formed on the exposed surface of the photosensitive layer due to variations in the mounting position and the mounting angle of the exposure head are uniformized. As a result, the exposure of the photosensitive layer is obtained. The high-definition pattern is formed by, for example, forming a high-definition pattern by performing the development of the photosensitive layer. [35] The method of forming a permanent pattern as described in the above <34>, wherein the exposure system can be plural An exposure head is used, and the means for specifying the repeat exposure range of the exposed surface formed by the plurality of the aforementioned exposure heads is specified by the pixel portion designation-16-200809406 In the pixel portion participating in the exposure other than the inter-connected region, the pixel portion used for realizing N exposure in the region other than the inter-head contact region is specified. The <35 > In the permanent pattern forming method, the exposure system can be performed by a plurality of exposure heads, and the pixel portion specifying means is used to connect the inter-head contact regions of the repeated exposure range on the exposed surface formed by the plurality of the exposure heads. In the pixel portion participating in the exposure, the pixel portion used to realize the N exposure in the region other than the inter-head contact region may be specified, and the mounting position and the mounting angle of the exposure head may be used. The variation of the resolution of the pattern formed on the exposed surface of the photosensitive layer and the density unevenness are uniformized by the deviation. As a result, the exposure of the aforementioned photosensitive layer is performed with high precision, for example, and then a high-definition pattern is formed by performing development of the above-mentioned photosensitive layer. The permanent pattern forming method according to any one of the above-mentioned, wherein the setting of the inclination angle 0 is set to have a relationship conforming to 0 0 0 ideal, and the foregoing 0 ideal, the number N of N exposures, the number s of the direction of the pixel portion, the interval P of the direction of the pixel portion, and the orientation perpendicular to the exposure head when the exposure head is tilted The distance between the column directions of the pixel portions in the direction of the sweep direction is in accordance with the following formula: s psine idealg N 5 〇 < 37 > as described above < 33 > to < 36 > The permanent pattern -17· 200809406 described in the item is a method in which the N-time exposure N is a natural number of 3 or more. In the permanent pattern forming method described in <3>>, the multi-drawing is performed by making N of the N exposures a natural number of 3 or more. As a result, due to the effect of the correction, the variation of the resolution and the density unevenness of the pattern formed on the exposed surface of the photosensitive layer due to the variation in the mounting position and the mounting angle of the exposure head can be made more precise. The ground is uniform. The permanent pattern forming method according to any one of the above-mentioned, wherein the use of the pixel portion specifying means includes: a spot position detecting means, a mechanism for detecting a position of a spot on the exposed surface as a pixel unit constituting an exposure range on the exposed surface by the pixel portion; and a pixel selection mechanism based on the spot The result detected by the position detecting means selects the mechanism for realizing the pixel portion used for N exposures. The permanent pattern forming method according to any one of the above-mentioned <33>, wherein the pixel specifying means is used to specify the use of the N exposures in units of rows. Use the graphics section. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the spot position detecting means is defined based on the detected at least two spot positions. When the exposure head is tilted, the direction of the light spot on the exposed surface is substantially 0° with the scanning direction of the exposure head, and the pixel selection mechanism is configured to absorb the aforementioned substantial tilt. Angle 0, -1 8 - 200809406 Select the use of the pixel unit in a way that sets the error between the tilt angles of 0. The permanent pattern forming method according to the above <40>, wherein the substantial tilt angle Θ ' is a direction in which the light spots on the exposed surface are in a state in which the exposure head is tilted, and the exposure is as described above. Any one of a plurality of substantial tilt angles, a central 値, a maximum 値, and a minimum 形成 formed by the scanning direction of the head. The permanent pattern forming method according to any one of the above-mentioned <38>, wherein the pixel portion selecting mechanism derives based on the substantial tilt angle 0' to satisfy t tan 0, =N ( However, the N-line represents the natural number t' of the relationship of the number N of N exposures, and is selected from the first row of the pixel parts in which m rows (only m is a natural number of 2 or more) are arranged. The aforementioned pixel portion of the T-th row is used as the pixel portion. The permanent pattern forming method according to any one of the above-mentioned <38>, wherein the pixel portion selecting mechanism derives based on the substantial tilt angle 0' to satisfy tta η 0 ' = N ( However, the N number represents the number of times of N exposures Ν) is close to the natural number of t Τ 'will be ranked in the pixel part of m rows (except that m is a natural number of 2 or more) (T+ 1) The aforementioned pixel portion that is lined up to the mth line is defined as not using the pixel portion, and the above-described pixel portion other than the pixel portion is selected as the used pixel portion. The method of forming a permanent pattern according to any one of the above-mentioned <38>, wherein the pixel selection mechanism is at least included in the plurality of pixels by -19-200809406 (1) in the region of the repeated exposure range on the exposed surface to be formed, the mechanism for using the pixel portion is selected in such a manner as to minimize the total area of the exposure for the ideal N exposures and the area of the underexposed region. (2) Selecting the mechanism using the pixel part in such a manner that the number of pixel units of the overexposed area for the ideal N exposure is equal to the number of pixel units of the underexposed area, (3) according to the ideal N times Selecting the mechanism using the pixel portion in such a manner that the area of the exposed excessive exposure area is minimized and the underexposed area is not generated, and (4) minimizing the area of the underexposed area for the ideal N exposures, and not A method of generating an overexposed area to select any of the mechanisms using the pixel part. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the pixel portion selecting means is on an exposed surface formed by a plurality of pixel portions. (1) in the connection region between the heads of the repeated exposure range, in such a manner as to minimize the total area of the exposure for the ideal N exposures and the area of the underexposed regions, from the exposure regarding the aforementioned inter-head region The pixel part is defined to not use the pixel part, and the above-mentioned pixel part other than the pixel part is selected as the mechanism using the pixel part, -20- 200809406 (2) according to the ideal N times The number of pixel units of the exposed overexposed area is equal to the number of pixel units of the underexposed area, and the pixel portion is defined from the pixel portion of the exposure of the inter-head contact area, and the non-use map is selected. The pixel portion other than the element portion is used as a mechanism using the pixel portion, and (3) the method is such that the area of the excessive exposure region for the ideal N exposure is minimized, and the underexposure region is not generated. The pixel portion of the exposure in the inter-header connection region defines a non-use pixel portion, and selects the pixel portion other than the pixel portion as the mechanism for using the pixel portion, and (4) The method of defining the non-use of the pixel portion from the pixel portion of the exposure of the inter-head contact region is made such that the area of the underexposed region of the ideal N-time exposure is minimized and the overexposed region is not generated. The above-described pixel portion other than the pixel portion is not used as the mechanism for using the pixel portion. < 46 > The method of forming a permanent pattern as described in the above <45>, wherein the pixel portion is not defined in units of rows. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the pixel portion is used for specifying the use of the pixel portion specifying means. Among the above-described pixel portions, reference exposure is performed using only the aforementioned pixel portions constituting each of the (N-1) columns of the pixel portion - 21 - 200809406 with respect to N for N exposures. In the permanent pattern forming method described in the above-mentioned <4>>, in order to designate the use of the pixel portion in the pixel specifying unit, among the aforementioned pixel portions that are usable, the N exposure is used. In the case of N, only the pixel portion constituting the pixel portion of each (N -1) column is used for reference exposure, and a simple pixel portion which is slightly drawn once can be obtained. As a result, the aforementioned pixel portion in the aforementioned inter-head contact region can be easily specified. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the use of the pixel portion in the pixel specifying unit is used as described above. In the pixel portion, reference light exposure is performed using only the pixel portion constituting the pixel portion line per 1/N row with respect to N of the N exposures. In the permanent pattern forming method according to the above [48], in order to specify the use of the pixel portion in the pixel specifying unit, among the pixel portions that are usable, the N exposure is used. N, only the pixel portion constituting the pixel portion of each 1/N row is used for reference exposure, and a simple pixel portion of the drawing is obtained once. As a result, the aforementioned pixel portion in the aforementioned inter-head contact region can be easily specified. The permanent pattern forming method according to any one of the above-mentioned, wherein the pixel specifying mechanism has slits and light as a spot position detecting mechanism. The detector and the calculation device connected to the photodetector as the pixel selection mechanism. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the N-time exposure is N-series 3 or more and 7 or less from -22 to 200809406. The permanent pattern forming method according to any one of the above-mentioned, wherein the light modulation mechanism further has pattern signal generation for generating a control signal based on the formed pattern information. The mechanism is configured to modulate the light irradiated from the light irradiation means in accordance with a control signal generated by the pattern signal generating means. In the permanent pattern forming method according to the above, the optical modulation means includes the pattern signal generating means described above so as to be modulated by a control signal generated by the pattern signal generating means. The light irradiated by the aforementioned light irradiation means. The permanent pattern forming method according to the above <51>, wherein the optical modulation mechanism is a spatial light modulation element. <53> The permanent pattern forming method according to the above <52>, wherein the spatial light modulation element is a digital microlens device (DMD). The method of forming a permanent pattern according to any one of the above-mentioned <33>, wherein the pixel portion is a microlens. The method of forming a permanent pattern according to any one of the above-mentioned <33>, which has a predetermined portion of a pattern indicating pattern information, and a The conversion means for converting the pattern information described above is used in such a manner that the size of the corresponding portion realized by the pixel portion is the same. The method of forming a permanent pattern according to any one of the above-mentioned <33>, wherein the light-irradiating means can illuminate by combining two or more lights. In the method of permanent pattern formation -23-200809406 described in the above-mentioned <56>, since the light irradiation mechanism can illuminate two or more light beams, exposure light having a deep depth of focus can be exposed for exposure. . As a result, the exposure of the photosensitive film is performed extremely finely, and thereafter, an extremely high-definition pattern is formed by performing development of the photosensitive layer. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the light-irradiating mechanism has a plurality of lasers, a multimode optical fiber, and a plurality of lasers from the plurality of lasers The laser light that is irradiated separately is collected to be combined with the aforementioned multimode fiber. In the method of forming a permanent pattern according to the above <57>, the laser light irradiated by the plurality of lasers can be condensed by the light irradiation means to be combined with the multimode described above. A combination optical system in which optical fibers are combined, and thus exposure light having a deep depth of focus can be exposed for exposure. As a result, the exposure of the photosensitive film is performed extremely finely, and then an extremely high-definition pattern is formed by performing development of the photosensitive layer. The method of forming a permanent pattern according to any one of the above-mentioned items, wherein the photosensitive layer is subjected to development processing after exposure. In the permanent pattern forming method described in <58>, after performing the above-described exposure, a developing process is performed on the photosensitive layer to form a high-definition pattern. The permanent pattern forming method according to the above <58>, wherein the permanent pattern is formed after the development. <60> A permanent pattern formed by the permanent pattern forming method as described in any one of the above-mentioned <3> to -24-200809406 <5> The permanent pattern described in the above <60> is formed by the above-described pattern forming method, and thus has excellent chemical resistance, surface hardness, heat resistance, and the like, and can be effectively used for high definition. High-density mounting of semiconductors, multilayer wiring boards, and stacked wiring boards. <61> The permanent pattern described in the above <60>, which is at least one of a protective film, an interlayer insulating film, and a solder resist pattern. The permanent pattern described in <6 1 > is formed of at least one of a protective film, an interlayer insulating film, and a solder resist pattern, so that the film can have insulation properties, heat resistance, and the like. Protect the wiring to avoid impact and bending from the outside. And a permanent pattern forming method according to any one of the above-mentioned <30> to <59>, wherein a permanent pattern is formed. [Effect of the Invention] When the present invention is utilized, the problem of the conventional use can be solved, and a permanent pattern formation such as solder resistance can be provided, and even in the form of the above-mentioned film, the sensitivity is good, and the storage is good. A photosensitive composition excellent in properties and handleability, a photosensitive film, and a permanent pattern forming method capable of forming a high-definition permanent pattern (a protective film, an interlayer insulating film, a solder resist pattern, etc.) in a semiconductor field with good efficiency, and A printed circuit board in which a permanent pattern is formed by the permanent pattern forming method. [Embodiment] -25-200809406 [Best form for carrying out the invention] (Photosensitive composition) The photosensitive composition of the present invention includes at least (A) a binder, (B) a polymerizable compound, and (C) The photopolymerization initiator optionally contains (D) a thermal crosslinking agent, (E) an elastomer, (F) a phenoxy resin, (G) a sensitizer, and (H) other components. The sensitivity of the photosensitive composition is such that when the photosensitive layer formed by using the photosensitive composition is subjected to exposure development, the photosensitive layer used in the exposure does not change the photosensitive layer after the exposure and development. The minimum energy of the light of the thickness of the medium exposed portion is 0.1 to 200 mJ/cm 2 , more preferably 0.2 to 100 mJ/cm 2 , and particularly preferably 0 to 5 to 50 mJ/cm 2 . When the minimum energy system is less than 0.1 mJ/cm2, whitening occurs in the processing step, and when it exceeds 200 mJ/cm2, the time required for exposure becomes longer and the processing speed becomes slower. As used herein, "the minimum energy of light used in the above exposure does not change the thickness of the exposed portion of the photosensitive layer after exposure and development" (hereinafter, simply referred to as "the minimum of light" The energy ") is a so-called development sensitivity, for example, the light energy (exposure amount) used in the exposure described above when the photosensitive layer is exposed, and the aforementioned development processing by the exposure described above. The resulting relationship between the thicknesses of the hardened layers (sensitivity curves) was obtained. The thickness of the hardened layer described above increases as the amount of exposure described above increases, and is then approximately the same as the thickness of the photosensitive layer before exposure, and is approximately constant. The above-mentioned development sensitivity is obtained by reading the aforementioned hardened layer thickness -26-200809406 which is approximately the exposure amount at the time of the fixed enthalpy. Here, when the difference between the thickness of the hardened layer and the thickness of the photosensitive layer before the exposure is within ±1 μm, it can be considered that the thickness of the hardened layer is not changed by exposure development. The method for measuring the thickness of the hardened layer and the thickness of the photosensitive layer before the exposure is not particularly limited, and may be appropriately selected depending on the purpose, and for example, may be a film thickness measuring device or a rough surface. A method of measuring by a measuring machine (for example, Safkheim 1400D (manufactured by Tokyo Seimitsu Co., Ltd.)). The thickness of the photosensitive layer is not particularly limited and may be appropriately selected according to the purpose, and is, for example, preferably 1 to 100 μm, more preferably 2 to 50 μm, and particularly preferably 4 to 30 μm. <Binder> The binder used in the present invention is a reaction product of an epoxy compound (a) partially having a bisphenol skeleton and a monocarboxylic acid (b) having an unsaturated group, A compound obtained by reacting with a polybasic acid compound (c) containing either a saturated group or an unsaturated group. An epoxy compound (a) having a bisphenol skeleton as a part of the above-mentioned epoxy compound, preferably a compound represented by any one of the following general formula (1) and general formula (2) .
一般式(1) -27- 200809406 但,在前述之一般式(1)中,X係代表氫原子及縮水甘油 基中之任一者;R係代表亞甲基及異亞丙基中之任一者;η 係代表1以上之整數。 前述之以一般式(1)所代表的X爲如下述構造式所表示 的縮水甘油基之雙酚Α型環氧樹脂或雙酚F型環氧樹脂,例 如,可以是藉由使以下述一般式(5)所表示的雙酚A型環氧 樹脂或雙酚F型環氧樹脂之羥基與表氯醇起反應而得到。爲 了促進羥基與表氯醇之反應,較宜是在50〜12(TC之反應溫 度、鹼金屬氫氧化物之存在下、於二甲基甲醯胺、二甲基乙 醯胺、二甲亞颯等之極性有機溶劑中進行反應。當前述之反 應溫度小於5 0 °C時,會有反應變慢的情況;當反應溫度超 過1 20°C時,會有時常產生副反應的情況;因而,彼等不是 理想的。 -C H 2_C H-C Η 9 \〇/ 2General formula (1) -27- 200809406 However, in the above general formula (1), X represents either a hydrogen atom or a glycidyl group; and R represents a methylene group and an isopropylidene group. One; the η system represents an integer of 1 or more. The above-mentioned X represented by the general formula (1) is a glycidyl-based bisphenol fluorene-type epoxy resin or a bisphenol F-type epoxy resin represented by the following structural formula, and may be, for example, The hydroxyl group of the bisphenol A type epoxy resin or the bisphenol F type epoxy resin represented by the formula (5) is obtained by reacting with epichlorohydrin. In order to promote the reaction of a hydroxyl group with epichlorohydrin, it is preferably at 50 to 12 (the reaction temperature of TC, in the presence of an alkali metal hydroxide, in dimethylformamide, dimethylacetamide, dimethylene). The reaction is carried out in a polar organic solvent such as hydrazine. When the above reaction temperature is less than 50 ° C, the reaction becomes slow; when the reaction temperature exceeds 1200 ° C, a side reaction often occurs; They are not ideal. -CH 2_C HC Η 9 \〇/ 2
-28- 200809406 但’在前述之一般式(5)中,R係代表氫原子及甲基中之 任一者;η係代表1以上之整數。-28- 200809406 However, in the above general formula (5), R represents any one of a hydrogen atom and a methyl group; and η represents an integer of 1 or more.
一般式(2) 但,在前述之一般式(2)中,R1係代表氫原子及甲基中 之任一者·’ R2及R3係代表伸烷基;m及η係代表m + η爲2 〜50的正整數;ρ係代表正整數。 另外,前述之m + n較宜是2〜30的正整數,更宜是2 〜20的正整數。又,前述之ρ較宜是1〜25之整數,更宜 是1〜15之整數,特佳爲1〜1〇之整數。 前述之以一般式(2)所代表的化合物(聚合物)係由下述 之重複單位(1a)及單位(1b)所構成。另外,該聚合物之末端 可以是單位(1 a)及單位(1 b)中之任一者;在末端爲單位(1 a) 的情況下,雙酚中的羥基可以爲縮水甘油基所取代。在該單 位(1a)及單位(1b)中,R1係代表氫原子及甲基中之任一者; R2及R3係代表伸烷基。In the above general formula (2), R1 represents either a hydrogen atom or a methyl group. 'R2 and R3 represent an alkylene group; m and η represent m + η A positive integer of 2 to 50; the ρ system represents a positive integer. Further, the above m + n is preferably a positive integer of 2 to 30, and more preferably a positive integer of 2 to 20. Further, the above ρ is preferably an integer of 1 to 25, more preferably an integer of 1 to 15, and particularly preferably an integer of 1 to 1 Å. The compound (polymer) represented by the general formula (2) described above is composed of the following repeating unit (1a) and unit (1b). Further, the terminal of the polymer may be any one of units (1 a) and units (1 b); in the case of a terminal unit (1 a), the hydroxyl group in the bisphenol may be substituted with a glycidyl group. . In the unit (1a) and the unit (1b), R1 represents any one of a hydrogen atom and a methyl group; and R2 and R3 represent an alkylene group.
(1b) -29- 200809406 一(b)含有不飽和基的單羧酸一 前述之含有不飽和基的單羧酸,舉例來說,例如,其可 以是丙烯酸、丙烯酸之二聚物、甲基丙烯酸、呋喃甲基 丙烯酸、/3-苯乙烯基丙烯酸、桂皮酸、巴豆酸、α-氰基桂 皮酸等之含有乙烯基的單羧酸;又,舉例來說,例如,含有 羥基的丙烯酸酯、與飽和或不飽和二元酸酐之反應生成物的 半酯化合物、含有乙烯基的單縮水甘油醚或含有乙烯基的單 縮水甘油酯、與飽和或不飽和二元酸酐之反應生成物的半酯 化合物。此等之半酯化合物係可以藉由使含有羥基的丙烯酸 酯、含有乙烯基的單縮水甘油醚或含有乙烯基的單縮水甘油 酯、與飽和或不飽和二元酸酐,以等莫耳比進行反應而得到 。此等之含有乙烯基的單羧酸,係可以單獨使用1種,也可 以倂用2種以上。 前述之可用於含有乙烯基的單羧酸之一例的上述半酯 化合物之合成的含有羥基的丙烯酸酯、含有乙烯基的單縮水 甘油醚、含有乙烯基的單縮水甘油酯,舉例來說,例如,其 可以是羥乙基丙烯酸酯、羥乙基甲基丙烯酸酯、羥丙基丙烯 酸酯、羥丙基甲基丙烯酸酯、羥丁基丙烯酸酯、羥丁基甲基 丙烯酸酯、聚乙二醇單丙烯酸酯、聚乙二醇單甲基丙烯酸酯 、三羥甲基丙烷二丙烯酸酯、三羥甲基丙烷二甲基丙烯酸酯 、季戊四醇四丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊 四醇五丙烯酸酯、二季戊四醇五甲基丙烯酸酯、縮水甘油基 丙烯酸酯、縮水甘油基甲基丙烯酸酯等。 前述之可用於半酯化合物之合成的飽和或不飽和二元 -30- 200809406 酸酐,舉例來說,例如,其可以是琥珀酸酐、馬來酸酐、四 氫酞酸酐、酞酸酐、甲基四氫酞酸酐、乙基四氫酞酸酐、六 氫酞酸酐、甲基六氫酞酸酐、乙基六氫酞酸酐、伊康酸酐等 〇 在前述之環氧樹脂和前述之含有乙烯基的單羧酸之反 應中,相對於前述之環氧樹脂的1當量之環氧基而言,較宜 是以使前述之含有乙烯基的單羧酸成爲0.8〜1.05當量的比 例來進行反應,更宜是0.9〜1.0當量。 前述之環氧樹脂和前述之含有乙烯基的單羧酸,係可以 使之溶解於有機溶劑再進行反應;有機溶劑,舉例來說,例 如,其可以是甲基乙基酮、環己酮等之酮類;甲苯、二甲苯 、四甲基苯等之芳香族烴類;甲基溶纖素、乙基溶纖素、甲 基卡必醇、丁基卡必醇、丙二醇單甲基醚、二丙二醇單乙基 醚、二丙二醇二乙基醚、三乙二醇單乙基醚等之二醇醚類; 醋酸乙酯、醋酸丁酯、丁基溶纖素乙酸酯、卡必醇乙酸酯等 之酯類;辛烷、癸烷等之脂肪烴類;石油醚、石油輕油、氫 化石油輕油、溶劑輕油等之石油系溶劑等。 更且,爲了促進前述之反應,則較宜使用觸媒。前述之 觸媒,舉例來說,例如,其可以是三乙胺、苄基甲胺、甲基 三乙基氯化錢、苄基三甲基氯化銨、苄基三甲基溴化銨、苄 基三甲基甲基氯化銨、三苯基膦等。 前述觸媒之使用量,相對於前述之環氧樹脂和前述之含 有乙烯基的單羧酸的總量100質量份而言,較宜是0.1〜10 質量份。 -31- 200809406 又,爲了防止在反應中聚合之目的·,較宜是使用聚合禁 止劑。聚合禁止劑,舉例來說,例如,其可以是氫醌、甲基 氫醌、氫醌單甲基醚、兒茶酚、焦掊酚等。 前述聚合禁止劑之使用量,相對於前述之環氧樹脂和前 述之含有乙烯基的單羧酸的總量100質量份而言,較宜是 0.01〜1質量份。前述之反應溫度,較宜是60〜150 °c,更 宜是80〜1 20°C。 視情況需要,前述之含有乙烯基的單羧酸也可以和偏苯 三酸酐、均苯四甲酸酐、二苯甲酮四羧酸酐、聯苯四羧酸酐 等之多元酸酐一起倂用。 一(c)含有飽和基或不飽和基的多元酸化合物一 前述之含有飽和基或不飽和基的多元酸酐,舉例來說, 例如,其可以是琥珀酸酐、馬來酸酐、四氫酞酸酐、酞酸酐 、甲基四氫酞酸酐、乙基四氫酞酸酐、六氫酞酸酐、甲基六 氫酞酸酐、乙基六氫酞酸酐、伊康酸酐等。 在前述之反應生成物和前述之含有飽和基或不飽和基 的多元酸酐之反應中,藉由使1當量的反應生成物中之羥基 ,相對於〇.1〜1.〇當量之前述含有飽和基或不飽和基的多 元酸酐來進行反應,即可以調整前述黏合劑之酸價。前述黏 合劑之酸價較宜是30〜150毫克KOH/克,更宜是50〜120 毫克KOH/克。當該酸價小於30毫克KOH/克時,則會降低 光硬化性樹脂組成物對於稀鹼溶液的溶解性;而當超過1 5 0 毫克KOH/克時,則硬化膜之電氣特性就會有下降之情況。 前述反應生成物和前述含有飽和基或不飽和基的多元酸酐 -32- 200809406 間的反應溫度,較宜是60〜120°C。 一其他的黏合劑一 可以和前述之黏合劑一起倂用的黏合劑,較宜是在側鏈 上含有酸性基及乙烯性不飽和鍵之高分子化合物。前述之酸 性基,舉例來說,例如,其可以是羧基、磷酸基、磺酸基等 :然而,從原料之取得等觀點來看,較宜是羧基。 前述之黏合劑,較宜是不溶於水、且爲藉由鹼性水溶液 而膨脹或溶解之化合物。 又,前述之黏合劑係可以使用在分子內至少有1個可聚 合雙鍵,例如,可以使用(甲基)丙烯酸酯或(甲基)丙烯醯胺 等之丙烯酸基、羧酸之乙烯基酯、乙烯基醚、烯丙基醚等之 各種聚合性雙鍵。更具體而言,舉例來說,例如其可以是在 含有當做酸性基之羧基的丙烯酸樹脂上,附加含環狀醚基之 聚合性化合物而加成得到之化合物等,例如,可以附加丙烯 酸縮水甘油酯、甲基丙烯酸縮水甘油酯、桂皮酸等之不飽和 酸的縮水甘油酯、或脂環式環氧基(例如,在同一分子中具 有環己烯氧化物等之環氧基)和(甲基)丙烯醯基之化合物等 的含環氧基聚合性化合物等。又,舉例來說,例如其可以是 在含有酸性基和羥基之丙烯酸樹脂上附加(甲基)丙烯酸聚 異氰酸酯乙酯等之含有聚異氰酸酯基的聚合性化合物而加 成得到的化合物、在含有酐基的丙烯酸樹脂上附加(甲基)丙 烯酸羥基烷酯等之含有羥基的聚合性化合物而加成得到的 化合物等。又,將甲基丙烯酸縮水甘油酯等之含有環狀醚基 聚合性化合物、和(甲基)丙烯醯基烷酯等之乙烯基單體予以 -33 - 200809406 共聚合並將(甲基)丙烯酸附加於側鏈之環氧基上而加成得 到的化合物。 此等的例子,舉例來說,例如,專利2 7 6 3 7 7 5號公報、 特開平3 — 172301號公報、特開2000— 232264號公報等。 < (B)聚合性化合物> 前述之聚合性化合物並沒有特別地限定,雖然可以按照 目的需要而適當地選擇,然而較宜是在分子中具有至少1個 可以加成聚合的基、且常壓沸點爲1 0 0 °C以上之化合物,舉 例來說,例如比較適合者爲從具有(甲基)丙烯酸基之單體中 所選取的至少1種。 前述之具有(甲基)丙烯酸基之單體並沒有特別地限 定,可以按照目的需要而適當地選擇;舉例來說,例如其可 以是聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸 酯、(甲基)丙烯酸苯氧基乙酯等之單官能基丙烯酸酯或單官 能基甲基丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯、聚丙二醇 二(甲基)丙烯酸酯、三羥甲基乙烷三丙烯酸酯、三羥甲基丙 烷三丙烯酸酯、三羥曱基丙烷二丙烯酸酯、新戊二醇二(甲 基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、季戊四醇三(甲 基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五 (甲基)丙烯酸酯、己烷二醇二(甲基)丙烯酸酯、三羥甲基丙 烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸 酯、三(丙烯醯氧基乙基)三聚氰酸酯、甘油三(甲基)丙烯酸 酯、三羥甲基丙烷、甘油、雙酚等之於多官能基醇上進行環 氧乙烷基或環氧丙烷之加成反應後經(甲基)丙烯酸酯化之 -34- 200809406 物;於特公昭48— 41708號、特公昭50 - 6034號、特開昭 51 - 371 93號等各公報上所記載之丙烯酸脲酯類;於特開昭 48 — 641 83 號、特公昭 49 — 431 91 號、特公昭 52 - 30490 號等各公報上所記載之聚酯丙烯酸酯類;環氧樹脂與(甲基) 丙烯酸之反應生成物的環氧基丙烯酸酯類等之多官能基丙 烯酸酯或甲基丙烯酸酯等。此等之中,特佳爲三羥甲基丙烷 三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四 醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯。 在前述之感光性組成物固體成分中,前述聚合性化合物 之固體成分含量較宜是5〜50質量%,更佳爲10〜40質量 %。當該固體成分含量爲小於5質量%時,就會產生顯像性 惡化、曝光感度降低等之問題;而當超過5 0質量%時,就 會有感光層之黏著性變得過強的情形。 < (C)光聚合起始劑〉 光聚合起始劑較宜是從醯基氧化膦化合物及肟衍生物 中所選取的化合物,特佳爲肟衍生物。又,視情況需要,也 可以含有其他的光聚合起始劑。 一醯基氧化膦化合物一 ‘ 醯基氧化膦化合物,舉例來說,例如,其可以是單醯基 氧化膦、雙醯基氧化膦、三醯基氧化膦化合物。 前述之醯基氧化膦化合物,舉例來說,例如,合適者爲 以下述一般式(6)所代表的化合物。 0 0 II II … R11 — P — c 一R13 —般式(6) R12 -35- 200809406 但’在前述之一般式(6)中,R11及中R1 2係分別獨立地 代表碳原子數爲1〜12之院基、卞基、氨原子、歯素原子、 經由碳原子數爲1〜8之烷基取代1〜4次的苯基、經由碳原 子數爲1〜8之烷氧基取代1〜4次的苯基、環己基、及以下 述式(i)中的COR13所代表的基中之任一者,更且r11也可以 代表一 OR14及以下述式(i)所代表的基中之任一者。r1 3係代 表氫原子、碳原子數爲1〜8之烷基、碳原子數爲1〜8之烷 氧基、碳原子數爲1〜8之烷硫基、經由鹵原子取代1〜4次 的苯基、及以下述式(M)所代表的基中之任一者;R14係代表 碳原子數爲1〜8之烷基、苯基及苄基中之任一者。γ係代 表伸苯基、碳原子數爲1〜12之烯基及環烯基中之任一者, x係代表碳原子數爲1〜8之烯基、及以下述式(hi)所代表的 基中之任一者。 〇 0(1b) -29- 200809406 A (b) monocarboxylic acid containing an unsaturated group - the above monocarboxylic acid containing an unsaturated group, for example, it may be acrylic acid, dimer of acrylic acid, methyl group a vinyl-containing monocarboxylic acid such as acrylic acid, furan methacrylic acid, /3-styrylacrylic acid, cinnamic acid, crotonic acid or α-cyano cinnamic acid; and, for example,, for example, a hydroxy group-containing acrylate a half ester compound of a reaction product with a saturated or unsaturated dibasic acid anhydride, a monoglycidyl ether containing a vinyl group or a monoglycidyl ester containing a vinyl group, and a reaction product with a saturated or unsaturated dibasic acid anhydride Ester compound. These semi-ester compounds can be obtained by using a hydroxyl group-containing acrylate, a vinyl group-containing monoglycidyl ether or a vinyl group-containing monoglycidyl ester, and a saturated or unsaturated dibasic acid anhydride in an equimolar ratio. Obtained by reaction. These monocarboxylic acids containing a vinyl group may be used singly or in combination of two or more. The foregoing may be used for the synthesis of a hydroxyl group-containing acrylate, a vinyl group-containing monoglycidyl ether, a vinyl group-containing monoglycidyl ester, and the like, for example, of a vinyl group-containing monocarboxylic acid, for example, for example, It may be hydroxyethyl acrylate, hydroxyethyl methacrylate, hydroxypropyl acrylate, hydroxypropyl methacrylate, hydroxybutyl acrylate, hydroxybutyl methacrylate, polyethylene glycol monoacrylic acid Ester, polyethylene glycol monomethacrylate, trimethylolpropane diacrylate, trimethylolpropane dimethacrylate, pentaerythritol tetraacrylate, pentaerythritol tetramethacrylate, dipentaerythritol pentaacrylate, Dipentaerythritol pentamethyl acrylate, glycidyl acrylate, glycidyl methacrylate, and the like. The above-mentioned saturated or unsaturated binary -30-200809406 acid anhydride which can be used for the synthesis of a half ester compound, for example, it may be succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrogen Anthracene anhydride, ethyl tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyl hexahydrophthalic anhydride, ethyl hexahydrophthalic anhydride, and itaconic anhydride, etc., in the foregoing epoxy resin and the aforementioned vinyl-containing monocarboxylic acid In the reaction, it is preferred to carry out the reaction in an amount of from 0.8 to 1.05 equivalents per 1 equivalent of the epoxy group of the epoxy resin, and it is more preferably 0.9. ~1.0 equivalents. The above epoxy resin and the above-mentioned monocarboxylic acid containing a vinyl group may be dissolved in an organic solvent to carry out a reaction; and the organic solvent may, for example, be methyl ethyl ketone or cyclohexanone. Ketones; aromatic hydrocarbons such as toluene, xylene, tetramethylbenzene; methyl cellosolve, ethyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, a glycol ether such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether or triethylene glycol monoethyl ether; ethyl acetate, butyl acetate, butyl cellosolve acetate, carbitol acetate Esters such as esters; aliphatic hydrocarbons such as octane and decane; petroleum solvents such as petroleum ether, petroleum gas oil, hydrogenated petroleum gas oil, solvent light oil, and the like. Further, in order to promote the aforementioned reaction, it is preferred to use a catalyst. The aforementioned catalyst may be, for example, triethylamine, benzylmethylamine, methyltriethylchlorohydrin, benzyltrimethylammonium chloride or benzyltrimethylammonium bromide, for example. Benzyltrimethylmethylammonium chloride, triphenylphosphine, and the like. The amount of the catalyst to be used is preferably 0.1 to 10 parts by mass based on 100 parts by mass of the total of the epoxy resin and the vinyl group-containing monocarboxylic acid. -31- 200809406 Further, in order to prevent the purpose of polymerization in the reaction, it is preferred to use a polymerization inhibitor. The polymerization inhibiting agent may, for example, be hydroquinone, methylhydroquinone, hydroquinone monomethyl ether, catechol, pyrogallol or the like. The amount of the polymerization inhibiting agent to be used is preferably 0.01 to 1 part by mass based on 100 parts by mass of the total amount of the epoxy resin and the above-mentioned vinyl group-containing monocarboxylic acid. The above reaction temperature is preferably 60 to 150 ° C, more preferably 80 to 1 20 ° C. The above-mentioned vinyl group-containing monocarboxylic acid may be used together with a polybasic acid anhydride such as trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride or biphenyltetracarboxylic anhydride, as the case requires. (c) a polybasic acid compound containing a saturated group or an unsaturated group - the above-mentioned polybasic acid anhydride containing a saturated group or an unsaturated group, for example, it may be succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, Anthracene anhydride, methyltetrahydrophthalic anhydride, ethyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, ethylhexahydrophthalic anhydride, itaconic anhydride, and the like. In the reaction of the above reaction product with the above-mentioned polybasic acid anhydride containing a saturated group or an unsaturated group, by saturating the hydroxyl group in one equivalent of the reaction product with respect to the above-mentioned oxime equivalent of 0.1 to 1. The reaction is carried out by using a polybasic acid anhydride having a base or an unsaturated group, that is, the acid value of the aforementioned binder can be adjusted. The acid value of the above binder is preferably from 30 to 150 mg KOH/g, more preferably from 50 to 120 mg KOH/g. When the acid value is less than 30 mg KOH/g, the solubility of the photocurable resin composition for a dilute alkali solution is lowered; and when it exceeds 150 mg KOH/g, the electrical properties of the cured film are The situation of decline. The reaction temperature between the above reaction product and the above-mentioned saturated or unsaturated group-containing polybasic acid anhydride -32 to 200809406 is preferably 60 to 120 °C. A further adhesive, a binder which can be used together with the above-mentioned binder, is preferably a polymer compound having an acidic group and an ethylenically unsaturated bond in a side chain. For example, the acid group may be a carboxyl group, a phosphoric acid group, a sulfonic acid group or the like. However, it is preferably a carboxyl group from the viewpoint of obtaining a raw material or the like. The above-mentioned binder is preferably a compound which is insoluble in water and which is swollen or dissolved by an aqueous alkaline solution. Further, as the binder, at least one polymerizable double bond may be used in the molecule. For example, an acrylic group such as (meth) acrylate or (meth) acrylamide or a vinyl ester of a carboxylic acid may be used. Various polymerizable double bonds such as vinyl ether and allyl ether. More specifically, for example, it may be a compound obtained by adding a cyclic ether group-containing polymerizable compound to an acrylic resin containing a carboxyl group as an acidic group, and the like, for example, glycidol acrylate may be added. a glycidyl ester of an unsaturated acid such as an ester, glycidyl methacrylate or cinnamic acid, or an alicyclic epoxy group (for example, an epoxy group having a cyclohexene oxide or the like in the same molecule) and (a) An epoxy group-containing polymerizable compound or the like which is a compound of an acrylonitrile group. Further, for example, it may be a compound obtained by adding a polyisocyanate group-containing polymerizable compound such as (meth)acrylic acid polyisocyanate ethyl ester to an acrylic resin containing an acidic group and a hydroxyl group, and containing an anhydride. A compound obtained by adding a hydroxyl group-containing polymerizable compound such as a hydroxyalkyl (meth)acrylate to the acrylic resin is added to the base resin. Further, a vinyl ether-containing polymerizable compound such as glycidyl methacrylate or a vinyl monomer such as (meth) propylene decyl alkyl ester is copolymerized with -33 - 200809406 and (meth)acrylic acid A compound obtained by addition to an epoxy group of a side chain. Examples of such an example include, for example, Japanese Patent Publication No. 2,763,075, Japanese Patent Application Laid-Open No. Hei No. Hei. No. Hei. <(B) Polymerizable compound> The above-mentioned polymerizable compound is not particularly limited, and may be appropriately selected according to the purpose, but it is preferred to have at least one polymerizable group in the molecule, and The compound having a boiling point of at most 100 ° C is, for example, at least one selected from the group having a (meth)acryl group. The aforementioned monomer having a (meth)acryl group is not particularly limited and may be appropriately selected according to the purpose of the object; for example, it may be polyethylene glycol mono(meth)acrylate or polypropylene glycol alone. Monofunctional acrylate or monofunctional methacrylate such as (meth) acrylate or phenoxyethyl (meth) acrylate; polyethylene glycol di(meth) acrylate, polypropylene glycol bis (A) Acrylate, trimethylolethane triacrylate, trimethylolpropane triacrylate, trihydrocarbyl propane diacrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tetra(methyl) Acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta (meth) acrylate, hexanediol di(meth) acrylate, trimethylolpropane Tris(propylene methoxypropyl)ether, tris(propylene decyloxyethyl)isocyanate, tris(propylene decyloxyethyl) cyanurate, tris(meth)acrylate Trimethylol Propylene, glycerin, bisphenol, etc., which are subjected to an addition reaction of an oxirane group or a propylene oxide on a polyfunctional alcohol, followed by a (meth) acrylate-ester-34-200809406; in Japanese Patent Publication No. 48-41708 No. pp. 50-6034, and JP-A-51-37193, etc., and the urethane acrylates described in each of the publications: JP-A-48-641 83, JP-A-49-431 91, and JP-A 52 A polyfunctional acrylate such as an epoxy acrylate described in each of the publications such as No. 30490; an epoxy acrylate such as an epoxy acrylate of a reaction product of an epoxy resin and (meth)acrylic acid, or a methacrylate. Among these, trimethylolpropane tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate is particularly preferred. In the solid content of the photosensitive composition described above, the solid content of the polymerizable compound is preferably from 5 to 50% by mass, more preferably from 10 to 40% by mass. When the content of the solid content is less than 5% by mass, problems such as deterioration in developability and deterioration in exposure sensitivity occur, and when it exceeds 50% by mass, adhesion of the photosensitive layer becomes excessively strong. . <(C) Photopolymerization initiator> The photopolymerization initiator is preferably a compound selected from the group consisting of a mercaptophosphine oxide compound and an anthracene derivative, and particularly preferably an anthracene derivative. Further, other photopolymerization initiators may be contained as occasion demands. An fluorenylphosphine oxide compound-'mercaptophosphine oxide compound, for example, may be a monodecylphosphine oxide, a bis-indenylphosphine oxide or a tridecylphosphine oxide compound. The above-mentioned fluorenylphosphine oxide compound is, for example, a compound represented by the following general formula (6) as suitable. 0 0 II II ... R11 — P — c — R13 — (6) R12 -35- 200809406 However, in the above general formula (6), R11 and R1 2 each independently represent a carbon number of 1 a phenyl group of -12, a sulfhydryl group, an amino atom, a halogen atom, a phenyl group substituted 1 to 4 times via an alkyl group having 1 to 8 carbon atoms, and an alkoxy group having 1 to 8 carbon atoms; Any of phenyl group, cyclohexyl group, and a group represented by COR13 in the following formula (i), and r11 may also represent an OR14 group and a group represented by the following formula (i) Either. R1 3 represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkylthio group having 1 to 8 carbon atoms, and 1 to 4 times by halogen atom substitution. Any one of a phenyl group and a group represented by the following formula (M); and R14 represents any one of an alkyl group having 1 to 8 carbon atoms, a phenyl group and a benzyl group. The γ-ray represents a phenyl group, an alkenyl group having 1 to 12 carbon atoms, and a cycloalkenyl group, and x represents an alkenyl group having 1 to 8 carbon atoms, and is represented by the following formula (hi) Any of the bases. 〇 0
II II 式(i ) X — P — c —R13 R11 〇 0 式(ii) II || Y — C — P —R11II II Formula (i) X — P — c — R13 R11 〇 0 Formula (ii) II || Y — C — P — R11
I R12 式(iii) 目U述之以一般式(6 )所代表的具體化合物,舉例來說, 例如’其可以是雙(2,6_二甲氧基苄醯基)苯基氧化膦、雙 (2,6-一甲氧基节酸基)(2,4,4_三甲基戊基)氧化膦、雙(2,6_ -36 - 200809406 二甲氧基苄醯基)-η -丁基氧化膦、雙(2,6 -二甲氧基苄醯基 )-(2 -甲基丙烷-1-基)氧化膦、雙(2,6 -二甲氧基苄醯基)-(1-甲基丙烷-1-基)氧化膦、雙(2,6·二甲氧基苄醯基)-t-丁基氧 化膦、雙(2,6-二甲氧基苄醯基)環己基氧化膦、雙(2,6-二甲 氧基苄醯基)辛基氧化膦、雙(2-二甲氧基苄醯基)(2-甲基丙 烷-1-基)氧化膦、雙(2-二甲氧基苄醯基)(1-甲基丙烷-1-基) 氧化膦、雙(2,6-二乙氧基苄醯基)(2-甲基丙烷-1-基)氧化膦 、雙(2,6-二乙氧基苄醯基)(1-甲基丙烷-1-基)氧化膦、雙 (2,6-二丁氧基苄醯基)(2-甲基丙烷-1-基)氧化膦、雙(2,4-二 甲氧基苄醯基)(2-甲基丙烷-1-基)氧化膦、雙(2,4,6-三甲基 苄醯基)(2,4-二戊氧基苯基)氧化膦、雙(2,6-二甲氧基苄醯基 )苄基氧化膦、雙(2,6-二甲氧基苄醯基)-2-苯基丙基氧化膦 、雙(2,6 _二甲氧基苄醯基)-2·苯基乙基氧化膦、雙(2,6-二甲 氧基苄醯基)苄基氧化膦、雙(2,6-二甲氧基苄醯基)-2-苯基 丙基氧化膦、雙(2,6-二甲氧基苄醯基)-2-苯基乙基氧化膦、 2,6-二甲氧基苄醯基氧苄基丁基氧化膦、2,6-二甲氧基苄醯 基辛基氧化膦、雙(2,4,6-三甲基苄醯基)-2,5-二異丙基苯基 氧化膦、雙(2,4,6-三甲基苄醯基)-2-甲基苯基氧化膦、雙 (2,4,6-三甲基苄醯基)-4 _甲基苯基氧化膦、雙(2,4,6-三甲基 苄醯基)-2,5-二乙基苯基氧化膦、雙(2,4,6-三甲基苄醯基 )-2,3,5,6-四甲基苯基氧化膦、雙(2,4,6-三甲基苄醯基)-2,4-二- η-丁氧基苯基氧化膦、2,4,6-三甲基苄醯基二苯基氧化膦 、雙(2,6 -二甲氧基苄醯基)-2,4,4 -三甲基戊基氧化膦、雙 (2,4,6 -三甲基苄醯基)異丁基苯基氧化膦、2,6 -二甲氧基苄 -37- 200809406 醯基-2,4,6-三甲基苄醯基-η· 丁基氧化膦、雙(2,4,6·三甲基 苄醯基)苯基氧化膦、雙(2,4,6 -三甲基苄醯基)-2,4 -二丁氧基 苯基氧化膦、1,10-雙〔雙(2,4,6-三甲基苄醯基)氧化膦〕癸 垸、三(2-甲基节醯基)氧化膦等。此等之中,較宜是雙(2,4,6-三甲基节醯基)苯基氧化膦、雙(2,4,6-三甲基苄醯基)-2,4-二-n-丁氧基苯基氧化膦、2,4,6-三甲基苄醯基二苯基氧化膦 、雙(2,6-二甲氧基苄醯基卜2,4,4_三甲基戊基氧化膦。 一肟衍生物一 前述之肟衍生物並沒有特別地限定,可以視目的需要而 適當地選擇,較宜是至少具有芳香族基之化合物,更宜是具 有以下述之一般式(3)及下述之一般式(4)中之任一者所代表 的部分構造之化合物。前述之肟衍生物,也可以倂用2種以 上。I R12 Formula (iii) is a specific compound represented by the general formula (6), for example, 'which may be bis(2,6-dimethoxybenzyl) phenylphosphine oxide, Bis(2,6-monomethoxyloxy)(2,4,4-trimethylpentyl)phosphine oxide, bis(2,6_-36 - 200809406 dimethoxybenzylidene)-η - Butyl phosphine oxide, bis(2,6-dimethoxybenzyl)-(2-methylpropan-1-yl)phosphine oxide, bis(2,6-dimethoxybenzyl)-( 1-methylpropan-1-yl)phosphine oxide, bis(2,6-dimethoxybenzyl)-t-butylphosphine oxide, bis(2,6-dimethoxybenzyl) ring Hexyl phosphine oxide, bis(2,6-dimethoxybenzyl) octyl phosphine oxide, bis(2-dimethoxybenzyl) (2-methylpropan-1-yl) phosphine oxide, double (2-dimethoxybenzyl) (1-methylpropan-1-yl)phosphine oxide, bis(2,6-diethoxybenzyl)-(2-methylpropan-1-yl) Phosphine oxide, bis(2,6-diethoxybenzyl) (1-methylpropan-1-yl)phosphine oxide, bis(2,6-dibutoxybenzyl) (2-methyl) Propane-1-yl)phosphine oxide, bis(2,4-dimethoxy (benzylidene)(2-methylpropan-1-yl)phosphine oxide, bis(2,4,6-trimethylbenzylidene)(2,4-dipentyloxyphenyl)phosphine oxide, double 2,6-dimethoxybenzylidene)benzylphosphine oxide, bis(2,6-dimethoxybenzyl)-2-phenylpropylphosphine oxide, bis(2,6-dimethoxy Benzylidene-2-(phenylethylphosphine oxide), bis(2,6-dimethoxybenzylidene)benzylphosphine oxide, bis(2,6-dimethoxybenzylidene)-2 -Phenylpropylphosphine oxide, bis(2,6-dimethoxybenzyl)-2-phenylethylphosphine oxide, 2,6-dimethoxybenzyloxybenzylphosphonium butylphosphine oxide , 2,6-dimethoxybenzylphosphonylphosphine oxide, bis(2,4,6-trimethylbenzylidene)-2,5-diisopropylphenylphosphine oxide, double (2, 4,6-trimethylbenzylidene)-2-methylphenylphosphine oxide, bis(2,4,6-trimethylbenzylidene)-4-methylphenylphosphine oxide, double (2, 4,6-trimethylbenzylidene)-2,5-diethylphenylphosphine oxide, bis(2,4,6-trimethylbenzylidene)-2,3,5,6-tetramethyl Phenyl phenylphosphine oxide, bis(2,4,6-trimethylbenzylindenyl)-2,4-di-n-butoxyphenylphosphine oxide, 2,4,6-trimethylbenzylidene two Phosphine oxide, bis(2,6-dimethoxybenzylidene)-2,4,4-trimethylpentylphosphine oxide, bis(2,4,6-trimethylbenzylidene)isobutyl Phenyl phenylphosphine oxide, 2,6-dimethoxybenzyl-37- 200809406 fluorenyl-2,4,6-trimethylbenzylidene-η·butylphosphine oxide, bis(2,4,6· Trimethyl benzhydryl)phenylphosphine oxide, bis(2,4,6-trimethylbenzylidene)-2,4-dibutoxyphenylphosphine oxide, 1,10-bis[double (2 , 4,6-trimethylbenzylidene)phosphine oxide ruthenium, tris(2-methylthionyl)phosphine oxide, and the like. Among these, bis(2,4,6-trimethylsulfonyl)phenylphosphine oxide, bis(2,4,6-trimethylbenzylidene)-2,4-di- is preferred. N-butoxyphenylphosphine oxide, 2,4,6-trimethylbenzylphosphonium diphenylphosphine oxide, bis(2,6-dimethoxybenzylidene 2,4,4_trimethyl A fluorenylphosphine oxide. The monoterpene derivative is not particularly limited, and may be appropriately selected depending on the purpose, and is preferably a compound having at least an aromatic group, and more preferably has the following general A compound having a partial structure represented by any one of the formula (3) and the following general formula (4). The above-mentioned anthracene derivative may be used in combination of two or more kinds.
Ar~(c(Y1)= Ν-〇-Y2)m —般式(3) Ar-(c〇-C(Y1)=N~〇-Y2) 一般式(4) \ / m 但,在前述之一般式(3)及(4)中,Ar係代表芳香族基及 雜環基中之任一種;Y 1係代表氫原子及一價的取代基中之任 一種;Y2係代表脂肪族基、芳香族基、雜環基、COY3、C02Y3 及CONY4Y5中之任一種;Y3、Y4及丫5係代表脂肪族基、芳 香族基及雜環基中之任一種;m係代表1以上之整數。 前述之Y1較宜是氫原子、脂肪族基及芳香族基中之任 一者。 -38- 200809406 前述之Y2,較宜是脂肪族基、COY6、C02Y6中之任一 者。Y6係代表脂肪族基、芳香族基、以及雜環基中之任一者 〇 Y3及Y4較宜是脂肪族基及芳香族基中之任一者。 做爲前述之肟衍生物的以前述一般式(3)及以前述一般 式(4)所代表的構造,也可以是透過連結基所複數鍵結而成 的化合物。 另外,在前述一般式(3)及前述一般式(4)中,前述之脂 肪族基係代表可以具有個別的取代基之烷基、烯基、炔基, 前述之芳香族係代表可以具有個別的取代基之芳基、雜環 (hetro環)基,前述之1價的取代基係代表鹵素原子、可以 具有取代基的胺基、烷氧基羰基、羥基、醚基、硫醇基、硫 醚基、矽烷基、硝基、氰基、可以具有個別的取代基之烷基 、烯基、炔基、芳基、雜環基。 前述之芳香族基,舉例來說,例如,其可以是1至3個 苯環形成縮環之物、苯環和5員不飽和環形成縮環之物等; 具體例子,舉例來說,例如其可以是苯基、萘基、蒽基、菲 基、茚基、二氫苊基、莽基等;此等之中,較宜是具有苯基 及萘基中之任一者的基,更宜是具有萘基的基。 又,此等之芳香族基也可以具有取代基’像這樣的取代 基,舉例來說,例如其可以是由氫原子以外的一價非金屬原 子團所構成的基。舉例來說,例如,可以是後述所示之烷基 、取代烷基、或做爲取代烷基中的取代基之物等。 又,前述之(hetro環)基,吡咯環基、呋喃環基、噻吩 -39 - 200809406 環基、苯并吡咯環基、苯并呋喃環基、苯并噻吩環基、吡唑 環基、異噚唑環基、異噻唑環基、吲唑環基、苯并異曙唑環 基、苯并異噻唑環基、咪唑環基、噚唑環基、噻唑環基、苯 并咪唑環基、苯并噚唑環基、苯并噻唑環基、吡啶環基、喹 啉環基、異喹啉環基、嗒畊環基、嘧啶環基、吡阱環基、吠 哄環基、喹唑啉環基、喹喔啉環基、氧氮雜環丙烷環基、菲 啶環基、咔唑環基、卟啉環基、哌喃環基、哌啶環基、哌阱 環基、嗎福啉環基、吲哚環基、吲哄環基、色烯環基、啐啉 環基、吖啶環基、啡噻畊環基、四唑環基、三阱環基等;此 等之中,特佳爲呋喃環基、噻吩環基、咪唑環基、噻唑環基 、苯并噻唑環基、吡啶環基、吲哚環基、吖啶環基。 又,此等之雜環基也可以具有取代基,像這樣的取代基 ,舉例來說,例如其可以是由氫原子以外的一價非金屬原子 團所構成的基。舉例來說,例如,可以是後述所示之烷基、 取代烷基、或做爲取代烷基中的取代基之物等。 前述之1價的取代基,較宜是鹵素原子、可以具有取代 基的胺基、烷氧基羰基、羥基、醚基、硫醇基、硫醚基、矽 烷基、硝基、氰基、可以具有個別的取代基之烷基、烯基、 炔基、芳基、雜環基。 又,前述之由非金屬原子團構成的1價之取代基,較宜 是可以具有個別的取代基之烷基、烯基、炔基、芳基、雜環 基。 前述之可以具有取代基的烷基,舉例來說,例如其可以 是碳原子數爲1至20之直鏈狀、分枝狀及環狀之烷基。其 -40 - 200809406 具體例子,舉例來說,例如,可以是甲基、乙基、丙基、丁 基、戊基、己基、庚基、辛基、壬基、癸基、十一^基、十二 基、十三基、十六基、十八基、二十基、異丙基、異丁基、 s-丁基、t-丁基、異戊基、新戊基、1_甲基丁基、異己基、 2-乙基己基、2-甲基己基、環己基、環戊基、2-壬基羰基。 此等之中,更宜是碳原子數爲1至12之直鏈狀、碳原子數 爲3至12之分枝狀、及碳原子數爲5至10之環狀的烷基。 前述之可以具有取代基的烷基之取代基,舉例來說,例 如其可以是由氫原子以外的一價非金屬原子團構成的取代 基;較佳的例子,舉例來說,例如其可以是鹵素原子(一 F、 一 Br、一 CI、一 I)、經基、院氧基、芳氧基、氣硫基、院硫 基、芳硫基、烷基二硫基、芳基二硫基、胺基、N-烷胺基、 N,N-二烷胺基、N-芳胺基、Ν,Ν·二芳胺基、N-烷基-N-芳胺 基、醯氧基、胺甲醯氧基、Ν-烷基胺甲醯氧基、Ν-芳基胺甲 醯氧基、Ν,Ν-二烷基胺甲醯氧基、Ν,Ν-二芳基胺甲醯氧基、 Ν-烷基-Ν-芳基胺甲醯氧基、烷基磺醯氧基、芳基磺醯氧基 、醯基硫基、醯基胺基、Ν-烷基醯基硫基、Ν-芳基醯基胺基 、脲基、Ν’-脲基、Ν’,Ν’-二烷基脲基、Ν’-芳基脲基、Ν’,Ν’-二芳基脲基、Ν’-烷基- Ν’-芳基脲基、Ν-烷基脲基、Ν-芳基脲 基、Ν’-烷基-Ν-烷基脲基、Ν’-烷基-Ν-芳基脲基、Ν’,Ν’-二烷 基_卜烷基脲基、1^’,问’-二烷基-卜烷基脲基、^,『-二烷基-卜 芳基脲基、Ν’-芳基-Ν-烷基脲基、Ν’-烷基-Ν-芳基脲基、N’,N’-二芳基-N-烷基脲基、N’,N’-二芳基-N-芳基脲基、N’-烷基-N’-芳基-N-烷基脲基等、N’-烷基·N’-芳基-N-芳基脲基、烷氧 -41 - 200809406 基、羰胺基、芳氧基基羰胺基、N-烷基-N-烷氧基羰胺基、 N-烷基-N-芳氧基基羰胺基、N-芳基-N-烷氧基羰胺基、N-芳 基-N-芳氧基基羰胺基、甲醯基、醯基、羧基、烷氧基羰基 、芳氧基羰基、胺甲醯基、N-烷基胺甲醯基、N,N-二烷基胺 甲醯基、N-芳基胺甲醯基、Ν,Ν-二芳基胺甲醯基、N-烷基- N-芳基胺甲醯基、烷基亞磺醯基、芳基亞磺醯基、烷基磺醯基 、芳基磺醯基、磺酸基(-S03H)及其共軛鹼基(稱爲磺酸根 基)、烷氧基磺醯基、胺亞磺醯基、N -烷基胺亞磺醯基、N,N-二烷基胺亞磺醯基、N-芳基胺亞磺醯基、N,N-二芳基胺亞磺 醯基、N-烷基-N-芳基胺亞磺醯基、胺磺醯基、N-烷基胺磺 醯基、Ν,Ν-二烷基胺磺醯基、N-芳基胺磺醯基、N,N-二芳基 胺磺醯基、N-烷基-N-芳基胺磺醯基、膦酸基(―P〇3H2)及其 共軛鹼基(稱爲膦酸根基)、二烷基膦酸基(一 P03(alkyl)2)「 alkyl =院基,以下同」、二芳基膦酸基(一 P03(aryl)2)「aryl = 芳基,以下同」、烷基芳基膦酸基(一 P03(alkyl)(aryl))、單 烷基膦酸基(一 P〇3(alkyl))及其共軛鹼基(稱爲烷基膦酸根 基)、單芳基膦酸基(―P03H(aryl))及其共軛鹼基(稱爲芳基 膦酸根基)、膦酸氧基(一 〇ρ〇3η2)及其共軛鹼基(稱爲膦酸根 氧基)、二烷基膦酸氧基(―0P03H(alkyl)2)、二芳基膦酸氧 基(一 OP03(aryl)2)、烷基芳基膦酸氧基(一 OP〇3(a|ky|)(aryl) )、單烷基膦酸氧基(—0卩0川(3丨1<71))及其共軛鹼基(稱爲烷 基膦酸根氧基)、單芳基膦酸基(―0P03H(aryl))及其共軛鹼 基(稱爲芳基膦酸根氧基)、氰基、硝基、芳基、烯基、炔基 、雜環基、矽烷基等。 -42- 200809406 此等之取代基中的烷基之具體例子,舉例來說,例如, 其可以是前述之烷基。前述之取代基中的芳基之具體例子, 舉例來說,例如其可以是苯基、聯苯基、萘基、甲苯基、二 甲苯基、三甲苯基、異丙苯基、氯苯基、溴苯基、氯甲基苯 基、羥基苯基、甲氧基苯基、乙氧基苯基、苯氧基苯基、乙 醯氧基苯基、苯甲醯氧基苯基、甲基硫苯基、苯基硫苯基、 甲胺基苯基、二甲胺基苯基、乙醯基胺基苯基、羧基苯基、 甲氧基羰基苯基、乙氧基羰基苯基、苯氧基羰基苯基、N-苯基胺甲醯基苯基、氰基苯基、磺酸基苯基、磺酸根基苯基 、膦酸基苯基、膦酸根基苯基等。 又,前述之取代基中的烯基之具體例子,舉例來說,例 如其可以是乙烯基、1-丙烯基、1-丁醯基、桂皮基、2-氯-1-醚基等;而前述之取代基中的炔基之具體例子,舉例來說, 例如其可以是乙炔基、1 -丙炔基、1 -丁炔基、三甲基矽烷基 乙炔基等。 前述之取代基中的雜環基,舉例來說,例如其可以是吡 啶基、哌啶基等。 前述之取代基中的矽烷基,舉例來說,例如其可以是三 甲基矽烷基等。 在前述之取代基中,係可以含有醯基(RQ1CO -);該醯 基’舉例來說’例如其可以是爲如氫原子、前述之院基 、芳基等。 醯基(RQ1CO—)之RQ1,舉例來說,例如其可以是氫原 子、以及前述之烷基、芳基等。在此等之取代基之中,更理 -43 - 200809406 想之物係齒素原子(—F、— B「、— C丨、—丨)、院氧基、芳氧 基、烷硫基、芳硫基、N_烷胺基、Ν,Ν-二烷胺基、醯氧基、 Ν-烷基胺甲醯氧基、Ν-芳基胺甲醯氧基、醯基胺基、甲醯基 、醯基、羧基、烷氧基羰基、芳氧基羰基、胺甲醯基、Ν-烷基胺甲醯基、Ν,Ν-二烷基胺甲醯基、Ν-芳基胺甲醯基、Ν-烷基-Ν-芳基胺甲醯基、磺酸基、磺酸根基、胺磺醯基、Ν-烷基胺磺醯基、Ν,Ν-二烷基胺磺醯基、Ν-芳基胺磺醯基、Ν,Ν-二芳基胺磺醯基、膦酸基、膦酸根基、二烷基膦酸基、二芳 基膦酸基、單烷基膦酸基、烷基膦酸根基、單芳基膦酸基、 芳基膦酸根基、膦酸氧基、膦酸根氧基、芳基、烯基等。 另一方面,前述之取代烷基中的伸烷基,舉例來說,例 如其可以是除去前述碳數爲1到20之烷基上的任何1個氫 原子之2價有機殘基;例如,較宜是碳原子數爲1到1 2之 直鏈狀伸烷基、碳原子數爲3到1 2之分枝狀伸烷基、碳原 子數爲5到1 0之環狀伸烷基。像這樣的由取代基與伸烷基 組合而得到的取代烷基之較佳的具體例子,舉例來說,例如 其可以是氯甲基、溴甲基、2-氯乙基、三氟甲基、甲氧基甲 基、異丙氧基甲基、丁氧基甲基、s-丁氧基丁基、甲氧基乙 氧基乙基、烯丙氧基甲基、苯氧基甲基、甲基硫甲基、甲苯 基硫甲基、吡啶基甲基、四甲基哌啶基甲基、Ν-乙醯基四甲 基哌啶基甲基、三甲基矽烷基甲基、甲氧基乙基、乙胺基乙 基、二乙胺基丙基、嗎福啉基丙基、乙醯氧基甲基、苯甲醯 氧基甲基、Ν-環己基胺甲醯氧基乙基、Ν-苯基胺甲醯氧基乙 基、乙醯基胺基乙基、Ν-甲基苯甲醯基胺基丙基、2-側氧乙 -44 - 200809406 基、2-側氧丙基、竣基丙基、甲氧鑛基乙基、嫌丙氧基幾基 丁基、氯苯氧基羰基甲基、胺甲醯基甲基、N -甲基胺甲醯基 乙基、N,N-二丙基胺甲醯基甲基、N-(甲氧苯基)胺甲醯基乙 基、N-甲基-N-(膦酸基苯基)胺甲醯基甲基、磺酸基丁基、磺 酸根基丁基、胺磺醯基丁基、N -乙基胺磺醯基甲基、Ν,Ν-二丙基胺磺醯基、Ν-苯胺基胺磺醯基丙基、Ν-甲基-Ν-(膦酸 基苯基)胺磺醯基辛基、膦酸基丁基、膦酸根基己基、二乙 基膦酸基丁基、二苯基膦酸基丙基、甲基膦酸基丁基、甲基 膦酸根基丁基、甲苯基膦酸基己基、曱苯基膦酸根基己基、 膦酸氧基丙基、膦酸根氧基丙基、苄基、苯乙基、α -甲基 苄基、1-甲基-1-苯基乙基、ρ-甲基苄基、桂皮基、烯丙基、 1-丙烯基甲基、2-丁烯基、2-甲基烯丙基、2-甲基丙烯基甲 基、2-丙炔基、2-丁炔基、3-丁炔基等。 前述之芳基,舉例來說,例如其可以是由1個到3個苯 環形成縮環之物、由苯環和5員不飽和環形成縮環之物;具 體例子,舉例來說,例如其可以是苯基、萘基、蔥基、菲基 、茚基、二氫苊基、蕗基等。在此等之中,更理想是苯基、 萘基。 前述之取代芳基係可以使用在前述之芳基的環形成碳 原子上具有做爲取代基的由氫原子以外之一價非金屬原子 團所構成之基。較佳的取代基的例子,舉例來說,例如其可 以是前述之烷基、取代烷基、以及例示來做爲前述取代烷基 中的取代基之物。 前述取代芳基之較佳的具體例子,舉例來說,例如其可 -45- 200809406 以是聯苯基、甲苯基、二甲苯基、三甲苯基、異丙苯基、氯 苯基、溴苯基、氟苯基、氯甲基苯基、三氟甲基苯基、羥基 苯基、甲氧基苯基、甲氧基乙氧基苯基、烯丙氧基苯基、苯 氧基苯基、甲基硫苯基、甲苯基硫苯基、乙胺基苯基、二乙 胺基苯基、嗎福啉基苯基、乙醯氧基苯基、苯甲醯氧基苯基 、N-環己基胺甲醯氧基苯基、N-苯基胺甲醯氧基苯基、乙醯 基胺基苯基、N -甲基苯甲醯基胺基苯基、羧基苯基、甲氧基 羰基苯基、烯丙氧基羰基苯基、氯苯氧基羰基苯基、胺甲醯 氧基苯基、N-甲基胺甲醯氧基苯基、N,N-二丙基胺甲醯氧基 苯基、N-(甲氧基苯基)胺甲醯氧基苯基、N-甲基- N-(磺酸基 苯基)胺甲醯氧基苯基、磺酸基苯基、磺酸根基苯基、胺磺 醯基苯基、N-乙基胺磺醯基苯基、Ν,Ν-二丙基胺磺醯基苯基 、Ν-甲苯基胺磺醯基苯基、Ν-甲基-Ν-(磺酸基苯基)胺磺醯 基苯基、膦酸基苯基、膦酸根基苯基、二乙基膦酸基苯基、 二苯基膦酸根基苯基、甲基膦酸基苯基、甲基膦酸根基苯基 、甲苯基膦酸基苯基、甲苯基膦酸根基苯基、烯丙基苯基、 1-丙烯基甲基苯基、2-丁烯基苯基、2-甲基烯丙基苯基、2-甲基丙烯基苯基、2-丙炔基苯基、2-丁炔基苯基、3-丁炔基 苯基等。 前述之烯基、前述之取代烯基、前述之炔基及前述之取 代炔基(一 C(R02) = C(R03)(R〇4、 〇,n05、、 )及一Ce C(R05)),舉例來說 ,例如其可以是RQ2、RQ3、R〇4 及R 5爲由一價的非金屬原 子團所構成的基之物。 前述之 RQ2、RQ3、R。4 及 r〇5 ,舉例來說,例如其可以 200809406 是氫原子、鹵素原子、烷基、取代烷基、芳基、取代 。此等之具體例子,舉例來說’例如其可以是例示來 述的例子者。此等之中,較宜是氫原子、鹵素原子、 數爲1到1 0之直鏈狀烷基、分枝狀烷基、環狀烷基 具體的例子,舉例來說,例如其可以是乙烯基、 基、1-丁烯基、1-戊烯基、1·己烯基、1-辛烯基、1-E 丙烯基、2-甲基-1-丙烯基、2-甲基-1-丁烯基、2-苯3 烯基、2-氯-1-乙烯基、乙炔基、1-丙炔基、1-丁炔基 乙炔基等。 雜環基,舉例來說,例如其可以是例示來做爲取 之取代基的吡啶基等。 前述之氧基(R^O—),舉例來說,例如其可以是 由除了氫原子以外的一價非金屬原子團所構成的基之 理想的取代氧基,舉例來說,例如其可以是烷氧基、 、醯氧基、胺甲醯基氧基、N-烷基胺甲醯基氧基、N-甲醯基氧基、N,N-二院基胺甲醯基氧基、ν,Ν -二芳基 基氧基、Ν -烷基-Ν-芳基胺甲醯基氧基、烷基磺酸基 芳基磺酸基氧基、膦酸基氧基、膦酸根基氧基等。此 的烷基及芳基,舉例來說,例如其可以是例示來做爲 烷基、取代烷基、以及芳基和取代芳基之物。又,前 氧基中之醯基(RQ7CO—),舉例來說,例如,r〇7可以 來做爲先前的例子之烷基、取代烷基、以及芳基和取 之物。在此等之取代基之中,較宜是烷氧基、芳氧基 基、芳基磺酸氧基。較佳的取代氧基之具體例子,甲 芳基等 做爲前 碳原子 〇 1-丙烯 P 基-1-S -1-乙 、苯基 代烷基 R06爲 物。較 芳氧基 芳基胺 胺甲醯 氧基、 等之中 前述之 述之醯 是列舉 代芳基 、醯氧 氧基、 -47- 200809406 乙氧基、丙氧基、異丙氧基、丁氧基、戊氧基、己氧基、十 二烷基氧基、苄氧基、烯丙基氧基、苯乙基氧基、羧乙基氧 基、甲氧羰基氧基、乙氧羰基乙氧基、甲氧基乙氧基、甲氧 基乙氧基乙氧基、乙氧基乙氧基乙氧基、嗎福啉基乙氧基、 嗎福啉基丙氧基、烯丙氧基乙氧基乙氧基、苯氧基、甲苯基 氧基、二甲苯基氧基、三甲苯基氧基、三甲苯基氧基、異丙 基氧基、甲氧基苯基氧基、乙氧基苯基氧基、氯苯基氧基、 溴苯基氧基、乙醯基氧基、苯甲醯基氧基、萘基氧基、苯基 磺酸基氧基、苯基磺酸根基苯基、膦酸基氧基、膦酸根基氧 基等。 也含醯基之取代胺基(RG8NH-、(R^MR^^N —),舉例 來說,例如,可以使用F^8、F^9及爲由除了氫原子以 外之一價的非金屬原子團所構成的基之物。另外,F^9和R151 也可以鏈結而形成環。取代胺基之較理想的例子,舉例來說 ,例如其可以是N-烷基胺基、N,N-二烷基胺基、N-芳基胺 基、N,N-二芳基胺基、N-烷基-N-芳基胺基、醯基胺基、N-烷基醯基胺基、N-芳基醯基胺基、脲基、Ν’-烷基脲基、Ν’,Ν’-二烷基脲基、Ν’-芳基脲基、Ν’,Ν’-二芳基脲基、Ν’-烷基- Ν’-芳基脲基、Ν-烷基脲基、Ν-芳基脲基、Ν’-烷基-Ν-烷基脲基 、Ν’-烷基-Ν-芳基脲基、Ν’,Ν’-二烷基-Ν-烷基脲基、Ν’-烷基 -1^-芳基脲基、1^,1^’-二烷基-卜烷基脲基、1^’,问’-二烷基-^-芳基脲基、Ν’-芳基-Ν-烷基脲基、Ν’-芳基-Ν-芳基脲基、Ν’,Ν’-二芳基-Ν-烷基脲基、Ν’,Ν’-二芳基-Ν-芳基脲基、Ν’-烷基- Ν’-芳基-Ν-烷基脲基、Ν’-烷基- Ν’-芳基-Ν-芳基脲基、烷氧羰基 -48- 200809406 胺基、芳氧羰基胺、N-烷基-Ν·烷氧羰基胺基、N-烷基-N-芳 氧羰基胺基、N-芳基-N-烷氧羰基胺基、N-芳基-N-芳氧幾基 胺基等。此等之中的烷基及芳基,舉例來說,例如其可以是 例示來做爲前述之烷基、取代烷基、以及芳基及取代芳基之 物;醯基胺基、N-烷基醯基胺基、N-芳基醯基胺基中的醯基 (R07CO—)之R07係如前述。在此等之中,更理想的例子, 舉例來說,例如N-烷基胺基、N,N-二烷基胺基、N-芳基胺 基、醯基胺基。較佳的取代胺基之具體例子,舉例來說,例 如’甲基胺基、乙基胺基、二乙基胺基、嗎福啉根基、哌錠 基、吡錠基、苯基胺基、苯甲醯基胺基、乙醯基胺基等。 取代磺醯基(RQ11 — S02 —),舉例來說,例如,可以使 用RG11爲由一價的非金屬原子團所構成的基之物。更理想 的例子,舉例來說,例如其可以是烷基磺醯基、芳基磺醯基 。此等之中的烷基及芳基,舉例來說,例如其可以是例示來 做爲前述之烷基、取代烷基、以及芳基及取代芳基之物。像 這樣的取代磺醯基之具體例子,舉例來說,例如其可以是丁 基磺醯基、苯基磺醯基、氯苯基磺醯基等。 磺酸根基(一so3-),如前述,係意味著磺酸基(一 S03H) 之共軛鹼陰離子的意思,通常較宜是與對陽離子一同使用。 像這樣的對陽離子係可以適宜地選擇一般所知之物來使用 ’舉例來說,例如其可以是鑰類(例如,銨類、硫鑰類、鱗 類、鎭類、吖啶鑰等)、金屬離子類(例如,Na+、K+、Ca2 + 、Zn2 +等)。 取代羰基(RQ13 — CO—),舉例來說,例如,可以使用 -49 - 200809406 rQ13爲由一價的非金屬原子團所構成的基之物。取代羰基之 較理想的例子,舉例來說,例如其可以是甲醯基、醯基、羧 基、烷氧羰基、芳氧鑛基、胺甲醯基、N -垸基胺甲醯基、N,N-二院基胺甲醯基、N -芳基胺甲酿基、Ν,Ν -二芳基胺甲醯基、 Ν-烷基- Ν’-芳基胺甲醯基等。此等之中的烷基及芳基,舉例 來說’例如其可以是例示來做爲前述之烷基、取代烷基、芳 基及取代芳基之物。此等之中,較理想的取代羰基,舉例來 說,例如,甲醯基、醯基、羧基、烷氧羰基、芳氧羰基、胺 甲醯基、Ν-烷基胺甲醯基、Ν,Ν-二烷基胺甲醯基、Ν-芳基胺 甲醯基;更理想的例子,舉例來說,例如其可以是甲醯基、 醯基、烷氧羰基等,以及芳氧基羰基。較理想的取代羰基之 具體例子,舉例來說,例如其可以是甲醯基、乙醯基、苯甲 醯基、羧基、甲氧羰基、乙氧羰基、烯丙氧羰基、二甲基胺 基苯基醚羰基、甲氧羰基甲氧羰基、Ν-甲基胺甲醯基、Ν-苯基胺甲醯基、Ν,Ν-二乙基胺甲醯基、嗎福啉基羰基等。 取代亞磺醯基(RQ14— SO—),舉例來說,例如,可以 使用RQ14爲由一價的非金屬原子團所構成的基之物。較理 想的例子,舉例來說,例如其可以是烷基亞磺醯基、芳基亞 磺醯基、胺亞磺醯基、N-烷基胺亞磺醯基、N,N-二烷基胺亞 擴醯基、N-芳基胺亞磺醯基、Ν,Ν-二芳基胺亞磺醯基、N-院基-Ν-芳基胺亞磺醯基等。此等之中的烷基及芳基,舉例 來說’例如其可以是例示來做爲前述之烷基、取代烷基、芳 基及取代芳基之物。在此等之中,更理想的例子係烷基亞磺 醯基、芳基亞磺醯基。像這樣的取代亞磺醯基之具體例子, -50- 200809406 舉例來說,例如,合適者有己基亞磺醯基、苄基亞磺醯基、 甲苯基亞磺醯基等。 所謂之取代膦酸基,係指在膦酸基上的一到二個之羥基 爲其他的有機側氧基所取代之物的意思;較理想的例子,舉 例來說,例如其可以是前述之二烷基膦酸基、二芳基膦酸基 、烷基芳基膦酸基、單烷基膦酸基、單芳基膦酸基等。此等 之中,更宜是二烷基膦酸基、二芳基膦酸基。像這樣的具體 例子,舉例來說,例如其可以是二乙基膦酸基、二丁基膦酸 基、二苯基膦酸基等。 所謂之膦酸根基(一P〇3H2-、一 po3h —),如以上所述, 係指由膦酸基(一 P03H2)之酸第一解離或酸第二解離而來之 共軛鹼基陰離子的意思。通常,較宜是與對陽離子一同使用 。像這樣的對陽離子係可以適宜地選擇一般所知之物來使用 ’舉例來說,例如其可以是鐡類(例如,銨類、硫鑰類、鱗 類、鎭類、吖啶鑰等)、金屬離子類(例如,Na+、K+、Ca2 + 、Zn2 +等)。 所謂之取代膦酸根基,可以是在膦酸基之內的羥基經取 代成一個有機側氧基之物的共軛鹼陰離子基;具體例子,舉 例來說’例如其可以是前述之單烷基膦酸基(一 P〇3H (alkyl)) 、單芳基膦酸基(一 P〇3H(aryl))。 前述肟衍生物之其他的具體例子,舉例來說,例如其可 以是在特開2001 — 233842號、特表2004 — 534797號公報 、及特表2002 — 51 9732號公報等所揭示之化合物、以及以 下述之構造式所代表的化合物等。 3200809406Ar~(c(Y1)= Ν-〇-Y2)m General (3) Ar-(c〇-C(Y1)=N~〇-Y2) General formula (4) \ / m However, in the foregoing In the general formulae (3) and (4), the Ar system represents any one of an aromatic group and a heterocyclic group; Y 1 represents a hydrogen atom and a monovalent substituent; and the Y 2 represents an aliphatic group. Any one of an aromatic group, a heterocyclic group, COY3, C02Y3 and CONY4Y5; Y3, Y4 and 丫5 represent any of an aliphatic group, an aromatic group and a heterocyclic group; m represents an integer of 1 or more . The above Y1 is preferably any one of a hydrogen atom, an aliphatic group and an aromatic group. -38- 200809406 The aforementioned Y2 is preferably any of an aliphatic group, COY6, and C02Y6. Y6 represents any of an aliphatic group, an aromatic group, and a heterocyclic group. 〇 Y3 and Y4 are preferably any of an aliphatic group and an aromatic group. The above-mentioned general formula (3) and the structure represented by the above general formula (4), which are the above-mentioned anthracene derivatives, may be a compound which is bonded by a plurality of linking groups. Further, in the above general formula (3) and the above general formula (4), the above aliphatic group represents an alkyl group, an alkenyl group or an alkynyl group which may have an individual substituent, and the above aromatic group may have individual The substituent aryl group, heterocyclic ring group, the above monovalent substituent represents a halogen atom, an amine group which may have a substituent, an alkoxycarbonyl group, a hydroxyl group, an ether group, a thiol group, a sulfur An ether group, a decyl group, a nitro group, a cyano group, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group which may have an individual substituent. The above aromatic group may be, for example, one to three benzene rings to form a condensed ring, a benzene ring, and a 5-membered unsaturated ring to form a condensed ring; and the like; for example, for example, for example It may be a phenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, an anthracenyl group, a dihydroindenyl group, a fluorenyl group or the like; among these, it is preferably a group having a phenyl group and a naphthyl group, and more preferably It is preferably a group having a naphthyl group. Further, these aromatic groups may have a substituent such as a substituent. For example, it may be a group composed of a monovalent non-metal atom group other than a hydrogen atom. For example, it may be an alkyl group, a substituted alkyl group, or a substituent as a substituent in the substituted alkyl group, which will be described later. Further, the above (hetro ring) group, pyrrole ring group, furan ring group, thiophene-39 - 200809406 ring group, benzopyrrole group, benzofuran ring group, benzothiophene ring group, pyrazole ring group, different Oxazole ring group, isothiazole ring group, carbazole ring group, benzoisoxazole ring group, benzisothiazole ring group, imidazole ring group, indazole ring group, thiazole ring group, benzimidazole ring group, benzene And oxazolyl ring group, benzothiazole ring group, pyridine ring group, quinoline ring group, isoquinoline ring group, hydrazine ring group, pyrimidine ring group, pyr trap ring group, anthracene ring group, quinazoline ring , quinoxaline ring group, oxaziridine ring group, phenanthridine ring group, carbazole ring group, porphyrin ring group, piper ring group, piperidine ring group, piperazine ring group, morpholin ring a group, an anthracene ring group, an anthracene ring group, a chromene ring group, a porphyrin ring group, an acridine ring group, a morpholidine group, a tetrazole ring group, a triple well ring group, etc.; Preferably, it is a furanyl group, a thiophene ring group, an imidazole ring group, a thiazole ring group, a benzothiazole ring group, a pyridine ring group, an anthracene ring group, an acridine ring group. Further, the heterocyclic group may have a substituent. Such a substituent may be, for example, a group composed of a monovalent non-metal atom other than a hydrogen atom. For example, it may be an alkyl group, a substituted alkyl group, or a substituent as a substituent in the substituted alkyl group, which will be described later. The above monovalent substituent is preferably a halogen atom, an amine group which may have a substituent, an alkoxycarbonyl group, a hydroxyl group, an ether group, a thiol group, a thioether group, a decyl group, a nitro group, a cyano group, or the like. An alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group having an individual substituent. Further, the above-mentioned monovalent substituent composed of a non-metal atomic group is preferably an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group which may have an individual substituent. The above-mentioned alkyl group which may have a substituent, for example, may be a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. Its -40 - 200809406 specific examples, for example, may be methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, decyl, decyl, eleven Twelve, thirteen, hexadecyl, octadecyl, icosyl, isopropyl, isobutyl, s-butyl, t-butyl, isopentyl, neopentyl, 1-methyl Butyl, isohexyl, 2-ethylhexyl, 2-methylhexyl, cyclohexyl, cyclopentyl, 2-mercaptocarbonyl. Among these, an alkyl group having a linear chain of 1 to 12 carbon atoms, a branched form having 3 to 12 carbon atoms, and a cyclic alkyl group having 5 to 10 carbon atoms is more preferable. The substituent of the above-mentioned alkyl group which may have a substituent, for example, it may be a substituent composed of a monovalent non-metal atom group other than a hydrogen atom; preferably, for example, it may be a halogen Atom (a F, a Br, a CI, an I), a thiol, an alkoxy group, an aryloxy group, a thiol group, a thiol group, an arylthio group, an alkyldithio group, an aryldithio group, Amino, N-alkylamino, N,N-dialkylamino, N-arylamino, hydrazine, hydrazine, diarylamino, N-alkyl-N-arylamino, decyloxy, amine Alkoxy, Ν-alkylamine methyl methoxy, Ν-arylamine methyl methoxy, hydrazine, hydrazine-dialkylamine methyl methoxy, hydrazine, fluorene-diarylamine methyl methoxy, Ν-Alkyl-fluorenyl-arylamine methyl methoxy, alkyl sulfonyloxy, aryl sulfonyloxy, decylthio, decylamino, fluorenyl-alkyl sulfhydryl, hydrazine Aryl mercaptoamine, ureido, Ν'-ureido, Ν', Ν'-dialkylureido, Ν'-arylureido, Ν', Ν'-diarylureido, Ν' -alkyl-Ν'-arylureido, Ν-alkylureido, Ν-arylureido, Ν'-alkyl-oxime-alkylurea, Ν' -alkyl-fluorene-arylureido, Ν', Ν'-dialkyl- phenylalkylurea, 1^', Q'-dialkyl-bualkylurea, ^, 『-dioxane Benzyl-arylurea, Ν'-aryl-hydrazine-alkylureido, Ν'-alkyl-oxime-arylureido, N',N'-diaryl-N-alkylureido, N ', N'-diaryl-N-arylureido, N'-alkyl-N'-aryl-N-alkylureido, etc., N'-alkyl-N'-aryl-N- Arylureido, alkoxy-41 - 200809406, carbonylamino, aryloxycarbonylamino, N-alkyl-N-alkoxycarbonyl, N-alkyl-N-aryloxy Amine, N-aryl-N-alkoxycarbonylamino, N-aryl-N-aryloxycarbonylamino, decyl, decyl, carboxy, alkoxycarbonyl, aryloxy Carbonyl, amine methyl sulfhydryl, N-alkylamine methyl sulfhydryl, N,N-dialkylamine methyl fluorenyl, N-arylamine carbhydryl, anthracene, fluorene-diarylamine carbhydryl, N -alkyl-N-arylaminecarbamyl, alkylsulfinyl, arylsulfinyl, alkylsulfonyl, arylsulfonyl, sulfonate (-S03H) and their conjugation Base (referred to as sulfonate), alkoxysulfonyl, amine sulfinyl, N-alkylamine sulfin N,N-dialkylamine sulfinyl, N-arylamine sulfinyl, N,N-diarylamine sulfinyl, N-alkyl-N-arylamine sulfin Sulfhydryl, amine sulfonyl, N-alkylamine sulfonyl, anthracene, fluorenyl-dialkylamine sulfonyl, N-arylamine sulfonyl, N,N-diarylamine sulfonyl, N-alkyl-N-arylamine sulfonyl, phosphonic acid (-P〇3H2) and its conjugated base (referred to as phosphonate), dialkylphosphonic acid group (a P03 (alkyl) 2 "Alkyl = decentral, the same as below", diarylphosphonic acid group (a P03 (aryl) 2) "aryl = aryl, the same as below", alkyl arylphosphonic acid group (a P03 (alkyl) (aryl )), a monoalkylphosphonic acid group (a P〇3 (alkyl)) and its conjugated base (referred to as an alkylphosphonate group), a monoarylphosphonic acid group (-P03H (aryl)) and A conjugate base (referred to as an arylphosphonate group), a phosphonic acidoxy group (a 〇ρ〇3η2) and a conjugated base thereof (referred to as a phosphonateoxy group), a dialkylphosphonic acid oxy group (“0P03H ( Alkyl) 2), diarylphosphonic acidoxy (mono OP03 (aryl) 2), alkyl aryl phosphonic acid oxy (a OP 〇 3 (a | ky |) (aryl)), monoalkyl phosphonic acid Oxygen (—0卩0chuan (3丨1<71 )) and its conjugated base (referred to as alkylphosphonateoxy), monoarylphosphonate ("PO03H (aryl)) and its conjugated base (referred to as arylphosphonateoxy), cyanide Base, nitro, aryl, alkenyl, alkynyl, heterocyclic, decyl and the like. -42- 200809406 Specific examples of the alkyl group in the substituents, for example, may be the aforementioned alkyl group. Specific examples of the aryl group in the above substituent may be, for example, a phenyl group, a biphenyl group, a naphthyl group, a tolyl group, a xylyl group, a trimethylphenyl group, a cumyl group, a chlorophenyl group, or the like. Bromophenyl, chloromethylphenyl, hydroxyphenyl, methoxyphenyl, ethoxyphenyl, phenoxyphenyl, ethoxylated phenyl, benzhydryloxyphenyl, methylsulfide Phenyl, phenylthiophenyl, methylaminophenyl, dimethylaminophenyl, ethionylaminophenyl, carboxyphenyl, methoxycarbonylphenyl, ethoxycarbonylphenyl, phenoxy Phenylcarbonylphenyl, N-phenylamine-nonylphenyl, cyanophenyl, sulfophenyl, sulfonylphenyl, phosphonicphenyl, phosphonatephenyl, and the like. Further, specific examples of the alkenyl group in the above substituent may, for example, be a vinyl group, a 1-propenyl group, a 1-butenyl group, a cinnamyl group, a 2-chloro-1-ether group, etc.; Specific examples of the alkynyl group in the substituent may, for example, be ethynyl, 1-propynyl, 1-butynyl, trimethyldecylethynyl and the like. The heterocyclic group in the above substituent may, for example, be a pyridyl group, a piperidinyl group or the like. The decyl group in the above substituent may, for example, be a trimethyl decyl group or the like. In the above substituent, a fluorenyl group (RQ1CO -) may be contained; for example, it may be, for example, a hydrogen atom, a pharmaceutically acceptable group, an aryl group or the like. RQ1 of a mercapto group (RQ1CO-), for example, may be a hydrogen atom, and the aforementioned alkyl group, aryl group or the like. Among these substituents, it is more reasonable that -43 - 200809406 is a dentate atom (-F, -B", -C丨, -丨), alkoxy, aryloxy, alkylthio, Arylthio, N-alkylamino, hydrazine, hydrazine-dialkylamino, decyloxy, hydrazine-alkylamine methyl methoxy, fluorene-arylamine methyl methoxy, decylamino, formazan Base, fluorenyl, carboxy, alkoxycarbonyl, aryloxycarbonyl, amine carbaryl, fluorenyl-alkylamine, fluorene, hydrazine, hydrazine-dialkylamine, hydrazino, hydrazine Base, fluorenyl-alkyl-fluorene-arylamine, mercapto group, sulfonate group, sulfonate group, fluorenyl-alkylamine sulfonyl group, anthracene, fluorenyl-dialkylamine sulfonyl group, Anthracene-arylsulfonyl, anthracene, fluorene-diarylamine sulfonyl, phosphonic acid, phosphonate, dialkylphosphonic acid, diarylphosphonic acid, monoalkylphosphonic acid, An alkylphosphonate group, a monoarylphosphonate group, an arylphosphonate group, a phosphonic acidoxy group, a phosphonateoxy group, an aryl group, an alkenyl group, etc. On the other hand, an alkylene group in the above substituted alkyl group For example, it may be, for example, 2 of any one of the hydrogen atoms removed from the aforementioned alkyl group having 1 to 20 carbon atoms. The organic residue; for example, a linear alkyl group having 1 to 12 carbon atoms, a branched alkyl group having 3 to 12 carbon atoms, and a carbon number of 5 to 10; A preferred specific example of the substituted alkyl group obtained by combining a substituent with an alkylene group, for example, may be, for example, a chloromethyl group, a bromomethyl group or a 2-chloroethyl group. Base, trifluoromethyl, methoxymethyl, isopropoxymethyl, butoxymethyl, s-butoxybutyl, methoxyethoxyethyl, allyloxymethyl, Phenoxymethyl, methylthiomethyl, tolylthiomethyl, pyridylmethyl, tetramethylpiperidinylmethyl, indole-ethenyltetramethylpiperidinylmethyl, trimethyldecane Methyl, methoxyethyl, ethylaminoethyl, diethylaminopropyl, morpholinylpropyl, ethoxymethyloxy, benzhydryloxymethyl, fluorene-cyclohexylamine Methoxyethyl, Ν-phenylamine methyl methoxyethyl, ethionylaminoethyl, Ν-methylbenzhydrylaminopropyl, 2-oxoethoxy-44 - 200809406 , 2-sided oxypropyl, decylpropyl, methoxyethyl, propylene Alkyl butyl, chlorophenoxycarbonylmethyl, amine mercaptomethyl, N-methylamine, decylethyl, N,N-dipropylamine, decylmethyl, N-(A Oxyphenyl) amine methyl decyl ethyl, N-methyl-N-(phosphonophenyl) amine methyl decyl methyl, sulfonic acid butyl, sulfonyl butyl, sulfonyl butyl , N-ethylamine sulfonylmethyl, hydrazine, hydrazine-dipropylamine sulfonyl sulfonyl, hydrazino-anilinosulfonyl propyl, hydrazine-methyl-hydrazine-(phosphonophenyl)amine Sulfosyloctyl, phosphonic acid butyl, phosphonic acid hexyl, diethylphosphonic butyl, diphenylphosphonic propyl, methylphosphonic butyl, methylphosphonic butyl , tolylphosphonylhexyl, fluorenylphenylphosphonate hexyl, phosphonooxypropyl, phosphonitoxypropyl, benzyl, phenethyl, a-methylbenzyl, 1-methyl-1 -phenylethyl, ρ-methylbenzyl, cinnamyl, allyl, 1-propenylmethyl, 2-butenyl, 2-methylallyl, 2-methylpropenylmethyl, 2-propynyl, 2-butynyl, 3-butynyl and the like. The aforementioned aryl group, for example, may be a substance which forms a condensed ring from 1 to 3 benzene rings, a condensed ring formed of a benzene ring and a 5-membered unsaturated ring; specific examples, for example, for example It may be a phenyl group, a naphthyl group, an onion group, a phenanthryl group, an anthracenyl group, an indanyl group, a fluorenyl group or the like. Among these, a phenyl group and a naphthyl group are more preferable. The above substituted aryl group may have a group composed of a monovalent non-metal atom group other than a hydrogen atom as a substituent on the ring-forming carbon atom of the above-mentioned aryl group. Examples of preferred substituents, for example, may be the aforementioned alkyl group, substituted alkyl group, and exemplified as the substituent in the aforementioned substituted alkyl group. Preferred specific examples of the above substituted aryl group, for example, may be -45-200809406 to be biphenyl, tolyl, xylyl, trimethylphenyl, cumyl, chlorophenyl, bromobenzene , fluorophenyl, chloromethylphenyl, trifluoromethylphenyl, hydroxyphenyl, methoxyphenyl, methoxyethoxyphenyl, allyloxyphenyl, phenoxyphenyl , methylthiophenyl, tolylthiophenyl, ethylaminophenyl, diethylaminophenyl, morpholinylphenyl, ethoxylated phenyl, benzhydryloxyphenyl, N- Cyclohexylamine methyl methoxy phenyl, N-phenylamine methyl methoxy phenyl, ethyl hydrazino phenyl, N -methyl benzyl phenyl phenyl, carboxy phenyl, methoxy Carbonylphenyl, allyloxycarbonylphenyl, chlorophenoxycarbonylphenyl, amine methyloxyphenyl, N-methylamine methyloxyphenyl, N,N-dipropylamine formazan Oxyphenyl, N-(methoxyphenyl)amine, methoxyphenyl, N-methyl-N-(sulfonylphenyl)amine, methoxyphenyl, sulfonylphenyl, Sulfonic acid phenyl, acesulfonyl phenyl, N-ethylamine sulfonyl phenyl, hydrazine, -dipropylaminesulfonylphenyl, fluorenyl-tolylaminesulfonylphenyl, fluorenyl-methyl-hydrazine-(sulfonylphenyl)amine sulfonylphenyl, phosphophenyl phenyl, phosphine Acid-based phenyl, diethylphosphonic phenyl, diphenylphosphonic phenyl, methylphosphonic phenyl, methylphosphonic phenyl, tolylphosphonic phenyl, tolyl phosphine Acid-based phenyl, allylphenyl, 1-propenylmethylphenyl, 2-butenylphenyl, 2-methylallylphenyl, 2-methylpropenylphenyl, 2-propenyl Alkynylphenyl, 2-butynylphenyl, 3-butynylphenyl, and the like. The above alkenyl group, the aforementioned substituted alkenyl group, the aforementioned alkynyl group and the above substituted alkynyl group (a C(R02) = C(R03)(R〇4, 〇, n05, , ) and a Ce C(R05) For example, it may be, for example, RQ2, RQ3, R〇4 and R5 which are radicals composed of monovalent non-metal radicals. The aforementioned RQ2, RQ3, and R. 4 and r〇5 , for example, may be a hydrogen atom, a halogen atom, an alkyl group, a substituted alkyl group, an aryl group, or a substituent. Specific examples of such, for example, may be exemplified by the examples described. Among these, a specific example is a hydrogen atom, a halogen atom, a linear alkyl group having a number of 1 to 10, a branched alkyl group, or a cyclic alkyl group. For example, it may be ethylene. Base, group, 1-butenyl, 1-pentenyl, 1-hexenyl, 1-octenyl, 1-E propenyl, 2-methyl-1-propenyl, 2-methyl-1 a butenyl group, a 2-phenyl 3 alkenyl group, a 2-chloro-1-vinyl group, an ethynyl group, a 1-propynyl group, a 1-butynyl ethynyl group or the like. The heterocyclic group, for example, may be, for example, a pyridyl group or the like which is exemplified as a substituent. The aforementioned oxy group (R^O-), for example, may be a desired substituted oxy group of a group consisting of a monovalent non-metal atomic group other than a hydrogen atom, for example, it may be an alkane Oxy, decyloxy, carbamoyloxy, N-alkylamine, decyloxy, N-methylindolyloxy, N,N-di-systemylamine, fluorenyloxy, ν, Ν-Diaryloxy, Ν-alkyl-Ν-arylamine, fluorenyloxy, alkylsulfonic acid arylsulfonyloxy, phosphonic acidoxy, phosphonic acidoxy, etc. . The alkyl group and the aryl group, for example, may be exemplified as an alkyl group, a substituted alkyl group, and an aryl group and a substituted aryl group. Further, a mercapto group (RQ7CO-) in the prooxy group, for example, r〇7 can be used as the alkyl group, the substituted alkyl group, and the aryl group and the object of the previous examples. Among these substituents, an alkoxy group, an aryloxy group or an arylsulfonic acid group is preferred. A specific example of a preferred substituted oxy group, a aryl group or the like is used as a procarbocarbon atom 〇 1-propene P-yl-1-S-1-ethyl or phenylalkyl R06. The aryloxyarylamine amine methyl methoxy group, and the like described above are aryl, methoxyoxy, -47-200809406 ethoxy, propoxy, isopropoxy, butyl Oxy, pentyloxy, hexyloxy, dodecyloxy, benzyloxy, allyloxy, phenethyloxy, carboxyethyloxy, methoxycarbonyloxy, ethoxycarbonyl Oxy, methoxyethoxy, methoxyethoxyethoxy, ethoxyethoxyethoxy, morpholinylethoxy, morpholinylpropoxy, allyloxy Ethoxyethoxy, phenoxy, tolyloxy, xylyloxy, tricyloxy, tricyloxy, isopropyloxy, methoxyphenyloxy, ethoxy Phenyloxy, chlorophenyloxy, bromophenyloxy, acetyloxy, benzhydryloxy, naphthyloxy, phenylsulfonyloxy, phenylsulfonylbenzene A group, a phosphonic acidoxy group, a phosphonate group oxy group, and the like. Also substituted with a mercapto substituted amine group (RG8NH-, (R^MR^^N-), for example, F^8, F^9, and a non-metal other than a hydrogen atom may be used. Further, F^9 and R151 may be linked to form a ring. Preferred examples of the substituted amine group may, for example, be an N-alkylamine group, N, N. a dialkylamino group, an N-arylamino group, an N,N-diarylamino group, an N-alkyl-N-arylamino group, a decylamino group, an N-alkyldecylamino group, N-aryldecylamino, ureido, Ν'-alkylureido, Ν', Ν'-dialkylureido, Ν'-arylureido, Ν', Ν'-diarylurea Base, Ν'-alkyl-Ν'-arylureido, Ν-alkylureido, Ν-arylureido, Ν'-alkyl-oxime-alkylureido, Ν'-alkyl-oxime -Arylureido, Ν', Ν'-dialkyl-oxime-alkylureido, Ν'-alkyl-1^-arylureido, 1^,1^'-dialkyl-cycloalkane Urea group, 1^', Q'-dialkyl-^-arylureido, Ν'-aryl-hydrazine-alkylureido, Ν'-aryl-fluorene-arylurea, Ν' ,Ν'-diaryl-fluorenyl-alkylurea, Ν', Ν'- Aryl-fluorene-arylureido, Ν'-alkyl-Ν'-aryl-hydrazine-alkylureido, Ν'-alkyl-Ν'-aryl-Ν-arylureido, alkoxy Carbonyl-48- 200809406 Amino, aryloxycarbonylamine, N-alkyl-hydrazine alkoxycarbonylamino, N-alkyl-N-aryloxycarbonylamino, N-aryl-N-alkoxycarbonylamine a base, an N-aryl-N-aryloxyamino group, etc. The alkyl group and the aryl group among these, for example, may be exemplified as the aforementioned alkyl group, substituted alkyl group, and The aryl group and the substituted aryl group; the fluorenyl group of the mercaptoamine group, the N-alkyldecylamino group, and the N-aryl fluorenylamino group (R07CO-) are as described above. Among them, More desirable examples are, for example, an N-alkylamino group, an N,N-dialkylamino group, an N-arylamino group, a mercaptoamine group, a specific example of a preferred substituted amine group, For example, 'methylamino, ethylamino, diethylamino, morpholinol, piperidinyl, pyridinyl, phenylamino, benzhydrylamino, ethyl fluorenyl Amine group, etc. Substituted sulfonyl group (RQ11 - S02 -), for example, RG11 can be used as a More preferably, for example, it may be an alkylsulfonyl group or an arylsulfonyl group. Among them, an alkyl group and an aryl group, for example, For example, it may be exemplified as the aforementioned alkyl group, substituted alkyl group, and aryl group and substituted aryl group. Specific examples of the substituted sulfonyl group such as, for example, it may be butyl sulfonate. Sulfhydryl, phenylsulfonyl, chlorophenylsulfonyl, etc. Sulfonate (a so3-), as mentioned above, means the conjugated base anion of a sulfonic acid group (-S03H), usually more suitable It is used together with the cation. Such a cationic system can be suitably selected by using a generally known object, for example, for example, it may be a key (for example, ammonium, sulfur, scaly, anthraquinone, acridine, etc.), Metal ions (for example, Na+, K+, Ca2+, Zn2+, etc.). Instead of a carbonyl group (RQ13 - CO-), for example, -49 - 200809406 rQ13 can be used as a group consisting of monovalent non-metal atomic groups. A preferred example of the substituted carbonyl group may, for example, be a fluorenyl group, a fluorenyl group, a carboxyl group, an alkoxycarbonyl group, an aryloxy group, an amine carbaryl group, an N-mercaptoamine fluorenyl group, N, N-Secondary amine carbamyl, N-aryl amide, hydrazine, hydrazine-diarylamine carbhydryl, hydrazine-alkyl- Ν'-arylamine carbaryl. The alkyl group and the aryl group among these are, for example, exemplified as the above-mentioned alkyl group, substituted alkyl group, aryl group and substituted aryl group. Among these, a preferred substituted carbonyl group is, for example, a decyl group, a fluorenyl group, a carboxyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an amine carbaryl group, a fluorenyl-alkylamine carbaryl group, an anthracene group, Anthracene-dialkylaminecarbamyl, fluorene-arylaminecarbamyl; more desirable examples, for example, it may be a decyl group, a fluorenyl group, an alkoxycarbonyl group or the like, and an aryloxycarbonyl group. Specific examples of the preferred substituted carbonyl group may, for example, be a methyl group, an ethyl fluorenyl group, a benzamidine group, a carboxyl group, a methoxycarbonyl group, an ethoxycarbonyl group, an allyloxycarbonyl group or a dimethylamino group. Phenyl ether carbonyl, methoxycarbonylmethoxycarbonyl, hydrazine-methylaminecarbamyl, anthracene-phenylaminecarbamyl, anthracene, fluorene-diethylamine methyl hydrazino, phenolyl carbonyl, and the like. Instead of the sulfinyl group (RQ14-SO-), for example, RQ14 may be used as a group composed of a monovalent non-metal atomic group. A preferred example, for example, may be an alkylsulfinyl group, an arylsulfinyl group, an amine sulfinyl group, an N-alkylamine sulfinyl group, an N,N-dialkyl group. Amine subunit, N-arylamine sulfinylene, anthracene, fluorenyl-diarylamine sulfinylene, N-homo-indole-arylamine sulfinyl group, and the like. The alkyl group and the aryl group among these are, for example, exemplified as the above-mentioned alkyl group, substituted alkyl group, aryl group and substituted aryl group. Among these, a more desirable example is an alkylsulfinyl group or an arylsulfinyl group. Specific examples of the substituted sulfinyl group like this, -50-200809406 For example, a suitable one is a hexylsulfinyl group, a benzylsulfinyl group, a tolylsulfinyl group or the like. The term "substituted phosphonic acid group" means that one or two hydroxyl groups on the phosphonic acid group are substituted by other organic side oxy groups; preferably, for example, it may be the aforementioned A dialkylphosphonic acid group, a diarylphosphonic acid group, an alkylarylphosphonic acid group, a monoalkylphosphonic acid group, a monoarylphosphonic acid group or the like. Among these, a dialkylphosphonic acid group or a diarylphosphonic acid group is more preferable. As a specific example of this, for example, it may be diethylphosphonic acid group, dibutylphosphonic acid group, diphenylphosphonic acid group or the like. The so-called phosphonate radical (-P〇3H2-, a po3h-), as described above, refers to the conjugated base anion derived from the first dissociation of the acid of the phosphonic acid group (-P03H2) or the second dissociation of the acid. the meaning of. Generally, it is preferred to use it together with a cation. Such a cationic system may be suitably selected from those generally used, for example, for example, it may be an anthracene (for example, ammonium, sulfur, scaly, anthraquinone, acridine, etc.), Metal ions (for example, Na+, K+, Ca2+, Zn2+, etc.). The so-called substituted phosphonate group may be a conjugated base anion group in which a hydroxyl group within a phosphonic acid group is substituted into an organic pendant oxy group; for example, for example, it may be a monoalkyl group as described above Phosphonic acid group (mono P 〇 3H (alkyl)), monoarylphosphonic acid group (mono P 〇 3H (aryl)). Other specific examples of the above-described anthracene derivative, for example, may be a compound disclosed in JP-A-2001-233842, JP-A-2004-534797, and JP-A-2002-51 9732, and the like. A compound represented by the following structural formula or the like. 3200809406
