TW200731373A - Semiconductor chip and cut-out method therefor - Google Patents

Semiconductor chip and cut-out method therefor

Info

Publication number
TW200731373A
TW200731373A TW095136785A TW95136785A TW200731373A TW 200731373 A TW200731373 A TW 200731373A TW 095136785 A TW095136785 A TW 095136785A TW 95136785 A TW95136785 A TW 95136785A TW 200731373 A TW200731373 A TW 200731373A
Authority
TW
Taiwan
Prior art keywords
semiconductor chip
cut
out method
method therefor
structure material
Prior art date
Application number
TW095136785A
Other languages
English (en)
Chinese (zh)
Inventor
Tomofumi Kiyomoto
Katsuyuki Ono
Muneo Harada
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200731373A publication Critical patent/TW200731373A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW095136785A 2005-10-03 2006-10-03 Semiconductor chip and cut-out method therefor TW200731373A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005290229A JP2007103595A (ja) 2005-10-03 2005-10-03 半導体チップ切出し方法および半導体チップ

Publications (1)

Publication Number Publication Date
TW200731373A true TW200731373A (en) 2007-08-16

Family

ID=37906231

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136785A TW200731373A (en) 2005-10-03 2006-10-03 Semiconductor chip and cut-out method therefor

Country Status (3)

Country Link
JP (1) JP2007103595A (enrdf_load_stackoverflow)
TW (1) TW200731373A (enrdf_load_stackoverflow)
WO (1) WO2007040190A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI815900B (zh) * 2018-06-06 2023-09-21 日商迪思科股份有限公司 晶圓的加工方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5176387B2 (ja) * 2007-05-18 2013-04-03 大日本印刷株式会社 メンブレン構造体の製造方法
JP2009113165A (ja) * 2007-11-07 2009-05-28 Tokyo Electron Ltd 微小構造体デバイスの製造方法
US9165833B2 (en) * 2010-01-18 2015-10-20 Semiconductor Components Industries, Llc Method of forming a semiconductor die
DE102023111777A1 (de) * 2023-05-05 2024-11-07 Technische Universität Chemnitz, Körperschaft des öffentlichen Rechts Verfahren zur Herstellung eines mikromechanischen Ultraschallwandlers und zugehöriger Ultraschallwandler

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04159712A (ja) * 1990-10-23 1992-06-02 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04297056A (ja) * 1991-03-08 1992-10-21 Sony Corp 半導体装置の製造方法
JPH06112236A (ja) * 1992-09-25 1994-04-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH06151588A (ja) * 1992-11-09 1994-05-31 Japan Energy Corp 半導体装置の製造方法
JPH097975A (ja) * 1995-06-22 1997-01-10 Hitachi Ltd 半導体装置およびその製造方法
JPH1154478A (ja) * 1997-06-05 1999-02-26 Tokai Rika Co Ltd シリコン基板における陽極化成方法及び表面型の加速度センサの製造方法
JP2000340527A (ja) * 1999-05-28 2000-12-08 Horiba Ltd 半導体素子の分離方法
JP4437337B2 (ja) * 1999-06-08 2010-03-24 住友精密工業株式会社 半導体デバイスの製造方法
JP2001076599A (ja) * 1999-09-02 2001-03-23 Tokai Rika Co Ltd マイクロリードスイッチ、マイクロリードスイッチ体及びマイクロリードスイッチ部材の製造方法
JP2002033765A (ja) * 2000-07-17 2002-01-31 Matsushita Electric Ind Co Ltd リンクトリスト方式バッファメモリ制御装置およびその制御方法
JP2002093752A (ja) * 2000-09-14 2002-03-29 Tokyo Electron Ltd 半導体素子分離方法及び半導体素子分離装置
US20050095814A1 (en) * 2003-11-05 2005-05-05 Xu Zhu Ultrathin form factor MEMS microphones and microspeakers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI815900B (zh) * 2018-06-06 2023-09-21 日商迪思科股份有限公司 晶圓的加工方法

Also Published As

Publication number Publication date
WO2007040190A1 (ja) 2007-04-12
JP2007103595A (ja) 2007-04-19

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