TW200735190A - Thin film transistor substrate and display device - Google Patents

Thin film transistor substrate and display device

Info

Publication number
TW200735190A
TW200735190A TW095144423A TW95144423A TW200735190A TW 200735190 A TW200735190 A TW 200735190A TW 095144423 A TW095144423 A TW 095144423A TW 95144423 A TW95144423 A TW 95144423A TW 200735190 A TW200735190 A TW 200735190A
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
transistor substrate
wiring
source
Prior art date
Application number
TW095144423A
Other languages
English (en)
Inventor
Hiroshi Gotoh
Toshihiro Kugimiya
Katsufumi Tomihisa
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of TW200735190A publication Critical patent/TW200735190A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
TW095144423A 2005-12-02 2006-11-30 Thin film transistor substrate and display device TW200735190A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005349378A JP4117002B2 (ja) 2005-12-02 2005-12-02 薄膜トランジスタ基板および表示デバイス

Publications (1)

Publication Number Publication Date
TW200735190A true TW200735190A (en) 2007-09-16

Family

ID=38092323

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144423A TW200735190A (en) 2005-12-02 2006-11-30 Thin film transistor substrate and display device

Country Status (6)

Country Link
US (1) US7952123B2 (zh)
JP (1) JP4117002B2 (zh)
KR (1) KR100983196B1 (zh)
CN (1) CN101253447B (zh)
TW (1) TW200735190A (zh)
WO (1) WO2007063991A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010053A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置およびスパッタリングターゲット
JP2009076536A (ja) * 2007-09-19 2009-04-09 Mitsubishi Electric Corp Ａｌ合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板
JP4611417B2 (ja) 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) * 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
US20110008640A1 (en) * 2008-03-31 2011-01-13 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Display device, process for producing the display device, and sputtering target
JP2009282504A (ja) * 2008-03-31 2009-12-03 Kobe Steel Ltd 表示デバイス
KR20100127290A (ko) * 2008-04-23 2010-12-03 가부시키가이샤 고베 세이코쇼 표시 장치용 Ａｌ 합금막, 표시 장치 및 스퍼터링 타깃
JP2009282514A (ja) * 2008-04-24 2009-12-03 Kobe Steel Ltd 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
JP5357515B2 (ja) * 2008-11-05 2013-12-04 株式会社神戸製鋼所 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
JP5368806B2 (ja) * 2009-01-13 2013-12-18 株式会社神戸製鋼所 表示装置用Ａｌ合金膜および表示装置
US20110198602A1 (en) * 2008-11-05 2011-08-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy film for display device, display device, and sputtering target
JP2010134458A (ja) * 2008-11-05 2010-06-17 Kobe Steel Ltd 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
KR101156428B1 (ko) * 2009-06-01 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 소자
KR101600887B1 (ko) * 2009-07-06 2016-03-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
CN103972246B (zh) * 2009-07-27 2017-05-31 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
JP5235011B2 (ja) * 2009-11-16 2013-07-10 株式会社神戸製鋼所 有機ｅｌディスプレイ用の反射アノード電極
JP5179604B2 (ja) * 2010-02-16 2013-04-10 株式会社神戸製鋼所 表示装置用Ａｌ合金膜
KR101641620B1 (ko) * 2010-08-11 2016-07-22 삼성디스플레이 주식회사 박막 트랜지스터 및 그를 포함하는 박막 트랜지스터 표시판
JP2012069808A (ja) * 2010-09-24 2012-04-05 Casio Comput Co Ltd 薄膜トランジスタ基板の製造方法
KR101824537B1 (ko) * 2010-10-01 2018-03-15 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 디스플레이
JP2013084907A (ja) 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
US20130115779A1 (en) * 2011-11-09 2013-05-09 Intermolecular, Inc. Conical Sleeves For Reactors
KR20160105490A (ko) * 2014-02-07 2016-09-06 가부시키가이샤 고베 세이코쇼 플랫 패널 디스플레이용 배선막
CN106771726B (zh) * 2016-12-02 2019-10-22 深圳市华星光电技术有限公司 测试组件及其监控显示面板电性特性的方法、显示面板
JP7127685B2 (ja) * 2018-08-08 2022-08-30 株式会社ニコン トランジスタの製造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP2813234B2 (ja) 1990-05-16 1998-10-22 日本電信電話株式会社 配線構造
JP3195837B2 (ja) 1992-12-15 2001-08-06 松下電器産業株式会社 液晶表示装置およびその製造方法
JP2733006B2 (ja) 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
EP1553205B1 (en) * 1995-10-12 2017-01-25 Kabushiki Kaisha Toshiba Sputter target for forming thin film interconnector and thin film interconnector line
KR100323297B1 (ko) 1998-05-15 2002-02-04 구마모토 마사히로 투명도전막
JP2001350159A (ja) 2000-06-06 2001-12-21 Hitachi Ltd 液晶表示装置及びその製造方法
US6459464B1 (en) * 2000-08-14 2002-10-01 Kabushiki Kaisha Advanced Display Liquid crystal display device with reduced weighting trace defects
JP2002299630A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ＭｏＷ／ＡｌまたはＡｌ合金／ＭｏＷの積層薄膜を用いた薄膜トランジスタおよび薄膜トランジスタアレイとその製造方法
JP2002368202A (ja) * 2001-06-07 2002-12-20 Canon Inc 半導体装置、撮像装置、放射線検出装置及び放射線検出システム
JP4783525B2 (ja) * 2001-08-31 2011-09-28 株式会社アルバック 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
JP3940385B2 (ja) 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法

Also Published As

Publication number Publication date
JP2007157917A (ja) 2007-06-21
KR20080063869A (ko) 2008-07-07
US7952123B2 (en) 2011-05-31
KR100983196B1 (ko) 2010-09-20
US20090134393A1 (en) 2009-05-28
JP4117002B2 (ja) 2008-07-09
CN101253447A (zh) 2008-08-27
CN101253447B (zh) 2012-02-29
WO2007063991A1 (ja) 2007-06-07

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