〇 N-O-C-CH〇 N-O-C-CH
〇 N-〇-ϋ - CH3〇 N-〇-ϋ - CH3
-52 - 200809406 在上述之構造式中,R係代表η — C 3 Η 7 ' η — C8H17、棒 腦、及Ρ — CH3C6H4中之任一者。 0 〇 II Μ-52 - 200809406 In the above structural formula, R represents any of η - C 3 Η 7 ' η - C8H17, rod brain, and Ρ - CH3C6H4. 0 〇 II Μ
在上述之構造式中,R係代表n—C3H7及p—CH3C6H4 中之任一者。 0In the above structural formula, R represents any of n-C3H7 and p-CH3C6H4. 0
cogh3 I 0Cogh3 I 0
XNXN
-53 - 3200809406 ο-53 - 3200809406 ο
3 Ν 力-C〇C3H73 Ν force-C〇C3H7
-54 200809406-54 200809406
H3x.N-0-C0CH3 ch3v.n-o-coch3 Λ Λ υ V - I OC12H25 s-^^-ch3 N-O-關3 c2h5v^n-o-coch3 Λ Λ v V och3 och3 ch3_n-o-coc2h5 ch3v.n-o-coc3h7 ch3、^n-o-co2ch3 ch3x^n-o-co2c2h5 Λ Λ X Λ V V u V och3 och3 Xh3 och3H3x.N-0-C0CH3 ch3v.no-coch3 Λ Λ υ V - I OC12H25 s-^^-ch3 NO-off 3 c2h5v^no-coch3 Λ Λ v V och3 och3 ch3_n-o-coc2h5 ch3v.no-coc3h7 Ch3,^no-co2ch3 ch3x^no-co2c2h5 Λ Λ X Λ VV u V och3 och3 Xh3 och3
CH3vN - 0-C0N(C2H5)2 OCH3 在前述感光性組成物中,中性游離基產生劑之含量較宜 是0.1〜25質量%,更宜是0.5〜20質量%,更理想是0.5 〜1 5質量%,特佳爲1〜1 0質量份。 一其他的光聚合起始劑一 -55 - 200809406 前述之其他的光聚合起始劑,只要是具有啓動前述聚合 性化合物之聚合的能力即可,並沒有特別地限定,雖然可以 從公知的光聚合起始劑中適當地選擇,然而,例如,較宜是 對於紫外線到可見光具有感光性之物,可以是和光激發之增 感劑發生任何作用而生成活性游離基之活性劑,也可以是按 照單體的種類而啓動陽離子聚合之起始劑。 又,前述之光聚合起始劑較宜是含有至少1種的在約 300〜800奈米(更宜是330〜500奈米)的範圍內具有至少約 50之分子吸光係數的成分。 前述之其他的光聚合起始劑,舉例來說,例如其可以是 鹵化烴衍生物(例如,具有三畊骨架之物、具有噚二唑骨架 之物等)、六芳基聯咪唑、酮縮醇化合物、羥基烷基酮化合 物、有機過氧化物、硫化合物、酮化合物、吖啶化合物、金 屬茂類等。此等之中,從感光層之感度、保存性、及感光層 和基板間之密接性等觀點來看,較宜是具有酮化合物及吖啶 化合物。 前述之其他的光聚合起始劑,具體而言,舉例來說,例 如,其可以是在特開2005— 258431號公報之〔0288〕〜〔 02 99〕及〔0305〕〜〔03 07〕上所記載的化合物等。 前述之酮縮醇化合物,舉例來說,例如,其可以是苄基 甲基酮縮醇之Irgacure 651等。 前述之羥基烷基酮化合物,舉例來說,例如,其可以是 Irgacure 184、Darocure 1173、Irgacure 2959、Irgacure 127 等之羥基烷基苯酮。 -56- 200809406 前述之有機過氧化物,舉例來說,例如其可以是3,3’,4, 4’-肆(t-丁基過氧羰基)二苯甲酮等。 前述之硫化合物,舉例來說,例如其可以是2-苯甲醯基 亞甲基-3 -甲基萘并噻唑啉等。 在前述之感光層中,含有前述醯基氧化膦化合物及肟衍 生物之光聚合起始劑的全部含量較宜是0.1〜30質量%,更 宜是0.5〜20質量。/〇,特佳爲0.5〜15質量。/〇。 < (D)熱交聯劑〉 前述之熱交聯劑並沒有特別地限定,可以按照目的而適 當地選擇,爲了改良使用前述之感光性薄膜形成的感光層硬 化後之膜強度的目的,則在不對於顯像性產生不良影響之範 圍內,例如,可以使用1分子內具有至少2個環氧乙烷基之 環氧化合物、1分子內具有至少2個氧雜環丁烷基之氧雜環 丁烷化合物。 前述之在1分子內具有至少2個環氧乙烷基之環氧化合 物,舉例來說,例如其可以是聯二甲苯酚或聯酚型環氧樹脂 (「YX40 00,日本環氧樹脂公司製」等)或此等之混合物;具 有異三聚氰酸酯骨架之雜環型環氧樹脂(「TEPIC,日產化學 工業公司製」、「阿拉路易特PT810,汽巴特殊化學品公司 製」等)、雙酚A型環氧樹脂、酚醛清漆型環氧樹脂、雙酚F 型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚S型環氧樹脂、 苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、鹵化 環氧樹脂(例如,低溴化環氧樹脂、高鹵化環氧樹脂、溴化 苯酚酚醛清漆型環氧樹脂等)、含芳基之雙酚A型環氧樹脂、 -57- 200809406 三苯酚甲烷型環氧樹脂、二苯基二羥甲基型環氧樹脂、二苯 基雙伸苯基型環氧樹脂、具有二環戊二烯型環氧樹脂 (「HP-7200、HP-7200H,大曰本油墨化學工業(股)公司製」 等)、縮水甘油基胺型環氧樹脂(二胺基二苯基甲烷型環氧樹 脂、二縮水甘油基苯胺、三縮水甘油基胺基苯酚等)、縮水 甘油基醚型環氧樹脂(酞酸二縮水甘油酯、己二酸二縮水甘 油酯、六氫酞酸二縮水甘油酯、二聚物酸二縮水甘油酯等)、 受阻胺型環氧樹脂、脂環式環氧樹脂(3,4-環氧基環庚基甲基 _3’,4’_環氧基環庚烷羧酸酯、雙(3,4-環氧基環庚基甲基)己 二酸、二環戊二烯環氧化物、「GT— 300、GT— 400、 ZEHPE3150 ;戴西爾化學工業製」等)、醯亞胺型脂環式環 氧樹脂、三羥基苯基甲烷型環氧樹脂、雙酚A酚醛清漆型環 氧樹脂、四苯基乙烷型環氧樹脂、酞酸縮水甘油酯樹脂、四 縮水甘油基二甲苯酚乙烷樹脂、含萘基之環氧樹脂(萘酚芳 烷基型環氧樹脂、萘酚酚醛清漆型環氧樹脂、4官能萘型環 氧樹脂,市售品有「ESN— 190、ESN— 360,新日鐵化學公 司製」、「HP— 4032、EXA— 4750 與 EXA— 4700,大日本 油墨化學工業公司製」等)、由苯酚化合物和二乙烯基苯或 二環戊二烯等之二烯烴化合物間之加成反應所得到的多酚 化合物、與表氯醇間之反應物、以過醋酸等將4-乙烯基環庚 烷-1-氧化物之開環聚合物予以環氧化者、具有直鏈狀含磷 構造之環氧樹脂、具有環狀含磷構造之環氧樹脂、α '甲基 芪型液晶型環氧樹脂、二苯甲醯氧基苯型液晶環氧樹脂、偶 氮苯基型液晶環氧樹脂、偶氮亞甲基苯基型液晶環氧樹脂、 -58- 200809406 聯萘基型液晶環氧樹脂、吖阱型環氧樹脂、甲基丙烯酸縮水 甘油酯共聚物環氧樹脂(「CP-50S與CP-50M,曰本油脂公 司製」等);環己基馬來醯亞胺與甲基丙烯酸縮水甘油酯之 環氧樹脂共聚物、雙(縮水甘油基氧苯基)莽型環氧樹脂、雙 (縮水甘油基氧苯基)金剛烷型環氧樹脂等。此等之環氧樹 脂,係可以單獨使用1種,也可以倂用2種以上。 又,除了前述之1分子內具有至少2個環氧乙烷基之前 述環氧化合物以外,可以使用至少在1分子中含有2個在/3 位上包含具有烷基的環氧基之環氧化合物,特佳爲含有占位 經烷基取代的環氧基(較具體而言,Θ -烷基取代縮水甘油基 等)之化合物。 前述之至少在Θ位上包含具有烷基的環氧基之環氧化 合物,可以是在1分子中所含有的2個以上之環氧基全部都 是Θ -烷基取代縮水甘油基,也可以是至少1個的環氧基是 /3 -烷基取代縮水甘油基。 前述之在Θ位上包含具有烷基的環氧基之環氧化合物 ,從室溫下之保存安定性的曲點來看,則於前述感光性組成 物內所含的前述環氧化合物總量之中,全部環氧基中的/3 -烷基取代縮水甘油基之比例,較宜是在3 0 %以上,更宜是 40%以上,特佳爲50%以上。 前述之/3 -烷基取代縮水甘油基並沒有特別地限定’可 以按照目的而適當地選擇,舉例來說,例如其可以是Θ -甲 基縮水甘油基、乙基縮水甘油基、/5-丙基縮水甘油基、 /3 - 丁基縮水甘油基等;此等之中,從提昇前述感光性樹脂 -59- 200809406 組成物之保存安定性之觀點、及合成容易性之觀點來看,較 是沒-甲基縮水甘油基。 前述之在θ位上包含具有烷基的環氧基之環氧化合物 ,例如,較宜是由多價苯酚化合物和/3 -烷基表鹵醇所衍生 的環氧化合物。 前述之Θ -烷基表鹵醇並沒有特別地限定,可以按目的 而適當地選擇,舉例來說,例如其可以是/3 -甲基表氯醇、 冷-甲基表溴醇、Θ -甲基表氟醇等之0 -甲基表鹵醇;/3 -乙 基表氯醇、/3 -乙基表溴醇、石-乙基表氟醇等之/3-乙基表鹵 醇;Θ -丙基表氯醇、Θ -丙基表溴醇、/3 -丙基表氟醇等之/3 -丙基表鹵醇;/3 - 丁基表氯醇、/3 - 丁基表溴醇、Θ - 丁基表 氟醇等之/3-丁基表鹵醇等。此等之中,從與前述多價苯酚 間之反應性及流動性的觀點來看,較宜是使用Θ -甲基表氯 醇。 前述之多價苯酚化合物,只要是在1分子中含有2以上 的芳香族性羥基的化合物即可,並沒有特別地限定,可以按 目的而適當地選擇,舉例來說,例如其可以是雙酚A、雙酚 F、雙酚S等之雙酚化合物;聯酚、四甲基酚等之聯酚化合 物;二氫萘、聯萘酚等之萘酚化合物;苯酚-甲醛縮聚物等 之酚醛清漆樹脂;甲酚-甲醛縮聚物等之碳數爲1〜1〇之單 烷基取代苯酚-甲醛縮聚物;二甲酚-甲醛縮聚物等之碳數爲 1〜10之二烷基取代苯酚-甲醛縮聚物;雙酚A-甲醛縮聚物 等之酚-甲醛縮聚物;苯酚和碳數爲1〜之單烷基取代苯 酌和甲醛之共縮聚物;以及苯酚化合物和二乙烯基苯之重加 -60 - 200809406 成物等。此等之中,例如,當以提昇流動性及保存安定性做 爲目的來選擇之情況下,較宜是前述之雙酚化合物。 前述之在/3位上包含具有院基的環氧基之環氧化合物 ,舉例來說,例如其可以是雙酚A的二-Θ -烷基縮水甘油醚 、雙酚F的二- /3-烷基縮水甘油醚、雙酚S的二- 烷基縮 水甘油醚等之雙酚化合物的二烷基縮水甘油醚;雙酚的 二-Θ -烷基縮水甘油醚、四甲基雙酚的二-/3 -烷基縮水甘油 醚等之雙酚化合物的二-Θ -烷基縮水甘油醚;二氫萘的二_ 冷-烷基縮水甘油醚、雙萘酚的二- /3-烷基縮水甘油醚等之萘 酚化合物的二-沒-烷基縮水甘油醚;苯酚-甲醛縮聚物的二-/3 -烷基縮水甘油醚;甲酚-甲醛縮聚物的二-Θ -烷基縮水甘 油醚等之碳數爲1〜1〇之單烷基苯酚-甲醛縮聚物的二-石-烷基縮水甘油醚;二甲酚-甲醛縮聚物的二-Θ -烷基縮水甘油 醚等之碳數爲1〜10之二烷基苯酚-甲醛縮聚物的二-0-烷 基縮水甘油醚;雙酚A-甲醛縮聚物的二-/3-烷基縮水甘油醚 等之酚-甲醛縮聚物的二-/3-烷基縮水甘油醚;以及苯酚化合 物和二乙烯基苯之聚加成物的二-Θ -烷基縮水甘油醚等。 此等之中,較宜是以下述構造(I )所代表雙酚化合物、 及其與表鹵醇等所得到的聚合物所衍生的Θ -烷基縮水甘油 醚、以及以下述構造(Π )所代表苯酚化合物-甲醛縮聚物之聚 -/3 -烷基縮水甘油醚。 ch3 ch3 •ch2 ch3 -〇—CH2rCH-CH2 OH . CH, 構造式(I) -61- 200809406CH3vN - 0-C0N(C2H5)2 OCH3 The content of the neutral radical generator in the photosensitive composition is preferably 0.1 to 25% by mass, more preferably 0.5 to 20% by mass, still more preferably 0.5 to 1%. 5 mass%, particularly preferably 1 to 10 parts by mass. Other photopolymerization initiators -55 - 200809406 The other photopolymerization initiators described above are not particularly limited as long as they have the ability to initiate polymerization of the above polymerizable compound, although known light can be used. The polymerization initiator is appropriately selected, however, for example, it is preferably a photosensitive material for ultraviolet light to visible light, and may be an active agent which generates any active radical with any action of a photoexcited sensitizer, or may be The initiator of cationic polymerization is initiated by the type of monomer. Further, the photopolymerization initiator is preferably a component containing at least one molecular absorption coefficient of at least about 50 in the range of about 300 to 800 nm (more preferably 330 to 500 nm). The other photopolymerization initiators mentioned above may be, for example, halogenated hydrocarbon derivatives (for example, those having a three-till skeleton, having an oxadiazole skeleton, etc.), hexaarylbiimidazole, ketone condensation An alcohol compound, a hydroxyalkyl ketone compound, an organic peroxide, a sulfur compound, a ketone compound, an acridine compound, a metallocene or the like. Among these, it is preferred to have a ketone compound and an acridine compound from the viewpoints of the sensitivity of the photosensitive layer, the preservability, and the adhesion between the photosensitive layer and the substrate. The other photopolymerization initiators described above, for example, may be, for example, those of [0288] to [02 99] and [0305] to [03 07] of JP-A-2005-258431. The compound or the like described. The ketal compound described above may, for example, be Irgacure 651 of a benzyl methyl ketal or the like. The aforementioned hydroxyalkyl ketone compound may, for example, be a hydroxyalkylphenone such as Irgacure 184, Darocure 1173, Irgacure 2959, Irgacure 127 or the like. The above organic peroxide may, for example, be 3,3',4,4'-fluorene (t-butylperoxycarbonyl)benzophenone or the like. The aforementioned sulfur compound may be, for example, 2-benzylidenemethylene-3-methylnaphthylthiazoline or the like. In the above-mentioned photosensitive layer, the total content of the photopolymerization initiator containing the above-mentioned mercaptophosphine oxide compound and rhodium derivative is preferably from 0.1 to 30% by mass, more preferably from 0.5 to 20% by mass. /〇, especially good for 0.5~15 quality. /〇. <(D) Thermal crosslinking agent> The above-mentioned thermal crosslinking agent is not particularly limited, and may be appropriately selected according to the purpose, and for the purpose of improving the film strength after curing of the photosensitive layer formed using the photosensitive film described above, In the range which does not adversely affect the developing property, for example, an epoxy compound having at least 2 ethylene oxide groups in one molecule and oxygen having at least 2 oxetane groups in one molecule can be used. Heterocyclobutane compound. The above epoxy compound having at least two ethylene oxide groups in one molecule, for example, it may be a dimethicone or a biphenol type epoxy resin ("YX40 00, manufactured by Nippon Epoxy Co., Ltd. </ RTI> or a mixture of these; a heterocyclic epoxy resin having a different isocyanate skeleton ("TEPIC, manufactured by Nissan Chemical Industries, Ltd.", "Ala Louise PT810, manufactured by Ciba Specialty Chemicals Co., Ltd." ), bisphenol A epoxy resin, novolac epoxy resin, bisphenol F epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol S epoxy resin, phenol novolak epoxy resin, Cresol novolak type epoxy resin, halogenated epoxy resin (for example, low brominated epoxy resin, highly halogenated epoxy resin, brominated phenol novolak type epoxy resin, etc.), aryl group-containing bisphenol A type ring Oxygen resin, -57- 200809406 trisphenol methane type epoxy resin, diphenyl dimethylol type epoxy resin, diphenyl double stretch phenyl type epoxy resin, dicyclopentadiene type epoxy resin ( "HP-7200, HP-7200H, Otsuka Ink Chemical Industry Co., Ltd. , etc.), glycidylamine type epoxy resin (diaminodiphenylmethane type epoxy resin, diglycidyl aniline, triglycidylamino phenol, etc.), glycidyl ether type epoxy resin (Glycidyl citrate, diglycidyl adipate, diglycidyl hexahydrophthalate, diglycidyl dimer acid, etc.), hindered amine type epoxy resin, alicyclic epoxy resin ( 3,4-Ethoxycycloheptylmethyl-3',4'-epoxycycloheptanecarboxylate, bis(3,4-epoxycycloheptylmethyl)adipate, bicyclo Pentadiene epoxide, "GT-300, GT-400, ZEHPE3150; made by Daisy Chemical Industry", bismuth imine type alicyclic epoxy resin, trishydroxyphenylmethane type epoxy resin, double Phenol A novolac type epoxy resin, tetraphenylethane type epoxy resin, glycidyl phthalate resin, tetraglycidyl xylenol ethane resin, naphthyl group-containing epoxy resin (naphthol aralkyl group) Type epoxy resin, naphthol novolac type epoxy resin, 4-functional naphthalene type epoxy resin, and commercial products include "ESN-190, ESN-360, Nippon Steel Chemical Co., Ltd., "HP-4032, EXA-4750 and EXA-4700, manufactured by Dainippon Ink Chemical Industry Co., Ltd.", phenol compounds and diolefins such as divinylbenzene or dicyclopentadiene a polyphenol compound obtained by an addition reaction between compounds, a reaction product with epichlorohydrin, or a ring-opening polymer of 4-vinylcycloheptane-1-oxide with peracetic acid or the like, having Epoxy resin with linear phosphorus-containing structure, epoxy resin with cyclic phosphorus-containing structure, α 'methyl fluorene type liquid crystal epoxy resin, benzophenoxy phenyl liquid crystal epoxy resin, azobenzene Base type liquid crystal epoxy resin, azomethylene phenyl type liquid crystal epoxy resin, -58- 200809406 Binaphthyl type liquid crystal epoxy resin, 吖 well type epoxy resin, glycidyl methacrylate copolymer epoxy Resin ("CP-50S and CP-50M, manufactured by Sakamoto Oil Co., Ltd."); epoxy resin copolymer of cyclohexylmaleimide and glycidyl methacrylate, bis(glycidyloxyphenyl)莽 type epoxy resin, bis(glycidyloxyphenyl) adamantane ring Resin. These epoxy resins may be used singly or in combination of two or more. Further, in addition to the above-mentioned epoxy compound having at least two ethylene oxide groups in one molecule, an epoxy group containing at least one epoxy group having an alkyl group at the /3 position in at least one molecule may be used. The compound is particularly preferably a compound containing an alkyl group-substituted epoxy group (more specifically, a fluorenyl-substituted glycidyl group). The epoxy compound containing an epoxy group having an alkyl group at least in the above-mentioned position may be one or more of the epoxy groups contained in one molecule, all of which are fluorene-alkyl substituted glycidyl groups, or At least one epoxy group is a /3-alkyl substituted glycidyl group. The above epoxy compound containing an epoxy group having an alkyl group at the oxime, and the total amount of the epoxy compound contained in the photosensitive composition is from the viewpoint of the stability of storage stability at room temperature. Among them, the proportion of the /3-alkyl group-substituted glycidyl group in all the epoxy groups is preferably at least 30%, more preferably 40% or more, and particularly preferably 50% or more. The aforementioned /3-alkyl substituted glycidyl group is not particularly limited' and may be appropriately selected depending on the purpose, for example, it may be Θ-methyl glycidyl group, ethyl glycidyl group, /5- Propyl glycidyl group, /3 - butyl glycidyl group, etc.; among these, from the viewpoint of enhancing the storage stability of the photosensitive resin-59-200809406 composition and the easiness of synthesis, It is not -methyl glycidyl. The foregoing epoxy compound containing an epoxy group having an alkyl group at the θ position, for example, is preferably an epoxy compound derived from a polyvalent phenol compound and a /3-alkylepihalool. The above-mentioned fluorene-alkyl epihalohydrin is not particularly limited and may be appropriately selected according to the purpose, and for example, it may be /3 -methylepichlorohydrin, cold-methylepibromohydrin, hydrazine - 0-methylepihalol such as methyl epifluorohydrin; /3-ethylepichlorohydrin, /3-ethylepichlorohydrin, stone-ethylepifluoroalcohol, etc. Θ-propyl epichlorohydrin, Θ-propyl epibromohydrin, /3-propylepiphenol, etc. /3-propylepihalohydrin; /3 - butyl epichlorohydrin, /3 - butyl /3-butyl epihalohydrin, such as epibromohydrin, hydrazine-butylperfluoroalcohol, and the like. Among these, Θ-methylepichlorohydrin is preferably used from the viewpoint of reactivity with the polyvalent phenol and fluidity. The polyvalent phenol compound is not particularly limited as long as it is a compound having 2 or more aromatic hydroxyl groups in one molecule, and may be appropriately selected according to the purpose. For example, it may be bisphenol. A, a bisphenol compound such as bisphenol F or bisphenol S; a biphenolic compound such as a biphenol or a tetramethylphenol; a naphthol compound such as a dihydronaphthalene or a binaphthol; a novolac such as a phenol-formaldehyde polycondensate; a monoalkyl-substituted phenol-formaldehyde polycondensate having a carbon number of 1 to 1 Å, a phenol-formaldehyde polycondensate or the like; a dialkyl-substituted phenol having a carbon number of 1 to 10, such as a xylenol-formaldehyde polycondensate. Formaldehyde polycondensate; phenol-formaldehyde polycondensate of bisphenol A-formaldehyde polycondensate; phenol and a monoalkyl-substituted benzene with a carbon number of 1~ and a copolycondensate of formaldehyde; and the weight of a phenol compound and divinylbenzene加-60 - 200809406 成成等. Among these, for example, when it is selected for the purpose of improving fluidity and preserving stability, it is preferred to use the aforementioned bisphenol compound. The foregoing epoxy compound having an epoxy group having a pendant group at the /3 position, for example, it may be a di-fluorene-glycidyl ether of bisphenol A or a bis-/3 of bisphenol F. a dialkyl glycidyl ether of a bisphenol compound such as an alkyl glycidyl ether or a di-alkyl glycidyl ether of bisphenol S; a di-hydrazine-alkyl glycidyl ether of bisphenol, and a tetramethyl bisphenol Di-indolyl-glycidyl ether of bisphenol compound such as bis-/3-alkyl glycidyl ether; di-cold-alkyl glycidyl ether of dihydronaphthalene, di-/3-alkane of bisnaphthol Di-non-alkyl glycidyl ether of a naphthol compound such as glycidyl ether; bis-/3-alkyl glycidyl ether of a phenol-formaldehyde polycondensate; di-anthracene-alkyl of a cresol-formaldehyde polycondensate a di-s-alkyl glycidyl ether of a monoalkylphenol-formaldehyde polycondensate having a carbon number of 1 to 1 Å, such as glycidyl ether; a di- fluorene-glycidyl ether of a xylenol-formaldehyde polycondensate; a di-O-alkyl glycidyl ether having a carbon number of 1 to 10 dialkylphenol-formaldehyde polycondensate; a phenol-formaldehyde such as a di-/3-alkyl glycidyl ether of a bisphenol A-formaldehyde polycondensate Polycondensate Two - / 3-alkyl ether; and poly -Θ two phenol compounds and divinylbenzene adducts - alkyl glycidyl ether. Among these, it is preferred to use a bisphenol compound represented by the following structure (I), a fluorene-alkyl glycidyl ether derived from a polymer obtained from an epihalohydrin or the like, and a structure (Π) A poly-/3-alkyl glycidyl ether represented by a phenol compound-formaldehyde polycondensate. Ch3 ch3 •ch2 ch3 -〇—CH2rCH-CH2 OH . CH, Structural formula (I) -61- 200809406
但,在前述之構造(I)中,R係代表氫原子及碳數爲1 〜6之烷基中之任一者,η係代表0〜20之整數。 但,在前述之構造(Π)中,R係代表氫原子及碳數爲1 〜6之烷基中之任一者,R”係代表氫原子及CH3中的任一者 。η係代表0〜20之整數。 此等在Θ位上包含具有烷基的環氧基之環氧化合物,係 可以1種單獨使用,也可以倂用2種以上。又,也可以在1 分子中具有至少2個環氧乙烷基的環氧化合物、以及在/3位 上包含具有烷基的環氧基之環氧化合物一起倂用。 前述之環氧化合物的骨架較宜是從雙酚型環氧樹脂、酚 醛清漆型環氧樹脂、脂環式基含有型環氧樹脂、及難溶性環 氧樹脂中所選取的至少1種。 前述之氧雜環丁烷化合物’舉例來說,例如其可以是雙 〔(3-甲基-3-氧雜環丁烷基甲氧基)甲基〕醚、雙〔(3-乙基-3-氧雜環丁烷基甲氧基)甲基〕醚、1,4-雙〔(3-甲基-3-氧雜環 丁烷基曱氧基)甲基〕苯、1,4_雙〔(3_乙基_3_氧雜環丁烷基 甲氧基)甲基〕苯、(3-甲基-3-氧雜環丁烷基)甲基丙烯酸酯、 (3-乙基-3-氧雜環丁烷基)甲基丙烯酸酯、(3-曱基-3-氧雜環 丁烷基)甲基甲基丙烯酸酯、(3-乙基_3·氧雜環丁烷基)甲基 甲基丙烯酸酯、或其寡聚物或共聚物等之多官能基氧雜環丁 -62 - 200809406 烷類以外的氧雜環丁烷基、酚醛清漆樹脂、聚(p-羥基苯乙 烯)、龐大外掛基型雙酚類、杯芳烴類、杯間苯二酚芳烴類、 與倍半矽氧烷等之具有羥基的樹脂等之間的醚化合物;除此 之外,具有氧雜環丁烷環之不飽和單體與(甲基)丙烯酸烷酯 之共聚物等。 又,爲了促進前述環氧化合物與前述氧雜環丁烷化合物 之熱硬化,舉例來說,例如可以使用胺化合物(例如,氰胍、 苄基二甲胺、4-(二甲胺基)-N,N-二甲基苄胺、4-甲氧基- Ν,Ν-二甲基苄胺、4-甲基-Ν,Ν-二甲基苄胺等),四級銨鹽化合物 (例如,氯化三乙基苄基銨等),嵌段異氰酸酯化合物(例如, 二甲胺等),咪唑衍生物二環式脒化合物及其鹽(例如,咪 唑、2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑、2-苯基 咪唑、4-苯基咪唑、1-氰基乙基-2-苯基咪唑、1-(2-氰基乙 基)-2-乙基-4-甲基咪唑等),磷化合物(例如,三苯膦等),胍 胺化合物(例如,三聚氰胺、胍胺、乙醯胍胺、苯并胍胺等), S-三哄衍生物(例如,2,4-二胺基-6-甲基丙烯醯氧基乙基_S-三哄、2-乙烯基-2,4-二胺基-S-三畊、2-乙烯基-4,6-二胺基 -S -三阱之異三聚氰酸加成物、2,4_二胺基-6-甲基丙烯醯氧 基乙基-S-三畊之異三聚氰酸加成物等)等。此等係可以單獨 使用1種’也可以倂用2種以上。另外,只要是前述環氧化 合物和前述氧雜環丁烷化合物之硬化觸媒,或者是可以促進 此等與羧基之反應者即可,並沒有特別地限定,也可以使用 上述以外的能夠促進熱硬化之化合物。 前述之能夠促進前述之環氧化合物、前述之氧雜環丁院 -63 - 200809406 化合物、以及此等與羧酸間之熱硬化的化合物,其在前述感 光性組成物固體成分中所佔的固體成分含量,通常是0.01 〜1 5質量%。 又,前述之熱交聯劑係可以使用特開平5-9407號公報 上所記載之聚異氰酸酯化合物;該聚異氰酸酯化合物係可以 從含有至少2個異氰酸酯基之脂肪族化合物、環式脂肪族化 合物、或芳香族基取代之脂肪族化合物衍生而得。具體而 言,舉例來說,例如其可以是2官能異氰酸酯(例如,1,3-伸苯基二異氰酸酯與1,4-伸苯基二異氰酸酯之混合物、2,4-與2,6-甲苯二異氰酸酯、1, 3-與1,4-二甲苯二異氰酸酯、雙 (4-異氰酸基苯基)甲烷、雙(4-異氰酸基乙醯基環己基)甲 烷、異佛爾酮二異氰酸酯、伸己基二異氰酸酯、三甲基伸己 基二異氰酸酯等),該2官能異氰酸酯、與三羥甲基丙烷、 季戊四醇、甘油等之多官能醇,該多官能醇之環氧烷之加成 物、與前述2官能異氰酸酯之加成物;伸己基二異氰酸酯、 伸己基-1,6-二異氰酸酯及其衍生物等之環形三聚物等。 更且,爲達成提昇本發明之感光性薄膜的保存性之目 的,也可以使用令前述之聚異氰酸酯及其衍生物之異氰酸酯 基與嵌段劑反應而得到的化合物。 前述之異氰酸基嵌段劑,舉例來說,例如其可以是醇類 (例如,異丙醇、tert-丁醇等)、內醯胺類(例如,ε-己內醯胺 等)、酹類(例如,酣、甲酹、p-tert-丁基酣、p-sec-丁基酣、 p-sec-胺基酚、p-辛基酚、p-壬基酚等)、雜環羥基化合物(例 如,3-羥基吡啶、8-羥基喹啉等)、活性亞甲基化合物(例如, -64- 200809406 丙二酸二烷酯、甲基乙基酮肟、乙醯丙酮、烷基乙醯乙酸酯 肟、丙酮肟、環己酮肟等)。除此之外,尙且可以使用特開 平6 - 2 9506 0號公報上所記載的在分子內具有至少1個可 聚合之雙鍵、及至少1個嵌段異氰酸酯基中之任一者的化合 物等。 又且,可以使用三聚氰胺衍生物來做爲前述之熱交聯 劑。該三聚氰胺衍生物,舉例來說,例如其可以是羥甲基三 聚氰胺、烷化羥甲基三聚氰胺(以甲基、乙基、丁基等將羥 甲基予以醚化之化合物)等。此等,係可以單獨使用1種, 也可以倂用2種以上。在此等之中,從保存安定性良好可、 有效提昇感光層之表面硬度或硬化膜本身之膜強度的觀點 來看,較宜是烷基化羥甲基三聚氰胺,特佳爲六甲基化羥甲 基三聚氰胺。 在前述感光性組成物固體成分之中,前述熱交聯劑之固 體成分含量較宜是1〜50質量%,更宜是3〜30質量%。當 該固體成分含量小於1質量7。時,硬化薄膜之薄膜強度無法 確認有增加,而當超過50質量%時,則會有顯影性降低及 曝光敏感度下降的情況。 又,從反應性之觀點來看,前述之熱交聯劑較宜是環氧 化合物。 < (E)彈性體> 前述之彈性體並沒有特別地限定,可以按照目的而適當 地選擇,例如,可以使用在國際公開第04/34147號手冊之 (006 1 ]〜〔0073〕上所記載的化合物等。 -65 - 200809406 < (F)苯氧樹脂> 前述之苯氧樹脂並沒有特別地限定,可以按照目的而適 當地選擇,例如,可以使用在國際公開第04/34147號手冊 之〔0074〕〜〔0078〕上所記載的化合物等。 < (G)增感劑〉 前述之增感劑,從提高在該曝光及顯像後不改變該感光 層之曝光部分的厚度之前述光的最小能量(感度)之觀點來 看,特佳是在將前述之感光層予以曝光顯像的情況下一起倂 前述之增感劑係可以配合前述之光照射機構(例如,可 見光線或紫外光及可見光雷射等)而適當地選擇。 前述之增感劑係可以利用活性能量線而成爲激發狀態 ,藉由與其他的物質(例如,游離基產生劑、酸產生劑等)間 之相互作用(例如,能量移動、電子移動等)而產生游離基或 酸等之有用基。 前述之增感劑係包括從縮環系化合物、胺基苯基酮系化 合物、多核芳香族類、具有酸性核之物、具有鹼基性核之物、 具有螢光增白劑核之物中所選擇的至少1種,視情況需要, 也可以含有其他的增感劑。增感劑,從提昇感度之觀來看, 更宜是雜縮環系化合物、胺基苯并苯酮系化合物,特佳爲雜 縮環系化合物。 一縮環系化合物一 在前述所例示的化合物之中,芳香族環及雜環爲縮環的 化合物(縮環系化合物)較宜是雜縮環系化合物。前述所謂之 -66- 200809406 雜縮環系化合物,係意味著在環之中具有雜元素的多環式化 合物之意;較宜是在前述之環之中含有氮原子。前述之雜縮 環系化合物,舉例來說,例如其可以是雜縮環系酮化合物。 在前述之雜縮環系酮化合物之中’更宜是吖啶酮化合物及噻 噸酮化合物;而於此等之中’特佳爲噻噸酮化合物。 前述之雜縮環系酮化合物的具體例子’舉例來說,例如 其可以是吖啶酮、氯吖啶酮、N -甲基吖啶酮、N -丁基吖啶酮 、N - 丁基-氯吖啶酮等之吖啶酮化合物;噻噸酮、異丙基噻 噸酮、2,4 -二乙基噻噸酮、1-氯-4 -丙氧基噻噸酮、 QuantacureQTX等之噻噸酮化合物;3-(2-苯并呋喃甲醯基 )-7-二乙基胺基香豆素、3-(2-苯并呋喃甲醯基)-7-(1-吡咯啶 基)香豆素、3-苯甲醯基-7-二乙基胺基香豆素、3-(2-甲氧基 苯甲醯基)-7-二乙基胺基香豆素、3-(4-二甲基胺基苯甲醯基 )-7-二乙基胺基香豆素、3,3’-羰基雙(5,7-二-n-丙氧基香豆 素)、3,3’-羰基雙(7-二乙基胺基香豆素)、3-苯甲醯基-7-甲 氧基香豆素、3-(2-呋喃甲醯基)-7-二乙基胺基香豆素、3_ (4-二乙基胺基肉桂醯基)-7-二乙基胺基香豆素、7-甲氧基-3-(3 吡咯啶基羰基)香豆素、3-苯甲醯基-5,7-二丙氧基香豆素、 7-苯并三唑-2-基香豆素、7-二乙基胺基-4-甲基香豆素、又 於特開平5— 19475號、特開平7— 271028號、特開2002 一 363206 號、特開 2002—363207 號、特開 2002—363208 號、特開2002— 363209號公報等上所記載的香豆素化合物 等之香豆素類等。 又,舉例來說,例如,其可以是公知的多核芳香族類( -67- 200809406 例如,芘、茈、三鄰亞苯)、咕噸類(例如,螢光素、曙紅、 紅黴素、若丹明B、孟加拉玫瑰紅)、花青類(例如,吲哚喹 啉羰花青、硫喹啉羰花青、噚喹啉羰花青)、部花青類(例如 ,部花青、羰部花青)、噻阱類(例如,勞氏紫、亞甲基藍、 甲苯胺藍)、蒽醌類(例如,蒽醌)、方形鑰類(例如,方形鑰) 等。 前述之增感劑之含量,相對於感光性薄膜用感光性組成 物的總成分計,較宜是〇 · 〇 1〜4質量。/。,更宜是〇 . 02〜2質 量%,特佳爲〇 . 〇 5〜1質量%。 當前述之含量小於〇.〇1質量%時,感度就下降;當超過 4質量%時,圖案形狀就會惡化。 前述之感光性組成物中的前述增感劑、與光聚合起始劑 之含量的質量比,較宜是〔(增感劑)/(光聚合起始劑)〕= 1/〇·1 〜1 /1 00,更宜是1 /1〜1 /50。 當前述之增感劑的含量和前述光聚合起始劑的含量之 質量比係在上述之範圍外時,就會有感度下降的情形’且感 度的經時變化會有惡化的情形。 前述之增感劑和前述之光聚合起始劑的組合,從高感度 化之觀點來看,特佳爲噻噸酮化合物和肟衍生物間之組合。 又,前述之肟衍生物也可以和其他的中性游離基產生劑、部 分構造中含有少量之胺基烷基及胺基苯基之光聚合起始劑 系化合物。 < (Η)其他的成分〉 前述之其他成分,舉例來說,例如其可以是熱聚合禁止 -68- 200809406 劑、可塑劑、著色劑(著色顏料或染料)、塡充顏料等;更且, 也可以和基材表面之密接促進劑及其他的助劑類(例如,導 電性粒子、充塡劑、消泡劑、難燃劑、整平劑、剝離促進劑、 香料、表面張力調整劑、鏈移動劑等)一起倂用。藉由適當 地含有此等成分,即可以達到調整感光性薄膜之安定性、寫 真性、膜物性等性質之目的。 一熱聚合禁止劑一 前述之熱聚合禁止劑,可以是爲了防止前述聚合性化合 物的熱聚合或經時聚合之目的而添加。 前述之熱聚合禁止劑,舉例來說,例如其可以是4-甲 氧基酚、氫醌、經烷基或芳基取代之氫醌、t-丁基兒茶酚、 苯三酚、2-羥基二苯甲酮、4-甲氧基-2-羥基二苯甲酮、氯化 亞銅、苯并噻阱、氯醌、萘胺、β-萘酚、2,6_二丁基-4-甲酚、2,2’-亞甲基雙(4-甲基- 6-t-丁基酚)、吡啶、硝基苯、 二硝基苯、苦味酸、4-甲苯胺、亞甲基藍、銅與有機螫合劑 之反應產物、柳酸甲酯和苯并噻阱、亞硝基化合物、及亞硝 基化合物與AI之螯合物等。 前述之熱聚合禁止劑的含量,相對於聚合性化合物計’ 較宜是〇·〇〇1〜5質量%,更佳爲0·005〜2質量。/°’特佳爲 0.0 1〜1質量% 〇 當前述之含量小於0 ·0 01質量。/。時’就會有保存安定性 下降之情況,而當超過5質量%時,則對於活性能量線之感 度就有降低的情況。 一可塑劑一 -69- 200809406 前述之可塑劑’也可以是爲了控制前述之感光層的膜物 性(可撓性)之目的而添加。 前述之可塑劑,舉例來說’例如其可以是二甲基酞酸酯 、二丁基酞酸酯、二異丁基酞酸酯、二庚基酞酸酯、二辛基 酞酸酯、二環己基酞酸酯、貳十三基酞酸酯、丁基苄基酞酸 酯、二異癸基酞酸酯、二苯基酞酸酯、二烯丙基酞酸酯、辛 基癸醯基酞酸酯等之酞酸酯類,三乙二醇二乙酸酯、四乙二 醇二乙酸酯'二甲基葡萄糖酞酸酯、乙基酞基丁基乙醇酸酯 、乙基酞基乙基乙醇酸酯、甲基酞基乙基乙醇酸酯、丁基酞 基丁基乙醇酸酯、三乙二醇二辛酸酯等之二醇酯類;磷酸三 甲酚酯、磷酸三苯酯等之磷酸酯類;4-甲苯磺醯胺、苯磺醯 胺、N_n-丁基苯磺醯胺、N-n-丁基乙醯胺等醯胺類;己二酸 二異丁酯、己二酸二辛酯、癸二酸二甲酯、癸二酸二丁酯、 癸二酸二辛酯、壬二酸二辛酯、馬來酸二丁酯等之脂肪族二 鹼基酸酯類;檸檬酸三乙酯、檸檬酸三丁酯、丙三醇三乙醯 基酯、月桂酸丁酯、4,5-二環氧環己烷-1,2-二羧酸二辛酯等 ,聚乙二醇、聚丙二醇等之二醇類。 前述之可塑劑之含量,相對於前述之感光層的全部成分 計,較宜是〇·1〜50質量。/〇,更宜是0.5〜40質量%,特佳 爲1〜3 0質量%。 -著色顏料- 著色顏料並沒有特別地限定,可以依照目的而適當地選 擇;具體例子,舉例來說,例如其可以是維多利亞純藍 Β〇 (C_ 丨_ 4259 5)、金胺(C. I. 41000)、脂黑 HB (C· I. 2615 0)、 -70- 200809406 單顏料黃GT (C. I·顏料黃12)、永固黃GR (C. I·顏料黃 17)、永固黃HR (C. I.顏料黃83)、永固洋紅FBB (C. I·顏 料紅146)、霍斯特斑紅ESB (C. I.顏料紫1 9)、永固寶石 紅FBH (C. I.顏料紅11)、固著性超粉紅B (C· I·顏料紅 81)、單星堅牢性藍(C. I.顏料藍15)、單顏料堅牢性黑Β (Ο-ΐ·顏料黑 1) 、 碳黑、 C_ I·顏料紅 97 、 C· I·顏料紅 122 、 C. I. 顏料紅149、C. I.顏料紅168、C. I.顏料紅177、C. I.顏 料紅180、C. I.顏料紅192、C. I.顏料紅215、C. I.顏料 綠7、C. I.顏料綠36、C. I.顏料藍15:1、C· I·顏料藍15:4、 C·丨·顏料藍15:6、C.丨·顏料藍22、C· I·顏料藍60、與C· I. 顏料藍顏料藍 64。此等係可以單獨使用1種,也可以倂用 2種以上。又,視情況需要,可以使用從公知的染料中所適 當選取的染料。 在前述感光性組成物固體成分中之前述著色顏料的固 體成分含量,係可以考慮永久圖案形成時的感光層之曝光感 度及解像性而加以決定的,雖然會隨著色顏料的種類而有所 不同,然而一般較宜是〇.〇1〜1〇質量%,更佳爲〇·〇5〜5 質量%。 一塡充顏料一 在前述之感光性組成物中,可以視需要而添加以提昇永 久圖案之表面硬度、或抑制線膨脹係數之下降、或者抑制硬 化膜本身之介電率及介電正切之減低做爲目的之無機顏料 及有機微粒。 前述之無機顏料並沒有特別地限定,可以從公知物中適 -71 - 200809406 當地選擇,舉例來說,例如其可以是高嶺土、硫酸鋇、鈦酸 鋇、氧化矽粉、微粉狀氧化矽、氣相法矽石、非定形矽石、 結晶性矽石、熔融矽石、球狀矽石、滑石、黏土、碳酸鎂、 碳酸鈣、氧化鋁、氫氧化鋁、雲母等。 前述之無機顏料的平均粒徑較宜是小於1 〇微米,更宜 是在3微米以下。當該平均粒徑爲10微米以上時,則會有 因光散亂而使得解像度變差的情況。 前述之有機微粒子並沒有特別地限定,可以按照目的需 要而適當地選擇,舉例來說,例如其可以是三聚氰胺樹脂、 苯并胍胺樹脂、交聯聚苯乙烯樹脂等。又,可以使用由平均 粒徑爲0.01〜5微米、吸油量爲100〜200平方公尺/克左右 的矽石、交聯樹脂所形成的球狀多孔質微粒子等。 前述塡充顏料之添加量較宜是1〜60質量%。當該添加 量小於1質量%時,則就會有不能充分降低線膨脹係數之情 況;而當超過60質量%時,則在感光層表面上形成硬化膜 的情況下,該硬化膜之膜就會變脆;而在使用永久圖案形成 配線的情況下,則會有損害做爲配線的保護膜之功能。 一密接促進劑一 爲了提昇各層間之密接性、或感光層和基材間之密接 性,在各層上可以使用公知的所謂之密接促進劑。 前述之密接促進劑,舉例來說,例如合適者爲在特開平 5-11439號公報、特開平5-341532號公報、特開平6-43638 號公報等之上所記載的密接促進劑。具體的例子,舉例來 說,例如其可以是苯并咪唑、苯并噚唑、苯并噻唑、2-锍基 -72- 200809406 苯并咪唑、2-锍基苯并曙唑、2_锍基苯并噻唑、3-嗎啉基甲 基-1-苯基-三唑-2-酮、3-嗎啉基甲基-5-苯基-曙二唑-2-酮、 5 -胺基-3 -嗎啉基甲基-噻二唑-2 -酮、2 -锍基-5 -甲硫基-噻二 唑、三唑、四唑、苯并三唑、羧基苯并三唑、含胺基苯并三 唑、及矽烷偶合劑。 前述之密接促進劑的含量,相對於前述之感光層中的全 部成分計,較宜是0.001〜2〇質量。/〇,更佳爲〇_〇1〜10質 量%,特佳爲0.1〜5質量%。 (感光性薄膜) 本發明之感光性薄膜係至少具有支撐體、和形成於該支 撐體上之由前述本發明的感光性組成物構成之感光層’較宜 是具有視情況需要而適當地具有熱可塑性樹脂層等之其他 層而形成者。 <感光層> 前述之感光層係使用本發明之前述感光性組成物而形 成的。 在前述之感光性薄膜中,前述之感光層的設置位置並沒 有特別地限定,雖然可以按照目的而適當地選擇’然而通 常是被積層在前述的支撐體上。 前述感光層之感度,如以上所述,其係爲〇·1〜200 mJ/cm2,更宜是0.2〜100 mJ/cm2,特別理想是〇·5〜50 mJ/cm2。 前述感光層的厚度,如以上所述,較宜是1〜10〇微米 ,更宜是2〜50微米,特佳爲4〜30微米。 -73- 200809406 <支撐體及保護薄膜> 前述之支撐體並沒有特別地限定,可以視目的需要而適 當地選擇,然而較宜是可以剝離前述之感光層、且光透射性 良好之物;更宜是表面平滑性良好之物。前述支撐體及保護 薄膜,具體而言,例如,於特開2005 — 25843 1號公報之〔 0342〕〜〔0348〕上所記載者。 <其他的層> 前述感光性薄膜中之其他層並沒有特別地限定,可以按 照目的需而適當地選擇,舉例來說,例如,可以具有緩衝層 、氧氣遮斷層(pc層)、剝離層、黏合層、光吸收層、表面 保護層等之層。可以單獨具有此等層中之1種,也可以具有 2種以上。又,在前述之感光層上也可以具有保護薄膜。 一緩衝層一 前述之緩衝層並沒有特別地限定,可以按照目的需要而 適當地選擇;可以是對於鹼性液具有膨潤性乃至可溶性,也 可以是不溶性。 在前述之緩衝層對於鹼性液具有膨潤性乃至可溶性的 情況下,前述之熱可塑性樹脂,舉例來說,例如其可以是乙 烯和丙烯酸酯共聚物的皂化物、乙烯和(甲基)丙烯酸酯共聚 物的皂化物、乙烯基甲苯和(甲基)丙烯酸酯共聚物的皂化物 、聚(甲基)丙烯酸酯、(甲基)丙烯酸丁酯和乙酸乙烯酯等之( 甲基)丙烯酸酯共聚物等之皂化物、(甲基)丙烯酸酯和(甲基) 丙烯酸間之共聚物、苯乙烯和(甲基)丙烯酸酯和(甲基)丙燃 酸間之共聚物等。 -74- 200809406 在此情況下的熱可塑性樹脂的軟化點(Vicat)並沒有特 別地限定,可以按照目的需要而適當地選擇;例如,較宜是 80°C以下。 前述之軟化點爲80 °C以下之熱可塑性樹脂,舉例來說 ,例如除了上述之熱可塑性樹脂以外,其可以是「塑膠性能 便覽」(日本塑膠工業聯盟、全日本塑膠成形工業聯合會編 著、工業調查會發行、1968年10月25日發行)的軟化點爲 約80°C以下之有機高分子中的可溶於鹼性液者。又即使是 在軟化點爲80°C以上之有機高分子物質之中,也能夠藉由 在該有機高分子物質中添加具有與該有機高分子物質間之 相溶性的各種可塑劑,而可以將軟化點實質降低到80°C以 下。 又,在前述之緩衝層爲對於鹼性液具有膨潤性乃至可溶 性的情況下,前述之感光性薄膜的層間接合力並沒有特別地 限定,可以按照目的需要而適當地選擇;例如,較宜是在各 層的層間接合力之中,使得前述支撐體和前述緩衝層之間的 層間接合力成爲最小者。藉由使層間接合力成爲這樣,就即 可以只將前述支撐體從前述感光性薄膜剝離開來,並透過前 述緩衝層將前述感光層予以曝光之後,再使用鹼性顯像液使 該感光層顯像。又,也可以在使所殘留的前述支撐體照原樣 地進行前述感光層之曝光後,再從前述感光性薄膜而只將前 述支撐體予以剝離,並使用鹼性的顯像液將該感光層予以顯 像。 前述之層間接合力的調整方法並沒有特別地限定,可以 -75 - 200809406 述良 前 改 在接 以密 可、 , 質 如物 例卻 , 冷 說過 來' ο 例物法 舉合方 •’聚之 擇的等 選種劑 地各型 當加離 適添、 而中劑 要脂性 需樹活 的性面 目塑界 照可 、 按熱劑 前述之可塑劑並沒有特別地限定,可以按照目的需要而 適當地選擇;舉例來說,例如,其可以是聚丙二醇、聚乙二 醇、酞酸二辛酯、酞酸二庚酯、酞酸二丁酯、磷酸三甲苯酚 酯、磷酸甲苯酚基二苯酯、磷酸聯苯基二苯酯等之醇類或醚 類;甲苯磺醯胺等之醯胺類等。 在前述緩衝層對於鹼性液爲不溶性的情況下,前述熱可 塑性樹脂,舉例來說,例如,主成分係以乙烯當做必要共聚 合成分之共聚物。 前述之以乙烯做爲必要共聚合成分之共聚物,並沒有特 別地限定,可以按照目的需要而適當地選擇;舉例來說,例 如其可以是乙烯-乙酸乙烯酯共聚物(EVA)、乙烯-丙烯酸乙 酯共聚物(EEA)等。 在前述緩衝層對於鹼性液爲不溶性的情況下,前述之感 光性薄膜的層間接合力並沒有特別地限定,可以按照目的需 要而適當地選擇;例如,較宜是在各層的層間接合力之中, 使得前述支撐體和前述緩衝層之間的層間接合力成爲最小 者。藉由使層間接合力成爲這樣,即可以將前述支撐體和緩 衝層從前述感光性薄膜剝離開來,並將前述感光層予以曝光 之後,再使用鹼性顯像液使該感光層顯像。