TW200723514A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW200723514A
TW200723514A TW095117059A TW95117059A TW200723514A TW 200723514 A TW200723514 A TW 200723514A TW 095117059 A TW095117059 A TW 095117059A TW 95117059 A TW95117059 A TW 95117059A TW 200723514 A TW200723514 A TW 200723514A
Authority
TW
Taiwan
Prior art keywords
transistor
gate
semiconductor device
booster
circuit
Prior art date
Application number
TW095117059A
Other languages
English (en)
Inventor
Ken Mimuro
Mikiya Uchida
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200723514A publication Critical patent/TW200723514A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
TW095117059A 2005-08-16 2006-05-15 Semiconductor device TW200723514A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005235972A JP4533821B2 (ja) 2005-08-16 2005-08-16 Ｍｏｓ型固体撮像装置

Publications (1)

Publication Number Publication Date
TW200723514A true TW200723514A (en) 2007-06-16

Family

ID=37478680

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095117059A TW200723514A (en) 2005-08-16 2006-05-15 Semiconductor device

Country Status (4)

Country Link
US (1) US7675327B2 (zh)
EP (1) EP1755159A3 (zh)
JP (1) JP4533821B2 (zh)
TW (1) TW200723514A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394118B (zh) * 2007-08-20 2013-04-21 Au Optronics Corp 降低電子迴路中自舉點電壓之方法及利用前述方法之裝置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6242211B2 (ja) * 2013-12-26 2017-12-06 キヤノン株式会社 撮像装置および撮像システム

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
JPS532308B2 (zh) * 1972-09-25 1978-01-26
US3986044A (en) 1975-09-12 1976-10-12 Motorola, Inc. Clocked IGFET voltage level sustaining circuit
JPS53125753A (en) * 1977-04-08 1978-11-02 Nec Corp Driving circuit
JPS5774886A (en) 1980-10-29 1982-05-11 Toshiba Corp Semiconductor integrated circuit device
JPS63139426A (ja) * 1986-12-02 1988-06-11 Mitsubishi Electric Corp 半導体ブ−トストラツプ回路
JP3330746B2 (ja) * 1994-09-09 2002-09-30 新日本製鐵株式会社 ブートストラップ回路
JPH08203270A (ja) * 1995-01-27 1996-08-09 Matsushita Electron Corp 半導体集積回路
KR100277911B1 (ko) 1996-06-10 2001-02-01 김영환 반도체소자 제조방법
JP3422921B2 (ja) 1997-12-25 2003-07-07 シャープ株式会社 半導体集積回路
FR2807847B1 (fr) * 2000-04-12 2002-11-22 St Microelectronics Sa Regulateur lineaire a faible surtension en regime transitoire
JP2002190576A (ja) * 2000-12-19 2002-07-05 Hitachi Ltd 半導体装置およびその製造方法
KR100432652B1 (ko) 2002-08-01 2004-05-22 삼성에스디아이 주식회사 레벨 시프터 및 평판 표시 장치
CN100431160C (zh) 2002-09-12 2008-11-05 松下电器产业株式会社 固态成像装置及其制造方法
AU2003292565A1 (en) 2002-12-25 2004-07-22 Semiconductor Energy Laboratory Co., Ltd. Digital circuit having correction circuit and electronic instrument having same
JP4387684B2 (ja) 2003-04-04 2009-12-16 パナソニック株式会社 固体撮像装置、その駆動方法及びカメラ
JP2005268621A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 半導体集積回路装置
JP2005339658A (ja) * 2004-05-26 2005-12-08 Toshiba Corp 昇圧回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394118B (zh) * 2007-08-20 2013-04-21 Au Optronics Corp 降低電子迴路中自舉點電壓之方法及利用前述方法之裝置

Also Published As

Publication number Publication date
JP4533821B2 (ja) 2010-09-01
EP1755159A3 (en) 2008-02-20
US7675327B2 (en) 2010-03-09
US20070040583A1 (en) 2007-02-22
JP2007053168A (ja) 2007-03-01
EP1755159A2 (en) 2007-02-21

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