TW200802960A - Interconnects for semiconductor light emitting devices - Google Patents
Interconnects for semiconductor light emitting devicesInfo
- Publication number
- TW200802960A TW200802960A TW095133287A TW95133287A TW200802960A TW 200802960 A TW200802960 A TW 200802960A TW 095133287 A TW095133287 A TW 095133287A TW 95133287 A TW95133287 A TW 95133287A TW 200802960 A TW200802960 A TW 200802960A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- semiconductor light
- metal layer
- mount
- emitting device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/226,151 US7348212B2 (en) | 2005-09-13 | 2005-09-13 | Interconnects for semiconductor light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802960A true TW200802960A (en) | 2008-01-01 |
TWI427815B TWI427815B (zh) | 2014-02-21 |
Family
ID=37648079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095133287A TWI427815B (zh) | 2005-09-13 | 2006-09-08 | 半導體發光裝置的互連 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7348212B2 (zh) |
EP (1) | EP1927142A1 (zh) |
JP (1) | JP5513707B2 (zh) |
CN (1) | CN101263614B (zh) |
TW (1) | TWI427815B (zh) |
WO (1) | WO2007031893A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI455665B (zh) * | 2012-11-05 | 2014-10-01 | Ritedia Corp | 覆晶式發光二極體封裝模組及其製法 |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006525682A (ja) | 2003-04-30 | 2006-11-09 | クリー インコーポレイテッド | 高出力固体発光素子パッケージ |
AU2003263727A1 (en) * | 2003-09-19 | 2005-04-11 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
EP1756875A4 (en) * | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US7736945B2 (en) * | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
US20070015300A1 (en) * | 2005-07-15 | 2007-01-18 | Yu-Chuan Liu | Method for fabricating a light-emitting device |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
US20070170596A1 (en) * | 2006-01-26 | 2007-07-26 | Way-Jze Wen | Flip-chip light emitting diode with high light-emitting efficiency |
CN100414704C (zh) * | 2006-06-30 | 2008-08-27 | 广州南科集成电子有限公司 | 平面倒装led集成芯片及制造方法 |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US8021904B2 (en) * | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
US7633151B2 (en) * | 2007-03-16 | 2009-12-15 | Advanced Micro Devices, Inc. | Integrated circuit package lid with a wetting film |
US20080299688A1 (en) * | 2007-06-02 | 2008-12-04 | Pei-Choa Wang | Method of bonding a solder type light emitting diode chip |
WO2008152552A1 (en) * | 2007-06-13 | 2008-12-18 | Philips Intellectual Property & Standards Gmbh | Led lighting device |
TWI350563B (en) * | 2007-07-10 | 2011-10-11 | Delta Electronics Inc | Manufacturing method of light emitting diode apparatus |
US7621752B2 (en) * | 2007-07-17 | 2009-11-24 | Visteon Global Technologies, Inc. | LED interconnection integrated connector holder package |
US11114594B2 (en) * | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US8368100B2 (en) | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8384115B2 (en) * | 2008-08-01 | 2013-02-26 | Cree, Inc. | Bond pad design for enhancing light extraction from LED chips |
CN101752475B (zh) * | 2008-12-22 | 2012-06-20 | 亿光电子工业股份有限公司 | 发光二极管结构及其制作方法 |
CN101771112B (zh) * | 2009-01-06 | 2011-12-07 | 宏齐科技股份有限公司 | 增加发光效率的晶片级发光二极管封装结构及其制作方法 |
US8202741B2 (en) * | 2009-03-04 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Method of bonding a semiconductor device using a compliant bonding structure |
US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
US8476668B2 (en) * | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
US8741715B2 (en) * | 2009-04-29 | 2014-06-03 | Cree, Inc. | Gate electrodes for millimeter-wave operation and methods of fabrication |
US7989824B2 (en) * | 2009-06-03 | 2011-08-02 | Koninklijke Philips Electronics N.V. | Method of forming a dielectric layer on a semiconductor light emitting device |