又,也可以在使 所殘留的前述支撐體照原樣地進行前述感光層之曝光後,再 從前述感光性薄膜而將前述支撐體和前述緩衝層予以剝離 -76 - 200809406 ,並使用鹼性的顯像液將該感光層予以顯像。 前述之層間接合力的調整方法並沒有特別地限定,可以 按照目的需要而適當地選擇;舉例來說,例如,可以在前述 熱可塑性樹脂中添加公知的聚合物、過冷卻物質、密接改良 劑、界面活性劑、離型劑等之方法;舉例來說,例如,其可 以是以下所說明的調整乙烯共聚合比之方法等。 前述之以乙烯當做必要共聚合成分之共聚物中的乙烯 共聚合比,並沒有特別地限定,可以按照目的需要而適當地 選擇;例如,較宜是60〜90質量%,更宜是60〜80質量% ,特佳爲6 5〜8 0質量%。 當前述之乙烯的共聚合比變成小於60質量%時,前述 之緩衝層和前述感光層間的層間接合力就會變高,因而在該 緩衝層和該感光層的界面上進行剝離就會變得困難;而當超 過90質量%時,由於前述之緩衝層和前述感光層間的層間 接合力變小的緣故,所以該緩衝層和該感光層間就會非常容 易剝離,以致含有前述緩衝層的感光性薄膜之製造就會變得 困難。 前述之緩衝層之厚度並沒有特別地限定,可以按照目的 需要而適當地選擇;例如,較宜是5〜50微米,更宜是10 〜50微米,特佳爲15〜40微米。 當前述之厚度變爲小於5微米時,則對於基體表面中的 凹凸及氣泡等之凹凸順從性就會降低,因而不能形成高精細 的永久圖案;而當超過50微米時,則就會有在製造上產生 乾燥負荷增大等之不合適的情況。 -77 - 200809406 一氧氣遮斷層(PC層)~— 前述之氧氣遮斷層較宜是以一般的聚乙烯醇做爲主成 分來形成’較宜是厚度爲0.5〜5微米左右之被膜。 〔感光性薄膜之製造方法〕 前述之感光性薄膜,例如,係可以按照以下之作法來製 造。 首先’使包含於前述感光性組成物的材料溶解、乳化或 分散於水或溶劑中,進而調製成感光性樹脂組成物溶液。 前述之溶劑並沒有特別地限定,可以按照目的需要而適 當地選擇;舉例來說,例如其可以是甲醇、乙醇、η-丙醇、 異丙醇、η-丁醇、sec-丁醇、η-己醇等之醇類;丙酮、甲基 乙基酮、甲基異丁基酮、環己酮、二異丁酮等之酮類;醋酸 乙酯、醋酸丁酯、醋酸-η-戊酯、硫酸甲酯、丙酸乙酯、酞 酸二甲酯、安息香酸乙酯及甲氧基丙基乙酸酯等之酯類;甲 苯、二甲苯、苯、乙苯等之芳香族烴類;四氯化碳、三氯乙 烯、氯仿、三氯乙烷、二氯甲烷、單氯苯等之鹵化烴 類;四氫呋喃、二乙基醚、乙二醇單甲醚、乙二醇單乙醚、 1-甲氧基-2-丙醇等之醚類;二甲基甲醯胺、二甲基乙醯胺、 二甲亞颯、環丁颯等。此等可以1種單獨使用,也可以倂用 2種以上。另外,也可以添加公知的界面活性劑。 其次,藉由將前述之感光性樹脂組成物溶液塗布在前述 之支撐體上,使之乾燥而形成感光層,即可以製造感光性薄 膜。 前述感光性組成物溶液之塗布方法並沒有特別的限制 -78 - 200809406 ,可以依照目的需要而適當地選擇,舉例來說,例如其可以 是噴霧法、輥塗法、回轉塗布法、狹縫塗布法、擠壓塗布法 、簾幕塗布法、模具塗布法、凹槽輥塗布法、線棒塗布法、 刮刀塗布法等各種的塗布法。 前述乾燥之條件雖然是隨著各成分、溶劑之種類、使用 比例等而不同,然而通常是在60〜110 °C之溫度下經歷30 秒〜1 5分鐘左右。 前述之感光性薄膜,例如,捲曲成圓筒狀的捲芯,較宜 是捲成長尺狀的捲筒狀來保管。 前述之長尺狀的感光性薄膜之長度,並沒有特別地限 定,例如,可以從10〜20,000公尺範圍中適當地選取。又, 爲了讓使用者容易使用,也可以進行細縫加工而形成捲筒狀 之100〜1,000公尺範圍的長尺體。另外,在此情況下,較 宜是將前述之支撐體捲在最外側。又,也可以將前述之捲筒 狀感光性薄膜細分成薄片狀。保管時,從端面保護、防止端 面熔融的觀點來看,較宜是在端面上設置隔離物(特別是防 溼性物、裝有乾燥劑之物),又且也較宜使用梱包用及透溼 性低的素材。 (感光性積層體) 本發明之感光性積層體係在基體上至少具有由前述本 發明之感光性組成物形成的感光層,並視目的需要而適當 選擇的其他之層積層而成的。 <基體> 前述之基體,由於是形成感光層之被處理基體、或本發 -79- 200809406 明之感光性薄膜之至少轉印感光層的被轉印體,所以並沒有 特別地限定,係可以按照目的而適當地選擇,例如,可以從 表面平滑性高至具有凹凸表面之物中任意地選擇。較宜是板 狀基體,即使用所謂的基板。具體而言,舉例來說,例如其 可以是公知的印刷配線製造用基板(印刷基板)、玻璃板(鹼 玻璃板等)、合成樹脂樹脂性之薄膜、紙、金屬板等。 〔感光性積層體之製造方法〕 前述之感光性積層體之製造方法,舉例來說,例如,第 1態樣的將前述感光性組成物塗布於基材之表面上並進行乾 燥之方法,與第2態樣的至少對本發明之感光性薄膜中之感 光層,一邊進行加熱及加壓中的至少任一種,一邊進行轉印 來積層感光層之方法等。 前述之第1態樣的感光性積層體之製造方法係在前述 之基體上塗布及乾燥前述感光性組成物,並進行乾燥來形成 感光層。 前述之塗布及乾燥的方法並沒有特別地限定,可以視目 的需要而適當地選擇;舉例來說,例如,可以將前述感光性 組成物予以溶解、乳化或分散在水或溶劑中而調製成感光性 組成物溶液,並將該水溶液直接塗布於前述之基體之表面上 ,且進行乾燥、積層而成之方法。 做爲前述之感光性組成物溶液之溶劑,並沒有特別地限 定,可以按照目的需要而適當地選取,舉例來說,例如其可 以使用與在前述感光性薄膜中所使用者相同之溶劑。此等係 可單獨使用1種,也可以倂用2種以上。又,也可以添加公 -80- 200809406 知的界面活性劑。 前述之塗布方法及乾燥條件並沒有特別地限定,可以視 目的需要而適當地選擇,舉例來說,例如其可以使用與在前 述感光性薄膜中所使用者相同之方法及條件來進行。 前述之第2態樣的感光性積層體之製造方法,較宜是一 邊進行加熱及加壓中的至少任一種,一邊將本發明之感光性 薄膜積層在前述基體之表面上。另外,在前述之感光性薄膜 爲具有前述保護薄膜的情況下,較宜是剝離該保護薄膜,使 前述之感光層重合地積層於前述之基體上。 前述之加熱溫度並沒有特別地限定,可以按照目的需要 而適當地選擇,然而,例如,較宜是15〜180 °C,更宜是 60 〜140〇C 〇 前述加壓之壓力並沒有特別地限定,可以按照目的需要 而適當地選擇,然而,例如,較宜是0.1〜1.0 MPa,更宜 是 0_2 〜0.8 MPa。 進行前述加熱的至少任一種之裝置,並沒有特別地限定 ,可以按照目的需要而適當地選擇,然而,舉例來說,例 如適合的積層機(例如,大成積層機公司製之VP-丨丨、尼契苟 蒙筒股份有限公司製之VP130)等。 本發明之感光性薄膜及前述之感光性積層體,由於係藉 由使用本發明之感光性組成物的緣故,因而能夠高精細地形 成感度之好且生保存性優異的永久圖案,所以可適合使用於 保護膜、層間絕緣膜及耐焊圖案等之永久圖案等之各種圖案 形成用、彩色濾光片、柱材、肋材、間隔物、隔牆等之液晶 -81 - 200809406 構造組件之製造用、全息照相、微機械、驗證等之永久圖 案形成用途上,尤其,能夠非常適合使用於印刷基板之永 久圖案形成用途上。 尤其,本發明之感光性薄膜,由於該薄膜之厚度均一的 緣故,因而在形成永久圖案之際,即使將永久圖案(保護膜 、層間絕緣膜、及耐焊圖案等)予以薄層化,於高加速度試 驗(HAST)之中也能夠得到不產生離子遷移、耐熱性及耐溼性 均優異的高精細永久圖案的緣故,所以能夠更精細地進行向 基材之積層。 (圖案形成裝置及永久圖案形成方法) 本發明的圖案形成裝置係具備前述之感光層,至少具有 光照射機構和光調變機構。 本發明的永久圖案形成方法係至少包含曝光步驟,並包 含顯像步驟、硬化處理步驟等之其它步驟。 再者,本發明的前述圖案形成裝置,經由本發明的前述 圖案形成方法之説明,當已清楚而明白了。 <曝光步驟> 前述之曝光步驟係爲對於本發明之感光性薄膜中的感 光層進行曝光之步驟。本發明之前述的感光性薄膜及基材 之材料,係如以上所述。 前述曝光之對象,只要是前述感光性薄膜中的感光層就 好’雖然並沒有特別地限定,可以按照目的需要而適當地 選擇,然而,舉例來說,例如,如以上所述,較宜是對於 一邊經由對感光性薄膜進行加熱及加壓中之任一種、一邊 -82- 200809406 積層在基材上所形成的積層體來進行。 前述之曝光雖然並沒有特別地限定,可以按照目的需要 而適當地選擇,然而,例如,較宜是數位曝光、類比曝光 等;此等之中較佳爲數位曝光。 前述之類比曝光並沒有特別地限定,雖然可以按照目的 需要而適當地選擇,然而舉例來說,例如其可以是透過具 有預定圖案之負光罩,以高壓水銀燈、超高壓水銀燈、氙 燈等進行曝光之方法。 前述之數位曝光並沒有特別地限定,可以按照目的需要 而適當地選擇,例如,使用基於所形成的圖案形成資訊產 生控制信號、並隨著該控制信號所調變的光來進行;例如 ,較宜是對於前述之感光層,使用曝光頭,其係配備光照射 機構、及具有接受來自前述光照射機構的光並予以射出之η 個(但,η爲2以上之自然數)的2次元狀排列之圖素部、能 夠因應圖案資訊而控制前述之圖素部的光調變機構之曝光 頭,且係經配置以使得前述圖素部的列方向與該曝光頭的描 掃方向形成預定之設定傾斜角度β ;對於前述之曝光頭,藉 著使用圖素部指定機構,由可供使用的前述圖素部之中指定 使用於Ν次曝光(但,Ν爲2以上之自然數)的前述圖素部; 與對於前述之曝光頭,藉著圖素部控制機構,依照使得僅有 經前述使用圖素部指定機構所指定的前述圖素部參與曝光 之方式來進行控制前述圖素部;及使前述曝光頭相對於掃描 方向移動而對於前述感光層進行曝光之方法。 在本發明中,「Ν次曝光」係指在前述感光層上被曝光 -83 - 200809406 面的大約全部區域中,平行於前述曝光頭的掃描方向之直線 ,與該被曝光面上所照射的N條光點列(圖素列)係設定成交 叉而曝光。本文中,「光點列(圖素列)」係指當做由前述圖 素部所生成的圖素單位的光點(圖素)列之中,比前述曝光頭 的掃描方向的夾角小的方向之列。另外,前述之圖素部的配 置不一定非得是矩形格子狀,例如,可以是平行四邊形狀之 配置等。 本文中所述之「大約全部區域」,就各圖素部的兩側邊 緣部而論,其係由於使圖素部列呈傾斜而減少與平行於前述 曝光頭的掃描方向交叉的使用圖素部之圖素列的數量,所以 在此種情況下,即使是連接複數個曝光頭來使用,也會因該 曝光頭的安裝角度及配置等之誤差、而使得與平行於掃描方 向的直線交叉之使用圖素部之圖素部列的數量些微增減的 緣故,又且各使用圖素部之圖素部列間連繫的解像度分以下 之極少部分,由於安裝角度及圖素部配置等之誤差、而使得 沿著與掃描方向成垂直的方向之圖素部的節距不能與其他 部分之圖素部的節距嚴密地一致,因而與平行於掃描方向的 直線交叉之使用圖素部的圖素部列之數量乃在± 1的範圍內 增減所致。另外,在以下的說明之中,係將N爲2以上的自 然數之N次曝光統合稱爲「多次曝光」。更且,在以下的說 明之中,就以本發明之曝光裝置及曝光方法當做繪圖裝置及 繪圖方法來實施的形態而論,係使用「N次繪圖」及「多次 繪圖」之用語來做爲對應於「N次曝光」及「多次曝光」的 用語。 -84- 200809406 前述之N次曝光的N,只要是2以上的自然數即可,並 沒有特別地限定,可以按照目的需要而適當地選擇,然而較 宜是3以上之自然數,更宜是3以上7以下之自然數。 關於本發明之永久圖案形成方法的圖案形成裝置的一 個例子,舉例來說,例如,可以使用在特開2006 — 284842 號公報上之〔0028〕〜〔0139〕及〔0185〕〜〔0191〕所 記載的手段等。 <顯像步驟> 前述之顯像係一種藉由除去前述的感光層之未曝光部 分來進行。 前述未硬化區域之去除方法並沒有特別地限定,可以按 照目的需要而適當地選擇,舉例來說,例如其可以使用顯 像液予以除去之方法等。 前述之顯像液並沒有特別地限定,雖然可以按照目的需 要而適當地選擇,然而,舉例來說,例如其可以是鹼性液 、水系顯像液、有機溶劑等;於此等之中,較宜是弱鹼性 水溶液。該弱鹼性液之鹼成分,舉例來說,例如其可以是 氫氧化鋰、氫氧化鈉、氫氧化鉀、碳酸鋰、碳酸鈉、碳酸 鉀、碳酸氫鋰、碳酸氫鈉、碳酸氫鉀、磷酸鈉、磷酸鉀、 焦磷酸鈉、焦磷酸鉀、硼砂等。 前述弱鹼性水溶液之p Η値,舉例來說,例如較佳爲約 8〜1 2,更佳爲約9〜1 1。前述弱鹼性水溶液,舉例來說, 例如其可以是0.1〜5質量。/〇碳酸鈉水溶液或碳酸鉀水溶液 等。 -85- 200809406 前述顯像液之溫度,雖然可以適當地選擇合於前述感光 層之顯像性者,然而,例如,較佳爲約2 5 °C〜4 0 X:。 前述顯像液也可以倂用界面活性劑、消泡劑、有機鹼( 例如乙二胺、乙醇胺、氫氧化四甲銨、二伸乙三胺、三伸 乙五胺、嗎啉、三乙醇胺等)、或促進顯像用的有機溶劑( 例如醇類、酮類、酯類、醚類、醯胺類、內酯類等)等。又 ,前述顯像液可以是水或鹼水溶液與有機溶劑混合而成的 水系顯像液,亦可以是單獨的有機溶劑。 在前述圖案之形成中,例如,也可以含有硬化處理步驟 、蝕刻步驟、鍍敷步驟等。此等係可以單獨使用1種,也 可以倂甩2種以上。 <硬化處理步驟> 當前述之圖案形成方法爲進行保護膜、層間絕緣膜、耐 焊圖案等之永久圖案及彩色爐光片之形成的永久圖案形成 方法之情況下,前述之硬化處理步驟較宜是具備在進行前 述顯像步驟之後對於所形成的圖案中的感光層進行硬化處 理之步驟。 前述之硬化處理並沒有特別的限制,可以依照目的需要 而適當選擇,舉例來說,例如適合者有全面曝光處理、全 面加熱處理等。 前述之全面曝光的處理方法,舉例來說,例如在前述顯 像步驟之後,對於形成有前述永久圖案的前述積層體之全 面進行曝光的方法。藉由該全面曝光,可以促進形成前述 感光層的感光性組成物中之樹脂的硬化,並將前述永久圖 -86- 200809406 案的表面予以硬化。 進行前述全面曝光之裝置並沒有特別地限定,可以按照 目的需要而適當地選擇,舉例來說,例如適合者有超高壓 水銀燈等之UV曝光機、使用氙燈之曝光機、雷射曝光機等 。曝光量通常是10〜2,000 mJ/cm2。 前述之全面加熱的處理方法,舉例來說,例如其可以是 對於形成有前述永久圖案的前述積層體上進行全面加熱之 方法。藉由該全面加熱,可以提高前述永久圖案表面的膜 強度。 前述全面加熱之加熱溫度較宜是120〜250 °C,更宜是 1 2 0〜2 0 0 °C。當該加熱溫度小於1 2 0 °C時,則就得不到因 加熱處理而提高膜強度之效果;而當超過2 5 0 °C時,則前述 感光性組成物中的樹脂就會分解,並使得膜質變弱變脆。 上述全面加熱的加熱時間較佳爲10〜120分鐘,更佳 1 5〜6 0分鐘。 進行上述全面加熱的裝置並沒有特別的限制,舉例來說 ,例如其可以是從習知裝置中依照目的而適當地選擇,例 如爲乾燥烘箱、加熱板、I R加熱器等。 前述之圖案形成方法,係可以使用於防止在以405奈 米雷射曝光之直接繪圖時,由於氧氣所導致的感光層之感 度下降所必要的各種圖案之形成等,並且可以非常適合使 用於高密度化和高生產化兩者兼備之圖案形成。 就前述之永久圖案形成方法而言,當藉由前述之永久圖 案形成方法所形成的永久圖案爲前述保護膜、前述層間絕 -87- 200809406 緣膜時,則可以保護配線避免因外部引起的衝擊及彎曲, 特別是在前述層間絕緣膜的情況下,例如,係可以有效地 使用於如向多層配線基板、堆疊配線基板等按裝半導體或 零件之高密度實裝上。 本發明之前述的永久圖案形成方法,由於係使用本發明 之前述感光性組成物的緣故,因而可以適合使用於保護膜 、層間絕緣膜及耐焊圖案等之永久圖案等各種圖案之形成 用、彩色濾光片、柱材、肋材、隔離片、隔牆等之液晶構造 組件之製造、全息照相、微機器、驗證等之製造,特別是可 以適合使用於印刷基板之永久圖案形成用途上。 【實施例】 以下,藉由實施例更進一步具體地說明本發明,然而本 發明不因此等而受到限制。 (實施例1) 一感光性組成物之調製一 將各成分按照下述之量予以摻混而調製成感光性組成 物水溶液。 〔感光性組成物溶液之各成分量〕 • KAYARAD ZFR— 1492H (雙酚F型環氧丙烯酸酯、濃度爲 66%、日本化藥(股)公司製).......46·8質量份 •二季戊四醇六丙烯酸酯(聚合性化合物)· · · ·9質量份 • Irgacure 819( I -1、光聚合起始劑).....6質量份 •以下述構造式(1)所代表的增感劑(S-1)· · · 0·5質量份 •艾普特ΖΧ-1 059(熱交聯劑、東都化成公司製)· 6質量份 -88- 200809406 •艾普特ΥΡ-50(苯氧樹脂、東都化成公司製)· ·4質量份 •熱硬化促進劑(氰胍)..........0.77質量份 •氟系界面活性劑(梅伽法庫F-176、大日本油墨化學工業( 股)製、30質量%之2-丁酮溶液)......0.2質量份 •硫酸鋇分散液(堺化學工業公司製、Β-30)· · · ·80重量份 •甲基乙基酮...............30質量份 另外,上述硫酸鋇分散液係將28.5質量份之硫酸鋇(堺 化學工業(股)公司製、Β30)、15.6質量份之KAYARAD ZFR —1492 Η (雙酚F型環氧丙烯酸酯、濃度爲66%、日本化藥(股) 公司製)、28.2質量份之乙酸正丙酯、〇_2質量份之酞花青 綠預先混合之後,再以馬達硏磨機Μ-200(愛伽公司製)、使 用直徑爲1.0毫米之氧化鉻珠、於周速度爲9公尺/秒下進 行分散3 · 5小時調製而成。實施例1中的熱交聯劑之交聯基 和黏合劑之酸性的比例:熱交聯基/酸性基=0.5/1.0 = 0.5。However, in the above structure (I), R represents any one of a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and η represents an integer of 0 to 20. However, in the above structure (R), R represents any one of a hydrogen atom and an alkyl group having 1 to 6 carbon atoms, and R" represents either a hydrogen atom or CH3. The η system represents 0. The epoxy compound having an epoxy group having an alkyl group may be used singly or in combination of two or more kinds. Alternatively, it may have at least 2 in one molecule. An epoxy compound having an oxirane group and an epoxy compound containing an epoxy group having an alkyl group at the /3 position are used together. The skeleton of the above epoxy compound is preferably a bisphenol type epoxy resin. At least one selected from the group consisting of a novolak type epoxy resin, an alicyclic base type epoxy resin, and a poorly soluble epoxy resin. The aforementioned oxetane compound 'for example, for example, it may be double [(3-Methyl-3-oxetanylmethoxy)methyl]ether, bis[(3-ethyl-3-oxetanylmethoxy)methyl]ether, 1 , 4-bis[(3-methyl-3-oxetanyloxy)methyl]benzene, 1,4-bis[(3_ethyl_3_oxetanylmethoxy) Methyl]benzene, (3- Methyl-3-oxetanyl)methacrylate, (3-ethyl-3-oxetanyl)methacrylate, (3-mercapto-3-oxetane a polyfunctional oxetane-62 such as methyl methacrylate, (3-ethyl-3 oxetanyl) methyl methacrylate, or an oligomer or copolymer thereof - 200809406 Oxetane other than alkanes, novolac resin, poly(p-hydroxystyrene), bulky bisphenols, calixarenes, cup-resorcinol aromatics, and sesquiterpene An ether compound between a resin having a hydroxyl group such as oxane or the like; a copolymer of an unsaturated monomer having an oxetane ring and an alkyl (meth)acrylate, etc. Thermal hardening of the epoxy compound with the aforementioned oxetane compound, for example, an amine compound (for example, cyanogen, benzyldimethylamine, 4-(dimethylamino)-N,N-di can be used. Methylbenzylamine, 4-methoxy-hydrazine, hydrazine-dimethylbenzylamine, 4-methyl-hydrazine, hydrazine-dimethylbenzylamine, etc.), quaternary ammonium salt compound (for example, triethyl chloride) Base benzyl ammonium a blocked isocyanate compound (for example, dimethylamine, etc.), an imidazole derivative bicyclic hydrazine compound and a salt thereof (for example, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4- Methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-(2-cyanoethyl)-2-ethyl-4-methylimidazole Etc.), a phosphorus compound (for example, triphenylphosphine, etc.), a guanamine compound (for example, melamine, guanamine, acetamide, benzoguanamine, etc.), an S-triazine derivative (for example, 2,4- Diamino-6-methacryloxyethyl _S-triazine, 2-vinyl-2,4-diamino-S-trin, 2-vinyl-4,6-diamino -S - triple well isomeric cyanuric acid adduct, 2,4-diamino-6-methylpropenyloxyethyl-S-three-pronged isocyanuric acid adduct, etc.) . These may be used singly or in combination of two or more. In addition, as long as it is a curing catalyst of the epoxy compound and the oxetane compound, or a reaction with the carboxyl group can be promoted, it is not particularly limited, and heat other than the above can be used. Hardened compound. The above-mentioned epoxy compound, the above-mentioned oxetane-63-200809406 compound, and the compound which is thermally hardened with the carboxylic acid, which are solids in the solid content of the photosensitive composition The content of the component is usually from 0.01 to 15% by mass. Further, the above-mentioned thermal crosslinking agent may be a polyisocyanate compound described in JP-A-5-9407, and the polyisocyanate compound may be an aliphatic compound or a cyclic aliphatic compound containing at least two isocyanate groups. Or derived from an aromatic-substituted aliphatic compound. Specifically, for example, it may be a bifunctional isocyanate (for example, a mixture of 1,3-phenylene diisocyanate and 1,4-phenylene diisocyanate, 2,4- and 2,6-toluene) Diisocyanate, 1,3- and 1,4-xylene diisocyanate, bis(4-isocyanatophenyl)methane, bis(4-isocyanatoethylcyclohexyl)methane, isophorone Diisocyanate, hexyl diisocyanate, trimethylhexyl diisocyanate, etc.), the bifunctional isocyanate, polyfunctional alcohol with trimethylolpropane, pentaerythritol, glycerin, etc., addition of alkylene oxide of the polyfunctional alcohol And an adduct of the above-mentioned bifunctional isocyanate; a cyclic trimer of exohexyl diisocyanate, exohexyl-1,6-diisocyanate and derivatives thereof, and the like. Further, in order to achieve the purpose of improving the preservability of the photosensitive film of the present invention, a compound obtained by reacting the isocyanate group of the above polyisocyanate and its derivative with a block agent may be used. The above-mentioned isocyanato blocker may, for example, be an alcohol (for example, isopropanol, tert-butanol, etc.), an intrinsic amine (for example, ε-caprolactam, etc.), Terpenoids (for example, hydrazine, formazan, p-tert-butyl hydrazine, p-sec-butyl hydrazine, p-sec-aminophenol, p-octyl phenol, p-nonyl phenol, etc.), heterocyclic ring a hydroxy compound (for example, 3-hydroxypyridine, 8-hydroxyquinoline, etc.), an active methylene compound (for example, -64-200809406 dialkyl malonate, methyl ethyl ketone oxime, acetamidine acetone, alkyl group) Acetyl acetate oxime, acetone oxime, cyclohexanone oxime, etc.). In addition, a compound having at least one polymerizable double bond and at least one block isocyanate group in the molecule described in JP-A-6-209506 can be used. Wait. Further, a melamine derivative can be used as the aforementioned thermal crosslinking agent. The melamine derivative may, for example, be methylol melamine or alkylated methylol melamine (a compound which etherifies a hydroxymethyl group such as a methyl group, an ethyl group or a butyl group). These may be used alone or in combination of two or more. Among these, from the viewpoint of good storage stability, effective improvement of the surface hardness of the photosensitive layer or film strength of the cured film itself, it is preferred to use alkylated methylol melamine, particularly preferably hexamethylated. Hydroxymethyl melamine. In the solid content of the photosensitive composition, the solid content of the thermal crosslinking agent is preferably from 1 to 50% by mass, more preferably from 3 to 30% by mass. When the solid content is less than 1 mass 7 . When the film strength of the cured film is not confirmed to be increased, when it exceeds 50% by mass, the developability is lowered and the exposure sensitivity is lowered. Further, from the viewpoint of reactivity, the above-mentioned thermal crosslinking agent is preferably an epoxy compound. <(E) Elastomer> The above-mentioned elastomer is not particularly limited and may be appropriately selected according to the purpose, and for example, it may be used in (0061) to [0073] of International Publication No. 04/34147. The compounds described, etc. -65 - 200809406 < (F) phenoxy resin> The phenoxy resin described above is not particularly limited and may be appropriately selected according to the purpose, and for example, it may be used in [0074] to [0078] of the International Publication No. 04/34147. The compound described above and the like. < (G) Sensitizer> The above-mentioned sensitizer is particularly excellent in terms of improving the minimum energy (sensitivity) of the above-mentioned light which does not change the thickness of the exposed portion of the photosensitive layer after the exposure and development. When the photosensitive layer is exposed and developed, the sensitizer may be appropriately selected in accordance with the above-described light irradiation means (for example, visible light, ultraviolet light, visible light laser, or the like). The sensitizer described above can be excited by an active energy ray, and interacts with other substances (for example, a radical generator, an acid generator, etc.) (for example, energy movement, electron movement, etc.). A useful group that generates a radical or an acid or the like. The aforementioned sensitizer includes a condensed ring compound, an aminophenyl ketone compound, a polynuclear aromatic compound, an acid core, a base having a core, and a fluorescent whitening agent core. At least one selected one may contain other sensitizers as the case requires. The sensitizer is more preferably a heterocyclic ring compound or an aminobenzophenone compound, and particularly preferably a heterocyclic ring compound, from the viewpoint of enhancing sensitivity. Monocyclic ring-forming compound 1 Among the compounds exemplified above, the aromatic ring and the heterocyclic ring compound (condensed ring compound) are preferably a heterocyclic ring compound. The aforementioned -66-200809406 heterocyclic ring compound means a polycyclic compound having a hetero element in the ring; it is preferred to contain a nitrogen atom in the aforementioned ring. The aforementioned heterocyclic ring compound may, for example, be a heterocyclic ketone compound. Among the above heterocyclic ketone compounds, 'are more preferably an acridone compound and a thioxanthone compound; and among them, a thioxanthone compound is particularly preferred. Specific examples of the aforementioned heterocyclic ketone compound 'for example, it may be acridone, chloroacridone, N-methylacridone, N-butylacridone, N-butyl- An acridone compound such as chloroacridone; thioxanthone, isopropyl thioxanthone, 2,4-diethylthioxanthone, 1-chloro-4-propoxythioxanthone, thioacetate, etc. Tons of ketone compounds; 3-(2-benzofurancarbenyl)-7-diethylamino coumarin, 3-(2-benzofuranylmethyl)-7-(1-pyrrolidinyl) Coumarin, 3-benzylidinyl-7-diethylamine coumarin, 3-(2-methoxybenzimidyl)-7-diethylamino coumarin, 3-( 4-dimethylaminobenzimidyl)-7-diethylamino coumarin, 3,3'-carbonylbis(5,7-di-n-propoxycoumarin), 3, 3'-Carbonyl bis(7-diethylaminocoumarin), 3-benzylidene-7-methoxycoumarin, 3-(2-furylmercapto)-7-diethyl Amino coumarin, 3-(4-diethylaminocinnamoyl)-7-diethylamino coumarin, 7-methoxy-3-(3 pyrrolidinylcarbonyl) coumarin, 3-benzylidenyl-5,7-dipropoxycoumarin, 7-benzotriazole-2 - coumarin, 7-diethylamino-4-methylcoumarin, and also in Japanese Patent Laid-Open No. 5-19475, JP-A-7-271028, JP-A-2002-363206, JP-A-2002-363207 Coumarins such as coumarin compounds described in JP-A-2002-363208, and JP-A-2002-363209. Further, for example, it may be a well-known polynuclear aromatic compound (-67-200809406, for example, ruthenium, osmium, tri-o-phenylene), xanthene (for example, luciferin, eosin, erythromycin). , Rhodamine B, Bengal Rose Red), Cyanine (for example, quinoxaline carbocyanine, thioquinoline carbocyanine, quinoxaline carbocyanine), merocyanine (for example, merocyanine) , carbonyl merocyanine), thiophene (for example, Lloyd's violet, methylene blue, toluidine blue), steroids (for example, 蒽醌), square key (for example, square key), and the like. The content of the sensitizer is preferably 〇 〇 1 to 4 by mass based on the total composition of the photosensitive composition for the photosensitive film. /. More preferably, it is 〇. 02~2% by mass, especially good for 〇. 〇 5~1% by mass. When the content is less than 〇.〇1% by mass, the sensitivity decreases; when it exceeds 4% by mass, the pattern shape deteriorates. The mass ratio of the sensitizer and the photopolymerization initiator in the photosensitive composition is preferably [(sensitizer) / (photopolymerization initiator)] = 1 / 〇 · 1 〜 1 / 1 00, more preferably 1 / 1 ~ 1 / 50. When the mass ratio of the content of the sensitizer and the content of the photopolymerization initiator is outside the above range, the sensitivity may be lowered, and the change with time of the sensitivity may be deteriorated. The combination of the aforementioned sensitizer and the aforementioned photopolymerization initiator is particularly preferably a combination of a thioxanthone compound and an anthracene derivative from the viewpoint of high sensitivity. Further, the above-mentioned anthracene derivative may be a photopolymerization initiator compound which contains a small amount of an aminoalkyl group and an aminophenyl group in combination with other neutral radical generators and a partial structure. <(Η) Other components> The other components mentioned above, for example, may be a thermal polymerization inhibiting agent-68-200809406 agent, a plasticizer, a coloring agent (coloring pigment or dye), an anthraquinone pigment, etc.; It can also be used as an adhesion promoter and other auxiliary agents on the surface of the substrate (for example, conductive particles, a charging agent, an antifoaming agent, a flame retardant, a leveling agent, a peeling accelerator, a fragrance, and a surface tension adjuster). , chain mover, etc.). By appropriately containing these components, the properties of the photosensitive film such as stability, film quality, and film properties can be adjusted. A thermal polymerization inhibiting agent - The above thermal polymerization inhibiting agent may be added for the purpose of preventing thermal polymerization or polymerization over time of the above polymerizable compound. The aforementioned thermal polymerization inhibitor may, for example, be 4-methoxyphenol, hydroquinone, alkyl or aryl substituted hydroquinone, t-butylcatechol, benzenetriol, 2- Hydroxybenzophenone, 4-methoxy-2-hydroxybenzophenone, cuprous chloride, benzothiazepine, chloranil, naphthylamine, β-naphthol, 2,6-dibutyl-4 -cresol, 2,2'-methylenebis(4-methyl-6-t-butylphenol), pyridine, nitrobenzene, dinitrobenzene, picric acid, 4-toluidine, methylene blue, copper A reaction product with an organic chelating agent, methyl urate and a benzothiazide, a nitroso compound, a chelating compound of a nitroso compound and AI, and the like. The content of the above-mentioned thermal polymerization inhibitor is preferably from 1 to 5 mass%, more preferably from 0.005 to 2 mass, based on the polymerizable compound. /°' is particularly preferably 0.0 1 to 1% by mass 〇 When the aforementioned content is less than 0·0 01 mass. /. At the time of 'there is a case where the stability of the storage is lowered, and when it exceeds 5% by mass, the sensitivity to the active energy ray is lowered. A plasticizer-69-200809406 The aforementioned plasticizer' may be added for the purpose of controlling the film properties (flexibility) of the aforementioned photosensitive layer. The aforementioned plasticizer, for example, may be, for example, dimethyl phthalate, dibutyl phthalate, diisobutyl phthalate, diheptyl phthalate, dioctyl phthalate, Cyclohexyl phthalate, decyl decanoate, butyl benzyl phthalate, diisodecyl phthalate, diphenyl phthalate, diallyl decanoate, octyl decyl Phthalate esters such as phthalic acid esters, triethylene glycol diacetate, tetraethylene glycol diacetate 'dimethyl gluconate decanoate, ethyl decyl butyl glycolate, ethyl decyl Glycol esters such as ethyl glycolate, methyl decyl ethyl glycolate, butyl decyl butyl glycolate, triethylene glycol dicaprylate; tricresyl phosphate, triphenyl phosphate Phosphate esters such as 4-toluenesulfonamide, benzenesulfonamide, N-n-butylbenzenesulfonamide, Nn-butylacetamide, etc.; diisobutyl adipate, adipic acid Aliphatic dibasic acid esters of dioctyl ester, dimethyl sebacate, dibutyl sebacate, dioctyl sebacate, dioctyl sebacate, dibutyl maleate, etc.; lemon Triethyl citrate, tributyl citrate, C Three acetyl alcohol ester, butyl laurate, 4,5-epoxy-cyclohexane-1,2-dicarboxylic acid dioctyl ester, polyethylene glycol, polypropylene glycol, etc. glycols. The content of the aforementioned plasticizer is preferably from 1 to 50 by mass based on the total composition of the photosensitive layer. /〇, more preferably 0.5 to 40% by mass, particularly preferably 1 to 30% by mass. - Coloring Pigment - The coloring pigment is not particularly limited and may be appropriately selected depending on the purpose; for example, it may be, for example, Victoria Pure Blue (C_丨_ 4259 5) or gold amine (CI 41000). , Fat Black HB (C·I. 2615 0), -70- 200809406 Single Pigment Yellow GT (C. I·Pig Yellow 12), Permanent Yellow GR (C. I·Pig Yellow 17), Permanent Yellow HR ( CI Pigment Yellow 83), Permanent Magenta FBB (C. I·Pigment Red 146), Horst Plaque Red ESB (CI Pigment Violet 19), Permanent Gem Red FBH (CI Pigment Red 11), Fixation Super Pink B (C·I·Pigment Red 81), Single Star Fast Blue (CI Pigment Blue 15), Single Pigment Fast Black (Β-ΐ·Pigment Black 1), Carbon Black, C_I·Pigment Red 97, C·I·Pigment Red 122, CI Pigment Red 149, CI Pigment Red 168, CI Pigment Red 177, CI Pigment Red 180, CI Pigment Red 192, CI Pigment Red 215, CI Pigment Green 7, CI Pigment Green 36, CI Pigment Blue 15:1, C·I·Pigment Blue 15:4, C·丨·Pigment Blue 15:6, C.丨·Pigment Blue 22, C·I·Pigment Blue 60, and C·I. Pigment Blue Pigment Blue 64. These may be used alone or in combination of two or more. Further, as appropriate, a dye suitably selected from known dyes can be used. The solid content of the coloring pigment in the solid content of the photosensitive composition can be determined in consideration of the exposure sensitivity and the resolution of the photosensitive layer at the time of permanent pattern formation, although it may vary depending on the type of the color pigment. Different, however, generally more preferably 〇.