TW200735207A - Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus - Google Patents

Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus

Info

Publication number
TW200735207A
TW200735207A TW095131150A TW95131150A TW200735207A TW 200735207 A TW200735207 A TW 200735207A TW 095131150 A TW095131150 A TW 095131150A TW 95131150 A TW95131150 A TW 95131150A TW 200735207 A TW200735207 A TW 200735207A
Authority
TW
Taiwan
Prior art keywords
sample
electrostatic chuck
etching apparatus
bias voltage
rear surface
Prior art date
Application number
TW095131150A
Other languages
English (en)
Other versions
TWI323916B (zh
Inventor
Shoji Ikuhara
Hideyuki Yamamoto
Daisuke Shiraishi
Akira Kagoshima
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW200735207A publication Critical patent/TW200735207A/zh
Application granted granted Critical
Publication of TWI323916B publication Critical patent/TWI323916B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW095131150A 2006-03-01 2006-08-24 Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus TW200735207A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006054913A JP4657949B2 (ja) 2006-03-01 2006-03-01 エッチング処理装置および自己バイアス電圧測定方法ならびにエッチング処理装置の監視方法

Publications (2)

Publication Number Publication Date
TW200735207A true TW200735207A (en) 2007-09-16
TWI323916B TWI323916B (zh) 2010-04-21

Family

ID=38517562

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131150A TW200735207A (en) 2006-03-01 2006-08-24 Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus

Country Status (4)

Country Link
US (1) US7330346B2 (zh)
JP (1) JP4657949B2 (zh)
KR (1) KR100833680B1 (zh)
TW (1) TW200735207A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767568A (zh) * 2018-07-26 2020-02-07 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
TWI825247B (zh) * 2018-12-28 2023-12-11 日商東京威力科創股份有限公司 測定方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
JP5372419B2 (ja) * 2008-06-25 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
WO2010132640A2 (en) 2009-05-15 2010-11-18 Entegris, Inc. Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8909365B2 (en) * 2009-11-19 2014-12-09 Lam Research Corporation Methods and apparatus for controlling a plasma processing system
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
US9530626B2 (en) * 2014-07-25 2016-12-27 Tokyo Electron Limited Method and apparatus for ESC charge control for wafer clamping
JP6650593B2 (ja) * 2017-02-17 2020-02-19 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP7054642B2 (ja) * 2018-04-06 2022-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6886940B2 (ja) * 2018-04-23 2021-06-16 東京エレクトロン株式会社 プラズマ処理方法
CN110416144B (zh) * 2018-04-27 2020-11-10 北京北方华创微电子装备有限公司 静电卡盘、工艺腔室和半导体处理设备
KR102223759B1 (ko) * 2018-06-07 2021-03-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7209247B2 (ja) * 2018-09-25 2023-01-20 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206546A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd プラズマ処理方法および装置
KR0164618B1 (ko) * 1992-02-13 1999-02-01 이노우에 쥰이치 플라즈마 처리방법
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JPH07263412A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JPH10154697A (ja) * 1996-11-25 1998-06-09 Fujitsu Ltd プラズマ処理装置及びその管理方法
JP3792865B2 (ja) * 1997-10-30 2006-07-05 松下電器産業株式会社 半導体装置の製造装置およびドライエッチング方法
JPH11260897A (ja) * 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd 基板の取り扱い方法と装置、それに用いる吸着検査方法、装置
JP3296292B2 (ja) * 1998-06-26 2002-06-24 松下電器産業株式会社 エッチング方法、クリーニング方法、及びプラズマ処理装置
JP2000049216A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp プラズマ処理装置および当該装置で用いられる静電チャック吸着方法
JP3635463B2 (ja) * 2001-11-27 2005-04-06 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
JP2004047511A (ja) * 2002-07-08 2004-02-12 Tokyo Electron Ltd 離脱方法、処理方法、静電吸着装置および処理装置
JP2005072521A (ja) * 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767568A (zh) * 2018-07-26 2020-02-07 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
TWI825247B (zh) * 2018-12-28 2023-12-11 日商東京威力科創股份有限公司 測定方法

Also Published As

Publication number Publication date
US20070217118A1 (en) 2007-09-20
JP4657949B2 (ja) 2011-03-23
JP2007234869A (ja) 2007-09-13
KR100833680B1 (ko) 2008-05-29
TWI323916B (zh) 2010-04-21
US7330346B2 (en) 2008-02-12
KR20070090061A (ko) 2007-09-05

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees