TW200737311A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
TW200737311A
TW200737311A TW096103017A TW96103017A TW200737311A TW 200737311 A TW200737311 A TW 200737311A TW 096103017 A TW096103017 A TW 096103017A TW 96103017 A TW96103017 A TW 96103017A TW 200737311 A TW200737311 A TW 200737311A
Authority
TW
Taiwan
Prior art keywords
gas
plasma processing
dielectric parts
plasma
porous portions
Prior art date
Application number
TW096103017A
Other languages
English (en)
Inventor
Takahiro Horiguchi
Tadahiro Ohmi
Masaki Hirayama
Original Assignee
Tokyo Electron Ltd
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Univ Tohoku filed Critical Tokyo Electron Ltd
Publication of TW200737311A publication Critical patent/TW200737311A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW096103017A 2006-02-06 2007-01-26 Plasma processing apparatus and plasma processing method TW200737311A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006028849A JP4915985B2 (ja) 2006-02-06 2006-02-06 プラズマ処理装置およびプラズマ処理方法

Publications (1)

Publication Number Publication Date
TW200737311A true TW200737311A (en) 2007-10-01

Family

ID=38332940

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103017A TW200737311A (en) 2006-02-06 2007-01-26 Plasma processing apparatus and plasma processing method

Country Status (5)

Country Link
US (1) US20070181531A1 (zh)
JP (1) JP4915985B2 (zh)
KR (1) KR100847963B1 (zh)
CN (1) CN101017769A (zh)
TW (1) TW200737311A (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080254220A1 (en) * 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
JP2008047869A (ja) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP2008066413A (ja) * 2006-09-05 2008-03-21 Tokyo Electron Ltd シャワーヘッド構造及びこれを用いた処理装置
US7855153B2 (en) * 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009194173A (ja) * 2008-02-14 2009-08-27 Tokyo Electron Ltd マイクロ波プラズマ処理装置
JP5103223B2 (ja) * 2008-02-27 2012-12-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法
JP4590597B2 (ja) * 2008-03-12 2010-12-01 国立大学法人東北大学 シャワープレートの製造方法
CN102177274B (zh) * 2008-10-08 2014-08-06 Abcd技术有限公司 汽相沉积系统
JP2010153483A (ja) * 2008-12-24 2010-07-08 Toyota Motor Corp 成膜装置、及び、成膜方法
JP5202652B2 (ja) * 2009-02-06 2013-06-05 国立大学法人東北大学 プラズマ処理装置
CN102460635B (zh) * 2009-05-06 2014-12-24 3M创新有限公司 对容器进行等离子体处理的装置和方法
TWI430714B (zh) * 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
TW201130401A (en) * 2009-11-23 2011-09-01 Jusung Eng Co Ltd Apparatus for processing substrate
JP5721132B2 (ja) 2009-12-10 2015-05-20 オルボテック エルティ ソラー，エルエルシー 真空処理装置用シャワーヘッド・アセンブリ及び真空処理装置用シャワーヘッド・アセンブリを真空処理チャンバに締結する方法
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
JP6096547B2 (ja) * 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
CN104681387B (zh) * 2013-11-29 2017-06-20 细美事有限公司 基板支撑单元及包含该基板支撑单元的基板处理装置
CN108140550B (zh) * 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
KR101816746B1 (ko) 2016-06-22 2018-02-22 주식회사 티원 구조체 및 이의 제조 방법
JP6696322B2 (ja) * 2016-06-24 2020-05-20 東京エレクトロン株式会社 ガス処理装置、ガス処理方法及び記憶媒体
KR102420164B1 (ko) 2017-09-14 2022-07-12 삼성전자주식회사 기체의 유동 시뮬레이션을 수행하기 위한 컴퓨팅 시스템 및 시뮬레이션 방법
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN113818005A (zh) * 2020-06-19 2021-12-21 拓荆科技股份有限公司 一种薄膜制备设备及方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244323A (ja) * 1988-08-05 1990-02-14 Olympus Optical Co Ltd カメラ
JP3076414B2 (ja) * 1991-07-26 2000-08-14 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による堆積膜形成装置
US5702761A (en) * 1994-04-29 1997-12-30 Mcdonnell Douglas Corporation Surface protection of porous ceramic bodies
US6086710A (en) * 1995-04-07 2000-07-11 Seiko Epson Corporation Surface treatment apparatus
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
JP2000150472A (ja) * 1998-11-10 2000-05-30 Hitachi Ltd プラズマ処理装置
WO2000074127A1 (fr) * 1999-05-26 2000-12-07 Tokyo Electron Limited Dispositif de traitement au plasma
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
US6367412B1 (en) * 2000-02-17 2002-04-09 Applied Materials, Inc. Porous ceramic liner for a plasma source
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP2002299240A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
US6682627B2 (en) * 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
US6656535B2 (en) * 2001-12-21 2003-12-02 Applied Materials, Inc Method of fabricating a coated process chamber component
EP2249413A3 (en) * 2002-04-01 2011-02-02 Konica Corporation Support and organic electroluminescence element comprising the support
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP4540926B2 (ja) * 2002-07-05 2010-09-08 忠弘 大見 プラズマ処理装置
JP2004228426A (ja) * 2003-01-24 2004-08-12 Mitsubishi Materials Corp プラズマ処理装置用シャワープレートおよびその製造方法
JP4381001B2 (ja) * 2003-02-25 2009-12-09 シャープ株式会社 プラズマプロセス装置
JP2004319870A (ja) * 2003-04-18 2004-11-11 Advanced Lcd Technologies Development Center Co Ltd プラズマ処理装置
JP2006004686A (ja) * 2004-06-16 2006-01-05 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置

Also Published As

Publication number Publication date
KR100847963B1 (ko) 2008-07-22
US20070181531A1 (en) 2007-08-09
CN101017769A (zh) 2007-08-15
JP2007208208A (ja) 2007-08-16
JP4915985B2 (ja) 2012-04-11
KR20070080232A (ko) 2007-08-09

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