〇1~1〇% by mass, more preferably 〇·〇5~5% by mass. An enamel pigment may be added to the photosensitive composition as described above to increase the surface hardness of the permanent pattern, or to suppress a decrease in the coefficient of linear expansion, or to suppress the decrease in the dielectric constant and dielectric tangent of the cured film itself. Inorganic pigments and organic particles for the purpose. The above-mentioned inorganic pigment is not particularly limited and may be selected locally from the known material, for example, kaolin, barium sulfate, barium titanate, cerium oxide powder, fine powdered cerium oxide, Gas phase magnesia, amorphous vermiculite, crystalline vermiculite, molten vermiculite, globular vermiculite, talc, clay, magnesium carbonate, calcium carbonate, alumina, aluminum hydroxide, mica, and the like. The above inorganic pigment preferably has an average particle diameter of less than 1 〇 micrometer, more preferably 3 micrometers or less. When the average particle diameter is 10 μm or more, the resolution may be deteriorated due to light scattering. The above-mentioned organic fine particles are not particularly limited and may be appropriately selected according to the purpose, and may be, for example, a melamine resin, a benzoguanamine resin, a crosslinked polystyrene resin or the like. Further, spherical porous fine particles formed of vermiculite having an average particle diameter of 0.01 to 5 μm and an oil absorption of about 100 to 200 m 2 /g or a crosslinked resin can be used. The amount of the above-mentioned stilbene pigment added is preferably from 1 to 60% by mass. When the amount added is less than 1% by mass, there is a case where the coefficient of linear expansion cannot be sufficiently lowered; and when it exceeds 60% by mass, in the case where a cured film is formed on the surface of the photosensitive layer, the film of the cured film is It becomes brittle; in the case where wiring is formed using a permanent pattern, there is a function of impairing the protective film as a wiring. One adhesion promoter 1 A known so-called adhesion promoter can be used for each layer in order to improve the adhesion between the layers or the adhesion between the photosensitive layer and the substrate. For example, the adhesion promoter described in the above-mentioned Japanese Patent Application Laid-Open No. Hei No. Hei 5- No. Hei. Specific examples, for example, may be benzimidazole, benzoxazole, benzothiazole, 2-mercapto-72-200809406 benzimidazole, 2-mercaptobenzoxazole, 2_fluorenyl Benzothiazole, 3-morpholinylmethyl-1-phenyl-triazol-2-one, 3-morpholinylmethyl-5-phenyl-oxadiazol-2-one, 5-amino- 3- morpholinylmethyl-thiadiazole-2-one, 2-mercapto-5-methylthio-thiadiazole, triazole, tetrazole, benzotriazole, carboxybenzotriazole, amine Benzotriazole, and decane coupling agent. The content of the adhesion promoter described above is preferably 0.001 to 2 Å by mass based on the total composition of the photosensitive layer. /〇, more preferably 〇_〇1~10% by mass, particularly preferably 0.1 to 5% by mass. (Photosensitive film) The photosensitive film of the present invention preferably has at least a support and a photosensitive layer formed of the photosensitive composition of the present invention formed on the support, and is preferably appropriately provided as occasion demands It is formed by other layers such as a thermoplastic resin layer. <Photosensitive layer> The photosensitive layer described above is formed using the photosensitive composition of the present invention. In the photosensitive film described above, the position at which the photosensitive layer is disposed is not particularly limited, and may be appropriately selected according to the purpose. However, it is usually laminated on the above-mentioned support. The sensitivity of the photosensitive layer, as described above, is 〇1 to 200 mJ/cm2, more preferably 0.2 to 100 mJ/cm2, and particularly preferably 〇5 to 50 mJ/cm2. The thickness of the photosensitive layer, as described above, is preferably from 1 to 10 μm, more preferably from 2 to 50 μm, particularly preferably from 4 to 30 μm. -73- 200809406 <Support and Protective Film> The above-mentioned support is not particularly limited, and may be appropriately selected depending on the purpose. However, it is preferable that the above-mentioned photosensitive layer can be peeled off and the light transmittance is good; A material with good surface smoothness. The support and the protective film are specifically described in, for example, [0342] to [0348] of JP-A-2005-25843. <Other Layers> The other layers in the photosensitive film are not particularly limited, and may be appropriately selected according to the purpose, and may, for example, have a buffer layer, an oxygen barrier layer (pc layer), and a peeling layer. a layer of a layer, an adhesive layer, a light absorbing layer, a surface protective layer, or the like. One of these layers may be provided alone or in combination of two or more. Further, a protective film may be provided on the photosensitive layer described above. A buffer layer The above-mentioned buffer layer is not particularly limited and may be appropriately selected according to the purpose; it may be swellable or soluble in an alkaline liquid, or may be insoluble. In the case where the aforementioned buffer layer is swellable or soluble to the alkaline liquid, the aforementioned thermoplastic resin may, for example, be a saponified product of ethylene and an acrylate copolymer, ethylene and (meth) acrylate. Saponification of copolymer, saponification of vinyl toluene and (meth) acrylate copolymer, poly(meth) acrylate, butyl (meth) acrylate and vinyl acetate copolymerization of (meth) acrylate a saponified product such as a saponified product, a copolymer of (meth) acrylate and (meth) acrylate, a copolymer of styrene and (meth) acrylate and (meth) acrylic acid, and the like. -74- 200809406 The softening point (Vicat) of the thermoplastic resin in this case is not particularly limited, and may be appropriately selected according to the purpose of the object; for example, it is preferably 80 ° C or lower. The above-mentioned thermoplastic resin having a softening point of 80 ° C or less, for example, in addition to the above-mentioned thermoplastic resin, may be a "plastic property note" (edited by the Japan Plastics Industry Federation, the All Japan Plastic Forming Industry Federation, industrial The softening point of the investigation will be issued on October 25, 1968, which is soluble in alkaline liquids in organic polymers below about 80 °C. Further, even in the organic polymer material having a softening point of 80 ° C or higher, various plasticizers having compatibility with the organic polymer material can be added to the organic polymer material. The softening point is substantially reduced below 80 °C. Further, when the buffer layer is swellable or soluble to the alkaline liquid, the interlayer bonding strength of the photosensitive film is not particularly limited, and may be appropriately selected according to the purpose; for example, it is preferably Among the interlayer bonding forces of the respective layers, the interlayer bonding force between the support and the buffer layer is minimized. By causing the interlayer bonding force to be such that only the support is peeled off from the photosensitive film, the photosensitive layer is exposed through the buffer layer, and then the photosensitive layer is exposed using an alkaline developing solution. Visualization. Further, after the remaining support is exposed to the photosensitive layer as it is, the support may be peeled off from the photosensitive film, and the photosensitive layer may be formed using an alkaline developing solution. Give it a picture. The method for adjusting the interlaminar bonding force is not particularly limited, and it can be changed from -75 to 200809406, and the quality is as good as the material, but the cold is said to be '' The various types of the selected agents are added, and the medium is required to be viscous, and the plasticizer is not particularly limited, and may be used according to the purpose. Suitably selected; for example, it may be polypropylene glycol, polyethylene glycol, dioctyl phthalate, diheptyl phthalate, dibutyl phthalate, tricresyl phosphate, cresyl diphenyl phosphate An alcohol or an ether such as an ester or a biphenyldiphenyl phosphate; an amide such as toluenesulfonamide or the like. In the case where the buffer layer is insoluble to the alkaline liquid, the thermoplastic resin is, for example, a copolymer in which the main component is ethylene as a necessary copolymerization component. The copolymer having ethylene as an essential copolymerization component is not particularly limited and may be appropriately selected according to the purpose; for example, it may be ethylene-vinyl acetate copolymer (EVA), ethylene- Ethyl acrylate copolymer (EEA) and the like. In the case where the buffer layer is insoluble to the alkaline liquid, the interlayer bonding strength of the photosensitive film is not particularly limited, and may be appropriately selected according to the purpose; for example, it is preferably a bonding force between layers of each layer. In the middle, the interlayer bonding force between the support body and the buffer layer is minimized. By bringing the interlayer bonding force into this manner, the support and the buffer layer can be peeled off from the photosensitive film, and the photosensitive layer can be exposed, and then the photosensitive layer can be developed using an alkaline developing solution. Further, after the exposed support layer is exposed to the photosensitive layer as it is, the support and the buffer layer may be peeled off from the photosensitive film - 76 - 200809406, and alkaline is used. The developing layer develops the photosensitive layer. The method for adjusting the interlaminar bonding force is not particularly limited, and may be appropriately selected according to the purpose. For example, a known polymer, a supercooling substance, a adhesion improving agent, or the like may be added to the thermoplastic resin. A method of a surfactant, a release agent or the like; for example, it may be, for example, a method of adjusting an ethylene copolymerization ratio described below or the like. The ethylene copolymerization ratio in the copolymer of ethylene as an essential copolymerization component is not particularly limited and may be appropriately selected according to the purpose; for example, it is preferably 60 to 90% by mass, more preferably 60 to 60%. 80% by mass, particularly preferably 6 5 to 80% by mass. When the copolymerization ratio of ethylene described above becomes less than 60% by mass, the interlayer bonding force between the buffer layer and the photosensitive layer becomes high, and peeling at the interface between the buffer layer and the photosensitive layer becomes Difficult; and when it exceeds 90% by mass, since the interlayer bonding force between the buffer layer and the photosensitive layer is small, the buffer layer and the photosensitive layer are easily peeled off so that the photosensitive layer containing the buffer layer is photosensitive. The manufacture of thin films becomes difficult. The thickness of the aforementioned buffer layer is not particularly limited and may be appropriately selected according to the purpose; for example, it is preferably 5 to 50 μm, more preferably 10 to 50 μm, and particularly preferably 15 to 40 μm. When the aforementioned thickness becomes less than 5 μm, the unevenness of the unevenness and the bubbles in the surface of the substrate is lowered, so that a high-definition permanent pattern cannot be formed; and when it exceeds 50 μm, there is It is not suitable for the production to increase the drying load and the like. -77 - 200809406 An oxygen barrier layer (PC layer) ~ - The oxygen barrier layer is preferably formed by using a general polyvinyl alcohol as a main component to form a film having a thickness of about 0.5 to 5 μm. [Method for Producing Photosensitive Film] The above-mentioned photosensitive film can be produced, for example, by the following method. First, the material contained in the photosensitive composition is dissolved, emulsified or dispersed in water or a solvent to prepare a photosensitive resin composition solution. The solvent is not particularly limited and may be appropriately selected according to the purpose of the object; for example, it may be methanol, ethanol, η-propanol, isopropanol, η-butanol, sec-butanol, η Alcohols such as hexanol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone; ethyl acetate, butyl acetate, and η-amyl acetate , esters of methyl sulfate, ethyl propionate, dimethyl decanoate, ethyl benzoate and methoxypropyl acetate; aromatic hydrocarbons such as toluene, xylene, benzene, ethylbenzene; Halogenated hydrocarbons such as carbon tetrachloride, trichloroethylene, chloroform, trichloroethane, dichloromethane, monochlorobenzene, etc.; tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 1 An ether such as methoxy-2-propanol; dimethylformamide, dimethylacetamide, dimethyl hydrazine, cyclobutyl hydrazine or the like. These may be used alone or in combination of two or more. Further, a known surfactant may be added. Then, a photosensitive film can be produced by applying the above-mentioned photosensitive resin composition solution onto the above-mentioned support and drying it to form a photosensitive layer. The coating method of the photosensitive composition solution is not particularly limited -78 - 200809406, and may be appropriately selected according to the purpose, and for example, it may be a spray method, a roll coating method, a rotary coating method, or a slit coating method. Various coating methods such as a method, an extrusion coating method, a curtain coating method, a die coating method, a gravure coating method, a bar coating method, and a knife coating method. Although the drying conditions vary depending on the components, the type of the solvent, the ratio of use, and the like, it is usually carried out at a temperature of 60 to 110 ° C for about 30 seconds to 15 minutes. The photosensitive film described above is, for example, a core wound in a cylindrical shape, and is preferably stored in a roll shape having a roll-shaped shape. The length of the long-length photosensitive film described above is not particularly limited, and for example, it can be appropriately selected from the range of 10 to 20,000 m. Further, in order to make it easy for the user to use, it is also possible to perform a slit process to form a long-length body having a roll shape of 100 to 1,000 meters. Further, in this case, it is preferable to wind the aforementioned support body to the outermost side. Further, the above-mentioned roll-shaped photosensitive film may be subdivided into a sheet shape. When storing, from the viewpoint of end face protection and prevention of end face melting, it is preferable to provide a separator (especially a moisture-proof substance and a desiccant) on the end surface, and it is also preferable to use the bag and the bag. Low wet material. (Photosensitive laminated body) The photosensitive laminated system of the present invention has at least a photosensitive layer formed of the photosensitive composition of the present invention on the substrate, and other layers which are appropriately selected as needed. <Substrate> The above-mentioned substrate is not particularly limited as long as it is a substrate to be processed to form a photosensitive layer or a transferable body of at least a photosensitive layer of the photosensitive film described in the above-mentioned publication No. 79-200809406. It can be suitably selected according to the purpose, for example, it can be arbitrarily selected from the surface smoothness to the surface having the uneven surface. It is preferably a plate-like substrate, that is, a so-called substrate is used. Specifically, for example, it may be a known printed wiring manufacturing substrate (printing substrate), a glass plate (such as an alkali glass plate), a synthetic resin resin film, paper, a metal plate, or the like. [Manufacturing Method of Photosensitive Laminate] The method for producing the photosensitive laminate described above is, for example, a method of applying the photosensitive composition onto the surface of a substrate and drying the first aspect, and In the second aspect, at least one of heating and pressurization of the photosensitive layer in the photosensitive film of the present invention is carried out by transferring the photosensitive layer. In the method for producing a photosensitive laminate according to the first aspect described above, the photosensitive composition is applied and dried on the substrate, and dried to form a photosensitive layer. The method of coating and drying described above is not particularly limited, and may be appropriately selected depending on the purpose; for example, the photosensitive composition may be dissolved, emulsified or dispersed in water or a solvent to prepare a photosensitive film. The composition solution is applied directly to the surface of the above-mentioned substrate, and dried and laminated. The solvent of the photosensitive composition solution is not particularly limited and may be appropriately selected according to the purpose. For example, a solvent similar to that used in the photosensitive film may be used. These may be used alone or in combination of two or more. Further, a surfactant known in the form of -80-200809406 may be added. The coating method and drying conditions described above are not particularly limited, and may be appropriately selected depending on the purpose. For example, it can be carried out, for example, by using the same methods and conditions as those of the above-mentioned photosensitive film. In the method for producing a photosensitive laminate of the second aspect described above, it is preferred that at least one of heating and pressurization is carried out, and the photosensitive film of the present invention is laminated on the surface of the substrate. Further, in the case where the photosensitive film described above has the protective film, it is preferred to peel off the protective film and laminate the above-mentioned photosensitive layer on the above-mentioned substrate in a superposed manner. The heating temperature is not particularly limited and may be appropriately selected according to the purpose, however, for example, it is preferably 15 to 180 ° C, more preferably 60 to 140 ° C. The pressure of the above-mentioned pressurization is not particularly The definition can be appropriately selected according to the purpose of the object, however, for example, it is preferably 0.1 to 1.0 MPa, more preferably 0 to 0.8 MPa. The apparatus for performing at least any of the above-described heating is not particularly limited, and may be appropriately selected according to the needs of the object. However, for example, a suitable laminator (for example, VP-丨丨 manufactured by Dacheng Laminator Co., Ltd., Nike Qimeng Co., Ltd. VP130) and so on. Since the photosensitive film of the present invention and the above-mentioned photosensitive layered product are formed by using the photosensitive composition of the present invention, it is possible to form a permanent pattern having excellent sensitivity and excellent storage stability with high precision, and thus it is suitable. Liquid crystal for use in various pattern formation, color filters, pillars, ribs, spacers, partition walls, etc., such as a protective film, an interlayer insulating film, and a permanent pattern such as a solder resist pattern. -81 - 200809406 Manufacture of structural components For permanent pattern forming applications such as holography, micromachining, and verification, in particular, it can be suitably used for permanent pattern forming applications of printed substrates. In particular, in the photosensitive film of the present invention, since the thickness of the film is uniform, even when a permanent pattern is formed, even a permanent pattern (a protective film, an interlayer insulating film, a solder resist pattern, etc.) is thinned. In the high acceleration test (HAST), a high-definition permanent pattern excellent in ion migration, heat resistance, and moisture resistance can be obtained, so that the deposition on the substrate can be performed more finely. (Pattern Forming Apparatus and Permanent Pattern Forming Method) The pattern forming apparatus of the present invention includes the above-described photosensitive layer, and has at least a light irradiation mechanism and a light modulation mechanism. The permanent pattern forming method of the present invention includes at least an exposure step and includes other steps of a developing step, a hardening step, and the like. Further, the above-described pattern forming apparatus of the present invention will be apparent from the description of the above-described pattern forming method of the present invention. <Exposure Step> The above-described exposure step is a step of exposing the photosensitive layer in the photosensitive film of the present invention. The materials of the photosensitive film and the substrate of the present invention described above are as described above. The object to be exposed is preferably a photosensitive layer in the photosensitive film. Although it is not particularly limited, it may be appropriately selected according to the purpose. However, for example, as described above, it is preferably It is carried out by laminating a layer formed on the substrate by one of -82 to 200809406 by heating and pressurizing the photosensitive film. The above-mentioned exposure is not particularly limited and may be appropriately selected depending on the purpose, however, for example, it is preferably a digital exposure, an analog exposure, or the like; among these, digital exposure is preferred. The aforementioned analog exposure is not particularly limited, and may be appropriately selected according to the needs of the object. For example, for example, it may be exposed through a negative mask having a predetermined pattern, using a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a xenon lamp, or the like. The method. The aforementioned digital exposure is not particularly limited and may be appropriately selected according to the needs of the object, for example, using light generated based on the formed pattern forming information and modulated with the control signal; for example, It is preferable to use an exposure head for the photosensitive layer described above, which is provided with a light irradiation means and a quaternary element having η (however, η is a natural number of 2 or more) that receives light from the light irradiation means and emits it. The aligned pixel portion, the exposure head capable of controlling the light modulation mechanism of the pixel portion in response to the pattern information, and configured to cause the column direction of the pixel portion to form a predetermined direction with the scanning direction of the exposure head The tilt angle β is set. For the above-described exposure head, by using the pixel portion specifying means, the aforementioned use of the above-mentioned pixel portion is used for the first exposure (however, the natural number of 2 or more) In the above-mentioned exposure head, by the pixel control mechanism, the aforementioned pixel portion specified by the above-mentioned use of the pixel designation mechanism is involved The way to control the picture element portion; and so that the exposure head is moved with respect to the method for exposing the photosensitive layer with respect to the scanning direction. In the present invention, "Ν exposure" means a line parallel to the scanning direction of the exposure head in approximately the entire area of the -83 - 200809406 surface exposed on the photosensitive layer, and the surface to be exposed on the exposed surface The N spot columns (pixel columns) are set to be crossed and exposed. In the present disclosure, the "spot array" is a direction which is smaller than the angle of the scanning direction of the exposure head among the pixel (pixel) columns of the pixel unit generated by the pixel portion. The list. Further, the arrangement of the aforementioned pixel portions does not have to be a rectangular lattice shape, and for example, it may be a configuration of a parallelogram shape or the like. The "about all regions" described herein, in terms of the both side edges of the respective pixel portions, reduce the use of pixels that intersect the scanning direction parallel to the exposure head by tilting the pixel portion. The number of pixels in the part, so in this case, even if a plurality of exposure heads are connected for use, a straight line parallel to the scanning direction is caused by an error in the mounting angle and arrangement of the exposure head. In the case of using the number of pixels in the pixel portion, the number of pixels in the pixel portion is slightly increased or decreased, and the resolution of each of the pixel portions in the pixel portion is divided into a minimum of the following, due to the mounting angle and the arrangement of the pixel portion. The error is such that the pitch of the pixel portion along the direction perpendicular to the scanning direction cannot be strictly coincident with the pitch of the pixel portion of the other portion, and thus the pixel portion intersecting with the straight line parallel to the scanning direction is used. The number of pixels in the figure is increased or decreased within the range of ± 1. Further, in the following description, the N-time exposure in which the natural number of N is 2 or more is referred to as "multiple exposure". Furthermore, in the following description, the exposure apparatus and the exposure method of the present invention are implemented as a drawing apparatus and a drawing method, and the terms "N times drawing" and "multiple drawing" are used. It is a term corresponding to "N exposure" and "multiple exposure". -84- 200809406 The N of the N-th exposure described above is not particularly limited as long as it is a natural number of 2 or more, and may be appropriately selected according to the purpose. However, it is preferably a natural number of 3 or more, and more preferably 3 or more natural numbers below 7. As an example of the pattern forming apparatus of the permanent pattern forming method of the present invention, for example, [0028] to [0139] and [0185] to [0191] in JP-A-2006- 284842 can be used. The means of recording, etc. <Exposure Step> The above-described development is performed by removing the unexposed portion of the photosensitive layer described above. The method for removing the uncured region is not particularly limited, and may be appropriately selected according to the purpose, for example, a method in which it can be removed using a developing solution. The developing solution is not particularly limited, and may be appropriately selected according to the purpose. However, for example, it may be an alkaline liquid, a water-based developing liquid, an organic solvent, or the like; among them, It is preferably a weakly alkaline aqueous solution. The alkali component of the weakly alkaline liquid may be, for example, lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogencarbonate, sodium hydrogencarbonate or potassium hydrogencarbonate. Sodium phosphate, potassium phosphate, sodium pyrophosphate, potassium pyrophosphate, borax, and the like. The p Η値 of the aforementioned weakly basic aqueous solution is, for example, preferably about 8 to 12, more preferably about 9 to 11. The aforementioned weakly alkaline aqueous solution may be, for example, 0.1 to 5 mass, for example. / 〇 sodium carbonate aqueous