TW200742425A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- TW200742425A TW200742425A TW096109447A TW96109447A TW200742425A TW 200742425 A TW200742425 A TW 200742425A TW 096109447 A TW096109447 A TW 096109447A TW 96109447 A TW96109447 A TW 96109447A TW 200742425 A TW200742425 A TW 200742425A
- Authority
- TW
- Taiwan
- Prior art keywords
- disposed
- disposition region
- microlenses
- solid
- pickup device
- Prior art date
Links
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006083658 | 2006-03-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200742425A true TW200742425A (en) | 2007-11-01 |
Family
ID=38532965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096109447A TW200742425A (en) | 2006-03-24 | 2007-03-20 | Solid-state image pickup device |
Country Status (4)
Country | Link |
---|---|
US (2) | US7859587B2 (zh) |
KR (1) | KR20070096899A (zh) |
CN (1) | CN101043046A (zh) |
TW (1) | TW200742425A (zh) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4992352B2 (ja) * | 2006-09-11 | 2012-08-08 | ソニー株式会社 | 固体撮像装置 |
JP4457326B2 (ja) * | 2007-04-18 | 2010-04-28 | 株式会社 Rosnes | 固体撮像装置 |
JP2008282961A (ja) * | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP5277565B2 (ja) * | 2007-05-31 | 2013-08-28 | 富士通セミコンダクター株式会社 | 固体撮像素子 |
JP5272433B2 (ja) * | 2008-02-15 | 2013-08-28 | 富士通セミコンダクター株式会社 | 画像撮像素子のずらし量算出方法及び装置、画像撮像素子、画像撮像素子内蔵装置 |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8890271B2 (en) * | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
JP5515396B2 (ja) * | 2009-05-08 | 2014-06-11 | ソニー株式会社 | 撮像装置 |
JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5656484B2 (ja) | 2010-07-07 | 2015-01-21 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5697371B2 (ja) | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5421207B2 (ja) * | 2010-08-25 | 2014-02-19 | 株式会社東芝 | 固体撮像装置 |
JP2013069987A (ja) * | 2011-09-26 | 2013-04-18 | Sony Corp | 撮像素子 |
GB2498972A (en) * | 2012-02-01 | 2013-08-07 | St Microelectronics Ltd | Pixel and microlens array |
US20130201388A1 (en) * | 2012-02-03 | 2013-08-08 | Novatek Microelectronics Corp. | Optical sensing apparatus and optical setting method |
JP2015228466A (ja) * | 2014-06-02 | 2015-12-17 | キヤノン株式会社 | 撮像装置及び撮像システム |
CN104183612B (zh) * | 2014-08-01 | 2018-05-01 | 上海集成电路研发中心有限公司 | 一种光路倾斜的cmos图像传感器的像素阵列 |
WO2016103430A1 (ja) * | 2014-12-25 | 2016-06-30 | キヤノン株式会社 | ラインセンサ、画像読取装置、画像形成装置 |
WO2018066348A1 (ja) * | 2016-10-03 | 2018-04-12 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および撮像方法、並びに電子機器 |
CN106488148B (zh) * | 2016-11-01 | 2019-09-17 | 首都师范大学 | 一种超分辨率图像传感器及其构造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3170847B2 (ja) * | 1992-02-14 | 2001-05-28 | キヤノン株式会社 | 固体撮像素子及びそれを用いた光学機器 |
US6455831B1 (en) * | 1998-09-11 | 2002-09-24 | The Research Foundation Of Suny At Buffalo | CMOS foveal image sensor chip |
JP3430071B2 (ja) * | 1999-06-02 | 2003-07-28 | シャープ株式会社 | マスク作製方法 |
JP3853562B2 (ja) | 2000-02-23 | 2006-12-06 | 松下電器産業株式会社 | 増幅型固体撮像装置 |
JP4322166B2 (ja) * | 2003-09-19 | 2009-08-26 | 富士フイルム株式会社 | 固体撮像素子 |
JP4728660B2 (ja) * | 2005-02-23 | 2011-07-20 | 株式会社東芝 | 固体撮像装置およびそれを用いたカメラ装置 |
-
2007
- 2007-03-20 US US11/723,459 patent/US7859587B2/en active Active
- 2007-03-20 TW TW096109447A patent/TW200742425A/zh unknown
- 2007-03-23 CN CNA2007100893815A patent/CN101043046A/zh active Pending
- 2007-03-23 KR KR1020070028636A patent/KR20070096899A/ko not_active Application Discontinuation
-
2010
- 2010-11-17 US US12/948,223 patent/US20110080508A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101043046A (zh) | 2007-09-26 |
KR20070096899A (ko) | 2007-10-02 |
US7859587B2 (en) | 2010-12-28 |
US20110080508A1 (en) | 2011-04-07 |
US20070222885A1 (en) | 2007-09-27 |
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