TW200739886A - Structures and methods for forming SRAM cells with self-aligned contacts - Google Patents

Structures and methods for forming SRAM cells with self-aligned contacts

Info

Publication number
TW200739886A
TW200739886A TW096111688A TW96111688A TW200739886A TW 200739886 A TW200739886 A TW 200739886A TW 096111688 A TW096111688 A TW 096111688A TW 96111688 A TW96111688 A TW 96111688A TW 200739886 A TW200739886 A TW 200739886A
Authority
TW
Taiwan
Prior art keywords
source
self
gate conductor
protective
drain
Prior art date
Application number
TW096111688A
Other languages
English (en)
Inventor
Haining S Yang
Robert C Wong
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200739886A publication Critical patent/TW200739886A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096111688A 2006-04-12 2007-04-02 Structures and methods for forming SRAM cells with self-aligned contacts TW200739886A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/279,413 US20070241411A1 (en) 2006-04-12 2006-04-12 Structures and methods for forming sram cells with self-aligned contacts

Publications (1)

Publication Number Publication Date
TW200739886A true TW200739886A (en) 2007-10-16

Family

ID=38604051

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111688A TW200739886A (en) 2006-04-12 2007-04-02 Structures and methods for forming SRAM cells with self-aligned contacts

Country Status (3)

Country Link
US (1) US20070241411A1 (zh)
CN (1) CN100502013C (zh)
TW (1) TW200739886A (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7869262B2 (en) * 2007-01-29 2011-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device with an asymmetric layout structure
JP2009231443A (ja) * 2008-03-21 2009-10-08 Oki Semiconductor Co Ltd 高耐圧半導体デバイス、及び高耐圧半導体デバイスの製造方法
US8603905B2 (en) * 2008-12-30 2013-12-10 Texas Instruments Incorporated Dual alignment strategy for optimizing contact layer alignment
JP2011138885A (ja) * 2009-12-28 2011-07-14 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8436404B2 (en) 2009-12-30 2013-05-07 Intel Corporation Self-aligned contacts
CN103178019B (zh) * 2011-12-20 2015-04-08 华邦电子股份有限公司 嵌入式闪存的字线的制造方法
US8927407B2 (en) 2012-01-20 2015-01-06 Globalfoundries Inc. Method of forming self-aligned contacts for a semiconductor device
US20130187236A1 (en) * 2012-01-20 2013-07-25 Globalfoundries Inc. Methods of Forming Replacement Gate Structures for Semiconductor Devices
CN103515434B (zh) 2012-06-26 2016-01-06 中芯国际集成电路制造(上海)有限公司 Mos晶体管及其形成方法、sram存储单元电路
CN103515435B (zh) * 2012-06-26 2016-12-21 中芯国际集成电路制造(上海)有限公司 Mos晶体管及其形成方法、sram存储单元电路
US8896030B2 (en) 2012-09-07 2014-11-25 Intel Corporation Integrated circuits with selective gate electrode recess
CN103730468B (zh) 2012-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、sram存储单元、sram存储器
KR20140049356A (ko) * 2012-10-17 2014-04-25 삼성전자주식회사 반도체 소자
US8928048B2 (en) 2013-01-17 2015-01-06 Globalfoundries Inc. Methods of forming semiconductor device with self-aligned contact elements and the resulting device
CN103972152A (zh) * 2013-01-30 2014-08-06 中芯国际集成电路制造(上海)有限公司 钨金属互连线的制作方法
US8940633B2 (en) 2013-03-05 2015-01-27 Globalfoundries Inc. Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
US8946075B2 (en) 2013-03-05 2015-02-03 Globalfoundries Inc. Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
KR102392845B1 (ko) 2017-11-28 2022-04-29 삼성전자주식회사 반도체 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559042B2 (en) * 2001-06-28 2003-05-06 International Business Machines Corporation Process for forming fusible links
US7026689B2 (en) * 2004-08-27 2006-04-11 Taiwan Semiconductor Manufacturing Company Metal gate structure for MOS devices

Also Published As

Publication number Publication date
CN101055873A (zh) 2007-10-17
US20070241411A1 (en) 2007-10-18
CN100502013C (zh) 2009-06-17

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