TW200804499A - A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof - Google Patents

A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof Download PDF

Info

Publication number
TW200804499A
TW200804499A TW96101921A TW96101921A TW200804499A TW 200804499 A TW200804499 A TW 200804499A TW 96101921 A TW96101921 A TW 96101921A TW 96101921 A TW96101921 A TW 96101921A TW 200804499 A TW200804499 A TW 200804499A
Authority
TW
Taiwan
Prior art keywords
resin
resin solution
weight
layer
novel
Prior art date
Application number
TW96101921A
Other languages
English (en)
Chinese (zh)
Other versions
TWI344478B (cg-RX-API-DMAC7.html
Inventor
Shioda Hidekazu
Kuang-Lung Kuo
Original Assignee
Echem Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Echem Solutions Corp filed Critical Echem Solutions Corp
Priority to TW96101921A priority Critical patent/TW200804499A/zh
Publication of TW200804499A publication Critical patent/TW200804499A/zh
Application granted granted Critical
Publication of TWI344478B publication Critical patent/TWI344478B/zh

Links

Landscapes

  • Materials For Photolithography (AREA)
TW96101921A 2007-01-18 2007-01-18 A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof TW200804499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW96101921A TW200804499A (en) 2007-01-18 2007-01-18 A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW96101921A TW200804499A (en) 2007-01-18 2007-01-18 A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof

Publications (2)

Publication Number Publication Date
TW200804499A true TW200804499A (en) 2008-01-16
TWI344478B TWI344478B (cg-RX-API-DMAC7.html) 2011-07-01

Family

ID=44765850

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96101921A TW200804499A (en) 2007-01-18 2007-01-18 A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof

Country Status (1)

Country Link
TW (1) TW200804499A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
TWI344478B (cg-RX-API-DMAC7.html) 2011-07-01

Similar Documents

Publication Publication Date Title
CN100538531C (zh) 水溶性树脂组合物和使用该组合物形成图案的方法
TWI417682B (zh) 微細化圖案之形成方法及用於它之光阻基板處理液
JP6090777B2 (ja) ナノ構造体を表面に備える基板の製造方法
KR101720967B1 (ko) 기판 처리액 및 이것을 사용한 레지스트 기판 처리 방법
CN101230226B (zh) 一种双面微影蚀刻新制程及其保护层的组成
TW201214508A (en) Methods of forming photolithographic patterns
KR20090027251A (ko) 미세화된 레지스트 패턴의 형성방법
TWI838356B (zh) 光阻移除劑組合物
TW200839451A (en) Composition for producing antireflecting film and pattern forming method using the same
TW573231B (en) An anti-reflection coating composition and process for forming a resist pattern using the same
TW200836025A (en) Treatment liquid for developed resist substrate and treating method for resist substrate using therewith
TWI566057B (zh) 光阻圖案之表面處理方法、使用其之光阻圖案形成方法及使用於其之被覆層形成用組成物
TW200937129A (en) Composition for producing antireflection firm, and method for producing a pattern using the same
JP2021518584A (ja) ネガ作動型超厚膜フォトレジスト
CN103460136B (zh) 上表面抗反射膜形成用组合物以及使用其的图案形成方法
JP2591644B2 (ja) ホトレジストの剥離液
TW200804499A (en) A novel manufacturing process of two-sided lithography/etching and the composition of protection layer thereof
JPS5968735A (ja) 感光性組成物
CN102662304B (zh) 一种双面微影蚀刻制程
KR102214220B1 (ko) 마스크 블랭크 및 전사용 마스크
CN101395537B (zh) 感光性有机膜用显影液组合物
TW201030806A (en) Method for producing a resist pattern
TW202603492A (zh) 用於邊緣保護層之永續且更環保之解決方案的微影組合物及其使用方法
TW202546552A (zh) 形成半導體裝置的方法