EP2478555A1 (en) * | 2009-09-17 | 2012-07-25 | Koninklijke Philips Electronics N.V. | Geometry of contact sites at brittle inorganic layers in electronic devices |
US20110084612A1 (en) * | 2009-10-09 | 2011-04-14 | General Led, Inc., A Delaware Corporation | Hybrid chip-on-heatsink device and methods |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
US9324927B2 (en) | 2011-12-08 | 2016-04-26 | Koninklijke Philips N.V. | Semiconductor light emitting device with thick metal layers |
WO2013084155A1 (en) | 2011-12-08 | 2013-06-13 | Koninklijke Philips Electronics N.V. | Forming thick metal layers on a semiconductor light emitting device |
WO2013084126A1 (en) | 2011-12-08 | 2013-06-13 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with thick metal layers |
WO2013084103A1 (en) | 2011-12-08 | 2013-06-13 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with thick metal layers |
JP5983125B2 (ja) * | 2012-07-18 | 2016-08-31 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
US9105807B2 (en) * | 2013-04-22 | 2015-08-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor optical emitting device with grooved substrate providing multiple angled light emission paths |
WO2014174400A1 (en) | 2013-04-23 | 2014-10-30 | Koninklijke Philips N.V. | Side interconnect for light emitting device |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
US10367126B2 (en) * | 2014-07-18 | 2019-07-30 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light-emitting device |
EP3172771B1 (en) | 2014-07-23 | 2019-03-20 | Crystal Is, Inc. | Illumination device with improved photon extraction, and assembling method therefor |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
US10141197B2 (en) * | 2016-03-30 | 2018-11-27 | Stmicroelectronics S.R.L. | Thermosonically bonded connection for flip chip packages |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
CN105870265A (zh) * | 2016-04-19 | 2016-08-17 | 京东方科技集团股份有限公司 | 发光二极管基板及其制备方法、显示装置 |
DE102017107961B4 (de) * | 2017-04-12 | 2022-10-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Beleuchtungseinrichtung und Beleuchtungseinrichtung |
US10720751B2 (en) * | 2017-09-27 | 2020-07-21 | Advanced Semiconductor Engineering, Inc. | Optical package structure, optical module, and method for manufacturing the same |
JP7168280B2 (ja) * | 2018-06-26 | 2022-11-09 | 住友電工デバイス・イノベーション株式会社 | 半導体装置、および、半導体チップの搭載方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02177540A (ja) * | 1988-12-28 | 1990-07-10 | Fujitsu Ltd | 半導体装置 |
JPH07321114A (ja) * | 1994-05-23 | 1995-12-08 | Sharp Corp | 半導体装置のハンダバンプ形成の方法および構造 |
US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
US6274924B1 (en) * | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP2002343744A (ja) * | 2001-05-21 | 2002-11-29 | Seiko Epson Corp | めっき方法及びめっき装置 |
JP2003197672A (ja) * | 2001-12-25 | 2003-07-11 | Nec Electronics Corp | 半導体装置の製造方法 |
JP4032752B2 (ja) * | 2002-01-18 | 2008-01-16 | 松下電器産業株式会社 | 複合発光素子の製造方法 |
JP3509809B2 (ja) * | 2002-04-30 | 2004-03-22 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
US6828596B2 (en) * | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
US6977396B2 (en) * | 2003-02-19 | 2005-12-20 | Lumileds Lighting U.S., Llc | High-powered light emitting device with improved thermal properties |
US6979863B2 (en) * | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP2004356129A (ja) * | 2003-05-27 | 2004-12-16 | Nichia Chem Ind Ltd | 半導体装置及びその製造方法 |
US6864571B2 (en) * | 2003-07-07 | 2005-03-08 | Gelcore Llc | Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking |
US6876008B2 (en) * | 2003-07-31 | 2005-04-05 | Lumileds Lighting U.S., Llc | Mount for semiconductor light emitting device |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
WO2005029185A2 (en) * | 2003-09-16 | 2005-03-31 | Matsushita Electric Industrial Co., Ltd. | Led lighting source and led lighting apparatus |
KR101025844B1 (ko) * | 2003-10-01 | 2011-03-30 | 삼성전자주식회사 | SnAgAu 솔더범프, 이의 제조 방법 및 이 방법을이용한 발광소자 본딩 방법 |
JP4246134B2 (ja) * | 2003-10-07 | 2009-04-02 | パナソニック株式会社 | 半導体素子の実装方法、及び半導体素子実装基板 |
KR100604334B1 (ko) * | 2003-11-25 | 2006-08-08 | (주)케이나인 | 플립칩 패키징 공정에서 접합력이 향상된 플립칩 접합 방법 |
JP2005191556A (ja) * | 2003-12-02 | 2005-07-14 | Bondotekku:Kk | ガス封入金接合方法及び装置 |
US7279724B2 (en) * | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
JP4539235B2 (ja) * | 2004-08-27 | 2010-09-08 | 日亜化学工業株式会社 | 半導体装置およびその製造方法 |
KR100862457B1 (ko) * | 2004-12-29 | 2008-10-08 | 삼성전기주식회사 | 금속컬럼을 이용한 발광소자의 플립칩 본딩 구조체 |
US20070034858A1 (en) * | 2005-08-11 | 2007-02-15 | Hock Ng | Light-emitting diodes with quantum dots |
-
2005
- 2005-09-13 US US11/226,151 patent/US7348212B2/en active Active
-
2006
- 2006-08-30 CN CN2006800336389A patent/CN101263614B/zh active Active
- 2006-08-30 WO PCT/IB2006/053017 patent/WO2007031893A1/en active Application Filing
- 2006-08-30 EP EP06795827A patent/EP1927142A1/en not_active Withdrawn
- 2006-09-08 TW TW095133287A patent/TWI427815B/zh active
- 2006-09-13 JP JP2006279265A patent/JP5513707B2/ja active Active
-
2008
- 2008-02-11 US US12/028,925 patent/US20080142833A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI455665B (zh) * | 2012-11-05 | 2014-10-01 | Ritedia Corp | 覆晶式發光二極體封裝模組及其製法 |
Also Published As
Publication number | Publication date |
---|---|
CN101263614A (zh) | 2008-09-10 |
US7348212B2 (en) | 2008-03-25 |
JP5513707B2 (ja) | 2014-06-04 |
EP1927142A1 (en) | 2008-06-04 |
US20070057271A1 (en) | 2007-03-15 |
WO2007031893A1 (en) | 2007-03-22 |
US20080142833A1 (en) | 2008-06-19 |
TWI427815B (zh) | 2014-02-21 |
JP2007081417A (ja) | 2007-03-29 |
CN101263614B (zh) | 2010-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200802960A (en) | Interconnects for semiconductor light emitting devices | |
TW200511612A (en) | Mount for semiconductor light emitting device | |
TW200614614A (en) | Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof | |
WO2008112064A3 (en) | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures | |
TW200637035A (en) | Flip chip type nitride semiconductor light emitting device | |
WO2009077974A3 (en) | Contact for a semiconductor light emitting device | |
TW200629584A (en) | Light emitting device and manufacture method thereof | |
TW200802984A (en) | Optoelectronic semiconductor chip | |
TW200641969A (en) | Sensor type semiconductor device and method for fabricating thereof | |
TW200501453A (en) | High-powered light emitting device with improved thermal properties | |
JP2008505483A5 (zh) | ||
WO2004075253A3 (en) | Inverted light emitting diode on conductive substrate | |
TW200637034A (en) | GaN-based light-emitting diode and luminous device | |
TW200726340A (en) | Circuit device and manufacturing method of the same | |
TW200802790A (en) | Electronic substrate, semiconductor device, and electronic device | |
TW200636999A (en) | Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same | |
WO2006011936A3 (en) | Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures | |
WO2004084320A3 (en) | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact | |
TW200620699A (en) | Light emitting device with transparent submount having backside vias | |
JP2007514320A5 (zh) | ||
TW200610078A (en) | Packaging with metal studs formed on solder pads | |
TW200707606A (en) | Method of manufacturing an assembly and assembly | |
TW200618355A (en) | Semiconductor light-emitting device and its manufacturing method | |
TW200629610A (en) | Light emitting element and the manufacturing method | |
TW200744142A (en) | Semiconductor device including electrically conductive bump and method of manufacturing the same |