WO2016065816A1 - 一种掩模板 - Google Patents

一种掩模板 Download PDF

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Publication number
WO2016065816A1
WO2016065816A1 PCT/CN2015/074735 CN2015074735W WO2016065816A1 WO 2016065816 A1 WO2016065816 A1 WO 2016065816A1 CN 2015074735 W CN2015074735 W CN 2015074735W WO 2016065816 A1 WO2016065816 A1 WO 2016065816A1
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film layer
layer
mask according
transparent substrate
matte film
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PCT/CN2015/074735
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English (en)
French (fr)
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王德帅
王亮
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京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Priority to US14/769,766 priority Critical patent/US9766537B2/en
Publication of WO2016065816A1 publication Critical patent/WO2016065816A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Definitions

  • the present invention relates to the field of lithography, and in particular, to a mask.
  • FIG. 1 is a schematic view showing an exposure process of a conventional large-area semi-transmissive reticle.
  • the large-area semi-transmissive mask includes an opaque region A, a semi-transmissive region B, and a fully transparent region C that are blocked by metal Cr.
  • the bottom layer is formed to a different thickness of the photoresist 5 after exposure through a conventional semipermeable membrane mask.
  • FIG. 2 is a schematic view showing the distribution of the photoresist after development of the substrate shown in FIG. 1.
  • FIG. As shown in the figure, the unexposed photoresist 5 corresponding to the opaque region A has a thickness D, and the semi-transmissive region B is exposed to a photoresist 5 having a thickness d, 60 being a via formed by the fully transparent region C.
  • the photoresist 5 around the via 60 is formed as a photoresist 5 corresponding to the semi-transmissive region.
  • the region of the photoresist 5 where the via 60 is to be formed is affected by the intensity of the ultraviolet light 3 in its peripheral region, resulting in a large influence on the size of the finally formed via 60. Since the intensity of the ultraviolet light 3 in the peripheral region of the via 60 directly causes the thickness of the photoresist 5 around the via 60 to vary, the size of the via 60 appears to be greatly affected by the thickness variation of the photoresist 5 around the via 60.
  • the present invention provides a mask in which the size of a via formed by exposure of the mask is less affected by variations in thickness of the photoresist around the via.
  • the present invention provides the following technical solutions:
  • a mask comprising a transparent substrate, a semipermeable membrane layer and a light blocking layer are disposed on the transparent substrate to form an opaque region, a semi-transmissive region and a fully transparent region, wherein the transparent substrate is further located
  • the matte film layer around the all-transmissive region is configured to weaken the intensity of ultraviolet light transmitted through the periphery of the all-transmissive region.
  • the matte film layer located around the entire transparent region can weaken the intensity of the ultraviolet light transmitted through the periphery of the entire light-transmitting region, that is, the matte film layer can make the ultraviolet light received by the periphery of the substrate to be formed.
  • the light intensity is weakened. Therefore, the via hole formed after development is reduced by the intensity of the ultraviolet light in the peripheral region thereof, and at the same time, the light in the peripheral region of the via hole.
  • the thickness variation of the engraved adhesive is reduced, and therefore, the size of the via hole is reduced by the thickness variation of the photoresist around the via hole.
  • the size of the via hole formed by exposure and development of the above-described mask is less affected by the thickness variation of the photoresist around the via. This applies in particular to large area semi-transmissive reticle exposure processes.
  • the matte film layer is located on a side of the semipermeable membrane layer facing away from the transparent substrate.
  • the matte film layer is attached to the semipermeable membrane layer by an adhesive layer.
  • the matte film layer is located between the transparent substrate and the semipermeable membrane layer.
  • the matte film layer is an inverse film for retarding the phase of ultraviolet light transmitted through the thickness direction by a half wavelength.
  • the matte film layer is a half wave plate.
  • the matte film layer is a light shielding layer.
  • the light shielding layer is a metal chromium film layer.
  • the matte film layer is a closed annular structure.
  • the spacing between the inner side and the outer side of the annular matte film layer is 1 to 2 um in a direction parallel to the transparent substrate.
  • FIG. 1 is a schematic view showing an exposure process of a conventional large-area semi-transmissive reticle
  • FIG. 2 is a schematic view showing the distribution of the photoresist after the substrate shown in FIG. 1 is developed;
  • FIG. 3 is a schematic structural diagram of a mask according to an embodiment of the present invention.
  • FIG. 4 is a schematic view showing an exposure process of the mask shown in FIG. 3;
  • FIG. 5 is a schematic view showing the distribution of the photoresist after the substrate shown in FIG. 4 is developed
  • FIG. 6 is a schematic structural diagram of another mask provided by an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a matte film layer of a mask according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a mask according to an embodiment of the present invention.
  • the embodiment of the present invention provides a mask 1 including a transparent substrate 8, and a transparent film layer 7 and a light blocking layer 9 are disposed on the transparent substrate 8 to form an opaque area A and a semi-transparent area.
  • the light-emitting area B and the all-light-transmissive area C are further provided with a matte film layer 4 on the periphery of the all-transmissive area C to weaken the ultraviolet light transmitted through the periphery of the all-transmissive area C. Strength of.
  • FIG. 4 is a schematic view showing the exposure process of the mask shown in FIG. 3, and FIG. 5 is a schematic view showing the distribution of the photoresist after the substrate shown in FIG.
  • the matte film layer 4 located around the entire light-transmitting region C can attenuate the intensity of the ultraviolet light 3 transmitted around the entire light-transmitting region C, that is, the matte film layer 4
  • the intensity of the ultraviolet light 3 received by the periphery of the substrate 2 to be formed through the via hole 6 can be weakened.
  • the via hole 6 formed after development is reduced by the intensity of the ultraviolet light 3 in the peripheral region thereof, and at the same time, the thickness variation of the photoresist 5 in the peripheral region of the via hole 6 is reduced, so that the size of the via hole 6 is affected by the via hole. The influence of the thickness variation of the peripheral photoresist 5 is reduced.
  • the size of the via hole 6 formed by the exposure and development of the above-described mask 1 is less affected by the thickness variation of the photoresist 5 around the via 6.
  • the matte film layer 4 may be located on the side of the semipermeable membrane layer 7 facing away from the transparent substrate 8.
  • the matte film layer 4 may also be located between the transparent substrate 8 and the semipermeable membrane layer 7.
  • the intensity of the ultraviolet light 3 transmitted through the periphery of the all-transmissive region C can be weakened, and the specificity of the matte film layer 4 on the mask 1 can be The location can be unlimited.
  • the matte film layer 4 may be an inverse film for retarding the phase of the ultraviolet light 3 transmitted through the thickness direction thereof by a half wavelength. After the ultraviolet light 3 passes through the reverse phase film around the via hole 6, the phase changes by 180 degrees, which is opposite to the phase of the ultraviolet light 3 passing through other regions than the reverse phase film. Therefore, the ultraviolet light 3 passing through the reverse phase film and the ultraviolet light 3 in other regions are canceled by the interference, so that the intensity of the ultraviolet light 3 passing through the reverse phase film can be reduced to zero during the exposure to weaken the total light transmission.
  • the matte film layer 4 may be a half wave plate. In the case where the matte film layer 4 is located on the side of the semipermeable membrane layer 7 facing away from the transparent substrate 8, the matte film layer 4 may be attached to the semipermeable membrane layer 7 through the adhesive layer.
  • the matte film layer 4 may be a light shielding layer. Since the light shielding layer is opaque, the intensity of the ultraviolet light 3 passing through the light shielding layer can be reduced during exposure and development. It is small to zero to weaken the intensity of the ultraviolet light 3 transmitted through the periphery of the entire light-transmitting region 4. However, when the matte film layer 4 is a light-shielding layer, the size of the total light-transmitting region C of the mask 1 must generally be larger than the resolution of the exposure machine to prevent diffraction from occurring. Usually, the resolution of the exposure machine is 4um. Specifically, the light shielding layer may be a metal chromium film layer.
  • FIG. 7 is a schematic structural diagram of a matte film layer of a mask according to an embodiment of the present invention.
  • the matte film layer 4 located around the entire light-transmissive region C may be a closed loop structure.
  • the distance e between the inner side and the outer side of the annular matte film layer 4 may be 1 to 2 um in a direction parallel to the transparent substrate 8.
  • the matte film layer 4 may have other shapes depending on the shape of the pattern to be formed on the substrate 2.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

公开一种掩模板(1)，该掩模板(1)包括透明基板(8)，所述透明基板(8)上设有半透膜层(7)和挡光层(9)以形成不透光区域A、半透光区域B和全透光区域C，所述透明基板(8)上还设有位于所述全透光区域C周边的消光膜层(4)，以减弱所述全透光区域C周边透过的紫外光(3)的强度。经过该掩模板曝光形成的过孔的大小受过孔周边的光刻胶的厚度变化影响小。

Description

一种掩模板 技术领域
本发明涉及光刻技术领域，特别涉及一种掩模板。
背景技术
图1为现有大面积半透过掩模板曝光过程示意图。如图所示，大面积半透过掩模板包括金属Cr遮挡的不透光区域A、半透光区域B、全透光区域C。通过常规半透膜掩模板曝光后底层形成不同光刻胶5厚度。
图2为图1中所示的基板显影后的光刻胶分布示意图。如图所示，不透光区域A对应的未进行曝光的光刻胶5厚度为D，半透光区域B曝光的光刻胶5厚度为d，60为全透光区域C形成的过孔图形。
基板曝光显影后，形成的过孔60周边的光刻胶5为半透光区域对应的光刻胶5。曝光时，待形成过孔60的光刻胶5区域会受到其周边区域的紫外光3强度的影响，导致最终形成的过孔60大小受到很大影响。由于过孔60周边区域的紫外光3强度直接导致过孔60周边的光刻胶5厚度变化，所以过孔60的大小表现为受过孔60周边的光刻胶5的厚度变化影响大。
发明内容
本发明提供了一种掩模板，通过该掩模板曝光形成的过孔的大小受过孔周边的光刻胶的厚度变化影响小。
为达到上述目的，本发明提供以下技术方案：
一种掩模板，包括透明基板，所述透明基板上设有半透膜层和挡光层以形成不透光区域、半透光区域和全透光区域，所述透明基板上还设有位于所述全透光区域周边的消光膜层，以减弱所述全透光区域周边透过的紫外光的强度。
当紫外光通过上述掩模板时，位于全透光区域周边的消光膜层可以减弱全透光区域周边透过的紫外光的强度，即消光膜层可以使基板待形成过孔的周边受到的紫外光强度减弱。因此，显影后形成的过孔受到其周边区域的紫外光强度的影响减小，同时，过孔周边区域的光 刻胶厚度变化减小，因此，表现为过孔的大小受到过孔周边的光刻胶的厚度变化影响减小。
因此，通过上述掩模板曝光显影形成的过孔的大小受过孔周边的光刻胶的厚度变化影响小。这尤其适用于大面积半透过掩模板曝光过程。
可选地，所述消光膜层位于所述半透膜层背离所述透明基板的一侧。
可选地，所述消光膜层通过粘结层贴附于所述半透膜层上。
可选地，所述消光膜层位于所述透明基板与所述半透膜层之间。
可选地，所述消光膜层为用于将透过其厚度方向的紫外光的相位延迟半个波长的反相膜。
可选地，所述消光膜层为二分之一波片。
可选地，所述消光膜层为遮光层。
可选地，所述遮光层为金属铬膜层。
可选地，所述消光膜层为封闭环形结构。
可选地，沿平行于透明基板的方向，所述环形消光膜层的内侧边与外侧边之间的间距为1～2um。
附图说明
图1为现有大面积半透过掩模板的曝光过程示意图；
图2为图1中所示的基板显影后的光刻胶分布示意图；
图3为本发明实施例提供的一种掩模板的结构示意图；
图4为图3中所示掩模板的曝光过程示意图；
图5为图4中所示的基板显影后的光刻胶分布示意图；
图6为本发明实施例提供的另一种掩模板的结构示意图；
图7为本发明实施例提供的一种掩模板的消光膜层结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例， 都属于本发明保护的范围。
图3为本发明实施例提供的一种掩模板的结构示意图。如图所示，本发明实施例提供了一种掩模板1，包括透明基板8，所述透明基板8上设有半透膜层7和挡光层9以形成不透光区域A、半透光区域B和全透光区域C，所述透明基板8上还设有位于所述全透光区域C周边的消光膜层4，以减弱所述全透光区域C周边透过的紫外光3的强度。
图4为图3中所示掩模板的曝光过程示意图，并且图5为图4中所示的基板显影后的光刻胶分布示意图。如图所示，当紫外光3通过上述掩模板1时，位于全透光区域C周边的消光膜层4可以减弱全透光区域C周边透过的紫外光3的强度，即消光膜层4可以使基板2待形成过孔6的周边受到的紫外光3强度减弱。因此，显影后形成的过孔6受到其周边区域的紫外光3强度的影响减小，同时，过孔6周边区域的光刻胶5厚度变化减小，从而使得过孔6的大小受到过孔6周边的光刻胶5的厚度变化影响减小。
因此，通过上述掩模板1曝光显影形成的过孔6的大小受过孔6周边的光刻胶5的厚度变化影响小。
如图3所示，消光膜层4可以位于半透膜层7背离透明基板8的一侧。可选地，如图6所示，消光膜层4也可以位于透明基板8与半透膜层7之间。实际上，只要消光膜层4设于全透光区域C周边，能够减弱所述全透光区域C周边透过的紫外光3的强度即可，对于消光膜层4在掩模板1上的具体位置可以不作限定。
在一个实施例中，消光膜层4可以为用于将透过其厚度方向的紫外光3的相位延迟半个波长的反相膜。紫外光3穿过过孔6周边的反相膜后，相位变化了180度，与穿过反相膜之外的其它区域的紫外光3的相位相反。因此，通过反相膜的紫外光3与其他区域的紫外光3由于干涉相抵消，从而在曝光过程中，通过反相膜的紫外光3强度可以减小为零，以减弱所述全透光区域4周边透过的紫外光3的强度。具体地，消光膜层4可以为二分之一波片。在消光膜层4位于半透膜层7背离透明基板8的一侧的情况下，消光膜层4可以通过粘结层贴附于半透膜层7上。
在另一个实施例中，消光膜层4可以为遮光层。由于遮光层不透光，因此，在曝光显影过程中，通过遮光层的紫外光3的强度可以减 小为零，以减弱全透光区域4周边透过的紫外光3的强度。但是，当消光膜层4为遮光层时，掩模板1的全透光区域C的大小通常必须大于曝光机的分辨率，以防止发生衍射现象。通常，曝光机的分辨率为4um。具体地，遮光层可以为金属铬膜层。
图7为本发明实施例提供的一种掩模板的消光膜层结构示意图。如图所示，位于全透光区域C周边的消光膜层4可以为封闭环形结构。具体地，沿平行于透明基板8的方向，环形消光膜层4的内侧边与外侧边之间的间距e可以为1～2um。当然，根据基板2上要形成的图形的形状，消光膜层4还可以为其他形状。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

  1. 一种掩模板，包括透明基板，其中，所述透明基板上设有半透膜层和挡光层以形成不透光区域、半透光区域和全透光区域，所述透明基板上还设有位于所述全透光区域周边的消光膜层，以减弱所述全透光区域周边透过的紫外光的强度。
  2. 根据权利要求1所述的掩模板，其中，所述消光膜层位于所述半透膜层背离所述透明基板的一侧。
  3. 根据权利要求2所述的掩模板，其中，所述消光膜层通过粘结层贴附于所述半透膜层上。
  4. 根据权利要求1所述的掩模板，其中，所述消光膜层位于所述透明基板与所述半透膜层之间。
  5. 根据权利要求1所述的掩模板，其中，所述消光膜层为用于将透过其厚度方向的紫外光的相位延迟半个波长的反相膜。
  6. 根据权利要求5所述的掩模板，其中，所述消光膜层为二分之一波片。
  7. 根据权利要求1所述的掩模板，其中，所述消光膜层为遮光层。
  8. 根据权利要求7所述的掩模板，其中，所述遮光层为金属铬膜层。
  9. 根据权利要求1～8任一项所述的掩模板，其中，所述消光膜层为封闭环形结构。
  10. 根据权利要求9所述的掩模板，其中，沿平行于所述透明基板的方向，所述环形的消光膜层的内侧边与外侧边之间的间距为1～2um。
PCT/CN2015/074735 2014-10-28 2015-04-14 一种掩模板 WO2016065816A1 (zh)

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CN104407496A (zh) 2014-10-28 2015-03-11 京东方科技集团股份有限公司 一种掩模板
CN104865791B (zh) * 2015-04-17 2019-08-30 京东方科技集团股份有限公司 掩膜板的制备方法和掩膜板
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