TW200802864A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- TW200802864A TW200802864A TW096106876A TW96106876A TW200802864A TW 200802864 A TW200802864 A TW 200802864A TW 096106876 A TW096106876 A TW 096106876A TW 96106876 A TW96106876 A TW 96106876A TW 200802864 A TW200802864 A TW 200802864A
- Authority
- TW
- Taiwan
- Prior art keywords
- field effect
- effect transistor
- independently represent
- atom
- formulae
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 150000001875 compounds Chemical group 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 125000004434 sulfur atom Chemical group 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006099683 | 2006-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200802864A true TW200802864A (en) | 2008-01-01 |
Family
ID=38655211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096106876A TW200802864A (en) | 2006-03-31 | 2007-02-27 | Field effect transistor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5167560B2 (ja) |
| TW (1) | TW200802864A (ja) |
| WO (1) | WO2007125671A1 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI394306B (zh) * | 2008-08-26 | 2013-04-21 | Univ Nat Chiao Tung | 光電記憶體元件、其製造以及量測方法 |
| US8440713B2 (en) | 2008-04-17 | 2013-05-14 | Ricoh Company, Ltd. | [1]benzothieno[3,2-B][1]benzothiophene compound and method for producing the same, and organic electronic device using the same |
| TWI493764B (zh) * | 2008-04-24 | 2015-07-21 | Merck Patent Gmbh | 電子裝置 |
| CN102224158B (zh) * | 2008-11-21 | 2015-09-16 | 日本化药株式会社 | 新的杂环化合物及其用途 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2516688B2 (ja) * | 1989-08-02 | 1996-07-24 | シャープ株式会社 | 液晶表示装置 |
| WO2008146597A1 (ja) * | 2007-05-24 | 2008-12-04 | Nippon Kayaku Kabushiki Kaisha | 芳香族化合物の製造方法 |
| JP5252482B2 (ja) * | 2008-03-31 | 2013-07-31 | 国立大学法人広島大学 | 発光素子 |
| JP5420191B2 (ja) * | 2008-04-25 | 2014-02-19 | 山本化成株式会社 | 有機トランジスタ |
| JP2010010549A (ja) * | 2008-06-30 | 2010-01-14 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JP2010016037A (ja) * | 2008-07-01 | 2010-01-21 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法 |
| US7812346B2 (en) * | 2008-07-16 | 2010-10-12 | Cbrite, Inc. | Metal oxide TFT with improved carrier mobility |
| KR101829309B1 (ko) | 2010-01-22 | 2018-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9496405B2 (en) * | 2010-05-20 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer |
| DE102010031897A1 (de) | 2010-07-21 | 2012-01-26 | Heraeus Clevios Gmbh | Halbleiter auf Basis substituierter [1] Benzothieno[3,2-b][1]-benzothiophene |
| JP5632531B2 (ja) | 2011-03-10 | 2014-11-26 | 国立大学法人東京工業大学 | 有機半導体材料 |
| KR20140009023A (ko) * | 2012-07-13 | 2014-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2017159025A1 (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 光電変換素子および固体撮像装置 |
| KR102631401B1 (ko) * | 2018-08-28 | 2024-01-29 | 삼성전자주식회사 | 화합물, 박막 트랜지스터 및 전자 소자 |
| US11066418B2 (en) | 2018-11-26 | 2021-07-20 | Samsung Electronics Co., Ltd. | Compound and thin film transistor and electronic device |
| JPWO2023276827A1 (ja) | 2021-06-30 | 2023-01-05 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
| JP4157463B2 (ja) * | 2003-11-27 | 2008-10-01 | 独立行政法人科学技術振興機構 | 新規なベンゾジカルコゲノフェン誘導体、その製造方法およびそれを用いた有機半導体デバイス |
| JP2007273594A (ja) * | 2006-03-30 | 2007-10-18 | Nippon Kayaku Co Ltd | 電界効果トランジスタ |
-
2007
- 2007-02-20 JP JP2008513095A patent/JP5167560B2/ja active Active
- 2007-02-20 WO PCT/JP2007/053092 patent/WO2007125671A1/ja active Application Filing
- 2007-02-27 TW TW096106876A patent/TW200802864A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8440713B2 (en) | 2008-04-17 | 2013-05-14 | Ricoh Company, Ltd. | [1]benzothieno[3,2-B][1]benzothiophene compound and method for producing the same, and organic electronic device using the same |
| TWI427067B (zh) * | 2008-04-17 | 2014-02-21 | Ricoh Co Ltd | 〔１〕苯並噻吩並〔３，２－ｂ〕〔１〕苯並噻吩化合物和製備彼之方法和使用彼之有機電子裝置 |
| TWI493764B (zh) * | 2008-04-24 | 2015-07-21 | Merck Patent Gmbh | 電子裝置 |
| TWI394306B (zh) * | 2008-08-26 | 2013-04-21 | Univ Nat Chiao Tung | 光電記憶體元件、其製造以及量測方法 |
| CN102224158B (zh) * | 2008-11-21 | 2015-09-16 | 日本化药株式会社 | 新的杂环化合物及其用途 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007125671A1 (ja) | 2007-11-08 |
| JP5167560B2 (ja) | 2013-03-21 |
| JPWO2007125671A1 (ja) | 2009-09-10 |
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