TW200801793A - Half-tone type phase-shifting mask and method for manufacturing the same - Google Patents

Half-tone type phase-shifting mask and method for manufacturing the same

Info

Publication number
TW200801793A
TW200801793A TW096110168A TW96110168A TW200801793A TW 200801793 A TW200801793 A TW 200801793A TW 096110168 A TW096110168 A TW 096110168A TW 96110168 A TW96110168 A TW 96110168A TW 200801793 A TW200801793 A TW 200801793A
Authority
TW
Taiwan
Prior art keywords
light
shielding pattern
semi
type phase
manufacturing
Prior art date
Application number
TW096110168A
Other languages
English (en)
Other versions
TWI334963B (zh
Inventor
Koji Murano
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200801793A publication Critical patent/TW200801793A/zh
Application granted granted Critical
Publication of TWI334963B publication Critical patent/TWI334963B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096110168A 2006-04-07 2007-03-23 Half-tone type phase-shifting mask and method for manufacturing the same TW200801793A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006106550A JP2007279440A (ja) 2006-04-07 2006-04-07 ハーフトーン型位相シフトマスク及びその製造方法

Publications (2)

Publication Number Publication Date
TW200801793A true TW200801793A (en) 2008-01-01
TWI334963B TWI334963B (zh) 2010-12-21

Family

ID=38575705

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110168A TW200801793A (en) 2006-04-07 2007-03-23 Half-tone type phase-shifting mask and method for manufacturing the same

Country Status (3)

Country Link
US (1) US7759025B2 (zh)
JP (1) JP2007279440A (zh)
TW (1) TW200801793A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553398B (zh) * 2010-12-24 2016-10-11 Hoya Corp A mask substrate, a manufacturing method thereof, a transfer mask, and a method of manufacturing the same
TWI556056B (zh) * 2013-08-30 2016-11-01 Ｈｏｙａ股份有限公司 顯示裝置製造用光罩、該光罩之製造方法、圖案轉印方法及顯示裝置之製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008003520A (ja) * 2006-06-26 2008-01-10 Toshiba Corp フォトマスク及び半導体装置の製造方法
JP4858025B2 (ja) * 2006-09-08 2012-01-18 大日本印刷株式会社 階調マスク
JP5044262B2 (ja) * 2007-04-10 2012-10-10 株式会社エスケーエレクトロニクス 多階調フォトマスク及びその製造方法
US7961292B2 (en) * 2007-05-07 2011-06-14 Micron Technology, Inc. Sub-resolution assist devices and methods
US7790338B2 (en) * 2007-05-16 2010-09-07 Micron Technology, Inc. Optical compensation devices, systems, and methods
JP5172316B2 (ja) * 2007-12-19 2013-03-27 株式会社東芝 フォトマスク、フォトマスクの線幅補正方法、線幅補正装置
JP5215019B2 (ja) * 2008-03-28 2013-06-19 Ｈｏｙａ株式会社 多階調フォトマスク及びその製造方法、並びにパターン転写方法
KR101420907B1 (ko) * 2009-02-16 2014-07-17 다이니폰 인사츠 가부시키가이샤 포토마스크, 포토마스크의 제조 방법 및 수정 방법
KR20100138381A (ko) * 2009-06-25 2010-12-31 엘지이노텍 주식회사 하프톤 마스크의 제조 방법
KR101656456B1 (ko) * 2009-10-30 2016-09-12 삼성전자주식회사 하프톤형 위상반전 블랭크 포토마스크와 하프톤형 위상반전 포토마스크 및 그의 제조방법
US9733574B2 (en) * 2013-10-17 2017-08-15 Cypress Semiconductor Corporation Multiple phase-shift photomask and semiconductor manufacturing method
US10908494B2 (en) * 2017-05-31 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and manufacturing method thereof
CN110148606B (zh) * 2018-04-18 2021-03-02 友达光电股份有限公司 显示面板及其制造方法
JP7461206B2 (ja) * 2020-04-28 2024-04-03 株式会社エスケーエレクトロニクス フォトマスクの製造方法

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JP2701242B2 (ja) * 1989-07-31 1998-01-21 国際電気株式会社 プラズマｃｖｄ装置用電極構造
JPH0720427Y2 (ja) * 1990-01-11 1995-05-15 豊生ブレーキ工業株式会社 シュー間隙自動調節機構を備えたドラムブレーキ
JPH06118614A (ja) 1992-10-05 1994-04-28 Seiko Epson Corp 位相シフトマスク及びマスクパターン発生方法及びマスクパターン発生装置及び位相シフトマスクの製造方法
JP3411613B2 (ja) * 1993-03-26 2003-06-03 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスク
JP3339649B2 (ja) 1993-07-30 2002-10-28 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク用ブランクスの製造方法、及び、ハーフトーン位相シフトフォトマスクの製造方法
JPH0943830A (ja) * 1995-08-03 1997-02-14 Hoya Corp ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク並びにそれらの製造方法
KR970048985A (ko) * 1995-12-26 1997-07-29 김광호 더미 패턴을 가지는 하프톤형 위상 반전 마스크 및 그 제조 방법
JP3065063B1 (ja) * 1999-02-10 2000-07-12 株式会社半導体先端テクノロジーズ パタ―ン形成方法及び位相シフトマスク
JP4654487B2 (ja) * 2000-05-26 2011-03-23 凸版印刷株式会社 位相シフトマスクの製造方法
JP3722029B2 (ja) * 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
JP2002189280A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP2002278040A (ja) 2001-03-16 2002-09-27 Matsushita Electric Ind Co Ltd ハーフトーン型位相シフトマスク及びホールパターン形成方法
JP2004085612A (ja) * 2002-08-22 2004-03-18 Matsushita Electric Ind Co Ltd ハーフトーン位相シフトマスク、その製造方法およびそれを用いたパターン形成方法
DE10310137B4 (de) * 2003-03-07 2010-08-19 Qimonda Ag Satz von wenigstens zwei Masken zur Projektion von jeweils auf den Masken gebildeten und aufeinander abgestimmten Strukturmustern und Verfahren zur Herstellung der Masken
JP4419464B2 (ja) * 2003-07-22 2010-02-24 凸版印刷株式会社 ハーフトーン型位相シフトマスクの製造方法
KR100549268B1 (ko) 2003-12-31 2006-02-03 동부아남반도체 주식회사 위상반전 마스크 및 그 제조방법
JP3828119B2 (ja) * 2004-04-19 2006-10-04 大日本印刷株式会社 ハーフトーン位相シフトマスクの製造方法
JP2006048033A (ja) * 2004-07-09 2006-02-16 Hoya Corp フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553398B (zh) * 2010-12-24 2016-10-11 Hoya Corp A mask substrate, a manufacturing method thereof, a transfer mask, and a method of manufacturing the same
TWI556056B (zh) * 2013-08-30 2016-11-01 Ｈｏｙａ股份有限公司 顯示裝置製造用光罩、該光罩之製造方法、圖案轉印方法及顯示裝置之製造方法
TWI600964B (zh) * 2013-08-30 2017-10-01 Ｈｏｙａ股份有限公司 顯示裝置製造用光罩、該光罩之製造方法及顯示裝置之製造方法

Also Published As

Publication number Publication date
US7759025B2 (en) 2010-07-20
JP2007279440A (ja) 2007-10-25
US20070238032A1 (en) 2007-10-11
TWI334963B (zh) 2010-12-21

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees