TW200745772A - Exposure apparatus and device manufacturing method - Google Patents

Exposure apparatus and device manufacturing method

Info

Publication number
TW200745772A
TW200745772A TW096105986A TW96105986A TW200745772A TW 200745772 A TW200745772 A TW 200745772A TW 096105986 A TW096105986 A TW 096105986A TW 96105986 A TW96105986 A TW 96105986A TW 200745772 A TW200745772 A TW 200745772A
Authority
TW
Taiwan
Prior art keywords
polarization
reticle
exposure apparatus
adjuster
illuminate
Prior art date
Application number
TW096105986A
Other languages
English (en)
Chinese (zh)
Inventor
Seiji Takeuchi
Kenji Yamazoe
Yumiko Ohsaki
Minoyu Yoshii
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200745772A publication Critical patent/TW200745772A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096105986A 2006-02-15 2007-02-15 Exposure apparatus and device manufacturing method TW200745772A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006037422A JP2007220767A (ja) 2006-02-15 2006-02-15 露光装置及びデバイス製造方法

Publications (1)

Publication Number Publication Date
TW200745772A true TW200745772A (en) 2007-12-16

Family

ID=38171301

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105986A TW200745772A (en) 2006-02-15 2007-02-15 Exposure apparatus and device manufacturing method

Country Status (5)

Country Link
US (1) US7508493B2 (https=)
EP (1) EP1821149A3 (https=)
JP (1) JP2007220767A (https=)
KR (1) KR100856976B1 (https=)
TW (1) TW200745772A (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI609410B (zh) * 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
JP2008108851A (ja) * 2006-10-24 2008-05-08 Canon Inc 照明装置及び当該照明装置を有する露光装置、並びに、デバイス製造方法
US7952685B2 (en) * 2007-03-15 2011-05-31 Carl Zeiss Smt Ag Illuminator for a lithographic apparatus and method
WO2008119794A1 (en) * 2007-04-03 2008-10-09 Carl Zeiss Smt Ag Optical system, in particular illumination device or projection objective of a microlithographic projection exposure apparatus
JP4971932B2 (ja) * 2007-10-01 2012-07-11 キヤノン株式会社 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット
NL1036407A1 (nl) * 2008-01-23 2009-07-27 Asml Netherlands Bv Polarization control apparatus and method.
JP2009206373A (ja) * 2008-02-28 2009-09-10 Canon Inc 露光装置及びデバイス製造方法
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
WO2009152867A1 (en) 2008-06-20 2009-12-23 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus and microlithographic exposure method
DE102008040611A1 (de) * 2008-07-22 2010-01-28 Carl Zeiss Smt Ag Verfahren zum Modifizieren einer Polarisationsverteilung in einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographische Projektionsbelichtungsanlage
WO2010021148A1 (ja) * 2008-08-20 2010-02-25 国立大学法人東北大学 形状・傾斜検知及び／又は計測光学装置及び方法並びにその関連装置
JP2011014707A (ja) * 2009-07-01 2011-01-20 Canon Inc 露光装置およびデバイス製造方法
DE102011003035A1 (de) * 2010-02-08 2011-08-11 Carl Zeiss SMT GmbH, 73447 Polarisationsbeeinflussende optische Anordnung, sowie optisches System einer mikrolithographischen Projektionsbelichtungsanlage
NL2005958A (en) * 2010-02-09 2011-08-10 Asml Netherlands Bv Lithographic method and apparatus.
DE102010029905A1 (de) 2010-06-10 2011-12-15 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
TWI557432B (zh) 2011-06-13 2016-11-11 尼康股份有限公司 照明方法、曝光方法、元件製造方法、照明光學系統、以及曝光裝置
US9732934B2 (en) 2011-10-28 2017-08-15 Nikon Corporation Illumination device for optimizing polarization in an illumination pupil
DE102012203944A1 (de) * 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
US10133184B2 (en) * 2012-04-25 2018-11-20 Nikon Corporation Using customized lens pupil optimization to enhance lithographic imaging in a source-mask optimization scheme

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100426097B1 (ko) * 2002-04-30 2004-04-06 삼성전자주식회사 포토닉 크리스탈을 이용한 편광변환장치 및 이를 이용한디스플레이장치
JP3689681B2 (ja) 2002-05-10 2005-08-31 キヤノン株式会社 測定装置及びそれを有する装置群
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
US20040248043A1 (en) * 2003-06-03 2004-12-09 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
JP4470095B2 (ja) * 2003-11-20 2010-06-02 株式会社ニコン 照明光学装置、露光装置および露光方法
JP4552428B2 (ja) 2003-12-02 2010-09-29 株式会社ニコン 照明光学装置、投影露光装置、露光方法及びデバイス製造方法
JP4497968B2 (ja) 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
JP4776891B2 (ja) * 2004-04-23 2011-09-21 キヤノン株式会社 照明光学系、露光装置、及びデバイス製造方法
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device

Also Published As

Publication number Publication date
EP1821149A2 (en) 2007-08-22
EP1821149A3 (en) 2009-08-05
US7508493B2 (en) 2009-03-24
KR20070082547A (ko) 2007-08-21
US20070188730A1 (en) 2007-08-16
KR100856976B1 (ko) 2008-09-04
JP2007220767A (ja) 2007-08-30

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