TW200802371A - Refreshing a phase change memory - Google Patents

Refreshing a phase change memory

Info

Publication number
TW200802371A
TW200802371A TW096115019A TW96115019A TW200802371A TW 200802371 A TW200802371 A TW 200802371A TW 096115019 A TW096115019 A TW 096115019A TW 96115019 A TW96115019 A TW 96115019A TW 200802371 A TW200802371 A TW 200802371A
Authority
TW
Taiwan
Prior art keywords
phase change
change memory
refreshing
data retention
crystallization speed
Prior art date
Application number
TW096115019A
Other languages
English (en)
Inventor
Stephen J Hudgens
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of TW200802371A publication Critical patent/TW200802371A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/229—Timing of a write operation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
TW096115019A 2006-06-06 2007-04-27 Refreshing a phase change memory TW200802371A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/447,821 US20070279975A1 (en) 2006-06-06 2006-06-06 Refreshing a phase change memory

Publications (1)

Publication Number Publication Date
TW200802371A true TW200802371A (en) 2008-01-01

Family

ID=38566938

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096115019A TW200802371A (en) 2006-06-06 2007-04-27 Refreshing a phase change memory
TW102222988U TWM480148U (zh) 2006-06-06 2007-04-27 相變記憶體再新技術

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102222988U TWM480148U (zh) 2006-06-06 2007-04-27 相變記憶體再新技術

Country Status (4)

Country Link
US (1) US20070279975A1 (zh)
CN (1) CN101461010A (zh)
TW (2) TW200802371A (zh)
WO (1) WO2007145710A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423259B (zh) * 2009-07-15 2014-01-11 Macronix Int Co Ltd 用於相變記憶體的更新電路
TWI617061B (zh) * 2015-03-13 2018-03-01 Toshiba Memory Corp Memory device

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US7679980B2 (en) * 2006-11-21 2010-03-16 Qimonda North America Corp. Resistive memory including selective refresh operation
KR101071705B1 (ko) 2007-12-28 2011-10-11 한국과학기술연구원 쓰기/지우기 내구성 특성이 향상된 상변화 메모리 장치 및 그 프로그래밍 방법
US8199556B2 (en) 2009-09-22 2012-06-12 Micron Technology, Inc. Methods of reading and using memory cells
CN103093816B (zh) * 2013-01-29 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 相变存储器驱动电路及置位和复位方法
KR102178832B1 (ko) 2014-07-22 2020-11-13 삼성전자 주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법
KR20180024556A (ko) * 2016-08-30 2018-03-08 에스케이하이닉스 주식회사 드리프트 특성을 개선할 수 있는 상변화 메모리 시스템
KR102295524B1 (ko) * 2017-03-27 2021-08-30 삼성전자 주식회사 메모리 소자

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JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
JP3774500B2 (ja) * 1995-05-12 2006-05-17 株式会社ルネサステクノロジ 半導体記憶装置
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6646902B2 (en) * 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6560155B1 (en) * 2001-10-24 2003-05-06 Micron Technology, Inc. System and method for power saving memory refresh for dynamic random access memory devices after an extended interval
US6768665B2 (en) * 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
US6961277B2 (en) * 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
EP1526548A1 (en) * 2003-10-22 2005-04-27 STMicroelectronics S.r.l. Improved bit line discharge method and circuit for a semiconductor memory
JP4322645B2 (ja) * 2003-11-28 2009-09-02 株式会社日立製作所 半導体集積回路装置
DE102004041191A1 (de) * 2004-08-25 2006-03-02 Infineon Technologies Ag Neue Materialien für elektrische Phasenwechselspeicher
US20060056251A1 (en) * 2004-09-10 2006-03-16 Parkinson Ward D Using a phase change memory as a replacement for a dynamic random access memory
JP4282612B2 (ja) * 2005-01-19 2009-06-24 エルピーダメモリ株式会社 メモリ装置及びそのリフレッシュ方法
EP1717817B8 (en) * 2005-04-29 2016-05-18 Micron Technology, Inc. A semiconductor memory device with information loss self-detect capability
US7221579B2 (en) * 2005-06-13 2007-05-22 International Business Machines Corporation Method and structure for high performance phase change memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423259B (zh) * 2009-07-15 2014-01-11 Macronix Int Co Ltd 用於相變記憶體的更新電路
TWI617061B (zh) * 2015-03-13 2018-03-01 Toshiba Memory Corp Memory device

Also Published As

Publication number Publication date
WO2007145710A1 (en) 2007-12-21
TWM480148U (zh) 2014-06-11
US20070279975A1 (en) 2007-12-06
CN101461010A (zh) 2009-06-17

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