solution or potassium carbonate aqueous solution. -85-200809406 The temperature of the above-mentioned developing liquid can be appropriately selected in view of the development of the photosensitive layer. However, for example, it is preferably about 25 ° C to 4 0 X:. The above-mentioned developing solution may also use a surfactant, an antifoaming agent, or an organic base (for example, ethylenediamine, ethanolamine, tetramethylammonium hydroxide, diamethylenetriamine, triethyleneamine, morpholine, triethanolamine, etc.). Or an organic solvent (for example, an alcohol, a ketone, an ester, an ether, a guanamine, a lactone, etc.) for promoting development. Further, the developing solution may be a water-based developing solution obtained by mixing water or an aqueous alkali solution with an organic solvent, or may be a single organic solvent. In the formation of the aforementioned pattern, for example, a hardening treatment step, an etching step, a plating step, or the like may be contained. These may be used alone or in combination of two or more. <Hardening treatment step> In the case where the pattern forming method described above is a permanent pattern forming method of forming a permanent pattern of a protective film, an interlayer insulating film, a solder resist pattern, or the like, and a color furnace sheet, the aforementioned hardening treatment step It is preferred to have a step of hardening the photosensitive layer in the formed pattern after performing the above-described developing step. The hardening treatment described above is not particularly limited and may be appropriately selected according to the purpose of the object. For example, a suitable exposure treatment, a full-surface heat treatment, or the like is suitable. The above-described overall exposure treatment method is, for example, a method of exposing the entire surface of the laminate in which the permanent pattern is formed after the development step. By this full exposure, the hardening of the resin in the photosensitive composition forming the above-mentioned photosensitive layer can be promoted, and the surface of the above-mentioned permanent drawing -86-200809406 can be hardened. The apparatus for performing the above-described overall exposure is not particularly limited, and may be appropriately selected according to the purpose, and for example, a UV exposure machine such as an ultrahigh pressure mercury lamp, an exposure machine using a xenon lamp, a laser exposure machine, or the like is suitable. The exposure is usually 10 to 2,000 mJ/cm2. The above-described overall heating treatment method may be, for example, a method of performing overall heating on the above-mentioned laminated body in which the aforementioned permanent pattern is formed. By this overall heating, the film strength of the surface of the aforementioned permanent pattern can be improved. The heating temperature for the above comprehensive heating is preferably 120 to 250 ° C, more preferably 1 2 0 to 2 0 ° C. When the heating temperature is less than 120 ° C, the effect of increasing the film strength by heat treatment is not obtained; and when it exceeds 250 ° C, the resin in the photosensitive composition is decomposed. And make the membrane weak and brittle. The heating time of the above overall heating is preferably from 10 to 120 minutes, more preferably from 1 5 to 60 minutes. The apparatus for performing the above overall heating is not particularly limited. For example, it may be appropriately selected from conventional devices according to the purpose, such as a drying oven, a hot plate, an I R heater, or the like. The pattern forming method described above can be used to prevent formation of various patterns necessary for the sensitivity of the photosensitive layer due to oxygen when directly drawing with a 405 nm laser exposure, and can be suitably used for high. Pattern formation with both density and high production. In the above-described permanent pattern forming method, when the permanent pattern formed by the above-described permanent pattern forming method is the aforementioned protective film and the above-mentioned interlayer-87-200809406 edge film, the wiring can be protected from external impact. And the bending, in particular, in the case of the above-mentioned interlayer insulating film, for example, it can be effectively used for mounting on a high-density semiconductor or a component such as a multilayer wiring substrate or a stacked wiring substrate. In the above-described permanent pattern forming method of the present invention, since the photosensitive composition of the present invention is used, it can be suitably used for forming various patterns such as a protective film, an interlayer insulating film, and a permanent pattern such as a solder resist pattern. The manufacture of liquid crystal structural components such as color filters, pillars, ribs, spacers, partition walls, etc., manufacturing of holograms, micromachines, verification, etc., can be suitably used for permanent pattern formation of printed substrates. [Examples] Hereinafter, the present invention will be specifically described by way of Examples, but the present invention is not limited thereto. (Example 1) Preparation of a photosensitive composition - Each component was blended in the following amounts to prepare an aqueous photosensitive composition solution. [Amount of each component of the photosensitive composition solution] • KAYARAD ZFR-1492H (bisphenol F type epoxy acrylate, concentration 66%, manufactured by Nippon Chemical Co., Ltd.)....46·8 Parts by mass • Dipentaerythritol hexaacrylate (polymerizable compound) · · · · 9 parts by mass • Irgacure 819 (I -1, photopolymerization initiator).....6 parts by mass • The following structural formula (1) Sensitizer (S-1)·································································· ΥΡ-50 (phenoxy resin, manufactured by Dongdu Chemical Co., Ltd.) · · 4 parts by mass • Thermal hardening accelerator (cyanide)..........0.77 parts by mass • Fluoride-based surfactant (Mega method) Library F-176, manufactured by Dainippon Ink Chemical Industry Co., Ltd., 30% by mass of 2-butanone solution) 0.2 parts by mass • Barium sulfate dispersion (manufactured by Dai Chemical Industry Co., Ltd., Β-30) · · · · 80 parts by weight • Methyl ethyl ketone......... 30 parts by mass In addition, the above barium sulfate dispersion is 28.5 parts by mass of barium sulfate (堺Chemical Industry) (share) company system, Β 30), 15.6 quality KAYARAD ZFR — 1492 Η (bisphenol F epoxy acrylate, 66%, manufactured by Nippon Kayaku Co., Ltd.), 28.2 parts by mass of n-propyl acetate, and 〇 2 parts by mass of cyanine green After pre-mixing, it was prepared by using a motor honing machine 200-200 (manufactured by Aga Co., Ltd.), using a chrome oxide bead having a diameter of 1.0 mm, and dispersing at a peripheral speed of 9 m/sec for 3 hours. The ratio of the crosslinking group of the thermal crosslinking agent in Example 1 to the acidity of the binder: thermal crosslinking group / acidic group = 0.5 / 1.0 = 0.5.
Ο CIΟ CI
構造式(1) 〇C3H7 一感光性積層體之調製一 其次,對於做爲前述基體的配線形成完畢之覆銅積層板 (無貫穿孔、銅厚度爲12微米)的表面實施化學硏磨處理、 調製。於該覆銅積層板上,藉由網版印刷法,使用1 2 0網目 -89 - 200809406 之鐵特龍網篩,依使乾燥後的膜厚度成爲30微米這樣的方 式來塗布前述之感光性組成物,並於80°C下,以熱風循環 式乾燥機進行乾燥15分鐘而形成感光層,調製成依序積層 有前述覆銅積層板、前述感光層的感光性積層體。 對於前述之感光性積層體,分別依照以下之方法,進行 感度、解像度、保存安定性及邊緣粗糙度之評價。最短顯像 時間以外的結果示於表1。 <最短顯像時間之評價> 對於前述之覆銅積層板上的前述感光層之全面,以0.15 M pa之壓力噴灑做爲鹼性顯像液的30°C、1質量%之碳酸鈉 水溶液,並測定自碳酸鈉水溶液之噴灑開始直到溶解除去覆 銅積層板上的感光層爲止所需要的時間,以此當做最短顯像 時間。另外,最短顯像時間爲20秒。 <感度之評價> 對於前述所調製的感光性積層體中的感光層,使用以下 所說明的圖案形成裝置,以21/2倍間隔、照射從0.1 mJ/cm2 起到100 mJ/cm2爲止的不同光能量之光來進行2次曝光,以 使前述感光層的一部分區域硬化。在室溫下靜置1 0分鐘後, 以上述所求得的最短顯像時間之2倍時間,以0.15 MPa之噴 灑壓力,將30 °C、1質量%之碳酸鈉水溶液噴灑在覆銅積層 板上之感光層全面上,以溶解去除未硬化區域,測定所殘留 的硬化區域之厚度。其次,繪製光之照射量與硬化層之厚度 的關係,以得到感度曲線。從如此得到的感度曲線求取硬化 區域之厚度成爲和曝光前的感光層相同的30微米厚度時的 -90- 200809406 光能量,將之當做使感光層硬化時所必需要的曝光能量。 <<圖案形成裝置>> 使用具備曝光頭30之圖案形成裝置10,該曝光頭係具 有做爲前述光照射機構的特開2005-258431號公報上所記 載的複合波雷射光源、和做爲前述光調變機構之可控制成 僅驅動如第2圖之槪略圖所示之在主掃描方向上排列1 024 個微鏡片58之微鏡片列、在副掃描方向上排列768組微鏡 片陣列中之1 024個χ256列的DMD36,以及排列有將光成 像於前述感光性薄膜的如第1A圖及第1B圖所示的光學系 統。 各曝光頭30,即各DM D36之設定傾斜角度,可以使用 可供使用的1 024列χ2 56行之微鏡片58,並採用比恰好2 次曝光的角度0 id eal稍微大一些的角度。此種角度0 idea i 對於N次曝光之次數N,可供使用的微鏡片58之列方向的 個數s、可供使用的微鏡片58之列方向的間隔p、及曝光 頭30呈傾斜狀態時之由於微鏡片所形成的掃描線間距δ而 言,係具有如下述式1之關係: s p sin 0 Ideal ^ Ν δ (式 1 ) 本實施形態中之DM D36,如以上所述,因爲它是一種 縱橫之配置間隔爲相等之多數個微鏡片58呈矩形格子狀排 列之物的緣故,所以: pcos0ideai= 5(式 2) 因而上述式1乃變成: s tan 0 ideal = N (式 3) -91 - 200809406 由於s = 2 5 6、N = 2,所以角度0 j d e a!係約ο . 4 5度。從而 設定傾斜角度0 ’例如,可以採用〇. 5 0度。 首先’爲了補正2次曝光中解像度之變異及曝光不均 一現象,所以調整被曝光面之曝光圖案的狀態。結果如第3 圖所示。在第3圖中,係顯示一在令平台1 4呈靜止之狀態 下投影於感光性薄膜12之被曝光面上,具有曝光頭30 ! 2 和3021之DMD36的可供使用的微鏡片58而來的光點群之 圖案。又,在出現如下半部分、上半部分所示之光點群的圖 案之狀態下,移動平台1 4進行連續曝光之際,對於曝光區 域3212和3221顯示在被曝光面上所形成的曝光圖案的狀態 。另外,在第3圖中,雖然爲了方便說明起見而將可供使用 的微鏡片58之間隔1列的曝光圖案,分開爲畫素列群A之 曝光圖案與畫素列群B之曝光圖案來表示,然而實際的被曝 光面上之圖案係由此等2種曝光圖案重合而成者。 如第3圖所示,可明白:由於曝光頭3012和3021間之 相對位置偏離理想狀態的結果,所以畫素列群A之曝光圖案 與畫素列群B之曝光圖案雙方,在曝光區域3212和3221之 前述曝光頭的掃描方向成垂直的座標軸上之重複曝光範圍 之中,皆產生比理想的2次曝光狀態更多曝光的曝光過多範 使用狹縫2 8及光檢出器之組合做爲前述光點位置檢出 機構,對於曝光頭3 0 1 2和3 0 2 i檢測出曝光區域3 2 1 2內的光 點P(1,1)和P(256,1)的位置、曝光區域3212內的光點P(1 ,1 024)和P (2 56,1 024)的位置,並測定彼等連結之直線的 -92- 200809406 傾斜角度和曝光頭之掃描方向間形成的角度。 使用實質傾斜角度0 ’,分別導出關於曝光頭30! 2和 3 021之出最接近滿足下述之關係式4: t tan 0 ’ = N (式 4) 的値t之自然數T。分別導出如下:對於曝光頭3(^ 2而 言T = 2 54;對於曝光頭3021而言T = 255。結果,構成在第4 圖中以斜線覆蓋之部分78及80的微鏡片係被界定爲於本曝 光時不使用的微鏡片。 然後,關於和構成在第4圖中以斜線覆蓋之範圍7 8及 80的光點以外之光點相對應的微鏡片,以同樣的做法界定 與構成在第4圖中以斜線覆蓋之範圍82及以網點覆蓋之範 圍84之光點相對應的微鏡片,追加爲於本曝光時不使用的 微鏡片。 對於此等之曝光時不使用之經界定的微鏡片,藉由圖素 部控制機構,送出平時設定爲OFF狀態的角度之信號,來 控制此等之微鏡片使成爲實質上與曝光無關。 藉此,即可以使得在曝光區域3212和3221之中,以複 數個前述曝光頭所形成的被曝光面上之重複曝光範圍之頭 間連繫區域以外之各範圍中,相對於理想的2次曝光而言, 成爲曝光過多的區域、和成爲曝光不足的區域之面積總和變 爲最小 。 <解像度之評價> 以和前述最短顯像時間之評價方法相同的方法及條件 製作前述之感光性積層體’在室溫(23°C、55%RH)下靜置 -93- 200809406 1 〇分鐘。從所得到的感光性積層體之感光層上方,使用前 述之圖案形成裝置,以列/空間=1 /1、以1微米刻度進行線 寬10微米〜100微米爲止的各線寬之曝光。此時之曝光量 係爲使前述感光層硬化所需要的光能量。在室溫下靜置10 分鐘後,在覆銅積層板上的感光層之全面上,以0.15 MPa 的噴灑壓力、前述最短顯像時間之2倍時間噴灑30 °C、1質 量%之碳酸鈉水溶液,以溶解去除未硬化區域。以光學顯微 透鏡觀察如此所得到的附有硬化樹脂圖案之覆銅積層板的 表面,測定硬化樹脂圖案之列上沒有堵塞、波浪紋等之異常 、且能形成空間的最小列寬,以其當作解像度。該解像度係 數値愈小愈佳。 <保存安定性之評價1 > 將前述之感光性積層體,於40 °C之促進乾燥條件(相對 溼度爲50%)下,保管1天。1天後,以和前述同樣的做法 ,測定感度及解像度,按照以下的基準進行經時安定性之評 價。 〔評價基準〕 〇:感度及解像度幾乎無變化,且經時安定性是優異的。 △:感度及解像度降低,顯像困難,經時安定性不佳。 X :感度及解像度顯著降低,經時安定性之評價極差,或者 不能保存。 <邊緣粗糙度之評價> 對於前述之感光性積層體,使用前述之圖案形成裝置, 依照使形成與前述曝光頭的掃描方向成垂直的方向之橫線 -94- 200809406 圖案的方式照射進行2次曝光,以和測定前述感光層的一部 分範圍之前述解像度之測定同樣的做法來形成圖案。針對所 得到的圖案中之列寬爲50微米的列之5個任意的位置,使 用雷射顯微鏡(VK-9500、凱恩斯(股)公司製,對物鏡:50 倍)進行觀察,求取在視野內之邊緣位置中,最膨脹的位置( 山頂部)及最低的位置(谷底部)間之差的絕對値,並算出所觀 察的5個位置的平均値,以它做爲邊緣粗糙度。該邊緣粗糙 度的値愈小,則表示愈良好的性能,因而較理想。 (實施例2) 一感光性薄膜之製造一 將在實施例1所得到的感光性組成物溶液,塗布於做爲 前述支撐體的16微米厚、300毫米寬、200公尺長之PET( 聚對苯二甲酸乙二酯)薄膜上,於80 °C熱風循環式乾燥機中 進行乾燥,形成厚度爲30微米之感光層。接著,在該感光 層上,藉由積層機積層做爲保護膜的20微米厚、310毫米 寬、210公尺長之聚丙烯膜,製造成前述之感光性薄膜。 一感光層性積層體之調製一 其次,在做爲前述基體的與實施例1相同的覆銅積層板 上,一邊剝離前述感光性薄膜中的保護薄膜,一邊使用真空 積層機(尼契苟蒙胴(股)公司製、VP130、),以使該感光性 薄膜中的感光層與前述之覆銅積層板相接的方式進行積 層,而調製成依照前述之覆銅積層板、前述之感光層、前述 之聚本一甲酸乙一酯薄膜(支撐體)的順序積層而成的積 層體。 -95- 200809406 壓合條件係爲:真空吸引時間爲4 0秒、壓合溫度爲7 0 。(:、壓合壓力爲〇 . 2 M P a、加壓時間爲1 〇秒鐘。 對於前述之感光性積層體’和實施例1同樣地進行感 度、解像度、保存安定性及邊緣粗糙度之評價。結果示於表 1。另外,對於解像度、保存安定性中之經時安定性(前述之 保存安定性之評價1 )及邊緣粗糙度’係和實施例1同樣地 進行評價。對於感度則是按照以下所述的做法來進行評價。 對於保存安定性,除了前述經時安定性之外’也是按照下 述之方法來進行評價。結果示於表1。 <感度之評價> 對於前述所調製的感光性積層體中的感光性薄膜之感 光層,從前述支撐體側’藉由於實施例1所說明的圖案形成 裝置,以和實施例1同樣的做法使前述感光層的一部分區域 硬化。於室溫下靜置1 〇分鐘後’從前述之感光性積層體剝 離前述支撐體,以和實施例1同樣的做法’測定使感光層硬 化所需要的光能量。 <保存安定性之評價2 > 以捲包機將前述之感光性薄膜予以捲曲’以製造感光性 薄膜之初始輥(圓筒)。 將所得到的前述之感光性薄膜之初始圓筒,以同軸滾筒 予以細長(Si it)化,在長度爲30毫米、內徑爲76毫米的ABS 樹脂製圓筒狀捲芯上,以250毫米寬捲取成150公尺’而製 作成感光性薄膜圓筒。 將如此所得到的前述感光性薄膜圓筒,打包在黑色聚乙 -96 - 200809406 烯製的筒狀袋(膜厚度:80微米、水蒸氣穿 方公尺· 24小時以下),將聚丙烯製刷押入 將前述之以刷塞住兩端的圓筒狀試樣 55 % RH下歷21日後,觀察有無端面熔融, ,進行保存安定性之評價。 〔評價基準〕 〇:確認無端面熔融,積層體處於可良好價 △: 一部分的端面有光澤,並且引起若干量 態(使用界限)。 X :端面全面無光澤,且發生多量的端面焊 (實施例3) 在實施例1中,除了將感光性組成物 份之Irgacure 819(1 -1、光聚合起始劑)變 以下述構造(2)所代表的肟衍生物(I -2、3 外,以和實施例1同樣的做法調製感光性 用該感光性組成物溶液,以和實施例2同 光性薄膜,並調製感光性積層體。Structural Formula (1) 〇C3H7 Preparation of a photosensitive laminate First, a chemical honing treatment is performed on the surface of the copper clad laminate (without through holes and having a copper thickness of 12 μm) which is formed as a wiring of the above-mentioned substrate. modulation. On the copper clad laminate, the above-mentioned photosensitivity is applied by a screen printing method using a Teflon mesh screen of 120-89 - 200809406, and the film thickness after drying is 30 μm. The composition was dried at 80 ° C for 15 minutes in a hot air circulation dryer to form a photosensitive layer, and a photosensitive laminate in which the copper-clad laminate and the photosensitive layer were laminated in this order was prepared. The photosensitive laminates described above were evaluated for sensitivity, resolution, storage stability, and edge roughness in accordance with the following methods. The results other than the shortest development time are shown in Table 1. <Evaluation of Shortest Developing Time> For the entire photosensitive layer on the copper clad laminate described above, 30 ° C, 1% by mass of sodium carbonate as an alkaline developing solution was sprayed at a pressure of 0.15 MPa. The aqueous solution was measured for the time required from the spraying of the aqueous sodium carbonate solution until the photosensitive layer on the copper clad laminate was dissolved and removed, thereby taking the shortest development time. In addition, the shortest development time is 20 seconds. <Evaluation of Sensitivity> The photosensitive layer in the photosensitive laminate described above was irradiated from 0.1 mJ/cm 2 to 100 mJ/cm 2 at intervals of 21/2 times using the pattern forming apparatus described below. The light of different light energies is subjected to two exposures to harden a part of the photosensitive layer. After standing at room temperature for 10 minutes, 30 ° C, 1% by mass aqueous sodium carbonate solution was sprayed on the copper-clad laminate at a spray pressure of 0.15 MPa at twice the shortest development time as described above. The photosensitive layer on the plate was entirely removed to dissolve and remove the unhardened region, and the thickness of the remaining hardened region was measured. Next, the relationship between the amount of irradiation of light and the thickness of the hardened layer is plotted to obtain a sensitivity curve. From the sensitivity curve thus obtained, the thickness of the hardened region was determined to be -90 - 200809406 light energy at the same thickness of 30 μm as that of the photosensitive layer before exposure, and was taken as the necessary exposure energy for hardening the photosensitive layer. <<Pattern forming apparatus>> A pattern forming apparatus 10 including an exposure head 30 having a composite wave laser light source as disclosed in Japanese Laid-Open Patent Publication No. 2005-258431 And as the above-mentioned optical modulation mechanism, it is controllable to drive only the microlens array of 1,024 microlenses 58 arranged in the main scanning direction as shown in the schematic diagram of FIG. 2, and 768 groups arranged in the sub-scanning direction. 1 024 256 columns of DMDs 36 in the microlens array, and an optical system as shown in FIGS. 1A and 1B in which light is imaged on the photosensitive film. For each of the exposure heads 30, i.e., the set tilt angle of each of the DM D36, the available microlens 58 of 1 024 trains χ 2 56 rows can be used at an angle slightly larger than the angle 0 id eal of exactly 2 exposures. The angle 0 idea i is the number N of N exposures, the number s of the direction of the microlenses 58 that can be used, the interval p of the available microlenses 58 in the column direction, and the exposure head 30 are inclined. In the meantime, the scanning line pitch δ formed by the microlens has a relationship of the following formula 1: sp sin 0 Ideal ^ Ν δ (Formula 1) DM D36 in the present embodiment, as described above, because In the case where the plurality of microlenses 58 having the same vertical and horizontal arrangement intervals are arranged in a rectangular lattice shape, pcos0ideai=5 (Expression 2), and thus the above formula 1 becomes: s tan 0 ideal = N (Expression 3) -91 - 200809406 Since s = 2 5 6 and N = 2, the angle 0 jdea! is about ο. 4 5 degrees. Thus, the inclination angle 0' can be set, for example, 〇.50 degrees. First, in order to correct the variation of the resolution and the unevenness of the exposure in the two exposures, the state of the exposure pattern of the exposed surface is adjusted. The result is shown in Figure 3. In Fig. 3, a microlens 58 is provided which is projected onto the exposed surface of the photosensitive film 12 while the stage 14 is stationary, and has a DMD 36 of the exposure heads 30! 2 and 3021. The pattern of the light spot group. Further, in a state where the pattern of the spot group shown in the lower half and the upper half appears, when the moving stage 14 performs continuous exposure, the exposure pattern formed on the exposed surface is displayed for the exposed areas 3212 and 3221. status. In addition, in FIG. 3, for the sake of convenience of explanation, the exposure patterns of the microlenses 58 which are available for use are separated into the exposure patterns of the pixel group A and the exposure patterns of the pixel group B. In addition, the actual pattern on the exposed surface is formed by superimposing two kinds of exposure patterns. As shown in FIG. 3, it can be understood that since the relative position between the exposure heads 3012 and 3021 deviates from the ideal state, both the exposure pattern of the pixel group A and the exposure pattern of the pixel group B are in the exposure region 3212. And the repeated exposure range on the coordinate axis perpendicular to the scanning direction of the aforementioned exposure head of 3221, both of which generate more exposure than the ideal two exposure states, using a combination of slits 28 and photodetectors. For the aforementioned spot position detecting mechanism, the positions of the spots P(1, 1) and P(256, 1) in the exposure region 3 2 1 2 are detected for the exposure heads 3 0 1 2 and 3 0 2 i, and exposure is performed. The positions of the spots P (1, 1 024) and P (2 56, 1 024) in the region 3212, and the angle formed between the -92-200809406 tilt angle of the line connecting the lines and the scanning direction of the exposure head are measured. Using the substantial tilt angle 0', the natural number T of 値t closest to the exposure heads 30! 2 and 3 021 that satisfies the relationship 4: t tan 0 ' = N (Expression 4) is obtained. The results are respectively derived as follows: for exposure head 3 (T = 2 54 for ^ 2; T = 255 for exposure head 3021. As a result, the microlens system constituting portions 78 and 80 covered with oblique lines in Fig. 4 is defined A microlens that is not used in the present exposure. Then, the microlens corresponding to the light spot other than the light spot constituting the range of 7 8 and 80 covered with oblique lines in Fig. 4 is defined and constructed in the same manner. The microlens corresponding to the spot 82 covered by the oblique line and the spot 84 covered by the halftone dot in Fig. 4 is added as a microlens which is not used in the present exposure. It is defined not for use in such exposure. The microlens, by means of the pixel control mechanism, sends a signal of an angle that is normally set to the OFF state, to control the microlenses to be substantially independent of the exposure. Thereby, the exposure regions 3212 and 3221 can be made. In each of the ranges other than the connection region between the heads of the repeated exposure ranges formed on the exposed surface formed by the plurality of exposure heads, the area is excessively exposed and becomes Exposure not The sum of the areas of the areas is minimized. <Evaluation of resolution> The photosensitive layered body described above was produced in the same manner and conditions as the evaluation method of the shortest development time described above at room temperature (23 ° C, 55% RH). The lower standing -93- 200809406 1 〇 min. From the photosensitive layer of the obtained photosensitive laminate, using the above-described pattern forming device, the line width is 10 μm in a column size/space =1 /1 on a 1 μm scale. The exposure of each line width up to 100 micrometers. The exposure amount at this time is the light energy required to harden the photosensitive layer. After standing at room temperature for 10 minutes, the photosensitive layer on the copper clad laminate is comprehensively applied. Spraying a 30 ° C, 1% by mass aqueous solution of sodium carbonate at a spray pressure of 0.15 MPa and twice the shortest development time to dissolve and remove the uncured region. Observing the hardened lens with an optical microlens The surface of the copper-clad laminate of the resin pattern is measured for the minimum column width which is free from abnormalities such as clogging, wavy, etc., and which can form a space, and is regarded as the resolution. The resolution coefficient is smaller. <Evaluation of Preservation Stability 1> The photosensitive laminate was stored under a condition of promoting drying at 40 ° C (relative humidity: 50%) for one day. After one day, the same as described above. In the measurement, the sensitivity and the resolution were measured, and the stability was evaluated according to the following criteria. [Evaluation criteria] 〇: The sensitivity and the resolution were almost unchanged, and the stability over time was excellent. △: The sensitivity and resolution were lowered, and the image was developed. Difficulty, poor stability over time. X: Sensitivity and resolution are significantly reduced, and evaluation of stability over time is extremely poor, or cannot be preserved. <Evaluation of edge roughness> For the above-mentioned photosensitive laminate, the above-mentioned The pattern forming apparatus is irradiated for two exposures so as to form a pattern of a horizontal line -94 - 200809406 in a direction perpendicular to the scanning direction of the exposure head, and is similar to the measurement of the resolution of a part of the photosensitive layer. Practice to form a pattern. For each of the five arbitrary positions of the column having a width of 50 μm in the obtained pattern, a laser microscope (VK-9500, manufactured by Keynes Co., Ltd., 50 times of the objective lens) was observed to obtain a field of view. In the inner edge position, the absolute difference between the most expanded position (the top of the mountain) and the lowest position (the bottom of the valley), and the average 値 of the five positions observed is calculated as the edge roughness. The smaller the roughness of the edge, the better the performance, and thus the better. (Example 2) Production of a photosensitive film A photosensitive composition solution obtained in Example 1 was applied to a PET of 16 μm thick, 300 mm wide, and 200 m long as a support (poly) The film of ethylene terephthalate) was dried in a hot air circulating dryer at 80 ° C to form a photosensitive layer having a thickness of 30 μm. Next, on the photosensitive layer, a polypropylene film of 20 μm thick, 310 mm wide and 210 m long which was laminated as a protective film was used to produce the above-mentioned photosensitive film. First, the preparation of the photosensitive layered layered body is followed by the use of a vacuum laminator while peeling off the protective film in the photosensitive film on the same copper-clad laminate as in the first embodiment.制 股 公司 VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP VP And a layered body in which the above-mentioned polyethylene monoester film (support) is laminated in this order. -95- 200809406 The pressing conditions are: vacuum suction time is 40 seconds, and pressing temperature is 70. (:, the pressure of the press is 〇. 2 MP a, and the pressurization time is 1 〇. The sensitivity, the resolution, the storage stability, and the edge roughness are evaluated in the same manner as in the first embodiment of the photosensitive laminate] The results are shown in Table 1. In addition, the stability with respect to the resolution and the storage stability (the evaluation 1 of the above-mentioned storage stability) and the edge roughness were evaluated in the same manner as in Example 1. The evaluation was carried out in accordance with the following procedure. The storage stability was evaluated in accordance with the following method in addition to the aforementioned stability over time. The results are shown in Table 1. <Evaluation of Sensitivity> The photosensitive layer of the photosensitive film in the photosensitive laminate was prepared, and a part of the photosensitive layer was cured in the same manner as in Example 1 from the support side by the pattern forming apparatus described in Example 1. After standing at room temperature for 1 minute, the above-mentioned support was peeled off from the above-mentioned photosensitive laminate, and the light energy required for curing the photosensitive layer was measured in the same manner as in Example 1. <Evaluation of Preservation Stability 2 > The above-mentioned photosensitive film was crimped by a wrapping machine to produce an initial roll (cylinder) of the photosensitive film. The initial cylinder of the obtained photosensitive film obtained, It is made into a thin film by a coaxial roller, and is formed into a photosensitive film on a cylindrical core of ABS resin having a length of 30 mm and an inner diameter of 76 mm and wound up to 150 m in a width of 250 mm. The photosensitive film cylinder thus obtained is packaged in a tubular bag made of black polyethylene-96-200809406 (film thickness: 80 μm, water vapor-passing square, 24 hours or less), The polypropylene was brushed into the cylindrical sample of the above-mentioned two-stage cylindrical sample, and the end surface was melted, and the storage stability was evaluated. The laminated body is at a good price Δ: a part of the end face is shiny, and causes a certain amount of state (use limit). X: the end face is completely dull, and a large amount of face welding occurs (Example 3) In Embodiment 1, except Sensitive The Irgacure 819 (1, 1, photopolymerization initiator) of the composition was changed to the same manner as in Example 1 except that the anthracene derivative (I-2, 3) represented by the following structure (2) was used. The photosensitive composition solution was used in the same manner as in Example 2 to prepare a photosensitive laminate.
c2h5 對於前述之感光性積層體,以和實施' 進行感度、解像度、保存安定性1和2、及 透率:25克/平 捲芯的兩端。 保存於25°C、 基於以下之基準 ί用之狀態。 之端面熔融的狀 I融之狀態。 溶液中的6質量 更爲2質量份之 聚合起始劑)以 組成物溶液。使 樣的做法形成感 構造式(2) 列2同樣的做法 邊緣粗糙度之評 -97- 200809406 價。結果如表2所示。 (實施例4) 在實施例1中,除了將感光性組成物溶液中的6質量 份之Irg a cure 8 1 9( I -1、光聚合起始劑)變更爲1質量份之 以下述構造(3)所代表的化合物(I - 3、光聚合起始劑)、及 0.5質量份之N-苯基甘胺酸(添加劑)以外,以和實施例1同 樣的做法調製感光性組成物溶液。使用該感光性組成物溶 液,以和實施例2同樣的做法形成感光性薄膜,並調製感 光性積層體。C2h5 For the above-mentioned photosensitive laminate, both the sensitivity, the resolution, the storage stability 1 and 2, and the permeability: 25 g/flat both ends of the core were carried out. Stored at 25 ° C, based on the following benchmarks. The state in which the end face is melted is melted. 6 parts by mass and 2 parts by mass of the polymerization initiator in the solution are used as a composition solution. The sense of the formation of the sense of the structure (2) column 2 the same approach edge roughness evaluation -97- 200809406 price. The results are shown in Table 2. (Example 4) In Example 1, except that 6 parts by mass of Irg a cure 8 1 9 (I-1, photopolymerization initiator) in the photosensitive composition solution was changed to 1 part by mass, the following structure was used. (3) The photosensitive composition solution was prepared in the same manner as in Example 1 except that the compound (I-3, photopolymerization initiator) and 0.5 part by mass of N-phenylglycine (additive) were used. . Using the photosensitive composition solution, a photosensitive film was formed in the same manner as in Example 2, and a photosensitive laminate was prepared.
對於前述之感光性積層體,以和實施例2同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 價。結果如表2所示。 (實施例5) 在實施例1中,除了將感光性組成物溶液中的6質量 份之丨rg a cure 81 9( I -1、光聚合起始劑)變更爲2質量份之 以下述構造(4)所代表的化合物(I -4、光聚合起始劑)以 外,以和實施例1同樣的做法調製感光性組成物溶液。使 用該感光性組成物溶液,以和實施例2同樣的做、法形成胃 光性薄膜,並調製感光性積層體。 -98- 200809406The sensitivity, resolution, storage stability 1 and 2, and edge roughness were evaluated in the same manner as in Example 2 for the photosensitive laminate described above. The results are shown in Table 2. (Example 5) In Example 1, except that 6 parts by mass of 丨rg a cure 81 9 (I-1, photopolymerization initiator) in the photosensitive composition solution was changed to 2 parts by mass, the following structure was used. The photosensitive composition solution was prepared in the same manner as in Example 1 except for the compound (I-4, photopolymerization initiator) represented by the above. Using the photosensitive composition solution, a gastric light film was formed in the same manner as in Example 2, and a photosensitive laminate was prepared. -98- 200809406
^x〇-C02CH3 構造式(4) 對於前述之感光性積層體,以和實施例2同榡 進行感度、解像度、保存安定性1和2、及邊緣粗撰 價。結果如表2所示。 (實施例6) 在實施例1中,除了將感光性組成物溶液中的 份之Irgacure 819(1 -1、光聚合起始劑)變更爲2質 以下述構造(5)所代表的化合物(I -5、光聚合起; 外’以和實施例1同樣的做法調製感光性組成物滔 用該感光性組成物溶液,以和實施例2同樣的做法 光性薄膜,並調製感光性積層體。 的做法 度之評 6質量 量份之 Ϊ劑)以 液。使 形成感^x〇-C02CH3 Structural formula (4) With respect to the above-mentioned photosensitive laminate, sensitivity, resolution, storage stability 1 and 2, and edge rough quotation were carried out in the same manner as in Example 2. The results are shown in Table 2. (Example 6) In the example 1, the Irgacure 819 (1, 1, photopolymerization initiator) in the photosensitive composition solution was changed to a compound represented by the following structure (5) ( In the same manner as in Example 1, the photosensitive composition was prepared in the same manner as in Example 1 except that the photosensitive film solution was used, and a photosensitive film was prepared in the same manner as in Example 2, and a photosensitive laminate was prepared. The degree of practice is evaluated by 6 mass parts of the tanning agent). Make sense of formation
構造式(5) 對於前述之感光性積層體,以和實施例2同樣 進行感度、解像度、保存安定性1和2、及邊緣粗鶴 價。結果如表2所示。 (實施例7) 在實施例1中,除了將感光性組成物溶液中的 份之Irgacure 819(1 -1、光聚合起始劑)變更爲2質 以下述構造(6)所代表的化合物(1 _6、光聚合起; 的做法 度之評 6質量 量份之 5劑)以 -99- 200809406 外,以和實施Μ 1同樣的做法調製感光性組成物溶 用該感光1生組成物溶、液,以和實鮮j 2⑽永的做法 光性薄膜,並調製感光性積層體° 構造式(6) 對於前述之感光性積層體,以和實施例2同樣 進行感度、解像度、保存安定性1和2、及邊緣粗糕 價。結果如表2所示。 (實施例8) 在實施例1中,除了將感光性組成物溶液中的 份之Irgacure 819(1 -1、光聚合起始劑)變更爲3質 以下述構造(7)所代表的化合物(I -7、光聚合起彳 外,以和實施例1同樣的做法調製感光性組成物滔 用該感光性組成物溶液,以和實施例2同樣的做注 光性薄膜,並調製感光性積層體。 液。使 形成感Structural Formula (5) In the same manner as in Example 2, the photosensitive laminate was subjected to sensitivity, resolution, storage stability 1 and 2, and edge roughness. The results are shown in Table 2. (Example 7) In the example 1, Irgacure 819 (1, 1, photopolymerization initiator) in the photosensitive composition solution was changed to a compound represented by the following structure (6) ( 1 _6, photopolymerization; evaluation of the degree of practice 6 parts by mass of 5 parts), in the same manner as in the implementation of Μ 1 except for -99-200809406, the photosensitive composition is dissolved, and the photosensitive composition is dissolved. The photosensitive film is prepared by using a liquid film and a photosensitive film. The structural layer (6) is obtained. The sensitivity, resolution, and storage stability of the photosensitive laminate described above are the same as in the case of the first embodiment. And 2, and the edge of the rough cake price. The results are shown in Table 2. (Example 8) In the example 1, the Irgacure 819 (1, 1, photopolymerization initiator) in the photosensitive composition solution was changed to a compound represented by the following structure (7) ( In the same manner as in Example 1, except that the photosensitive composition was used for the photopolymerization, the photosensitive composition solution was used, and a photo-sensitive film was prepared in the same manner as in Example 2, and a photosensitive laminate was prepared. Body.
的做法 度之評 6質量 量份之 Ϊ劑)以 液。使 形成感The degree of treatment of the 6 mass parts of the tincture) to the liquid. Make sense of formation
N-Ο - COCH3 構造式(7) 對於前述之感光性積層體,以和實施例2同 進行感度、解像度、保存安定性1和2、及邊緣粗 價。結果如表2所示。 的做法 度之評 -100- 200809406 (實施例9) 在實施例3之中,除了另外製作具有和它相同圖案的 玻璃製的負玻璃來代替前述之圖案形成裝置’並使該負玻 璃接觸在感光性積層體上、藉由超高壓水銀燈以40 mJ/cm 2 之曝光進行曝光。 除了使用前述之曝光方法以外,以和實施例2同樣的 做法進行感度、解像度、保存安定性1和2、及邊緣粗糖度 之評價。結果示於表1。 (實施例10) 在實施例2之中,除了以基於前述式3算出N = 1之設 定傾斜角度Θ,並基於前述式4導出最接近滿足ttan(9’ = 1 關係之値t的自然數T來進行之外,以和實施例2同樣的做 法進行感度、解像度、保存安定性1和2、及邊緣粗糙度之 評價。結果示於表1。 (實施例11) 在實施例 3中,除了將感光性組成物溶液中的 KAYARAD ZFR — 1492H(雙酚 F型環氧丙烯酸酯)、 KAYARAD ZFR— 1492H 變更爲 KAYARAD ZAR - 1413H(雙 酚A型環氧丙烯酸酯、濃度爲66%、日本化藥(股)公司製) 以外,以和實施例3同樣的做法調製感光性組成物溶液。 使用該感光性組成物溶液,以和實施例2同樣的做法形成 感光性薄膜,並調製感光性積層體。 對於前述之感光性積層體,以和實施例2同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 -101 - 200809406 價。結果如表1所示。實施例1 1中的熱交聯劑之交聯基和 黏合劑之酸性的比例:熱交聯基/酸性基=0.5/1 .0 = 0.5。 (實施例12) 在實施例 3中,除了將感光性組成物溶液中的之 KAYARAD ZFR — 1492H(雙酚F型環氧丙烯酸酯)變更爲下 述之黏合劑(以前述之一般式(2)所代表的化合物做爲原料之 黏合劑)以外,以和實施例3同樣的做法調製感光性組成物 溶液。使用該感光性組成物溶液,以和實施例2同樣的做 法形成感光性薄膜,並調製感光性積層體。 對於前述之感光性積層體,以和實施例2同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 價。結果如表1所示。 一黏合劑之調製一 將200質量份之艾普特YDPF-1 000(東都化成公司製) 、36質量份之丙烯酸、0.2質量份之甲基氫醌、60質量份 之丙二醇單甲基醚單乙酸酯投入反應容器中,於90°C下藉 由攪拌進行反應。接著,將內溫冷卻到6 0 °C,加入1質量 份之三苯基膦,於1 〇〇 °C下攪拌3小時。然後,加入50質 量份之四氫酞酸酐、和94質量份之丙二醇單甲基醚單乙酸 酯,於85°C下攪拌6小時’得到濃度65%之黏合劑。 (比較例1) 在實施例1中,除了將感光性組成物溶液中的6質量 份之Irgacure 819(1 -1、光聚合起始劑)變更爲3質量份之N-Ο-COCH3 Structural Formula (7) With respect to the above-mentioned photosensitive laminate, sensitivity, resolution, storage stability 1 and 2, and edge roughness were carried out in the same manner as in Example 2. The results are shown in Table 2. Evaluation of the degree of practice-100-200809406 (Embodiment 9) In Embodiment 3, in addition to the production of a negative glass made of glass having the same pattern as that in place of the above-described pattern forming device 'and the negative glass is contacted The photosensitive laminate was exposed to light at 40 mJ/cm 2 by an ultrahigh pressure mercury lamp. Evaluations of sensitivity, resolution, storage stability 1 and 2, and edge roughness were carried out in the same manner as in Example 2 except that the above-described exposure method was used. The results are shown in Table 1. (Embodiment 10) In the second embodiment, the set inclination angle Θ of N = 1 is calculated based on the above Equation 3, and the natural number closest to the ttan (9' = 1 relationship 値t) is derived based on the above Equation 4. In the same manner as in Example 2, the sensitivity, the resolution, the storage stability 1 and 2, and the edge roughness were evaluated in the same manner as in Example 2. The results are shown in Table 1. (Example 11) In Example 3, In addition to KAYARAD ZFR-1492H (bisphenol F epoxy acrylate) and KAYARAD ZFR-1492H in the photosensitive composition solution, KAYARAD ZAR-1413H (bisphenol A epoxy acrylate, 66% concentration, Japan) A photosensitive composition solution was prepared in the same manner as in Example 3 except that the photosensitive composition solution was used, and a photosensitive film was formed in the same manner as in Example 2, and the photosensitivity was prepared. In the same manner as in Example 2, the photosensitivity, the resolution, the storage stability 1 and 2, and the edge roughness were evaluated in the same manner as in Example 2. The results are shown in Table 1. Example 1 heat in 1 The ratio of the crosslinking group of the crosslinking agent to the acidity of the binder: thermal crosslinking group / acidic group = 0.5 / 1. 0 = 0.5. (Example 12) In Example 3, except in the photosensitive composition solution The KAYARAD ZFR-1492H (bisphenol F type epoxy acrylate) was changed to the following adhesive (the binder represented by the above-mentioned general formula (2) as a raw material), and Example 3 In the same manner, a photosensitive composition solution was prepared. Using the photosensitive composition solution, a photosensitive film was formed in the same manner as in Example 2, and a photosensitive laminate was prepared. The photosensitive laminate described above and examples 2 The same procedure was used to evaluate the sensitivity, resolution, preservation stability 1 and 2, and edge roughness. The results are shown in Table 1. A binder preparation of 200 parts by mass of Epter YDPF-1 000 (East 36 parts by mass of acrylic acid, 0.2 parts by mass of methylhydroquinone, and 60 parts by mass of propylene glycol monomethyl ether monoacetate were placed in a reaction vessel, and the reaction was carried out by stirring at 90 ° C. , the internal temperature is cooled to 60 °C, plus 1 part by mass of triphenylphosphine, stirred at 1 ° C for 3 hours, then, 50 parts by mass of tetrahydrophthalic anhydride, and 94 parts by mass of propylene glycol monomethyl ether monoacetate at 85 ° The mixture was stirred for 6 hours to obtain a binder having a concentration of 65%. (Comparative Example 1) In Example 1, except for 6 parts by mass of Irgacure 819 (1 -1, photopolymerization initiator) in the photosensitive composition solution ) changed to 3 parts by mass
Irgacu re 9 07以外,以和實施例1同樣的做法調製感光性 -10 2- 200809406 組成物溶液,並調製感光性積層體。 對於前述之感光性積層體,以和實施例1同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 價。結果如表1所示。 (比較例2) 除了使用比較例1之感光性組成物溶液(將6質量份之 Irgacu re 81 9變更爲3質量份之丨rg a cure 9 07)以外,以和 實施例2同樣的做法調製感光性組成物溶液,並調製感光 性積層體。 對於前述之感光性積層體,以和實施例2同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 價。結果如表1所示。 (比較例3) 在實施例1中,除了將感光性組成物溶液中的 KAYARAD ZFR — 1 492H(雙酚F型環氧丙烯酸酯)變更爲 RIPOXY PR-300(兒茶酚酚醛清漆型環氧丙嫌g变酯、濃度爲 6 5 %、昭和咼分子公司製)以外,以和實施例1同樣的做法 調製感光性組成物溶液,並調製感光性積層體。 對於前述之感光性積層體,以和實施例1同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 價。結果如表1所示。 (比較例4) 除了使用比較例3之感光性組成物溶液(將KAYARAD ZFR — 1492H變更爲RIPOXY PR-300)以外,以和實施例2 -103 - 200809406 同樣的做法調製感光性組成物溶液’並調製感光性積層體。 對於前述之感光性積層體’以和實施例2同樣的做法 進行感度、解像度、保存安定性1和2、及邊緣粗糙度之評 價。結果如表1所示。 表1 感度 (mJ/cm2) 解像度 (微米) 保存安定性 1 保存安定性 2 邊緣粗糙度 ~實施例1 98 45 〇 — 1.6 實施例2 54 35 〇 〇 1.4 實施例3 49 35 〇 〇 1.4 實施例4 41 35 〇 〇 1.4 實施例5 43 35 〇 〇 1.4 實施例6 44 35 〇 〇 1.4 實施例7 43 35 〇 〇 1.4 實施例8 45 35 〇 〇 1.4 實施例9 一 35 〇 〇 1.5 實施例10 54 35 〇 〇 2.1 實施例11 47 35 〇 〇 1.4 實施例12 48 35 1 〇 〇 1.4 比較例1 ~?30 _ 45 X — Ti 比較例2 70 35 X 〇 1.4 比較例3 110 50 Δ .— 1.6 比較例4 65 40 Δ Δ 1.4 由表1之結果,可以判定:在使用本發明之感光性組成 物及本發明之感光性薄膜的實施例1〜1 2,可以形成一種高 感度且保存安定性優異的高解像度的圖案。 【產業上利用可能性】 本發明之感光性組成物係可以形成高感度、生保存性及 處理性優異的高精細之圖案,而且可以廣泛地使用於形成適 合於含有包封基板的印刷配線基板等之製造上的圖案、或者 -104- 200809406 半導體領域的高精細永久圖案中之永久圖案(層間絕緣膜、 保護膜、及耐焊圖案等)’並且可以非常適合使用於形成本 發明之感光性薄膜、及使用於永久圖案形成方法、印刷基板 之形成上。 本發明之感光性薄膜係藉由使用本發明之感光性組成 物’因而可以形成高感度、生保存性及處理性優異的高精細 之圖案,而且可以廣泛地使用於形成適合於含有包封基板的 印刷配線基板等之製造上的圖案、或者半導體領域的高精細 永久圖案中之永久圖案(層間絕緣膜、保護膜、及耐焊圖案 等),並且可以非常適合使用於形成本發明之感光性薄膜、 及使用於永久圖案形成方法、印刷基板之形成上。 本發明之永久圖案形成方法,由於係藉由使用本發明之 感光性組成物或感光性薄膜的緣故,因而可以形成高感度、 生保存性及處理性優異的高精細之圖案,所以能夠高精細且 效率良好地形成適合於含有包封基板的印刷配線基板等之 製造上的圖案、或者半導體領域的高精細永久圖案中之永久 圖案(層間絕緣膜、保護膜、及耐焊圖案等),因此可以使用 於形成需要高精細曝光的各種圖案之形成上,尤其非常適合 使用於本發明之印刷基板之形成上。 【圖式簡單說明】 第1 A圖係顯示曝光頭之詳細構成的一例之上視圖。 第1 B圖係顯示曝光頭之詳細構成的一例之側面圖。 第2圖爲顯示圖案形成裝置的DMD之一例的部分放大 圖。 -105- 200809406 第3圖係顯示在鄰接的曝光頭間具有相對位置之偏離 及安裝角度誤差時,於被曝光面上之圖案產生偏差的例子之 說明圖。 第4圖係顯示於第3圖中只有使用經選擇的使用圖素部 之曝光的說明圖。 【元件符號說明】 12 感光材料、感光層 36 數位微鏡片裝置(DMD) 38 纖維陣列光源 40 透鏡系統 42 鏡片 44、46 組合透鏡 48 聚光透.鏡 50 透鏡系統 52、54 透鏡 56 SRAM單位(記憶體) -106-The composition of the photosensitive -10 2 - 200809406 composition was prepared in the same manner as in Example 1 except for Irgacu re 9 07, and a photosensitive laminate was prepared. The sensitivity, resolution, storage stability 1 and 2, and edge roughness were evaluated in the same manner as in Example 1 for the photosensitive laminate described above. The results are shown in Table 1. (Comparative Example 2) The same procedure as in Example 2 was carried out, except that the photosensitive composition solution of Comparative Example 1 was used (6 parts by mass of Irgacu re 81 9 was changed to 3 parts by mass of 丨rg a cure 9 07). The photosensitive composition solution was prepared, and a photosensitive laminate was prepared. The sensitivity, resolution, storage stability 1 and 2, and edge roughness were evaluated in the same manner as in Example 2 for the photosensitive laminate described above. The results are shown in Table 1. (Comparative Example 3) In Example 1, except that KAYARAD ZFR-1 492H (bisphenol F type epoxy acrylate) in the photosensitive composition solution was changed to RIPOXY PR-300 (catechol novolac type epoxy) The photosensitive composition solution was prepared in the same manner as in Example 1 except that the glycerin was changed to a concentration of 65 %, and the concentration was changed to 65% by the product of Showa Co., Ltd., and a photosensitive laminate was prepared. The sensitivity, resolution, storage stability 1 and 2, and edge roughness were evaluated in the same manner as in Example 1 for the photosensitive laminate described above. The results are shown in Table 1. (Comparative Example 4) A photosensitive composition solution was prepared in the same manner as in Example 2-103-200809406 except that the photosensitive composition solution of Comparative Example 3 (changed KAYARAD ZFR-1492H to RIPOXY PR-300) was used. And modulating the photosensitive laminate. The sensitivity, the resolution, the storage stability 1 and 2, and the edge roughness were evaluated in the same manner as in Example 2 for the photosensitive laminate described above. The results are shown in Table 1. Table 1 Sensitivity (mJ/cm2) Resolution (μm) Preservation Stability 1 Preservation Stability 2 Edge Roughness ~ Example 1 98 45 〇 - 1.6 Example 2 54 35 〇〇 1.4 Example 3 49 35 〇〇 1.4 Example 4 41 35 〇〇 1.4 Example 5 43 35 〇〇 1.4 Example 6 44 35 〇〇 1.4 Example 7 43 35 〇〇 1.4 Example 8 45 35 〇〇 1.4 Example 9 A 35 〇〇 1.5 Example 10 54 35 〇〇 2.1 Example 11 47 35 〇〇 1.4 Example 12 48 35 1 〇〇 1.4 Comparative Example 1 ~?30 _ 45 X - Ti Comparative Example 2 70 35 X 〇 1.4 Comparative Example 3 110 50 Δ .- 1.6 Comparison Example 4 65 40 Δ Δ 1.4 From the results of Table 1, it can be judged that in Examples 1 to 12 using the photosensitive composition of the present invention and the photosensitive film of the present invention, a high sensitivity and excellent storage stability can be formed. High resolution pattern. [Industrial Applicability] The photosensitive composition of the present invention can form a high-definition pattern excellent in high sensitivity, storage stability, and handleability, and can be widely used to form a printed wiring substrate suitable for containing an encapsulating substrate. Or the like, or the permanent pattern (interlayer insulating film, protective film, and solder resist pattern, etc.) in the high-definition permanent pattern in the semiconductor field' and can be very suitably used for forming the photosensitivity of the present invention. The film is used for forming a permanent pattern and forming a printed substrate. The photosensitive film of the present invention can form a high-definition pattern excellent in high sensitivity, good storage stability, and handleability by using the photosensitive composition of the present invention, and can be widely used to form a substrate suitable for inclusion. a pattern on the manufacture of a printed wiring board or the like, or a permanent pattern (interlayer insulating film, protective film, solder resist pattern, etc.) in a high-definition permanent pattern in the semiconductor field, and can be suitably used for forming the photosensitivity of the present invention. The film and the method for forming a permanent pattern and the formation of a printed substrate. Since the permanent pattern forming method of the present invention is formed by using the photosensitive composition or the photosensitive film of the present invention, it is possible to form a high-definition pattern excellent in high sensitivity, storage stability, and handleability. Further, it is effective to form a pattern suitable for manufacturing a printed wiring board or the like including an encapsulating substrate, or a permanent pattern (interlayer insulating film, protective film, solder resist pattern, etc.) in a high-definition permanent pattern in the semiconductor field, and thus It can be used to form the formation of various patterns requiring high-definition exposure, and is particularly well suited for use in the formation of the printed substrate of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a top view showing an example of a detailed configuration of an exposure head. Fig. 1B is a side view showing an example of a detailed configuration of an exposure head. Fig. 2 is a partially enlarged view showing an example of a DMD of the pattern forming apparatus. -105- 200809406 Fig. 3 is an explanatory view showing an example in which the pattern on the surface to be exposed is deviated when there is a deviation in the relative position between the adjacent exposure heads and an error in the mounting angle. Fig. 4 is an explanatory view showing the exposure using only the selected pixel portion in Fig. 3. [Description of component symbols] 12 Photosensitive material, photosensitive layer 36 Digital microlens device (DMD) 38 Fiber array light source 40 Lens system 42 Lens 44, 46 Combined lens 48 Concentrating lens 50 Lens system 52, 54 Lens 56 SRAM unit ( Memory) -106-
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CN102638939A (en) * | 2012-04-19 | 2012-08-15 | 蔡新民 | Making method of nobaking photosensitive soldermask circuit board |
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